US20060050219A1 - Method for manufacturing an in plane switching mode liquid crystal display device - Google Patents
Method for manufacturing an in plane switching mode liquid crystal display device Download PDFInfo
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- US20060050219A1 US20060050219A1 US11/268,501 US26850105A US2006050219A1 US 20060050219 A1 US20060050219 A1 US 20060050219A1 US 26850105 A US26850105 A US 26850105A US 2006050219 A1 US2006050219 A1 US 2006050219A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
Definitions
- the present invention relates to a display device, and more particularly, to an in-plane switching mode liquid crystal display (LCD) device and a method for manufacturing the same.
- LCD liquid crystal display
- a Cathode Ray Tube (CRT), one type of display devices, has been widely used for monitors of information terminals and measuring instruments including a television.
- CRT Cathode Ray Tube
- LCD Liquid Crystal Display
- a low cost and high performance thin film transistor liquid crystal display (TFT-LCD) device uses an amorphous silicon thin film transistor as a switching device.
- the LCD device is oriented towards a high resolution display that operates in a video graphic array (VGA) mode with the maximum resolution of 640 ⁇ 480 pixels, a super video graphic array (SVGA) mode of 800 ⁇ 600 pixels or in an extended video graphic array (XVGA) mode of 1024 ⁇ 768 pixels.
- VGA video graphic array
- SVGA super video graphic array
- XVGA extended video graphic array
- an in-plane switching mode LCD device that controls alignment of a liquid crystal by an electric field parallel to a substrate has been proposed.
- FIG. 1 is a plan view of a related art in-plane switching mode LCD device.
- FIG. 2 is a sectional view taken along line I-I′ of FIG. 1 .
- a gate line 1 is formed on a first substrate 10 , and then a common line 3 is formed in parallel to the gate line 1 .
- a common electrode 9 extends from the common line 3 to a pixel region.
- a gate insulating film 12 is formed on an entire surface of the first substrate including the gate line 1 , the common line 3 , and the common electrode 9 .
- a data line 2 crosses the gate line 1 on the gate insulating film 12 , so that a plurality of pixel regions are defined.
- FIG. 1 shows a unit pixel.
- a thin film transistor is formed on the gate insulating film 12 of a region where the gate line 1 crosses the date line 2 .
- the TFT includes gate electrode, gate insulating film, semiconductor film, and source/drain electrodes.
- a data electrode 8 is formed on the gate insulating film 12 within the pixel region. At this time, the data electrode 8 is arranged in parallel to the common electrode 9 , and between the common electrodes 9 . Also, the data electrode has an overlapping portion between the common line 3 and the common electrode 9 to form a storage capacitor. The data electrode 8 is connected with the drain electrode 7 of the TFT.
- a passivation film 13 is formed on the gate insulating film 12 including the TFT, the data line 2 , and the data electrode 8 .
- a color filter 21 is formed on a second substrate 20 , and a liquid crystal layer 22 is formed between the first and second substrates 10 and 20 .
- polarizers are formed on external surfaces of the substrates 10 and 20 to polarize transmitted light
- alignment films adjacent to the liquid crystal layer are formed on internal surfaces of the substrates 10 and 20 to control an alignment direction of the liquid crystal layer.
- the related art in-plane switching mode LCD device has the following problems.
- the present invention is directed to an in plane switching mode LCD device that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide an in plane switching mode LCD device and a method for manufacturing the same that can easily repair data line by forming dummy patterns to prepare an open region of data line during a process.
- an in-plane switching mode LCD device includes first and second substrates arranged to opposing each other; a liquid crystal layer between the first and second substrates, gate and data lines arranged to cross each other on the first substrate, a plurality of common electrodes and data electrodes for applying an electric field parallel to the first substrate within a pixel region defined by the gate and data lines, and first and second dummy patterns integral with at least one of the common electrodes respectively overlapping first and second portions of the data lines defining the pixel region.
