US20060061965A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US20060061965A1
US20060061965A1 US11/271,471 US27147105A US2006061965A1 US 20060061965 A1 US20060061965 A1 US 20060061965A1 US 27147105 A US27147105 A US 27147105A US 2006061965 A1 US2006061965 A1 US 2006061965A1
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United States
Prior art keywords
heat spreader
substrate
spreader
heat
semiconductor die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/271,471
Inventor
Vivek Jairazbhoy
Prathap Reddy
John Trublowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Visteon Global Technologies Inc
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Visteon Global Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Visteon Global Technologies Inc filed Critical Visteon Global Technologies Inc
Priority to US11/271,471 priority Critical patent/US20060061965A1/en
Publication of US20060061965A1 publication Critical patent/US20060061965A1/en
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT SECURITY AGREEMENT Assignors: VISTEON GLOBAL TECHNOLOGIES, INC.
Assigned to JPMORGAN CHASE BANK reassignment JPMORGAN CHASE BANK SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: VISTEON GLOBAL TECHNOLOGIES, INC.
Assigned to WILMINGTON TRUST FSB, AS ADMINISTRATIVE AGENT reassignment WILMINGTON TRUST FSB, AS ADMINISTRATIVE AGENT ASSIGNMENT OF SECURITY INTEREST IN PATENTS Assignors: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Assigned to VISTEON GLOBAL TECHNOLOGIES, INC. reassignment VISTEON GLOBAL TECHNOLOGIES, INC. RELEASE BY SECURED PARTY AGAINST SECURITY INTEREST IN PATENTS RECORDED AT REEL 022575 FRAME 0186 Assignors: WILMINGTON TRUST FSB, AS ADMINISTRATIVE AGENT
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention generally relates to a system for dissipating heat from a power module. More specifically, the invention relates to a system including a liquid cooled thermal stack for dissipating heat from a power module.
  • the power module 10 includes a die 12 , a DBC substrate 14 , a heat spreader 20 , and water 30 for cooling.
  • the die 12 is attached to the DBC substrate 14 by a solder layer 16 .
  • a wire bond 26 attaches the die 12 to a bond pad 28 on the DBC substrate 14 .
  • the DBC substrate includes three layers, a top copper layer 15 , followed by a middle aluminum nitride layer 17 , and a bottom, third copper layer 19 .
  • the DBC substrate 14 provides a solderable, dielectric substrate for the die 12 .
  • the aluminum nitride layer 17 is dielectric with a coefficient of thermal expansion (CTE) closely matched to the silicon of the die 12 .
  • CTE coefficient of thermal expansion
  • the DBC substrate 14 is attached to the heat spreader 20 by the solder layer 18 .
  • the heat spreader 20 is attached to a layer of thermal grease 22 to a cold plate 24 .
  • Fluid 30 is directed to flow across the copper plate 24 to transport the heat away from the power module 10 , the fluid 30 is directed by a channel 32 defined by a first wall 34 and a second wall 36 .
  • An aperture 35 is formed in the first wall 34 of the channel 32 and the cold plate 24 is attached to the first wall 34 over the aperture 35 .
  • the first wall 34 allows the water 30 to directly contact the cold plate 24 and dissipate heat.
  • a gasket 38 is provided between the first wall 34 and the cold plate 24 .
  • the DBC substrate 14 is not optimized for sinking heat from the die and may not provide optimal reliability.
  • the solder and thermal grease interfaces 18 and 22 may increase the thermal resistance of the thermal stack.
  • stress due to thermal expansion mismatch of the copper with die 12 will be concentrated at the solder interfaces, which may result in failures in the solder.
  • the advantage in using the DBC substrate includes using the substrate to support the electronic circuit since it has dielectric properties. Disadvantages of DBC include cost, low thermal conductivity, and difficulty of manufacturability.
  • the present invention provides a system for dissipating heat from a semiconductor device.
  • the system generally includes a semiconductor die, a heat spreader, a wetting material, a sealant, a substrate, and a base.
  • the semiconductor die produces heat in normal operation.
  • the semiconductor die is attached to a first side of the heat spreader.
  • the wetting material which may be a liquefiable solder, is used to provide a thermal connection between the die and heat spreader.
  • the sealant provides a mechanical connection between the die and heat spreader, in addition to encapsulating the wetting material.
  • the heat spreader is further attached to a substrate configured for fixing the location of the heat spreader. A second side of the heat spreader is exposed from the substrate and configured to allow cooling fluid to flow thereacross transferring heat away from the heat spreader.
  • the substrate includes a plastic material and the heat spreader is insert molded into the plastic material for ease of manufacture.
  • the heat spreader can also include copper to facilitate heat transfer.
  • the cooling fluid may be a dielectric fluid.
  • the heat spreader may include a ceramic dielectric coating sputtered on the second side of the heat spreader allowing an electrolizable fluid such as water to be used.
  • the fluid is directed to flow across the second side of the heat spreader by a channel.
  • the channel is configured to contain the fluid and may include a seal or gasket located between the channel and the substrate.
  • FIG. 1 is a sectional view of a power module used in high power electronic applications according to the prior art.
  • FIG. 2 is a sectional view of a power module for high power electronic applications according to the present invention.
  • the system 50 includes as its principal components a semiconductor die 52 , wetting material 56 , sealant 58 , a heat spreader 54 , a fluid 66 and a base 68 .
  • the die 52 is attached to a copper heat spreader 54 without an intermediate dielectric layer. Attachment is made by means of a stress relieving interconnect comprising a wetting material 56 and sealant 58 .
  • the wetting material 56 is a phase changing solder that provides an electrical connection between the die 52 and the heat spreader 54 , that softens or liquefies during the thermal cycle thus relieving accumulated stress.
  • the sealant 58 which may include an encapsulant adhesive material and has suitable strength and thermal expansion properties to confine the electrical interconnect material and provide mechanical attachment between the die 52 and the heat spreader 54 .
  • the heat spreader 54 is fixed in place by the substrate 64 .
  • a wire bond 60 attaches the die 52 to a bond pad 62 on the DBC substrate.
  • a side of the heat spreader 54 is exposed through an aperture in the substrate 64 allowing cooling fluid 66 to flow across the heat spreader 54 and transport heat away from the power module 50 .
  • the fluid 66 may be a dielectric fluid to prevent shorts.
  • a dielectric coating 76 may be applied to the exposed side of the heat spreader 54 , providing electrical insulation between the heat spreader 54 and the fluid 66 .
  • the coating 76 may be a ceramic coating that is sputtered on the exposed side of the heat spreader. Use of the dielectric coating 76 allows an electrolizable fluid to be used for cooling the heat spreader 54 , including water.
  • a base 68 with a first wall 70 and a second wall 72 forms a channel provided for directing the flow of a cooling fluid 66 .
  • the first wall 70 includes an aperture 73 where the substrate 64 is attached, thererby allowing the fluid 66 to directly contact the heat spreader 54 .
  • the heat spreader 54 is exposed from a face of substrate 64 to the coolant path of the cooling fluid 66 .
  • the dielectric substrate 64 can be plastic allowing the heat spreaders to be insert molded at the desired locations, with one surface exposed for die attach, and another surface exposed to the coolant path.
  • the gasket 74 seals the fluid 66 in the base 68 .
  • the substrate 64 can form a portion of the channel that transports the fluid 66 .

