US20060125064A1 - Semiconductor device and a method of manufacturing the same - Google Patents
Semiconductor device and a method of manufacturing the same Download PDFInfo
- Publication number
- US20060125064A1 US20060125064A1 US11/344,094 US34409406A US2006125064A1 US 20060125064 A1 US20060125064 A1 US 20060125064A1 US 34409406 A US34409406 A US 34409406A US 2006125064 A1 US2006125064 A1 US 2006125064A1
- Authority
- US
- United States
- Prior art keywords
- lead frame
- resin sealing
- leads
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 229920005989 resin Polymers 0.000 claims abstract description 141
- 239000011347 resin Substances 0.000 claims abstract description 141
- 238000007789 sealing Methods 0.000 claims abstract description 93
- 238000000465 moulding Methods 0.000 claims abstract description 53
- 238000005520 cutting process Methods 0.000 claims abstract description 35
- 239000000725 suspension Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 238000003825 pressing Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a semiconductor device and a method of manufacturing the same. Particularly, the present invention is concerned with a technique which is effectively applicable to a resin-sealed type semiconductor device.
- the QFN is of a structure wherein one ends of plural leads which are electrically connected to a semiconductor chip through bonding wires are exposed from a back surface (underside) of an outer peripheral portion of a sealing member to constitute terminals, and bonding wires are connected to the surfaces opposite to the exposed surfaces of the terminals, i.e., to terminal surfaces in the interior of the sealing member, to connect the terminals and the semiconductor chip electrically with each other.
- bonding wires are connected to the surfaces opposite to the exposed surfaces of the terminals, i.e., to terminal surfaces in the interior of the sealing member, to connect the terminals and the semiconductor chip electrically with each other.
- the semiconductor chip is mounted.
- This structure is advantageous in that the packaging area is smaller than that in a QFP (Quad Flat Package) wherein leads extend laterally from side faces of a package (a sealing member) to constitute terminals.
- QFP Quad Flat Package
- a semiconductor chip is mounted on a die pad portion of a lead frame, the semiconductor chip and leads are connected with each other using wires, then the lead frame is loaded into a molding die to seal the semiconductor chip with resin, and thereafter unnecessary portions of the lead frame exposed to the exterior of the resin sealing member are cut off with a dicer. At this time, metallic burrs occur in the cut faces of the leads, causing a lowering in the production yield of QFN. If the lead frame dicing speed with the dicer is set low, the occurrence of metallic burrs will be decreased, but the productivity of QFN is deteriorated because the lead frame dicing work consumes much time.
- lead patterns are formed by etching or pressing a metallic sheet, so if an attempt is made to attain a multi-pin structure of QFN and narrow the lead pitch, it is necessary to thin the metallic sheet used in fabricating the lead frame. As a result, leads and suspension leads become less rigid and a positional deviation of the semiconductor chip becomes easy to occur due to flowing of molten resin at the time of sealing the semiconductor chip with resin.
- a semiconductor device comprises a semiconductor chip, a plurality of leads arranged around the semiconductor chip, terminals connected to the plural leads respectively, a plurality of wires for connecting the semiconductor chip and the plural leads electrically with each other, and a resin sealing member for sealing the semiconductor chip, the plural leads and the plural wires, the terminals connected respectively to the plural leads being exposed to the exterior from a back surface of the sealing member,
- one ends of the plural leads are exposed to the exterior from side faces of the resin sealing member and are covered throughout the whole peripheries thereof with resin which constitutes the resin sealing member.
- a semiconductor device manufacturing method comprises the steps of:
- peripheral portions of the plural resin sealing members are each cut with the dicer to cover the whole peripheries of one end portions of the plural leads with the resin which constitute the resin sealing members, the plural leads being exposed to the cut faces of the resin sealing members.
- FIG. 1 is a perspective view showing an appearance of a semiconductor device according to a first embodiment of the present invention
- FIG. 2 is a plan view showing an appearance (back surface) of the semiconductor device of the first embodiment
- FIG. 3 is a plan view showing an internal structure (surface side) of the semiconductor device of the first embodiment
- FIG. 4 is a plan view showing an internal structure (back surface) of the semiconductor device of the first embodiment
- FIG. 5 is a side view of the semiconductor device of the first embodiment
- FIG. 6 is a sectional view of the semiconductor device taken along line A-A in FIG. 1 ;
- FIG. 7 is a sectional view of the semiconductor device taken along line B-B in FIG. 1 ;
- FIG. 8 is a plan view of a lead frame used in manufacturing the semiconductor device of the first embodiment
- FIG. 9 is a sectional view of a principal portion, showing how to fabricate the lead frame illustrated in FIG. 8 ;
- FIG. 10 is a sectional view of a principal portion, showing how to fabricate the lead frame illustrated in FIG. 8 ;
- FIG. 11 is a sectional view of a principal portion, showing how to fabricate the lead frame illustrated in FIG. 8 ;
- FIG. 12 is a plan view of a principal portion of the lead frame, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 13 is an explanatory diagram of a chip bonding step, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 14 is a plan view of a principal portion of the lead frame, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 15 is an explanatory diagram of a wire bonding step, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 16 is a sectional view of a principal portion of the lead frame and a molding die, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 17 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 18 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 19 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 20 is a plan view showing, with oblique lines, a portion where the upper die half of the molding die used in manufacturing the semiconductor device of the first embodiment comes into contact with the lead frame;
- FIG. 21 is a plan view showing schematically an example of gate positions in the molding die used in manufacturing the semiconductor device of the first embodiment, as well as an example of flowing directions of resin injected into cavities;
- FIG. 22 is a plan view showing schematically another example of gate positions in the molding die used in manufacturing the semiconductor device of the first embodiment, as well as another example of flowing directions of resin injected to cavities;
- FIG. 23 is an entire plan view (surface side) of the lead frame after molding, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 24 is an entire plan view (back surface) of the lead frame after molding, showing how to manufacture the semiconductor device of the first embodiment
- FIG. 25 is a plan view of a principal portion, showing cutting lines for cutting the lead frame after molding
- FIG. 26 is a sectional view showing cutting lines for cutting the lead frame after molding
- FIG. 27 is a partial enlarged sectional view of FIG. 26 ;
- FIG. 28 is a sectional view of a resin sealing member taken along a cutting line
- FIG. 29 is a sectional view of a principal portion, showing conventional cutting lines for cutting the lead frame after molding
- FIG. 30 is a sectional view of the resin sealing member taken along a conventional cutting line
- FIG. 31 is a sectional view of the resin sealing member taken along a cutting line
- FIG. 32 is a partial enlarged perspective view of the resin sealing member, showing a cut face of a suspension lead exposed to a corner portion;
- FIG. 33 is a sectional view of a principal portion, showing an example of a lead frame cutting method
- FIG. 34 is a sectional view of a principal portion, showing another example of a lead frame cutting method
- FIG. 35 is a plan view of a principal portion of a lead frame used in manufacturing a semiconductor device according to a second embodiment of the present invention.
- FIG. 36 is a sectional view of the lead frame taken along line Y-Y′ in FIG. 35 ;
- FIG. 37 is a sectional view of the lead frame taken along line Z-Z′ in FIG. 35 ;
- FIG. 38 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37 ;
- FIG. 39 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37 ;
- FIG. 40 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37 ;
- FIG. 41 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37 ;
- FIG. 42 is a sectional view of a principal portion of he lead frame and a molding die, showing how to manufacture the semiconductor device of the second embodiment
- FIG. 43 is a sectional view of a principal portion of a lead frame used in manufacturing the semiconductor device of the second embodiment
- FIG. 44 is a plan view (surface side) of a principal portion of a lead frame used in manufacturing a semiconductor device according to a third embodiment of the present invention.
- FIG. 45 is a plan view (back surface side) of a principal portion of the lead frame used in manufacturing the semiconductor device of the third embodiment
- FIG. 46 is a perspective view showing a die pad portion of the lead frame illustrated in FIGS. 44 and 45 ;
- FIG. 47 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 44 and 45 ;
- FIG. 48 is a sectional view of a principal portion of the lead frame and a molding die, showing how to manufacture the semiconductor device of the third embodiment
- FIG. 49 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the third embodiment
- FIG. 50 is a sectional view of a principal portion of a lead frame and a molding die, showing a problem involved in a molding step for a resin sealing member;
- FIG. 51 is a plan view showing an appearance (back surface side) of the semiconductor device of the third embodiment.
- FIG. 52 is a plan view (back surface side) of a principal portion of a lead frame employable in manufacturing the semiconductor device of the third embodiment
- FIG. 53 is a plan view (back surface side) of a principal portion of a lead frame employable in manufacturing the semiconductor device of the third embodiment
- FIG. 54 is an explanatory diagram showing how to fabricate a lead frame used in manufacturing a semiconductor device further embodying the present invention.
- FIG. 55 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIG. 54 ;
- FIG. 56 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIG. 54 ;
- FIG. 57 is a plan view of a principal portion of a lead frame used in manufacturing a semiconductor device further embodying the present invention.
- FIG. 1 is a perspective view showing an appearance of a QFN according to an embodiment of the present invention
- FIG. 2 is a plan view showing an appearance (back surface) of the QFN
- FIG. 3 is a plan view showing an internal structure (surface side) of the QFN
- FIG. 4 is a plan view showing an internal structure (back surface) of the QFN
- FIG. 5 is a side view of the QFN
- FIG. 6 is a sectional view taken along line A-A in FIG. 1
- FIG. 7 is a sectional view taken along line B-B in FIG. 1 .
- the QFN of this embodiment is a surface-mounted type package wherein one semiconductor chip 2 is sealed with a resin sealing member 3 .