- a method for manufacturing an in-plane switching mode LCD device includes the steps of forming a gate line, a gate electrode, a common electrode, first and second dummy patterns integral with the common electrode, and a common line on a first substrate; forming a gate insulating film on an entire surface of the first substrate including the first and second dummy patterns and the common electrode, forming a data line crossing the gate line to partially overlap the first and second dummy patterns, forming a data electrode integral with the data line; forming a passivation film on the entire surface including the data line and the data electrode, and forming a liquid crystal layer between the first substrate and a second substrate opposite to the first substrate.
- a data line has an open region, it can be repaired using a common electrode. That is, when the common electrode is patterned, a dummy pattern of the common electrode material is formed to overlap the data line, so that a signal disconnected by an open region is bypassed using the dummy pattern and the common electrode, thereby forming a path for transmitting the signal.
- a gate line is long enough to have an open region.
- the data line is long enough that an open region may be caused by foreign particles during the manufacturing process. That is, in a single pixel unit, the length of the data line and the gate line are substantially the same. In an XGA, there are 768 gate lines and 1024*3 data lines. Therefore, the overall length of the data lines is greater than that of gate lines. Thus, the data lines may have a large number of open regions compared to the gate lines.
- the signal of the data line is bypassed through the dummy pattern which is integral with the common electrode, so that a problem of the open region can be solved.
- FIG. 1 is a plan view of a related art in-plane switching mode LCD device
- FIG. 2 is a sectional view taken along line I-I′ of FIG. 1 ;
- FIG. 3 is a plan view of the in-plane switching mode LCD device according to the present invention.
- FIG. 4 is a sectional view taken along line II-II′ of FIG. 3 ;
- FIG. 5 is a sectional view taken along line III-III′ of FIG. 3 ;
- FIG. 6A to FIG. 6D are showing manufacturing process steps of the in-plane switching mode LCD device according to the present invention.
- FIG. 3 is a plan view of the in-plane switching mode LCD device according to the present invention.
- FIG. 4 is a sectional view taken along line II-II′ of FIG. 3 .
- FIG. 5 is a sectional view taken along line III-III′ FIG. 3 .
- gate and data lines 31 and 33 are formed on a first substrate 30 .
- the gate and data lines 31 and 33 cross each other at a predetermined distance for defining a plurality of pixel regions.
- a common line 35 is formed in parallel to the gate line 31 within the pixel region.
- a thin film transistor (TFT) is formed in a portion where the gate line 31 crosses the data line 33 .
- TFT thin film transistor
- a data electrode 37 is formed in parallel to the data line 33 within the pixel region, which is electrically connected with a drain electrode of the TFT.
- a common electrode 41 is connected with the common line 35 and formed in parallel to the data electrode 37 .
- First and second dummy patterns 39 and 39 a are integral with the common electrode. Also, one portion of each of the first and second dummy patterns overlaps the data line 33 .
- the data line 33 may have an open region in the middle (“S” portion) of the data line defining a unit pixel. Accordingly, the first and second dummy patterns 39 and 39 a are respectively formed at both sides of the middle portion of the data line, thereby forming a signal path inclusive of the data line 33 , the first dummy pattern 39 , the common electrode 41 , and the second dummy pattern 39 a.
- the degree of overlap between the dummy pattern 39 and the data line 33 is determined by the degree of load of the data line according to a predetermined model.
- FIG. 3 shows a unit pixel.
- FIG. 4 to FIG. 5 A sectional structure of the in-plane switching mode LCD device is shown in FIG. 4 to FIG. 5 .
- the gate line 31 (not shown in FIG. 4 ) is formed in one direction on the first substrate 30 , and then common line 35 is formed in parallel to the gate line 31 .
- the first dummy pattern 39 is formed to be extended to a portion of the data line 33 , and the common electrode 41 is formed integrally with the first dummy pattern 39 .
