US20050116064A1 - Reactors having gas distributors and methods for depositing materials onto micro-device workpieces - Google Patents
Reactors having gas distributors and methods for depositing materials onto micro-device workpieces Download PDFInfo
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- US20050116064A1 US20050116064A1 US11/010,534 US1053404A US2005116064A1 US 20050116064 A1 US20050116064 A1 US 20050116064A1 US 1053404 A US1053404 A US 1053404A US 2005116064 A1 US2005116064 A1 US 2005116064A1
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- gas
- gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Definitions
- the present invention is related to reactors having gas distributors and methods for depositing materials in thin film deposition processes used in the manufacturing of micro-devices.
- Thin film deposition techniques are widely used in the manufacturing of micro-devices to form a coating on a workpiece that closely conforms to the surface topography.
- the size of the individual components in the devices is constantly decreasing, and the number of layers in the devices is increasing.
- the density of components and the aspect ratios of depressions e.g., the ratio of the depth to the size of the opening
- the size of workpieces is also increasing to provide more real estate for forming more dies (i.e., chips) on a single workpiece.
- Many fabricators, for example are transitioning from 200 mm to 300 mm workpieces, and even larger workpieces will likely be used in the future.
- Thin film deposition techniques accordingly strive to produce highly uniform conformal layers that cover the sidewalls, bottoms, and corners in deep depressions that have very small openings.
- CVD Chemical Vapor Deposition
- one or more precursors that are capable of reacting to form a solid thin film are mixed in a gas or vapor state, and then the precursor mixture is presented to the surface of the workpiece.
- the surface of the workpiece catalyzes the reaction between the precursors to form a thin solid film at the workpiece surface.
- the most common way to catalyze the reaction at the surface of the workpiece is to heat the workpiece to a temperature that causes the reaction.
- CVD techniques are useful in many applications, they also have several drawbacks. For example, if the precursors are not highly reactive, then a high workpiece temperature is needed to achieve a reasonable deposition rate. Such high temperatures are not typically desirable because heating the workpiece can be detrimental to the structures and other materials that are already formed on the workpiece. Implanted or doped materials, for example, can migrate in the silicon substrate at higher temperatures. On the other hand, if more reactive precursors are used so that the workpiece temperature can be lower, then reactions may occur prematurely in the gas phase before reaching the substrate. This is not desirable because the film quality and uniformity may suffer, and also because it limits the types of precursors that can be used.
- One conventional system to prevent premature reactions injects the precursors into the reaction chamber through separate ports.
- each port of a shower head can be coupled to a dedicated gas line for a single gas.
- Systems that present the precursors through dedicated ports proximate to the surface of the workpiece may not sufficiently mix the precursors. Accordingly, the precursors may not react properly to form a thin solid film at the workpiece surface.
- conventional systems also have a jetting effect that produces a higher deposition rate directly below the ports. Thus, conventional CVD systems may not be appropriate for many thin film applications.
- FIGS. 1A and 1B schematically illustrate the basic operation of ALD processes.
- a layer of gas molecules A x coats the surface of a workpiece W.
- the layer of A x molecules is formed by exposing the workpiece W to a precursor gas containing A x molecules, and then purging the chamber with a purge gas to remove excess A x molecules.
- This process can form a monolayer of A x molecules on the surface of the workpiece W because the A x molecules at the surface are held in place during the purge cycle by physical adsorption forces at moderate temperatures or chemisorption forces at higher temperatures.
- the layer of A x molecules is then exposed to another precursor gas containing B y molecules.
- the A x molecules react with the B y molecules to form an extremely thin layer of solid material on the workpiece W.
- the chamber is then purged again with a purge gas to remove excess B y molecules.
- FIG. 2 illustrates the stages of one cycle for forming a thin solid layer using ALD techniques.
- a typical cycle includes (a) exposing the workpiece to the first precursor A x , (b) purging excess A x molecules, (c) exposing the workpiece to the second precursor B y , and then (d) purging excess B y molecules.
- each cycle may form a layer having a thickness of approximately 0.5-1.0 ⁇ , and thus it takes approximately 60-120 cycles to form a solid layer having a thickness of approximately 60 ⁇ .
- FIG. 3 schematically illustrates an ALD reactor 10 having a chamber 20 coupled to a gas supply 30 and a vacuum 40 .
- the reactor 10 also includes a heater 50 that supports the workpiece W and a gas dispenser 60 in the chamber 20 .
- the gas dispenser 60 includes a plenum 62 operatively coupled to the gas supply 30 and a distributor plate 70 having a plurality of holes 72 .
- the heater 50 heats the workpiece W to a desired temperature
- the gas supply 30 selectively injects the first precursor A x , the purge gas, and the second precursor B y as shown above in FIG. 2 .
- the vacuum 40 maintains a negative pressure in the chamber to draw the gases from the gas dispenser 60 across the workpiece W and then through an outlet of the chamber 20 .
- ALD processing has a relatively low throughput compared to CVD techniques. For example, ALD processing typically takes several seconds to perform each A x -purge-B y -purge cycle. This results in a total process time of several minutes to form a single thin layer of only 60-100 ⁇ . In contrast to ALD processing, CVD techniques require much less time to form similar layers.
- the low throughput of existing ALD techniques limits the utility of the technology in its current state because ALD may be a bottleneck in the overall manufacturing process. Thus, it would be useful to increase the throughput of ALD techniques so that they can be used in a wider range of applications.
- ALD processing is that it is difficult to control the uniformity of the deposited films because the holes 72 in the distributor plate 70 also cause a jetting affect that results in a higher deposition rate in-line with the holes 72 . Therefore, a need exists in semiconductor fabrication to increase the deposition uniformity in both CVD and ALD processes.
- a reactor for depositing material onto a micro-device workpiece includes a reaction chamber and a gas distributor in the reaction chamber.
- the gas distributor includes a first gas conduit having a first injector and a second gas conduit having a second injector.
- the first injector projects a first gas flow along a first vector and the second injector projects a second gas flow along a second vector that intersects the first vector in a mixing zone.
- the gas distributor can also include a mixing recess that defines the mixing zone.
- the mixing recess can have a variety of configurations, such as a conical, cubical, cylindrical, frusto-conical, pyramidical or other configurations.
- the first injector can project the first gas flow into the mixing recess along the first vector
- the second injector can project the second gas flow into the mixing recess along the second vector.
- the first and second injectors are positioned within the mixing recess.
- the mixing zone can be positioned partially within the mixing recess.
- a reactor for depositing material onto a micro-device workpiece includes a reaction chamber, a workpiece support in the reaction chamber, and a gas distributor with a mixing recess in the reaction chamber.
- the mixing recess is exposed to the workpiece support.
- the gas distributor includes a first gas conduit having a first injector and a second gas conduit having a second injector. The first injector projects a first gas flow into the mixing recess along a first vector and the second injector projects a second gas flow into the mixing recess along a second vector.
- a method includes flowing the first gas through the first injector of the gas distributor along a first vector, and flowing the second gas through the second injector of the gas distributor along a second vector. The second vector intersects the first vector in the mixing zone over the micro-device workpiece.
- a method includes flowing the first gas through the first injector of the gas distributor into the mixing recess, and flowing the second gas through the second injector of the gas distributor into the mixing recess over the micro-device workpiece.
- a method includes dispensing a first pulse of the first gas from a first outlet into a recess in the gas distributor, and dispensing a second pulse of the second gas from a second outlet into the recess in the gas distributor after terminating the first pulse of the first gas.
- FIGS. 1A and 1B are schematic cross-sectional views of stages in ALD processing in accordance with the prior art.
- FIG. 2 is a graph illustrating a cycle for forming a layer using ALD in accordance with the prior art.
- FIG. 3 is a schematic representation of a system including a reactor for depositing a material onto a microelectronic workpiece in accordance with the prior art.
- FIG. 4 is a schematic representation of a system having a reactor for depositing material onto a micro-device workpiece in accordance with one embodiment of the invention.
