US20030059960A1 - Methods of semiconductor processing - Google Patents
Methods of semiconductor processing Download PDFInfo
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- US20030059960A1 US20030059960A1 US10/282,724 US28272402A US2003059960A1 US 20030059960 A1 US20030059960 A1 US 20030059960A1 US 28272402 A US28272402 A US 28272402A US 2003059960 A1 US2003059960 A1 US 2003059960A1
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- Prior art keywords
- electronic device
- workpiece
- temperature sensing
- electrical interconnect
- sensing device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/026—Means for indicating or recording specially adapted for thermometers arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
- H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
- H01L2924/15156—Side view
Definitions
- the present invention relates to electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece.
- a substantially constant temperature across the surface of the wafers being processed because changes in temperature can influence device fabrication. Wafers of increased diameters and surface areas experience increased temperature fluctuations at various locations on the workpiece.
- a partial vacuum is typically used to pull small diameter wafers into direct thermal contact with a hot plate.
- Such processing methods facilitate substrate temperature control because the substrate temperature is closely associated to the temperature of the hot plate Fabrication of small sub-micron devices upon larger diameter semiconductor wafers or workpieces requires minimal backside contamination. As such, contact of the workpiece with a hot plate is not typically not possible.
- Such workpieces are processed in conventional operations upon spacers or pins that position the workpiece approximately 0.1 millimeters above the hot plate heating surface. Such spacing intermediate a chuck or hot plate and the workpiece results in substrate temperatures which can be influenced by the environment above the substrate. Inconsistencies in temperature across the surface of the workpiece often result.
- Absolute temperature and temperature uniformity of a workpiece are parameters which are closely monitored during wafer and workpiece fabrication to provide critical dimension (CD) control.
- Chemically amplified resists are utilized in deep ultraviolet (DUV) lithography in Is small micron geometries (eg., 0.25 microns and below). Chemically amplified resists are particularly temperature dependent further increasing the importance of temperature control and monitoring.
- Some thermal resist processing steps require process windows ranging from 1-2 degrees centigrade down to a few tenths of a degree centigrade. Meteorology that is four to ten times more precise than conventional process equipment may be required to provide thermal performance measurements to 0.1 degrees centigrade.
- One approach has disclosed the use of temperature sensors across a surface of the wafer to provide temperature mapping of the workpiece during processing. Platinum foil leads and copper leads are utilized to electrically connect the temperature sensors. With the use of numerous temperatures sensors across an entire workpiece surface, numerous wires are required for coupling and monitoring. Such numerous wired connections can break and/or adversely impact processing of the workpiece or the temperature measurements taken of the surface of the workpiece. Some temperature sensors require four leads per sensor further impacting the processing and temperature monitoring of the workpieces.
- the present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece.
- Exemplary electronic device workpieces include semiconductor wafers.
- One electronic device workpiece includes a substrate having an upper surface and a temperature sensing device borne by the substrate.
- the temperature sensing device can comprise a preexisting device. Alternatively, the temperature sensing device can be formed upon a surface of the electronic device workpiece.
- the temperature sensing device comprises a resistance temperature device (RTD) in one embodiment.
- RTD resistance temperature device
- a plurality of temperature sensing devices are provided in temperature sensing relation with the electronic device workpiece in an exemplary embodiment.
- An electrical interconnect is preferably provided upon the surface of the substrate.
- the electrical interconnect comprises a conductive trace in a preferred embodiment.
- the electrical interconnect is electrically coupled with the temperature sensing device.
- the electrical interconnect can be wire bonded to or physically coupled with the temperature sensing device.
- the electrical interconnect can be configured to couple the temperature sensing device with an edge of the electronic device workpiece.
- An interface can be provided to couple the electrical interconnects with external circuitry.
- Exemplary electrical circuitry includes a data gathering device, such as a digital computer.
- An isolator is formed intermediate the temperature sensing device and electrical interconnect, and the substrate of the electronic device workpiece in one embodiment.
- the isolator provides electrical isolation.
- An exemplary isolator comprises silicon dioxide.
- Temperature sensing devices are provided within a cavity formed within the substrate of the electronic device workpieces according to another embodiment.
- the cavity is preferably formed by an anisotropic etch forming sidewalls at an approximate angle of fifty-four degrees with respect to the surface of the substrate.
- temperature sensing devices are formed or positioned upon a surface of the electronic device workpiece.
- the electronic device workpiece comprises a calibration workpiece in one embodiment.
- the electronic device workpiece comprises a workpiece which undergoes processing from which subsequent devices are formed, such as a silicon wafer.
- FIG. 1 is an isometric view of an electronic device workpiece having a plurality of temperature sensing devices.
- FIG. 1A is an isometric view of an alternative electronic device workpiece.
- FIG. 1B is a cross-sectional view of one configuration of an interface of the electronic device workpiece.
- FIG. 2 is a cross-sectional view of a first embodiment of a temperature sensing device upon the electronic device workpiece.
- FIG. 2A is a cross-sectional view of an alternative configuration of an electrical connection coupled with the temperature sensing device shown in FIG. 2.
- FIG. 3 is a cross-sectional view of a second embodiment of a temperature sensing device upon the electronic device workpiece.
- FIG. 4 is an elevated plan view of the temperature sensing device shown in FIG. 3.