- It external dimensions are, for example, 12 mm long, 12 mm wide, and 1.0 mm thick.
- a semiconductor chip 2 is mounted on an upper surface of a metallic die pad portion 4 and in this state is disposed at a center of a resin sealing member 3 .
- the die pad portion 4 is formed as a so-called small tab structure wherein its diameter is set smaller than the diameter of the semiconductor chip 2 so as to permit mounting thereon of plural types of semiconductor chips 2 ranging in one-side length from, for example, 4 to 7 mm.
- the die pad portion 4 is supported by four suspension leads 8 extending toward corners of the resin sealing member 3 . As shown in FIGS. 3 and 4 , front ends of each of the four suspension leads 8 are bifurcated near a corner of the resin sealing member 3 and the bifurcated portions are terminated at side faces of the resin sealing member 3 .
- Plural (for example, 116) leads 5 are arranged at approximately equal intervals around the die pad portion 4 with the semiconductor chip 2 mounted thereon.
- One ends (close to the semiconductor chip 2 ) of the leads 5 are electrically connected through Au wires 6 to bonding pads 7 formed on a main surface of the semiconductor chip 2 , while opposite ends thereof are terminated at side faces of the resin sealing member 3 .
- one ends (close to the semiconductor chip 2 ) of the leads 5 are extended to near the die pad portion 4 .
- the leads 5 are formed of the same metal as that of the die pad portion 4 and the suspension leads 8 and the thickness thereof is, for example, 65 to 75 ⁇ m.
- the opposite ends of the leads 5 and the front ends of the suspension leads 8 are exposed to outer side faces of the resin sealing member 3 .
- the opposite ends of the leads 5 and the front ends of the suspension leads 8 which are exposed to side faces of the resin sealing member 3 are covered throughout the respective whole peripheries (upper and lower surfaces and both side faces) with the resin which constitute the resin sealing member 3 .
- the QFN 1 is fabricated by resin-molding the semiconductor chip 2 , die pad portion 4 , leads 5 and suspension leads 8 to form the resin sealing member 3 and by cutting the leads 5 and suspension leads 8 exposed to the exterior of the resin sealing member 3 with use of a dicer.
- the cutting is performed in such a manner that the opposite ends of the leads 5 and the front ends of the suspension leads 8 are covered with resin throughout the respective whole peripheries, it is possible to prevent the formation of metallic burrs at the cut faces of the leads and the suspension leads 8 .
- plural (for example, 116 ) external connecting terminals 5 a are formed on a back surface (substrate mounting surface) of the resin sealing member 3 .
- the terminals 5 a are arranged zigzag in two rows along each side of the resin sealing member 3 . Surfaces of the terminals 5 a are projecting to the outside from the back surface of the resin sealing member 3 .
- the terminals 5 a which are integral with the leads 5 , are approximately twice (125 to 150 ⁇ m) as thick as the leads 5 .
- the projections 8 a are arranged near the corners of the resin sealing member 3 and their surfaces are projecting to the outside from the back surface of the resin sealing member 3 .
- the projections 8 a which are integral with the suspension leads 8 , are approximately twice (125 to 150 ⁇ m) as thick as the suspension leads 8 , i.e., equal to the thickness of each terminal 5 a.
- the surfaces of the terminals 5 a and projections 8 a projecting outside the resin sealing member 3 are each covered with a solder layer 9 by, for example, soldering or printing.
- the QFN 1 is mounted by connecting the surfaces of the terminals 5 a with electrodes (foot print) on a wiring substrate electrically through the solder layers 9 .
- the surfaces of the projections 8 a to the wiring substrate through the solder layers 9 , it is possible to enhance the reliability of connection between the QFN 1 and the wiring substrate.
- the lead frame LF 1 is constituted by a metallic sheet of, for example, Cu, Cu alloy, or Fe—Ni alloy.
- the lead frame LF 1 there are formed patterns of the die pad portion 4 , leads 5 , and suspension leads 8 repeatedly in both longitudinal and transverse directions. That is, the lead frame LF 1 has a multi-chip structure carrying plural (for example, 24) semiconductor chips 2 thereon.
- a metallic sheet of, for example, Cu, Cu alloy, or Fe—Ni alloy having a thickness of 125 to 150 ⁇ m and one side of the metallic sheet 10 is coated with a photoresist film 11 at positions where a die pad portion 4 , leads 5 and suspension leads 8 are to be formed.
- a photoresist film 11 at positions where the external connecting terminals 5 a and projections 8 a are to be formed, both sides of the metallic sheet 10 are coated with the photoresist film 11 .
- the metallic sheet 10 is etched (half etching) using a medical liquid to thin the metallic sheet to about half (65 to 75 ⁇ m) in one-side regions coated with the photoresist film 11 . If etching is performed by such a method, the metallic sheet 10 is removed completely in its regions not coated with the photoresist film 11 on both sides thereof, while a die pad portion 4 , leads 5 and suspension leads 8 , having a thickness of 65 to 75 ⁇ m, are formed in the regions coated with the photoresist film 11 on only one side.
- the metallic sheet 10 in the regions coated with the photoresist film 11 on both sides it is not etched with the medical liquid, so that there are formed terminals 5 a and projections 8 a of the same thickness (125 to 150 ⁇ m) as the metallic sheet 10 prior to etching.
- Ag plating 12 is applied to surfaces of one end sides of the leads 5 to complete the lead frame LF 1 shown in FIG. 8 .
- the means for applying Ag plating 12 to one end sides of the leads 5 may be substituted by applying Pd (palladium) plating to the whole surface of the lead frame LF 1 .
- Pd plating affords a thinner plating layer in comparison with Ag plating and therefore it is possible to improve the adhesion between leads 5 and Au wires 6 .
- plating layers are formed also on the surfaces of terminals 5 a and projections 8 a , so it is possible to omit the step of forming solder layers 9 on the surfaces of the terminals 5 a and projections 8 a.
- a semiconductor chip 2 is bonded onto the die pad portion 4 with use of an adhesive such as Au paste or an epoxy resin adhesive.
- grooves 31 be formed in a jig 30 A which supports the lead frame LF 1 at positions opposed to the terminals 5 a (and projections 8 a ). With the grooves 31 , it is possible to support the lead frame LF 1 stably, so that it is possible to prevent deformation of the lead frame LF 1 and mutual positional deviations of the die pad portion 4 and the semiconductor chip 2 at the time of mounting the semiconductor chip 2 onto the die pad portion 4 .
- bonding pads 7 of the semiconductor chip 2 and one end sides of the leads 5 are connected together through Au wires 6 by means of a known ball bonder. Also in this case, as shown in FIG. 15 , if grooves 31 are formed in a jig 30 B which supports the lead frame LF 1 at positions corresponding to the terminals 5 a , it is possible to support the lead frame LF 1 stably and hence possible to prevent mutual positional deviations of the Au wires 6 and the leads 5 and of the Au wires 6 and the bonding pad 7 .
- FIG. 16 is a sectional view showing a part (an area corresponding to approximately one QFN).
- a thin resin sheet 41 is laid over a surface of a lower die half 40 B and the lead frame LF 1 is placed on the resin sheet 41 .
- the lead frame LF 1 is placed on the resin sheet in such a manner that its side with terminals 5 a (and projections 8 a not shown) formed thereon faces down, allowing the terminals 5 a (and projections 8 a ) and the resin sheet 41 to be brought into contact with each other.
- the resin sheet 41 and the lead frame LF 1 are pinched by both upper die half 40 A and lower die half 40 B.
- the terminals 5 a (and projections 8 a ) positioned on the underside of the leads 5 hold down the resin sheet 41 under a pressing force of the molding die 40 (upper and lower die halves 40 A, 40 B), so that front end portions of the terminals (and projections Ba) bite into the resin sheet 41 .
- the thickness of each lead 5 is as small as about half of the thickness in the conventional lead frame. Consequently, the pressing force of the molding die 40 (upper and lower die halves 40 A, 40 B) against the lead frame LF 1 is weaker than in the use of the conventional lead frame and therefore the pressing force of the terminals 5 a and projections 8 a against the resin sheet 41 becomes weak, resulting in that the projecting height of the resin sealing member 3 projecting to the exterior becomes smaller.
- each terminal 5 a and that of each projection 8 a projecting to the outside of the resin sealing member 3 are to be made as large as possible, as shown in FIG. 19 , it is preferred that the portion (the circled portion in the figure) of the lead frame LF 1 in contact with the upper die half 40 A be not subjected to half etching, but be made equal in thickness as the terminals 5 a and projections 8 a.
- FIG. 20 is a plan view showing, with oblique lines, portions in which the upper die half 40 A of the molding die comes into contact with the lead frame LF 1 .
- FIG. 21 is a plan view showing schematically gate positions in the molding die 40 and flowing directions of molten resin injected into cavities.
- plural gates G 1 to G 8 are formed in one of long sides of the molding die 40 .
- resin is injected through the gate G 1 into three cavities C 1 to C 3 which are arranged in the short-side direction of the molding die 40 .
- three cavities C 4 to C 6 adjacent to the cavities C 1 to C 3 there is injected resin through the gate G 2 .
- dummy cavities DC 1 to DC 8 and air vents 42 are formed in the other long side of the molding die opposed to the long side where the gates G 1 to G 8 are formed there are formed dummy cavities DC 1 to DC 8 and air vents 42 .
- the air present within the cavities C 1 to C 3 flows into a dummy cavity DC 1 to prevent the formation of voids in the resin injected into the cavity C 3 .
