US20030205828A9 - Circuit substrates, semiconductor packages, and ball grid arrays - Google Patents
Circuit substrates, semiconductor packages, and ball grid arrays Download PDFInfo
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- US20030205828A9 US20030205828A9 US09/827,017 US82701701A US2003205828A9 US 20030205828 A9 US20030205828 A9 US 20030205828A9 US 82701701 A US82701701 A US 82701701A US 2003205828 A9 US2003205828 A9 US 2003205828A9
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- soldermask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- This invention relates to semiconductor packaging processes, to circuit substrates, to semiconductor packages, and to ball grid arrays.
- Integrated circuitry chips are typically formed into packages, with the packages then being mounted or otherwise connected to other substrates and devices.
- One exemplary package mounts a semiconductor chip to another circuit substrate, for example a printed circuit board.
- the printed circuit board is typically fabricated to have a plurality of conductive traces formed thereon in desired patterns.
- An insulative layer referred to as a soldermask is then typically formed on the circuit substrate. Such layers are typically patterned to provide openings to locations on the circuit traces therebeneath.
- the soldermask typically prevents solder bridging on the circuit side of the assembly.
- the semiconductor chip is typically mounted to the circuit substrate by being adhered to the soldermask with a die attach adhesive. Conductive wire or other bonding is then conducted to connect the circuitry of the chip with the circuitry of the substrate.
- an insulative encapsulant material is provided to one side of the substrate over the semiconductor chip and soldermask.
- Such can be formed by a transfer molding process whereby a mold having a void is placed against the circuit substrate and an encapsulant caused to flow therein. The mold is ultimately removed and the encapsulant is allowed to cure.
- ball grid arrays Such can be fabricated as described above and additionally include conductive traces and a soldermask received on the opposing side of the circuit substrate from which the semiconductor die or chip is mounted. Openings are provided in the soldermask on the opposing side to desired locations of the opposing side circuit traces. An array of solder balls are mounted through the openings to surfaces of the conductive traces. The solder ball array serves to provide an electrical connection for the package with another substrate or device.
- soldermasks used today comprise a polymeric material that is applied to the outer surfaces of the substrate to, among other things, protect the circuitry, define particular features (for example, solder ball pads), define plated areas and control solder wicking during the reflow of solders.
- Typical soldermask materials used today are relatively soft with low mechanical strength.
- soldermask materials are used to cover all areas of a ball grid array substrate that are not specifically open to reveal some part of the underlying circuit.
- the soldermask is typically used to protect the circuit traces from the clamping forces applied by the mold body and to form a level surface of the ball grid array substrate so that the mold body can form a good seal during encapsulation.
- clamping forces applied by the mold body to the ball grid array substrate can be quite high. In some cases, these forces can be in excess of four tons on a single ball grid array substrate strip. Because of these high clamping forces on the relatively soft character of the soldermask, high shear forces are induced in the soldermask.
- a transfer mold semiconductor packaging process includes providing a circuit substrate having a semiconductor chip mounted to a side thereof.
- the circuit substrate has a soldermask on the side.
- the soldermask includes an elongated outer peripheral trench.
- a transfer mold is positioned to cover at least a portion of the circuit substrate having the chip mounted thereto.
- the transfer mold has a void within which the semiconductor chip is received.
- the void has a perimeter.
- the transfer mold is positioned such that at least a portion of the void perimeter is aligned over at least a portion of the soldermask peripheral trench.
- Encapsulant is flowed into the mold void over the semiconductor chip and to within the soldermask trench. After the flowing, the encapsulant is cured into a solidified mass.
- a circuit substrate includes a substrate having opposing sides. At least one of the sides is configured for transfer mold packaging and has conductive traces formed thereon.
- a soldermask is received on the one side, and has a plurality of openings formed therethrough to locations on the conductive traces.
- the soldermask includes a peripheral elongated trench therein positioned on the one side to align with at least a portion of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging of the one side.
- the invention includes a semiconductor package. In one implementation, the invention includes a ball grid array.
- FIG. 1 is a top diagrammatic partial view of an exemplary circuit substrate showing aspects of a soldermask pattern in accordance with an aspect of the invention.
- FIG. 2 is a view of the FIG. 1 substrate, also showing underlying circuit traces which are not shown in FIG. 1 for clarity.
- FIG. 3 is an enlarged diagrammatic sectional view of a portion of the FIGS. 1 and 2 substrate at one point in a transfer mold process in accordance with an aspect of the invention.
- FIG. 4 is a diagrammatic sectional view of the FIG. 3 device at a processing step subsequent to that shown by FIG. 3.
- FIG. 5 is a diagrammatic sectional view of the FIG. 3 device at a processing step subsequent to that shown by FIG. 4.
- FIG. 6 is a diagrammatic sectional view of the FIG. 3 device at a processing step subsequent to that shown by FIG. 5.
- FIG. 7 is a diagrammatic top view of an alternate embodiment peripheral elongated trench to that depicted in FIG. 1.
- FIG. 8 is a diagrammatic top view of another alternate embodiment peripheral elongated trench to that depicted in FIG. 1.
- FIG. 7 is a diagrammatic top view of still another alternate embodiment peripheral elongated trench to that depicted in FIG. 1.
