US20050146919A1 - Memory system segmented power supply and control - Google Patents
Memory system segmented power supply and control Download PDFInfo
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- US20050146919A1 US20050146919A1 US10/748,460 US74846003A US2005146919A1 US 20050146919 A1 US20050146919 A1 US 20050146919A1 US 74846003 A US74846003 A US 74846003A US 2005146919 A1 US2005146919 A1 US 2005146919A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
Definitions
- Computer systems continue to be designed to meet the two often opposing goals of increased performance and decreased power consumption (sometimes manifesting in trying to maintain a level of power consumption while increasing performance).
- the struggle to meet both goals becomes quite evident in the case of electronic devices such as portable computer systems (including notebook and handheld computers), networking appliances (including firewall appliances and intelligent routers), and banks of servers (including blade and telco servers), all of which employ memory systems having considerable quantities of DRAM (dynamic random access memory).
- portable computer systems including notebook and handheld computers
- networking appliances including firewall appliances and intelligent routers
- servers including blade and telco servers
- DRAM dynamic random access memory
- FIG. 1 is a block diagram of an embodiment employing a memory system.
- FIG. 2 is a block diagram of another embodiment employing a memory system.
- FIG. 3 is a block diagram of an embodiment employing a memory device.
- FIG. 4 is a block diagram of another embodiment employing a memory device.
- FIG. 5 is a block diagram of still another embodiment employing a memory device.
- FIG. 6 is a block diagram of yet another embodiment employing a memory device.
- FIG. 7 is a block diagram of an embodiment employing a memory device having a point-to-point interface.
- FIG. 8 is a block diagram of another embodiment employing a memory device having a point-to-point interface.
- FIG. 9 is a block diagram of another embodiment employing a computer system.
- Embodiments of the present invention concern segmenting the power supply used for memory devices such that different power supplies are used to supply power at differing voltage levels for DRAM memory cells and at least a portion of DRAM interface logic, thereby reducing the overall amount of power required by DRAM devices.
- memory cells may be organized in any of a number of ways, including into banks and with or without interleaving, arrays of more than two dimensions, content-addressable, etc.
- FIG. 1 is a block diagram of one embodiment employing a memory system.
- Memory system 100 is made up, at least in part, of memory controller 180 and memory device 190 coupled together via memory bus 181 .
- FIG. 1 depicts one form of a relatively simple memory system, and that alternate embodiments are possible in which the exact arrangement and configuration of components may be reduced, augmented or otherwise altered without departing from the spirit and scope of the present invention as hereinafter claimed.
- memory system 100 is depicted as having only one memory bus 181 and only one memory device 190 for the sake of simplicity in the discussion that follows, it will be readily understood by those skilled in the art that other possible embodiments of memory system 100 may be made up of multiple memory buses and/or devices without departing from the spirit and scope of the claimed invention.
- Memory controller 180 controls the functions carried out by memory device 190 as part of providing access to memory device 190 to external devices (not shown) coupled to memory controller 180 , such as a processor, bus mastering I/O controller, etc. Specifically, an external device coupled to memory controller 180 issues commands to memory controller 180 either to store data within memory device 190 , or to retrieve stored data from memory device 190 . Memory controller 180 receives these commands and relays them to memory device 190 in a format having timing and protocols compatible with memory bus 181 and/or the combination of control logic 191 and data buffer 196 that make up the interface between memory device 190 and memory bus 181 . In effect, memory controller 180 coordinates accesses made to memory cells within memory device 190 in answer to read and write commands from external devices. In support of these functions in various embodiments, memory controller 180 also coordinates various maintenance operations that must be performed to ensure that data stored within memory device 190 is preserved, including the initiation of regular refresh operations and the occurrence of precharge operations as needed between accesses.
- Memory bus 181 is made up of various control, address and data signal lines coupling together memory controller 180 and memory device 190 .
- the exact quantity and characteristics of the various signal lines making up various possible embodiments of memory bus 181 may be configured to be interoperable with any of a number of possible memory interfaces, including those meant to be compatible with known types of memory devices, among them being DRAM (dynamic random access memory) devices such as FPM (fast page mode) memory devices, EDO (extended data out), dual-port VRAM (video random access memory), window RAM, SDR (single data rate), DDR (double data rate), RAMBUSTM DRAM, etc.
- DRAM dynamic random access memory
- FPM fast page mode
- EDO extended data out
- dual-port VRAM video random access memory
- window RAM SDR (single data rate), DDR (double data rate), RAMBUSTM DRAM, etc.
- one or more of the signal lines serves to transmit a clock signal between memory controller 180 and memory device 190 .
- one or more control signals and address signals may be multiplexed onto common signal lines such that control signals and address signals are transmitted at different times on common conductors for carrying signals between memory controller 180 and memory device 190 .
- one or more address signals and data signals may be multiplexed onto common signal lines.
- Memory device 190 is a DRAM memory device with an interface made up of control logic 191 and data buffer 196 configured to be interoperable with memory bus 181 .
- memory device 190 is a single integrated circuit.
- memory device 190 is made up of multiple integrated circuits of a removable memory module, such as a SIMM (single inline memory module), SIPP (single inline pin package), DIMM (dual inline memory module), etc.
- SIMM single inline memory module
- SIPP single inline pin package
- DIMM dual inline memory module
- control logic 191 receives at least some commands and addresses from memory controller 180 through memory bus 181 , and uses bank selection logic 192 and row address decoder 193 to gain access to the appropriate rows, while using column address decoder 194 , I/O multiplexer 195 and/or data buffer 196 to carry out the appropriate actions, at least for read and write commands. Control logic 191 further coordinates the carrying out of commands received from memory controller 180 with the refreshing of memory cells within banks 198 a - d by refresh control logic 197 .
- memory controller 180 and memory device 190 receive power from power source 170 .
- Memory controller 180 is supplied with logic level power through logic level power line 174 .
- this same logic level power received by memory controller 180 is selectively supplied to a portion of memory device 190 through logic power control 176 under the control of memory controller 180 .
- this same logic level power received by memory controller 180 is supplied to a portion of memory device 190 directly from logic level power line 174 without intervening logic power control 176 .
- This portion of memory device 190 supplied with logic level power (outlined with a dotted rectangle) is made up, at least in part, of control logic 191 , bank selection logic 192 , column address decoder 194 , I/O multiplexer 195 and data buffer 196 .
- another portion of memory device 190 receives storage level power through storage level power line 172 (also outlined with a dotted rectangle).
- This portion of memory device 190 supplied with storage level power is made up, at least in part, of refresh control logic 197 , row address decoder 193 and banks 198 a - d.
- control logic 191 bank selection logic 192 , row address decoder 193 , column address decoder 194 , I/O multiplexer 195 , data buffer 196 and refresh control logic 197 are supplied with one or the other of logic level power via logic level power line 177 or storage level power via storage level power line 172 may depart in various embodiments from what is depicted in FIG. 1 without departing from the spirit and scope of the claimed invention.
- control logic 191 , bank selection logic 192 , row address decoder 193 , column address decoder 194 , I/O multiplexer 195 , data buffer 196 , and refresh control logic 197 are logic circuit devices, and as logic circuit devices, are able to be designed to make use of recent improvements in transistors and other technologies that have become available for logic circuit design, including the use of ever smaller transistors.
- Such smaller transistors in logic circuits do not require as high a voltage level to distinguish between 0 and 1 bit values as do larger transistors, and so such smaller transistors can be operated more efficiently at lower voltage levels.
- memory device 190 with two different power sources affords an opportunity to save power in situations when the electronic system of which memory system 100 is placed in a lower power state such that accesses to store data within memory device 190 or retrieve data from memory device 190 are suspended.
- a lower power state it may be desirable to provide memory device 190 with power only to the degree necessary to preserve data stored within banks 198 a - d , and this may be accomplished in some embodiments by allowing the logic level power provided via logic level power line 177 to be selectively turned off via logic power control 176 .
- row address decoder 193 and refresh control logic 197 may use the storage level power supplied via storage level power line 172 such that refresh control logic 197 is able to continue to initiate refresh cycles on rows within banks 198 a - d possibly selected at intervals via a counter within refresh control logic 197 , and row address decoder 193 is able to continue selecting the rows specified by refresh control logic 197 to be put through a refresh operation.
- the provision of storage level power to at least row address decoder 193 may be necessary for row address decoder 193 to properly drive word lines within banks 198 a - d with sufficient voltage levels.
- the provision of other components within memory device 190 that are directly coupled to banks 198 a - d such as I/O multiplexer 195 , with storage level power may also be necessary, again to support signaling with sufficient voltage levels.
- control logic 191 and data buffer 196 Supplying the same logic level power to control logic 191 and data buffer 196 as is supplied to memory controller 180 permits control logic 191 and data buffer 196 to operate at a more efficient voltage level that does not waste electrical energy. Sharing this same lower voltage also provides the opportunity to use a lower voltage level in signaling across memory bus 181 between memory controller 180 and memory device 190 , and the resulting opportunity to make use of lower voltage swings to convey control, address, data and/or other signals affords the further opportunity to increase the rate at which such signals are transmitted across memory bus 181 , which in turn, provides the further opportunity to increase the performance of memory bus 181 .
- sharing this same lower voltage level may also alleviate the need to design the interface within memory controller 180 to couple memory controller 180 to memory bus 181 to accommodate higher voltage levels, thereby potentially simplifying the design of that interface within memory controller 180 and/or potentially allowing a faster interface to be more easily provided.
- the reduction in power consumed by having memory bus 181 and the interfaces to memory bus 181 within both memory controller 180 and memory device 190 can become significant, especially where multiple ones of memory device 190 make up memory system 100 .
- FIG. 2 is a block diagram of another embodiment employing a memory system.
- memory system 200 is made up, at least in part, of memory controller 280 and memory device 290 coupled together via memory bus 281 .
- FIG. 2 depicts one form of a relatively simple memory system, and that alternate embodiments are possible in which the exact arrangement and configuration of components may be reduced, augmented or otherwise altered without departing from the spirit and scope of the present invention as hereinafter claimed.
- Memory controller 280 controls the functions carried out by memory device 290 as part of providing access to memory device 290 to external devices (not shown) coupled to memory controller 280 , such as a processor, bus mastering I/O controller, etc.
- Memory controller 280 coordinates accesses made to memory cells within memory device 290 in answer to read and write commands from external devices.
- Memory controller 280 also coordinates various maintenance operations that must be performed to ensure that data stored within memory device 290 is preserved, including the initiation of regular refresh operations and the occurrence of precharge operations as needed between accesses.
- Memory bus 281 is made up of various control, address and data signal lines coupling together memory controller 280 and memory device 290 .
- Memory device 290 is a DRAM memory device with an interface made up of control logic 291 and data buffer 296 configured to be interoperable with memory bus 281 .
- memory device 290 is a single integrated circuit, and in other embodiments, memory device 290 is made up of multiple integrated circuits of a removable memory module.
- the memory cells of memory device 290 are grouped into multiple banks, such as banks 298 a - d , with each bank being organized into a two dimensional array of memory cells having rows and columns.
- memory controller 280 is supplied with logic level power through logic level power line 274 .
- This same logic level power is selectively supplied to a portion of memory device 290 through logic power control 276 under the control of memory controller 280 , namely a portion encompassing control logic 291 , banks selection logic 292 , column address decoder 294 , I/O multiplexer 295 and data buffer 296 .
- This same logic level power is also supplied to another portion of memory device 290 directly from logic level power line 274 without intervening logic power control 276 , namely a portion encompassing row address decoder 293 and refresh control logic 297 .
- Another portion of memory device 290 receives storage level power through storage level power line 272 , namely a portion encompassing banks 298 a - d .