- the gate insulating film 43 is formed on the entire surface of the first substrate including the gate line 31 , the common electrode 41 , the first and second dummy patterns 39 and 39 a , and common line 35 .
- the data line 33 crosses the gate line 31 to partially overlap the first dummy pattern 39 on the gate insulating film 43 .
- the data electrode 37 is formed on the gate insulating film 43 within the pixel region, and the passivation film 38 is formed on the entire surface of the first substrate including the data electrode 37 and the data line 33 .
- the first and second dummy patterns 39 and 39 a are the same material as that of the common electrode 41 , which is generally formed of a transparent conductive material such as an Indium Tin Oxide (ITO). And the outmost common electrode may be formed of metal or of ITO on the above. Also, the common electrode 41 is electrically connected with the common line 35 on the first substrate 30 .
- the data electrode 37 is formed on the gate insulating film 43 , and, at the same time, source/drain electrodes are formed on the gate insulating film 43 . Then, the data electrode 37 is connected with the drain electrode.
- a light shielding layer (not shown) and a color filter layer 51 are formed on the second substrate 50 .
- the light shielding layer is to shield light leaked from the TFT, the gate line and the data line.
- the color filter layer 51 is to display colors.
- the liquid crystal layer 53 is formed between the first and second substrates 30 and 50 .
- polarizers are formed on external surfaces of the substrates 30 and 50 to polarize transmitted light
- alignment films attached to the liquid crystal layer are formed on internal surfaces of the substrate 30 and 50 to control an alignment direction of the liquid crystal layer.
- the data line 33 is electrically connected with the first and second dummy patterns by a laser welding (“T” and “U” portions of FIG. 3 ), while a portion (“V” and “W” portions) connected with the common line 35 among the common electrode 41 is cut off by a laser, thereby electrically insulating the common electrode 41 from the common line 35 .
- video signals applied from a driving circuit are transmitted through a path in the order of the data line 33 , the first dummy pattern 39 , the common electrode 41 disconnected from the common line 35 , the second dummy pattern 39 a , and the data line 33 .
- FIG. 6A to FIG. 6D A method for manufacturing the in-plane switching mode LCD device of the present invention will be described with reference to FIG. 6A to FIG. 6D .
- sectional views shown in FIG. 6A to FIG. 6D are taken along line II-II′ of FIG. 3 .
- a conductive material such as Al, Mo, Ta, Al alloy or ITO is formed on the first substrate 30 by a sputtering process, and then the gate line 31 , the gate electrode, the common electrode 41 and the common line 35 are formed by a photolithography process.
- the common line 35 is formed in parallel to the gate line 3 i .
- the common electrode 41 is formed integrally with the first and second dummy patterns 39 and 39 a (not shown) that extend to a region where the data line 33 will be formed to overlap with the data line 33 at a predetermined portion. That is, the first and second dummy patterns 39 and 39 a are the same material as that of the common electrode 41 .
- the first and second dummy patterns 39 and 39 a are patterned at the same time as the common electrode 41 by the photolithography process.
- the gate insulating film 43 of SiN x or SiO x is formed on an entire surface of the first substrate 30 including the common electrode 41 and the gate line 31 by a plasma chemical vapor deposition (CVD) process.
- CVD plasma chemical vapor deposition
- a metal such as Al, Cr, Ti, and Al alloy is formed on the gate insulating film 43 , and then crosses the gate line 31 by the photolithography process. Also, data line 33 is formed to overlap the first and second dummy patterns 39 and 39 a , and then the data electrode 37 is formed substantially in parallel to the data line 33 within the pixel region.
- a passivation film 38 is of an inorganic material such as SiN x and SiO x or an organic material such as Benzocyclobutene (BCB) and Acryl is formed on the entire surfaces including the data line 33 and the data electrode 37 .
- the liquid crystal layer is injected between the second substrate 50 and the first substrate 30 , so that the manufacturing process steps are completed.
- the alignment film on the first and second substrates 30 and 50 .
