US20060050351A1 - Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device - Google Patents

Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device Download PDF

Info

Publication number
US20060050351A1
US20060050351A1 US11/217,464 US21746405A US2006050351A1 US 20060050351 A1 US20060050351 A1 US 20060050351A1 US 21746405 A US21746405 A US 21746405A US 2006050351 A1 US2006050351 A1 US 2006050351A1
Authority
US
United States
Prior art keywords
liquid immersion
medium fluid
immersion medium
cleaning
tool according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/217,464
Inventor
Tatsuhiko Higashiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIGASHIKI, TATSUHIKO
Publication of US20060050351A1 publication Critical patent/US20060050351A1/en
Priority to US11/504,053 priority Critical patent/US20070039637A1/en
Priority to US12/510,009 priority patent/US8174669B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0006Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Definitions

  • the present invention relates to a liquid immersion optical tool, a method for cleaning the liquid immersion optical tool, and a method for manufacturing a semiconductor device, wherein a liquid immersion medium fluid layer is provided between an optical lens system and an object, improving an optical performance.
  • a liquid immersion microscope or a liquid immersion exposure tool and the like is used as a liquid immersion optical tool for immersing liquid immersion medium fluid between an object and an optical lens system, thereby improving a resolution and a depth of focus.
  • a liquid immersion medium liquid such as oil or water is provided between an objective lens of the microscope and an object, thereby improving a resolution and a depth of focus.
  • a liquid immersion exposure tool for use in a semiconductor lithography process a liquid immersion medium fluid is provided between a lens and a wafer, thereby making it possible to increase NA (Numerical Aperture) and to increase a depth of focus.
  • This exposure tool is expected to be a main exposure tool in manufacturing a semiconductor device in a generation following a 65 nm half pitch generation (WO 99/49504).
  • the lens of the liquid immersion optical tool is in contact with liquid immersion medium fluid for a long time when the liquid immersion optical tool is used.
  • substances generated from the tool, the object surface, and a structure for guiding the liquid immersion medium fluid react with each other to adhere to the lens so that the lens surface is clouded.
  • This clouding of the lens surface is problematic because it degrades the resolution and the luminescence.
  • portions having been contacted with the liquid immersion medium fluid include a liquid immersion head, an object stage, and a liquid immersion medium fluid supply and discharge device.
  • a liquid immersion optical tool comprising:
  • a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object;
  • a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
  • a cleaning method in the liquid immersion optical tool comprising a light source; an optical lens system; a stage which moves an object base on which an object is to be placed; a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object; a fence which limits a region of the layer of liquid immersion medium fluid; and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution,
  • a semiconductor device manufacturing method in which a semiconductor device is manufactured by using a liquid immersion exposure tool, the liquid immersion exposure tool comprising:
  • a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object;
  • a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
  • FIG. 1 is a view showing a configuration of a liquid immersion exposure tool according to a first embodiment of the present invention
  • FIG. 2 is a view showing an example of a cleaning device according to the first embodiment of the present invention
  • FIG. 3 is a view showing another example of the cleaning device according to the first embodiment of the present invention.
  • FIG. 4 is a view showing another example of the cleaning device according to the first embodiment of the present invention.
  • FIG. 5 is a view showing a configuration of a liquid immersion exposure tool according to a second embodiment of the present invention.
  • FIG. 6 is a view showing a configuration of a liquid immersion exposure tool according to a third embodiment of the present invention.
  • FIG. 1 is a view showing an outline configuration of a liquid immersion exposure tool according to a first embodiment of the present invention.
  • a reticle stage 31 is provided under a lighting optical system (light source) 20 .
  • a reticle 32 which is a photo mask is placed on the reticle stage 31 .
  • the reticle stage 31 is movable in parallel to an object base 37 (i.e., in a horizontal direction in the exposure tool).
  • a projection lens system (optical lens system) 33 is provided under the reticle stage 31 .
  • the object base 37 is provided under the projection lens system 33 .
  • a semiconductor substrate 10 is placed on the object base 37 . The heights of the surface of the semiconductor substrate 10 and part of the object base 37 near the semiconductor substrate 10 are almost equal to each other.
  • the object base 37 is movable together with a stage 34 and the semiconductor substrate 10 in the parallel direction and the orthogonal direction to the reticle stage 31 (i.e., horizontal and vertical directions in the exposure tool).
  • the stage 34 can be inclined with respect to the horizontal plane.
  • a fence 35 is mounted at the lower part of the projection lens system 33 .
  • a liquid immersion medium fluid supply and discharge mechanism is provided at the side of the projection lens system 33 .
  • the supply and discharge mechanism comprises a pair of liquid immersion medium fluid supply and discharge devices 36 which supply liquid immersion medium fluid into the fence 35 , and discharge the liquid immersion medium fluid from the fence 35 .
  • a structure of the liquid immersion medium fluid supply and discharge mechanism is not limited to this structure.
  • the pair of liquid immersion medium fluid supply and discharge devices 36 functions as a liquid immersion medium supply device
  • the other liquid immersion medium fluid supply and discharge device functions as a liquid immersion medium discharge device. That is, the pair of liquid immersion medium fluid supply and discharge devices 36 functions complementarily with respect to the supply and discharge of the liquid immersion medium fluid.
  • a space between the substrate 10 and the projection lens system 33 surrounded by the fence 35 is filled with a layer of liquid immersion medium fluid, for example, water, supplied from one of the liquid immersion medium fluid supply and discharge devices 36 .
  • a layer of liquid immersion medium fluid for example, water
  • Light of exposure emitted from a light source 20 reaches the semiconductor substrate 10 placed on the object base 37 via a mask pattern (i.e., a semiconductor element pattern) of the reticle 32 , the projection lens system 33 and the liquid immersion medium fluid layer.
  • a mask pattern i.e., a semiconductor element pattern
  • a structure formed of the fence 35 and the pair of the light immersion medium fluid supply and discharge devices 36 is called a head.
  • a pair of cleaning devices 38 are connected to a pair of the liquid immersion medium fluid supply and discharge devices 36 in order to defog the projection lens system 33 and remove impurities adhered at the time of exposure.
  • the pair of the cleaning devices 38 complementarily supply a cleaning solution into the fence 35 via the pair of the liquid immersion medium fluid supply and discharge devices 36 . After exposure, the cleaning solution is supplied into the fence 35 , whereby parts or portions having been contacted with the liquid immersion medium fluid supplied from the liquid immersion medium fluid supply device 36 are cleaned.
  • a step and scan type exposure tool all of the patterns on a photo mask are not collectively transferred to a resist laminate film. Only a pattern portion of the entire pattern of the photo mask, which is smaller than the entire pattern of the photo mask, is collectively transferred.
  • the pattern portion is a slit shape predetermined area called an exposure field. Exposure is carried out in a state in which the photo mask and the substrate are moved at a rate according to a magnification of the projection optical system, whereby the photo mask and substrate are scanned by light ray to project the entire pattern of the photo mask onto the resist laminate film.