- control logic 291 bank selection logic 292 , row address decoder 293 , column address decoder 294 , I/O multiplexer 295 , data buffer 296 and refresh control logic 297 are supplied with one or the other of logic level power or storage level power, as well as the choice as to whether logic level power is selectively supplied through logic power control 276 , or not, may depart in various embodiments from what is depicted in FIG. 2 without departing from the spirit and scope of the claimed invention.
- banks 298 a - d continue to be supplied with storage level power to preserve the contents of the memory cells within banks 298 a - d .
- row address decoder 293 and refresh control logic 297 may use logic level power supplied via logic level power line 274 such that refresh control logic 297 is able to continue to initiate refresh cycles on rows within banks 298 a - d possibly selected at intervals via a counter within refresh control logic 297 , and row address decoder 293 is able to continue selecting the rows specified by refresh control logic 297 to be put through a refresh operation.
- the provision of storage level power to at least row address decoder 293 may be necessary for row address decoder 293 to properly drive word lines within banks 298 a - d with sufficient voltage levels.
- the provision of other components within memory device 290 that are directly coupled to banks 298 a - d , such as I/O multiplexer 295 , with storage level power may also be necessary, again to support signaling with sufficient voltage levels.
- control logic 291 and data buffer 296 In a manner not unlike memory system 100 of FIG. 1 , supplying the same logic level power to control logic 291 and data buffer 296 as is supplied to memory controller 280 permits control logic 291 and data buffer 296 to operate at a more efficient voltage level that does not waste electrical energy. Sharing this same lower voltage also provides the opportunity to use a lower voltage level in signaling across memory bus 281 between memory controller 280 and memory device 290 , and the resulting opportunity to make use of lower voltage swings to convey control, address, data and/or other signals affords the further opportunity to increase the rate at which such signals are transmitted across memory bus 281 , which in turn, provides the further opportunity to increase the performance of memory bus 281 .
- FIG. 3 is a block diagram of one embodiment employing a memory device.
- memory device 390 is made up, at least in part, of memory circuits 398 a - i assembled together as ICs on a substrate (such as a circuitboard) or as dies within a multiple die package. More specifically, in some embodiments, memory device 390 is an unbuffered DIMM (dual inline memory module).
- DIMM dual inline memory module
- Each of memory circuits 398 a - i is made up, at least in part, of memory cell arrays 399 a - i , higher power logic 397 a - i and lower power logic 396 a - i , respectively.
- Each of lower power logic 396 a - i is coupled to memory bus 381 , and together with corresponding ones of higher power logic 397 a - i , couples corresponding ones of memory arrays 399 a - i within memory device 390 to a memory controller and/or other devices (not shown) also coupled to memory bus 381 outside of memory device 390 .
- Lower power logic 396 a - i are all supplied with logic level power from logic level power line 377
- both higher power logic 397 a - i and memory cells 399 a - i are all supplied with storage level power from storage level power line 372 .
- Each of memory cell arrays 399 a - i is made up of numerous memory cells organized into at least a single two-dimensional array. To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 399 a - i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier.
- Each one of lower power logic 396 a - i together with corresponding ones of higher power logic 397 a - i , provides the interface logic that carries out commands received from memory bus 381 to either store data within or retrieve data from corresponding ones of memory cell arrays 399 a - i , as well as carrying out other various functions.
- the splitting of this interface logic between lower power and higher power logic may, in some embodiments, allow the portions of this interface logic within each of higher power logic 397 a - i that are more closely coupled to memory cell arrays 399 a - i to use the storage level power supplied via storage level power line 372 to interact with corresponding ones of memory cell arrays 399 a - i with signaling voltage levels that may be more easily compatible with memory cell arrays 399 a - i .
- this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 396 a - i that are more closely coupled to memory bus 381 to use the logic level power supplied via logic level power line 377 to interact with memory bus 381 with signaling voltage levels that may be more easily compatible with other devices coupled to memory bus 381 .
- the voltage level of the logic level power supplied via logic level power line 377 is lower than the voltage level of the storage level power supplied via storage level power line 372 in recognition of the possible advantages of using lower voltage signaling across memory bus 381 , including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data across memory bus 381 .
- the separation of this interface logic between lower power logic 396 a - i and higher power logic 397 a - i may allow power supplied to at least those portions of the interface logic that are more closely coupled to memory bus 381 (i.e., portions within lower power logic 396 a - i ) to be powered down by turning off the logic level power supplied via logic level power line 377 at times when some or all of the signal lines making up memory bus 381 are powered down. At such times when logic level power line 377 is powered down, storage level power line 372 remains turned on to continue supplying storage level power to both higher power logic 397 a - i and memory cell arrays 399 a - i .
- the turning off of logic level power supplied via logic level power line 377 coincides with memory device 390 being placed in a lower power state such as self-refresh mode where at least a portion of higher power logic 397 a - i uses the storage level power that continues to be supplied via storage level power line 372 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 399 a - i.
- portions e.g., pages or rows of memory cells
- the portions of interface logic making up each of higher power logic 397 a - i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from storage level power line 372 at times when logic level power line 377 is turned off as part of memory device 390 entering a lower power state.
- the design of each of memory cell arrays 399 a - i may be such that any portions of interface logic directly coupled to the memory cells must be among those portions making up each of higher power logic 397 a - i.
- FIG. 4 is a block diagram of another embodiment employing a memory device, with memory device 490 being somewhat similar to memory device 390 of FIG. 3 .
- memory device 490 is made up, at least in part, of memory circuits 498 a - i assembled together as ICs on a substrate or as dies within a multiple die package.
- memory device 490 is an unbuffered DIMM.
- Each of memory circuits 498 a - i is made up, at least in part, of memory cell arrays 499 a - i , unswitched power logic 497 a - i and lower power logic 496 a - i , respectively.
- Each of lower power logic 496 a - i is coupled to memory bus 481 , and together with corresponding ones of unswitched power logic 497 a - i , couples corresponding ones of memory arrays 499 a - i within memory device 490 to a memory controller and/or other devices (not shown) also coupled to memory bus 481 outside of memory device 390 .
- Lower power logic 496 a - i are all supplied with logic level power from logic level power line 477
- constant power logic 497 a - i are all supplied with unswitched power from unswitched power line 474
- memory cells 499 a - i are all supplied with storage level power from storage level power line 472 .
- Each of memory cell arrays 499 a - i is made up of numerous memory cells organized into at least a single two-dimensional array. To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 499 a - i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier.
- Each one of lower power logic 496 a - i together with corresponding ones of unswitched power logic 497 a - i , provides the interface logic that carries out commands received from memory bus 481 to either store data within or retrieve data from corresponding ones of memory cell arrays 499 a - i , as well as carrying out other various functions.
- the splitting of this interface logic between lower power and unswitched power logic may, in some embodiments, allow the portions of this interface logic within each of unswitched power logic 497 a - i that are more closely coupled to memory cell arrays 499 a - i to use a form of unswitched power supplied via unswitched power line 474 having a voltage high enough to interact with corresponding ones of memory cell arrays 499 a - i with signaling voltage levels that may be more easily compatible with memory cell arrays 499 a - i .
- this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 496 a - i that are more closely coupled to memory bus 481 to use the logic level power supplied via logic level power line 477 to interact with memory bus 481 with signaling voltage levels that may be more easily compatible with other devices coupled to memory bus 481 .
- the voltage level of the logic level power supplied via logic level power line 477 is lower than the voltage level of the storage level power supplied via storage level power line 472 in recognition of the possible advantages of using lower voltage signaling across memory bus 481 , including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data across memory bus 481 .
- the separation of this interface logic between lower power logic 496 a - i and unswitched power logic 497 a - i may allow power supplied to at least those portions of the interface logic that are more closely coupled to memory bus 481 (i.e., portions within lower power logic 496 a - i ) to be powered down by turning off the logic level power supplied via logic level power line 477 at times when some or all of the signal lines making up memory bus 481 are powered down.
- both unswitched power line 474 and storage level power line 472 remain turned on to continue supplying unswitched power and storage level power to both unswitched power logic 497 a - i and memory cell arrays 499 a - i , respectively.
- the turning off of logic level power supplied via logic level power line 477 coincides with memory device 490 being placed in a lower power state such as self-refresh mode where at least a portion of unswitched power logic 497 a - i uses the unswitched power that continues to be supplied via unswitched power line 474 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 499 a - i.
- the voltage level of the unswitched power supplied via unswitched power line 474 is similar to the voltage level of the logic level power supplied via logic level power line 477 .
- lower power logic 496 a - i and unswitched power logic 497 a - i are supplied with power at similar voltage levels such that efficiencies of lower voltage operation of logic circuits may be realized (as described at length, above) the supplying of separate unswitched power and logic level power may be done to allow for the switching off of the logic level power, as described above, while the unswitched power at a similar voltage level continues to be supplied.
- the voltage level of the unswitched power supplied via unswitched power line 474 may be chosen to be somewhere between the voltage levels of the logic level power and storage level power so as to allow unswitched power logic 497 a - i to operate with signaling levels chosen to be more easily compatible with both lower power logic 496 a - i and memory cell arrays 499 a - i , respectively.
- the portions of interface logic making up each of unswitched power logic 497 a - i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from unswitched power line 474 at times when logic level power line 477 is turned off as part of memory device 490 entering a lower power state.
- FIG. 5 is a block diagram of still another embodiment employing a memory device, with memory device 590 being largely identical to memory device 390 of FIG. 3 except for the addition of buffer logic 592 separating some of the signals of memory bus 581 from other portions of memory device 590 , effectively creating two memory buses 581 and 594 where some of the signals are buffered and/or latched between memory buses 581 and 594 , while other signals are directly connected between memory buses 581 and 594 .
- memory device 590 is a registered DIMM where address and/or command signals are buffered and/or latched through buffer logic 592 , while data signals are directly connected between memory buses 581 and 594 .
- buffer logic 592 separating some of the signals of memory bus 581 from other portions of memory device 590 , effectively creating two memory buses 581 and 594 where some of the signals are buffered and/or latched between memory buses 581 and 594 , while other signals are directly connected between memory buses 581 and 594 .
- memory device 590
- memory device 590 is made up, at least in part, of memory circuits 598 a - i assembled together as ICs on a substrate or as dies within a multiple die package, and buffer logic 592 .
- Each of memory circuits 598 a - i is made up, at least in part, of memory cell arrays 599 a - i , higher power logic 597 a - i and lower power logic 596 a - i , respectively.
- Both buffer logic 592 and lower power logic 596 a - i are all supplied with logic level power from logic level power line 577 , and both higher power logic 597 a - i and memory cells 599 a - i are all supplied with storage level power from storage level power line 572 .
- each of memory cell arrays 599 a - i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier.
- Each one of lower power logic 596 a - i together with corresponding ones of higher power logic 597 a - i , provides the interface logic that carries out commands received through memory buses 581 and 594 to either store data within or retrieve data from corresponding ones of memory cell arrays 599 a - i , as well as carrying out other various functions.
- the splitting of this interface logic between lower power and higher power logic may, in some embodiments, allow the portions of this interface logic within each of higher power logic 597 a - i that are more closely coupled to memory cell arrays 599 a - i to use the storage level power supplied via storage level power line 572 to interact with corresponding ones of memory cell arrays 599 a - i with signaling voltage levels that may be more easily compatible with memory cell arrays 599 a - i .
- this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 596 a - i that are more closely coupled to buffer logic 592 and/or memory buses 581 and/or 594 to use the logic level power supplied via logic level power line 577 to interact with buffer logic 592 and/or memory buses 581 and/or 594 with signaling voltage levels that may be more easily compatible with buffer logic 592 and/or other devices coupled to memory bus 581 and/or 594 .
