US20060197180A1 - Three-dimensional memory structure and manufacturing method thereof - Google Patents
Three-dimensional memory structure and manufacturing method thereof Download PDFInfo
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- US20060197180A1 US20060197180A1 US11/307,221 US30722106A US2006197180A1 US 20060197180 A1 US20060197180 A1 US 20060197180A1 US 30722106 A US30722106 A US 30722106A US 2006197180 A1 US2006197180 A1 US 2006197180A1
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- 239000004020 conductor Substances 0.000 claims 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 108
- 229920005591 polysilicon Polymers 0.000 abstract description 108
- 239000000758 substrate Substances 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 212
- 238000005530 etching Methods 0.000 description 15
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
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- 238000012545 processing Methods 0.000 description 5
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- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
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- 238000004528 spin coating Methods 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 206010034962 Photopsia Diseases 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a three-dimensional memory structure and manufacturing method thereof. More particularly, the present invention relates to a vertically stacked three-dimensional memory array and manufacturing method thereof.
- each integrated circuit contains an increasing number of electronic devices.
- Memory is a common semiconductor device most often used inside a personal computer and some electronic equipment.
- each memory includes an array of memory cells on a single layer over a semiconductor substrate. The cross over area between each column and row constitutes a specified memory cell address.
- memory cells within the same column or the same row have a common conductive wire connection.
- a vertical stacked non-volatile memory structure is disclosed in U.S. Pat. No. 6,351,406. The method includes forming a three-dimensional multi-layered array memory structure over a substrate with each array layer having a plurality of memory cells such that the memory cells in the same column or row are connected to a common conductive wire.
- FIG. 1 is a front view of a conventional three-dimensional multi-layered memory array structure.
- a first patterned conductive layer 1 lies in an east/west direction and a second patterned conductive layer 3 lies in a south/north direction above the first patterned conductive layer 1
- a cylindrical memory cell 5 is formed in the area of intersection between the vertical projection of the second patterned conductive layer 3 and the first patterned conductive layer 1 .
- a third patterned conductive layer 7 lies in an east/west direction
- a cylindrical memory cell 9 is formed in the area of intersection between the vertical projection of the third patterned conductive layer 7 and the second patterned conductive layer 3 .
- even-numbered patterned conductive layers lie in a south/north direction and odd-numbered patterned conductive layers lie in an east/west direction.
- U.S. Pat. No. 6,351,406 has proposed a method of manufacturing a vertical stacked non-volatile memory for increasing overall level of device integration, the method requires N+1 photolithographic processes to form the N memory cell array layers over a substrate. Along with the photolithographic steps needed to producing interconnecting vias, the total number of processing steps is exceptionally high. In other words, the stacked three-dimensional memory is rather difficult and costly to manufacture.
- one object of the present invention is to provide a three-dimensional memory structure and manufacturing method thereof that only involves simple processing steps.
- a second object of this invention is to provide a three-dimensional memory structure and manufacturing method thereof capable of increasing overall level of integration of the memory devices.
- the invention provides a three-dimensional memory structure.
- the memory structure comprises a multiple of stacked circuits.
- the first stacked circuit includes two conductive layers, an n-type polysilicon layer, a p-type polysilicon layer and an anti-fuse.
- the n-type polysilicon layer in the first stacked circuit is located between the two conductive layers and the p-type polysilicon layer is located between the n-type polysilicon layer and one of the two conductive layers.
- the anti-fuse is located between the n-type polysilicon layer and the other one of the two conductive layers.
- the first stacked circuit includes a conductive layer/p-type polysilicon layer/n-type polysilicon layer/anti-fuse/conductive layer (C/P/N/A/C) setup and a conductive layer/anti-fuse/n-type polysilicon layer/p-type polysilicon layer/conductive layer (C/A/N/P/C) setup.
- the second stacked circuit of the three-dimensional memory structure includes two conductive layers, an n-type polysilicon layer, a p-type polysilicon layer and an anti-fuse.
- the p-type polysilicon layer of the second stacked circuit is located between the two conductive layers and the n-type polysilicon layer is located between the p-type polysilicon layer and one of the conductive layers.
- the anti-fuse is located between the p-type polysilicon and the other one of the two conductive layers.
- the second stacked circuit includes a conductive layer/anti-fuse/p-type polysilicon layer/n-type polysilicon layer/conductive layer (C/A/P/N/C) setup and a conductive layer/n-type polysilicon layer/p-type polysilicon layer/anti-fuse/conductive layer (C/N/P/A/C) setup.
- the second stacked circuit and the first stacked circuit cross over each other in the vertical dimension. Therefore, a total of four different methods of combining the first stacked circuit and the second stacked circuit are possible.
- one of the four aforementioned configurations can be used to form more stacked circuits over the substrate.
