US20060121707A1 - Ion implantation system and method of monitoring implant energy of an ion implantation device - Google Patents

Ion implantation system and method of monitoring implant energy of an ion implantation device Download PDF

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Publication number
US20060121707A1
US20060121707A1 US11/137,333 US13733305A US2006121707A1 US 20060121707 A1 US20060121707 A1 US 20060121707A1 US 13733305 A US13733305 A US 13733305A US 2006121707 A1 US2006121707 A1 US 2006121707A1
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ion implantation
charged particles
frequency shift
electromagnetic wave
energy
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US11/137,333
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Szetsen Lee
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Chung Yuan Christian University
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Chung Yuan Christian University
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Priority claimed from TW093137761A external-priority patent/TWI254027B/en
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Assigned to CHUNG YUAN CHRISTIAN UNIVERSITY reassignment CHUNG YUAN CHRISTIAN UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, SZETSEN STEVEN
Publication of US20060121707A1 publication Critical patent/US20060121707A1/en
Priority to US12/193,319 priority Critical patent/US7663126B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane

Definitions

  • the present invention relates to an ion implantation system, and more particularly, to a system of monitoring implant energy of an ion implantation device and method thereof.
  • dopants are often applied to a semiconductor wafer to control a number of charged carriers and form a conductive area, using doping methods such as liquid deposition, thermal diffusion, or chemical evaporation. Ion implantation is used more widely due to its high precision.
  • dopant atoms or molecules are first ionized, such as P + or BF 2 + .
  • Ions are accelerated by an accelerator to acquire a certain kinetic energy and then implanted into a semiconductor wafer.
  • the depth distribution of the implanted ions is obtained by precisely controlling the output energy of the ion implantation device, with the dosage controlled by implantation time and current.
  • Ion implantation provides uniform distribution, purity of dopants, and precise implantation areas with proper masks.
  • an ion beam comprises a plurality of ions of the same type and energy in a normal distribution.
  • Output energy of an ion implantation process is typically controlled to 50 to 200 KeV.
  • Depth distribution of the implanted ions in the resulting doped region varies with output energy of the ion implantation device. Due to inaccuracy, the real output energy, equal to the kinetic energy of the ions, is often different from the desired output energy of the ion implantation device. Thus, it is necessary to calibrate the ion implantation device for improved precision.
  • Ion implantation device calibration is typically performed by destructive procedures, with a test target, such as a silicon wafer, implanted with ions of predetermined output energy. Thereafter, the test target is cut and ion implantation conditions assessed by electron microscope, a complex and time-consuming procedure. Consequently, calibration cannot be performed frequently, and can be only performed for specific output energy levels, further limiting accuracy. Inaccuracy remains at about 200 eV after conventional calibration.
  • Embodiments of an ion implantation system comprise an ion implantation device generating a plurality of charged particles and accelerating the charged particles with an accelerating voltage to generate implant energy required ion implantation.
  • the ion implantation system further comprises a monitor system performing spectroscopy analysis to obtain a velocity profile of the charged particles.
  • the monitor system can calibrate the implantation energy of the ion implantation device according to the velocity profile of the charged particles.
  • An ion implantation device is provided, generating at least one charged particle and accelerating the charged particle with an accelerating voltage to generate ion implantation energy necessary for ion implantation.
  • Spectroscopy analysis of the accelerated charged particle obtains a frequency shift.
  • the ion implantation energy of the ion implantation device is then calibrated according to the frequency shift.
  • FIG. 1 is a schematic diagram of an embodiment of an ion implantation system of the invention.
  • FIG. 1 is a schematic diagram of an embodiment of an ion implantation system 100 of the invention.
  • the ion implantation system 100 comprises an ion implantation device 200 and a monitoring device 300 .
  • the ion implantation device 200 generates a plurality of charged particles 250 , such as P + or BF 2 + .
  • the ion implantation device also comprises an accelerator to accelerate the charged particles 250 with an accelerating voltage to generate implant energy necessary for ion implantation.
  • the semiconductor substrate is mounted on support 210 , electrically connected to a direct current (DC) power supply 230 .
  • the ion implantation device 200 generates a plasma environment 240 for plasma immersion ion implantation.
  • the monitor device 300 comprises a spectrometer 310 and a database 320 .
  • the spectrometer 310 generates an electromagnetic wave of a known frequency, such as infrared rays, toward the charged particles 250 and detects the frequency after the electromagnetic wave undergoes the Doppler effect, to obtain a frequency shift.
  • the database stores a correct relationship between the frequency shift and the accelerating voltage. Thus, if the frequency shift is obtained, the real accelerating voltage can be calculated by the database 300 and the ion implantation energy of the ion implantation device 200 can be calibrated.
  • the ratio between the frequency shift ( ⁇ ) and the frequency ( ⁇ ) of the electromagnetic wave equals the ratio between the velocity of the charged particle 250 and that of the electromagnetic wave (c).
  • the velocity of the charged particle equals the mobility constant (K) times the electric field ( ⁇ ), which is the same as the ratio between the accelerating voltage (V) and the acceleration distance (d).
  • the electromagnetic wave comprises infrared rays with a frequency of 2700 cm ⁇ 1
  • a velocity of the electromagnetic wave equals the velocity of light
  • the acceleration distance is 10 cm.
  • the frequency shift ( ⁇ ) is measured at 0.037 cm ⁇ 1
  • the real acceleration voltage is 1000V.
  • the ion implantation system 100 if the type of charged particles is not changed, the frequency and velocity of the electromagnetic wave, the mobile constant of the charged particles, and the acceleration distance remain constant.
  • experimental data can be used to build up a database comprising a correct relationship among frequency shift, velocity of the charged particle, and accelerating voltage.
  • the database can further comprise a relationship among implant depth, frequency shift, velocity of the charged particle, and accelerating voltage.
  • the real velocity of the charged particles and the real acceleration voltage can be obtained by measuring the frequency shift.
  • the ion implantation device 200 can be calibrated according to the obtained result to reduce inaccuracy of the ion implantation energy of the ion implantation process and improve the precision of the implant depth of the ion implantation process.
  • the invention provides non-intrusive monitoring of implant depth on a wafer. Since the real acceleration can be obtained in a relatively short time, a quick and precise ion implantation calibration can be made, leading to improved accuracy in controlling the implant depth.
  • the invention further comprises real-time monitoring to precisely control the ion implant energy and the implant depth of ion implantation process to improve reliability of subsequent processes or applications.