- FIG. 5 is a cross-sectional view of a temperature sensing device provided upon an upper surface of the electronic device workpiece.
- FIG. 6 is a cross-sectional view illustrating an electrical connection coupled with a temperature sensing device upon the electronic device workpiece.
- an electronic workpiece 10 is illustrated.
- Exemplary electronic device workpieces include a semiconductor wafer or a crystal mask substrate.
- electronic device workpiece 10 includes a substrate 11 comprising a semiconductive substrate.
- Substrate 11 can comprise silicon, silicon carbide and gallium nitride.
- electronic device workpiece 10 can comprise other substrates.
- electronic device workpiece 10 can comprise other components configured for application within an electronic or electrical device or configured for processing to form such components.
- Electronic device workpiece 10 is coupled with external circuitry 12 .
- the illustrated external circuitry 12 includes plural connections 14 and a resistance thermometer 16 .
- An interface 18 is provided in a preferred embodiment to provide convenient coupling of circuitry formed upon electronic device workpiece 10 and electrical connections 14 of circuitry 12 .
- External circuitry 12 can be implemented in other configurations.
- resistance thermometer 16 comprises a data gathering device in alternative embodiments.
- Connections 14 are configured to couple electronic device workpiece 10 with a digital computer configured to monitor process conditions including the temperature of electronic device workpiece 10 .
- External circuitry 12 includes communication devices in other embodiments of the invention to transmit process conditions.
- Electronic device workpiece 10 includes an upper surface 20 and lower surface 22 opposite upper surface 20 .
- Electronic device workpiece 10 additionally includes an edge 24 which is circular in the described embodiment.
- At least one temperature sensing device 30 is provided upon at least one surface of electronic device workpiece 10 .
- a plurality of temperature sensing devices 30 are provided upon electronic device workpiece 10 in a preferred embodiment.
- a plurality of temperature sensing devices 30 are provided upon or supported by upper surface 20 of electronic device workpiece 10 .
- Temperature sensing devices 30 are preferably borne by substrate 11 of electronic device workpiece 10 and may be formed upon lower surface 22 as well as upper surface 20 .
- temperature sensing devices 30 comprise resistance temperature devices (RTD). Resistance temperature devices provide contact temperature sensing in preferred modes of operation.
- resistance temperature devices can comprise a wire wound device that provides a linear resistance chance for a corresponding temperature change.
- the coefficient of temperature of resistance temperature devices is positive wherein the resistance through the resistance temperature device increases as temperature increases.
- Exemplary resistance temperature devices comprise sensitive materials which provide a plurality of resistances corresponding to a temperature profile.
- Resistance temperature devices can comprise platinum, polysilicon or other sensitive materials.
- temperature sensing devices 30 comprise diodes which provide a change in threshold voltage responsive to temperature changes. Such voltage changes are sufficient to enable monitoring of associated temperatures and extraction of temperature information.
- Other temperature sensing devices 30 comprise thermocouples which comprise two overlapping dissimilar metals to create a voltage producing junction which varies dependent upon temperature exposure.
- Further temperature sensing devices 30 include a thermistor which comprises a mixture of metal oxides and encapsulated in an isolator such as epoxy or glass.
- temperature sensing devices 30 can be fabricated or formed upon the electronic device workpiece 10 or comprise preexisting devices which are positioned and adhered upon or attached to the electronic device workpiece 10 . Fabricated temperature sensing devices 30 are available from Watlow Electrical Manufacturing Company of St. Louis, Mo.
- Electrical interconnects 40 , 41 are provided to electrically couple with individual temperature sensing devices 30 .
- electrical interconnects 40 , 41 are formed upon upper surface 20 of substrate 11 .
- individual electrical interconnects 40 , 41 are individually coupled with respective temperature sensing devices 30 .
- Electrical interconnects 40 , 41 are formed upon upper surface 20 of substrate 11 in one embodiment. Such formed electrical interconnects 40 preferably comprise conductive traces. The conductive traces can comprise aluminum or other conductive materials. The conductive traces are formed by sputtering in one fabrication method. Electrical interconnects 40 , 41 can comprise other conductors in other embodiments. Electrical interconnects 40 , 41 electrically couple individual temperature sensing devices 30 with edge 22 of electronic device workpiece 10 .
- An isolator (not shown in FIG. 1) is provided intermediate upper surface 20 and temperature sensing devices 30 and electrical interconnects 40 , 41 .
- the isolator comprises silicon dioxide or other suitable insulative material.
- Interface connection 18 is provided in electrical connection with electrical interconnects 40 , 41 .
- the depicted interface connection 18 is located proximate to edge 22 of electronic device workpiece 10 .
- Interface connection 18 is configured to provide electrical coupling of electrical interconnects 40 , 41 and the respective temperature sensing devices 30 with circuitry 12 external of electronic device workpiece 10 .
- Exemplary interface connection configurations include tab tape, adapter, flip chip connections, wire bond connections, and conductive adhesives.
- Interface connection 18 can include other configurations in accordance with the present invention.
- Connection 18 a provides electrical coupling of temperature sensing devices 30 with electrical circuitry 12 .
- the depicted interface connection 18 a is defined by edge 24 of workpiece 10 .
- FIG. 1B yet another interface connection 18 b is illustrated.
- the depicted interface connection 18 b comprises respective mating plug and receptacle components 13 , 15 .