- the voltage level of the logic level power supplied via logic level power line 577 is lower than the voltage level of the storage level power supplied via storage level power line 572 in recognition of the possible advantages of using lower voltage signaling with buffer logic 592 and/or across memory bus 581 and/or 594 , including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data across memory buses 581 and/or 594 .
- the separation of this interface logic between lower power logic 596 a - i and higher power logic 597 a - i may allow power supplied to at least those portions of the interface logic that are more closely coupled to buffer logic 592 and/or memory buses 581 and/or 594 (i.e., portions within lower power logic 596 a - i ) to be powered down by turning off the logic level power supplied via logic level power line 577 at times when some or all of the signal lines making up memory bus 581 are powered down. At such times when logic level power line 577 is powered down, storage level power line 572 remains turned on to continue supplying storage level power to both higher power logic 597 a - i and memory cell arrays 599 a - i .
- the turning off of logic level power supplied via logic level power line 577 coincides with memory device 590 being placed in a lower power state such as self-refresh mode where at least a portion of higher power logic 597 a - i uses the storage level power that continues to be supplied via storage level power line 572 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 599 a - i.
- portions e.g., pages or rows of memory cells
- the portions of interface logic making up each of higher power logic 597 a - i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from storage level power line 572 at times when logic level power line 577 is turned off as part of memory device 590 entering a lower power state.
- the design of each of memory cell arrays 599 a - i may be such that any portions of interface logic directly coupled to the memory cells must be among those portions making up each of higher power logic 597 a - i.
- FIG. 6 is a block diagram of yet another embodiment employing a memory device, with memory device 690 being largely identical to memory device 490 of FIG. 4 except for the addition of buffer logic 692 separating some of the signals of memory bus 681 from other portions of memory device 690 , effectively creating two memory buses 681 and 694 where some of the signals are buffered and/or latched between memory buses 681 and 694 , while other signals are directly connected between memory buses 681 and 694 .
- memory device 690 is a registered DIMM where address and/or command signals are buffered and/or latched through buffer logic 692 , while data signals are directly connected between memory buses 681 and 694 .
- buffer logic 692 separating some of the signals of memory bus 681 from other portions of memory device 690 , effectively creating two memory buses 681 and 694 where some of the signals are buffered and/or latched between memory buses 681 and 694 , while other signals are directly connected between memory buses 681 and 694 .
- memory device 690
- memory device 690 is made up, at least in part, of memory circuits 698 a - i assembled together as ICs on a substrate or as dies within a multiple die package, and buffer logic 692 .
- Each of memory circuits 698 a - i is made up, at least in part, of memory cell arrays 699 a - i , unswitched power logic 697 a - i and lower power logic 696 a - i , respectively.
- Both buffer logic 692 and lower power logic 696 a - i are all supplied with logic level power from logic level power line 677 , constant power logic 697 a - i are all supplied with unswitched power from unswitched power line 674 , and memory cells 699 a - i are all supplied with storage level power from storage level power line 672 .
- each of memory cell arrays 699 a - i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier.
- Each one of lower power logic 696 a - i together with corresponding ones of unswitched power logic 697 a - i , provides the interface logic that carries out commands received through memory buses 681 and 694 to either store data within or retrieve data from corresponding ones of memory cell arrays 699 a - i , as well as carrying out other various functions.
- the splitting of this interface logic between lower power and unswitched power logic may, in some embodiments, allow the portions of this interface logic within each of unswitched power logic 697 a - i that are more closely coupled to memory cell arrays 699 a - i to use a form of unswitched power supplied via unswitched power line 674 having a voltage high enough to interact with corresponding ones of memory cell arrays 699 a - i with signaling voltage levels that may be more easily compatible with memory cell arrays 699 a - i .
- this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 696 a - i that are more closely coupled to buffer logic 692 and/or memory buses 681 and/or 694 to use the logic level power supplied via logic level power line 677 to interact with buffer logic 692 and/or memory buses 681 and/or 694 with signaling voltage levels that may be more easily compatible with buffer logic 692 and/or other devices coupled to memory bus 681 and/or 694 .
- the voltage level of the logic level power supplied via logic level power line 677 is lower than the voltage level of the storage level power supplied via storage level power line 672 in recognition of the possible advantages of using lower voltage signaling across memory buses 681 and/or 694 , including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data across memory buses 681 and/or 694 .
- the separation of this interface logic between lower power logic 696 a - i and unswitched power logic 697 a - i may allow power supplied to at least those portions of the interface logic that are more closely coupled to buffer logic 692 and/or memory bus 681 and/or 694 (i.e., portions within lower power logic 696 a - i ) to be powered down by turning off the logic level power supplied via logic level power line 677 at times when some or all of the signal lines making up memory bus 681 are powered down.
- both unswitched power line 674 and storage level power line 672 remain turned on to continue supplying unswitched power and storage level power to both unswitched power logic 697 a - i and memory cell arrays 699 a - i , respectively.
- the turning off of logic level power supplied via logic level power line 677 coincides with memory device 690 being placed in a lower power state such as self-refresh mode where at least a portion of unswitched power logic 697 a - i uses the unswitched power that continues to be supplied via unswitched power line 674 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 699 a - i.
- the voltage level of the unswitched power supplied via unswitched power line 674 is similar to the voltage level of the logic level power supplied via logic level power line 677 .
- lower power logic 696 a - i and unswitched power logic 697 a - i are supplied with power at similar voltage levels such that efficiencies of lower voltage operation of logic circuits may be realized (as described at length, above) the supplying of separate unswitched power and logic level power may be done to allow for the switching off of the logic level power, as described above, while the unswitched power at a similar voltage level continues to be supplied.
- the voltage level of the unswitched power supplied via unswitched power line 674 may be chosen to be somewhere between the voltage levels of the logic level power and storage level power so as to allow unswitched power logic 697 a - i to operate with signaling levels chosen to be more easily compatible with both lower power logic 696 a - i and memory cell arrays 699 a - i , respectively.
- the portions of interface logic making up each of unswitched power logic 697 a - i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from unswitched power line 674 at times when logic level power line 677 is turned off as part of memory device 690 entering a lower power state.
- FIG. 7 is a block diagram of still another embodiment employing a memory device, with memory device 790 being largely identical to memory device 590 of FIG. 5 except for the replacement of buffer logic 592 in memory device 590 with buffer logic 792 having a pair of point-to-point interfaces in memory device 790 .
- the point-to-point interfaces of buffer logic 792 couple memory bus 794 of memory device 790 with memory busses 781 and 782 , allowing memory device 790 to be coupled to one or two other devices making up a memory system, including memory controllers and/or other memory devices.
- Such point-to-point interfaces may be made up of sets of unidirectional signal lines (perhaps matched sets in opposite directions) and/or at least one set of bidirectional signal lines.
- memory device 790 is made up, at least in part, of memory circuits 798 a - i assembled together as ICs on a substrate or as dies within a multiple die package, and buffer logic 792 .
- memory device 790 is a fully buffered DIMM.
- each of memory circuits 798 a - i is made up, at least in part, of memory cell arrays 799 a - i , higher power logic 797 a - i and lower power logic 796 a - i , respectively.
- Each of lower power logic 796 a - i is coupled to memory buses 781 and 782 through buffer logic 792 and memory bus 794 for access to at least the majority of the signal lines making up memory buses 781 and 782 , although there may be a smaller number of signals making memory buses 781 and/or 782 to which each of lower power logic 796 a - i may be directly coupled.
- Both buffer logic 792 and lower power logic 796 a - i are all supplied with logic level power from logic level power line 777 , and both higher power logic 797 a - i and memory cells 799 a - i are all supplied with storage level power from storage level power line 772 .
- each of memory cell arrays 799 a - i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier.
- Each one of lower power logic 796 a - i together with corresponding ones of higher power logic 797 a - i , provides the interface logic that carries out commands received through memory buses 781 , 782 and/or 794 to either store data within or retrieve data from corresponding ones of memory cell arrays 799 a - i , as well as carrying out other various functions.
- the splitting of this interface logic between lower power and higher power logic may, in some embodiments, allow the portions of this interface logic within each of higher power logic 797 a - i that are more closely coupled to memory cell arrays 799 a - i to use the storage level power supplied via storage level power line 772 to interact with corresponding ones of memory cell arrays 799 a - i with signaling voltage levels that may be more easily compatible with memory cell arrays 799 a - i .
- this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 796 a - i that are more closely coupled to buffer logic 792 and/or memory buses 781 , 782 and/or 794 to use the logic level power supplied via logic level power line 777 to interact with buffer logic 792 and/or memory buses 781 , 782 and/or 794 with signaling voltage levels that may be more easily compatible with buffer logic 792 and/or other devices coupled to memory buses 781 , 782 and/or 794 .
- the voltage level of the logic level power supplied via logic level power line 777 is lower than the voltage level of the storage level power supplied via storage level power line 772 in recognition of the possible advantages of using lower voltage signaling with buffer logic 792 and/or across memory buses 781 and/or 782 , including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data across memory buses 781 , 782 and/or 794 .
- the separation of this interface logic between lower power logic 796 a - i and higher power logic 797 a - i may allow power supplied to at least those portions of the interface logic that are more closely coupled to buffer logic 792 and/or memory buses 781 , 782 and/or 794 (i.e., portions within lower power logic 796 a - i ) to be powered down by turning off the logic level power supplied via logic level power line 777 at times when some or all of the signal lines making up memory buses 781 and/or 782 are powered down.
- logic level power line 777 At such times when logic level power line 777 is powered down, storage level power line 772 remains turned on to continue supplying storage level power to both higher power logic 797 a - i and memory cell arrays 799 a - i . Also, in some embodiments, the turning off of logic level power supplied via logic level power line 777 coincides with memory device 790 being placed in a lower power state such as self-refresh mode where at least a portion of higher power logic 797 a - i uses the storage level power that continues to be supplied via storage level power line 772 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 799 a - i.
- portions e.g., pages or rows of memory cells
- the portions of interface logic making up each of higher power logic 797 a - i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from storage level power line 772 at times when logic level power line 777 is turned off as part of memory device 790 entering a lower power state.
- the design of each of memory cell arrays 799 a - i may be such that any portions of interface logic directly coupled to the memory cells must be among those portions making up each of higher power logic 797 a - i.
- FIG. 8 is a block diagram of yet another embodiment employing a memory device, with memory device 890 being largely identical to memory device 690 of FIG. 6 except for the replacement of buffer logic 692 in memory device 690 with buffer logic 892 having a pair of point-to-point interfaces in memory device 890 .
- the point-to-point interfaces of buffer logic 892 couple memory bus 894 of memory device 890 with memory busses 881 and 882 , allowing memory device 890 to be coupled to one or two other devices making up a memory system, including memory controllers and/or other memory devices.
- Such point-to-point interfaces may be made up of sets of unidirectional signal lines (perhaps matched sets in opposite directions) and/or at least one set of bidirectional signal lines.
- memory device 890 is made up, at least in part, of memory circuits 898 a - i assembled together as ICs on a substrate or as dies within a multiple die package, and buffer logic 892 .
- memory device 890 is a fully buffered DIMM.
- each of memory circuits 898 a - i is made up, at least in part, of memory cell arrays 899 a - i , unswitched power logic 897 a - i and lower power logic 896 a - i , respectively.
- Each of lower power logic 896 a - i is coupled to memory buses 881 and 882 through buffer logic 892 and memory bus 894 for access to at least the majority of the signal lines making up memory buses 881 and 882 , although there may be a smaller number of signals making up memory buses 881 and/or 882 to which each of lower power logic 896 a - i may be directly coupled.