- the position and number of gates to be provided in the molding die 40 are not limited to the above example. For example, there may be adopted such a structure as shown in FIG. 22 in which resin is injected to cavities C 1 to C 6 through one gate G 1 .
- FIG. 23 is a plan view of a surface side of a lead frame LF 1 fabricated by injecting resin into cavities (C 1 to C 24 ) of the molding die 40 to form resin sealing members 3 at a time and subsequent removal from the molding die
- FIG. 24 is a plan view of a back surface of the lead frame LF 1 . As shown in FIG. 24 , the terminals 5 a and projections 8 a are exposed to the back surface of each resin sealing member 3 .
- solder layers 9 are printed to the surfaces of the terminals 5 a and projections 8 a exposed to the back surface of the resin sealing member 3 (see FIGS. 6 and 7 ), then a mark such as product name is printed to the surface of each resin sealing member 3 , and thereafter the lead frame LF 1 is diced using a dicer to divide the lead frame into individual resin sealing members 3 .
- FIG. 25 a partial plan view of the lead frame LF 1
- FIG. 26 a sectional view taken along line X-X′ in FIG. 25
- FIG. 27 a partial enlarged sectional view of FIG. 26
- positions (cutting lines C) for cutting the lead frame LF 1 represent positions (cutting lines C) for cutting the lead frame LF 1 .
- the cutting lines C are positioned inside (central side of the resin sealing members 3 ) relative to lines (molding lines) extending along outer edges of the resin sealing members 3 . Therefore, if peripheral portions of the resin sealing members 3 and the lead frame LF 1 are cut together along the cutting lines C, the whole peripheries (upper and lower surfaces and both side faces) of the leads exposed to side faces (cut faces) of each resin sealing member 3 are covered with resin, so that metallic burrs are not formed on the cut faces of the leads 5 .
- dash-double dot lines shown in FIG. 29 represent cutting positions (cutting lines C′) in the conventional lead frame which lines are aligned with molding lines. If the lead frame LF 1 is cut along the cut lines C′, portions (upper surfaces) of the leads 5 exposed to side faces of each resin sealing member 3 are not covered with resin, as shown in FIG. 30 , so that metallic burrs are formed on the cut faces of the leads 5 . If the lead frame LF 1 is cut outside the molding lines, the whole peripheries of the leads 5 exposed to side faces of each resin sealing member 3 are not covered with resin, so that a larger number of metallic burrs are formed on the cut faces of the leads 5 .
- the front ends of the suspension leads 8 are bifurcated and are terminated at side faces of each resin sealing member 3 and therefore, as shown in FIG. 28 , cut faces of the suspension leads 8 exposed to side faces of the resin sealing member 3 are covered throughout the whole peripheries thereof with resin, thus preventing the occurrence of metallic burrs.
- a dicer having two blades 32 a arranged through the same spacing as the spacing between two adjacent cutting lines C, as shown in FIG. 33 , or a dicer provided with a blade 32 b having the same width as t the spacing between adjacent cutting lines C, whereby the cutting work can be done quickly.
- the QFN 1 of this embodiment is completed, as shown in FIGS. 1 to 7 .
- each resin sealing member 3 is also cut simultaneously with cutting the lead frame LF 1 with a dicer, whereby the whole peripheries of the front ends of the leads 5 and suspension leads 8 exposed to side faces of the resin sealing member 3 are covered with resin.
- the cut faces of the leads 5 and suspension leads 8 are free of metallic burrs and therefore it is possible to improve the production yield of QFN 1 .
- FIG. 35 is a plan view showing a part of the lead frame LF 2 used in manufacturing the QFN 1
- FIG. 36 is a sectional view taken along line Y-Y′ in FIG. 35
- FIG. 37 is a sectional view taken along line Z-Z′ in FIG. 35 .
- each of plural leads 5 formed in a lead frame LF 2 used in this embodiment is different in thickness between inside (closer to a die pad portion 4 ) and outside of the portion where each of terminals 5 a is formed. More specifically, in each lead 5 , the thickness (t′) of an outside portion ( FIG. 36 ) of the terminal 5 a is larger than the thickness (t) of an inside portion ( FIG. 37 ) of the terminal 5 a (t′>t).
- the lead frame LF 2 is fabricated by the method of half-etching a metallic sheet 10 described in the previous first embodiment (see FIGS. 9 and 10 ), but a difference from the first embodiment resides in that, at the time of forming photoresist films 11 on one side of the lead-forming area of the metallic sheet 10 , as shown in FIG. 38 , photoresist films 11 a narrower than the photoresist film 11 are formed in the portion outside the portion where terminals 5 a are formed and on the side opposite to the lead-forming area. On the other hand, as shown in FIG. 39 , in the portion inside the portion where terminals 5 a are formed, photoresist films 11 are formed on only one side of the lead-forming area of the metallic sheet 10 . Though not shown, in the portion where terminals 5 a are formed, photoresist films are formed on both sides of the metallic sheet 10 as is the case with the first embodiment.
- the method of half-etching the metallic sheet to form patterns is an effective method for diminishing the pitch of leads 5 and attain a multi-pin structure, but the rigidity of the leads 5 becomes deficient because of a small thickness of the leads 5 .
- the force of the terminals 5 a formed on leads 5 for pressing down the resin sheet 41 becomes weak and the height of terminals 5 a projecting outside the resin sealing member 3 becomes smaller.
- the leads 5 positioned outside the portion where terminals 5 a are formed are formed thick, so that the rigidity of the leads 5 become so much higher. Therefore, as shown in FIG. 42 , when the lead frame LF 2 is loaded into the molding die 40 and is pressed by both upper die half 40 A and lower die half 40 B, the pressing force of the terminals 5 a for the resin sheet 41 becomes larger, whereby the terminals 5 a projecting outside each resin sealing member 3 can be formed high. Moreover, as is the case with the first embodiment, by setting the thickness of the lead frame LF 2 equal to that of the terminals 5 a in the portion where the lead frame is in contact with the upper die half 40 A (see FIG. 19 ), it is possible to further increase the pressing force of the terminals 5 a against the resin sheet 41 .
- a countermeasure is to form a slit 50 with a press on one side of each lead 5 , whereby a highly rigid lead 5 can be formed even if the metallic sheet used is thin.
- FIG. 44 is a plan view showing a part of a surface of a lead frame LF 3 used in manufacturing QF 1
- FIG. 45 is a plan view showing a part of a back surface of the lead frame LF 3
- FIG. 45 is a perspective view showing a central portion (the area where a die pad portion 4 is formed) on a larger scale.
- the lead frame LF 3 is characteristic in that plural projections 4 a are formed along an outer periphery of a back surface of the die pad portion 4 . As shown in FIG. 47 , the projections 4 a are formed simultaneously with forming patterns (die pad portion 4 , leads 5 , suspension leads 8 ) of the lead frame LF 3 . More specifically, there is provided a metallic sheet 10 of, for example, Cu, Cu alloy, or Fe—Ni alloy having a thickness of 125 to 150 ⁇ m, and one side of the metallic sheet 10 is coated with photoresist film 11 in portions where a die pad 4 and leads 5 (and suspension leads 8 not shown) are to be formed.
- both sides of the metallic sheet 10 are coated with photoresist film 11 . If the metallic sheet 10 is half-etched in this state with a medical liquid, a die pad portion 4 and leads 5 (and suspension leads 8 not shown) having a thickness about half of the thickness of the metallic sheet 10 are formed in the area where only one side is coated with photoresist film 11 . In the area where both sides are coated with photoresist film 11 there are formed terminals 5 a and projections (and projections 8 a of suspension leads 8 not shown) having the same thickness as the metallic sheet 10 .
- a semiconductor chip 2 is mounted on the die pad portion 4 in the manner described above and is connected with the leads 5 through Au wires 6 , then the lead frame LF 3 is loaded into the molding die 40 , as shown in FIG. 48 .
- the gap between the upper die half 40 A and the semiconductor chip 2 is set wider than the gap between the lower die half 40 B and the semiconductor chip 2 .
- the terminals 5 a formed on the back surface of the leads 5 and the projections 4 a formed on the back surface of the die pad portion 4 come into contact with resin sheet 41 laid over the surface of the lower die half 40 B and their tips bite into the resin sheet 41 .
- molten resin 51 is injected through a gate into each cavity formed in the molding die 40 .
- the amount of molten resin 51 getting into the gap between the upper die half 40 A and the semiconductor chip 2 is larger than that getting into the gap between the lower die half 40 A and the semiconductor chip 2 because the former gap is wider than the latter gap. Consequently, a downward pressure is exerted on an upper surface of the semiconductor chip 2 mounted on the die pad portion 4 from the molten resin 51 which has entered the gap between the upper die half 40 A and the semiconductor chip 2 .
- the projections 4 a formed on the back surface of the die pad portion 4 is in contact with the resin sheet 41 , there is no fear that a positional deviation of the semiconductor chip 2 may be caused by the pressure of the molten resin 51 .
- the semiconductor chip 2 undergoes a positional deviation under the pressure of molten resin 51 and there arise defects such as Au wires 6 being exposed from the upper surface of the resin sealing member 3 or the die pad portion 4 being exposed from the underside of the resin sealing member 3 .
- FIG. 51 is a plan view of QFN 1 manufactured by using the lead frame LF 3 of this embodiment.
- the projections 4 a of the die pad portion 4 are projected to the back surface of the resin sealing member 3 . Therefore, at the time of forming the solder layer 9 to each of the projections 4 a and mounting the QFN 1 onto a wiring substrate, the surfaces of the projections 4 a are bonded to the wiring substrate through the solder layer 9 , whereby the reliability of connection between the QFN 1 and the wiring substrate can be enhanced. Further, since heat generated from the semiconductor chip 2 is transmitted to the exterior through the projections 4 a , QFN 1 superior in heat dissipating property can be provided.