- Plug component 13 is coupled with wires 14 of external circuitry 12 (although three wires 14 are shown in FIG. 1B, additonal wires of circuitry 12 can be coupled with plug 13 ).
- Plug 13 is configured for removable coupling with component 15 .
- Receptacle component 15 is configured to receive plug 13 and for attachment to electrical interconnections 40 , 41 (only one interconnection 40 is shown in FIG. 1B). When mated, components 13 , 15 couple external circuitry 12 with respective interconnections 40 , 41 .
- a plurality of interconnects 7 are used in the depicted embodiment to couple internal electrical connections 17 of components 13 , 15 with interconnections 40 , 41 .
- Exemplary interconnects 7 include solder, solder balls, conductive epoxy, etc.
- electronic device workpiece 10 includes a cavity 50 formed within substrate 11 .
- Cavity 50 includes plural sloping sidewalls 52 , 53 and a bottom wall 54 .
- Surface 20 of substrate 11 includes sidewalls 52 , 53 , and bottom wall 54 .
- An exemplary cavity 50 has a depth of approximately 200 microns and bottom wall 54 has a width of approximately 300 microns.
- Cavity 50 is preferably formed by an anisotropic etch.
- An exemplary anisotropic etch includes potassium hydroxide (KOH). Utilization of an anisotropic etch provides sloping sidewalls 52 , 53 within cavity 50 . Provision of sloping sidewalls 52 , 53 facilitates fabrication of conductors 40 , 41 over surface 20 and isolator 56 , and sidewalls 52 , 53 of cavity 50 . Sidewalls 52 , 53 are preferably sloped at an angle within the approximate range of 50 to 60 degrees with respect to upper surface 20 of substrate 11 . The most preferred embodiment provides sidewalls 52 , 53 having an angle of 54 degrees with respect to upper surface 20 .
- Cavity 50 is formed by an isotropic etch in an alternative embodiment. Wire bonded connections are preferably utilized in such an embodiment to provide electrical coupling of interconnects 40 , 41 upon surface 20 with the temperature sensing device 30 provided within cavity 50 .
- One temperature sensing device 30 is shown borne by substrate 11 of electronic device workpiece 10 .
- An isolation layer 56 is shown over electronic device workpiece 10 .
- Isolator 56 is formed over upper surface 20 of substrate 11 including sidewalls 52 , 53 and bottom wall 54 of cavity 50 .
- a preexisting temperature sensing device 30 is positioned and adhered within cavity 50 in the depicted embodiment of FIG. 2. Temperature sensing device 30 is adhered using standard thermal conductive epoxies or adhesives in one embodiment. A temperature sensing device is formed within cavity 50 in other embodiments described below. Bottom wall 54 supports temperature sensing device 30 in the depicted embodiment. Temperature sensing device 30 is supported by upper surface 20 of substrate 11 in other embodiments.
- Electric interconnects or conductive traces 40 , 41 are formed over upper surface 20 and sidewall 52 in the depicted embodiment (only conductive trace 40 is shown in FIG. 2).
- the illustrated electrical interconnect 40 is provided over a portion of bottom wall 54 .
- An additional electrical connection 58 is utilized to electrically couple temperature sensing device 30 with conductive trace or electrical interconnect 40 .
- electrical connection 58 comprises a wire connection, such as that formed by wire bonding. Other forms of connections such as tab tape and flip chip connections can also be employed.
- Connection 58 is preferably encapsulated to minimize damage to connection 58 .
- a dispensed epoxy 57 is utilized in one embodiment to encapsulate connection 58 . As shown, it is preferred to leave a portion of the area adjacent temperature sensing device 30 free of epoxy for accurate temperature sensing.
- contacting of conductive trace 40 with temperature sensing device 30 is sufficient to electrically couple trace 40 and temperature sensing device 30 .
- connection 58 is used to couple temperature sensing device 30 with the depicted interconnection 40 at a location upon interconnection 40 outside of cavity 50 .
- Temperature sensing device 30 is preferably provided upon electronic device workpiece 10 in a temperature sensing relation with respect to electronic device workpiece 10 .
- Temperature sensing device 30 is configured to sense the temperature of an area of electronic device workpiece 10 immediately adjacent the attached device 30 .
- the resistance of temperature sensing device 30 changes corresponding to changes in temperature. Such changes in resistance change the voltage drop across temperature sensing device 30 thereby changing signals (for example the currents of the signals) passing through temperature sensing device 30 .
- the generated signals correspond to the temperature of the area of the electronic device workpiece 10 being sensed.
- Electrical interconnects 40 , 41 conduct the generated signals to interface connection 18 and external circuitry 12 in the preferred embodiment.
- Exemplary external circuitry 12 contains devices that convert the received signals to localized temperatures at specific points.
- a temperature sensing device 30 a is shown formed within cavity 50 of substrate 11 .
- Electronic device workpiece 10 includes a conductive trace 40 extending upon isolator 56 over a portion of upper surface 20 , down sidewall 52 and across bottom wall 54 of cavity 50 .
- Another conductive trace 41 is coupled with temperature sensing device 30 a as shown in FIG. 4.
- Temperature sensing device 30 a is shown formed within cavity 50 upon conductor 40 .
- the illustrated temperature sensing device 30 a is a resistance temperature device.