  • the term “exposure field” may mean the predetermined area of the slit shape on the substrate plane which is optically conjugate with the pattern side on the photo mask.
  • a photo mask movement distance is greater than a substrate movement distance.
  • the number of photo mask movements is reduced in order to reduce an exposure process time. Therefore, it is general that relative movement directions of the photo mask and substrate are opposite to each other between the unit exposure regions in which the exposure sequence is continuous.
  • the relative movement directions (scan directions) of the photo mask and substrate are changed depending on the unit exposure regions. Therefore, the supply/discharge functions of the pair of the liquid immersion medium fluid supply and discharge devices 36 are complementarily changed to be supply/discharge according to the scan direction so that an orientation of the liquid immersion medium fluid flow is changed.
  • one of the cleaning devices 38 is operated according to the scan direction so that a cleaning solution may be supplied from the one cleaning device 38 into the fence 35 via the corresponding liquid immersion medium fluid supply and discharge device 36 , and the liquid immersion medium fluid supply and discharge device 36 connected to the other inactive cleaning device 38 is operated so that the cleaning solution after used may be discharged from the fence 35 by means of the other liquid immersion medium fluid supply and discharge device 36 .
  • a pattern region on the photo mask may be restricted by means of a diaphragm called a mask blind.
  • a region of a resist film on which a latent image corresponding to the mask pattern on the photo mask is to be formed (unit exposure region) may be called an exposure shot.
  • Function water such as ozone water, ionized water, carbonated water, or peroxide water is used as a cleaning solution.
  • acid is used as a cleaning solution.
  • function water be used as a cleaning solution.
  • cleaning may be carried out by using water vapor.
  • the cleaning solution is supplied into the fence 35 in a state in which cavities are provided. It is preferable that the cavities be micro-cavities whose average in diameter is 1 ⁇ m or less. The micro-cavities have long service life, and are unlikely to disappear before they reach the top of the substrate.
  • An ultrasound wave, a water jet, or a cavitation jet can be used in order to generate cavities in a cleaning solution.
  • cavities are generated in the cleaning solution by means of a cavitation jet nozzle shown in FIG. 2 or a venturi tube shown in FIG. 3 .
  • reference numeral 41 denotes a high pressure water nozzle from which a high pressure cleaning solution flows
  • reference numeral 42 denotes a low pressure nozzle from which a low pressure cleaning solution flows
  • reference numeral 43 denotes a mixing portion.
  • reference numeral 44 denotes a low speed flow section
  • reference numeral 45 denotes a high speed flow section.
  • cavitation jet nozzle of FIG. 2 is disclosed in detail in transactions of Japanese Machinery Society (Edition B), Volume 67, Issue 653 (2001-1), pp. 88, Transaction No. 00 to 0620.
  • cavitation jet cleaning is a cleaning method efficiently utilizing a physical force from which there occurs a cavitation phenomenon usually desired to be avoided in fluid engineering. If a pressure lower than a saturated vapor pressure is generated in fluid, cavities occur. The cavities are destroyed if the pressure in the fluid is returned to a pressure higher than the saturated vapor pressure, and at this time, a high pressure is momentarily generated.
  • the cavitation jet shown in FIG. 2 is designed so that a speed difference in water flow occurs on a boundary between the high speed water discharged from the high pressure nozzle 41 and the low speed water discharged from the low pressure nozzle 42 .
  • the venturi tube 38 of FIG. 3 can be used as a device for generating cavities.
  • cavities occur in the fluid, since the speed of the fluid changes from a low speed at the nozzle 44 to a high speed at the nozzle 45 .
  • a Pitot tube of FIG. 4 can be used as a device for generating cavities.
  • reference numeral 46 denotes a high pressure nozzle
  • reference numeral 47 denotes a low pressure nozzle.
  • a cleaning solution containing cavities is supplied from the cleaning device 38 into the fence 35 , while the stage 34 on which the semiconductor substrate 10 is placed is moved and accordingly the semiconductor substrate 10 is moved. Cleaning is carried out while moving the semiconductor substrate 10 , thereby making it possible to clean parts or portions having been contacted with the liquid immersion medium fluid used during exposure.
  • the parts or portions having been contacted with the liquid immersion medium fluid include the projection lens system 33 , the fence 35 , the object base 37 , the stage 34 , and the liquid immersion medium fluid supply and discharge devices 36 .
  • a cleaning period For example, after exposure has been carried out for a predetermined time, a cleaning process is carried out.
  • a measuring instrument for measuring intensity of light transmitting the projection lens system 33 exposure light wavelength is preferable
  • the light intensity is measured by means of the measuring instrument after exposure has started so that a cleaning process may be carried out when the measured light intensity becomes smaller than a preset value.
  • a computing mechanism for computing a lowered quantity of light intensity from information on the light intensity measured by the measuring mechanism; and a calculating mechanism for calculating a cleaning period from the computed lowered quantity of light intensity, for carrying out the cleaning process in a computed cleaning period.
  • a rinse process may be carried out by using a rinse solution in which no cavities exist.
  • a rinse solution in which no cavities exist.
  • Water is used as a rinse solution.
  • the inside of the liquid immersion exposure tool is rinsed, thereby removing the cleaning solution which remains in the liquid immersion exposure tool.
  • a cleaning process is carried out by the above-described cleaning device, thereby making it possible to remove the cloudiness of the lens and to recover the resolution and luminescence.
  • the substance or impurities adhered to the lens or members of the tool during exposure can be removed, and an object surface can be restricted from being contaminated.
  • the liquid immersion exposure tool comprises a cleaning device, thereby making it possible to facilitate a cleaning process and to reduce a maintenance time.
  • a cleaning device By reducing the maintenance time, an equipment operation time is enhanced, and a manufacturing cost of a manufactured semiconductor element can be reduced.
  • FIG. 5 is a view showing a liquid immersion exposure tool according to a second embodiment of the present invention.
  • the same elements are designated by the same reference numerals. A duplicate description is omitted here.
  • a cleaning device 58 is provided to be opposed to a substrate face of the projection lens system 33 .
  • the cleaning device 58 is detachable from the liquid immersion exposure tool.
  • FIG. 6 is a view showing a liquid immersion exposure tool according to a third embodiment of the present invention.
  • the same elements are designated by the same reference numerals. A duplicate description is omitted here.
  • a cleaning device 68 is provided at the back surface of the stage 34 , and the cleaning device 68 moves together with the stage 34 .
  • an optical lens system and a liquid immersion medium fluid discharge device or the like configuring the liquid immersion exposure tool can be cleaned, and the cloudiness of the optical lens system can be prevented.
  • the impurities reaching an object surface are reduced, thereby making it possible to prevent contamination on the object surface.
  • the above-described cleaning device is provided at a liquid immersion type microscope for observing a surface of an object, and a cleaning process may be carried out. Further, the above-described cleaning device is provided at a liquid immersion type measuring instrument for measuring a surface of an object, and a cleaning process may be carried out. That is, the above-described cleaning device is provided at any liquid immersion type equipment, and a cleaning process may be carried out.
  • liquid immersion medium fluid used during liquid immersion
  • a liquid immersion medium fluid other than water may be used.

