US20050252649A1 - Leadless lower temperature co-crystal phase transition metal heat conductive device - Google Patents

Leadless lower temperature co-crystal phase transition metal heat conductive device Download PDF

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Publication number
US20050252649A1
US20050252649A1 US10/842,347 US84234704A US2005252649A1 US 20050252649 A1 US20050252649 A1 US 20050252649A1 US 84234704 A US84234704 A US 84234704A US 2005252649 A1 US2005252649 A1 US 2005252649A1
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United States
Prior art keywords
heat conductive
metal
heat
phase transition
crystal phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/842,347
Inventor
Ming-Chi Chiu
Hsin-Hsiang Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMPEC TECHNOLOGY Co Ltd
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AMPEC TECHNOLOGY Co Ltd
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Filing date
Publication date
Application filed by AMPEC TECHNOLOGY Co Ltd filed Critical AMPEC TECHNOLOGY Co Ltd
Priority to US10/842,347 priority Critical patent/US20050252649A1/en
Assigned to AMPEC TECHNOLOGY CO., LTD. reassignment AMPEC TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, HSIN-HSIANG, CHIU, MING-CHI
Publication of US20050252649A1 publication Critical patent/US20050252649A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a heat dissipation device, and particular to a leadless lower temperature co-crystal phase transition metal heat conductive device which has higher heat dissipating effect by using two metal substrates to enclose one layer of metal heat conductive sheet.
  • heat conductive glue A or a film is coated upon a bottom of a heat dissipation device.
  • most of the heat conductive glue A or film contain with lead which has lower heat conductivity.
  • the heat conductive glue A or film cannot be used repeatedly. Further, coating the heat conductive glue A or the film is performed manually so that the distribution of the heat conductive glue A or the film is not uniform. Thereby, if too much heat conductive glue A or film is coated, then some of the heat conductive glue A or film will be extruded out so as to pollute the environment and as a result to affect the manufacturing process.
  • the primary object of the present invention is to provide a leadless lower temperature co-crystal phase transition metal heat conductive device which comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device.
  • the temperature range for co-crystal phase transition is between 50° C. to 70° C.
  • FIG. 1 is an exploded perspective view of the present invention.
  • FIG. 2 is an assembled view of the present invention.
  • FIG. 3 is a cross section view of the present invention.
  • FIG. 4 shows the embodiment of the present invention.
  • FIG. 5 shows a prior art heat dissipation device.
  • the leadless lower temperature co-crystal phase transition metal heat conductive sheet With reference to FIGS. 1, 2 and 3 , the leadless lower temperature co-crystal phase transition metal heat conductive sheet.
  • the present invention mainly comprises the following elements.
  • Two metal substrates 2 and 3 are made from tin, indium, bismuth and a little other elements.
  • a metal heat conductive sheet 1 is installed between the two metal substrates 2 and 3 , where the metal substrates 2 and 3 have the effect of increasing heat dissipating ability of the metal heat conductive sheet 1 .
  • a heat dissipation device 4 is installed above a structure formed by the metal substrates 2 , 3 and the metal heat conductive sheet 1 so as to dissipate heat from the metal heat conductive sheet 1 and the metal substrates 2 and 3 .
  • a fan 5 is installed above the heat dissipation device 4 for dissipating heat from the heat dissipation device 4 .
  • FIG. 4 The assembly view of the present invention is illustrated in FIG. 4 , where the present invention is realized on a circuit board 6 for dissipating heat generated from the circuit board 6 , wherein the temperature range for co-crystal phase transition is between 50° C. to 70° C. Thereby, the problem of the pollution of the conventional heat conductive glue will not occur.

