US20050208753A1 - Dual-damascene interconnects without an etch stop layer by alternating ILDs - Google Patents
Dual-damascene interconnects without an etch stop layer by alternating ILDs Download PDFInfo
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- US20050208753A1 US20050208753A1 US11/131,740 US13174005A US2005208753A1 US 20050208753 A1 US20050208753 A1 US 20050208753A1 US 13174005 A US13174005 A US 13174005A US 2005208753 A1 US2005208753 A1 US 2005208753A1
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- ild
- ilds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the invention relates to field of fabrication of interconnect layers in a semiconductor device.
- each interconnect layer is fabricated in, or on, an interlayer dielectric (ILD). Vias are etched in each ILD to make contact with conductors in an underlying layer. It is generally accepted that the dielectric material in each ELD should have a low k to obtain low capacitance between the conductors. Often the low k dielectrics have low densities and etch quite rapidly. Particularly for unlanded contacts, over etching can occur and extend into an underlying layer causing a defect. For this reason, etchant stops are formed between each layer. Unfortunately, these etchant stop layers typically have higher k values, and thereby increase the capacitance between conductors.
- ILD interlayer dielectric
- a first ILD 10 includes a copper conductor and via fabricated with a dual damascene process.
- the layer 13 acts as an etchant stop to prevent etching into the underlying ILD 10 .
- the region shown by the dotted line 14 may be etched away causing a defect. Consequently, the layer 13 is needed even though it increases the capacitance between conductors.
- the layer 13 acts both as an etchant stop and as a diffusion barrier.
- Layer 13 's role as an etchant stop is the major contributor to the capacitance since a layer thickness of 800-1600 ⁇ is often used for the etchant stop function compared to only 200 ⁇ needed to provide the barrier function.
- a shunt layer with cobalt or nickel or an alloy thereof. This involves the selection deposition of a shunting material over the copper lines to present electromigration into the overlying ILD. This is discussed in co-pending application Ser. No. 09/753,256; Interconnect Structures and a Method of Electroless Introduction of Interconnect Structures, assigned to the assignee of the present application, filed Dec. 28, 2000.
- FIG. 1 is a cross-sectional elevation view showing two levels of an interlayer dielectric (ILD) as used in the prior art.
- ILD interlayer dielectric
- FIG. 2 is a cross-sectional elevation view showing two ILDs as fabricated in accordance with an embodiment of the present invention.
- FIG. 3 is a cross-sectional elevation view showing several ILDs fabricated with an embodiment of the present invention.
- the present invention uses at least two different ILD materials which are alternated from one interconnect level to the next.
- the materials are selected such that each of the materials is etchable more rapidly in the presence of the other material.
- the first material is an organic low k dielectric such as a polymer based dielectric and the second material is an inorganic material such a carbon-doped oxide.
- PFCB perfluorocyclobutane
- C. B. Case C. J. Case, A. Komblit, M. E. Mills, D. Castillo, R. Liu, Conference Proceedings, ULSI XII.COPYRGT. 1997, Materials Research Society, beginning at page 449.
- These polymers are available from companies such as Dupont, Allied Signal, Dow Chemical, Dow Corning, and others.
- the second category of materials that may be used in the present invention are silica-based such as the nanoporous silica aerogel and xerogel. These dielectrics are discussed in “Nanoporous Silica for Dielectric Constant Less than 2”, by Ramos, Roderick, Maskara and Smith, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society, beginning at page 455 and “Porous Xerogel Films as Ultra-Low Permittivity Dielectrics for ULSI Interconnect Applications”, by Jin, List, Lee, Lee, Luttmer and Havermann, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society, beginning at page 463.
- ILDs 0 - 5 Assume for sake of discussion that a process has six levels of metalization, identified as ILDs 0 - 5 . While the present invention in some cases may be used in all of the six levels of ILD, in one embodiment it is used for levels 1 - 4 .
- the 0 level ILD generally contacts the substrate and may require different processing such as discussed in U.S. Pat. No. 6,124,191.
- the uppermost ILD level typically receives special processing for packaging purposes such as the inclusion of bumps, and for this reason, an undoped silicon dioxide layer may be used.
