US20030080404A1 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
US20030080404A1
US20030080404A1 US10/283,571 US28357102A US2003080404A1 US 20030080404 A1 US20030080404 A1 US 20030080404A1 US 28357102 A US28357102 A US 28357102A US 2003080404 A1 US2003080404 A1 US 2003080404A1
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Prior art keywords
package
thermoplastic resin
housing
fin
melting point
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US10/283,571
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Masaya Tajima
Masaru Horibe
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Tokai Rika Co Ltd
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Tokai Rika Co Ltd
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Assigned to KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO reassignment KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HORIBE, MASARU, TAJIMA, MASAYA
Publication of US20030080404A1 publication Critical patent/US20030080404A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the device.
  • a typical semiconductor device has a plastic package for enveloping the housing to improve the moisture resistance.
  • the housing is generally formed by insert molding a thermoplastic resin.
  • the package is not adhered to the housing, which creates a gap between the package and the housing.
  • a gap between the package and the housing allows moisture to enter the interior. The moisture resistance of the device is there not satisfactory.
  • the package and the housing are required to have a high heat resistance, the types of resin that can be used for the package and the housing are limited. It is therefore desired that the adherent between the package and the housing be improved without depending on the types of the resins for the package and the housing.
  • a semiconductor device has a package for sealing a semiconductor chip and a housing for enveloping the package.
  • the package is formed with a first thermoplastic resin and has a fin.
  • the housing is formed with a second thermoplastic resin through insert molding. The melting point of the second thermoplastic resin is higher than the melting point of the first thermoplastic resin.
  • a further perspective of the present invention is a method for manufacturing a semiconductor device.
  • a package is molded with a first thermoplastic resin to seal a semiconductor chip.
  • the molded package has a fin.
  • a housing is insert molded with a second thermoplastic resin to envelop the package.
  • the melting point of the second thermoplastic resin is higher than the melting point of the first thermoplastic resin.
  • the housing is insert molded by filling a mold in which the package is placed with the molten second thermoplastic resin. The heat of the filling second thermoplastic resin melts the fin of the package.
  • FIG. 1 is a perspective view illustrating a semiconductor device according to one embodiment of the present invention
  • FIG. 2 is a plan view illustrating a lead frame
  • FIG. 3 is a perspective view illustrating the lower half of a mold used for molding a package, when the lead frame of FIG. 2 is placed on the half;
  • FIG. 4 is a cross-sectional view illustrating a mold in a process of insert molding a package
  • FIG. 5( a ) is plan view showing the lead frame of FIG. 2 on which a package is formed;
  • FIG. 5( b ) is a cross-sectional view taken along line 5 b - 5 b of FIG. 5( a );
  • FIG. 6 is a cross-sectional view illustrating a mold in a process of insert molding a housing.
  • FIGS. 1 to 6 One embodiment according to the present invention will now be described with reference to FIGS. 1 to 6 .
  • a semiconductor device 11 includes a rectangular parallelepiped package 13 made of liquid crystal polymer (LCP).
  • a pair of plate-like lead terminals 14 a extend from one of the four sides of the package 13 .
  • the entire package 13 is enveloped with a substantially rectangular parallelepiped housing 12 made of polyphenylene sulfide (PPS).
  • PPS polyphenylene sulfide
  • the package 13 has a first fin 13 a and two second fins 13 b .
  • the first and second fins 13 a , 13 b surround the entire circumference of the package 13 .
  • the first fin 13 a extends along the four sides of the package 13 and is located in the same plane as the lead terminals 14 a .
  • the thickness of the first fin 13 a is substantially the same as that of the lead terminals 14 a . In this embodiment, the thickness of the first fin 13 a is 0.25 mm to 0.4 mm.
  • the second fins 13 b coat the proximal portions of the lead terminals 14 a . In this embodiment, the thickness of the second fins 13 b is approximately 0.2 mm.
  • FIG. 2 illustrates a lead frame 14 used for manufacturing the package 13 .
  • the lead frame 14 includes the parallel lead terminals 14 a .
  • An inner lead portion 14 b extends from the proximal end (upper end as viewed in FIG. 2) of each lead terminal 14 a .
  • a first inner lead portion 14 b extends from the first lead terminal 14 a (left lead terminal 14 a as viewed in FIG. 2).
