US20040233370A1 - Display apparatus and method for manufacturing the same - Google Patents
Display apparatus and method for manufacturing the same Download PDFInfo
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- US20040233370A1 US20040233370A1 US10/873,469 US87346904A US2004233370A1 US 20040233370 A1 US20040233370 A1 US 20040233370A1 US 87346904 A US87346904 A US 87346904A US 2004233370 A1 US2004233370 A1 US 2004233370A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
Abstract
An electric shielding wire made of Cr is provided near the edge of a substrate, in which the electric shielding wire is a lower electric layer for an TFT element. Because countermeasures against static electricity are taken at an early manufacturing stage of the substrate, the elements formed on the substrate are protected against damage due to static electricity generated in subsequent stages. The electricity shielding wire is ultimately used as a pedestal for a wire. With this arrangement, characteristics of various elements of a driver-integrated LCD are protected against deterioration due to static electricity generated in a manufacturing process.
Description
- 1. Field of the Invention
- The present invention relates to a liquid crystal display (LCD) and to a method for manufacturing such LCDs, and in particular to a peripheral driving circuit integrated LCD in which a thin film transistor (TFT) is used as a switching element in a display area and a driving circuit is formed around the display area, and a method for manufacturing the same. The manufacturing method of this invention prevents dielectric breakdown of an element due to static electricity generated in the manufacturing process.
- 2. Description of the Related Art
- LCDs are commonly employed in office automation and audio visual apparatuses because of their advantageously small size, thin shape, and low power consumption. In particular, active matrix LCDs employing a TFT for a switching element to control writing of pixel information into pixels, are used for displays of various television sets or personal computers as they can precisely display motion pictures on a large screen.
- A TFT is a field effect transistor (FET) made by forming metallic and semiconductor layers of a predetermined shape on a insulating substrate. In an active matrix LCD, the TFT is connected to the pixel electrodes for driving liquid crystal. Note that a common electrode, pixel electrode, and liquid crystal sandwiched by these, together constitute a capacitor which corresponds to one pixel.
- In recent years, an LCD has been developed which employs polysilicon (p-si) for the semiconductor layer, instead of amorphous silicon which was mainly used. Laser light is used to anneal, form, and grow p-Si crystal. In general, p-Si is superior in carrier movability to a-Si, and achieves TFT size reduction which enables formation of a highly precise, fine LCD with a higher opening rate. Moreover, when a gate self-align structure enables formation of a fine structure, and reduced parasitic capacitance enables high-speed processing, it is possible to form a high speed driving circuit through employment of an electric complementary structure which uses an n-ch TFT and a p-Ch TFT, i.e., CMOS. This further allows formation of a driving circuit around a pixel area on the same substrate, so that manufacturing costs and the size of an LCD module can be reduced.
- Referring to FIG. 11, which is a plan view of a
mother substrate 1 of the aforementioned driver-integrated LCD, themother substrate 1 includes fouractive matrix substrates 2 which constitute electrode substrates of LCDs on one. On eachactive matrix substrate 2, respective areas are reserved for formation of a display area at the center, gate driver 40 on the left and right sides thereof, a drain driver thereabove, aprecharge driver 6 therebelow, aninput terminal area 7 along the lower edge of thesubstrate 2. Theinput terminal area 7 is connected to a flexible print connector (FPC), which is mounted with an integrated circuit for generating a control signal to be supplied via the FPC to theinput terminal area 7. - From the
input terminal area 7, a vertical clockpulse feeding wire 41 and a vertical startpulse feeding wire 42 extend to thegate driver 4; a horizontal clockpulse feeding wire 51, a horizontal startpulse feeding wire 52, and a videodata feeding wire 53 extend to thedrain driver 5; and a horizontal clockpulse feeding wire 61 and a horizontal startpulse feeding wire 62 extend to theprecharge driver 6. - After an opposing glass substrate is attached to the
motor substrate 1, thesubstrate 1 is cut along thebreak line 8 into four sheets of active matrix panels. Note that the opposing glass substrate has common electrodes formed thereon correspond to the substantial area of each active matrix substrate. - Referring to FIG. 12 which is an enlarged plan view of an
active matrix substrate 2, adisplay area 3 is formed such that horizontally extendinggate lines 31 intersect vertically extendingdrain lines 32, and aswitch element 33 is provided at each crossing, connected to the pixel electrode for driving crystal liquid. - A