Abstract

An ion implantation system and method of monitoring implant energy of an ion implantation device. The ion implantation system includes an ion implantation device and a monitoring device. The ion implantation device generates a plurality of charged particles and accelerates them with an accelerating voltage for ion implantation. The monitoring device performs spectroscopic analysis of the charged particles to obtain the real accelerating voltage. Thus, implant energy output by the ion implantation device can be calibrated.

Description

    BACKGROUND
  • The present invention relates to an ion implantation system, and more particularly, to a system of monitoring implant energy of an ion implantation device and method thereof.
  • In semiconductor fabrication, dopants are often applied to a semiconductor wafer to control a number of charged carriers and form a conductive area, using doping methods such as liquid deposition, thermal diffusion, or chemical evaporation. Ion implantation is used more widely due to its high precision.
  • During ion implantation, dopant atoms or molecules are first ionized, such as P+ or BF2 +. Ions are accelerated by an accelerator to acquire a certain kinetic energy and then implanted into a semiconductor wafer. The depth distribution of the implanted ions is obtained by precisely controlling the output energy of the ion implantation device, with the dosage controlled by implantation time and current. Ion implantation provides uniform distribution, purity of dopants, and precise implantation areas with proper masks.
  • Typically, an ion beam comprises a plurality of ions of the same type and energy in a normal distribution. Output energy of an ion implantation process is typically controlled to 50 to 200 KeV. Depth distribution of the implanted ions in the resulting doped region varies with output energy of the ion implantation device. Due to inaccuracy, the real output energy, equal to the kinetic energy of the ions, is often different from the desired output energy of the ion implantation device. Thus, it is necessary to calibrate the ion implantation device for improved precision.
  • Ion implantation device calibration is typically performed by destructive procedures, with a test target, such as a silicon wafer, implanted with ions of predetermined output energy. Thereafter, the test target is cut and ion implantation conditions assessed by electron microscope, a complex and time-consuming procedure. Consequently, calibration cannot be performed frequently, and can be only performed for specific output energy levels, further limiting accuracy. Inaccuracy remains at about 200 eV after conventional calibration.
  • As semiconductor device dimensions decrease and integration increases, required doped regions move closer and closer to the surface of the semiconductor wafer, with ion implantation energy reducing accordingly, as low as 2 KeV. Despite implant energy decreasing significantly, inaccuracy of output energy from implantation device remains about 200 eV, an unacceptable level.
    • SUMMARY
  • Embodiments of an ion implantation system comprise an ion implantation device generating a plurality of charged particles and accelerating the charged particles with an accelerating voltage to generate implant energy required ion implantation. The ion implantation system further comprises a monitor system performing spectroscopy analysis to obtain a velocity profile of the charged particles. The monitor system can calibrate the implantation energy of the ion implantation device according to the velocity profile of the charged particles.
  • Also provided is a method of monitoring implantation energy of an ion implantation device. An ion implantation device is provided, generating at least one charged particle and accelerating the charged particle with an accelerating voltage to generate ion implantation energy necessary for ion implantation. Spectroscopy analysis of the accelerated charged particle obtains a frequency shift. The ion implantation energy of the ion implantation device is then calibrated according to the frequency shift.
    • DESCRIPTION OF THE DRAWINGS
  • Embodiments of the invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
  • FIG. 1 is a schematic diagram of an embodiment of an ion implantation system of the invention.
    • DETAILED DESCRIPTION