- This invention also provides a method of fabricating a three-dimensional memory structure.
- an n-type polysilicon layer/conductive layer/anti-fuse/n-type polysilicon layer (N/C/A/N) stack structure is formed over a substrate.
- the N/C/A/N stack structure is patterned to form an array of linear first stacked lines.
- a dielectric layer is formed in the space between the first stacked lines above the substrate. The dielectric layer is planarized to expose the topmost n-type polysilicon layer of the first stacked lines.
- a p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon layer (P/C/A/P) stacked structure is formed over the topmost n-type polysilicon layer of the first stacked line.
- the P/C/A/P stacked structure and the topmost n-type polysilicon layer of the first stacked line is patterned to form an array of linear second stacked lines that crosses over the first stacked lines vertically.
- Another dielectric layer is formed in the space between the second stacked lines above the anti-fuse of the first stacked lines.
- the dielectric layer is again planarized to expose the topmost p-type polysilicon layer of the second stacked lines.
- the overlapping areas between the first stacked lines and the second stacked lines forms an array of cylindrical memory cells.
- the aforementioned processing steps are repeated to form more stacked lines and hence build up a three-dimensional memory structure.
- a three-dimensional multi-layered memory array structure is used in this invention.
- the odd-numbered memory cell array and the even-numbered memory cell array of the three-dimensional structure are alternately stacked over each other and oriented in a direction perpendicular to each other above the substrate.
- substrate area required to accommodate the memory device is reduced and overall level of integration of the memory chip is increased.
- the anti-fuse is used as an etching stop layer. Since the anti-fuse is fabricated from silicon oxide, the anti-fuse has a relatively high etching selectivity ratio relative to the polysilicon and the conductive layer. Therefore, the processing window is increased and the steps for fabricating the three-dimensional memory are simplified.
- the steps of forming via is to break through the anti-fuse after etching stop on the anti-fuse, so it can effectively etch stop on the conductive layer. Therefore, it can prevent via from forming p-n or n-p rectification junction due to the conductive layer being perforated, resulting in non-conducting.
- FIG. 1 is a front view of a conventional three-dimensional multi-layered memory array structure.
- FIGS. 2A and 2B are front views and side view of a three-dimensional memory structure according to one preferred embodiment of this invention.
- FIGS. 3A to 3 G are front views showing the progression of steps for forming the three-dimensional memory structure shown in FIGS. 2A and 2B .
- FIGS. 4A to 4 G are side views that correspond with the front views shown in FIGS. 3A to 3 G.
- FIGS. 2A and 2B are front views and side view of a three-dimensional memory structure according to one preferred embodiment of this invention.
- the three-dimensional structure comprises of a stack of circuit layers.
- the first stack circuit 21 includes two n-type polysilicon layers 23 and 25 , a conductive layer 27 and an anti-fuse 29 .
- the anti-fuse 29 is a silicon oxide layer and the conductive layer 27 is a tungsten silicide or a titanium silicide layer, for example.
- the conductive layer 27 of the first stack circuit 21 is located between the two n-type polysilicon layers 23 and 25 .
- the anti-fuse 29 is located between the n-type polysilicon layer 25 and the conductive layer 27 .
- the first stack circuit 21 has an n-type polysilicon/conductive layer/anti-fuse/n-type polysilicon (N/C/A/N) setup.
- the second stack circuit 31 of the three-dimensional memory structure includes two p-type polysilicon layers 33 and 35 , another conductive layer 37 , another anti-fuse 39 and the n-type polysilicon layer 25 of the first stack circuit.
- the conductive layer 37 of the second stack circuit 31 is located between the p-type polysilicon layer 33 and 35 .
- the anti-fuse 39 is located between the p-type polysilicon layer 35 and the conductive layer 37 .
- the second stack circuit 31 has a p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon (P/C/A/P) setup.
- the second stack circuit 31 crosses over the first stack circuit 21 vertically.
- memory capacity of the three-dimensional structure depends on the number of stack circuits over the substrate. Hence, stacking more circuits on top of the substrate will increase the overall memory capacity.
- the first stack circuit 21 can have an n-type polysilicon/anti-fuse/conductive layer/n-type polysilicon (N/A/C/N) setup and the second stack circuit 31 can have a p-type polysilicon/anti-fuse/conductive layer/p-type polysilicon setup.
- N/A/C/N n-type polysilicon/anti-fuse/conductive layer/n-type polysilicon
- the second stack circuit 31 can have a p-type polysilicon/anti-fuse/conductive layer/p-type polysilicon setup.
- FIGS. 3A to 3 G are front views showing the progression of steps for forming the three-dimensional memory structure shown in FIGS. 2A and 2B .
- FIGS. 4A to 4 G are side views that correspond with the front views shown in FIGS. 3A to 3 G.
- a substrate 200 such as a silicon substrate is provided.