Abstract

There is disclosed is a liquid immersion optical tool, which comprises a light source, an optical lens system, a stage which moves an object base on which an object is to be placed, a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object, a fence which limits a region of the layer of liquid immersion medium fluid, and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2004-258676, filed Sep. 6, 2004, the entire contents of which are incorporated herein by reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a liquid immersion optical tool, a method for cleaning the liquid immersion optical tool, and a method for manufacturing a semiconductor device, wherein a liquid immersion medium fluid layer is provided between an optical lens system and an object, improving an optical performance.
  • 2. Description of the Related Art
  • A liquid immersion microscope or a liquid immersion exposure tool and the like is used as a liquid immersion optical tool for immersing liquid immersion medium fluid between an object and an optical lens system, thereby improving a resolution and a depth of focus. In a liquid immersion microscope, a liquid immersion medium liquid such as oil or water is provided between an objective lens of the microscope and an object, thereby improving a resolution and a depth of focus. In a liquid immersion exposure tool for use in a semiconductor lithography process, a liquid immersion medium fluid is provided between a lens and a wafer, thereby making it possible to increase NA (Numerical Aperture) and to increase a depth of focus. This exposure tool is expected to be a main exposure tool in manufacturing a semiconductor device in a generation following a 65 nm half pitch generation (WO 99/49504).
  • The lens of the liquid immersion optical tool is in contact with liquid immersion medium fluid for a long time when the liquid immersion optical tool is used. Thus, there is a problem that substances generated from the tool, the object surface, and a structure for guiding the liquid immersion medium fluid react with each other to adhere to the lens so that the lens surface is clouded. This clouding of the lens surface is problematic because it degrades the resolution and the luminescence.
  • In addition, there is a problem that the substance or impurities adhered to the lens or members of the tool contaminate the object surface.
  • In addition, portions having been contacted with the liquid immersion medium fluid include a liquid immersion head, an object stage, and a liquid immersion medium fluid supply and discharge device. There is a problem that, when the liquid immersion optical tool is used for a long time, impurities adhere to their associated portions, and the adhered impurities reach an object and contaminate the object surface.
  • BRIEF SUMMARY OF THE INVENTION
  • According to a first aspect of the present invention, there is provided a liquid immersion optical tool comprising:
  • a light source;
  • an optical lens system;
  • a stage which moves an object base on which an object is to be placed;
  • a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object;
  • a fence which limits a region of the layer of liquid immersion medium fluid; and
  • a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
  • According to a second aspect of the present invention, there is provided a cleaning method in the liquid immersion optical tool comprising a light source; an optical lens system; a stage which moves an object base on which an object is to be placed; a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object; a fence which limits a region of the layer of liquid immersion medium fluid; and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution,
  • wherein the portion having been contacted with the liquid immersion medium fluid is cleaned for a predetermined time by means of the cleaning device.
  • According to a third aspect of the present invention, there is provided a semiconductor device manufacturing method in which a semiconductor device is manufactured by using a liquid immersion exposure tool, the liquid immersion exposure tool comprising:
  • a light source;
  • an optical lens system;
  • a stage which moves an object base on which an object is to be placed;
  • a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object;
  • a fence which limits a region of the layer of liquid immersion medium fluid; and
  • a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
  • BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
  • FIG. 1 is a view showing a configuration of a liquid immersion exposure tool according to a first embodiment of the present invention;
  • FIG. 2 is a view showing an example of a cleaning device according to the first embodiment of the present invention;
  • FIG. 3 is a view showing another example of the cleaning device according to the first embodiment of the present invention;
  • FIG. 4 is a view showing another example of the cleaning device according to the first embodiment of the present invention;
  • FIG. 5 is a view showing a configuration of a liquid immersion exposure tool according to a second embodiment of the present invention; and
  • FIG. 6 is a view showing a configuration of a liquid immersion exposure tool according to a third embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE INVENTION
  • Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
  • First Embodiment
  • FIG. 1 is a view showing an outline configuration of a liquid immersion exposure tool according to a first embodiment of the present invention. A reticle stage 31 is provided under a lighting optical system (light source) 20. A reticle 32 which is a photo mask is placed on the reticle stage 31. The reticle stage 31 is movable in parallel to an object base 37 (i.e., in a horizontal direction in the exposure tool). A projection lens system (optical lens system) 33 is provided under the reticle stage 31. The object base 37 is provided under the projection lens system 33. A semiconductor substrate 10 is placed on the object base 37. The heights of the surface of the semiconductor substrate 10 and part of the object base 37 near the semiconductor substrate 10 are almost equal to each other. The object base 37 is movable together with a stage 34 and the semiconductor substrate 10 in the parallel direction and the orthogonal direction to the reticle stage 31 (i.e., horizontal and vertical directions in the exposure tool). The stage 34 can be inclined with respect to the horizontal plane.