  • FIG. 1 is a schematic diagram of an embodiment of an ion implantation system 100 of the invention. As shown, the ion implantation system 100 comprises an ion implantation device 200 and a monitoring device 300. The ion implantation device 200 generates a plurality of charged particles 250, such as P+ or BF2 +. The ion implantation device also comprises an accelerator to accelerate the charged particles 250 with an accelerating voltage to generate implant energy necessary for ion implantation. In an embodiment of the invention, the semiconductor substrate is mounted on support 210, electrically connected to a direct current (DC) power supply 230. The ion implantation device 200 generates a plasma environment 240 for plasma immersion ion implantation.
  • The monitor device 300 comprises a spectrometer 310 and a database 320. The spectrometer 310 generates an electromagnetic wave of a known frequency, such as infrared rays, toward the charged particles 250 and detects the frequency after the electromagnetic wave undergoes the Doppler effect, to obtain a frequency shift. The database stores a correct relationship between the frequency shift and the accelerating voltage. Thus, if the frequency shift is obtained, the real accelerating voltage can be calculated by the database 300 and the ion implantation energy of the ion implantation device 200 can be calibrated.
  • A method of populating database 320 is described in the following. First, in the equation: Δ ⁢   ⁢ v v = V d c = K ⁢   ⁢ ɛ c = KV cd
  • υ is a frequency of the electromagnetic wave; Δυ is the frequency shift; Vd is the velocity of the charged particle; K is a mobility constant of the charged particle; ε is the electric field; c is the velocity of the electromagnetic wave; V is the accelerating voltage; and d is the acceleration distance. According to the Doppler effect, the ratio between the frequency shift (Δυ) and the frequency (υ) of the electromagnetic wave equals the ratio between the velocity of the charged particle 250 and that of the electromagnetic wave (c). The velocity of the charged particle equals the mobility constant (K) times the electric field (ε), which is the same as the ratio between the accelerating voltage (V) and the acceleration distance (d). For example, if H3 + particles having a mobile constant of 4.18*103 cm2/Vs are utilized in an ion implantation, and the electromagnetic wave comprises infrared rays with a frequency of 2700 cm−1, a velocity of the electromagnetic wave equals the velocity of light, and the acceleration distance is 10 cm. If the frequency shift (Δυ) is measured at 0.037 cm−1, the real acceleration voltage is 1000V. Thus, the ion implantation energy can be calibrated according to the obtained real accelerating energy.
  • In the ion implantation system 100, if the type of charged particles is not changed, the frequency and velocity of the electromagnetic wave, the mobile constant of the charged particles, and the acceleration distance remain constant. Thus, after the ion implantation device is calibrated precisely once, experimental data can be used to build up a database comprising a correct relationship among frequency shift, velocity of the charged particle, and accelerating voltage. In an embodiment, by utilizing the destructive examination, the database can further comprise a relationship among implant depth, frequency shift, velocity of the charged particle, and accelerating voltage.
  • In other words, before the ion implantation process, the real velocity of the charged particles and the real acceleration voltage can be obtained by measuring the frequency shift. The ion implantation device 200 can be calibrated according to the obtained result to reduce inaccuracy of the ion implantation energy of the ion implantation process and improve the precision of the implant depth of the ion implantation process.
  • In comparison with the conventional ion implantation system and monitoring method, the invention provides non-intrusive monitoring of implant depth on a wafer. Since the real acceleration can be obtained in a relatively short time, a quick and precise ion implantation calibration can be made, leading to improved accuracy in controlling the implant depth. In addition, the invention further comprises real-time monitoring to precisely control the ion implant energy and the implant depth of ion implantation process to improve reliability of subsequent processes or applications.
  • While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto.