- a polyimide-based compound, polyvinylalcohol (PVA), or polyamic acid is deposited on the first and second substrates 30 and 50 , rubbing may be performed to determine the alignment direction.
- a photo-alignment material such as polysiloxanecinnamate, polyvinylcinnamate, and cellulosecinnamate is formed on the first and second substrates 30 and 50 , light may be irradiated to determine the alignment direction and the pretilt angle.
- polarized light, non-polarized light, unpolarized light or partially polarized light is irradiated one or more time.
- ultraviolet rays are used.
- the data line 33 has the open region
- the portion that the data line 33 is overlapped with the first and second dummy patterns 39 and 39 a is electrically connected with each other by a laser welding
- the common electrode 41 formed integral with the first and second dummy patterns 39 and 39 a is electrically insulated from the common line 35 by a laser cutting. Accordingly, once the open region of the data line is generated, a signal path is bypassed in the order of the data line 33 , the first dummy pattern 39 , the common electrode 41 (electrically disconnected from the common line), the second dummy pattern 39 a , and the data line 33 , thereby repairing the open region of the data line.
- the dummy patterns are formed in a single body with the common electrode to overlap the data line during forming the common electrode for repairing the open region of the data line, so that the open region of the data line can be easily repaired by a laser welding and a laser cutting without an additional process for forming an extra repair line.
Abstract
An in-plane switching mode LCD device and a method for manufacturing the same are disclosed, which can easily repair data line by forming dummy patterns to prepare an open region of data line during a process. The in-plane switching mode LCD device includes first and second substrates opposing each other and a liquid crystal layer therebetween, gate and data lines arranged to cross each other on the first substrate, a plurality of common electrodes and data electrodes for applying an electric field parallel to the substrate within a pixel region defined by the gate and data lines, and first and second dummy patterns integral with the common electrodes and respectively overlapping a portion of the data line defining the pixel region. If the data line has an open region, the data line is electrically connected with the first and second dummy patterns, while the portion of the common electrode integral with the first and second dummy patterns is insulated from the common line.
Description
- This application claims the benefit of Korean Patent Application No. 2000-50773 filed on Aug. 30, 2000, which is hereby incorporated by reference as if fully set forth herein.
- 1. Field of the Invention
- The present invention relates to a display device, and more particularly, to an in-plane switching mode liquid crystal display (LCD) device and a method for manufacturing the same.
- 2. Discussion of the Related Art
- A Cathode Ray Tube (CRT), one type of display devices, has been widely used for monitors of information terminals and measuring instruments including a television. However, it was difficult for the CRT to actively adapt to miniaturization and lightweight due to its weight and size.
- A Liquid Crystal Display (LCD) device having a thin and small size has been actively developed in order to replace the CRT. Recently, the LCD device is used as a flat panel display device. Thus, demand for the LCD device has consistently increased.
- In general, a low cost and high performance thin film transistor liquid crystal display (TFT-LCD) device uses an amorphous silicon thin film transistor as a switching device. At present, the LCD device is oriented towards a high resolution display that operates in a video graphic array (VGA) mode with the maximum resolution of 640×480 pixels, a super video graphic array (SVGA) mode of 800×600 pixels or in an extended video graphic array (XVGA) mode of 1024×768 pixels.
- Development and application of TFT-LCD industries have been accelerated in accordance with increase of the dimensions and increase of the resolution. To increase the productivity and ensure the low cost, many efforts have been continued in view of simplified process steps and improvement of yield.
- However, in spite of the trend toward a large sized area of the TFT-LCD, a problem arises in that contrast ratio depends on a viewing angle. To solve this problem, various LCDs such as a twisted nematic LCD provided with a retardation film and a multi-domain LCD have been proposed. However, a problem still arises in that contrast ratio and color depend on a viewing angle.
- To ensure a wide-viewing angle, an in-plane switching mode LCD device that controls alignment of a liquid crystal by an electric field parallel to a substrate has been proposed.