  • A fence 35 is mounted at the lower part of the projection lens system 33. A liquid immersion medium fluid supply and discharge mechanism is provided at the side of the projection lens system 33. The supply and discharge mechanism comprises a pair of liquid immersion medium fluid supply and discharge devices 36 which supply liquid immersion medium fluid into the fence 35, and discharge the liquid immersion medium fluid from the fence 35. A structure of the liquid immersion medium fluid supply and discharge mechanism is not limited to this structure. When one of the pair of liquid immersion medium fluid supply and discharge devices 36 functions as a liquid immersion medium supply device, the other liquid immersion medium fluid supply and discharge device functions as a liquid immersion medium discharge device. That is, the pair of liquid immersion medium fluid supply and discharge devices 36 functions complementarily with respect to the supply and discharge of the liquid immersion medium fluid. During exposure, a space between the substrate 10 and the projection lens system 33 surrounded by the fence 35 is filled with a layer of liquid immersion medium fluid, for example, water, supplied from one of the liquid immersion medium fluid supply and discharge devices 36. Light of exposure emitted from a light source 20 reaches the semiconductor substrate 10 placed on the object base 37 via a mask pattern (i.e., a semiconductor element pattern) of the reticle 32, the projection lens system 33 and the liquid immersion medium fluid layer. In this manner, an image of the mask pattern of the reticle 32 is projected on a photo resist film provided on the semiconductor substrate 10 so that a latent image is formed on the photo resist film. A structure formed of the fence 35 and the pair of the light immersion medium fluid supply and discharge devices 36 is called a head.
  • A pair of cleaning devices 38 are connected to a pair of the liquid immersion medium fluid supply and discharge devices 36 in order to defog the projection lens system 33 and remove impurities adhered at the time of exposure. The pair of the cleaning devices 38 complementarily supply a cleaning solution into the fence 35 via the pair of the liquid immersion medium fluid supply and discharge devices 36. After exposure, the cleaning solution is supplied into the fence 35, whereby parts or portions having been contacted with the liquid immersion medium fluid supplied from the liquid immersion medium fluid supply device 36 are cleaned.
  • In a step and scan type exposure tool, all of the patterns on a photo mask are not collectively transferred to a resist laminate film. Only a pattern portion of the entire pattern of the photo mask, which is smaller than the entire pattern of the photo mask, is collectively transferred. The pattern portion is a slit shape predetermined area called an exposure field. Exposure is carried out in a state in which the photo mask and the substrate are moved at a rate according to a magnification of the projection optical system, whereby the photo mask and substrate are scanned by light ray to project the entire pattern of the photo mask onto the resist laminate film. The term “exposure field” may mean the predetermined area of the slit shape on the substrate plane which is optically conjugate with the pattern side on the photo mask.
  • A photo mask movement distance is greater than a substrate movement distance. Thus, in general, the number of photo mask movements is reduced in order to reduce an exposure process time. Therefore, it is general that relative movement directions of the photo mask and substrate are opposite to each other between the unit exposure regions in which the exposure sequence is continuous.
  • The relative movement directions (scan directions) of the photo mask and substrate are changed depending on the unit exposure regions. Therefore, the supply/discharge functions of the pair of the liquid immersion medium fluid supply and discharge devices 36 are complementarily changed to be supply/discharge according to the scan direction so that an orientation of the liquid immersion medium fluid flow is changed. In addition, it is possible that one of the cleaning devices 38 is operated according to the scan direction so that a cleaning solution may be supplied from the one cleaning device 38 into the fence 35 via the corresponding liquid immersion medium fluid supply and discharge device 36, and the liquid immersion medium fluid supply and discharge device 36 connected to the other inactive cleaning device 38 is operated so that the cleaning solution after used may be discharged from the fence 35 by means of the other liquid immersion medium fluid supply and discharge device 36.
  • A pattern region on the photo mask may be restricted by means of a diaphragm called a mask blind. A region of a resist film on which a latent image corresponding to the mask pattern on the photo mask is to be formed (unit exposure region) may be called an exposure shot.
  • Now, cleaning after exposure will be described. Function water such as ozone water, ionized water, carbonated water, or peroxide water is used as a cleaning solution. Alternatively, acid is used as a cleaning solution. However, when acid is used as a cleaning solution, the lens surface is corroded so that the lens performance may change. Thus, it is preferable that function water be used as a cleaning solution. In addition, cleaning may be carried out by using water vapor.
  • The cleaning solution is supplied into the fence 35 in a state in which cavities are provided. It is preferable that the cavities be micro-cavities whose average in diameter is 1 μm or less. The micro-cavities have long service life, and are unlikely to disappear before they reach the top of the substrate.
  • An ultrasound wave, a water jet, or a cavitation jet can be used in order to generate cavities in a cleaning solution. For example, cavities are generated in the cleaning solution by means of a cavitation jet nozzle shown in FIG. 2 or a venturi tube shown in FIG. 3. In FIG. 2, reference numeral 41 denotes a high pressure water nozzle from which a high pressure cleaning solution flows; reference numeral 42 denotes a low pressure nozzle from which a low pressure cleaning solution flows; and reference numeral 43 denotes a mixing portion. In FIG. 3, reference numeral 44 denotes a low speed flow section, and reference numeral 45 denotes a high speed flow section.