- an n-type polysilicon layer 202 , a conductive layer 204 , an anti-fuse 206 and another n-type polysilicon layer 208 are sequentially formed over the substrate 200 .
- the n-type polysilicon layer 202 and 208 are formed, for example, by conducting an in-situ doping using phosphene as a gaseous source.
- the conductive layer 204 is a tungsten silicide layer or a titanium silicide layer, for example.
- the conductive layer 204 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the anti-fuse 206 is fabricated using a material having an etching selectivity ratio higher than the n-type polysilicon layers 202 , 208 and the conductive layer 204 including, for example, silicon oxide.
- the anti-fuse 206 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the n-type polysilicon layer 202 , the conductive layer 204 , the anti-fuse 206 and the n-type polysilicon layer 208 are patterned to form an array of linear first stack circuits 210 each having an n-type polysilicon/conductive layer/anti-fuse/n-type polysilicon (N/C/A/N) composite layer setup. Thereafter, a dielectric layer 10 is formed in the space between the first stack circuits 210 .
- the dielectric layer 10 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer.
- the dielectric layer 10 is formed, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process.
- a portion of the dielectric layer 10 is removed to expose the topmost n-type polysilicon layer 208 .
- the dielectric layer 10 above the n-type polysilicon layer 208 is removed, for example, by chemical-mechanical polishing or conducting an etching back process.
- a p-type polysilicon layer 212 , a conductive layer 214 , an anti-fuse 216 and another p-type polysilicon layer 218 are sequentially formed over the n-type polysilicon layer 208 .
- the p-type polysilicon layer 212 and 218 are formed, for example, by conducting an in-situ doping using boron hydride as a gaseous source.
- the conductive layer 214 is a tungsten silicide layer or a titanium silicide layer, for example.
- the conductive layer 214 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the anti-fuse 216 is fabricated using a material having an etching selectivity ratio higher than the p-type polysilicon layers 212 , 218 and the conductive layer 214 including, for example, silicon oxide.
- the anti-fuse 216 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the p-type polysilicon layer 212 , the conductive layer 214 , the anti-fuse 216 and the p-type polysilicon layer 218 are patterned to form an array of linear second stack circuits 210 each having an n-type polysilicon/p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon (N/P/C/A/P) composite layer setup.
- the second stack circuits 220 are oriented in a direction perpendicular to and vertically above the first stack circuits 210 .
- the anti-fuse serves as an etching stop layer.
- a dielectric layer 12 is formed in the space between the second stack circuits 220 .
- the dielectric layer 12 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer.
- the dielectric layer 12 is formed, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process.
- a portion of the dielectric layer 12 is removed to expose the topmost p-type polysilicon layer 218 .
- the dielectric layer 12 above the p-type polysilicon layer 218 is removed, for example, by chemical-mechanical polishing or conducting an etching back process.
- the dielectric layer 12 and the anti-fuse 206 are patterned to form an opening 14 above the conductive layer 204 .
- n+ polysilicon material is deposited into the opening 14 to form a plug 16 .
- an n-type polysilicon layer 222 , a conductive layer 224 , an anti-fuse 226 and another n-type polysilicon layer 228 are sequentially formed over the p-type polysilicon layer 218 .
- the n+ polysilicon plug 16 connects the conductive layer 204 and the n-type polysilicon layer 222 electrically.
- the n-type polysilicon layers 222 and 228 are formed, for example, by conducting an in-situ doping using phosphene as a gaseous source.
- the conductive layer 224 is a tungsten silicide layer or a titanium silicide layer, for example.
- the conductive layer 224 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the anti-fuse 226 is fabricated using a material having an etching selectivity ratio higher than the n-type polysilicon layers 222 , 228 and the conductive layer 224 including, for example, silicon oxide.
- the anti-fuse 226 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the n-type polysilicon layer 222 , the conductive layer 224 , the anti-fuse 226 , the n-type polysilicon layer 228 and the p-type polysilicon layer 218 are patterned to form an array of linear third stack circuits 230 each having a p-type polysilicon/n-type polysilicon/conductive layer/anti-fuse/n-type polysilicon (P/N/C/A/N) composite layer setup.
- the third stack circuits 230 are oriented in the same direction as the first stack circuits 210 .
- a dielectric layer 18 is formed in the space between the first stack circuits 210 , for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process.
- the dielectric layer 18 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer.
- a portion of the dielectric layer 18 is removed to expose the topmost n-type polysilicon layer 228 .
- the dielectric layer 18 above the n-type polysilicon layer 228 is removed, for example, by chemical-mechanical polishing or conducting an etching back process.
- a p-type polysilicon layer 232 , a conductive layer 234 , an anti-fuse 236 and another p-type polysilicon layer 238 are sequentially formed over the n-type polysilicon layer 228 .