- the resistance temperature device comprises a conductive material such as polysilicon or metals such as platinum. Other materials can also be utilized. Similarly, a combination of metals and polysilicon can also be utilized.
- temperature sensing device 30 a comprises polysilicon deposited by chemical vapor deposition (CVD). The deposited polysilicon can thereafter be doped by ion implantation or diffusion to provide a desired resistivity. Alternatively, doped polysilicon using PECVD techniques can also be deposited. The polysilicon resistance temperature device can thereafter be patterned such as by etching. Electrical interconnect 40 and temperature sensing devices 30 can be formed with thin film processing techniques or thick film techniques using a stencil.
- the illustrated RTD temperature sensing device 30 a comprises polysilicon patterned in an exemplary serpentine configuration. Temperature sensing device 30 a can be configured in other shapes and formats in other embodiments. Temperature sensing device 30 a is formed upon bottom wall 54 of cavity 50 . Opposing ends of temperature sensing device 30 a are individually coupled with plural electrical interconnects 40 , 41 . An electrical signal entering via one of electrical interconnects 40 , 41 passes through temperature sensing device 30 a and exits through the opposite electrical interconnect. A change of temperature at bottom wall 54 results in a change in resistance of temperature sensing device 30 a .
- Electronic interconnects 40 , 41 are configured to conduct electrical signals which indicate a temperature of electronic device workpiece 10 .
- Temperature sensing devices within cavities of the electronic device workpiece enables temperature mapping of the workpiece in three dimensions. Temperature sensing devices can be provided both on the surfaces of an electronic device workpiece and within cavities formed within the workpiece. Temperature sensing devices upon one or both surfaces of the electronic device workpiece enable temperature mapping in x-y directions upon the respective surfaces of the workpiece. Providing temperature sensing devices within cavities of the workpiece enable temperature sensing within the z direction intermediate the surfaces of the workpiece.
- temperature sensing device 30 a is formed over surface 20 of substrate 11 of electronic device workpiece 10 and isolator layer 56 .
- at least a portion of temperature sensing device 30 a is formed or positioned upon electrical interconnect 40 .
- temperature sensing device 30 a is formed by chemical vapor deposition (CVD).
- CVD chemical vapor deposition
- Isolator layer 56 is provided intermediate electrical interconnect 40 and upper surface 20 of substrate 11 .
- FIG. 6 another construction for providing electrical connection with temperature sensing device 30 a is shown. Upper surface 20 and lower surface 22 of substrate 11 are shown in FIG. 6. Electrical interconnect 40 is formed upon upper surface 20 as previously described.
- the illustrated electronic device workpiece 10 also includes a via 44 formed within substrate 11 .
- Via 44 enables electrical connection of upper surface 20 with lower surface 22 .
- another electrical interconnection 42 is formed upon lower surface 22 of substrate 11 .
- Via 44 is also plugged with a conductive material forming electrical interconnection 45 providing coupling of interconnections 40 , 42 .
- An insulating layer 56 a is preferably formed within via 44 to provide insulation of interconnection 45 .
- Electrical interconnection 42 comprises a pad in the illustrated configuration. Alternatively, electrical connection 42 can be formed to extend to an edge of electronic device workpiece 10 . Electrical interconnection 42 can be coupled with external circuitry (not shown in FIG. 6) enabling monitoring of temperatures of electronic device workpiece 10 .
- the described electronic device workpiece is configured and utilized as a calibration wafer.
- Such calibration wafers are typically placed within a workpiece processing chamber and the chamber can be brought up to subject processing conditions at typical elevated temperatures.
- the temperature at various positions upon electronic device workpieces to be processed can be determined.
- data provided by temperature sensing devices located upon the electronic device workpiece can be utilized to provide temperature control and modify some aspect of the processing chamber.
- the processing chamber is preferably modified to provide a uniform temperature distribution across the entire surface of the electronic device workpiece being processed. In other processes, the processing chamber is modified to provide varied temperatures across a surface of the workpiece.
- the modifications can be made with the calibration workpiece in place within the processing chamber.
- the effect of such modifications can be verified by the temperature sensing devices and associated temperature monitoring equipment coupled with the devices. Thereafter, the calibration workpiece is removed and the equipment having been desirably calibrated can be utilized to process other electronic device workpieces in mass.
- temperature sensing devices are provided upon an electronic device workpiece which will actually be processed and subsequently utilized to fabricate integrated circuitry or other components.
- the temperature sensing devices can be fabricated upon the electronic device workpiece during the fabrication of the electronic device workpiece.
- preexisting or prefabricated temperature sensing devices are positioned and adhered upon the electronic device workpiece.
Abstract
The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.
Description
- The present invention relates to electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece.
- It is preferred in the semiconductor and related arts to utilize large wafers for fabrication of integrated circuits and other devices. Large wafers are preferred inasmuch as an increased number of chips can be fabricated from larger workpieces. As the size of the wafers continues to increase as processing techniques are improved, additional processing obstacles are presented.