  • the first inner lead portion 14 b has a substantially rectangular island 14 c .
  • a substantially rectangular semiconductor chip 15 is mounted on the island 14 c .
  • An electrode pad 15 a is located on the semiconductor chip 15 .
  • a second inner lead portion 14 b which extends from the second lead terminal 14 a (right lead terminal 14 a as viewed in FIG. 2), is electrically connected to the electrode pad 15 a with a wire 16 .
  • a pair of frame portions 14 d are located parallel to and outward of the lead terminals 14 a .
  • a pair of carrier portions 14 e are connected to the ends of the frame portions 14 d .
  • the distal end of each lead terminal 14 a (lower end as viewed in FIG. 2) is connected to one of the carrier portions 14 e .
  • the lead terminals 14 a are connected with a tie bar 14 f .
  • each lead terminal 14 a and the adjacent frame portion 14 d are connected with a tie bar 14 f.
  • FIG. 4 illustrates a mold 22 used for molding the package 13 .
  • the mold 22 has an upper half 20 and a lower half 21 .
  • a recess 20 c is formed in the upper half 20 .
  • a recess 21 c is formed in the lower half 21 .
  • the recesses 20 c , 21 c define a cavity 23 for forming the package 13 .
  • Grooves 20 d for forming the second fins 13 b are formed in the upper half 20 .
  • a gate 20 b communicated with the recess 20 c is formed in the upper half 20 . Except for the recess 20 c and the grooves 20 d , the lower face of the upper half 20 is formed flat.
  • a frame recess 21 a is formed in the lower half 21 .
  • the frame recess 21 a corresponds to the outline of the lead frame 14 .
  • Grooves 21 d for forming the second fins 13 b are also formed in the lower half 21 . Except for the recess 21 c , the frame recess 21 a , and the grooves 21 d , the upper face of the lower half 21 is formed flat.
  • FIG. 6 illustrates a mold 32 used for molding the housing 12 .
  • the mold 32 has an upper half 30 and a lower half 31 .
  • a recess 30 c is formed in the upper half 30 .
  • a recess 31 c is formed in the lower half 31 .
  • the recesses 30 c , 31 c define a cavity 33 for forming the housing 12 .
  • the cavity 33 is sufficiently large to accommodate the package 13 , the first fin 13 a , and the second fins 13 b .
  • a gate 30 b communicated with the recess 30 c is formed in the upper half 30 . Except for the recess 30 c , the lower face of the upper half 30 is formed flat.
  • Terminal recesses 31 a are formed in the lower half 31 .
  • the terminal recesses 31 a correspond to the outlines of the lead terminals 14 a . Except for the recess 31 c and the terminal recesses 31 a , the upper face of the lower half 31 is formed flat.
  • a metal plate is pressed to form the lead frame 14 .
  • the semiconductor chip 15 is placed on the island 14 c of the lead frame 14 .
  • the electrode pad 15 a of the semiconductor chip 15 is electrically connected with the second inner lead portion 14 b with the wire 16 .
  • the package 13 is formed through insert molding to seal the semiconductor chip 15 .
  • the lead frame 14 is placed in the frame recess 21 a of the lower half 21 (see FIG. 3). Thereafter, the upper half 20 and the lower half 21 are put together. This creates a gap 24 between the cavity 23 and the frame portions 14 d , between the cavity and one of the carrier portions 14 e , and between the cavity 23 and the tie bar 14 f (see FIGS. 3 and 4).
  • the gap 24 is a space for forming the first fin 13 a .
  • molten liquid crystal polymer is injected through the gate 20 b to fill the cavity 23 , the grooves 20 d , 21 d , and the gap 24 .
  • the mold 22 is opened after the liquid crystal polymer is hardened to obtain the lead frame 14 with the package 13 (see FIGS. 5 ( a ) and 5 ( b )).
  • the melting point of the liquid crystal polymer used in this embodiment is 290° C.
  • the package 13 with a pair of the lead terminals 14 a extending from a side is formed.
  • the housing 12 is then formed through insert molding by using the package 13 . Specifically, the package 13 is placed in the lower half 31 such that the lead terminals 14 a fit in the terminal recesses 31 a . Thereafter, the upper half 30 and the lower half 31 are put together. Then, molten polyphenylene sulfide is injected through the gate 30 b to fill the cavity 33 (see FIG. 6). The mold 32 is opened after the polyphenylene sulfide is hardened to obtain the housing 12 enveloping the package 13 (see FIG. 1).
  • the melting point of the polyphenylene sulfide used in this embodiment is 340° C.
  • the melting point of the liquid crystal polymer forming the package 13 is lower than the melting point of the polyphenylene sulfide forming the housing 12 . Therefore, the heat of the molten polyphenylene sulfide injected into the mold 32 for molding the housing 12 melts the surface of the package 13 , particularly the first and second fins 13 a , 13 b . As a result, the package 13 is welded to the housing 12 by the heat. This improves the adherent between the package 13 and the housing 12 is improved, and therefore prevents gap from being created between the package 13 and the housing 12 . Accordingly, the moisture resistance of the semiconductor device 11 is improved.
  • the second fins 13 b coats the proximal portions of the lead terminals 14 a .
  • the second fins 13 b are melted when the housing 12 is molded and seals the joints between the proximal portions of the lead terminals 14 a and package 13 . This improves the moisture resistance of the semiconductor device 11 .
  • the second fins 13 b also prevent the lead terminals 14 a from establishing a short circuit.
  • the housing 12 is formed with polyphenylene sulfide having a high heat resistance. Therefore, compared to a semiconductor without the housing 12 , the semiconductor device 11 of this embodiment has an improved heat resistance.
  • the lead frame 14 has tie bars 14 f .
  • the tie bars 14 f prevent the fin 13 a from interfering with the lead terminals 14 a.
  • thermoplastic resin may be used for forming the package 13 as long as the melting point of the resin is lower than the thermoplastic resin used for forming the housing 12 .
  • a polyphenylene sulfide having a lower melting point than that of the polyphenylene sulfide forming the housing 12 may be used.
  • thermoplastic resin may be used for forming the housing 12 as long as the melting point of the resin is higher than the thermoplastic resin used for forming the package 13 .
  • polyamide PA
  • PA polyamide
  • the width and the thickness of the first fin 13 a may be changed as necessary.
  • the width and the thickness of the second fins 13 b may be changed as necessary.
  • the number of the lead terminals 14 a is not limited to two, but may be one or more than two.
  • the lead terminals 14 a may protrude from two or more sides of the housing 12 .
  • the circumference of the package 13 need not be entirely surrounded by the first and second fins 13 a , 13 b.
  • the first fin 13 a need not be located in the same plane as the lead terminals 14 a.
  • the shapes of the housing 12 and the package 13 are not limited to rectangular parallelepipeds, but may be changed as necessary.

Abstract

A semiconductor device has a package for sealing a semiconductor chip and a housing for enveloping the package. The package is formed with a thermoplastic resin and has fins. The housing is formed by insert molding a thermoplastic resin having a higher melting point than that of the resin forming the package. The semiconductor device improves adherent between the package and housing, thereby improving the moisture resistance.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to a semiconductor device and a method for manufacturing the device. [0001]
  • A typical semiconductor device has a plastic package for enveloping the housing to improve the moisture resistance. The housing is generally formed by insert molding a thermoplastic resin. [0002]
  • However, depending on the combination of the thermoplastic resin used for the package and the thermoplastic resin used for the housing, the package is not adhered to the housing, which creates a gap between the package and the housing. A gap between the package and the housing allows moisture to enter the interior. The moisture resistance of the device is there not satisfactory. [0003]
  • Since the package and the housing are required to have a high heat resistance, the types of resin that can be used for the package and the housing are limited. It is therefore desired that the adherent between the package and the housing be improved without depending on the types of the resins for the package and the housing. [0004]
    • SUMMARY OF THE INVENTION
  • Accordingly, it is an objective of the present invention to provide a semiconductor device and a method for manufacturing the device that improves the adherence between the package and the housing, and reliably improves the moisture resistance. [0005]
  • To achieve the foregoing and other objectives and in accordance with the purpose of the present invention, a semiconductor device is provided. The device has a package for sealing a semiconductor chip and a housing for enveloping the package. The package is formed with a first thermoplastic resin and has a fin. The housing is formed with a second thermoplastic resin through insert molding. The melting point of the second thermoplastic resin is higher than the melting point of the first thermoplastic resin. [0006]
  • A further perspective of the present invention is a method for manufacturing a semiconductor device. A package is molded with a first thermoplastic resin to seal a semiconductor chip. The molded package has a fin. A housing is insert molded with a second thermoplastic resin to envelop the package. The melting point of the second thermoplastic resin is higher than the melting point of the first thermoplastic resin. The housing is insert molded by filling a mold in which the package is placed with the molten second thermoplastic resin. The heat of the filling second thermoplastic resin melts the fin of the package. [0007]
  • Other aspects and advantages of the invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.[0008]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together with the accompanying drawings in which: [0009]
  • FIG. 1 is a perspective view illustrating a semiconductor device according to one embodiment of the present invention; [0010]
  • FIG. 2 is a plan view illustrating a lead frame; [0011]
  • FIG. 3 is a perspective view illustrating the lower half of a mold used for molding a package, when the lead frame of FIG. 2 is placed on the half; [0012]
  • FIG. 4 is a cross-sectional view illustrating a mold in a process of insert molding a package; [0013]
  • FIG. 5([0014] a) is plan view showing the lead frame of FIG. 2 on which a package is formed;
  • FIG. 5([0015] b) is a cross-sectional view taken along line 5 b-5 b of FIG. 5(a); and
  • FIG. 6 is a cross-sectional view illustrating a mold in a process of insert molding a housing.[0016]
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • One embodiment according to the present invention will now be described with reference to FIGS. [0017] 1 to 6.
  • As shown in FIG. 1, a [0018] semiconductor device 11 includes a rectangular parallelepiped package 13 made of liquid crystal polymer (LCP). A pair of plate-like lead terminals 14 a extend from one of the four sides of the package 13. The entire package 13 is enveloped with a substantially rectangular parallelepiped housing 12 made of polyphenylene sulfide (PPS). The lead terminals 14 a extend from one of the four sides of the housing 12.
  • The [0019] package 13 has a first fin 13 a and two second fins 13 b. The first and second fins 13 a, 13 b surround the entire circumference of the package 13. The first fin 13 a extends along the four sides of the package 13 and is located in the same plane as the lead terminals 14 a. The thickness of the first fin 13 a is substantially the same as that of the lead terminals 14 a. In this embodiment, the thickness of the first fin 13 a is 0.25 mm to 0.4 mm. The second fins 13 b coat the proximal portions of the lead terminals 14 a. In this embodiment, the thickness of the second fins 13 b is approximately 0.2 mm.
  • FIG. 2 illustrates a [0020] lead frame 14 used for manufacturing the package 13. As shown in FIG. 2, the lead frame 14 includes the parallel lead terminals 14 a. An inner lead portion 14 b extends from the proximal end (upper end as viewed in FIG. 2) of each lead terminal 14 a. Specifically, a first inner lead portion 14 b extends from the first lead terminal 14 a (left lead terminal 14 a as viewed in FIG. 2). The first inner lead portion 14 b has a substantially rectangular island 14 c. A substantially rectangular semiconductor chip 15 is mounted on the island 14 c. An electrode pad 15 a is located on the semiconductor chip 15. A second inner lead portion 14 b, which extends from the second lead terminal 14 a (right lead terminal 14 a as viewed in FIG. 2), is electrically connected to the electrode pad 15 a with a wire 16. A pair of frame portions 14 d are located parallel to and outward of the lead terminals 14 a. A pair of carrier portions 14 e are connected to the ends of the frame portions 14 d. The distal end of each lead terminal 14 a (lower end as viewed in FIG. 2) is connected to one of the carrier portions 14 e. The lead terminals 14 a are connected with a tie bar 14 f. Also, each lead terminal 14 a and the adjacent frame portion 14 d are connected with a tie bar 14 f.
  • FIG. 4 illustrates a mold [0021] 22 used for molding the package 13. As shown in FIG. 4, the mold 22 has an upper half 20 and a lower half 21. A recess 20 c is formed in the upper half 20. A recess 21 c is formed in the lower half 21. The recesses 20 c, 21 c define a cavity 23 for forming the package 13. Grooves 20 d for forming the second fins 13 b are formed in the upper half 20. Also, a gate 20 b communicated with the recess 20 c is formed in the upper half 20. Except for the recess 20 c and the grooves 20 d, the lower face of the upper half 20 is formed flat. A frame recess 21 a is formed in the lower half 21. The frame recess 21 a corresponds to the outline of the lead frame 14. Grooves 21 d for forming the second fins 13 b are also formed in the lower half 21. Except for the recess 21 c, the frame recess 21 a, and the grooves 21 d, the upper face of the lower half 21 is formed flat.
  • FIG. 6 illustrates a [0022] mold 32 used for molding the housing 12. As shown in FIG. 4, the mold 32 has an upper half 30 and a lower half 31. A recess 30 c is formed in the upper half 30. A recess 31 c is formed in the lower half 31. The recesses 30 c, 31 c define a cavity 33 for forming the housing 12. The cavity 33 is sufficiently large to accommodate the package 13, the first fin 13 a, and the second fins 13 b. A gate 30 b communicated with the recess 30 c is formed in the upper half 30. Except for the recess 30 c, the lower face of the upper half 30 is formed flat. Terminal recesses 31 a are formed in the lower half 31. The terminal recesses 31 a correspond to the outlines of the lead terminals 14 a. Except for the recess 31 c and the terminal recesses 31 a, the upper face of the lower half 31 is formed flat.
  • When manufacturing the [0023] semiconductor device 11, a metal plate is pressed to form the lead frame 14. Then, the semiconductor chip 15 is placed on the island 14 c of the lead frame 14. The electrode pad 15 a of the semiconductor chip 15 is electrically connected with the second inner lead portion 14 b with the wire 16.
  • Subsequently, the [0024] package 13 is formed through insert molding to seal the semiconductor chip 15. Specifically, the lead frame 14 is placed in the frame recess 21 a of the lower half 21 (see FIG. 3). Thereafter, the upper half 20 and the lower half 21 are put together. This creates a gap 24 between the cavity 23 and the frame portions 14 d, between the cavity and one of the carrier portions 14 e, and between the cavity 23 and the tie bar 14 f (see FIGS. 3 and 4). The gap 24 is a space for forming the first fin 13 a. In this state, molten liquid crystal polymer is injected through the gate 20 b to fill the cavity 23, the grooves 20 d, 21 d, and the gap 24. The mold 22 is opened after the liquid crystal polymer is hardened to obtain the lead frame 14 with the package 13 (see FIGS. 5(a) and 5(b)). The melting point of the liquid crystal polymer used in this embodiment is 290° C.
  • Then, unnecessary parts of the [0025] lead frame 14, or the frame portions 14 d, the carrier portions 14 e and the tie bars 14 f are removed by cutting. In this manner, the package 13 with a pair of the lead terminals 14 a extending from a side is formed. The housing 12 is then formed through insert molding by using the package 13. Specifically, the package 13 is placed in the lower half 31 such that the lead terminals 14 a fit in the terminal recesses 31 a. Thereafter, the upper half 30 and the lower half 31 are put together. Then, molten polyphenylene sulfide is injected through the gate 30 b to fill the cavity 33 (see FIG. 6). The mold 32 is opened after the polyphenylene sulfide is hardened to obtain the housing 12 enveloping the package 13 (see FIG. 1). The melting point of the polyphenylene sulfide used in this embodiment is 340° C.
  • This embodiment provides the following advantages. [0026]
  • The melting point of the liquid crystal polymer forming the [0027] package 13 is lower than the melting point of the polyphenylene sulfide forming the housing 12. Therefore, the heat of the molten polyphenylene sulfide injected into the mold 32 for molding the housing 12 melts the surface of the package 13, particularly the first and second fins 13 a, 13 b. As a result, the package 13 is welded to the housing 12 by the heat. This improves the adherent between the package 13 and the housing 12 is improved, and therefore prevents gap from being created between the package 13 and the housing 12. Accordingly, the moisture resistance of the semiconductor device 11 is improved.
  • The [0028] second fins 13 b coats the proximal portions of the lead terminals 14 a. The second fins 13 b are melted when the housing 12 is molded and seals the joints between the proximal portions of the lead terminals 14 a and package 13. This improves the moisture resistance of the semiconductor device 11. The second fins 13 b also prevent the lead terminals 14 a from establishing a short circuit.
  • The [0029] housing 12 is formed with polyphenylene sulfide having a high heat resistance. Therefore, compared to a semiconductor without the housing 12, the semiconductor device 11 of this embodiment has an improved heat resistance.
  • The [0030] lead frame 14 has tie bars 14 f. The tie bars 14 f prevent the fin 13 a from interfering with the lead terminals 14 a.
  • It should be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention. Particularly, it should be understood that the invention may be embodied in the following forms. [0031]
  • Any thermoplastic resin may be used for forming the [0032] package 13 as long as the melting point of the resin is lower than the thermoplastic resin used for forming the housing 12. For example, a polyphenylene sulfide having a lower melting point than that of the polyphenylene sulfide forming the housing 12 may be used.
  • Any thermoplastic resin may be used for forming the [0033] housing 12 as long as the melting point of the resin is higher than the thermoplastic resin used for forming the package 13. For example, polyamide (PA) may be used.
  • The width and the thickness of the [0034] first fin 13 a may be changed as necessary.
  • The width and the thickness of the [0035] second fins 13 b may be changed as necessary.
  • The number of the [0036] lead terminals 14 a is not limited to two, but may be one or more than two.
  • The [0037] lead terminals 14 a may protrude from two or more sides of the housing 12.
  • The circumference of the [0038] package 13 need not be entirely surrounded by the first and second fins 13 a, 13 b.
  • The [0039] first fin 13 a need not be located in the same plane as the lead terminals 14 a.
  • The shapes of the [0040] housing 12 and the package 13 are not limited to rectangular parallelepipeds, but may be changed as necessary.
  • Therefore, the present examples and embodiments are to be considered as illustrative and not restrictive and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims. [0041]

Claims (13)

1. A semiconductor device comprising:
a package for sealing a semiconductor chip, wherein the package is formed with a first thermoplastic resin and has a fin; and
a housing for enveloping the package, wherein the housing is formed with a second thermoplastic resin through insert molding, and wherein the melting point of the second thermoplastic resin is higher than the melting point of the first thermoplastic resin.
2. The device according to claim 1, wherein the fin is located in the same plane as a lead terminal extending from the package.
3. The device according to claim 1, wherein the fin coats the proximal portion of a lead terminal extending from the package.
4. The device according to claim 1, wherein the first thermoplastic resin is liquid crystal polymer.
5. The device according to claim 1, wherein the second thermoplastic resin is polyphenylene sulfide.
6. The device according to claim 1, wherein the fin surrounds the entire circumference of the package.
7. A method for manufacturing a semiconductor device, comprising:
molding a package with a first thermoplastic resin to seal a semiconductor chip, wherein the molded package has a fin; and
insert molding a housing with a second thermoplastic resin to envelop the package, wherein the melting point of the second thermoplastic resin is higher than the melting point of the first thermoplastic resin, wherein the housing is insert molded by filling a mold in which the package is placed with the molten second thermoplastic resin, and wherein the heat of the filling second thermoplastic resin melts the fin of the package.
8. The method according to claim 7, wherein the fin is located in the same plane as a lead terminal extending from the package.
9. The method according to claim 7, wherein the fin coats the proximal portion of a lead terminal extending from the package.
10. The method according to claim 7, wherein the first thermoplastic resin is liquid crystal polymer.
11. The method according to claim 7, wherein the second thermoplastic resin is polyphenylene sulfide.
12. The method according to claim 7, wherein the fin surrounds the entire circumference of the package.
13. A method for manufacturing a semiconductor device, comprising:
molding a package with liquid crystal polymer to seal a semiconductor chip, wherein the package is molded by filing a first mold in which the semiconductor chip and a lead terminal are placed with the molten liquid crystal polymer, and wherein the molded package has a fin located in the same plane as the lead terminal, and a fin coating the proximal portion of the lead terminal; and
insert molding a housing with polyphenylene sulfide to envelop the package, wherein the melting point of the polyphenylene sulfide is higher than the melting point of the liquid crystal polymer, wherein the housing is insert molded by filling a second mold in which the package is placed with the molten polyphenylene sulfide, and wherein the heat of the filling polyphenylene sulfide melts the fins of the package.
US10/283,571 2001-10-30 2002-10-30 Semiconductor device and manufacturing method thereof Abandoned US20030080404A1 (en)

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JP2001332600A JP2003133484A (en) 2001-10-30 2001-10-30 Semiconductor device and its manufacturing method

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JP2003133484A (en) 2003-05-09
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