- the p-type polysilicon layers 232 and 238 are formed, for example, by conducting an in-situ doping using boron hydride as a gaseous source.
- the conductive layer 234 is a tungsten silicide layer or a titanium silicide layer, for example.
- the conductive layer 234 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the anti-fuse 236 is fabricated using a material having an etching selectivity ratio higher than the p-type polysilicon layers 232 , 238 and the conductive layer 234 including, for example, silicon oxide.
- the anti-fuse 236 is formed, for example, by conducting a low-pressure chemical vapor deposition.
- the p-type polysilicon layer 232 , the conductive layer 234 , the anti-fuse 236 , the p-type polysilicon layer 238 and the n-type polysilicon layer 228 are patterned to form an array of linear fourth stack circuits 240 each having a n-type polysilicon/p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon (N/P/C/A/P) composite layer setup.
- the fourth stack circuits 240 are oriented in a direction identical to the second stack circuits 220 . Thereafter, a dielectric layer 20 is formed in the space between the fourth stack circuits 240 above the anti-fuse 226 .
- the dielectric layer 20 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer.
- the dielectric layer 20 is formed, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process.
- a portion of the dielectric layer 20 is removed to expose the topmost p-type polysilicon layer 238 .
- the dielectric layer 20 above the p-type polysilicon layer 238 is removed, for example, by chemical-mechanical polishing or conducting an etching back process.
- the dielectric layer 20 and the anti-fuse 226 are patterned to form an opening 22 above the conductive layer 224 .
- the dielectric layer 20 , the dielectric layer 18 and the anti-fuse 216 are patterned to form another opening 24 above the conductive layer 214 .
- n+ polysilicon material is deposited into the openings 22 and 24 to form plugs 26 and 28 . Thereafter, an n-type polysilicon layer 242 , a conductive layer 244 , an anti-fuse 246 and another n-type polysilicon layer 248 are sequentially formed over the p-type polysilicon layer 238 .
- the n+ polysilicon plug 26 connects the conductive layer 224 and the n-type polysilicon layer 242 electrically.
- the n+ polysilicon plug 28 connects the conductive layer 214 and the n-type polysilicon layer 242 electrically.
- the aforementioned steps may be repeated to stack alternately crossed circuits above the substrate so that a truly three-dimensional memory structure is formed.
- a three-dimensional multi-layered memory array structure is produced.
- the odd-numbered memory cell array and the even-numbered memory cell array of the three-dimensional structure are alternately stacked over each other and oriented in a direction perpendicular to each other above the substrate.
- substrate area required to accommodate the memory device is reduced and overall level of integration of the memory chip is increased.
- the anti-fuse is used as an etching stop layer. Since the anti-fuse is fabricated from silicon oxide, the anti-fuse has a relatively high etching selectivity ratio relative to the polysilicon and the conductive layer. Therefore, the processing window is increased and the steps for fabricating the three-dimensional memory are simplified.
- the steps of forming via is to break through the anti-fuse after etching stop on the anti-fuse, so it can effectively etch stop on the conductive layer Therefore, it can prevent via from forming p-n or n-p rectification junction due to the conductive layer being perforated, resulting in non-conducting.
Abstract
A three-dimensional memory structure and manufacturing method thereof is provided. A first stack layer is formed over a substrate. The first stack layer includes, from the substrate upwards, an n-type polysilicon layer, a conductive layer, an anti-fuse and another n-type polysilicon layer. The first stack layer is patterned to form a first stack circuit. Thereafter, a second stack layer is formed over the first stack circuit. The second stack layer includes, from the first stack circuit upwards, a p-type polysilicon layer, a conductive layer, an anti-fuse and another p-type polysilicon. The second stack layer is patterned to form a second stack circuit that crosses over the first stack circuit perpendicularly. The aforementioned steps are repeated to form more stack circuits above the substrate and hence produce a three-dimensional structure.
Description
- This application is a continuation of a prior application Ser. No. 10/906,779, filed Mar. 7, 2005, which now is allowed. The prior application Ser. No. 10/906,779 is a continuation application of a prior application Ser. No. 10/604,042, filed Jun. 24, 2003, which now is abandoned. All disclosures are incorporated herewith by reference.
- 1. Field of Invention
- The present invention relates to a three-dimensional memory structure and manufacturing method thereof. More particularly, the present invention relates to a vertically stacked three-dimensional memory array and manufacturing method thereof.
- 2. Description of Related Art
- Due to the rapid development of integrated circuit technologies, each integrated circuit contains an increasing number of electronic devices. Memory is a common semiconductor device most often used inside a personal computer and some electronic equipment. Earlier, each memory includes an array of memory cells on a single layer over a semiconductor substrate. The cross over area between each column and row constitutes a specified memory cell address. In general, memory cells within the same column or the same row have a common conductive wire connection. With this design, the only way to increase the level of integration is to reduce the size of each memory cell. A vertical stacked non-volatile memory structure is disclosed in U.S. Pat. No. 6,351,406. The method includes forming a three-dimensional multi-layered array memory structure over a substrate with each array layer having a plurality of memory cells such that the memory cells in the same column or row are connected to a common conductive wire.