- FIG. 5 is a schematic representation of the gas distributor shown in FIG. 4 having a plurality of mixing recesses.
- FIG. 6 is a bottom view of one mixing recess taken substantially along the line A-A of FIG. 5 .
- FIGS. 7A-7D are schematic representations of portions of gas distributors having mixing recesses in accordance with additional embodiments of the invention.
- FIG. 8 is a schematic representation of a gas distributor in accordance with another embodiment of the invention.
- FIG. 9 is a schematic representation of a gas distributor in accordance with another embodiment of the invention.
- micro-device workpiece is used throughout to include substrates upon which and/or in which microelectronic devices, micromechanical devices, data storage elements, read/write components, and other features are fabricated.
- micro-device workpieces can be semiconductor wafers, such as silicon or gallium arsenide wafers, glass substrates, insulative substrates, and many other types of materials.
- gas is used throughout to include any form of matter that has no fixed shape and will conform in volume to the space available, which specifically includes vapors (i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature).
- vapors i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature.
- FIG. 4 is a schematic representation of a system 100 for depositing material onto a micro-device workpiece in accordance with one embodiment of the invention.
- the system 100 includes a reactor 110 having a reaction chamber 120 coupled to a gas supply 130 and a vacuum 140 .
- the reaction chamber 120 can have an inlet 122 coupled to the gas supply 130 and an outlet 124 coupled to the vacuum 140 .
- the gas supply 130 includes a plurality of gas sources 132 (identified individually as 132 a - c ), a valve assembly 133 having a plurality of valves, and a plurality of gas lines 136 and 137 .
- the gas sources 132 can include a first gas source 132 a for providing a first precursor A, a second gas source 132 b for providing a second precursor B, and a third gas source 132 c for providing a purge gas P.
- the first and second precursors A and B are the gas or vapor phase constituents that react to form the thin, solid layer on the workpiece W.
- the purge gas P can be a suitable type of gas that is compatible with the reaction chamber 120 and the workpiece W.
- the gas supply 130 can include more gas sources 132 for applications that require additional precursors or purge gases in other embodiments.
- the valve assembly 133 is operated by a controller 142 that generates signals for pulsing the individual gases through the reaction chamber 120 .
- the reactor 110 in the embodiment illustrated in FIG. 4 also includes a workpiece support 150 and a gas distributor 160 , such as a shower head, in the reaction chamber 120 .
- the workpiece support 150 is typically heated to bring the workpiece W to a desired temperature for catalyzing the reaction between the first precursor A and the second precursor B at the surface of the workpiece W.
- the workpiece support 150 is a plate with a heating element in one embodiment of the reaction chamber 120 .
- the workpiece support 150 may not be heated in other applications.
- FIG. 5 is a schematic representation of the gas distributor 160 shown in FIG. 4 having a plurality of mixing recesses 280 .
- the gas distributor 160 has a first surface 262 with mixing recesses 280 that provide zones in which gas flows can mix before flowing to the workpiece W.
- the precursors A and B can mix in the recesses 280 before flowing to the workpiece W.
- precursor A can mix in the recesses 280 during a pulse and then precursor B can mix in the recesses 280 during a subsequent pulse after alternating purge gas P pulses.
- the mixing recesses 280 can be spaced uniformly throughout the first surface 262 to provide constant volumes over the entire workpiece W.
- the mixing recesses 280 have a generally frusto-conical shape with a first wall 282 defining the side of the conical section and a second wall 284 defining the bottom of the mixing recess 280 .
- the mixing recesses 280 can have other shapes, such as those described below with reference to FIGS. 7A-7D ; in additional embodiments explained below, the gas distributor 160 may not have mixing recesses 280 , such as the embodiment described below with reference to FIG. 9 .
- the gas distributor 160 includes a plurality of first injectors 270 positioned in the first wall 282 , a plurality of second injectors 272 positioned in the first wall 282 at different locations, and a plurality of third injectors 274 positioned in the second wall 284 .
- the injectors 270 , 272 , and 274 are oriented to project gas flows into the mixing recesses 280 .
- the first injectors 270 are coupled to the first gas source 132 a by a first gas conduit 232 a.
- the first gas conduit 232 a receives the first precursor A from the gas line 137 at the inlet 122 and distributes the first precursor A throughout the gas distributor 160 to the first injectors 270 .
- the second injectors 272 are coupled to the second gas source 132 b by a second gas conduit 232 b
- the third injectors 274 are coupled to the third gas source 132 c by a third gas conduit 232 c.
- Each of the first injectors 270 is oriented to project a first gas flow into the mixing recesses 280 along a first vector V 1 at an angle ⁇ with respect to the workpiece W.
- Each of the second injectors 272 is oriented to project a second gas flow into the mixing recesses 280 along a second vector V 2 at an angle ⁇ with respect to the workpiece W.
- the second vector V 2 forms an angle ⁇ with respect to the first vector V 1 .
- the second vector V 2 is transverse (i.e., non-parallel) to the first vector V 1 .
- the second vector V 2 can be generally parallel to the first vector V 1 .
- the first vector V 1 intersects the second vector V 2 at an intersection point 292 in a mixing zone 290 located proximate to the workpiece W.
- Each of the third injectors 274 is oriented to project a third gas flow into the mixing recesses 280 along a third vector V 3 at an angle ⁇ with respect to the workpiece W.
- FIG. 6 is a bottom view of one mixing recess 280 of the gas distributor 160 taken substantially along the line A-A of FIG. 5 .
- the mixing recess 280 includes a plurality of first injectors 270 (identified individually as 270 a - c ) and a plurality of second injectors 272 (identified individually as 272 a - c ) in the first wall 282 positioned annularly around the third injector 274 .
- the first injectors 270 , the second injectors 272 , and/or the third injector 274 can be arranged in different patterns or configurations.
- the mixing recess 280 can have only one first injector 270 , one second injector 272 , and one third injector 274 , or the mixing recess can have a plurality of third injectors 274 located in the first wall 282 interspersed between the first injectors 270 and the second injectors 272 .
- some of the first injectors 270 and/or second injectors 272 can be positioned in the second wall 284 .
- the gas distributor 160 can be used in CVD processing.
- the first injectors 270 can project the first precursor A along the first vector V 1 into the mixing zones 290
- the second injectors 272 can simultaneously project the second precursor B along the second vector V 2 into the mixing zones 290 .
- the first and second precursors A and B mix together in the mixing zones 290 .
- the orientation of the first and second injectors 270 and 272 (and accordingly the first and second vectors V 1 and V 2 ) facilitates the mixing of the first and second precursors A and B by flowing the gases into each other. Consequently, a mixture of the first and second precursors A and B is presented to the workpiece W.
- the gas distributor 160 can be used in both continuous flow and pulsed CVD applications.
- a pulse of both the first precursor A and the second precursor B can be dispensed substantially simultaneously.
- the third injector 274 can dispense a pulse of purge gas P along the third vector V 3 into the mixing recesses 280 to purge excess molecules of the first and second precursors A and B.
- the process can be repeated with pulses of the first and second precursors A and B.
- the purge gas P flows continuously and pulses of the first and second precursors are injected into the continuous flow of the purge gas.
- the purge gas P for example, can flow continuously along the third vector V 3 .
- the gas distributor 160 can be used in ALD processing.
- the first injectors 270 can project the first precursor A containing molecules A x into the mixing recesses 280 .
- the orientation of the first injectors 270 in the mixing recesses 280 causes the first precursor molecules A x to mix sufficiently to form a uniform layer across the surface of the workpiece W.
- the third injector 274 can project the purge gas P to purge excess first precursor molecules A x from the mixing recesses 280 .
- This process can form a monolayer of A x molecules on the surface of the workpiece W because the A x molecules at the surface are held in .place during the purge cycle by physical adsorption forces at moderate temperatures or chemisorption forces at higher temperatures.
- the second injectors 272 can then project the second precursor B containing B y molecules into the mixing recesses 280 .
