US20030119333A1 - Method and system for coating and developing - Google Patents
Method and system for coating and developing Download PDFInfo
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- US20030119333A1 US20030119333A1 US10/354,079 US35407903A US2003119333A1 US 20030119333 A1 US20030119333 A1 US 20030119333A1 US 35407903 A US35407903 A US 35407903A US 2003119333 A1 US2003119333 A1 US 2003119333A1
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- treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Abstract
The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the; exposure processing for the substrate.
According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film.
Description
- 1. Field of the Invention
- The present invention relates to coating and developing treatment method and system for a substrate.
- 2. Description of the Related Art
- In photolithography of the process of fabricating a semiconductor device, for example, resist coating treatment for forming a resist film on the surface of a wafer, developing treatment for developing the wafer after pattern exposure, heat treatment and cooling treatment performed before the coating treatment, before and after exposure processing, and after the developing treatment, and the like are performed. Such treatment and processing are performed in treatment units provided individually, and these treatment units are unified as a coating and developing treatment system so as to continuously perform the aforesaid successive treatment and processing. The exposure treatment of a pattern is usually performed in an aligner disposed adjacent to the coating and developing treatment system.
- When the wafer is treated in this coating and developing treatment system, air cleaned by an air cleaner or the like, for example, is supplied as down-flowing air into the coating and developing treatment system in order to prevent impurities from adhering to the wafer, while an atmosphere in the coating and developing treatment system is exhausted, whereby the wafer can be treated in a clean condition.
- In recent years, however, exposure technology in which a beam with a shorter wavelength (for example, 157 nm) is used is being developed to form a finer and more precise circuit pattern. When the beam with the short wavelength is used, there is a fear that even impurities at molecular level such as oxygen, ozone, and water vapor which have been insignificant so far exert a bad influence on exposure processing, whereby a precise circuit pattern is not formed.
- Hence, when at least the wafer is subjected to exposure processing, it is required that no impurities such as oxygen adhere onto the wafer. If only clean air is supplied as in prior arts, the adhesion of impurities onto the wafer can not be suppressed effectively since impurities such as oxygen are contained in the air, and moreover impurities adhering onto the wafer can not be removed.
- The present invention is made in view of such a point, and its object is to provide a coating and developing treatment method and a coating and developing treatment system for preventing fine impurities at molecular level from adhering to a substrate such as a wafer.
- To attain this object, a coating and developing treatment method of the present invention is a method for performing coating and developing treatment for a substrate, comprising the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, the method further comprising the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate.
- The step of supplying the treatment gas to form the treatment film on the surface of the coating film may be performed after the step of cooling the substrate after the heat treatment, may be performed during the step of cooling the substrate after the heat treatment, may be performed after the step of performing the heat treatment, or may be performed during the step of performing the heat treatment.
- Furthermore, a coating and developing treatment system of the present invention is a coating and developing treatment system for performing coating and developing treatment for a substrate, comprising: a coating treatment unit for forming a coating film on the substrate; a developing treatment unit for developing the substrate; a thermal treatment unit for performing thermal treatment for the substrate; and a treatment gas supply unit for supplying a treatment gas to the coating film formed on the substrate to form a treatment film on a surface of the coating film.
- It should be mentioned that the thermal treatment unit in the present invention implies a heat treatment unit, a cooling treatment unit, and a heat and cooling treatment unit.
- According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film. Especially, if the impurities adhere to the substrate when the substrate is subjected to exposure processing, there is a possibility that the impurities absorb energy of a laser beam or the like used in exposure so that the exposure processing is not suitably performed. The aforesaid formation of the treatment film, however, enables suitable exposure processing. Further, the treatment film formed by the treatment gas is excellent in permeability, and permits a beam with a wavelength as short as about 157 nm to pass it. Accordingly, the adhesion of impurities to the coating film formed on the substrate is prevented while a predetermined circuit pattern can be precisely exposed onto this coating film.