- the projections 4 a formed on the back surface of the die pad portion 4 there may be adopted any desired shape insofar as the shape adopted can prevent a positional deviation of the semiconductor chip 2 caused by pressure of molten resin 51 flowing into the cavity.
- the projections 4 a may be such circular projections as shown in FIG. 52 , or projections 4 a may be formed not only on the back surface of the die pad portion 4 but also on part of the back surface of each suspension lead 8 as shown in FIG. 53 .
- patterns (die pad portion 4 , leads 5 , suspension leads 8 ) of the lead frame are formed by the half-etching method
- the present invention is also applicable to the case where those patterns are formed by punching a metallic sheet with use of a press.
- a metallic sheet 10 is punched with a press to form leads 5 , suspension leads 8 and a die pad portion 4 .
- the leads 5 are bent halfway downward to form terminals 5 a
- the suspension leads 8 are bent downward at a position close to their one ends to form projections 8 a .
- a part of the die pad portion 4 may be bent downward with a press to form such projections 4 a as referred to in the above third embodiment.
- the metallic sheet 10 is held between an upper die half 60 A and a lower die half 60 B of a pressing die 60 .
- a punch 61 provided in the upper die half 60 A is pushed into a die 62 formed in the lower die half 60 B, whereby intermediate portions of the leads 5 are deformed plastically and are bent downward to form terminals 5 a .
- the projections 8 a of the suspension leads 8 and the projections 4 a of the die pad portion 4 are also formed in the same manner.
- the terminals 5 a and the projections 4 a , 8 a may be formed of a material different from the material of the lead frame.
- a lead frame formed with patterns (die pad portion 4 , leads 5 and suspension leads 8 ) by the foregoing half-etching method or pressing method and resin or the like is applied to portions of the lead frame where terminals 5 a and projections 4 a , 8 a are to be formed.
- a semiconductor chip 2 is mounted on the lead frame and, after connecting the leads 5 and the semiconductor chip 2 with each other through Au wires 6 , resin sealing members 3 are formed using the molding die 40 described above.
- dummy terminals and projections exposed to the back surface of the resin sealing members 3 are melted off with a solvent and thereafter terminals 5 a and projections 4 a , 8 a are formed there by printing or plating.
- the above lead frame provided with the die pad portion 4 and the suspension leads 8 which support the die pad portion may be substituted by such a lead frame LF 5 as shown in FIG. 57 in which a chip support 33 such as a sheet-like insulating film is affixed to one ends of the leads 5 and a semiconductor chip 2 is mounted on the chip support 33 .
- the width of each terminal 5 a may be set equal to the width of each lead 5 to promote narrowing the pitch of the leads 5 .
- a peripheral portion of each of the resin sealing members is cut with the dicer to cover the whole peripheries of one end portions of leads exposed to cut faces of the resin sealing member with resin, whereby it is possible to prevent the occurrence of metallic burrs on the cut faces of the leads.
Abstract
It is intended to improve the production yield of QFN (Quad Flat Non-leaded package) and attain a multi-pin structure. After a resin sealing member for sealing a semiconductor chip is formed by molding, a peripheral portion of the resin sealing member and a lead frame are both cut along a cutting line which is positioned inside (on a central side of the resin sealing member) of a line (molding line) extending along an outer edge of the resin sealing member, whereby the whole surface (upper and lower surfaces and both side faces) of each of leads exposed to side faces (cut faces) of the resin sealing member is covered with resin, thus preventing the occurrence of metallic burrs on the cut faces of the leads.
Description
- The present invention relates to a semiconductor device and a method of manufacturing the same. Particularly, the present invention is concerned with a technique which is effectively applicable to a resin-sealed type semiconductor device.
- As a resin package wherein a semiconductor chip mounted on a lead frame is sealed with a sealing member of a molded resin there is known a QFN (Quad Flat Non-leaded package) (see, for example,
Patent Literatures 1 and 2). - The QFN is of a structure wherein one ends of plural leads which are electrically connected to a semiconductor chip through bonding wires are exposed from a back surface (underside) of an outer peripheral portion of a sealing member to constitute terminals, and bonding wires are connected to the surfaces opposite to the exposed surfaces of the terminals, i.e., to terminal surfaces in the interior of the sealing member, to connect the terminals and the semiconductor chip electrically with each other. By soldering these terminals to electrodes (foot print) of a wiring substrate, the semiconductor chip is mounted. This structure is advantageous in that the packaging area is smaller than that in a QFP (Quad Flat Package) wherein leads extend laterally from side faces of a package (a sealing member) to constitute terminals.
-
- [Patent Literature 1]
- Japanese Unexamined Patent Publication No. 2001-189410
- [Patent Literature 2]
- Japanese Patent No. 3072291
- In the above QFN manufacturing process, a semiconductor chip is mounted on a die pad portion of a lead frame, the semiconductor chip and leads are connected with each other using wires, then the lead frame is loaded into a molding die to seal the semiconductor chip with resin, and thereafter unnecessary portions of the lead frame exposed to the exterior of the resin sealing member are cut off with a dicer. At this time, metallic burrs occur in the cut faces of the leads, causing a lowering in the production yield of QFN. If the lead frame dicing speed with the dicer is set low, the occurrence of metallic burrs will be decreased, but the productivity of QFN is deteriorated because the lead frame dicing work consumes much time.
- Further, in the lead frame referred to above, lead patterns are formed by etching or pressing a metallic sheet, so if an attempt is made to attain a multi-pin structure of QFN and narrow the lead pitch, it is necessary to thin the metallic sheet used in fabricating the lead frame. As a result, leads and suspension leads become less rigid and a positional deviation of the semiconductor chip becomes easy to occur due to flowing of molten resin at the time of sealing the semiconductor chip with resin.
- It is an object of the present invention to provide a technique for improving the production yield of QFN.
- It is another object of the present invention to provide a technique capable of promoting a multi-pin structure of QFN.
- The above and other objects and novel features of the present invention will become apparent from the following description and the accompanying drawings.
- Typical modes of the invention disclosed herein will be outlined below.
- A semiconductor device according to the present invention comprises a semiconductor chip, a plurality of leads arranged around the semiconductor chip, terminals connected to the plural leads respectively, a plurality of wires for connecting the semiconductor chip and the plural leads electrically with each other, and a resin sealing member for sealing the semiconductor chip, the plural leads and the plural wires, the terminals connected respectively to the plural leads being exposed to the exterior from a back surface of the sealing member,
- wherein one ends of the plural leads are exposed to the exterior from side faces of the resin sealing member and are covered throughout the whole peripheries thereof with resin which constitutes the resin sealing member.
- A semiconductor device manufacturing method according to the present invention comprises the steps of:
- (a) providing a lead frame formed with plural patterns each including the die pad portion and the plural leads;
- (b) mounting a semiconductor chip on the die pad portion formed on the lead frame and connecting the semiconductor chip and the plural leads with each other through wires;
- (c) thereafter, sandwiching the lead frame between an upper die half and a lower die half and injecting resin into plural cavities formed between the upper and lower die halves to form a plurality of resin sealing members; and
- (d) thereafter, cutting the lead frame with a dicer to divide the plural resin sealing members into individual pieces;
- wherein, at the time of cutting the lead frame with the dicer in the step (d), peripheral portions of the plural resin sealing members are each cut with the dicer to cover the whole peripheries of one end portions of the plural leads with the resin which constitute the resin sealing members, the plural leads being exposed to the cut faces of the resin sealing members.