- Both buffer logic 892 and lower power logic 896 a - i are all supplied with logic level power from logic level power line 877 , constant power logic 897 a - i are all supplied with unswitched power from unswitched power line 874 , and memory cells 899 a - i are all supplied with storage level power from storage level power line 872 .
- each of memory cell arrays 899 a - i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier.
- Each one of lower power logic 896 a - i together with corresponding ones of unswitched power logic 897 a - i , provides the interface logic that carries out commands received through memory buses 881 , 882 and/or 894 to either store data within or retrieve data from corresponding ones of memory cell arrays 899 a - i , as well as carrying out other various functions.
- the splitting of this interface logic between lower power and unswitched power logic may, in some embodiments, allow the portions of this interface logic within each of unswitched power logic 897 a - i that are more closely coupled to memory cell arrays 899 a - i to use a form of unswitched power supplied via unswitched power line 874 having a voltage high enough to interact with corresponding ones of memory cell arrays 899 a - i with signaling voltage levels that may be more easily compatible with memory cell arrays 899 a - i .
- this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 896 a - i that are more closely coupled to buffer logic 892 and/or memory buses 881 , 882 and/or memory bus 894 to use the logic level power supplied via logic level power line 877 to interact with buffer logic 892 and/or memory buses 881 , 882 and/or 894 with signaling voltage levels that may be more easily compatible with buffer logic 892 and/or other devices coupled to memory buses 881 and/or 882 .
- the voltage level of the logic level power supplied via logic level power line 877 is lower than the voltage level of the storage level power supplied via storage level power line 872 in recognition of the possible advantages of using lower voltage signaling across memory buses 881 , 882 and/or 894 , including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data across memory buses 881 , 882 and/or 894 .
- the separation of this interface logic between lower power logic 896 a - i and unswitched power logic 897 a - i may allow power supplied to at least those portions of the interface logic that are more closely coupled to buffer logic 892 and/or memory buses 881 , 882 and/or 894 (i.e., portions within lower power logic 696 a - i ) to be powered down by turning off the logic level power supplied via logic level power line 877 at times when some or all of the signal lines making up memory buses 881 and/or 882 are powered down.
- both unswitched power line 874 and storage level power line 872 remain turned on to continue supplying unswitched power and storage level power to both unswitched power logic 897 a - i and memory cell arrays 899 a - i , respectively.
- the turning off of logic level power supplied via logic level power line 877 coincides with memory device 890 being placed in a lower power state such as self-refresh mode where at least a portion of unswitched power logic 897 a - i uses the unswitched power that continues to be supplied via unswitched power line 874 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 899 a - i.
- the voltage level of the unswitched power supplied via unswitched power line 874 is similar to the voltage level of the logic level power supplied via logic level power line 877 .
- lower power logic 896 a - i and unswitched power logic 897 a - i are supplied with power at similar voltage levels such that efficiencies of lower voltage operation of logic circuits may be realized (as described at length, above) the supplying of separate unswitched power and logic level power may be done to allow for the switching off of the logic level power, as described above, while the unswitched power at a similar voltage level continues to be supplied.
- the voltage level of the unswitched power supplied via unswitched power line 874 may be chosen to be somewhere between the voltage levels of the logic level power and storage level power so as to allow unswitched power logic 897 a - i to operate with signaling levels chosen to be more easily compatible with both lower power logic 896 a - i and memory cell arrays 899 a - i , respectively.
- the portions of interface logic making up each of unswitched power logic 897 a - i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from unswitched power line 874 at times when logic level power line 877 is turned off as part of memory device 890 entering a lower power state.
- FIGS. 3 through 8 provide a relatively simple depiction of components making up a DRAM device, and that the exact arrangement and configuration of components within a DRAM device may be reduced, augmented or otherwise altered in comparison to what is depicted within those figures without departing from the spirit and scope of the present invention as hereinafter claimed.
- a quantity of memory circuits other than what is depicted in FIGS. 3 through 8 is certainly possible without departing from the spirit and scope of the claimed invention.
- FIG. 9 is a block diagram of an embodiment employing a computer system.
- Computer system 900 is, at least in part, made up of processor 910 , system logic 920 , and memory device 990 .
- System logic 920 is coupled to processor 910 and performs various functions in support of processor 910 including providing processor 910 with access to memory device 990 to which system logic 920 is also coupled, using memory controller 980 within system logic 920 .
- Processor 910 , system logic 920 and memory device 990 make up a form of core for computer system 900 that is capable of supporting the execution of machine readable instructions by processor 910 and the storage of data and instructions within memory device 990 .
- memory controller 980 may be either partially or entirely integrated within processor 910 , with the possible result of processor 910 being directly coupled to and having direct access to memory device 990 .
- processor 910 could be any of a variety of types of processor including a processor capable of executing at least a portion of the widely known and used “x86” instruction set, and in other various embodiments, there could be more than one processor.
- memory device 990 could be any of a variety of types of dynamic random access memory (RAM) including fast page mode (FPM), extended data out (EDO), single data rate (SDR) or double data rate (DDR) forms of synchronous dynamic RAM (SDRAM), RAM of various technologies employing a RAMBUSTM interface, etc., and memory controller 980 provides logic 920 with an appropriate interface for the type of memory.
- FPM fast page mode
- EEO extended data out
- SDR single data rate
- DDR double data rate
- SDRAM synchronous dynamic RAM
- RAM synchronous dynamic RAM
- At least a portion of the memory cells of memory device 990 are divided into banks 999 a - d , each of which are made up of memory cells organized into rows and columns in a two dimensional memory array. To access a portion of the memory cells within memory device 990 , that portion must be addressed by memory controller 980 with a combination of bank, row and column addresses.
- system logic 920 is coupled to and provides processor 910 with access to storage device 960 by which data and/or instructions carried by storage media 961 may be accessed.
- Storage media 961 may be of any of a wide variety of types and technologies as those skilled in the art will understand, including CD or DVD ROM, magnetic or optical diskette, magneto-optical disk, tape, semiconductor memory, characters or perforations on paper or other material, etc.
- nonvolatile memory device 930 is coupled to system logic 920 (or other part of computer system 900 ) and provides storage for an initial series of instructions executed at a time when computer system 900 is either “reset” or initialized (for example, when computer system 900 is “turned on” or “powered up”) to perform tasks needed to prepare computer system 900 for normal use.
- processor 910 accesses nonvolatile memory device 930 to retrieve instructions to be executed to prepare memory controller 970 for normal use in providing access for CPU 910 to memory device 990 . It may be that these same retrieved instructions are executed to prepare system logic 920 for normal use in providing access to storage device 960 and whatever form of storage media 961 that may be used by storage device 960 .
- computer system 900 is further made up of power source 970 supplying logic level power through power line 974 , power control 976 and power line 977 to a portion of memory device 990 , and supplying storage level power through power line 972 to another portion of memory device 990 .
- power control 976 may be operated by logic making up a portion of memory controller 980 , and in other variants, power control 976 may be operated by another portion within a memory system making up computer system 900 or elsewhere within computer system 900 , such as logic dedicated to the function of controlling the distribution of power.
- storage media 961 carries machine-accessible instructions to be executed by processor 910 to cause processor 910 to carry out one or more tests of memory device 990 to determine what type of DRAM device memory device 990 may be, and/or to determine what functions memory device 990 may support.
- tests may include a series of attempted accesses to portions of memory device 990 and observation of the nature of the responses, received.
- such tests may include interrogating a code identifying the type of memory device or identifying the presence of one or more features, or such tests may entail reading data stored in a portion of nonvolatile memory within memory device 990 identifying the type of memory device, various parameters, and/or the presence or absence of various features.
- processor 910 may be caused to program or otherwise configure memory controller 980 and/or other logic within computer system 900 to operate power control 976 to make use of such a capability.
- a characteristic of the design of computer system 900 may preclude the use of memory devices that do not support the use of a segmented power supply.
- any memory device such as memory device 990 , that could be connected to the rest of computer system 900 would, therefore, necessarily support a segmented power system, and so processor 910 may be caused to execute instructions to prepare the use of power control 976 to selectively supply a portion of memory device 990 with power without having carried out a test to confirm that memory device 990 supports a segmented power supply.
Abstract
Description
- Computer systems continue to be designed to meet the two often opposing goals of increased performance and decreased power consumption (sometimes manifesting in trying to maintain a level of power consumption while increasing performance). The struggle to meet both goals becomes quite evident in the case of electronic devices such as portable computer systems (including notebook and handheld computers), networking appliances (including firewall appliances and intelligent routers), and banks of servers (including blade and telco servers), all of which employ memory systems having considerable quantities of DRAM (dynamic random access memory). As ever more uses for such electronic devices are found, there is a need for faster processors, greater quantities of memory, etc. However, as ever more uses for such devices are found, there is a need to consume lesser amounts of power to increase battery life in portable application and to allow for greater densities of electronic devices to be assembled together in centralized facilities.
- This struggle has resulted in efforts to find ways to decrease the amount of power required by each of the components of such electronic devices, including memory devices. Known approaches include creating reduced power modes (commonly referred to as “sleep modes” or “hibernation modes”) for such electronic devices to enter into when not actively being used. Specifically, DRAM devices have been created with lower power modes, including what is commonly referred to in the DRAM device industry as “self refresh” mode where interactions between DRAM devices and other components are minimized. Self refresh modes entail using a minimal amount of logic built into a DRAM device to allow the DRAM device to autonomously carry out maintenance functions such as refreshing the DRAM device's memory cells.
- However, such approaches to reducing DRAM device power consumption have not addressed the problem of power wasted as a result of the growing disparity in the voltage level at which the memory cells within DRAM devices must operate to acquire and preserve a charge indicating bit values within memory cells, and the ever lower voltage levels required by processors and other logic that are often coupled to DRAM devices. As a result of this disparity, inefficient I/O interface and memory controller logic designs must be employed, and opportunities to decrease power consumption and/or to increase the speeds at which memory is accessed by making use of lower voltage interfaces are lost.
- The objects, features, and advantages of the present invention will be apparent to one skilled in the art in view of the following detailed description in which:
-
FIG. 1 is a block diagram of an embodiment employing a memory system. -
FIG. 2 is a block diagram of another embodiment employing a memory system. -
FIG. 3 is a block diagram of an embodiment employing a memory device. -
FIG. 4 is a block diagram of another embodiment employing a memory device. -
FIG. 5 is a block diagram of still another embodiment employing a memory device. -
FIG. 6 is a block diagram of yet another embodiment employing a memory device. -
FIG. 7 is a block diagram of an embodiment employing a memory device having a point-to-point interface. -
FIG. 8 is a block diagram of another embodiment employing a memory device having a point-to-point interface. -
FIG. 9 is a block diagram of another embodiment employing a computer system. - In the following description, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of embodiments of the present invention. However, it will be apparent to one skilled in the art that these specific details are not required in order to practice the present invention as hereinafter claimed.
- Embodiments of the present invention concern segmenting the power supply used for memory devices such that different power supplies are used to supply power at differing voltage levels for DRAM memory cells and at least a portion of DRAM interface logic, thereby reducing the overall amount of power required by DRAM devices. Although the following discussion centers on DRAM devices, it will be understood by those skilled in the art that the present invention as hereinafter claimed may be practiced in support of other memory devices. Also, although at least part of the following discussion centers on memory within computer systems, it will be understood by those skilled in the art that the present invention as hereinafter claimed may be practiced in connection with other electronic devices or systems having memory devices. It will also be understood by those skilled in the art that although the following discussion centers on memory devices in which memory cells are organized in two dimensional arrays of rows and columns, the memory cells may be organized in any of a number of ways, including into banks and with or without interleaving, arrays of more than two dimensions, content-addressable, etc.