- ILD levels 30 , 31 , 32 , and 33 are illustrated. These levels may be levels 1 - 4 in a six level metalization process. Levels one and three are formed from a first ILD material which may be, for instance, a low k carbon-doped oxide. The alternate layers 31 and 33 , as indicated, are fabricated from a second ILD material such as a polymer based dielectric.
- vias and conductors are formed in each of the ILDs 30 - 33 .
- These vias and conductors may be formed in an ordinary way using, for instance, a dual-damascene process.
- both the vias and conductors may, for instance, be fabricated from a copper or copper alloy which is enclosed within a conductive barrier material to prevent the copper from diffusing into adjacent dielectric materials.
- a barrier layer of silicon nitride or silicon carbide 34 is used between the ILDs. This dielectric presents the copper from diffusing into the ILDs.
- Layer 34 may be relatively thin (e.g. 200 ⁇ ) since it is not used as an etchant stop. Thus, it does not add to the interconnector and interconductor capacitance to the extent that the thicker etchant stop would.
- First ILD 19 is fabricated from a first material such as the polymer based dielectric and includes vias and conductors.
- a shunting layer 25 is added over the copper conductors to present electromigration for this embodiment.
- ILD 20 is formed from a second dielectric material such as the carbon-doped oxide. Vias and conductors are fabricated in ILD 20 along with the shunting layer 25 . All of this is done with known processing steps.
- ILD 21 is formed directly on ILD 20 without an intermediate etchant stop such as layer 13 of FIG. 1 .
- ILD 21 is fabricated from a first material such as the polymer based dielectric.
- Patterning is used for each layer to define the via and conductor openings such as with a sacrificial light absorbing material (SLAM) or a dual hard masked process to form the opening 24 and like openings or a combination of these steps.
- SLAM sacrificial light absorbing material
- the opening 24 is used to form a contact and conductor.
- a shunting material is used to provide a barrier whereas in FIG. 3 , a dielectric is used for the barrier. Both may be used at the same level in the ILDs or they may be alternated. For instance, often the shunting material has been deposited, the barrier dielectric may be formed. An opening is etched in the dielectric for a via when the via/conductor openings are etched for the overlying ILD.
- the first material etches with a first etchant more rapidly than the underlying second material of the ILD 20 .
- the differential etching rate is 20 to 1, or greater.
- the etchant used to etch the first material etches this material at a rate at least 20 times faster than the first material.
- each layer may have a different material a long as a layer can be etched at a higher rate than the underlying layer. However, it maybe more cost effective for all the odd numbered layers to be made of a first material and all of the even numbered layers to be made of a second material.
- the inorganic materials discussed above may be etched with fluorocarbon such as C 4 F 8 , C 5 F 8 , C 2 F 6 , C 4 F 6 , CF 4 or CH 2 F 2 .
- the fluorocarbon is typically used in a mixture with oxygen and argon. A selective of 20 to 1 is achievable between the inorganic or organic ILDs discussed above.
- the organic polymers discussed above may be etched with hydrogen or oxygen which in effect burns the polymer in a mixture with nitrogen.
- a selective of 30 to 1 is achievable between the organic and inorganic dielectrics.
Abstract
A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.
Description
- The invention relates to field of fabrication of interconnect layers in a semiconductor device.
- In current integrated circuits, several layers of interconnect structures fabricated above a substrate containing active devices are often used. Each interconnect layer is fabricated in, or on, an interlayer dielectric (ILD). Vias are etched in each ILD to make contact with conductors in an underlying layer. It is generally accepted that the dielectric material in each ELD should have a low k to obtain low capacitance between the conductors. Often the low k dielectrics have low densities and etch quite rapidly. Particularly for unlanded contacts, over etching can occur and extend into an underlying layer causing a defect. For this reason, etchant stops are formed between each layer. Unfortunately, these etchant stop layers typically have higher k values, and thereby increase the capacitance between conductors.