- a circuit substrate is indicated generally with reference numeral 10 .
- Such comprises a substrate 12 , for example conventional or yet-to-be-developed printed circuit board or other rigid or flexible material.
- FIGS. 1 and 2 show substrate 12 in the form of an elongated strip of material yet to be singulated.
- Outlying line 14 shows in the preferred described embodiment the resultant singulated outline of what will be the completed package upon singulation from the strip.
- FIG. 1 effectively diagrammatically shows the mask openings for the soldermask layer, to be described subsequently.
- FIG. 2 shows the effective openings from the soldermask within the singulated outline 14 and, as well, shows exemplary circuit traces.
- Substrate 12 comprises opposing sides 16 and 18 , at least one of which has conductive traces formed thereon.
- the described preferred embodiment is in connection with fabrication of a ball grid array package, and with conductive traces being formed on each of sides 16 and 18 .
- FIGS. 2 and 3 depict exemplary conductive traces 20 formed on substrate side 16 , with FIG. 3 depicting exemplary circuit traces 22 formed on substrate side 18 .
- substrate side 16 is configured for transfer mold packaging, for example in the exemplary method as described below.
- a soldermask 25 is received on substrate side 16 and a soldermask 27 is received on substrate side 18 .
- Soldermask 25 has a plurality of openings 28 formed therethrough to locations on conductive traces 20 .
- Soldermask 27 on substrate side 18 has various openings 30 formed therethrough to various locations on conductive traces 22 .
- Soldermask 25 also comprises a peripheral elongated trench 35 therein.
- peripheral elongated trench 35 extends entirely through soldermask 25 to expose substrate side 16 therebeneath.
- peripheral elongated trench 35 is continuous about a periphery defined by the radial outermost portions of elongated trench 35 .
- peripheral elongated trench 35 includes some straight linear segment, more preferably at least four straight linear segments, and most preferably at least eight straight linear segments. Eight straight linear segments 36 are shown in the exemplary embodiment. Such segments are preferably interconnected as shown, such that the peripheral elongated trench 35 is continuous (no breaks) about the periphery defined thereby.
- FIG. 7, FIG. 8 and FIG. 9 depict respective alternate embodiments 35 a , 35 b and 35 c which include discontinuous and curved segments.
- Peripheral elongated trench 35 is positioned on substrate side 16 to align with at least a portion of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging of substrate side 16 , as will be further described.
- a semiconductor chip 40 is adhered (for example with a die attach adhesive 17 ) to substrate side 16 , with soldermask 25 in the preferred embodiment being received between chip 40 and substrate 12 .
- An exemplary bond wire 42 (FIG. 3) is shown interconnecting a portion of the circuitry on chip 40 with a location on circuit trace 20 through a soldermask opening 28 .
- a transfer mold 50 is positioned to cover at least a portion of circuit substrate 12 having semiconductor chip 40 mounted thereto.
- Transfer mold 50 includes a mold body 52 having a void 54 within which semiconductor chip 40 is received.
- Void 54 includes a perimeter 56 .
- Transfer mold 50 is positioned to align at least a portion of void perimeter 56 over at least a portion of soldermask peripheral trench 35 .
- the soldermask peripheral trench and perimeter are configured such that a positioning can occur, as shown, which aligns all of void perimeter 56 over all of soldermask peripheral trench 35 .
- the preferred positioning and alignment positions mold void perimeter 56 to substantially centrally align relative to the lateral confines of elongated soldermask trench 35 .
- an encapsulant 60 is flowed into mold void 54 over semiconductor chip 40 and to within soldermask trench 35 .
- insulative encapsulant 60 fills soldermask trench 35 .
- the insulative encapsulant is allowed to cure into a solidified mass.
- FIG. 6 illustrates transfer mold 50 having been removed, and a plurality of solder balls 62 having been mounted through soldermask openings 30 to conductive traces 22 on substrate side 18 .
- FIG. 6 illustrates an exemplary preferred semiconductor package 65 in the form of a ball grid array.
- the elongated trench provides stress relief at the mold void perimeter such that cracking of present soldermask materials at this location can be advantageously avoided.
- present encapsulant materials tend to better adhere to present circuit board materials than to present soldermask materials. Accordingly, the invention might provide better overall adhesion of the encapsulant to the underlying substrate due to added contact area of the encapsulant to board material by provision of the preferred soldermask trench to the substrate.
- exemplary existing circuit board materials are bismalimide triazine or FR-4; exemplary encapsulant material includes silica filled Novolac or phenolic resin epoxy molding compound; and exemplary soldermask materials are liquid or dry film photoimageable polyimide such as Taiyo PSR 4000 available from Taiyo Ink Mfg. Co. of Tokyo, Japan.
Abstract
In one implementation, a circuit substrate includes a substrate having opposing sides. At least one of the sides is configured for transfer mold packaging and has conductive traces formed thereon. A soldermask is received on the one side, and has a plurality of openings formed therethrough to locations on the conductive traces. The soldermask includes a peripheral elongated trench therein positioned on the one side to align with at least a portion of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging of the one side. In one implementation, the invention includes a transfer mold semiconductor packaging process. In one implementation, the invention includes a semiconductor package. In one implementation, the invention includes a ball grid array.
