US20060033188A1 - Electronic component packaging - Google Patents

Electronic component packaging Download PDF

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Publication number
US20060033188A1
US20060033188A1 US11/011,426 US1142604A US2006033188A1 US 20060033188 A1 US20060033188 A1 US 20060033188A1 US 1142604 A US1142604 A US 1142604A US 2006033188 A1 US2006033188 A1 US 2006033188A1
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United States
Prior art keywords
lid
sealing surface
electronic component
package
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US11/011,426
Inventor
Chien-Hua Chen
Troy Schwinabart
David Craig
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Hewlett Packard Development Co LP
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Hewlett Packard Development Co LP
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Priority to US11/011,426 priority Critical patent/US20060033188A1/en
Assigned to HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. reassignment HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CRAIG, DAVID M., CHEN, CHIEN-HUA, SCHWINABART, TROY D.
Publication of US20060033188A1 publication Critical patent/US20060033188A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • Electronic components such as microelectrical mechanical systems (MEMS) may be encapsulated within a package to protect the electronic component from environmental hazards such as humidity, electrical interference, dust, physical contact, and the like. Providing a hermetically sealed atmosphere for the electronic component within a package maybe reduce the effect of such environmental hazards.
  • Some sealing materials used to seal electronic component packages may degrade the life or operation of the component or may result in a non-hermetic seal.
  • Other sealing methods may require the package to undergo heating to a temperature that may damage the electronic components or may create a mis-match between the coefficient of thermal expansion of the package lid and the container. This may stress the electronic component or may result in a failure of the seal between the container and the lid.
  • Still other sealing methods may require welding or high compression forces that are not suited for certain types of packaging materials such as glass or ceramics.
  • FIG. 1 is a schematic cross-sectional side view of one embodiment of a container.
  • FIG. 2 is a schematic side view of one embodiment of a polishing device.
  • FIG. 3 is a schematic cross-sectional side view of one embodiment of an electronic component mounted on one embodiment of a container
  • FIG. 4 is a schematic cross-sectional side view of one embodiment of a process of plasma activating one embodiment of a container and a lid.
  • FIG. 5 is a schematic cross-sectional side view of one embodiment of a process of sealing one embodiment of a container and a lid.
  • FIG. 6 is a schematic cross-sectional side view of one embodiment of a sealed container and a lid.
  • FIG. 7 is a schematic perspective view of another embodiment of a sealed container and a lid.
  • FIG. 8 is a schematic cross-sectional side view of another embodiment of a sealed container and a lid.
  • FIG. 1 is a schematic cross-sectional side view of one embodiment of a container 10 .
  • Container 10 may include a support surface 12 for receiving an electronic component, such as a microelectronic device 14 (see FIG. 3 ) thereon, and a sealing surface 16 that may extend around a perimeter 18 of container 10 .
  • Container 10 may further include connection pins 20 on an underside thereof for accessing microelectronic device 14 (see FIG. 3 ) when the microelectronic device is mounted on container 10 .
  • Container 10 may be manufactured of metal, a metal alloy, ceramic, plastic, silicon, glass, or any other suitable material.
  • FIG. 2 is a schematic side view of one embodiment of a polishing device 22 .
  • Polishing device 22 may include a sample holder 24 that may hold a plurality of containers 10 such that sealing surfaces 16 of the containers 10 may be positioned facing downwardly in a direction 25 .
  • Device 22 may further include a polishing structure, such as a polishing wheel 26 , that may rotate about a drive shaft 28 in a direction 30 .
  • Polishing wheel 26 may include a polyurethane polishing pad attached to a rigid platen and may be powered by a motor (not shown) so as to rotate at speeds of approximately 100 rpm or more.
  • a polishing solution such as a slurry 32 of silica particles in a potassium hydroxide (KOH) solution may be placed on a polishing surface 34 of polishing wheel 26 .
  • Holder 24 may be positioned above polishing surface 34 such that when holder 24 is lowered, sealing surfaces 16 of containers 10 may be mechanically planarized, such as being polished, by polishing surface 34 of polishing wheel 26 with slurry 32 thereon.
  • sealing surfaces 16 are polished to a smoothness of at most a 20 Angstroms root mean square (rms) surface roughness over a 2 micrometer by 2 micrometer area.
  • rms Angstroms root mean square
  • FIG. 3 is a schematic cross-sectional side view of one embodiment of a microelectronic device 14 mounted on container 10 .