  • The cavitation jet nozzle of FIG. 2 is disclosed in detail in transactions of Japanese Machinery Society (Edition B), Volume 67, Issue 653 (2001-1), pp. 88, Transaction No. 00 to 0620. In general, cavitation jet cleaning is a cleaning method efficiently utilizing a physical force from which there occurs a cavitation phenomenon usually desired to be avoided in fluid engineering. If a pressure lower than a saturated vapor pressure is generated in fluid, cavities occur. The cavities are destroyed if the pressure in the fluid is returned to a pressure higher than the saturated vapor pressure, and at this time, a high pressure is momentarily generated.
  • The cavitation jet shown in FIG. 2 is designed so that a speed difference in water flow occurs on a boundary between the high speed water discharged from the high pressure nozzle 41 and the low speed water discharged from the low pressure nozzle 42.
  • The venturi tube 38 of FIG. 3 can be used as a device for generating cavities. When a fluid passes from a nozzle 44 having a large aperture via a nozzle 45 having a small aperture, cavities occur in the fluid, since the speed of the fluid changes from a low speed at the nozzle 44 to a high speed at the nozzle 45.
  • In addition, a Pitot tube of FIG. 4 can be used as a device for generating cavities. In FIG. 4, reference numeral 46 denotes a high pressure nozzle, and reference numeral 47 denotes a low pressure nozzle.
  • During cleaning, a cleaning solution containing cavities is supplied from the cleaning device 38 into the fence 35, while the stage 34 on which the semiconductor substrate 10 is placed is moved and accordingly the semiconductor substrate 10 is moved. Cleaning is carried out while moving the semiconductor substrate 10, thereby making it possible to clean parts or portions having been contacted with the liquid immersion medium fluid used during exposure. The parts or portions having been contacted with the liquid immersion medium fluid include the projection lens system 33, the fence 35, the object base 37, the stage 34, and the liquid immersion medium fluid supply and discharge devices 36.
  • Now, a cleaning period will be described. For example, after exposure has been carried out for a predetermined time, a cleaning process is carried out. In one option, a measuring instrument for measuring intensity of light transmitting the projection lens system 33 (exposure light wavelength is preferable) is provided at the liquid immersion exposure tool, and the light intensity is measured by means of the measuring instrument after exposure has started so that a cleaning process may be carried out when the measured light intensity becomes smaller than a preset value. In another option, in addition to the above-described measuring mechanism, there are further provided: a computing mechanism for computing a lowered quantity of light intensity from information on the light intensity measured by the measuring mechanism; and a calculating mechanism for calculating a cleaning period from the computed lowered quantity of light intensity, for carrying out the cleaning process in a computed cleaning period.
  • In addition, after the cleaning process has been carried out, a rinse process may be carried out by using a rinse solution in which no cavities exist. By supplying the rinse solution, the cleaning solution which remains in the liquid immersion exposure tool can be removed. Water is used as a rinse solution. For example, by supplying water as a rinse solution from the liquid immersion medium fluid supply and discharge device 36, the inside of the liquid immersion exposure tool is rinsed, thereby removing the cleaning solution which remains in the liquid immersion exposure tool.
  • A cleaning process is carried out by the above-described cleaning device, thereby making it possible to remove the cloudiness of the lens and to recover the resolution and luminescence. In addition, the substance or impurities adhered to the lens or members of the tool during exposure can be removed, and an object surface can be restricted from being contaminated.
  • In addition, the liquid immersion exposure tool comprises a cleaning device, thereby making it possible to facilitate a cleaning process and to reduce a maintenance time. By reducing the maintenance time, an equipment operation time is enhanced, and a manufacturing cost of a manufactured semiconductor element can be reduced.
  • Second Embodiment
  • The present embodiment shows an example which is different from that of the liquid immersion exposure tool shown in FIG. 1. FIG. 5 is a view showing a liquid immersion exposure tool according to a second embodiment of the present invention. The same elements are designated by the same reference numerals. A duplicate description is omitted here.
  • In the liquid immersion exposure tool shown in FIG. 5, a cleaning device 58 is provided to be opposed to a substrate face of the projection lens system 33. The cleaning device 58 is detachable from the liquid immersion exposure tool.
  • Third Embodiment
  • The present embodiment shows another example which is different from that of the liquid immersion exposure tool shown in FIG. 1. FIG. 6 is a view showing a liquid immersion exposure tool according to a third embodiment of the present invention. The same elements are designated by the same reference numerals. A duplicate description is omitted here.
  • In the liquid immersion exposure tool shown in FIG. 6, a cleaning device 68 is provided at the back surface of the stage 34, and the cleaning device 68 moves together with the stage 34.
  • According to the above-described embodiments, an optical lens system and a liquid immersion medium fluid discharge device or the like configuring the liquid immersion exposure tool can be cleaned, and the cloudiness of the optical lens system can be prevented. In addition, the impurities reaching an object surface are reduced, thereby making it possible to prevent contamination on the object surface.
  • While the above embodiments have described examples of the liquid immersion exposure tool, the above-described cleaning device is provided at a liquid immersion type microscope for observing a surface of an object, and a cleaning process may be carried out. Further, the above-described cleaning device is provided at a liquid immersion type measuring instrument for measuring a surface of an object, and a cleaning process may be carried out. That is, the above-described cleaning device is provided at any liquid immersion type equipment, and a cleaning process may be carried out.
  • In addition, while, in the above embodiments, water has been used as a liquid immersion medium fluid used during liquid immersion, a liquid immersion medium fluid other than water may be used.
  • Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