-
FIG. 1 is a front view of a conventional three-dimensional multi-layered memory array structure. As shown inFIG. 1 , if a first patternedconductive layer 1 lies in an east/west direction and a second patterned conductive layer 3 lies in a south/north direction above the first patternedconductive layer 1, a cylindrical memory cell 5 is formed in the area of intersection between the vertical projection of the second patterned conductive layer 3 and the first patternedconductive layer 1. Furthermore, if a third patternedconductive layer 7 lies in an east/west direction, acylindrical memory cell 9 is formed in the area of intersection between the vertical projection of the third patternedconductive layer 7 and the second patterned conductive layer 3. In other words, according to the aforementioned stacking method, even-numbered patterned conductive layers lie in a south/north direction and odd-numbered patterned conductive layers lie in an east/west direction. - Although U.S. Pat. No. 6,351,406 has proposed a method of manufacturing a vertical stacked non-volatile memory for increasing overall level of device integration, the method requires N+1 photolithographic processes to form the N memory cell array layers over a substrate. Along with the photolithographic steps needed to producing interconnecting vias, the total number of processing steps is exceptionally high. In other words, the stacked three-dimensional memory is rather difficult and costly to manufacture.
- Accordingly, one object of the present invention is to provide a three-dimensional memory structure and manufacturing method thereof that only involves simple processing steps.
- A second object of this invention is to provide a three-dimensional memory structure and manufacturing method thereof capable of increasing overall level of integration of the memory devices.
- To achieve these and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, the invention provides a three-dimensional memory structure. The memory structure comprises a multiple of stacked circuits. The first stacked circuit includes two conductive layers, an n-type polysilicon layer, a p-type polysilicon layer and an anti-fuse. The n-type polysilicon layer in the first stacked circuit is located between the two conductive layers and the p-type polysilicon layer is located between the n-type polysilicon layer and one of the two conductive layers. The anti-fuse is located between the n-type polysilicon layer and the other one of the two conductive layers. Hence, the first stacked circuit includes a conductive layer/p-type polysilicon layer/n-type polysilicon layer/anti-fuse/conductive layer (C/P/N/A/C) setup and a conductive layer/anti-fuse/n-type polysilicon layer/p-type polysilicon layer/conductive layer (C/A/N/P/C) setup.
- The second stacked circuit of the three-dimensional memory structure includes two conductive layers, an n-type polysilicon layer, a p-type polysilicon layer and an anti-fuse. The p-type polysilicon layer of the second stacked circuit is located between the two conductive layers and the n-type polysilicon layer is located between the p-type polysilicon layer and one of the conductive layers. The anti-fuse is located between the p-type polysilicon and the other one of the two conductive layers. Hence, the second stacked circuit includes a conductive layer/anti-fuse/p-type polysilicon layer/n-type polysilicon layer/conductive layer (C/A/P/N/C) setup and a conductive layer/n-type polysilicon layer/p-type polysilicon layer/anti-fuse/conductive layer (C/N/P/A/C) setup. The second stacked circuit and the first stacked circuit cross over each other in the vertical dimension. Therefore, a total of four different methods of combining the first stacked circuit and the second stacked circuit are possible. In addition, according to the memory capacity, one of the four aforementioned configurations can be used to form more stacked circuits over the substrate.
- This invention also provides a method of fabricating a three-dimensional memory structure. First, an n-type polysilicon layer/conductive layer/anti-fuse/n-type polysilicon layer (N/C/A/N) stack structure is formed over a substrate. The N/C/A/N stack structure is patterned to form an array of linear first stacked lines. Thereafter, a dielectric layer is formed in the space between the first stacked lines above the substrate. The dielectric layer is planarized to expose the topmost n-type polysilicon layer of the first stacked lines. A p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon layer (P/C/A/P) stacked structure is formed over the topmost n-type polysilicon layer of the first stacked line. Next, the P/C/A/P stacked structure and the topmost n-type polysilicon layer of the first stacked line is patterned to form an array of linear second stacked lines that crosses over the first stacked lines vertically. Another dielectric layer is formed in the space between the second stacked lines above the anti-fuse of the first stacked lines. The dielectric layer is again planarized to expose the topmost p-type polysilicon layer of the second stacked lines. The overlapping areas between the first stacked lines and the second stacked lines forms an array of cylindrical memory cells. The aforementioned processing steps are repeated to form more stacked lines and hence build up a three-dimensional memory structure.