Abstract

A leadless lower temperature co-crystal phase transition metal heat conductive device comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a heat dissipation device, and particular to a leadless lower temperature co-crystal phase transition metal heat conductive device which has higher heat dissipating effect by using two metal substrates to enclose one layer of metal heat conductive sheet.
    • BACKGROUND OF THE INVENTION
  • With reference to FIG. 5, conventionally, heat conductive glue A or a film is coated upon a bottom of a heat dissipation device. However, most of the heat conductive glue A or film contain with lead which has lower heat conductivity. Moreover, the heat conductive glue A or film cannot be used repeatedly. Further, coating the heat conductive glue A or the film is performed manually so that the distribution of the heat conductive glue A or the film is not uniform. Thereby, if too much heat conductive glue A or film is coated, then some of the heat conductive glue A or film will be extruded out so as to pollute the environment and as a result to affect the manufacturing process.
    • SUMMARY OF THE INVENTION
  • Accordingly, the primary object of the present invention is to provide a leadless lower temperature co-crystal phase transition metal heat conductive device which comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.
  • The various objects and advantages of the present invention will be more readily understood from the following detailed description when read in conjunction with the appended drawing.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is an exploded perspective view of the present invention.
  • FIG. 2 is an assembled view of the present invention.
  • FIG. 3 is a cross section view of the present invention.
  • FIG. 4 shows the embodiment of the present invention.
  • FIG. 5 shows a prior art heat dissipation device.
    • DETAILED DESCRIPTION OF THE INVENTION
  • In order that those skilled in the art can further understand the present invention, a description will be described in the following in details. However, these descriptions and the appended drawings are only used to cause those skilled in the art to understand the objects, features, and characteristics of the present invention, but not to be used to confine the scope and spirit of the present invention defined in the appended claims.
  • With reference to FIGS. 1, 2 and 3, the leadless lower temperature co-crystal phase transition metal heat conductive sheet. The present invention mainly comprises the following elements.
  • Two metal substrates 2 and 3 are made from tin, indium, bismuth and a little other elements.
  • A metal heat conductive sheet 1 is installed between the two metal substrates 2 and 3, where the metal substrates 2 and 3 have the effect of increasing heat dissipating ability of the metal heat conductive sheet 1.
  • A heat dissipation device 4 is installed above a structure formed by the metal substrates 2, 3 and the metal heat conductive sheet 1 so as to dissipate heat from the metal heat conductive sheet 1 and the metal substrates 2 and 3.
  • A fan 5 is installed above the heat dissipation device 4 for dissipating heat from the heat dissipation device 4.
  • The assembly view of the present invention is illustrated in FIG. 4, where the present invention is realized on a circuit board 6 for dissipating heat generated from the circuit board 6, wherein the temperature range for co-crystal phase transition is between 50° C. to 70° C. Thereby, the problem of the pollution of the conventional heat conductive glue will not occur.
  • Advantages of the present invention will be described herein. Firstly, two metal substrates made from tin, indium, bismuth and a little other elements enclosing the metal heat conductive sheet has the effect of increasing the heat dissipation effect. Moreover, the problem of the pollution of the conventional heat conductive glue will not occur. Furthermore, the assembly of the present invention is rapid so as to increase the manufacturing efficiency.
  • The present invention is thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the present invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

Claims (2)

1. A leadless lower temperature co-crystal phase transition metal heat conductive device comprising:
two metal substrates made from tin, indium, bismuth and a little other elements;
a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet;
a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and
a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device.
2. The leadless lower temperature co-crystal phase transition metal heat conductive device as claimed in claim 1, wherein when leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.
US10/842,347 2004-05-11 2004-05-11 Leadless lower temperature co-crystal phase transition metal heat conductive device Abandoned US20050252649A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/842,347 US20050252649A1 (en) 2004-05-11 2004-05-11 Leadless lower temperature co-crystal phase transition metal heat conductive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/842,347 US20050252649A1 (en) 2004-05-11 2004-05-11 Leadless lower temperature co-crystal phase transition metal heat conductive device

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US20050252649A1 true US20050252649A1 (en) 2005-11-17

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050073816A1 (en) * 2000-02-25 2005-04-07 Thermagon Inc. Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
US20070059356A1 (en) * 2002-05-31 2007-03-15 Almarsson Oern Pharmaceutical co-crystal compositions of drugs such as carbamazepine, celecoxib, olanzapine, itraconazole, topiramate, modafinil, 5-fluorouracil, hydrochlorothiazide, acetaminophen, aspirin, flurbiprofen, phenytoin and ibuprofen
US20090088443A1 (en) * 2002-02-15 2009-04-02 Julius Remenar Novel crystalline forms of conazoles and methods of making and using the same
US7790905B2 (en) 2002-02-15 2010-09-07 Mcneil-Ppc, Inc. Pharmaceutical propylene glycol solvate compositions
US7927613B2 (en) 2002-02-15 2011-04-19 University Of South Florida Pharmaceutical co-crystal compositions
US20110247796A1 (en) * 2010-04-07 2011-10-13 Hon Hai Precision Industry Co., Ltd. Heat sink
US8183290B2 (en) 2002-12-30 2012-05-22 Mcneil-Ppc, Inc. Pharmaceutically acceptable propylene glycol solvate of naproxen
US8362062B2 (en) 2002-02-15 2013-01-29 Mcneil-Ppc, Inc. Pharmaceutical compositions with improved dissolution
US10633344B2 (en) 2002-03-01 2020-04-28 University Of South Florida Multiple-component solid phases containing at least one active pharmaceutical ingredient