Claims (20)

1. A liquid immersion optical tool comprising:
a light source;
an optical lens system;
a stage which moves an object base on which an object is to be placed;
a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object;
a fence which limits a region of the layer of liquid immersion medium fluid; and
a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
2. The liquid immersion optical tool according to claim 1, wherein the portion having been contacted with the liquid immersion medium fluid is one or more selected from the group including the optical lens system, the fence, the object base, the stage, the head, the liquid immersion medium fluid supply device, and the liquid immersion medium fluid discharge device.
3. The liquid immersion optical tool according to claim 1, wherein the cleaning device generates cavities in the cleaning solution.
4. The liquid immersion optical tool according to claim 3, wherein an average diameter of the cavities is equal to or smaller than 1 μm.
5. The liquid immersion optical tool according to claim 1, wherein the cleaning device has any of a cavitation jet, a venturi tube, a Pitot tube, and a ultrasound generator, and the cavities are generated by any of the cavitation jet, the venturi tube, the Pitot tube, and the ultrasound generator.
6. The liquid immersion optical tool according to claim 1, wherein the cleaning device is connected to the liquid immersion medium fluid supply device.
7. The liquid immersion optical tool according to claim 1, wherein the cleaning device is loaded on the stage.
8. The liquid immersion optical tool according to claim 1, wherein the cleaning device is detachable.
9. The liquid immersion optical tool according to claim 1, wherein the cleaning solution is one selected from the group of function waters including ozone water, ionized water, carbonated water, and peroxide water.
10. The liquid immersion optical tool according to claim 1, wherein the cleaning solution is acid.
11. The liquid immersion optical tool according to claim 1, wherein the cleaning solution is water vapor.
12. The liquid immersion optical tool according to claim 1, further comprising a measuring mechanism which measures intensity of light transmitting the optical lens system.
13. The liquid immersion optical tool according to claim 12, further comprising:
a computing mechanism which computes a lowered quantity of light intensity from information on the light intensity measured by the measuring mechanism; and
a calculating mechanism which calculates a period of cleaning by the cleaning device from the computed lowered quantity of light intensity.
14. The liquid immersion optical tool according to claim 1, wherein a predetermined pattern is transferred to the object by using the optical lens system.
15. The liquid immersion optical tool according to claim 14, wherein the predetermined pattern is a pattern of a semiconductor element.
16. The liquid immersion optical tool according to claim 1, wherein a surface of the object is observed or measured by using the optical lens.
17. A cleaning method in the liquid immersion optical tool comprising a light source; an optical lens system; a stage which moves an object base on which an object is to be placed; a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object; a fence which limits a region of the layer of liquid immersion medium fluid; and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution,
wherein the portion having been contacted with the liquid immersion medium fluid is cleaned for a predetermined time by means of the cleaning device.
18. The cleaning method according to claim 17, wherein a rinse process is carried out by means of a rinse solution in which no cavities exist, after cleaning by the cleaning solution is carried out for the predetermined time.
19. The cleaning method according to claim 18, wherein the rinse solution is water.
20. A semiconductor device manufacturing method in which a semiconductor device is manufactured by using a liquid immersion exposure tool, the liquid immersion exposure tool comprising:
a light source;
an optical lens system;
a stage which moves an object base on which an object is to be placed;
a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object;
a fence which limits a region of the layer of liquid immersion medium fluid; and
a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
US11/217,464 2004-09-06 2005-09-02 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device Abandoned US20060050351A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/504,053 US20070039637A1 (en) 2004-09-06 2006-08-15 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
US12/510,009 US8174669B2 (en) 2004-09-06 2009-07-27 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004258676A JP4772306B2 (en) 2004-09-06 2004-09-06 Immersion optical device and cleaning method
JP2004-258676 2004-09-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/504,053 Continuation-In-Part US20070039637A1 (en) 2004-09-06 2006-08-15 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
US20060050351A1 true US20060050351A1 (en) 2006-03-09

Family

ID=35995896

Family Applications (3)

Application Number Title Priority Date Filing Date
US11/217,464 Abandoned US20060050351A1 (en) 2004-09-06 2005-09-02 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US11/504,053 Abandoned US20070039637A1 (en) 2004-09-06 2006-08-15 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
US12/510,009 Expired - Fee Related US8174669B2 (en) 2004-09-06 2009-07-27 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
US11/504,053 Abandoned US20070039637A1 (en) 2004-09-06 2006-08-15 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
US12/510,009 Expired - Fee Related US8174669B2 (en) 2004-09-06 2009-07-27 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device

Country Status (2)

Country Link
US (3) US20060050351A1 (en)
JP (1) JP4772306B2 (en)

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050024609A1 (en) * 2003-06-11 2005-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US20070091287A1 (en) * 2005-10-24 2007-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US20070127001A1 (en) * 2005-12-02 2007-06-07 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070268469A1 (en) * 2006-05-17 2007-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and Method for Particle Monitoring in Immersion Lithography
US20070285631A1 (en) * 2006-05-22 2007-12-13 Asml Netherland B.V Lithographic apparatus and lithographic apparatus cleaning method
US20080002164A1 (en) * 2006-06-29 2008-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US20080018867A1 (en) * 2004-12-06 2008-01-24 Nikon Corporation Maintenance Method, Maintenance Device, Exposure Apparatus, and Device Manufacturing Method
US20080055575A1 (en) * 2006-08-30 2008-03-06 Nikon Corporation Exposure apparatus, device manufacturing method, cleaning method, and cleaning member
WO2008028475A2 (en) * 2006-09-07 2008-03-13 Leica Microsystems Cms Gmbh Immersion objective, apparatus for forming an immersion film and method
US20080156356A1 (en) * 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
WO2008089990A2 (en) * 2007-01-26 2008-07-31 Carl Zeiss Smt Ag Method for operating an immersion lithography apparatus
US20080198343A1 (en) * 2007-02-15 2008-08-21 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US20080202555A1 (en) * 2006-09-08 2008-08-28 Nikon Corporation Cleaning member, cleaning method, and device manufacturing method
US20080218712A1 (en) * 2004-10-05 2008-09-11 Asml Netherlands B. V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
US20080273181A1 (en) * 2007-05-04 2008-11-06 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080284990A1 (en) * 2007-05-04 2008-11-20 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic cleaning method
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US20090027635A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus and Contamination Removal or Prevention Method
US20090066922A1 (en) * 2006-05-18 2009-03-12 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
EP2043134A1 (en) * 2006-06-30 2009-04-01 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
US20090086175A1 (en) * 2007-09-27 2009-04-02 Asml Netherlands B.V. Methods relating to immersion lithography and an immersion lithographic apparatus
US20090091716A1 (en) * 2007-09-27 2009-04-09 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a lithographic apparatus
US20090109411A1 (en) * 2007-02-15 2009-04-30 Asml Holding N.V. Systems and Methods for Insitu Lens Cleaning Using Ozone in Immersion Lithography
US20090174870A1 (en) * 2007-10-31 2009-07-09 Asml Netherlands B.V. Cleaning apparatus and immersion lithographic apparatus
US20090174871A1 (en) * 2007-12-18 2009-07-09 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus
US20090195761A1 (en) * 2007-12-20 2009-08-06 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US20100097587A1 (en) * 2008-10-21 2010-04-22 Asml Netherlands B.V. Lithographic apparatus and a method of removing contamination
US7866330B2 (en) 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20110162100A1 (en) * 2009-12-28 2011-06-30 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
USRE42849E1 (en) 2004-02-09 2011-10-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20120204913A1 (en) * 2007-05-28 2012-08-16 Nikon Corporation Exposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20130182429A1 (en) * 2012-01-16 2013-07-18 Richard S. Belliveau Programmable de-fogger system for a light projector