-
FIG. 1 is a plan view of a related art in-plane switching mode LCD device.FIG. 2 is a sectional view taken along line I-I′ ofFIG. 1 . - In the related art in-plane switching mode LCD device, as shown in
FIG. 1 andFIG. 2 , agate line 1 is formed on afirst substrate 10, and then acommon line 3 is formed in parallel to thegate line 1. Acommon electrode 9 extends from thecommon line 3 to a pixel region. - In addition, a gate
insulating film 12 is formed on an entire surface of the first substrate including thegate line 1, thecommon line 3, and thecommon electrode 9. - A
data line 2 crosses thegate line 1 on thegate insulating film 12, so that a plurality of pixel regions are defined. For reference,FIG. 1 shows a unit pixel. - A thin film transistor (TFT) is formed on the
gate insulating film 12 of a region where thegate line 1 crosses thedate line 2. The TFT includes gate electrode, gate insulating film, semiconductor film, and source/drain electrodes. - A
data electrode 8 is formed on thegate insulating film 12 within the pixel region. At this time, thedata electrode 8 is arranged in parallel to thecommon electrode 9, and between thecommon electrodes 9. Also, the data electrode has an overlapping portion between thecommon line 3 and thecommon electrode 9 to form a storage capacitor. Thedata electrode 8 is connected with thedrain electrode 7 of the TFT. - A
passivation film 13 is formed on thegate insulating film 12 including the TFT, thedata line 2, and thedata electrode 8. - A
color filter 21 is formed on asecond substrate 20, and aliquid crystal layer 22 is formed between the first andsecond substrates - Although not shown, polarizers are formed on external surfaces of the
substrates substrates - A method for operating the related art in-plane switching mode LCD will be described in detail.
- In the aforementioned related art in-plane switching mode LCD device, if a voltage is applied from an external driving circuit (not shown), an electric field parallel to the
substrates data electrode 8 and thecommon electrode 9. A liquid crystal molecule aligned within theliquid crystal layer 22 is rotated along the electric field parallel to the substrates. As a result, an amount of light that passes through theliquid crystal layer 22 is controlled and gray scale is displayed in a state that the liquid crystal molecule is parallel to the substrate. For this reason, the difference of light transmittance depending on a viewing angle is reduced. - However, the related art in-plane switching mode LCD device has the following problems.
- During the process, if the data line has an open region due to foreign particles, an extra repair line has to be installed by an additional process for repairing.
- It is difficult to install the extra repair line. Even though the extra repair line is installed, the process is very complicated, thereby degrading reliability of the device.
- Accordingly, the present invention is directed to an in plane switching mode LCD device that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of the present invention is to provide an in plane switching mode LCD device and a method for manufacturing the same that can easily repair data line by forming dummy patterns to prepare an open region of data line during a process.
- Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, an in-plane switching mode LCD device includes first and second substrates arranged to opposing each other; a liquid crystal layer between the first and second substrates, gate and data lines arranged to cross each other on the first substrate, a plurality of common electrodes and data electrodes for applying an electric field parallel to the first substrate within a pixel region defined by the gate and data lines, and first and second dummy patterns integral with at least one of the common electrodes respectively overlapping first and second portions of the data lines defining the pixel region.
- In another aspect of the present invention, a method for manufacturing an in-plane switching mode LCD device according to the present invention includes the steps of forming a gate line, a gate electrode, a common electrode, first and second dummy patterns integral with the common electrode, and a common line on a first substrate; forming a gate insulating film on an entire surface of the first substrate including the first and second dummy patterns and the common electrode, forming a data line crossing the gate line to partially overlap the first and second dummy patterns, forming a data electrode integral with the data line; forming a passivation film on the entire surface including the data line and the data electrode, and forming a liquid crystal layer between the first substrate and a second substrate opposite to the first substrate.