Abstract

A liquid cooled semiconductor device is provided. The device includes a semiconductor die and a heat spreader. In one aspect of the invention, the heat spreader is mounted to a substrate such that a first side of the spreader is exposed on one side of the substrate and that a second side of the heat spreader is exposed on an opposing side of the substrate. Attached to a first side of the spreader is the semiconductor die. In another aspect of the invention, a wetting material is used to provide a thermal/electrical connection between the die and heat spreader. Sealant is provided between the die and the heat spreader to encapsulate and contain the wetting material.

Description

    RELATED APPLICATION
  • This application is a continuation of U.S. application Ser. No. 10/685,979, filed Oct. 15, 2003, the entire contents of which are herein incorporated by reference.
    • BACKGROUND
  • 1. Field of the Invention
  • The present invention generally relates to a system for dissipating heat from a power module. More specifically, the invention relates to a system including a liquid cooled thermal stack for dissipating heat from a power module.
  • 2. Description of Related Art
  • In high power electronic applications, such as electrical vehicle applications, a significant amount of heat is generated in a semiconductor device that controls the switching of power. The heat adversely affects the performance and reliability of the device by causing the device to overheat. When the device overheats, the junction temperature rises to a level where the device can fail to function. In addition, the devices and interconnects may also fail due to thermal expansion effects causing solder joint cracking. Therefore, it is advantageous to maximize in the device the capability to dissipate heat and to minimize the effects of thermal expansion.
  • One approach, as seen in FIG. 1, has been to use a direct bond copper (DBC) substrate. One example is illustrated by power module 10. The power module 10 includes a die 12, a DBC substrate 14, a heat spreader 20, and water 30 for cooling. The die 12 is attached to the DBC substrate 14 by a solder layer 16. A wire bond 26 attaches the die 12 to a bond pad 28 on the DBC substrate 14. The DBC substrate includes three layers, a top copper layer 15, followed by a middle aluminum nitride layer 17, and a bottom, third copper layer 19. Provided as such, the DBC substrate 14 provides a solderable, dielectric substrate for the die 12. In addition, the aluminum nitride layer 17 is dielectric with a coefficient of thermal expansion (CTE) closely matched to the silicon of the die 12.
  • The DBC substrate 14 is attached to the heat spreader 20 by the solder layer 18. Made of copper, the heat spreader 20 is attached to a layer of thermal grease 22 to a cold plate 24.
  • Fluid 30 is directed to flow across the copper plate 24 to transport the heat away from the power module 10, the fluid 30 is directed by a channel 32 defined by a first wall 34 and a second wall 36. An aperture 35 is formed in the first wall 34 of the channel 32 and the cold plate 24 is attached to the first wall 34 over the aperture 35. Provided with the aperture 35, the first wall 34 allows the water 30 to directly contact the cold plate 24 and dissipate heat. To seal the water 30 in the channel 32 a gasket 38 is provided between the first wall 34 and the cold plate 24.
  • Unfortunately, the DBC substrate 14 is not optimized for sinking heat from the die and may not provide optimal reliability. For example, the solder and thermal grease interfaces 18 and 22 may increase the thermal resistance of the thermal stack. In addition, stress due to thermal expansion mismatch of the copper with die 12 will be concentrated at the solder interfaces, which may result in failures in the solder. The advantage in using the DBC substrate includes using the substrate to support the electronic circuit since it has dielectric properties. Disadvantages of DBC include cost, low thermal conductivity, and difficulty of manufacturability.
  • In view of the above, it is apparent that there exists a need for an improved system for providing thermal dissipation of heat from semiconductor dies in high power electronic applications.
    • SUMMARY
  • In satisfying the above need, as well as overcoming the enumerated drawbacks and other limitations of the related art, the present invention provides a system for dissipating heat from a semiconductor device. The system generally includes a semiconductor die, a heat spreader, a wetting material, a sealant, a substrate, and a base.
