US20040188695A1 - Laser with resonant reflector - Google Patents
Laser with resonant reflector Download PDFInfo
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- US20040188695A1 US20040188695A1 US10/819,775 US81977504A US2004188695A1 US 20040188695 A1 US20040188695 A1 US 20040188695A1 US 81977504 A US81977504 A US 81977504A US 2004188695 A1 US2004188695 A1 US 2004188695A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
Abstract
A laser is provided that includes a top mirror layer upon which a resonant reflector is situated. The resonant reflector includes a first material layer having a thickness that is about an odd multiple of a quarter of the wavelength to which the laser is tuned. Patterned regions extend into the first material layer so that the thickness of the first material layer in the patterned regions is reduced. Some patterned regions are at least partially filled with a second material having a refractive index that is greater than the refractive index of the first material layer. The second material also has a thickness of about an odd multiple of a quarter of the wavelength to which the laser is tuned. Finally, a third layer positioned immediately adjacent the first material layer has a refractive index that is greater than the refractive index of the first material layer.
Description
- This application is a continuation, and claims the benefit, of U.S. patent application Ser. No. 09/751,423, entitled SPATIALLY MODULATED REFLECTOR FOR AN OPTOELECTRONIC DEVICE, filed Dec. 29, 2000, and incorporated herein in its entirety by this reference.
- This invention generally relates to optoelectronic components such as lasers. More particularly, embodiments of the invention are concerned with lasers that include a resonant reflector for use in facilitating mode control in the laser.
- In one exemplary embodiment of the invention, a laser is provided that includes a top mirror layer upon which a resonant reflector is situated. The resonant reflector includes a first material layer having a thickness that is about an odd multiple of a quarter of the wavelength to which the laser is tuned. The first layer also has one or more patterned regions that extend downward into the first material layer a distance so that the thickness of the first material layer in the patterned regions is thereby reduced. Some of the patterned regions of the first material layer are at least partially filled with a second material having a refractive index that is greater than the refractive index of the first material layer. Similar to the first material layer, the second material has a thickness of about an odd multiple of a quarter of the wavelength to which the laser is tuned. Finally, a third layer is provided that is positioned immediately adjacent the first material layer. The third layer has a refractive index that is greater than the refractive index of the first material layer. Among other things, this construction facilitates mode control in the laser without necessitating significant additional processing and manufacturing steps.
- Other objects of the present invention and many of the attendant advantages of the present invention will be readily appreciated as the same becomes better understood by reference to the following detailed description when considered in connection with the accompanying drawings, in which like reference numerals designate like parts throughout the figures thereof and wherein:
- FIG. 1 is a schematic diagram of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser in accordance with the prior art;
- FIG. 2 is a schematic cross-sectional side view of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser with a first illustrative resonant reflector for increased mode control in accordance with the present invention;
- FIGS. 3A-3D are schematic cross-sectional side views showing an illustrative method for making the resonant reflector of FIG. 2;
- FIG. 4 is a schematic cross-sectional side view of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser with a second illustrative resonant reflector for increased mode control in accordance with the present invention;
- FIGS. 5A-5D are schematic cross-sectional side views showing an illustrative method for making the resonant reflector of FIG. 4;
- FIG. 6 is a schematic cross-sectional side view of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser with yet another illustrative resonant reflector for increased mode control in accordance with the present invention;
- FIGS. 7A-7D are schematic cross-sectional side views showing a first illustrative method for making the resonant reflector of FIG. 6;
- FIGS. 8A-8E are schematic cross-sectional side views showing another illustrative method for making the resonant reflector of FIG. 6;
- FIGS. 9A-9E are schematic cross-sectional side views showing yet another illustrative method for making the resonant reflector of FIG. 6;
- FIG. 10 is a schematic cross-sectional side view showing another illustrative embodiment of the present invention similar to that shown in FIGS. 5A-5D;
- FIG. 11 is a schematic cross-sectional side view showing another illustrative embodiment of the present invention similar to that shown in FIGS. 5A-5D; and
- FIG. 12 is a schematic cross-sectional side view showing another illustrative embodiment of the present invention similar to that shown in FIGS. 8A-8E.