  • Microelectronic device 14 in the exemplary embodiment may comprise a microelectrical mechanical system (MEMS) chip but in other embodiments may comprise any type of microelectronic structure.
  • Microelectronic device 14 may be secured to container 10 on support surface 12 by any known method and may include electrical connection structure, such as wires 36 , so that device 14 is in electrical communication with connection pins 20 . Accordingly, after a lid 38 (see FIG. 4 ) is secured to container 10 so as to enclose device 14 therein, the device 14 may still be electronically accessed from an exterior of the device packaging 40 (see FIG. 6 ).
  • MEMS microelectrical mechanical system
  • FIG. 4 is a schematic cross-sectional side view of one embodiment of a process of plasma activating one embodiment of container 10 and lid 38 .
  • Lid 38 may be manufactured of metal, a metal alloy, ceramic, plastic, silicon, glass, or any other suitable material. Lid 38 may include a sealing surface 46 that may extend around a perimeter 48 of the lid.
  • the process may include enclosing container 10 and lid 38 in an enclosure 42 and then filling or creating within enclosure 42 a plasma atmosphere 44 by the addition of energy at a radio frequency in the range of 10 kHz to 14 MHz.
  • Plasma atmosphere 44 may be formed of nitrogen, oxygen, argon, a mixture thereof, or any other suitable component or components.
  • the sealing surfaces can be activated under an ambient plasma with air, nitrogen, oxygen, or other suitable gas. Subjecting container 10 and lid 38 to plasma atmosphere 44 may activate sealing surface 46 of lid 38 and sealing surface 16 of container 10 so that the sealing surfaces will form a covalent bond therebetween when corresponding sealing surfaces 46 and 16 are positioned in contact with one another.
  • Exposure of container 10 and lid 38 to plasma atmosphere 44 may be conducted at any temperature or pressure suitable to activate the sealing surfaces but in one exemplary embodiment, the pressure within enclosure 42 may be in a range of 50 mtorr to 1 atmosphere and the temperature within enclosure 42 may be in a range of 25 to 100 degrees Celsius, wherein container 10 and lid 38 may be exposed to plasma atmosphere 44 for a time period in a range of 10 to 100 seconds.
  • the process may include hydrating the sealing surface 46 of lid 38 or sealing surface 16 of container 10 .
  • the hydration process can be done with water plasma in a plasma chamber under vacuum, or in an open environment under an ambient water plasma.
  • a trace of water vapor, such as vaporized deionized water can be drawn into the process gas, such as nitrogen, oxygen, or argon, to form a water plasma.
  • the hydration process results in a higher density of silanol groups on the sealing surface 46 of lid 38 and sealing surface 16 of container 10 so that the sealing surfaces will form a strong covalent bond therebetween when corresponding sealing surfaces 46 and 16 are positioned in contact with one another.
  • the container and the lid may each be manufactured of a unique material.
  • a glass or a silicon lid 38 may be bonded to a ceramic container 10 at a temperature of at most 100 degrees Celsius at ambient pressure to form a hermetic seal therebetween.
  • FIG. 5 is a schematic cross-sectional side view of one embodiment of a process of sealing one embodiment of container 10 and lid 38 .
  • a buffer layer such as a bonding layer 50 may be positioned on sealing surface 16 of container 10 around perimeter 18 of the container.
  • Bonding layer 50 may be manufactured of oxide, glass frit, amorphous silicon, or any other suitable material or mixtures thereof, and may be deposited by any suitable means such as chemical vapor deposition, sputtering or the like.
  • Bonding layer 50 generally is manufactured of a non-epoxy, non-solder, and non-organic material because these excluded materials may not form a hermetic seal and may degrade the life or performance of microelectronic device 14 .
  • Lid 38 and container 10 are then plasma activated and hydrated to prepare the sealing surfaces 50 a and 46 for covalent bonding.
  • Lid 38 is then contacted with container 10 such that sealing surface 46 of lid 38 contacts bonding layer 50 of container 10 so as to form a hermetic seal of covalent bonding around perimeter 18 of container 10 and around perimeter 48 of lid 38 , wherein the perimeter of the base substantially mates in size and shape with the perimeter of the lid.
  • an exposed mating surface of container 10 which may comprise an exposed surface 50 a of bonding layer 50 , is contacted with an exposed mating surface 46 of lid 38 to form a bond therebetween.