-
FIG. 1 is a perspective view showing an appearance of a semiconductor device according to a first embodiment of the present invention; -
FIG. 2 is a plan view showing an appearance (back surface) of the semiconductor device of the first embodiment; -
FIG. 3 is a plan view showing an internal structure (surface side) of the semiconductor device of the first embodiment; -
FIG. 4 is a plan view showing an internal structure (back surface) of the semiconductor device of the first embodiment; -
FIG. 5 is a side view of the semiconductor device of the first embodiment; -
FIG. 6 is a sectional view of the semiconductor device taken along line A-A inFIG. 1 ; -
FIG. 7 is a sectional view of the semiconductor device taken along line B-B inFIG. 1 ; -
FIG. 8 is a plan view of a lead frame used in manufacturing the semiconductor device of the first embodiment; -
FIG. 9 is a sectional view of a principal portion, showing how to fabricate the lead frame illustrated inFIG. 8 ; -
FIG. 10 is a sectional view of a principal portion, showing how to fabricate the lead frame illustrated inFIG. 8 ; -
FIG. 11 is a sectional view of a principal portion, showing how to fabricate the lead frame illustrated inFIG. 8 ; -
FIG. 12 is a plan view of a principal portion of the lead frame, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 13 is an explanatory diagram of a chip bonding step, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 14 is a plan view of a principal portion of the lead frame, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 15 is an explanatory diagram of a wire bonding step, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 16 is a sectional view of a principal portion of the lead frame and a molding die, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 17 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 18 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 19 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 20 is a plan view showing, with oblique lines, a portion where the upper die half of the molding die used in manufacturing the semiconductor device of the first embodiment comes into contact with the lead frame; -
FIG. 21 is a plan view showing schematically an example of gate positions in the molding die used in manufacturing the semiconductor device of the first embodiment, as well as an example of flowing directions of resin injected into cavities; -
FIG. 22 is a plan view showing schematically another example of gate positions in the molding die used in manufacturing the semiconductor device of the first embodiment, as well as another example of flowing directions of resin injected to cavities; -
FIG. 23 is an entire plan view (surface side) of the lead frame after molding, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 24 is an entire plan view (back surface) of the lead frame after molding, showing how to manufacture the semiconductor device of the first embodiment; -
FIG. 25 is a plan view of a principal portion, showing cutting lines for cutting the lead frame after molding; -
FIG. 26 is a sectional view showing cutting lines for cutting the lead frame after molding; -
FIG. 27 is a partial enlarged sectional view ofFIG. 26 ; -
FIG. 28 is a sectional view of a resin sealing member taken along a cutting line; -
FIG. 29 is a sectional view of a principal portion, showing conventional cutting lines for cutting the lead frame after molding; -
FIG. 30 is a sectional view of the resin sealing member taken along a conventional cutting line; -
FIG. 31 is a sectional view of the resin sealing member taken along a cutting line; -
FIG. 32 is a partial enlarged perspective view of the resin sealing member, showing a cut face of a suspension lead exposed to a corner portion; -
FIG. 33 is a sectional view of a principal portion, showing an example of a lead frame cutting method; -
FIG. 34 is a sectional view of a principal portion, showing another example of a lead frame cutting method; -
FIG. 35 is a plan view of a principal portion of a lead frame used in manufacturing a semiconductor device according to a second embodiment of the present invention; -
FIG. 36 is a sectional view of the lead frame taken along line Y-Y′ inFIG. 35 ; -
FIG. 37 is a sectional view of the lead frame taken along line Z-Z′ inFIG. 35 ; -
FIG. 38 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37; -
FIG. 39 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37; -
FIG. 40 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37; -
FIG. 41 is an explanatory diagram showing how to fabricate the lead frame illustrated in FIGS. 35 to 37; -
FIG. 42 is a sectional view of a principal portion of he lead frame and a molding die, showing how to manufacture the semiconductor device of the second embodiment; -
FIG. 43 is a sectional view of a principal portion of a lead frame used in manufacturing the semiconductor device of the second embodiment; -
FIG. 44 is a plan view (surface side) of a principal portion of a lead frame used in manufacturing a semiconductor device according to a third embodiment of the present invention; -
FIG. 45 is a plan view (back surface side) of a principal portion of the lead frame used in manufacturing the semiconductor device of the third embodiment; -
FIG. 46 is a perspective view showing a die pad portion of the lead frame illustrated inFIGS. 44 and 45 ; -
FIG. 47 is an explanatory diagram showing how to fabricate the lead frame illustrated inFIGS. 44 and 45 ; -
FIG. 48 is a sectional view of a principal portion of the lead frame and a molding die, showing how to manufacture the semiconductor device of the third embodiment; -
FIG. 49 is a sectional view of a principal portion of the lead frame and the molding die, showing how to manufacture the semiconductor device of the third embodiment; -
FIG. 50 is a sectional view of a principal portion of a lead frame and a molding die, showing a problem involved in a molding step for a resin sealing member; -
FIG. 51 is a plan view showing an appearance (back surface side) of the semiconductor device of the third embodiment; -
FIG. 52 is a plan view (back surface side) of a principal portion of a lead frame employable in manufacturing the semiconductor device of the third embodiment; -
FIG. 53 is a plan view (back surface side) of a principal portion of a lead frame employable in manufacturing the semiconductor device of the third embodiment; -
FIG. 54 is an explanatory diagram showing how to fabricate a lead frame used in manufacturing a semiconductor device further embodying the present invention; -
FIG. 55 is an explanatory diagram showing how to fabricate the lead frame illustrated inFIG. 54 ; -
FIG. 56 is an explanatory diagram showing how to fabricate the lead frame illustrated inFIG. 54 ; and -
FIG. 57 is a plan view of a principal portion of a lead frame used in manufacturing a semiconductor device further embodying the present invention. - Embodiments of the present invention will be described in detail hereinunder with reference to the drawings. In all of the drawings for illustrating the embodiments, components having the same functions are identified by like reference numerals, and repeated explanations thereof will be omitted. Further, in the following embodiments, explanations of the same or similar portions will not be repeated in principle except where explanations are specially needed.
- (First Embodiment)
-
FIG. 1 is a perspective view showing an appearance of a QFN according to an embodiment of the present invention,FIG. 2 is a plan view showing an appearance (back surface) of the QFN,FIG. 3 is a plan view showing an internal structure (surface side) of the QFN,FIG. 4 is a plan view showing an internal structure (back surface) of the QFN,FIG. 5 is a side view of the QFN,FIG. 6 is a sectional view taken along line A-A inFIG. 1 , andFIG. 7 is a sectional view taken along line B-B inFIG. 1 . - The QFN of this embodiment, indicated at 1, is a surface-mounted type package wherein one
semiconductor chip 2 is sealed with aresin sealing member 3. It external dimensions are, for example, 12 mm long, 12 mm wide, and 1.0 mm thick. - A
semiconductor chip 2 is mounted on an upper surface of a metallicdie pad portion 4 and in this state is disposed at a center of aresin sealing member 3. Thedie pad portion 4 is formed as a so-called small tab structure wherein its diameter is set smaller than the diameter of thesemiconductor chip 2 so as to permit mounting thereon of plural types ofsemiconductor chips 2 ranging in one-side length from, for example, 4 to 7 mm. - The
die pad portion 4 is supported by four suspension leads 8 extending toward corners of theresin sealing member 3. As shown inFIGS. 3 and 4 , front ends of each of the four suspension leads 8 are bifurcated near a corner of theresin sealing member 3 and the bifurcated portions are terminated at side faces of theresin sealing member 3. - Plural (for example, 116) leads 5 are arranged at approximately equal intervals around the
die pad portion 4 with thesemiconductor chip 2 mounted thereon. One ends (close to the semiconductor chip 2) of theleads 5 are electrically connected throughAu wires 6 tobonding pads 7 formed on a main surface of thesemiconductor chip 2, while opposite ends thereof are terminated at side faces of theresin sealing member 3. In order to shorten the distance from thesemiconductor chip 2, one ends (close to the semiconductor chip 2) of theleads 5 are extended to near thedie pad portion 4. The leads 5 are formed of the same metal as that of thedie pad portion 4 and the suspension leads 8 and the thickness thereof is, for example, 65 to 75 μm. - As shown in
FIGS. 1 and 5 , the opposite ends of theleads 5 and the front ends of the suspension leads 8 are exposed to outer side faces of theresin sealing member 3. The opposite ends of theleads 5 and the front ends of the suspension leads 8, which are exposed to side faces of theresin sealing member 3 are covered throughout the respective whole peripheries (upper and lower surfaces and both side faces) with the resin which constitute theresin sealing member 3. - As will be described later, the
QFN 1 is fabricated by resin-molding thesemiconductor chip 2, diepad portion 4, leads 5 and suspension leads 8 to form theresin sealing member 3 and by cutting theleads 5 and suspension leads 8 exposed to the exterior of theresin sealing member 3 with use of a dicer. At the time of cutting theleads 5 and the suspension leads 8 by the dicer, if the cutting is performed in such a manner that the opposite ends of theleads 5 and the front ends of the suspension leads 8 are covered with resin throughout the respective whole peripheries, it is possible to prevent the formation of metallic burrs at the cut faces of the leads and the suspension leads 8. - As shown in
FIG. 2 , plural (for example, 116) external connectingterminals 5 a are formed on a back surface (substrate mounting surface) of theresin sealing member 3. Theterminals 5 a are arranged zigzag in two rows along each side of theresin sealing member 3. Surfaces of theterminals 5 a are projecting to the outside from the back surface of theresin sealing member 3. Theterminals 5 a, which are integral with theleads 5, are approximately twice (125 to 150 μm) as thick as the leads 5. - On the back surface of the
resin sealing member 3 there are formed fourprojections 8 a. Theprojections 8 a are arranged near the corners of theresin sealing member 3 and their surfaces are projecting to the outside from the back surface of theresin sealing member 3. Theprojections 8 a, which are integral with the suspension leads 8, are approximately twice (125 to 150 μm) as thick as the suspension leads 8, i.e., equal to the thickness of each terminal 5 a. - As shown in
FIGS. 6 and 7 , the surfaces of theterminals 5 a andprojections 8 a projecting outside theresin sealing member 3 are each covered with asolder layer 9 by, for example, soldering or printing. TheQFN 1 is mounted by connecting the surfaces of theterminals 5 a with electrodes (foot print) on a wiring substrate electrically through the solder layers 9. At this time, by bonding the surfaces of theprojections 8 a to the wiring substrate through the solder layers 9, it is possible to enhance the reliability of connection between theQFN 1 and the wiring substrate. - A description will now be given about a method of manufacturing the