Description
- This invention relates to semiconductor packaging processes, to circuit substrates, to semiconductor packages, and to ball grid arrays.
- Integrated circuitry chips are typically formed into packages, with the packages then being mounted or otherwise connected to other substrates and devices. Many different packaging methods and devices exist for integrated circuitry in the form of a semiconductor chip. One exemplary package mounts a semiconductor chip to another circuit substrate, for example a printed circuit board. The printed circuit board is typically fabricated to have a plurality of conductive traces formed thereon in desired patterns. An insulative layer referred to as a soldermask is then typically formed on the circuit substrate. Such layers are typically patterned to provide openings to locations on the circuit traces therebeneath. The soldermask typically prevents solder bridging on the circuit side of the assembly. The semiconductor chip is typically mounted to the circuit substrate by being adhered to the soldermask with a die attach adhesive. Conductive wire or other bonding is then conducted to connect the circuitry of the chip with the circuitry of the substrate.
- Thereafter, in one exemplary packaging process, an insulative encapsulant material is provided to one side of the substrate over the semiconductor chip and soldermask. Such can be formed by a transfer molding process whereby a mold having a void is placed against the circuit substrate and an encapsulant caused to flow therein. The mold is ultimately removed and the encapsulant is allowed to cure.
- One type of semiconductor packaging finding increasing use are ball grid arrays. Such can be fabricated as described above and additionally include conductive traces and a soldermask received on the opposing side of the circuit substrate from which the semiconductor die or chip is mounted. Openings are provided in the soldermask on the opposing side to desired locations of the opposing side circuit traces. An array of solder balls are mounted through the openings to surfaces of the conductive traces. The solder ball array serves to provide an electrical connection for the package with another substrate or device.
- The current trend towards ball grid array and other semiconductor packaging has created a number of challenges. Among these are cracking of the soldermask on the circuit side of the substrate during encapsulation, and less than desirable adhesion of the encapsulant material to the underlying soldermask. Such can create defects in the package that can cause production yield losses and long-term reliability failures. Typical soldermasks used today comprise a polymeric material that is applied to the outer surfaces of the substrate to, among other things, protect the circuitry, define particular features (for example, solder ball pads), define plated areas and control solder wicking during the reflow of solders. Typical soldermask materials used today are relatively soft with low mechanical strength.
- Traditionally, soldermask materials are used to cover all areas of a ball grid array substrate that are not specifically open to reveal some part of the underlying circuit. In the area of the perimeter of the mold body, the soldermask is typically used to protect the circuit traces from the clamping forces applied by the mold body and to form a level surface of the ball grid array substrate so that the mold body can form a good seal during encapsulation. Yet, clamping forces applied by the mold body to the ball grid array substrate can be quite high. In some cases, these forces can be in excess of four tons on a single ball grid array substrate strip. Because of these high clamping forces on the relatively soft character of the soldermask, high shear forces are induced in the soldermask. These shear forces can cause severe cracking of the soldermask. Cracks in the soldermask can cause a functional failure by severing the circuit traces below and, even if not, are a cosmetic defect that may cause such part to be rejected by the consumer.
- It would be desirable to overcome these and other drawbacks associated with semiconductor packaging and packaging processes. Yet, the invention is limited only by the accompanying claims as literally worded and as appropriately interpreted in accordance with the doctrine of equivalents without any limitation being read therein with respect to objective or result.
- The invention comprises semiconductor packaging processes, circuit substrates, semiconductor packages, and ball grid arrays. In one implementation, a transfer mold semiconductor packaging process includes providing a circuit substrate having a semiconductor chip mounted to a side thereof. The circuit substrate has a soldermask on the side. The soldermask includes an elongated outer peripheral trench. A transfer mold is positioned to cover at least a portion of the circuit substrate having the chip mounted thereto. The transfer mold has a void within which the semiconductor chip is received. The void has a perimeter. The transfer mold is positioned such that at least a portion of the void perimeter is aligned over at least a portion of the soldermask peripheral trench. Encapsulant is flowed into the mold void over the semiconductor chip and to within the soldermask trench. After the flowing, the encapsulant is cured into a solidified mass.
- In one implementation, a circuit substrate includes a substrate having opposing sides. At least one of the sides is configured for transfer mold packaging and has conductive traces formed thereon. A soldermask is received on the one side, and has a plurality of openings formed therethrough to locations on the conductive traces. The soldermask includes a peripheral elongated trench therein positioned on the one side to align with at least a portion of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging of the one side. In one implementation, the invention includes a semiconductor package. In one implementation, the invention includes a ball grid array.
- Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
- FIG. 1 is a top diagrammatic partial view of an exemplary circuit substrate showing aspects of a soldermask pattern in accordance with an aspect of the invention.
- FIG. 2 is a view of the FIG. 1 substrate, also showing underlying circuit traces which are not shown in FIG. 1 for clarity.
- FIG. 3 is an enlarged diagrammatic sectional view of a portion of the FIGS. 1 and 2 substrate at one point in a transfer mold process in accordance with an aspect of the invention.
- FIG. 4 is a diagrammatic sectional view of the FIG. 3 device at a processing step subsequent to that shown by FIG. 3.
