US20040144489A1 - Semiconductor processing device provided with a remote plasma source for self-cleaning - Google Patents
Semiconductor processing device provided with a remote plasma source for self-cleaning Download PDFInfo
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- US20040144489A1 US20040144489A1 US10/759,953 US75995304A US2004144489A1 US 20040144489 A1 US20040144489 A1 US 20040144489A1 US 75995304 A US75995304 A US 75995304A US 2004144489 A1 US2004144489 A1 US 2004144489A1
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- piping
- reaction chamber
- gas
- plasma discharge
- chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Definitions
- This invention relates to a CVD (chemical vapor deposition) device equipped with a self-cleaning device.
- the invention relates to a device that cleans the inside of a deposition chamber using remotely generated active species.
- CVD devices have been conventionally used to form insulation films such as silicon oxide, silicon nitride, amorphous carbon or polymer containing benzene ring, conductor films such as tungsten silicide, titanium nitrite or aluminum alloy and high-dielectric films containing PZT (PbZr 1-x Ti x O 3 ) or BST (Ba x Sr 1-x TiO 3 ) on silicon a substrate or glass substrate.
- insulation films such as silicon oxide, silicon nitride, amorphous carbon or polymer containing benzene ring
- conductor films such as tungsten silicide, titanium nitrite or aluminum alloy
- reaction gas with various compositions or a second reaction gas is supplied within a deposition chamber. These gases cause a chemical reaction by receiving plasma energy and a desired thin film is formed on a semiconductor substrate.
- films that are generated similarly by chemical reaction adhere to its inner wall and the surface of a wafer support. These adhesive substances are accumulated gradually as film formation is repeated. Then, disengaging from the inner wall and the surface of the support, these adhesive substances sometimes float within the reaction chamber. This causes impurity contamination that leads to defects in manufactured semiconductor circuits.
- in situ cleaning that cleans the inside while the reaction chamber is in operation is effective.
- This method is to remove adhesive substances by bringing cleaning gas, which is selected according to the type of adhesive substances, into the reaction chamber to decompose the adhesive substances into gaseous materials. For example, if silicon oxide or silicon nitride, tungsten or its nitride or silicide adheres, CF 4 , C 2 F 6 , C 3 F 8 or NF 3 is used as cleaning gas.
- active species (fluorine radical) of fluorine atoms or fluorine-containing active species decomposes the substances adhering to the inner wall of the reaction chamber and impurities can be removed in the gas phase.
- a valve is provided between the second plasma reaction chamber and the reaction chamber to regulate pressure and the second plasma reaction chamber is maintained at a designated pressure.
- Generated fluorine active species are brought into the deposition chamber through a conduit, and it decomposes and removes adhesive substances on the inner wall of the reaction chamber.
- an embodiment is to provide a remote plasma discharge chamber comprising materials that are resistant to damage, and at the same time, to provide reaction chamber cleaning without ion bombardment.
- Another embodiment of this invention is to provide a CVD device in which plasma ignition at the remote plasma discharge chamber is easy and reliable.
- Yet another embodiment of this invention is to provide a CVD device that quickly exhausts residual gas within piping after supply of activation cleaning gas is stopped.
- another embodiment of this invention is to provide a plasma CVD device that supplies cleaning gas to the reaction chamber by maintaining the amount of fluorine species that is activated in the remote plasma discharge chamber.
- a plasma CVD device includes the following embodiments:
- the CVD device of the preferred embodiments comprises a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber with the remote plasma discharge chamber.
- the remote plasma discharge chamber activates cleaning gas by plasma discharge. energy.
- the activated cleaning gas is brought into the inside of the reaction chamber through the piping and changes solid substances, which adhere to the inside of the reaction chamber as a consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber.
- the device is characterized by at least one of the following:
- the remote plasma discharge chamber generates active species using radio-frequency oscillating output energy of a preselected frequency
- the piping is made of materials that are not corroded by the active species.
- the device further comprises a support provided within the reaction chamber, which supports an object to be or being processed, and a gas-emitting plate provided at a position facing the support within the reaction chamber.
- the plate uniformly supplies reaction gas to the object being processed to form a film onto the object being processed, wherein the activated cleaning gas is supplied through piping into the reaction chamber from holes provided through the gas-emitting plate.
- the preselected frequency is 300 kHz-500 kHz and the active species is a fluorine activated species.
- the inside surface of the piping is made of fluorine-passivated stainless steel, aluminum or aluminum alloy.
- the size of the opening of the valve, when fully opened is substantially equal to the inner diameter of the piping, and the valve does not have projections, when fully opened, with respect to the inner surface of the piping.
- the valve has an opening, when fully opened, such that the pressure drop across the valve is preferably less than about 0.25 Torr (or less than about 5% of the inlet pressure), more preferably less than about 0.1 Torr (or less than about 1% of the inlet pressure, and most preferably substantially no pressure loss is caused.
- the piping is preferably straight in the vicinity of the valve. Most preferably, all three of these features are combined to produce an efficient, self-cleaning CVD reactor.
- radio-frequency (e.g., 400 kHz) oscillating output allows manufacturing the remote plasma discharge chamber from anodized aluminum alloy, for example.
- it is unnecessary to use sapphire or quartz, which are required when conventional microwave output is used. Risk of damage during processing and problems of fluorine active species consumption are thereby reduced.
- damage to electrodes by ion bombardment at the time of cleaning and deterioration of electrode surfaces can successfully be prevented.
- complex tuning circuits are unnecessary and miniaturization of the remote plasma discharge chamber and lower cost can be realized.
- a phenomenon wherein powdered aluminum fluoride adsorbs onto the electrode surface is reduced or eliminated and device downtime due to device maintenance can be considerably shortened. As a result, productivity is improved.
- FIG. 1 is a schematic diagram showing a cross-sectional view of a substrate-processing device, constructed in accordance with a first embodiment of the present invention.
- FIG. 2 is a schematic diagram showing a cross-sectional view of a substrate-processing device, constructed in accordance with a second embodiment of the invention.
- FIG. 3 is a schematic diagram showing a cross-sectional view of a substrate-processing device, constructed in accordance with a third embodiment of the invention.
- FIGS. 4 ( a ) and 4 ( b ) are schematic diagrams, each showing a cross-sectional view of a valve employed by the preferred embodiments; FIG. 4( a ) shows a closed state of the valve, and FIG. 4( b ) shows an open state of the valve.
- FIG. 5 is a schematic diagram showing a cross-sectional view of a substrate-processing device according to a fourth embodiment of the present invention.
- microwave-transparent materials such as sapphire and quartz.
- Such materials tend to break easily, particularly under thermal stresses of plasma generation, and it is difficult to connect them with metal conduits or piping.
- quartz it is necessary to replace quartz regularly because it is easily etched by fluorine active species.
- sapphire is resistant to etching by fluorine active species, sapphire is expensive, and hence it increases the cost of a device.
- the internal surface of the piping that brings fluorine species into the reaction chamber is typically made of TeflonTM or similar materials. TeflonTM, however easily adsorbs or absorbs the products of dissociating fluoride and NF 3 gases. Dissociated or recombined plasma products from NF 3 gas, which is absorbed on the internal surface of the piping, is released from the internal surface of the piping after supply of cleaning gas is stopped. It remains within the piping and its residual gas diffuses to reaction chamber. When the reaction chamber comprises a second plasma discharge chamber, the released gases can cause ignition failure of plasma discharge. Moreover, chemical reaction can occur if reaction gas for film formation flows into an area where residual gas remains, and undesired films, particles or powder are generated within the piping.
- a pressure of about 4-20 Torr pressure is required within the remote plasma discharge chamber.
- a valve to regulate pressure is provided between the remote plasma chamber and the downstream reaction chamber. Pressure within the remote plasma chamber can be increased by keeping the valve only partially open, leaving some obstruction within the flow path.
- restricting the flow using a valve to raise pressure creates different inconveniences, such as deactivation of fluorine active species and plasma burning. Fluorine active species generated within the remote plasma discharge chamber is deactivated by contact with the metal surface.
- Fluorine active species generated in the remote plasma discharge chamber radiates a great volume of heat energy when losing activation by contact with the metal surface. Because of this heat energy, the temperature of the contact surface rises.
- O-rings made of fluorine-containing rubber and other materials are typically used to seal the inside from the external environment. The above-mentioned overheating caused by contact with fluorine active species destroys O-rings. Particularly, within the above-mentioned valve for pressure regulation, there is a risk that O-rings are broken off. If the O-rings are damaged, piping airtightness cannot be maintained.
- reaction gas used when forming a film onto substrate within the reaction chamber can flow backward or diffuse from the deposition chamber to the remote plasma discharge chamber.
- the reaction gas can form solid substances on the remote plasma discharge chamber surfaces in a powdered state due to imperfect reaction. If these solid substances then in a powder state flow into the reaction chamber when forming a film, particles can contaminate the substrate.
- reaction gas adsorbed on the internal surface of the remote plasma discharge chamber raises the ignition electric potential required for plasma discharge in the remote plasma discharge chamber. If the ignition electric potential value becomes higher than the design value for the remote plasma discharge chamber, it is possible that plasma discharge cannot be executed.
- the remote plasma discharge chamber is desirably sealable from the reaction chamber. However, this would obviously cause reduction of fluorine active species that can reach the reaction chamber and a satisfactory cleaning rate and performance can not be achieved.
- a CVD device includes the following embodiments and can resolve the above problems:
- the CVD device comprises a reaction chamber, a plasma discharge chamber that is provided remotely from the reaction chamber (i.e., a remote plasma source), and piping that links the reaction chamber and the remote plasma discharge chamber.
- the remote plasma discharge chamber activates cleaning gas by plasma discharge energy.
- the activated cleaning gas is brought into the inside of the reaction chamber through the piping and etches solid substances that adhere to the inside of the reaction chamber as a consequence of film formation, thereby cleaning the inside of the reaction chamber.
- the device is characterized by at least one of the following:
- the remote plasma discharge chamber generates active species using radio-frequency oscillating output energy of a preselected frequency
- the piping is made of materials that are not corroded by the active species.
- the device further comprises a support provided within the reaction chamber, which supports an object to be or being processed, and a gas-emitting plate provided at a position facing the support within the reaction chamber in order to uniformly supply reaction gas to the object being processed to form a film onto the object being processed, wherein the activated cleaning gas is supplied through piping into the reaction chamber from holes provided on the gas-emitting plate.
- the device is configured for single-pass, horizontal, laminar gas flow through a cold-wall reactor.
- the device further comprises a susceptor provided within the reaction chamber, which supports an object to be processed and which adsorbs radiant heat provided through transparent chamber walls.
- the activated cleaning gas is supplied through an inlet in the chamber walls upstream of the susceptor.
- the preselected frequency is about 300 kHz-500 kHz.
- the active species is fluorine activated species.
- the inside surface of the piping is made of fluorine-passivated stainless steel, aluminum, or aluminum alloy.
- the CVD device includes a gas conduit to bring reaction gas into the reaction chamber separately from the cleaning gas.
- the CVD device is configured for plasma CVD with structures for in situ plasma generation.
- One end of the gas conduit is linked with the reaction chamber.
- One end of the gas conduit is linked with the piping.
- the CVD device includes a valve at a predetermined position of the piping between the remote plasma discharge chamber and the reaction chamber.
- the inside of the valve is made of fluorine-passivated aluminum.
- One end of the gas conduit is linked to the piping at a predetermined position between the valve and the reaction chamber.
- a combination of (a) and (c) can include any of the following features:
- the preselected frequency is 300 kHz-500 kHz.
- the active species is fluorine activated species.
- the piping and valve are heated at a predetermined temperature.
- a gas conduit to bring reaction gas into said reaction chamber is included.
- One end of the gas conduit is linked to the reaction chamber.
- One of the gas conduit is linked to the piping.
- a combination of (a), (b), and (c) can be used to enhance the advantageous effects.
- the advantages of such features are described above.
- FIG. 1 is a schematic cross section of an exemplary a plasma CVD device according to this embodiment.
- a plasma CVD device 1 which is used to form a thin film on a semiconductor wafer 9 or other substrate, comprises a reaction chamber 2 , a support 3 provided within the reaction chamber to support the semiconductor wafer 9 , a showerhead 4 that is positioned to face the support 3 and is used to jet out reaction gas uniformly onto the semiconductor wafer 9 , an outlet 20 to exhaust reaction gases and byproducts from the reaction chamber 2 , and a remote plasma discharge chamber 13 .
- the remote plasma discharge chamber 13 is positioned remotely from reaction chamber 2 and is linked to the showerhead 4 via piping 14 and valve 15 .
- the remote plasma discharge chamber 13 has characteristics wherein it generates active species using radio-frequency oscillating output energy of the designated frequency and the piping 14 is made of materials that are not corroded by the active species.
- reaction chamber 2 On one side of the reaction chamber 2 , an opening 19 is formed and the reaction chamber is connected to a transfer chamber (not shown) to bring a semiconductor wafer or other substrate in and carry it out via a gate valve 18 .
- the support 3 that is provided within the reaction chamber 2 and is used to place the semiconductor wafer 9 is made of anodized aluminum or aluminum alloy and is grounded 27 to constitute one side of an electrode of plasma discharge.
- the reaction chamber 2 of the illustrated embodiment is thus a plasma CVD chamber configured for in situ (in chamber) plasma generation.
- a ring-shape heating element 26 is embedded and the semiconductor wafer's temperature is controlled at a predetermined temperature using a temperature controller (not shown).
- the support 3 is connected to a driving mechanism 25 that moves the support 3 up and down through a support piston 29 .
- the showerhead 4 is provided at a position facing the support 3 .
- thousands of fine holes are provided to inject reaction gas onto the semiconductor wafer 9 .
- the showerhead 4 is electrically connected to a radio-frequency oscillator 8 via matching circuit 10 and constitutes another electrode of plasma discharge.
- a reaction gas conduit 11 is connected to the piping 14 .
- the number of the gas conduit 11 is not limited to one. According to the type of reaction gas, the necessary number of gas conduits can be installed.
- One end of the gas conduit 11 constitutes a gas inlet port 5 to cause reaction gas to flow in and the other end constitutes a reaction gas exit port 7 to cause gas to flow out to the showerhead 4 .
- a mass flow controller (not shown) and valve 6 are positioned in the middle of the reaction gas conduit 11 .
- an outlet 20 is provided on the side wall of the reaction chamber 2 .
- the outlet 20 is connected to a vacuum exhaust pump (not shown) through piping 17 .
- a conductance-controlling valve 21 is provided between the outlet 20 and the vacuum pump to regulate pressure within the reaction chamber 2 .
- the conductance-controlling valve 21 is electrically connected to an external regulator 28 .
- a pressure gauge 28 a is preferably provided to measure pressure within the reaction chamber 2 .
- This pressure gauge 28 a is electrically connected to the regulator 28 .
- the remote plasma discharge chamber 13 is remotely provided from the reaction chamber 2 .
- the remote plasma discharge chamber 13 is made of anodized aluminum alloy.
- the remote plasma discharge chamber 13 is linked to the showerhead 4 within the reaction chamber through piping 14 .
- a valve 15 is provided in the middle of the piping 14 .
- the internal surface of this piping 14 is preferably made of fluorine-passivated stainless steel, but aluminum or fluorine-passivated aluminum alloy can be also used.
- the internal surface of the valve 15 is made of fluorine-passivated aluminum alloy.
- One end of the piping 14 constitutes a cleaning gas inlet port 12 to cause cleaning gas to flow in and the other end constitutes a cleaning gas exit port 16 to bring cleaning gas into the showerhead 4 .
- fluorine-containing gases such as nitrogen fluoride, carbon fluoride and chlorine fluoride
- mixed gas of nitrogen or carbon fluoride or mixed gases of the foregoing gases with oxygen, nitrogen or inert gas can be used.
- mixed gases of NF 3 , CIF 3 , CF 4 , C 2 F 6 , C 3 F 8 with oxygen, mixed gas of NF 3 with nitrogen, mixed gas of NF 3 with dilute gas can be used.
- dilute gas helium, argon, neon, xenon, or krypton can be used.
- An observation window 23 is preferably also provided on the side wall of the reaction chamber 2 and a charged coupled device (CCD) detector 22 is mounted on the observation window. Furthermore, a monitor 24 is installed on the CCD detector 22 .
- the observation window 23 is preferably made of sapphire, but aluminum oxide can also be used. Also, in addition to the CCD detector, a photomultiplier tube or a photoelectric converter can also be used.
- Operation of the plasma CVD device according to this embodiment is explained. Operation is roughly divided into two sequences: (1) a thin film formation sequence, forming a film on the semiconductor wafer 9 , and (2) a cleaning sequence, cleaning surfaces on the inside of the reaction chamber.
- the thin film formation sequence is illustrated as forming silicon oxide on the semiconductor wafer 9 as an example.
- the inside of the reaction chamber 2 is evacuated and exhausted by an external vacuum pump (not shown) through the outlet 20 .
- Pressure within the reaction chamber can be regulated in a range from 1 Torr to 8 Torr by the degree of opening of the conductance-controlling valve 21 .
- the support 3 heated by the heating element 26 controls the semiconductor wafer 9 at a designated temperature, preferably 300° C.-420° C. (572° F.-788° F.), using the temperature controller (not shown).
- reaction gases SiH 4 , NH 3 and N 2 , the flow of which is controlled by the mass flow controller (not shown), flow in from a reaction gas inlet port 5 and are brought into the showerhead 4 through the gas exit ports 7 after passing the valve 6 .
- reaction gases SiH 4 and NH 3 flow in from the reaction gas inlet port 5 and only N 2 flows in from a cleaning gas inlet port 12 .
- N 2 gas that flows in from the inlet port 12 , even though the valve 15 is not provided.
- Mixed reaction gases are injected uniformly from the fine holes formed at the lower side of the showerhead 4 onto the semiconductor wafer 9 .
- Radio-frequency power of 13.56 MHz or mixed power of 13.56 MHz and 430 kHz is applied to the showerhead 4 by the radio-frequency oscillator 8 .
- a plasma reaction domain is formed in the space between the showerhead 4 , which is serves as one electrode for in situ plasma generation within the reaction chamber 2 , and the support 3 , which serves as the other electrode.
- Molecules of the reaction gas within that domain are activated and ionized by plasma energy. Ionized molecules cause chemical reaction on semiconductor substrate 9 and silicon nitride is formed.
- the valve 6 Upon termination of thin film formation processing, the valve 6 is closed and at the same time the gate valve 18 is opened.
- the processed semiconductor wafer 9 is carried out to an adjoining transfer chamber (not shown) by an automatic transfer robot (not shown) through the opening 19 .
- an unprocessed semiconductor wafer is carried in from the transfer chamber, the gate valve 18 is closed, and the above sequence is repeated.
- Mixed gas of NF 3 and argon which is used as cleaning gas, is provided at a designated flow rate into the cleaning gas inlet port 12 and is brought into the remote plasma discharge chamber 13 .
- Preferred flow rates for the fluorine-containing gas are between about 0.5 slm and 1.5 slm; preferred flow rates for the carrier gas are about 0.5 slm and 4 slm.
- the inert carrier gas is about 2 to 3 times the flow of the fluorine-containing gas.
- radio-frequency output from 300 kHz to 500 kHz is applied to the flowing cleaning gas with power from 1,000 W to 5,000 W. With this energy, cleaning gas is dissociated and activated at a given efficiency and fluorine active species is generated.
- Fluorine active species that is injected into the reaction chamber 2 from the showerhead 4 causes chemical reaction with solid silicon nitride adhering to the inner wall and other surfaces of the reaction chamber 2 and changes the solid adhesive substance to a gaseous substance.
- a controller 28 that controls the opening size or angle of the conductance-controlling valve 21 in real-time in response to pressure within the reaction chamber measured by the pressure gauge 28 a.
- FIG. 2 shows another example according to this embodiment.
- a plasma CVD device 30 of FIG. 2 includes a link between one end of the reaction conduit 11 and piping 14 at a junction 31 positioned between the remote plasma discharge chamber 13 and a gas exit port 32 . Reaction gas and cleaning gas are mixed at the junction 31 and are brought into a showerhead 4 from one gas inlet port 32 .
- the device 30 can be otherwise similar to the device 1 of FIG. 1.
- the valve 15 is set up at the plasma discharge chamber side before the junction 31 .
- the valve 15 preferably fluorine-passivated aluminum, aluminum alloy, stainless steel or nickel material is used, but aluminum or aluminum alloy can also be used.
- fluorocarbon polymers such as PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene•perfluoroalkylvinyl ether copolymer) or PCTFE (polychlorotrifluoroethylene) or perfluoroelastomer is used, but resin or fluorine-containing rubber (e.g., VITON® or Kalrez®) that has heat-resistance and corrosion resistance can also be used.
- PTFE polytetrafluoroethylene
- PFA tetrafluoroethylene•perfluoroalkylvinyl ether copolymer
- PCTFE polychlorotrifluoroethylene
- resin or fluorine-containing rubber e.g., VITON® or Kalrez®
- valve 15 can be removed.
- one end of the reaction gas conduit 11 is connected to the piping 14 at a designated position between the remote plasma discharge chamber 13 and the gas exit port 32 and constitutes a junction.
- Plasma CVD operation and cleaning operation can be conducted as described for Embodiment 1.
- FIG. 3 is a schematic diagram showing a cross sectional view of a preferable implementation example of a plasma CVD device according to this embodiment.
- a plasma CVD device 1 which is used to form a thin film on a semiconductor wafer 9 or other substrate, comprises a reaction chamber 2 , a support 3 provided within the reaction chamber 2 to place the semiconductor wafer 9 , a showerhead 4 that positioned facing the support 3 and is used to inject reaction gas uniformly onto the semiconductor wafer 9 , an outlet 20 to exhaust the inside of reaction chamber 2 .
- the remote plasma discharge chamber 13 is positioned remotely from reaction chamber 2 and is linked to the showerhead 4 via piping 14 and valve 15 .
- the remote plasma discharge chamber 13 has characteristics wherein it generates active species using radio-frequency oscillating output energy of the designated frequency.
- reaction chamber 2 On one side of the reaction chamber 2 , an opening 19 is formed and the reaction chamber 2 is connected to a transfer chamber (not shown) to bring a semiconductor wafer or other substrate in and carry it out via a gate valve 18 .
- the support 3 that is provided within the reaction chamber 2 and is used to place the semiconductor wafer 9 is made of anodized aluminum or aluminum alloy and is grounded 27 to constitute one electrode for in situ plasma discharge.
- the reaction chamber 2 of the illustrated embodiment is thus a plasma CVD chamber configured for in situ (in chamber) plasma generation.
- a ring-shape heating element 26 is embedded and the semiconductor wafer's temperature is controlled at a designated temperature using a temperature controller (not shown).
- the support 3 is connected to a driving mechanism 25 that moves the support 3 up and down through a support piston 29 .
- the support 3 that supports the semiconductor wafer 9 is not necessarily limited to being made of anodized aluminum or aluminum alloy; instead a ceramic heater can be used.
- the ceramic heater has a ceramic plate, and a resistance heating element embedded and a metal element forms one electrode for in situ plasma discharge.
- the metal element is grounded to the electrode of plasma discharge if possible.
- a ceramic plate has excellent corrosion resistance to aluminum nitride, magnesium oxide, aluminum oxide, etc. and is made of material that has sufficient thermal conductivity to serve as a heater.
- tungsten is used for the resistance-heating element.
- tungsten or molybdenum can be used.
- the showerhead 4 is provided at the position facing the support 3 .
- the showerhead 4 is electrically connected to a radio-frequency oscillator 8 via matching circuit 10 and makes up another electrode for the in situ plasma discharge.
- a reaction gas conduit 11 is connected to piping 14 .
- the number of the gas conduit 11 is not limited to one. According to the type of reaction gas, the necessary number of gas conduits can be installed.
- One end of the gas conduit 11 constitutes a gas inlet port 5 to cause reaction gas to flow in and other end is connected to the piping 14 at the junction 31 .
- Reaction gas is brought in from gas exit port 7 to the inside of the showerhead 4 via the piping 14 .
- a mass flow controller (not shown) and the valve 6 are set up in the middle of the reaction gas conduit 11 .
- an outlet 20 is provided on the side wall of the reaction chamber 2 .
- the outlet 20 is connected to a vacuum exhaust pump (not shown) through piping 17 .
- a conductance-controlling valve 21 is provided between the outlet 20 and the vacuum pump to regulate pressure within the reaction chamber 2 .
- the conductance-controlling valve 21 is electrically connected to an external regulator 28 .
- a pressure gauge 28 a is preferably provided to measure pressure within the reaction chamber.
- the pressure gauge is electrically connected to the regulator 28 .
- the remote plasma discharge chamber 13 of this embodiment is positioned remotely from the reaction chamber 2 .
- the remote plasma discharge chamber 13 is a radio-frequency electric discharge device that uses frequency in a radio frequency range from 300 kHz to 500 kHz. It is not desirable to use microwaves of around 2.45 GHz for the frequency of the remote plasma discharge chamber as mentioned earlier, because it requires an electric discharge chamber that deteriorates easily.
- an automatic matching transformer must be installed between the radio-frequency oscillator and the remote plasma discharge chamber to realize stable plasma discharge. Adding this automatic matching transformer increases cost.
- a frequency range of 300 kHz to 500 kHz efficiently enables activation of the cleaning gas, allows a plasma discharge chamber made of materials that do not easily deteriorate and realizes a more compact device itself.
- the range is from 350 kHz to 450 kHz and more preferably it is 400 kHz to 430 kHz.
- the remote plasma discharge chamber 13 is preferably made of anodized aluminum alloy.
- the remote plasma discharge chamber 13 is linked to the showerhead 4 within the reaction chamber 2 through the piping 14 .
- a valve 15 is provided in the middle of the piping 14 .
- the piping 14 is a straight-line structure. Its internal diameter is at least 1 ⁇ 2 inch, but preferably more than one inch.
- the valve 15 is characterized in that no structure to restrict the flow exists within the passage when it is open.
- the internal diameter of the open passage is not much extremely smaller than the piping 14 and preferably is the same. Consequently, when cleaning gas flows from the remote plasma discharge chamber to the reaction chamber, no appreciable pressure loss arises in the piping 14 and at the valve 15 .
- the pressure drop is less than about 0.25 Torr (or less than about 5% of the inlet pressure) across the valve 15 , more preferably less than about 0.1 Torr (or less than about 1% of the inlet pressure).
- the piping 14 is made of aluminum or aluminum alloy, but corrosion-resistant stainless steel can also be used.
- One end of the piping 14 is connected to the remote plasma discharge chamber 13 and other end constitutes a gas exit port 7 used to bring cleaning gas into the showerhead 4 .
- a cleaning gas inlet port 12 is provided to bring cleaning gas into the remote plasma discharge chamber 13 . After being controlled at the designated flow by the mass flow controller (not shown), cleaning gas is brought into the cleaning gas inlet port 12 .
- the piping 14 and the valve 15 are preferably heated by a heater (not shown) to a temperature that prevents reaction gas and cleaning gas from adsorbing of the surfaces thereof.
- the temperature of the piping 14 and valve 15 can be selected according to the types of reaction gas and cleaning gas. Further, if needed, portions of the conduit 11 , the valve 6 and the gas inlet port 5 can also be heated by heaters (not shown) at a designated temperature.
- FIG. 4 the cross-section of the valve 15 used in the present embodiments is shown.
- FIG. 4( a ) shows a closed state of the valve 15 while FIG. 4( b ) shows an open state of the valve 15 .
- the valve 15 comprises a body 24 made of aluminum or aluminum alloy.
- a valve body 30 is fixed to a shaft 32 by a bolt 32 .
- an O-ring 34 which attains airtightness by sealing the inside 35 of the body 24 , is mounted.
- portions of the piping 14 (FIG. 3) to be connected to the remote plasma discharge chamber can be mounted.
- portions the piping 14 to be connected to the gas exit port 7 can be mounted.
- the mounting direction at the openings 23 and 22 is not limited and can be changed according to circumstances.
- Material used for the body 24 of the valve 15 is not limited to aluminum or aluminum alloy. Other materials that have excellent resistance to corrosion, such as stainless steel, can also be used.
- the valve body 30 is made of aluminum or aluminum alloy, but metals excellent in corrosion resistance such as nickel, titanium, stainless steel or resins excellent in corrosion resistance such as polyimide resin can be used.
- the bolt 33 and the shaft 32 are made of metals that have excellent resistance to corrosion, such as aluminum, aluminum alloy, nickel and stainless steel.
- the O-ring 34 comprises an elastic material that is resistant to deterioration by the flowing gas to be used.
- the O-ring 34 preferably comprises fluorine-containing rubber, and more preferably a perfluoroelastomer.
- valve body 30 in its closed state, the valve body 30 is at the position shown in FIG. 4( a ).
- the O-ring 34 mounted on the valve body 30 seals the inside 35 of the body 24 .
- FIG. 4( b ) when the valve 15 is open, the valve body 30 is pulled up into the space 36 within the body 24 of the valve 15 and is stored. The vertical motion of the valve body 30 is performed by moving the shaft 32 by a driving mechanism (not shown) of the valve 15 .
- FIG. 4( b ) when the valve 15 is open, the valve body 30 and the shaft 32 are stored entirely within the space 36 and are completely removed from the passage defined between the opening 23 and the opening 22 .
- there is no structure hindering cleaning gas flowing through the valve 15 when the valve body 30 is in the position of FIG. 4( a ), there is no structure hindering cleaning gas flowing through the valve 15 .
- fluorine-containing gases such as nitrogen fluoride, carbon fluoride and chlorine fluoride
- mixed gas of nitrogen or carbon fluoride or mixed gases of those gases with oxygen or inactive gas can be used.
- mixed gases of NF 3 , CIF 3 , CF 4 , C 2 F 6 , C 3 F 8 with oxygen, mixed gas of NF 3 with nitrogen, mixed gas of NF 3 with dilute gas can be used.
- dilute gas helium, argon, neon, xenon, or krypton can be used.
- operation of the plasma CVD device according to this embodiment is explained. As described above, operation is roughly divided into two sequences: (1) thin film formation on the semiconductor wafer 9 , and (2) cleaning the inside of the reaction chamber.
- the thin film formation sequence is explained by reference to forming silicon oxide onto the semiconductor wafer 9 as an example.
- the inside of the reaction chamber 2 is evacuated and exhausted by an external vacuum pump (not shown) through the outlet 20 .
- Pressure within the reaction chamber can be regulated in a range from 1 Torr to 8 Torr by the angle of opening of the conductance-controlling valve 21 .
- the support 3 heated by the heating element 26 controls the semiconductor wafer 9 at a designated temperature, preferably 300° C.-420° C. (572° F.-788° F.) using the temperature controller (not shown).
- reaction gases SiH 4 , NH 3 and N 2 , the flow of which is controlled by the mass flow controller (not shown), flow in from the reaction gas inlet port 5 and are brought into the showerhead 4 through the gas exit port 7 after passing through the valve 6 .
- an influx of SiH 4 , NH 3 and N 2 gases into the remote plasma discharge chamber 13 is prevented by closing the valve 15 .
- the reaction gases are injected uniformly from the fine holes formed at the lower side of the showerhead 4 onto the semiconductor wafer 9 .
- Radio-frequency power of 13.56 MHz or mixed power of 13.56 MHz and 430 kHz is applied to the showerhead 4 by the radio-frequency oscillator 8 .
- a plasma reaction domain is formed in the space between the showerhead 4 , which constitutes one electrode, and the support 3 , which constitutes another electrode. Molecules of the reaction gas within that domain are activated by plasma energy and silicon nitride is formed on the semiconductor substrate 9 .
- valve 6 Upon termination of thin film formation processing, the valve 6 is closed and at the same time the valve 18 is opened.
- the processed semiconductor wafer 9 is carried out to an adjoining transfer chamber (not shown) by an automatic transfer robot (not shown) through the opening 19 .
- an unprocessed semiconductor wafer is carried in from the transfer chamber, the gate valve 18 is closed, and the above sequence is repeated.
- radio frequency output is set so that unnecessary products adhering to the inside of the reaction chamber 2 are removed at an acceptable rate.
- a preferable range for radio frequency output range is from 1,500 W to 3,000 W and a more preferred range is from 2,000 W to 3 , 000 W. With this energy, cleaning gas is dissociated and activated at a certain efficiency to generate fluorine active species.
- the piping 14 and the valve 15 are preferably heated at a temperature from 100° C. to 200° C. (from 212° F. to 392° F.), facilitating rapid purging of the gas flowing inside.
- a temperature from 100° C. to 200° C. (from 212° F. to 392° F.)
- cleaning gas containing fluorine active species is used to clean the reaction chamber 2
- solid ammonium fluoride is generated if NH 3 and fluorine active species are mixed, and the inside of the piping 14 is contaminated.
- the piping 14 and the valve 15 are more preferably heated at least at 120° C. (248° F.).
- TEOS [Si(OC2H5)4]
- heating the piping 14 and the valve 15 to at least 120° C. (248° F.) also prevents liquifying TEOS as it flows.
- the temperature of the valve 15 and the piping 14 is determined according to the type of reaction gas to flow into the reaction chamber 2 , but restricted by the heat-resistance temperature of the valve 15 . In the illustrated embodiment, the upper limit of the temperature is about 200° C. (392° F.).
- a chemical vapor deposition (CVD) device 110 is illustrated in accordance with a fourth embodiment of the invention.
- the illustrated CVD reactor 110 includes a cold-wall reaction chamber 112 .
- the deposition or reaction chamber 112 comprises quartz, which is transparent to certain wavelengths of radiant energy, which will be understood in view of the description of the heating system described below.
- a plurality of radiant heat sources is supported outside the chamber 112 to provide heat energy in the chamber 112 without appreciable absorption by the quartz chamber 112 walls. While the preferred embodiments are described in the context of a “cold wall” CVD reactor for processing semiconductor wafers, it will be understood that the processing methods described herein will have utility in conjunction with other heating/cooling systems, such as those employing inductive or resistive heating.
- the illustrated radiant heat sources comprise an upper heating assembly of elongated tube-type radiant heating elements 113 .
- the upper heating elements 113 are preferably disposed in spaced-apart parallel relationship and also substantially parallel with the reactant gas flow path through the underlying reaction chamber 112 .
- a lower heating assembly comprises similar elongated tube-type radiant heating elements 114 below the reaction chamber 112 , preferably oriented transverse to the upper heating elements 113 .
- a portion of the radiant heat is diffusely reflected into the chamber 112 by rough specular reflector plates (not shown) above and below the upper and lower lamps 113 , 114 , respectively.
- a plurality of spot lamps 115 supply concentrated heat to the underside of the substrate support structure (described below), to counteract a heat sink effect created by cold support structures extending through the bottom of the reaction chamber 112 .
- Each of the elongated tube type heating elements 113 , 114 is preferably a high intensity tungsten filament lamp having a transparent quartz envelope containing a halogen gas, such as iodine. Such lamps produce full-spectrum radiant heat energy transmitted through the walls of the reaction chamber 112 without appreciable absorption. As is known in the art of semiconductor processing equipment, the power of the various lamps 113 , 114 , 115 can be controlled independently or in grouped zones in response to temperature sensors.
- a substrate preferably comprising a silicon wafer 116 , is shown supported within the reaction chamber 112 upon a substrate support structure 118 .
- the substrate of the illustrated embodiment is a single-crystal silicon wafer, it will be understood that the term “substrate” broadly refers to any workpiece on which a layer is to be deposited. Moreover, cleaning and prevention of contamination is often required in depositing layers on other substrates, including, without limitation, the deposition of optical thin films on glass or other substrates.
- the illustrated support structure 118 includes a substrate holder 20 , upon which the wafer 116 rests, and a support spider 122 .
- the spider 122 is mounted to a shaft 124 , which extends downwardly through a tube 126 depending from the chamber lower wall.
- the tube 126 communicates with a source of purge or sweep gas which can flow during processing, inhibiting process gases from escaping to the lower section of the chamber 112 .
- a plurality of temperature sensors are positioned in proximity to the wafer 116 .
- the temperature sensors may take any of a variety of forms, such as optical pyrometers or thermocouples.
- the number and positions of the temperature sensors are selected to promote temperature uniformity, as will be understood in light of the description below of the preferred temperature controller.
- the temperature sensors directly or indirectly sense the temperature of positions in proximity to the wafer.
- the temperature sensors comprise thermocouples, including a first or central thermocouple 128 , suspended below the wafer holder 120 in any suitable fashion.
- the illustrated central thermocouple 128 passes through the spider 122 in proximity to the wafer holder 120 .
- the device 110 further includes a plurality of secondary or peripheral thermocouples, also in proximity to the wafer 116 , including a leading edge or front thermocouple 129 , a trailing edge or rear thermocouple 130 , and a side thermocouple (not shown).
- Each of the peripheral thermocouples is housed within a slip ring 132 , which surrounds the substrate holder 120 and the wafer 116 .
- Each of the central and peripheral thermocouples are connected to a temperature controller, which sets the power of the various heating elements 113 , 114 , 115 in response to the readings of the thermocouples.
- the slip ring 132 absorbs and emits radiant heat during high temperature processing, such that it compensates for a tendency toward greater heat loss or absorption at wafer edges, a phenomenon which is known to occur due to a greater ratio of surface area to volume in regions near such edges. By minimizing edge losses, the slip ring 132 can reduce the risk of radial temperature non-uniformities across the wafer 116 .
- the slip ring 132 can be suspended by any suitable means.
- the illustrated slip ring 132 rests upon elbows 134 , which depend from a front chamber divider 36 , and a rear chamber divider 38 .
- the dividers 36 , 38 desirably are formed of quartz. In some arrangements, the rear divider 138 can be omitted.
- the illustrated reaction chamber 112 includes an inlet port 140 for the injection of reactant and carrier gases for deposition by CVD, and the wafer 116 can also be received therethrough.
- An outlet port 142 is on the opposite side of the chamber 112 , with the wafer support structure 118 positioned between the inlet 140 and outlet 142 .
- An inlet component 150 is fitted to the reaction chamber 112 , adapted to surround the inlet port 140 , and includes a horizontally elongated slot 152 through which the wafer 116 can be inserted.
- a generally vertical inlet 154 receives gases from remote sources and communicates such gases with the slot 152 and the inlet port 140 .
- the inlet 154 can include gas injectors as described in U.S. Pat. No. 5,221,556, issued Hawkins et al., or as described with respect to FIGS. 21 - 26 in U.S. pat. application Ser. No. 08/637,616, filed Apr. 25, 1996, the disclosures of which are hereby incorporated by reference. Such injectors are designed to maximize uniformity of gas flow for the single-wafer reactor.
- An outlet component 156 similarly mounts to the process chamber 112 such that an exhaust opening 158 aligns with the outlet port 142 and leads to exhaust conduits 159 .
- the conduits 159 can communicate with suitable vacuum means (not shown) for drawing process gases through the chamber 112 .
- process gases are drawn through the reaction chamber 112 and a downstream scrubber (not shown).
- a pump or fan is preferably included to aid in drawing process gases through the chamber 112 , and to evacuate the chamber for low pressure processing.
- Wafers are preferably passed from a handling chamber (not shown), which is isolated from the surrounding environment, through the slot 152 by a pick-up device.
- the handling chamber and the processing chamber 112 are preferably separated by a gate valve (not shown) of the type disclosed in U.S. Pat. No. 4,828,224, the disclosure of which is hereby incorporated herein by reference.
- the preferred device 110 also includes a source of excited species positioned upstream from the chamber 112 .
- the excited species source of the illustrated embodiment comprises a power generator connected to a remote plasma discharge chamber 13 .
- the remote plasma discharge chamber 13 is connected to the deposition chamber 112 by way of piping 14 having a valve 15 thereon.
- One end of the piping 14 constitutes a cleaning gas inlet port 12 to cause cleaning gas to flow into the remote plasma discharge chamber 13 .
- the other end of the piping 14 constitutes a cleaning gas exit port 16 to bring cleaning gas into the horizontal flow path defined between the inlet 140 and outlet 142 of the reaction chamber 112 .
- the inlet end 12 of the piping 14 is shown connected to multiple gas sources.
- a source of cleaning gas 163 is coupled to the inlet end 12 of the piping for introduction of cleaning gas into the remote plasma discharge chamber 13 .
- a source of carrier gas 164 is also preferably coupled to the gas line 12 .
- the gas sources 163 , 164 can comprise gas tanks, bubblers, etc., depending upon the form and volatility of the reactant species.
- Each gas line can be provided with a separate mass flow controller (MFC) and valves, as shown, to allow selection of relative amounts of carrier and reactant species introduced to the remote plasma discharge chamber and thence into the reaction chamber 112 .
- MFC mass flow controller
- One or more further branch lines 165 can also be provided for additional reactants.
- source gases connected to the branch line(s) can be connected to sources useful for plasma assisting deposition within the chamber.
- the remote plasma discharge chamber 13 can be used not only for cleaning, but also for providing activated reactants for plasma CVD.
- a separate remote plasma source can be provided for deposition reactants.
- the chamber 13 , piping 14 and valve 15 can be as described above with respect to any of the embodiments of FIGS. 1 - 4 .
- the valve 15 can be optionally omitted, and replaced with a flow of carrier or inert gas through the remote plasma discharge chamber 13 (without applying dissociating energy) during the deposition phase of the process.
- the device 110 of FIG. 5 can be used for depositing films of various compositions by CVD, including epitaxial silicon, polysilicon, silicon oxide and silicon nitride.
- the remote plasma discharge chamber 13 can provide activated reactants for assisting reactions in CVD, thus lowering thermal needs for this deposition.
- NH 3 ammonia
- SiH 4 sccm silane
- Nitrogen continues to flow at the same flow rate, and temperature and pressure are maintained at about 780?C and 50 Torr.
- Ammonia and silane flow are continued for about 90 seconds, reacting at the substrate surface to deposit 430 a layer of silicon nitride with a thickness of about 3 nm.
- one or more of the reactants can be activated through the remote plasma discharge chamber 13 , thus lowering the temperature for the same deposition rate.
- the reaction chamber pressure is preferably reduced to facilitate plasma ignition within the remote plasma discharge chamber.
- a carrier flow of N 2 gas is maintained at about 15 slm while about 350 sccm silane is introduced.
- Employing disilane can advantageously improve deposition rates.
- Pressure continues to be maintained at about 50 Torr, and the temperature held steady at about 680?C.
- a polysilicon electrode layer of about 150 nm is deposited 637 . It will be understood that the polysilicon formed by this method would be doped for appropriate conductivity after deposition 637 , though in situ doping (during deposition) is also contemplated.
- in situ doping common doping sources such as phosphine, arsine or diborane can be added to the silane flow.
- the chamber can be backfilled to about atmospheric pressure for an H 2 /SiH 4 polysilicon process.
- one or more of the reactants can be activated through the remote plasma discharge chamber 13 , thus lowering the temperature for the same deposition rate.
- the reaction chamber pressure is preferably reduced to facilitate plasma ignition within the remote plasma discharge chamber.
- the polysilicon layer is in situ doped with germanium in order to lower the electrical workfunction at the gate/dielectric interface.
- germanium for example, a germane (1.5% in H 2 ) flow of about 100 sccm to 1,000 sccm can be added to the silane flow.
- the temperature of the deposition is preferably maintained between about 550° C. and 650° C., more preferably at about 600° C. ⁇ 15° C.
- a germanium content in the resulting poly-SiGe layer is about 10% to 60%.
- one or more of the reactants can be activated through the remote plasma discharge chamber 13 , thus lowering the temperature for the same deposition rate.
- the reaction chamber pressure is preferably reduced to facilitate plasma ignition within the remote plasma discharge chamber.
- fluorine active species can be provided through the remote plasma discharge chamber 13 , as described with respect to the previous embodiments.
- Suitable cleaning gases following silicon deposition include HCl or NF 3 /Cl 2 provided through the remote plasma discharge chamber 13 .
- Cleaning gases following silicon oxide or silicon nitride deposition can be as described with respect to the previous embodiments, and preferably include fluorine containing gases.
- a process using both of the species NF 3 and Cl 2 at a temperature in the range of 20° C. to 800° C., and preferably 500° C. to 800° C., and at a pressure compatible with the remote plasma generator working range (typically 0.5 to 5 Torr for this process) can be performed in order to remove deposited layers formed of silicon, silicon nitride, silicon oxynitride and/or silicon dioxide.
- NF 3 and Cl 2 are dissociated when flowing through the remote plasma discharge chamber 13 by applying between about 1,000 W and 5,000 W of radio frequency energy, preferably between about 2,000 W and 3,000 W of 300 kHz to 500 kHz energy.
- NF 3 , Cl 2 and N 2 flow through the remote plasma discharge chamber 13 .
- the N 2 flow helps increasing the etch rate and increase the overall gas velocity.
- the NF 3 :Cl 2 flow ratio and the temperature can be adjusted in order to increase the selectivity of the silicon nitride etch versus silicon dioxide, eventually to infinite, such that the silicon dioxide is untouched by the etch. Further details are provided in Suto et al, “Highly selective etching of Si 3 N 4 to SiO 2 employing fluorine and chlorine atoms generated by microwave discharge”, J. ELECTROCHEMICAL SOCIETY, Vol. 136, No 7, Jul. 1989, p.
Abstract
A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.
Description
- The present application is a divisional of U.S. Ser. No. 09/764,523, filed Jan. 18, 2001 and claims the priority benefit of provisional application No. 60/176,592, filed Jan. 18, 2000.
- 1. Field of the Invention
- This invention relates to a CVD (chemical vapor deposition) device equipped with a self-cleaning device. In particular, the invention relates to a device that cleans the inside of a deposition chamber using remotely generated active species.
- 2. Description of the Related Art
- CVD devices have been conventionally used to form insulation films such as silicon oxide, silicon nitride, amorphous carbon or polymer containing benzene ring, conductor films such as tungsten silicide, titanium nitrite or aluminum alloy and high-dielectric films containing PZT (PbZr1-xTixO3) or BST (BaxSr1-xTiO3) on silicon a substrate or glass substrate.
- To form these films, reaction gas with various compositions or a second reaction gas is supplied within a deposition chamber. These gases cause a chemical reaction by receiving plasma energy and a desired thin film is formed on a semiconductor substrate. Within a reaction chamber, films that are generated similarly by chemical reaction adhere to its inner wall and the surface of a wafer support. These adhesive substances are accumulated gradually as film formation is repeated. Then, disengaging from the inner wall and the surface of the support, these adhesive substances sometimes float within the reaction chamber. This causes impurity contamination that leads to defects in manufactured semiconductor circuits.
- To remove contaminants adhering to the inner wall of the reaction chamber, in situ cleaning that cleans the inside while the reaction chamber is in operation is effective. This method is to remove adhesive substances by bringing cleaning gas, which is selected according to the type of adhesive substances, into the reaction chamber to decompose the adhesive substances into gaseous materials. For example, if silicon oxide or silicon nitride, tungsten or its nitride or silicide adheres, CF4, C2F6, C3F8 or NF3 is used as cleaning gas. In this case, active species (fluorine radical) of fluorine atoms or fluorine-containing active species decomposes the substances adhering to the inner wall of the reaction chamber and impurities can be removed in the gas phase.
- In the case of a plasma CVD device, because a plasma excitation device used for film formation is also used for activation of cleaning gas, large ion bombardment is caused between electrodes by high radio frequency (RF) power applied to the cleaning gas. As a result, the surface of electrodes is damaged; a surface layer comes off to cause impurity contamination. It becomes necessary to replace damaged parts frequently, which increases operation cost.
- To solve these shortcomings caused by ion bombardment, remote plasma cleaning was developed. In U.S. Pat. No. 5,788,778, issued Aug. 4, 1998, and U.S. Pat. No. 5,844,195, issued Dec. 1, 1998, which are herein incorporated by reference, a method is disclosed in which NF3 is used as a cleaning gas and plasma excitation that activates NF3 is performed using microwaves in the second plasma discharge chamber, which is different and is separated from the reaction chamber. According to this method, flow-controlled NF3 is brought into the second plasma discharge chamber, it is dissociated and activated by 2.45 GHz microwaves supplied to the plasma discharge chamber from a microwave oscillator through a waveguide, and fluorine active species are generated. At this time, to achieve microwave plasma discharge efficiently, a valve is provided between the second plasma reaction chamber and the reaction chamber to regulate pressure and the second plasma reaction chamber is maintained at a designated pressure. Generated fluorine active species are brought into the deposition chamber through a conduit, and it decomposes and removes adhesive substances on the inner wall of the reaction chamber.
- In U.S. Pat. No. 5,788,799, issued Aug. 4, 1998, which is herein incorporated by reference, it is disclosed that for the conduit that brings fluorine active species into the reaction chamber, aluminum is preferable to stainless steel and that Teflon materials such as polytetrafluoroethylene (PTFE) are the most preferable.
- In U.S. Pat. No. 5,844,195, issued Dec. 1, 1998, which is herein incorporated by reference, along with activation of cleaning gas in the second plasma discharge chamber, it is disclosed that cleaning gas is supplementarily activated further using radio-frequency plus true electric discharge in the reaction chamber and that a filter is provided between the second plasma discharge chamber and the reaction chamber to remove undesirable particles. This technology is also reflected in the teachings of U.S. Pat. No. 5,788,778.
- While the above-mentioned remote plasma cleaning methods alleviated the problems caused by ion bombardment, there remains a need for improvement in these methods.
- Among various embodiments of the present invention, an embodiment is to provide a remote plasma discharge chamber comprising materials that are resistant to damage, and at the same time, to provide reaction chamber cleaning without ion bombardment.
- Another embodiment of this invention is to provide a CVD device in which plasma ignition at the remote plasma discharge chamber is easy and reliable.
- Yet another embodiment of this invention is to provide a CVD device that quickly exhausts residual gas within piping after supply of activation cleaning gas is stopped.
- Further, another embodiment of this invention is to provide a plasma CVD device that supplies cleaning gas to the reaction chamber by maintaining the amount of fluorine species that is activated in the remote plasma discharge chamber.
- That is, a plasma CVD device according to this invention includes the following embodiments:
- The CVD device of the preferred embodiments comprises a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber with the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge. energy. The activated cleaning gas is brought into the inside of the reaction chamber through the piping and changes solid substances, which adhere to the inside of the reaction chamber as a consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following:
- (a) the remote plasma discharge chamber generates active species using radio-frequency oscillating output energy of a preselected frequency;
- (b) the piping is made of materials that are not corroded by the active species; or
- (c) the piping is provided with a through-flow type valve.
- According to one embodiment, the device further comprises a support provided within the reaction chamber, which supports an object to be or being processed, and a gas-emitting plate provided at a position facing the support within the reaction chamber. The plate uniformly supplies reaction gas to the object being processed to form a film onto the object being processed, wherein the activated cleaning gas is supplied through piping into the reaction chamber from holes provided through the gas-emitting plate.
- With regard to (a) above, in an embodiment, the preselected frequency is 300 kHz-500 kHz and the active species is a fluorine activated species. With regard to (b) above, in an embodiment, the inside surface of the piping is made of fluorine-passivated stainless steel, aluminum or aluminum alloy. With regard to (c) above, in an embodiment, the size of the opening of the valve, when fully opened, is substantially equal to the inner diameter of the piping, and the valve does not have projections, when fully opened, with respect to the inner surface of the piping. Namely, the valve has an opening, when fully opened, such that the pressure drop across the valve is preferably less than about 0.25 Torr (or less than about 5% of the inlet pressure), more preferably less than about 0.1 Torr (or less than about 1% of the inlet pressure, and most preferably substantially no pressure loss is caused. In the above, the piping is preferably straight in the vicinity of the valve. Most preferably, all three of these features are combined to produce an efficient, self-cleaning CVD reactor.
- As a result of (a), the following advantages can be realized: use of radio-frequency (e.g., 400 kHz) oscillating output allows manufacturing the remote plasma discharge chamber from anodized aluminum alloy, for example. Thus, it is unnecessary to use sapphire or quartz, which are required when conventional microwave output is used. Risk of damage during processing and problems of fluorine active species consumption are thereby reduced. In addition, damage to electrodes by ion bombardment at the time of cleaning and deterioration of electrode surfaces can successfully be prevented. Moreover, complex tuning circuits are unnecessary and miniaturization of the remote plasma discharge chamber and lower cost can be realized. Furthermore, a phenomenon wherein powdered aluminum fluoride adsorbs onto the electrode surface is reduced or eliminated and device downtime due to device maintenance can be considerably shortened. As a result, productivity is improved.
- As a result of (b), the following advantages can be realized: use of materials inert to fluorine active species for internal surfaces of the piping and the valve, instead of resin materials such as PFA, adsorption of fluorine active species or fluoride gas onto the internal surface of the piping or the valve can be eliminated. Thus, the occurrence of fluorine active species or fluoride gas being released from the internal surface of the piping and the valve after cleaning is completed and remaining within the remote plasma discharge chamber is reduced or eliminated. Accordingly, the occurrence of plasma ignition failure can be controlled. Moreover, when supply of fluorine-containing gas is stopped, fluorine active species is promptly discharged from the piping and the remote plasma discharge chamber. Reduction of fluorine adsorption also increases the amount of fluorine active species brought into the reaction chamber, thereby maintaining the activity of active species and improving cleaning efficiency.
- As a result of (c), the following advantages can be realized: use of rectilinear piping with a large internal diameter and a valve that does not restrict flow between the remote plasma discharge chamber and the reaction chamber, deactivation (recombination) of fluorine active species is reduced, due to reduced collisions with the piping surface and structure within the valve. Accordingly, applying radio frequency power of less than 3,000 W to the remote plasma discharge chamber, high-speed cleaning at over 2 micron/min becomes possible. Furthermore, reduced collisions also minimizes thermal energy generated when fluorine active species is deactivated, thus reducing overheating of the piping and the valve. Heat damage to O-rings and other components, and consequent generation of particles is also reduced or eliminated. The frequency with which damaged parts are replaced thus decreases, and operating costs of the device can be decreased while at the same time increasing productivity of the device.
- The skilled artisan will readily appreciate in view of the present disclosure that, while each of features (a), (b), and (c) are advantageous in and of themselves, combining two or all of (a), (b) and (c) will synergistically enhance the advantageous effects.
- These and other aspects of the invention will be readily apparent from the detailed description below and the appended drawings, which are meant to illustrate and not to limit the invention, in which like reference numerals are used to indicated like parts, and in which:
- FIG. 1 is a schematic diagram showing a cross-sectional view of a substrate-processing device, constructed in accordance with a first embodiment of the present invention.
- FIG. 2 is a schematic diagram showing a cross-sectional view of a substrate-processing device, constructed in accordance with a second embodiment of the invention.
- FIG. 3 is a schematic diagram showing a cross-sectional view of a substrate-processing device, constructed in accordance with a third embodiment of the invention.
- FIGS.4(a) and 4(b) are schematic diagrams, each showing a cross-sectional view of a valve employed by the preferred embodiments; FIG. 4(a) shows a closed state of the valve, and FIG. 4(b) shows an open state of the valve.
- FIG. 5 is a schematic diagram showing a cross-sectional view of a substrate-processing device according to a fourth embodiment of the present invention.
- Problems of Conventional Remote Plasma Source Technology
- The conventional remote plasma source technology discussed earlier entails the following problems:
- First, to use microwave plasma, it is necessary to manufacture the second plasma discharge chamber using microwave-transparent materials, such as sapphire and quartz. Such materials tend to break easily, particularly under thermal stresses of plasma generation, and it is difficult to connect them with metal conduits or piping. Also, it is necessary to replace quartz regularly because it is easily etched by fluorine active species. Although sapphire is resistant to etching by fluorine active species, sapphire is expensive, and hence it increases the cost of a device.
- Further, in connection with the material used for the piping connecting the reaction chamber and the remote plasma discharge chamber, the following problems are caused:
- The internal surface of the piping that brings fluorine species into the reaction chamber is typically made of Teflon™ or similar materials. Teflon™, however easily adsorbs or absorbs the products of dissociating fluoride and NF3 gases. Dissociated or recombined plasma products from NF3 gas, which is absorbed on the internal surface of the piping, is released from the internal surface of the piping after supply of cleaning gas is stopped. It remains within the piping and its residual gas diffuses to reaction chamber. When the reaction chamber comprises a second plasma discharge chamber, the released gases can cause ignition failure of plasma discharge. Moreover, chemical reaction can occur if reaction gas for film formation flows into an area where residual gas remains, and undesired films, particles or powder are generated within the piping. These products accumulate within the piping, later flow into the reaction chamber, and cause impurity contamination on the semiconductor substrate surface. To prevent this from happening, it is possible to remove residual gas by purging the inside of the piping using helium or argon gas for many hours. However, this process remarkably lowers the productivity of the semiconductor-processing device.
- Furthermore, if the internal surface of the piping that brings fluorine active species into the reaction chamber is made of stainless steel, aluminum, or aluminum alloy, fluoride is formed due to reaction between the surface within the piping and fluorine active species, and the amount of fluorine active species brought into the reaction chamber is decreased. As a result, the cleaning time of the reaction chamber increases and the productivity of the device drops.
- In connection with the structure or function of the piping connecting the reaction chamber and the remote plasma discharge chamber, the following problems are caused:
- To realize a faster cleaning rate, high power microwave energy can be used to generate the plasma. However, such energetic plasma causes the remote plasma chamber to deteriorate, and particles which pollute the downstream reaction chamber are generated. Providing a filter between the deposition chamber and the reaction chamber to prevent these undesirable particles from flowing into the reaction chamber lowers the cleaning rate due to deactivation or recombination of fluorine active species, which is mentioned later. Thus the primary object of hastening the cleaning rate is negated.
- Further, within the remote plasma discharge chamber, to dissociate NF3 with high efficiency to generate fluorine active species, a pressure of about 4-20 Torr pressure is required within the remote plasma discharge chamber. To achieve this pressure, a valve to regulate pressure is provided between the remote plasma chamber and the downstream reaction chamber. Pressure within the remote plasma chamber can be increased by keeping the valve only partially open, leaving some obstruction within the flow path. However, restricting the flow using a valve to raise pressure creates different inconveniences, such as deactivation of fluorine active species and plasma burning. Fluorine active species generated within the remote plasma discharge chamber is deactivated by contact with the metal surface. While being brought into the reaction chamber where film formation is performed through a conduit, generated fluorine active species returns to molecules by colliding with the valve that restricts the flow by narrowing a passage, or it is deactivated by reacting with the valve surface. As a result, the amount of fluorine active species declines. Similarly, if piping from the second plasma discharge chamber to the reaction chamber is too long or bends at an acute angle, due to higher contact probability with the piping surface en route or by colliding with the comer portion of the bent piping, the amount of fluorine active species decreases. Decreased fluorine active species lowers the cleaning rate within the downstream deposition chamber and results in insufficient cleaning.
- Fluorine active species generated in the remote plasma discharge chamber radiates a great volume of heat energy when losing activation by contact with the metal surface. Because of this heat energy, the temperature of the contact surface rises. For piping connecting the second plasma discharge chamber to the reaction chamber and valves mounted on the piping, O-rings made of fluorine-containing rubber and other materials are typically used to seal the inside from the external environment. The above-mentioned overheating caused by contact with fluorine active species destroys O-rings. Particularly, within the above-mentioned valve for pressure regulation, there is a risk that O-rings are broken off. If the O-rings are damaged, piping airtightness cannot be maintained. As a result, impurity contamination occurs due to outside air penetration into the reaction chamber, or leakage of gases harmful to humans, such as fluorine active species, takes place. Deteriorated O-ring material flows within the piping to cause internal contamination to a semiconductor-processing device including the reaction chamber. Also, if fluorine-containing rubber (e.g., VITON® or Karlez®) that is used for a movable part within the piping such as a shaft seal for the valves is overheated, it deteriorates, loses its elasticity and hinders mobility of the parts.
- is necessary to replace damaged parts frequently and this increases the operation cost. Needless to say, parts replacement reduces the operation hours of the device and lowers productivity.
- On the other hand, if a valve with a stoppage function is not provided between the remote plasma discharge chamber and the downstream reaction chamber, reaction gas used when forming a film onto substrate within the reaction chamber can flow backward or diffuse from the deposition chamber to the remote plasma discharge chamber. The reaction gas can form solid substances on the remote plasma discharge chamber surfaces in a powdered state due to imperfect reaction. If these solid substances then in a powder state flow into the reaction chamber when forming a film, particles can contaminate the substrate. Moreover, reaction gas adsorbed on the internal surface of the remote plasma discharge chamber raises the ignition electric potential required for plasma discharge in the remote plasma discharge chamber. If the ignition electric potential value becomes higher than the design value for the remote plasma discharge chamber, it is possible that plasma discharge cannot be executed. To prevent backward flow and diffusion of reaction gas, the remote plasma discharge chamber is desirably sealable from the reaction chamber. However, this would obviously cause reduction of fluorine active species that can reach the reaction chamber and a satisfactory cleaning rate and performance can not be achieved.
- Basic Structures of CVD Devices of the Preferred Embodiments
- A CVD device according to this invention includes the following embodiments and can resolve the above problems:
- The CVD device comprises a reaction chamber, a plasma discharge chamber that is provided remotely from the reaction chamber (i.e., a remote plasma source), and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy. The activated cleaning gas is brought into the inside of the reaction chamber through the piping and etches solid substances that adhere to the inside of the reaction chamber as a consequence of film formation, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following:
- (a) The remote plasma discharge chamber generates active species using radio-frequency oscillating output energy of a preselected frequency;
- (b) the piping is made of materials that are not corroded by the active species; or
- (c) the piping is provided with a through-flow type valve.
- In several of the embodiments, the device further comprises a support provided within the reaction chamber, which supports an object to be or being processed, and a gas-emitting plate provided at a position facing the support within the reaction chamber in order to uniformly supply reaction gas to the object being processed to form a film onto the object being processed, wherein the activated cleaning gas is supplied through piping into the reaction chamber from holes provided on the gas-emitting plate.
- In another embodiment, the device is configured for single-pass, horizontal, laminar gas flow through a cold-wall reactor. The device further comprises a susceptor provided within the reaction chamber, which supports an object to be processed and which adsorbs radiant heat provided through transparent chamber walls. The activated cleaning gas is supplied through an inlet in the chamber walls upstream of the susceptor.
- Although each of (a), (b), and (c) can be adopted independently of each other, a combination of (a) and (b), for example, can include any of the following features:
- The preselected frequency is about 300 kHz-500 kHz.
- The active species is fluorine activated species.
- The inside surface of the piping is made of fluorine-passivated stainless steel, aluminum, or aluminum alloy.
- The CVD device includes a gas conduit to bring reaction gas into the reaction chamber separately from the cleaning gas.
- The CVD device is configured for plasma CVD with structures for in situ plasma generation.
- One end of the gas conduit is linked with the reaction chamber.
- One end of the gas conduit is linked with the piping.
- The CVD device includes a valve at a predetermined position of the piping between the remote plasma discharge chamber and the reaction chamber.
- The inside of the valve is made of fluorine-passivated aluminum.
- One end of the gas conduit is linked to the piping at a predetermined position between the valve and the reaction chamber.
- For example, a combination of (a) and (c) can include any of the following features:
- The preselected frequency is 300 kHz-500 kHz.
- The active species is fluorine activated species.
- The piping and valve are heated at a predetermined temperature.
- A gas conduit to bring reaction gas into said reaction chamber is included.
- One end of the gas conduit is linked to the reaction chamber.
- One of the gas conduit is linked to the piping.
- A combination of (a), (b), and (c) can be used to enhance the advantageous effects. The advantages of such features are described above.
- Main Structures
- A first embodiment will be explained with reference to FIG. 1.
- FIG. 1 is a schematic cross section of an exemplary a plasma CVD device according to this embodiment. A
plasma CVD device 1, which is used to form a thin film on asemiconductor wafer 9 or other substrate, comprises areaction chamber 2, asupport 3 provided within the reaction chamber to support thesemiconductor wafer 9, ashowerhead 4 that is positioned to face thesupport 3 and is used to jet out reaction gas uniformly onto thesemiconductor wafer 9, anoutlet 20 to exhaust reaction gases and byproducts from thereaction chamber 2, and a remoteplasma discharge chamber 13. The remoteplasma discharge chamber 13 is positioned remotely fromreaction chamber 2 and is linked to theshowerhead 4 via piping 14 andvalve 15. The remoteplasma discharge chamber 13 has characteristics wherein it generates active species using radio-frequency oscillating output energy of the designated frequency and the piping 14 is made of materials that are not corroded by the active species. - On one side of the
reaction chamber 2, anopening 19 is formed and the reaction chamber is connected to a transfer chamber (not shown) to bring a semiconductor wafer or other substrate in and carry it out via agate valve 18. - The
support 3 that is provided within thereaction chamber 2 and is used to place thesemiconductor wafer 9 is made of anodized aluminum or aluminum alloy and is grounded 27 to constitute one side of an electrode of plasma discharge. Thereaction chamber 2 of the illustrated embodiment is thus a plasma CVD chamber configured for in situ (in chamber) plasma generation. Within the illustratedsupport 3, a ring-shape heating element 26 is embedded and the semiconductor wafer's temperature is controlled at a predetermined temperature using a temperature controller (not shown). Thesupport 3 is connected to adriving mechanism 25 that moves thesupport 3 up and down through asupport piston 29. - Within the
reaction chamber 2, theshowerhead 4 is provided at a position facing thesupport 3. In theshowerhead 4, thousands of fine holes are provided to inject reaction gas onto thesemiconductor wafer 9. Theshowerhead 4 is electrically connected to a radio-frequency oscillator 8 via matchingcircuit 10 and constitutes another electrode of plasma discharge. To bring reaction gas to be used for film formation from theshowerhead 4, areaction gas conduit 11 is connected to thepiping 14. The number of thegas conduit 11 is not limited to one. According to the type of reaction gas, the necessary number of gas conduits can be installed. One end of thegas conduit 11 constitutes agas inlet port 5 to cause reaction gas to flow in and the other end constitutes a reactiongas exit port 7 to cause gas to flow out to theshowerhead 4. In the middle of thereaction gas conduit 11, a mass flow controller (not shown) andvalve 6 are positioned. - On the side wall of the
reaction chamber 2, anoutlet 20 is provided. Theoutlet 20 is connected to a vacuum exhaust pump (not shown) throughpiping 17. Between theoutlet 20 and the vacuum pump, a conductance-controllingvalve 21 is provided to regulate pressure within thereaction chamber 2. The conductance-controllingvalve 21 is electrically connected to anexternal regulator 28. - Additionally, a
pressure gauge 28 a is preferably provided to measure pressure within thereaction chamber 2. Thispressure gauge 28 a is electrically connected to theregulator 28. - Remote Plasma Discharge Chamber
- The remote
plasma discharge chamber 13 according to this embodiment is remotely provided from thereaction chamber 2. The remoteplasma discharge chamber 13 is made of anodized aluminum alloy. The remoteplasma discharge chamber 13 is linked to theshowerhead 4 within the reaction chamber throughpiping 14. In the middle of the piping 14, avalve 15 is provided. The internal surface of thispiping 14 is preferably made of fluorine-passivated stainless steel, but aluminum or fluorine-passivated aluminum alloy can be also used. Also similarly, the internal surface of thevalve 15 is made of fluorine-passivated aluminum alloy. One end of the piping 14 constitutes a cleaninggas inlet port 12 to cause cleaning gas to flow in and the other end constitutes a cleaninggas exit port 16 to bring cleaning gas into theshowerhead 4. - For cleaning gas flowing in from the cleaning
gas inlet port 12, fluorine-containing gases such as nitrogen fluoride, carbon fluoride and chlorine fluoride, mixed gas of nitrogen or carbon fluoride or mixed gases of the foregoing gases with oxygen, nitrogen or inert gas can be used. Specifically, mixed gases of NF3, CIF3, CF4, C2F6, C3F8 with oxygen, mixed gas of NF3 with nitrogen, mixed gas of NF3 with dilute gas can be used. For dilute gas, helium, argon, neon, xenon, or krypton can be used. - An
observation window 23 is preferably also provided on the side wall of thereaction chamber 2 and a charged coupled device (CCD)detector 22 is mounted on the observation window. Furthermore, amonitor 24 is installed on theCCD detector 22. Theobservation window 23 is preferably made of sapphire, but aluminum oxide can also be used. Also, in addition to the CCD detector, a photomultiplier tube or a photoelectric converter can also be used. - Plasma CVD Operation
- Operation of the plasma CVD device according to this embodiment is explained. Operation is roughly divided into two sequences: (1) a thin film formation sequence, forming a film on the
semiconductor wafer 9, and (2) a cleaning sequence, cleaning surfaces on the inside of the reaction chamber. The thin film formation sequence is illustrated as forming silicon oxide on thesemiconductor wafer 9 as an example. - First, the inside of the
reaction chamber 2 is evacuated and exhausted by an external vacuum pump (not shown) through theoutlet 20. Pressure within the reaction chamber can be regulated in a range from 1 Torr to 8 Torr by the degree of opening of the conductance-controllingvalve 21. - Next, the
support 3 heated by theheating element 26 controls thesemiconductor wafer 9 at a designated temperature, preferably 300° C.-420° C. (572° F.-788° F.), using the temperature controller (not shown). - Subsequently, reaction gases, SiH4, NH3 and N2, the flow of which is controlled by the mass flow controller (not shown), flow in from a reaction
gas inlet port 5 and are brought into theshowerhead 4 through thegas exit ports 7 after passing thevalve 6. In the embodiment of FIG. 2, described in more detail below, reaction gases SiH4 and NH3 flow in from the reactiongas inlet port 5 and only N2 flows in from a cleaninggas inlet port 12. In this case, an influx of SiH4 and NH3 gases into the remoteplasma discharge chamber 13 is prevented by N2 gas that flows in from theinlet port 12, even though thevalve 15 is not provided. Mixed reaction gases are injected uniformly from the fine holes formed at the lower side of theshowerhead 4 onto thesemiconductor wafer 9. - Radio-frequency power of 13.56 MHz or mixed power of 13.56 MHz and 430 kHz is applied to the
showerhead 4 by the radio-frequency oscillator 8. As a result, a plasma reaction domain is formed in the space between theshowerhead 4, which is serves as one electrode for in situ plasma generation within thereaction chamber 2, and thesupport 3, which serves as the other electrode. Molecules of the reaction gas within that domain are activated and ionized by plasma energy. Ionized molecules cause chemical reaction onsemiconductor substrate 9 and silicon nitride is formed. - Upon termination of thin film formation processing, the
valve 6 is closed and at the same time thegate valve 18 is opened. The processedsemiconductor wafer 9 is carried out to an adjoining transfer chamber (not shown) by an automatic transfer robot (not shown) through theopening 19. After thereaction chamber 2 is evacuated and exhausted, an unprocessed semiconductor wafer is carried in from the transfer chamber, thegate valve 18 is closed, and the above sequence is repeated. - While the thin film formation sequence is continuously preformed, undesirable products adhere to the inner wall of the
reaction chamber 2 and the surface and sides of the support. The undesirable products gradually accumulate, slough and float within the reaction chamber to cause particle contamination. Consequently, it is necessary to clean the inside of thereaction chamber 2 regularly (for example, after each thin film formation processing between wafer unloading and loading the next wafer). In the following, the cleaning sequence to remove silicon nitride adhering to the inner wall of thereaction chamber 2 is explained. - Cleaning Operation
- Mixed gas of NF3 and argon, which is used as cleaning gas, is provided at a designated flow rate into the cleaning
gas inlet port 12 and is brought into the remoteplasma discharge chamber 13. Preferred flow rates for the fluorine-containing gas are between about 0.5 slm and 1.5 slm; preferred flow rates for the carrier gas are about 0.5 slm and 4 slm. Desirably, the inert carrier gas is about 2 to 3 times the flow of the fluorine-containing gas. Within the remoteplasma discharge chamber 13, radio-frequency output from 300 kHz to 500 kHz is applied to the flowing cleaning gas with power from 1,000 W to 5,000 W. With this energy, cleaning gas is dissociated and activated at a given efficiency and fluorine active species is generated. - Generated fluorine active species is brought into the
showerhead 4 through the piping 14 and thevalve 15, the inside of which has been fluorine-passivated. Fluorine active species that is injected into thereaction chamber 2 from theshowerhead 4 causes chemical reaction with solid silicon nitride adhering to the inner wall and other surfaces of thereaction chamber 2 and changes the solid adhesive substance to a gaseous substance. As a result, the number of gas molecules within the reaction chamber increases, but pressure within the reaction chamber is always maintained at a specific value by acontroller 28 that controls the opening size or angle of the conductance-controllingvalve 21 in real-time in response to pressure within the reaction chamber measured by thepressure gauge 28 a. - Initially when fluorine active species flows into the
reaction chamber 2, fluorine active species and solid silicon nitride react violently and emit light. This emission of light is detected by the CCD detector through theobservation window 23 and can be confirmed by themonitor 24. As time elapses, reaction between fluorine active species and solid silicon nitride subsides and it becomes impossible to confirm emission of light. Moreover, the opening angle of the conductance-controllingvalve 21 approaches a certain value. When this opening angle nearly matches an opening angle of a value (saved in a memory) predetermined for a state where no adhesive substances exist, thecontroller 28 senses completion of cleaning and stops supplying NF3 and at the same time continues to supply only argon gas. Argon gas completely purges fluorine active species that remains within the remote plasma electric charge chamber, within the reaction chamber and within the piping 14, concluding the cleaning sequence. - Structures
- FIG. 2 shows another example according to this embodiment. Unlike the
plasma CVD device 1 of FIG. 1, aplasma CVD device 30 of FIG. 2 includes a link between one end of thereaction conduit 11 and piping 14 at ajunction 31 positioned between the remoteplasma discharge chamber 13 and agas exit port 32. Reaction gas and cleaning gas are mixed at thejunction 31 and are brought into ashowerhead 4 from onegas inlet port 32. Thedevice 30 can be otherwise similar to thedevice 1 of FIG. 1. - In the illustrated example, the
valve 15 is set up at the plasma discharge chamber side before thejunction 31. For the internal surface of the piping 14 and thevalves valves - As a variation of the implementation example shown in FIG. 2, the
valve 15 can be removed. In this case, one end of thereaction gas conduit 11 is connected to the piping 14 at a designated position between the remoteplasma discharge chamber 13 and thegas exit port 32 and constitutes a junction. - Plasma CVD operation and cleaning operation can be conducted as described for
Embodiment 1. - Main Structures
- FIG. 3 is a schematic diagram showing a cross sectional view of a preferable implementation example of a plasma CVD device according to this embodiment. A
plasma CVD device 1, which is used to form a thin film on asemiconductor wafer 9 or other substrate, comprises areaction chamber 2, asupport 3 provided within thereaction chamber 2 to place thesemiconductor wafer 9, ashowerhead 4 that positioned facing thesupport 3 and is used to inject reaction gas uniformly onto thesemiconductor wafer 9, anoutlet 20 to exhaust the inside ofreaction chamber 2. The remoteplasma discharge chamber 13 is positioned remotely fromreaction chamber 2 and is linked to theshowerhead 4 via piping 14 andvalve 15. The remoteplasma discharge chamber 13 has characteristics wherein it generates active species using radio-frequency oscillating output energy of the designated frequency. - On one side of the
reaction chamber 2, anopening 19 is formed and thereaction chamber 2 is connected to a transfer chamber (not shown) to bring a semiconductor wafer or other substrate in and carry it out via agate valve 18. - The
support 3 that is provided within thereaction chamber 2 and is used to place thesemiconductor wafer 9 is made of anodized aluminum or aluminum alloy and is grounded 27 to constitute one electrode for in situ plasma discharge. Thereaction chamber 2 of the illustrated embodiment is thus a plasma CVD chamber configured for in situ (in chamber) plasma generation. Within thesupport 3, a ring-shape heating element 26 is embedded and the semiconductor wafer's temperature is controlled at a designated temperature using a temperature controller (not shown). Thesupport 3 is connected to adriving mechanism 25 that moves thesupport 3 up and down through asupport piston 29. - The
support 3 that supports thesemiconductor wafer 9 is not necessarily limited to being made of anodized aluminum or aluminum alloy; instead a ceramic heater can be used. The ceramic heater has a ceramic plate, and a resistance heating element embedded and a metal element forms one electrode for in situ plasma discharge. The metal element is grounded to the electrode of plasma discharge if possible. A ceramic plate has excellent corrosion resistance to aluminum nitride, magnesium oxide, aluminum oxide, etc. and is made of material that has sufficient thermal conductivity to serve as a heater. For the resistance-heating element, tungsten is used. For the metal element constituting an electrode for in situ plasma discharge, tungsten or molybdenum can be used. - Within the
reaction chamber 2, theshowerhead 4 is provided at the position facing thesupport 3. In theshowerhead 4, thousands of fine holes are provided to inject reaction gas onto thesemiconductor 9. Theshowerhead 4 is electrically connected to a radio-frequency oscillator 8 via matchingcircuit 10 and makes up another electrode for the in situ plasma discharge. To bring reaction gas to be used for film formation from theshowerhead 4, areaction gas conduit 11 is connected to piping 14. The number of thegas conduit 11 is not limited to one. According to the type of reaction gas, the necessary number of gas conduits can be installed. One end of thegas conduit 11 constitutes agas inlet port 5 to cause reaction gas to flow in and other end is connected to the piping 14 at thejunction 31. Reaction gas is brought in fromgas exit port 7 to the inside of theshowerhead 4 via thepiping 14. A mass flow controller (not shown) and thevalve 6 are set up in the middle of thereaction gas conduit 11. - On the side wall of the
reaction chamber 2, anoutlet 20 is provided. Theoutlet 20 is connected to a vacuum exhaust pump (not shown) throughpiping 17. Between theoutlet 20 and the vacuum pump, a conductance-controllingvalve 21 is provided to regulate pressure within thereaction chamber 2. The conductance-controllingvalve 21 is electrically connected to anexternal regulator 28. - A
pressure gauge 28 a is preferably provided to measure pressure within the reaction chamber. The pressure gauge is electrically connected to theregulator 28. - Remote Plasma Discharge Chamber
- The remote
plasma discharge chamber 13 of this embodiment, as noted, is positioned remotely from thereaction chamber 2. The remoteplasma discharge chamber 13 is a radio-frequency electric discharge device that uses frequency in a radio frequency range from 300 kHz to 500 kHz. It is not desirable to use microwaves of around 2.45 GHz for the frequency of the remote plasma discharge chamber as mentioned earlier, because it requires an electric discharge chamber that deteriorates easily. In addition, if a frequency range from 1 MHz to 27 MHz is used, an automatic matching transformer must be installed between the radio-frequency oscillator and the remote plasma discharge chamber to realize stable plasma discharge. Adding this automatic matching transformer increases cost. At the same time, this is not desirable because it requires installing a remote plasma discharge chamber and an automatic matching transformer near the reaction chamber and because it may make maintenance work difficult by increasing the size of the entire semiconductor-processing device or losing space between the components. A frequency range of 300 kHz to 500 kHz efficiently enables activation of the cleaning gas, allows a plasma discharge chamber made of materials that do not easily deteriorate and realizes a more compact device itself. To realize a more stable plasma discharge, preferably the range is from 350 kHz to 450 kHz and more preferably it is 400 kHz to 430 kHz. - The remote
plasma discharge chamber 13 is preferably made of anodized aluminum alloy. In the illustrated embodiment, the remoteplasma discharge chamber 13 is linked to theshowerhead 4 within thereaction chamber 2 through thepiping 14. In the middle of the piping 14, avalve 15 is provided. The piping 14 is a straight-line structure. Its internal diameter is at least ½ inch, but preferably more than one inch. In addition, thevalve 15 is characterized in that no structure to restrict the flow exists within the passage when it is open. The internal diameter of the open passage is not much extremely smaller than the piping 14 and preferably is the same. Consequently, when cleaning gas flows from the remote plasma discharge chamber to the reaction chamber, no appreciable pressure loss arises in thepiping 14 and at thevalve 15. Desirably, the pressure drop is less than about 0.25 Torr (or less than about 5% of the inlet pressure) across thevalve 15, more preferably less than about 0.1 Torr (or less than about 1% of the inlet pressure). - The
piping 14 is made of aluminum or aluminum alloy, but corrosion-resistant stainless steel can also be used. One end of the piping 14 is connected to the remoteplasma discharge chamber 13 and other end constitutes agas exit port 7 used to bring cleaning gas into theshowerhead 4. Further, a cleaninggas inlet port 12 is provided to bring cleaning gas into the remoteplasma discharge chamber 13. After being controlled at the designated flow by the mass flow controller (not shown), cleaning gas is brought into the cleaninggas inlet port 12. - The
piping 14 and thevalve 15 are preferably heated by a heater (not shown) to a temperature that prevents reaction gas and cleaning gas from adsorbing of the surfaces thereof. The temperature of the piping 14 andvalve 15 can be selected according to the types of reaction gas and cleaning gas. Further, if needed, portions of theconduit 11, thevalve 6 and thegas inlet port 5 can also be heated by heaters (not shown) at a designated temperature. - Through-Flow Type Valve
- In FIG. 4, the cross-section of the
valve 15 used in the present embodiments is shown. FIG. 4(a) shows a closed state of thevalve 15 while FIG. 4(b) shows an open state of thevalve 15. Thevalve 15 comprises abody 24 made of aluminum or aluminum alloy. Avalve body 30 is fixed to ashaft 32 by abolt 32. On thevalve body 30, an O-ring 34, which attains airtightness by sealing the inside 35 of thebody 24, is mounted. At anupstream opening 22 of thevalve 15, portions of the piping 14 (FIG. 3) to be connected to the remote plasma discharge chamber can be mounted. At adownstream opening 23, portions the piping 14 to be connected to thegas exit port 7 can be mounted. The mounting direction at theopenings body 24 of thevalve 15 is not limited to aluminum or aluminum alloy. Other materials that have excellent resistance to corrosion, such as stainless steel, can also be used. Thevalve body 30 is made of aluminum or aluminum alloy, but metals excellent in corrosion resistance such as nickel, titanium, stainless steel or resins excellent in corrosion resistance such as polyimide resin can be used. Additionally, thebolt 33 and theshaft 32 are made of metals that have excellent resistance to corrosion, such as aluminum, aluminum alloy, nickel and stainless steel. The O-ring 34 comprises an elastic material that is resistant to deterioration by the flowing gas to be used. The O-ring 34 preferably comprises fluorine-containing rubber, and more preferably a perfluoroelastomer. - Regarding the
valve 15 used in this embodiment, in its closed state, thevalve body 30 is at the position shown in FIG. 4(a). The O-ring 34 mounted on thevalve body 30 seals the inside 35 of thebody 24. As shown in FIG. 4(b), when thevalve 15 is open, thevalve body 30 is pulled up into thespace 36 within thebody 24 of thevalve 15 and is stored. The vertical motion of thevalve body 30 is performed by moving theshaft 32 by a driving mechanism (not shown) of thevalve 15. Importantly, as shown in FIG. 4(b), when thevalve 15 is open, thevalve body 30 and theshaft 32 are stored entirely within thespace 36 and are completely removed from the passage defined between theopening 23 and theopening 22. Thus, when thevalve body 30 is in the position of FIG. 4(a), there is no structure hindering cleaning gas flowing through thevalve 15. - Referring again to FIG. 3, for cleaning gas flowing in from the cleaning
gas inlet port 12, fluorine-containing gases such as nitrogen fluoride, carbon fluoride and chlorine fluoride, mixed gas of nitrogen or carbon fluoride or mixed gases of those gases with oxygen or inactive gas can be used. Specifically, mixed gases of NF3, CIF3, CF4, C2F6, C3F8 with oxygen, mixed gas of NF3 with nitrogen, mixed gas of NF3 with dilute gas can be used. For dilute gas, helium, argon, neon, xenon, or krypton can be used. - Plasma CVD operation
- Referring still to FIG. 3, operation of the plasma CVD device according to this embodiment is explained. As described above, operation is roughly divided into two sequences: (1) thin film formation on the
semiconductor wafer 9, and (2) cleaning the inside of the reaction chamber. The thin film formation sequence is explained by reference to forming silicon oxide onto thesemiconductor wafer 9 as an example. - First, the inside of the
reaction chamber 2 is evacuated and exhausted by an external vacuum pump (not shown) through theoutlet 20. Pressure within the reaction chamber can be regulated in a range from 1 Torr to 8 Torr by the angle of opening of the conductance-controllingvalve 21. - Next, the
support 3 heated by theheating element 26 controls thesemiconductor wafer 9 at a designated temperature, preferably 300° C.-420° C. (572° F.-788° F.) using the temperature controller (not shown). - Subsequently, reaction gases, SiH4, NH3 and N2, the flow of which is controlled by the mass flow controller (not shown), flow in from the reaction
gas inlet port 5 and are brought into theshowerhead 4 through thegas exit port 7 after passing through thevalve 6. In this case, an influx of SiH4, NH3 and N2 gases into the remoteplasma discharge chamber 13 is prevented by closing thevalve 15. The reaction gases are injected uniformly from the fine holes formed at the lower side of theshowerhead 4 onto thesemiconductor wafer 9. - Radio-frequency power of 13.56 MHz or mixed power of 13.56 MHz and 430 kHz is applied to the
showerhead 4 by the radio-frequency oscillator 8. As a result, a plasma reaction domain is formed in the space between theshowerhead 4, which constitutes one electrode, and thesupport 3, which constitutes another electrode. Molecules of the reaction gas within that domain are activated by plasma energy and silicon nitride is formed on thesemiconductor substrate 9. - Upon termination of thin film formation processing, the
valve 6 is closed and at the same time thevalve 18 is opened. The processedsemiconductor wafer 9 is carried out to an adjoining transfer chamber (not shown) by an automatic transfer robot (not shown) through theopening 19. After thereaction chamber 2 is evacuated and exhausted, an unprocessed semiconductor wafer is carried in from the transfer chamber, thegate valve 18 is closed, and the above sequence is repeated. - While the thin film formation sequence is continuously preformed, undesirable products adhere to the inner wall of the
reaction chamber 2 and the surface and sides of the support. Undesirable products gradually accumulate, slough, and float within the reaction chamber to cause particle contamination. Consequently, it is necessary to clean the inside of thereaction chamber 2 regularly (for example, every after thin film formation sequence between wafer unloading and loading the next wafer). In the following, a cleaning sequence to remove silicon nitride adhering to the inner wall of thereaction chamber 2 is explained. - Cleaning Operation
- Mixed gas of NF3 and argon that is used as cleaning gas is controlled at the designated flow, flows into the cleaning
gas inlet port 12 and is brought into the remoteplasma discharge chamber 13. Preferred flow rates for the fluorine-containing gas are between about 0.5 slm and 1.5 slm; preferred flow rates for the carrier gas are about 0.5 slm and 4 slm. Desirably, the inert carrier gas is about 2 to 3 times the flow of the fluorine containing gas. Inside of the remoteplasma discharge chamber 13, radio frequency (RF) output from 300 kHz to 500 kHz is applied to cleaning gas with electricity from 1,000 W to 5,000 W. The value of radio frequency output is set so that unnecessary products adhering to the inside of thereaction chamber 2 are removed at an acceptable rate. To realize long-term quality maintenance of the remote plasma discharge chamber and to achieve high efficiency in generating fluorine active species, a preferable range for radio frequency output range is from 1,500 W to 3,000 W and a more preferred range is from 2,000 W to 3,000 W. With this energy, cleaning gas is dissociated and activated at a certain efficiency to generate fluorine active species. - Generated fluorine active species is brought into the
showerhead 4 through the piping 14 and thevalve 15. Fluorine active species that is jetted out uniformly into the inside of thereaction chamber 2 from theshowerhead 4 causes chemical reaction with solid silicon nitride adhering to the inner wall and other surfaces of the reaction chamber and changes the solid adhesive substance to a gaseous substance. As a result, the number of gas molecules within the reaction chamber increases, but pressure within the reaction chamber is maintained at a specific value by acontroller 28 that controls the opening angle of theconductance controlling valve 21 in real-time in response to pressure values within the reaction chamber measured by thepressure gauge 28 a. - The
piping 14 and thevalve 15 are preferably heated at a temperature from 100° C. to 200° C. (from 212° F. to 392° F.), facilitating rapid purging of the gas flowing inside. When NH3 gas is used to form silicon nitride on thesemiconductor wafer 9 and cleaning gas containing fluorine active species is used to clean thereaction chamber 2, solid ammonium fluoride is generated if NH3 and fluorine active species are mixed, and the inside of the piping 14 is contaminated. To remove each gas quickly from the inside of the piping 14, the piping 14 and thevalve 15 are more preferably heated at least at 120° C. (248° F.). When TEOS, [Si(OC2H5)4] is used as reaction gas, heating thepiping 14 and thevalve 15 to at least 120° C. (248° F.) also prevents liquifying TEOS as it flows. The temperature of thevalve 15 and the piping 14 is determined according to the type of reaction gas to flow into thereaction chamber 2, but restricted by the heat-resistance temperature of thevalve 15. In the illustrated embodiment, the upper limit of the temperature is about 200° C. (392° F.). - In one experiment, when 1 slm of NF3 and 2 slm of Ar were used for the cleaning gas, with the pressure within the reaction chamber set between 1 Torr and 1.5 Torr. Fluorine active species were generated by applying 400 kHz radio frequency power about 2,700 W to the inside of the remote plasma discharge chamber, undesirable silicon nitride adhering to the inner wall of the
reaction chamber 2 was removed at greater than 2.0 microns/minute, more particularly at about 2.5 microns/minute. - In another experiment, when 0.75 slm of NF3 and 1.5 slm of Ar were used, with the pressure of the reaction chamber set at about 1 Torr, generating fluorine active species by applying 2,400 W of 400 kHz radio frequency power to the inside of the remote plasma discharge chamber resulted in removal of undesirable silicon nitride from inner walls of the
reaction chamber 2 at a rate of about 2.0 micron/minute. - In another experiment, in order to remove undesirable silicon oxide, formed from TEOS as raw material, adhered inside the
reaction chamber plasma discharge chamber 13. The products of this plasma, including activated fluorine species, were introduced toreaction chamber 2 from theremote plasma chamber 13. The silicon oxide was removed at a rate of about 1.5 ?m/min. - The above concludes the explanation of the cleaning sequence.
- Main Structures
- With reference now to FIG. 5, a chemical vapor deposition (CVD)
device 110 is illustrated in accordance with a fourth embodiment of the invention. Unlike the previously described embodiments, the illustratedCVD reactor 110 includes a cold-wall reaction chamber 112. In the illustrated embodiment, the deposition orreaction chamber 112 comprises quartz, which is transparent to certain wavelengths of radiant energy, which will be understood in view of the description of the heating system described below. - While originally designed to optimize epitaxial deposition of silicon on a single substrate at a time, the superior processing control has been found to have utility in thermal and/or remote plasma CVD of a number of different materials. The basic configuration of the
device 110 is available commercially under the trade name Epsilon® from ASM America, Inc. of Phoenix, Ariz. - A plurality of radiant heat sources is supported outside the
chamber 112 to provide heat energy in thechamber 112 without appreciable absorption by thequartz chamber 112 walls. While the preferred embodiments are described in the context of a “cold wall” CVD reactor for processing semiconductor wafers, it will be understood that the processing methods described herein will have utility in conjunction with other heating/cooling systems, such as those employing inductive or resistive heating. - The illustrated radiant heat sources comprise an upper heating assembly of elongated tube-type
radiant heating elements 113. Theupper heating elements 113 are preferably disposed in spaced-apart parallel relationship and also substantially parallel with the reactant gas flow path through theunderlying reaction chamber 112. A lower heating assembly comprises similar elongated tube-typeradiant heating elements 114 below thereaction chamber 112, preferably oriented transverse to theupper heating elements 113. Desirably, a portion of the radiant heat is diffusely reflected into thechamber 112 by rough specular reflector plates (not shown) above and below the upper andlower lamps spot lamps 115 supply concentrated heat to the underside of the substrate support structure (described below), to counteract a heat sink effect created by cold support structures extending through the bottom of thereaction chamber 112. - Each of the elongated tube
type heating elements reaction chamber 112 without appreciable absorption. As is known in the art of semiconductor processing equipment, the power of thevarious lamps - A substrate, preferably comprising a
silicon wafer 116, is shown supported within thereaction chamber 112 upon asubstrate support structure 118. Note that, while the substrate of the illustrated embodiment is a single-crystal silicon wafer, it will be understood that the term “substrate” broadly refers to any workpiece on which a layer is to be deposited. Moreover, cleaning and prevention of contamination is often required in depositing layers on other substrates, including, without limitation, the deposition of optical thin films on glass or other substrates. - The illustrated
support structure 118 includes asubstrate holder 20, upon which thewafer 116 rests, and asupport spider 122. Thespider 122 is mounted to ashaft 124, which extends downwardly through atube 126 depending from the chamber lower wall. Preferably, thetube 126 communicates with a source of purge or sweep gas which can flow during processing, inhibiting process gases from escaping to the lower section of thechamber 112. - A plurality of temperature sensors are positioned in proximity to the
wafer 116. The temperature sensors may take any of a variety of forms, such as optical pyrometers or thermocouples. The number and positions of the temperature sensors are selected to promote temperature uniformity, as will be understood in light of the description below of the preferred temperature controller. Preferably, however, the temperature sensors directly or indirectly sense the temperature of positions in proximity to the wafer. - In the illustrated embodiment, the temperature sensors comprise thermocouples, including a first or
central thermocouple 128, suspended below thewafer holder 120 in any suitable fashion. The illustratedcentral thermocouple 128 passes through thespider 122 in proximity to thewafer holder 120. Thedevice 110 further includes a plurality of secondary or peripheral thermocouples, also in proximity to thewafer 116, including a leading edge orfront thermocouple 129, a trailing edge orrear thermocouple 130, and a side thermocouple (not shown). Each of the peripheral thermocouples is housed within aslip ring 132, which surrounds thesubstrate holder 120 and thewafer 116. Each of the central and peripheral thermocouples are connected to a temperature controller, which sets the power of thevarious heating elements - In addition to housing the peripheral thermocouples, the
slip ring 132 absorbs and emits radiant heat during high temperature processing, such that it compensates for a tendency toward greater heat loss or absorption at wafer edges, a phenomenon which is known to occur due to a greater ratio of surface area to volume in regions near such edges. By minimizing edge losses, theslip ring 132 can reduce the risk of radial temperature non-uniformities across thewafer 116. Theslip ring 132 can be suspended by any suitable means. For example, the illustratedslip ring 132 rests uponelbows 134, which depend from afront chamber divider 36, and a rear chamber divider 38. Thedividers 36, 38 desirably are formed of quartz. In some arrangements, therear divider 138 can be omitted. - The illustrated
reaction chamber 112 includes aninlet port 140 for the injection of reactant and carrier gases for deposition by CVD, and thewafer 116 can also be received therethrough. Anoutlet port 142 is on the opposite side of thechamber 112, with thewafer support structure 118 positioned between theinlet 140 andoutlet 142. - An
inlet component 150 is fitted to thereaction chamber 112, adapted to surround theinlet port 140, and includes a horizontally elongatedslot 152 through which thewafer 116 can be inserted. A generallyvertical inlet 154 receives gases from remote sources and communicates such gases with theslot 152 and theinlet port 140. Theinlet 154 can include gas injectors as described in U.S. Pat. No. 5,221,556, issued Hawkins et al., or as described with respect to FIGS. 21-26 in U.S. pat. application Ser. No. 08/637,616, filed Apr. 25, 1996, the disclosures of which are hereby incorporated by reference. Such injectors are designed to maximize uniformity of gas flow for the single-wafer reactor. - An
outlet component 156 similarly mounts to theprocess chamber 112 such that anexhaust opening 158 aligns with theoutlet port 142 and leads toexhaust conduits 159. Theconduits 159, in turn, can communicate with suitable vacuum means (not shown) for drawing process gases through thechamber 112. In the preferred embodiment, process gases are drawn through thereaction chamber 112 and a downstream scrubber (not shown). A pump or fan is preferably included to aid in drawing process gases through thechamber 112, and to evacuate the chamber for low pressure processing. - Wafers are preferably passed from a handling chamber (not shown), which is isolated from the surrounding environment, through the
slot 152 by a pick-up device. The handling chamber and theprocessing chamber 112 are preferably separated by a gate valve (not shown) of the type disclosed in U.S. Pat. No. 4,828,224, the disclosure of which is hereby incorporated herein by reference. - Remote Plasma Discharge Chamber
- The
preferred device 110 also includes a source of excited species positioned upstream from thechamber 112. The excited species source of the illustrated embodiment comprises a power generator connected to a remoteplasma discharge chamber 13. The remoteplasma discharge chamber 13 is connected to thedeposition chamber 112 by way of piping 14 having avalve 15 thereon. One end of the piping 14 constitutes a cleaninggas inlet port 12 to cause cleaning gas to flow into the remoteplasma discharge chamber 13. The other end of the piping 14 constitutes a cleaninggas exit port 16 to bring cleaning gas into the horizontal flow path defined between theinlet 140 andoutlet 142 of thereaction chamber 112. - The
inlet end 12 of the piping 14 is shown connected to multiple gas sources. In particular, a source of cleaninggas 163 is coupled to theinlet end 12 of the piping for introduction of cleaning gas into the remoteplasma discharge chamber 13. A source ofcarrier gas 164 is also preferably coupled to thegas line 12. As is known in the art, thegas sources reaction chamber 112. - One or more further branch lines165 (one shown) can also be provided for additional reactants. Advantageously, source gases connected to the branch line(s) can be connected to sources useful for plasma assisting deposition within the chamber. Thus, the remote
plasma discharge chamber 13 can be used not only for cleaning, but also for providing activated reactants for plasma CVD. Alternatively, a separate remote plasma source can be provided for deposition reactants. - The
chamber 13, piping 14 andvalve 15 can be as described above with respect to any of the embodiments of FIGS. 1-4. As noted above, thevalve 15 can be optionally omitted, and replaced with a flow of carrier or inert gas through the remote plasma discharge chamber 13 (without applying dissociating energy) during the deposition phase of the process. - CVD Operation
- The
device 110 of FIG. 5 can be used for depositing films of various compositions by CVD, including epitaxial silicon, polysilicon, silicon oxide and silicon nitride. Advantageously, the remoteplasma discharge chamber 13 can provide activated reactants for assisting reactions in CVD, thus lowering thermal needs for this deposition. - In an exemplary silicon nitride deposition, about 1.5 slm ammonia (NH3) and 15 sccm silane (SiH4) are introduced. Nitrogen continues to flow at the same flow rate, and temperature and pressure are maintained at about 780?C and 50 Torr. Ammonia and silane flow are continued for about 90 seconds, reacting at the substrate surface to deposit 430 a layer of silicon nitride with a thickness of about 3 nm. As noted, one or more of the reactants can be activated through the remote
plasma discharge chamber 13, thus lowering the temperature for the same deposition rate. In this case, the reaction chamber pressure is preferably reduced to facilitate plasma ignition within the remote plasma discharge chamber. - In an exemplary polysilicon deposition, a carrier flow of N2 gas is maintained at about 15 slm while about 350 sccm silane is introduced. Employing disilane can advantageously improve deposition rates. Pressure continues to be maintained at about 50 Torr, and the temperature held steady at about 680?C. Within about 120 seconds, a polysilicon electrode layer of about 150 nm is deposited 637. It will be understood that the polysilicon formed by this method would be doped for appropriate conductivity after deposition 637, though in situ doping (during deposition) is also contemplated. For in situ doping, common doping sources such as phosphine, arsine or diborane can be added to the silane flow. In another arrangement, the chamber can be backfilled to about atmospheric pressure for an H2/SiH4 polysilicon process. As noted, one or more of the reactants can be activated through the remote
plasma discharge chamber 13, thus lowering the temperature for the same deposition rate. In this case, the reaction chamber pressure is preferably reduced to facilitate plasma ignition within the remote plasma discharge chamber. - In still other arrangements, the polysilicon layer is in situ doped with germanium in order to lower the electrical workfunction at the gate/dielectric interface. For example, a germane (1.5% in H2) flow of about 100 sccm to 1,000 sccm can be added to the silane flow. In this case, the temperature of the deposition is preferably maintained between about 550° C. and 650° C., more preferably at about 600° C.±15° C. A germanium content in the resulting poly-SiGe layer is about 10% to 60%. As noted, one or more of the reactants can be activated through the remote
plasma discharge chamber 13, thus lowering the temperature for the same deposition rate. In this case, the reaction chamber pressure is preferably reduced to facilitate plasma ignition within the remote plasma discharge chamber. - Chamber Cleaning Operation
- Depending upon the material to be cleaned, and materials within the chamber, fluorine active species can be provided through the remote
plasma discharge chamber 13, as described with respect to the previous embodiments. For certain depositions, the skilled artisan will appreciate that chlorine active species and/or other active species may more efficiently clean the deposited material without excessive damage to thequartz chamber 112 walls. Suitable cleaning gases following silicon deposition, for example, include HCl or NF3/Cl2 provided through the remoteplasma discharge chamber 13. Cleaning gases following silicon oxide or silicon nitride deposition can be as described with respect to the previous embodiments, and preferably include fluorine containing gases. - A process using both of the species NF3 and Cl2 at a temperature in the range of 20° C. to 800° C., and preferably 500° C. to 800° C., and at a pressure compatible with the remote plasma generator working range (typically 0.5 to 5 Torr for this process) can be performed in order to remove deposited layers formed of silicon, silicon nitride, silicon oxynitride and/or silicon dioxide. NF3 and Cl2 are dissociated when flowing through the remote
plasma discharge chamber 13 by applying between about 1,000 W and 5,000 W of radio frequency energy, preferably between about 2,000 W and 3,000 W of 300 kHz to 500 kHz energy. Typically, NF3, Cl2 and N2 flow through the remoteplasma discharge chamber 13. The N2 flow helps increasing the etch rate and increase the overall gas velocity. The NF3:Cl2 flow ratio and the temperature can be adjusted in order to increase the selectivity of the silicon nitride etch versus silicon dioxide, eventually to infinite, such that the silicon dioxide is untouched by the etch. Further details are provided in Suto et al, “Highly selective etching of Si3N4 to SiO2 employing fluorine and chlorine atoms generated by microwave discharge”, J. ELECTROCHEMICAL SOCIETY, Vol. 136,No 7, Jul. 1989, p. 2032-2034; and Staffa et al, “Selective remote plasma etching of Si3N4 over SiO2 at elevated temperature”, ELECTROCHEMICAL SOCIETY PROCEEDINGS, Vol. 95-5, p. 283-289, the disclosures of which are incorporated herein by reference. High etch rates of silicon, silicon oxide and Si3N4 can be achieved. - It will be understood by those of skill in the art that numerous and various modifications can be made without departing from the spirit of the present invention. Therefore, it should be clearly understood that the forms of the present invention are illustrative only and are not intended to limit the scope of the present invention.
Claims (44)
1. A chemical vapor deposition (CVD) device comprising
a deposition reaction chamber;
a plasma discharge chamber that is provided remotely from the reaction chamber; and
a piping that links the reaction chamber and the remote plasma discharge chamber,
wherein energy coupled to the remote plasma discharge chamber activates cleaning gas within the plasma discharge chamber, and the activated cleaning gas is brought into the inside of the reaction chamber through the piping and changes solid substances adhered to the inside of the reaction chamber as a consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber,
wherein internal surfaces of the piping comprises a metal not corroded by the activated cleaning gas species.
2. The CVD device according to claim 1 , wherein the activated cleaning gas comprises fluorine active species.
3. The CVD device of claim 2 , wherein the internal surface of the piping comprises a fluorine-passivated metal.
4. The CVD device of claim 3 , wherein of the piping is made of a metal selected from the group consisting of fluorine-passivated stainless steel, aluminum, and aluminum alloy.
5. The CVD device of claim 1 , wherein the piping comprises a through-flow type valve positioned between the remote plasma discharge chamber and the reaction chamber.
6. The CVD device of claim 5 , wherein the activated cleaning gas comprises fluorine active species and an inner surface of the valve is made of fluorine-passivated aluminum.
7. The CVD device of claim 5 , wherein the valve has an opening that, when fully open, defines a pressure drop across the valve of less than about 0.25 Torr.
8. The CVD device of claim 7 , wherein the pressure drop across the valve when fully open is less than about 0.1 Torr.
9. The CVD device of claim 7 , wherein the opening of the valve is sized, when fully opened, substantially equal in width to an inner surface of the piping, and the valve does not have projections, when fully opened, with respect to the inner surface of the piping.
10. The CVD device of claim 5 , wherein the piping and the valve are heated to a temperature effective to prevent deposition of the cleaning gas.
11. The CVD of claim 1 , further comprising a support provided within the reaction chamber, configured to support an object to be processed, and a gas-emitting plate provided at a position facing the support within the reaction chamber in order to supply reaction gas to the object to be processed to form a film on the object to be processed, wherein the activated cleaning gas is supplied through piping into the reaction chamber from holes provided on the gas-emitting plate.
12. The CVD device of claim 11 , wherein the gas-emitting plate is connected to a source of power to form an in situ plasma electrode for plasma CVD within the reaction chamber.
13. The CVD device of claim 11 , further comprising a gas conduit communicating with a source of reaction gas, wherein one end of the gas conduit is linked to the piping at a predetermined position between the valve and the gas-emitting plate.
14. The CVD device of claim 1 , wherein the piping is straight between the remote plasma discharge chamber and the reaction chamber.
15. The CVD device of claim 1 , wherein the energy activating the cleaning gas has a frequency between about 300 kHz and 500 kHz.
16. The CVD device of claim 14 , wherein the energy activating the cleaning gas has a power between about 1,500 W and 3,000 W.
17. The CVD device of claim 1 , further comprising a reaction gas inlet and a reaction gas outlet defining a horizontal flow across a substrate surface upon which material is deposited within the reaction chamber.
18. The CVD device of claim 17 , wherein the piping opens into the reaction chamber downstream of the inlet and upstream of a substrate support configured for supporting a substrate within the chamber.
19. The CVD device of claim 17 , wherein the reaction chamber comprises quartz walls and radiant heating elements.
20. A plasma chemical vapor deposition (CVD) reactor, comprising a reaction chamber, a remote plasma discharge chamber connected to the reaction chamber by piping, a source of cleaning gas in fluid communication with the piping upstream of the remote plasma discharge chamber, and a power source communicating energy with a frequency between about 300 kHz and 500 kHz to activate the cleaning gas within the remote plasma discharge chamber.
21. The plasma CVD reactor of claim 20 , wherein the remote plasma discharge chamber is formed of metal.
22. The plasma CVD reactor of claim 21 , wherein the remote plasma discharge chamber comprises anodized aluminum.
23. The plasma CVD reactor of claim 20 , wherein the cleaning gas comprises a fluorine containing gas, and the piping supplies fluorine active species to the reaction chamber.
24. The plasma CVD reactor of claim 23 , wherein the piping comprises internal surfaces formed of fluorine-passivated metal resistant to corrosion by fluorine active species.
25. The plasma CVD device of claim 23 , wherein the piping is heated to between about 100° C. and 200° C.
26. The plasma CVD reactor of claim 20 , further comprising a source of CVD reaction gas in fluid communication with the remote plasma discharge chamber.
27. The plasma CVD reactor of claim 20 , further comprising a through-flow type valve on the piping between the remote plasma discharge chamber and the reaction chamber, the valve being configured such that, when fully opened, it defines an opening substantially equal in width to an inner surface of the piping, and the valve does not have projections, when fully opened, with respect to the inner surface of the piping.
28. The plasma CVD reactor of claim 27 , wherein a pressure drop is formed across the valve when fully opened and plasma is ignited within the remote plasma discharge chamber, the pressure drop being less than 1% of a pressure at an inlet to the chamber.
29. The plasma CVD reactor of claim 20 , wherein the cleaning gas comprises a fluorine-containing gas and the power source communicates energy with a power between about 1,000 W and 5,000 W to produce fluorine active species within the remote plasma discharge chamber.
30. The plasma CVD reactor of claim 29 , wherein the power source communicates energy with a power between about 2,000 W and 3,000 W to produce fluorine active species within the remote plasma discharge chamber.
31. The plasma CVD reactor of claim 20 , configured to maintain pressure within the reaction chamber between about 1 Torr and 8 Torr.
32. The plasma CVD reactor of claim 20 , capable of removing silicon nitride deposits from surfaces of the reaction chamber at a rate of greater than or equal to about 2.0 microns/minute when the power source communicates energy with a power of less than about 3,000 W.
33. A plasma chemical vapor deposition (CVD) device comprising:
a reaction chamber having walls;
a remote plasma discharge chamber connected to the reaction chamber by piping;
at least one gas source connected to the remote plasma discharge chamber by piping; and
a power source, connected to the remote plasma discharge chamber, that applies power to the remote plasma discharge chamber of between about 500 W and 3,000 W,
wherein the device is capable of removing silicon nitride deposits adhered to the walls of the reaction chamber at a rate of greater than or equal to about 2.0 microns/minute when the power source communicates energy with a power of less than about 3,000 W.
34. The CVD device of claim 33 , wherein the walls of the reaction chamber comprise quartz.
35. The CVD device of claim 33 , wherein the remote plasma discharge chamber is formed of metal.
36. The CVD device of claim 33 , wherein the at least one gas source comprises a plurality of gas sources.
37. The CVD device of claim 36 , wherein at least one of the plurality of gas sources comprises a source of CVD reaction gas connected to the remote plasma discharge chamber.
38. The CVD device of claim 36 , wherein at least one of the plurality of gas sources comprises a source of a cleaning gas containing fluorine.
39. The CVD device of claim 38 , wherein the piping comprises internal surfaces formed of metal resistant to corrosion by an active species of the cleaning gas.
40. The CVD device of claim 39 , wherein the internal surfaces are formed of fluorine-passivated metal resistant to corrosion by fluorine active species
41. A self-cleaning chemical vapor deposition (CVD) reactor, comprising a reaction chamber, a remote plasma discharge chamber connected to the reaction chamber by piping, a gaseous source of fluorine in fluid communication with the piping upstream of the remote plasma discharge chamber, the piping comprises a through-flow type valve positioned between the remote plasma discharge chamber and the reaction chamber, and a power source communicating energy with a frequency between about 300 kHz and 500 kHz to activate fluorine within the remote plasma discharge chamber.
42. The CVD reactor of claim 41 , wherein a pressure drop is formed across the valve when fully opened and plasma is ignited within the remote plasma discharge chamber, the pressure drop being less than about 5% of a pressure at an inlet to the chamber.
43. The CVD reactor of claim 42 , wherein the pressure drop is less than about 1% of the pressure at the inlet.
44. The CVD reactor of claim 42 , wherein an internal surface of the piping comprises a fluorine-passivated metal.
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US20040071878A1 (en) * | 2002-08-15 | 2004-04-15 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Surface preparation using plasma for ALD Films |
WO2004020694A1 (en) * | 2002-08-30 | 2004-03-11 | Tokyo Electron Limited | Substrate processor and method of cleaning the same |
US6767836B2 (en) | 2002-09-04 | 2004-07-27 | Asm Japan K.K. | Method of cleaning a CVD reaction chamber using an active oxygen species |
RU2215061C1 (en) * | 2002-09-30 | 2003-10-27 | Институт прикладной физики РАН | High-speed method for depositing diamond films from gas phase in plasma of shf-discharge and plasma reactor for performing the same |
US7806126B1 (en) * | 2002-09-30 | 2010-10-05 | Lam Research Corporation | Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same |
US6818566B2 (en) * | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
US20040134427A1 (en) * | 2003-01-09 | 2004-07-15 | Derderian Garo J. | Deposition chamber surface enhancement and resulting deposition chambers |
US20040135828A1 (en) * | 2003-01-15 | 2004-07-15 | Schmitt Stephen E. | Printer and method for printing an item with a high durability and/or resolution image |
US6923189B2 (en) | 2003-01-16 | 2005-08-02 | Applied Materials, Inc. | Cleaning of CVD chambers using remote source with cxfyoz based chemistry |
JP2005033173A (en) * | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | Method for manufacturing semiconductor integrated circuit device |
US9725805B2 (en) * | 2003-06-27 | 2017-08-08 | Spts Technologies Limited | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
US7105431B2 (en) * | 2003-08-22 | 2006-09-12 | Micron Technology, Inc. | Masking methods |
US7371688B2 (en) * | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
US7354631B2 (en) * | 2003-11-06 | 2008-04-08 | Micron Technology, Inc. | Chemical vapor deposition apparatus and methods |
US7205205B2 (en) * | 2003-11-12 | 2007-04-17 | Applied Materials | Ramp temperature techniques for improved mean wafer before clean |
US20050120958A1 (en) * | 2003-12-07 | 2005-06-09 | Frank Lin | Reactor |
US20050136684A1 (en) * | 2003-12-23 | 2005-06-23 | Applied Materials, Inc. | Gap-fill techniques |
JP4312063B2 (en) | 2004-01-21 | 2009-08-12 | 日本エー・エス・エム株式会社 | Thin film manufacturing apparatus and method |
CN100477107C (en) * | 2004-01-28 | 2009-04-08 | 东京毅力科创株式会社 | Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus and method for processing substrate |
US20050178333A1 (en) * | 2004-02-18 | 2005-08-18 | Asm Japan K.K. | System and method of CVD chamber cleaning |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US7780793B2 (en) * | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
US20050221020A1 (en) * | 2004-03-30 | 2005-10-06 | Tokyo Electron Limited | Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film |
US20050221618A1 (en) * | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
US20050223986A1 (en) * | 2004-04-12 | 2005-10-13 | Choi Soo Y | Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition |
US20050227502A1 (en) * | 2004-04-12 | 2005-10-13 | Applied Materials, Inc. | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity |
KR100580584B1 (en) * | 2004-05-21 | 2006-05-16 | 삼성전자주식회사 | Method for cleaning a surface of a remote plasma generating tube and method and apparatus for processing a substrate using the same |
GB0415560D0 (en) * | 2004-07-12 | 2004-08-11 | Boc Group Plc | Pump cleaning |
US20060042754A1 (en) * | 2004-07-30 | 2006-03-02 | Tokyo Electron Limited | Plasma etching apparatus |
JP2006128370A (en) * | 2004-10-28 | 2006-05-18 | Tokyo Electron Ltd | Film forming apparatus and metod, program, and recording medium |
JP2006128485A (en) * | 2004-10-29 | 2006-05-18 | Asm Japan Kk | Semiconductor processing apparatus |
US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
US7926440B1 (en) * | 2004-11-27 | 2011-04-19 | Etamota Corporation | Nanostructure synthesis apparatus and method |
US20060130971A1 (en) * | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
JP4651406B2 (en) * | 2005-02-16 | 2011-03-16 | キヤノンアネルバ株式会社 | Surface treatment method using plasma gas decomposition apparatus |
US7534469B2 (en) * | 2005-03-31 | 2009-05-19 | Asm Japan K.K. | Semiconductor-processing apparatus provided with self-cleaning device |
KR100725721B1 (en) | 2005-05-10 | 2007-06-08 | 피에스케이 주식회사 | Method for treating plasma with down stream type |
US20060266288A1 (en) * | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
KR100706792B1 (en) * | 2005-08-01 | 2007-04-12 | 삼성전자주식회사 | Apparatus for manufacturing semiconductor device with a pump unit and method for cleaning the pump unit |
WO2007016631A1 (en) * | 2005-08-02 | 2007-02-08 | Massachusetts Institute Of Technology | Method of using nf3 for removing surface deposits |
KR20080050403A (en) * | 2005-08-02 | 2008-06-05 | 매사추세츠 인스티튜트 오브 테크놀로지 | Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber |
US20090047447A1 (en) * | 2005-08-02 | 2009-02-19 | Sawin Herbert H | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor |
KR100724266B1 (en) * | 2005-09-26 | 2007-05-31 | 동부일렉트로닉스 주식회사 | Silicon wafer surface cleaning methode using atmospheric pressure plasma and its apparatus |
US20080083701A1 (en) * | 2006-10-04 | 2008-04-10 | Mks Instruments, Inc. | Oxygen conditioning of plasma vessels |
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
DE102006051550B4 (en) * | 2006-10-30 | 2012-02-02 | Fhr Anlagenbau Gmbh | Method and device for structuring components using a material based on silicon oxide |
JP2008218877A (en) * | 2007-03-07 | 2008-09-18 | Hitachi Kokusai Electric Inc | Substrate treatment device and method of manufacturing semiconductor device |
KR100870567B1 (en) * | 2007-06-27 | 2008-11-27 | 삼성전자주식회사 | A method of plasma ion doping process and an apparatus thereof |
JP2010536170A (en) * | 2007-08-08 | 2010-11-25 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | Semiconductor structure and manufacturing method |
US7745350B2 (en) * | 2007-09-07 | 2010-06-29 | Applied Materials, Inc. | Impurity control in HDP-CVD DEP/ETCH/DEP processes |
JP2009084625A (en) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | Raw material gas supply system and film deposition apparatus |
US20090090382A1 (en) * | 2007-10-05 | 2009-04-09 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US20090155488A1 (en) * | 2007-12-18 | 2009-06-18 | Asm Japan K.K. | Shower plate electrode for plasma cvd reactor |
JP4696135B2 (en) * | 2008-02-04 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | Gate valve and deposition system |
US8262800B1 (en) * | 2008-02-12 | 2012-09-11 | Novellus Systems, Inc. | Methods and apparatus for cleaning deposition reactors |
US7993462B2 (en) | 2008-03-19 | 2011-08-09 | Asm Japan K.K. | Substrate-supporting device having continuous concavity |
US20090246399A1 (en) * | 2008-03-28 | 2009-10-01 | Asm Japan K.K. | Method for activating reactive oxygen species for cleaning carbon-based film deposition |
US20090297731A1 (en) * | 2008-05-30 | 2009-12-03 | Asm Japan K.K. | Apparatus and method for improving production throughput in cvd chamber |
GB0813241D0 (en) | 2008-07-18 | 2008-08-27 | Mcp Tooling Technologies Ltd | Manufacturing apparatus and method |
KR101037916B1 (en) * | 2008-07-18 | 2011-05-30 | 최영이 | Uniting structure of fixing frame for glass door |
US7972961B2 (en) * | 2008-10-09 | 2011-07-05 | Asm Japan K.K. | Purge step-controlled sequence of processing semiconductor wafers |
US8133555B2 (en) * | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
JP2010098158A (en) * | 2008-10-17 | 2010-04-30 | Seiko Epson Corp | Susceptor for plasma cvd device and method of manufacturing the same, plasma cvd device and maintenance method for the plasma cvd device, and method of manufacturing semiconductor device |
CN102197458A (en) * | 2008-10-24 | 2011-09-21 | 应用材料公司 | Multiple gas feed apparatus and method |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US8216380B2 (en) * | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
US8287648B2 (en) | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US8910590B2 (en) * | 2009-02-13 | 2014-12-16 | Gallium Enterprises Pty Ltd. | Plasma deposition |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
WO2011017222A2 (en) * | 2009-08-04 | 2011-02-10 | Applied Materials, Inc. | Method and apparatus for dry cleaning a cooled showerhead |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
FR2949237B1 (en) * | 2009-08-24 | 2011-09-30 | Ecole Polytech | METHOD OF CLEANING THE SURFACE OF A SILICON SUBSTRATE |
JP2011096937A (en) * | 2009-10-30 | 2011-05-12 | Ulvac Japan Ltd | Method of cleaning vacuum excitation tube, and vacuum processing apparatus |
US8338317B2 (en) * | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
US8319176B2 (en) | 2010-04-01 | 2012-11-27 | Electro Scientific Industries, Inc. | Sample chamber for laser ablation inductively coupled plasma mass spectroscopy |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
GB2480873B (en) * | 2010-06-04 | 2014-06-11 | Plastic Logic Ltd | Reducing defects in electronic apparatus |
JP2012015374A (en) * | 2010-07-01 | 2012-01-19 | Toshiba Corp | Mass flow controller system, plasma processing apparatus, flow rate control method, and method of manufacturing semiconductor device |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) * | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
JP5710433B2 (en) * | 2011-09-13 | 2015-04-30 | 株式会社東芝 | Film forming apparatus cleaning method and film forming apparatus |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US20140069459A1 (en) * | 2012-09-09 | 2014-03-13 | Novellus Systems, Inc. | Methods and apparatus for cleaning deposition chambers |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9142393B2 (en) | 2013-05-23 | 2015-09-22 | Asm Ip Holding B.V. | Method for cleaning reaction chamber using pre-cleaning process |
US10672591B2 (en) * | 2013-06-21 | 2020-06-02 | Applied Materials, Inc. | Apparatus for removing particles from a twin chamber processing system |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
KR101493606B1 (en) * | 2013-08-27 | 2015-02-13 | 김정대 | Cleaning device using clean gas |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US20150361547A1 (en) * | 2014-06-13 | 2015-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for cleaning chemical vapor deposition chamber |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9355862B2 (en) | 2014-09-24 | 2016-05-31 | Applied Materials, Inc. | Fluorine-based hardmask removal |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
KR102300403B1 (en) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing thin film |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
KR101637099B1 (en) * | 2014-12-02 | 2016-07-07 | 천인관 | A coating apparatus comprising a cleanable chamber |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
KR102375158B1 (en) * | 2014-12-26 | 2022-03-17 | 삼성디스플레이 주식회사 | Deposition device and method of driving the same |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
WO2016157312A1 (en) * | 2015-03-27 | 2016-10-06 | 堺ディスプレイプロダクト株式会社 | Film forming device and method for cleaning film forming device |
EP3095893A1 (en) * | 2015-05-22 | 2016-11-23 | Solvay SA | A process for etching and chamber cleaning and a gas therefor |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
JP2017028012A (en) * | 2015-07-17 | 2017-02-02 | ラピスセミコンダクタ株式会社 | Semiconductor manufacturing device and semiconductor manufacturing method |
US9751114B2 (en) * | 2015-07-23 | 2017-09-05 | Renmatix, Inc. | Method and apparatus for removing a fouling substance from a pressured vessel |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
CN104962880B (en) | 2015-07-31 | 2017-12-01 | 合肥京东方光电科技有限公司 | A kind of vapor deposition apparatus |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR102096577B1 (en) | 2016-12-29 | 2020-04-02 | 한화솔루션 주식회사 | polysilicon manufacturing reactor |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US20180230597A1 (en) * | 2017-02-14 | 2018-08-16 | Applied Materials, Inc. | Method and apparatus of remote plasmas flowable cvd chamber |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
CN108878241B (en) * | 2017-05-10 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Semiconductor device and method for cleaning reaction chamber of semiconductor device |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111316417B (en) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | Storage device for storing wafer cassettes for use with batch ovens |
JP7206265B2 (en) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | Equipment with a clean mini-environment |
CN109868458B (en) * | 2017-12-05 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Cleaning system and cleaning method for semiconductor equipment |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
CN111630203A (en) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | Method for depositing gap filling layer by plasma auxiliary deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
TWI716818B (en) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | Systems and methods to form airgaps |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
WO2019199648A1 (en) * | 2018-04-10 | 2019-10-17 | Applied Materials, Inc. | Microwave plasma source with split window |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
KR20190128558A (en) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TW202349473A (en) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
CN112292478A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US11557460B2 (en) * | 2018-07-09 | 2023-01-17 | Lam Research Corporation | Radio frequency (RF) signal source supplying RF plasma generator and remote plasma generator |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
WO2020086173A2 (en) * | 2018-09-26 | 2020-04-30 | Applied Materials, Inc. | Heat conductive spacer for plasma processing chamber |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
JP7190915B2 (en) * | 2019-01-18 | 2022-12-16 | 東京エレクトロン株式会社 | Substrate processing apparatus cleaning method and substrate processing apparatus |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
KR102100770B1 (en) * | 2019-01-30 | 2020-04-14 | 김경민 | Valve apparatus, equipment for treating substrate having the same and processing method |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR102229688B1 (en) * | 2019-02-13 | 2021-03-18 | 프리시스 주식회사 | Valve Module and Substrate Processing apparatus having the same |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202121506A (en) | 2019-07-19 | 2021-06-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
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US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
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TW202115273A (en) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
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US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210078405A (en) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
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US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
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KR102470479B1 (en) | 2021-01-22 | 2022-11-25 | 김경민 | Valve apparatus and operating method thereof |
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WO2023229953A1 (en) * | 2022-05-23 | 2023-11-30 | Lam Research Corporation | In situ treatment of molybdenum oxyhalide byproducts in semiconductor processing equipment |
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CN116251803B (en) * | 2023-04-12 | 2023-09-22 | 东莞市晟鼎精密仪器有限公司 | Graphite boat cleaning equipment for cleaning silicon nitride coating based on microwave plasma dry method |
Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3656707A (en) * | 1970-04-16 | 1972-04-18 | Marotta Scientific Controls | Poppet valve assembly with straight-through flow |
US3696831A (en) * | 1971-11-11 | 1972-10-10 | John H Fowler | Valve |
US3963214A (en) * | 1974-11-26 | 1976-06-15 | Mueller Co. | Resilient seated gate valve with split body |
US4029289A (en) * | 1973-12-11 | 1977-06-14 | Institute Francais Du Petrole, Des Carburants Et Lubrifiants Et Entreprise De Recherches Et D'activities Elf | Control system for gate-valves |
US4162058A (en) * | 1977-05-19 | 1979-07-24 | Mueller Co. | Resilient seated gate valve with improved seat arrangement |
US4281819A (en) * | 1978-03-23 | 1981-08-04 | Linder Morris B | Balanced stem gate valve |
US4563367A (en) * | 1984-05-29 | 1986-01-07 | Applied Materials, Inc. | Apparatus and method for high rate deposition and etching |
US4682757A (en) * | 1986-07-18 | 1987-07-28 | Joy Manufacturing Company | Secondary backseat for gate valve |
US4859303A (en) * | 1987-10-09 | 1989-08-22 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
US5069938A (en) * | 1990-06-07 | 1991-12-03 | Applied Materials, Inc. | Method of forming a corrosion-resistant protective coating on aluminum substrate |
US5520142A (en) * | 1994-03-28 | 1996-05-28 | Tokyo Electron Kabushiki Kaisha | Decompression container |
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US5690743A (en) * | 1994-06-29 | 1997-11-25 | Tokyo Electron Limited | Liquid material supply apparatus and method |
US5769950A (en) * | 1985-07-23 | 1998-06-23 | Canon Kabushiki Kaisha | Device for forming deposited film |
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US5788799A (en) * | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US5807614A (en) * | 1993-12-15 | 1998-09-15 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and device for forming an excited gaseous atmosphere lacking electrically charged species used for treating nonmetallic substrates |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5844195A (en) * | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5908046A (en) * | 1997-03-12 | 1999-06-01 | Erc Industries, Inc. | Back seat rising stem gate valve |
US5939831A (en) * | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
US6033479A (en) * | 1998-04-22 | 2000-03-07 | Applied Materials, Inc. | Process gas delivery system for CVD having a cleaning subsystem |
US6079426A (en) * | 1997-07-02 | 2000-06-27 | Applied Materials, Inc. | Method and apparatus for determining the endpoint in a plasma cleaning process |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
US6143084A (en) * | 1998-03-19 | 2000-11-07 | Applied Materials, Inc. | Apparatus and method for generating plasma |
US6159298A (en) * | 1997-12-27 | 2000-12-12 | Tokyo Electron Limited | Thermal processing system |
US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6215806B1 (en) * | 1996-03-07 | 2001-04-10 | Canon Kabushiki Kaisha | Excimer laser generator provided with a laser chamber with a fluoride passivated inner surface |
US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
US20020033183A1 (en) * | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
US6706141B1 (en) * | 1998-10-16 | 2004-03-16 | R3T Rapid Reactive Radicals Technology | Device to generate excited/ionized particles in a plasma |
US6749717B1 (en) * | 1997-02-04 | 2004-06-15 | Micron Technology, Inc. | Device for in-situ cleaning of an inductively-coupled plasma chambers |
US20050139578A1 (en) * | 2000-02-24 | 2005-06-30 | Asm Japan K.K. | Thin-film forming apparatus having an automatic cleaning function for cleaning the inside |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
EP0460700B1 (en) * | 1990-06-07 | 1997-04-16 | Applied Materials, Inc. | Corrosion-resistant protective coating on aluminum substrate or surface and method of forming same |
US5443686A (en) | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
FI111329B (en) * | 1996-06-17 | 2003-07-15 | Antti Lillbacka | A method for tightening a floss, a clamping device and a floss |
US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US6039834A (en) * | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US6150628A (en) * | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6033992A (en) * | 1997-08-19 | 2000-03-07 | Micron Technology, Inc. | Method for etching metals using organohalide compounds |
US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6374831B1 (en) * | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
US6450116B1 (en) * | 1999-04-22 | 2002-09-17 | Applied Materials, Inc. | Apparatus for exposing a substrate to plasma radicals |
US6358327B1 (en) * | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
KR100767762B1 (en) * | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | A CVD semiconductor-processing device provided with a remote plasma source for self cleaning |
-
2001
- 2001-01-17 KR KR1020010002690A patent/KR100767762B1/en active IP Right Grant
- 2001-01-18 EP EP01300413A patent/EP1118692A1/en not_active Withdrawn
- 2001-01-18 US US09/764,523 patent/US6736147B2/en not_active Expired - Lifetime
- 2001-01-18 JP JP2001010115A patent/JP3902408B2/en not_active Expired - Lifetime
-
2004
- 2004-01-16 US US10/759,925 patent/US20040144400A1/en not_active Abandoned
- 2004-01-16 US US10/759,953 patent/US20040144489A1/en not_active Abandoned
-
2006
- 2006-11-06 JP JP2006300670A patent/JP4417362B2/en not_active Expired - Lifetime
-
2007
- 2007-06-05 US US11/758,601 patent/US20070227554A1/en not_active Abandoned
Patent Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3656707A (en) * | 1970-04-16 | 1972-04-18 | Marotta Scientific Controls | Poppet valve assembly with straight-through flow |
US3696831A (en) * | 1971-11-11 | 1972-10-10 | John H Fowler | Valve |
US4029289A (en) * | 1973-12-11 | 1977-06-14 | Institute Francais Du Petrole, Des Carburants Et Lubrifiants Et Entreprise De Recherches Et D'activities Elf | Control system for gate-valves |
US3963214A (en) * | 1974-11-26 | 1976-06-15 | Mueller Co. | Resilient seated gate valve with split body |
US4162058A (en) * | 1977-05-19 | 1979-07-24 | Mueller Co. | Resilient seated gate valve with improved seat arrangement |
US4281819A (en) * | 1978-03-23 | 1981-08-04 | Linder Morris B | Balanced stem gate valve |
US4563367A (en) * | 1984-05-29 | 1986-01-07 | Applied Materials, Inc. | Apparatus and method for high rate deposition and etching |
US5769950A (en) * | 1985-07-23 | 1998-06-23 | Canon Kabushiki Kaisha | Device for forming deposited film |
US4682757A (en) * | 1986-07-18 | 1987-07-28 | Joy Manufacturing Company | Secondary backseat for gate valve |
US4859303A (en) * | 1987-10-09 | 1989-08-22 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
US5069938A (en) * | 1990-06-07 | 1991-12-03 | Applied Materials, Inc. | Method of forming a corrosion-resistant protective coating on aluminum substrate |
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US5807614A (en) * | 1993-12-15 | 1998-09-15 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and device for forming an excited gaseous atmosphere lacking electrically charged species used for treating nonmetallic substrates |
US5520142A (en) * | 1994-03-28 | 1996-05-28 | Tokyo Electron Kabushiki Kaisha | Decompression container |
US5690743A (en) * | 1994-06-29 | 1997-11-25 | Tokyo Electron Limited | Liquid material supply apparatus and method |
US6126994A (en) * | 1994-06-29 | 2000-10-03 | Tokyo Electron Limited | Liquid material supply apparatus and method |
US6215806B1 (en) * | 1996-03-07 | 2001-04-10 | Canon Kabushiki Kaisha | Excimer laser generator provided with a laser chamber with a fluoride passivated inner surface |
US5788799A (en) * | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US5939831A (en) * | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5844195A (en) * | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US6749717B1 (en) * | 1997-02-04 | 2004-06-15 | Micron Technology, Inc. | Device for in-situ cleaning of an inductively-coupled plasma chambers |
US5908046A (en) * | 1997-03-12 | 1999-06-01 | Erc Industries, Inc. | Back seat rising stem gate valve |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
US6079426A (en) * | 1997-07-02 | 2000-06-27 | Applied Materials, Inc. | Method and apparatus for determining the endpoint in a plasma cleaning process |
US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
US6159298A (en) * | 1997-12-27 | 2000-12-12 | Tokyo Electron Limited | Thermal processing system |
US6143084A (en) * | 1998-03-19 | 2000-11-07 | Applied Materials, Inc. | Apparatus and method for generating plasma |
US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6033479A (en) * | 1998-04-22 | 2000-03-07 | Applied Materials, Inc. | Process gas delivery system for CVD having a cleaning subsystem |
US6706141B1 (en) * | 1998-10-16 | 2004-03-16 | R3T Rapid Reactive Radicals Technology | Device to generate excited/ionized particles in a plasma |
US20020033183A1 (en) * | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
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Also Published As
Publication number | Publication date |
---|---|
JP4417362B2 (en) | 2010-02-17 |
JP3902408B2 (en) | 2007-04-04 |
EP1118692A1 (en) | 2001-07-25 |
JP2001274105A (en) | 2001-10-05 |
US20040144400A1 (en) | 2004-07-29 |
US20070227554A1 (en) | 2007-10-04 |
KR20010076318A (en) | 2001-08-11 |
US6736147B2 (en) | 2004-05-18 |
US20020011210A1 (en) | 2002-01-31 |
JP2007043205A (en) | 2007-02-15 |
KR100767762B1 (en) | 2007-10-17 |
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