gate driver 4 mainly comprises a shift register for supplying a scanning signal voltage to thegate lines 31 in response to a vertical clock pulse. Adrain driver 5 mainly comprises a shift register and a sampling gate for supplying a display signal voltage to thedrain lines 32 in response to a horizontal clock pulse. - A
precharge driver 6, comprising mainly a shift register, is provided, when necessary, to supply the display signal voltage to thedrain lines 32 earlier than thedrain driver 5 to eliminate residual voltage in thedrain lines 32 since previous scanning periods. - In the
input terminal area 7,input terminals 71 are arranged respectively connected to thewires - Each
switch element 33 comprises, for example, a TFT, and allswitch elements 33 in the same row are collectively turned on by a scanning signal voltage, in synchronism with which the display signal voltage is applied from thedrain lines 32 to eachpixel electrode 34. By using the applied voltage as display information, permeability of liquid crystal in each pixel is controlled so as to display an image using bright and dark pixels. - A driver for the aforementioned driver-integrated LCD is made by forming a p-Si (polysilicon) TFT on a substrate. That is, a CMOS is formed using a pair of TFTs each having the same structure as that of a TFT used for a
switch element 33 in the display area so that a number of inverter circuits are formed on a single substrate, formingrespective drivers - Referring to FIG. 13, which is a cross sectional view of major elements of the aforementioned
active matrix substrate 2, from left to right in the drawing are shown a TFT area, awire input terminal 71. On aglass substrate 100, agate electrode 101 and aninput terminal pedestal 121 are formed as a first conductive layer made of Cr or the like. Above them, a gateinsulating film 102, a p-Si film 103, aninjection stopper 104, an interlayerinsulating film 105, asource electrode 106, adrain electrode 107, awire 116, aninput terminal 126, a flatteninginsulating film 108, apixel electrode 109, and an inputterminal contact film 129 are formed. Thesource electrode 106, thedrain electrode 107, thewire 116, and theinput terminal 126 are made of Al or the like to serve as a second conductive layer; thepixel electrode 109 and the inputterminal contact film 129 are made of indium tin oxide (ITO). - As can be seen from this drawing, the
input terminal 71 has a three-layer structure including aninput terminal pedestal 121, aninput terminal 126, and an inputterminal contact film 129. Theinput terminal 126, integrated with thewire 116, is made of a highly conductive Al or the like, which, however, is inferior in property of attaching to thesubstrate 100. Therefore, aninput terminal pedestal 121 made of Cr, which adheres well to both Al and glass, is provided as a base of theinput terminal 126 to ensure rigid adherence between theinput terminal 126 and thesubstrate 100. - Because anisotropy conductive resin used as an adhesive member with an FPC is not easily used with the
input terminal 126, an inputterminal contact film 129 made of ITO is intervened so as to ensure better adherence with the FTC. - First, a
gate line 31, a gate electrode. 101, and aninput terminal pedestal 121 may be formed. That is, agate electrode 101 for a switching element and agate line 31 integrated with thegate electrode 101 are formed in thedisplay area 3; agate electrode 101 for a CMOS TFT and lower wires for wire bonding are formed in thedriver areas pedestal 121 for aninput terminal 71 is formed in theinput terminal area 7. Asource electrode 106, adrain electrode 107,drain lines 32, andwires - As can be seen from the structure shown in FIG. 3, in manufacturing an active matrix substrate, a lower electrode wire layer including a
gate electrode 101 and aninput terminal pedestal 121 are formed at the first stage, followed by many stages at which a p-Si film 103 and variousinsulating films source electrode 106, adrain electrode 107, and awire 116, are formed. Through these stages, static electricity may be caused by friction with themother substrate 1, particularly near the edges of the substrate. Especially, if an island-shapedinput terminal pedestal 121 is charged, charged electricity is discharged toward the surrounding metal. Specifically, referring to FIG. 11, for example, TFT elements constituting aprecharge driver 6 and adrain driver 5 of the adjacentactive matrix substrate 2 are subject to the influence of the discharged electricity from theinput terminal area 7 as they are positioned close to theinput terminal area 7, especially at a stage with agate electrode 101 formed. Discharged static electricity would deteriorate the element characteristics and cause dielectric breakdown, particularly at a stage where a p-Si film 103 has been formed. - Drain
drivers 5 on the upperactive matrix substrates 2 in FIG. 11 are also more likely affected by the static electricity as they are positioned near the edge of themother substrate 1, i.e., close to a part touched by a man's hand or a supporting section of a device. - The present invention has been conceived to with an aim of preventing deterioration of element characteristics due to static electricity generated in manufacturing.