- A three-dimensional multi-layered memory array structure is used in this invention. The odd-numbered memory cell array and the even-numbered memory cell array of the three-dimensional structure are alternately stacked over each other and oriented in a direction perpendicular to each other above the substrate. Hence, substrate area required to accommodate the memory device is reduced and overall level of integration of the memory chip is increased. Moreover, in the fabrication process, the anti-fuse is used as an etching stop layer. Since the anti-fuse is fabricated from silicon oxide, the anti-fuse has a relatively high etching selectivity ratio relative to the polysilicon and the conductive layer. Therefore, the processing window is increased and the steps for fabricating the three-dimensional memory are simplified. Furthermore, the steps of forming via is to break through the anti-fuse after etching stop on the anti-fuse, so it can effectively etch stop on the conductive layer. Therefore, it can prevent via from forming p-n or n-p rectification junction due to the conductive layer being perforated, resulting in non-conducting.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
-
FIG. 1 is a front view of a conventional three-dimensional multi-layered memory array structure. -
FIGS. 2A and 2B are front views and side view of a three-dimensional memory structure according to one preferred embodiment of this invention. -
FIGS. 3A to 3G are front views showing the progression of steps for forming the three-dimensional memory structure shown inFIGS. 2A and 2B . -
FIGS. 4A to 4G are side views that correspond with the front views shown inFIGS. 3A to 3G. - Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
-
FIGS. 2A and 2B are front views and side view of a three-dimensional memory structure according to one preferred embodiment of this invention. As shown inFIGS. 2A and 2B , the three-dimensional structure comprises of a stack of circuit layers. The first stack circuit 21 includes two n-type polysilicon layers 23 and 25, aconductive layer 27 and an anti-fuse 29. The anti-fuse 29 is a silicon oxide layer and theconductive layer 27 is a tungsten silicide or a titanium silicide layer, for example. Theconductive layer 27 of the first stack circuit 21 is located between the two n-type polysilicon layers 23 and 25. The anti-fuse 29 is located between the n-type polysilicon layer 25 and theconductive layer 27. Hence, the first stack circuit 21 has an n-type polysilicon/conductive layer/anti-fuse/n-type polysilicon (N/C/A/N) setup. Thesecond stack circuit 31 of the three-dimensional memory structure includes two p-type polysilicon layers 33 and 35, anotherconductive layer 37, another anti-fuse 39 and the n-type polysilicon layer 25 of the first stack circuit. Theconductive layer 37 of thesecond stack circuit 31 is located between the p-type polysilicon layer type polysilicon layer 35 and theconductive layer 37. Hence, thesecond stack circuit 31 has a p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon (P/C/A/P) setup. Thesecond stack circuit 31 crosses over the first stack circuit 21 vertically. In this invention, memory capacity of the three-dimensional structure depends on the number of stack circuits over the substrate. Hence, stacking more circuits on top of the substrate will increase the overall memory capacity. - In general, there are other types of setups for the various layers inside the aforementioned stack circuit. For example, the first stack circuit 21 can have an n-type polysilicon/anti-fuse/conductive layer/n-type polysilicon (N/A/C/N) setup and the
second stack circuit 31 can have a p-type polysilicon/anti-fuse/conductive layer/p-type polysilicon setup. In fact, there are four different setups for combining the first stack circuit 21 and thesecond stack circuit 31 together. -
FIGS. 3A to 3G are front views showing the progression of steps for forming the three-dimensional memory structure shown inFIGS. 2A and 2B .FIGS. 4A to 4G are side views that correspond with the front views shown inFIGS. 3A to 3G. As shown inFIGS. 3A and 4A , asubstrate 200 such as a silicon substrate is provided. Thereafter, an n-type polysilicon layer 202, aconductive layer 204, an anti-fuse 206 and another n-type polysilicon layer 208 are sequentially formed over thesubstrate 200. The n-type polysilicon layer conductive layer 204 is a tungsten silicide layer or a titanium silicide layer, for example. Theconductive layer 204 is formed, for example, by conducting a low-pressure chemical vapor deposition. The anti-fuse 206 is fabricated using a material having an etching selectivity ratio higher than the n-type polysilicon layers 202, 208 and theconductive layer 204 including, for example, silicon oxide. The anti-fuse 206 is formed, for example, by conducting a low-pressure chemical vapor deposition. - The n-
type polysilicon layer 202, theconductive layer 204, the anti-fuse 206 and the n-type polysilicon layer 208 are patterned to form an array of linearfirst stack circuits 210 each having an n-type polysilicon/conductive layer/anti-fuse/n-type polysilicon (N/C/A/N) composite layer setup. Thereafter, adielectric layer 10 is formed in the space between thefirst stack circuits 210. Thedielectric layer 10 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer. Thedielectric layer 10 is formed, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process. - A portion of the