QFN 1. First, there is provided such a lead frame LF1 as shown inFIG. 8 . The lead frame LF1 is constituted by a metallic sheet of, for example, Cu, Cu alloy, or Fe—Ni alloy. On the lead frame LF1 there are formed patterns of thedie pad portion 4, leads 5, and suspension leads 8 repeatedly in both longitudinal and transverse directions. That is, the lead frame LF1 has a multi-chip structure carrying plural (for example, 24)semiconductor chips 2 thereon. - For fabricating the lead frame LF1, as shown in
FIGS. 9 and 10 , there is provided a metallic sheet of, for example, Cu, Cu alloy, or Fe—Ni alloy, having a thickness of 125 to 150 μm and one side of themetallic sheet 10 is coated with aphotoresist film 11 at positions where adie pad portion 4, leads 5 and suspension leads 8 are to be formed. Likewise, at positions where the external connectingterminals 5 a andprojections 8 a are to be formed, both sides of themetallic sheet 10 are coated with thephotoresist film 11. Then, in this state, themetallic sheet 10 is etched (half etching) using a medical liquid to thin the metallic sheet to about half (65 to 75 μm) in one-side regions coated with thephotoresist film 11. If etching is performed by such a method, themetallic sheet 10 is removed completely in its regions not coated with thephotoresist film 11 on both sides thereof, while adie pad portion 4, leads 5 and suspension leads 8, having a thickness of 65 to 75 μm, are formed in the regions coated with thephotoresist film 11 on only one side. As to themetallic sheet 10 in the regions coated with thephotoresist film 11 on both sides, it is not etched with the medical liquid, so that there are formedterminals 5 a andprojections 8 a of the same thickness (125 to 150 μm) as themetallic sheet 10 prior to etching. - Next, after removal of the
photoresist film 11, as shown inFIG. 11 , Ag plating 12 is applied to surfaces of one end sides of theleads 5 to complete the lead frame LF1 shown inFIG. 8 . The means for applying Ag plating 12 to one end sides of theleads 5 may be substituted by applying Pd (palladium) plating to the whole surface of the lead frame LF1. Pd plating affords a thinner plating layer in comparison with Ag plating and therefore it is possible to improve the adhesion betweenleads 5 andAu wires 6. In case of applying Pd plating to the entire surface of the lead frame LF1, plating layers are formed also on the surfaces ofterminals 5 a andprojections 8 a, so it is possible to omit the step of formingsolder layers 9 on the surfaces of theterminals 5 a andprojections 8 a. - Thus, by applying half etching to a part of the
metallic sheet 10 serving as a base material of the lead frame LF1 to thin the sheet thickness to half or so of the original thickness, it is possible to form thindie pad portion 4, leads 5 and suspension leads 8 andthick terminals 5 a andprojections 8 a at a time. - For fabricating
QFN 1 by using the lead frame LF1, first, as shown inFIGS. 12 and 13 , asemiconductor chip 2 is bonded onto thedie pad portion 4 with use of an adhesive such as Au paste or an epoxy resin adhesive. - When conducting the above work, as shown in
FIG. 13 , sinceterminals 5 a (andprojections 8 a not shown) are positioned on the back surface of the lead frame LF1, it is preferable thatgrooves 31 be formed in ajig 30A which supports the lead frame LF1 at positions opposed to theterminals 5 a (andprojections 8 a). With thegrooves 31, it is possible to support the lead frame LF1 stably, so that it is possible to prevent deformation of the lead frame LF1 and mutual positional deviations of thedie pad portion 4 and thesemiconductor chip 2 at the time of mounting thesemiconductor chip 2 onto thedie pad portion 4. - Next, as shown in
FIGS. 14 and 15 ,bonding pads 7 of thesemiconductor chip 2 and one end sides of theleads 5 are connected together throughAu wires 6 by means of a known ball bonder. Also in this case, as shown inFIG. 15 , ifgrooves 31 are formed in ajig 30B which supports the lead frame LF1 at positions corresponding to theterminals 5 a, it is possible to support the lead frame LF1 stably and hence possible to prevent mutual positional deviations of theAu wires 6 and theleads 5 and of theAu wires 6 and thebonding pad 7. - Next, the lead frame LF1 is loaded into a
molding die 40 shown inFIG. 16 and thesemiconductor chip 2 is sealed with resin.FIG. 16 is a sectional view showing a part (an area corresponding to approximately one QFN). - For sealing the
semiconductor chip 2 with resin by using the molding die 40, first athin resin sheet 41 is laid over a surface of alower die half 40B and the lead frame LF1 is placed on theresin sheet 41. In this case, the lead frame LF1 is placed on the resin sheet in such a manner that its side withterminals 5 a (andprojections 8 a not shown) formed thereon faces down, allowing theterminals 5 a (andprojections 8 a) and theresin sheet 41 to be brought into contact with each other. In this state, theresin sheet 41 and the lead frame LF1 are pinched by bothupper die half 40A andlower die half 40B. By so doing, theterminals 5 a (andprojections 8 a) positioned on the underside of theleads 5 hold down theresin sheet 41 under a pressing force of the molding die 40 (upper and lower diehalves resin sheet 41. - As a result, if molten resin is injected into a gap (cavity) between the upper and lower die
halves resin sealing member 3 and if both die halves are then separated from each other, the front end portions of theterminals 5 a andprojections 8 a which have bitten into theresin sheet 41 project to the exterior from the back surface of theresin sealing member 3, as shown inFIGS. 17 and 18 . - In the lead frame LF1 used in this embodiment, as noted earlier, since patterns (die
pad portion 4, leads 5, and suspension leads 8) are formed by half etching, the thickness of eachlead 5 is as small as about half of the thickness in the conventional lead frame. Consequently, the pressing force of the molding die 40 (upper and lower diehalves terminals 5 a andprojections 8 a against theresin sheet 41 becomes weak, resulting in that the projecting height of theresin sealing member 3 projecting to the exterior becomes smaller. - Therefore, if the height of each terminal 5 a and that of each
projection 8 a projecting to the outside of theresin sealing member 3 are to be made as large as possible, as shown inFIG. 19 , it is preferred that the portion (the circled portion in the figure) of the lead frame LF1 in contact with theupper die half 40A be not subjected to half etching, but be made equal in thickness as theterminals 5 a andprojections 8 a. -
FIG. 20 is a plan view showing, with oblique lines, portions in which theupper die half 40A of the molding die comes into contact with the lead frame LF1.FIG. 21 is a plan view showing schematically gate positions in the molding die 40 and flowing directions of molten resin injected into cavities. - As shown in
FIG. 20 , according to the structure of the molding die 40, only outer frame portions of the lead frame LF1 and connections betweenadjacent leads 5 are in contact with theupper die half 40A and all the other areas are utilized effectively as cavities for the injection of resin therein. - As shown in
FIG. 21 , plural gates G1 to G8 are formed in one of long sides of the molding die 40. For example, resin is injected through the gate G1 into three cavities C1 to C3 which are arranged in the short-side direction of the molding die 40. Further, into three cavities C4 to C6 adjacent to the cavities C1 to C3 there is injected resin through the gate G2. On other hand, in the other long side of the molding die opposed to the long side where the gates G1 to G8 are formed there are formed dummy cavities DC1 to DC8 and air vents 42. For example, when resin is injected into the cavities C1 to C3 through the gate G1, the air present within the cavities C1 to C3 flows into a dummy cavity DC1 to prevent the formation of voids in the resin injected into the cavity C3. The position and number of gates to be provided in the molding die 40 are not limited to the above example. For example, there may be adopted such a structure as shown inFIG. 22 in which resin is injected to cavities C1 to C6 through one gate G1. -
FIG. 23 is a plan view of a surface side of a lead frame LF1 fabricated by injecting resin into cavities (C1 to C24) of the molding die 40 to formresin sealing members 3 at a time and subsequent removal from the molding die, andFIG. 24 is a plan view of a back surface of the lead frame LF1. As shown inFIG. 24 , theterminals 5 a andprojections 8 a are exposed to the back surface of eachresin sealing member 3. - Next,
solder layers 9 are printed to the surfaces of theterminals 5 a andprojections 8 a exposed to the back surface of the resin sealing member 3 (seeFIGS. 6 and 7 ), then a mark such as product name is printed to the surface of eachresin sealing member 3, and thereafter the lead frame LF1 is diced using a dicer to divide the lead frame into individualresin sealing members 3. - Dash-double dot lines shown in
FIG. 25 (a partial plan view of the lead frame LF1),FIG. 26 (a sectional view taken along line X-X′ inFIG. 25 ) andFIG. 27 (a partial enlarged sectional view ofFIG. 26 ) represent positions (cutting lines C) for cutting the lead frame LF1. - As shown in the figures, the cutting lines C are positioned inside (central side of the resin sealing members 3) relative to lines (molding lines) extending along outer edges of the
resin sealing members 3. Therefore, if peripheral portions of theresin sealing members 3 and the lead frame LF1 are cut together along the cutting lines C, the whole peripheries (upper and lower surfaces and both side faces) of the leads exposed to side faces (cut faces) of eachresin sealing member 3 are covered with resin, so that metallic burrs are not formed on the cut faces of theleads 5. - On the other hand, dash-double dot lines shown in
FIG. 29 represent cutting positions (cutting lines C′) in the conventional lead frame which lines are aligned with molding lines. If the lead frame LF1 is cut along the cut lines C′, portions (upper surfaces) of theleads 5 exposed to side faces of eachresin sealing member 3 are not covered with resin, as shown inFIG. 30 , so that metallic burrs are formed on the cut faces of theleads 5. If the lead frame LF1 is cut outside the molding lines, the whole peripheries of theleads 5 exposed to side faces of eachresin sealing member 3 are not covered with resin, so that a larger number of metallic burrs are formed on the cut faces of theleads 5. - In this embodiment, moreover, the front ends of the suspension leads 8 are bifurcated and are terminated at side faces of each
resin sealing member 3 and therefore, as shown inFIG. 28 , cut faces of the suspension leads 8 exposed to side faces of theresin sealing member 3 are covered throughout the whole peripheries thereof with resin, thus preventing the occurrence of metallic burrs. - On the other hand, if the front ends of the suspension leads 8 are terminated at the corners of the
resin sealing member 3, a part (as indicated with arrow inFIG. 32 ) of thesuspension lead 8 exposed to side faces of each corner of eachresin sealing member 3 is not covered with resin and metallic burrs are formed therein, as shown inFIGS. 31 and 32 , not only in the case where the lead frame LF1 is cut along the cutting lines C′ (molding lines) but also in the case where peripheral portions of theresin sealing members 3 and the lead frame LF1 are cut along the cutting line C. - In case of cutting peripheral portions of the