- According to the present invention, a conductive section is formed for discharging electricity, when forming a TFT so that the static electricity generated at the edges of a substrate is absorbed and shielded by the conductive section. With this arrangement, breakdown of the TFT due to static electricity is prevented.
- Particularly, a conductive section formed near the edge of the substrate could effectively prevent the TFT from breakdown.
- Further, the conductive section may preferably be formed as a part of a wire arranged on the substrate. Also, an input terminal constructed to serve as a conductive section may be used to effectively prevent a TFT from breakdown due to static electricity even though the lower layer of the input terminal is charged with static electricity.
- Still further, a conductive section formed on the mother substrate may be used to prevent a TFT from breakdown due to static electricity generated in the mother substrate. Also, when an unnecessary conductive section is disposed of, a finished display apparatus is not affected by the conductive layer as it does not include the conductive layer.
- The above and other objects, features, and advantages, will become further apparent from the following description of the preferred embodiment taken in conjunction with the accompanying drawings wherein:
- FIG. 1 is a plan view showing a mother substrate of a display apparatus according to a first preferred embodiment of the present invention;
- FIG. 2 is a plan view showing an active matrix substrate of a display apparatus according to the first preferred embodiment of the present invention;
- FIG. 3 is a cross sectional view showing significant portions of an active matrix substrate display apparatus according to a first preferred embodiment of the present invention;
- FIG. 4 is a plan view showing a mother substrate of a display apparatus according to a second preferred embodiment of the present invention;
- FIG. 5 is a plan view showing a mother substrate of a display apparatus according to a third first preferred embodiment of the present invention;
- FIG. 6 is a plan view showing a mother substrate of a display apparatus according to a fourth preferred embodiment of
- FIG. 7 is a plan view showing a mother substrate of a display apparatus according to a fifth preferred embodiment of the present invention;
- FIG. 8 is a plan view showing a mother substrate of a display apparatus according to a sixth preferred embodiment of the present invention;
- FIG. 9 is a plan view showing a mother substrate of a display apparatus according to a seventh preferred embodiment of the present invention;
- FIG. 10 is a plan view showing a mother substrate of a display apparatus according to an eighth preferred embodiment of the present invention;
- FIG. 11 is a plan view showing a mother substrate of a conventional display apparatus;
- FIG. 12 is a plan view showing a active matrix substrate for a conventional display apparatus; and
- FIG. 13 is a cross sectional view showing (major ?) part of a active matrix substrate for a conventional display apparatus.