  • the perimeter of each of container 10 and lid 38 may be round, square, rectangular, oval, or any shape as desired.
  • a light compression force such as a force of approximately 50 Newtons, may be applied to hold container 10 and lid 38 together for a sufficient time, such as a time period of approximately 10 seconds, for container 10 and lid 38 to seal to one another.
  • the contacting may be conducted at a pressure in a range of approximately 100 mtorr to 1 atmosphere, and at a temperature in a range of approximately 25 to 200 degrees Celsius. Because the contacting pressure and temperature are relatively low, the package may be sealed with substantially no mis-match between the coefficient of thermal expansion of the lid and the container and with substantially no heating of the microelectronic device to a temperature that may damage the electronic component.
  • bonding layer 50 may be positioned on sealing surface 16 of container 10 after polishing of sealing surface 16 .
  • bonding layer 50 may be positioned on sealing surface 16 without polishing of the sealing surface.
  • bonding layer 50 is not polished prior to contact with lid 38 .
  • the exposed surface of bonding layer 50 may be planarized or polished on polishing wheel 26 (see FIG. 2 ) by placement of container 10 in holder 24 (see FIG. 2 ).
  • a bonding layer 50 may be positioned on both of container 10 and lid 38 , or only on lid 38 , wherein the sealing surfaces of the container and lid, and the exposed surface of the bonding layer or layers may or may not be polished prior to contact therewith.
  • FIG. 6 is a schematic cross-sectional side view of one embodiment of container 10 and lid 38 sealed together to form a package 52 having an airtight seal, such as a hermetic seal 54 , of covalent bonding around a perimeter 56 thereof.
  • seal 54 may comprise other types or methods of bonding.
  • Package 52 defines an enclosed interior atmosphere 58 in which microelectronic device 14 is positioned.
  • Interior atmosphere 58 may include a desiccant 60 , which may be secured to an underside of lid 38 , wherein desiccant 60 may reduce the humidity within interior atmosphere 58 .
  • Hermetic seal 54 provides some protection of microelectronic device 14 from environmental conditions outside package 52 such as humidity, electrical interference, dust, physical contact, and the like.
  • Lid 38 may include a coating 62 on an upper side thereof which may function as an aperture for an optical MEMS device.
  • FIG. 7 is a schematic perspective view of another embodiment of a sealed container 10 and a lid 38 that defines a cylindrical shaped package 52 .
  • package 52 includes two connection pins 20 and a lid 38 having a height 64 greater than a height 66 of container 10 .
  • any dimensions may be utilized for the package of the present invention.
  • FIG. 8 is a schematic cross-sectional side view of another embodiment of a sealed container 10 and a lid 38 that define a package 52 having a hermetic seal 54 .
  • wires 36 are connected horizontally to connection pins 20 that extend through container 10 to an exterior of package 52 .
  • This embodiment does not include a desiccant 60 or a bonding layer 50 .

Abstract

One embodiment of an electronic component packaging system includes a base adapted for supporting an electronic component and including a mechanically planarized sealing surface, and a lid including a mechanically planarized sealing surface sealed to the planarized sealing surface of the base so as to define a hermetic seal therebetween.

Description

  • This application is a continuation-in-part of commonly assigned U.S. patent application Ser. No. 10/917,807, filed Aug. 13, 2004, and is hereby incorporated by reference.
    • BACKGROUND
  • Electronic components, such as microelectrical mechanical systems (MEMS), may be encapsulated within a package to protect the electronic component from environmental hazards such as humidity, electrical interference, dust, physical contact, and the like. Providing a hermetically sealed atmosphere for the electronic component within a package maybe reduce the effect of such environmental hazards. Some sealing materials used to seal electronic component packages may degrade the life or operation of the component or may result in a non-hermetic seal. Other sealing methods may require the package to undergo heating to a temperature that may damage the electronic components or may create a mis-match between the coefficient of thermal expansion of the package lid and the container. This may stress the electronic component or may result in a failure of the seal between the container and the lid. Still other sealing methods may require welding or high compression forces that are not suited for certain types of packaging materials such as glass or ceramics.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic cross-sectional side view of one embodiment of a container.
  • FIG. 2 is a schematic side view of one embodiment of a polishing device.
  • FIG. 3 is a schematic cross-sectional side view of one embodiment of an electronic component mounted on one embodiment of a container
  • FIG. 4 is a schematic cross-sectional side view of one embodiment of a process of plasma activating one embodiment of a container and a lid.