- FIG. 1 is a schematic illustration of a planar, current-guided, GaAs/AlGaAs top surface emitting
vertical cavity laser 10 in accordance with the prior art. Formed on an n-doped gallium arsenide (GaAs)substrate 14 is an n-contact 12.Substrate 14 is doped with impurities of a first type (i.e., n type). An n-type mirror stack 16 is formed onsubstrate 14. Formed on stack 16 is aspacer 18.Spacer 18 has abottom confinement layer 20 and atop confinement layer 24 surroundingactive region 22. A p-type mirror stack 26 is formed ontop confinement layer 24. A p-metal layer 28 is formed onstack 26. The emission region may have apassivation layer 30. -
Isolation region 29 restricts the area of thecurrent flow 27 through the active region.Region 29 may be formed by deep H+ ion implantation. The diameter “g” may be set to provide the desired active area, and thus the gain aperture of theVCSEL 10. Further, the diameter “g” may be set by the desired resistance of the p-type mirror stack 26, particularly through thenon-conductive region 29. Thus,non-conductive region 29 performs the gain guiding function. The diameter “g” is typically limited by fabrication limitations, such as lateral straggle during the implantation step. -
Spacer 18 may contain a bulk or quantum-well active region disposed betweenmirror stacks 16 and 26. Quantum-wellactive region 22 may have alternating layers of aluminum gallium arsenide (AlGaAs) barrier layers and GaAs quantum-well layers. InGaAs quantum wells may also be used in the active region, particularly where an emission wavelength (e.g. λ=980 nm) is desired where GaAs is transparent.Stacks 16 and 26 are distributed Bragg reflector (DBR) stacks, and may include periodic layers of doped AlGaAs and aluminum arsenide (AlAs). The AlGaAs of stack 16 is doped with the same type of impurity as substrate 14 (e.g., n type), and the AlGaAs ofstack 26 is doped with the other kind of impurity (e.g., p type). -
Metal contact layers laser diode 10. Whenlaser diode 10 is forward biased with a more positive voltage oncontact 28 than oncontact 12,active region 22 emitslight 31 which passes throughstack 26. - Most VCSELs of practical dimensions are inherently multi (transverse) mode. Single lowest-order mode VCSELs are favored for coupling into single-mode fibers, and are advantageous for free-space and/or wavelength sensitive systems, and may even be beneficial for use in extending the bandwidth-length product of standard 50 μm and 62.5μm GRIN multi-mode fiber. However, it has long been known that, although the short optical cavity (2λ) of the VCSEL favors single longitudinal mode emission, the multi-wavelength (10λ) lateral dimensions facilitate multi-transverse mode operation.
- As indicated above, higher order modes typically have a greater lateral concentration of energy away from the center of the optical or lasing cavity. Thus, the most obvious way to force the laser to oscillate in only a lowest order circularly symmetric mode is to make the lateral dimension “g” of the active area small enough to prevent higher-order modes from reaching threshold. However, this necessitates lateral dimensions of less than about 5 μm for typical VCSELs. Such small areas may result in excessive resistance, and push the limits obtainable from conventional fabrication methodologies. This is particularly true for implantation depths of greater than about 1 μm, where lateral straggle may become a limiting factor. Thus, control of transverse modes remains difficult for VCSEL's of practical dimensions.
- One illustrative approach for controlling transverse modes of an optoelectronic device is shown in FIG. 2. FIG. 2 is a schematic cross-sectional side view of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser, as in FIG. 1, with a top mounted mode control
resonant reflector 50. Theresonant reflector 50 includes a patternedfirst material layer 56 that is positioned on top of thetop mirror layer 52 ofVCSEL 54. Asecond material layer 58 is provided over the patternedfirst material layer 56, as shown. - The
first material layer 56 preferably has a refractive index that is greater than the refractive index of thesecond material layer 58, and the first and second material layers 56 and 58 preferably have a refractive index that is less than the refractive index of thetop mirror layer 52 of theoptoelectronic device 54. In one example, thefirst material layer 56 is SiO2, thesecond material layer 58 is Si3N4 or TiO2, and thetop mirror layer 52 is AlGaAs, although other suitable material systems are contemplated. Each layer is preferably an even multiple of one-quarter wavelength (λ/4) thick. This causes a reduction in reflectivity of theresonant reflector 50 in those regions that correspond to the etched regions 60 (see FIG. 3B) in thefirst material layer 56, that is, those regions that are filled with thesecond material layer 58. By designing the etched regions to circumscribe the desired optical cavity, this difference in reflectivity can be used to help provide mode control forVCSEL 54. - In forming the
resonant reflector 50, and referring now to FIG. 3A, thefirst material layer 56 is provided over thetop mirror layer 52. As shown in FIG. 3B, thefirst material layer 56 is patterned, preferably by etching away thefirst material layer 56 in the region or regions circumscribing the desired optical cavity of theVCSEL 54. As shown in FIG. 3C, asecond material layer 58 is provided over thefirst material layer 56. Thesecond material layer 58 is preferably provided over both the etched 60 and non-etched regions of thefirst material layer 56, but may be confined to the non-etched regions if desired. Selected regions, such asregions second material layer 58 may then be removed to provide access to thetop mirror layer 52. Then, and as shown in FIG. 3D, acontact layer 64 may be provided on the exposed regions of thetop mirror layer 52. Thecontact layer 64 may provide electrical contact to thetop mirror layer 52. - In a related embodiment, a top mirror layer of the optoelectronic device may function as the
first material layer 56 discussed above. Thus, the top mirror layer may be patterned, preferably by etching at least partially into the top mirror layer in the region or regions circumscribing the desired optical cavity of the optoelectronic device. In one embodiment, thelayer 52 below the top mirror layer may function as an etch stop layer. Then, asecond material layer 58 is provided over the top mirror layer. The second material layer is preferably provided over both the etched and non-etched regions of the top mirror layer, but may only be provided over the non-etched regions, if desired. In this embodiment, the regions labeled 56 in FIGS. 2-3 should have the same cross-hatch pattern aslayer 53, and the refractive index of these regions should be less than the refractive index oflayer 52. - Another illustrative approach for controlling transverse modes of an optoelectronic device is shown in FIG. 4. FIG. 4 is a schematic cross-sectional side view of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser, as in FIG. 1, with another illustrative top mounted mode control
resonant reflector 70. In this embodiment, theresonant reflector 70 is formed by etching down into but not all the way through one or more of the top mirror layers 72 of the optoelectronic device. The etched region, generally shown at 74, preferably circumscribes the desired optical cavity of the optoelectronic device, and has a depth that causes a phase shift that reduces the reflectivity of theresonant reflector 70 at the desired operating wavelength, such as a depth that corresponds to an odd multiple of λ/4. To provide further differentiation, acap mirror 76 having one or more additional layers may be provided on selectednon-patterned regions 78 of thetop mirror layer 72, such as over the desired optical cavity of the optoelectronic device. Thecap mirror 70 may include one or more periods of a conventional semiconductor DBR mirror, or more preferably, a narrow band dielectric reflection filter. A metal layer may be provided on selected regions of thetop mirror layer 72. The metal layer may function as a top contact layer. - In forming the
resonant reflector 70, and referring now to FIGS. 5A-5B, a top mirror layer 72 (or some other top layer) is patterned and etched to form one or moreetched regions 74. Theetched regions 74 are preferably formed to circumscribe the desired optical cavity of the optoelectronic device. Also, the etchedregions 74 are preferably etched down to a depth that causes a phase shift in the incident light, thereby reducing the reflectivity of theresonant reflector 70 in those regions. - Next, and as shown in FIG. 5C, a
cap mirror 76 is formed on the patternedtop mirror layer 72. As indicated above, thetop mirror layer 72 may include one or more semiconductor DBR mirror periods, and/or a narrow band dielectric reflection filter. In either case, and to provide further differentiation in reflectivity, thecap mirror 76 may be etched away except on those areas that correspond to the desired optical cavity of the optoelectronic device. This is shown in FIG. 5D. Alternatively, the patternedcap mirror 76 may be formed using well known lift-off techniques. Thereafter, acontact layer 80 may be provided on the selected regions of thetop mirror layer 72. Thecontact layer 80 may provide electrical contact to thetop mirror layer 72. - Another illustrative approach for controlling transverse modes of an optoelectronic device is shown in FIG. 6. FIG. 6 is a schematic cross-sectional side view of a planar, current-guided, GaAs/AlGaAs top surface emitting vertical cavity laser, as in FIG. 1, with yet another illustrative top mounted mode control
resonant reflector 90. In this illustrative embodiment, theresonant reflector 90 has a refractive index that does not abruptly change across the optical cavity of the optoelectronic device. - In a preferred embodiment, the
resonant reflector 90 has at least oneresonant reflector layer 92 that has a refractive index. The refractive index may include, for example, contributions from both afirst material 94 having a first refractive index and asecond material 96 having a second refractive index. In a preferred embodiment, thefirst material 94 is confined to a first region and the second material is confined to a second region, wherein the first region and the second region co-extend along aninterface 98. By making theinterface 98 non-parallel with theoptical axis 100 of the optoelectronic device, the refractive index of the resonant reflector layer, at least when viewed laterally along the optical cavity of the optoelectronic device, does not change abruptly across the optical cavity. Rather, there is a smooth transition from one refractive index to another. This reduces the diffraction effects caused by abrupt changes in the refraction index. It is contemplated that one or more periods of a conventional semiconductor DBR mirror, or more preferably, a narrow banddielectric reflection filter 106, may be provided on top of theresonant reflector 90, as shown. Finally, acontact layer 102 may be provided around the periphery of the optical cavity. In the embodiment shown, thecontact layer 102 is in direct contact with thetop mirror layer 104 and provides electrical contact to thetop mirror layer 104. - The smooth transition from one refractive index to another is further illustrated in
chart 110. The X axis ofchart 110 represents the lateral position along the optical cavity of the device shown above the chart. The Y axis ofchart 110 corresponds to the reflectivity “R” of the top mirror, including theresonant reflector 90 and conventional semiconductor DBR mirror ordielectric reflection filter 106. The reflectivity “R” of the top mirror, at least in the region of theresonant reflector 90, is dependent on the refractive index of theresonant reflector layer 90. - Traveling from left to right laterally along the optical cavity of the optoelectronic device, the reflectivity starts at a
first value 112. Thefirst value 112 is shown relatively low because theresonant reflector 90 and the conventional semiconductor DBR mirror ordielectric reflection filter 106 do not extend out into this region. Thecontact layer 102 may also decrease the reflectivity in this region. - At the edge of the
resonant reflector 90, the reflectivity increases to avalue 114, which includes contributions from thesecond material 96 of theresonant reflector layer 90 and the conventional semiconductor DBR mirror ordielectric reflection filter 106. Moving further to the right, the refractive index of theresonant reflector 90 begins to change due to the relative contributions of thefirst material 94 and thesecond material 96. This causes the reflectivity of theresonant reflector 90 to smoothly increase toward the center of the desired optical cavity, as shown. Preferably, the reflectivity of theresonant reflector 90 reaches a maximum 116 in or around the center of the desired optical cavity. The reflectivity of theresonant reflector 90 then decreases to the right of the center of the desired optical cavity, in an opposite manner to that described above. As can be seen, the refractive index, and thus the reflectivity, of theresonant reflector 90 does not change abruptly across the optical cavity. Rather, there is a smooth transition from one refractive index to another. This reduces the diffraction effects often caused by abrupt changes in the refraction index of a resonant reflector. - FIGS. 7A-7D are schematic cross-sectional side views showing a first illustrative method for making the resonant reflector of FIG. 6. In this illustrative embodiment, a first substantially planar layer of
material 94 is provided on, for example, atop mirror layer 104 of a conventional DBR mirror. Thetop mirror layer 104 preferably has a refractive index that is higher than the refractive index of the first layer ofmaterial 94. Thetop mirror layer 104 may be, for example, AlGaAs, and the first layer ofmaterial 94 may be, for example, TiO2, Si3N4, or a polymer such as polyamide or Benzocyclobuthene (BCB). - The first layer of material is then patterned, as shown in FIG. 7A. This is typically done using a conventional etch process. As shown in FIG. 7B, the patterned first layer of
material 104 is then heated, which causes it to reflow. This results in a non-planartop surface 98. Then, and as shown in FIG. 7C, a second layer ofmaterial 96 is provided over the first layer ofmaterial 94. Thetop surface 105 of the second layer ofmaterial 96 is preferably substantially planar, but it may be non-planar if desired. The second layer ofmaterial 96 preferably has a refractive index that is lower than the refractive index of the first layer ofmaterial 94. The second layer ofmaterial 96 may be, for example, SiO2, a polymer, or any other suitable material. When desired, thetop surface 105 of the second layer ofmaterial 96 may be planarized using any suitable method including, for example, reflowing the second layer ofmaterial 96, mechanical, chemical or chemical-mechanical polishing (CMP) the second layer ofmaterial 96, etc. In some embodiments, thetop surface 105 is left non-planar. - The second layer of
material 96 is preferably provided over the entire top surface of the resonant reflector, and etched away in those regions where atop contact 102 is desired. Once the second layer ofmaterial 96 is etched, acontact layer 102 is provided on the exposed regions of thetop mirror layer 104. Thecontact layer 102 provides electrical contact to thetop mirror layer 104. As shown in FIG. 7D, acap mirror 106 may then be provided above the second layer ofmaterial 96. Thecap mirror 106 may include one or more periods of a conventional semiconductor DBR mirror, or more preferably, a narrow band dielectric reflection filter. - FIGS. 8A-8E are schematic cross-sectional side views showing another illustrative method for making the resonant reflector of FIG. 6. In this illustrative embodiment, and as shown in FIG. 8A, a first substantially planar layer of
material 94 is provided on, for example, atop mirror layer 104 of a conventional DBR mirror. Thetop mirror layer 104 preferably has a refractive index that is higher than the refractive index of the first layer ofmaterial 94. Thetop mirror layer 104 may be, for example, AlGaAs, and the first layer ofmaterial 94 may be, for example, TiO2, Si3N4, or any other suitable material. Next, aphotoresist layer 110 is provided and patterned on the first layer ofmaterial 94, preferably forming an island of photoresist above the desired optical cavity of the optoelectronic device. - As shown in FIG. 8B, the
photoresist layer 110 is then heated, causing it to reflow. This results in a non-planar top surface on thephotoresist layer 110. That is, the top surface of thephotoresist layer 110 may have portions that taper down toward the first layer ofmaterial 94. Next, and as shown in FIG. 8C, thephotoresist layer 110 and the first layer ofmaterial 94 are etched for a specified period of time. The etchant preferably selectively etches both thephotoresist layer 110 and the first layer ofmaterial 94. This transfers the shape of the non-planar top surface of thephotoresist layer 110 to the first layer ofmaterial 94. - As shown in FIG. 8D, a second layer of
material 96 is then provided over the first layer ofmaterial 94. The second layer ofmaterial 96 preferably has a refractive index that is less than the refractive index of the first layer ofmaterial 94. The second layer ofmaterial 96 is preferably provided over the entire top surface of the resonant reflector, and etched away in those regions where atop contact 102 is desired. Once the second layer ofmaterial 96 is etched, acontact layer 102 is provided on the exposed regions of thetop mirror layer 104. Thecontact layer 102 provides electrical contact to thetop mirror layer 104. Preferably, the top surface of the second layer ofmaterial 96 is substantially planar. As shown in FIG. 8E, acap mirror 106 may be provided above the second layer ofmaterial 96, if desired. Thecap mirror 106 may include one or more periods of a conventional semiconductor DBR mirror, or more preferably, a narrow band dielectric reflection filter. - FIGS. 9A-9E are schematic cross-sectional side views showing yet another illustrative method for making the resonant reflector of FIG. 6. In this illustrative embodiment, and as shown in FIG. 9A, a first substantially planar layer of
material 94 is provided on, for example, atop mirror layer 104 of a conventional DBR mirror. Like above, thetop mirror layer 104 preferably has a refractive index that is higher than the refractive index of the first layer ofmaterial 94. - Next, and as shown in FIG. 9B, the first layer of
material 94 is patterned, preferably forming an island above the desired optical cavity of the optoelectronic device. This results in the first layer ofmaterial 94 havinglateral surfaces 118 that extend up to atop surface 116 that is defined by topperipheral edges 120. Aphotoresist layer 114 is then provided over the patterned first layer ofmaterial 94, including over the lateral surfaces 118, the topperipheral edges 120 and thetop surface 116. Because of the step between thetop surface 116 and the lateral surfaces 118, thephotoresist layer 114 is thinner near the topperipheral edges 120 than along either thelateral surfaces 118 ortop surface 116 of the patterned first layer ofmaterial 94, as shown. - As shown in FIG. 9C, the
photoresist layer 114 and the first layer ofmaterial 94 are then etched for a specified period of time. During this etch step, those regions of the first layer ofmaterial 94 that are adjacent the thinner regions of thephotoresist layer 114 are subject to the etchant for a longer period of time than those regions that are adjacent thicker regions of thephotoresist layer 114. Thus, and as shown in FIG. 9C, the topperipheral edges 120 of the first layer ofmaterial 94 are etched more than those regions away from the topperipheral edges 120, resulting in taperededges 122. - After the etching step, and as shown in FIG. 9D, a second layer of
material 96 may be provided over the first layer ofmaterial 94. Like above, the second layer ofmaterial 96 preferably has a refractive index that is less than the refractive index of the first layer ofmaterial 94. The second layer ofmaterial 96 is preferably provided over the entire top surface of the resonant reflector, and etched away in those regions where atop contact 102 is desired. Once the second layer ofmaterial 96 is etched, acontact layer 102 is provided on the exposed regions of thetop mirror layer 104. Thecontact layer 102 provides electrical contact to thetop mirror layer 104. Preferably, the top surface of the second layer ofmaterial 96 is substantially planar. - As shown in FIG. 9E, a
cap mirror 106 may be provided above the second layer ofmaterial 96, if desired. Thecap mirror 106 may include one or more periods of a conventional semiconductor DBR mirror, or more preferably, a narrow band dielectric reflection filter. - FIG. 10 is a schematic cross-sectional side view showing another illustrative embodiment of the present invention similar to that shown in FIGS. 5A-5D. In this embodiment, a
top layer 110, which may be the top mirror layer of the top DBR mirror stack of the optoelectronic device or an additional layer on top of the top mirror layer, may be etched down—but not all the way through. The etched region preferably circumscribes the desired optical cavity of the optoelectronic device, and has a depth that causes a phase shift that reduces the reflectivity of the resonant reflector at the desired operating wavelength, such as a depth that corresponds to an odd multiple of λ/4. Like in FIGS. 5A-5D, acap mirror 112 having one or more additional layers may be provided on selected non-patterned regions oflayer 110, such as over the desired optical cavity of the optoelectronic device, to provide further differentiation in reflectivity. Ametal layer 114 may then be provided on the etched region oflayer 110. The metal layer may function as the top contact. By extending themetal layer 114 all the way or near thecap mirror 112, better current spreading can be achieved for the optoelectronic device. - FIG. 11 is a schematic cross-sectional side view showing another illustrative embodiment of the present invention similar to that shown in FIGS. 5A-5D. This embodiment is similar to that of FIG. 10, but the metal layer, now labeled116, extends over the etched region of
layer 110 and over thecap mirror 112. For back illumination devices, this may provide even better current spreading for the optoelectronic device. - FIG. 12 is a schematic cross-sectional side view showing another illustrative embodiment of the present invention similar to that shown in FIGS. 8A-8E. A resonant reflector is provided that has a refractive index that does not change abruptly across the optical cavity of the optoelectronic device. The illustrative resonant reflector includes at least one resonant reflector layer that has a refractive index that includes contributions from, for example, both a
first material 120 having a first refractive index and asecond material 122 having a second refractive index. In the embodiment shown, thefirst material 120 is confined to a first region and thesecond material 122 is confined to a second region, wherein the first region and the second region co-extend along an interface. Ametal layer 124 is then provided over the entire structure. For back illumination devices, themetal layer 124 may provide enhanced current spreading when compared to the device shown in FIGS. 8A-8E. - Having thus described the preferred embodiments of the present invention, those of skill in the art will readily appreciate that the teachings found herein may be applied to yet other embodiments within the scope of the claims hereto attached.
Claims (41)
1. A laser, comprising:
a top layer; and
a resonant reflector disposed proximate the top layer and comprising:
a first material layer with a first refractive index and having a thickness of about an odd multiple of a quarter of a wavelength to which the laser is tuned, the first material layer having at least one patterned region that extends at least partially into the first material layer thus reducing the thickness of the first material layer in the at least one patterned region;
a second material at least partially filling at least one selected patterned region and having a second refractive index, one of the first and second refractive indices being greater than the other of the first and second refractive indices; and
a third layer positioned immediately adjacent the first material layer, the third layer having a refractive index greater than the refractive index of the first material layer.
2. The laser as recited in claim 1 , wherein one of the at least one patterned region extends completely through the first material layer.
3. The laser as recited in claim 1 , wherein the second refractive index is greater than the first refractive index.
4. The laser as recited in claim 1 , wherein the second material has a thickness of about an odd multiple of a quarter of the wavelength to which the laser is tuned.
5. The laser as recited in claim 1 , wherein the second material also extends above at least one non-patterned region of the first material layer.
6. The laser as recited in claim 1 , wherein the at least one patterned region is configured such that reflectivity of the resonant reflector is reduced in the at least one patterned region.
7. The laser as recited in claim 1 , wherein the at least one patterned region is configured and arranged to facilitate mode control for the laser.
8. The laser as recited in claim 1 , wherein the top layer comprises a mirror layer.
9. The laser as recited in claim 1 , wherein the first material substantially comprises SiO2, the second material substantially comprises Si3N4 or TiO2, and the third material substantially comprises AlGaAs.
10. The laser as recited in claim 1 , wherein the first material layer comprises a top mirror layer of a DBR mirror.
11. The laser as recited in claim 1 , wherein the top layer substantially comprises GaAs/AlGaAs.
12. A laser, comprising:
a top layer; and
a resonant reflector disposed proximate the top layer and comprising:
a first mirror region having a top mirror layer, the top mirror having at least one patterned region that extends at least partially into the top mirror layer, and the top mirror layer further including at least one non-patterned region; and
a second mirror region formed on at least one selected non-patterned region of the top mirror layer.
13. The laser as recited in claim 12 , wherein the at least one patterned region is configured to implement a phase shift, relative to the at least one non-patterned region.
14. The laser as recited in claim 12 , wherein the at least one patterned region is configured and arranged to facilitate mode control for the laser.
15. The laser as recited in claim 12 , wherein the at least one patterned region is configured such that reflectivity of the resonant reflector is reduced in the at least one patterned region.
16. A laser, comprising:
a top layer; and
a resonant reflector disposed proximate the top layer and comprising:
a top mirror with a top mirror layer, the top mirror layer etched with a pattern extending partially into the top mirror layer so that at least one patterned region and at least one non-patterned region are formed, the at least one patterned region serving to reduce the reflectivity of the resonant reflector in the at least one patterned region; and
a cap mirror situated above at least one selected non-patterned region of the top mirror layer.
17. The laser as recited in claim 16 , wherein the at least one patterned region is configured to implement a phase shift, relative to the at least one non-patterned region.
18. The laser as recited in claim 16 , wherein the at least one patterned region is configured and arranged to facilitate mode control for the laser.
19. The laser as recited in claim 16 , wherein the top mirror layer includes at least one of: at least one period of a semiconductor DBR mirror; and, a narrow band dielectric reflection filter.
20. The laser as recited in claim 19 , wherein a non-patterned portion of the cap mirror substantially corresponds to a desired optical cavity of the laser.
21. The laser as recited in claim 16 , wherein the cap mirror includes at least one of: at least one period of a semiconductor DBR mirror; and, a narrow band dielectric reflection filter.
22. The laser as recited in claim 16 , wherein the at least one patterned region substantially circumscribes a desired optical cavity of the laser.
23. The laser as recited in claim 16 , further comprising a contact layer proximate the top mirror layer.
24. The laser as recited in claim 16 , further comprising a metal layer disposed on at least one selected region of the top mirror layer.
25. A vertical cavity surface-emitting laser (VCSEL), comprising:
a layer that at least partially defines an optical cavity having an optical axis; and
a resonant reflector layer extending across at least part of the optical cavity, the resonant reflector layer having a refractive index that does not abruptly change laterally across the optical cavity, the refractive index of the resonant reflector layer including contributions from a first material having a first refractive index and a second material having a second refractive index, at least one of the first material and the second material comprising a polymer.
26. The VCSEL as recited in claim 25 , wherein the first material is substantially confined to a first region and the second material is substantially confined to a second region, the first region and the second region co-extending along an interface, at least part of the interface being non-parallel with respect to the optical axis.
27. The VCSEL as recited in claim 25 , wherein the first refractive index is less than the second refractive index.
28. The VCSEL as recited in claim 25 , wherein the first material substantially comprises AlGaAs, and the second material substantially comprises a polymer.
29. The VCSEL as recited in claim 28 , wherein the polymer substantially comprises one of: polyimide; or, benzocyclobuthene (BCB).
30. The VCSEL as recited in claim 25 , wherein a reflectivity of the resonant reflector is at a maximum in a location proximate a center of the optical cavity.
31. The VCSEL as recited in claim 25 , wherein a reflectivity of the resonant reflector is substantially symmetric about a center of the optical cavity.
32. The VCSEL as recited in claim 25 , further comprising an additional layer disposed on top of the resonant reflector, the additional layer comprising one of: at least one period of a semiconductor DBR mirror; or, a narrow band dielectric reflection filter.
33. The VCSEL as recited in claim 25 , further comprising a contact layer arranged proximate a periphery of the optical cavity.
34. The VCSEL as recited in claim 25 , further comprising a mirror having a top mirror layer positioned adjacent to the resonant reflector layer.
35. The VCSEL as recited in claim 34 , wherein the top mirror layer has a refractive index that is greater than the first refractive index and the second refractive index.
36. The VCSEL as recited in claim 34 , wherein the top mirror layer substantially comprises AlGaAs.
37. A vertical cavity surface-emitting laser (VCSEL), comprising:
a layer that at least partially defines an optical cavity having an optical axis; and
a resonant reflector defined by two substantially planar opposing surfaces extending across at least a part of the optical cavity of the laser, the resonant reflector layer having a first region with a first refractive index and a second region with a second refractive index, the first region and the second region co-extending along an interface, at least part of the interface being non-parallel with respect to the optical axis.
38. The VCSEL as recited in claim 37 , wherein the first region is positioned proximate a center of the optical cavity and includes lateral edges that are non-parallel with respect to the optical axis, and the second region includes lateral edges that co-extend along the lateral edges of the first region.
39. A vertical cavity surface-emitting laser (VCSEL), comprising:
a top mirror layer having a thickness of an odd multiple of a quarter of a wavelength to which the VCSEL is tuned, the top mirror layer having at least one patterned region substantially circumscribing a desired optical cavity of the VCSEL, the at least one patterned region extending at least partly into the top mirror layer, and the top mirror layer further including at least one non-patterned region; and
a second layer disposed on the top mirror layer so that the second layer extends over at least a non-patterned region of the top mirror layer, the second layer having a refractive index less than a refractive index of the top mirror layer.
40. The VCSEL as recited in claim 39 , wherein the second layer extends over at least one patterned region of the top mirror layer.
41. The VCSEL as recited in claim 39 , further comprising an etch stop layer positioned below the top mirror layer.
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US7266135B2 (en) | 2000-12-29 | 2007-09-04 | Finisar Corporation | Method for producing laser with resonant reflector |
CN102820615A (en) * | 2011-06-06 | 2012-12-12 | 泰科电子瑞典控股有限责任公司 | High speed lasing device |
US11418009B2 (en) | 2018-03-08 | 2022-08-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Light emission device comprising at least one VCSEL and a spread lens |
Also Published As
Publication number | Publication date |
---|---|
WO2002059938A3 (en) | 2003-07-31 |
JP2004523896A (en) | 2004-08-05 |
DE60118974D1 (en) | 2006-05-24 |
US20020085610A1 (en) | 2002-07-04 |
US20080037606A1 (en) | 2008-02-14 |
AU2002246819A1 (en) | 2002-08-06 |
TW517417B (en) | 2003-01-11 |
US7760786B2 (en) | 2010-07-20 |
US6727520B2 (en) | 2004-04-27 |
US7266135B2 (en) | 2007-09-04 |
US20040191941A1 (en) | 2004-09-30 |
EP1352455B1 (en) | 2006-04-19 |
DE60118974T2 (en) | 2007-01-04 |
CA2433357A1 (en) | 2002-08-01 |
WO2002059938A2 (en) | 2002-08-01 |
KR20040018249A (en) | 2004-03-02 |
EP1352455A2 (en) | 2003-10-15 |
ATE323959T1 (en) | 2006-05-15 |
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