dielectric layer 10 is removed to expose the topmost n-type polysilicon layer 208. Thedielectric layer 10 above the n-type polysilicon layer 208 is removed, for example, by chemical-mechanical polishing or conducting an etching back process. - As shown in
FIGS. 3B and 4B , a p-type polysilicon layer 212, aconductive layer 214, an anti-fuse 216 and another p-type polysilicon layer 218 are sequentially formed over the n-type polysilicon layer 208. The p-type polysilicon layer conductive layer 214 is a tungsten silicide layer or a titanium silicide layer, for example. Theconductive layer 214 is formed, for example, by conducting a low-pressure chemical vapor deposition. The anti-fuse 216 is fabricated using a material having an etching selectivity ratio higher than the p-type polysilicon layers 212, 218 and theconductive layer 214 including, for example, silicon oxide. The anti-fuse 216 is formed, for example, by conducting a low-pressure chemical vapor deposition. - The p-
type polysilicon layer 212, theconductive layer 214, the anti-fuse 216 and the p-type polysilicon layer 218 are patterned to form an array of linearsecond stack circuits 210 each having an n-type polysilicon/p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon (N/P/C/A/P) composite layer setup. Thesecond stack circuits 220 are oriented in a direction perpendicular to and vertically above thefirst stack circuits 210. In patterning thesecond stack circuits 220, the anti-fuse serves as an etching stop layer. Thereafter, adielectric layer 12 is formed in the space between thesecond stack circuits 220. Thedielectric layer 12 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer. Thedielectric layer 12 is formed, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process. - A portion of the
dielectric layer 12 is removed to expose the topmost p-type polysilicon layer 218. Thedielectric layer 12 above the p-type polysilicon layer 218 is removed, for example, by chemical-mechanical polishing or conducting an etching back process. - As shown in
FIGS. 3C and 4C , thedielectric layer 12 and the anti-fuse 206 are patterned to form anopening 14 above theconductive layer 204. - As shown in
FIGS. 3D and 4D , n+ polysilicon material is deposited into theopening 14 to form aplug 16. Thereafter, an n-type polysilicon layer 222, aconductive layer 224, an anti-fuse 226 and another n-type polysilicon layer 228 are sequentially formed over the p-type polysilicon layer 218. Then+ polysilicon plug 16 connects theconductive layer 204 and the n-type polysilicon layer 222 electrically. The n-type polysilicon layers 222 and 228 are formed, for example, by conducting an in-situ doping using phosphene as a gaseous source. Theconductive layer 224 is a tungsten silicide layer or a titanium silicide layer, for example. Theconductive layer 224 is formed, for example, by conducting a low-pressure chemical vapor deposition. The anti-fuse 226 is fabricated using a material having an etching selectivity ratio higher than the n-type polysilicon layers 222, 228 and theconductive layer 224 including, for example, silicon oxide. The anti-fuse 226 is formed, for example, by conducting a low-pressure chemical vapor deposition. - The n-
type polysilicon layer 222, theconductive layer 224, the anti-fuse 226, the n-type polysilicon layer 228 and the p-type polysilicon layer 218 are patterned to form an array of linearthird stack circuits 230 each having a p-type polysilicon/n-type polysilicon/conductive layer/anti-fuse/n-type polysilicon (P/N/C/A/N) composite layer setup. Thethird stack circuits 230 are oriented in the same direction as thefirst stack circuits 210. Thereafter, adielectric layer 18 is formed in the space between thefirst stack circuits 210, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process. Thedielectric layer 18 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer. - A portion of the
dielectric layer 18 is removed to expose the topmost n-type polysilicon layer 228. Thedielectric layer 18 above the n-type polysilicon layer 228 is removed, for example, by chemical-mechanical polishing or conducting an etching back process. - As shown in
FIGS. 3E and 4E , a p-type polysilicon layer 232, aconductive layer 234, an anti-fuse 236 and another p-type polysilicon layer 238 are sequentially formed over the n-type polysilicon layer 228. The p-type polysilicon layers 232 and 238 are formed, for example, by conducting an in-situ doping using boron hydride as a gaseous source. Theconductive layer 234 is a tungsten silicide layer or a titanium silicide layer, for example. Theconductive layer 234 is formed, for example, by conducting a low-pressure chemical vapor deposition. The anti-fuse 236 is fabricated using a material having an etching selectivity ratio higher than the p-type polysilicon layers 232, 238 and theconductive layer 234 including, for example, silicon oxide. The anti-fuse 236 is formed, for example, by conducting a low-pressure chemical vapor deposition. - The p-
type polysilicon layer 232, theconductive layer 234, the anti-fuse 236, the p-type polysilicon layer 238 and the n-type polysilicon layer 228 are patterned to form an array of linearfourth stack circuits 240 each having a n-type polysilicon/p-type polysilicon/conductive layer/anti-fuse/p-type polysilicon (N/P/C/A/P) composite layer setup. Thefourth stack circuits 240 are oriented in a direction identical to thesecond stack circuits 220. Thereafter, adielectric layer 20 is formed in the space between thefourth stack circuits 240 above the anti-fuse 226. Thedielectric layer 20 is, for example, a silicon oxide layer, a silicon nitride layer or a spin-coated glass layer. Thedielectric layer 20 is formed, for example, by performing a high-density plasma chemical vapor deposition or a spin-coating process. - A portion of the