- The problem is shown in
FIG. 1 where a first ILD 10 includes a copper conductor and via fabricated with a dual damascene process. When anopening 12 is etched into thenext WLD 11, thelayer 13 acts as an etchant stop to prevent etching into theunderlying ILD 10. But for thelayer 13, the region shown by thedotted line 14 may be etched away causing a defect. Consequently, thelayer 13 is needed even though it increases the capacitance between conductors. - Typically the
layer 13 acts both as an etchant stop and as a diffusion barrier.Layer 13's role as an etchant stop is the major contributor to the capacitance since a layer thickness of 800-1600 Å is often used for the etchant stop function compared to only 200 Å needed to provide the barrier function. - Another technology that may be used instead of using the
layer 13 ofFIG. 1 as a barrier layer is to use a shunt layer with cobalt or nickel or an alloy thereof. This involves the selection deposition of a shunting material over the copper lines to present electromigration into the overlying ILD. This is discussed in co-pending application Ser. No. 09/753,256; Interconnect Structures and a Method of Electroless Introduction of Interconnect Structures, assigned to the assignee of the present application, filed Dec. 28, 2000. -
FIG. 1 is a cross-sectional elevation view showing two levels of an interlayer dielectric (ILD) as used in the prior art. -
FIG. 2 is a cross-sectional elevation view showing two ILDs as fabricated in accordance with an embodiment of the present invention. -
FIG. 3 is a cross-sectional elevation view showing several ILDs fabricated with an embodiment of the present invention. - An integrated circuit interconnect structure and process for fabricating the structure is described. In the following description, numerous specific details are set forth such as specific-interlayer dielectrics (ILD) materials in order to provide a thorough understanding of the present invention. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details. In other instances, well known processing steps, such as etching and deposition steps, are not described in detail in order not to unnecessarily obscure the disclosure.
- The present invention uses at least two different ILD materials which are alternated from one interconnect level to the next. The materials are selected such that each of the materials is etchable more rapidly in the presence of the other material. In one embodiment, the first material is an organic low k dielectric such as a polymer based dielectric and the second material is an inorganic material such a carbon-doped oxide.
- The first category of materials, the organic polymers, are typically spun-on. A discussion of perfluorocyclobutane (PFCB) organic polymers is found in “Integration of Perfluorocyclobutane (PFCB)”, by C. B. Case, C. J. Case, A. Komblit, M. E. Mills, D. Castillo, R. Liu, Conference Proceedings, ULSI XII.COPYRGT. 1997, Materials Research Society, beginning at page 449. These polymers are available from companies such as Dupont, Allied Signal, Dow Chemical, Dow Corning, and others.
- The second category of materials that may be used in the present invention are silica-based such as the nanoporous silica aerogel and xerogel. These dielectrics are discussed in “Nanoporous Silica for Dielectric Constant Less than 2”, by Ramos, Roderick, Maskara and Smith, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society, beginning at page 455 and “Porous Xerogel Films as Ultra-Low Permittivity Dielectrics for ULSI Interconnect Applications”, by Jin, List, Lee, Lee, Luttmer and Havermann, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society, beginning at page 463.
- Assume for sake of discussion that a process has six levels of metalization, identified as ILDs 0-5. While the present invention in some cases may be used in all of the six levels of ILD, in one embodiment it is used for levels 1-4. The 0 level ILD generally contacts the substrate and may require different processing such as discussed in U.S. Pat. No. 6,124,191. The uppermost ILD level typically receives special processing for packaging purposes such as the inclusion of bumps, and for this reason, an undoped silicon dioxide layer may be used.