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FIG. 1 is a block diagram of one embodiment employing a memory system.Memory system 100 is made up, at least in part, ofmemory controller 180 andmemory device 190 coupled together viamemory bus 181. Those skilled in the art of the design of memory systems will readily recognize thatFIG. 1 depicts one form of a relatively simple memory system, and that alternate embodiments are possible in which the exact arrangement and configuration of components may be reduced, augmented or otherwise altered without departing from the spirit and scope of the present invention as hereinafter claimed. For example, althoughmemory system 100 is depicted as having only onememory bus 181 and only onememory device 190 for the sake of simplicity in the discussion that follows, it will be readily understood by those skilled in the art that other possible embodiments ofmemory system 100 may be made up of multiple memory buses and/or devices without departing from the spirit and scope of the claimed invention. -
Memory controller 180 controls the functions carried out bymemory device 190 as part of providing access tomemory device 190 to external devices (not shown) coupled tomemory controller 180, such as a processor, bus mastering I/O controller, etc. Specifically, an external device coupled tomemory controller 180 issues commands tomemory controller 180 either to store data withinmemory device 190, or to retrieve stored data frommemory device 190.Memory controller 180 receives these commands and relays them tomemory device 190 in a format having timing and protocols compatible withmemory bus 181 and/or the combination ofcontrol logic 191 anddata buffer 196 that make up the interface betweenmemory device 190 andmemory bus 181. In effect,memory controller 180 coordinates accesses made to memory cells withinmemory device 190 in answer to read and write commands from external devices. In support of these functions in various embodiments,memory controller 180 also coordinates various maintenance operations that must be performed to ensure that data stored withinmemory device 190 is preserved, including the initiation of regular refresh operations and the occurrence of precharge operations as needed between accesses. -
Memory bus 181 is made up of various control, address and data signal lines coupling togethermemory controller 180 andmemory device 190. The exact quantity and characteristics of the various signal lines making up various possible embodiments ofmemory bus 181 may be configured to be interoperable with any of a number of possible memory interfaces, including those meant to be compatible with known types of memory devices, among them being DRAM (dynamic random access memory) devices such as FPM (fast page mode) memory devices, EDO (extended data out), dual-port VRAM (video random access memory), window RAM, SDR (single data rate), DDR (double data rate), RAMBUS™ DRAM, etc. In some embodiments, where activity on various signal lines is meant to be coordinated with a clock signal, one or more of the signal lines, perhaps the control signal lines, serves to transmit a clock signal betweenmemory controller 180 andmemory device 190. In some embodiments, one or more control signals and address signals may be multiplexed onto common signal lines such that control signals and address signals are transmitted at different times on common conductors for carrying signals betweenmemory controller 180 andmemory device 190. Also, in some embodiments, one or more address signals and data signals may be multiplexed onto common signal lines. -
Memory device 190 is a DRAM memory device with an interface made up ofcontrol logic 191 anddata buffer 196 configured to be interoperable withmemory bus 181. In some embodiments,memory device 190 is a single integrated circuit. In other embodiments,memory device 190 is made up of multiple integrated circuits of a removable memory module, such as a SIMM (single inline memory module), SIPP (single inline pin package), DIMM (dual inline memory module), etc. - The memory cells of
memory device 190 are grouped into multiple banks, such as banks 198 a-d, with each bank being organized into a two dimensional array of memory cells having rows and columns. However, those skilled in the art will readily recognize that the memory cells within memory device may be organized in any of a number of possible ways. In some embodiments,control logic 191 receives at least some commands and addresses frommemory controller 180 throughmemory bus 181, and usesbank selection logic 192 androw address decoder 193 to gain access to the appropriate rows, while usingcolumn address decoder 194, I/O multiplexer 195 and/ordata buffer 196 to carry out the appropriate actions, at least for read and write commands.Control logic 191 further coordinates the carrying out of commands received frommemory controller 180 with the refreshing of memory cells within banks 198 a-d byrefresh control logic 197. - In various embodiments as depicted in
FIG. 1 ,memory controller 180 andmemory device 190 receive power frompower source 170.Memory controller 180 is supplied with logic level power through logiclevel power line 174. In some embodiments, this same logic level power received bymemory controller 180 is selectively supplied to a portion ofmemory device 190 throughlogic power control 176 under the control ofmemory controller 180. In alternate embodiments, this same logic level power received bymemory controller 180 is supplied to a portion ofmemory device 190 directly from logiclevel power line 174 without interveninglogic power control 176. This portion ofmemory device 190 supplied with logic level power (outlined with a dotted rectangle) is made up, at least in part, ofcontrol logic 191,bank selection logic 192,column address decoder 194, I/O multiplexer 195 anddata buffer 196. However, another portion ofmemory device 190 receives storage level power through storage level power line 172 (also outlined with a dotted rectangle). This portion ofmemory device 190 supplied with storage level power is made up, at least in part, ofrefresh control logic 197,row address decoder 193 and banks 198 a-d. - As those skilled in the art will recognize, the exact choice of which of
control logic 191,bank selection logic 192,row address decoder 193,column address decoder 194, I/O multiplexer 195,data buffer 196 andrefresh control logic 197 are supplied with one or the other of logic level power via logiclevel power line 177 or storage level power via storagelevel power line 172 may depart in various embodiments from what is depicted inFIG. 1 without departing from the spirit and scope of the claimed invention. Likememory controller 180,control logic 191,bank selection logic 192,row address decoder 193,column address decoder 194, I/O multiplexer 195,data buffer 196, andrefresh control logic 197 are logic circuit devices, and as logic circuit devices, are able to be designed to make use of recent improvements in transistors and other technologies that have become available for logic circuit design, including the use of ever smaller transistors. Such smaller transistors in logic circuits do not require as high a voltage level to distinguish between 0 and 1 bit values as do larger transistors, and so such smaller transistors can be operated more efficiently at lower voltage levels. This makes the use of higher voltage levels as would be required by larger transistors with smaller transistors unnecessary, and in many logic circuits employing such smaller transistors, the use of such a higher voltage provides excess electrical energy that cannot be used by such smaller transistors and which, therefore, much be wastefully converted to and dissipated as heat. However, in contrast to such logic circuits, the memory cells of a DRAM device still require a higher voltage level to reliably distinguish between 0 and 1 bit values as a result of the use of charges that are dynamically stored and maintained in the capacitor-like design of those memory cells where a stored charge always decays over time and has to be repeatedly refreshed (recharged) to be maintained. The fact of this decay over time requires a higher voltage level to be used in storing the charge to provide some “extra” separation in voltage levels signifying 0 and 1 bit values so that voltage levels between partly decayed 0 and 1 bit values are still distinguishable after that partial decay has occurred. For these and related reasons, DRAM memory cells require a somewhat higher voltage level from a power source despite the fact that the size of the transistors used in the memory cells has been decreasing just as the transistors of logic circuits have. - The provision of two different portions of
memory device 190 with two different power sources affords an opportunity to save power in situations when the electronic system of whichmemory system 100 is placed in a lower power state such that accesses to store data withinmemory device 190 or retrieve data frommemory device 190 are suspended. In such a lower power state, it may be desirable to providememory device 190 with power only to the degree necessary to preserve data stored within banks 198 a-d, and this may be accomplished in some embodiments by allowing the logic level power provided via logiclevel power line 177 to be selectively turned off vialogic power control 176. In such embodiments,row address decoder 193 and refreshcontrol logic 197 may use the storage level power supplied via storagelevel power line 172 such thatrefresh control logic 197 is able to continue to initiate refresh cycles on rows within banks 198 a-d possibly selected at intervals via a counter withinrefresh control logic 197, androw address decoder 193 is able to continue selecting the rows specified byrefresh control logic 197 to be put through a refresh operation. - Depending on specific details of implementation of banks 198 a-d, the provision of storage level power to at least
row address decoder 193 may be necessary forrow address decoder 193 to properly drive word lines within banks 198 a-d with sufficient voltage levels. Likewise, the provision of other components withinmemory device 190 that are directly coupled to banks 198 a-d, such as I/O multiplexer 195, with storage level power may also be necessary, again to support signaling with sufficient voltage levels. - Supplying the same logic level power to control
logic 191 anddata buffer 196 as is supplied tomemory controller 180 permits controllogic 191 anddata buffer 196 to operate at a more efficient voltage level that does not waste electrical energy. Sharing this same lower voltage also provides the opportunity to use a lower voltage level in signaling acrossmemory bus 181 betweenmemory controller 180 andmemory device 190, and the resulting opportunity to make use of lower voltage swings to convey control, address, data and/or other signals affords the further opportunity to increase the rate at which such signals are transmitted acrossmemory bus 181, which in turn, provides the further opportunity to increase the performance ofmemory bus 181. Furthermore, sharing this same lower voltage level may also alleviate the need to design the interface withinmemory controller 180 to couplememory controller 180 tomemory bus 181 to accommodate higher voltage levels, thereby potentially simplifying the design of that interface withinmemory controller 180 and/or potentially allowing a faster interface to be more easily provided. Furthermore, the reduction in power consumed by havingmemory bus 181 and the interfaces tomemory bus 181 within bothmemory controller 180 and memory device 190 (such ascontrol logic 191 and/or data buffer 196) can become significant, especially where multiple ones ofmemory device 190 make upmemory system 100. -
FIG. 2 is a block diagram of another embodiment employing a memory system. Not unlikememory system 100 ofFIG. 1 ,memory system 200 is made up, at least in part, ofmemory controller 280 andmemory device 290 coupled together viamemory bus 281. Those skilled in the art of the design of memory systems will readily recognize thatFIG. 2 depicts one form of a relatively simple memory system, and that alternate embodiments are possible in which the exact arrangement and configuration of components may be reduced, augmented or otherwise altered without departing from the spirit and scope of the present invention as hereinafter claimed. -
Memory controller 280 controls the functions carried out bymemory device 290 as part of providing access tomemory device 290 to external devices (not shown) coupled tomemory controller 280, such as a processor, bus mastering I/O controller, etc.Memory controller 280 coordinates accesses made to memory cells withinmemory device 290 in answer to read and write commands from external devices.Memory controller 280 also coordinates various maintenance operations that must be performed to ensure that data stored withinmemory device 290 is preserved, including the initiation of regular refresh operations and the occurrence of precharge operations as needed between accesses.Memory bus 281 is made up of various control, address and data signal lines coupling togethermemory controller 280 andmemory device 290. The exact quantity and characteristics of the various signal lines making up various possible embodiments ofmemory bus 281 may be configured to be interoperable with any of a number of possible memory interfaces. In some embodiments, activity on various signal lines ofmemory bus 281 may be meant to be coordinated with a clock signal.Memory device 290 is a DRAM memory device with an interface made up ofcontrol logic 291 anddata buffer 296 configured to be interoperable withmemory bus 281. In some embodiments,memory device 290 is a single integrated circuit, and in other embodiments,memory device 290 is made up of multiple integrated circuits of a removable memory module. The memory cells ofmemory device 290 are grouped into multiple banks, such as banks 298 a-d, with each bank being organized into a two dimensional array of memory cells having rows and columns. - In various embodiments,
