US20040102022A1 - Methods of fabricating integrated circuitry - Google Patents

Methods of fabricating integrated circuitry Download PDF

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Publication number
US20040102022A1
US20040102022A1 US10/302,328 US30232802A US2004102022A1 US 20040102022 A1 US20040102022 A1 US 20040102022A1 US 30232802 A US30232802 A US 30232802A US 2004102022 A1 US2004102022 A1 US 2004102022A1
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passivation layer
forming
silicone material
bond pads
over
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US10/302,328
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Tongbi Jiang
Mike Connell
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Micron Technology Inc
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Individual
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Priority to US10/302,328 priority Critical patent/US20040102022A1/en
Assigned to MICRON TECHNOLOGY, INC. reassignment MICRON TECHNOLOGY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CONNELL, MIKE, JIANG, TONGBI
Publication of US20040102022A1 publication Critical patent/US20040102022A1/en
Priority to US11/243,925 priority patent/US8461685B2/en
Priority to US11/246,755 priority patent/US7078267B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This invention relates to methods of fabricating integrated circuitry.
  • Integrated circuitry fabrication typically fabricates multiple discrete integrated circuits or chips over a single substrate.
  • a typical substrate utilized today is a monocrystalline silicon wafer within and upon which integrated circuitry is fabricated. Regardless, at the completion of fabrication, the substrate is cut or otherwise processed to singulate the die into individual integrated circuitry chips/die.
  • the individual chips/die are mounted and electrically connected with larger circuit boards, lead frames or other substrates which connect or otherwise become a part of some form of larger operable hardware.
  • the individual die as connected/mounted to another substrate are encapsulated in epoxy resin mold materials for fixating and protecting the mounted chip.
  • the epoxy mold compounds have a much higher thermal coefficient of expansion than that of the typical silicon die and even other substrate materials to which the die are mounted. These differences in thermal coefficients of expansion can result in considerable internal stresses in the ultimately encapsulated device, in some cases leading to circuitry failure.
  • One manner of overcoming the stress caused by differences in thermal coefficients of expansion includes silicon dioxide filler materials within the mold compound.
  • the intent and effect is to modify the thermal coefficient of expansion of the pure molding material to better approximate that of the die and other substrate materials.
  • the hard silicon dioxide particles can create their own problems. Specifically, upon application and cure of the molding material, the silicon dioxide particles can penetrate into the outer passivation layers fabricated on the chip. This can result in the cracking of those layers as well as the material of the integrated circuitry underlying the passivation layers and lead to failure.
  • the invention includes methods of fabricating integrated circuitry.
  • a substrate comprising a plurality of integrated circuitry die is provided.
  • the individual die have bond pads.
  • a passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate.
  • a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate.
  • FIG. 1 is a diagrammatic top view of an exemplary substrate at a processing step in accordance with an aspect of the invention.
  • FIG. 2 is a diagrammatic sectional view taken through line 2 - 2 in FIG. 1.
  • FIG. 3 is a view of the FIG. 2 substrate at a processing step subsequent to that shown by FIG. 2.
  • FIG. 4 is a view of the FIG. 3 substrate at a processing step subsequent to that shown by FIG. 3.
  • FIG. 5 is a view of the FIG. 4 substrate at a processing step subsequent to that shown by FIG. 4.
  • FIG. 6 is a view of the FIG. 5 substrate at a processing step subsequent to that shown by FIG. 5.
  • FIG. 7 is a view of the FIG. 6 substrate at a processing step subsequent to that shown by FIG. 6.
  • FIG. 8 is a view of the FIG. 7 substrate at a processing step subsequent to that shown by FIG. 7.
  • FIG. 9 is an alternate embodiment of the FIG. 5 substrate at a processing stop subsequent to that depicted by FIG. 5.
  • FIG. 10 is a view of the FIG. 9 substrate at a processing step subsequent to that shown by FIG. 9.
  • FIG. 11 is an alternate embodiment of the FIG. 4 substrate at a processing stop subsequent to that depicted by FIG. 4.
  • FIG. 12 is a view of the FIG. 11 substrate at a processing step subsequent to that shown by FIG. 11.
  • FIG. 13 is a view of the FIG. 12 substrate at a processing step subsequent to that shown by FIG. 12.
  • FIG. 14 is a view of the FIG. 8 substrate at a processing step subsequent to that shown by FIG. 8.
  • FIG. 15 is a view of the FIG. 14 substrate at a processing step subsequent to that shown by FIG. 14.
  • FIGS. 1 - 12 a substrate in the form of a semiconductor wafer is indicated generally with reference numeral 10 .
  • semiconductor substrate or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials).
  • substrate refers to any supporting structure, including, but not limited to, the semiconductive substrates described above.
  • Substrate 10 has been processed to include a plurality of integrated circuitry die 12 . Such have been fabricated to include a plurality of bond pads 14 which will be utilized ultimately in electrically connecting the integrated circuitry of the die with external components.
  • first passivation layer 16 is formed over substrate 10 and in contact with bond pads 14 .
  • An exemplary preferred material is undoped silicon dioxide, for example deposited by decomposition of tetraethylorthosilicate (TEOS).
  • TEOS tetraethylorthosilicate
  • first passivation layer 16 consists essentially of silicon dioxide.
  • a thickness range for layer 16 is from 5,000 Angstroms to 10,000 Angstroms.
  • another passivation layer 18 is formed over and on (meaning in contact with) first passivation layer 16 .
  • An exemplary material for layer 18 is silicon nitride, with layer 18 consisting essentially of silicon nitride in one preferred embodiment.
  • An exemplary preferred thickness range for layer 18 is from 0.2 micron to 5 microns.
  • a passivation layer 20 is formed over and on passivation layer 18 .
  • a preferred material is polyimide, with an exemplary preferred thickness range being from 1 micron to 10 microns.
  • a passivation layer 22 comprising one or more silicone materials is formed over and on passivation layer 20 .
  • Layer 22 is most preferably formed to have a Young's modulus of no greater than 9.0 GPa.
  • Exemplary preferred silicone materials include those available from Dow Corning of Auburn, Mich. for example the Dow Corning MXX-P family of silicones, with M300-P from such family being one specific example.
  • An exemplary such layer can act as a stress buffer and preclude silica or other particles within molding compounds or other materials from cracking layers and other material therebeneath.
  • a photoresist layer 24 has been formed over passivation layer 22 comprising silicone material.
  • a series of openings 26 have been formed therein over bond pads 14 .
  • openings 26 have been extended through passivation layers 22 , 20 , 18 and 16 to expose bond pads 14 .
  • Photoresist layer 24 would then be completely removed from the substrate.
  • An exemplary dry chemistry for etching through the silicone material and polyimide material would be 02 plasma. Such would also typically etch photoresist, which would warrant making the photoresist layer sufficiently thick to complete etching through the silicone material and the polyimide before the photoresist was etched completely away.
  • Silicon dioxide and silicon nitride can be etched using CF 4 and CHF 3 chemistries.
  • FIG. 9 illustrates an alternate embodiment processing with respect to a substrate 10 a .
  • a passivation layer 22 a comprising a silicone material is formed to be inherently photoimageable.
  • An example preferred photoimageable silicone material for passivation layer 22 a is the same M300-P material referred to above.
  • FIG. 9 depicts exemplary alternate processing to that depicted by FIG. 8, whereby passivation layer 22 a has been photopatterned, for example utilizing a mask, with suitable actinic energy effective to change the solubility in a solvent of selected regions of the passivation layer which are received over bond pads 14 .
  • FIG. 9 depicts such substrate as having been exposed to a suitable developing solvent effective to remove the selected regions from over the bond pads, thereby forming exemplary openings 26 therein/in place thereof. Accordingly, if desired, such processing can be essentially identical to that of FIG. 7, but void of any photoresist layer over passivation layer 22 a.
  • the removed selected regions of passivation layer 22 a have been etched through, utilizing layer 22 a as a mask, layers 20 , 18 and 16 to expose bond pads 14 . Again and preferably, such can be conducted without any use of photoresist over layer 22 a.
  • the orders of any of the above layers could be switched or otherwise modified, with the embodiment in the initially described order being but one preferred example.
  • the passivation layer comprising the silicone material might be fabricated to be other than the outermost layer.
  • the passivation layer comprising silicone material is formed such that it is not in contact with bond pads 14 , although such could be fabricated to be in contact with bond pads 14 .
  • FIG. 11 illustrates an alternate embodiment processing with respect to a substrate 10 b . Like numerals from the first described embodiments are utilized where appropriate, with differences being indicated with the suffix “b” or with different numerals.
  • FIG. 11 illustrates processing subsequent to that of FIG. 4 whereby openings 50 have been formed through layers 18 and 16 to bond pads 14 . Such could be by photolithographic and etch manners, or by any other means whether existing of yet-to-be-developed.
  • a polyimide comprising passivation layer 20 b is formed over passivation layers 16 and 18 to within openings 50 .
  • Silicone material comprising passivation layer 22 is formed thereover.
  • openings 26 are formed to bond pads 14 . Again, such could be by photolithographic and etch manners, or by any other means whether existing of yet-to-be-developed.
  • die 12 have been singulated from substrate 10 / 10 a / 10 b .
  • Such as singulated die comprise at least some outermost layer, i.e., layer 22 / 22 a , which predominately comprises the passivation layer having the silicone material.
  • the substrate might be fabricated such that the illustrated uppermost/outermost layer does not predominately comprise the passivation layer containing silicone material. Regardless if desired, such can be mounted or otherwise provided with respect to other substrates, and wire or other bond connections made through the illustrated openings to the bond pads.
  • an exemplary additional substrate 40 is shown bonded to die 12 using a resin 42 containing solid particles 44 .
  • a resin 42 containing solid particles 44 Such provides but one example of contacting the passivation layer comprising silicone material with a silica particle containing resin, in but one exemplary preferred embodiment.

Abstract

A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Description

    TECHNICAL FIELD
  • This invention relates to methods of fabricating integrated circuitry. [0001]
    • BACKGROUND OF THE INVENTION
  • Integrated circuitry fabrication typically fabricates multiple discrete integrated circuits or chips over a single substrate. A typical substrate utilized today is a monocrystalline silicon wafer within and upon which integrated circuitry is fabricated. Regardless, at the completion of fabrication, the substrate is cut or otherwise processed to singulate the die into individual integrated circuitry chips/die. Typically, the individual chips/die are mounted and electrically connected with larger circuit boards, lead frames or other substrates which connect or otherwise become a part of some form of larger operable hardware. [0002]
  • In many applications, the individual die as connected/mounted to another substrate are encapsulated in epoxy resin mold materials for fixating and protecting the mounted chip. Typically, the epoxy mold compounds have a much higher thermal coefficient of expansion than that of the typical silicon die and even other substrate materials to which the die are mounted. These differences in thermal coefficients of expansion can result in considerable internal stresses in the ultimately encapsulated device, in some cases leading to circuitry failure. [0003]
  • One manner of overcoming the stress caused by differences in thermal coefficients of expansion includes silicon dioxide filler materials within the mold compound. Typically, the intent and effect is to modify the thermal coefficient of expansion of the pure molding material to better approximate that of the die and other substrate materials. Unfortunately, the hard silicon dioxide particles can create their own problems. Specifically, upon application and cure of the molding material, the silicon dioxide particles can penetrate into the outer passivation layers fabricated on the chip. This can result in the cracking of those layers as well as the material of the integrated circuitry underlying the passivation layers and lead to failure. [0004]
  • While the invention was motivated in addressing the above issues and improving upon the above-described drawbacks, it is in no way so limited. The invention is only limited by the accompanying claims as literally worded (without interpretative or other limiting reference to the above background art description, remaining portions of the specification or the drawings) and in accordance with the doctrine of equivalents. [0005]
    • SUMMARY
  • The invention includes methods of fabricating integrated circuitry. In one implementation, a substrate comprising a plurality of integrated circuitry die is provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. [0006]
  • In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. [0007]
  • Other aspects and implementations are contemplated. [0008]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Preferred embodiments of the invention are described below with reference to the following accompanying drawings. [0009]
  • FIG. 1 is a diagrammatic top view of an exemplary substrate at a processing step in accordance with an aspect of the invention. [0010]
  • FIG. 2 is a diagrammatic sectional view taken through line [0011] 2-2 in FIG. 1.
  • FIG. 3 is a view of the FIG. 2 substrate at a processing step subsequent to that shown by FIG. 2. [0012]
  • FIG. 4 is a view of the FIG. 3 substrate at a processing step subsequent to that shown by FIG. 3. [0013]
  • FIG. 5 is a view of the FIG. 4 substrate at a processing step subsequent to that shown by FIG. 4. [0014]
  • FIG. 6 is a view of the FIG. 5 substrate at a processing step subsequent to that shown by FIG. 5. [0015]
  • FIG. 7 is a view of the FIG. 6 substrate at a processing step subsequent to that shown by FIG. 6. [0016]
  • FIG. 8 is a view of the FIG. 7 substrate at a processing step subsequent to that shown by FIG. 7. [0017]
  • FIG. 9 is an alternate embodiment of the FIG. 5 substrate at a processing stop subsequent to that depicted by FIG. 5. [0018]
  • FIG. 10 is a view of the FIG. 9 substrate at a processing step subsequent to that shown by FIG. 9. [0019]
  • FIG. 11 is an alternate embodiment of the FIG. 4 substrate at a processing stop subsequent to that depicted by FIG. 4. [0020]
  • FIG. 12 is a view of the FIG. 11 substrate at a processing step subsequent to that shown by FIG. 11. [0021]
  • FIG. 13 is a view of the FIG. 12 substrate at a processing step subsequent to that shown by FIG. 12. [0022]
  • FIG. 14 is a view of the FIG. 8 substrate at a processing step subsequent to that shown by FIG. 8. [0023]
  • FIG. 15 is a view of the FIG. 14 substrate at a processing step subsequent to that shown by FIG. 14. [0024]
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8). [0025]
  • In accordance with aspects of the invention, and by way of example only, preferred methodical embodiments are described with reference to FIGS. [0026] 1-12. The illustrated relationships between the various layers and die are exaggerated in the figures for clarity, and are only diagrammatic depictions thereof. Referring initially to FIGS. 1 and 2, a substrate in the form of a semiconductor wafer is indicated generally with reference numeral 10. In the context of this document, the term “semiconductor substrate” or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductive substrates described above. Substrate 10 has been processed to include a plurality of integrated circuitry die 12. Such have been fabricated to include a plurality of bond pads 14 which will be utilized ultimately in electrically connecting the integrated circuitry of the die with external components.
  • Referring to FIG. 3, an exemplary [0027] first passivation layer 16 is formed over substrate 10 and in contact with bond pads 14. An exemplary preferred material is undoped silicon dioxide, for example deposited by decomposition of tetraethylorthosilicate (TEOS). In one preferred embodiment, first passivation layer 16 consists essentially of silicon dioxide. By way of example only, a thickness range for layer 16 is from 5,000 Angstroms to 10,000 Angstroms.
  • Referring to FIG. 4, another [0028] passivation layer 18 is formed over and on (meaning in contact with) first passivation layer 16. An exemplary material for layer 18 is silicon nitride, with layer 18 consisting essentially of silicon nitride in one preferred embodiment. An exemplary preferred thickness range for layer 18 is from 0.2 micron to 5 microns.
  • Referring to FIG. 5, another [0029] passivation layer 20 is formed over and on passivation layer 18. A preferred material is polyimide, with an exemplary preferred thickness range being from 1 micron to 10 microns.
  • Referring to FIG. 6, a [0030] passivation layer 22 comprising one or more silicone materials is formed over and on passivation layer 20. Layer 22 is most preferably formed to have a Young's modulus of no greater than 9.0 GPa. Exemplary preferred silicone materials include those available from Dow Corning of Auburn, Mich. for example the Dow Corning MXX-P family of silicones, with M300-P from such family being one specific example. An exemplary such layer can act as a stress buffer and preclude silica or other particles within molding compounds or other materials from cracking layers and other material therebeneath.
  • Referring to FIG. 7, a [0031] photoresist layer 24 has been formed over passivation layer 22 comprising silicone material. A series of openings 26 have been formed therein over bond pads 14. Referring to FIG. 8, openings 26 have been extended through passivation layers 22, 20, 18 and 16 to expose bond pads 14. Photoresist layer 24 would then be completely removed from the substrate. An exemplary dry chemistry for etching through the silicone material and polyimide material would be 02 plasma. Such would also typically etch photoresist, which would warrant making the photoresist layer sufficiently thick to complete etching through the silicone material and the polyimide before the photoresist was etched completely away. Silicon dioxide and silicon nitride can be etched using CF4 and CHF3 chemistries.
  • Such provides but one example of forming openings through the [0032] passivation layer 22 comprising silicone material to the bond pads, with such method utilizing photolithography and etch employing a photoresist that is completely removed from the substrate prior to the singulating of the die from the substrate. FIG. 9 illustrates an alternate embodiment processing with respect to a substrate 10 a. Like numerals from the first described embodiment are utilized where appropriate, with differences being indicated with the suffix “a” or with different numerals. In FIG. 9, a passivation layer 22 a comprising a silicone material is formed to be inherently photoimageable. An example preferred photoimageable silicone material for passivation layer 22 a is the same M300-P material referred to above. Such can enable the fabrication of the substrate using photolithography without using a separate photoresist material which is ultimately removed from the substrate. FIG. 9 depicts exemplary alternate processing to that depicted by FIG. 8, whereby passivation layer 22 a has been photopatterned, for example utilizing a mask, with suitable actinic energy effective to change the solubility in a solvent of selected regions of the passivation layer which are received over bond pads 14. FIG. 9 depicts such substrate as having been exposed to a suitable developing solvent effective to remove the selected regions from over the bond pads, thereby forming exemplary openings 26 therein/in place thereof. Accordingly, if desired, such processing can be essentially identical to that of FIG. 7, but void of any photoresist layer over passivation layer 22 a.
  • Referring to FIG. 10, the removed selected regions of [0033] passivation layer 22 a have been etched through, utilizing layer 22 a as a mask, layers 20, 18 and 16 to expose bond pads 14. Again and preferably, such can be conducted without any use of photoresist over layer 22 a.
  • The above depicts but two example of forming openings through silicone material containing [0034] passivation layer 22 to bond pads 14, with each utilizing photolithography and etch. However, other methods utilizing photolithography and etch, as well as methods not utilizing photolithography and etch, are also contemplated, and whether existing or yet-to-be developed. Further, the above exemplary processing forms the passivation layer comprising silicone material over one or more other passivation layers, for example those comprising polyimide and silicon nitride. One or both of the polyimide or silicon nitride layers might be eliminated, or one or more other layers substituted therefor. The same applies with respect to the preferred embodiment undoped silicon dioxide passivation layer 16. Further, the orders of any of the above layers could be switched or otherwise modified, with the embodiment in the initially described order being but one preferred example. Further but less preferred, the passivation layer comprising the silicone material might be fabricated to be other than the outermost layer. Also in the depicted and preferred embodiments, the passivation layer comprising silicone material is formed such that it is not in contact with bond pads 14, although such could be fabricated to be in contact with bond pads 14.
  • FIG. 11 illustrates an alternate embodiment processing with respect to a [0035] substrate 10 b. Like numerals from the first described embodiments are utilized where appropriate, with differences being indicated with the suffix “b” or with different numerals. FIG. 11 illustrates processing subsequent to that of FIG. 4 whereby openings 50 have been formed through layers 18 and 16 to bond pads 14. Such could be by photolithographic and etch manners, or by any other means whether existing of yet-to-be-developed.
  • Referring to FIG. 12, a polyimide comprising [0036] passivation layer 20 b is formed over passivation layers 16 and 18 to within openings 50. Silicone material comprising passivation layer 22 is formed thereover.
  • Referring to FIG. 13, [0037] openings 26 are formed to bond pads 14. Again, such could be by photolithographic and etch manners, or by any other means whether existing of yet-to-be-developed.
  • Referring to FIG. 14, die [0038] 12 have been singulated from substrate 10/10 a/10 b. Such as singulated die comprise at least some outermost layer, i.e., layer 22/22 a, which predominately comprises the passivation layer having the silicone material. Alternately, the substrate might be fabricated such that the illustrated uppermost/outermost layer does not predominately comprise the passivation layer containing silicone material. Regardless if desired, such can be mounted or otherwise provided with respect to other substrates, and wire or other bond connections made through the illustrated openings to the bond pads.
  • Referring to FIG. 15, an exemplary [0039] additional substrate 40 is shown bonded to die 12 using a resin 42 containing solid particles 44. Such provides but one example of contacting the passivation layer comprising silicone material with a silica particle containing resin, in but one exemplary preferred embodiment.
  • In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. [0040]

Claims (37)

1. A method of fabricating integrated circuitry comprising:
providing a substrate comprising a plurality of integrated circuitry die, individual of the die having bond pads;
forming a passivation layer comprising a silicone material over the bond pads;
forming openings through the silicone material to the bond pads; and
after forming the openings, singulating the die from the substrate.
2. The method of claim 1 comprising forming the passivation layer comprising silicone material to have a Young's modulus of no greater than 9.0 GPa.
3. The method of claim 1 wherein the forming of openings comprises photolithography and etch utilizing photoresist that is completely removed from the substrate prior to the singulating.
4. The method of claim 1 wherein the forming of openings comprises photolithography and etch utilizing a photosensitive substance that comprises a part of the singulated die.
5. The method of claim 1 wherein the passivation layer comprising silicone material is not formed in contact with the bond pads.
6. The method of claim 1 comprising after the singulating, contacting the passivation layer comprising silicone material with a solid particle containing resin.
7. The method of claim 1 comprising forming the passivation layer comprising silicone material over a passivation layer comprising polyimide.
8. The method of claim 1 comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of polyimide.
9. The method of claim 1 comprising forming the passivation layer comprising silicone material over a passivation layer comprising silicon nitride.
10. The method of claim 1 comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of silicon nitride.
11. The method of claim 1 wherein the die as singulated from the substrate comprise an outermost layer predominately comprising the passivation layer comprising silicone material.
12. The method of claim 1 comprising forming the passivation layer comprising silicone material over another passivation layer, and forming openings to the bond pads through the another passivation layer prior to forming the passivation layer comprising silicone material.
13. The method of claim 1 comprising forming a silicon dioxide comprising passivation layer over the bond pads;
forming a silicon nitride comprising passivation layer over the silicon dioxide comprising passivation layer;
forming openings through the passivation layer comprising silicon nitride and through the passivation layer comprising silicon dioxide to the bond pads;
forming a passivation layer comprising polyimide over the passivation layer comprising silicon nitride and to within the openings formed through the passivation layer comprising silicon nitride and the passivation layer comprising silicon dioxide;
the passivation layer comprising silicone material being formed over the passivation layer comprising polyimide; and
the openings through the silicone material to the bond pads also being formed through the passivation layer comprising polyimide.
14. A method of fabricating integrated circuitry comprising:
providing a substrate comprising a plurality of integrated circuitry die, individual of the die having bond pads;
forming a passivation layer comprising a photoimageable silicone material over the plurality of die;
photopatterning the passivation layer comprising a photoimageable silicone material with actinic energy effective to change solubility in a solvent of selected regions of the passivation layer which are received over the bond pads;
exposing the photopatterned passivation layer to the solvent effective to remove the selected regions from over the bond pads; and
after the exposing, singulating the die from the substrate.
15. The method of claim 14 wherein the photopatterning is void of any photoresist layer received over the passivation layer comprising photoimageable silicone material.
16. The method of claim 14 comprising:
providing at least one additional passivation layer intermediate the passivation layer comprising photoimageable silicone; and
after the exposing and before the singulating, etching the at least one additional passivation layer through the removed selected regions using the passivation layer comprising photoimageable silicone material as a mask and effective to expose the bond pads.
17. The method of claim 16 wherein the photopatterning is void of any photoresist layer received over the passivation layer comprising photoimageable silicone material, and the etching is void of any photoresist layer received over the passivation layer comprising photoimageable silicone material.
18. The method of claim 14 comprising after the singulating, contacting the passivation layer comprising silicone material with a solid particle containing resin.
19. The method of claim 14 comprising forming the passivation layer comprising silicone material to have a Young's modulus of no greater than 9.0 GPa.
20. The method of claim 14 wherein the passivation layer comprising silicone material is not formed in contact with the bond pads.
21. The method of claim 14 comprising forming the passivation layer comprising silicone material over a passivation layer comprising polyimide.
22. The method of claim 14 comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of polyimide.
23. The method of claim 14 comprising forming the passivation layer comprising silicone material over a passivation layer comprising silicon nitride.
24. The method of claim 14 comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of silicon nitride.
25. The method of claim 14 wherein the die as singulated from the substrate comprise an outermost layer predominately comprising the passivation layer comprising silicone material.
26. The method of claim 14 comprising forming the passivation layer comprising silicone material over another passivation layer, and forming openings to the bond pads through the another passivation layer prior to forming the passivation layer comprising silicone material.
27. The method of claim 14 comprising forming a silicon dioxide comprising passivation layer over the bond pads;
forming a silicon nitride comprising passivation layer over the silicon dioxide comprising passivation layer;
forming openings through the passivation layer comprising silicon nitride and through the passivation layer comprising silicon dioxide to the bond pads;
forming a passivation layer comprising polyimide over the passivation layer comprising silicon nitride and to within the openings formed through the passivation layer comprising silicon nitride and the passivation layer comprising silicon dioxide;
the passivation layer comprising silicone material being formed over the passivation layer comprising polyimide; and
the openings through the silicone material to the bond pads also being formed through the passivation layer comprising polyimide.
28. A method of fabricating integrated circuitry comprising:
providing a substrate comprising a plurality of integrated circuitry die, individual of the die having bond pads;
forming a first blanket passivation layer over the substrate in contact with the bond pads;
forming a different second blanket passivation layer comprising a silicone material over the first passivation layer;
forming openings through the first and second passivation layers to the bond pads; and
after forming the openings, singulating the die from the substrate.
29. The method of claim 28 wherein the first passivation layer consists essentially of silicon dioxide.
30. The method of claim 28 wherein the second passivation layer is formed on the first passivation layer.
31. The method of claim 28 wherein at least one different additional passivation layer is formed over the first passivation layer prior to forming the different second passivation layer, and such that the different second passivation layer is not formed on the first passivation layer.
32. The method of claim 28 wherein at least two different additional passivation layers are formed over the first passivation layer prior to forming the different second passivation layer, and such that the different second passivation layer is not formed on the first passivation layer.
33. The method of claim 28 wherein the different second passivation layer is of a photoimageable composition, and the openings are formed by photolithography and etch which are void of any photoresist layer received over the passivation layer comprising photoimageable silicone material.
34. The method of claim 28 comprising forming the second passivation layer comprising silicone material to have a Young's modulus of no greater than 9.0 GPa.
35. The method of claim 28 comprising after the singulating, contacting the second passivation layer comprising silicone material with a solid particle containing resin.
36. The method of claim 28 wherein the die as singulated from the substrate comprise an outermost layer predominately comprising the second passivation layer comprising silicone material.
37. The method of claim 28 comprising forming the first passivation layer over another passivation layer, and forming openings to the bond pads through the another passivation layer prior to forming the first passivation layer.
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US9379265B2 (en) 2008-09-29 2016-06-28 Sol Chip Ltd. Integrated circuit combination of a target integrated circuit, photovoltaic cells and light sensitive diodes connected to enable a self-sufficient light detector device
US9698299B2 (en) * 2008-09-29 2017-07-04 Sol Chip Ltd. Integrated circuit combination of a target integrated circuit and a plurality of thin film photovoltaic cells connected thereto using a conductive path

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US20060030077A1 (en) 2006-02-09
US8461685B2 (en) 2013-06-11
US20060030078A1 (en) 2006-02-09

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