- FIG. 5 is a diagrammatic sectional view of the FIG. 3 device at a processing step subsequent to that shown by FIG. 4.
- FIG. 6 is a diagrammatic sectional view of the FIG. 3 device at a processing step subsequent to that shown by FIG. 5.
- FIG. 7 is a diagrammatic top view of an alternate embodiment peripheral elongated trench to that depicted in FIG. 1.
- FIG. 8 is a diagrammatic top view of another alternate embodiment peripheral elongated trench to that depicted in FIG. 1.
- FIG. 7 is a diagrammatic top view of still another alternate embodiment peripheral elongated trench to that depicted in FIG. 1.
- This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).
- Various aspects of the invention are described with reference to FIGS.1-5. Referring initially to FIGS. 1-3, a circuit substrate is indicated generally with
reference numeral 10. Such comprises asubstrate 12, for example conventional or yet-to-be-developed printed circuit board or other rigid or flexible material. FIGS. 1 and 2show substrate 12 in the form of an elongated strip of material yet to be singulated.Outlying line 14 shows in the preferred described embodiment the resultant singulated outline of what will be the completed package upon singulation from the strip. FIG. 1 effectively diagrammatically shows the mask openings for the soldermask layer, to be described subsequently. FIG. 2 shows the effective openings from the soldermask within thesingulated outline 14 and, as well, shows exemplary circuit traces. -
Substrate 12 comprises opposingsides sides substrate side 16, with FIG. 3 depicting exemplary circuit traces 22 formed onsubstrate side 18. In the depicted preferred example,substrate side 16 is configured for transfer mold packaging, for example in the exemplary method as described below. - A
soldermask 25 is received onsubstrate side 16 and asoldermask 27 is received onsubstrate side 18.Soldermask 25 has a plurality ofopenings 28 formed therethrough to locations on conductive traces 20.Soldermask 27 onsubstrate side 18 hasvarious openings 30 formed therethrough to various locations on conductive traces 22. - Soldermask25 also comprises a peripheral
elongated trench 35 therein. In the illustrated example, peripheralelongated trench 35 extends entirely throughsoldermask 25 to exposesubstrate side 16 therebeneath. Further in the preferred and illustrated embodiment, peripheralelongated trench 35 is continuous about a periphery defined by the radial outermost portions ofelongated trench 35. Further in the preferred and illustrated embodiment, peripheralelongated trench 35 includes some straight linear segment, more preferably at least four straight linear segments, and most preferably at least eight straight linear segments. Eight straightlinear segments 36 are shown in the exemplary embodiment. Such segments are preferably interconnected as shown, such that the peripheralelongated trench 35 is continuous (no breaks) about the periphery defined thereby. Less preferred would be discontinuities formed withintrench 35 about the periphery,trench 35 not otherwise being formed entirely throughsoldermask 25, and/or other than straight linear segments. By way of example only, FIG. 7, FIG. 8 and FIG. 9 depict respectivealternate embodiments elongated trench 35 is positioned onsubstrate side 16 to align with at least a portion of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging ofsubstrate side 16, as will be further described. - A
semiconductor chip 40 is adhered (for example with a die attach adhesive 17) tosubstrate side 16, withsoldermask 25 in the preferred embodiment being received betweenchip 40 andsubstrate 12. An exemplary bond wire 42 (FIG. 3) is shown interconnecting a portion of the circuitry onchip 40 with a location oncircuit trace 20 through asoldermask opening 28. - Referring to FIG. 4, a
transfer mold 50 is positioned to cover at least a portion ofcircuit substrate 12 havingsemiconductor chip 40 mounted thereto.Transfer mold 50 includes amold body 52 having a void 54 within whichsemiconductor chip 40 is received.Void 54 includes aperimeter 56.Transfer mold 50 is positioned to align at least a portion ofvoid perimeter 56 over at least a portion of soldermaskperipheral trench 35. In the illustrated and preferred embodiment, the soldermask peripheral trench and perimeter are configured such that a positioning can occur, as shown, which aligns all ofvoid perimeter 56 over all of soldermaskperipheral trench 35. Further in the preferred embodiment as shown, the preferred positioning and alignment positionsmold void perimeter 56 to substantially centrally align relative to the lateral confines ofelongated soldermask trench 35. - Referring to FIG. 5, an
encapsulant 60 is flowed intomold void 54 oversemiconductor chip 40 and to withinsoldermask trench 35. Preferably as shown,insulative encapsulant 60 fills soldermasktrench 35. The insulative encapsulant is allowed to cure into a solidified mass. - FIG. 6 illustrates
transfer mold 50 having been removed, and a plurality ofsolder balls 62 having been mounted throughsoldermask openings 30 toconductive traces 22 onsubstrate side 18. Thus, FIG. 6 illustrates an exemplarypreferred semiconductor package 65 in the form of a ball grid array. - In the preferred embodiment, and not required of the claims unless literally worded therein, the elongated trench provides stress relief at the mold void perimeter such that cracking of present soldermask materials at this location can be advantageously avoided. Further, present encapsulant materials tend to better adhere to present circuit board materials than to present soldermask materials. Accordingly, the invention might provide better overall adhesion of the encapsulant to the underlying substrate due to added contact area of the encapsulant to board material by provision of the preferred soldermask trench to the substrate. By way of example only and in no way by way of limitation, exemplary existing circuit board materials are bismalimide triazine or FR-4; exemplary encapsulant material includes silica filled Novolac or phenolic resin epoxy molding compound; and exemplary soldermask materials are liquid or dry film photoimageable polyimide such as Taiyo PSR 4000 available from Taiyo Ink Mfg. Co. of Tokyo, Japan.