- Referring to
FIG. 3 , the structure for fourconsecutive ILD levels alternate layers - As shown is
FIG. 3 , vias and conductors are formed in each of the ILDs 30-33. These vias and conductors may be formed in an ordinary way using, for instance, a dual-damascene process. In this case, both the vias and conductors may, for instance, be fabricated from a copper or copper alloy which is enclosed within a conductive barrier material to prevent the copper from diffusing into adjacent dielectric materials. - In
FIG. 3 , a barrier layer of silicon nitride orsilicon carbide 34 is used between the ILDs. This dielectric presents the copper from diffusing into the ILDs.Layer 34, as mentioned above, may be relatively thin (e.g. 200 Å) since it is not used as an etchant stop. Thus, it does not add to the interconnector and interconductor capacitance to the extent that the thicker etchant stop would. - In
FIG. 2 , some of the processing used to fabricate a structure for one embodiment is illustrated. First ILD 19 is fabricated from a first material such as the polymer based dielectric and includes vias and conductors. Ashunting layer 25 is added over the copper conductors to present electromigration for this embodiment. Then ILD 20 is formed from a second dielectric material such as the carbon-doped oxide. Vias and conductors are fabricated in ILD 20 along with theshunting layer 25. All of this is done with known processing steps. - Now an ILD 21 is formed directly on ILD 20 without an intermediate etchant stop such as
layer 13 ofFIG. 1 . ILD 21 is fabricated from a first material such as the polymer based dielectric. - Patterning is used for each layer to define the via and conductor openings such as with a sacrificial light absorbing material (SLAM) or a dual hard masked process to form the
opening 24 and like openings or a combination of these steps. Theopening 24, is used to form a contact and conductor. - In
FIG. 2 , a shunting material is used to provide a barrier whereas inFIG. 3 , a dielectric is used for the barrier. Both may be used at the same level in the ILDs or they may be alternated. For instance, often the shunting material has been deposited, the barrier dielectric may be formed. An opening is etched in the dielectric for a via when the via/conductor openings are etched for the overlying ILD. - Importantly, with the disclosed embodiment, the first material etches with a first etchant more rapidly than the underlying second material of the
ILD 20. Preferably the differential etching rate is 20 to 1, or greater. Thus, when theopening 24 is etched, and the etchant reaches the second material, very little etching occurs in the ILD second material. For this reason, the defect shown by the dottedline 14 ofFIG. 1 does not occur even though there is no etchant stop. - Similarly, when the openings were etched in the
ILD 20, an etchant is used that etches the second material more rapidly than the first material. Thus, when an opening was etched in theILD 20, the etchant did not etch into the underlying first material. Again it is preferred that the etchant used to etch the first material etches this material at a rate at least 20 times faster than the first material. - While in one embodiment all the even number ILD levels are made from a first material and all the odd number ILD levels are made from a second material, this is not necessary. Each layer may have a different material a long as a layer can be etched at a higher rate than the underlying layer. However, it maybe more cost effective for all the odd numbered layers to be made of a first material and all of the even numbered layers to be made of a second material.
- The inorganic materials discussed above may be etched with fluorocarbon such as C4F8, C5F8, C2F6, C4F6, CF4 or CH2F2. The fluorocarbon is typically used in a mixture with oxygen and argon. A selective of 20 to 1 is achievable between the inorganic or organic ILDs discussed above.
- The organic polymers discussed above may be etched with hydrogen or oxygen which in effect burns the polymer in a mixture with nitrogen. A selective of 30 to 1 is achievable between the organic and inorganic dielectrics.
- Thus, ILDs with reduced capacitance has been disclosed.
Claims (13)
1-24. (canceled)
25. A method for fabricating an integrated circuit comprising:
depositing a first ILD entirely of a first material;
forming vias and conductors in the first ILD;
forming a second ILD directly on the first ILD entirely of a second material;
etching openings in the second ILD with a first etchant that etches the second material faster than the first material;
forming a third ILD entirely of the first material directly on the second ILD; and
etching openings in the third ILD with a second etchant that etches the first material faster than the second material.
26. The method defined by claim 25 wherein the second material comprises a carbon-based oxide.
27. The method defined by claim 26 wherein the first material comprises a polymer based dielectric.
28. The method defined by claim 27 wherein the second material is etched with a fluorocarbon.
29. The method defined by claim 28 wherein the first material is etched with oxygen or hydrogen.
30. The method defined by claim 25 including the steps of forming vias and conductors in the second and third ILDs.
31. A method of fabricating an integrated circuit comprising:
forming first alternate interlayer dielectrics (ILDs) entirely of a first material; forming second ILDs intermediate between the first ILDs entirely of a second material where the second are material is etchable at a faster rate than the first material by a first etchant and where the second material is etchable at a faster rate than the first material by a second etchant.
32. The method defined by claim 31 wherein the first material comprises an organic based material, and wherein the second material comprises a non-organic based material.