- FIG. 1 is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a first preferred embodiment of the present invention. Themother substrate 1 includes two or more (four in this figure)active matrix substrates 2 which serve as an electrode substrate of LCDs on one side. On eachactive matrix substrate 2, respective areas are reserved for formation of adisplay area 3 at the center, agate driver 4 on the left and right sides thereof, adrain driver 5 above, aprecharge driver 6 below, and aninput terminal area 7 along the lower edge of thesubstrate 2. - Referring to FIG. 2, which is an enlarged plan view showing each
active matrix substrate 2, adisplay area 3 is formed such that horizontally extendinggate lines 31 intersect vertically extendingdrain lines 32, and aswitch element 33 is provided at each crossing, connected to thepixel electrode 34. - The
switch element 33 is a TFT. Eachdriver switch element 33. - At the
input terminal area 7,input terminals 71 are arranged for receiving signals such as a vertical clock pulse, a vertical start pulse, a horizontal clock pulse, a horizontal start pulse, a video data signal, and the like. From theinput terminals 7, a vertical clockpulse feeding wire 41 and a vertical startpulse feeding wire 42 extend to thegate driver 4; a horizontal clockpulse feeding wire 51, a horizontal startpulse feeding wire 52, and a videodata feeding wire 53 extend to thedrain driver 5; and a horizontal clockpulse feeding wire 61 and a horizontal startpulse feeding wire 62 extend to theprecharge driver 6. - In this embodiment, at least one of the wires connected to the
drain driver 5, namely, at least one of the horizontal clockpulse feeding wire 51, the horizontal startpulse feeding wire 52, and the videodata feeding wire 53, is arranged detouring around outside thedrain driver 5, and anelectric shielding wire 10 is provide at least to the part of the video data feeding wire 43 which passes close to and outside the drain driver 5 (indicated by a solid line in FIG. 1). - Referring to FIG. 3, which is a cross sectional view showing major elements of the
active matrix substrate 2, an TFT area, awire 53 area, particularly a part thereof provided with anelectric shielding wire 10, and aninput terminal 71 area are shown from left to right of the drawing. - On a
glass substrate 100, agate electrode 101, awire pedestal 111, and aninput terminal pedestal 121 are formed as a first conductive layer made of a material such as Cr or the like. Thegate electrode 101 is formed integrated with agate line 31. Thewire pedestal 121 serves also as anelectric shielding wire 10. Covering all of the above, agate insulating film 102 is formed. - In the TFT area, a p-
Si film 103 is formed in an islandshape on thegate insulating film 102 above thegate electrode 101. The p-Si film 103 constitutes a non-doped channel region (CH) at a part directly above thegate electrode 101, and a source region S and a drain region D with impurities doped therein respectively at the left and right sides of the CH region. Further on the CH region, aninjection stopper 104 is formed in a shape which is determined depending on thegate electrode 101. Theinjection stopper 104 serves as a mask in doping impurity ions. Covering all of the above, aninterlayer insulating film 105 is formed. Further, asource electrode 106 and adrain electrode 107 are formed as a second conductive layer made of Al or the like such that they are respectively connected to the source region S and the drain region D via a contact hole formed piercing the insulatingfilm 105. - A
wire 116 is formed on theinterlayer insulating film 105 as a second conductive layer made of Al or the like and theinput terminal 126 of thewire 116 is formed connected to theinput terminal pedestal 121 via a contact hole formed piercing the interlayer insulatingfilm 105, theinjection stopper 104, and thegate insulating film 102. - Further, in the TFT, wire, and input terminal areas, a flattening insulating
film 108 is provided covering all of the layers mentioned above. - Still further, in the TFT area, a
pixel electrode 109 made of ITO is formed on the flattening insulatingfilm 108 so as to be connected to thesource electrode 106 via a contact hole formed piercing the flattening insulatingfilm 108. - In the input terminal area, an input
terminal contact film 129 made of ITO is formed so as to be connected to theinput terminal 126 via a contact hole formed piercing through the flattening insulatingfilm 108. - A
gate electrode 101, and awire pedestal 111, and aninput terminal pedestal 121 are first formed as a first conductive layer. At this stage, since at least one of the wires, e.g., a videodata feeding wires 53, is to be arranged detouring around outside a region reserved for adrain driver 5, awire pedestal 111 is formed on thesubstrate 2 at least at a part thereof where the wire 43 is to be arranged passing close to and outside thedrain driver 5 so that thewire pedestal 111 serves as anelectric shielding wire 10. That is, when thewire 53 is finally arranged, thewire 53 has a lamination structure comprising awire pedestal 111 and awire 116, as shown in FIG. 3, at the part thereof passing close to and outside thedrain driver 5. - If static electricity is generated to the