- In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.
Claims (48)
1. A transfer mold semiconductor packaging process comprising:
providing a circuit substrate having a semiconductor chip mounted to a side thereof, the circuit substrate having a soldermask on the side, the soldermask comprising an elongated outer peripheral trench;
positioning a transfer mold to cover at least a portion of the circuit substrate having the semiconductor chip mounted thereto, the transfer mold having a void within which the semiconductor chip is received, the void having a perimeter, the positioning comprising aligning at least a portion of the void perimeter over at least a portion of the soldermask peripheral trench;
flowing encapsulant into the mold void over the semiconductor chip and to within the soldermask trench; and
after the flowing, curing the encapsulant into a solidified mass.
2. The process of claim 1 comprising providing the soldermask elongated outer peripheral trench to be continuous about a periphery.
3. The process of claim 1 comprising providing the soldermask elongated outer peripheral trench to be discontinuous about a periphery.
4. The process of claim 1 wherein the positioning aligns all of the void perimeter over at least a portion of the soldermask peripheral trench.
5. The process of claim 1 wherein the positioning aligns all of the soldermask peripheral trench over at least a portion of the void perimeter.
6. The process of claim 1 wherein the positioning aligns all of the void perimeter over all of the soldermask peripheral trench.
7. The process of claim 1 comprising providing the soldermask elongated outer peripheral trench to expose the circuit substrate.
8. The process of claim 1 wherein the soldermask is received intermediate the semiconductor chip and the circuit substrate.
9. The process of claim 1 wherein the positioning positions the mold void perimeter to substantially centrally align with the elongated soldermask trench.
10. A transfer mold semiconductor packaging process comprising:
providing a circuit substrate having a semiconductor chip mounted to a side thereof, the circuit substrate having a soldermask on the side, the soldermask comprising a continuous elongated outer peripheral trench extending therethrough to the circuit substrate;
positioning a transfer mold to cover at least a portion of the circuit substrate having the chip mounted thereto, the transfer mold having a void within which the semiconductor chip is received, the void having a perimeter, the positioning comprising aligning all of the void perimeter over all of the soldermask peripheral trench;
flowing encapsulant into the mold void over the semiconductor chip and to within the soldermask trench; and
after the flowing, curing the encapsulant into a solidified mass.
11. The process of claim 10 wherein the positioning positions the mold void perimeter to substantially centrally align with the elongated soldermask trench.
12. A circuit substrate comprising:
a substrate having opposing sides, at least one of the sides being configured for transfer mold packaging and having conductive traces formed thereon; and
a soldermask received on the one side, the soldermask having a plurality of openings formed therethrough to locations on the conductive traces, the soldermask comprising a peripheral elongated trench therein positioned on the one side to align with at least a portion of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging of the one side.
13. The substrate of claim 12 wherein the peripheral elongated trench includes a straight linear segment.
14. The substrate of claim 12 wherein the peripheral elongated trench includes a curved linear segment.
15. The substrate of claim 12 wherein the peripheral elongated trench is continuous about a periphery.
16. The substrate of claim 12 wherein the peripheral elongated trench is continuous about a periphery, the trench and periphery defining at least four straight linear segments.
17. The substrate of claim 12 wherein the peripheral elongated trench is continuous about a periphery, the trench and periphery defining at least eight straight linear segments.
18. The substrate of claim 12 wherein the peripheral elongated trench extends through the soldermask exposing the one substrate side therebeneath.
19. The substrate of claim 12 wherein the peripheral elongated trench is positioned on the one side to align with all of the elongated mold void perimeter of the transfer mold to be used for transfer mold packaging of the one side.
20. The substrate of claim 12 comprising a semiconductor chip adhered to the one side of the substrate.
21. The substrate of claim 12 comprising a semiconductor chip adhered to the one side of the substrate with the soldermask being received between the chip and substrate.
22. The substrate of claim 12 comprising an insulative encapsulant received over at least a portion of the soldermask and within the elongated peripheral trench.
23. The substrate of claim 12 comprising an insulative encapsulant received over at least a portion of the soldermask and filling the elongated peripheral trench.
24. A circuit substrate comprising:
a substrate having opposing sides, at least one of the sides being configured for transfer mold packaging and having conductive traces formed thereon; and
a soldermask received on the one side, the soldermask having a plurality of openings formed therethrough to locations on the conductive traces, the soldermask comprising a peripheral continuous elongated trench therein extending to the substrate and positioned on the one side to align with all of an elongated mold void perimeter of a transfer mold to be used for transfer mold packaging of the one side.
25. The substrate of claim 24 comprising a semiconductor chip adhered to the one side of the substrate.
26. The substrate of claim 24 comprising a semiconductor chip adhered to the one side of the substrate with the soldermask being received between the chip and substrate.