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170018113A (en) 2003-04-09 2017-02-15 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW201834020A (en) 2003-10-28 2018-09-16 日商尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
TWI612338B (en) 2003-11-20 2018-01-21 尼康股份有限公司 Optical illuminating apparatus, exposure device, exposure method, and device manufacturing method
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
EP1783822A4 (en) * 2004-06-21 2009-07-15 Nikon Corp Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device, and device manufacturing method
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
WO2006137410A1 (en) * 2005-06-21 2006-12-28 Nikon Corporation Exposure apparatus, exposure method, maintenance method and device manufacturing method
JP2007150102A (en) * 2005-11-29 2007-06-14 Fujitsu Ltd Exposure device, and cleaning method of optical element
KR20090030491A (en) * 2007-09-20 2009-03-25 삼성전자주식회사 Cleaing solution for immersion photolithography system and immersion photolithography process
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036766A1 (en) * 2008-04-25 2009-10-27 Asml Netherlands Bv Methods related to immersion lithography and an immersion lithographic apparatus.
TW201102765A (en) * 2009-07-01 2011-01-16 Nikon Corp Grinding device, grinding method, exposure device and production method of a device
JP6252096B2 (en) * 2013-10-22 2017-12-27 株式会社ニコン Observation method and microscope

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6496257B1 (en) * 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
US6813004B1 (en) * 1998-04-07 2004-11-02 Nikon Corporation Exposure method, exposure apparatus and making method of the apparatus, and device and manufacturing method of the device
US20050217703A1 (en) * 2002-09-30 2005-10-06 Lam Research Corp. Apparatus and method for utilizing a meniscus in substrate processing
US7119874B2 (en) * 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753930B2 (en) * 1992-11-27 1998-05-20 キヤノン株式会社 Immersion type projection exposure equipment
JPH11162831A (en) * 1997-11-21 1999-06-18 Nikon Corp Projection aligner and projection aligning method
WO1999049504A1 (en) 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP3535820B2 (en) * 2000-10-06 2004-06-07 エム・エフエスアイ株式会社 Substrate processing method and substrate processing apparatus
EP1586386A4 (en) * 2002-12-03 2010-04-21 Nikon Corp Contaminant removing method and device, and exposure method and apparatus
SG10201803122UA (en) * 2003-04-11 2018-06-28 Nikon Corp Immersion lithography apparatus and device manufacturing method
JP2005277363A (en) * 2003-05-23 2005-10-06 Nikon Corp Exposure device and device manufacturing method
JP2006032750A (en) * 2004-07-20 2006-02-02 Canon Inc Immersed projection aligner and device manufacturing method
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
EP1821337B1 (en) * 2004-12-06 2016-05-11 Nikon Corporation Maintenance method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6496257B1 (en) * 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
US6813004B1 (en) * 1998-04-07 2004-11-02 Nikon Corporation Exposure method, exposure apparatus and making method of the apparatus, and device and manufacturing method of the device
US20050217703A1 (en) * 2002-09-30 2005-10-06 Lam Research Corp. Apparatus and method for utilizing a meniscus in substrate processing
US7119874B2 (en) * 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby

Cited By (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050024609A1 (en) * 2003-06-11 2005-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100128235A1 (en) * 2003-06-11 2010-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9110389B2 (en) 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964858B2 (en) 2003-06-11 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8363208B2 (en) * 2003-06-11 2013-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE42849E1 (en) 2004-02-09 2011-10-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8902399B2 (en) 2004-10-05 2014-12-02 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
US20080218712A1 (en) * 2004-10-05 2008-09-11 Asml Netherlands B. V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
US8891055B2 (en) * 2004-12-06 2014-11-18 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US8456608B2 (en) * 2004-12-06 2013-06-04 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US20080018867A1 (en) * 2004-12-06 2008-01-24 Nikon Corporation Maintenance Method, Maintenance Device, Exposure Apparatus, and Device Manufacturing Method
US20130235359A1 (en) * 2004-12-06 2013-09-12 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US20100315609A1 (en) * 2004-12-06 2010-12-16 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7804576B2 (en) * 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US20080002162A1 (en) * 2004-12-20 2008-01-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8638419B2 (en) 2004-12-20 2014-01-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10509326B2 (en) 2004-12-20 2019-12-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8115899B2 (en) 2004-12-20 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9703210B2 (en) 2004-12-20 2017-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US20070091287A1 (en) * 2005-10-24 2007-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US20070127001A1 (en) * 2005-12-02 2007-06-07 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US10061207B2 (en) 2005-12-02 2018-08-28 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070268469A1 (en) * 2006-05-17 2007-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and Method for Particle Monitoring in Immersion Lithography
US7602471B2 (en) * 2006-05-17 2009-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for particle monitoring in immersion lithography
US8514366B2 (en) 2006-05-18 2013-08-20 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
US20090066922A1 (en) * 2006-05-18 2009-03-12 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
US20070285631A1 (en) * 2006-05-22 2007-12-13 Asml Netherland B.V Lithographic apparatus and lithographic apparatus cleaning method
US7969548B2 (en) 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US20110222034A1 (en) * 2006-05-22 2011-09-15 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US20080049201A1 (en) * 2006-05-22 2008-02-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US8564759B2 (en) 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US20080002164A1 (en) * 2006-06-29 2008-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
EP2043134A1 (en) * 2006-06-30 2009-04-01 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
EP2043134A4 (en) * 2006-06-30 2012-01-25 Nikon Corp Maintenance method, exposure method and apparatus and device manufacturing method
US20090103064A1 (en) * 2006-06-30 2009-04-23 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
US20080055575A1 (en) * 2006-08-30 2008-03-06 Nikon Corporation Exposure apparatus, device manufacturing method, cleaning method, and cleaning member
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
US20100027109A1 (en) * 2006-09-07 2010-02-04 Leica Microsystems Cms Gmbh Immersion objective, apparatus for forming an immersion film and method
WO2008028475A2 (en) * 2006-09-07 2008-03-13 Leica Microsystems Cms Gmbh Immersion objective, apparatus for forming an immersion film and method
WO2008028475A3 (en) * 2006-09-07 2008-05-29 Leica Microsystems Immersion objective, apparatus for forming an immersion film and method
US8199407B2 (en) 2006-09-07 2012-06-12 Leica Microsystems Cms Gmbh Immersion objective, apparatus for forming an immersion film and method
US20100195068A1 (en) * 2006-09-08 2010-08-05 Yuichi Shibazaki Cleaning member, cleaning method, and device manufacturing method
US20080202555A1 (en) * 2006-09-08 2008-08-28 Nikon Corporation Cleaning member, cleaning method, and device manufacturing method
US7927428B2 (en) 2006-09-08 2011-04-19 Nikon Corporation Cleaning member, cleaning method, and device manufacturing method
US20080156356A1 (en) * 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US8721803B2 (en) 2006-12-05 2014-05-13 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
WO2008089990A3 (en) * 2007-01-26 2008-12-04 Zeiss Carl Smt Ag Method for operating an immersion lithography apparatus
WO2008089990A2 (en) * 2007-01-26 2008-07-31 Carl Zeiss Smt Ag Method for operating an immersion lithography apparatus
US20080198343A1 (en) * 2007-02-15 2008-08-21 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US20090109411A1 (en) * 2007-02-15 2009-04-30 Asml Holding N.V. Systems and Methods for Insitu Lens Cleaning Using Ozone in Immersion Lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US7900641B2 (en) 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080273181A1 (en) * 2007-05-04 2008-11-06 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080271750A1 (en) * 2007-05-04 2008-11-06 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080271747A1 (en) * 2007-05-04 2008-11-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080284990A1 (en) * 2007-05-04 2008-11-20 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic cleaning method
US20110069290A1 (en) * 2007-05-04 2011-03-24 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7841352B2 (en) 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20120204913A1 (en) * 2007-05-28 2012-08-16 Nikon Corporation Exposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method
US9599908B2 (en) 2007-07-24 2017-03-21 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US9158206B2 (en) 2007-07-24 2015-10-13 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US9019466B2 (en) 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US20090027635A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus and Contamination Removal or Prevention Method
US20090027636A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus, Reflective Member And A Method of Irradiating The Underside Of A Liquid Supply System
US20090086175A1 (en) * 2007-09-27 2009-04-02 Asml Netherlands B.V. Methods relating to immersion lithography and an immersion lithographic apparatus
US8638421B2 (en) 2007-09-27 2014-01-28 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a lithographic apparatus
US20090091716A1 (en) * 2007-09-27 2009-04-09 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a lithographic apparatus
US8587762B2 (en) 2007-09-27 2013-11-19 Asml Netherlands B.V. Methods relating to immersion lithography and an immersion lithographic apparatus
US20090174870A1 (en) * 2007-10-31 2009-07-09 Asml Netherlands B.V. Cleaning apparatus and immersion lithographic apparatus
US20090174871A1 (en) * 2007-12-18 2009-07-09 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus
US9289802B2 (en) * 2007-12-18 2016-03-22 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus
US9036128B2 (en) 2007-12-20 2015-05-19 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US20090195761A1 (en) * 2007-12-20 2009-08-06 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US8243255B2 (en) 2007-12-20 2012-08-14 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US9405205B2 (en) 2007-12-20 2016-08-02 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US9785061B2 (en) 2007-12-20 2017-10-10 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100097587A1 (en) * 2008-10-21 2010-04-22 Asml Netherlands B.V. Lithographic apparatus and a method of removing contamination
US20110162100A1 (en) * 2009-12-28 2011-06-30 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
US9188845B2 (en) 2012-01-16 2015-11-17 Bakco Lighting Systems, Inc. Programmable de-fogger system for a light projector
US20130182429A1 (en) * 2012-01-16 2013-07-18 Richard S. Belliveau Programmable de-fogger system for a light projector
US8770764B2 (en) * 2012-01-16 2014-07-08 Barco Lighting Systems, Inc. Programmable de-fogger system for a light projector

Also Published As

Publication number Publication date
JP2006073951A (en) 2006-03-16
US20070039637A1 (en) 2007-02-22
US8174669B2 (en) 2012-05-08
JP4772306B2 (en) 2011-09-14
US20090284718A1 (en) 2009-11-19

Similar Documents

Publication Publication Date Title
US20060050351A1 (en) Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
KR101508809B1 (en) Cleanup method for optics in immersion lithography
JP6055501B2 (en) Lithographic apparatus and device manufacturing method
JP5437761B2 (en) Lithographic apparatus and device manufacturing method
JP5620439B2 (en) Lithographic apparatus and device manufacturing method
JP5264504B2 (en) Cleaning liquid, cleaning method, liquid generator, exposure apparatus, and device manufacturing method
JP4848003B2 (en) Immersion lithography system with tilted showerhead and immersion lithography method
JP2010093299A (en) Immersion lithography apparatus, immersion lithography method, and method for manufacturing device
JP2011066416A (en) Lithographic apparatus and device manufacturing method
JP2007227543A (en) Immersion optical device, cleaning method, and immersion exposure method
JP2009177183A (en) Lithography apparatus and device manufacturing method
JP4308638B2 (en) Pattern formation method
JP2005150290A (en) Exposure apparatus and method of manufacturing device
US20090268175A1 (en) Exposure apparatus and device manufacturing method
KR20080080919A (en) Immersion exposure apparatus and device manufacturing method
JP2008060156A (en) Immersion exposure apparatus and device manufacturing method
KR20150055558A (en) Foreign substance detection method, foreign substance detection apparatus, exposure method, and method of manufacturing device
JP2011108735A (en) Cleaning member, exposure device, cleaning method, and method of manufacturing device
JP2010251461A (en) Cleaning device, cleaning method, exposure device, and device manufacturing method
JP2008252040A (en) Liquid-immersed exposure equipment and cleaning method therefor

Legal Events

Date Code Title Description
AS Assignment

Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HIGASHIKI, TATSUHIKO;REEL/FRAME:017245/0123

Effective date: 20050907

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION