US20050211543A1 - Generation of uniformly-distributed plasma - Google Patents
Generation of uniformly-distributed plasma Download PDFInfo
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- US20050211543A1 US20050211543A1 US11/130,315 US13031505A US2005211543A1 US 20050211543 A1 US20050211543 A1 US 20050211543A1 US 13031505 A US13031505 A US 13031505A US 2005211543 A1 US2005211543 A1 US 2005211543A1
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- cathode assembly
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Definitions
- Plasma is considered the fourth state of matter.
- a plasma is a collection of charged particles moving in random directions that is, on average, electrically neutral.
- One method of generating a plasma is to pass a current through a low-pressure gas that is flowing between two parallel conducting electrodes. Once certain parameters are met, the gas “breaks down” to form the plasma.
- a plasma can be generated by applying a potential of several kilovolts between two parallel conducting electrodes in an inert gas atmosphere (e.g., argon) at a pressure that is in the range of about 10 ⁇ 1 to 10 ⁇ 2 Torr.
- an inert gas atmosphere e.g., argon
- Plasma processes are widely used in many industries, such as the semiconductor manufacturing industry. For example, plasma etching is commonly used to etch substrate material and films deposited on substrates in the electronics industry. There are four basic types of plasma etching processes that are used to remove material from surfaces: sputter etching, pure chemical etching, ion energy driven etching, and ion inhibitor etching.
- Plasma sputtering is a technique that is widely used for depositing films on substrates.
- Sputtering is the physical ejection of atoms from a target surface and is sometimes referred to as physical vapor deposition (PVD).
- Ions such as argon ions, are generated and then are drawn out of the plasma, and are accelerated across a cathode dark space.
- the target surface has a lower potential than the region in which the plasma is formed. Therefore, the target surface attracts positive ions.
- Positive ions move towards the target with a high velocity and then impact the target and cause atoms to physically dislodge or sputter from the target surface.
- the sputtered atoms then propagate to a substrate or other work piece where they deposit a film of sputtered target material.
- the plasma is replenished by electron-ion pairs formed by the collision of neutral molecules with secondary electrons generated at the target surface.
- Reactive sputtering systems inject a reactive gas or mixture of reactive gases into the sputtering system.
- the reactive gases react with the target material either at the target surface or in the gas phase, resulting in the deposition of new compounds.
- the pressure of the reactive gas can be varied to control the stoichiometry of the film. Reactive sputtering is useful for forming some types of molecular thin films.
- Magnetron sputtering systems use magnetic fields that are shaped to trap and concentrate secondary electrons proximate to the target surface.
- the magnetic fields increase the density of electrons and, therefore, increase the plasma density in a region that is proximate to the target surface.
- the increased plasma density increases the sputter deposition rate.
- FIG. 1 illustrates a cross-sectional view of a known plasma sputtering apparatus having a direct current (DC) power supply.
- DC direct current
- FIG. 2 illustrates a cross-sectional view of a plasma generating apparatus according to one embodiment of the invention.
- FIG. 3 illustrates a cross-sectional view of a plasma generating apparatus including one embodiment of a magnet assembly according to the invention.
- FIG. 4 illustrates a graphical representation of the power as a function of time for periodic pulses applied to a plasma generated by the plasma generating system of FIG. 2 .
- FIG. 5 is a cross-sectional view of another embodiment of a plasma generating apparatus according to the present invention.
- FIG. 6 illustrates a cross-sectional view of an excited atom generator that includes an excited atom source according to the invention.
- FIG. 7 is a flowchart of an illustrative process of generating a uniformly-distributed plasma according to the present invention.
- FIG. 1 illustrates a cross-sectional view of a known plasma generating apparatus 100 having a DC power supply 102 .
- the known plasma generating apparatus 100 includes a vacuum chamber 104 where a plasma 105 is generated.
- the vacuum chamber 104 can be coupled to ground.
- the vacuum chamber 104 is positioned in fluid communication with a vacuum pump 106 via a conduit 108 and a valve 109 .
- the vacuum pump 106 is adapted to evacuate the vacuum chamber 104 to high vacuum.
- the pressure inside the vacuum chamber 104 is generally less than 10 ⁇ b 1 Torr.
- a feed gas 110 from a feed gas source 111 such as an argon gas source, is introduced into the vacuum chamber 104 through a gas inlet 112 .
- the gas flow is controlled by a valve 113 .
- the plasma generating apparatus 100 also includes a cathode assembly 114 .
- the cathode assembly 114 is generally in the shape of a circular disk.
- the cathode assembly 114 can include a target 116 .
- the cathode assembly 114 is electrically connected to a first terminal 118 of the DC power supply 102 with an electrical transmission line 120 .
- An insulator 122 isolates the electrical transmission line 120 from a wall of the vacuum chamber 104 .
- An anode 124 is electrically connected to a second terminal 126 of the DC power supply 102 with an electrical transmission line 127 .
- An insulator 128 isolates the electrical transmission line 127 from the wall of the vacuum chamber 104 .
- the anode 124 is positioned in the vacuum chamber 104 proximate to the cathode assembly 114 .
- An insulator 129 isolates the anode 124 from the cathode assembly 114 .
- the anode 124 and the second output 126 of the DC power supply 102 are coupled to ground in some systems.
- the plasma generating apparatus 100 illustrates a magnetron sputtering system that includes a magnet 130 that generates a magnetic field 132 proximate to the target 116 .
- the magnetic field 132 is strongest at the poles of the magnet 130 and weakest in the region 134 .
- the magnetic field 132 is shaped to trap and concentrate secondary electrons proximate to the target surface. The magnetic field increases the density of electrons and, therefore, increases the plasma density in a region that is proximate to the target surface.
- the plasma generating apparatus 100 also includes a substrate support 136 that holds a substrate 138 or other work piece.
- the substrate support 136 can be electrically connected to a first terminal 140 of a RF power supply 142 with an electrical transmission line 144 .
- An insulator 146 isolates the RF power supply 142 from a wall of the vacuum chamber 104 .
- a second terminal 148 of the RF power supply 142 is coupled to ground.
- the feed gas 110 from the feed gas source 111 is injected into the chamber 104 .
- the DC power supply 102 applies a DC voltage between the cathode assembly 114 and the anode 124 that causes an electric field 150 to develop between the cathode assembly 114 and the anode 124 .
- the amplitude of the DC voltage is chosen so that it is sufficient to cause the resulting electric field 150 to ionize the feed gas 110 in the vacuum chamber 104 and to ignite the plasma 105 .
- the ionization process in a known plasma sputtering apparatus is generally referred to as direct ionization or atomic ionization by electron impact and can be described by the following equation: Ar+ e ⁇ ⁇ Ar + +2 e ⁇
- the plasma 105 is maintained, at least in part, by secondary electron emission from the cathode assembly 114 .
- the magnetic field 132 that is generated proximate to the cathode assembly 114 confines the secondary electrons in the region 134 and, therefore, confines the plasma 105 approximately in the region 134 .
- the confinement of the plasma 105 in the region 134 increases the plasma density in the region 134 for a given input power.
- the cathode assembly 114 is negatively biased so that ions in the plasma 105 bombard the target 116 .
- the impact caused by these ions bombarding the target 116 dislodges or sputters material from the target 116 .
- a portion of the sputtered material forms a thin film of sputtered target material on the substrate 138 .
- magnetron sputtering systems have relatively poor target utilization.
- the term “poor target utilization” is defined herein to mean undesirable non-uniform erosion of target material. Poor target utilization is caused by a relatively high concentration of positively charged ions in the region 134 that results in a non-uniform plasma.
- magnetron etching systems typically have relatively non-uniform etching characteristics.
- Increasing the power applied to the plasma can increase the uniformity and density of the plasma. However, increasing the amount of power necessary to achieve even an incremental increase in uniformity and plasma density can significantly increase the probability of establishing an electrical breakdown condition leading to an undesirable electrical discharge (an electrical arc) in the chamber 104 .
- an apparatus generates a plasma having a higher density of ions for a giving input power than a plasma generated by known plasma systems, such as the plasma generating apparatus 100 of FIG. 1 .
- a plasma generating apparatus generates a uniform plasma proximate to a cathode assembly.
- FIG. 2 is a cross-sectional view of a plasma generating apparatus 200 according to one embodiment of the invention.
- the plasma generating apparatus 200 is configured for physical vapor deposition (PVD).
- the plasma generating apparatus 200 is configured for etching a substrate (not shown).
- the plasma generating apparatus 200 can also be configured for chemical vapor deposition (CVD).
- the plasma generating apparatus 200 includes a chamber (not shown), such as a vacuum chamber that confines the plasma.
- the chamber can be coupled to a vacuum system (not shown).
- the plasma generating apparatus 200 includes a power supply 202 .
- the plasma generating apparatus 200 also includes a cathode assembly 204 that comprises a cathode 208 and a target 206 . Some embodiments of the plasma generating apparatus 200 of the present invention that are used for etching do not include a target.
- the cathode 208 is formed of a metal material such as stainless steel or any other chemically inert material that does not react with reactive gases.
- a first output 212 of the power supply 202 is coupled to an input terminal 210 of the cathode assembly 204 .
- a second output 214 of the power supply 202 is coupled to an input terminal 215 of an anode 216 .
- An insulator 218 isolates the anode 216 from the cathode assembly 204 .
- the second output 214 of the power supply 202 and the anode 216 are coupled to ground.
- the power supply 202 can be any type of power supply suitable for generating and maintaining a plasma, such as a direct current (DC) power supply, an alternating current (AC) power supply, a radio-frequency (RF) power supply, or a pulsed DC power supply.
- AC power supplies can require less power to generate and maintain a plasma than DC power supplies.
- the plasma is generated and maintained through the use of a planar discharge, an electron cyclotron resonance (ECR), a capacitively coupled plasma discharge (CCP), a helicon plasma source or an inductively coupled plasma (ICP) discharge.
- the plasma is generated and maintained by techniques, such as UV radiation techniques, X-ray techniques, microwave techniques, electron beam techniques, ion beam techniques, or ionizing filament techniques, for example.
- the power supply 202 is a pulsed power supply.
- the first output 212 of the power supply 202 couples a negative voltage pulse to the input terminal 210 of the cathode assembly 204 .
- the second output 214 of the power supply 202 couples a positive voltage pulse to the input terminal 215 of the anode 216 .
- the anode 216 is positioned so as to form a gap 220 between the anode 216 and the cathode assembly 204 that is sufficient to allow current to flow through a region 222 between the anode 216 and the cathode assembly 204 .
- the width of the gap 220 is in the range of about 0.3 cm to 10 cm.
- the width of the gap 220 as well as the surface area of the anode 216 determines the volume of the region 222 .
- the gap 220 and the total volume of the region 222 are parameters in the ionization process as described herein.
- the dimensions of the gap 220 can be varied throughout the region 222 between the anode 216 and the cathode assembly 204 .
- the anode 216 includes a protuberance 221 that reduces a portion of the gap 220 between the anode 216 and the cathode assembly 204 .
- the dimensions of the protuberance 221 can be varied to control a pressure in the region 222 . Controlling in the region 222 can increase the efficiency of generating a plasma according to the invention.
- the anode 216 and/or the cathode 208 can include multiple protuberances, raised areas, depressed areas, surface anomalies, or shapes that control the ionization process.
- the pressure in the region 222 can be optimized by including a raised area or protuberance (not shown) on the surface of the cathode 208 .
- the raised area can create a narrow passage at a location in the region 222 between the anode 216 and the cathode 208 .
- One or more gas lines 224 provide feed gas 226 (indicated by arrow) from a feed gas source 228 to the chamber (not shown).
- the feed gas 226 can be supplied to the gap 220 between the cathode assembly 204 and the anode 216 .
- the gas lines 224 are isolated from the chamber and other components by insulators 229 .
- the gas lines 224 are isolated from the feed gas source 228 by using in-line insulating couplers (not shown).
- the feed gas source 228 can contain any type of feed gas 226 suitable for plasma generation and processing, such as argon.
- the feed gas 226 includes a mixture of different gases, such as a mixture of reactive gases, pure reactive gases or non-reactive gases.
- the feed gas 226 includes a noble gas or a mixture of noble gases.
- a gas flow controller 230 controls the flow rate of the feed gas 226 .
- the gas flow controller 230 can be any type of flow controller, such as a simple gas valve or a mass flow controller that precisely meters the feed gas entering into the chamber.
- an excited atom source such as the excited atom source described in connection with FIG. 6 , is disposed between the gas source 228 and the chamber.
- the gas source 228 supplies a volume of ground state gas atoms to the excited atom source.
- the excited atom source generates excited atoms including metastable atoms from the ground state atoms and provides the excited atoms including the metastable atoms to the chamber.
- the excited atom source can provide the excited atoms directly between cathode assembly 204 and the anode 216 .
- the feed gas 226 from the feed gas source 228 flows through the gas flow controller 230 into the chamber.
- the feed gas 226 flows to the excited atom source.
- the excited atom source generates excited atoms including metastable atoms from ground state feed gas atoms and provides the excited atoms including the metastable atoms to the chamber.
- the flow rate of the feed gas 226 is controlled so as to create the desired chamber pressure.
- the desired chamber pressure depends on other operating parameters, such as the geometry of the plasma generating apparatus 200 and the desired plasma properties.
- the pressure in the chamber can be in the range of about 1 mTorr to 10 Torr.
- the feed gas 226 or the excited atoms are directly supplied to the gap 220 between the cathode assembly 204 and the anode 216 .
- Directly supplying the feed gas 226 or the excited atoms to the gap 220 between the cathode assembly 204 and the anode 216 creates a pressure differential between the region 222 and a region 232 that is located outside of the gap 220 .
- This pressure differential is generated, at least in part, by the difference in the volume in the region 222 and the volume in the region 232 .
- Adjusting dimensions of the protuberance 221 changes the pressure in the region 222 . Since the volume in the region 222 is generally less than the volume in the region 232 , the pressure in the region 222 is higher than the pressure in the region 232 . This pressure differential causes a rapid volume exchange of feed gas 226 in the region 222 between the cathode assembly 204 and the anode 216 . The pressure differential can also improve the efficiency of the ionization of a plasma in the region 222 . In addition, the pressure differential can increase the velocity of the ions in the plasma flowing through the gap 220 .
- the power supply 202 applies a voltage between the cathode 208 and the anode 216 .
- the power supply 202 applies a voltage potential between the cathode 208 and the anode 216 before the feed gas 226 is injected.
- the power supply 202 applies a voltage pulse between the cathode 208 and the anode 216 after the feed gas 226 is injected.
- the desired amplitude of the voltage pulses depends on many factors, such as the desired volume and characteristics of the plasma.
- the amplitude of the voltage pulses generated by the power supply 202 is in the range of about 50V to 30 kV and the peak current level is in the range of about 1 A to 5 kA.
- the width of the voltage pulses is in the range of about 0.1 microsecond to one hundred seconds and the repetition rate of the pulses is below 1 kHz.
- the resulting peak plasma density of the plasma depends on many factors, such as the geometry of the plasma generating system. For example, in one embodiment, the peak plasma density is in the range of about 10 7 to 10 16 cm ⁇ 3 for argon feed gas.
- the power supply 202 generates a voltage and a current that is large enough to ignite the plasma in the region 222 .
- the power supply 202 can generate an initial voltage that is sufficient to create a plasma discharge voltage that is in the range of about 100V to 1 kV with a discharge current between the cathode 208 and the anode 216 that is in the range of about 0.1 A to 100 A.
- the desired value of the discharge current is a function of the volume of the plasma and the desired plasma properties.
- the presence of a magnetic field (not shown) in the region 222 can have a dramatic effect on the required values for the voltage and current that are necessary to generate a plasma with the desired characteristics.
- excited atoms including metastable atoms from the excited atom source are injected in the region 222 between the cathode assembly 204 and the anode 216 . Since metastable atoms require less energy to ionize than a similar volume of ground state atoms, the metastable atoms ionize at a higher rate than ground state atoms for the same input energy.
- the excited atom source excites ground state atoms to generate excited atoms including metastable atoms and the power supply 202 generates a voltage that is sufficient to ionize the excited atoms including the metastable atoms to generate a plasma. This multi-step plasma is discussed in more detail herein.
- the combination of forming the plasma in the gap 220 while injecting additional feed gas and/or excited atoms into the region 222 substantially reduces the probability of establishing a breakdown condition in the chamber when a large power is applied between the cathode 208 and the anode 216 .
- the additional feed gas 226 and/or the excited atoms commingle with the plasma to allow a greater amount of power to be absorbed by the plasma before the plasma contracts and a breakdown condition occurs.
- the plasma tends to diffuse homogenously in the region 232 thereby creating a relatively homogeneous plasma volume.
- the pressure gradient responsible for this homogenous diffusion is described in more detail herein.
- Homogeneous plasma volumes are advantageous for many plasma processes. For example, plasma etching processes using homogenous plasma volumes accelerate ions in the high-density plasma towards a surface of a substrate (not shown) being etched in a more uniform manner than conventional plasma etching. Consequently, the surface of the substrate is etched more uniformly. Plasma processes using homogeneous plasma volumes can achieve high uniformity without the necessity of rotating the substrate.
- magnetron sputtering systems using homogenous plasma volumes accelerate ions in the high-density plasma towards a surface of the sputtering target 206 in a more uniform manner than conventional magnetron sputtering. Consequently, the target material is deposited more uniformly on a substrate (not shown) without the necessity of rotating the substrate and/or the magnetron. Also, the surface of the sputtering target 206 is eroded more evenly and, thus higher target utilization is achieved.
- the anode 216 includes target material in order to reduce possible contamination from sputtering undesired material.
- the plasma generating apparatus 200 can be operated in a pulsed power mode. In this mode, relatively high power pulses can be applied to the plasma, while keeping the average applied power relatively low.
- the power supply 202 is a pulsed power supply that generates high-power pulses in the range of about 1 kW to 10 MW.
- the power supply 202 generates high-power pulses that form a plasma having a discharge current that is in the range of about 1 A to 5 kA and a discharge voltage that is in the range of about 50V to 500V for a pressure that is in the range of about 1 mTorr to 10 Torr.
- Each of the high-power pulses is maintained for a predetermined time that, in some embodiments, is in the range of about one microsecond to ten seconds. In one embodiment, the repetition frequency or repetition rate of the high-power pulses is in the range of about 0.1 Hz to 1 kHz.
- the average power generated by the second power supply 222 can be less than one megawatt depending on the desired volume and characteristics of the plasma.
- the thermal energy in the cathode 208 and/or the anode 216 can be conducted away or dissipated by liquid or gas cooling such as helium cooling (not shown).
- the voltage pulse has a relatively rapid rise time that is between about 0.1 microsecond and ten seconds.
- the electric field 234 generated by the high-power electrical pulses is a pulsed electric field.
- the electric field 234 is a quasi-static electric field.
- the term “quasi-static electric field” is defined herein to mean an electric field that has a characteristic time of electric field variation that is much greater than the collision time for electrons with neutral gas particles. Such a time of electric field variation can be on the order of ten seconds. The strength and the position of the electric field 234 will be discussed in more detail herein.
- the amplitude and pulse width of the high-power electrical pulses are limited by the power that the plasma can absorb before the high-power discharge contracts and terminates. In one embodiment, the amplitude and pulse width of the high-power electrical pulse are increased and thus the density of the plasma is increased by increasing the flow rate of the feed gas 226 .
- the flow rate of the feed gas 226 is related to the amount of power that is applied to the plasma in order to control the plasma density.
- the density of plasma can be increased by a rapid volume exchange of an additional volume of feed gas 226 with the volume of plasma that is generated in the region 222 .
- a first volume of feed gas 226 is supplied to the region 222 .
- the first volume of feed gas 226 is then ionized to form a plasma in the region 222 .
- the gas flow controller 230 supplies an additional volume of feed gas 226 to the region 222 .
- the additional volume of feed gas 226 displaces the plasma that is generated in the region 222 . Transporting the plasma through the region 222 into the region 232 by a rapid volume exchange of the feed gas 226 increases the power that can be absorbed by the plasma and, thus, generates a higher density plasma in the region 232 .
- Controlling the flow of the feed gases 226 through the regions 222 can affect the homogeneity, distribution profile, and density of the plasma. Additionally, controlling certain parameters of the high-power pulses generated by the power supply 202 , such as power and pulse rate can also affect the homogeneity, distribution profile, and density of the plasma.
- the density of the plasma is increased by a rapid volume exchange of an additional volume of excited atoms including metastable atoms with the volume of plasma that is generated in the region 222 .
- a first volume of excited atoms is supplied to the region 222 .
- the first volume of excited atoms is then ionized to form a plasma in the region 222 .
- the excited atom source supplies an additional volume of excited atoms to the region 222 .
- the additional volume of excited atoms displaces the plasma that is generated in the region 222 . Transporting the plasma through the region 222 into the region 232 by a rapid volume exchange of the excited atoms increases the power that can be applied to the plasma and, thus, generates a higher density plasma in the region 232 .
- the plasma generating system 200 can be configured for plasma etching or sputtering.
- the plasma generating system 200 can be configured for sputtering magnetic materials.
- Known magnetron sputtering systems generally are not suitable for sputtering magnetic materials because the magnetic field generated by the magnetron can be absorbed by the magnetic target material.
- RF diode sputtering is sometimes used to sputter magnetic materials.
- RF diode sputtering generally has poor film thickness uniformity and produces relatively low deposition rates.
- the plasma generating system 200 can be adapted to sputter magnetic materials by including a target assembly (not shown) having a magnetic target material and by driving that target assembly with a RF power supply (not shown).
- the plasma generating system 200 can include a RF power supply that provides RF power that is on order of about 10 kW.
- a substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly.
- the high-density plasma is generated by applying a strong electric field across the initial plasma as described herein.
- the RF power supply applies a negative voltage bias to the target assembly. Ions in the high-density plasma bombard the target material thereby causing sputtering.
- the plasma generating system 200 can also be adapted to sputter dielectric materials. Dielectric materials can be sputtered by driving a target assembly (not shown) including a dielectric target material with a RF power supply (not shown).
- the plasma generating system 200 can include a RF power supply that provides RF power that is on order of about 10 kW.
- a substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly.
- the plasma generating apparatus 200 of the present invention generates a relatively high electron temperature plasma and a relatively high-density plasma.
- One application for the high-density plasma of the present invention is ionized physical vapor deposition (IPVD), which is a technique that converts neutral sputtered atoms into positive ions to enhance a sputtering process.
- IPVD ionized physical vapor deposition
- the plasma generating system 200 is configured as an ion beam source.
- the plasma generating system 200 includes an additional electrode (not shown) that is used to accelerate ions in the plasma.
- the external electrode is a grid-type electrode.
- the ion beam source according to the present invention can generate a very high-density ion flux.
- the ion beam source can generate ozone flux.
- Ozone is a highly reactive oxidizing agent that can be used for many applications such as cleaning process chambers, deodorizing air, purifying water, and treating toxic wastes.
- FIG. 3 illustrates a cross-sectional view of a plasma generating apparatus 300 including one embodiment of a magnet assembly 302 according to the invention.
- the plasma generating apparatus 300 is similar to the plasma generating apparatus 200 .
- the plasma generating apparatus 300 includes the magnet assembly 302 having magnets 304 .
- the magnet assembly 302 is positioned to create a magnetic field 306 proximate to the cathode assembly 204 .
- the configuration of the magnet assembly 302 can be varied depending on the desired shape and strength of the magnetic field 306 .
- the magnet assembly 302 can have either a balanced or unbalanced configuration.
- balanced configuration we mean the magnet assembly 302 creates a symmetrical magnetic field with respect to the magnet assembly 302 .
- By “unbalanced configuration” we mean the magnet assembly 302 creates an asymmetrical magnetic field with respect to the magnet assembly 302 .
- the magnet assembly 30 - 2 rotates to further improve the uniformly of the plasma.
- the magnet assembly 302 includes switching electro-magnets (not shown), which generate a pulsed magnetic field proximate to the cathode assembly 204 .
- additional magnet assemblies are placed at various locations around and throughout the process chamber (not shown).
- the efficiency of the ionization process can be increased by applying the magnetic field 306 proximate to the cathode assembly 204 .
- the magnetic field 306 tends to trap electrons in the plasma and also tends to trap secondary electrons proximate to the cathode assembly 204 .
- the trapped electrons increase the ionization of the atoms in the feed gas 226 and/or the metastable atoms, thereby increasing the density of the plasma.
- the magnetic field 306 is generated proximate to the target 206 in order to trap electrons in the initial plasma.
- the plasma is generated by applying an electric field across the feed gas 226 as described herein.
- a RF power supply applies a negative voltage bias to the cathode assembly 204 . Ions in the plasma bombard the target material thereby causing sputtering.
- a magnetic field (not shown) is generated proximate to the plasma in the gap 220 .
- the magnetic field intersects the electric field that is generated across the gap 220 .
- the crossed electric and magnetic fields can increase the efficiency of generating the plasma in the gap 220 by trapping electrons and ions in the plasma.
- a magnetron sputtering process using a uniformly distributed plasma according to the invention accelerates ions in the plasma towards the surface of the sputtering target in a more uniform manner than with conventional magnetron sputtering. Consequently, the surface of the sputtering target is eroded more evenly and, thus higher target utilization is achieved. Additionally, the target material from the sputtering target is deposited more uniformly on a substrate (not shown) without the necessity of rotating the substrate and/or the magnetron.
- the magnetic field 306 is generated proximate to the cathode assembly 204 .
- the permanent magnets 304 continuously generate the magnetic field 306 .
- electro-magnets (not shown) generate the magnetic field 306 by energizing a current source that is coupled to the electro-magnets.
- the feed gas 226 from the gas source 228 is supplied between the cathode assembly 204 and the anode 216 .
- a volume of the feed gas 226 fills in the region 222 .
- an excited atom source such as described in connection with FIG. 6 , supplies a volume of excited atoms including metastable atoms to the region 222 .
- the power supply 202 generates an electric field 234 across the feed gas 226 to ignite the plasma in the region 222 .
- the feed gas 226 flows through the region 222 and continuously displaces the initially generated plasma.
- the plasma diffuses into the region 232 ′ and the magnetic field 306 traps electrons in the plasma.
- a large fraction of the electrons are concentrated in the region 308 that corresponds to the weakest area of the magnetic field 306 that is generated by the magnet assembly 302 .
- the magnetic field 306 substantially prevents the plasma from diffusing away from the cathode assembly 204 .
- the desired strength of the magnetic field 306 depends upon many factors, such as the volume of the plasma and the desired plasma properties. For example, in one embodiment, the strength of the magnetic field 306 is in the range of about fifty to two thousand gauss.
- the power supply 202 generates an electric field 234 across a volume of excited atoms including metastable atoms that are generated by an excited atom source.
- the electric field 234 generates the plasma in the region 222 .
- an additional volume of excited atoms including metastable atoms continues to flow through the region 222 and displaces the plasma.
- the plasma diffuses into the region 232 ′ as described herein.
- the magnetic field 306 traps electrons in the plasma. A large fraction of the trapped electrons are concentrated in the region 308 that corresponds to the weakest area of the magnetic field 306 . By trapping electrons in the plasma, the magnetic field 306 prevents the plasma from diffusing away from the cathode assembly 204 .
- the magnetic field 306 improves the homogeneity of the high-density plasma.
- the magnetic field 306 also increases the ion density of the high-density plasma by trapping electrons in the initial plasma and also by trapping secondary electrons proximate to the cathode assembly 204 .
- the trapped electrons ionize ground state atoms and excited atoms in the initial plasma thereby generating the high-density plasma.
- a magnetic field is generated in the region 222 to substantially trap electrons in the area where the plasma is initially ignited.
- the magnetic field 306 also promotes increased homogeneity of the plasma by setting up a substantially circular electron E ⁇ B drift current 310 proximate to the cathode assembly 204 .
- the electron E ⁇ B drift current 310 generates a magnetic field that interacts with the magnetic field 306 generated by the magnet assembly 302 .
- the cathode assembly 204 When high-power pulses are applied between the cathode assembly 204 and the anode 216 , secondary electrons are generated from the cathode assembly 204 that move in a substantially circular motion proximate to the cathode assembly 204 according to crossed electric and magnetic fields.
- the substantially circular motion of the electrons generates the electron E ⁇ B drift current 310 .
- the magnitude of the electron E ⁇ E drift current 310 is proportional to the magnitude of the discharge current in the plasma and, in one embodiment, is approximately in the range of about three to ten times the magnitude of the discharge current.
- the substantially circular electron E ⁇ B drift current 310 generates a magnetic field that interacts with the magnetic field 306 generated by the magnet assembly 302 .
- the magnetic field generated by the electron E ⁇ B drift current 310 has a direction that is substantially opposite to the magnetic field 306 generated by the magnet assembly 302 .
- the magnitude of the magnetic field generated by the electron E ⁇ B drift current 310 increases with increased electron E ⁇ B drift current 310 .
- the homogeneous diffusion of the plasma in the region 232 ′ is caused, at least in part, by the interaction of the magnetic field 306 generated by the magnet assembly 302 and the magnetic field generated by the electron E ⁇ B drift current 310 .
- the electron E ⁇ B drift current 310 defines a substantially circular shape for low current density plasma.
- the substantially circular electron E ⁇ B drift current 310 tends to have a more complex shape as the interaction of the magnetic field 306 generated by the magnet assembly 302 , the electric field generated by the power supply 202 , and the magnetic field generated by the electron E ⁇ B drift current 310 becomes more acute.
- the electron E ⁇ B drift current 310 has a substantially cycloidal shape. The exact shape of the electron E ⁇ B drift current 310 depends on various factors.
- the magnetic field generated by the electron E ⁇ B drift current 310 becomes stronger and eventually overpowers the magnetic field 306 generated by the magnet assembly 302 .
- the magnetic field lines that are generated by the magnet assembly 302 exhibit substantial distortion that is caused by the relatively strong magnetic field that is generated by the relatively large electron E ⁇ B drift current 310 .
- a large electron E ⁇ B drift current 310 generates a stronger magnetic field that strongly interacts with and can begin to dominate the magnetic field 306 that is generated by the magnet assembly 302 .
- the interaction of the magnetic field 306 generated by the magnet assembly 302 and the magnetic field generated by the electron E ⁇ B drift current 310 generates magnetic field lines that are somewhat more parallel to the surface of the cathode assembly 204 than the magnetic field lines generated by the magnet assembly 302 .
- the somewhat more parallel magnetic field lines results in a more uniformly distributed plasma in the area 232 ′.
- FIG. 4 illustrates a graphical representation 400 of the power as a function of time for periodic pulses applied to a plasma generated by the plasma generating system 200 of FIG. 2 and the plasma generating system 300 of FIG. 3 .
- the feed gas 226 flows into the region 222 between the cathode assembly 208 and the anode 216 at time t 0 , before the power supply 202 is activated.
- the time required for a sufficient quantity of feed gas 226 to flow into the region 222 depends on several factors including the flow rate of the feed gas 226 and the desired operating pressure.
- the power supply 202 generates a power pulse 402 that is in the range of about 0.01 kW to 100 kW and applies the power pulse 402 between the cathode assembly 204 and the anode 216 .
- the power pulse 402 causes atoms in the feed gas 226 to become either excited or ionized, thereby generating the plasma.
- An additional volume of feed gas 226 flows into the region 222 between time t 1 and time t 2 substantially displacing the initially generated plasma. The plasma is displaced into the region 232 proximate to the sputtering target 206 .
- the pulse width of the power pulse 402 is in the range of about one microsecond to ten seconds.
- the power pulse 402 is terminated at time t 3 .
- the power supply 202 supplies a continuously applied nominal power to sustain the plasma, while the power supply 202 prepares to deliver another power pulse 406 .
- the power supply 202 delivers another power pulse 406 having a rise time from t 4 to t 5 and terminating at time t 6 .
- the repetition rate of the power pulses 402 , 406 is in the range of about 0.1 Hz to 10 kHz.
- the particular size, shape, width, and frequency of the power pulses 402 , 406 depend on the process parameters, such as the operating pressure, the design of the power supply 202 , the presence of a magnetic field proximate to the cathode assembly 204 , and the volume and characteristics of the plasma, for example.
- the shape and duration of the leading edge 404 and the trailing edge 408 of the power pulse 402 are chosen to control the rate of ionization of the plasma.
- FIG. 5 is a cross-sectional view of another embodiment of a plasma generating apparatus 500 according to the present invention.
- the plasma generating apparatus 500 includes a power supply 502 .
- the power supply 502 can be any type of power supply, such as a pulsed power supply, a radio-frequency (RF) power supply, a direct-current (DC) power supply, or an alternating-current (AC) power supply.
- RF radio-frequency
- DC direct-current
- AC alternating-current
- the plasma generating apparatus 500 also includes a cathode assembly 504 .
- the plasma generating apparatus 500 is configured for magnetron sputtering.
- the cathode assembly 504 includes a target 506 and a cathode 508 .
- the cathode assembly 504 is substantially disk-shaped and includes a centered aperture.
- the cathode assembly 504 can be configured to include a hollow cathode 510 located at the centered aperture of the cathode assembly 504 .
- An anode 512 is positioned in the center of the hollow cathode 510 .
- the hollow cathode 510 includes an inner surface 514 that substantially surrounds the anode 512 .
- the inner surface 514 is a cylindrical wall.
- target material covers the inner surface 514 of the hollow cathode 510 .
- the inner surface 514 forms a gap 515 with the anode 512 .
- the anode 512 and/or the inner surface 514 can include multiple protuberances, raised areas, depressed areas, surface anomalies, or shapes that control the ionization process.
- the pressure in the gap 515 can be optimized by including a raised area or protuberance on the surface of the anode 512 and/or on the inner surface 514 .
- a first output 516 of the power supply 502 is coupled to the cathode assembly 504 .
- a second output 518 of the power supply 502 is coupled to the anode 512 .
- the second output 518 of the power supply 502 and the anode 512 are both coupled to ground.
- the plasma generating apparatus 500 also includes the gas source 228 .
- the feed gas 226 is supplied to the hollow cathode 510 through a gas line 520 .
- a gas flow controller 230 such as a mass flow controller or gas valve controls the flow of the feed gas 226 to the hollow cathode 510 .
- the plasma generating apparatus 500 includes an excited atom source, such as the excited atom source that is described in connection with FIG. 6 .
- the excited atom source receives ground state atoms from the gas source 228 and excites the ground state atoms to an excited state, thereby generating excited atoms including metastable atoms from the ground state atoms.
- the excited atom source provides the excited atoms to the hollow cathode 510 .
- the plasma generating apparatus 500 also includes a plasma shaping device 522 .
- the shape and size of the plasma shaping device 522 is chosen so as to optimize the shape and distribution of the plasma that is generated by the hollow cathode 510 .
- the plasma shaping device 522 is formed in the shape of a plate.
- the plasma shaping device 522 can be any desired shape according to the present invention.
- the plasma shaping device 522 is coated with target material so as to reduce contamination in the chamber due to unintended sputtering from the plasma shaping device 522 .
- the plasma generating apparatus 500 also includes a magnet assembly 302 that generates a magnetic field 306 as described herein. Any type of magnet assembly can be used.
- the magnetic field 306 can assist in distributing the plasma as described with reference to FIG. 3 .
- a volume of feed gas 226 from the gas source 228 and/or a volume of excited atoms from an excited atom source are supplied to the hollow cathode 510 through the gas flow controller 230 .
- the feed gas 226 and/or the excited atoms are supplied through the gap 515 between the anode 512 and the inner surface 514 of the cathode assembly 504 .
- the power supply 502 generates a voltage between the cathode assembly 504 and the anode 512 that is large enough to ignite a plasma in the gap 515 .
- the gas flow controller 230 supplies an additional volume of feed gas 226 and/or an additional volume of excited atoms to the gap 515 while the hollow cathode 510 generates the plasma.
- the additional volume of feed gas 226 and/or the additional volume of excited atoms substantially displace the plasma in the hollow cathode 510 .
- This volume exchange forces the plasma towards the plasma shaping apparatus 522 .
- the plasma shaping apparatus 522 deflects the plasma such that it flows proximate to the target 506 .
- the combination of the volume exchange and the plasma deflection creates a uniformly distributed plasma proximate to the target 506 .
- the magnetic field 306 contributes to an even more uniform plasma as discussed with reference to FIG. 3 .
- the plasma generating apparatus 500 can result in the formation of a relatively high-density plasma as compared with conventional plasma generators because a relatively high power can be absorbed in the plasma.
- additional feed gas 226 and/or excited atoms can be applied to the plasma.
- the additional feed gas 226 and excited atoms can absorb the additional power that would otherwise cause the plasma to contract and terminate.
- FIG. 6 illustrates a cross-sectional view of an excited atom generator 600 that includes an excited atom source 602 according to the invention.
- an excited atom generator 600 is described in co-pending U.S. patent application Ser. No. 10/249,202 entitled “Plasma Generation Using Multi-Step Ionization,” filed on Mar. 21, 2003, which is assigned to the present assignee. The entire disclosure of U.S. patent application Ser. No. 10/249,202 is incorporated herein by reference.
- the excited atom generator 600 includes the gas source 228 and the gas flow controller 230 . There are many possible configurations for the excited atom generator 600 .
- a gas source 228 supplies ground state atoms 603 of a feed gas to the excited atom source 602 .
- the excited atom generator 600 also includes a power supply 604 .
- the power supply 604 can be a direct-current (DC), an alternating-current (AC), a radio-frequency (RF), or a pulsed power supply, for example.
- a first output 624 of the power supply 604 is coupled to a first input 626 of the excited atom source 602 with a first transmission line 628 .
- a second output 630 of the power supply 604 is coupled to a second input 632 of the excited atom source 602 with a second transmission line 634 .
- the first input 626 of the excited atom source 602 is coupled to a first electrode 636 in the excited atom source 602 .
- the second input 632 of the excited atom source 602 is coupled to a second electrode 638 in the excited atom source 602 .
- An output 606 of the gas source 228 is coupled to one end of a gas line 605 .
- the other end of the gas line 605 is coupled to an input 608 of the gas controller 230 .
- An output 612 of the gas controller 230 is coupled to one end of second gas line 610 .
- the other end of the second gas line 610 is coupled to an input 614 of the excited atom source 602 .
- a volume of excited atoms including metastable atoms exits the excited atom source 602 through the output 616 .
- ground state atoms 603 from the gas source 228 flow to the excited atom source 602 though the gas flow controller 230 .
- the gas flow controller 230 controls the flow rate of the ground state atoms 603 .
- the ground state atoms 603 flow between the first electrode 636 and the second electrode 638 .
- the first 636 and the second electrodes 638 are charged by the power supply 604 , such that a discharge is created in a discharge region 640 between the first 636 and the second electrodes 638 .
- At least a portion of the ground state atoms 603 that are injected through the discharge region 640 are energized to an excited state, such as a metastable state.
- a large portion of the exited atoms 618 are metastable atoms.
- the term “metastable atoms” is defined herein to mean excited atoms having energy levels from which dipole radiation is theoretically forbidden. Metastable atoms have relatively long lifetimes compared with other excited atoms. Metastable atoms are created because, in theory, the selection rules forbid relaxation of these excited atoms to the ground state and the emission of dipole radiation. However, the selection rules were determined using certain approximations. Consequently, in practice, there is a finite probability that the metastable atoms relax to the ground state and emit dipole radiation. The actual lifetime of metastable atoms is on order of milliseconds to minutes.
- All noble gas atoms have metastable states.
- argon has two metastable states, see, for example, Fabrikant, I. I., Shpenik, O. B., Snegursky, A. V., and Zavilopulo, A. N., Electron Impact Formation of Metastable Atoms , North-Holland, Amsterdam.
- Argon metastable atoms can be generated by applying a sufficient voltage across argon feed gas containing ground state argon atoms. When an ionizing electron (e ⁇ ) collides with a ground state argon (Ar) atom, a metastable argon atom and an electron are generated.
- Argon atoms require a minimum of 11.56 eV of energy to reach one of its two metastable states. Whereas, 15.76 eV of energy is required to eject the electron and ionize the atom. Therefore, the energy required to excite ground state argon atoms to a metastable state is lower than the 15.76 eV energy that is required to ionize ground state argon atoms. Thus, a large number of argon atoms can be energized to a metastable state using less energy then would be required to directly ionize the argon atoms.
- a relatively small volume of ions 620 and electrons 622 , as well as some ground state atoms 603 can be present in the volume of excited atoms 618 including the metastable atoms.
- the output 616 of the excited atom source 602 can be coupled to one or more of the gas lines 224 of the plasma generating apparatus 200 of FIG. 2 to supply excited atoms 618 to the region 222 .
- the output 616 of the excited atom source 602 can also be coupled to the gas line 520 of the plasma generating apparatus 500 of FIG. 5 to supply excited atoms 618 to the hollow cathode 510 .
- the volume of ions 620 and the volume of electrons 622 are removed from the volume of excited atoms 618 before the excited atoms 618 are injected into the gas lines 224 ( FIG. 2 ) or the gas line 520 ( FIG. 5 ), as described herein.
- the excited atoms 618 facilitate a multi-step or stepwise ionization process to generate the plasma.
- multi-step ionization process is defined herein to mean an ionization process whereby ions are ionized in at least two distinct steps. For example, in a first step, atoms are excited from a ground state to an excited state; and in a second step, the atoms in the excited state are further excited and ionized.
- multi-step ionization process also includes ionization processes with three or more steps.
- ground state atoms 603 are energized to an energy that ionizes the atoms, thereby releasing ions 620 and electrons 622 into the stream of exited atoms 618 .
- the excited atoms 218 , the free ions 620 and electrons 622 then pass through the output 616 of the excited atom source 602 .
- ground state atoms 603 can also be present in the stream of excited atoms 618 .
- the ground state atoms 603 can originate from the gas source 228 or can be excited atoms that have decayed back to a ground state.
- excited atoms 618 in the plasma process require less energy to ionize than ground state atoms 603 .
- a metastable argon atom 618 requires only about 4 eV of energy to ionize as compared with about 15.76 eV of energy required to ionize an argon ground state atom 603 .
- the difference between exciting a ground state atom 603 to an excited state, such as a metastable state, and ionizing a ground state atom 603 is discussed below.
- Argon atoms can be ionized by a two-step ionization process.
- ionizing electrons e ⁇ are generated by applying a sufficient voltage between two electrodes.
- an ionizing electron e ⁇ collides with a ground state argon (Ar) atom, a metastable argon atom and an electron are generated. Metastable atoms can be present in considerable densities in weakly ionized discharges.
- an ionizing electron e ⁇ collides with the metastable argon atom and the metastable argon atom is ionized and two electrons are generated, as shown below.
- Plasma generation using multi-step ionization according to the present invention is described in connection with the generation of metastable atoms.
- the present invention is not limited to multi-step ionization using metastable atoms.
- Plasma generation using multi-step ionization according to the present invention can be achieved by generating metastable molecules.
- Controlling the pressure in the excited atom source 602 can increase the volume of exited atoms 618 that are generated by the excited atom source 602 .
- a pressure at the input 614 of the excited atom source 602 is lower than a pressure at the output 616 of the excited atom source 602 .
- the pressure differential increases the efficiency with which the excited atoms 618 are generated by the excited atom source 602 .
- a diameter of the input 614 can be chosen to be greater than a diameter of the output 616 . This difference in diameters can be used to optimize the pressure in the discharge region 640 and therefore increase the efficiency with which the excited atoms 618 are generated.
- the power supply 202 generates the electric field 234 proximate to the volume of excited atoms 618 between the cathode assembly 204 and the anode 216 .
- the electric field 234 raises the energy of the volume of excited atoms 618 causing collisions between neutral atoms, electrons, and excited atoms 618 . These collisions generate the plasma in the region 222 .
- the plasma can include ions, metastable atoms and additional excited atoms 618 .
- the efficiency of the multi-step ionization process increases as the density of excited atoms 618 in the region 222 increases.
- the multi-step ionization process described herein substantially increases the rate at which a plasma is formed and, therefore, generates a relatively dense plasma.
- the rate is increased because only a relatively small amount of energy is required to ionize the excited atoms 618 .
- the efficiency of the ionization process rapidly increases.
- the increased efficiency results in an avalanche-like process that substantially increases the density of the plasma.
- the ions in the plasma strike the cathode assembly 204 ( FIG. 2 ) causing the secondary electron emission from the cathode assembly 204 .
- the secondary electrons interact with ground state atoms 603 and with the excited atoms 618 in the plasma. This interaction further increases the density of ions in the plasma as additional volumes of excited atoms 618 enter the region 222 .
- the density of the plasma that is generated by the multi-step ionization process according to the present invention is significantly greater than a plasma that is generated by direct ionization of ground state atoms 603 .
- FIG. 7 is a flowchart 700 of an illustrative process of generating a uniformly-distributed plasma according to the present invention.
- a magnetic field 306 FIG. 3
- the feed gas 226 FIG. 2
- the volume and the flow rate of the feed gas 226 are controlled by the feed gas controller 230 .
- excited atoms 618 FIG. 6
- the excited atom source 602 flow into the region 222 ( FIG. 2 ).
- the power supply 202 After a suitable volume of the feed gas 226 and/or excited atoms 618 is supplied to the region 222 , the power supply 202 generates a voltage across the feed gas 226 and/or the excited atoms 618 in the region 222 (step 704 ). The voltage generates an electric field that is large enough to ignite the feed gas 226 and/or the excited atoms 618 to generate the plasma. Additional feed gas 226 and/or excited atoms 618 flows into the region 222 while the plasma is being generated, thereby forcing the plasma to diffuse into the region 232 proximate to the target 206 (step 706 ). This process continues until a suitable volume of plasma is located in the region 232 proximate to the target 206 (step 708 ). The plasma that is located in the region 232 proximate to the target 206 is substantially uniformly-distributed.
Abstract
Methods and apparatus for generating uniformly-distributed plasma are described. A plasma generator according to the invention includes a cathode assembly that is positioned adjacent to an anode and forming a gap there between. A gas source supplies a volume of feed gas and/or a volume of excited atoms to the gap between the cathode assembly and the anode. A power supply generates an electric field across the gap between the cathode assembly and the anode. The electric field ionizes the volume of feed gas and/or the volume of excited atoms that is supplied to the gap, thereby creating a plasma in the gap.
Description
- Plasma is considered the fourth state of matter. A plasma is a collection of charged particles moving in random directions that is, on average, electrically neutral. One method of generating a plasma is to pass a current through a low-pressure gas that is flowing between two parallel conducting electrodes. Once certain parameters are met, the gas “breaks down” to form the plasma. For example, a plasma can be generated by applying a potential of several kilovolts between two parallel conducting electrodes in an inert gas atmosphere (e.g., argon) at a pressure that is in the range of about 10−1 to 10−2 Torr.
- Plasma processes are widely used in many industries, such as the semiconductor manufacturing industry. For example, plasma etching is commonly used to etch substrate material and films deposited on substrates in the electronics industry. There are four basic types of plasma etching processes that are used to remove material from surfaces: sputter etching, pure chemical etching, ion energy driven etching, and ion inhibitor etching.
- Plasma sputtering is a technique that is widely used for depositing films on substrates. Sputtering is the physical ejection of atoms from a target surface and is sometimes referred to as physical vapor deposition (PVD). Ions, such as argon ions, are generated and then are drawn out of the plasma, and are accelerated across a cathode dark space. The target surface has a lower potential than the region in which the plasma is formed. Therefore, the target surface attracts positive ions.
- Positive ions move towards the target with a high velocity and then impact the target and cause atoms to physically dislodge or sputter from the target surface. The sputtered atoms then propagate to a substrate or other work piece where they deposit a film of sputtered target material. The plasma is replenished by electron-ion pairs formed by the collision of neutral molecules with secondary electrons generated at the target surface.
- Reactive sputtering systems inject a reactive gas or mixture of reactive gases into the sputtering system. The reactive gases react with the target material either at the target surface or in the gas phase, resulting in the deposition of new compounds. The pressure of the reactive gas can be varied to control the stoichiometry of the film. Reactive sputtering is useful for forming some types of molecular thin films.
- Magnetron sputtering systems use magnetic fields that are shaped to trap and concentrate secondary electrons proximate to the target surface. The magnetic fields increase the density of electrons and, therefore, increase the plasma density in a region that is proximate to the target surface. The increased plasma density increases the sputter deposition rate.
- This invention is described with particularity in the detailed description. The above and further advantages of this invention may be better understood by referring to the following description in conjunction with the accompanying drawings, in which like numerals indicate like structural elements and features in various figures. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
-
FIG. 1 illustrates a cross-sectional view of a known plasma sputtering apparatus having a direct current (DC) power supply. -
FIG. 2 illustrates a cross-sectional view of a plasma generating apparatus according to one embodiment of the invention. -
FIG. 3 illustrates a cross-sectional view of a plasma generating apparatus including one embodiment of a magnet assembly according to the invention. -
FIG. 4 illustrates a graphical representation of the power as a function of time for periodic pulses applied to a plasma generated by the plasma generating system ofFIG. 2 . -
FIG. 5 is a cross-sectional view of another embodiment of a plasma generating apparatus according to the present invention. -
FIG. 6 illustrates a cross-sectional view of an excited atom generator that includes an excited atom source according to the invention. -
FIG. 7 is a flowchart of an illustrative process of generating a uniformly-distributed plasma according to the present invention. -
FIG. 1 illustrates a cross-sectional view of a knownplasma generating apparatus 100 having aDC power supply 102. The knownplasma generating apparatus 100 includes avacuum chamber 104 where aplasma 105 is generated. Thevacuum chamber 104 can be coupled to ground. Thevacuum chamber 104 is positioned in fluid communication with avacuum pump 106 via aconduit 108 and avalve 109. Thevacuum pump 106 is adapted to evacuate thevacuum chamber 104 to high vacuum. The pressure inside thevacuum chamber 104 is generally less than 10−b 1 Torr. Afeed gas 110 from afeed gas source 111, such as an argon gas source, is introduced into thevacuum chamber 104 through agas inlet 112. The gas flow is controlled by avalve 113. - The
plasma generating apparatus 100 also includes acathode assembly 114. Thecathode assembly 114 is generally in the shape of a circular disk. Thecathode assembly 114 can include atarget 116. Thecathode assembly 114 is electrically connected to a first terminal 118 of theDC power supply 102 with anelectrical transmission line 120. Aninsulator 122 isolates theelectrical transmission line 120 from a wall of thevacuum chamber 104. Ananode 124 is electrically connected to asecond terminal 126 of theDC power supply 102 with anelectrical transmission line 127. Aninsulator 128 isolates theelectrical transmission line 127 from the wall of thevacuum chamber 104. Theanode 124 is positioned in thevacuum chamber 104 proximate to thecathode assembly 114. Aninsulator 129 isolates theanode 124 from thecathode assembly 114. Theanode 124 and thesecond output 126 of theDC power supply 102 are coupled to ground in some systems. - The
plasma generating apparatus 100 illustrates a magnetron sputtering system that includes amagnet 130 that generates amagnetic field 132 proximate to thetarget 116. Themagnetic field 132 is strongest at the poles of themagnet 130 and weakest in theregion 134. Themagnetic field 132 is shaped to trap and concentrate secondary electrons proximate to the target surface. The magnetic field increases the density of electrons and, therefore, increases the plasma density in a region that is proximate to the target surface. - The
plasma generating apparatus 100 also includes asubstrate support 136 that holds asubstrate 138 or other work piece. Thesubstrate support 136 can be electrically connected to afirst terminal 140 of aRF power supply 142 with anelectrical transmission line 144. Aninsulator 146 isolates theRF power supply 142 from a wall of thevacuum chamber 104. Asecond terminal 148 of theRF power supply 142 is coupled to ground. - In operation, the
feed gas 110 from thefeed gas source 111 is injected into thechamber 104. TheDC power supply 102 applies a DC voltage between thecathode assembly 114 and theanode 124 that causes anelectric field 150 to develop between thecathode assembly 114 and theanode 124. The amplitude of the DC voltage is chosen so that it is sufficient to cause the resultingelectric field 150 to ionize thefeed gas 110 in thevacuum chamber 104 and to ignite theplasma 105. - The ionization process in a known plasma sputtering apparatus is generally referred to as direct ionization or atomic ionization by electron impact and can be described by the following equation:
Ar+e −→Ar++2e − -
- where Ar represents a neutral argon atom in the
feed gas 110 and e− represents an ionizing electron generated in response to the voltage applied between thecathode assembly 114 and theanode 124. The collision between the neutral argon atom and the ionizing electron results in an argon ion (Ar+) and two electrons.
- where Ar represents a neutral argon atom in the
- The
plasma 105 is maintained, at least in part, by secondary electron emission from thecathode assembly 114. Themagnetic field 132 that is generated proximate to thecathode assembly 114 confines the secondary electrons in theregion 134 and, therefore, confines theplasma 105 approximately in theregion 134. The confinement of theplasma 105 in theregion 134 increases the plasma density in theregion 134 for a given input power. - The
cathode assembly 114 is negatively biased so that ions in theplasma 105 bombard thetarget 116. The impact caused by these ions bombarding thetarget 116 dislodges or sputters material from thetarget 116. A portion of the sputtered material forms a thin film of sputtered target material on thesubstrate 138. - Known magnetron sputtering systems have relatively poor target utilization. The term “poor target utilization” is defined herein to mean undesirable non-uniform erosion of target material. Poor target utilization is caused by a relatively high concentration of positively charged ions in the
region 134 that results in a non-uniform plasma. Similarly, magnetron etching systems (not shown) typically have relatively non-uniform etching characteristics. - Increasing the power applied to the plasma can increase the uniformity and density of the plasma. However, increasing the amount of power necessary to achieve even an incremental increase in uniformity and plasma density can significantly increase the probability of establishing an electrical breakdown condition leading to an undesirable electrical discharge (an electrical arc) in the
chamber 104. - Applying pulsed direct current (DC) to the plasma can be advantageous since the average discharge power can remain relatively low while relatively large power pulses are periodically applied. Additionally, the duration of these large voltage pulses can be preset so as to reduce the probability of establishing an electrical breakdown condition leading to an undesirable electrical discharge. An undesirable electrical discharge will corrupt the plasma process and can cause contamination in the
vacuum chamber 104. However, very large power pulses can still result in undesirable electrical discharges regardless of their duration. - In one embodiment, an apparatus according to the present invention generates a plasma having a higher density of ions for a giving input power than a plasma generated by known plasma systems, such as the
plasma generating apparatus 100 ofFIG. 1 . A plasma generating apparatus according to the present invention generates a uniform plasma proximate to a cathode assembly. -
FIG. 2 is a cross-sectional view of aplasma generating apparatus 200 according to one embodiment of the invention. In the embodiment shown, theplasma generating apparatus 200 is configured for physical vapor deposition (PVD). In other embodiments (not shown), theplasma generating apparatus 200 is configured for etching a substrate (not shown). Theplasma generating apparatus 200 can also be configured for chemical vapor deposition (CVD). - The
plasma generating apparatus 200 includes a chamber (not shown), such as a vacuum chamber that confines the plasma. The chamber can be coupled to a vacuum system (not shown). Theplasma generating apparatus 200 includes apower supply 202. Theplasma generating apparatus 200 also includes acathode assembly 204 that comprises acathode 208 and atarget 206. Some embodiments of theplasma generating apparatus 200 of the present invention that are used for etching do not include a target. In one embodiment, thecathode 208 is formed of a metal material such as stainless steel or any other chemically inert material that does not react with reactive gases. - A
first output 212 of thepower supply 202 is coupled to aninput terminal 210 of thecathode assembly 204. Asecond output 214 of thepower supply 202 is coupled to aninput terminal 215 of ananode 216. Aninsulator 218 isolates theanode 216 from thecathode assembly 204. In one embodiment (not shown), thesecond output 214 of thepower supply 202 and theanode 216 are coupled to ground. - The
power supply 202 can be any type of power supply suitable for generating and maintaining a plasma, such as a direct current (DC) power supply, an alternating current (AC) power supply, a radio-frequency (RF) power supply, or a pulsed DC power supply. AC power supplies can require less power to generate and maintain a plasma than DC power supplies. In other embodiments (not shown), the plasma is generated and maintained through the use of a planar discharge, an electron cyclotron resonance (ECR), a capacitively coupled plasma discharge (CCP), a helicon plasma source or an inductively coupled plasma (ICP) discharge. In yet other embodiments (not shown), the plasma is generated and maintained by techniques, such as UV radiation techniques, X-ray techniques, microwave techniques, electron beam techniques, ion beam techniques, or ionizing filament techniques, for example. - In one embodiment, the
power supply 202 is a pulsed power supply. In one embodiment, thefirst output 212 of thepower supply 202 couples a negative voltage pulse to theinput terminal 210 of thecathode assembly 204. In another embodiment, thesecond output 214 of thepower supply 202 couples a positive voltage pulse to theinput terminal 215 of theanode 216. - The
anode 216 is positioned so as to form agap 220 between theanode 216 and thecathode assembly 204 that is sufficient to allow current to flow through aregion 222 between theanode 216 and thecathode assembly 204. In one embodiment, the width of thegap 220 is in the range of about 0.3 cm to 10 cm. The width of thegap 220 as well as the surface area of theanode 216 determines the volume of theregion 222. Thegap 220 and the total volume of theregion 222 are parameters in the ionization process as described herein. The dimensions of thegap 220 can be varied throughout theregion 222 between theanode 216 and thecathode assembly 204. - In the embodiment shown in
FIG. 2 , theanode 216 includes aprotuberance 221 that reduces a portion of thegap 220 between theanode 216 and thecathode assembly 204. The dimensions of theprotuberance 221 can be varied to control a pressure in theregion 222. Controlling in theregion 222 can increase the efficiency of generating a plasma according to the invention. - In some embodiments (not shown), the
anode 216 and/or thecathode 208 can include multiple protuberances, raised areas, depressed areas, surface anomalies, or shapes that control the ionization process. For example, the pressure in theregion 222 can be optimized by including a raised area or protuberance (not shown) on the surface of thecathode 208. The raised area can create a narrow passage at a location in theregion 222 between theanode 216 and thecathode 208. - One or
more gas lines 224 provide feed gas 226 (indicated by arrow) from afeed gas source 228 to the chamber (not shown). Thefeed gas 226 can be supplied to thegap 220 between thecathode assembly 204 and theanode 216. In one embodiment, thegas lines 224 are isolated from the chamber and other components byinsulators 229. In other embodiments, thegas lines 224 are isolated from thefeed gas source 228 by using in-line insulating couplers (not shown). Thefeed gas source 228 can contain any type offeed gas 226 suitable for plasma generation and processing, such as argon. In some embodiments, thefeed gas 226 includes a mixture of different gases, such as a mixture of reactive gases, pure reactive gases or non-reactive gases. In one embodiment, thefeed gas 226 includes a noble gas or a mixture of noble gases. Agas flow controller 230 controls the flow rate of thefeed gas 226. Thegas flow controller 230 can be any type of flow controller, such as a simple gas valve or a mass flow controller that precisely meters the feed gas entering into the chamber. - In one embodiment (not shown), an excited atom source, such as the excited atom source described in connection with
FIG. 6 , is disposed between thegas source 228 and the chamber. In this embodiment, thegas source 228 supplies a volume of ground state gas atoms to the excited atom source. The excited atom source generates excited atoms including metastable atoms from the ground state atoms and provides the excited atoms including the metastable atoms to the chamber. The excited atom source can provide the excited atoms directly betweencathode assembly 204 and theanode 216. - In operation, the
feed gas 226 from thefeed gas source 228 flows through thegas flow controller 230 into the chamber. In the embodiment that includes the excited atom source, thefeed gas 226 flows to the excited atom source. The excited atom source generates excited atoms including metastable atoms from ground state feed gas atoms and provides the excited atoms including the metastable atoms to the chamber. - The flow rate of the
feed gas 226 is controlled so as to create the desired chamber pressure. The desired chamber pressure depends on other operating parameters, such as the geometry of theplasma generating apparatus 200 and the desired plasma properties. For example, in one embodiment, the pressure in the chamber can be in the range of about 1 mTorr to 10 Torr. - In one embodiment, the
feed gas 226 or the excited atoms are directly supplied to thegap 220 between thecathode assembly 204 and theanode 216. Directly supplying thefeed gas 226 or the excited atoms to thegap 220 between thecathode assembly 204 and theanode 216 creates a pressure differential between theregion 222 and aregion 232 that is located outside of thegap 220. This pressure differential is generated, at least in part, by the difference in the volume in theregion 222 and the volume in theregion 232. - Adjusting dimensions of the
protuberance 221 changes the pressure in theregion 222. Since the volume in theregion 222 is generally less than the volume in theregion 232, the pressure in theregion 222 is higher than the pressure in theregion 232. This pressure differential causes a rapid volume exchange offeed gas 226 in theregion 222 between thecathode assembly 204 and theanode 216. The pressure differential can also improve the efficiency of the ionization of a plasma in theregion 222. In addition, the pressure differential can increase the velocity of the ions in the plasma flowing through thegap 220. - Once a suitable volume of
feed gas 226 is present in theregion 222, thepower supply 202 applies a voltage between thecathode 208 and theanode 216. In some embodiments, thepower supply 202 applies a voltage potential between thecathode 208 and theanode 216 before thefeed gas 226 is injected. In other embodiments, thepower supply 202 applies a voltage pulse between thecathode 208 and theanode 216 after thefeed gas 226 is injected. - The desired amplitude of the voltage pulses depends on many factors, such as the desired volume and characteristics of the plasma. For example, in one embodiment, the amplitude of the voltage pulses generated by the
power supply 202 is in the range of about 50V to 30 kV and the peak current level is in the range of about 1 A to 5 kA. In this embodiment, the width of the voltage pulses is in the range of about 0.1 microsecond to one hundred seconds and the repetition rate of the pulses is below 1 kHz. The resulting peak plasma density of the plasma depends on many factors, such as the geometry of the plasma generating system. For example, in one embodiment, the peak plasma density is in the range of about 107 to 1016 cm−3 for argon feed gas. - The
power supply 202 generates a voltage and a current that is large enough to ignite the plasma in theregion 222. For example, thepower supply 202 can generate an initial voltage that is sufficient to create a plasma discharge voltage that is in the range of about 100V to 1 kV with a discharge current between thecathode 208 and theanode 216 that is in the range of about 0.1 A to 100 A. The desired value of the discharge current is a function of the volume of the plasma and the desired plasma properties. The presence of a magnetic field (not shown) in theregion 222 can have a dramatic effect on the required values for the voltage and current that are necessary to generate a plasma with the desired characteristics. - In one embodiment, excited atoms including metastable atoms from the excited atom source are injected in the
region 222 between thecathode assembly 204 and theanode 216. Since metastable atoms require less energy to ionize than a similar volume of ground state atoms, the metastable atoms ionize at a higher rate than ground state atoms for the same input energy. In one embodiment, the excited atom source excites ground state atoms to generate excited atoms including metastable atoms and thepower supply 202 generates a voltage that is sufficient to ionize the excited atoms including the metastable atoms to generate a plasma. This multi-step plasma is discussed in more detail herein. - The combination of forming the plasma in the
gap 220 while injecting additional feed gas and/or excited atoms into theregion 222 substantially reduces the probability of establishing a breakdown condition in the chamber when a large power is applied between thecathode 208 and theanode 216. Theadditional feed gas 226 and/or the excited atoms commingle with the plasma to allow a greater amount of power to be absorbed by the plasma before the plasma contracts and a breakdown condition occurs. - In one embodiment, the plasma tends to diffuse homogenously in the
region 232 thereby creating a relatively homogeneous plasma volume. The pressure gradient responsible for this homogenous diffusion is described in more detail herein. Homogeneous plasma volumes are advantageous for many plasma processes. For example, plasma etching processes using homogenous plasma volumes accelerate ions in the high-density plasma towards a surface of a substrate (not shown) being etched in a more uniform manner than conventional plasma etching. Consequently, the surface of the substrate is etched more uniformly. Plasma processes using homogeneous plasma volumes can achieve high uniformity without the necessity of rotating the substrate. - Also, magnetron sputtering systems using homogenous plasma volumes accelerate ions in the high-density plasma towards a surface of the
sputtering target 206 in a more uniform manner than conventional magnetron sputtering. Consequently, the target material is deposited more uniformly on a substrate (not shown) without the necessity of rotating the substrate and/or the magnetron. Also, the surface of thesputtering target 206 is eroded more evenly and, thus higher target utilization is achieved. In one embodiment, theanode 216 includes target material in order to reduce possible contamination from sputtering undesired material. - The
plasma generating apparatus 200 can be operated in a pulsed power mode. In this mode, relatively high power pulses can be applied to the plasma, while keeping the average applied power relatively low. In this mode, thepower supply 202 is a pulsed power supply that generates high-power pulses in the range of about 1 kW to 10 MW. For example, in one embodiment, thepower supply 202 generates high-power pulses that form a plasma having a discharge current that is in the range of about 1 A to 5 kA and a discharge voltage that is in the range of about 50V to 500V for a pressure that is in the range of about 1 mTorr to 10 Torr. - Each of the high-power pulses is maintained for a predetermined time that, in some embodiments, is in the range of about one microsecond to ten seconds. In one embodiment, the repetition frequency or repetition rate of the high-power pulses is in the range of about 0.1 Hz to 1 kHz. The average power generated by the
second power supply 222 can be less than one megawatt depending on the desired volume and characteristics of the plasma. The thermal energy in thecathode 208 and/or theanode 216 can be conducted away or dissipated by liquid or gas cooling such as helium cooling (not shown). - In one embodiment, the voltage pulse has a relatively rapid rise time that is between about 0.1 microsecond and ten seconds. In one embodiment, the
electric field 234 generated by the high-power electrical pulses is a pulsed electric field. In another embodiment, theelectric field 234 is a quasi-static electric field. The term “quasi-static electric field” is defined herein to mean an electric field that has a characteristic time of electric field variation that is much greater than the collision time for electrons with neutral gas particles. Such a time of electric field variation can be on the order of ten seconds. The strength and the position of theelectric field 234 will be discussed in more detail herein. - The amplitude and pulse width of the high-power electrical pulses are limited by the power that the plasma can absorb before the high-power discharge contracts and terminates. In one embodiment, the amplitude and pulse width of the high-power electrical pulse are increased and thus the density of the plasma is increased by increasing the flow rate of the
feed gas 226. - In this mode of operation, the flow rate of the
feed gas 226 is related to the amount of power that is applied to the plasma in order to control the plasma density. The density of plasma can be increased by a rapid volume exchange of an additional volume offeed gas 226 with the volume of plasma that is generated in theregion 222. In this embodiment, a first volume offeed gas 226 is supplied to theregion 222. The first volume offeed gas 226 is then ionized to form a plasma in theregion 222. Next, thegas flow controller 230 supplies an additional volume offeed gas 226 to theregion 222. The additional volume offeed gas 226 displaces the plasma that is generated in theregion 222. Transporting the plasma through theregion 222 into theregion 232 by a rapid volume exchange of thefeed gas 226 increases the power that can be absorbed by the plasma and, thus, generates a higher density plasma in theregion 232. - Controlling the flow of the
feed gases 226 through theregions 222 can affect the homogeneity, distribution profile, and density of the plasma. Additionally, controlling certain parameters of the high-power pulses generated by thepower supply 202, such as power and pulse rate can also affect the homogeneity, distribution profile, and density of the plasma. - In the embodiment that includes the excited atom source (not shown), the density of the plasma is increased by a rapid volume exchange of an additional volume of excited atoms including metastable atoms with the volume of plasma that is generated in the
region 222. In this embodiment, a first volume of excited atoms is supplied to theregion 222. The first volume of excited atoms is then ionized to form a plasma in theregion 222. Next, the excited atom source supplies an additional volume of excited atoms to theregion 222. The additional volume of excited atoms displaces the plasma that is generated in theregion 222. Transporting the plasma through theregion 222 into theregion 232 by a rapid volume exchange of the excited atoms increases the power that can be applied to the plasma and, thus, generates a higher density plasma in theregion 232. - The
plasma generating system 200 can be configured for plasma etching or sputtering. Theplasma generating system 200 can be configured for sputtering magnetic materials. Known magnetron sputtering systems generally are not suitable for sputtering magnetic materials because the magnetic field generated by the magnetron can be absorbed by the magnetic target material. RF diode sputtering is sometimes used to sputter magnetic materials. However, RF diode sputtering generally has poor film thickness uniformity and produces relatively low deposition rates. - The
plasma generating system 200 can be adapted to sputter magnetic materials by including a target assembly (not shown) having a magnetic target material and by driving that target assembly with a RF power supply (not shown). For example, theplasma generating system 200 can include a RF power supply that provides RF power that is on order of about 10 kW. A substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly. The high-density plasma is generated by applying a strong electric field across the initial plasma as described herein. The RF power supply applies a negative voltage bias to the target assembly. Ions in the high-density plasma bombard the target material thereby causing sputtering. - The
plasma generating system 200 can also be adapted to sputter dielectric materials. Dielectric materials can be sputtered by driving a target assembly (not shown) including a dielectric target material with a RF power supply (not shown). For example, theplasma generating system 200 can include a RF power supply that provides RF power that is on order of about 10 kW. A substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly. - In one embodiment, the
plasma generating apparatus 200 of the present invention generates a relatively high electron temperature plasma and a relatively high-density plasma. One application for the high-density plasma of the present invention is ionized physical vapor deposition (IPVD), which is a technique that converts neutral sputtered atoms into positive ions to enhance a sputtering process. - In one embodiment, the
plasma generating system 200 is configured as an ion beam source. Theplasma generating system 200 includes an additional electrode (not shown) that is used to accelerate ions in the plasma. In one embodiment, the external electrode is a grid-type electrode. The ion beam source according to the present invention can generate a very high-density ion flux. For example, the ion beam source can generate ozone flux. Ozone is a highly reactive oxidizing agent that can be used for many applications such as cleaning process chambers, deodorizing air, purifying water, and treating toxic wastes. -
FIG. 3 illustrates a cross-sectional view of aplasma generating apparatus 300 including one embodiment of amagnet assembly 302 according to the invention. Theplasma generating apparatus 300 is similar to theplasma generating apparatus 200. However, theplasma generating apparatus 300 includes themagnet assembly 302 havingmagnets 304. Themagnet assembly 302 is positioned to create amagnetic field 306 proximate to thecathode assembly 204. The configuration of themagnet assembly 302 can be varied depending on the desired shape and strength of themagnetic field 306. Themagnet assembly 302 can have either a balanced or unbalanced configuration. By “balanced configuration” we mean themagnet assembly 302 creates a symmetrical magnetic field with respect to themagnet assembly 302. By “unbalanced configuration” we mean themagnet assembly 302 creates an asymmetrical magnetic field with respect to themagnet assembly 302. In some embodiments, the magnet assembly 30-2 rotates to further improve the uniformly of the plasma. - In one embodiment, the
magnet assembly 302 includes switching electro-magnets (not shown), which generate a pulsed magnetic field proximate to thecathode assembly 204. In some embodiments, additional magnet assemblies (not shown) are placed at various locations around and throughout the process chamber (not shown). - The efficiency of the ionization process can be increased by applying the
magnetic field 306 proximate to thecathode assembly 204. Themagnetic field 306 tends to trap electrons in the plasma and also tends to trap secondary electrons proximate to thecathode assembly 204. The trapped electrons increase the ionization of the atoms in thefeed gas 226 and/or the metastable atoms, thereby increasing the density of the plasma. - In one embodiment, the
magnetic field 306 is generated proximate to thetarget 206 in order to trap electrons in the initial plasma. The plasma is generated by applying an electric field across thefeed gas 226 as described herein. A RF power supply applies a negative voltage bias to thecathode assembly 204. Ions in the plasma bombard the target material thereby causing sputtering. - In one embodiment, a magnetic field (not shown) is generated proximate to the plasma in the
gap 220. The magnetic field intersects the electric field that is generated across thegap 220. The crossed electric and magnetic fields can increase the efficiency of generating the plasma in thegap 220 by trapping electrons and ions in the plasma. - A magnetron sputtering process using a uniformly distributed plasma according to the invention accelerates ions in the plasma towards the surface of the sputtering target in a more uniform manner than with conventional magnetron sputtering. Consequently, the surface of the sputtering target is eroded more evenly and, thus higher target utilization is achieved. Additionally, the target material from the sputtering target is deposited more uniformly on a substrate (not shown) without the necessity of rotating the substrate and/or the magnetron.
- In operation, the
magnetic field 306 is generated proximate to thecathode assembly 204. In one embodiment, thepermanent magnets 304 continuously generate themagnetic field 306. In some embodiments, electro-magnets (not shown) generate themagnetic field 306 by energizing a current source that is coupled to the electro-magnets. After themagnetic field 306 is generated, thefeed gas 226 from thegas source 228 is supplied between thecathode assembly 204 and theanode 216. A volume of thefeed gas 226 fills in theregion 222. In one embodiment (not shown), an excited atom source, such as described in connection withFIG. 6 , supplies a volume of excited atoms including metastable atoms to theregion 222. - Next, the
power supply 202 generates anelectric field 234 across thefeed gas 226 to ignite the plasma in theregion 222. In one embodiment, thefeed gas 226 flows through theregion 222 and continuously displaces the initially generated plasma. The plasma diffuses into theregion 232′ and themagnetic field 306 traps electrons in the plasma. A large fraction of the electrons are concentrated in theregion 308 that corresponds to the weakest area of themagnetic field 306 that is generated by themagnet assembly 302. By trapping the electrons in theregion 308, themagnetic field 306 substantially prevents the plasma from diffusing away from thecathode assembly 204. - The desired strength of the
magnetic field 306 depends upon many factors, such as the volume of the plasma and the desired plasma properties. For example, in one embodiment, the strength of themagnetic field 306 is in the range of about fifty to two thousand gauss. - In one embodiment, the
power supply 202 generates anelectric field 234 across a volume of excited atoms including metastable atoms that are generated by an excited atom source. Theelectric field 234 generates the plasma in theregion 222. In one embodiment, an additional volume of excited atoms including metastable atoms continues to flow through theregion 222 and displaces the plasma. The plasma diffuses into theregion 232′ as described herein. Themagnetic field 306 traps electrons in the plasma. A large fraction of the trapped electrons are concentrated in theregion 308 that corresponds to the weakest area of themagnetic field 306. By trapping electrons in the plasma, themagnetic field 306 prevents the plasma from diffusing away from thecathode assembly 204. - The
magnetic field 306 improves the homogeneity of the high-density plasma. Themagnetic field 306 also increases the ion density of the high-density plasma by trapping electrons in the initial plasma and also by trapping secondary electrons proximate to thecathode assembly 204. The trapped electrons ionize ground state atoms and excited atoms in the initial plasma thereby generating the high-density plasma. In one embodiment (not shown), a magnetic field is generated in theregion 222 to substantially trap electrons in the area where the plasma is initially ignited. - The
magnetic field 306 also promotes increased homogeneity of the plasma by setting up a substantially circular electron E×B drift current 310 proximate to thecathode assembly 204. In one embodiment, the electron E×B drift current 310 generates a magnetic field that interacts with themagnetic field 306 generated by themagnet assembly 302. - When high-power pulses are applied between the
cathode assembly 204 and theanode 216, secondary electrons are generated from thecathode assembly 204 that move in a substantially circular motion proximate to thecathode assembly 204 according to crossed electric and magnetic fields. The substantially circular motion of the electrons generates the electron E×B drift current 310. The magnitude of the electron E×E drift current 310 is proportional to the magnitude of the discharge current in the plasma and, in one embodiment, is approximately in the range of about three to ten times the magnitude of the discharge current. - In one embodiment, the substantially circular electron E×B drift current 310 generates a magnetic field that interacts with the
magnetic field 306 generated by themagnet assembly 302. In one embodiment, the magnetic field generated by the electron E×B drift current 310 has a direction that is substantially opposite to themagnetic field 306 generated by themagnet assembly 302. The magnitude of the magnetic field generated by the electron E×B drift current 310 increases with increased electron E×B drift current 310. The homogeneous diffusion of the plasma in theregion 232′ is caused, at least in part, by the interaction of themagnetic field 306 generated by themagnet assembly 302 and the magnetic field generated by the electron E×B drift current 310. - In one embodiment, the electron E×B drift current 310 defines a substantially circular shape for low current density plasma. However, as the current density of the plasma increases, the substantially circular electron E×B drift current 310 tends to have a more complex shape as the interaction of the
magnetic field 306 generated by themagnet assembly 302, the electric field generated by thepower supply 202, and the magnetic field generated by the electron E×B drift current 310 becomes more acute. For example, in one embodiment, the electron E×B drift current 310 has a substantially cycloidal shape. The exact shape of the electron E×B drift current 310 depends on various factors. - As the magnitude of the electron E×B drift current 310 increases, the magnetic field generated by the electron E×B drift current 310 becomes stronger and eventually overpowers the
magnetic field 306 generated by themagnet assembly 302. The magnetic field lines that are generated by themagnet assembly 302 exhibit substantial distortion that is caused by the relatively strong magnetic field that is generated by the relatively large electron E×B drift current 310. Thus, a large electron E×B drift current 310 generates a stronger magnetic field that strongly interacts with and can begin to dominate themagnetic field 306 that is generated by themagnet assembly 302. - The interaction of the
magnetic field 306 generated by themagnet assembly 302 and the magnetic field generated by the electron E×B drift current 310 generates magnetic field lines that are somewhat more parallel to the surface of thecathode assembly 204 than the magnetic field lines generated by themagnet assembly 302. The somewhat more parallel magnetic field lines results in a more uniformly distributed plasma in thearea 232′. -
FIG. 4 illustrates agraphical representation 400 of the power as a function of time for periodic pulses applied to a plasma generated by theplasma generating system 200 ofFIG. 2 and theplasma generating system 300 ofFIG. 3 . In one illustrative embodiment, thefeed gas 226 flows into theregion 222 between thecathode assembly 208 and theanode 216 at time t0, before thepower supply 202 is activated. - The time required for a sufficient quantity of
feed gas 226 to flow into theregion 222 depends on several factors including the flow rate of thefeed gas 226 and the desired operating pressure. At time t1, thepower supply 202 generates apower pulse 402 that is in the range of about 0.01 kW to 100 kW and applies thepower pulse 402 between thecathode assembly 204 and theanode 216. Thepower pulse 402 causes atoms in thefeed gas 226 to become either excited or ionized, thereby generating the plasma. An additional volume offeed gas 226 flows into theregion 222 between time t1 and time t2 substantially displacing the initially generated plasma. The plasma is displaced into theregion 232 proximate to thesputtering target 206. - In one embodiment, the pulse width of the
power pulse 402 is in the range of about one microsecond to ten seconds. Thepower pulse 402 is terminated at time t3. In one embodiment (not shown), after the delivery of thepower pulse 402, thepower supply 202 supplies a continuously applied nominal power to sustain the plasma, while thepower supply 202 prepares to deliver anotherpower pulse 406. - At time t4, the
power supply 202 delivers anotherpower pulse 406 having a rise time from t4 to t5 and terminating at time t6. In one embodiment, the repetition rate of thepower pulses power pulses power supply 202, the presence of a magnetic field proximate to thecathode assembly 204, and the volume and characteristics of the plasma, for example. The shape and duration of theleading edge 404 and the trailingedge 408 of thepower pulse 402 are chosen to control the rate of ionization of the plasma. -
FIG. 5 is a cross-sectional view of another embodiment of aplasma generating apparatus 500 according to the present invention. Theplasma generating apparatus 500 includes apower supply 502. Thepower supply 502 can be any type of power supply, such as a pulsed power supply, a radio-frequency (RF) power supply, a direct-current (DC) power supply, or an alternating-current (AC) power supply. - The
plasma generating apparatus 500 also includes acathode assembly 504. In one illustrated embodiment, theplasma generating apparatus 500 is configured for magnetron sputtering. In this embodiment, thecathode assembly 504 includes atarget 506 and acathode 508. In one embodiment, thecathode assembly 504 is substantially disk-shaped and includes a centered aperture. - The
cathode assembly 504 can be configured to include ahollow cathode 510 located at the centered aperture of thecathode assembly 504. Ananode 512 is positioned in the center of thehollow cathode 510. Thehollow cathode 510 includes aninner surface 514 that substantially surrounds theanode 512. In one embodiment, theinner surface 514 is a cylindrical wall. In one embodiment, target material covers theinner surface 514 of thehollow cathode 510. Theinner surface 514 forms agap 515 with theanode 512. In some embodiments (not shown), theanode 512 and/or theinner surface 514 can include multiple protuberances, raised areas, depressed areas, surface anomalies, or shapes that control the ionization process. For example, the pressure in thegap 515 can be optimized by including a raised area or protuberance on the surface of theanode 512 and/or on theinner surface 514. - A
first output 516 of thepower supply 502 is coupled to thecathode assembly 504. Asecond output 518 of thepower supply 502 is coupled to theanode 512. In one embodiment, thesecond output 518 of thepower supply 502 and theanode 512 are both coupled to ground. - The
plasma generating apparatus 500 also includes thegas source 228. Thefeed gas 226 is supplied to thehollow cathode 510 through agas line 520. Agas flow controller 230, such as a mass flow controller or gas valve controls the flow of thefeed gas 226 to thehollow cathode 510. - In one embodiment (not shown), the
plasma generating apparatus 500 includes an excited atom source, such as the excited atom source that is described in connection withFIG. 6 . The excited atom source receives ground state atoms from thegas source 228 and excites the ground state atoms to an excited state, thereby generating excited atoms including metastable atoms from the ground state atoms. The excited atom source provides the excited atoms to thehollow cathode 510. - In one embodiment, the
plasma generating apparatus 500 also includes aplasma shaping device 522. The shape and size of theplasma shaping device 522 is chosen so as to optimize the shape and distribution of the plasma that is generated by thehollow cathode 510. In the embodiment shown, theplasma shaping device 522 is formed in the shape of a plate. However, theplasma shaping device 522 can be any desired shape according to the present invention. In one embodiment (not shown), theplasma shaping device 522 is coated with target material so as to reduce contamination in the chamber due to unintended sputtering from theplasma shaping device 522. - In one embodiment, the
plasma generating apparatus 500 also includes amagnet assembly 302 that generates amagnetic field 306 as described herein. Any type of magnet assembly can be used. Themagnetic field 306 can assist in distributing the plasma as described with reference toFIG. 3 . - In operation, a volume of
feed gas 226 from thegas source 228 and/or a volume of excited atoms from an excited atom source (not shown) are supplied to thehollow cathode 510 through thegas flow controller 230. In one embodiment, thefeed gas 226 and/or the excited atoms are supplied through thegap 515 between theanode 512 and theinner surface 514 of thecathode assembly 504. Thepower supply 502 generates a voltage between thecathode assembly 504 and theanode 512 that is large enough to ignite a plasma in thegap 515. - The
gas flow controller 230 supplies an additional volume offeed gas 226 and/or an additional volume of excited atoms to thegap 515 while thehollow cathode 510 generates the plasma. The additional volume offeed gas 226 and/or the additional volume of excited atoms substantially displace the plasma in thehollow cathode 510. This volume exchange forces the plasma towards theplasma shaping apparatus 522. Theplasma shaping apparatus 522 deflects the plasma such that it flows proximate to thetarget 506. The combination of the volume exchange and the plasma deflection creates a uniformly distributed plasma proximate to thetarget 506. In one embodiment, themagnetic field 306 contributes to an even more uniform plasma as discussed with reference toFIG. 3 . - The
plasma generating apparatus 500 can result in the formation of a relatively high-density plasma as compared with conventional plasma generators because a relatively high power can be absorbed in the plasma. By injectingadditional feed gas 226 and/or excited atoms in thehollow cathode 510 during the plasma generation, higher power and longer duration pulses can be applied to the plasma. Theadditional feed gas 226 and excited atoms can absorb the additional power that would otherwise cause the plasma to contract and terminate. -
FIG. 6 illustrates a cross-sectional view of anexcited atom generator 600 that includes anexcited atom source 602 according to the invention. Such anexcited atom generator 600 is described in co-pending U.S. patent application Ser. No. 10/249,202 entitled “Plasma Generation Using Multi-Step Ionization,” filed on Mar. 21, 2003, which is assigned to the present assignee. The entire disclosure of U.S. patent application Ser. No. 10/249,202 is incorporated herein by reference. - The
excited atom generator 600 includes thegas source 228 and thegas flow controller 230. There are many possible configurations for theexcited atom generator 600. In one embodiment, agas source 228 suppliesground state atoms 603 of a feed gas to theexcited atom source 602. - The
excited atom generator 600 also includes apower supply 604. Thepower supply 604 can be a direct-current (DC), an alternating-current (AC), a radio-frequency (RF), or a pulsed power supply, for example. Afirst output 624 of thepower supply 604 is coupled to afirst input 626 of theexcited atom source 602 with afirst transmission line 628. Asecond output 630 of thepower supply 604 is coupled to asecond input 632 of theexcited atom source 602 with asecond transmission line 634. Thefirst input 626 of theexcited atom source 602 is coupled to afirst electrode 636 in theexcited atom source 602. Thesecond input 632 of theexcited atom source 602 is coupled to asecond electrode 638 in theexcited atom source 602. - An
output 606 of thegas source 228 is coupled to one end of agas line 605. The other end of thegas line 605 is coupled to aninput 608 of thegas controller 230. Anoutput 612 of thegas controller 230 is coupled to one end ofsecond gas line 610. The other end of thesecond gas line 610 is coupled to aninput 614 of theexcited atom source 602. A volume of excited atoms including metastable atoms exits theexcited atom source 602 through theoutput 616. - In operation,
ground state atoms 603 from thegas source 228 flow to theexcited atom source 602 though thegas flow controller 230. Thegas flow controller 230 controls the flow rate of theground state atoms 603. Theground state atoms 603 flow between thefirst electrode 636 and thesecond electrode 638. The first 636 and thesecond electrodes 638 are charged by thepower supply 604, such that a discharge is created in adischarge region 640 between the first 636 and thesecond electrodes 638. At least a portion of theground state atoms 603 that are injected through thedischarge region 640 are energized to an excited state, such as a metastable state. - In one embodiment, a large portion of the exited
atoms 618 are metastable atoms. The term “metastable atoms” is defined herein to mean excited atoms having energy levels from which dipole radiation is theoretically forbidden. Metastable atoms have relatively long lifetimes compared with other excited atoms. Metastable atoms are created because, in theory, the selection rules forbid relaxation of these excited atoms to the ground state and the emission of dipole radiation. However, the selection rules were determined using certain approximations. Consequently, in practice, there is a finite probability that the metastable atoms relax to the ground state and emit dipole radiation. The actual lifetime of metastable atoms is on order of milliseconds to minutes. - All noble gas atoms have metastable states. For example, argon has two metastable states, see, for example, Fabrikant, I. I., Shpenik, O. B., Snegursky, A. V., and Zavilopulo, A. N., Electron Impact Formation of Metastable Atoms, North-Holland, Amsterdam. Argon metastable atoms can be generated by applying a sufficient voltage across argon feed gas containing ground state argon atoms. When an ionizing electron (e−) collides with a ground state argon (Ar) atom, a metastable argon atom and an electron are generated.
- Argon atoms require a minimum of 11.56 eV of energy to reach one of its two metastable states. Whereas, 15.76 eV of energy is required to eject the electron and ionize the atom. Therefore, the energy required to excite ground state argon atoms to a metastable state is lower than the 15.76 eV energy that is required to ionize ground state argon atoms. Thus, a large number of argon atoms can be energized to a metastable state using less energy then would be required to directly ionize the argon atoms.
- Depending on the geometry and the operating parameters of the
excited atom source 602, a relatively small volume ofions 620 andelectrons 622, as well as someground state atoms 603 can be present in the volume ofexcited atoms 618 including the metastable atoms. For example, theoutput 616 of theexcited atom source 602 can be coupled to one or more of thegas lines 224 of theplasma generating apparatus 200 ofFIG. 2 to supplyexcited atoms 618 to theregion 222. Theoutput 616 of theexcited atom source 602 can also be coupled to thegas line 520 of theplasma generating apparatus 500 ofFIG. 5 to supplyexcited atoms 618 to thehollow cathode 510. In one embodiment, the volume ofions 620 and the volume ofelectrons 622 are removed from the volume ofexcited atoms 618 before theexcited atoms 618 are injected into the gas lines 224 (FIG. 2 ) or the gas line 520 (FIG. 5 ), as described herein. - The
excited atoms 618 facilitate a multi-step or stepwise ionization process to generate the plasma. The term “multi-step ionization process” is defined herein to mean an ionization process whereby ions are ionized in at least two distinct steps. For example, in a first step, atoms are excited from a ground state to an excited state; and in a second step, the atoms in the excited state are further excited and ionized. The term “multi-step ionization process” also includes ionization processes with three or more steps. - Some of the
ground state atoms 603 are energized to an energy that ionizes the atoms, thereby releasingions 620 andelectrons 622 into the stream of exitedatoms 618. Theexcited atoms 218, thefree ions 620 andelectrons 622 then pass through theoutput 616 of theexcited atom source 602. In addition,ground state atoms 603 can also be present in the stream ofexcited atoms 618. Theground state atoms 603 can originate from thegas source 228 or can be excited atoms that have decayed back to a ground state. - One advantage of using
excited atoms 618 in the plasma process is that they require less energy to ionize thanground state atoms 603. For example, ametastable argon atom 618 requires only about 4 eV of energy to ionize as compared with about 15.76 eV of energy required to ionize an argonground state atom 603. The difference between exciting aground state atom 603 to an excited state, such as a metastable state, and ionizing aground state atom 603 is discussed below. - Argon atoms can be ionized by a two-step ionization process. In the first step, ionizing electrons e− are generated by applying a sufficient voltage between two electrodes. When an ionizing electron e− collides with a ground state argon (Ar) atom, a metastable argon atom and an electron are generated. Metastable atoms can be present in considerable densities in weakly ionized discharges. In the second step, an ionizing electron e− collides with the metastable argon atom and the metastable argon atom is ionized and two electrons are generated, as shown below.
Ar+e −→Ar*+e−
Ar* +e −→Ar++2e − -
- where Ar represents an argon ground state atom, and e− represents an ionizing electron that is generated when sufficient voltage is applied between the
first electrode 636 and thesecond electrode 638, and Ar* represents a metastable argon atom. The second step can occur in the plasma chamber. The collision between the metastable argon atom and the ionizing electron results in an argon ion (Ar+) and two electrons.
- where Ar represents an argon ground state atom, and e− represents an ionizing electron that is generated when sufficient voltage is applied between the
- Plasma generation using multi-step ionization according to the present invention is described in connection with the generation of metastable atoms. However, the present invention is not limited to multi-step ionization using metastable atoms. Plasma generation using multi-step ionization according to the present invention can be achieved by generating metastable molecules.
- Controlling the pressure in the
excited atom source 602 can increase the volume of exitedatoms 618 that are generated by theexcited atom source 602. In one embodiment, a pressure at theinput 614 of theexcited atom source 602 is lower than a pressure at theoutput 616 of theexcited atom source 602. The pressure differential increases the efficiency with which theexcited atoms 618 are generated by theexcited atom source 602. For example, a diameter of theinput 614 can be chosen to be greater than a diameter of theoutput 616. This difference in diameters can be used to optimize the pressure in thedischarge region 640 and therefore increase the efficiency with which theexcited atoms 618 are generated. - Once a sufficient volume of
excited atoms 618 is present in the region 222 (FIG. 2 ), thepower supply 202 generates theelectric field 234 proximate to the volume ofexcited atoms 618 between thecathode assembly 204 and theanode 216. Theelectric field 234 raises the energy of the volume ofexcited atoms 618 causing collisions between neutral atoms, electrons, andexcited atoms 618. These collisions generate the plasma in theregion 222. The plasma can include ions, metastable atoms and additionalexcited atoms 618. The efficiency of the multi-step ionization process increases as the density ofexcited atoms 618 in theregion 222 increases. The multi-step ionization process described herein substantially increases the rate at which a plasma is formed and, therefore, generates a relatively dense plasma. The rate is increased because only a relatively small amount of energy is required to ionize theexcited atoms 618. - Furthermore, as the density of the
excited atoms 618 in the plasma increases, the efficiency of the ionization process rapidly increases. The increased efficiency results in an avalanche-like process that substantially increases the density of the plasma. In addition, the ions in the plasma strike the cathode assembly 204 (FIG. 2 ) causing the secondary electron emission from thecathode assembly 204. The secondary electrons interact withground state atoms 603 and with theexcited atoms 618 in the plasma. This interaction further increases the density of ions in the plasma as additional volumes ofexcited atoms 618 enter theregion 222. Thus, for the same input energy, the density of the plasma that is generated by the multi-step ionization process according to the present invention is significantly greater than a plasma that is generated by direct ionization ofground state atoms 603. -
FIG. 7 is aflowchart 700 of an illustrative process of generating a uniformly-distributed plasma according to the present invention. In some embodiments, a magnetic field 306 (FIG. 3 ) is generated proximate to thetarget 206 as described herein. The feed gas 226 (FIG. 2 ) from thefeed gas source 228 flows into the region 222 (step 702). The volume and the flow rate of thefeed gas 226 are controlled by thefeed gas controller 230. In some embodiments, excited atoms 618 (FIG. 6 ) from theexcited atom source 602 flow into the region 222 (FIG. 2 ). - After a suitable volume of the
feed gas 226 and/orexcited atoms 618 is supplied to theregion 222, thepower supply 202 generates a voltage across thefeed gas 226 and/or theexcited atoms 618 in the region 222 (step 704). The voltage generates an electric field that is large enough to ignite thefeed gas 226 and/or theexcited atoms 618 to generate the plasma.Additional feed gas 226 and/orexcited atoms 618 flows into theregion 222 while the plasma is being generated, thereby forcing the plasma to diffuse into theregion 232 proximate to the target 206 (step 706). This process continues until a suitable volume of plasma is located in theregion 232 proximate to the target 206 (step 708). The plasma that is located in theregion 232 proximate to thetarget 206 is substantially uniformly-distributed. - While the invention has been particularly shown and described with reference to specific preferred embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined herein.
Claims (21)
1-53. (canceled)
54. A plasma generator comprising:
a. an anode;
b. a cathode assembly that is positioned adjacent to the anode;
c. an excited atom source that generates at least one of excited atoms and excited molecules from a feed gas, the excited atom source supplying the at least one of excited atoms and excited molecules to the cathode assembly; and
d. a power supply that generates a pulsed electric field across the cathode assembly and the anode that ionizes the at least one of the excited atoms and excited molecules that are supplied to the cathode assembly by the excited atom source, at least one of a shape and a duration of at least one of a leading edge and a trailing edge of the pulsed electric field controlling a rate of ionization of the plasma.
55. The plasma generator of claim 54 wherein the cathode assembly comprises a target.
56. The plasma generator of claim 54 wherein the power supply generates a constant power.
57. The plasma generator of claim 54 wherein the power supply generates a constant voltage.
58. The plasma generator of claim 54 further comprising a magnet assembly that generates a magnet field that substantially traps electrons in the plasma.
59. The plasma generator of claim 54 wherein the cathode assembly comprises a hollow cathode comprising an inner surface that substantially surrounds the anode.
60. The plasma generator of claim 59 wherein the inner surface comprises a cylindrical wall.
61. The plasma generator of claim 54 wherein the plasma is substantially uniformly-distributed proximate to a surface of the cathode assembly.
62. The plasma generator of claim 54 wherein a peak plasma density of the plasma is in the range of about 107 cm−3 to 1016 cm−1.
63. A plasma generator comprising:
a. an anode;
b. a cathode assembly that is positioned adjacent to the anode;
c. a gas source that supplies feed gas to the cathode assembly;
d. an excited atom source that generates at least one of excited atoms and excited molecules from feed gas supplied by the gas source, the excited atom source supplying the at least one of excited atoms and excited molecules to the cathode assembly; and
e. a power supply that generates an electric field across the cathode assembly and the anode, the electric field ionizing the at least one of excited atoms and excited molecules, thereby creating a plasma.
64. The plasma generator of claim 63 wherein a flow rate of the feed gas that is supplied to the cathode assembly from the gas source is chosen to increase a density of the plasma proximate to a surface of the cathode assembly.
65. The plasma generator of claim 63 wherein a flow rate of the feed gas that is supplied to the cathode assembly is chosen to increase uniformity of the plasma proximate to the surface of the cathode assembly.
66. A method for generating a plasma, the method comprising:
a. generating at least one of excited atoms and excited molecules from a feed gas;
b. supplying the at least one of the excited atoms and excited molecules to a cathode assembly; and
c. applying a pulsed electric field across the cathode assembly and the anode, the pulsed electric field ionizing the at least one of the exited atoms and excited molecules, thereby creating a plasma; and
d. selecting at least one of a shape and a duration of at least one of a leading edge and a trailing edge of the pulsed electric field to control a rate of ionization of the plasma.
67. The method of claim 66 wherein the applying the pulsed electric field comprises applying the pulsed electric field at a constant power.
68. The method of claim 66 wherein the applying the pulsed electric field comprises applying the pulsed electric field at a constant voltage.
69. The method of claim 66 further comprising generating a magnetic field proximate to the plasma, the magnetic field trapping electrons in the plasma, thereby increasing the density of the plasma.
70. The method of claim 66 further comprising adjusting a flow rate of the feed gas to increase a density of the plasma.
71. The method of claim 66 further comprising adjusting a flow rate of the feed gas to increase plasma uniformity of the plasma proximate to a surface of the cathode assembly.
72. The method of claim 66 wherein a repetition rate of the pulsed electric field is in the range of about 0.1 Hz to 10 kHz.
73. The method of claim 66 wherein a magnitude of the pulsed electric field is chosen to reduce a probability of establishing an electrical breakdown condition leading to an undesirable electrical discharge.
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Also Published As
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WO2004102610A3 (en) | 2005-11-17 |
US6903511B2 (en) | 2005-06-07 |
WO2004102610A2 (en) | 2004-11-25 |
US20040222745A1 (en) | 2004-11-11 |
EP1625603A2 (en) | 2006-02-15 |
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