27. The substrate of claim 24 comprising an insulative encapsulant received over at least a portion of the soldermask and within the elongated peripheral trench.
28. The substrate of claim 24 comprising an insulative encapsulant received over at least a portion of the soldermask and filling the elongated peripheral trench.
29. The substrate of claim 24 wherein the peripheral elongated trench is positioned on the one side to centrally align with at least a portion of the elongated mold void perimeter of the transfer mold to be used for transfer mold packaging of the one side.
30. The substrate of claim 24 wherein the peripheral elongated trench includes a straight linear segment.
31. The substrate of claim 24 wherein the peripheral elongated trench includes at least four interconnected straight linear segments.
32. The substrate of claim 24 wherein the peripheral elongated trench includes at least eight interconnected straight linear segments.
33. A semiconductor package comprising:
a semiconductor chip;
a circuit substrate having opposing sides, at least one of the opposing sides having conductive traces formed thereon;
a soldermask received on the one side, the soldermask having openings formed therethrough to locations on the conductive traces, the semiconductor chip being mounted to the one side;
an outer peripheral elongated trench formed in the soldermask on the one side radially outward of where the semiconductor chip is mounted; and
an insulative encapsulant being received about the semiconductor chip on the one side, the insulative encapsulant having an outer perimeter, at least a portion of the encapsulant perimeter being received within the outer peripheral soldermask trench.
34. The semiconductor package of claim 33 wherein the peripheral elongated trench includes a straight linear segment.
35. The semiconductor package of claim 33 wherein the peripheral elongated trench is continuous about a periphery.
36. The semiconductor package of claim 33 wherein the peripheral elongated trench is continuous about a periphery, the trench and periphery defining at least four straight linear segments.
37. The semiconductor package of claim 33 wherein the peripheral elongated trench is continuous about a periphery, the trench and periphery defining at least eight straight linear segments.
38. The semiconductor package of claim 33 wherein the peripheral elongated trench extends through the soldermask to the one substrate side therebeneath.
39. The semiconductor package of claim 33 wherein the peripheral elongated trench is continuous about a periphery, and the peripheral elongated trench extends through the soldermask to the one substrate side therebeneath.
40. The semiconductor package of claim 33 wherein the soldermask peripheral elongated trench is filled with the insulative encapsulant.
41. A ball grid array comprising:
a semiconductor chip;
a circuit substrate having opposing sides, the opposing sides having respective conductive traces formed thereon;
a soldermask received on each of the opposing sides, the respective soldermasks having openings formed therethrough to locations on the conductive traces, the semiconductor chip being mounted to the one of the opposing sides, a plurality of solder balls respectively mounted through at least some of the soldermask openings to the conductive traces on the other of the opposing sides, ;
an outer peripheral elongated trench formed in the soldermask on the one side radially outward of where the semiconductor chip is mounted; and
an insulative encapsulant being received about the semiconductor chip on the one side, the insulative encapsulant having an outer perimeter, at least a portion of the encapsulant perimeter being received within the outer peripheral soldermask trench.
42. The ball grid array of claim 41 wherein the peripheral elongated trench includes a straight linear segment.
43. The ball grid array of claim 41 wherein the peripheral elongated trench is continuous about a periphery.
44. The ball grid array of claim 41 wherein the peripheral elongated trench is continuous about a periphery, the trench and periphery defining at least four straight linear segments.
45. The ball grid array of claim 41 wherein the peripheral elongated trench is continuous about a periphery, the trench and periphery defining at least eight straight linear segments.
46. The ball grid array of claim 41 wherein the peripheral elongated trench extends through the soldermask to the one substrate side therebeneath.
47. The ball grid array of claim 41 wherein the peripheral elongated trench is continuous about a periphery, and the peripheral elongated trench extends through the soldermask to the one substrate side therebeneath.
48. The ball grid array of claim 41 wherein the soldermask peripheral elongated trench is filled with the insulative encapsulant.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/827,017 US20030205828A9 (en) | 2001-04-05 | 2001-04-05 | Circuit substrates, semiconductor packages, and ball grid arrays |
US10/286,658 US7384805B2 (en) | 2001-04-05 | 2002-11-01 | Transfer mold semiconductor packaging processes |
US10/610,556 US7095115B2 (en) | 2001-04-05 | 2003-07-02 | Circuit substrates, semiconductor packages, and ball grid arrays |
US10/986,424 US7148083B2 (en) | 2001-04-05 | 2004-11-10 | Transfer mold semiconductor packaging processes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/827,017 US20030205828A9 (en) | 2001-04-05 | 2001-04-05 | Circuit substrates, semiconductor packages, and ball grid arrays |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US10/286,658 Division US7384805B2 (en) | 2001-04-05 | 2002-11-01 | Transfer mold semiconductor packaging processes |
US10/610,556 Continuation US7095115B2 (en) | 2001-04-05 | 2003-07-02 | Circuit substrates, semiconductor packages, and ball grid arrays |
Publications (2)
Publication Number | Publication Date |
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US20020145208A1 US20020145208A1 (en) | 2002-10-10 |
US20030205828A9 true US20030205828A9 (en) | 2003-11-06 |
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US10/286,658 Expired - Fee Related US7384805B2 (en) | 2001-04-05 | 2002-11-01 | Transfer mold semiconductor packaging processes |
US10/610,556 Expired - Fee Related US7095115B2 (en) | 2001-04-05 | 2003-07-02 | Circuit substrates, semiconductor packages, and ball grid arrays |
US10/986,424 Expired - Fee Related US7148083B2 (en) | 2001-04-05 | 2004-11-10 | Transfer mold semiconductor packaging processes |
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Application Number | Title | Priority Date | Filing Date |
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US10/286,658 Expired - Fee Related US7384805B2 (en) | 2001-04-05 | 2002-11-01 | Transfer mold semiconductor packaging processes |
US10/610,556 Expired - Fee Related US7095115B2 (en) | 2001-04-05 | 2003-07-02 | Circuit substrates, semiconductor packages, and ball grid arrays |
US10/986,424 Expired - Fee Related US7148083B2 (en) | 2001-04-05 | 2004-11-10 | Transfer mold semiconductor packaging processes |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050011672A1 (en) * | 2003-07-17 | 2005-01-20 | Alawani Ashish D. | Overmolded MCM with increased surface mount component reliability |
US8043545B2 (en) * | 2007-12-31 | 2011-10-25 | Texas Instruments Incorporated | Methods and apparatus to evenly clamp semiconductor substrates |
JP2011060892A (en) * | 2009-09-08 | 2011-03-24 | Renesas Electronics Corp | Electronic device and method for manufacturing the same |
US20110117232A1 (en) * | 2009-11-18 | 2011-05-19 | Jen-Chung Chen | Semiconductor chip package with mold locks |
US20110115067A1 (en) * | 2009-11-18 | 2011-05-19 | Jen-Chung Chen | Semiconductor chip package with mold locks |
CN102438413B (en) * | 2011-10-17 | 2014-04-02 | 广州杰赛科技股份有限公司 | Second-order ladder groove bottom graphical printed board and processing method thereof |
US9099363B1 (en) | 2014-02-12 | 2015-08-04 | Freescale Semiconductor, Inc. | Substrate with corner cut-outs and semiconductor device assembled therewith |
US9443780B2 (en) * | 2014-09-05 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having recessed edges and method of manufacture |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4556896A (en) * | 1982-08-30 | 1985-12-03 | International Rectifier Corporation | Lead frame structure |
US5216278A (en) * | 1990-12-04 | 1993-06-01 | Motorola, Inc. | Semiconductor device having a pad array carrier package |
US5767446A (en) * | 1995-10-27 | 1998-06-16 | Anam Industrial Co., Ltd. | Printed circuit board having epoxy barrier around a throughout slot and ball grid array semiconductor package |
US5900669A (en) * | 1997-06-30 | 1999-05-04 | Motorola, Inc. | Semiconductor component |
US6107683A (en) * | 1997-06-20 | 2000-08-22 | Substrate Technologies Incorporated | Sequentially built integrated circuit package |
US6246124B1 (en) * | 1998-09-16 | 2001-06-12 | International Business Machines Corporation | Encapsulated chip module and method of making same |
US6365979B1 (en) * | 1998-03-06 | 2002-04-02 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5144412A (en) * | 1987-02-19 | 1992-09-01 | Olin Corporation | Process for manufacturing plastic pin grid arrays and the product produced thereby |
US5258649A (en) * | 1989-05-20 | 1993-11-02 | Hitachi, Ltd. | Semiconductor device and electronic apparatus using semiconductor device |
US5136366A (en) * | 1990-11-05 | 1992-08-04 | Motorola, Inc. | Overmolded semiconductor package with anchoring means |
JP2706000B2 (en) * | 1990-11-13 | 1998-01-28 | シチズン時計株式会社 | Resin-sealed semiconductor device |
JP3068667B2 (en) * | 1991-07-11 | 2000-07-24 | シャープ株式会社 | Optical coupling device |
JP3142398B2 (en) * | 1992-11-06 | 2001-03-07 | 三菱電機株式会社 | Portable semiconductor device and manufacturing method thereof |
US5336931A (en) * | 1993-09-03 | 1994-08-09 | Motorola, Inc. | Anchoring method for flow formed integrated circuit covers |