- For example, it is typically preferred to provide a substantially constant temperature across the surface of the wafers being processed because changes in temperature can influence device fabrication. Wafers of increased diameters and surface areas experience increased temperature fluctuations at various locations on the workpiece. In particular, a partial vacuum is typically used to pull small diameter wafers into direct thermal contact with a hot plate. Such processing methods facilitate substrate temperature control because the substrate temperature is closely associated to the temperature of the hot plate Fabrication of small sub-micron devices upon larger diameter semiconductor wafers or workpieces requires minimal backside contamination. As such, contact of the workpiece with a hot plate is not typically not possible. Such workpieces are processed in conventional operations upon spacers or pins that position the workpiece approximately 0.1 millimeters above the hot plate heating surface. Such spacing intermediate a chuck or hot plate and the workpiece results in substrate temperatures which can be influenced by the environment above the substrate. Inconsistencies in temperature across the surface of the workpiece often result.
- Absolute temperature and temperature uniformity of a workpiece are parameters which are closely monitored during wafer and workpiece fabrication to provide critical dimension (CD) control. Chemically amplified resists are utilized in deep ultraviolet (DUV) lithography in Is small micron geometries (eg., 0.25 microns and below). Chemically amplified resists are particularly temperature dependent further increasing the importance of temperature control and monitoring. Some thermal resist processing steps require process windows ranging from 1-2 degrees centigrade down to a few tenths of a degree centigrade. Meteorology that is four to ten times more precise than conventional process equipment may be required to provide thermal performance measurements to 0.1 degrees centigrade.
- One approach has disclosed the use of temperature sensors across a surface of the wafer to provide temperature mapping of the workpiece during processing. Platinum foil leads and copper leads are utilized to electrically connect the temperature sensors. With the use of numerous temperatures sensors across an entire workpiece surface, numerous wires are required for coupling and monitoring. Such numerous wired connections can break and/or adversely impact processing of the workpiece or the temperature measurements taken of the surface of the workpiece. Some temperature sensors require four leads per sensor further impacting the processing and temperature monitoring of the workpieces.
- Therefore, there exists a need to provide improved temperature monitoring of workpieces which overcomes the problems experienced in the prior art.
- The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. Exemplary electronic device workpieces include semiconductor wafers.
- One electronic device workpiece includes a substrate having an upper surface and a temperature sensing device borne by the substrate. The temperature sensing device can comprise a preexisting device. Alternatively, the temperature sensing device can be formed upon a surface of the electronic device workpiece. The temperature sensing device comprises a resistance temperature device (RTD) in one embodiment. A plurality of temperature sensing devices are provided in temperature sensing relation with the electronic device workpiece in an exemplary embodiment.
- An electrical interconnect is preferably provided upon the surface of the substrate. The electrical interconnect comprises a conductive trace in a preferred embodiment. The electrical interconnect is electrically coupled with the temperature sensing device. The electrical interconnect can be wire bonded to or physically coupled with the temperature sensing device. The electrical interconnect can be configured to couple the temperature sensing device with an edge of the electronic device workpiece. An interface can be provided to couple the electrical interconnects with external circuitry. Exemplary electrical circuitry includes a data gathering device, such as a digital computer.
- An isolator is formed intermediate the temperature sensing device and electrical interconnect, and the substrate of the electronic device workpiece in one embodiment. The isolator provides electrical isolation. An exemplary isolator comprises silicon dioxide.
- Temperature sensing devices are provided within a cavity formed within the substrate of the electronic device workpieces according to another embodiment. The cavity is preferably formed by an anisotropic etch forming sidewalls at an approximate angle of fifty-four degrees with respect to the surface of the substrate. Alternatively, temperature sensing devices are formed or positioned upon a surface of the electronic device workpiece.
- The electronic device workpiece comprises a calibration workpiece in one embodiment. In another embodiment, the electronic device workpiece comprises a workpiece which undergoes processing from which subsequent devices are formed, such as a silicon wafer.
- Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
- FIG. 1 is an isometric view of an electronic device workpiece having a plurality of temperature sensing devices.
- FIG. 1A is an isometric view of an alternative electronic device workpiece.
- FIG. 1B is a cross-sectional view of one configuration of an interface of the electronic device workpiece.
- FIG. 2 is a cross-sectional view of a first embodiment of a temperature sensing device upon the electronic device workpiece.
- FIG. 2A is a cross-sectional view of an alternative configuration of an electrical connection coupled with the temperature sensing device shown in FIG. 2.
- FIG. 3 is a cross-sectional view of a second embodiment of a temperature sensing device upon the electronic device workpiece.
- FIG. 4 is an elevated plan view of the temperature sensing device shown in FIG. 3.
- FIG. 5 is a cross-sectional view of a temperature sensing device provided upon an upper surface of the electronic device workpiece.
- FIG. 6 is a cross-sectional view illustrating an electrical connection coupled with a temperature sensing device upon the electronic device workpiece.