- FIG. 1 is an explanatory plan view of a coating and developing treatment system according to the present embodiment;
- FIG. 2 is a front view of the coating and developing treatment system in FIG. 1;
- FIG. 3 is a rear view of the coating and developing treatment system in FIG. 1;
- FIG. 4 is an explanatory view of a vertical section of a gas supply unit in the coating and developing treatment system in FIG. 1;
- FIG. 5 is a plan view showing a state in which a protective gas is supplied to a wafer;
- FIG. 6 is an explanatory view of an enlarged vertical section showing the state in which the protective gas is supplied to the wafer;
- FIG. 7 is a schematic horizontal sectional view showing a heat and cooling treatment unit in the coating and developing treatment system in FIG.
- FIG. 8 is a flowchart showing a treatment flow from resist coating to exposure processing;
- FIG. 9 is a schematic horizontal sectional view showing the heat and cooling treatment unit when a gas nozzle is provided;
- FIG. 10 is a flowchart showing a treatment flow from resist coating to exposure processing when the gas nozzle is provided in the heat and cooling treatment unit;
- FIG. 11 is a flow chart showing a modification example of the treatment flow from resist coating to exposure processing when the gas nozzle is provided in the heat and cooling treatment unit;
- FIG. 12 is a flow chart showing another modification example of the treatment flow from resist coating to exposure processing when the gas nozzle is provided in the heat and cooling treatment unit; and
- FIG. 13 is an explanatory view when a gas supply unit is provided on the top of each area of the coating and developing
treatment system 1 in FIG. 1 and an exhaust pipe is provided at the bottom of each area thereof. - A preferred embodiment of the present invention will be explained below. FIG. 1 is a plan view of a coating and developing
treatment system 1 according to this embodiment, FIG. 2 is a front view of the coating and developingtreatment system 1, and FIG. 3 is a rear view of the coating and developingtreatment system 1. - As shown in FIG. 1, the coating and developing
treatment system 1 has a structure in which acassette station 2 for transferring, for example, 25 wafers W per cassette, as a unit, from/to the outside into/from the coating and developingtreatment system 1 and carrying the wafer W into/out of a cassette C, aprocessing station 3 as a treatment section where various kinds of treatment units each of which performs predetermined treatment for the wafers W one by one in a coating and developing process are stacked in multiple tiers, and aninterface section 4 for receiving and sending the wafer W from/to analigner 5 provided adjacent to the coating and developingtreatment system 1 are integrally connected in acasing 1 a. - In the
cassette station 2, a plurality of cassettes C are freely mounted in a line in an X-direction (in a top-to-bottom direction in FIG. 1) at predetermined positions on a cassette mounting table 6 which is a mount portion. Awafer carrier 7 movable in the direction of arrangement of the cassettes (the X-direction) and in the direction of arrangement of the wafers W housed in the cassette C (a Z-direction, i.e., Vertical direction) can freely move along acarrier path 8 and selectively get access to each of the cassettes C. - The
wafer carrier 7 has an alignment function of aligning the wafer W. Thiswafer carrier 7 is structured to be able to get access to anextension unit 32 and anadhesion unit 31 included in a third treatment unit group G3 on theprocessing station 3 side as will be described later. - In the
processing station 3, amain carrier unit 13 is disposed in the middle thereof, and around themain carrier unit 13, various treatment units are stacked in multiple tiers to compose treatment unit groups. In this coating and developingtreatment system 1, four treatment unit groups G1, G2, G3, and G4 are disposed. The first and second treatment unit groups G1 and G2 are disposed on the front side of the coating and developingtreatment system 1. The third treatment unit group G3 is disposed adjacent to thecassette station 2. The fourth treatment unit group G4 is disposed adjacent to theinterface section 4. Moreover, a fifth treatment unit group G5 shown by a broken line can be additionally disposed on the rear side as an option. Themain carrier unit 13 can carry the wafer W into/out of various treatment units which are disposed in these treatment unit groups G1, G2, G3, G4, and G5 and will be described later. - In the first treatment unit group G1, for example, as shown in FIG. 2, a
resist coating unit 17 for coating the wafer with a resist solution and a developingtreatment unit 18 for subjecting the wafer W after exposure processing to developing treatment are stacked in two tiers from the bottom in order. Similarly, in the second treatment unit group G2, aresist coating unit 19 and a developingtreatment unit 20 are stacked in two tiers from the bottom in order. - In the third treatment unit group G3, a
cooling unit 30 for subjecting the wafer W to cooling treatment, anadhesion unit 31 for enhancing adhesion of the resist solution and the wafer W, anextension unit 32 for making the wafer W wait,cooling units units - In the fourth treatment unit group G4, a
cooling unit 40 for subjecting the wafer W to cooling treatment,extension units gas nozzle 55 as a treatment gas supply means in the present invention, heat andcooling treatment units 44 and 45 (PEB/COL in FIG. 3) for heating (post-exposure baking) the wafer W after exposure processing and thereafter cooling the wafer W to a predetermined temperature, heat andcooling treatment units 46 and 47 (PRE/COL in FIG. 3) as thermal treatment units before exposure for heating the wafer W before exposure processing to vaporize a solvent in a resist solution and thereafter cooing the wafer W to a predetermined temperature, or the like are stacked, for example, in eight tiers from the bottom in order. - As shown in FIG. 4, a
case 50 is provided in acasing 43 a in thegas supply unit 43. A disc-shaped mounting board 51 is attached to thiscase 50. Three through-holes 52 are formed in themounting board 51, and raising and loweringpins 53 are respectively provided in the through-holes 52 and structured to be freely raised and lowered in the through-holes 52 by a raising and loweringmechanism 54, to raise and lower the wafer W to thereby mount the wafer W on themounting board 51, and to be able to receive and send the wafer W from/to themain carrier unit 13 and awafer carrier 65 which will be described later. - A
gas nozzle 55 for supplying a protective gas as a treatment gas is provided above themounting board 51. The lateral width of thisgas nozzle 55 is almost the same as the diameter of the wafer W, for example, and supplies the protective gas from a plurality ofdischarge ports 56 formed in its lower face. Thegas nozzle 55 is supported by anarm 57, and as shown in FIG. 5, thearm 57 is rotated in a θ-direction above the wafer W by a drive mechanism (not illustrated). Thus, thegas nozzle 55 supplies the protective gas to all the entire wafer W. Anexhaust pipe 58 for exhausting an atmosphere in thecasing 43 a is connected to the bottom of thecasing 43 a. - A fluorine (F2) series gas, for example, is used as the protective gas. As examples of the fluorine series protective gas, a gas containing a copolymer of norbornane and tetrafluoroethylene and a gas containing a polymer substituted for hexafluoronol on norbornane are given. Also a gas containing macromolecules such as polysiloxane or a series in which an alicyclic group is attached on polyacrylic acid can be proposed.
- When the protective gas is supplied, as shown in FIG. 6, a
protective film 61 with a thin film thickness is formed on the surface of a resistfilm 60 formed on the wafer W, and the resistfilm 60 is covered with theprotective film 61. Theprotective film 61 keeps impurities at a distance and protects the resistfilm 60 from oxygen, ozone, water vapor, and the like in the atmosphere. Moreover, theprotective film 61 has high permeability and thereby allows even a beam with a short wavelength to pass through it, whereby a predetermined circuit pattern can be exposed on the resistfilm 60. - As shown in FIG. 7, the heat and
cooling treatment unit 44 has a disc-shapedhot plate 63 for heating the wafer W and achill plate 64 which moves onto thehot plate 63 to receive the wafer W from thehot plate 63 and cools the wafer W, on a base 62 in acasing 44 a. The heat andcooling treatment unit 44 performs heat and cooling treatment for the wafer W continuously in the same unit, whereby a thermal budget given to the wafer W by heating can be kept always constant. The other heat and coolingunits 45 to 47 have the same structure. - A
wafer carrier 65 is provided in the middle of theinterface section 4. Thewafer carrier 65 is structured to be freely movable in the X-direction (the top-to-bottom direction in FIG. 1) and the Z-direction (the vertical direction) and rotatable in the θ-direction (the direction of rotation around a Z-axis) so as to be able to get access to theextension units gas supply unit 43 which are included in the fourth treatment unit group G4, aperipheral exposure unit 66, and thealigner 5 to transfer the wafer W to each of them. - The
aligner 5 for subjecting the wafer W to exposure processing is provided adjacent to theinterface section 4. Thisaligner 5 is hermetically sealed by acasing 5 a of thealigner 5, so that an atmosphere in thealigner 5 can be tightly controlled. Atransit opening 67 through which the wafer W is carried into/out of theinterface section 4 is provided on theinterface section 4 side of thecasing 5 a, and ashutter 68 for freely opening and closing thetransit opening 67 is provided at thetransit opening 67. - Next, a photolithography process performed in the coating and developing
treatment system 1 structured as above will be explained. - When the treatment of the wafer W is started, first in the
cassette station 2, one untreated wafer W is taken out of the cassette C by thewafer carrier 7 and carried into theadhesion unit 31 in thethird processing station 3. - The wafer W which is coated with an adhesion promoter such as HMDS which promotes adhesion with the resist solution in the
adhesion unit 31 is then transferred to thecooling unit 30 by themain carrier unit 13 and cooled to a predetermined temperature. - Thereafter, the wafer W is treated based on the flow shown in FIG. 8 until it is subjected to exposure processing Namely, as shown in FIG. 8, the wafer W is transferred to the resist
coating unit cooling treatment unit 46 or 47 (PRE/COL in FIG. 3). In the heat andcooling treatment unit chill plate 64. - On this occasion, instead of performing heat treatment and cooling treatment sequentially in respective units provided separately, heat and cooling treatment is performed in a single unit such as the heat and
cooling treatment unit cooling treatment units 44 to 47, whereby the time required from the resist coating treatment to the developing treatment can be made the same for all the wafers W. - Thereafter, the wafer W is transferred to the
gas supply unit 43. As shown in FIG. 6, the protective gas is supplied to the wafer W to thereby form theprotective film 61 on the surface of the resist film 60 (S4 in FIG. 8). - The wafer W is then transferred to the
extension unit 41, and thewafer carrier 65 receives the wafer W from theextension unit 41 and transfers the wafer W to theperipheral exposure unit 66 in theinterface section 4. The wafer W the peripheral portion of which is exposed is transferred to thealigner 5 through thetransit opening 67. At this time, theshutter 68 is opened. After the wafer W is transferred to thealigner 5, theshutter 68 is closed again. - While the wafer W is transferred from the
gas supply unit 43 to thealigner 5, theprotective film 61 protects not only the surface of the resistfilm 60 but also the wafer W itself and prevents impurities such as oxygen, ozone, and water vapor, and particulates from adhering thereto. Hence, the wafer W can be transferred to thealigner 5 in a clean condition. In thealigner 5, a predetermined circuit pattern is exposed on the wafer W (S5 in FIG. 8). - The wafer W which has undergone exposure is transferred to the
extension unit 42 in theprocessing station 3 through theinterface section 4 by thewafer carrier 65 again. The wafer W is then transferred to the heat andcooling treatment unit main carrier unit 13 and subjected to heat and cooling treatment after exposure processing in order. - Thereafter, the wafer W is transferred to the developing
treatment unit postbaking unit cooling unit 33 or. 34 and cooled to a predetermined temperature. The wafer W is then transferred to theextension unit 32, and returned therefrom to the cassette C in thecassette station 2 by thewafer carrier 7. A successive photolithography process is completed through the aforesaid steps. - According to the aforesaid embodiment, the
protective film 61 is formed on the surface of the resistfilm 60 by supplying the protective gas, whereby theprotective film 61 can protect the wafer W from impurities such as oxygen and water vapor in an atmosphere. Especially, if the impurities adhere to the wafer W when the wafer W is subjected to exposure processing, there is a possibility that the impurities absorb energy of a laser beam or the like used in exposure so that the predetermined circuit pattern can not be precisely exposed onto the resistfilm 60. The aforesaid formation of theprotective film 61, however, enables suitable exposure processing. Further, theprotective film 61 formed by the protective gas is excellent in permeability, and permits a beam with a wavelength as short as about 157 nm to pass it. Accordingly, the adhesion of impurities to the resistfilm 60 formed on the wafer W is prevented while the predetermined circuit pattern can be precisely exposed on the resistfilm 60, thereby greatly improving the yield of the wafer W. The shorter the wavelength of a laser beam used in thealigner 5 is, the larger an influence exerted by the impurities is. Therefore, its effect is large when a laser beam with a short wavelength is used. - Especially, if the protective gas is a fluorine (F2) series gas, the adhesion of water and the like can be prevented, and the
protective film 61 excellent in permeability can be obtained. - Incidentally, although an example of the embodiment of the present invention is explained, the present invention is not limited to this example, and can be modified variously. For example, a time to form the
protective film 61 on the wafer W can be set flexibly according to various situations. Namely, as shown in FIG. 9, thegas nozzle 55 and thearm 5 7 may be provided in the heat andcooling treatment unit 43. As shown in FIG. 9, thegas nozzle 55 andarm 57 shown by the full line are disposed on thechill plate 64 side. - According to such a structure, as in S4 in FIG. 8 explained above, the
gas nozzle 55 is moved to a position above the wafer W after cooling treatment, and theprotective film 61 can be formed immediately. Further, as shown in FIG. 10, it is suitable that after heat treatment (S2 in FIG. 10), thegas nozzle 55 is moved and that theprotective film 61 is formed on the surface of the resistfilm 60 while the wafer W is cooled (S3 in FIG. 10). - Furthermore, as shown in the two-
dot chain lines 55′ and 57′ in FIG. 9, thegas nozzle 55 and thearm 57 may be also disposed on thehot plate 63 side. In this case, as shown in FIG. 11, it is suitable that after heat treatment (S2 in FIG. 11), thegas nozzle 55 is moved, theprotective film 61 is formed on the surface of the resist film 60 (S3 in FIG. 11), and that thereafter cooling treatment (S4 in FIG. 11) and exposure processing (S5 in FIG. 11) are continuously performed. - Moreover, as shown in FIG. 12, it is suitable that the
gas nozzle 55 is moved and that theprotective film 61 is formed on the surface of the resistfilm 60 during heat treatment (S2 in FIG. 12). As a result, the protective gas is supplied from a relatively early stage, which makes it possible to form theprotective film 60 on the wafer W before the adhesion of impurities such as oxygen and ozone. Basically, it is desirable to form theprotective film 61 on the surface of the resistfilm 60 after the solvent in the resist solution is fully vaporized by heating. - In order to prevent the adhesion of impurities more certainly, for example, as shown in FIG. 13,
gas supply units cassette station 2, theprocessing station 3, and theinterface section 4, andexhaust pipes - The
gas supply units - Incidentally, although the embodiment explained above relates to the coating and developing treatment system for the wafer W in photolithography of the semiconductor wafer device fabrication process, the present invention can be applied to a coating and developing treatment system for substrates other than a semiconductor wafer, for example; an LCD substrate.
Claims (10)
1. A method for performing coating and developing treatment for a substrate, comprising the steps of:
supplying a coating solution to the substrate to form a coating film on the substrate;
performing heat treatment for the substrate on which the coating film is formed;
cooling the substrate after the heat treatment;
performing exposure processing for the coating film formed on the substrate; and
developing the substrate after the exposure processing,
said method, further comprising the step of:
supplying a treatment gas to form a treatment film on a surface of the coating film after said step of forming the coating film and before said step of performing the exposure processing for the substrate.
2. A method as set forth in claim 1 ,
wherein said step of supplying the treatment gas to form the treatment film on the surface of the coating film is performed after said step of cooling the substrate after the heat treatment.
3. A method as set forth in claim 1 ,
wherein said step of supplying the treatment gas to form the treatment film on the surface of the coating film is performed during said step of cooling the substrate after the heat treatment.
4. A method as set forth in claim 1 ,
wherein said step of supplying the treatment gas to form the treatment film on the surface of the coating film is performed after said step of performing the heat treatment.
5. A method as set forth in claim 1 ,
wherein said step of supplying the treatment gas to form the treatment film on the surface of the coating film is performed during said step of performing the heat treatment.
6. A method as set forth in claim 1 ,
wherein the treatment gas is a gas which reduces surface energy of the coating film.
7. A method as set forth in claim 6 ,
wherein the gas is a gas which makes the surface of the coating film hydrophobic.
8. A method as set forth in claim 6 ,
wherein the gas is a fluorine series gas.
9. A coating and developing treatment system for performing coating and developing treatment for a substrate, comprising:
a coating treatment unit for forming a coating film on the substrate;
a developing treatment unit for developing the substrate;
a thermal treatment unit for performing thermal treatment for the substrate; and
a treatment gas supply unit for supplying a treatment gas to the coating film formed on the substrate to form a treatment film on a surface of the coating film.
10. A system as set forth in claim 9 ,
wherein said thermal treatment unit includes said treatment gas supply unit.
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US10/354,079 US20030119333A1 (en) | 2000-05-10 | 2003-01-30 | Method and system for coating and developing |
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JP2000137498A JP3648129B2 (en) | 2000-05-10 | 2000-05-10 | Coating development processing method and coating development processing system |
JP2000-137498 | 2000-05-10 | ||
US09/851,134 US6518199B2 (en) | 2000-05-10 | 2001-05-09 | Method and system for coating and developing |
US10/354,079 US20030119333A1 (en) | 2000-05-10 | 2003-01-30 | Method and system for coating and developing |
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US09/851,134 Continuation US6518199B2 (en) | 2000-05-10 | 2001-05-09 | Method and system for coating and developing |
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US09/851,134 Expired - Fee Related US6518199B2 (en) | 2000-05-10 | 2001-05-09 | Method and system for coating and developing |
US10/309,273 Expired - Fee Related US6884298B2 (en) | 2000-05-10 | 2002-12-04 | Method and system for coating and developing |
US10/354,079 Abandoned US20030119333A1 (en) | 2000-05-10 | 2003-01-30 | Method and system for coating and developing |
Family Applications Before (2)
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US09/851,134 Expired - Fee Related US6518199B2 (en) | 2000-05-10 | 2001-05-09 | Method and system for coating and developing |
US10/309,273 Expired - Fee Related US6884298B2 (en) | 2000-05-10 | 2002-12-04 | Method and system for coating and developing |
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US (3) | US6518199B2 (en) |
JP (1) | JP3648129B2 (en) |
KR (1) | KR100697939B1 (en) |
CN (1) | CN1218221C (en) |
SG (1) | SG106608A1 (en) |
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JP4657940B2 (en) * | 2006-02-10 | 2011-03-23 | 東京エレクトロン株式会社 | Substrate processing system |
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CN101794710B (en) * | 2009-01-30 | 2012-10-03 | 细美事有限公司 | Method and system for treating substrate |
KR20160045389A (en) | 2014-10-17 | 2016-04-27 | 창원대학교 산학협력단 | Fabricating method of transparent electrode using multilayered thin film consist of SnO2 and Zn and transparent electrode the same |
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Also Published As
Publication number | Publication date |
---|---|
JP2001319862A (en) | 2001-11-16 |
US6884298B2 (en) | 2005-04-26 |
US20020006737A1 (en) | 2002-01-17 |
KR100697939B1 (en) | 2007-03-20 |
JP3648129B2 (en) | 2005-05-18 |
SG106608A1 (en) | 2004-10-29 |
TWI227507B (en) | 2005-02-01 |
US6518199B2 (en) | 2003-02-11 |
CN1218221C (en) | 2005-09-07 |
KR20010103664A (en) | 2001-11-23 |
US20030079687A1 (en) | 2003-05-01 |
CN1322969A (en) | 2001-11-21 |
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