mother substrate 1 at a relatively early stage of the manufacturing process, theinput terminal area 7 is particularly likely to be charged as is used for connection with the outside devices and thus generally provided along the edge of theactive matrix substrate 2. Also, since theinput terminal 7 is formed away from theprecharge driver 6 in order to ensure a space between them to formwires input terminal 7 is resultantly positioned closer to thedrain driver 5 of the adjacentactive matrix substrate 2 than theprecharge driver 6 of its own.substrate 2. Furthermore, misoperation of thedrain driver 5 more greatly effects deterioration of a displayed image than does misoperation of theprecharge driver 6. - Static electricity tends to generate in the
mother substrate 1 near its edges due to contact with base supporting sections of various processing devices and workers' hands in manufacturing or conveying process from one to another manufacturing processes. Naturally, thedrain driver 5, formed near the edge of themotor substrate 1, is likely to be affected by static electricity. - Therefore, according to this invention, an
electric shielding wire 10 is provided at an early manufacturing stage at a porton of anactive matrix substrate 2 outside thedrain driver 5, i.e., a part between thedrain driver 5 and theinput terminal area 7 of theadjacent substrate 2. With this arrangement, static electricity generated in theinput terminal area 7 of the adjacentactive matrix substrate 2 or the edge of itsown mother substrate 1 during a manufacturing process is absorbed by theelectric shielding wire 10 so that damage to the elements of thedrain driver 5 due to static electricity can be prevented. - Despite the aforementioned structure, manufacturing costs do not increase since
electric shielding wire 10 can be formed at the same time when thegate line 31 is formed. - Note that this device is not limited to configurations where the video
data feeding wire 53 detours around outside thedrain driver 5, and anyother lines - The device is also not limited to configurations where it is the
drain driver 5 that is protected by theelectric shielding wire 10. With other layout arrangements of thedisplay area 3,drivers input terminal area 7, any drivers, such as agate driver 4 and aprecharge driver 6, which are arranged close to theinput terminal area 7 of an adjacent active matrix substrate or at a part near the edge of its own substrate, can be protected against breakdown due tostatic electricity 1. - Referring to FIG. 4, which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a second preferred embodiment of the present invention, similar to the first preferred embodiment, at least one of thewires data feeding wire 53, is arranged to detour around outside thedrain driver 5. The difference from the first embodiment lies in the fact that the entire parts of thewires wire 116 and awire pedestal 111. - Therefore, an
electric shielding wire 10 comprising awire pedestal 111 is formed corresponding to the entire part of thewires input terminal area 7 of the adjacentactive matrix substrate 2 or anywhere near the edges of itsown substrate 1, would be absorbed by theelectric shielding wire 10 and discharged through diffusion, to thereby protect thegate driver 4, theprecharge driver 6, thedisplay area 3, and any other elements as well as thedrain driver 5 on themother substrate 1 against breakdown due to static electricity. - It should be noted that a modified arrangement of the above embodiment in which a video
data feeding wire 53 arranged detouring around outside thedrain driver 5, and the detouring part only, or substantially the entire portion thereof, is provided with anelectric shielding wire 53 can enhance the effect of preventing breakdown due to static electricity. - Also, another modification in which an
electric shielding wire 10 is formed as a part of thewires wires gate driver 4 and/or theprecharge driver 6, and anelectric shielding wire 10 is formed as a part of thewires gate driver 4 and theprecharge driver 6, respectively, can protect thegate driver 4 and/or theprecharge driver 6 from breakdown due to static electricity generated near the edges of themother substrate 1. - Referring to FIG. 5, which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a third preferred embodiment of the present invention, the videodata feeding wire 53 and the horizontal clockpulse feeding wire 51 are arranged detouring around outside thedrain driver 5, and anelectric shielding wire 10 is provided to thewires drain driver 5. With this arrangement, twoelectric shielding wires 10 intervene between thedrain driver 5 and theinput terminal area 7 of the adjacentactive matrix substrate 2, so that thedrain driver 5 can be more strongly protected from damage due to static electricity. - It should be noted that an
electric shielding wire 10 may be provided to not only the videodata feeding wire 53 and the horizontal clockpulse feeding wire 51, but also to anyother lines - Alternatively, the
electric shielding wire 10 may be provided to a substantial or entire portion of thewires gate driver 4 and theprecharge driver 6. - Referring to FIG. 6 which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a fourth preferred embodiment of the present invention, anelectric shielding wire 10 is provided close to and outside thedrain driver 5 independent of thewires wires drain driver 5 in this embodiment. - Alternatively, the