- This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (
Article 1, Section 8). - Referring to FIG. 1, an
electronic workpiece 10 is illustrated. Exemplary electronic device workpieces include a semiconductor wafer or a crystal mask substrate. In one embodiment,electronic device workpiece 10 includes asubstrate 11 comprising a semiconductive substrate.Substrate 11 can comprise silicon, silicon carbide and gallium nitride. Alternatively,electronic device workpiece 10 can comprise other substrates. In particular,electronic device workpiece 10 can comprise other components configured for application within an electronic or electrical device or configured for processing to form such components. -
Electronic device workpiece 10 is coupled withexternal circuitry 12. The illustratedexternal circuitry 12 includesplural connections 14 and aresistance thermometer 16. Aninterface 18 is provided in a preferred embodiment to provide convenient coupling of circuitry formed uponelectronic device workpiece 10 andelectrical connections 14 ofcircuitry 12. -
External circuitry 12 can be implemented in other configurations. For example,resistance thermometer 16 comprises a data gathering device in alternative embodiments.Connections 14 are configured to coupleelectronic device workpiece 10 with a digital computer configured to monitor process conditions including the temperature ofelectronic device workpiece 10.External circuitry 12 includes communication devices in other embodiments of the invention to transmit process conditions. -
Electronic device workpiece 10 includes anupper surface 20 andlower surface 22 oppositeupper surface 20.Electronic device workpiece 10 additionally includes anedge 24 which is circular in the described embodiment. - According to the present invention, at least one
temperature sensing device 30 is provided upon at least one surface ofelectronic device workpiece 10. A plurality oftemperature sensing devices 30 are provided uponelectronic device workpiece 10 in a preferred embodiment. In the illustrated embodiment, a plurality oftemperature sensing devices 30 are provided upon or supported byupper surface 20 ofelectronic device workpiece 10.Temperature sensing devices 30 are preferably borne bysubstrate 11 ofelectronic device workpiece 10 and may be formed uponlower surface 22 as well asupper surface 20. - In one embodiment,
temperature sensing devices 30 comprise resistance temperature devices (RTD). Resistance temperature devices provide contact temperature sensing in preferred modes of operation. In particular, resistance temperature devices can comprise a wire wound device that provides a linear resistance chance for a corresponding temperature change. Typically, the coefficient of temperature of resistance temperature devices is positive wherein the resistance through the resistance temperature device increases as temperature increases. - Exemplary resistance temperature devices comprise sensitive materials which provide a plurality of resistances corresponding to a temperature profile. Resistance temperature devices can comprise platinum, polysilicon or other sensitive materials.
- In another embodiment,
temperature sensing devices 30 comprise diodes which provide a change in threshold voltage responsive to temperature changes. Such voltage changes are sufficient to enable monitoring of associated temperatures and extraction of temperature information. Othertemperature sensing devices 30 comprise thermocouples which comprise two overlapping dissimilar metals to create a voltage producing junction which varies dependent upon temperature exposure. Furthertemperature sensing devices 30 include a thermistor which comprises a mixture of metal oxides and encapsulated in an isolator such as epoxy or glass. - As described in detail below,
temperature sensing devices 30 can be fabricated or formed upon theelectronic device workpiece 10 or comprise preexisting devices which are positioned and adhered upon or attached to theelectronic device workpiece 10. Fabricatedtemperature sensing devices 30 are available from Watlow Electrical Manufacturing Company of St. Louis, Mo. - Electrical interconnects40, 41 are provided to electrically couple with individual
temperature sensing devices 30. In a preferred embodiment,electrical interconnects upper surface 20 ofsubstrate 11. In embodiments where pluraltemperature sensing devices 30 are provided, individualelectrical interconnects temperature sensing devices 30. - Electrical interconnects40, 41 are formed upon
upper surface 20 ofsubstrate 11 in one embodiment. Such formedelectrical interconnects 40 preferably comprise conductive traces. The conductive traces can comprise aluminum or other conductive materials. The conductive traces are formed by sputtering in one fabrication method.Electrical interconnects Electrical interconnects temperature sensing devices 30 withedge 22 ofelectronic device workpiece 10. - An isolator (not shown in FIG. 1) is provided intermediate
upper surface 20 andtemperature sensing devices 30 andelectrical interconnects -
Interface connection 18 is provided in electrical connection withelectrical interconnects interface connection 18 is located proximate to edge 22 ofelectronic device workpiece 10.Interface connection 18 is configured to provide electrical coupling ofelectrical interconnects temperature sensing devices 30 withcircuitry 12 external ofelectronic device workpiece 10. Exemplary interface connection configurations include tab tape, adapter, flip chip connections, wire bond connections, and conductive adhesives.Interface connection 18 can include other configurations in accordance with the present invention. - Referring to FIG. 1A, an
alternative interface connection 18 a is illustrated.Connection 18 a provides electrical coupling oftemperature sensing devices 30 withelectrical circuitry 12. The depictedinterface connection 18 a is defined byedge 24 ofworkpiece 10. - Referring to FIG. 1B, yet another
interface connection 18 b is illustrated. The depictedinterface connection 18 b comprises respective mating plug andreceptacle components Plug component 13 is coupled withwires 14 of external circuitry 12 (although threewires 14 are shown in FIG. 1B, additonal wires ofcircuitry 12 can be coupled with plug 13).Plug 13 is configured for removable coupling withcomponent 15. -
Receptacle component 15 is configured to receiveplug 13 and for attachment toelectrical interconnections 40, 41 (only oneinterconnection 40 is shown in FIG. 1B). When mated,components external circuitry 12 withrespective interconnections - A plurality of
interconnects 7 are used in the depicted embodiment to couple internalelectrical connections 17 ofcomponents interconnections Exemplary interconnects 7 include solder, solder balls, conductive epoxy, etc. - Referring to FIG. 2,
electronic device workpiece 10 includes acavity 50 formed withinsubstrate 11.Cavity 50 includes pluralsloping sidewalls bottom wall 54.Surface 20 ofsubstrate 11 includes sidewalls 52, 53, andbottom wall 54. Anexemplary cavity 50 has a depth of approximately 200 microns andbottom wall 54 has a width of approximately 300 microns. -
Cavity 50 is preferably formed by an anisotropic etch. An exemplary anisotropic etch includes potassium hydroxide (KOH). Utilization of an anisotropic etch providessloping sidewalls cavity 50. Provision of slopingsidewalls conductors surface 20 andisolator 56, and sidewalls 52, 53 ofcavity 50.Sidewalls upper surface 20 ofsubstrate 11. The most preferred embodiment providessidewalls upper surface 20. -
Cavity 50 is formed by an isotropic etch in an alternative embodiment. Wire bonded connections are preferably utilized in such an embodiment to provide electrical coupling ofinterconnects surface 20 with thetemperature sensing device 30 provided withincavity 50. - One
temperature sensing device 30 is shown borne bysubstrate 11 ofelectronic device workpiece 10. Anisolation layer 56 is shown overelectronic device workpiece 10.Isolator 56 is formed overupper surface 20 ofsubstrate 11 includingsidewalls bottom wall 54 ofcavity 50. - A preexisting
temperature sensing device 30 is positioned and adhered withincavity 50 in the depicted embodiment of FIG. 2.Temperature sensing device 30 is adhered using standard thermal conductive epoxies or adhesives in one embodiment. A temperature sensing device is formed withincavity 50 in other embodiments described below.Bottom wall 54 supportstemperature sensing device 30 in the depicted embodiment.Temperature sensing device 30 is supported byupper surface 20 ofsubstrate 11 in other embodiments. - Electric interconnects or
conductive traces upper surface 20 andsidewall 52 in the depicted embodiment (onlyconductive trace 40 is shown in FIG. 2). The illustratedelectrical interconnect 40 is provided over a portion ofbottom wall 54. An additionalelectrical connection 58 is utilized to electrically coupletemperature sensing device 30 with conductive trace orelectrical interconnect 40. In one embodiment,electrical connection 58 comprises a wire connection, such as that formed by wire bonding. Other forms of connections such as tab tape and flip chip connections can also be employed.Connection 58 is preferably encapsulated to minimize damage toconnection 58. A dispensedepoxy 57 is utilized in one embodiment to encapsulateconnection 58. As shown, it is preferred to leave a portion of the area adjacenttemperature sensing device 30 free of epoxy for accurate temperature sensing. - In other embodiments, contacting of
conductive trace 40 withtemperature sensing device 30 is sufficient to electricallycouple trace 40 andtemperature sensing device 30. - Referring to FIG. 2A, the illustrated
electrical interconnection 40 is formed outside ofcavity 50.Connection 58 is used to coupletemperature sensing device 30 with the depictedinterconnection 40 at a location uponinterconnection 40 outside ofcavity 50. -
Temperature sensing device 30 is preferably provided uponelectronic device workpiece 10 in a temperature sensing relation with respect toelectronic device workpiece 10.Temperature sensing device 30 is configured to sense the temperature of an area ofelectronic device workpiece 10 immediately adjacent the attacheddevice 30. In one embodiment, the resistance oftemperature sensing device 30 changes corresponding to changes in temperature. Such changes in resistance change the voltage drop acrosstemperature sensing device 30 thereby changing signals (for example the currents of the signals) passing throughtemperature sensing device 30. The generated signals correspond to the temperature of the area of theelectronic device workpiece 10 being sensed.Electrical interconnects interface connection 18 andexternal circuitry 12 in the preferred embodiment. Exemplaryexternal circuitry 12 contains devices that convert the received signals to localized temperatures at specific points. - Referring to FIGS. 3 and 4, like reference numerals as used herein refer to like components with any significant differences therebetween represented by an alphabetical suffix such as “a”. A temperature sensing device30 a is shown formed within
cavity 50 ofsubstrate 11.Electronic device workpiece 10 includes aconductive trace 40 extending uponisolator 56 over a portion ofupper surface 20, downsidewall 52 and acrossbottom wall 54 ofcavity 50. Anotherconductive trace 41 is coupled with temperature sensing device 30 a as shown in FIG. 4. - Temperature sensing device30 a is shown formed within
cavity 50 uponconductor 40. The illustrated temperature sensing device 30 a is a resistance temperature device. The resistance temperature device comprises a conductive material such as polysilicon or metals such as platinum. Other materials can also be utilized. Similarly, a combination of metals and polysilicon can also be utilized. In a preferred embodiment, temperature sensing device 30 a comprises polysilicon deposited by chemical vapor deposition (CVD). The deposited polysilicon can thereafter be doped by ion implantation or diffusion to provide a desired resistivity. Alternatively, doped polysilicon using PECVD techniques can also be deposited. The polysilicon resistance temperature device can thereafter be patterned such as by etching.Electrical interconnect 40 andtemperature sensing devices 30 can be formed with thin film processing techniques or thick film techniques using a stencil. - Referring to FIG. 4, the illustrated RTD temperature sensing device30 a comprises polysilicon patterned in an exemplary serpentine configuration. Temperature sensing device 30 a can be configured in other shapes and formats in other embodiments. Temperature sensing device 30 a is formed upon
bottom wall 54 ofcavity 50. Opposing ends of temperature sensing device 30 a are individually coupled with pluralelectrical interconnects electrical interconnects bottom wall 54 results in a change in resistance of temperature sensing device 30 a. Accordingly, the voltage drop across temperature sensing device 30 a changes with respect to fluctuations in temperature of the area ofelectronic device workpiece 10 adjacent device 30 a. Electronic interconnects 40, 41 are configured to conduct electrical signals which indicate a temperature ofelectronic device workpiece 10. - Providing temperature sensing devices within cavities of the electronic device workpiece enables temperature mapping of the workpiece in three dimensions. Temperature sensing devices can be provided both on the surfaces of an electronic device workpiece and within cavities formed within the workpiece. Temperature sensing devices upon one or both surfaces of the electronic device workpiece enable temperature mapping in x-y directions upon the respective surfaces of the workpiece. Providing temperature sensing devices within cavities of the workpiece enable temperature sensing within the z direction intermediate the surfaces of the workpiece.