Claims (10)

1. An ion implantation system, comprising:
an ion implantation device generating a plurality of charged particles and accelerating the charged particles with a accelerating voltage, generating implant energy necessary for ion implantation; and
a monitor system performing spectroscopy analysis to obtain a velocity profile of the charged particles;
wherein the monitor device calibrates the implantation energy of the ion implantation device according to the velocity profile of the charged particles.
2. The ion implantation system as claimed in claim 1 wherein the monitor device comprises a database, comprising a correct relationship between the velocity profile of the charged particles and the accelerating voltage for calibrating the implant energy of the ion implantation device according to the velocity profile of the charged particles.
3. The ion implantation system as claimed in claim 1 wherein the monitoring device generates an electromagnetic wave to the charged particles, the electromagnetic wave having a frequency shift after generation, the monitor device obtaining the velocity profile of the charged particles by measuring the frequency shift.
4. The ion implantation system as claimed in claim 1 wherein the electromagnetic wave comprises infrared rays.
5. The ion implantation system as claimed in claim 1 wherein the ion implantation device generates an plasma environment for ion immersion ion implantation.
6. A method of monitoring implantation energy of an ion implantation device, comprising:
providing an ion implantation device, generating at least one charged particle and accelerating the charged particle with an accelerating voltage to generate ion implant energy necessary for ion implantation;
performing spectroscopy analysis of the accelerated charged particle to obtain a frequency shift; and
calibrating the ion implantation energy of the ion implantation device according to the frequency shift.
7. The method as claimed in claim 6 wherein the spectroscopy analysis comprises:
generating an electromagnetic wave with a known frequency to the accelerated charged particle, the electromagnetic wave having a frequency shift caused by the velocity of the charged particle; and
measuring the frequency of the electromagnetic wave to obtain the frequency shift.
8. The method as claimed in claim 6 wherein the electromagnetic wave comprises infrared rays.
9. The method as claimed in claim 6 wherein calibration of the ion implant energy of the ion implantation device comprises:
providing a database comprising a correct relationship between the frequency shift and the accelerating voltage;
calculating a real accelerating voltage of the ion implantation device according to the database and the obtained frequency shift; and
calibrating the ion implantation energy of the ion implantation system according to the real accelerating voltage.
10. The method as claimed in claim 6 wherein the ion implantation device generates plasma environment for ion immersion ion implantation.
US11/137,333 2004-12-07 2005-05-26 Ion implantation system and method of monitoring implant energy of an ion implantation device Abandoned US20060121707A1 (en)

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TW093137761A TWI254027B (en) 2004-12-07 2004-12-07 Micro device and manufacturing method thereof
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TW094105393A TWI268558B (en) 2005-02-23 2005-02-23 Ion implantation system and method of monitoring implanting voltage of ion implantation device
TW94105393 2005-02-23

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080248597A1 (en) * 2007-04-06 2008-10-09 Micron Technology, Inc. Methods for determining a dose of an impurity implanted in a semiconductor substrate and an apparatus for same
US20080296484A1 (en) * 2005-02-23 2008-12-04 Szetsen Steven Lee Ion implantation system and method of monitoring implant energy of an ion implantation device
WO2023022793A1 (en) * 2021-08-20 2023-02-23 Applied Materials, Inc. Fast beam calibration procedure for beamline ion implanter

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TWI402898B (en) * 2009-09-03 2013-07-21 Atomic Energy Council Solar cell defect passivation method
CN108496238B (en) * 2016-02-05 2020-05-19 株式会社日立高新技术 Field ionization ion source, ion beam apparatus, and beam irradiation method

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US20080296484A1 (en) * 2005-02-23 2008-12-04 Szetsen Steven Lee Ion implantation system and method of monitoring implant energy of an ion implantation device
US7663126B2 (en) * 2005-02-23 2010-02-16 Chung Yuan Christian University Ion implantation system and method of monitoring implant energy of an ion implantation device
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WO2023022793A1 (en) * 2021-08-20 2023-02-23 Applied Materials, Inc. Fast beam calibration procedure for beamline ion implanter

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US20080296484A1 (en) 2008-12-04
TWI268558B (en) 2006-12-11
US7663126B2 (en) 2010-02-16
TW200631105A (en) 2006-09-01

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