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6616999B1 (en) * 2000-05-17 2003-09-09 Raymond G. Freuler Preapplicable phase change thermal interface pad
US6835453B2 (en) * 2001-01-22 2004-12-28 Parker-Hannifin Corporation Clean release, phase change thermal interface
US6841867B2 (en) * 2002-12-30 2005-01-11 Intel Corporation Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials
US6946190B2 (en) * 2002-02-06 2005-09-20 Parker-Hannifin Corporation Thermal management materials
US6945312B2 (en) * 2002-12-20 2005-09-20 Saint-Gobain Performance Plastics Corporation Thermal interface material and methods for assembling and operating devices using such material
US6956739B2 (en) * 2002-10-29 2005-10-18 Parker-Hannifin Corporation High temperature stable thermal interface material
US7078109B2 (en) * 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078109B2 (en) * 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
US6616999B1 (en) * 2000-05-17 2003-09-09 Raymond G. Freuler Preapplicable phase change thermal interface pad
US6835453B2 (en) * 2001-01-22 2004-12-28 Parker-Hannifin Corporation Clean release, phase change thermal interface
US6946190B2 (en) * 2002-02-06 2005-09-20 Parker-Hannifin Corporation Thermal management materials
US6956739B2 (en) * 2002-10-29 2005-10-18 Parker-Hannifin Corporation High temperature stable thermal interface material
US6945312B2 (en) * 2002-12-20 2005-09-20 Saint-Gobain Performance Plastics Corporation Thermal interface material and methods for assembling and operating devices using such material
US6841867B2 (en) * 2002-12-30 2005-01-11 Intel Corporation Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050073816A1 (en) * 2000-02-25 2005-04-07 Thermagon Inc. Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
US7369411B2 (en) * 2000-02-25 2008-05-06 Thermagon, Inc. Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
US20090088443A1 (en) * 2002-02-15 2009-04-02 Julius Remenar Novel crystalline forms of conazoles and methods of making and using the same
US7790905B2 (en) 2002-02-15 2010-09-07 Mcneil-Ppc, Inc. Pharmaceutical propylene glycol solvate compositions
US7927613B2 (en) 2002-02-15 2011-04-19 University Of South Florida Pharmaceutical co-crystal compositions
US8362062B2 (en) 2002-02-15 2013-01-29 Mcneil-Ppc, Inc. Pharmaceutical compositions with improved dissolution
US10633344B2 (en) 2002-03-01 2020-04-28 University Of South Florida Multiple-component solid phases containing at least one active pharmaceutical ingredient
US20070059356A1 (en) * 2002-05-31 2007-03-15 Almarsson Oern Pharmaceutical co-crystal compositions of drugs such as carbamazepine, celecoxib, olanzapine, itraconazole, topiramate, modafinil, 5-fluorouracil, hydrochlorothiazide, acetaminophen, aspirin, flurbiprofen, phenytoin and ibuprofen
US8183290B2 (en) 2002-12-30 2012-05-22 Mcneil-Ppc, Inc. Pharmaceutically acceptable propylene glycol solvate of naproxen
US8492423B2 (en) 2002-12-30 2013-07-23 Mcneil-Ppc, Inc. Pharmaceutical propylene glycol solvate compositions
US20110247796A1 (en) * 2010-04-07 2011-10-13 Hon Hai Precision Industry Co., Ltd. Heat sink

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AS Assignment

Owner name: AMPEC TECHNOLOGY CO., LTD., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHIU, MING-CHI;CHANG, HSIN-HSIANG;REEL/FRAME:015314/0265

Effective date: 20040420

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION