US20040169615A1 - Optical antenna array for harmonic generation, mixing and signal amplification - Google Patents

Optical antenna array for harmonic generation, mixing and signal amplification Download PDF

Info

Publication number
US20040169615A1
US20040169615A1 US10/646,945 US64694503A US2004169615A1 US 20040169615 A1 US20040169615 A1 US 20040169615A1 US 64694503 A US64694503 A US 64694503A US 2004169615 A1 US2004169615 A1 US 2004169615A1
Authority
US
United States
Prior art keywords
recited
lightwave
electromagnetic
conductor
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/646,945
Other versions
US7205021B2 (en
Inventor
Robert Crowley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOUNDWAVE RESEARCH LABORATORIES Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/988,801 external-priority patent/US6038060A/en
Priority to US10/646,945 priority Critical patent/US7205021B2/en
Application filed by Individual filed Critical Individual
Priority to US10/789,390 priority patent/US7099071B2/en
Publication of US20040169615A1 publication Critical patent/US20040169615A1/en
Priority to US10/791,668 priority patent/US7132994B2/en
Assigned to AMBIT CORPORATION reassignment AMBIT CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CROWLEY, ROBERT J.
Priority to US11/509,840 priority patent/US7259903B2/en
Priority to US11/509,833 priority patent/US20070015350A1/en
Priority to US11/509,839 priority patent/US7330299B2/en
Priority to US11/648,025 priority patent/US20070152832A1/en
Publication of US7205021B2 publication Critical patent/US7205021B2/en
Application granted granted Critical
Priority to US11/978,179 priority patent/US7535627B2/en
Priority to US11/978,242 priority patent/US7486434B2/en
Priority to US11/978,180 priority patent/US7899301B2/en
Priority to US11/978,144 priority patent/US20090052012A1/en
Priority to US12/322,011 priority patent/US20090168147A1/en
Priority to US12/798,634 priority patent/US8086079B2/en
Priority to US12/800,144 priority patent/US20100220385A1/en
Assigned to SOUNDWAVE RESEARCH LABORATORIES, INC reassignment SOUNDWAVE RESEARCH LABORATORIES, INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CROWLEY, ROBERT J. & HALGREN, DONALD N., DBA AMBIT CORP. OF MANCHESTER, MA
Assigned to SOUNDWAVE RESEARCH LABORATORIES, INC reassignment SOUNDWAVE RESEARCH LABORATORIES, INC TO CORRECT WRONG APPL# 12/978,634 REEL/FRAME 026698/0183 Assignors: ROBERT J. CROWLEY & DONALD N. HALGREN, DBA AMBIT CORP. OF MANCHESTER, MA.
Priority to US13/200,554 priority patent/US8922374B2/en
Adjusted expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3501Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/37Non-linear optics for second-harmonic generation
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0716Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising a sensor or an interface to a sensor
    • G06K19/0717Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising a sensor or an interface to a sensor the sensor being capable of sensing environmental conditions such as temperature history or pressure
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073Special arrangements for circuits, e.g. for protecting identification code in memory
    • G06K19/07309Means for preventing undesired reading or writing from or onto record carriers
    • G06K19/07345Means for preventing undesired reading or writing from or onto record carriers by activating or deactivating at least a part of the circuit on the record carrier, e.g. ON/OFF switches
    • GPHYSICS
    • G08SIGNALLING
    • G08BSIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00Burglar, theft or intruder alarms
    • G08B13/22Electrical actuation
    • G08B13/24Electrical actuation by interference with electromagnetic field distribution
    • G08B13/2402Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting
    • G08B13/2405Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting characterised by the tag technology used
    • G08B13/2414Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting characterised by the tag technology used using inductive tags
    • GPHYSICS
    • G08SIGNALLING
    • G08BSIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00Burglar, theft or intruder alarms
    • G08B13/22Electrical actuation
    • G08B13/24Electrical actuation by interference with electromagnetic field distribution
    • G08B13/2402Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting
    • G08B13/2405Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting characterised by the tag technology used
    • G08B13/2414Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting characterised by the tag technology used using inductive tags
    • G08B13/2417Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting characterised by the tag technology used using inductive tags having a radio frequency identification chip
    • GPHYSICS
    • G08SIGNALLING
    • G08BSIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00Burglar, theft or intruder alarms
    • G08B13/22Electrical actuation
    • G08B13/24Electrical actuation by interference with electromagnetic field distribution
    • G08B13/2402Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting
    • G08B13/2428Tag details
    • G08B13/2437Tag layered structure, processes for making layered tags
    • G08B13/244Tag manufacturing, e.g. continuous manufacturing processes
    • GPHYSICS
    • G08SIGNALLING
    • G08BSIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00Burglar, theft or intruder alarms
    • G08B13/22Electrical actuation
    • G08B13/24Electrical actuation by interference with electromagnetic field distribution
    • G08B13/2402Electronic Article Surveillance [EAS], i.e. systems using tags for detecting removal of a tagged item from a secure area, e.g. tags for detecting shoplifting
    • G08B13/2428Tag details
    • G08B13/2437Tag layered structure, processes for making layered tags
    • G08B13/2442Tag materials and material properties thereof, e.g. magnetic material details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/248Supports; Mounting means by structural association with other equipment or articles with receiving set provided with an AC/DC converting device, e.g. rectennas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/28Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using a secondary device in the form of two or more substantially straight conductive elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/2676Optically controlled phased array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H01Q3/46Active lenses or reflecting arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/16Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/44Resonant antennas with a plurality of divergent straight elements, e.g. V-dipole, X-antenna; with a plurality of elements having mutually inclined substantially straight portions
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3501Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
    • G02F1/3509Shape, e.g. shape of end face
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/353Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
    • G02F1/3556Semiconductor materials, e.g. quantum wells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/36Micro- or nanomaterials
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/15Function characteristic involving resonance effects, e.g. resonantly enhanced interaction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/724Devices having flexible or movable element
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/734Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742Carbon nanotubes, CNTs
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949Radiation emitter using nanostructure
    • Y10S977/95Electromagnetic energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913Rod, strand, filament or fiber
    • Y10T428/2933Coated or with bond, impregnation or core
    • Y10T428/2935Discontinuous or tubular or cellular core

Definitions

  • This invention relates to small aligned conductors and junctions configured to efficiently admit, modify and emit electromagnetic radiation around light wavelengths.
  • Optical materials employing microstructures that exhibit the property of birefringence are commonly used to generate harmonic energy around light wavelengths. These materials are useful for frequency doubling, tripling or multiplying one or more fundamental inputs. Layered crystal structures are known to exhibit practical nonlinear transmission of light energy that usually result in harmonic generation with efficiencies that are generally low. Attempts have been made to optimize the harmonic generating efficiency of various materials by orienting molecules sandwiched between substrate materials. In U.S. Pat. No. 5,589,235, an applied magnetic field is used to pre-align molecules, and then a source of radiation is used to cross-link the molecules so that they maintain their position after the magnetic field is removed.
  • U.S. Pat. No. 5,380,410 describes a method by which periodic electrodes may be fabricated to provide inversion regions that improve the efficiency of a ferroelectric material which exhibits an intrinsic nonlinear optical property.
  • the fabrication of a nonlinear optical region or layer on a material that generally has inherently linear characteristics is disclosed in U.S. Pat. No. 5,157,674 which teaches a process by which a charge transfer dopant is introduced to produce a semiconducting region on a bulk glass or microcrystalline substrate.
  • radio frequency nonlinear harmonic generating materials An important aspect of successful fabrication and use of radio frequency nonlinear harmonic generating materials is the ability to control the orientation and sizes of those elements with respect to various electromagnetic fields. This is possible since radio frequency waves, and even microwaves, are relatively long. Developers of nonlinear, harmonic-producing devices for radio wave applications have been able to successfully fabricate numerous circuits, cavities, transmission lines, junctions and other structures scaled to radio wavelengths. This practice has been extended over time to include VHF, UHF, microwave and so-called millimeter wave regimes, and has included discrete components, transmission lines and antenna systems that have been scaled down to operate optimally at ever-higher frequencies.
  • junctions are capable of rectification, mixing, detection and amplification over a portion of the full cycle of the alternating current, electromagnetic wave energy, and include conventional diodes, Shottky diodes, tunnel diodes, transistors, field effect transistors, bipolar transistors including discrete components and mass array fabricated devices such as integrated circuits and linear and two dimensional arrays.
  • junctions, elements and conductors could be fabricated that operate in the regime of light wavelengths in a way that made them efficient, repeatable and manufacturable. It would be desirable if these junctions, elements or conductors were configurable to provide efficient nonlinear transfer characteristics that could be used for generating harmonics, mixing, modulation, frequency multiplication, and amplification of lightwave signals in addition to more linear antenna-like properties such as resonance, charge storage and reradiation of electromagnetic field energy. Many useful applications would be found for the successful highly efficient nonlinear optical material, device or technique that could convert infrared energy to visible lightwave energy and to ultraviolet lightwave energy in an efficient manner. It would be particularly desirable if the devices could be produced quickly and inexpensively, and if their characteristics could be controlled effectively using known manufacturing process control techniques.
  • the invention features a light responsive electromagnetic conductor placed in electrical contact with a junction exhibiting polar, nonlinear electrical transfer characteristics.
  • the invention allows conversion of radiant light frequency energy to a conducted electron charge transfer across a semiconducting junction, and subsequent conversion and reradiation of a portion of the energy to lightwave energy at a multiple of the light frequency.
  • a method of generating harmonic energy near light wavelengths comprising the steps of exposing a conductor to an infrared, visible or ultraviolet electromagnetic light energy having an alternating waveform, inducing a current with electromagnetic energy in the conductor to cause an electrical charge to cross a junction, and emitting at least a portion of the energy at a harmonic multiple of the light energy.
  • the invention relates to the use of a substrate material to support carbon nanotubes which are used as frequency selective electrical conductors.
  • the conductors are polarized with respect to the substrate.
  • a foraminous substrate is used to influence and support the orientation of the electrical conductors.
  • the foraminous substrate supports a nanoparticle which creates at least a portion of a nonlinear electrical junction.
  • the invention relates to a conductive element with a non-linear charge transfer region that is small with respect to that element.
  • the invention relates to an antenna structure that admits and radiates at light wavelengths.
  • a lightwave electromagnetic antenna having a linear conductor is attached to a substrate material, with the linear conductor having an electrical length sized to respond to an electromagnetic light wavelength.
  • the invention relates to antennas with conducting elements of less than 2000 nanometers in length that operate near light wavelengths.
  • the conductors form a traveling wave structure.
  • the conductors are arranged to form a log periodic structure.
  • the invention relates to a conductive element with an electrical length about a multiple of 1 ⁇ 4 wavelength of a light wavelength.
  • the electrical length of the conductor inclusive of a junction may be about 600 nanometers corresponding to 1 ⁇ 2 wavelength of infrared light. Impinging infrared light energy is collected, rectified and reradiated at a multiple of the infrared light frequency with high efficiency.
  • the electrical lengths of the conductor may be in a range from about 20 nanometers to about 2000 nanometers corresponding to ultraviolet, visible and infrared light.
  • the lengths of the conductors may be staggered to form a broadband structure.
  • the conductors are arranged in a generally parallel relationship.
  • the invention relates to an array of conductive elements with electrical lengths around a multiple of 1 ⁇ 4 wavelength of light, arranged so that at least one optical port and at least one electrical port, are held in communication via a nonlinear junction.
  • the electrical port is a terminal on a optical device which modifies a charge transfer characteristic of a junction.
  • a device for rectifying an alternating waveform occurring around light wavelengths is comprised of a short conductor of less than 10,000 nanometers in length and a nonlinear region with an electrical length less than the light wavelength.
  • the nonlinear junction region consists of a nanoparticle.
  • the junction is a polarized, doped region with an electrical length shorter than 1 ⁇ 2 of the light wavelength.
  • the invention relates to the process by which the growth of lightwave antenna elements upon a substrate may be controlled by observation of an optical property.
  • various lengths of nanotubes are grown in a controlled manner upon the substrate.
  • FIG. 1 is a side view of a prior art radio frequency dipole antenna with a center diode junction shown in relation to a signal generator and a signal receiver located in space around the antenna.
  • FIG. 1 a is a perspective view of a prior art radio frequency theft control tag.
  • FIG. 2 is a cross-section of a foraminous substrate material structure with nanoparticles.
  • FIG. 3 is a partial cross-section of a foramninous substrate material with nanoparticles and linear elements disposed at right angles to the substrate.
  • FIG. 4 is a partial cross-section of a light modifying device with arranged linear elements of approximately equal lengths joined at a substrate and a terminal attached to the substrate.
  • FIG. 4 a is a partial cross-section of a light modifying device in which linear elements are of various lengths along the length of a substrate material.
  • FIG. 4 b is a partial cross-section of a light modifying device in which linear element lengths are tapered with respect to each other and a substrate material.
  • FIG. 5 is a cross-section of a light modifying device in which the substrate with linear elements are disposed with respect to an electrical terminal and two optical windows to form a 3 port system.
  • FIG. 5 a is a schematic diagram of the light modifying device of FIG. 5 in which lightwave energy is admitted and transmitted after undergoing frequency conversion, mixing or amplification.
  • a prior art radio frequency dipole antenna 1 is shown as it is used in many forms of radio communications and shown particularly in this case for illustrating one common use and technique for harmonic generation and reradiation.
  • Such antennas ordinarily comprise two 1 ⁇ 4 wave sections joined at or near the center and may include a nonlinear diode junction 2 connected therebetween.
  • a 1 ⁇ 2 wave antenna has desirable properties that efficiently pick up and radiates radio frequency energy, and therefore the so-called dipole antenna is considered to be a basic building block in the antenna art.
  • This desirable antenna property is generally known as resonance, and it should be understood that there are other lengths of conductors that exhibit resonant effects as a function of frequency and length.
  • An alarm system for theft control purposes may be constructed with such an antenna and a transmitter 3 operating at frequency n, and a receiver 4 , tuned to listen for signal(s) at frequency 2 n .
  • a changing electrical field induces a current which travels through the length of that antenna.
  • that field would reverse in the case of linear operation (no diode) of the antenna elements, but in this case the presence of the nonlinear diode junction 2 partway through the element creates a conductance change part way through the conduction cycle which limits and distorts the ordinarily linear current flow and converts it into a nonlinear, non-sinusoidal waveform.
  • Nonlinear waveforms contain harmonic energy and may be described by transform equations which are based on Fourier's Theory of Trigonometric Series which among other things show that all components of a given waveform are comprised of at least one-or more sinusoidal waveforms that are mathematically related. Some of the harmonic energy is reradiated into space and may be picked up by nearby receiver 4 , which may then sound an alarm.
  • a typical transmitted signal may be 1000 MHz.
  • the electrical length of the dipole antenna may be one-half of the wave length of 1000 MHz, which in free space is approximately 30 centimeters, resulting in a corresponding half-wave dipole structure of about 15 centimeters long.
  • FIG. 1A a prior art radio frequency theft control tag of which tag 5 is comprised of a thin conductor 6 and a small diode 7 mounted within a flat plastic housing or substrate 8 .
  • the thin conductor 6 may be a foil shaped to form one or more dipole antenna lengths in parallel which may be harmonically related as a function of electrical length, therefore the dipole antenna 1 previously shown in FIG. 1 may be modified so that it reradiates even more efficiently at double the input frequency.
  • a typical theft control tag system may operate at about 5000 MHz, which corresponds to a wavelength of about 6 centimeters and a corresponding half-wave dipole length of about 3 centimeters.
  • a transmitter may be placed that emits at 5000 MHz, and a receiver may be placed that listens at 10,000 MHz, or twice the frequency.
  • These frequencies are just one example of a phenomenon that is observable at all electromagnetic wavelengths but that has not been put to use in light wave regimes because materials could not be fabricated, nor has it been apparent that ordinary radio wave practices could be usefully applied in such a way to very short wavelengths such as those associated with light wavelengths.
  • a foraminous substrate material structure with nanoparticles, substrate material 11 is comprised of silica, silicon or other material that may insulate or partially conduct and which may be made foramninous in a controlled, predetermined manner. Depressions 13 may extend partially into the substrate material or apertures 15 may extend through the thickness of the substrate.
  • the foraminous substrate structure may be made by leaching the silica with the sol-gel process (not shown) which produces mesoporous silica, and may alternatively be used to produce a controlled foraminous surface in silicon, which is a semiconductor, or gallium arsenide, for example.
  • doped region 17 may be produced by processing known in conventional transistor material fabrication practice.
  • the doped region 17 may be effective to render some or all of the region on the substrate more or less polarized with respect to electrical charge or current transport across that region.
  • the region 17 may extend into depressions 13 or apertures 15 .
  • Iron nanopaiticles 19 may be produced in the substrate by the method of depositing a finely ground iron oxide dust (not shown) in the porous substrate and then by reducing the iron oxide by heating the substrate to a temperature of about 550 degrees centigrade in 180 torr of flowing H 2 N 2 for approximately 5 hours. The remaining reduced metal leaves the residual nanoparticle 19 that may be embedded in the substrate.
  • the substrate itself should be thin.
  • the thinnest substrates may be in a range of 200 nanometers or less and many be produced by tapering the edge of a thin section of substrate material down to a near molecular edge by acid etching, drawing, or other ablative process.
  • thin sections may be produced in thicker areas by ablative methods such as spark erosion or laser ablation, the advantage being that a stronger surrounding support structure may be formed around a very thin active area of the substrate.
  • oxides of metals such as iron are commonly known to have semiconducting properties and therefore may form part of a semiconducting junction.
  • the small size of these particular nanoparticles makes them suitable for junctions that are electrically short enough to operate effectively at very high frequencies, including light frequencies since they are small relative to light wavelengths.
  • a typical red light wavelength may be around 600 nanometers, and an iron nanoparticle may be less than 100 nanometers and typically may be in the range of 10 to 30 nanometers average diameter.
  • a prepared substrate 11 with embedded nanoparticles 19 may be supplied with acetylene-fed carbon nanotubes 21 extending from depressions 13 or apertures 15 .
  • the mechanism of nanotube generation and growth in a prepared foraminous substance appears to involve a process in which particles act like seeds for the initiation of nanotube growth, and that the orientation and direction of the initiated nanotube growth is then influenced by the orientations of the depressions and apertures, which may simply serve as guides at the early stage of growth.
  • Other forces and influences such as a static electric field, a magnetic field, or the application of various electromagnetic fields such as radio wave energy and lightwave energy, may also influence the orientation and growth process.
  • the apparatus to grow nanotubes consists of a chamber (not shown) into which acetylene is introduced and burned incompletely which creates soot.
  • the soot is comprised of regularly shaped carbon atoms which have been observed to self assemble into the nanotube configuration.
  • the length L of the nanotube may be controlled by regulating the time allowed for growth.
  • the average length of the nanotube or nanotubes may be monitored by measuring the light absorption characteristics during the growth process which change as the tube grows.
  • the tube lengthens it admits longer wavelengths according to a relationship known in electromagnetic theory in which the propagation time of the electric charge across a body determines its electrical length and its admittance or ability to preferentially absorb and/or radiate at a specific wavelength.
  • each side of the substrate may have an approximately 1 ⁇ 4 wavelength long conductor, and is most responsive to a wavefront that propagates in a direction that is perpendicular to the broad side of the conductors.
  • Conductor lengths L that correspond to 1 ⁇ 4 wavelength from ultraviolet, through the visible and to infrared light may have a range from about 60 nanometers to about 10000 nanometers may be accomplished using current techniques.
  • the axial relationship of the two 1 ⁇ 4 wavelength conductor set 25 and their more-or-less perpendicular disposition relative to the substrate make this array polarization sensitive to lightwave energy.
  • a higher current and lower voltage may be observed near the center of a resonant dipole arrangement in accordance with the conventional antenna art. It may be desirable to raise the voltage near the junction which may be accomplished either by adjusting the length of the antenna element or by placing the junction off center.
  • 1 ⁇ 2 wavelength resonant antennas exhibit current minima and voltage maxim at the ends of the conductors, therefore, it may be desirable to approach lengths of 1 ⁇ 2 wavelength on each side of the substrate thereby producing a resonant structure about at about one full wavelength.
  • a paited junction 23 may be constructed by growing two opposing nanotubes from one iron particle with the advantage of better electrical length control and less dependence upon substrate thickness to define the length of the structure.
  • an optical antenna array 26 has paired junctions 23 and conductor sets 25 of approximately equal lengths joined at substrate 11 .
  • Electrical terminal 27 is bonded to the substrate 11 by bond 29 which may be in electrical communication with either doped or undoped regions of the substrate.
  • Application of a current to terminal 27 is effective to bias the electrical transport properties of the assembly.
  • Application of an alternating waveform is effective to modulate the transport properties across the optical antenna array 26 in a periodic manner which causes it to act in a way that is similar to a diode switch or mixer arrangement as commonly encountered in the electrical and radio art. Since the inherent transport properties across the optical antenna array 26 are nonlinear, mixing and superimposition of the modulating electrical waveform with the light waveform is produced. Conversely, variations in the amplitude or phase of the light waveform are effective to influence the electrical port. These may produce sum and difference signals through the various processes known as heterodyning and modulating, and may result in an amplification or increase of the total power realized.
  • the optical antenna array 26 is supplied with staggered conductor sets 31 disposed upon substrate 11 .
  • the lengths of the antenna or conductor elements are effective to enhance reradiation at certain wavelengths of-operation.
  • two, three or more wavelengths may be selectively admitted and radiated depending upon the mix and distribution of element lengths. Best efficiency is obtained when the radiated energy is harmonically related to admitted energy. Practical devices with bandwidths broad enough to admit and radiate over a wide range of wavelengths are accommodated with this construction.
  • the process of particle deposition and nanotube growth may be repeated multiple times on a single substrate since the material C 60 can withstand considerable thermal cycling without damage.
  • an optical antenna array 26 is patterned after a commonly known antenna type known as a log-periodic dipole array. Tapered length conductor sets 25 are effective to operate over a wide range of wavelengths, and coupling of the electromagnetic fields between adjacent elements is effective to selectively reinforce wave propagation so that a directional preference of the optical antenna array 26 is obtained.
  • the log-periodic dipole array is merely exemplary; other antenna types include, but are not limited to, dipole, Yagi-Uda, collinear, phased array, rhombic or other structures that are known to radiate and admit electromagnetic energy in accordance with the antenna art, and conductors that are scaled and positioned with regard to the wavelengths of electromagnetic energy involved which may include transmission line structures comprised of more or less linear conductors.
  • an optical antenna array device 42 encloses the optical antenna array 26 which is mounted in a tubular holder 43 by means of a mounting plate 41 .
  • the holder may be made from machined aluminum which may have an outside diameter of about 1 mm and an inside diameter of about 0.25 mm or less. Larger or smaller structures may be constructed within the scope of the invention.
  • a coating of aluminum 45 is deposited in center bore of holder 43 by a vacuum metalization process. The coating acts like a mirror which helps direct light from window 53 to and from the optical antenna array 26 .
  • Electrical wire 47 is brought out through insulator 49 to terminal 51 for the purpose of attaching and electronic device such as art oscillator, a receiver, a spectrum analyzer, a pulse generator, an amplifier, a power supply or the like to electrical terminal 27 .
  • FIG. 5 a the operation of the optical antenna array device 42 is shown in block diagram form.
  • Light source 61 ( ⁇ ) shines light beam 63 into holder 43 and onto mounting plate 41 carrying the optical antenna array 26 .
  • the glancing angle of the light beam against the inside of the holder helps avoid a condition where all the light energy wave front is entirely perpendicular to the plane of the substrate.
  • Mounting plate 41 may alternatively be positioned diagonally in holder 43 so that light energy propagates in a direction that is generally broadside to the long axes of the carbon nanotubes 21 , as shown in FIG. 4, which are aligned with a generally perpendicular orientation with respect to the substrate material 11 .
  • light beam 63 may interact with optical antenna array 26 which may produce reflected beam 65 ( ⁇ /2) at least a portion of which contains high levels of second, third or higher order harmonic energy.
  • transmitted beam 67 ( ⁇ /2) may interact with optical antenna array 26 which generates significant harmonic energy and propagates in a direction generally opposite light beam 63 .
  • Some isolation is afforded by the light loss that occurs at the optical antenna array 26 so that a plurality of light beams of different wavelengths may be introduced simultaneously, and their products may be detected at terminal 51 .
  • Polarization and isolation may be enhanced by the use of polarizing filters (not shown) and magnetic rings (also not shown) attached to one or more ends of holder 43 .

Abstract

An optical antenna collects, modifies and emits energy at light wavelengths. Linear conductors sized to correspond to the light wavelengths are used. Nonlinear junctions of small dimension are used to rectify an alternating waveform induced upon the conductors by the lightwave electromagnetic energy. The optical antenna and junctions are effective to produce harmonic energy at light wavelengths. The linear conductors may be comprised of carbon nanotubes that are attached to a substrate material, which may then be connected to an electrical port.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This is based on U.S. provisional patent application by Robert J. Crowley, serial No. 60/036,085, filed on Jan. 16, 1997.[0001]
  • TECHNICAL FIELD
  • This invention relates to small aligned conductors and junctions configured to efficiently admit, modify and emit electromagnetic radiation around light wavelengths. [0002]
  • BACKGROUND INFORMATION
  • Optical materials employing microstructures that exhibit the property of birefringence are commonly used to generate harmonic energy around light wavelengths. These materials are useful for frequency doubling, tripling or multiplying one or more fundamental inputs. Layered crystal structures are known to exhibit practical nonlinear transmission of light energy that usually result in harmonic generation with efficiencies that are generally low. Attempts have been made to optimize the harmonic generating efficiency of various materials by orienting molecules sandwiched between substrate materials. In U.S. Pat. No. 5,589,235, an applied magnetic field is used to pre-align molecules, and then a source of radiation is used to cross-link the molecules so that they maintain their position after the magnetic field is removed. In another attempt to fabricate a device that exhibits high harmonic generating efficiency, U.S. Pat. No. 5,380,410 describes a method by which periodic electrodes may be fabricated to provide inversion regions that improve the efficiency of a ferroelectric material which exhibits an intrinsic nonlinear optical property. The fabrication of a nonlinear optical region or layer on a material that generally has inherently linear characteristics is disclosed in U.S. Pat. No. 5,157,674 which teaches a process by which a charge transfer dopant is introduced to produce a semiconducting region on a bulk glass or microcrystalline substrate. [0003]
  • One apparent drawback to these approaches is wavelength-dependent attenuation. This attenuation occurs when lightwave energy propagates through lossy materials, resulting in attenuation. In general, both polymer and glass substrate materials exhibit high attenuation through absorption in the near UV and UV regions. Microcrystalline materials that utilize birefringence generally must have sufficient light path propagation length to produce sufficient phase changes for significant harmonic generation. Longer path lengths usually result in even greater attenuation. [0004]
  • Researchers have had to resort to modification of bulk materials or orientation of molecules in a solution or matrix to produce structures that exhibit optical nonlinearity, and usable harmonic generation. These researchers have not been able to successfully utilize practices that are now common in the electromagnetic radio electronics fields, even though light waves are merely electromagnetic waves of short wavelengths, primarily because techniques and materials for the fabrication of practical electromagnetically responsive elements in the small sizes necessary for efficient use at light wavelengths in the ranges of 10,000 nanometers and shorter are not available. Optical crystal materials and composite materials, due to their structure, make it difficult to optimize the orientation of individual electromagnetically responsive elements. [0005]
  • An important aspect of successful fabrication and use of radio frequency nonlinear harmonic generating materials is the ability to control the orientation and sizes of those elements with respect to various electromagnetic fields. This is possible since radio frequency waves, and even microwaves, are relatively long. Developers of nonlinear, harmonic-producing devices for radio wave applications have been able to successfully fabricate numerous circuits, cavities, transmission lines, junctions and other structures scaled to radio wavelengths. This practice has been extended over time to include VHF, UHF, microwave and so-called millimeter wave regimes, and has included discrete components, transmission lines and antenna systems that have been scaled down to operate optimally at ever-higher frequencies. [0006]
  • Designers have also been able to fabricate nonlinear junctions that are small with respect to the wavelengths involved. These junctions are capable of rectification, mixing, detection and amplification over a portion of the full cycle of the alternating current, electromagnetic wave energy, and include conventional diodes, Shottky diodes, tunnel diodes, transistors, field effect transistors, bipolar transistors including discrete components and mass array fabricated devices such as integrated circuits and linear and two dimensional arrays. [0007]
  • It would be logical to extend this practice into infrared, lightwave and ultraviolet regimes if the materials, designs, and techniques needed to accomplish these developments could be understood and executed. Work toward this goal is proceeding today with limited success. It has been suggested that carbon nanotubes, also known as C[0008] 60 or fullerene structures, could be used as part of such electronic devices that would operate efficiently in the optical domain. Researchers have had limited success with films of C60 that have appeared to have properties that are both electronic and optical, and initial attempts at producing components have been made using layered, deposited and more-or-less random length coatings of this and other polymeric conductive materials, but efficiencies, though improved, are still not optimized, and design criteria for practical devices are still not developed.
  • It would be desirable if junctions, elements and conductors could be fabricated that operate in the regime of light wavelengths in a way that made them efficient, repeatable and manufacturable. It would be desirable if these junctions, elements or conductors were configurable to provide efficient nonlinear transfer characteristics that could be used for generating harmonics, mixing, modulation, frequency multiplication, and amplification of lightwave signals in addition to more linear antenna-like properties such as resonance, charge storage and reradiation of electromagnetic field energy. Many useful applications would be found for the successful highly efficient nonlinear optical material, device or technique that could convert infrared energy to visible lightwave energy and to ultraviolet lightwave energy in an efficient manner. It would be particularly desirable if the devices could be produced quickly and inexpensively, and if their characteristics could be controlled effectively using known manufacturing process control techniques. [0009]
  • SUMMARY OF THE INVENTION
  • The invention features a light responsive electromagnetic conductor placed in electrical contact with a junction exhibiting polar, nonlinear electrical transfer characteristics. The invention allows conversion of radiant light frequency energy to a conducted electron charge transfer across a semiconducting junction, and subsequent conversion and reradiation of a portion of the energy to lightwave energy at a multiple of the light frequency. In one aspect, a method of generating harmonic energy near light wavelengths is described comprising the steps of exposing a conductor to an infrared, visible or ultraviolet electromagnetic light energy having an alternating waveform, inducing a current with electromagnetic energy in the conductor to cause an electrical charge to cross a junction, and emitting at least a portion of the energy at a harmonic multiple of the light energy. [0010]
  • In one aspect, the invention relates to the use of a substrate material to support carbon nanotubes which are used as frequency selective electrical conductors. In one embodiment, the conductors are polarized with respect to the substrate. In another embodiment, a foraminous substrate is used to influence and support the orientation of the electrical conductors. In another embodiment, the foraminous substrate supports a nanoparticle which creates at least a portion of a nonlinear electrical junction. In another aspect, the invention relates to a conductive element with a non-linear charge transfer region that is small with respect to that element. [0011]
  • In one aspect, the invention relates to an antenna structure that admits and radiates at light wavelengths. In another aspect, a lightwave electromagnetic antenna having a linear conductor is attached to a substrate material, with the linear conductor having an electrical length sized to respond to an electromagnetic light wavelength. In another aspect, the invention relates to antennas with conducting elements of less than 2000 nanometers in length that operate near light wavelengths. In one embodiment, the conductors form a traveling wave structure. In another embodiment, the conductors are arranged to form a log periodic structure. [0012]
  • In another aspect, the invention relates to a conductive element with an electrical length about a multiple of ¼ wavelength of a light wavelength. In one embodiment, the electrical length of the conductor inclusive of a junction may be about 600 nanometers corresponding to ½ wavelength of infrared light. Impinging infrared light energy is collected, rectified and reradiated at a multiple of the infrared light frequency with high efficiency. In another embodiment, the electrical lengths of the conductor may be in a range from about 20 nanometers to about 2000 nanometers corresponding to ultraviolet, visible and infrared light. In one embodiment, the lengths of the conductors may be staggered to form a broadband structure. In one embodiment, the conductors are arranged in a generally parallel relationship. [0013]
  • In another aspect, the invention relates to an array of conductive elements with electrical lengths around a multiple of ¼ wavelength of light, arranged so that at least one optical port and at least one electrical port, are held in communication via a nonlinear junction. In one embodiment, the electrical port is a terminal on a optical device which modifies a charge transfer characteristic of a junction. In one embodiment, a device for rectifying an alternating waveform occurring around light wavelengths is comprised of a short conductor of less than 10,000 nanometers in length and a nonlinear region with an electrical length less than the light wavelength. In another embodiment, the nonlinear junction region consists of a nanoparticle. In another embodiment, the junction is a polarized, doped region with an electrical length shorter than ½ of the light wavelength. [0014]
  • In another aspect, the invention relates to the process by which the growth of lightwave antenna elements upon a substrate may be controlled by observation of an optical property. In one embodiment, various lengths of nanotubes are grown in a controlled manner upon the substrate. [0015]
  • The foregoing and other objects, aspects, features, and advantages of the invention will become more apparent from the following description and from the claims. [0016]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis being placed upon illustrating the principles of the invention. [0017]
  • FIG. 1 is a side view of a prior art radio frequency dipole antenna with a center diode junction shown in relation to a signal generator and a signal receiver located in space around the antenna. [0018]
  • FIG. 1[0019] a is a perspective view of a prior art radio frequency theft control tag.
  • FIG. 2 is a cross-section of a foraminous substrate material structure with nanoparticles. [0020]
  • FIG. 3 is a partial cross-section of a foramninous substrate material with nanoparticles and linear elements disposed at right angles to the substrate. [0021]
  • FIG. 4 is a partial cross-section of a light modifying device with arranged linear elements of approximately equal lengths joined at a substrate and a terminal attached to the substrate. [0022]
  • FIG. 4[0023] a is a partial cross-section of a light modifying device in which linear elements are of various lengths along the length of a substrate material.
  • FIG. 4[0024] b is a partial cross-section of a light modifying device in which linear element lengths are tapered with respect to each other and a substrate material.
  • FIG. 5 is a cross-section of a light modifying device in which the substrate with linear elements are disposed with respect to an electrical terminal and two optical windows to form a 3 port system. [0025]
  • FIG. 5[0026] a is a schematic diagram of the light modifying device of FIG. 5 in which lightwave energy is admitted and transmitted after undergoing frequency conversion, mixing or amplification.
  • DESCRIPTION
  • Referring to FIG. 1, a prior art radio frequency dipole antenna [0027] 1 is shown as it is used in many forms of radio communications and shown particularly in this case for illustrating one common use and technique for harmonic generation and reradiation. Such antennas ordinarily comprise two ¼ wave sections joined at or near the center and may include a nonlinear diode junction 2 connected therebetween. It is known that a ½ wave antenna has desirable properties that efficiently pick up and radiates radio frequency energy, and therefore the so-called dipole antenna is considered to be a basic building block in the antenna art. This desirable antenna property is generally known as resonance, and it should be understood that there are other lengths of conductors that exhibit resonant effects as a function of frequency and length. An alarm system for theft control purposes may be constructed with such an antenna and a transmitter 3 operating at frequency n, and a receiver 4, tuned to listen for signal(s) at frequency 2 n. When transmitted signal n impinges upon the antenna 1, a changing electrical field induces a current which travels through the length of that antenna. Ordinarily that field would reverse in the case of linear operation (no diode) of the antenna elements, but in this case the presence of the nonlinear diode junction 2 partway through the element creates a conductance change part way through the conduction cycle which limits and distorts the ordinarily linear current flow and converts it into a nonlinear, non-sinusoidal waveform. Nonlinear waveforms contain harmonic energy and may be described by transform equations which are based on Fourier's Theory of Trigonometric Series which among other things show that all components of a given waveform are comprised of at least one-or more sinusoidal waveforms that are mathematically related. Some of the harmonic energy is reradiated into space and may be picked up by nearby receiver 4, which may then sound an alarm. A typical transmitted signal may be 1000 MHz. In this case, the electrical length of the dipole antenna may be one-half of the wave length of 1000 MHz, which in free space is approximately 30 centimeters, resulting in a corresponding half-wave dipole structure of about 15 centimeters long.
  • Referring now to FIG. 1A, a prior art radio frequency theft control tag of which tag [0028] 5 is comprised of a thin conductor 6 and a small diode 7 mounted within a flat plastic housing or substrate 8. The thin conductor 6 may be a foil shaped to form one or more dipole antenna lengths in parallel which may be harmonically related as a function of electrical length, therefore the dipole antenna 1 previously shown in FIG. 1 may be modified so that it reradiates even more efficiently at double the input frequency. A typical theft control tag system may operate at about 5000 MHz, which corresponds to a wavelength of about 6 centimeters and a corresponding half-wave dipole length of about 3 centimeters. Therefore a transmitter may be placed that emits at 5000 MHz, and a receiver may be placed that listens at 10,000 MHz, or twice the frequency. These frequencies are just one example of a phenomenon that is observable at all electromagnetic wavelengths but that has not been put to use in light wave regimes because materials could not be fabricated, nor has it been apparent that ordinary radio wave practices could be usefully applied in such a way to very short wavelengths such as those associated with light wavelengths.
  • Recently, large-scale synthesis of aligned carbon nanotubes has been demonstrated at the Chinese Academy of Sciences in Beijing by Li, et al. These structures can be grown on a substrate of foraminous silica and have lengths in the range of up to about 50 micrometers long. Carbon nanotubes are conductive structures with high length-to-diameter ratios, and it has been found that that these exhibit some nonlinear optical effects. It has been suggested that carbon nanotubes may be used for numerous optical purposes but none in a way that utilize ordinary radio wave antenna techniques scaled to light wavelengths. [0029]
  • Referring now to FIG. 2, a foraminous substrate material structure with nanoparticles, substrate material [0030] 11 is comprised of silica, silicon or other material that may insulate or partially conduct and which may be made foramninous in a controlled, predetermined manner. Depressions 13 may extend partially into the substrate material or apertures 15 may extend through the thickness of the substrate. The foraminous substrate structure may be made by leaching the silica with the sol-gel process (not shown) which produces mesoporous silica, and may alternatively be used to produce a controlled foraminous surface in silicon, which is a semiconductor, or gallium arsenide, for example. If the substrate material 11 is of a dopable semiconducting material, doped region 17 may be produced by processing known in conventional transistor material fabrication practice. The doped region 17 may be effective to render some or all of the region on the substrate more or less polarized with respect to electrical charge or current transport across that region. The region 17 may extend into depressions 13 or apertures 15. Iron nanopaiticles 19 may be produced in the substrate by the method of depositing a finely ground iron oxide dust (not shown) in the porous substrate and then by reducing the iron oxide by heating the substrate to a temperature of about 550 degrees centigrade in 180 torr of flowing H2N2 for approximately 5 hours. The remaining reduced metal leaves the residual nanoparticle 19 that may be embedded in the substrate. The substrate itself should be thin. The thinnest substrates may be in a range of 200 nanometers or less and many be produced by tapering the edge of a thin section of substrate material down to a near molecular edge by acid etching, drawing, or other ablative process. Alternatively, thin sections may be produced in thicker areas by ablative methods such as spark erosion or laser ablation, the advantage being that a stronger surrounding support structure may be formed around a very thin active area of the substrate.
  • It is important to point out that oxides of metals such as iron are commonly known to have semiconducting properties and therefore may form part of a semiconducting junction. The small size of these particular nanoparticles makes them suitable for junctions that are electrically short enough to operate effectively at very high frequencies, including light frequencies since they are small relative to light wavelengths. A typical red light wavelength may be around 600 nanometers, and an iron nanoparticle may be less than 100 nanometers and typically may be in the range of 10 to 30 nanometers average diameter. [0031]
  • Referring to FIG. 3, a prepared substrate [0032] 11 with embedded nanoparticles 19 may be supplied with acetylene-fed carbon nanotubes 21 extending from depressions 13 or apertures 15. The mechanism of nanotube generation and growth in a prepared foraminous substance appears to involve a process in which particles act like seeds for the initiation of nanotube growth, and that the orientation and direction of the initiated nanotube growth is then influenced by the orientations of the depressions and apertures, which may simply serve as guides at the early stage of growth. Other forces and influences such as a static electric field, a magnetic field, or the application of various electromagnetic fields such as radio wave energy and lightwave energy, may also influence the orientation and growth process. In particular, the application of a static electric field to the substrate and subsequent charging of the growing nanotubes may improve separation and aid in the regularity and evenness of the separation of individual strands through the mutual repulsion force resulting from an adjacent like charge. The apparatus to grow nanotubes consists of a chamber (not shown) into which acetylene is introduced and burned incompletely which creates soot. The soot is comprised of regularly shaped carbon atoms which have been observed to self assemble into the nanotube configuration.
  • Still referring to FIG. 3, the length L of the nanotube may be controlled by regulating the time allowed for growth. The average length of the nanotube or nanotubes may be monitored by measuring the light absorption characteristics during the growth process which change as the tube grows. Generally, as the tube lengthens it admits longer wavelengths according to a relationship known in electromagnetic theory in which the propagation time of the electric charge across a body determines its electrical length and its admittance or ability to preferentially absorb and/or radiate at a specific wavelength. For a ½ wavelength dipole arrangement each side of the substrate may have an approximately ¼ wavelength long conductor, and is most responsive to a wavefront that propagates in a direction that is perpendicular to the broad side of the conductors. Conductor lengths L that correspond to ¼ wavelength from ultraviolet, through the visible and to infrared light may have a range from about 60 nanometers to about 10000 nanometers may be accomplished using current techniques. The axial relationship of the two ¼ wavelength conductor set [0033] 25 and their more-or-less perpendicular disposition relative to the substrate make this array polarization sensitive to lightwave energy. In general, a higher current and lower voltage may be observed near the center of a resonant dipole arrangement in accordance with the conventional antenna art. It may be desirable to raise the voltage near the junction which may be accomplished either by adjusting the length of the antenna element or by placing the junction off center. It is known that ½ wavelength resonant antennas exhibit current minima and voltage maxim at the ends of the conductors, therefore, it may be desirable to approach lengths of ½ wavelength on each side of the substrate thereby producing a resonant structure about at about one full wavelength.
  • The thickness of the substrate and the thickness of the conductor may result in a longer charge transport pathway that tends to shorten the overall length of the dipole antenna somewhat. This shortening effect is well known in the radio art as it relates to thick antenna elements, but is less appreciated as it relates to the intersection of antenna elements since the delay times associated with radio frequency connections and intervening junctions are usually small with respect to the wavelength involved. In lightwave regimes these delays are more significant. To reduce internal charge transport or propagation of charge delay in the invention, a [0034] paited junction 23 may be constructed by growing two opposing nanotubes from one iron particle with the advantage of better electrical length control and less dependence upon substrate thickness to define the length of the structure.
  • It should be pointed out that the exact role and semiconductive properties of reduced metals within a substrate and their operation when connected to at least one end of a carbon nanotube has not been studied in sufficient detail, and it is possible that any discontinuity represented by any interruption of the nanotube itself, including termination, distortion etc., may be found to have inherent nonlinear properties which could additionally benefit the efficiency of the present invention. Due to the small size of these junctions and the high frequencies involved, tunneling effects, in addition to band gap effects, may be produced at or near the junctions or physical discontinuities of the structures as generally described. [0035]
  • Referring now to FIG. 4, an [0036] optical antenna array 26 has paired junctions 23 and conductor sets 25 of approximately equal lengths joined at substrate 11. Electrical terminal 27 is bonded to the substrate 11 by bond 29 which may be in electrical communication with either doped or undoped regions of the substrate. Application of a current to terminal 27 is effective to bias the electrical transport properties of the assembly. Application of an alternating waveform is effective to modulate the transport properties across the optical antenna array 26 in a periodic manner which causes it to act in a way that is similar to a diode switch or mixer arrangement as commonly encountered in the electrical and radio art. Since the inherent transport properties across the optical antenna array 26 are nonlinear, mixing and superimposition of the modulating electrical waveform with the light waveform is produced. Conversely, variations in the amplitude or phase of the light waveform are effective to influence the electrical port. These may produce sum and difference signals through the various processes known as heterodyning and modulating, and may result in an amplification or increase of the total power realized.
  • Referring to FIG. 4[0037] a, the optical antenna array 26 is supplied with staggered conductor sets 31 disposed upon substrate 11. As in the prior art radio frequency tag 5 shown in FIG 1 a, the lengths of the antenna or conductor elements are effective to enhance reradiation at certain wavelengths of-operation. Referring once again to the light modifying device assembly of FIG. 4a, two, three or more wavelengths may be selectively admitted and radiated depending upon the mix and distribution of element lengths. Best efficiency is obtained when the radiated energy is harmonically related to admitted energy. Practical devices with bandwidths broad enough to admit and radiate over a wide range of wavelengths are accommodated with this construction. To produce elements of varying lengths on the substrate, the process of particle deposition and nanotube growth may be repeated multiple times on a single substrate since the material C60 can withstand considerable thermal cycling without damage.
  • Referring to FIG. 4[0038] b, an optical antenna array 26 is patterned after a commonly known antenna type known as a log-periodic dipole array. Tapered length conductor sets 25 are effective to operate over a wide range of wavelengths, and coupling of the electromagnetic fields between adjacent elements is effective to selectively reinforce wave propagation so that a directional preference of the optical antenna array 26 is obtained. The log-periodic dipole array is merely exemplary; other antenna types include, but are not limited to, dipole, Yagi-Uda, collinear, phased array, rhombic or other structures that are known to radiate and admit electromagnetic energy in accordance with the antenna art, and conductors that are scaled and positioned with regard to the wavelengths of electromagnetic energy involved which may include transmission line structures comprised of more or less linear conductors.
  • Referring now to FIG. 5, an optical [0039] antenna array device 42 encloses the optical antenna array 26 which is mounted in a tubular holder 43 by means of a mounting plate 41. The holder may be made from machined aluminum which may have an outside diameter of about 1 mm and an inside diameter of about 0.25 mm or less. Larger or smaller structures may be constructed within the scope of the invention. A coating of aluminum 45 is deposited in center bore of holder 43 by a vacuum metalization process. The coating acts like a mirror which helps direct light from window 53 to and from the optical antenna array 26. Electrical wire 47 is brought out through insulator 49 to terminal 51 for the purpose of attaching and electronic device such as art oscillator, a receiver, a spectrum analyzer, a pulse generator, an amplifier, a power supply or the like to electrical terminal 27.
  • Referring to FIG. 5[0040] a, the operation of the optical antenna array device 42 is shown in block diagram form. Light source 61 (λ) shines light beam 63 into holder 43 and onto mounting plate 41 carrying the optical antenna array 26. The glancing angle of the light beam against the inside of the holder helps avoid a condition where all the light energy wave front is entirely perpendicular to the plane of the substrate. Mounting plate 41 may alternatively be positioned diagonally in holder 43 so that light energy propagates in a direction that is generally broadside to the long axes of the carbon nanotubes 21, as shown in FIG. 4, which are aligned with a generally perpendicular orientation with respect to the substrate material 11.
  • Returning once again to FIG. 5[0041] a, light beam 63 may interact with optical antenna array 26 which may produce reflected beam 65 (λ/2) at least a portion of which contains high levels of second, third or higher order harmonic energy. Simultaneously, transmitted beam 67 (λ/2) may interact with optical antenna array 26 which generates significant harmonic energy and propagates in a direction generally opposite light beam 63. Some isolation is afforded by the light loss that occurs at the optical antenna array 26 so that a plurality of light beams of different wavelengths may be introduced simultaneously, and their products may be detected at terminal 51. Polarization and isolation may be enhanced by the use of polarizing filters (not shown) and magnetic rings (also not shown) attached to one or more ends of holder 43.
  • What has been described is a practical harmonic generating device that can operate over a wide range of light wavelengths utilizing an optical antenna array system that is optimized for lightwave operation. The use of an array of elements that are produced at dimensions and oriented in a repeatable manner create optimal conditions for efficient collection, conversion and radiation of electromagnetic lightwave energy. This high efficiency is due to the ordered arrangement of conductive elements optimally dimensioned for electromagnetic radiation as previously practiced in the radio and antenna art which may now be practically applied to optical wavelengths. Further, attenuation effects are minimized through the use of optical elements which may operate in free space being attached at only one end, rather than in bulk, disordered form or in a solution. The invention allows the fabrication and practical use of linear conductors as antennas with lengths that correspond to light wavelengths and therefore allows the application of radiowave antenna, transmission and radiation practices, including harmonic generation and mixing, detection and frequency multiplication, to the lightivave regime. [0042]
  • Variations, modifications, and other implementations of what is described herein will occur to those of ordinary skill in the art without departing from the spirit and scope of the invention as claimed. Accordingly, the invention is to be defined not by the preceding illustrative description but instead by the spirit and scope of the following claims. [0043]

Claims (18)

I claim:
1. A lightwave electromagnetic antenna for the purpose of sending and receiving electromagnetic energy, said electromagnetic antenna having a linear conductor electrically connected to a substrate material, said linear conductor having an electrical length sized to respond to an electromagnetic light wavelength.
2. The lightwave electromagnetic antenna as recited in claim 1, wherein said linear conductor is oriented generally perpendicular to said substrate material.
3. The lightwave electromagnetic antenna as recited in claim 1, wherein said linear conductor is comprised of a carbon nanotube.
4. The lightwave electromagnetic antenna as recited in claim 1, wherein said electrical length of said linear conductor is sized to correspond to infrared, visible or ultraviolet light.
5. The lightwave electromagnetic antenna as recited in claim 1, wherein said linear conductor is attached to said substrate material at one end of said linear conductor.
6. A lightwave electromagnetic device having a linear conductor attached to a junction, said linear conductor having an electrical length sized to respond to light wavelength energy, said junction having a non-linear electrical charge transfer characteristic.
7. The lightwave electromagnetic device as recited in claim 6, wherein said junction is comprised of a nanoparticle.
8. The lightwave electromagnetic device as recited in claim 6, wherein said junction is comprised of a semiconducting substrate.
9. The lightwave electromagnetic device as recited in claim 6,
wherein said junction is electrically connected to a further electrical port.
10. A method of generating harmonic energy near light wavelengths comprising the steps of:
exposing a conductor to an infrared, visible or ultraviolet electromagnetic light energy having an alternating waveform,
inducing a current with said electromagnetic energy in said conductor to cause an electrical charge to cross a junction,
emitting at least a portion of said energy at a harmonic multiple of said light energy from said junction.
11. A device for rectifying an alternating waveform occurring around light wavelengths comprising;
a short conductor of less than 10,000 nanometers in length, and,
a nonlinear region with an electrical length less than a light wavelength attached to at least one end of said short conductor.
12. The device for rectifying an alternating waveform occurring around light wavelengths as recited in claim 11, wherein said short conductor is comprised of a carbon nanotube.
13. The device for rectifying an alternating waveform occurring around light wavelengths as recited in claim 11, wherein said nonlinear region is adjacent to one end of said short conductor.
14. A lightwave electromagnetic antenna having a linear conductor attached to a substrate material, said linear conductor having an electrical length sized to respond to an electromagnetic light wavelength.
15. The lightwave electromagnetic antenna as recited in claim 14, wherein said short linear conductor is in a range of 60 to 10,000 nanometers in length.
16. The lightwave electromagnetic antenna as recited in claim 14, wherein said linear conductor is elongated and has a high length-to-diameter ratio.
17. The lightwave electromagnetic antenna as recited in claim 14, wherein said substrate material is at least partly comprised of a solid semiconducting material.
18. The lightwave electromagnetic antenna of claim 17, wherein said semiconducting material is a foraminous semiconducting material.
US10/646,945 1997-01-16 2003-08-22 Optical antenna array for harmonic generation, mixing and signal amplification Expired - Fee Related US7205021B2 (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
US10/646,945 US7205021B2 (en) 1997-01-16 2003-08-22 Optical antenna array for harmonic generation, mixing and signal amplification
US10/789,390 US7099071B2 (en) 1997-01-16 2004-02-27 Method of moving a carbon nanotube
US10/791,668 US7132994B2 (en) 1997-01-16 2004-09-29 Optical antenna array for harmonic generation, mixing and signal amplification
US11/509,840 US7259903B2 (en) 1997-01-16 2006-08-24 Optical switching arrangement using carbon nanotubes
US11/509,833 US20070015350A1 (en) 1997-01-16 2006-08-24 Methods of manufacturing carbon nanotubes
US11/509,839 US7330299B2 (en) 1997-01-16 2006-08-24 Optical amplifying arrangement using carbon nanotubes
US11/648,025 US20070152832A1 (en) 1997-01-16 2006-12-30 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,179 US7535627B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,144 US20090052012A1 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,180 US7899301B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,242 US7486434B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US12/322,011 US20090168147A1 (en) 1997-01-16 2009-01-28 Optical antenna array for harmonic generation, mixing and signal amplification
US12/798,634 US8086079B2 (en) 1997-01-16 2010-04-08 Nanotube electronic device
US12/800,144 US20100220385A1 (en) 1997-01-16 2010-05-10 Nanotube electronic device
US13/200,554 US8922374B2 (en) 1997-01-16 2011-09-23 Dendritic electronic circuits for RFID

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US3608597P 1997-01-16 1997-01-16
US08/988,801 US6038060A (en) 1997-01-16 1997-12-11 Optical antenna array for harmonic generation, mixing and signal amplification
US09/523,626 US6258401B1 (en) 1997-01-16 2000-03-13 Optical antenna array for harmonic generation, mixing and signal amplification
US09/901,309 US6700550B2 (en) 1997-01-16 2001-07-09 Optical antenna array for harmonic generation, mixing and signal amplification
US10/646,945 US7205021B2 (en) 1997-01-16 2003-08-22 Optical antenna array for harmonic generation, mixing and signal amplification

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/901,309 Division US6700550B2 (en) 1997-01-16 2001-07-09 Optical antenna array for harmonic generation, mixing and signal amplification

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/789,390 Division US7099071B2 (en) 1997-01-16 2004-02-27 Method of moving a carbon nanotube
US10/791,668 Division US7132994B2 (en) 1997-01-16 2004-09-29 Optical antenna array for harmonic generation, mixing and signal amplification

Publications (2)

Publication Number Publication Date
US20040169615A1 true US20040169615A1 (en) 2004-09-02
US7205021B2 US7205021B2 (en) 2007-04-17

Family

ID=26712776

Family Applications (15)

Application Number Title Priority Date Filing Date
US09/901,309 Expired - Fee Related US6700550B2 (en) 1997-01-16 2001-07-09 Optical antenna array for harmonic generation, mixing and signal amplification
US10/646,945 Expired - Fee Related US7205021B2 (en) 1997-01-16 2003-08-22 Optical antenna array for harmonic generation, mixing and signal amplification
US10/789,390 Expired - Fee Related US7099071B2 (en) 1997-01-16 2004-02-27 Method of moving a carbon nanotube
US10/791,668 Expired - Fee Related US7132994B2 (en) 1997-01-16 2004-09-29 Optical antenna array for harmonic generation, mixing and signal amplification
US11/509,833 Abandoned US20070015350A1 (en) 1997-01-16 2006-08-24 Methods of manufacturing carbon nanotubes
US11/509,839 Expired - Fee Related US7330299B2 (en) 1997-01-16 2006-08-24 Optical amplifying arrangement using carbon nanotubes
US11/509,840 Expired - Fee Related US7259903B2 (en) 1997-01-16 2006-08-24 Optical switching arrangement using carbon nanotubes
US11/648,025 Abandoned US20070152832A1 (en) 1997-01-16 2006-12-30 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,242 Expired - Fee Related US7486434B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,144 Abandoned US20090052012A1 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,179 Expired - Fee Related US7535627B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,180 Expired - Fee Related US7899301B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US12/322,011 Abandoned US20090168147A1 (en) 1997-01-16 2009-01-28 Optical antenna array for harmonic generation, mixing and signal amplification
US12/798,634 Expired - Fee Related US8086079B2 (en) 1997-01-16 2010-04-08 Nanotube electronic device
US12/800,144 Abandoned US20100220385A1 (en) 1997-01-16 2010-05-10 Nanotube electronic device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/901,309 Expired - Fee Related US6700550B2 (en) 1997-01-16 2001-07-09 Optical antenna array for harmonic generation, mixing and signal amplification

Family Applications After (13)

Application Number Title Priority Date Filing Date
US10/789,390 Expired - Fee Related US7099071B2 (en) 1997-01-16 2004-02-27 Method of moving a carbon nanotube
US10/791,668 Expired - Fee Related US7132994B2 (en) 1997-01-16 2004-09-29 Optical antenna array for harmonic generation, mixing and signal amplification
US11/509,833 Abandoned US20070015350A1 (en) 1997-01-16 2006-08-24 Methods of manufacturing carbon nanotubes
US11/509,839 Expired - Fee Related US7330299B2 (en) 1997-01-16 2006-08-24 Optical amplifying arrangement using carbon nanotubes
US11/509,840 Expired - Fee Related US7259903B2 (en) 1997-01-16 2006-08-24 Optical switching arrangement using carbon nanotubes
US11/648,025 Abandoned US20070152832A1 (en) 1997-01-16 2006-12-30 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,242 Expired - Fee Related US7486434B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,144 Abandoned US20090052012A1 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,179 Expired - Fee Related US7535627B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US11/978,180 Expired - Fee Related US7899301B2 (en) 1997-01-16 2007-10-26 Optical antenna array for harmonic generation, mixing and signal amplification
US12/322,011 Abandoned US20090168147A1 (en) 1997-01-16 2009-01-28 Optical antenna array for harmonic generation, mixing and signal amplification
US12/798,634 Expired - Fee Related US8086079B2 (en) 1997-01-16 2010-04-08 Nanotube electronic device
US12/800,144 Abandoned US20100220385A1 (en) 1997-01-16 2010-05-10 Nanotube electronic device

Country Status (1)

Country Link
US (15) US6700550B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070176832A1 (en) * 2006-01-31 2007-08-02 Zhengfang Qian Nanostructured tunable antennas for communication devices
CN100395173C (en) * 2004-12-24 2008-06-18 清华大学 Light-positive controlling conductive device based on macro long multi-wall carbon nano tube bundle
CN100395172C (en) * 2004-12-24 2008-06-18 清华大学 Negative light control conductive device based on macroscopical long single-wall or double-wall nano tube bundle
US7649665B2 (en) 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7754964B2 (en) 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
US7943847B2 (en) 2005-08-24 2011-05-17 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
US20110163280A1 (en) * 2006-08-31 2011-07-07 Cambridge Enterprise Limited Optical Nanomaterial Compositions
US20110169704A1 (en) * 2002-12-09 2011-07-14 Rensselaer Polytechnic Institute Embedded nanotube array sensor and method of making a nanotube polymer composite
US8323789B2 (en) 2006-08-31 2012-12-04 Cambridge Enterprise Limited Nanomaterial polymer compositions and uses thereof

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6700550B2 (en) * 1997-01-16 2004-03-02 Ambit Corporation Optical antenna array for harmonic generation, mixing and signal amplification
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
US6534784B2 (en) 2001-05-21 2003-03-18 The Regents Of The University Of Colorado Metal-oxide electron tunneling device for solar energy conversion
US7126151B2 (en) * 2001-05-21 2006-10-24 The Regents Of The University Of Colorado, A Body Corporate Interconnected high speed electron tunneling devices
US7378075B2 (en) * 2002-03-25 2008-05-27 Mitsubishi Gas Chemical Company, Inc. Aligned carbon nanotube films and a process for producing them
JP4015582B2 (en) * 2003-05-09 2007-11-28 ニスカ株式会社 Image forming apparatus
AU2005230961B2 (en) * 2004-01-15 2010-11-11 Nanocomp Technologies, Inc. Systems and methods for synthesis of extended length nanostructures
US7129467B2 (en) * 2004-09-10 2006-10-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube based light sensor
US20070240757A1 (en) * 2004-10-15 2007-10-18 The Trustees Of Boston College Solar cells using arrays of optical rectennas
US8548415B2 (en) 2004-12-16 2013-10-01 Northrop Grumman Systems Corporation Carbon nanotube devices and method of fabricating the same
US7359694B2 (en) * 2004-12-16 2008-04-15 Northrop Grumman Corporation Carbon nanotube devices and method of fabricating the same
US20070210956A1 (en) * 2005-02-28 2007-09-13 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Optical antenna with phase control
US7489870B2 (en) * 2005-10-31 2009-02-10 Searete Llc Optical antenna with optical reference
US20060239686A1 (en) * 2005-02-28 2006-10-26 Hillis W D Electromagnetic device with frequency downconverter
US7555217B2 (en) * 2005-02-28 2009-06-30 Searete Llc Multi wavelength electromagnetic device
US20060210279A1 (en) * 2005-02-28 2006-09-21 Hillis W D Optical Antenna Assembly
EP2570385A3 (en) * 2005-05-03 2013-10-16 Nanocomp Technologies, Inc. Carbon composite materials and methods of manufacturing same
EP2112249A1 (en) * 2005-05-26 2009-10-28 Nanocomp Technologies, Inc. Systems and methods for thermal management of electronic components
US7993620B2 (en) 2005-07-28 2011-08-09 Nanocomp Technologies, Inc. Systems and methods for formation and harvesting of nanofibrous materials
US7292201B2 (en) * 2005-08-22 2007-11-06 Airgain, Inc. Directional antenna system with multi-use elements
US7623746B2 (en) * 2005-08-24 2009-11-24 The Trustees Of Boston College Nanoscale optical microscope
WO2007025066A2 (en) * 2005-08-24 2007-03-01 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
US7589880B2 (en) * 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
FR2891405B1 (en) * 2005-09-26 2011-11-25 Commissariat Energie Atomique CONDUCTIVE STRUCTURE FOR VARIABLE EXTENSION ACCORDING TO FREQUENCY
WO2007053477A2 (en) * 2005-10-31 2007-05-10 Searete Llc Electromagnetic device with frequency downconverter
WO2007053478A2 (en) * 2005-10-31 2007-05-10 Searete Llc Optical antenna assembly
EP1966851B1 (en) * 2005-11-04 2013-03-20 Nanocomp Technologies, Inc. Nanostructured antenna
JP2007268692A (en) * 2006-03-31 2007-10-18 Fujitsu Ltd Carbon nanotube connected body, its manufacturing method, and element and method for detecting target
US8084101B2 (en) * 2006-08-01 2011-12-27 The Board of Regents of the Nevada Systems of Higher Education on behalf of the University of Nevada, Las Vegas Fabrication of patterned and ordered nanoparticles
JP4825697B2 (en) * 2007-01-25 2011-11-30 株式会社ミツトヨ Digital displacement measuring instrument
WO2008094517A1 (en) * 2007-01-30 2008-08-07 Solasta, Inc. Photovoltaic cell and method of making thereof
EP2115784A2 (en) * 2007-02-12 2009-11-11 Solasta, Inc. Photovoltaic cell with reduced hot-carrier cooling
CA2679401A1 (en) * 2007-02-27 2008-09-04 Nanocomp Technologies, Inc. Materials for thermal protection and methods of manufacturing same
US20100144296A1 (en) * 2007-04-12 2010-06-10 Burke Peter J Carbon Nanotubes for Wireless Communication and Radio Transmission
US8347726B2 (en) * 2007-04-25 2013-01-08 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and methods for forming and using the same
US9061913B2 (en) * 2007-06-15 2015-06-23 Nanocomp Technologies, Inc. Injector apparatus and methods for production of nanostructures
US20090007956A1 (en) * 2007-07-03 2009-01-08 Solasta, Inc. Distributed coax photovoltaic device
ES2785044T3 (en) * 2007-07-09 2020-10-05 Nanocomp Technologies Inc Chemically assisted alignment of nanotubes within extensible structures
JP5496887B2 (en) 2007-07-25 2014-05-21 ナノコンプ テクノロジーズ インコーポレイテッド System and method for controlling nanotube chirality
CA2695853A1 (en) * 2007-08-07 2009-02-12 Nanocomp Technologies, Inc. Electrically and thermally non-metallic conductive nanostructure-based adapters
JP2010537410A (en) * 2007-08-14 2010-12-02 ナノコンプ テクノロジーズ インコーポレイテッド Nanostructured material-based thermoelectric generator
US8044866B2 (en) * 2007-11-06 2011-10-25 The Boeing Company Optically reconfigurable radio frequency antennas
US20090160728A1 (en) * 2007-12-21 2009-06-25 Motorola, Inc. Uncorrelated antennas formed of aligned carbon nanotubes
EP2279512B1 (en) 2008-05-07 2019-10-23 Nanocomp Technologies, Inc. Carbon nanotube-based coaxial electrical cables and wiring harness
CA2723619A1 (en) * 2008-05-07 2009-11-12 Nanocomp Technologies, Inc. Nanostructure-based heating devices and method of use
US9639797B2 (en) * 2008-07-03 2017-05-02 Mario W. Cardullo NANO RFID method and device
US8508422B2 (en) * 2009-06-09 2013-08-13 Broadcom Corporation Method and system for converting RF power to DC power utilizing a leaky wave antenna
US8354593B2 (en) * 2009-07-10 2013-01-15 Nanocomp Technologies, Inc. Hybrid conductors and method of making same
US10359151B2 (en) * 2010-03-03 2019-07-23 Ideal Industries Lighting Llc Solid state lamp with thermal spreading elements and light directing optics
US8797662B2 (en) 2010-12-14 2014-08-05 Micron Technology, Inc. Apparatuses and devices for absorbing electromagnetic radiation, and methods of forming the apparatuses and devices
US8314566B2 (en) * 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
US9570420B2 (en) 2011-09-29 2017-02-14 Broadcom Corporation Wireless communicating among vertically arranged integrated circuits (ICs) in a semiconductor package
EP2909865B1 (en) 2012-10-19 2020-08-19 Georgia Tech Research Corporation Multilayer coatings formed on aligned arrays of carbon nanotubes
ES2943257T3 (en) 2013-06-17 2023-06-12 Nanocomp Technologies Inc Exfoliating-dispersing agents for nanotubes, bundles and fibers
WO2015050602A1 (en) * 2013-06-25 2015-04-09 The Trustees Of Columbia University In The City Of New York Integrated photonic devices based on waveguides patterned with optical antenna arrays
WO2016126818A1 (en) 2015-02-03 2016-08-11 Nanocomp Technologies, Inc. Carbon nanotube structures and methods for production thereof
US10359630B2 (en) 2015-06-30 2019-07-23 Massachusetts Institute Of Technology Display apparatus comprising first and second optical phased arrays and method for augmented reality
WO2017139280A1 (en) * 2016-02-08 2017-08-17 University Of Iowa Research Foundation Frequency selective surface for high performance solar coatings for reduced energy consumption in buildings
US10581082B2 (en) 2016-11-15 2020-03-03 Nanocomp Technologies, Inc. Systems and methods for making structures defined by CNT pulp networks
WO2018098459A1 (en) * 2016-11-28 2018-05-31 Massachusetts Institute Of Technology Optical devices for efficient emission and/or absorption of electromagnetic radiation, and associated systems and methods
US11279836B2 (en) 2017-01-09 2022-03-22 Nanocomp Technologies, Inc. Intumescent nanostructured materials and methods of manufacturing same
RU180401U1 (en) * 2017-08-10 2018-06-13 Федеральное государственное автономное образовательное учреждение высшего образования "Крымский федеральный университет имени В.И. Вернадского" Nanoantenna
US11056797B2 (en) 2019-07-29 2021-07-06 Eagle Technology, Llc Articles comprising a mesh formed of a carbon nanotube yarn
US11322684B2 (en) 2019-08-15 2022-05-03 International Business Machines Corporation Electrically rotatable antennas formed from an optically tunable material
US11949161B2 (en) 2021-08-27 2024-04-02 Eagle Technology, Llc Systems and methods for making articles comprising a carbon nanotube material
US11901629B2 (en) 2021-09-30 2024-02-13 Eagle Technology, Llc Deployable antenna reflector

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227142A (en) * 1990-07-30 1993-07-13 Nikkiso Co., Ltd. Production apparatus for vapor-grown fine fibers
US5230925A (en) * 1990-06-25 1993-07-27 Kabushiki Kaisha Toshiba Gas-phase growing method and apparatus for the method
US5424054A (en) * 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US5565139A (en) * 1993-12-15 1996-10-15 Gel Sciences, Inc. Gel-based vapor extractor and methods
US5591312A (en) * 1992-10-09 1997-01-07 William Marsh Rice University Process for making fullerene fibers
US5780101A (en) * 1995-02-17 1998-07-14 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
US6183714B1 (en) * 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US6203814B1 (en) * 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409256A (en) * 1966-03-07 1968-11-05 Loren D. Burns Antenna roof mount support
US3711848A (en) 1971-02-10 1973-01-16 I D Eng Inc Method of and apparatus for the detection of stolen articles
US4105470A (en) 1977-06-01 1978-08-08 The United States Government As Represented By The United States Department Of Energy Dye-sensitized schottky barrier solar cells
US4445050A (en) * 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
US4197142A (en) 1979-03-07 1980-04-08 Canadian Patents & Development Ltd. Photochemical device for conversion of visible light to electricity
US4360703A (en) 1981-04-28 1982-11-23 National Research Council Of Canada Photovoltaic cell having P-N junction of organic materials
US4445080A (en) 1981-11-25 1984-04-24 The Charles Stark Draper Laboratory, Inc. System for indirectly sensing flux in an induction motor
JP2548703B2 (en) 1986-07-11 1996-10-30 三菱電機株式会社 Logic circuit
US6114696A (en) 1986-07-14 2000-09-05 Lockheed Martin Corporation Uncooled infrared detector
US4774554A (en) 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US5185208A (en) 1987-03-06 1993-02-09 Matsushita Electric Industrial Co., Ltd. Functional devices comprising a charge transfer complex layer
US5009958A (en) 1987-03-06 1991-04-23 Matsushita Electric Industrial Co., Ltd. Functional devices comprising a charge transfer complex layer
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
US4854876A (en) 1987-10-13 1989-08-08 Heath William W Aircraft carrier simulator and method
CH674596A5 (en) 1988-02-12 1990-06-15 Sulzer Ag
US4803688A (en) 1988-03-28 1989-02-07 Lawandy Nabil M Ordered colloidal suspension optical devices
JP2752687B2 (en) 1989-03-29 1998-05-18 三菱電機株式会社 Optical devices based on heteromolecular junctions
JPH03182725A (en) 1989-12-08 1991-08-08 Internatl Business Mach Corp <Ibm> Non-linear optical element and manufacture thereof
US5028109A (en) 1990-01-26 1991-07-02 Lawandy Nabil M Methods for fabricating frequency doubling polymeric waveguides having optimally efficient periodic modulation zone and polymeric waveguides fabricated thereby
JP2649856B2 (en) 1990-04-13 1997-09-03 松下電器産業株式会社 Nonlinear optical material
JPH06120536A (en) 1991-02-04 1994-04-28 Ricoh Co Ltd Photovoltaic element
US5332910A (en) 1991-03-22 1994-07-26 Hitachi, Ltd. Semiconductor optical device with nanowhiskers
US5233621A (en) 1991-06-27 1993-08-03 Intellectual Property Development Associates Of Connecticut, Inc. Second harmonic generation and self frequency doubling laser materials comprised of bulk germanosilicate and aluminosilicate glasses
US5157674A (en) 1991-06-27 1992-10-20 Intellectual Property Development Associates Of Connecticut, Incorporated Second harmonic generation and self frequency doubling laser materials comprised of bulk germanosilicate and aluminosilicate glasses
US5171373A (en) 1991-07-30 1992-12-15 At&T Bell Laboratories Devices involving the photo behavior of fullerenes
US5250378A (en) 1991-10-16 1993-10-05 E. I. Du Pont De Nemours And Company Charge transfer complexes and photoconductive compositions containing fullerenes
US5493628A (en) 1991-10-17 1996-02-20 Lawandy; Nabil M. High density optically encoded information storage using second harmonic generation in silicate glasses
US5253258A (en) 1991-10-17 1993-10-12 Intellectual Property Development Associates Of Connecticut, Inc. Optically encoded phase matched second harmonic generation device and self frequency doubling laser material using semiconductor microcrystallite doped glasses
US5933791A (en) * 1992-02-06 1999-08-03 Nec Corporation Cylindrical macromolecule and photometer and magnetometer using the same
US5267336A (en) 1992-05-04 1993-11-30 Srico, Inc. Electro-optical sensor for detecting electric fields
US5958358A (en) * 1992-07-08 1999-09-28 Yeda Research And Development Co., Ltd. Oriented polycrystalline thin films of transition metal chalcogenides
US5331183A (en) 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
US5689603A (en) 1993-07-07 1997-11-18 Huth; Gerald C. Optically interactive nanostructure
EP0723692A4 (en) * 1993-10-05 1997-05-28 Pac Scan Inc Retail theft prevention and information device
US5547748A (en) * 1994-01-14 1996-08-20 Sri International Carbon nanoencapsulates
US5448582A (en) 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
US5434878A (en) 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
JP2692591B2 (en) 1994-06-30 1997-12-17 株式会社日立製作所 Optical memory device and optical circuit using the same
US5604635A (en) 1995-03-08 1997-02-18 Brown University Research Foundation Microlenses and other optical elements fabricated by laser heating of semiconductor doped and other absorbing glasses
US5585962A (en) 1995-06-07 1996-12-17 Amoco Corporation External resonant frequency mixers based on degenerate and half-degenerate resonators
US5796506A (en) 1995-11-21 1998-08-18 Tsai; Charles Su-Chang Submillimeter indirect heterodyne receiver and mixer element
US6445006B1 (en) 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6251691B1 (en) 1996-04-25 2001-06-26 Bioarray Solutions, Llc Light-controlled electrokinetic assembly of particles near surfaces
EP0927331B1 (en) 1996-08-08 2004-03-31 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US5694498A (en) 1996-08-16 1997-12-02 Waveband Corporation Optically controlled phase shifter and phased array antenna for use therewith
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US5747861A (en) 1997-01-03 1998-05-05 Lucent Technologies Inc. Wavelength discriminating photodiode for 1.3/1.55 μm lightwave systems
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6700550B2 (en) * 1997-01-16 2004-03-02 Ambit Corporation Optical antenna array for harmonic generation, mixing and signal amplification
US6683783B1 (en) 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
US6096496A (en) 1997-06-19 2000-08-01 Frankel; Robert D. Supports incorporating vertical cavity emitting lasers and tracking apparatus for use in combinatorial synthesis
US6083843A (en) 1997-12-16 2000-07-04 Northern Telecom Limited Method of manufacturing planar lightwave circuits
US6233045B1 (en) 1998-05-18 2001-05-15 Light Works Llc Self-mixing sensor apparatus and method
US6203864B1 (en) 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
US6146227A (en) 1998-09-28 2000-11-14 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of MEMS devices
US6415082B1 (en) 1999-03-15 2002-07-02 Cirrex Corp. Optical networking assembly
KR100312694B1 (en) * 1999-07-16 2001-11-03 김순택 Fed having a carbon nanotube film as emitters
US6456423B1 (en) 1999-10-22 2002-09-24 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle microcrystal nonlinear optical devices
US6310583B1 (en) 2000-02-17 2001-10-30 Trw Inc. Steerable offset reflector antenna
KR20020006708A (en) * 2000-03-08 2002-01-24 요시카즈 나카야마 Nanotweezers and nanomanupulator
US6365466B1 (en) 2001-01-31 2002-04-02 Advanced Micro Devices, Inc. Dual gate process using self-assembled molecular layer
US6782154B2 (en) 2001-02-12 2004-08-24 Rensselaer Polytechnic Institute Ultrafast all-optical switch using carbon nanotube polymer composites
MXPA03008935A (en) 2001-03-30 2004-06-30 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom.
JP4306990B2 (en) * 2001-10-18 2009-08-05 独立行政法人産業技術総合研究所 Nonlinear optical element
AU2003281005A1 (en) * 2002-07-12 2004-02-02 Sharp Kabushiki Kaisha Wiring structure, display apparatus, and active device substrate
WO2005054934A1 (en) * 2003-12-03 2005-06-16 Asahi Glass Company, Limited Spatial light modulator and spatial light modulation method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230925A (en) * 1990-06-25 1993-07-27 Kabushiki Kaisha Toshiba Gas-phase growing method and apparatus for the method
US5227142A (en) * 1990-07-30 1993-07-13 Nikkiso Co., Ltd. Production apparatus for vapor-grown fine fibers
US5591312A (en) * 1992-10-09 1997-01-07 William Marsh Rice University Process for making fullerene fibers
US5424054A (en) * 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US5565139A (en) * 1993-12-15 1996-10-15 Gel Sciences, Inc. Gel-based vapor extractor and methods
US6203814B1 (en) * 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes
US5780101A (en) * 1995-02-17 1998-07-14 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide
US6183714B1 (en) * 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110169704A1 (en) * 2002-12-09 2011-07-14 Rensselaer Polytechnic Institute Embedded nanotube array sensor and method of making a nanotube polymer composite
CN100395172C (en) * 2004-12-24 2008-06-18 清华大学 Negative light control conductive device based on macroscopical long single-wall or double-wall nano tube bundle
CN100395173C (en) * 2004-12-24 2008-06-18 清华大学 Light-positive controlling conductive device based on macro long multi-wall carbon nano tube bundle
US7649665B2 (en) 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7754964B2 (en) 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
US7943847B2 (en) 2005-08-24 2011-05-17 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
US8431816B2 (en) 2005-08-24 2013-04-30 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
WO2007089992A3 (en) * 2006-01-31 2008-09-25 Motorola Inc Nanostructured tunable antennas for communication devices
US7501985B2 (en) 2006-01-31 2009-03-10 Motorola, Inc. Nanostructured tunable antennas for communication devices
US20070176832A1 (en) * 2006-01-31 2007-08-02 Zhengfang Qian Nanostructured tunable antennas for communication devices
WO2007089992A2 (en) * 2006-01-31 2007-08-09 Motorola, Inc. Nanostructured tunable antennas for communication devices
US20110163280A1 (en) * 2006-08-31 2011-07-07 Cambridge Enterprise Limited Optical Nanomaterial Compositions
US8323789B2 (en) 2006-08-31 2012-12-04 Cambridge Enterprise Limited Nanomaterial polymer compositions and uses thereof

Also Published As

Publication number Publication date
US20090052012A1 (en) 2009-02-26
US20100220385A1 (en) 2010-09-02
US7899301B2 (en) 2011-03-01
US20070015350A1 (en) 2007-01-18
US20070013993A1 (en) 2007-01-18
US8086079B2 (en) 2011-12-27
US20080131698A1 (en) 2008-06-05
US20050063658A1 (en) 2005-03-24
US20080130096A1 (en) 2008-06-05
US20070152832A1 (en) 2007-07-05
US7132994B2 (en) 2006-11-07
US7099071B2 (en) 2006-08-29
US7330299B2 (en) 2008-02-12
US6700550B2 (en) 2004-03-02
US20090168147A1 (en) 2009-07-02
US20100232012A1 (en) 2010-09-16
US20050062668A1 (en) 2005-03-24
US20020014999A1 (en) 2002-02-07
US7535627B2 (en) 2009-05-19
US7259903B2 (en) 2007-08-21
US7486434B2 (en) 2009-02-03
US20070013994A1 (en) 2007-01-18
US7205021B2 (en) 2007-04-17
US20080130095A1 (en) 2008-06-05

Similar Documents

Publication Publication Date Title
US6258401B1 (en) Optical antenna array for harmonic generation, mixing and signal amplification
US6700550B2 (en) Optical antenna array for harmonic generation, mixing and signal amplification
US8922374B2 (en) Dendritic electronic circuits for RFID
US6879289B2 (en) Apparatus for providing a controllable signal delay along a transmission line
Boutayeb et al. Directivity of an antenna embedded inside a Fabry–Perot cavity: analysis and design
Zhang et al. Design and analysis of optically controlled pattern reconfigurable planar Yagi–Uda antenna
Shi et al. Design of terahertz detection antenna with fractal butterfly structure
JP2012216714A (en) Terahertz detection device
Azam et al. Graphene based circular patch terahertz antenna using novel substrate materials
WO2010006440A1 (en) Terahertz photoconductive antennas having transparent conductor electrodes and methods of making same
Hwang et al. Planar sandwich antennas for submillimeter applications
CN107768841A (en) Terahertz antenna system
Kasagi et al. Proposal and fabrication of dipole array antenna structure in resonant-tunneling-diode terahertz oscillator array
Song et al. Research on high-performance antennas based on graphene materials
Mokhar et al. Simulation of Terahertz Broadband Antennas for Rectenna Applications
JPH07122927A (en) Array antenna and its manufacture
Ren et al. Broadband terahertz antenna for wide band gap semiconductor photoconductive switches
Alaeddine et al. New series‐fed traveling‐wave array
Das Dielectric-lens coupled printed dipole for millimeter wave applications: analysis using a hybrid spectral-domain method
Bansode et al. Effect of Insulator Layer on Optical Antenna in IR Energy Harvesting
Kislov et al. Uncooled nanoscale infrared high-speed sensors for missile seeker applications

Legal Events

Date Code Title Description
AS Assignment

Owner name: AMBIT CORPORATION, MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CROWLEY, ROBERT J.;REEL/FRAME:016570/0511

Effective date: 20041105

REMI Maintenance fee reminder mailed
FEPP Fee payment procedure

Free format text: PETITION RELATED TO MAINTENANCE FEES GRANTED (ORIGINAL EVENT CODE: PMFG); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

Free format text: PETITION RELATED TO MAINTENANCE FEES FILED (ORIGINAL EVENT CODE: PMFP); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

LAPS Lapse for failure to pay maintenance fees
REIN Reinstatement after maintenance fee payment confirmed
FP Lapsed due to failure to pay maintenance fee

Effective date: 20110417

FPAY Fee payment

Year of fee payment: 4

SULP Surcharge for late payment
AS Assignment

Owner name: SOUNDWAVE RESEARCH LABORATORIES, INC, MASSACHUSETT

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CROWLEY, ROBERT J. & HALGREN, DONALD N., DBA AMBIT CORP. OF MANCHESTER, MA;REEL/FRAME:026698/0183

Effective date: 20110728

AS Assignment

Owner name: SOUNDWAVE RESEARCH LABORATORIES, INC, MASSACHUSETT

Free format text: TO CORRECT WRONG APPL# 12/978,634 REEL/FRAME 026698/0183;ASSIGNOR:ROBERT J. CROWLEY & DONALD N. HALGREN, DBA AMBIT CORP. OF MANCHESTER, MA.;REEL/FRAME:026807/0614

Effective date: 20110812

PRDP Patent reinstated due to the acceptance of a late maintenance fee

Effective date: 20110829

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20150417