- In such an in-plane switching mode LCD device of the present invention, if a data line has an open region, it can be repaired using a common electrode. That is, when the common electrode is patterned, a dummy pattern of the common electrode material is formed to overlap the data line, so that a signal disconnected by an open region is bypassed using the dummy pattern and the common electrode, thereby forming a path for transmitting the signal.
- Generally, in a pixel unit, a gate line is long enough to have an open region. However, the data line is long enough that an open region may be caused by foreign particles during the manufacturing process. That is, in a single pixel unit, the length of the data line and the gate line are substantially the same. In an XGA, there are 768 gate lines and 1024*3 data lines. Therefore, the overall length of the data lines is greater than that of gate lines. Thus, the data lines may have a large number of open regions compared to the gate lines.
- Accordingly, the signal of the data line is bypassed through the dummy pattern which is integral with the common electrode, so that a problem of the open region can be solved.
- It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings:
-
FIG. 1 is a plan view of a related art in-plane switching mode LCD device; -
FIG. 2 is a sectional view taken along line I-I′ ofFIG. 1 ; -
FIG. 3 is a plan view of the in-plane switching mode LCD device according to the present invention; -
FIG. 4 is a sectional view taken along line II-II′ ofFIG. 3 ; -
FIG. 5 is a sectional view taken along line III-III′ ofFIG. 3 ; and -
FIG. 6A toFIG. 6D are showing manufacturing process steps of the in-plane switching mode LCD device according to the present invention. - Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrates in the accompanying drawings.
-
FIG. 3 is a plan view of the in-plane switching mode LCD device according to the present invention.FIG. 4 is a sectional view taken along line II-II′ ofFIG. 3 .FIG. 5 is a sectional view taken along line III-III′FIG. 3 . First, as shown inFIG. 3 , gate anddata lines first substrate 30. The gate anddata lines common line 35 is formed in parallel to thegate line 31 within the pixel region. A thin film transistor (TFT) is formed in a portion where thegate line 31 crosses thedata line 33. Subsequently, adata electrode 37 is formed in parallel to thedata line 33 within the pixel region, which is electrically connected with a drain electrode of the TFT. Then, acommon electrode 41 is connected with thecommon line 35 and formed in parallel to thedata electrode 37. First andsecond dummy patterns data line 33. - At this time, as shown, the
data line 33 may have an open region in the middle (“S” portion) of the data line defining a unit pixel. Accordingly, the first andsecond dummy patterns data line 33, thefirst dummy pattern 39, thecommon electrode 41, and thesecond dummy pattern 39 a. - Meanwhile, the
data electrode 37 partially overlaps thecommon line 35 and thecommon electrode 41 to form a storage capacitor. The degree of overlap between thedummy pattern 39 and thedata line 33 is determined by the degree of load of the data line according to a predetermined model. For reference,FIG. 3 shows a unit pixel. - A sectional structure of the in-plane switching mode LCD device is shown in
FIG. 4 toFIG. 5 . - The gate line 31 (not shown in
FIG. 4 ) is formed in one direction on thefirst substrate 30, and thencommon line 35 is formed in parallel to thegate line 31. At this time, thefirst dummy pattern 39 is formed to be extended to a portion of thedata line 33, and thecommon electrode 41 is formed integrally with thefirst dummy pattern 39. - The
gate insulating film 43 is formed on the entire surface of the first substrate including thegate line 31, thecommon electrode 41, the first andsecond dummy patterns common line 35. Thedata line 33 crosses thegate line 31 to partially overlap thefirst dummy pattern 39 on thegate insulating film 43. Then, thedata electrode 37 is formed on thegate insulating film 43 within the pixel region, and thepassivation film 38 is formed on the entire surface of the first substrate including thedata electrode 37 and thedata line 33. - The first and
second dummy patterns common electrode 41, which is generally formed of a transparent conductive material such as an Indium Tin Oxide (ITO). And the outmost common electrode may be formed of metal or of ITO on the above. Also, thecommon electrode 41 is electrically connected with thecommon line 35 on thefirst substrate 30. Thedata electrode 37 is formed on thegate insulating film 43, and, at the same time, source/drain electrodes are formed on thegate insulating film 43. Then, thedata electrode 37 is connected with the drain electrode. - On the