33. The method defined by claim 32 including forming vias and conductors in each of the ILDs.
34. The method defined by claim 33 wherein the vias and conductors are formed with a dual-damascene process.
35. (canceled)
36. The method defined by claim 31 wherein conductors in the first and second layer are covered by a shunting material.
Priority Applications (1)
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US11/131,740 US20050208753A1 (en) | 2001-09-28 | 2005-05-17 | Dual-damascene interconnects without an etch stop layer by alternating ILDs |
Applications Claiming Priority (2)
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US09/968,459 US6992391B2 (en) | 2001-09-28 | 2001-09-28 | Dual-damascene interconnects without an etch stop layer by alternating ILDs |
US11/131,740 US20050208753A1 (en) | 2001-09-28 | 2005-05-17 | Dual-damascene interconnects without an etch stop layer by alternating ILDs |
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US09/968,459 Division US6992391B2 (en) | 2001-09-28 | 2001-09-28 | Dual-damascene interconnects without an etch stop layer by alternating ILDs |
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US11/131,740 Abandoned US20050208753A1 (en) | 2001-09-28 | 2005-05-17 | Dual-damascene interconnects without an etch stop layer by alternating ILDs |
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US09/968,459 Expired - Fee Related US6992391B2 (en) | 2001-09-28 | 2001-09-28 | Dual-damascene interconnects without an etch stop layer by alternating ILDs |
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MY (1) | MY130377A (en) |
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WO (1) | WO2003028092A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080116481A1 (en) * | 2006-11-21 | 2008-05-22 | Sharma Ajay K | Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal |
US20080157365A1 (en) * | 2006-12-27 | 2008-07-03 | Andrew Ott | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor |
US20150162277A1 (en) * | 2013-12-05 | 2015-06-11 | International Business Machines Corporation | Advanced interconnect with air gap |
US9214429B2 (en) | 2013-12-05 | 2015-12-15 | Stmicroelectronics, Inc. | Trench interconnect having reduced fringe capacitance |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI300971B (en) * | 2002-04-12 | 2008-09-11 | Hitachi Ltd | Semiconductor device |
US6902954B2 (en) * | 2003-03-31 | 2005-06-07 | Intel Corporation | Temperature sustaining flip chip assembly process |
US7157380B2 (en) * | 2003-12-24 | 2007-01-02 | Intel Corporation | Damascene process for fabricating interconnect layers in an integrated circuit |
US20060157776A1 (en) * | 2005-01-20 | 2006-07-20 | Cheng-Hung Chang | System and method for contact module processing |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
CN100552916C (en) * | 2005-12-07 | 2009-10-21 | 佳能株式会社 | Use dual-damascene technics to make semiconductor device and the method that contains the goods of intercommunicating pore |
TWI320588B (en) * | 2006-12-27 | 2010-02-11 | Siliconware Precision Industries Co Ltd | Semiconductor device having conductive bumps and fabrication methodthereof |
US8154121B2 (en) * | 2008-02-26 | 2012-04-10 | Intel Corporation | Polymer interlayer dielectric and passivation materials for a microelectronic device |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127258A (en) * | 1998-06-25 | 2000-10-03 | Motorola Inc. | Method for forming a semiconductor device |
US6165898A (en) * | 1998-10-23 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
US6287961B1 (en) * | 1999-01-04 | 2001-09-11 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
US6287955B1 (en) * | 1999-06-09 | 2001-09-11 | Alliedsignal Inc. | Integrated circuits with multiple low dielectric-constant inter-metal dielectrics |
US20020024150A1 (en) * | 2000-08-31 | 2002-02-28 | Farrar Paul A. | Etch stop in damascene interconnect structure and method of making |
US20020173143A1 (en) * | 2001-05-17 | 2002-11-21 | Samsung Electronics Co., Ltd. | Method for forming metal wiring layer of semiconductor device |
US20030001240A1 (en) * | 2001-07-02 | 2003-01-02 | International Business Machiness Corporation | Semiconductor devices containing a discontinuous cap layer and methods for forming same |
US20040056366A1 (en) * | 2002-09-25 | 2004-03-25 | Maiz Jose A. | A method of forming surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement |
US20050032355A1 (en) * | 2003-08-04 | 2005-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual damascene method for ultra low K dielectrics |