  • FIG. 5 is a schematic cross-sectional side view of one embodiment of a process of sealing one embodiment of a container and a lid.
  • FIG. 6 is a schematic cross-sectional side view of one embodiment of a sealed container and a lid.
  • FIG. 7 is a schematic perspective view of another embodiment of a sealed container and a lid.
  • FIG. 8 is a schematic cross-sectional side view of another embodiment of a sealed container and a lid.
    • DETAILED DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic cross-sectional side view of one embodiment of a container 10. Container 10 may include a support surface 12 for receiving an electronic component, such as a microelectronic device 14 (see FIG. 3) thereon, and a sealing surface 16 that may extend around a perimeter 18 of container 10. Container 10 may further include connection pins 20 on an underside thereof for accessing microelectronic device 14 (see FIG. 3) when the microelectronic device is mounted on container 10. Container 10 may be manufactured of metal, a metal alloy, ceramic, plastic, silicon, glass, or any other suitable material.
  • FIG. 2 is a schematic side view of one embodiment of a polishing device 22. Polishing device 22 may include a sample holder 24 that may hold a plurality of containers 10 such that sealing surfaces 16 of the containers 10 may be positioned facing downwardly in a direction 25. Device 22 may further include a polishing structure, such as a polishing wheel 26, that may rotate about a drive shaft 28 in a direction 30. Polishing wheel 26 may include a polyurethane polishing pad attached to a rigid platen and may be powered by a motor (not shown) so as to rotate at speeds of approximately 100 rpm or more. A polishing solution, such as a slurry 32 of silica particles in a potassium hydroxide (KOH) solution may be placed on a polishing surface 34 of polishing wheel 26. Holder 24 may be positioned above polishing surface 34 such that when holder 24 is lowered, sealing surfaces 16 of containers 10 may be mechanically planarized, such as being polished, by polishing surface 34 of polishing wheel 26 with slurry 32 thereon. In one embodiment, sealing surfaces 16 are polished to a smoothness of at most a 20 Angstroms root mean square (rms) surface roughness over a 2 micrometer by 2 micrometer area. Of course, other polishing and/or planarizing structures or methods may be utilized to smooth or planarize sealing surfaces 16 of containers 10.
  • FIG. 3 is a schematic cross-sectional side view of one embodiment of a microelectronic device 14 mounted on container 10. Microelectronic device 14 in the exemplary embodiment may comprise a microelectrical mechanical system (MEMS) chip but in other embodiments may comprise any type of microelectronic structure. Microelectronic device 14 may be secured to container 10 on support surface 12 by any known method and may include electrical connection structure, such as wires 36, so that device 14 is in electrical communication with connection pins 20. Accordingly, after a lid 38 (see FIG. 4) is secured to container 10 so as to enclose device 14 therein, the device 14 may still be electronically accessed from an exterior of the device packaging 40 (see FIG. 6).
  • FIG. 4 is a schematic cross-sectional side view of one embodiment of a process of plasma activating one embodiment of container 10 and lid 38. Lid 38 may be manufactured of metal, a metal alloy, ceramic, plastic, silicon, glass, or any other suitable material. Lid 38 may include a sealing surface 46 that may extend around a perimeter 48 of the lid.
  • The process may include enclosing container 10 and lid 38 in an enclosure 42 and then filling or creating within enclosure 42 a plasma atmosphere 44 by the addition of energy at a radio frequency in the range of 10 kHz to 14 MHz. Plasma atmosphere 44 may be formed of nitrogen, oxygen, argon, a mixture thereof, or any other suitable component or components. As an alternative, the sealing surfaces can be activated under an ambient plasma with air, nitrogen, oxygen, or other suitable gas. Subjecting container 10 and lid 38 to plasma atmosphere 44 may activate sealing surface 46 of lid 38 and sealing surface 16 of container 10 so that the sealing surfaces will form a covalent bond therebetween when corresponding sealing surfaces 46 and 16 are positioned in contact with one another. Exposure of container 10 and lid 38 to plasma atmosphere 44 may be conducted at any temperature or pressure suitable to activate the sealing surfaces but in one exemplary embodiment, the pressure within enclosure 42 may be in a range of 50 mtorr to 1 atmosphere and the temperature within enclosure 42 may be in a range of 25 to 100 degrees Celsius, wherein container 10 and lid 38 may be exposed to plasma atmosphere 44 for a time period in a range of 10 to 100 seconds.