resin sealing members 3 and the lead frame LF1 along the cutting lines C, there may be used a dicer having twoblades 32 a arranged through the same spacing as the spacing between two adjacent cutting lines C, as shown inFIG. 33 , or a dicer provided with ablade 32 b having the same width as t the spacing between adjacent cutting lines C, whereby the cutting work can be done quickly. - If the peripheral portion of each resin sealing member is cut with a dicer, external dimensions of the
resin sealing member 3 become smaller than its external dimensions just after the molding. For this reason, internal dimensions of each cavity in the molding die 40 used in this embodiment are set a little larger than external dimensions ofQFN 1 at completion. - By thus dividing into individual
resin sealing members 3, theQFN 1 of this embodiment is completed, as shown in FIGS. 1 to 7. - Thus, in this embodiment, the peripheral portion of each
resin sealing member 3 is also cut simultaneously with cutting the lead frame LF1 with a dicer, whereby the whole peripheries of the front ends of theleads 5 and suspension leads 8 exposed to side faces of theresin sealing member 3 are covered with resin. As a result, the cut faces of theleads 5 and suspension leads 8 are free of metallic burrs and therefore it is possible to improve the production yield ofQFN 1. - (Second Embodiment)
-
FIG. 35 is a plan view showing a part of the lead frame LF2 used in manufacturing theQFN 1,FIG. 36 is a sectional view taken along line Y-Y′ inFIG. 35 , andFIG. 37 is a sectional view taken along line Z-Z′ inFIG. 35 . - As shown in the figures, each of plural leads 5 formed in a lead frame LF2 used in this embodiment is different in thickness between inside (closer to a die pad portion 4) and outside of the portion where each of
terminals 5 a is formed. More specifically, in eachlead 5, the thickness (t′) of an outside portion (FIG. 36 ) of the terminal 5 a is larger than the thickness (t) of an inside portion (FIG. 37 ) of the terminal 5 a (t′>t). - The lead frame LF2 is fabricated by the method of half-etching a
metallic sheet 10 described in the previous first embodiment (seeFIGS. 9 and 10 ), but a difference from the first embodiment resides in that, at the time of formingphotoresist films 11 on one side of the lead-forming area of themetallic sheet 10, as shown inFIG. 38 ,photoresist films 11 a narrower than thephotoresist film 11 are formed in the portion outside the portion whereterminals 5 a are formed and on the side opposite to the lead-forming area. On the other hand, as shown inFIG. 39 , in the portion inside the portion whereterminals 5 a are formed,photoresist films 11 are formed on only one side of the lead-forming area of themetallic sheet 10. Though not shown, in the portion whereterminals 5 a are formed, photoresist films are formed on both sides of themetallic sheet 10 as is the case with the first embodiment. - If the
metallic sheet 10 is etched in this state with a medical liquid, centrallythick leads 5 having such a sectional shape as shown inFIG. 40 are formed outside theterminals 5 a because the amount of etching is different between both sides of themetallic sheet 10. On the other hand, in the portion inside theterminals 5 a,thin leads 5 having such a sectional shape as shown inFIG. 41 are formed because only the side free ofphotoresist films 11 is subjected to half etching. Thereafter, by removingphotoresist films metallic sheet 10 there is obtained such a lead frame LF2 as shown in FIGS. 35 to 37. - The method of half-etching the metallic sheet to form patterns (die
pad portion 4, leads 5, and suspension leads 8) is an effective method for diminishing the pitch ofleads 5 and attain a multi-pin structure, but the rigidity of theleads 5 becomes deficient because of a small thickness of theleads 5. As a result, there arises a problem that, at the time of loading the lead frame into the molding die 40 used in the first embodiment and formingresin sealing members 3, the force of theterminals 5 a formed onleads 5 for pressing down theresin sheet 41 becomes weak and the height ofterminals 5 a projecting outside theresin sealing member 3 becomes smaller. - In contrast therewith, in the lead frame LF2 according to this second embodiment, the
leads 5 positioned outside the portion whereterminals 5 a are formed are formed thick, so that the rigidity of theleads 5 become so much higher. Therefore, as shown inFIG. 42 , when the lead frame LF2 is loaded into the molding die 40 and is pressed by bothupper die half 40A andlower die half 40B, the pressing force of theterminals 5 a for theresin sheet 41 becomes larger, whereby theterminals 5 a projecting outside eachresin sealing member 3 can be formed high. Moreover, as is the case with the first embodiment, by setting the thickness of the lead frame LF2 equal to that of theterminals 5 a in the portion where the lead frame is in contact with theupper die half 40A (seeFIG. 19 ), it is possible to further increase the pressing force of theterminals 5 a against theresin sheet 41. - Also in case of punching a metallic sheet with a press to form patterns (die
pad portion 4, leads 5, suspension leads 8), if it is intended to narrow the pitch ofleads 5 and realize a multi-pin structure, the use of a thin metallic sheet is required, with the result that the rigidity of theleads 5 becomes deficient. A countermeasure is to form aslit 50 with a press on one side of eachlead 5, whereby a highlyrigid lead 5 can be formed even if the metallic sheet used is thin. - (Third Embodiment)
-
FIG. 44 is a plan view showing a part of a surface of a lead frame LF3 used in manufacturing QF1,FIG. 45 is a plan view showing a part of a back surface of the lead frame LF3, andFIG. 45 is a perspective view showing a central portion (the area where adie pad portion 4 is formed) on a larger scale. - The lead frame LF3 is characteristic in that
plural projections 4 a are formed along an outer periphery of a back surface of thedie pad portion 4. As shown inFIG. 47 , theprojections 4 a are formed simultaneously with forming patterns (diepad portion 4, leads 5, suspension leads 8) of the lead frame LF3. More specifically, there is provided ametallic sheet 10 of, for example, Cu, Cu alloy, or Fe—Ni alloy having a thickness of 125 to 150 μm, and one side of themetallic sheet 10 is coated withphotoresist film 11 in portions where adie pad 4 and leads 5 (and suspension leads 8 not shown) are to be formed. In portions whereterminals 5 a andprojections 4 a (andprojections 8 a of suspension leads 8 not shown) are to be formed, both sides of themetallic sheet 10 are coated withphotoresist film 11. If themetallic sheet 10 is half-etched in this state with a medical liquid, adie pad portion 4 and leads 5 (and suspension leads 8 not shown) having a thickness about half of the thickness of themetallic sheet 10 are formed in the area where only one side is coated withphotoresist film 11. In the area where both sides are coated withphotoresist film 11 there are formedterminals 5 a and projections (andprojections 8 a of suspension leads 8 not shown) having the same thickness as themetallic sheet 10. - For fabricating
QFN 1 with use of the lead frame LF3, asemiconductor chip 2 is mounted on thedie pad portion 4 in the manner described above and is connected with theleads 5 throughAu wires 6, then the lead frame LF3 is loaded into the molding die 40, as shown inFIG. 48 . At this time, in this embodiment, the gap between theupper die half 40A and thesemiconductor chip 2 is set wider than the gap between thelower die half 40B and thesemiconductor chip 2. - If in this state the lead frame LF3 is pinched by both
upper die half 40A andlower die half 40B, theterminals 5 a formed on the back surface of theleads 5 and theprojections 4 a formed on the back surface of thedie pad portion 4 come into contact withresin sheet 41 laid over the surface of thelower die half 40B and their tips bite into theresin sheet 41. - Next, as shown in
FIG. 49 ,molten resin 51 is injected through a gate into each cavity formed in the molding die 40. At this time, the amount ofmolten resin 51 getting into the gap between theupper die half 40A and thesemiconductor chip 2 is larger than that getting into the gap between thelower die half 40A and thesemiconductor chip 2 because the former gap is wider than the latter gap. Consequently, a downward pressure is exerted on an upper surface of thesemiconductor chip 2 mounted on thedie pad portion 4 from themolten resin 51 which has entered the gap between theupper die half 40A and thesemiconductor chip 2. However, since theprojections 4 a formed on the back surface of thedie pad portion 4 is in contact with theresin sheet 41, there is no fear that a positional deviation of thesemiconductor chip 2 may be caused by the pressure of themolten resin 51. - In contrast therewith, as shown in
FIG. 50 , if theprojections 4 a are not formed on the back surface of thedie pad portion 4, thesemiconductor chip 2 undergoes a positional deviation under the pressure ofmolten resin 51 and there arise defects such asAu wires 6 being exposed from the upper surface of theresin sealing member 3 or thedie pad portion 4 being exposed from the underside of theresin sealing member 3. - Heretofore, as measure for preventing a positional deviation of the
semiconductor chip 2 caused by a pressure developed when moltenresin 51 flows into a die cavity, there has been adopted a “tab-up technique” wherein the suspension leads 8 which support thedie pad portion 4 are bent to equalize the gap between theupper die half 40A and thesemiconductor chip 2 to the gap between thelower die half 40B and thesemiconductor chip 2. However, as the pitch of theleads 5 becomes more and more narrow with the attainment of a multi-pin structure ofQFN 1 and the thickness of the metallic sheet which constitutes the lead frame becomes extremely small, the rigidity of the suspension leads 8 is deteriorated. As result, it is difficult to prevent a positional deviation of thesemiconductor chip 2 even if there is adopted the “tab-up” technique. - On the other hand, according to this embodiment wherein
projections 4 a are formed on the back surface of thedie pad portion 4 and are brought into close contact with theresin sheet 41 laid on thelower die half 40B, the metallic sheet which constitutes the lead frame LF3 becomes extremely thin, and even in the case where the rigidity of the suspension leads 8 is deteriorated, it is possible to surely prevent a positional deviation of thesemiconductor chip 2 caused by the pressure ofmolten resin 51 flowing into the cavity, thus making it possible to improve the production yield ofQFN 1 having a multi-pin structure. -
FIG. 51 is a plan view ofQFN 1 manufactured by using the lead frame LF3 of this embodiment. As shown in the same figure, in case of using the lead frame LF3, theprojections 4 a of thedie pad portion 4 are projected to the back surface of theresin sealing member 3. Therefore, at the time of forming thesolder layer 9 to each of theprojections 4 a and mounting theQFN 1 onto a wiring substrate, the surfaces of theprojections 4 a are bonded to the wiring substrate through thesolder layer 9, whereby the reliability of connection between theQFN 1 and the wiring substrate can be enhanced. Further, since heat generated from thesemiconductor chip 2 is transmitted to the exterior through theprojections 4 a,QFN 1 superior in heat dissipating property can be provided. - As to the shape of the
projections 4 a formed on the back surface of thedie pad portion 4, there may be adopted any desired shape insofar as the shape adopted can prevent a positional deviation of thesemiconductor chip 2 caused by pressure ofmolten resin 51 flowing into the cavity. For example, theprojections 4 a may be such circular projections as shown inFIG. 52 , orprojections 4 a may be formed not only on the back surface of thedie pad portion 4 but also on part of the back surface of eachsuspension lead 8 as shown inFIG. 53 . - Although the present invention has been described concretely on the basis of embodiments of the invention, it goes without saying that the present invention is not limited to the above embodiments, but that various changes may be made within the scope not departing from the gist of the invention.