- the B y molecules also mix and form a uniform layer across the surface of the workpiece W.
- the A x molecules react with the B y molecules to form an extremely thin solid layer of material on the workpiece W.
- the mixing recesses 280 are then purged again and the process is repeated.
- the first and second injectors 270 and 272 can sequentially project the first and second precursors A and B to induce a vortex within the mixing recesses 280 in order to further increase the mixing.
- the first injector 270 a may dispense a first pulse of gas, followed by pulses from the first injector 270 b and then the first injector 270 c.
- the first injector 270 a and the second injector 272 a can dispense pulses of gas simultaneously, after which the first and second injectors 270 b and 272 b can dispense pulses simultaneously, and then the first and second injectors 270 c and 272 c can dispense pulses simultaneously. Accordingly, the first and second injectors 270 and 272 can sequentially project the first and second precursors A and B to increase mixing within the mixing recesses 280 .
- One advantage of this embodiment with respect to the CVD process is that by using dedicated injectors 270 , 272 and 274 and gas conduits 232 for each gas, the precursors A and B are kept separate, and accordingly, do not react prematurely. Furthermore, because the precursors A and B do not react prematurely, precursors that are highly reactive can be used, avoiding the need to heat the workpiece W to detrimentally high temperatures.
- Another advantage of this embodiment with respect to the ALD and CVD processes is that the enhanced mixing of the gases reduces the jetting effect and creates a uniform deposition across the surface of the workpiece W.
- a further advantage of this embodiment is that the position of the purge gas injectors 274 at the base of the mixing recesses 280 prevents the other gases from being trapped in the mixing recesses 280 .
- Another advantage of this embodiment is that the flow to each mixing recess can be independently controlled to compensate for nonuniformities on the workpiece W. For example, if the surface at the center of the workpiece W is too thick, the flow of gases from the injectors over the center of the workpiece W can be reduced.
- the chemical composition of the deposited film can be controlled precisely because the mixing at the outlets provides more precise reactions at the workpiece surface.
- FIGS. 7A-7D are scherriatic representations of portions of gas distributors having mixing recesses and injectors in accordance with additional embodiments of the invention.
- Each figure illustrates a different mixing recess and a particular arrangement of injectors; however, each arrangement of injectors can be used in conjunction with any of the mixing recesses.
- the injector arrangements with only first and second injectors such as those disclosed with reference to FIGS. 7C and 7D , can be used with any of the mixing recesses.
- FIG. 7A illustrates a gas distributor 360 having a mixing recess 380 in accordance with another embodiment of the invention.
- the mixing recess 380 has a generally cylindrical shape with a first wall 382 defining the side of the cylinder and a second wall 384 defining the bottom of the mixing recess 380 .
- the mixing recess 380 could have a different shape, such as a rectangular shape with the first wall 382 being one of the four rectangular sidewalls.
- the gas distributor 360 also includes two first injectors 270 positioned in the first wall 382 at diametrically opposed locations, two second injectors 272 (only one shown) positioned in the first wall 382 offset from the first injector 270 by 90°, and the third injector 274 positioned in the second wall 384 .
- the first injectors 270 project the first gas flow into the mixing recess 380 along first vectors V 1 generally parallel to the workpiece W (not shown), and the second injectors 272 project the second gas flow into the mixing recess 380 along second vectors V 2 generally parallel to the workpiece W and normal to the first vectors V 1 .
- the third injector 274 is oriented to project the third gas flow along the third vector V 3 into the mixing recess 380 in a direction generally normal to the workpiece W.
- FIG. 7B is a schematic representation of a portion of a gas distributor 460 having a mixing recess 480 in accordance with another embodiment of the invention.
- the mixing recess 480 has a generally cubical shape with first walls 482 a, 482 b, and 482 c defining three sides of the cube and a second wall 484 defining the bottom of the mixing recess 480 .
- the mixing recess 480 can have a different shape, such as a pyramidical shape with the first walls 482 being three sidewalls of the pyramid.
- the gas distributor 460 includes first injectors 270 positioned in the first walls 482 a and 482 c, second injectors 272 positioned in the first wall 482 b and a first wall (not shown) opposite the wall 482 b.
- the gas distributor 460 also includes a third injector 274 positioned in the second wall 484 .
- the first injectors 270 project the first gas flow along first vectors V 1 into the mixing recess 480 at the angle ⁇ with respect to the workpiece W (not shown).
- the second injectors 272 project the second gas flow along second vectors V 2 into the mixing recess 480 at an angle with respect to the workpiece W.
- the third injector 274 is oriented to project the third gas flow along the third vector V 3 into the mixing recess 480 in a direction generally normal to the workpiece W.
- FIG. 7C is a schematic representation of a portion of a gas distributor 560 having a mixing recess 580 in accordance with another embodiment of the invention.
- the mixing recess 580 has a generally hexagonal shape with first walls 582 a, 582 b, and 582 c defining sides of the hexagon and a second wall 584 defining the bottom of the mixing recess 580 .
- the gas distributor 560 includes the first injector 270 positioned in the second wall 584 and the second injector 272 positioned in the second wall 584 .
- the first injector is oriented to project the first gas flow along the vector V 1 into the mixing recess 580 at the angle ⁇ with respect to the workpiece W (not shown).
- the second injector 272 is oriented to project the second gas flow along the second vector V 2 into the mixing recess 580 at the angle ⁇ with respect to the workpiece W.
- FIG. 7D is a schematic representation of a portion of a gas distributor 660 having a mixing recess 680 in accordance with another embodiment of the invention.
- the mixing recess 680 has a generally conical shape with a first wall 682 defining the side of the cone.
- the mixing recess 680 could have a different shape, such as a pyramidical shape, with the first wall 682 being one of the sidewalls.
- the gas distributor 660 includes the first injector 270 positioned in the first wall 682 and the second injector 272 positioned in the first wall 682 opposite the first injector 270 .
- the first injector 270 is oriented to project the first gas flow along the first vector V 1 into the mixing recess 680 at the angle ⁇ with respect to the workpiece W (not shown).
- the second injector 272 is oriented to project the second gas flow along the second vector V 2 into the mixing recess 680 at the angle ⁇ with respect to the workpiece W.
- the first and second injectors 270 and 272 can be offset individually or in pairs as explained above with reference to FIG. 7A .
- FIG. 8 is a schematic representation of a gas distributor 760 in accordance with another embodiment of the invention.
- the gas distributor 760 has a first wall 764 , a second wall 766 , and a third wall 768 that at least partially define a mixing recess 780 .
- the mixing recess 780 is positioned over the workpiece W.
- the gas distributor 760 includes the first injectors 270 , the second injectors 272 , and the third injectors 274 .
- the first injectors 270 and the second injectors 272 are interspersed along the walls 764 , 766 , and 768 and are positioned to project gases into the mixing recess 780 .
- many of the injectors 270 , 272 , and 274 can be oriented at different angles with respect to the workpiece W to facilitate mixing of the gases before deposition onto the workpiece W.
- the injectors 270 , 272 , and 274 can be arranged differently, such as at different angles or positions in the walls 764 , 766 , and 768 .
- the gas distributor 760 can have different shapes or configurations, such as those illustrated in FIGS. 5-7D .
- FIG. 9 is a schematic representation of a gas distributor 860 in accordance with another embodiment of the invention.
- the gas distributor 860 has a first surface 862 from which the first injectors 270 and the second injectors 272 project the individual gas flows.
- the injectors 270 and 272 can be arranged in pairs (including one first injector 270 and one second injector 272 ) across the first surface 862 of the gas distributor 860 .
- Each first injector 270 projects the first gas along the first vector V 1 at the angle ⁇ with respect to the workpiece W.
- each second projector 272 projects the second gas along the second vector V 2 at the angle ⁇ with respect to the workpiece W.
- the first and second gases mix in a mixing zone 890 above the workpiece W.
- pairs of first injectors 270 can inject a single gas flow along the first and second vectors V 1 and V 2
- pairs of second injectors 272 can inject another individual gas flow along the first and second vectors V 1 and V 2 in a different mixing zone.