  • The process may include hydrating the sealing surface 46 of lid 38 or sealing surface 16 of container 10. The hydration process can be done with water plasma in a plasma chamber under vacuum, or in an open environment under an ambient water plasma. A trace of water vapor, such as vaporized deionized water, can be drawn into the process gas, such as nitrogen, oxygen, or argon, to form a water plasma. The hydration process results in a higher density of silanol groups on the sealing surface 46 of lid 38 and sealing surface 16 of container 10 so that the sealing surfaces will form a strong covalent bond therebetween when corresponding sealing surfaces 46 and 16 are positioned in contact with one another. Due to the plasma activation and hydration process of the sealing surfaces of container 10 and lid 38, the container and the lid may each be manufactured of a unique material. For example, due to the plasma activation and hydration process, a glass or a silicon lid 38 may be bonded to a ceramic container 10 at a temperature of at most 100 degrees Celsius at ambient pressure to form a hermetic seal therebetween.
  • FIG. 5 is a schematic cross-sectional side view of one embodiment of a process of sealing one embodiment of container 10 and lid 38. In this exemplary embodiment, after planarizing sealing surface 16 of container 10, a buffer layer, such as a bonding layer 50 may be positioned on sealing surface 16 of container 10 around perimeter 18 of the container. Bonding layer 50 may be manufactured of oxide, glass frit, amorphous silicon, or any other suitable material or mixtures thereof, and may be deposited by any suitable means such as chemical vapor deposition, sputtering or the like. Bonding layer 50 generally is manufactured of a non-epoxy, non-solder, and non-organic material because these excluded materials may not form a hermetic seal and may degrade the life or performance of microelectronic device 14.
  • Lid 38 and container 10 are then plasma activated and hydrated to prepare the sealing surfaces 50 a and 46 for covalent bonding. Lid 38 is then contacted with container 10 such that sealing surface 46 of lid 38 contacts bonding layer 50 of container 10 so as to form a hermetic seal of covalent bonding around perimeter 18 of container 10 and around perimeter 48 of lid 38, wherein the perimeter of the base substantially mates in size and shape with the perimeter of the lid. In other words, an exposed mating surface of container 10, which may comprise an exposed surface 50 a of bonding layer 50, is contacted with an exposed mating surface 46 of lid 38 to form a bond therebetween. The perimeter of each of container 10 and lid 38 may be round, square, rectangular, oval, or any shape as desired. A light compression force, such as a force of approximately 50 Newtons, may be applied to hold container 10 and lid 38 together for a sufficient time, such as a time period of approximately 10 seconds, for container 10 and lid 38 to seal to one another. The contacting may be conducted at a pressure in a range of approximately 100 mtorr to 1 atmosphere, and at a temperature in a range of approximately 25 to 200 degrees Celsius. Because the contacting pressure and temperature are relatively low, the package may be sealed with substantially no mis-match between the coefficient of thermal expansion of the lid and the container and with substantially no heating of the microelectronic device to a temperature that may damage the electronic component.
  • Still referring to FIG. 5, in the embodiment shown, bonding layer 50 may be positioned on sealing surface 16 of container 10 after polishing of sealing surface 16. However, in other embodiments, bonding layer 50 may be positioned on sealing surface 16 without polishing of the sealing surface. In the embodiment shown, bonding layer 50 is not polished prior to contact with lid 38. However, in another embodiment, after bonding layer 50 has been positioned on sealing surface 16, the exposed surface of bonding layer 50 may be planarized or polished on polishing wheel 26 (see FIG. 2) by placement of container 10 in holder 24 (see FIG. 2). In other embodiments, a bonding layer 50 may be positioned on both of container 10 and lid 38, or only on lid 38, wherein the sealing surfaces of the container and lid, and the exposed surface of the bonding layer or layers may or may not be polished prior to contact therewith.
  • FIG. 6 is a schematic cross-sectional side view of one embodiment of container 10 and lid 38 sealed together to form a package 52 having an airtight seal, such as a hermetic seal 54, of covalent bonding around a perimeter 56 thereof. In another embodiment, seal 54 may comprise other types or methods of bonding. Package 52 defines an enclosed interior atmosphere 58 in which microelectronic device 14 is positioned. Interior atmosphere 58 may include a desiccant 60, which may be secured to an underside of lid 38, wherein desiccant 60 may reduce the humidity within interior atmosphere 58. Hermetic seal 54 provides some protection of microelectronic device 14 from environmental conditions outside package 52 such as humidity, electrical interference, dust, physical contact, and the like. Lid 38 may include a coating 62 on an upper side thereof which may function as an aperture for an optical MEMS device.