second substrate 50, a light shielding layer (not shown) and acolor filter layer 51 are formed. The light shielding layer is to shield light leaked from the TFT, the gate line and the data line. Thecolor filter layer 51 is to display colors. Then, theliquid crystal layer 53 is formed between the first andsecond substrates substrates substrate - In such an in-plane switching mode LCD device according to the present invention, if the data line has an open region (“S” portion of
FIG. 3 ), thedata line 33 is electrically connected with the first and second dummy patterns by a laser welding (“T” and “U” portions ofFIG. 3 ), while a portion (“V” and “W” portions) connected with thecommon line 35 among thecommon electrode 41 is cut off by a laser, thereby electrically insulating thecommon electrode 41 from thecommon line 35. - Accordingly, video signals applied from a driving circuit are transmitted through a path in the order of the
data line 33, thefirst dummy pattern 39, thecommon electrode 41 disconnected from thecommon line 35, thesecond dummy pattern 39 a, and thedata line 33. - A method for manufacturing the in-plane switching mode LCD device of the present invention will be described with reference to
FIG. 6A toFIG. 6D . For reference, sectional views shown inFIG. 6A toFIG. 6D are taken along line II-II′ ofFIG. 3 . - First, as shown in
FIG. 6A , a conductive material such as Al, Mo, Ta, Al alloy or ITO is formed on thefirst substrate 30 by a sputtering process, and then thegate line 31, the gate electrode, thecommon electrode 41 and thecommon line 35 are formed by a photolithography process. At this time, thecommon line 35 is formed in parallel to the gate line 3 i. Thecommon electrode 41 is formed integrally with the first andsecond dummy patterns data line 33 will be formed to overlap with thedata line 33 at a predetermined portion. That is, the first andsecond dummy patterns common electrode 41. The first andsecond dummy patterns common electrode 41 by the photolithography process. - As show in
FIG. 6B , thegate insulating film 43 of SiNx or SiOx is formed on an entire surface of thefirst substrate 30 including thecommon electrode 41 and thegate line 31 by a plasma chemical vapor deposition (CVD) process. - As shown in
FIG. 6C , a metal such as Al, Cr, Ti, and Al alloy is formed on thegate insulating film 43, and then crosses thegate line 31 by the photolithography process. Also,data line 33 is formed to overlap the first andsecond dummy patterns data electrode 37 is formed substantially in parallel to thedata line 33 within the pixel region. - As shown in
FIG. 6D , apassivation film 38 is of an inorganic material such as SiNx and SiOx or an organic material such as Benzocyclobutene (BCB) and Acryl is formed on the entire surfaces including thedata line 33 and thedata electrode 37. After that, the liquid crystal layer is injected between thesecond substrate 50 and thefirst substrate 30, so that the manufacturing process steps are completed. - Additionally, it is possible to form the alignment film on the first and
second substrates second substrates second substrates - According to the in-plane switching mode LCD device of the present invention and the method for manufacturing the same, if the
data line 33 has the open region, the portion that thedata line 33 is overlapped with the first andsecond dummy patterns common electrode 41 formed integral with the first andsecond dummy patterns common line 35 by a laser cutting. Accordingly, once the open region of the data line is generated, a signal path is bypassed in the order of thedata line 33, thefirst dummy pattern 39, the common electrode 41 (electrically disconnected from the common line), thesecond dummy pattern 39 a, and thedata line 33, thereby repairing the open region of the data line. - As aforementioned, in the in-plane switching mode LCD device and the method for manufacturing the same according to the present invention, the dummy patterns are formed in a single body with the common electrode to overlap the data line during forming the common electrode for repairing the open region of the data line, so that the open region of the data line can be easily repaired by a laser welding and a laser cutting without an additional process for forming an extra repair line.