dielectric layer 20 is removed to expose the topmost p-type polysilicon layer 238. Thedielectric layer 20 above the p-type polysilicon layer 238 is removed, for example, by chemical-mechanical polishing or conducting an etching back process. - As shown in
FIGS. 3F and 4F , thedielectric layer 20 and the anti-fuse 226 are patterned to form anopening 22 above theconductive layer 224. In addition, thedielectric layer 20, thedielectric layer 18 and the anti-fuse 216 are patterned to form anotheropening 24 above theconductive layer 214. - As shown in
FIGS. 3G and 4G , n+ polysilicon material is deposited into theopenings plugs type polysilicon layer 242, aconductive layer 244, an anti-fuse 246 and another n-type polysilicon layer 248 are sequentially formed over the p-type polysilicon layer 238. Then+ polysilicon plug 26 connects theconductive layer 224 and the n-type polysilicon layer 242 electrically. Then+ polysilicon plug 28 connects theconductive layer 214 and the n-type polysilicon layer 242 electrically. - The aforementioned steps may be repeated to stack alternately crossed circuits above the substrate so that a truly three-dimensional memory structure is formed.
- In this invention, a three-dimensional multi-layered memory array structure is produced. The odd-numbered memory cell array and the even-numbered memory cell array of the three-dimensional structure are alternately stacked over each other and oriented in a direction perpendicular to each other above the substrate. Hence, substrate area required to accommodate the memory device is reduced and overall level of integration of the memory chip is increased. Moreover, in the fabrication process, the anti-fuse is used as an etching stop layer. Since the anti-fuse is fabricated from silicon oxide, the anti-fuse has a relatively high etching selectivity ratio relative to the polysilicon and the conductive layer. Therefore, the processing window is increased and the steps for fabricating the three-dimensional memory are simplified. Furthermore, the steps of forming via is to break through the anti-fuse after etching stop on the anti-fuse, so it can effectively etch stop on the conductive layer Therefore, it can prevent via from forming p-n or n-p rectification junction due to the conductive layer being perforated, resulting in non-conducting.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (14)
1. A memory structure, comprising:
a first conductor;
a second conductor cross over the first conductor;
a third conductor cross over the second conductor;
a first diode between the first conductor and the second conductor;
a second diode between the second conductor and the third conductor, wherein the directions of currents flowing through the first diode and second diode are opposite;
a first anti-fuse between the first conductor and the second conductor; and
a second anti-fuse between the second conductor and the third conductor.
2. The memory structure of claim 1 , wherein the first anti-fuse is between the first conductor and the first diode.
3. The memory structure of claim 1 , wherein the first anti-fuse is between the first diode and second conductor.
4. The memory structure of claim 1 , wherein the first anti-fuse is within the first diode.
5. The memory structure of claim 1 , wherein the first anti-fuse and the second anti-fuse comprise oxide.
6. A memory structure, comprising:
a first conductor;
a second conductor cross over the first conductor;
a third conductor cross over the second conductor;
a first layer of a first conductivity between the first conductor and the second conductor, a second layer of the first conductivity between the second conductor and the third conductor;
a third layer of a second conductivity between the first layer and the second conductor;
a fourth layer of the second conductivity between the second conductor and the second layer;
a first anti-fuse between the first conductor and the second conductor; and
a second anti-fuse between the second conductor and the third conductor.
7. The memory structure of claim 6 , wherein the first anti-fuse is between the first conductor and the first layer.
8. The memory structure of claim 6 , wherein the first anti-fuse is between the first layer and the second conductor.
9. The memory structure of claim 6 , wherein the first anti-fuse is between the first layer and the first layer of the second conductivity.
10. The memory structure of claim 9 , wherein the first conductivity comprises n type.
11. The memory structure of claim 9 , wherein the second conductivity comprises p type.
12. The memory structure of claim 9 , wherein the first conductivity comprises p type.
13. The memory structure of claim 9 , wherein the second conductivity comprises n type.
14. The memory structure of claim 9 , wherein the first anti-fuse and the second anti-fuse comprise oxide.
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Also Published As
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US20050133883A1 (en) | 2005-06-23 |
US20050006719A1 (en) | 2005-01-13 |
US7030459B2 (en) | 2006-04-18 |
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