US20050221610A1

US20050221610A1 - Method and apparatus of stress relief in semiconductor structures

Info

Publication number: US20050221610A1
Application number: US11/144,980
Authority: US
Inventors: Mark Hoinkis; Matthias Hierlemann; Gerald Friese; Andy Cowley; Dennis Warner; Erdem Kaltalioglu
Original assignee: Individual
Current assignee: Individual
Priority date: 2003-05-16
Filing date: 2005-06-03
Publication date: 2005-10-06
Also published as: US7368804B2; US20040227214A1; US20080213993A1; US7786007B2; WO2004102656A1; TWI250582B; TW200426943A

Abstract

A method, apparatus and system are provided for relieving stress in the via structures of semiconductor structures whenever a linewidth below a via is larger than a ground-rule, including providing a via at least as large as the groundrule, providing a landing pad above the via, providing a via bar in place of a via, slotting the metal linewidth below the via, or providing an oversize via with a sidewall spacer.

Description

This application is a continuation of application Ser. No. 10/439,874, filed May 16, 2003, and entitled “Method and Apparatus of Stress Relief in Semiconductor Structures”, which application is incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to the relief of stress in semiconductor structures, and more particularly relates to the relief of stress in the via structures of SiLK™ semiconductor structures.

BACKGROUND

SiLK™ is a trademark of Dow Chemical for a polymer thermoset resin exhibiting very low dielectric constant, useful in semiconductor manufacturing, and described in Balance et al., U.S. Pat. No. 5,523,163, for LOW DIELECTRIC CONSTANT COATINGS, issued Jun. 4, 1996, and Bremmer et al. U.S. Pat. No. 5,906,859, for a METHOD FOR PRODUCING LOW DIELECTRIC COATINGS FROM HYDROGEN SILSEQUIOXANE RESIN, issued May 25, 1999, and Bremmer et al., U.S. Pat. No. 6,210,749, THERMALLY STABLE DIELECTRIC COATINGS, issued Apr. 3, 2001, the disclosures of all of which are incorporated by reference herein in their entirety. SiLK™ structures are increasingly being used to replace silicon oxide (S_iO₂) as a dielectric because of its superior dielectric qualities, namely a dielectric constant of 2.65 compared with 4.1 for silicon oxide.
SiLK™ also demonstrates comparable toughness and greater resilience than the more brittle silicon oxide. Low dielectric constant in a material permits smaller structures to be manufactured, which in turn permits closer packing of devices, faster speeds, and reduced crosstalk. The spin-on aromatic polymer has no fluorine in its composition, delivers superior planarization and gapfill, and is stable to 490° C. These properties have made SiLK™ popular for a variety of CMOS technologies demanding “low-K” interlayer dielectrics, such as copper/damascene and aluminum/tungsten technologies.
There are stress problems, however, in vias built with SiLK™ that do not occur with traditional silicon oxide vias. These stresses result in thermal cycle and in-line via-resistance shifts. There are at least three cases in which two-dimensional modeling has predicted high stresses in SiLK™ vias wherein thermal-cycle reliability failures have been directly correlated with the stress, namely (1) vias built in SiLK™ rather than silicon oxide, (2) vias built in SiLK™ wherein the subsequent level is executed in silicon oxide instead of SiLK™ and (3) vias built in SiLK™ wherein the next level is built in oxide compared with vias built in SiLK™ with a stress-relief layer prior to the subsequent level being built in oxide.
A stress problem with SiLK™ is illustrated in FIG. 1 a, showing a pair of semiconductor cross-sections depicting a typical prior art oxide embodiment A and a prior art SiLK™ embodiment B of a wafer structure, each comprising a base layer 1 of silicon substrate, atop of which is a silicon oxide base layer 2. Upon these are a first conductive line 3 and a second conductive line 4, usually made of copper metal, that join one another through a first via 5, which penetrates a level-separating nitride layer 6 that separates the first level 10 from a second level 20. In both drawings, third 30 and fourth 40 levels are shown, also separated by level-separating nitride layers 6, the third level 30 comprising a silicon oxide layer 8 and the fourth level 40 comprising a silicon oxide layer 9 beneath a silicon nitride cap 11. Cross-section A shows a typical via 5 defined by a first level silicon oxide layer 7 and partly by the base silicon oxide layer 2. Cross-section B, however, shows a via 5 defined by a second level SiLK™ layer 7′ and a base level SiLK™ structure 2′. The differences between the two structures may be seen in corresponding stress analysis images A′, B′, wherein darkened areas indicate high stresses. Comparing B′ to A′, it is apparent that the SiLK™ via structure creates much more stress and distortion than the traditional silicon oxide structure.
Referring to FIG. 1 b, plots 100 of via resistance shift in Ohms/link are shown for SiLK™ and for oxide, respectively. What is needed is a method suitable for making SiLK™ via structures with reduced stress.

SUMMARY OF THE INVENTION

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure teaches a method, apparatus and system for relieving stress in the via structures of semiconductor structures whenever a linewidth below a via is larger than a ground-rule, in accordance with the following exemplary figures, in which:
FIG. 1 a shows a schematic diagram of typical vias built in SiLK™ compared with vias built in oxide;
FIG. 1 b shows a graphical diagram for via resistance of typical vias built in SiLK™ compared with vias built in oxide;
FIG. 2 a shows a partial schematic diagram of vias built in SiLK™ in which the subsequent level is built in oxide as compared with the subsequent level being built in SiLK™ according to an embodiment of the present disclosure;
FIG. 2 b shows a graphical diagram of vias built in SiLK™ in which the subsequent level is built in oxide as compared with the subsequent level being built in SiLK™ according to an embodiment of the present disclosure;
FIG. 3 shows a schematic diagram of vias built in SiLK™ in which the next level is built in oxide compared with vias built in SiLK™ with a stress-relief layer prior to the subsequent level being built in oxide according to an embodiment of the present disclosure;
FIG. 4 shows a graphical diagram of stress-relief layer experimental results according to an embodiment of the present disclosure;
FIG. 5 shows a schematic diagram of vias where a second conductive line varies in width according to an embodiment of the present disclosure;
FIG. 6 shows a schematic diagram of vias where stress is substantially reduced by increasing via thickness according to an embodiment of the present disclosure; and
FIG. 7 shows a schematic diagram of vias where the width of the first lower conductive line varies according to an embodiment of the present disclosure.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

Some of the “8SF” SiLK™-related reliability issues, including thermal cycle and in-line via-resistance shift problems in particular, have been related to stress in the via as determined by stress modeling. There are at least three cases in which 2D stress modeling has predicted high stress in the via and in which thermal-cycle reliability failures have been correlated with this higher stress: 1) vias built in SiLK™ compared with vias built in oxide (FIG. 1); 2) vias built in SiLK™ in which the subsequent level is built in oxide as compared with the subsequent level being built in SiLK™ (FIG. 2 a); and 3) vias built in SiLK™ in which the next level is built in oxide compared with vias built in SiLK™ with a stress-relief layer prior to the subsequent level being built in oxide (FIG. 3).
Referring to FIG. 2 a, there is shown side-by-side a cross-section of a first embodiment of the invention C and the prior art SiLK™ embodiment B from FIG. 1. As can be seen, the structures are identical except that in the inventive embodiment C the third level silicon oxide layer 8 has been replaced with a SiLK™ “stress-relief” layer 8′. Examination of the stress analysis images C′ and B′ plainly show a reduction of stress in the C structure over the prior art.
Referring to FIG. 2 b, there are shown histograms 200 that quantitatively demonstrate the superiority of the inventive embodiment C over the prior art SiLK™ embodiment B. Here, the via V1 with SiLK™ above passed thermal cycle tests, while the via V2 with oxide above failed the same thermal cycle tests.
Referring to FIG. 3, there is shown the prior art SiLK™ embodiment B next to five variants of the inventive embodiment C of the invention, wherein the stress-relieving SiLK™ layer 8′ is varied in thickness from 1,000 to 5,000 Angstroms in increments of 1,000 Angstroms. As can be seen in the stress analysis images C′-a through C′-e, there is no appreciable gain in stress relief above one thousand Angstroms. Hence, a 1,000 Angstrom SiLK™ stress-relief layer is all that is required to obtain substantially all of the benefits of the invention.
More recently, 3D stress modeling has been performed and has shown several interesting geometry-dependent stress phenomena. The first is that as the metal linewidth above a via increases, the stress in the via decreases (FIG. 4). The second is that as the via-diameter increases, the stress in the via decreases (FIG. 5). And third, as the linewidth below the via increases, the stress in the via also increases (FIG. 6). These stress-modeling results suggest that a ground-rule line above a via with a large linewidth beneath the via has the highest possible stress in the via. Experimentally, we observe that our “plate-below” macro fails the easiest in terms of thermal-cycle reliability testing. As our modeling shows, by increasing the linewidth above a via, stress should be reduced. Experimentally we observe few or no failures with “plate-above” macros.
Referring to FIG. 4, charts 400 of stress-relief layer experimental results illustrate significantly higher failure rates for SiLK™ with no stress-relief layer versus significantly lower failure rates for SiLK™ with the a stress-relief layer according to an embodiment of the present disclosure.
Referring to FIG. 5, three dimensional images 500 show a via 5 joining a lower first 3 and upper second 4 conductive lines. The four images are identical except that the second conductive line varies in width. As can be seen, by increasing the width of the second upper conductive line, stress is substantially reduced.
Referring to FIG. 6, three dimensional images 600 show a via joining a lower first 3 and upper second 4 conductive lines. Here, it is the diameter of the via 5 that varies. This demonstrates that stress is substantially reduced by increasing via thickness.
Referring to FIG. 7, there is again shown a three dimensional image of a via joining a lower first 3 and upper second 4 conductive lines, but here it is the width of the first lower conductive line 3 that varies. Note that here, an increase in the lower conductive line 3, which is adjacent to the silicon oxide substrate layer 2, results in an increase in stress, not a decrease as may have been expected.
The above results allow formulation of inventive design rules for the manufacture of SiLK™ vias. In doing so, we refer to the “groundrule” width of a via, conductive line, or other structure. By “groundrule”, we mean the smallest size available given the current technology at the time of manufacture. Unfortunately, lower conductive lines are generally larger than groundrule and therefore contribute to SiLK™ stress. The inventive design rules are as follows:
Whenever a linewidth below a via is larger than ground-rule:

- 1. require a via larger than groundrule;
- 2. require a landing pad above the via (ground-rule or larger);
- 3. use a via bar in place of a via;
- 4. slot the metal linewidth below the via;
- 5. use an oversize via with sidewall spacer.

Thus, embodiments of the present disclosure impose specific design-rules for copper metallization built in SiLK™ so that stress in the via is minimized. With such an approach, a reliable copper metallization with SiLK™ can be realized. Improvements in stress-relief will be realized by implementing any number of the above design rules.
It is to be understood that all physical quantities disclosed herein, unless explicitly indicated otherwise, are not to be construed as exactly equal to the quantity disclosed, but rather as about equal to the quantity disclosed. Further, the mere absence of a qualifier such as “about” or the like, is not to be construed as an explicit indication that any such disclosed physical quantity is an exact quantity, irrespective of whether such qualifiers are used with respect to any other physical quantities disclosed herein.
While preferred embodiments have been shown and described, various modifications and substitutions may be made thereto without departing from the spirit and scope of the invention. Accordingly, it is to be understood that the present invention has been described by way of illustration only, and such illustrations and embodiments as have been disclosed herein are not to be construed as limiting to the claims.

Claims

1. A semiconductor integrated circuit device, comprising:

a plurality of electrically conductive vias for electrically connecting metal layers of said device;

a first dielectric layer overlying said vias; and

a stress relief layer, said stress relief layer overlying said vias and interposed between said vias and said first dielectric layer.

2. The device of claim 1, wherein said first dielectric layer comprises a layer of a first dielectric material, the device further comprising a layer of a second dielectric material overlying said layer of first dielectric material.

3. The device of claim 2, wherein said first dielectric material comprises an oxide material and said second dielectric material comprises a nitride material.

4. The device of claim 1, further comprising a second dielectric layer overlying said vias and interposed between said vias and said stress relief layer.

5. The device of claim 4, wherein the second dielectric layer comprises a cap layer.

6. The device of claim 4, wherein the second dielectric layer comprises a nitride layer.

7. The device of claim 4, wherein the second dielectric layer is less flexible than the stress relief layer.

8. The device of claim 1, wherein the first dielectric layer is less flexible than the stress relief layer.

9. The device of claim 1, wherein said stress relief layer comprises a low-k material.

10. The device of claim 9, wherein said stress relief layer comprises a polymer thermoset resin.

11. The device of claim 1, wherein said first dielectric layer comprises an oxide layer.

12. The device of claim 1, wherein the first dielectric layer comprises a nitride layer.

13. The device of claim 1, wherein said stress relief layer has a thickness of about 1000 Å.

14. The device of claim 1, wherein the vias are embedded within a further dielectric layer that underlies said stress relief layer, wherein said further dielectric layer comprises a low-k dielectric material.

15. The device of claim 14, wherein the further dielectric layer comprises a material that is more flexible than the first dielectric layer.

16. The device of claim 1, further comprising a cap layer overlying said stress relief layer and interposed between said stress relief layer and said first dielectric layer.

17. The device of claim 16, wherein said first dielectric layer comprises a layer of a first dielectric material, the device further comprising a layer of a second dielectric material overlying said layer of first dielectric material.

18. The device of claim 17, wherein said first dielectric material comprises an oxide material and said second dielectric material comprises a nitride material.

19. A method of making a semiconductor integrated circuit, the method comprising:

forming a first dielectric layer;

forming a recess in the first dielectric layer;

forming a conductor within the recess;

forming a stress relief layer over the first dielectric layer and the conductor; and

forming a second dielectric layer over the stress relief layer.

20. The method of claim 19, further comprising forming a third dielectric layer over the second dielectric layer, the third dielectric layer being formed of a different material than the second dielectric layer.

21. The method of claim 19, wherein the stress relief layer comprises a low-k dielectric material.

22. The method of claim 21, wherein the stress relief layer comprises a thermoset polymer resin.

23. The method of claim 19, further comprising forming a third dielectric layer over the first dielectric layer, wherein forming a stress relief layer comprises forming a stress relief layer over the third dielectric layer.

24. The method of claim 23, wherein the third dielectric layer comprises a cap layer.