electric shielding wire 10 may be arranged outside thegate driver 4 or theprecharge driver 6. - Referring to FIG. 7 which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a fifth preferred embodiment of the present invention, anelectric shielding wire 10 is provided independent of thewires drain driver 5, and also provided to a part of the videodata feeding wire 53 passing close to and outside thedrain driver 5. The resultantelectric shielding wires 10 are arranged passing close to and substantially outside thedrain driver 5, so that thedrain driver 5 can be protected against static electricity generated in theinput terminal area 7 of the adjacentactive matrix substrate 2, or at a part near the edges of itsown mother substrate 1. Similar to the fourth embodiment, this embodiment may also be employed when the wire layout cannot be easily changed. - Alternatively, an
electricity shielding wire 10 may be provided to the substantial or entire part of thewires gate driver 4 and/or (?) theprecharge driver 6. - Referring to FIG. 8, which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a sixth preferred embodiment of the present invention, anelectric shielding wire 10 is provided outside theinput terminal area 7, so that static electricity generated at theinput terminal area 7 does not damage thedrain driver 5 of the adjacentactive matrix substrate 2. This embodiment may be employed when the wire layout cannot be easily changed or thewires drain driver 5. - Referring to FIG. 9, which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to a seventh preferred embodiment of the present invention, at the beginning of the film formation process, a dedicated region for anelectric shielding wire 10 is provided on themother substrate 1 between adjacentactive matrix substrates 2, which is then cut when finishedactive matrix substrates 2 are separated. This embodiment may be employed whenactive matrix substrates 2 occupy a relatively small region on themother substrate 1 so that a sufficient region can be ensured for provision of anelectric shielding wire 10. - In this embodiment, independent electric shielding wires do not remain in finished LCDs, so image display is not affected by the electric shielding wire.
- Referring to FIG. 10, which is a plan view showing a
mother substrate 1 of a driver-integrated LCD according to an eighth preferred embodiment of the present invention, theinput terminal area 7 is positioned 800 μm or more, and preferably 1800 μm or more, away from the precharge driver 6 (a separation distance a) and thedrain driver 5 of the adjacent active matrix substrate 2 (a separation distance b). - The following table shows the frequency of defect occurrence to a
mother substrate 1 relative to the smaller one of the separation distances a and b.TABLE 1 Separation Distance (a, b) Defect Frequency (%) 700 μm 13.7% 800 μm 2.8% 1800 μm 0.1% - Referring to this table, it can be seen that, when the separation distance a or b is 700 μm, defects will be caused to the
precharge driver 6 or thedrain driver 5 of the adjacentactive matrix substrate 2 with high frequency, or 13.7%. The frequency drops significantly to 2.8% when the separation distance a or b is 800 μm, and further drops to 0.1% when the distance is 1800 μm, which is a value small enough that the effect of discharged electricity from a chargedinput terminal area 7 can almost be neglected. In view of yield and costs, defect frequency due to the same cause needs to be suppressed below 1 to 2%, at best 3%. Therefore, according to the table, a driver must be situated, at the closest, 800 μm or more, and preferably 1800 μm or more, away from theinput terminal area 7. - As described above, according to the present invention, a wire for protection against static electricity can be provided at a relatively early manufacturing stage for a display apparatus substrate. As a result, elements can be protected against static electricity generated in the manufacturing process. This can resultantly increase manufacturing yield.
Claims (9)
1-6. (canceled)
7. A substrate for making a display apparatus; comprising:
a plurality of active matrix substrates including
a plurality of pixel electrodes each corresponding to each of the plurality of pixels,
a plurality of switching thin film transistors, each comprising a plurality of conductive layers, connected to the plurality of pixel electrodes, for supplying signal voltage to the plurality of pixel electrodes,
a plurality of driving thin film transistors, each comprising a plurality of conductive layers, arranged close the plurality of pixel electrodes for generating a driving signal for driving the number of switching thin film transistors,
a plurality of input terminals for receiving a control signal for driving the plurality of driving thin film transistors, and
wires for connecting the plurality of driving thin film transistors and the plurality of input terminals; and
a region where a discharge conductive section is formed between adjacent active matrix substrates, the discharge conductive section having a conductive layer similar to the lowest conductive layer included in each switching thin film transistor and/or each driving thin film transistor.
8. A mother substrate according to claim 7 , wherein the region where a discharge conductive section is formed is discarded when the plurality of active matrix substrates are separated.