  • FIG. 7 is a schematic perspective view of another embodiment of a sealed container 10 and a lid 38 that defines a cylindrical shaped package 52. In this embodiment, package 52 includes two connection pins 20 and a lid 38 having a height 64 greater than a height 66 of container 10. Of course, any dimensions may be utilized for the package of the present invention.
  • FIG. 8 is a schematic cross-sectional side view of another embodiment of a sealed container 10 and a lid 38 that define a package 52 having a hermetic seal 54. In this embodiment, wires 36 are connected horizontally to connection pins 20 that extend through container 10 to an exterior of package 52. This embodiment does not include a desiccant 60 or a bonding layer 50.
  • Other variations and modifications of the concepts described herein may be utilized and fall within the scope of the claims below.

Claims (52)

1. An electronic component packaging system, comprising:
a base adapted for supporting an electronic component and including a mechanically planarized sealing surface; and
a lid including a mechanically planarized sealing surface sealed to said planarized sealing surface of said base so as to define a hermetic seal therebetween.
2. The system of claim 1 wherein said hermetic seal comprises covalent bonding.
3. The system of claim 1 further comprising a non-solder bonding layer positioned between said planarized sealing surface of said base and said planarized sealing surface of said lid.
4. The system of claim 1 wherein said lid and said base are each chosen from one of a metal, a metal alloy, ceramic, plastic, silicon, and glass.
5. The system of claim 1 wherein said hermetic seal is created with a hydration enhanced bonding process.
6. The system of claim 1 wherein said electronic component is a MEMS die.
7. The system of claim 1 wherein said planarized sealing surface of said base and said planarized sealing surface of said lid each have a smoothness of at most a 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.
8. The system of claim 3 wherein said bonding layer is chosen from one of oxide, glass frit, and amorphous silicon.
9. The system of claim 1 wherein said hermetic seal is created with a plasma enhanced bonding process.
10. The system of claim 1 wherein said base and said lid hermetically seal said electronic component.
11. The system of claim 1 wherein said planarized sealing surface of said base extends around a perimeter of said base and said planarized sealing surface of said lid extends around a perimeter of said lid, and wherein said perimeter of said base substantially mates in size and shape with said perimeter of said lid.
12. A process of plasma bonding an electronic component package, comprising:
activating an electronic component container sealing surface and a lid sealing surface with a plasma; and
contacting the electronic component container sealing surface and the lid sealing surface to form a hermetic seal.
13. The process of claim 12 further comprising, prior to said activating, depositing a bonding layer on said electronic component container sealing surface.
14. The process of claim 12 further comprising, prior to said activating, polishing said electronic component container sealing surface.
15. The process of claim 12 further comprising, prior to said activating, attaching said electronic component to said electronic component container.
16. The process of claim 12 further comprising, prior to said activating, depositing a bonding layer on said lid sealing surface.
17. The process of claim 12 further comprising, prior to said activating, polishing said lid sealing surface.
18. The process of claim 12 wherein said contacting is conducted at a temperature of less than 200 degrees Celsius.
19. The process of claim 12 wherein said plasma is chosen from one of nitrogen, oxygen, argon and a mixture thereof.
20. The process of claim 14 wherein said polishing said electronic component container sealing surface is conducted to a smoothness of at most 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.
21. The process of claim 17 wherein said polishing said lid sealing surface is conducted to a smoothness of at most 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.
22. The process of claim 14 wherein said polishing is conducted with a slurry on a polishing wheel.
23. The process of claim 17 wherein said polishing is conducted with a slurry on a polishing wheel.
24. The process of claim 12 further comprising, prior to said activating, attaching an electronic component to said electronic component container.
25. The process of claim 12 wherein said process is conducted at atmospheric pressure.
26. The process of claim 12 wherein said process is conducted in a vacuum.
27. The process of claim 2 further comprising, prior to said contacting, hydrating at leas one of said container sealing surface and said lid sealing surface with a water plasma.