Abstract
Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing material on a micro-device workpiece includes a reaction chamber and a gas distributor in the reaction chamber. The gas distributor includes a first gas conduit having a first injector and a second gas conduit having a second injector. The first injector projects a first gas flow along a first vector and the second injector projects a second gas flow along a second vector that intersects the first vector in an external mixing zone facing the workpiece. In another embodiment, the mixing zone is an external mixing recess on a surface of the gas distributor that faces the workpiece.
Description
- The present invention is related to reactors having gas distributors and methods for depositing materials in thin film deposition processes used in the manufacturing of micro-devices.
- Thin film deposition techniques are widely used in the manufacturing of micro-devices to form a coating on a workpiece that closely conforms to the surface topography. The size of the individual components in the devices is constantly decreasing, and the number of layers in the devices is increasing. As a result, the density of components and the aspect ratios of depressions (e.g., the ratio of the depth to the size of the opening) are increasing. The size of workpieces is also increasing to provide more real estate for forming more dies (i.e., chips) on a single workpiece. Many fabricators, for example, are transitioning from 200 mm to 300 mm workpieces, and even larger workpieces will likely be used in the future. Thin film deposition techniques accordingly strive to produce highly uniform conformal layers that cover the sidewalls, bottoms, and corners in deep depressions that have very small openings.
- One widely used thin film deposition technique is Chemical Vapor Deposition (CVD). In a CVD system, one or more precursors that are capable of reacting to form a solid thin film are mixed in a gas or vapor state, and then the precursor mixture is presented to the surface of the workpiece. The surface of the workpiece catalyzes the reaction between the precursors to form a thin solid film at the workpiece surface. The most common way to catalyze the reaction at the surface of the workpiece is to heat the workpiece to a temperature that causes the reaction.
- Although CVD techniques are useful in many applications, they also have several drawbacks. For example, if the precursors are not highly reactive, then a high workpiece temperature is needed to achieve a reasonable deposition rate. Such high temperatures are not typically desirable because heating the workpiece can be detrimental to the structures and other materials that are already formed on the workpiece. Implanted or doped materials, for example, can migrate in the silicon substrate at higher temperatures. On the other hand, if more reactive precursors are used so that the workpiece temperature can be lower, then reactions may occur prematurely in the gas phase before reaching the substrate. This is not desirable because the film quality and uniformity may suffer, and also because it limits the types of precursors that can be used.
- One conventional system to prevent premature reactions injects the precursors into the reaction chamber through separate ports. For example, each port of a shower head can be coupled to a dedicated gas line for a single gas. Systems that present the precursors through dedicated ports proximate to the surface of the workpiece, however, may not sufficiently mix the precursors. Accordingly, the precursors may not react properly to form a thin solid film at the workpiece surface. Furthermore, conventional systems also have a jetting effect that produces a higher deposition rate directly below the ports. Thus, conventional CVD systems may not be appropriate for many thin film applications.
- Atomic Layer Deposition (ALD) is another thin film deposition technique.
FIGS. 1A and 1B schematically illustrate the basic operation of ALD processes. Referring toFIG. 1A , a layer of gas molecules Ax coats the surface of a workpiece W. The layer of Ax molecules is formed by exposing the workpiece W to a precursor gas containing Ax molecules, and then purging the chamber with a purge gas to remove excess Ax molecules. This process can form a monolayer of Ax molecules on the surface of the workpiece W because the Ax molecules at the surface are held in place during the purge cycle by physical adsorption forces at moderate temperatures or chemisorption forces at higher temperatures. The layer of Ax molecules is then exposed to another precursor gas containing By molecules. The Ax molecules react with the By molecules to form an extremely thin layer of solid material on the workpiece W. The chamber is then purged again with a purge gas to remove excess By molecules. -
FIG. 2 illustrates the stages of one cycle for forming a thin solid layer using ALD techniques. A typical cycle includes (a) exposing the workpiece to the first precursor Ax, (b) purging excess Ax molecules, (c) exposing the workpiece to the second precursor By, and then (d) purging excess By molecules. In actual processing several cycles are repeated to build a thin film on a workpiece having the desired thickness. For example, each cycle may form a layer having a thickness of approximately 0.5-1.0 Å, and thus it takes approximately 60-120 cycles to form a solid layer having a thickness of approximately 60 Å. -
FIG. 3 schematically illustrates anALD reactor 10 having achamber 20 coupled to agas supply 30 and avacuum 40. Thereactor 10 also includes aheater 50 that supports the workpiece W and agas dispenser 60 in thechamber 20. Thegas dispenser 60 includes aplenum 62 operatively coupled to thegas supply 30 and adistributor plate 70 having a plurality ofholes 72. In operation, theheater 50 heats the workpiece W to a desired temperature, and thegas supply 30 selectively injects the first precursor Ax, the purge gas, and the second precursor By as shown above inFIG. 2 . Thevacuum 40 maintains a negative pressure in the chamber to draw the gases from thegas dispenser 60 across the workpiece W and then through an outlet of thechamber 20. - One drawback of ALD processing is that it has a relatively low throughput compared to CVD techniques. For example, ALD processing typically takes several seconds to perform each Ax-purge-By-purge cycle. This results in a total process time of several minutes to form a single thin layer of only 60-100 Å. In contrast to ALD processing, CVD techniques require much less time to form similar layers. The low throughput of existing ALD techniques limits the utility of the technology in its current state because ALD may be a bottleneck in the overall manufacturing process. Thus, it would be useful to increase the throughput of ALD techniques so that they can be used in a wider range of applications. Another drawback of ALD processing is that it is difficult to control the uniformity of the deposited films because the
holes 72 in thedistributor plate 70 also cause a jetting affect that results in a higher deposition rate in-line with theholes 72. Therefore, a need exists in semiconductor fabrication to increase the deposition uniformity in both CVD and ALD processes. - The present invention is directed toward reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reaction chamber and a gas distributor in the reaction chamber. The gas distributor includes a first gas conduit having a first injector and a second gas conduit having a second injector. In one aspect of this embodiment, the first injector projects a first gas flow along a first vector and the second injector projects a second gas flow along a second vector that intersects the first vector in a mixing zone. In another aspect of this embodiment, the gas distributor can also include a mixing recess that defines the mixing zone. The mixing recess can have a variety of configurations, such as a conical, cubical, cylindrical, frusto-conical, pyramidical or other configurations. The first injector can project the first gas flow into the mixing recess along the first vector, and the second injector can project the second gas flow into the mixing recess along the second vector. In a further aspect of this embodiment, the first and second injectors are positioned within the mixing recess. The mixing zone can be positioned partially within the mixing recess.
- In another embodiment, a reactor for depositing material onto a micro-device workpiece includes a reaction chamber, a workpiece support in the reaction chamber, and a gas distributor with a mixing recess in the reaction chamber. The mixing recess is exposed to the workpiece support. The gas distributor includes a first gas conduit having a first injector and a second gas conduit having a second injector. The first injector projects a first gas flow into the mixing recess along a first vector and the second injector projects a second gas flow into the mixing recess along a second vector.
- These reactors can be used to perform several methods for depositing materials onto micro-device workpieces. In one embodiment, a method includes flowing the first gas through the first injector of the gas distributor along a first vector, and flowing the second gas through the second injector of the gas distributor along a second vector. The second vector intersects the first vector in the mixing zone over the micro-device workpiece. In another embodiment, a method includes flowing the first gas through the first injector of the gas distributor into the mixing recess, and flowing the second gas through the second injector of the gas distributor into the mixing recess over the micro-device workpiece. In a further embodiment, a method includes dispensing a first pulse of the first gas from a first outlet into a recess in the gas distributor, and dispensing a second pulse of the second gas from a second outlet into the recess in the gas distributor after terminating the first pulse of the first gas.
-
FIGS. 1A and 1B are schematic cross-sectional views of stages in ALD processing in accordance with the prior art. -
FIG. 2 is a graph illustrating a cycle for forming a layer using ALD in accordance with the prior art. -
FIG. 3 is a schematic representation of a system including a reactor for depositing a material onto a microelectronic workpiece in accordance with the prior art. -
FIG. 4 is a schematic representation of a system having a reactor for depositing material onto a micro-device workpiece in accordance with one embodiment of the invention. -
FIG. 5 is a schematic representation of the gas distributor shown inFIG. 4 having a plurality of mixing recesses. -
FIG. 6 is a bottom view of one mixing recess taken substantially along the line A-A ofFIG. 5 . -
FIGS. 7A-7D are schematic representations of portions of gas distributors having mixing recesses in accordance with additional embodiments of the invention. -
FIG. 8 is a schematic representation of a gas distributor in accordance with another embodiment of the invention. -
FIG. 9 is a schematic representation of a gas distributor in accordance with another embodiment of the invention. - The following disclosure describes several embodiments of reactors having gas distributors for depositing material onto micro-device workpieces, systems including such reactors, and methods for depositing materials onto micro-device workpieces. Many specific details of the invention are described below with reference to depositing materials onto micro-device workpieces. The term “micro-device workpiece” is used throughout to include substrates upon which and/or in which microelectronic devices, micromechanical devices, data storage elements, read/write components, and other features are fabricated. For example, micro-device workpieces can be semiconductor wafers, such as silicon or gallium arsenide wafers, glass substrates, insulative substrates, and many other types of materials. The term “gas” is used throughout to include any form of matter that has no fixed shape and will conform in volume to the space available, which specifically includes vapors (i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature). Several embodiments in accordance with the invention are set forth in
FIGS. 4-9 and the following text to provide a thorough understanding of particular embodiments of the invention. A person skilled in the art will understand, however, that the invention may have additional embodiments, or that the invention may be practiced without several of the details of the embodiments shown inFIGS. 4-9 . - A. Deposition Systems
-
FIG. 4 is a schematic representation of asystem 100 for depositing material onto a micro-device workpiece in accordance with one embodiment of the invention. In this embodiment, thesystem 100 includes areactor 110 having areaction chamber 120 coupled to agas supply 130 and avacuum 140. For example, thereaction chamber 120 can have aninlet 122 coupled to thegas supply 130 and anoutlet 124 coupled to thevacuum 140. - The
gas supply 130 includes a plurality of gas sources 132 (identified individually as 132 a-c), avalve assembly 133 having a plurality of valves, and a plurality ofgas lines first gas source 132 a for providing a first precursor A, asecond gas source 132 b for providing a second precursor B, and athird gas source 132 c for providing a purge gas P. The first and second precursors A and B are the gas or vapor phase constituents that react to form the thin, solid layer on the workpiece W. The purge gas P can be a suitable type of gas that is compatible with thereaction chamber 120 and the workpiece W. Thegas supply 130 can include more gas sources 132 for applications that require additional precursors or purge gases in other embodiments. Thevalve assembly 133 is operated by acontroller 142 that generates signals for pulsing the individual gases through thereaction chamber 120. - The
reactor 110 in the embodiment illustrated inFIG. 4 also includes aworkpiece support 150 and agas distributor 160, such as a shower head, in thereaction chamber 120. Theworkpiece support 150 is typically heated to bring the workpiece W to a desired temperature for catalyzing the reaction between the first precursor A and the second precursor B at the surface of the workpiece W. Theworkpiece support 150 is a plate with a heating element in one embodiment of thereaction chamber 120. Theworkpiece support 150, however, may not be heated in other applications. - B. Gas Distributors
-
FIG. 5 is a schematic representation of thegas distributor 160 shown inFIG. 4 having a plurality of mixing recesses 280. In this embodiment, thegas distributor 160 has afirst surface 262 with mixingrecesses 280 that provide zones in which gas flows can mix before flowing to the workpiece W. In CVD applications, the precursors A and B can mix in therecesses 280 before flowing to the workpiece W. In ALD applications, precursor A can mix in therecesses 280 during a pulse and then precursor B can mix in therecesses 280 during a subsequent pulse after alternating purge gas P pulses. The mixing recesses 280 can be spaced uniformly throughout thefirst surface 262 to provide constant volumes over the entire workpiece W. In this embodiment, the mixing recesses 280 have a generally frusto-conical shape with afirst wall 282 defining the side of the conical section and asecond wall 284 defining the bottom of themixing recess 280. In other embodiments explained below, the mixing recesses 280 can have other shapes, such as those described below with reference toFIGS. 7A-7D ; in additional embodiments explained below, thegas distributor 160 may not have mixingrecesses 280, such as the embodiment described below with reference toFIG. 9 . - In the embodiment illustrated in
FIG. 5 , thegas distributor 160 includes a plurality offirst injectors 270 positioned in thefirst wall 282, a plurality ofsecond injectors 272 positioned in thefirst wall 282 at different locations, and a plurality ofthird injectors 274 positioned in thesecond wall 284. Theinjectors first injectors 270 are coupled to thefirst gas source 132 a by afirst gas conduit 232 a. Thefirst gas conduit 232 a receives the first precursor A from thegas line 137 at theinlet 122 and distributes the first precursor A throughout thegas distributor 160 to thefirst injectors 270. Similarly, thesecond injectors 272 are coupled to thesecond gas source 132 b by asecond gas conduit 232 b, and thethird injectors 274 are coupled to thethird gas source 132 c by athird gas conduit 232 c. - Each of the
first injectors 270 is oriented to project a first gas flow into the mixing recesses 280 along a first vector V1 at an angle σ with respect to the workpiece W. Each of thesecond injectors 272 is oriented to project a second gas flow into the mixing recesses 280 along a second vector V2 at an angle α with respect to the workpiece W. The second vector V2 forms an angle β with respect to the first vector V1. In the illustrated embodiment, the second vector V2 is transverse (i.e., non-parallel) to the first vector V1. In other embodiments, such as the embodiment described below with reference toFIG. 7A , the second vector V2 can be generally parallel to the first vector V1. The first vector V1 intersects the second vector V2 at anintersection point 292 in amixing zone 290 located proximate to the workpiece W. Each of thethird injectors 274 is oriented to project a third gas flow into the mixing recesses 280 along a third vector V3 at an angle θ with respect to the workpiece W. -
FIG. 6 is a bottom view of onemixing recess 280 of thegas distributor 160 taken substantially along the line A-A ofFIG. 5 . In the illustrated embodiment, the mixingrecess 280 includes a plurality of first injectors 270 (identified individually as 270 a-c) and a plurality of second injectors 272 (identified individually as 272 a-c) in thefirst wall 282 positioned annularly around thethird injector 274. In other embodiments, thefirst injectors 270, thesecond injectors 272, and/or thethird injector 274 can be arranged in different patterns or configurations. For example, the mixingrecess 280 can have only onefirst injector 270, onesecond injector 272, and onethird injector 274, or the mixing recess can have a plurality ofthird injectors 274 located in thefirst wall 282 interspersed between thefirst injectors 270 and thesecond injectors 272. In further embodiments, some of thefirst injectors 270 and/orsecond injectors 272 can be positioned in thesecond wall 284. - C. Methods for Depositing Material on Micro-Device Workpieces
- Referring to
FIG. 5 , in one aspect of the embodiment, thegas distributor 160 can be used in CVD processing. For example, thefirst injectors 270 can project the first precursor A along the first vector V1 into the mixingzones 290, and thesecond injectors 272 can simultaneously project the second precursor B along the second vector V2 into the mixingzones 290. Accordingly, the first and second precursors A and B mix together in themixing zones 290. The orientation of the first andsecond injectors 270 and 272 (and accordingly the first and second vectors V1 and V2) facilitates the mixing of the first and second precursors A and B by flowing the gases into each other. Consequently, a mixture of the first and second precursors A and B is presented to the workpiece W. - In a further aspect of this embodiment, the
gas distributor 160 can be used in both continuous flow and pulsed CVD applications. In a pulsed CVD application, a pulse of both the first precursor A and the second precursor B can be dispensed substantially simultaneously. After a pulse of the first and second precursors A and B, thethird injector 274 can dispense a pulse of purge gas P along the third vector V3 into the mixing recesses 280 to purge excess molecules of the first and second precursors A and B. After purging, the process can be repeated with pulses of the first and second precursors A and B. In another pulsed CVD application, the purge gas P flows continuously and pulses of the first and second precursors are injected into the continuous flow of the purge gas. The purge gas P, for example, can flow continuously along the third vector V3. - In another aspect of this embodiment, the
gas distributor 160 can be used in ALD processing. For example, thefirst injectors 270 can project the first precursor A containing molecules Ax into the mixing recesses 280. In the illustrative embodiment, the orientation of thefirst injectors 270 in the mixing recesses 280 causes the first precursor molecules Ax to mix sufficiently to form a uniform layer across the surface of the workpiece W. Next, thethird injector 274 can project the purge gas P to purge excess first precursor molecules Ax from the mixing recesses 280. This process can form a monolayer of Ax molecules on the surface of the workpiece W because the Ax molecules at the surface are held in .place during the purge cycle by physical adsorption forces at moderate temperatures or chemisorption forces at higher temperatures. Thesecond injectors 272 can then project the second precursor B containing By molecules into the mixing recesses 280. The By molecules also mix and form a uniform layer across the surface of the workpiece W. The Ax molecules react with the By molecules to form an extremely thin solid layer of material on the workpiece W. The mixing recesses 280 are then purged again and the process is repeated. - In a further aspect of this embodiment, the first and
second injectors FIG. 6 , thefirst injector 270 a may dispense a first pulse of gas, followed by pulses from thefirst injector 270 b and then thefirst injector 270 c. In another aspect of this embodiment, thefirst injector 270 a and thesecond injector 272 a can dispense pulses of gas simultaneously, after which the first andsecond injectors second injectors second injectors - One advantage of this embodiment with respect to the CVD process is that by using
dedicated injectors purge gas injectors 274 at the base of the mixing recesses 280 prevents the other gases from being trapped in the mixing recesses 280. Another advantage of this embodiment is that the flow to each mixing recess can be independently controlled to compensate for nonuniformities on the workpiece W. For example, if the surface at the center of the workpiece W is too thick, the flow of gases from the injectors over the center of the workpiece W can be reduced. Still another advantage is that the chemical composition of the deposited film can be controlled precisely because the mixing at the outlets provides more precise reactions at the workpiece surface. - D. Other Gas Distributors
-
FIGS. 7A-7D are scherriatic representations of portions of gas distributors having mixing recesses and injectors in accordance with additional embodiments of the invention. Each figure illustrates a different mixing recess and a particular arrangement of injectors; however, each arrangement of injectors can be used in conjunction with any of the mixing recesses. For example, the injector arrangements with only first and second injectors, such as those disclosed with reference toFIGS. 7C and 7D , can be used with any of the mixing recesses. -
FIG. 7A illustrates agas distributor 360 having a mixingrecess 380 in accordance with another embodiment of the invention. The mixingrecess 380 has a generally cylindrical shape with afirst wall 382 defining the side of the cylinder and asecond wall 384 defining the bottom of themixing recess 380. In another embodiment, the mixingrecess 380 could have a different shape, such as a rectangular shape with thefirst wall 382 being one of the four rectangular sidewalls. In the illustrated embodiment, thegas distributor 360 also includes twofirst injectors 270 positioned in thefirst wall 382 at diametrically opposed locations, two second injectors 272 (only one shown) positioned in thefirst wall 382 offset from thefirst injector 270 by 90°, and thethird injector 274 positioned in thesecond wall 384. Thefirst injectors 270 project the first gas flow into the mixingrecess 380 along first vectors V1 generally parallel to the workpiece W (not shown), and thesecond injectors 272 project the second gas flow into the mixingrecess 380 along second vectors V2 generally parallel to the workpiece W and normal to the first vectors V1. Thethird injector 274 is oriented to project the third gas flow along the third vector V3 into the mixingrecess 380 in a direction generally normal to the workpiece W. -
FIG. 7B is a schematic representation of a portion of agas distributor 460 having a mixingrecess 480 in accordance with another embodiment of the invention. The mixingrecess 480 has a generally cubical shape withfirst walls second wall 484 defining the bottom of themixing recess 480. In another embodiment, the mixingrecess 480 can have a different shape, such as a pyramidical shape with the first walls 482 being three sidewalls of the pyramid. In the illustrated embodiment, thegas distributor 460 includesfirst injectors 270 positioned in thefirst walls second injectors 272 positioned in thefirst wall 482 b and a first wall (not shown) opposite thewall 482 b. Thegas distributor 460 also includes athird injector 274 positioned in thesecond wall 484. Thefirst injectors 270 project the first gas flow along first vectors V1 into the mixingrecess 480 at the angle σ with respect to the workpiece W (not shown). Thesecond injectors 272 project the second gas flow along second vectors V2 into the mixingrecess 480 at an angle with respect to the workpiece W. Thethird injector 274 is oriented to project the third gas flow along the third vector V3 into the mixingrecess 480 in a direction generally normal to the workpiece W. -
FIG. 7C is a schematic representation of a portion of agas distributor 560 having a mixingrecess 580 in accordance with another embodiment of the invention. The mixingrecess 580 has a generally hexagonal shape withfirst walls second wall 584 defining the bottom of themixing recess 580. Thegas distributor 560 includes thefirst injector 270 positioned in thesecond wall 584 and thesecond injector 272 positioned in thesecond wall 584. The first injector is oriented to project the first gas flow along the vector V1 into the mixingrecess 580 at the angle σ with respect to the workpiece W (not shown). Thesecond injector 272 is oriented to project the second gas flow along the second vector V2 into the mixingrecess 580 at the angle α with respect to the workpiece W. -
FIG. 7D is a schematic representation of a portion of agas distributor 660 having a mixingrecess 680 in accordance with another embodiment of the invention. The mixingrecess 680 has a generally conical shape with afirst wall 682 defining the side of the cone. In another embodiment, the mixingrecess 680 could have a different shape, such as a pyramidical shape, with thefirst wall 682 being one of the sidewalls. In the illustrated embodiment, thegas distributor 660 includes thefirst injector 270 positioned in thefirst wall 682 and thesecond injector 272 positioned in thefirst wall 682 opposite thefirst injector 270. Thefirst injector 270 is oriented to project the first gas flow along the first vector V1 into the mixingrecess 680 at the angle σ with respect to the workpiece W (not shown). Thesecond injector 272 is oriented to project the second gas flow along the second vector V2 into the mixingrecess 680 at the angle α with respect to the workpiece W. In other embodiments, the first andsecond injectors FIG. 7A . -
FIG. 8 is a schematic representation of agas distributor 760 in accordance with another embodiment of the invention. Thegas distributor 760 has afirst wall 764, asecond wall 766, and athird wall 768 that at least partially define amixing recess 780. The mixingrecess 780 is positioned over the workpiece W. Thegas distributor 760 includes thefirst injectors 270, thesecond injectors 272, and thethird injectors 274. Thefirst injectors 270 and thesecond injectors 272 are interspersed along thewalls recess 780. In the illustrated embodiment, many of theinjectors injectors walls gas distributor 760 can have different shapes or configurations, such as those illustrated inFIGS. 5-7D . -
FIG. 9 is a schematic representation of agas distributor 860 in accordance with another embodiment of the invention. Thegas distributor 860 has afirst surface 862 from which thefirst injectors 270 and thesecond injectors 272 project the individual gas flows. Theinjectors first injector 270 and one second injector 272) across thefirst surface 862 of thegas distributor 860. Eachfirst injector 270 projects the first gas along the first vector V1 at the angle σ with respect to the workpiece W. Similarly, eachsecond projector 272 projects the second gas along the second vector V2 at the angle α with respect to the workpiece W. The first and second gases mix in amixing zone 890 above the workpiece W. In other embodiments, pairs offirst injectors 270 can inject a single gas flow along the first and second vectors V1 and V2, and pairs ofsecond injectors 272 can inject another individual gas flow along the first and second vectors V1 and V2 in a different mixing zone. - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
Claims (24)
1-54. (canceled)
55. A method for depositing material onto a micro-device workpiece in a reaction chamber, comprising:
passing a first gas flow through a first injector of a gas distributor along a first vector; and
passing a second gas flow through a second injector of the gas distributor along a second vector that intersects with the first vector in a mixing zone exposed to and over the micro-device workpiece.
56. The method of claim 55 , further comprising mixing the first gas flow and the second gas flow in the mixing zone.
57. The method of claim 55 wherein passing a first gas flow and passing a second gas flow occur at least partially simultaneously.
58. The method of claim 55 wherein passing a second gas flow occurs after terminating passing the first gas flow.
59. The method of claim 55 , further comprising passing a third gas flow through a third injector of the gas distributor.
60. The method of claim 55 wherein the first and second gas flows comprise the same gas.
61. The method of claim 55 wherein the first gas flow comprises a first precursor and the second gas flow comprises a second precursor, and wherein passing the first gas flow and passing the second gas flow occur at least substantially simultaneously.
62. The method of claim 55 , further comprising:
passing a third gas flow through a third injector of the gas distributor; and
wherein passing the first gas flow comprises passing a first precursor through the first injector and then terminating the first gas flow, wherein passing the third gas flow comprises passing a purge gas through the third injector after terminating the first gas flow and then terminating the third gas flow, and wherein passing the second gas flow comprises passing a second precursor through the second injector after terminating the third gas flow.
63. The method of claim 55 , further comprising:
passing a third gas flow through a third injector of the gas distributor; and
wherein passing the first gas flow comprises passing a first precursor, wherein passing the second gas flow comprises passing a second precursor at least substantially simultaneously with passing the first gas flow, and wherein passing the third gas flow comprises passing a purge gas after terminating the first and second gas flows.
64. The method of claim 55 wherein passing the first gas flow and passing the second gas flow comprise creating a vortex in the mixing zone of the first and second gas flows.
65. A method for depositing material onto a micro-device workpiece in a reaction chamber, comprising:
flowing a first gas flow through a first injector of a gas distributor into an external mixing recess in the gas distributor; and
flowing a second gas flow through a second injector of the gas distributor into the external mixing recess over the micro-device workpiece.
66. The method of claim 65 , further comprising mixing the first gas flow and the second gas flow in the mixing zone.
67. The method of claim 65 wherein flowing the first gas flow and flowing the second gas flow occur at least partially simultaneously.
68. The method of claim 65 wherein flowing the second gas flow occurs after terminating flowing the first gas flow.
69. The method of claim 65 , further comprising flowing a third gas flow through a third injector of the gas distributor.
70. The method of claim 65 wherein flowing the first gas flow comprises flowing the first gas flow along a first vector, and flowing the second gas flow comprises flowing the second gas flow along a second vector transverse to the first vector.
71. The method of claim 65 wherein flowing the first gas flow comprises flowing the first gas flow along a first vector, and flowing the second gas flow comprises flowing the second gas flow along a second vector generally parallel to the first vector.
72. The method of claim 65 , further comprising creating a vortex in the mixing recess with the first and second gas flows.
73. A method for depositing material onto a micro-device workpiece in a reaction chamber having a gas distributor, comprising:
dispensing a pulse of a first gas from a first outlet in the gas distributor into an external recess in the gas distributor; and
dispensing a pulse of a second gas from a second outlet in the gas distributor into the external recess in the gas distributor after terminating the pulse of the first gas.
74. The method of claim 73 , further comprising mixing the first gas and the second gas on a surface of the workpiece.
75. The method of claim 73 , further comprising dispensing a pulse of a purge gas through a third outlet into the recess of the gas distributor between the pulse of the first gas and the pulse of the second gas.
76. The method of claim 73 wherein dispensing the pulse of the first gas comprises dispensing the first gas along a first vector, and dispensing the pulse of the second gas comprises dispensing the second gas along a second vector transverse to the first vector.
77. The method of claim 73 wherein the dispensing procedures are repeated in serial order creating a vortex within the external recess in the gas distributor.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026374A1 (en) * | 2002-08-06 | 2004-02-12 | Tue Nguyen | Assembly line processing method |
US20090324829A1 (en) * | 2006-04-05 | 2009-12-31 | Dalton Jeremie J | Method and apparatus for providing uniform gas delivery to a reactor |
Families Citing this family (326)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6670071B2 (en) * | 2002-01-15 | 2003-12-30 | Quallion Llc | Electric storage battery construction and method of manufacture |
US20070243317A1 (en) * | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
US6884296B2 (en) * | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
US7344755B2 (en) * | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7323231B2 (en) * | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
JP4306403B2 (en) * | 2003-10-23 | 2009-08-05 | 東京エレクトロン株式会社 | Shower head structure and film forming apparatus using the same |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7472432B2 (en) * | 2003-12-30 | 2009-01-06 | Letty Ann Owen | Bathtub insert “Take-Five” |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
JP4707959B2 (en) * | 2004-02-20 | 2011-06-22 | 日本エー・エス・エム株式会社 | Shower plate, plasma processing apparatus and plasma processing method |
US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
EP1771598B1 (en) * | 2004-06-28 | 2009-09-30 | Cambridge Nanotech Inc. | Atomic layer deposition (ald) system and method |
KR20060014495A (en) * | 2004-08-11 | 2006-02-16 | 주식회사 유진테크 | Shower head of chemical vapor deposition apparatus |
US7722719B2 (en) * | 2005-03-07 | 2010-05-25 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US8088223B2 (en) * | 2005-03-10 | 2012-01-03 | Asm America, Inc. | System for control of gas injectors |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
US20070227659A1 (en) * | 2006-03-31 | 2007-10-04 | Tokyo Electron Limited | Plasma etching apparatus |
US20080260967A1 (en) * | 2007-04-17 | 2008-10-23 | Hyungsuk Alexander Yoon | Apparatus and method for integrated surface treatment and film deposition |
US20080124944A1 (en) * | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US7758698B2 (en) * | 2006-11-28 | 2010-07-20 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US7740706B2 (en) * | 2006-11-28 | 2010-06-22 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
US20080121177A1 (en) * | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US8011317B2 (en) * | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
US8287647B2 (en) * | 2007-04-17 | 2012-10-16 | Lam Research Corporation | Apparatus and method for atomic layer deposition |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US20090095221A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US8067061B2 (en) * | 2007-10-25 | 2011-11-29 | Asm America, Inc. | Reaction apparatus having multiple adjustable exhaust ports |
US20090236447A1 (en) * | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Method and apparatus for controlling gas injection in process chamber |
US9493875B2 (en) * | 2008-09-30 | 2016-11-15 | Eugene Technology Co., Ltd. | Shower head unit and chemical vapor deposition apparatus |
US8931431B2 (en) | 2009-03-25 | 2015-01-13 | The Regents Of The University Of Michigan | Nozzle geometry for organic vapor jet printing |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8486191B2 (en) * | 2009-04-07 | 2013-07-16 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
TWI385272B (en) * | 2009-09-25 | 2013-02-11 | Ind Tech Res Inst | Gas distribution plate and apparatus using the same |
JP2013522472A (en) * | 2010-03-19 | 2013-06-13 | ジーティーエイティー・コーポレーション | System and method for polycrystalline silicon deposition |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
US20110265883A1 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control |
WO2011159690A2 (en) * | 2010-06-15 | 2011-12-22 | Applied Materials, Inc. | Multiple precursor showerhead with by-pass ports |
TWI534291B (en) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | Showerhead assembly |
JP5815967B2 (en) * | 2011-03-31 | 2015-11-17 | 東京エレクトロン株式会社 | Substrate cleaning apparatus and vacuum processing system |
KR101311983B1 (en) * | 2011-03-31 | 2013-09-30 | 엘아이지에이디피 주식회사 | Gas injection apparatus, atomic layer deposition apparatus and the method of atomic layer deposition using the same |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US8617350B2 (en) * | 2011-06-15 | 2013-12-31 | Belight Technology Corporation, Limited | Linear plasma system |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9574268B1 (en) * | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9388492B2 (en) | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
JP5793103B2 (en) * | 2012-04-13 | 2015-10-14 | 岩谷産業株式会社 | Method and apparatus for supplying mixed gas |
KR101409974B1 (en) * | 2012-09-03 | 2014-06-27 | 엘아이지에이디피 주식회사 | Gas injection-suction unit and atomic layer deposition apparatus having the same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9484190B2 (en) * | 2014-01-25 | 2016-11-01 | Yuri Glukhoy | Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
EP2960059B1 (en) | 2014-06-25 | 2018-10-24 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
US11267012B2 (en) * | 2014-06-25 | 2022-03-08 | Universal Display Corporation | Spatial control of vapor condensation using convection |
US11220737B2 (en) | 2014-06-25 | 2022-01-11 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US10113232B2 (en) | 2014-07-31 | 2018-10-30 | Lam Research Corporation | Azimuthal mixer |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US9951421B2 (en) * | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10008366B2 (en) | 2015-09-08 | 2018-06-26 | Applied Materials, Inc. | Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing |
US10566534B2 (en) | 2015-10-12 | 2020-02-18 | Universal Display Corporation | Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP) |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) * | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111316417B (en) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | Storage device for storing wafer cassettes for use with batch ovens |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
TWI811348B (en) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TW202349473A (en) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
JP2021529254A (en) | 2018-06-27 | 2021-10-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11572624B2 (en) * | 2018-12-13 | 2023-02-07 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Apparatus and method for semiconductor fabrication |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
WO2020185401A1 (en) * | 2019-03-11 | 2020-09-17 | Applied Materials, Inc. | Lid assembly apparatus and methods for substrate processing chambers |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
US11332827B2 (en) * | 2019-03-27 | 2022-05-17 | Applied Materials, Inc. | Gas distribution plate with high aspect ratio holes and a high hole density |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (en) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming topology-controlled amorphous carbon polymer film |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
KR20230037057A (en) | 2019-08-16 | 2023-03-15 | 램 리써치 코포레이션 | Spatially tunable deposition to compensate within wafer differential bow |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
JP6922959B2 (en) * | 2019-09-20 | 2021-08-18 | 株式会社明電舎 | Oxide film forming device |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
TW202115273A (en) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
KR20210048408A (en) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor deposition reactor manifolds |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
TW202125596A (en) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
CN113394086A (en) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | Method for producing a layer structure having a target topological profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
TW202140831A (en) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride–containing layer and structure comprising the same |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
KR20220027026A (en) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for forming metal silicon oxide and metal silicon oxynitride |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
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USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
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CN113960083A (en) * | 2021-09-14 | 2022-01-21 | 散裂中子源科学中心 | Experimental device for small-angle scattering experiment and gas mixing pressurization system |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US579269A (en) * | 1897-03-23 | Roller-bearing | ||
US4966646A (en) * | 1986-09-24 | 1990-10-30 | Board Of Trustees Of Leland Stanford University | Method of making an integrated, microminiature electric-to-fluidic valve |
JP2888253B2 (en) * | 1989-07-20 | 1999-05-10 | 富士通株式会社 | Chemical vapor deposition and apparatus for its implementation |
JP3039583B2 (en) * | 1991-05-30 | 2000-05-08 | 株式会社日立製作所 | Valve and semiconductor manufacturing apparatus using the same |
KR950020993A (en) * | 1993-12-22 | 1995-07-26 | 김광호 | Semiconductor manufacturing device |
US5589002A (en) * | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
JP3468859B2 (en) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | Gas phase processing apparatus and gas phase processing method |
JP3417751B2 (en) * | 1995-02-13 | 2003-06-16 | 株式会社東芝 | Method for manufacturing semiconductor device |
US5792269A (en) | 1995-10-31 | 1998-08-11 | Applied Materials, Inc. | Gas distribution for CVD systems |
US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
US5865417A (en) * | 1996-09-27 | 1999-02-02 | Redwood Microsystems, Inc. | Integrated electrically operable normally closed valve |
US6062256A (en) * | 1997-02-11 | 2000-05-16 | Engineering Measurements Company | Micro mass flow control apparatus and method |
JP2002504977A (en) * | 1997-05-21 | 2002-02-12 | レッドウッド マイクロシステムズ インコーポレイテッド | Low power thermopneumatic microvalve |
US6706334B1 (en) * | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
US6080677A (en) * | 1997-06-17 | 2000-06-27 | Vlsi Technology, Inc. | Method for preventing micromasking in shallow trench isolation process etching |
US5846330A (en) * | 1997-06-26 | 1998-12-08 | Celestech, Inc. | Gas injection disc assembly for CVD applications |
US6080446A (en) | 1997-08-21 | 2000-06-27 | Anelva Corporation | Method of depositing titanium nitride thin film and CVD deposition apparatus |
US6032923A (en) * | 1998-01-08 | 2000-03-07 | Xerox Corporation | Fluid valves having cantilevered blocking films |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6302964B1 (en) * | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6358323B1 (en) * | 1998-07-21 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for improved control of process and purge material in a substrate processing system |
US6160243A (en) * | 1998-09-25 | 2000-12-12 | Redwood Microsystems, Inc. | Apparatus and method for controlling fluid in a micromachined boiler |
TW364054B (en) * | 1998-12-31 | 1999-07-11 | United Microelectronics Corp | Measurement tool for distance between shower head and heater platform |
US6237394B1 (en) * | 1999-02-25 | 2001-05-29 | Redwood Microsystems, Inc. | Apparatus and method for correcting drift in a sensor |
US6432256B1 (en) * | 1999-02-25 | 2002-08-13 | Applied Materials, Inc. | Implanatation process for improving ceramic resistance to corrosion |
JP2000306884A (en) * | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | Apparatus and method for plasma treatment |
US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US6123107A (en) * | 1999-07-09 | 2000-09-26 | Redwood Microsystems, Inc. | Apparatus and method for mounting micromechanical fluid control components |
US6705345B1 (en) * | 1999-11-08 | 2004-03-16 | The Trustees Of Boston University | Micro valve arrays for fluid flow control |
US6432259B1 (en) * | 1999-12-14 | 2002-08-13 | Applied Materials, Inc. | Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates |
US6596085B1 (en) * | 2000-02-01 | 2003-07-22 | Applied Materials, Inc. | Methods and apparatus for improved vaporization of deposition material in a substrate processing system |
US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
US6290491B1 (en) * | 2000-06-29 | 2001-09-18 | Motorola, Inc. | Method for heating a semiconductor wafer in a process chamber by a shower head, and process chamber |
JP2002164336A (en) | 2000-11-27 | 2002-06-07 | Sony Corp | Gas injector and film-forming apparatus |
US6641673B2 (en) * | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
US6514870B2 (en) * | 2001-01-26 | 2003-02-04 | Applied Materials, Inc. | In situ wafer heat for reduced backside contamination |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6884296B2 (en) * | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US20040040503A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
US20040040502A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
-
2002
- 2002-08-23 US US10/226,573 patent/US6884296B2/en not_active Expired - Fee Related
-
2004
- 2004-12-13 US US11/010,534 patent/US20050116064A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026374A1 (en) * | 2002-08-06 | 2004-02-12 | Tue Nguyen | Assembly line processing method |
US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US20090324829A1 (en) * | 2006-04-05 | 2009-12-31 | Dalton Jeremie J | Method and apparatus for providing uniform gas delivery to a reactor |
US7981472B2 (en) * | 2006-04-05 | 2011-07-19 | Aixtron, Inc. | Methods of providing uniform gas delivery to a reactor |
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