memory controller 280 is supplied with logic level power through logiclevel power line 274. This same logic level power is selectively supplied to a portion ofmemory device 290 throughlogic power control 276 under the control ofmemory controller 280, namely a portion encompassingcontrol logic 291,banks selection logic 292,column address decoder 294, I/O multiplexer 295 anddata buffer 296. This same logic level power is also supplied to another portion ofmemory device 290 directly from logiclevel power line 274 without interveninglogic power control 276, namely a portion encompassingrow address decoder 293 and refreshcontrol logic 297. Another portion ofmemory device 290 receives storage level power through storagelevel power line 272, namely a portion encompassing banks 298 a-d. As those skilled in the art will recognize, the exact choice of which ofcontrol logic 291,bank selection logic 292,row address decoder 293,column address decoder 294, I/O multiplexer 295,data buffer 296 and refreshcontrol logic 297 are supplied with one or the other of logic level power or storage level power, as well as the choice as to whether logic level power is selectively supplied throughlogic power control 276, or not, may depart in various embodiments from what is depicted inFIG. 2 without departing from the spirit and scope of the claimed invention. - The provision of three different portions of
memory device 290 with two different power sources, with one of the three portions being supplied one of the two power sources in a selective manner, affords an opportunity to save power in situations when the electronic system of whichmemory system 200 is placed in a lower power state where, as was the case withmemory system 200 ofFIG. 1 , it may be desirable to providememory device 290 with power only to the degree necessary to preserve data stored within banks 298 a-d. This may be accomplished in some embodiments by allowing the logic level power provided via logiclevel power line 277 to be selectively turned off to a portion ofmemory device 290 vialogic power control 276, while the same logic level power continues to be provided to another portion ofmemory device 290 vialogic power line 274. In such embodiments, banks 298 a-d continue to be supplied with storage level power to preserve the contents of the memory cells within banks 298 a-d. Furthermore,row address decoder 293 and refreshcontrol logic 297 may use logic level power supplied via logiclevel power line 274 such thatrefresh control logic 297 is able to continue to initiate refresh cycles on rows within banks 298 a-d possibly selected at intervals via a counter withinrefresh control logic 297, androw address decoder 293 is able to continue selecting the rows specified byrefresh control logic 297 to be put through a refresh operation. - Depending on specific details of implementation of banks 298 a-d, the provision of storage level power to at least
row address decoder 293 may be necessary forrow address decoder 293 to properly drive word lines within banks 298 a-d with sufficient voltage levels. Likewise, the provision of other components withinmemory device 290 that are directly coupled to banks 298 a-d, such as I/O multiplexer 295, with storage level power may also be necessary, again to support signaling with sufficient voltage levels. - In a manner not unlike
memory system 100 ofFIG. 1 , supplying the same logic level power to controllogic 291 anddata buffer 296 as is supplied tomemory controller 280 permits controllogic 291 anddata buffer 296 to operate at a more efficient voltage level that does not waste electrical energy. Sharing this same lower voltage also provides the opportunity to use a lower voltage level in signaling acrossmemory bus 281 betweenmemory controller 280 andmemory device 290, and the resulting opportunity to make use of lower voltage swings to convey control, address, data and/or other signals affords the further opportunity to increase the rate at which such signals are transmitted acrossmemory bus 281, which in turn, provides the further opportunity to increase the performance ofmemory bus 281. -
FIG. 3 is a block diagram of one embodiment employing a memory device. In various possible embodiments,memory device 390 is made up, at least in part, of memory circuits 398 a-i assembled together as ICs on a substrate (such as a circuitboard) or as dies within a multiple die package. More specifically, in some embodiments,memory device 390 is an unbuffered DIMM (dual inline memory module). Each of memory circuits 398 a-i is made up, at least in part, of memory cell arrays 399 a-i, higher power logic 397 a-i and lower power logic 396 a-i, respectively. Each of lower power logic 396 a-i is coupled tomemory bus 381, and together with corresponding ones of higher power logic 397 a-i, couples corresponding ones of memory arrays 399 a-i withinmemory device 390 to a memory controller and/or other devices (not shown) also coupled tomemory bus 381 outside ofmemory device 390. Lower power logic 396 a-i are all supplied with logic level power from logiclevel power line 377, and both higher power logic 397 a-i and memory cells 399 a-i are all supplied with storage level power from storagelevel power line 372. - Each of memory cell arrays 399 a-i is made up of numerous memory cells organized into at least a single two-dimensional array. To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 399 a-i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier. Each one of lower power logic 396 a-i, together with corresponding ones of higher power logic 397 a-i, provides the interface logic that carries out commands received from
memory bus 381 to either store data within or retrieve data from corresponding ones of memory cell arrays 399 a-i, as well as carrying out other various functions. The splitting of this interface logic between lower power and higher power logic may, in some embodiments, allow the portions of this interface logic within each of higher power logic 397 a-i that are more closely coupled to memory cell arrays 399 a-i to use the storage level power supplied via storagelevel power line 372 to interact with corresponding ones of memory cell arrays 399 a-i with signaling voltage levels that may be more easily compatible with memory cell arrays 399 a-i. At the same time, this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 396 a-i that are more closely coupled tomemory bus 381 to use the logic level power supplied via logiclevel power line 377 to interact withmemory bus 381 with signaling voltage levels that may be more easily compatible with other devices coupled tomemory bus 381. In various implementations, the voltage level of the logic level power supplied via logiclevel power line 377 is lower than the voltage level of the storage level power supplied via storagelevel power line 372 in recognition of the possible advantages of using lower voltage signaling acrossmemory bus 381, including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data acrossmemory bus 381. - Also, in some embodiments, the separation of this interface logic between lower power logic 396 a-i and higher power logic 397 a-i may allow power supplied to at least those portions of the interface logic that are more closely coupled to memory bus 381 (i.e., portions within lower power logic 396 a-i) to be powered down by turning off the logic level power supplied via logic
level power line 377 at times when some or all of the signal lines making upmemory bus 381 are powered down. At such times when logiclevel power line 377 is powered down, storagelevel power line 372 remains turned on to continue supplying storage level power to both higher power logic 397 a-i and memory cell arrays 399 a-i. Also, in some embodiments, the turning off of logic level power supplied via logiclevel power line 377 coincides withmemory device 390 being placed in a lower power state such as self-refresh mode where at least a portion of higher power logic 397 a-i uses the storage level power that continues to be supplied via storagelevel power line 372 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 399 a-i. - As those skilled in the art will recognize, the exact decision of which portions of interface logic are to make up each of lower power logic 396 a-i and which portions are to make up each of higher power logic 397 a-i may be varied between specific embodiments without departing from the spirit and scope of the claimed invention. In some embodiments, the portions of interface logic making up each of higher power logic 397 a-i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from storage
level power line 372 at times when logiclevel power line 377 is turned off as part ofmemory device 390 entering a lower power state. In other embodiments, the design of each of memory cell arrays 399 a-i may be such that any portions of interface logic directly coupled to the memory cells must be among those portions making up each of higher power logic 397 a-i. -
FIG. 4 is a block diagram of another embodiment employing a memory device, with memory device 490 being somewhat similar tomemory device 390 ofFIG. 3 . In various possible embodiments, memory device 490 is made up, at least in part, of memory circuits 498 a-i assembled together as ICs on a substrate or as dies within a multiple die package. Also, in some embodiments, memory device 490 is an unbuffered DIMM. Each of memory circuits 498 a-i is made up, at least in part, of memory cell arrays 499 a-i, unswitched power logic 497 a-i and lower power logic 496 a-i, respectively. Each of lower power logic 496 a-i is coupled tomemory bus 481, and together with corresponding ones of unswitched power logic 497 a-i, couples corresponding ones of memory arrays 499 a-i within memory device 490 to a memory controller and/or other devices (not shown) also coupled tomemory bus 481 outside ofmemory device 390. Lower power logic 496 a-i are all supplied with logic level power from logiclevel power line 477, constant power logic 497 a-i are all supplied with unswitched power fromunswitched power line 474, and memory cells 499 a-i are all supplied with storage level power from storagelevel power line 472. - Each of memory cell arrays 499 a-i is made up of numerous memory cells organized into at least a single two-dimensional array. To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 499 a-i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier. Each one of lower power logic 496 a-i, together with corresponding ones of unswitched power logic 497 a-i, provides the interface logic that carries out commands received from
memory bus 481 to either store data within or retrieve data from corresponding ones of memory cell arrays 499 a-i, as well as carrying out other various functions. The splitting of this interface logic between lower power and unswitched power logic may, in some embodiments, allow the portions of this interface logic within each of unswitched power logic 497 a-i that are more closely coupled to memory cell arrays 499 a-i to use a form of unswitched power supplied viaunswitched power line 474 having a voltage high enough to interact with corresponding ones of memory cell arrays 499 a-i with signaling voltage levels that may be more easily compatible with memory cell arrays 499 a-i. At the same time, this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 496 a-i that are more closely coupled tomemory bus 481 to use the logic level power supplied via logiclevel power line 477 to interact withmemory bus 481 with signaling voltage levels that may be more easily compatible with other devices coupled tomemory bus 481. In various implementations, the voltage level of the logic level power supplied via logiclevel power line 477 is lower than the voltage level of the storage level power supplied via storagelevel power line 472 in recognition of the possible advantages of using lower voltage signaling acrossmemory bus 481, including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data acrossmemory bus 481. - Also, in some embodiments, the separation of this interface logic between lower power logic 496 a-i and unswitched power logic 497 a-i may allow power supplied to at least those portions of the interface logic that are more closely coupled to memory bus 481 (i.e., portions within lower power logic 496 a-i) to be powered down by turning off the logic level power supplied via logic
level power line 477 at times when some or all of the signal lines making upmemory bus 481 are powered down. At such times when logiclevel power line 477 is powered down, bothunswitched power line 474 and storagelevel power line 472 remain turned on to continue supplying unswitched power and storage level power to both unswitched power logic 497 a-i and memory cell arrays 499 a-i, respectively. Also, in some embodiments, the turning off of logic level power supplied via logiclevel power line 477 coincides with memory device 490 being placed in a lower power state such as self-refresh mode where at least a portion of unswitched power logic 497 a-i uses the unswitched power that continues to be supplied viaunswitched power line 474 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 499 a-i. - In some embodiments, the voltage level of the unswitched power supplied via
unswitched power line 474 is similar to the voltage level of the logic level power supplied via logiclevel power line 477. In such embodiments, although lower power logic 496 a-i and unswitched power logic 497 a-i are supplied with power at similar voltage levels such that efficiencies of lower voltage operation of logic circuits may be realized (as described at length, above) the supplying of separate unswitched power and logic level power may be done to allow for the switching off of the logic level power, as described above, while the unswitched power at a similar voltage level continues to be supplied. In other embodiments, the voltage level of the unswitched power supplied viaunswitched power line 474 may be chosen to be somewhere between the voltage levels of the logic level power and storage level power so as to allow unswitched power logic 497 a-i to operate with signaling levels chosen to be more easily compatible with both lower power logic 496 a-i and memory cell arrays 499 a-i, respectively. - As those skilled in the art will recognize, the exact decision of which portions of interface logic are to make up each of lower power logic 496 a-i and which portions are to make up each of unswitched power logic 497 a-i may be varied between specific embodiments without departing from the spirit and scope of the claimed invention. In some embodiments, the portions of interface logic making up each of unswitched power logic 497 a-i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from
unswitched power line 474 at times when logiclevel power line 477 is turned off as part of memory device 490 entering a lower power state. -