- Although in the above embodiments patterns (die
pad portion 4, leads 5, suspension leads 8) of the lead frame are formed by the half-etching method, the present invention is also applicable to the case where those patterns are formed by punching a metallic sheet with use of a press. - For fabricating the lead frame LF4 by the press method, as shown in
FIGS. 54 and 55 , first ametallic sheet 10 is punched with a press to form leads 5, suspension leads 8 and adie pad portion 4. Next, theleads 5 are bent halfway downward to formterminals 5 a, while the suspension leads 8 are bent downward at a position close to their one ends to formprojections 8 a. At this time, a part of thedie pad portion 4 may be bent downward with a press to formsuch projections 4 a as referred to in the above third embodiment. - For forming the
terminals 5 a, as shown inFIG. 56 , themetallic sheet 10 is held between anupper die half 60A and alower die half 60B of apressing die 60. In this state, apunch 61 provided in theupper die half 60A is pushed into a die 62 formed in thelower die half 60B, whereby intermediate portions of theleads 5 are deformed plastically and are bent downward to formterminals 5 a. Though not shown, theprojections 8 a of the suspension leads 8 and theprojections 4 a of thedie pad portion 4 are also formed in the same manner. - The
terminals 5 a and theprojections pad portion 4, leads 5 and suspension leads 8) by the foregoing half-etching method or pressing method and resin or the like is applied to portions of the lead frame whereterminals 5 a andprojections semiconductor chip 2 is mounted on the lead frame and, after connecting theleads 5 and thesemiconductor chip 2 with each other throughAu wires 6,resin sealing members 3 are formed using the molding die 40 described above. Then, dummy terminals and projections exposed to the back surface of theresin sealing members 3 are melted off with a solvent and thereafterterminals 5 a andprojections - The above lead frame provided with the
die pad portion 4 and the suspension leads 8 which support the die pad portion may be substituted by such a lead frame LF5 as shown inFIG. 57 in which achip support 33 such as a sheet-like insulating film is affixed to one ends of theleads 5 and asemiconductor chip 2 is mounted on thechip support 33. Moreover, as shown in the same figure, the width of each terminal 5 a may be set equal to the width of each lead 5 to promote narrowing the pitch of theleads 5. - The following is a brief description of an effect obtained by typical modes of the invention as disclosed herein.
- At the time of cutting the lead frame portion exposed to the exterior of resin sealing members by means of a dicer, a peripheral portion of each of the resin sealing members is cut with the dicer to cover the whole peripheries of one end portions of leads exposed to cut faces of the resin sealing member with resin, whereby it is possible to prevent the occurrence of metallic burrs on the cut faces of the leads.
Claims (10)
1-15. (canceled)
16. A method of manufacturing a semiconductor device comprising the step of:
(a) providing a lead frame formed with a plurality of patterns including a die pad and a plurality of leads arranged around the die pad;
(b) mounting a plurality of semiconductor chips over the plurality of die pads respectively;
(c) electrically connecting the plurality of semiconductor chips and the plurality of leads through a plurality of wires respectively;
(d) after the step (c), sandwiching the lead frame between an upper molding die and a lower molding die, and injecting resin into a plurality of cavities to form a plurality of resin sealing members, the plurality of cavities being formed between the upper molding die and the lower molding die, and corresponding to the plurality of patterns respectively; and
(e) after the step (d), cutting the lead frame and the plurality of resin sealing members with a dicer to divide the plurality of resin sealing members into individual pieces,
wherein in the plurality of resin sealing members formed in the step (d), adjacent resin sealing members connect to each other.
17. A method of manufacturing a semiconductor device according to claim 16 , wherein the lead frame has a terminal formed on each of the plurality of leads, and a contact portion formed in a point contacting with the upper molding die, the contact portion being formed with substantially the same thickness as the terminal, and
wherein the step (e) includes cutting between the terminal and the contact portion with the dicer to divide the plurality of resin sealing members into individual pieces.
18. A method of manufacturing a semiconductor device according to claim 17 , wherein a member for constituting the lead frame is subjected to half-etching at portions other than parts corresponding to the terminal and the contact portion.
19. A method of manufacturing a semiconductor device according to claim 16 , wherein in the step (d) includes sandwiching the lead frame at positions disposed to be between adjacent resin sealing members.
20. A method of manufacturing a semiconductor device according to claim 16 , wherein a plurality of gate portions are formed at one side of the upper molding die outside the plurality of cavities, and a plurality of dummy cavities and a plurality of air vents are formed at another side opposite to the one side of the upper molding die.
21. A method of manufacturing a semiconductor device according to claim 16 , wherein the dicer has two dicing blades and cuts to-be-cut faces of adjacent resin sealing members simultaneously.
22. A method of manufacturing a semiconductor device according to claim 16 , wherein the dicer has one dicing blade, the dicing blade having a width equal to a spacing between to-be-cut faces of adjacent resin sealing members.
23. A method of manufacturing a semiconductor device according to claim 16 ,
wherein the lead frame has a plurality of suspension leads, a projection formed on each of the plurality of suspension leads, and a contact portion formed in the point contacting with the upper molding die, with one end portion of each of the plurality of suspension leads connecting to the die pad, and the contact portion being formed with a same thickness as the projection, and
wherein the step (e) includes cutting between the projection and the contact portion with the dicer to divide the plurality of resin sealing members into individual pieces.
24. A method of manufacturing a semiconductor device according to claim 23 , wherein a member for constituting the lead frame is subjected to half-etching at portions other than parts corresponding to the projection and the contact portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/344,094 US20060125064A1 (en) | 2002-12-26 | 2006-02-01 | Semiconductor device and a method of manufacturing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2002378625A JP2004214233A (en) | 2002-12-26 | 2002-12-26 | Semiconductor device and manufacturing method therefor |
JP2002-378625 | 2002-12-26 | ||
US10/729,950 US7019388B2 (en) | 2002-12-26 | 2003-12-09 | Semiconductor device |
US11/344,094 US20060125064A1 (en) | 2002-12-26 | 2006-02-01 | Semiconductor device and a method of manufacturing the same |
Related Parent Applications (1)
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US10/729,950 Division US7019388B2 (en) | 2002-12-26 | 2003-12-09 | Semiconductor device |
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US11/344,094 Abandoned US20060125064A1 (en) | 2002-12-26 | 2006-02-01 | Semiconductor device and a method of manufacturing the same |
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JP (1) | JP2004214233A (en) |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060240600A1 (en) * | 2001-12-14 | 2006-10-26 | Fujio Ito | Semiconductor device and method of manufacturing the same |
US7507606B2 (en) * | 2001-12-14 | 2009-03-24 | Renesas Technology Corp. | Semiconductor device and method of manufacturing the same |
US20080303123A1 (en) * | 2007-06-05 | 2008-12-11 | Zigmund Ramirez Camacho | Integrated circuit package system with leadfinger |
US8148825B2 (en) * | 2007-06-05 | 2012-04-03 | Stats Chippac Ltd. | Integrated circuit package system with leadfinger |
US8476113B2 (en) | 2010-07-06 | 2013-07-02 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US20130299956A1 (en) * | 2012-05-10 | 2013-11-14 | Renesas Electronics Corporation | Semiconductor device manufacturing method and semiconductor device |
US9269671B2 (en) * | 2012-05-10 | 2016-02-23 | Renesas Electronics Corporation | Semiconductor device manufacturing method and semiconductor device |
TWI584422B (en) * | 2012-05-10 | 2017-05-21 | 瑞薩電子股份有限公司 | Semiconductor device manufacturing method and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TWI337403B (en) | 2011-02-11 |
CN1512574A (en) | 2004-07-14 |
JP2004214233A (en) | 2004-07-29 |
CN100517682C (en) | 2009-07-22 |
US20040124506A1 (en) | 2004-07-01 |
TW200414480A (en) | 2004-08-01 |
US7019388B2 (en) | 2006-03-28 |
KR20040057928A (en) | 2004-07-02 |
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