US6111306A (en) * | 1993-12-06 | 2000-08-29 | Fujitsu Limited | Semiconductor device and method of producing the same and semiconductor device unit and method of producing the same |
FR2733848B1 (en) * | 1995-05-05 | 1997-05-30 | Schlumberger Ind Sa | COATING PROCESS FOR AN ELECTRONIC COMPONENT AND DEVICE FOR IMPLEMENTING THE SAID PROCESS |
US5571071A (en) * | 1995-08-08 | 1996-11-05 | Shapiro; Jeffrey M. | Laryngoscope blade including means for dispensing topical anesthetic |
JP3507251B2 (en) * | 1995-09-01 | 2004-03-15 | キヤノン株式会社 | Optical sensor IC package and method of assembling the same |
JP3683996B2 (en) * | 1996-07-30 | 2005-08-17 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US6064111A (en) * | 1996-07-31 | 2000-05-16 | Hitachi Company, Ltd. | Substrate for holding a chip of semi-conductor package, semi-conductor package, and fabrication process of semi-conductor package |
US5976913A (en) * | 1996-12-12 | 1999-11-02 | Tessera, Inc. | Microelectronic mounting with multiple lead deformation using restraining straps |
JP3032964B2 (en) * | 1996-12-30 | 2000-04-17 | アナムインダストリアル株式会社 | Ball grid array semiconductor package and manufacturing method |
US6111315A (en) * | 1997-01-21 | 2000-08-29 | Texas Instruments Incorporated | Semiconductor package with offset die pad |
JPH11186294A (en) * | 1997-10-14 | 1999-07-09 | Sumitomo Metal Smi Electron Devices Inc | Semiconductor package and manufacture thereof |
US6324069B1 (en) * | 1997-10-29 | 2001-11-27 | Hestia Technologies, Inc. | Chip package with molded underfill |
JPH11186432A (en) * | 1997-12-25 | 1999-07-09 | Canon Inc | Semiconductor package and its manufacture |
JP3939847B2 (en) | 1998-01-09 | 2007-07-04 | シチズンホールディングス株式会社 | Manufacturing method of semiconductor device |
JP3020201B2 (en) * | 1998-05-27 | 2000-03-15 | 亜南半導体株式会社 | Molding method of ball grid array semiconductor package |
US6048755A (en) * | 1998-11-12 | 2000-04-11 | Micron Technology, Inc. | Method for fabricating BGA package using substrate with patterned solder mask open in die attach area |
US6750551B1 (en) * | 1999-12-28 | 2004-06-15 | Intel Corporation | Direct BGA attachment without solder reflow |
KR200291282Y1 (en) * | 1999-04-14 | 2002-10-14 | 앰코 테크놀로지 코리아 주식회사 | printed circuit board for semi-conductor package |
US6452113B2 (en) * | 1999-07-15 | 2002-09-17 | Incep Technologies, Inc. | Apparatus for providing power to a microprocessor with integrated thermal and EMI management |
US6534861B1 (en) * | 1999-11-15 | 2003-03-18 | Substrate Technologies Incorporated | Ball grid substrate for lead-on-chip semiconductor package |
US6331453B1 (en) * | 1999-12-16 | 2001-12-18 | Micron Technology, Inc. | Method for fabricating semiconductor packages using mold tooling fixture with flash control cavities |
JP3420153B2 (en) * | 2000-01-24 | 2003-06-23 | Necエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US6452268B1 (en) * | 2000-04-26 | 2002-09-17 | Siliconware Precision Industries Co., Ltd. | Integrated circuit package configuration having an encapsulating body with a flanged portion and an encapsulating mold for molding the encapsulating body |
JP4555436B2 (en) * | 2000-06-29 | 2010-09-29 | 富士通株式会社 | Resin molding method for thin film resin substrate and high frequency module |
US6635209B2 (en) * | 2000-12-15 | 2003-10-21 | Siliconware Precision Industries Co., Ltd. | Method of encapsulating a substrate-based package assembly without causing mold flash |
US20020074590A1 (en) | 2000-12-19 | 2002-06-20 | Macronix International Co., Ltd. | Non-volatile flash memory cell with asymmetric threshold voltage |
US6825067B2 (en) * | 2002-12-10 | 2004-11-30 | St Assembly Test Services Pte Ltd | Mold cap anchoring method for molded flex BGA packages |
-
2001
- 2001-04-05 US US09/827,017 patent/US20030205828A9/en not_active Abandoned
-
2002
- 2002-11-01 US US10/286,658 patent/US7384805B2/en not_active Expired - Fee Related
-
2003
- 2003-07-02 US US10/610,556 patent/US7095115B2/en not_active Expired - Fee Related
-
2004
- 2004-11-10 US US10/986,424 patent/US7148083B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4556896A (en) * | 1982-08-30 | 1985-12-03 | International Rectifier Corporation | Lead frame structure |
US5216278A (en) * | 1990-12-04 | 1993-06-01 | Motorola, Inc. | Semiconductor device having a pad array carrier package |
US5767446A (en) * | 1995-10-27 | 1998-06-16 | Anam Industrial Co., Ltd. | Printed circuit board having epoxy barrier around a throughout slot and ball grid array semiconductor package |
US6107683A (en) * | 1997-06-20 | 2000-08-22 | Substrate Technologies Incorporated | Sequentially built integrated circuit package |
US5900669A (en) * | 1997-06-30 | 1999-05-04 | Motorola, Inc. | Semiconductor component |
US6365979B1 (en) * | 1998-03-06 | 2002-04-02 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
US6246124B1 (en) * | 1998-09-16 | 2001-06-12 | International Business Machines Corporation | Encapsulated chip module and method of making same |
Also Published As
Publication number | Publication date |
---|---|
US20030104657A1 (en) | 2003-06-05 |
US20020145208A1 (en) | 2002-10-10 |
US7095115B2 (en) | 2006-08-22 |
US20040097011A1 (en) | 2004-05-20 |
US7148083B2 (en) | 2006-12-12 |
US20050101061A1 (en) | 2005-05-12 |
US7384805B2 (en) | 2008-06-10 |
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