FIG. 5 is a block diagram of still another embodiment employing a memory device, withmemory device 590 being largely identical tomemory device 390 ofFIG. 3 except for the addition ofbuffer logic 592 separating some of the signals ofmemory bus 581 from other portions ofmemory device 590, effectively creating twomemory buses memory buses memory buses memory device 590 is a registered DIMM where address and/or command signals are buffered and/or latched throughbuffer logic 592, while data signals are directly connected betweenmemory buses memory device 390 ofFIG. 3 , in various embodiments,memory device 590 is made up, at least in part, of memory circuits 598 a-i assembled together as ICs on a substrate or as dies within a multiple die package, andbuffer logic 592. Each of memory circuits 598 a-i is made up, at least in part, of memory cell arrays 599 a-i, higher power logic 597 a-i and lower power logic 596 a-i, respectively. Bothbuffer logic 592 and lower power logic 596 a-i are all supplied with logic level power from logiclevel power line 577, and both higher power logic 597 a-i and memory cells 599 a-i are all supplied with storage level power from storagelevel power line 572. - To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 599 a-i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier. Each one of lower power logic 596 a-i, together with corresponding ones of higher power logic 597 a-i, provides the interface logic that carries out commands received through
memory buses level power line 572 to interact with corresponding ones of memory cell arrays 599 a-i with signaling voltage levels that may be more easily compatible with memory cell arrays 599 a-i. At the same time, this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 596 a-i that are more closely coupled tobuffer logic 592 and/ormemory buses 581 and/or 594 to use the logic level power supplied via logiclevel power line 577 to interact withbuffer logic 592 and/ormemory buses 581 and/or 594 with signaling voltage levels that may be more easily compatible withbuffer logic 592 and/or other devices coupled tomemory bus 581 and/or 594. In various implementations, the voltage level of the logic level power supplied via logiclevel power line 577 is lower than the voltage level of the storage level power supplied via storagelevel power line 572 in recognition of the possible advantages of using lower voltage signaling withbuffer logic 592 and/or acrossmemory bus 581 and/or 594, including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data acrossmemory buses 581 and/or 594. - Also, in some embodiments, the separation of this interface logic between lower power logic 596 a-i and higher power logic 597 a-i may allow power supplied to at least those portions of the interface logic that are more closely coupled to
buffer logic 592 and/ormemory buses 581 and/or 594 (i.e., portions within lower power logic 596 a-i) to be powered down by turning off the logic level power supplied via logiclevel power line 577 at times when some or all of the signal lines making upmemory bus 581 are powered down. At such times when logiclevel power line 577 is powered down, storagelevel power line 572 remains turned on to continue supplying storage level power to both higher power logic 597 a-i and memory cell arrays 599 a-i. Also, in some embodiments, the turning off of logic level power supplied via logiclevel power line 577 coincides withmemory device 590 being placed in a lower power state such as self-refresh mode where at least a portion of higher power logic 597 a-i uses the storage level power that continues to be supplied via storagelevel power line 572 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 599 a-i. - As was the case with
memory device 390 ofFIG. 3 , those skilled in the art will recognize that the exact decision of which portions of interface logic are to make up each of lower power logic 596 a-i and which portions are to make up each of higher power logic 597 a-i may be varied between specific embodiments without departing from the spirit and scope of the claimed invention. In some embodiments, the portions of interface logic making up each of higher power logic 597 a-i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from storagelevel power line 572 at times when logiclevel power line 577 is turned off as part ofmemory device 590 entering a lower power state. In other embodiments, the design of each of memory cell arrays 599 a-i may be such that any portions of interface logic directly coupled to the memory cells must be among those portions making up each of higher power logic 597 a-i. -
FIG. 6 is a block diagram of yet another embodiment employing a memory device, withmemory device 690 being largely identical to memory device 490 ofFIG. 4 except for the addition ofbuffer logic 692 separating some of the signals ofmemory bus 681 from other portions ofmemory device 690, effectively creating twomemory buses memory buses memory buses memory device 690 is a registered DIMM where address and/or command signals are buffered and/or latched throughbuffer logic 692, while data signals are directly connected betweenmemory buses FIG. 4 , in various embodiments,memory device 690 is made up, at least in part, of memory circuits 698 a-i assembled together as ICs on a substrate or as dies within a multiple die package, andbuffer logic 692. Each of memory circuits 698 a-i is made up, at least in part, of memory cell arrays 699 a-i, unswitched power logic 697 a-i and lower power logic 696 a-i, respectively. Bothbuffer logic 692 and lower power logic 696 a-i are all supplied with logic level power from logiclevel power line 677, constant power logic 697 a-i are all supplied with unswitched power fromunswitched power line 674, and memory cells 699 a-i are all supplied with storage level power from storagelevel power line 672. - To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 699 a-i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier. Each one of lower power logic 696 a-i, together with corresponding ones of unswitched power logic 697 a-i, provides the interface logic that carries out commands received through
memory buses unswitched power line 674 having a voltage high enough to interact with corresponding ones of memory cell arrays 699 a-i with signaling voltage levels that may be more easily compatible with memory cell arrays 699 a-i. At the same time, this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 696 a-i that are more closely coupled tobuffer logic 692 and/ormemory buses 681 and/or 694 to use the logic level power supplied via logiclevel power line 677 to interact withbuffer logic 692 and/ormemory buses 681 and/or 694 with signaling voltage levels that may be more easily compatible withbuffer logic 692 and/or other devices coupled tomemory bus 681 and/or 694. In various implementations, the voltage level of the logic level power supplied via logiclevel power line 677 is lower than the voltage level of the storage level power supplied via storagelevel power line 672 in recognition of the possible advantages of using lower voltage signaling acrossmemory buses 681 and/or 694, including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data acrossmemory buses 681 and/or 694. - Also, in some embodiments, the separation of this interface logic between lower power logic 696 a-i and unswitched power logic 697 a-i may allow power supplied to at least those portions of the interface logic that are more closely coupled to
buffer logic 692 and/ormemory bus 681 and/or 694 (i.e., portions within lower power logic 696 a-i) to be powered down by turning off the logic level power supplied via logiclevel power line 677 at times when some or all of the signal lines making upmemory bus 681 are powered down. At such times when logiclevel power line 677 is powered down, bothunswitched power line 674 and storagelevel power line 672 remain turned on to continue supplying unswitched power and storage level power to both unswitched power logic 697 a-i and memory cell arrays 699 a-i, respectively. Also, in some embodiments, the turning off of logic level power supplied via logiclevel power line 677 coincides withmemory device 690 being placed in a lower power state such as self-refresh mode where at least a portion of unswitched power logic 697 a-i uses the unswitched power that continues to be supplied viaunswitched power line 674 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 699 a-i. - In some embodiments, the voltage level of the unswitched power supplied via
unswitched power line 674 is similar to the voltage level of the logic level power supplied via logiclevel power line 677. In such embodiments, although lower power logic 696 a-i and unswitched power logic 697 a-i are supplied with power at similar voltage levels such that efficiencies of lower voltage operation of logic circuits may be realized (as described at length, above) the supplying of separate unswitched power and logic level power may be done to allow for the switching off of the logic level power, as described above, while the unswitched power at a similar voltage level continues to be supplied. In other embodiments, the voltage level of the unswitched power supplied viaunswitched power line 674 may be chosen to be somewhere between the voltage levels of the logic level power and storage level power so as to allow unswitched power logic 697 a-i to operate with signaling levels chosen to be more easily compatible with both lower power logic 696 a-i and memory cell arrays 699 a-i, respectively. - As those skilled in the art will recognize, the exact decision of which portions of interface logic are to make up each of lower power logic 696 a-i and which portions are to make up each of unswitched power logic 697 a-i may be varied between specific embodiments without departing from the spirit and scope of the claimed invention. In some embodiments, the portions of interface logic making up each of unswitched power logic 697 a-i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from
unswitched power line 674 at times when logiclevel power line 677 is turned off as part ofmemory device 690 entering a lower power state. -
FIG. 7 is a block diagram of still another embodiment employing a memory device, withmemory device 790 being largely identical tomemory device 590 ofFIG. 5 except for the replacement ofbuffer logic 592 inmemory device 590 withbuffer logic 792 having a pair of point-to-point interfaces inmemory device 790. The point-to-point interfaces ofbuffer logic 792couple memory bus 794 ofmemory device 790 withmemory busses memory device 790 to be coupled to one or two other devices making up a memory system, including memory controllers and/or other memory devices. Such point-to-point interfaces may be made up of sets of unidirectional signal lines (perhaps matched sets in opposite directions) and/or at least one set of bidirectional signal lines. In various embodiments,memory device 790 is made up, at least in part, of memory circuits 798 a-i assembled together as ICs on a substrate or as dies within a multiple die package, andbuffer logic 792. In some embodiments,memory device 790 is a fully buffered DIMM. Likememory device 590 ofFIG. 5 , each of memory circuits 798 a-i is made up, at least in part, of memory cell arrays 799 a-i, higher power logic 797 a-i and lower power logic 796 a-i, respectively. Each of lower power logic 796 a-i is coupled tomemory buses buffer logic 792 andmemory bus 794 for access to at least the majority of the signal lines making upmemory buses memory buses 781 and/or 782 to which each of lower power logic 796 a-i may be directly coupled. Bothbuffer logic 792 and lower power logic 796 a-i are all supplied with logic level power from logiclevel power line 777, and both higher power logic 797 a-i and memory cells 799 a-i are all supplied with storage level power from storagelevel power line 772. - To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 799 a-i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier. Each one of lower power logic 796 a-i, together with corresponding ones of higher power logic 797 a-i, provides the interface logic that carries out commands received through
memory buses level power line 772 to interact with corresponding ones of memory cell arrays 799 a-i with signaling voltage levels that may be more easily compatible with memory cell arrays 799 a-i. At the same time, this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 796 a-i that are more closely coupled tobuffer logic 792 and/ormemory buses level power line 777 to interact withbuffer logic 792 and/ormemory buses buffer logic 792 and/or other devices coupled tomemory buses level power line 777 is lower than the voltage level of the storage level power supplied via storagelevel power line 772 in recognition of the possible advantages of using lower voltage signaling withbuffer logic 792 and/or acrossmemory buses 781 and/or 782, including lower overall power consumption and shorter signal rise and fall times leading to opportunities to increase the transfer rate of addresses, commands and/or data acrossmemory buses - Also, in some embodiments, the separation of this interface logic between lower power logic 796 a-i and higher power logic 797 a-i may allow power supplied to at least those portions of the interface logic that are more closely coupled to
buffer logic 792 and/ormemory buses level power line 777 at times when some or all of the signal lines making upmemory buses 781 and/or 782 are powered down. At such times when logiclevel power line 777 is powered down, storagelevel power line 772 remains turned on to continue supplying storage level power to both higher power logic 797 a-i and memory cell arrays 799 a-i. Also, in some embodiments, the turning off of logic level power supplied via logiclevel power line 777 coincides withmemory device 790 being placed in a lower power state such as self-refresh mode where at least a portion of higher power logic 797 a-i uses the storage level power that continues to be supplied via storagelevel power line 772 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 799 a-i. - As was the case with
memory device 590 ofFIG. 5 , those skilled in the art will recognize that the exact decision of which portions of interface logic are to make up each of lower power logic 796 a-i and which portions are to make up each of higher power logic 797 a-i may be varied between specific embodiments without departing from the spirit and scope of the claimed invention. In some embodiments, the portions of interface logic making up each of higher power logic 797 a-i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from storagelevel power line 772 at times when logiclevel power line 777 is turned off as part ofmemory device 790 entering a lower power state. In other embodiments, the design of each of memory cell arrays 799 a-i may be such that any portions of interface logic directly coupled to the memory cells must be among those portions making up each of higher power logic 797 a-i. -