  • As is typical thereof, the semiconductor die produces heat in normal operation. To dissipate this heat, the semiconductor die is attached to a first side of the heat spreader. The wetting material, which may be a liquefiable solder, is used to provide a thermal connection between the die and heat spreader. The sealant provides a mechanical connection between the die and heat spreader, in addition to encapsulating the wetting material. The heat spreader is further attached to a substrate configured for fixing the location of the heat spreader. A second side of the heat spreader is exposed from the substrate and configured to allow cooling fluid to flow thereacross transferring heat away from the heat spreader.
  • In other aspects, the substrate includes a plastic material and the heat spreader is insert molded into the plastic material for ease of manufacture. The heat spreader can also include copper to facilitate heat transfer. To prevent electrical shorting, the cooling fluid may be a dielectric fluid. Alternatively, the heat spreader may include a ceramic dielectric coating sputtered on the second side of the heat spreader allowing an electrolizable fluid such as water to be used. The fluid is directed to flow across the second side of the heat spreader by a channel. The channel is configured to contain the fluid and may include a seal or gasket located between the channel and the substrate.
  • Further objects, features and advantages of this invention will become readily apparent to persons skilled in the art after a review of the following description, with reference to the drawings and claims that are appended to and form a part of this specification.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a sectional view of a power module used in high power electronic applications according to the prior art; and
  • FIG. 2 is a sectional view of a power module for high power electronic applications according to the present invention.
    • DETAILED DESCRIPTION
  • Now referring to FIG. 2, a system embodying the principles of the present invention is illustrated therein and generally designated at 50. The system 50 includes as its principal components a semiconductor die 52, wetting material 56, sealant 58, a heat spreader 54, a fluid 66 and a base 68.
  • The die 52 is attached to a copper heat spreader 54 without an intermediate dielectric layer. Attachment is made by means of a stress relieving interconnect comprising a wetting material 56 and sealant 58. The wetting material 56 is a phase changing solder that provides an electrical connection between the die 52 and the heat spreader 54, that softens or liquefies during the thermal cycle thus relieving accumulated stress. The sealant 58, which may include an encapsulant adhesive material and has suitable strength and thermal expansion properties to confine the electrical interconnect material and provide mechanical attachment between the die 52 and the heat spreader 54. The heat spreader 54 is fixed in place by the substrate 64. A wire bond 60 attaches the die 52 to a bond pad 62 on the DBC substrate.
  • A side of the heat spreader 54 is exposed through an aperture in the substrate 64 allowing cooling fluid 66 to flow across the heat spreader 54 and transport heat away from the power module 50. Due to the continuous electrical connection between the die 52 and the heat spreader 54, the fluid 66 may be a dielectric fluid to prevent shorts. Alternatively, a dielectric coating 76 may be applied to the exposed side of the heat spreader 54, providing electrical insulation between the heat spreader 54 and the fluid 66. The coating 76 may be a ceramic coating that is sputtered on the exposed side of the heat spreader. Use of the dielectric coating 76 allows an electrolizable fluid to be used for cooling the heat spreader 54, including water.
  • A base 68 with a first wall 70 and a second wall 72 forms a channel provided for directing the flow of a cooling fluid 66. The first wall 70 includes an aperture 73 where the substrate 64 is attached, thererby allowing the fluid 66 to directly contact the heat spreader 54. The heat spreader 54 is exposed from a face of substrate 64 to the coolant path of the cooling fluid 66.
  • Alternatively, the dielectric substrate 64 can be plastic allowing the heat spreaders to be insert molded at the desired locations, with one surface exposed for die attach, and another surface exposed to the coolant path. Provided between the first wall 70 and the substrate 64, the gasket 74 seals the fluid 66 in the base 68. Further, the substrate 64 can form a portion of the channel that transports the fluid 66.
  • As a person skilled in the art will readily appreciate, the above description is meant as an illustration of implementation of the principles this invention. This description is not intended to limit the scope or application of this invention in that the invention is susceptible to modification, variation and change, without departing from spirit of this invention, as defined in the following claims.