28. An electronic component package, comprising:
a lid;
a container adapted for supporting an electronic component; and
a non-solder bonding layer that bonds said lid and said container together.
29. The package of claim 28 wherein said bonding layer defines a hermetic seal between said lid and said container.
30. The package of claim 28 wherein said bonding layer comprises a non-organic and a non-epoxy material.
31. The package of claim 28 wherein said lid and said container are each chosen from one of a metal, a metal alloy, ceramic, plastic, silicon, and glass.
32. The package of claim 28 further comprising an electronic die sealed between said lid and said container.
33. The package of claim 28 wherein said non-solder bonding layer includes a planarized bonding surface.
34. The package of claim 28 wherein said bonding layer is plasma activated prior to bonding said lid and said container together, said plasma activation chosen from one of activation inside a plasma chamber and activation under ambient plasma conditions.
35. The package of claim 28 wherein said bonding layer is hydrated prior to bonding said lid and said container together, wherein said hydration is chosen from one of hydration in deionized water and hydration in a water plasma.
36. The package of claim 28 wherein said bonding layer is chosen from one of oxide, glass frit, and amorphous silicon.
37. A process of sealing an electronic component package, comprising:
contacting a sealing surface of a first package structure to a sealing surface of a second package structure at a temperature of less than 200 degrees Celsius so as to form a hermetic seal between said first and second package structures.
38. The process of claim 37 further comprising, prior to said contacting, hydrating one of said sealing surface of said first package structure and said sealing surface of said second package structure.
39. The process of claim 37 further comprising, prior to said contacting, plasma activating said sealing surface of said first package structure and said sealing surface of said second package structure.
40. The process of claim 37 further comprising, prior to said contacting, polishing said sealing surface of said first package structure and said sealing surface of said second package structure.
41. The process of claim 37 wherein said sealing surface of said first package structure comprises an exposed surface of a bonding material on said first package structure.
42. The process of claim 37 wherein said process is conducted at a temperature of at most 100 degrees Celsius.
43. The process of claim 37 wherein said hermetic seal comprises covalent bonding.
44. A method of sealing an electronic package, comprising:
applying a sealing material to at least one of a cap and a base;
mechanically planarizing a mating surface of said cap and a mating surface of said base; and
contacting said mating surface of said cap and said mating surface of said base such that said sealing material seals said cap and said base together.
45. The method of claim 44 wherein said sealing material is positioned on said cap and wherein said mating surface of said cap comprises an exposed surface of said sealing material on said cap.
46. The method of claim 44 wherein said sealing material is positioned on said base and wherein said mating surface of said base comprises an exposed surface of said sealing material on said base.
47. The method of claim 44 wherein said sealing material is a non-epoxy, non-solder, non-organic material.
48. The method of claim 44 wherein said cap and said base are hermetically sealed together.
49. The method of claim 44 wherein said process takes place at atmospheric pressure and ambient temperature.
50. The method of claim 44 further comprising, prior to said contacting, plasma activating said mating surface of said cap and said mating surface of said base.
51. The method of claim 44 further comprising, prior to said contacting, hydrating at least one of said mating surface of said cap and said mating surface of said base.
52. An electronic device package, comprising:
means for mounting an electronic device; and
means for capping said means for mounting, said means for capping hermetically sealed to said means for mounting by a plasma activated seal.
US11/011,426 2004-08-13 2004-12-14 Electronic component packaging Abandoned US20060033188A1 (en)

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US10935739B2 (en) 2012-07-06 2021-03-02 Micron Technology, Inc. Methods and systems for hermetically sealed fiber to chip connections
US11536915B2 (en) 2012-07-06 2022-12-27 Micron Technology, Inc. Methods and systems for hermetically sealed fiber to chip connections
US11469150B2 (en) 2020-03-18 2022-10-11 Japan Aviation Electronics Industry, Limited Device and forming method of device
TWI759064B (en) * 2020-08-03 2022-03-21 日商日本航空電子工業股份有限公司 Seal device and forming method of the device
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WO2006020439A2 (en) 2006-02-23
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US7261793B2 (en) 2007-08-28
TW200607751A (en) 2006-03-01
US20070272349A1 (en) 2007-11-29
US20060032582A1 (en) 2006-02-16
TWI372723B (en) 2012-09-21
JP2008513975A (en) 2008-05-01
WO2006020439A3 (en) 2006-08-31
EP1787322B1 (en) 2011-06-29

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