9. A display apparatus having a plurality of pixels, comprising:
a plurality of thin film transistors on a substrate, each comprising a plurality of conductive layers, for controlling display via the plurality of pixels; and
a discharge conductive section on the substrate, having a lamination structure comprising at least two conductive layers similar to the plurality of conductive layers constituting each thin film transistor.
10. A display apparatus according to claim 9 , wherein the discharge conductive section constitutes at least a portion of a wire for sending a signal for controlling the plurality of thin film transistors.
11. A display apparatus according to claim 9 , wherein the discharge conductive section is provided electrically independent from the other conductive sections.
12. A display apparatus according to claim 9 , wherein the discharge conductive section is provided outside the plurality of thin film transistors.
13. A method for manufacturing a display apparatus; wherein
the display apparatus comprises
a plurality of thin film transistors on a substrate, each comprising a plurality of conductive layers for controlling display via the plurality of pixels; and
a discharge conductive section carried on the substrate, having a lamination structure comprising at least two conductive layers similar to a plurality of conductive layers constituting each thin film transistor, and
wherein
the plurality of conductive layers of the plurality of thin film transistors and the discharge conductive section are formed during the same manufacturing step.
14. A method for manufacturing a display apparatus, comprising:
a step of making a mother substrate having a plurality of active matrix substrates each including
a plurality of pixel electrodes corresponding to the plurality of pixels,
a plurality of switching thin film transistors, each comprising a plurality of conductive layers, connected to the plurality of pixel electrodes, for supplying signal voltage to the plurality of pixel electrodes,
a plurality of driving thin film transistors each comprising a plurality of conductive layers arranged close to the plurality of pixel electrodes, for driving the number of switching thin film transistors,
a plurality of input terminals for receiving a control signal for driving the plurality of driving thin film transistors,
wires for connecting the plurality of driving thin film transistors and the plurality of input terminals, and
a region where a discharge conductive section is formed between adjacent active matrix substrates, said discharge conductive section having a conductive layer similar to the lowest conductive layer constituting each switching thin film transistor and/or each driving thin film transistor; and
a step of separating the plurality of active matrix substrates from the mother substrate while discarding the region where the discharge conductive section is formed whereby a plurality of display apparatuses are manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/873,469 US20040233370A1 (en) | 1997-09-26 | 2004-06-22 | Display apparatus and method for manufacturing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9261932A JPH11101986A (en) | 1997-09-26 | 1997-09-26 | Display device and large substrate for display device |
JPHEI-9-261932 | 1997-09-26 | ||
US09/160,312 US6774957B2 (en) | 1997-09-26 | 1998-09-25 | Display apparatus having an electric shielding wire and method for manufacturing the same |
US10/873,469 US20040233370A1 (en) | 1997-09-26 | 2004-06-22 | Display apparatus and method for manufacturing the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/160,312 Division US6774957B2 (en) | 1997-09-26 | 1998-09-25 | Display apparatus having an electric shielding wire and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
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US20040233370A1 true US20040233370A1 (en) | 2004-11-25 |
Family
ID=17368707
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/160,312 Expired - Lifetime US6774957B2 (en) | 1997-09-26 | 1998-09-25 | Display apparatus having an electric shielding wire and method for manufacturing the same |
US10/873,469 Abandoned US20040233370A1 (en) | 1997-09-26 | 2004-06-22 | Display apparatus and method for manufacturing the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US09/160,312 Expired - Lifetime US6774957B2 (en) | 1997-09-26 | 1998-09-25 | Display apparatus having an electric shielding wire and method for manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US6774957B2 (en) |
JP (1) | JPH11101986A (en) |
KR (1) | KR100645405B1 (en) |
TW (1) | TW466369B (en) |
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US9052551B2 (en) | 1999-07-06 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
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Also Published As
Publication number | Publication date |
---|---|
TW466369B (en) | 2001-12-01 |
KR19990030141A (en) | 1999-04-26 |
KR100645405B1 (en) | 2007-04-25 |
JPH11101986A (en) | 1999-04-13 |
US6774957B2 (en) | 2004-08-10 |
US20010055085A1 (en) | 2001-12-27 |
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