Claims (13)

1. A semiconductor device comprising:
a semiconductor die;
a heat spreader having a first side and a second side, the first side being attached to the semiconductor die;
a wetting material providing a thermal connection between the semiconductor die with the heat spreader; and
a sealant extending between the semiconductor die and the heat spreader and encapsulating the wetting material.
2. The device according to claim 1, wherein the wetting material is a liquefiable solder.
3. The device according to claim 1, wherein the heat spreader is constructed primarily of copper.
4. The device according to claim 1, wherein the heat spreader includes a dielectric coating on the second side of the heat spreader.
5. The device according to claim 4, wherein the coating is a ceramic coating.
6. The device according to claim 1, further comprising a substrate to which the spreader is mounted, the spreader being mounted to the substrate such that at least part of the second side of the heat spreader is exposed from the substrate.
7. A semiconductor device comprising:
a semiconductor die;
a heat spreader having a first and a second side, the first side being attached to the semiconductor die; and
a substrate for fixing the location of the heat spreader, the heat spreader being mounted to the substrate such that at least a portion of the second side of the heat spreader is exposed through the substrate.
8. The system according to claim 7, wherein the substrate comprises a plastic material.
9. The system according to claim 8, wherein the heat spreader is insert molded into the substrate such that the second side of the heat spreader is exposed from the substrate.
10. The system according to claim 7, wherein the heat spreader is a copper heat spreader.
11. The system according to claim 7, wherein the heat spreader includes a dielectric coating on the second side of the heat spreader.
12. The system according to claim 11, wherein the coating is a ceramic coating.
13. The system according to claim 7, further comprising a base including wall portions defining a channel adapted to having cooling fluid flow through the channel, part of the wall portions defining an aperture and the substrate being mounted over the aperture such that the second side of the heat spreader will be contacted by a flow of the cooling fluid through the channel.
US11/271,471 2003-10-15 2005-11-10 Semiconductor device Abandoned US20060061965A1 (en)

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Application Number Priority Date Filing Date Title
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Applications Claiming Priority (2)

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US10/685,979 US6992887B2 (en) 2003-10-15 2003-10-15 Liquid cooled semiconductor device
US11/271,471 US20060061965A1 (en) 2003-10-15 2005-11-10 Semiconductor device

Related Parent Applications (1)

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