US6911397B2 (en) * | 2002-04-17 | 2005-06-28 | Samsung Electronics, Co., Ltd. | Method of forming dual damascene interconnection using low-k dielectric |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6197696B1 (en) | 1998-03-26 | 2001-03-06 | Matsushita Electric Industrial Co., Ltd. | Method for forming interconnection structure |
TW437040B (en) | 1998-08-12 | 2001-05-28 | Applied Materials Inc | Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics |
US6576550B1 (en) * | 2000-06-30 | 2003-06-10 | Infineon, Ag | ‘Via first’ dual damascene process for copper metallization |
-
2001
- 2001-09-28 US US09/968,459 patent/US6992391B2/en not_active Expired - Fee Related
-
2002
- 2002-09-25 MY MYPI20023555A patent/MY130377A/en unknown
- 2002-09-27 EP EP02768930A patent/EP1430525B1/en not_active Expired - Lifetime
- 2002-09-27 WO PCT/US2002/031159 patent/WO2003028092A2/en not_active Application Discontinuation
- 2002-09-27 TW TW091122328A patent/TW559958B/en not_active IP Right Cessation
- 2002-09-27 CN CNB028122976A patent/CN1263114C/en not_active Expired - Fee Related
- 2002-09-27 AT AT02768930T patent/ATE312411T1/en not_active IP Right Cessation
- 2002-09-27 DE DE60207879T patent/DE60207879T2/en not_active Expired - Lifetime
-
2005
- 2005-05-17 US US11/131,740 patent/US20050208753A1/en not_active Abandoned
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127258A (en) * | 1998-06-25 | 2000-10-03 | Motorola Inc. | Method for forming a semiconductor device |
US6165898A (en) * | 1998-10-23 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
US6287961B1 (en) * | 1999-01-04 | 2001-09-11 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
US6287955B1 (en) * | 1999-06-09 | 2001-09-11 | Alliedsignal Inc. | Integrated circuits with multiple low dielectric-constant inter-metal dielectrics |
US20020024150A1 (en) * | 2000-08-31 | 2002-02-28 | Farrar Paul A. | Etch stop in damascene interconnect structure and method of making |
US6395632B1 (en) * | 2000-08-31 | 2002-05-28 | Micron Technology, Inc. | Etch stop in damascene interconnect structure and method of making |
US20020173143A1 (en) * | 2001-05-17 | 2002-11-21 | Samsung Electronics Co., Ltd. | Method for forming metal wiring layer of semiconductor device |
US20030001240A1 (en) * | 2001-07-02 | 2003-01-02 | International Business Machiness Corporation | Semiconductor devices containing a discontinuous cap layer and methods for forming same |
US6911397B2 (en) * | 2002-04-17 | 2005-06-28 | Samsung Electronics, Co., Ltd. | Method of forming dual damascene interconnection using low-k dielectric |
US20040056366A1 (en) * | 2002-09-25 | 2004-03-25 | Maiz Jose A. | A method of forming surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement |
US20050032355A1 (en) * | 2003-08-04 | 2005-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual damascene method for ultra low K dielectrics |
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US20080116481A1 (en) * | 2006-11-21 | 2008-05-22 | Sharma Ajay K | Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal |
US7790631B2 (en) | 2006-11-21 | 2010-09-07 | Intel Corporation | Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal |
US20080157365A1 (en) * | 2006-12-27 | 2008-07-03 | Andrew Ott | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor |
US8120114B2 (en) | 2006-12-27 | 2012-02-21 | Intel Corporation | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate |
US8399317B2 (en) | 2006-12-27 | 2013-03-19 | Intel Corporation | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor |
US20150162277A1 (en) * | 2013-12-05 | 2015-06-11 | International Business Machines Corporation | Advanced interconnect with air gap |
US9214429B2 (en) | 2013-12-05 | 2015-12-15 | Stmicroelectronics, Inc. | Trench interconnect having reduced fringe capacitance |
US10546743B2 (en) | 2013-12-05 | 2020-01-28 | Stmicroelectronics, Inc. | Advanced interconnect with air gap |
Also Published As
Publication number | Publication date |
---|---|
WO2003028092A2 (en) | 2003-04-03 |
DE60207879D1 (en) | 2006-01-12 |
ATE312411T1 (en) | 2005-12-15 |
TW559958B (en) | 2003-11-01 |
CN1263114C (en) | 2006-07-05 |
US20030064580A1 (en) | 2003-04-03 |
EP1430525B1 (en) | 2005-12-07 |
WO2003028092A3 (en) | 2003-08-28 |
DE60207879T2 (en) | 2006-08-17 |
EP1430525A2 (en) | 2004-06-23 |
MY130377A (en) | 2007-06-29 |
US6992391B2 (en) | 2006-01-31 |
CN1535477A (en) | 2004-10-06 |
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