- The forgoing embodiments are merely exemplary and are not to be construed as limiting the present invention. The present teachings can be readily applied to other types of apparatuses. The description of the present invention is intended to be illustrative, and not to limit the scope of the claims. Many alternatives, modifications, and variations will be apparent to those skilled in the art.
Claims (9)
1-11. (canceled)
12. A method for manufacturing an in-plane switching mode liquid crystal display device comprising:
forming a gate line, a gate electrode, a common electrode, at least one dummy pattern, and a common line on a first substrate;
forming a gate insulating film on an entire surface of the first substrate;
forming a data line crossing the gate line to partially overlap the dummy pattern;
forming a data electrode integral with the data line;
forming a passivation film on the entire surface of the first substrate including the data line and the data electrode; and
forming a liquid crystal layer between the first substrate and a second substrate opposite to the first substrate.
13. The method as claimed in claim 12 , further comprising forming a common line in parallel to the gate line.
14. The method as claimed in claim 12 , further comprising electrically connecting the data line with the dummy pattern.
15. The method as claimed in claim 14 , wherein the overlapped portion between the data line and the dummy pattern is electrically connected with the data line.
16. The method as claimed in claim 12 , further comprising electrically insulating a portion of the common electrode from the common line.
17. The method as claimed in claim 16 , wherein the dummy pattern is integral with the common electrode.
18. The method as claimed in claim 12 , wherein the common electrode and the dummy pattern are formed of a transparent conductive material.
19. The method as claimed in claim 18 , wherein the transparent conductive material includes indium tin oxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/268,501 US20060050219A1 (en) | 2000-08-30 | 2005-11-08 | Method for manufacturing an in plane switching mode liquid crystal display device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020000050773A KR100587366B1 (en) | 2000-08-30 | 2000-08-30 | In-plane switching mode liquid crystal display device and method for manufacturing the same |
KR10-2000-50773 | 2000-08-30 | ||
US09/940,544 US7034903B2 (en) | 2000-08-30 | 2001-08-29 | In plane switching mode liquid crystal display device and method for manufacturing the same |
US11/268,501 US20060050219A1 (en) | 2000-08-30 | 2005-11-08 | Method for manufacturing an in plane switching mode liquid crystal display device |
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US09/940,544 Division US7034903B2 (en) | 2000-08-30 | 2001-08-29 | In plane switching mode liquid crystal display device and method for manufacturing the same |
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US20060050219A1 true US20060050219A1 (en) | 2006-03-09 |
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US09/940,544 Expired - Lifetime US7034903B2 (en) | 2000-08-30 | 2001-08-29 | In plane switching mode liquid crystal display device and method for manufacturing the same |
US11/004,103 Expired - Lifetime US7271868B2 (en) | 2000-08-30 | 2004-12-06 | Plane switching mode liquid crystal display device and method for manufacturing the same |
US11/268,501 Abandoned US20060050219A1 (en) | 2000-08-30 | 2005-11-08 | Method for manufacturing an in plane switching mode liquid crystal display device |
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US09/940,544 Expired - Lifetime US7034903B2 (en) | 2000-08-30 | 2001-08-29 | In plane switching mode liquid crystal display device and method for manufacturing the same |
US11/004,103 Expired - Lifetime US7271868B2 (en) | 2000-08-30 | 2004-12-06 | Plane switching mode liquid crystal display device and method for manufacturing the same |
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KR (1) | KR100587366B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US7271868B2 (en) | 2007-09-18 |
KR100587366B1 (en) | 2006-06-08 |
US20050094081A1 (en) | 2005-05-05 |
US7034903B2 (en) | 2006-04-25 |
US20020047977A1 (en) | 2002-04-25 |
KR20020017437A (en) | 2002-03-07 |
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