FIG. 8 is a block diagram of yet another embodiment employing a memory device, withmemory device 890 being largely identical tomemory device 690 ofFIG. 6 except for the replacement ofbuffer logic 692 inmemory device 690 withbuffer logic 892 having a pair of point-to-point interfaces inmemory device 890. The point-to-point interfaces ofbuffer logic 892couple memory bus 894 ofmemory device 890 withmemory busses memory device 890 to be coupled to one or two other devices making up a memory system, including memory controllers and/or other memory devices. Such point-to-point interfaces may be made up of sets of unidirectional signal lines (perhaps matched sets in opposite directions) and/or at least one set of bidirectional signal lines. In various embodiments,memory device 890 is made up, at least in part, of memory circuits 898 a-i assembled together as ICs on a substrate or as dies within a multiple die package, andbuffer logic 892. In some embodiments,memory device 890 is a fully buffered DIMM. Likememory device 690 ofFIG. 6 , each of memory circuits 898 a-i is made up, at least in part, of memory cell arrays 899 a-i, unswitched power logic 897 a-i and lower power logic 896 a-i, respectively. Each of lower power logic 896 a-i is coupled tomemory buses buffer logic 892 andmemory bus 894 for access to at least the majority of the signal lines making upmemory buses memory buses 881 and/or 882 to which each of lower power logic 896 a-i may be directly coupled. Bothbuffer logic 892 and lower power logic 896 a-i are all supplied with logic level power from logiclevel power line 877, constant power logic 897 a-i are all supplied with unswitched power fromunswitched power line 874, and memory cells 899 a-i are all supplied with storage level power from storagelevel power line 872. - To ensure the reliable retention of the data stored in these memory cells, the storage level power supplied to each of memory cell arrays 899 a-i is of sufficient voltage to allow reliable distinguishing between 0 and 1 bit values of charges stored in memory cells of a capacitor-like configuration, as discussed at length, earlier. Each one of lower power logic 896 a-i, together with corresponding ones of unswitched power logic 897 a-i, provides the interface logic that carries out commands received through
memory buses unswitched power line 874 having a voltage high enough to interact with corresponding ones of memory cell arrays 899 a-i with signaling voltage levels that may be more easily compatible with memory cell arrays 899 a-i. At the same time, this same splitting of interface logic may, in some embodiments, allow the portions of this interface logic within each of lower power logic 896 a-i that are more closely coupled tobuffer logic 892 and/ormemory buses memory bus 894 to use the logic level power supplied via logiclevel power line 877 to interact withbuffer logic 892 and/ormemory buses buffer logic 892 and/or other devices coupled tomemory buses 881 and/or 882. In various implementations, the voltage level of the logic level power supplied via logiclevel power line 877 is lower than the voltage level of the storage level power supplied via storagelevel power line 872 in recognition of the possible advantages of using lower voltage signaling acrossmemory buses memory buses - Also, in some embodiments, the separation of this interface logic between lower power logic 896 a-i and unswitched power logic 897 a-i may allow power supplied to at least those portions of the interface logic that are more closely coupled to
buffer logic 892 and/ormemory buses level power line 877 at times when some or all of the signal lines making upmemory buses 881 and/or 882 are powered down. At such times when logiclevel power line 877 is powered down, bothunswitched power line 874 and storagelevel power line 872 remain turned on to continue supplying unswitched power and storage level power to both unswitched power logic 897 a-i and memory cell arrays 899 a-i, respectively. Also, in some embodiments, the turning off of logic level power supplied via logiclevel power line 877 coincides withmemory device 890 being placed in a lower power state such as self-refresh mode where at least a portion of unswitched power logic 897 a-i uses the unswitched power that continues to be supplied viaunswitched power line 874 to initiate and/or carry out refresh operations on portions (e.g., pages or rows of memory cells) of corresponding ones of memory cell arrays 899 a-i. - In some embodiments, the voltage level of the unswitched power supplied via
unswitched power line 874 is similar to the voltage level of the logic level power supplied via logiclevel power line 877. In such embodiments, although lower power logic 896 a-i and unswitched power logic 897 a-i are supplied with power at similar voltage levels such that efficiencies of lower voltage operation of logic circuits may be realized (as described at length, above) the supplying of separate unswitched power and logic level power may be done to allow for the switching off of the logic level power, as described above, while the unswitched power at a similar voltage level continues to be supplied. In other embodiments, the voltage level of the unswitched power supplied viaunswitched power line 874 may be chosen to be somewhere between the voltage levels of the logic level power and storage level power so as to allow unswitched power logic 897 a-i to operate with signaling levels chosen to be more easily compatible with both lower power logic 896 a-i and memory cell arrays 899 a-i, respectively. - As those skilled in the art will recognize, the exact decision of which portions of interface logic are to make up each of lower power logic 896 a-i and which portions are to make up each of unswitched power logic 897 a-i may be varied between specific embodiments without departing from the spirit and scope of the claimed invention. In some embodiments, the portions of interface logic making up each of unswitched power logic 897 a-i may be limited to logic needed to carry out refresh operations, possibly including a row address decoder, so that these limited portions of interface logic continue to be supplied with power from
unswitched power line 874 at times when logiclevel power line 877 is turned off as part ofmemory device 890 entering a lower power state. - It should be noted that as those skilled in the art of the design of memory devices, including DRAM devices, will readily recognize,
FIGS. 3 through 8 provide a relatively simple depiction of components making up a DRAM device, and that the exact arrangement and configuration of components within a DRAM device may be reduced, augmented or otherwise altered in comparison to what is depicted within those figures without departing from the spirit and scope of the present invention as hereinafter claimed. Specifically, as those skilled in the art will readily recognize, a quantity of memory circuits other than what is depicted inFIGS. 3 through 8 is certainly possible without departing from the spirit and scope of the claimed invention. Also, specifically, although embodiments specifically employing 2 and 3 power connections/sources have been depicted and discussed, it will be understood by those skilled in the art that 4 or more power connections/sources may be employed to provide power to various subparts of a memory device without departing from the spirit and scope of the claimed invention. -
FIG. 9 is a block diagram of an embodiment employing a computer system.Computer system 900 is, at least in part, made up ofprocessor 910,system logic 920, andmemory device 990.System logic 920 is coupled toprocessor 910 and performs various functions in support ofprocessor 910 including providingprocessor 910 with access tomemory device 990 to whichsystem logic 920 is also coupled, usingmemory controller 980 withinsystem logic 920.Processor 910,system logic 920 andmemory device 990 make up a form of core forcomputer system 900 that is capable of supporting the execution of machine readable instructions byprocessor 910 and the storage of data and instructions withinmemory device 990. Alternatively, in other embodiments,memory controller 980 may be either partially or entirely integrated withinprocessor 910, with the possible result ofprocessor 910 being directly coupled to and having direct access tomemory device 990. - In various embodiments,
processor 910 could be any of a variety of types of processor including a processor capable of executing at least a portion of the widely known and used “x86” instruction set, and in other various embodiments, there could be more than one processor. In various embodiments,memory device 990 could be any of a variety of types of dynamic random access memory (RAM) including fast page mode (FPM), extended data out (EDO), single data rate (SDR) or double data rate (DDR) forms of synchronous dynamic RAM (SDRAM), RAM of various technologies employing a RAMBUS™ interface, etc., andmemory controller 980 provideslogic 920 with an appropriate interface for the type of memory. At least a portion of the memory cells ofmemory device 990 are divided into banks 999 a-d, each of which are made up of memory cells organized into rows and columns in a two dimensional memory array. To access a portion of the memory cells withinmemory device 990, that portion must be addressed bymemory controller 980 with a combination of bank, row and column addresses. As those skilled in the art will recognize, the depiction of asingle memory device 990 with four banks of memory cells, namely banks 999 a-999 d, is but an example of a memory system that could be a part of a computer system, and that a larger number of memory devices and/or a differing number of banks within memory devices could be used without departing from the spirit and scope of the present invention as hereinafter claimed. - In some embodiments,
system logic 920 is coupled to and providesprocessor 910 with access tostorage device 960 by which data and/or instructions carried bystorage media 961 may be accessed.Storage media 961 may be of any of a wide variety of types and technologies as those skilled in the art will understand, including CD or DVD ROM, magnetic or optical diskette, magneto-optical disk, tape, semiconductor memory, characters or perforations on paper or other material, etc. In some embodiments,nonvolatile memory device 930 is coupled to system logic 920 (or other part of computer system 900) and provides storage for an initial series of instructions executed at a time whencomputer system 900 is either “reset” or initialized (for example, whencomputer system 900 is “turned on” or “powered up”) to perform tasks needed to preparecomputer system 900 for normal use. In some variations of such embodiments, upon initialization or resetting ofcomputer system 900,processor 910 accessesnonvolatile memory device 930 to retrieve instructions to be executed to prepare memory controller 970 for normal use in providing access forCPU 910 tomemory device 990. It may be that these same retrieved instructions are executed to preparesystem logic 920 for normal use in providing access tostorage device 960 and whatever form ofstorage media 961 that may be used bystorage device 960. - In some embodiments,
computer system 900 is further made up of power source 970 supplying logic level power throughpower line 974,power control 976 andpower line 977 to a portion ofmemory device 990, and supplying storage level power throughpower line 972 to another portion ofmemory device 990. In some variants of such embodiments,power control 976 may be operated by logic making up a portion ofmemory controller 980, and in other variants,power control 976 may be operated by another portion within a memory system making upcomputer system 900 or elsewhere withincomputer system 900, such as logic dedicated to the function of controlling the distribution of power. - In some embodiments,
storage media 961 carries machine-accessible instructions to be executed byprocessor 910 to causeprocessor 910 to carry out one or more tests ofmemory device 990 to determine what type of DRAMdevice memory device 990 may be, and/or to determine what functionsmemory device 990 may support. Such tests may include a series of attempted accesses to portions ofmemory device 990 and observation of the nature of the responses, received. Alternatively, such tests may include interrogating a code identifying the type of memory device or identifying the presence of one or more features, or such tests may entail reading data stored in a portion of nonvolatile memory withinmemory device 990 identifying the type of memory device, various parameters, and/or the presence or absence of various features. If it is determined thatmemory device 990 supports the use of a segmented power supply, as described at length above, thenprocessor 910 may be caused to program or otherwise configurememory controller 980 and/or other logic withincomputer system 900 to operatepower control 976 to make use of such a capability. - In other embodiments, a characteristic of the design of
computer system 900, such as the physical design of a connector by whichmemory device 990 is coupled to the rest ofcomputer system 900, may preclude the use of memory devices that do not support the use of a segmented power supply. In such embodiments, it may then be presumed that any memory device, such asmemory device 990, that could be connected to the rest ofcomputer system 900 would, therefore, necessarily support a segmented power system, and soprocessor 910 may be caused to execute instructions to prepare the use ofpower control 976 to selectively supply a portion ofmemory device 990 with power without having carried out a test to confirm thatmemory device 990 supports a segmented power supply. - The invention has been described in conjunction with various possible embodiments. It is evident that numerous alternatives, modifications, variations and uses will be apparent to those skilled in the art in light of the foregoing description. It will be understood by those skilled in the art that the present invention may be practiced in support of various types of electronic devices with various possible memory devices in which the memory cells repeatedly require some form of “refreshing” or other regular maintenance activity in order to prevent the loss of data. It will also be understood by those skilled in the art that the present invention may be practiced in support of electronic devices other than computer systems such as audio/video entertainment devices, controller devices in vehicles, appliances controlled by electronic circuitry, etc.
Claims (32)
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Also Published As
Publication number | Publication date |
---|---|
TWI296411B (en) | 2008-05-01 |
CN1902709B (en) | 2012-03-21 |
CN1902709A (en) | 2007-01-24 |
US7085152B2 (en) | 2006-08-01 |
EP1700311A1 (en) | 2006-09-13 |
JP2007517354A (en) | 2007-06-28 |
TW200534283A (en) | 2005-10-16 |
WO2005066968A1 (en) | 2005-07-21 |
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