US20040079633A1 - Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing - Google Patents
Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing Download PDFInfo
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- US20040079633A1 US20040079633A1 US10/686,486 US68648603A US2004079633A1 US 20040079633 A1 US20040079633 A1 US 20040079633A1 US 68648603 A US68648603 A US 68648603A US 2004079633 A1 US2004079633 A1 US 2004079633A1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
Description
- This application is a continuation of co-pending U.S. patent application Ser. No. 09/609,347, filed Jul. 5, 2000, which claims benefit of United States. Each of the aforementioned related patent applications is herein incorporated by reference.
- 1. Field of the Invention
- The present invention generally relates to deposition of a metal layer onto a wafer/substrate. More particularly, the present invention relates to an electro-chemical deposition system or electroplating system for forming a metal layer on a wafer/substrate.
- 2. Description of the Related Art
- Sub-quarter micron, multi-level metallization is one of the key technologies for the next generation of ultra large scale integration (ULSI). The multilevel interconnects that lie at the heart of this technology require planarization of interconnect features formed in high aspect ratio apertures, including contacts, vias, lines and other features. Reliable formation of these interconnect features is very important to the success of ULSI and to the continued effort to increase circuit density and quality on individual substrates and die.
- As circuit densities increase, the widths of vias, contacts and other features, as well as the dielectric materials between them, decrease to less than 250 nanometers, whereas the thickness of the dielectric layers remains substantially constant, with the result that the aspect ratios for the features, i.e., their height divided by width, increases. Many traditional deposition processes, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have difficulty filling structures where the aspect ratio exceed 4:1, and particularly where it exceeds 10:1. Therefore, there is a great amount of ongoing effort being directed at the formation of void-free, nanometer-sized features having high aspect ratios wherein the ratio of feature height to feature width can be 4:1 or higher. Additionally, as the feature widths decrease, the device current remains constant or increases, which results in an increased current density in the feature.
- Elemental aluminum (Al) and its alloys have been the traditional metals used to form lines and plugs in semiconductor processing because of aluminum's perceived low electrical resistivity, its superior adhesion to silicon dioxide (SiO2), its ease of patterning, and the ability to obtain it in a highly pure form. However, aluminum has a higher electrical resistivity than other more conductive metals such as copper, and aluminum also can suffer from electromigration leading to the formation of voids in the conductor.
- Copper and its alloys have lower resistivities than aluminum and significantly higher electromigration resistance as compared to aluminum. These characteristics are important for supporting the higher current densities experienced at high levels of integration and increase device speed. Copper also has good thermal conductivity and is available in a highly pure state. Therefore, copper is becoming a choice metal for filling sub-quarter micron, high aspect ratio interconnect features on semiconductor substrates.
- Despite the desirability of using copper for semiconductor device fabrication, choices of fabrication methods for depositing copper into very high aspect ratio features, such as a 4:1, having 0.35μ (or less) wide vias are limited. As a result of these process limitations, plating, which had previously been limited to the fabrication of lines on circuit boards, is just now being used to fill vias and contacts on semiconductor devices.
- Metal electroplating is generally known and can be achieved by a variety of techniques. A typical method generally comprises physical vapor depositing a barrier layer over the feature surfaces, physical vapor depositing a conductive metal seed layer, preferably copper, over the barrier layer, and then electroplating a conductive metal over the seed layer to fill the structure/feature. Finally, the deposited layers and the dielectric layers are planarized, such as by chemical mechanical polishing (CMP), to define a conductive interconnect feature.
- FIG. 1 is a cross sectional view of a simplified
typical fountain plater 10 incorporating contact pins. Generally, thefountain plater 10 includes anelectrolyte container 12 having a top opening, asubstrate holder 14 disposed above theelectrolyte container 12, ananode 16 disposed at a bottom portion of theelectrolyte container 12 and acontact ring 20 contacting the substrate 22. A plurality ofgrooves 24 are formed in the lower surface of thesubstrate holder 14. A vacuum pump (not shown) is coupled to thesubstrate holder 14 and communicates with thegrooves 24 to create a vacuum condition capable of securing the substrate 22 to thesubstrate holder 14 during processing. Thecontact ring 20 comprises a plurality of metallic orsemi-metallic contact pins 26 distributed about the peripheral portion of the substrate 22 to define a central substrate plating surface. The plurality ofcontact pins 26 extend radially inwardly over a narrow perimeter portion of the substrate 22 and contact a conductive seed layer of the substrate 22 at the tips of thecontact pins 26. A power supply (not shown) is attached to thepins 26 thereby providing an electrical bias to the substrate 22. The substrate 22 is positioned above thecylindrical electrolyte container 12 and electrolyte flow impinges perpendicularly on the substrate plating surface during operation of thecell 10. - While present day electroplating cells, such as the one shown in FIG. 1, achieve acceptable results on larger scale substrates, a number of obstacles impair consistent reliable electroplating onto substrates having micron-sized, high aspect ratio features. Generally, these obstacles include providing uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness, preventing unwanted edge and backside deposition to control contamination to the substrate being processed as well as subsequent substrates, and maintaining a vacuum condition which secures the substrate to the substrate holder during processing. Also, the present day electroplating cells have not provided satisfactory throughput to meet the demands of other processing systems and are not designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements. Furthermore, current electroplating system platforms have not provided post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results within the same system platform.
- Therefore, there remains a need for an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. There is also a need for an electro-chemical deposition system that provides uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness and maintain a vacuum condition which secures the substrate to the substrate holder during processing. It would be desirable for the system to prevent and/or remove unwanted edge and backside deposition to control contamination to the substrate being processed as well as subsequent substrates. It would be further desirable for the electro-chemical deposition system to provide a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results.
- The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
- One aspect of the invention provides an electro-chemical deposition system that provides uniform power distribution and current density across the substrate plating surface to form a metal layer having uniform thickness and maintain a vacuum condition which secures the substrate to the substrate holder during processing.
- Another aspect of the invention provides an electro-chemical deposition system that prevents and/or remove unwanted edge and backside deposition to control contamination to the substrate being processed as well as subsequent substrates.
- Yet another aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. The apparatus for rapid thermal anneal treatment preferably comprises a rapid thermal anneal chamber disposed adjacent the loading station of the electrochemical deposition system.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- So that the manner in which the above recited features, advantages and objects of the present invention are attained can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
- It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- FIG. 1 is a cross sectional view of a simplified
typical fountain plater 10 incorporating contact pins. - FIG. 2 is a perspective view of an
electroplating system platform 200 of the invention. - FIG. 3 is a schematic view of an
electroplating system platform 200 of the invention. - FIG. 4 is a schematic perspective view of a spin-rinse-dry (SRD) module of the present invention, incorporating rinsing and dissolving fluid inlets.
- FIG. 5 is a side cross sectional view of the spin-rinse-dry (SRD) module of FIG. 4 and shows a substrate in a processing position vertically disposed between fluid inlets.
- FIG. 6 is a cross sectional view of an
electroplating process cell 400 according to the invention. - FIG. 7 is a partial cross sectional perspective view of a cathode contact ring.
- FIG. 8 is a cross sectional perspective view of the cathode contact ring showing an alternative embodiment of contact pads.
- FIG. 9 is a cross sectional perspective view of the cathode contact ring showing an alternative embodiment of the contact pads and an isolation gasket.
- FIG. 10 is a cross sectional perspective view of the cathode contact ring showing the isolation gasket.
- FIG. 11 is a simplified schematic diagram of the electrical circuit representing the electroplating system through each contact pin.
- FIG. 12 is a cross sectional view of a
wafer assembly 450 of the invention. - FIG. 12A is an enlarged cross sectional view of the bladder area of FIG. 12.
- FIG. 13 is a partial cross sectional view of a wafer holder plate.
- FIG. 14 is a partial cross sectional view of a manifold.
- FIG. 15 is a partial cross sectional view of a bladder.
- FIG. 16 is a schematic diagram of an electrolyte replenishing system600.
- FIG. 17 is a cross sectional view of a rapid thermal anneal chamber.
- FIG. 2 is a perspective view of an
electroplating system platform 200 of the invention. FIG. 3 is a schematic view of anelectroplating system platform 200 of the invention. Referring to both FIGS. 2 and 3, theelectroplating system platform 200 generally comprises aloading station 210, athermal anneal chamber 211, a spin-rinse-dry (SRD)station 212 and amainframe 214. Preferably, theelectroplating system platform 200 is enclosed in a clean environment using panels such as plexiglass panels. Themainframe 214 generally comprises amainframe transfer station 216 and a plurality ofprocessing stations 218. Eachprocessing station 218 includes one ormore processing cells 240. Anelectrolyte replenishing system 220 is positioned adjacent theelectroplating system platform 200 and connected to theprocess cells 240 individually to circulate electrolyte used for the electroplating process. Theelectroplating system platform 200 also includes acontrol system 222, typically comprising a programmable microprocessor. - The
loading station 210 preferably includes one or more wafercassette receiving areas 224, one or more loadingstation transfer robots 228 and at least onewafer orientor 230. The number of wafer cassette receiving areas, loadingstation transfer robots 228 and wafer orientor included in theloading station 210 can be configured according to the desired throughput of the system. As shown for one embodiment in FIGS. 2 and 3, theloading station 210 includes two wafercassette receiving areas 224, two loadingstation transfer robots 228 and onewafer orientor 230. Awafer cassette 232 containingwafers 234 is loaded onto the wafercassette receiving area 224 to introducewafers 234 into the electroplating system platform. The loadingstation transfer robot 228transfers wafers 234 between thewafer cassette 232 and thewafer orientor 230. The loadingstation transfer robot 228 comprises a typical transfer robot commonly known in the art. The wafer orientor 230 positions eachwafer 234 in a desired orientation to ensure that the wafer is properly processed. The loadingstation transfer robot 228 also transferswafers 234 between theloading station 210 and theSRD station 212 and between theloading station 210 and thethermal anneal chamber 211. - FIG. 4 is a schematic perspective view of a spin-rinse-dry (SRD) module of the present invention, incorporating rinsing and dissolving fluid inlets. FIG. 5 is a side cross sectional view of the spin-rinse-dry (SRD) module of FIG. 4 and shows a substrate in a processing position vertically disposed between fluid inlets. Preferably, the
SRD station 212 includes one ormore SRD modules 236 and one or more wafer pass-throughcassettes 238. Preferably, theSRD station 212 includes twoSRD modules 236 corresponding to the number of loadingstation transfer robots 228, and a wafer pass-throughcassette 238 is positioned above eachSRD module 236. The wafer pass-throughcassette 238 facilitates wafer transfer between theloading station 210 and themainframe 214. The wafer pass-throughcassette 238 provides access to and from both the loadingstation transfer robot 228 and a robot in themainframe transfer station 216. - Referring to FIGS. 4 and 5, the
SRD module 238 comprises a bottom 330 a and asidewall 330 b, and anupper shield 330 c which collectively define aSRD module bowl 330 d, where the shield attaches to the sidewall and assists in retaining the fluids within the SRD module. Alternatively, a removable cover could also be used. Apedestal 336, located in the SRD module, includes apedestal support 332 and apedestal actuator 334. Thepedestal 336 supports the substrate 338 (shown in FIG. 5) on the pedestal upper surface during processing. Thepedestal actuator 334 rotates the pedestal to spin the substrate and raises and lowers the pedestal as described below. The substrate may be held in place on the pedestal by a plurality ofclamps 337. The clamps pivot with centrifugal force and engage the substrate preferably in the edge exclusion zone of the substrate. In a preferred embodiment, the clamps engage the substrate only when the substrate lifts off the pedestal during the processing. Vacuum passages (not shown) may also be used as well as other holding elements. The pedestal has a plurality ofpedestal arms outlet 339 allows fluid to be removed from the SRD module. The terms “below”, “above”, “bottom”, “top”, “up”, “down”, “upper”, and “lower” and other positional terms used herein are shown with respect to the embodiments in the figures and may be varied depending on the relative orientation of the processing apparatus. - A
first conduit 346, through which afirst fluid 347 flows, is connected to avalve 347 a. The conduit may be hose, pipe, tube, or other fluid containing conduits. Thevalve 347 a controls the flow of thefirst fluid 347 and may be selected from a variety of valves including a needle, globe, butterfly, or other valve types and may include a valve actuator, such as a solenoid, that can be controlled with acontroller 362. Theconduit 346 connects to a firstfluid inlet 340 that is located above the substrate and includes a mountingportion 342 to attach to the SRD module and a connectingportion 344 to attach to theconduit 346. The first fluid inlet is shown with a singlefirst nozzle 348 to deliver afirst fluid 347 under pressure onto the substrate upper surface. However, multiple nozzles could be used and multiple fluid inlets could be positioned about the inner perimeter of the SRD module. Preferably, nozzles placed above the substrate should be outside the diameter of the substrate to lessen the risk of the nozzles dripping on the substrate. The first fluid inlet could be mounted in a variety of locations, including through a cover positioned above the substrate. Additionally, the nozzle may articulate to a variety of positions using an articulatingmember 343, such as a ball and socket joint. - Similar to the first conduit and related elements described above, a
second conduit 352 is connected to acontrol valve 349 a and a secondfluid inlet 350 with asecond nozzle 351. The secondfluid inlet 350 is shown below the substrate and angled upward to direct a second fluid under the substrate through thesecond nozzle 351. Similar to the first fluid inlet, the second fluid inlet may include a plurality of nozzles, a plurality of fluid inlets and mounting locations, and a plurality of orientations including using the articulatingmember 353. Each fluid inlet could be extended into the SRD module at a variety of positions. For instance, if the flow is desired to be a certain angle that is directed back toward the SRD module periphery along the edge of the substrate, the nozzles could be extended radially inward and the discharge from the nozzles be directed back toward the SRD module periphery. - The
controller 362 could individually control the two fluids and their respective flow rates, pressure, and timing, and any associated valving, as well as the spin cycle(s). The controller could be remotely located, for instance, in a control panel or control room and the plumbing controlled with remote actuators. An alternative embodiment, shown in dashed lines, provides anauxiliary fluid inlet 346 a connected to thefirst conduit 346 with aconduit 346 b and having acontrol valve 346 c, which may be used to flow a rinsing fluid on the backside of the substrate after the dissolving fluid is flown without having to reorient the substrate or switch the flow through the second fluid inlet to a rinsing fluid. - In one embodiment, the substrate is mounted with the deposition surface of the disposed face up in the SRD module bowl. As will be explained below, for such an arrangement, the first fluid inlet would generally flow a rinsing fluid, typically deionized water or alcohol. Consequently, the backside of the substrate would be mounted facing down and a fluid flowing through the second fluid inlet would be a dissolving fluid, such as an acid, including hydrochloric acid, sulfuric acid, phosphoric acid, hydrofluoric acid, or other dissolving liquids or fluids, depending on the material to be dissolved. Alternatively, the first fluid and the second fluid are both rinsing fluids, such as deionized water or alcohol, when the desired process is to rinse the processed substrate.
- In operation, the pedestal is in a raised position, shown in FIG. 4, and a robot (not shown) places the substrate, front side up, onto the pedestal. The pedestal lowers the substrate to a processing position where the substrate is vertically disposed between the first and the second fluid inlets. Generally, the pedestal actuator rotates the pedestal between about 5 to about 5000 rpm, with a typical range between about 20 to about 2000 rpm for a 200 mm substrate. The rotation causes the
lower end 337 a of the clamps to rotate outward aboutpivot 337 b, toward the periphery of the SRD module sidewall, due to centrifugal force. The clamp rotation forces theupper end 337 c of the clamp inward and downward to center and hold thesubstrate 338 in position on thepedestal 336, preferably along the substrate edge. The clamps may rotate into position without touching the substrate and hold the substrate in position on the pedestal only if the substrate significantly lifts off the pedestal during processing. With the pedestal rotating the substrate, a rinsing fluid is delivered onto the substrate front side through the firstfluid inlet 340. The second fluid, such as an acid, is delivered to the backside surface through the second fluid inlet to remove any unwanted deposits. The dissolving fluid chemically reacts with the deposited material and dissolves and then flushes the material away from the substrate backside and other areas where any unwanted deposits are located. In a preferred embodiment, the rinsing fluid is adjusted to flow at a greater rate than the dissolving fluid to help protect the front side of the substrate from the dissolving fluid. The first and second fluid inlets are located for optimal performance depending on the size of the substrate, the respective flow rates, spray patterns, and amount and type of deposits to be removed, among other factors. In some instances, the rinsing fluid could be routed to the second fluid inlet after a dissolving fluid has dissolved the unwanted deposits to rinse the backside of the substrate. In other instances, an auxiliary fluid inlet connected to flow rinsing fluid on the backside of the substrate could be used to rinse any dissolving fluid residue from the backside. After rinsing the front side and/or backside of the substrate, the fluid(s) flow is stopped and the pedestal continues to rotate, spinning the substrate, and thereby effectively drying the surface. - The fluid(s) is generally delivered in a spray pattern, which may be varied depending on the particular nozzle spray pattern desired and may include a fan, jet, conical, and other patterns. One spray pattern for the first and second fluids through the respective fluid inlets, when the first fluid is a rinsing fluid, is fan pattern with a pressure of about 10 to about 15 pounds per square inch (psi) and a flow rate of about 1 to about 3 gallons per minute (gpm) for a 200 mm wafer.
- The invention could also be used to remove the unwanted deposits along the edge of the substrate to create an edge exclusion zone. By adjustment of the orientation and placement of the nozzles, the flow rates of the fluids, the rotational speed of the substrate, and the chemical composition of the fluids, the unwanted deposits could be removed from the edge and/or edge exclusion zone of the substrate as well. Thus, substantially preventing dissolution of the deposited material on the front side surface may not necessarily include the edge or edge exclusion zone of the substrate. Also, preventing dissolution of the deposited material on the front side surface is intended to include at least preventing the dissolution so that the front side with the deposited material is not impaired beyond a commercial value.
- One method of accomplishing the edge exclusion zone dissolution process is to rotate the disk at a slower speed, such as about 100 to about 1000 rpm, while dispensing the dissolving fluid on the backside of the substrate. The centrifugal force moves the dissolving fluid to the edge of the substrate and forms a layer of fluid around the edge due to surface tension of the fluid, so that the dissolving fluid overlaps from the backside to the front side in the edge area of the substrate. The rotational speed of the substrate and the flow rate of the dissolving fluid may be used to determine the extent of the overlap onto the front side. For instance, a decrease in rotational speed or an increase in flow results in a less overlap of fluid to the opposing side, e.g., the front side. Additionally, the flow rate and flow angle of the rinsing fluid delivered to the front side can be adjusted to offset the layer of dissolving fluid onto the edge and/or frontside of the substrate. In some instances, the dissolving fluid may be used initially without the rinsing fluid to obtain the edge and/or edge exclusion zone removal, followed by the rinsing/dissolving process of the present invention described above.
- The
SRD module 238 is connected between theloading station 210 and themainframe 214. Themainframe 214 generally comprises amainframe transfer station 216 and a plurality ofprocessing stations 218. Referring to FIGS. 2 and 3, themainframe 214, as shown, includes twoprocessing stations 218, eachprocessing station 218 having two processingcells 240. Themainframe transfer station 216 includes amainframe transfer robot 242. Preferably, themainframe transfer robot 242 comprises a plurality ofindividual robot arms 244 that provides independent access of wafers in theprocessing stations 218 and theSRD stations 212. As shown in FIG. 3, themainframe transfer robot 242 comprises tworobot arms 244, corresponding to the number ofprocessing cells 240 perprocessing station 218. Eachrobot arm 244 includes arobot blade 246 for holding a wafer during a wafer transfer. Preferably, eachrobot arm 244 is operable independently of the other arm to facilitate independent transfers of wafers in the system. Alternatively, therobot arms 244 operate in a linked fashion such that one robot extends as the other robot arm retracts. - Preferably, the
mainframe transfer station 216 includes aflipper robot 248 that facilitates transfer of a wafer from a face-up position on therobot blade 246 of themainframe transfer robot 242 to a face down position for aprocess cell 240 that requires face-down processing of wafers. Theflipper robot 248 includes amain body 250 that provides both vertical and rotational movements with respect to a vertical axis of themain body 250 and aflipper robot arm 252 that provides rotational movement along a horizontal axis along theflipper robot arm 252. Preferably, avacuum suction gripper 254, disposed at the distal end of theflipper robot arm 252, holds the wafer as the wafer is flipped and transferred by theflipper robot 248. Theflipper robot 248 positions awafer 234 into theprocessing cell 240 for face-down processing. The details of the electroplating processing cell according to the invention will be discussed below. - FIG. 6 is a cross sectional view of an
electroplating process cell 400 according to the invention. Theelectroplating process cell 400 as shown in FIG. 6 is the same as theelectroplating process cell 240 as shown in FIGS. 2 and 3. Theprocessing cell 400 generally comprises ahead assembly 410, aprocess kit 420 and anelectrolyte collector 440. Preferably, theelectrolyte collector 440 is secured onto thebody 442 of themainframe 214 over anopening 443 that defines the location for placement of theprocess kit 420. Theelectrolyte collector 440 includes aninner wall 446, anouter wall 448 and a bottom 447 connecting the walls. Anelectrolyte outlet 449 is disposed through thebottom 447 of theelectrolyte collector 440 and connected to the electrolyte replenishing system 220 (shown in FIG. 2) through tubes, hoses, pipes or other fluid transfer connectors. - The
head assembly 410 is mounted onto ahead assembly frame 452. Thehead assembly frame 452 includes a mountingpost 454 and acantilever arm 456. The mountingpost 454 is mounted onto thebody 442 of themainframe 214, and thecantilever arm 456 extends laterally from an upper portion of the mountingpost 454. Preferably, the mountingpost 454 provides rotational movement with respect to a vertical axis along the mounting post to allow rotation of thehead assembly 410. Thehead assembly 410 is attached to a mountingplate 460 disposed at the distal end of thecantilever arm 456. The lower end of thecantilever arm 456 is connected to acantilever arm actuator 457, such as a pneumatic cylinder, mounted on the mountingpost 454. Thecantilever arm actuator 457 provides pivotal movement of thecantilever arm 456 with respect to the joint between thecantilever arm 456 and the mountingpost 454. When thecantilever arm actuator 457 is retracted, thecantilever arm 456 moves thehead assembly 410 away from theprocess kit 420 to provide the spacing required to remove and/or replace theprocess kit 420 from theelectroplating process cell 400. When thecantilever arm actuator 457 is extended, thecantilever arm 456 moves thehead assembly 410 toward theprocess kit 420 to position the wafer in thehead assembly 410 in a processing position. - The
head assembly 410 generally comprises awafer holder assembly 450 and awafer assembly actuator 458. Thewafer assembly actuator 458 is mounted onto the mountingplate 460, and includes ahead assembly shaft 462 extending downwardly through the mountingplate 460. The lower end of thehead assembly shaft 462 is connected to thewafer holder assembly 450 to position thewafer holder assembly 450 in a processing position and in a wafer loading position. - The
wafer holder assembly 450 generally comprises awafer holder 464 and acathode contact ring 466. FIG. 7 is a cross sectional view of one embodiment of acathode contact ring 466 of the present invention. In general, thecontact ring 466 comprises an annular body having a plurality of conducting members disposed thereon. The annular body is constructed of an insulating material to electrically isolate the plurality of conducting members. Together the body and conducting members form a diametrically interior substrate seating surface which, during processing, supports a substrate and provides a current thereto. - Referring now to FIG. 7 in detail, the
contact ring 466 generally comprises a plurality of conductingmembers 765 at least partially disposed within an annularinsulative body 770. Theinsulative body 770 is shown having aflange 762 and a downwardsloping shoulder portion 764 leading to asubstrate seating surface 768 located below theflange 762 such that theflange 762 and thesubstrate seating surface 768 lie in offset and substantially parallel planes. Thus, theflange 762 may be understood to define a first plane while thesubstrate seating surface 768 defines a second plane parallel to the first plane wherein theshoulder 764 is disposed between the two planes. However, contact ring design shown in FIG. 7 is intended to be merely illustrative. In another embodiment, theshoulder portion 764 may be of a steeper angle including a substantially vertical angle so as to be substantially normal to both theflange 762 and thesubstrate seating surface 768. Alternatively, thecontact ring 466 may be substantially planar thereby eliminating theshoulder portion 764. However, for reasons described below, a preferred embodiment comprises theshoulder portion 764 shown in FIG. 6 or some variation thereof. - The conducting
members 765 are defined by a plurality of outerelectrical contact pads 780 annularly disposed on theflange 762, a plurality of innerelectrical contact pads 772 disposed on a portion of thesubstrate seating surface 768, and a plurality of embedded conductingconnectors 776 which link thepads members 765 are isolated from one another by theinsulative body 770 which may be made of a plastic such as polyvinylidenefluoride (PVDF), perfluoroalkoxy resin (PFA), Teflon™, and Tefzel™, or any other insulating material such as Alumina (Al2O3) or other ceramics. Theouter contact pads 780 are coupled to a power supply (not shown) to deliver current and voltage to theinner contact pads 772 via theconnectors 776 during processing. In turn, theinner contact pads 772 supply the current and voltage to a substrate by maintaining contact around a peripheral portion of the substrate. Thus, in operation the conductingmembers 765 act as discrete current paths electrically connected to a substrate. - Low resistivity, and conversely high conductivity, are directly related to good plating. To ensure low resistivity, the conducting
members 765 are preferably made of copper (Cu), platinum (Pt), tantalum (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel or other conducting materials. Low resistivity and low contact resistance may also be achieved by coating the conductingmembers 765 with a conducting material. Thus, the conductingmembers 765 may, for example, be made of copper (resistivity for copper is approximately 2×10−8 Ω.m) and be coated with platinum (resistivity for platinum is approximately 10.6×10−8 Ω.m). Coatings such as tantalum nitride (TaN), titanium nitride (TiN), rhodium (Rh), Au, Cu, or Ag on a conductive base materials such as stainless steel, molybdenum (Mo), Cu, and Ti are also possible. Further, since thecontact pads connectors 776, thecontact pads members 765 another, such as stainless steel. Either or both of thepads 772, 180 and conductingconnectors 776 may be coated with a conducting material. Additionally, because plating repeatability may be adversely affected by oxidation which acts as an insulator, theinner contact pads 772 preferably comprise a material resistant to oxidation such as Pt, Ag, or Au. - In addition to being a function of the contact material, the total resistance of each circuit is dependent on the geometry, or shape, of the inner contact
inner contact pads 772 and the force supplied by thecontact ring 466. These factors define a constriction resistance, RCR, at the interface of theinner contact pads 772 and thesubstrate seating surface 768 due to asperities between the two surfaces. Generally, as the applied force is increased the apparent area is also increased. The apparent area is, in turn, inversely related to RCR so that an increase in the apparent area results in a decreased RCR. Thus, to minimize overall resistance it is preferable to maximize force. The maximum force applied in operation is limited by the yield strength of a substrate which may be damaged under excessive force and resulting pressure. However, because pressure is related to both force and area, the maximum sustainable force is also dependent on the geometry of theinner contact pads 772. Thus, while thecontact pads 772 may have a flat upper surface as in FIG. 7, other shapes may be used to advantage. For example, two preferred shapes are shown in FIGS. 8 and 9. FIG. 8 shows a knife-edge contact pad and FIG. 9 shows a hemispherical contact pad. A person skilled in the art will readily recognize other shapes which may be used to advantage. A more complete discussion of the relation between contact geometry, force, and resistance is given in Ney Contact Manual, by Kenneth E. Pitney, The J. M. Ney Company, 1973, which is hereby incorporated by reference in its entirety. - The number of
connectors 776 may be varied depending on the particular number of contact pads 772 (shown in FIG. 7) desired. For a 200 mm substrate, preferably at least twenty-fourconnectors 776 are spaced equally over 360°. However, as the number of connectors reaches a critical level, the compliance of the substrate relative to thecontact ring 466 is adversely affected. Therefore, while more than twenty-fourconnectors 776 may be used, contact uniformity may eventually diminish depending on the topography of thecontact pads 772 and the substrate stiffness. Similarly, while less than twenty-fourconnectors 776 may be used, current flow is increasingly restricted and localized, leading to poor plating results. Since the dimensions of the present invention are readily altered to suit a particular application (for example, a 300 mm substrate), the optimal number may easily be determined for varying scales and embodiments. - As shown in FIG. 10, the
substrate seating surface 768 comprises anisolation gasket 782 disposed on theinsulative body 770 and extending diametrically interior to theinner contact pads 772 to define the inner diameter of thecontact ring 466. Theisolation gasket 782 preferably extends slightly above the inner contact pads 772 (e.g., a few mils) and preferably comprises an elastomer such as Viton™, Teflon™, buna rubber and the like. Where theinsulative body 770 also comprises an elastomer theisolation gasket 782 may be of the same material. In the latter embodiment, theisolation gasket 782 and theinsulative body 770 may be monolithic, i.e., formed as a single piece. However, theisolation gasket 782 is preferably separate from theinsulative body 770 so that it may be easily removed for replacement or cleaning. - While FIG. 10 shows a preferred embodiment of the
isolation gasket 782 wherein the isolation gasket is seated entirely on theinsulative body 770, FIGS. 8 and 9 show an alternative embodiment. In the latter embodiment, theinsulative body 770 is partially machined away to expose the upper surface of the connectingmember 776 and theisolation gasket 782 is disposed thereon. Thus, theisolation gasket 782 contacts a portion of the connectingmember 776. This design requires less material to be used for theinner contact pads 772 which may be advantageous where material costs are significant such as when theinner contact pads 772 comprise gold. Persons skilled in the art will recognize other embodiments which do not depart from the scope of the present invention. - During processing, the
isolation gasket 782 maintains contact with a peripheral portion of the substrate plating surface and is compressed to provide a seal between the remainingcathode contact ring 466 and the substrate. The seal prevents the electrolyte from contacting the edge and backside of the substrate. As noted above, maintaining a clean contact surface is necessary to achieving high plating repeatability. Previous contact ring designs did not provide consist plating results because contact surface topography varied over time. The contact ring of the present invention eliminates, or least minimizes, deposits which would otherwise accumulate on theinner contact pads 772 and change their characteristics thereby producing highly repeatable, consistent, and uniform plating across the substrate plating surface. - FIG. 11 is a simplified schematic diagram representing a possible configuration of the electrical circuit for the
contact ring 466. To provide a uniform current distribution between the conductingmembers 765, anexternal resistor 700 is connected in series with each of the conductingmembers 765. Preferably, the resistance value of the external resistor 700 (represented as REXT) is much greater than the resistance of any other component of the circuit. As shown in FIG. 11, the electrical circuit through each conductingmember 765 is represented by the resistance of each of the components connected in series with thepower supply 702. RE represents the resistance of the electrolyte, which is typically dependent on the distance between the anode and the cathode contact ring and the composition of the electrolyte chemistry. Thus, RA represents the resistance of the electrolyte adjacent the substrate plating surface 754. RS represents the resistance of the substrate plating surface 754, and RC represents the resistance of thecathode conducting members 765 plus the constriction resistance resulting at the interface between theinner contact pads 772 and the substrate plating layer 754. Generally, the resistance value of the external resistor (REXT) is at least as much as ΣR (where ΣR equals the sum of RE, RA, RS RC). Preferably, the resistance value of the external resistor (REXT) is much greater than ΣR such that ΣR is negligible and the resistance of each series circuit approximates REXT. - Typically, one power supply is connected to all of the
outer contact pads 780 of thecathode contact ring 466, resulting in parallel circuits through theinner contact pads 772. However, as the inner contact pad-to-substrate interface resistance varies with eachinner contact pad 772, more current will flow, and thus more plating will occur, at the site of lowest resistance. However, by placing an external resistor in series with each conductingmember 765, the value or quantity of electrical current passed through each conductingmember 765 becomes controlled mainly by the value of the external resistor. As a result, the variations in the electrical properties between each of theinner contact pads 772 do not affect the current distribution on the substrate, and a uniform current density results across the plating surface which contributes to a uniform plating thickness. The external resistors also provide a uniform current distribution between different substrates of a process-sequence. - Although the
contact ring 466 of the present invention is designed to resist deposit buildup on theinner contact pads 772, over multiple substrate plating cycles the substrate-pad interface resistance may increase, eventually reaching an unacceptable value. An electronic sensor/alarm 704 can be connected across theexternal resistor 700 to monitor the voltage/current across the external resistor to address this problem. If the voltage/current across theexternal resistor 700 falls outside of a preset operating range that is indicative of a high substrate-pad resistance, the sensor/alarm 704 triggers corrective measures such as shutting down the plating process until the problems are corrected by an operator. Alternatively, a separate power supply can be connected to each conductingmember 765 and can be separately controlled and monitored to provide a uniform current distribution across the substrate. A very smart system (VSS) may also be used to modulate the current flow. The VSS typically comprises a processing unit and any combination of devices known in the industry used to supply and/or control current such as variable resistors, separate power supplies, etc. As the physiochemical, and hence electrical, properties of theinner contact pads 772 change over time, the VSS processes and analyzes data feedback. The data is compared to pre-established setpoints and the VSS then makes appropriate current and voltage alterations to ensure uniform deposition. - Referring to FIG. 6 and FIG. 12, preferably, the
wafer holder 464 is positioned above thecathode contact ring 466 and comprises a bladder assembly 470 that provides pressure to the backside of a wafer and ensures electrical contact between the wafer plating surface and thecathode contact ring 466. The inflatable bladder assembly 470 is disposed on awafer holder plate 832. Abladder 836 disposed on a lower surface of thewafer holder plate 832 is thus located opposite and adjacent to the contacts on thecathode contact ring 466 with thesubstrate 821 interposed therebetween. Afluid source 838 supplies a fluid, i.e., a gas or liquid, to thebladder 836 allowing thebladder 836 to be inflated to varying degrees. - Referring now to FIGS. 12, 12A, and13, the details of the bladder assembly 470 will be discussed. The
wafer holder plate 832 is shown as substantially disc-shaped having anannular recess 840 formed on a lower surface and a centrally disposedvacuum port 841. One ormore inlets 842 are formed in thewafer holder plate 832 and lead into the relatively enlargedannular mounting channel 843 and theannular recess 840. Quick-disconnect hoses 844 couple thefluid source 838 to theinlets 842 to provide a fluid thereto. Thevacuum port 841 is preferably attached to a vacuum/pressure pumping system 859 adapted to selectively supply a pressure or create a vacuum at a backside of thesubstrate 821. Thepumping system 859, shown in FIG. 12, comprises a pump 845, across-over valve 847, and a vacuum ejector 849 (commonly known as a venturi). One vacuum ejector that may be used to advantage in the present invention is available from SMC Pneumatics, Inc., of Indianapolis, Ind. The pump 845 may be a commercially available compressed gas source and is coupled to one end of a hose 851, the other end of the hose 851 being coupled to thevacuum port 841. The hose 851 is split into apressure line 853 and avacuum line 855 having thevacuum ejector 849 disposed therein. Fluid flow is controlled by thecross-over valve 847 which selectively switches communication with the pump 845 between thepressure line 853 and thevacuum line 855. Preferably, the cross-over valve has an OFF setting whereby fluid is restricted from flowing in either direction through hose 851. A shut-offvalve 861 disposed in hose 851 prevents fluid from flowing frompressure line 855 upstream through thevacuum ejector 849. The desired direction of fluid flow is indicated by arrows. - Persons skilled in the art will readily appreciate other arrangements which do not depart from the spirit and scope of the present invention. For example, where the
fluid source 838 is a gas supply it may be coupled to hose 851 thereby eliminating the need for a separate compressed gas supply, i.e., pump 845. Further, a separate gas supply and vacuum pump may supply the backside pressure and vacuum conditions. While it is preferable to allow for both a backside pressure as well as a backside vacuum, a simplified embodiment may comprise a pump capable of supplying only a backside vacuum. However, as will be explained below, deposition uniformity may be improved where a backside pressure is provided during processing. Therefore, an arrangement such as the one described above including a vacuum ejector and a cross-over valve is preferred. - Referring now to FIGS. 12A and 14, a substantially circular ring-shaped
manifold 846 is disposed in theannular recess 840. The manifold 846 comprises a mountingrail 852 disposed between aninner shoulder 848 and anouter shoulder 850. The mountingrail 852 is adapted to be at least partially inserted into theannular mounting channel 843. A plurality offluid outlets 854 formed in the manifold 846 provide communication between theinlets 842 and thebladder 836.Seals 837, such as O-rings, are disposed in theannular manifold channel 843 in alignment with theinlet 842 andoutlet 854 and secured by thewafer holder plate 832 to ensure an airtight seal. Conventional fasteners (not shown) such as screws may be used to secure the manifold 846 to thewafer holder plate 832 via cooperating threaded bores (not shown) formed in the manifold 846 and thewafer holder plate 832. - Referring now to FIG. 15, the
bladder 836 is shown, in section, as an elongated substantially semi-tubular piece of material having annular lip seals 856, or nodules, at each edge. In FIG. 12A, the lip seals 856 are shown disposed on theinner shoulder 848 and theouter shoulder 850. A portion of thebladder 836 is compressed against the walls of theannular recess 840 by the manifold 846 which has a width slightly less (e.g. a few millimeters) than theannular recess 840. Thus, the manifold 846, thebladder 836, and theannular recess 840 cooperate to form a fluid-tight seal. To prevent fluid loss, thebladder 836 is preferably comprised of some fluid impervious material such as silicon rubber or any comparable elastomer which is chemically inert with respect to the electrolyte and exhibits reliable elasticity. Where needed a compliant covering 857 may be disposed over thebladder 836, as shown in FIG. 15, and secured by means of an adhesive or thermal bonding. The covering 857 preferably comprises an elastomer such as Viton™, buna rubber or the like, which may be reinforced by Kevlar™, for example. In one embodiment, the covering 857 and thebladder 836 comprise the same material. The covering 857 has particular application where thebladder 836 is liable to rupturing. Alternatively, thebladder 836 thickness may simply be increased during its manufacturing to reduce the likelihood of puncture. - The precise number of
inlets 842 andoutlets 854 may be varied according to the particular application without deviating from the present invention. For example, while FIG. 12 shows two inlets with corresponding outlets, an alternative embodiment could employ a single fluid inlet which supplies fluid to thebladder 836. - In operation, the
substrate 821 is introduced into the container body 802 by securing it to the lower side of thewafer holder plate 832. This is accomplished by engaging the pumping system 159 to evacuate the space between thesubstrate 821 and thewafer holder plate 832 viaport 841 thereby creating a vacuum condition. Thebladder 836 is then inflated by supplying a fluid such as air or water from thefluid source 838 to theinlets 842. The fluid is delivered into thebladder 836 via themanifold outlets 854, thereby pressing thesubstrate 821 uniformly against the contacts of thecathode contact ring 466. The electroplating process is then carried out. An electrolyte is then pumped into theprocess kit 420 toward thesubstrate 821 to contact the exposedsubstrate plating surface 820. The power supply provides a negative bias to thesubstrate plating surface 820 via thecathode contact ring 466. As the electrolyte is flowed across thesubstrate plating surface 820, ions in the electrolytic solution are attracted to thesurface 820 and deposit on thesurface 820 to form the desired film. - Because of its flexibility, the
bladder 836 deforms to accommodate the asperities of the substrate backside and contacts of thecathode contact ring 466 thereby mitigating misalignment with the conductingcathode contact ring 466. Thecompliant bladder 836 prevents the electrolyte from contaminating the backside of thesubstrate 821 by establishing a fluid tight seal at a perimeter portion of a backside of thesubstrate 821. Once inflated, a uniform pressure is delivered downward toward thecathode contact ring 466 to achieve substantially equal force at all points where thesubstrate 821 andcathode contact ring 466 interface. The force can be varied as a function of the pressure supplied by thefluid source 838. Further, the effectiveness of the bladder assembly 470 is not dependent on the configuration of thecathode contact ring 466. For example, while FIG. 12 shows a pin configuration having a plurality of discrete contact points, thecathode contact ring 466 may also be a continuous surface. - Because the force delivered to the
substrate 821 by thebladder 836 is variable, adjustments can be made to the current flow supplied by thecontact ring 466. As described above, an oxide layer may form on thecathode contact ring 466 and act to restrict current flow. However, increasing the pressure of thebladder 836 may counteract the current flow restriction due to oxidation. As the pressure is increased, the malleable oxide layer is compromised and superior contact between thecathode contact ring 466 and thesubstrate 821 results. The effectiveness of thebladder 836 in this capacity may be further improved by altering the geometry of thecathode contact ring 466. For example, a knife-edge geometry is likely to penetrate the oxide layer more easily than a dull rounded edge or flat edge. - Additionally, the fluid tight seal provided by the
inflated bladder 836 allows the pump 845 to maintain a backside vacuum or pressure either selectively or continuously, before, during, and after processing. Generally, however, the pump 845 is run to maintain a vacuum only during the transfer of substrates to and from theelectroplating process cell 400 because it has been found that thebladder 836 is capable of maintaining the backside vacuum condition during processing without continuous pumping. Thus, while inflating thebladder 836, as described above, the backside vacuum condition is simultaneously relieved by disengaging thepumping system 859, e.g., by selecting an OFF position on thecross-over valve 847. Disengaging thepumping system 859 may be abrupt or comprise a gradual process whereby the vacuum condition is ramped down. Ramping allows for a controlled exchange between the inflatingbladder 836 and the simultaneously decreasing backside vacuum condition. This exchange may be controlled manually or by computer. - As described above, continuous backside vacuum pumping while the
bladder 836 is inflated is not needed and may actually cause thesubstrate 820 to buckle or warp leading to undesirable deposition results. It may, however, be desirable to provide a backside pressure to thesubstrate 820 in order to cause a “bowing” effect of the substrate to be processed. The inventors of the present invention have discovered that bowing results in superior deposition. Thus,pumping system 859 is capable of selectively providing a vacuum or pressure condition to the substrate backside. For a 200 mm wafer a backside pressure up to 5 psi is preferable to bow the substrate. Because substrates typically exhibit some measure of pliability, a backside pressure causes the substrate to bow or assume a convex shape relative to the upward flow of the electrolyte. The degree of bowing is variable according to the pressure supplied by pumpingsystem 859. - Those skilled in the art will readily recognize other embodiments which are contemplated by the present invention. For example, while FIG. 12A shows a
preferred bladder 836 having a surface area sufficient to cover a relatively small perimeter portion of the substrate backside at a diameter substantially equal to thecathode contact ring 466, the bladder assembly 470 may be geometrically varied. Thus, the bladder assembly may be constructed using more fluid impervious material to cover an increased surface area of thesubstrate 821. - Referring back to FIG. 6, a cross sectional view of an
electroplating process cell 400, thewafer holder assembly 450 is positioned above theprocess kit 420. Theprocess kit 420 generally comprises abowl 430, acontainer body 472, ananode assembly 474 and afilter 476. Preferably, theanode assembly 474 is disposed below thecontainer body 472 and attached to a lower portion of thecontainer body 472, and thefilter 476 is disposed between theanode assembly 474 and thecontainer body 472. Thecontainer body 472 is preferably a cylindrical body comprised of an electrically insulative material, such as ceramics, plastics, plexiglass (acrylic), lexane, PVC, CPVC, and PVDF. Alternatively, thecontainer body 472 can be made from a metal, such as stainless steel, nickel and titanium, which is coated with an insulating layer, such as teflon, PVDF, plastic, rubber and other combinations of materials that do not dissolve in the electrolyte and can be electrically insulated from the electrodes (i.e., the anode and cathode of the electroplating system). Thecontainer body 472 is preferably sized and adapted to conform to the wafer plating surface and the shape of the of a wafer being processed through the system, typically circular or rectangular in shape. One preferred embodiment of thecontainer body 472 comprises a cylindrical ceramic tube having an inner diameter that has about the same dimension as or slightly larger than the wafer diameter. The inventors have discovered that the rotational movement typically required in typical electroplating systems is not required to achieve uniform plating results when the size of the container body conforms to about the size of the wafer plating surface. - An upper portion of the
container body 472 extends radially outwardly to form anannular weir 478. Theweir 478 extends over theinner wall 446 of theelectrolyte collector 440 and allows the electrolyte to flow into theelectrolyte collector 440. The upper surface of theweir 478 preferably matches the lower surface of thecathode contact ring 466. Preferably, the upper surface of theweir 478 includes an inner annularflat portion 480, a middleinclined portion 482 and an outer declinedportion 484. When a wafer is positioned in the processing position, the wafer plating surface is positioned above the cylindrical opening of thecontainer body 472, and a gap for electrolyte flow is formed between the lower surface of thecathode contact ring 466 and the upper surface of theweir 478. The lower surface of thecathode contact ring 466 is disposed above the innerflat portion 480 and the middle inclined portion of theweir 478. The outer declinedportion 484 is sloped downwardly to facilitate flow of the electrolyte into theelectrolyte collector 440. - A lower portion of the
container body 472 extends radially outwardly to form a lowerannular flange 486 for securing thecontainer body 472 to thebowl 430. The outer dimension (i.e., circumference) of theannular flange 486 is smaller than the dimensions of theopening 444 and the inner circumference of theelectrolyte collector 440 to allow removal and replacement of theprocess kit 420 from theelectroplating process cell 400. Preferably, a plurality ofbolts 488 are fixedly disposed on theannular flange 486 and extend downwardly through matching bolt holes on thebowl 430. A plurality ofremovable fastener nuts 490 secure theprocess kit 420 onto thebowl 430. Aseal 487, such as an elastomer O-ring, is disposed betweencontainer body 472 and thebowl 430 radially inwardly from thebolts 488 to prevent leaks from theprocess kit 420. The nuts/bolts combination facilitates fast and easy removal and replacement of the components of theprocess kit 420 during maintenance. - Preferably, the
filter 476 is attached to and completely covers the lower opening of thecontainer body 472, and theanode assembly 474 is disposed below thefilter 476. Aspacer 492 is disposed between thefilter 476 and theanode assembly 474. Preferably, thefilter 476, thespacer 492, and theanode assembly 474 are fastened to a lower surface of thecontainer body 472 using removable fasteners, such as screws and/or bolts. Alternatively, thefilter 476, thespacer 492, and theanode assembly 474 are removably secured to thebowl 430. - The
anode assembly 474 preferably comprises a consumable anode that serves as a metal source in the electrolyte. Alternatively, theanode assembly 474 comprises a non-consumable anode, and the metal to be electroplated is supplied within the electrolyte from the electrolyte replenishing system 600. As shown in FIG. 6, theanode assembly 474 is a self-enclosed module having aporous anode enclosure 494 preferably made of the same metal as the metal to be electroplated, such as copper. Alternatively, theanode enclosure 494 is made of porous materials, such as ceramics or polymeric membranes. Asoluble metal 496, such as high purity copper for electro-chemical deposition of copper, is disposed within theanode enclosure 494. Thesoluble metal 496 preferably comprises metal particles, wires or a perforated sheet. Theporous anode enclosure 494 also acts as a filter that keeps the particulates generated by the dissolving metal within theanode enclosure 494. As compared to a non-consumable anode, the consumable (i.e., soluble) anode provides gas-generation-free electrolyte and minimizes the need to constantly replenish the metal in the electrolyte. - An
anode electrode contact 498 is inserted into theanode enclosure 494 to provide electrical connection to thesoluble metal 496 from a power supply. Preferably, theanode electrode contact 498 is made from a conductive material that is insoluble in the electrolyte, such as titanium, platinum and platinum-coated stainless steel. Theanode electrode contact 498 extends through thebowl 430 and is connected to an electrical power supply. Preferably, the anodeelectrical contact 498 includes a threadedportion 497 for afastener nut 499 to secure the anodeelectrical contact 498 to thebowl 430, and aseal 495, such as a elastomer washer, is disposed between thefastener nut 499 and thebowl 430 to prevent leaks from theprocess kit 420. - The
bowl 430 generally comprises acylindrical portion 502 and abottom portion 504. An upperannular flange 506 extends radially outwardly from the top of thecylindrical portion 502. The upperannular flange 506 includes a plurality ofholes 508 that matches the number ofbolts 488 from the lowerannular flange 486 of thecontainer body 472. To secure the upperannular flange 506 of thebowl 430 and the lowerannular flange 486 of thecontainer body 472, thebolts 488 are inserted through theholes 508, and thefastener nuts 490 are fastened onto thebolts 488. Preferably, the outer dimension (i.e., circumference) of the upperannular flange 506 is about the same as the outer dimension (i.e., circumference) of the lowerannular flange 486. Preferably, the lower surface of the upperannular flange 506 of thebowl 430 rests on a support flange of themainframe 214 when theprocess kit 420 is positioned on themainframe 214. - The inner circumference of the
cylindrical portion 502 accommodates theanode assembly 474 and thefilter 476. Preferably, the outer dimensions of thefilter 476 and theanode assembly 474 are slightly smaller than the inner dimension of thecylindrical portion 502 to force a substantial portion of the electrolyte to flow through theanode assembly 474 first before flowing through thefilter 476. Thebottom portion 504 of thebowl 430 includes anelectrolyte inlet 510 that connects to an electrolyte supply line from theelectrolyte replenishing system 220. Preferably, theanode assembly 474 is disposed about a middle portion of thecylindrical portion 502 of thebowl 430 to provide a gap for electrolyte flow between theanode assembly 474 and theelectrolyte inlet 510 on thebottom portion 504. - The
electrolyte inlet 510 and the electrolyte supply line are preferably connected by a releasable connector that facilitates easy removal and replacement of theprocess kit 420. When theprocess kit 420 needs maintenance, the electrolyte is drained from theprocess kit 420, and the electrolyte flow in the electrolyte supply line is discontinued and drained. The connector for the electrolyte supply line is released from theelectrolyte inlet 510, and the electrical connection to theanode assembly 474 is also disconnected. Thehead assembly 410 is raised or rotated to provide clearance for removal of theprocess kit 420. Theprocess kit 420 is then removed from themainframe 214, and a new or reconditioned process kit is replaced into themainframe 214. - Alternatively, the
bowl 430 can be secured onto the support flange of themainframe 214, and thecontainer body 472 along with the anode and the filter are removed for maintenance. In this case, the nuts securing theanode assembly 474 and thecontainer body 472 to thebowl 430 are removed to facilitate removal of theanode assembly 474 and thecontainer body 472. New or reconditionedanode assembly 474 andcontainer body 472 are then replaced into themainframe 214 and secured to thebowl 430. - FIG. 16 is a schematic diagram of an electrolyte replenishing system600. The electrolyte replenishing system 600 generally comprises a
main electrolyte tank 602, one ormore filter tanks 604, one ormore source tanks 606, one or more fluid pumps 608. The electrolyte replenishing system 600 is connected to acontroller 610 for controlling the composition of the electrolyte and the operation of the electrolyte replenishing system 600. Preferably, thecontroller 610 is independently operable but integrated with thecontrol system 222 of theelectroplating system platform 200. - The electrolyte replenishing system600 provides the electrolyte to the electroplating process cells for the electroplating process. The electrolyte replenishing system 600 as shown in FIG. 16 is the same as the
electrolyte replenishing system 220 as shown in FIGS. 2 and 3. Themain electrolyte tank 602 includes anelectrolyte supply line 612 that is connected to each of the electroplating process cells through one or more fluid pumps 608. The electrolyte replenishing system 600 includes a plurality of source tanks that are connected to themain tank 602 to supply the chemicals needed for composing the electrolyte. The source tanks typically include a deionized water source tank and copper sulfate source tank for composing the electrolyte. The deionized water source tank preferably also provides deionized water to the system for cleaning the system during maintenance. - The electrolyte replenishing system600 also includes a plurality of
filter tanks 604 connected to themain tank 602. Preferably, anelectrolyte return line 614 is connected between each of the process cells and one ormore filter tanks 604. Thefilter tanks 604 remove the undesired contents in the used electrolyte before returning the electrolyte to themain tank 602 for re-use. Themain tank 602 is preferably connected to one or more of thefilter tanks 604 to facilitate re-circulation and filtration of the electrolyte in themain tank 602 through thefilter tanks 604. By re-circulating the electrolyte from themain tank 602 through thefilter tanks 604, the undesired contents in the electrolyte are continuously removed by thefilter tanks 604. - Preferably, the electrolyte replenishing system600 includes a
chemical analyzer 616 that provides real time chemical analysis of the chemical composition of the electrolyte. The information from thechemical analyzer 616 is inputted to thecontroller 610 which uses the information to provide real time adjustment of the source chemical replenishment rates to maintain constant chemical composition of the electrolyte throughout the electroplating process. Additionally, the chemical analyzer preferably provides an analysis of organic and inorganic constituents of the electrolyte. - The electrolyte replenishing system600 preferably also includes one or more additional tanks for storage of chemicals for wafer cleaning system, such as the SRD station. The electrolyte replenishing system 600 also includes an
electrolyte waste drain 620 connected to an electrolytewaste disposal system 622 for safe disposal of used electrolytes, chemicals and other fluids used in the electroplating system. Preferably, the electroplating cells include a direct line connection to the electrolyte waste drain or the electrolyte waste disposal system to drain the electroplating cell without returning the electrolyte through the electrolyte replenishing system 600. The electrolyte replenishing system 600 preferably also includes a bleed off connection to bleed off excess electrolyte to the electrolyte waste drain. Optionally, the electrolyte replenishing system 600 includes connections to additional or external electrolyte processing system to provide additional electrolyte supplies to the electroplating system. Preferably, the electrolyte replenishing system 600 includes double-contained piping for hazardous material connections to provide safe transport of the chemicals throughout the system. The electrolyte replenishing system 600 preferably controls the temperature of the electrolyte through aheat exchanger 624 or a heater/chiller disposed in thermal connection with the main tank. Theheat exchanger 624 is connected to and operated by thecontroller 610. - FIG. 17 is a cross sectional view of a rapid thermal anneal chamber according to the invention. The rapid thermal anneal (RTA)
chamber 211 is preferably connected to theloading station 210, and substrates are transferred into and out of theRTA chamber 211 by the loadingstation transfer robot 228. The electroplating system, as shown in FIGS. 2 and 3, preferably comprises twoRTA chambers 211 disposed on opposing sides of theloading station 210, corresponding to the symmetric design of theloading station 210. Thermal anneal process chambers are generally well known in the art, and rapid thermal anneal chambers are typically utilized in substrate processing systems to enhance the properties of the deposited materials. The invention contemplates utilizing a variety of thermal anneal chamber designs, including hot plate designs and heat lamp designs, to enhance the electroplating results. One particular thermal anneal chamber useful for the present invention is the WxZ chamber available from Applied materials, Inc., located in Santa Clara, Calif. Although the invention is described using a hot plate rapid thermal anneal chamber, the invention contemplates application of other thermal anneal chambers as well. - The
RTA chamber 211 generally comprises anenclosure 902, aheater plate 904, aheater 907 and a plurality of substrate support pins 906. Theenclosure 902 includes abase 908, asidewall 910 and a top 912. Preferably, acold plate 913 is disposed below the top 912 of the enclosure. Alternatively, the cold plate is integrally formed as part of the top 912 of the enclosure. Preferably, areflector insulator dish 914 is disposed inside theenclosure 902 on thebase 908. Thereflector insulator dish 914 is typically made from a material such as quartz, alumina, or other material that can withstand high temperatures (i.e., greater than about 500° C.), and act as a thermal insulator between theheater 907 and theenclosure 902. Thedish 914 may also be coated with a reflective material, such as gold, to direct heat back to theheater plate 906. - The
heater plate 904 preferably has a large mass compared to the substrate being processed in the system and is preferably fabricated from a material such as silicon carbide, quartz, or other materials that do not react with any ambient gases in theRTA chamber 211 or with the substrate material. Theheater 907 typically comprises a resistive heating element or a conductive/radiant heat source and is disposed between theheated plate 906 and thereflector insulator dish 914. Theheater 907 is connected to apower source 916 which supplies the energy needed to heat theheater 907. Preferably, athermocouple 920 is disposed in aconduit 922, disposed through thebase 908 anddish 914, and extends into theheater plate 904. Thethermocouple 920 is connected to a controller (i.e., the system controller described below) and supplies temperature measurements to the controller. The controller then increases or decreases the heat supplied by theheater 907 according to the temperature measurements and the desired anneal temperature. - The
enclosure 902 preferably includes a coolingmember 918 disposed outside of theenclosure 902 in thermal contact with thesidewall 910 to cool theenclosure 902. Alternatively, one or more cooling channels (not shown) are formed within thesidewall 910 to control the temperature of theenclosure 902. Thecold plate 913 disposed on the inside surface of the top 912 cools a substrate that is positioned in close proximity to thecold plate 913. - The
RTA chamber 211 includes aslit valve 922 disposed on thesidewall 910 of theenclosure 902 for facilitating transfers of substrates into and out of the RTA chamber. Theslit valve 922 selectively seals anopening 924 on thesidewall 910 of the enclosure that communicates with theloading station 210. The loading station transfer robot 228 (see FIG. 2) transfers substrates into and out of the RTA chamber through theopening 924. - The substrate support pins906 preferably comprise distally tapered members constructed from quartz, aluminum oxide, silicon carbide, or other high temperature resistant materials. Each
substrate support pin 906 is disposed within atubular conduit 926, preferably made of a heat and oxidation resistant material, that extends through theheater plate 904. The substrate support pins 906 are connected to alift plate 928 for moving the substrate support pins 906 in a uniform manner. Thelift plate 928 is attached to an to anactuator 930, such as a stepper motor, through alift shaft 932 that moves thelift plate 928 to facilitate positioning of a substrate at various vertical positions within the RTA chamber. Thelift shaft 932 extends through thebase 908 of theenclosure 902 and is sealed by a sealingflange 934 disposed around the shaft. - To transfer a substrate into the
RTA chamber 211, theslit valve 922 is opened, and the loadingstation transfer robot 228 extends its robot blade having a substrate positioned thereon through theopening 924 into the RTA chamber. The robot blade of the loadingstation transfer robot 228 positions the substrate in the RTA chamber above theheater plate 904, and the substrate support pins 906 are extended upwards to lift the substrate above the robot blade. The robot blade then retracts out of the RTA chamber, and theslit valve 922 closes the opening. The substrate support pins 906 are then retracted to lower the substrate to a desired distance from theheater plate 904. Optionally, the substrate support pins 906 may retract fully to place the substrate in direct contact with the heater plate. - Preferably, a
gas inlet 936 is disposed through thesidewall 910 of theenclosure 902 to allow selected gas flow into theRTA chamber 211 during the anneal treatment process. Thegas inlet 936 is connected to agas source 938 through avalve 940 for controlling the flow of the gas into theRTA chamber 211. Agas outlet 942 is preferably disposed at a lower portion of thesidewall 910 of theenclosure 902 to exhaust the gases in the RTA chamber and is preferably connected to a relief/check valve 944 to prevent backstreaming of atmosphere from outside of the chamber. Optionally, thegas outlet 942 is connected to a vacuum pump (not shown) to exhaust the RTA chamber to a desired vacuum level during an anneal treatment. - According to the invention, a substrate is annealed in the
RTA chamber 211 after the substrate has been electroplated in the electroplating cell and cleaned in the SRD station. Preferably, theRTA chamber 211 is maintained at about atmospheric pressure, and the oxygen content inside theRTA chamber 211 is controlled to less than about 100 ppm during the anneal treatment process. Preferably, the ambient environment inside theRTA chamber 211 comprises nitrogen (N2) or a combination of nitrogen (N2) and less than about 4% hydrogen (H2), and the ambient gas flow into theRTA chamber 211 is maintained at greater than 20 liters/min to control the oxygen content to less than 100 ppm. The electroplated substrate is preferably annealed at a temperature between about 200° C. and about 450° C. for between about 30 seconds and 30 minutes, and more preferably, between about 250° C. and about 400° C. for between about 1 minute and 5 minutes. Rapid thermal anneal processing typically requires a temperature increase of at least 50° C. per second. To provide the required rate of temperature increase for the substrate during the anneal treatment, the heater plate is preferably maintained at between about 350° C. and about 450° C., and the substrate is preferably positioned at between about 0 mm (i.e., contacting the heater plate) and about 20 mm from the heater plate for the duration of the anneal treatment process. Preferably, acontrol system 222 controls the operation of theRTA chamber 211, including maintaining the desired ambient environment in the RTA chamber and the temperature of the heater plate. - After the anneal treatment process is completed, the substrate support pins906 lift the substrate to a position for transfer out of the
RTA chamber 211. Theslit valve 922 opens, and the robot blade of the loadingstation transfer robot 228 is extended into the RTA chamber and positioned below the substrate. The substrate support pins 906 retract to lower the substrate onto the robot blade, and the robot blade then retracts out of the RTA chamber. The loadingstation transfer robot 228 then transfers the processed substrate into thecassette 232 for removal out of the electroplating processing system. (see FIGS. 2 and 3). - Referring back to FIG. 2, the
electroplating system platform 200 includes acontrol system 222 that controls the functions of each component of the platform. Preferably, thecontrol system 222 is mounted above themainframe 214 and comprises a programmable microprocessor. The programmable microprocessor is typically programmed using a software designed specifically for controlling all components of theelectroplating system platform 200. Thecontrol system 222 also provides electrical power to the components of the system and includes acontrol panel 223 that allows an operator to monitor and operate theelectroplating system platform 200. Thecontrol panel 223, as shown in FIG. 2, is a stand-alone module that is connected to thecontrol system 222 through a cable and provides easy access to an operator. Generally, thecontrol system 222 coordinates the operations of theloading station 210, theRTA chamber 211, theSRD station 212, themainframe 214 and theprocessing stations 218. Additionally, thecontrol system 222 coordinates with the controller of the electrolyte replenishing system 600 to provide the electrolyte for the electroplating process. - The following is a description of a typical wafer electroplating process sequence through the
electroplating system platform 200 as shown in FIG. 2. A wafer cassette containing a plurality of wafers is loaded into the wafercassette receiving areas 224 in theloading station 210 of theelectroplating system platform 200. A loadingstation transfer robot 228 picks up a wafer from a wafer slot in the wafer cassette and places the wafer in thewafer orientor 230. Thewafer orientor 230 determines and orients the wafer to a desired orientation for processing through the system. The loadingstation transfer robot 228 then transfers the oriented wafer from thewafer orientor 230 and positions the wafer in one of the wafer slots in the wafer pass-throughcassette 238 in theSRD station 212. Themainframe transfer robot 242 picks up the wafer from the wafer pass-throughcassette 238 and positions the wafer for transfer by theflipper robot 248. Theflipper robot 248 rotates its robot blade below the wafer and picks up wafer from mainframe transfer robot blade. The vacuum suction gripper on the flipper robot blade secures the wafer on the flipper robot blade, and the flipper robot flips the wafer from a face up position to a face down position. Theflipper robot 248 rotates and positions the wafer face down in thewafer holder assembly 450. The wafer is positioned below thewafer holder 464 but above thecathode contact ring 466. Theflipper robot 248 then releases the wafer to position the wafer into thecathode contact ring 466. Thewafer holder 464 moves toward the wafer and the vacuum chuck secures the wafer on thewafer holder 464. The bladder assembly 470 on thewafer holder assembly 450 exerts pressure against the wafer backside to ensure electrical contact between the wafer plating surface and thecathode contact ring 466. - The
head assembly 452 is lowered to a processing position above theprocess kit 420. At this position the wafer is below the upper plane of theweir 478 and contacts the electrolyte contained in theprocess kit 420. The power supply is activated to supply electrical power (i.e., voltage and current) to the cathode and the anode to enable the electroplating process. The electrolyte is typically continually pumped into the process kit during the electroplating process. The electrical power supplied to the cathode and the anode and the flow of the electrolyte are controlled by thecontrol system 222 to achieve the desired electroplating results. - After the electroplating process is completed, the
head assembly 410 raises the wafer holder assembly and removes the wafer from the electrolyte. The vacuum chuck and the bladder assembly of the wafer holder release the wafer from the wafer holder, and the wafer holder is raised to allow the flipper robot blade to pick up the processed wafer from the cathode contact ring. The flipper robot rotates the flipper robot blade above the backside of the processed wafer in the cathode contact ring and picks up the wafer using the vacuum suction gripper on the flipper robot blade. The flipper robot rotates the flipper robot blade with the wafer out of the wafer holder assembly, flips the wafer from a face-down position to a face-up position, and positions the wafer on the mainframe transfer robot blade. The mainframe transfer robot then transfers and positions the processed wafer above theSRD module 236. The SRD wafer support lifts the wafer, and the mainframe transfer robot blade retracts away from theSRD module 236. The wafer is cleaned in the SRD module using deionized water or a combination of deionized water and a cleaning fluid as described in detail above. The wafer is then positioned for transfer out of the SRD module. The loadingstation transfer robot 228 picks up the wafer from theSRD module 236 and transfers the processed wafer into theRTA chamber 211 for an anneal treatment process to enhance the properties of the deposited materials. The annealed wafer is then transferred out of theRTA chamber 211 by theloading station robot 228 and placed back into the wafer cassette for removal from the electroplating system. The above-described sequence can be carried out for a plurality of wafers substantially simultaneously in theelectroplating system platform 200 of the present invention. Also, the electroplating system according to the invention can be adapted to provide multi-stack wafer processing. - While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims which follow.
Claims (9)
1. An electro-chemical deposition system, comprising:
a) a mainframe having a mainframe wafer transfer robot;
b) a loading station disposed in connection with the mainframe;
c) one or more processing cells disposed in connection with the mainframe;
d) an electrolyte supply fluidly connected to the one or more electrical processing cells;
e) a spin-rinse-dry (SRD) chamber disposed between the loading station and the mainframe; and
f) a thermal anneal chamber disposed adjacent the loading station.
2. The system of claim 1 wherein the thermal anneal chamber comprises a rapid thermal anneal chamber having a heater plate.
3. The system of claim 2 wherein the heater plate comprises an atmospheric pressure heater plate.
4. The system of claim 1 , further comprising:
e) a system controller adapted to control operations of one or more components of the electro-chemical deposition system.
5. The system of claim 4 , wherein the thermal anneal chamber further comprises a gas inlet adapted to introduce one or more gases into the thermal anneal chamber.
6. The system of claim 5 wherein the system controller controls the gas inlet to the chamber to provide a chamber environment having an oxygen content of less than 100 parts per million.
7. The system of claim 6 wherein the gas inlet is connected to a nitrogen gas source to introduce nitrogen into the chamber.
8. The system of claim 6 wherein the gas inlet is connected to a nitrogen gas source and a hydrogen gas source to introduce nitrogen and hydrogen into the chamber, wherein the hydrogen content is maintained at less than about 4%.
9. The system of claim 1 wherein the loading station comprises:
i) one or more wafer cassette receiving areas;
ii) one or more loading station wafer transfer robots for transferring a wafer between the loading station and the SRD station and between the loading station and the thermal anneal chamber; and
iii) a wafer orientor.
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US10/686,486 US20040079633A1 (en) | 2000-07-05 | 2003-10-15 | Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing |
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US60934700A | 2000-07-05 | 2000-07-05 | |
US10/686,486 US20040079633A1 (en) | 2000-07-05 | 2003-10-15 | Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing |
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US60934700A Continuation | 2000-07-05 | 2000-07-05 |
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US10/686,486 Abandoned US20040079633A1 (en) | 2000-07-05 | 2003-10-15 | Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20140284321A1 (en) * | 2013-03-21 | 2014-09-25 | Tokyo Electron Limited | Magnetic annealing apparatus |
RU2555272C2 (en) * | 2013-10-21 | 2015-07-10 | Федеральное государственное бюджетное учреждение науки Ордена Трудового Красного Знамени Институт химии силикатов им. И.В. Гребенщикова Российской академии наук (ИХС РАН) | Electrochemical installation to shape nanosized coating |
CN108346599A (en) * | 2017-01-24 | 2018-07-31 | Spts科技有限公司 | Method and apparatus and device method for maintaining for electrochemical treatments semiconductor base |
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US20190287854A1 (en) * | 2018-03-14 | 2019-09-19 | Raytheon Company | Stress compensation and relief in bonded wafers |
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Citations (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2026605A (en) * | 1933-01-09 | 1936-01-07 | Copperweld Steel Co | Method for working and treating metals |
US3649509A (en) * | 1969-07-08 | 1972-03-14 | Buckbee Mears Co | Electrodeposition systems |
US3727620A (en) * | 1970-03-18 | 1973-04-17 | Fluoroware Of California Inc | Rinsing and drying device |
US3770598A (en) * | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
US4092176A (en) * | 1975-12-11 | 1978-05-30 | Nippon Electric Co., Ltd. | Apparatus for washing semiconductor wafers |
US4110176A (en) * | 1975-03-11 | 1978-08-29 | Oxy Metal Industries Corporation | Electrodeposition of copper |
US4113492A (en) * | 1976-04-08 | 1978-09-12 | Fuji Photo Film Co., Ltd. | Spin coating process |
US4265943A (en) * | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4315059A (en) * | 1980-07-18 | 1982-02-09 | The United States Of America As Represented By The United States Department Of Energy | Molten salt lithium cells |
US4326940A (en) * | 1979-05-21 | 1982-04-27 | Rohco Incorporated | Automatic analyzer and control system for electroplating baths |
US4336114A (en) * | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
US4405416A (en) * | 1980-07-18 | 1983-09-20 | Raistrick Ian D | Molten salt lithium cells |
US4428815A (en) * | 1983-04-28 | 1984-01-31 | Western Electric Co., Inc. | Vacuum-type article holder and methods of supportively retaining articles |
US4435266A (en) * | 1981-10-01 | 1984-03-06 | Emi Limited | Electroplating arrangements |
US4489740A (en) * | 1982-12-27 | 1984-12-25 | General Signal Corporation | Disc cleaning machine |
US4510176A (en) * | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
US4518678A (en) * | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
US4519846A (en) * | 1984-03-08 | 1985-05-28 | Seiichiro Aigo | Process for washing and drying a semiconductor element |
US4568431A (en) * | 1984-11-13 | 1986-02-04 | Olin Corporation | Process for producing electroplated and/or treated metal foil |
US4693805A (en) * | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
US4786337A (en) * | 1988-03-25 | 1988-11-22 | Rockwell International Corporation | Method of treating aluminum-lithium alloys |
US4789445A (en) * | 1983-05-16 | 1988-12-06 | Asarco Incorporated | Method for the electrodeposition of metals |
US4816098A (en) * | 1987-07-16 | 1989-03-28 | Texas Instruments Incorporated | Apparatus for transferring workpieces |
US4816638A (en) * | 1987-02-20 | 1989-03-28 | Anelva Corporation | Vacuum processing apparatus |
US5039381A (en) * | 1989-05-25 | 1991-08-13 | Mullarkey Edward J | Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like |
US5055425A (en) * | 1989-06-01 | 1991-10-08 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5069760A (en) * | 1989-06-30 | 1991-12-03 | Yamaha Hatsudoki Kabushiki Kaisha | Apparatus and method for surface treatment of workpieces |
US5092975A (en) * | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
US5100516A (en) * | 1989-01-25 | 1992-03-31 | Yamaha Hatsudoki Kabushiki Kaisha | High volume workpiece handling and chemical treating system |
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5156731A (en) * | 1988-12-13 | 1992-10-20 | Sumitomo Metal Mining Co. Ltd. | Polyimide substrate and method of manufacturing a printed wiring board using the substrate |
US5162260A (en) * | 1989-06-01 | 1992-11-10 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5168886A (en) * | 1988-05-25 | 1992-12-08 | Semitool, Inc. | Single wafer processor |
US5222310A (en) * | 1990-05-18 | 1993-06-29 | Semitool, Inc. | Single wafer processor with a frame |
US5224504A (en) * | 1988-05-25 | 1993-07-06 | Semitool, Inc. | Single wafer processor |
US5230743A (en) * | 1988-05-25 | 1993-07-27 | Semitool, Inc. | Method for single wafer processing in which a semiconductor wafer is contacted with a fluid |
US5248384A (en) * | 1991-12-09 | 1993-09-28 | Taiwan Semiconductor Manufacturing Company | Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process |
US5252807A (en) * | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
US5256274A (en) * | 1990-08-01 | 1993-10-26 | Jaime Poris | Selective metal electrodeposition process |
US5259407A (en) * | 1990-06-15 | 1993-11-09 | Matrix Inc. | Surface treatment method and apparatus for a semiconductor wafer |
US5290361A (en) * | 1991-01-24 | 1994-03-01 | Wako Pure Chemical Industries, Ltd. | Surface treating cleaning method |
US5292393A (en) * | 1986-12-19 | 1994-03-08 | Applied Materials, Inc. | Multichamber integrated process system |
US5297910A (en) * | 1991-02-15 | 1994-03-29 | Tokyo Electron Limited | Transportation-transfer device for an object of treatment |
US5316974A (en) * | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US5324684A (en) * | 1992-02-25 | 1994-06-28 | Ag Processing Technologies, Inc. | Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure |
US5328589A (en) * | 1992-12-23 | 1994-07-12 | Enthone-Omi, Inc. | Functional fluid additives for acid copper electroplating baths |
US5349978A (en) * | 1992-06-04 | 1994-09-27 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning device for cleaning planar workpiece |
US5368711A (en) * | 1990-08-01 | 1994-11-29 | Poris; Jaime | Selective metal electrodeposition process and apparatus |
US5377708A (en) * | 1989-03-27 | 1995-01-03 | Semitool, Inc. | Multi-station semiconductor processor with volatilization |
US5377425A (en) * | 1991-05-24 | 1995-01-03 | Nikku Industry Co., Ltd. | Vacuum drying apparatus |
US5384284A (en) * | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
US5415890A (en) * | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5429733A (en) * | 1992-05-21 | 1995-07-04 | Electroplating Engineers Of Japan, Ltd. | Plating device for wafer |
US5431700A (en) * | 1994-03-30 | 1995-07-11 | Fsi International, Inc. | Vertical multi-process bake/chill apparatus |
US5442235A (en) * | 1993-12-23 | 1995-08-15 | Motorola Inc. | Semiconductor device having an improved metal interconnect structure |
US5447615A (en) * | 1994-02-02 | 1995-09-05 | Electroplating Engineers Of Japan Limited | Plating device for wafer |
US5449447A (en) * | 1990-10-08 | 1995-09-12 | Le Four Industriel Belge S.A. | Method and device for pickling and galvanizing |
US5510216A (en) * | 1993-08-25 | 1996-04-23 | Shipley Company Inc. | Selective metallization process |
US5516412A (en) * | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
US5527390A (en) * | 1993-03-19 | 1996-06-18 | Tokyo Electron Kabushiki | Treatment system including a plurality of treatment apparatus |
US5609688A (en) * | 1993-05-07 | 1997-03-11 | Fujitsu Ltd. | Apparatus for producing semiconductor device |
US5608943A (en) * | 1993-08-23 | 1997-03-11 | Tokyo Electron Limited | Apparatus for removing process liquid |
US5625170A (en) * | 1994-01-18 | 1997-04-29 | Nanometrics Incorporated | Precision weighing to monitor the thickness and uniformity of deposited or etched thin film |
US5639301A (en) * | 1994-06-17 | 1997-06-17 | Dainippon Screen Mfg. Co., Ltd. | Processing apparatus having parts for thermal and non-thermal treatment of substrates |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
US5664337A (en) * | 1996-03-26 | 1997-09-09 | Semitool, Inc. | Automated semiconductor processing systems |
US5677244A (en) * | 1996-05-20 | 1997-10-14 | Motorola, Inc. | Method of alloying an interconnect structure with copper |
US5705223A (en) * | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
US5716207A (en) * | 1995-07-26 | 1998-02-10 | Hitachi Techno Engineering Co., Ltd. | Heating furnace |
US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5731678A (en) * | 1996-07-15 | 1998-03-24 | Semitool, Inc. | Processing head for semiconductor processing machines |
US5807469A (en) * | 1995-09-27 | 1998-09-15 | Intel Corporation | Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects |
US5830045A (en) * | 1995-08-21 | 1998-11-03 | Ebara Corporation | Polishing apparatus |
US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US5885134A (en) * | 1996-04-18 | 1999-03-23 | Ebara Corporation | Polishing apparatus |
US5972110A (en) * | 1996-09-06 | 1999-10-26 | Tokyo Electron Limited | Resist processing system |
US5980706A (en) * | 1996-07-15 | 1999-11-09 | Semitool, Inc. | Electrode semiconductor workpiece holder |
US5997712A (en) * | 1998-03-30 | 1999-12-07 | Cutek Research, Inc. | Copper replenishment technique for precision copper plating system |
US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
US6091498A (en) * | 1996-07-15 | 2000-07-18 | Semitool, Inc. | Semiconductor processing apparatus having lift and tilt mechanism |
US6123825A (en) * | 1998-12-02 | 2000-09-26 | International Business Machines Corporation | Electromigration-resistant copper microstructure and process of making |
US6136163A (en) * | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
US6151447A (en) * | 1993-01-21 | 2000-11-21 | Moore Technologies | Rapid thermal processing apparatus for processing semiconductor wafers |
US6155275A (en) * | 1997-09-11 | 2000-12-05 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing unit and substrate processing apparatus using the same |
US6213853B1 (en) * | 1997-09-10 | 2001-04-10 | Speedfam-Ipec Corporation | Integral machine for polishing, cleaning, rinsing and drying workpieces |
US6228768B1 (en) * | 1998-11-02 | 2001-05-08 | Advanced Micro Devices, Inc. | Storage-annealing plated CU interconnects |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6264752B1 (en) * | 1998-03-13 | 2001-07-24 | Gary L. Curtis | Reactor for processing a microelectronic workpiece |
US6267853B1 (en) * | 1999-07-09 | 2001-07-31 | Applied Materials, Inc. | Electro-chemical deposition system |
US6297154B1 (en) * | 1998-08-28 | 2001-10-02 | Agere System Guardian Corp. | Process for semiconductor device fabrication having copper interconnects |
US6471913B1 (en) * | 2000-02-09 | 2002-10-29 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature |
-
2003
- 2003-10-15 US US10/686,486 patent/US20040079633A1/en not_active Abandoned
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2026605A (en) * | 1933-01-09 | 1936-01-07 | Copperweld Steel Co | Method for working and treating metals |
US3649509A (en) * | 1969-07-08 | 1972-03-14 | Buckbee Mears Co | Electrodeposition systems |
US3727620A (en) * | 1970-03-18 | 1973-04-17 | Fluoroware Of California Inc | Rinsing and drying device |
US3770598A (en) * | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
US4110176A (en) * | 1975-03-11 | 1978-08-29 | Oxy Metal Industries Corporation | Electrodeposition of copper |
US4092176A (en) * | 1975-12-11 | 1978-05-30 | Nippon Electric Co., Ltd. | Apparatus for washing semiconductor wafers |
US4113492A (en) * | 1976-04-08 | 1978-09-12 | Fuji Photo Film Co., Ltd. | Spin coating process |
US4265943A (en) * | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4326940A (en) * | 1979-05-21 | 1982-04-27 | Rohco Incorporated | Automatic analyzer and control system for electroplating baths |
US4405416A (en) * | 1980-07-18 | 1983-09-20 | Raistrick Ian D | Molten salt lithium cells |
US4315059A (en) * | 1980-07-18 | 1982-02-09 | The United States Of America As Represented By The United States Department Of Energy | Molten salt lithium cells |
US4336114A (en) * | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
US4435266A (en) * | 1981-10-01 | 1984-03-06 | Emi Limited | Electroplating arrangements |
US4489740A (en) * | 1982-12-27 | 1984-12-25 | General Signal Corporation | Disc cleaning machine |
US4428815A (en) * | 1983-04-28 | 1984-01-31 | Western Electric Co., Inc. | Vacuum-type article holder and methods of supportively retaining articles |
US4789445A (en) * | 1983-05-16 | 1988-12-06 | Asarco Incorporated | Method for the electrodeposition of metals |
US4510176A (en) * | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
US4518678A (en) * | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
US4519846A (en) * | 1984-03-08 | 1985-05-28 | Seiichiro Aigo | Process for washing and drying a semiconductor element |
US4568431A (en) * | 1984-11-13 | 1986-02-04 | Olin Corporation | Process for producing electroplated and/or treated metal foil |
US4693805A (en) * | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
US5292393A (en) * | 1986-12-19 | 1994-03-08 | Applied Materials, Inc. | Multichamber integrated process system |
US4816638A (en) * | 1987-02-20 | 1989-03-28 | Anelva Corporation | Vacuum processing apparatus |
US4816098A (en) * | 1987-07-16 | 1989-03-28 | Texas Instruments Incorporated | Apparatus for transferring workpieces |
US4786337A (en) * | 1988-03-25 | 1988-11-22 | Rockwell International Corporation | Method of treating aluminum-lithium alloys |
US5230743A (en) * | 1988-05-25 | 1993-07-27 | Semitool, Inc. | Method for single wafer processing in which a semiconductor wafer is contacted with a fluid |
US5224504A (en) * | 1988-05-25 | 1993-07-06 | Semitool, Inc. | Single wafer processor |
US5168886A (en) * | 1988-05-25 | 1992-12-08 | Semitool, Inc. | Single wafer processor |
US5092975A (en) * | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
US5156731A (en) * | 1988-12-13 | 1992-10-20 | Sumitomo Metal Mining Co. Ltd. | Polyimide substrate and method of manufacturing a printed wiring board using the substrate |
US5316974A (en) * | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US5100516A (en) * | 1989-01-25 | 1992-03-31 | Yamaha Hatsudoki Kabushiki Kaisha | High volume workpiece handling and chemical treating system |
US5377708A (en) * | 1989-03-27 | 1995-01-03 | Semitool, Inc. | Multi-station semiconductor processor with volatilization |
US5039381A (en) * | 1989-05-25 | 1991-08-13 | Mullarkey Edward J | Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like |
US5162260A (en) * | 1989-06-01 | 1992-11-10 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5055425A (en) * | 1989-06-01 | 1991-10-08 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5069760A (en) * | 1989-06-30 | 1991-12-03 | Yamaha Hatsudoki Kabushiki Kaisha | Apparatus and method for surface treatment of workpieces |
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5222310A (en) * | 1990-05-18 | 1993-06-29 | Semitool, Inc. | Single wafer processor with a frame |
US5259407A (en) * | 1990-06-15 | 1993-11-09 | Matrix Inc. | Surface treatment method and apparatus for a semiconductor wafer |
US5252807A (en) * | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
US5256274A (en) * | 1990-08-01 | 1993-10-26 | Jaime Poris | Selective metal electrodeposition process |
US5368711A (en) * | 1990-08-01 | 1994-11-29 | Poris; Jaime | Selective metal electrodeposition process and apparatus |
US5449447A (en) * | 1990-10-08 | 1995-09-12 | Le Four Industriel Belge S.A. | Method and device for pickling and galvanizing |
US5290361A (en) * | 1991-01-24 | 1994-03-01 | Wako Pure Chemical Industries, Ltd. | Surface treating cleaning method |
US5297910A (en) * | 1991-02-15 | 1994-03-29 | Tokyo Electron Limited | Transportation-transfer device for an object of treatment |
US5377425A (en) * | 1991-05-24 | 1995-01-03 | Nikku Industry Co., Ltd. | Vacuum drying apparatus |
US5248384A (en) * | 1991-12-09 | 1993-09-28 | Taiwan Semiconductor Manufacturing Company | Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process |
US5324684A (en) * | 1992-02-25 | 1994-06-28 | Ag Processing Technologies, Inc. | Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure |
US5429733A (en) * | 1992-05-21 | 1995-07-04 | Electroplating Engineers Of Japan, Ltd. | Plating device for wafer |
US5349978A (en) * | 1992-06-04 | 1994-09-27 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning device for cleaning planar workpiece |
US5328589A (en) * | 1992-12-23 | 1994-07-12 | Enthone-Omi, Inc. | Functional fluid additives for acid copper electroplating baths |
US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US6151447A (en) * | 1993-01-21 | 2000-11-21 | Moore Technologies | Rapid thermal processing apparatus for processing semiconductor wafers |
US5527390A (en) * | 1993-03-19 | 1996-06-18 | Tokyo Electron Kabushiki | Treatment system including a plurality of treatment apparatus |
US5853486A (en) * | 1993-03-19 | 1998-12-29 | Tokyo Electron Kabushiki Kaisha | Treatment system and treatment apparatus with multi-stage carrier storage chambers |
US5609688A (en) * | 1993-05-07 | 1997-03-11 | Fujitsu Ltd. | Apparatus for producing semiconductor device |
US5608943A (en) * | 1993-08-23 | 1997-03-11 | Tokyo Electron Limited | Apparatus for removing process liquid |
US5510216A (en) * | 1993-08-25 | 1996-04-23 | Shipley Company Inc. | Selective metallization process |
US5384284A (en) * | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
US5442235A (en) * | 1993-12-23 | 1995-08-15 | Motorola Inc. | Semiconductor device having an improved metal interconnect structure |
US5527739A (en) * | 1993-12-23 | 1996-06-18 | Motorola, Inc. | Process for fabricating a semiconductor device having an improved metal interconnect structure |
US5415890A (en) * | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5625170A (en) * | 1994-01-18 | 1997-04-29 | Nanometrics Incorporated | Precision weighing to monitor the thickness and uniformity of deposited or etched thin film |
US5447615A (en) * | 1994-02-02 | 1995-09-05 | Electroplating Engineers Of Japan Limited | Plating device for wafer |
US5431700A (en) * | 1994-03-30 | 1995-07-11 | Fsi International, Inc. | Vertical multi-process bake/chill apparatus |
US5639301A (en) * | 1994-06-17 | 1997-06-17 | Dainippon Screen Mfg. Co., Ltd. | Processing apparatus having parts for thermal and non-thermal treatment of substrates |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
US5705223A (en) * | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
US5516412A (en) * | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
US5716207A (en) * | 1995-07-26 | 1998-02-10 | Hitachi Techno Engineering Co., Ltd. | Heating furnace |
US5830045A (en) * | 1995-08-21 | 1998-11-03 | Ebara Corporation | Polishing apparatus |
US5807469A (en) * | 1995-09-27 | 1998-09-15 | Intel Corporation | Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects |
US5664337A (en) * | 1996-03-26 | 1997-09-09 | Semitool, Inc. | Automated semiconductor processing systems |
US5885134A (en) * | 1996-04-18 | 1999-03-23 | Ebara Corporation | Polishing apparatus |
US5677244A (en) * | 1996-05-20 | 1997-10-14 | Motorola, Inc. | Method of alloying an interconnect structure with copper |
US6091498A (en) * | 1996-07-15 | 2000-07-18 | Semitool, Inc. | Semiconductor processing apparatus having lift and tilt mechanism |
US5980706A (en) * | 1996-07-15 | 1999-11-09 | Semitool, Inc. | Electrode semiconductor workpiece holder |
US5731678A (en) * | 1996-07-15 | 1998-03-24 | Semitool, Inc. | Processing head for semiconductor processing machines |
US5972110A (en) * | 1996-09-06 | 1999-10-26 | Tokyo Electron Limited | Resist processing system |
US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US6213853B1 (en) * | 1997-09-10 | 2001-04-10 | Speedfam-Ipec Corporation | Integral machine for polishing, cleaning, rinsing and drying workpieces |
US6155275A (en) * | 1997-09-11 | 2000-12-05 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing unit and substrate processing apparatus using the same |
US6264752B1 (en) * | 1998-03-13 | 2001-07-24 | Gary L. Curtis | Reactor for processing a microelectronic workpiece |
US5997712A (en) * | 1998-03-30 | 1999-12-07 | Cutek Research, Inc. | Copper replenishment technique for precision copper plating system |
US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
US6297154B1 (en) * | 1998-08-28 | 2001-10-02 | Agere System Guardian Corp. | Process for semiconductor device fabrication having copper interconnects |
US6228768B1 (en) * | 1998-11-02 | 2001-05-08 | Advanced Micro Devices, Inc. | Storage-annealing plated CU interconnects |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US20020029961A1 (en) * | 1998-11-30 | 2002-03-14 | Applied Materials, Inc. | Electro-chemical deposition system |
US6635157B2 (en) * | 1998-11-30 | 2003-10-21 | Applied Materials, Inc. | Electro-chemical deposition system |
US20040084301A1 (en) * | 1998-11-30 | 2004-05-06 | Applied Materials, Inc. | Electro-chemical deposition system |
US6123825A (en) * | 1998-12-02 | 2000-09-26 | International Business Machines Corporation | Electromigration-resistant copper microstructure and process of making |
US6136163A (en) * | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
US6267853B1 (en) * | 1999-07-09 | 2001-07-31 | Applied Materials, Inc. | Electro-chemical deposition system |
US6471913B1 (en) * | 2000-02-09 | 2002-10-29 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040099112A1 (en) * | 2002-02-15 | 2004-05-27 | Naoki Ohmiya | Plate-like carrying mechanism and dicing device with carrying mechanism |
US20080105201A1 (en) * | 2006-11-03 | 2008-05-08 | Applied Materials, Inc. | Substrate support components having quartz contact tips |
WO2008057428A1 (en) * | 2006-11-03 | 2008-05-15 | Applied Materials, Inc. | Substrate support components having quartz contact tips |
US20140284321A1 (en) * | 2013-03-21 | 2014-09-25 | Tokyo Electron Limited | Magnetic annealing apparatus |
US10297481B2 (en) * | 2013-03-21 | 2019-05-21 | Tokyo Electron Limited | Magnetic annealing apparatus |
RU2555272C2 (en) * | 2013-10-21 | 2015-07-10 | Федеральное государственное бюджетное учреждение науки Ордена Трудового Красного Знамени Институт химии силикатов им. И.В. Гребенщикова Российской академии наук (ИХС РАН) | Electrochemical installation to shape nanosized coating |
US10186441B2 (en) * | 2014-09-17 | 2019-01-22 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
CN108346599A (en) * | 2017-01-24 | 2018-07-31 | Spts科技有限公司 | Method and apparatus and device method for maintaining for electrochemical treatments semiconductor base |
US11643744B2 (en) | 2017-01-24 | 2023-05-09 | Spts Technologies Limited | Apparatus for electrochemically processing semiconductor substrates |
US20190287854A1 (en) * | 2018-03-14 | 2019-09-19 | Raytheon Company | Stress compensation and relief in bonded wafers |
US10847419B2 (en) * | 2018-03-14 | 2020-11-24 | Raytheon Company | Stress compensation and relief in bonded wafers |
US11686208B2 (en) | 2020-02-06 | 2023-06-27 | Rolls-Royce Corporation | Abrasive coating for high-temperature mechanical systems |
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