- Referring to FIG. 5, temperature sensing device30 a is formed over
surface 20 ofsubstrate 11 ofelectronic device workpiece 10 andisolator layer 56. In the depicted embodiment, at least a portion of temperature sensing device 30 a is formed or positioned uponelectrical interconnect 40. In the depicted embodiment, temperature sensing device 30 a is formed by chemical vapor deposition (CVD). In other embodiments, temperature sensing device 30 a is formed by alternative processing methods.Isolator layer 56 is provided intermediateelectrical interconnect 40 andupper surface 20 ofsubstrate 11. - Referring to FIG. 6, another construction for providing electrical connection with temperature sensing device30 a is shown.
Upper surface 20 andlower surface 22 ofsubstrate 11 are shown in FIG. 6.Electrical interconnect 40 is formed uponupper surface 20 as previously described. - The illustrated
electronic device workpiece 10 also includes a via 44 formed withinsubstrate 11. Via 44 enables electrical connection ofupper surface 20 withlower surface 22. In particular, anotherelectrical interconnection 42 is formed uponlower surface 22 ofsubstrate 11. - Via44 is also plugged with a conductive material forming
electrical interconnection 45 providing coupling ofinterconnections interconnection 45. -
Electrical interconnection 42 comprises a pad in the illustrated configuration. Alternatively,electrical connection 42 can be formed to extend to an edge ofelectronic device workpiece 10.Electrical interconnection 42 can be coupled with external circuitry (not shown in FIG. 6) enabling monitoring of temperatures ofelectronic device workpiece 10. - In some embodiments, the described electronic device workpiece is configured and utilized as a calibration wafer. Such calibration wafers are typically placed within a workpiece processing chamber and the chamber can be brought up to subject processing conditions at typical elevated temperatures. Through the use of an electronic device workpiece configured as a calibration wafer, the temperature at various positions upon electronic device workpieces to be processed can be determined. Thereafter, data provided by temperature sensing devices located upon the electronic device workpiece can be utilized to provide temperature control and modify some aspect of the processing chamber.
- The processing chamber is preferably modified to provide a uniform temperature distribution across the entire surface of the electronic device workpiece being processed. In other processes, the processing chamber is modified to provide varied temperatures across a surface of the workpiece.
- The modifications can be made with the calibration workpiece in place within the processing chamber. The effect of such modifications can be verified by the temperature sensing devices and associated temperature monitoring equipment coupled with the devices. Thereafter, the calibration workpiece is removed and the equipment having been desirably calibrated can be utilized to process other electronic device workpieces in mass.
- In another embodiment, temperature sensing devices are provided upon an electronic device workpiece which will actually be processed and subsequently utilized to fabricate integrated circuitry or other components. The temperature sensing devices can be fabricated upon the electronic device workpiece during the fabrication of the electronic device workpiece. In another embodiment, preexisting or prefabricated temperature sensing devices are positioned and adhered upon the electronic device workpiece.
- In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.
Claims (70)
1. An electronic device workpiece comprising:
a substrate having a surface;
a temperature sensing device borne by the substrate; and
an electrical interconnect provided upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device.
2. The electronic device workpiece according to claim 1 further comprising a wire connection adapted to electrically connect the electrical interconnect and the temperature sensing device.
3. The electronic device workpiece according to claim 1 wherein the electrical interconnect contacts the temperature sensing device.
4. The electronic device workpiece according to claim 1 wherein the workpiece has an edge and the electrical interconnect extends from the temperature sensing device to the edge of the electronic device workpiece.
5. The electronic device workpiece according to claim 1 further comprising a cavity including plural sloped sidewalls and a bottom wall within the substrate, the temperature sensing device being provided within the cavity.
6. The electronic device workpiece according to claim 5 wherein the sidewalls are sloped at an angle within the approximate range of fifty to sixty degrees with respect to the surface of the substrate.
7. The electronic device workpiece according to claim 1 further comprising an isolator intermediate the surface of the electronic device workpiece and individual ones of the electrical interconnect and the temperature sensing device.
8. The electronic device workpiece according to claim 1 further comprising an interface connection in electrical connection with the electrical interconnect, the interface connection being configured to provide electrical coupling of the electrical interconnect and the temperature sensing device with circuitry external of the electronic device workpiece.
9. The electronic device workpiece according to claim 1 wherein the electrical interconnect comprises a conductive trace.
10. The electronic device workpiece according to claim 1 wherein the temperature sensing device comprises a resistance temperature device.
11. The electronic device workpiece according to claim 1 wherein the substrate includes a via and a conductor within the via configured to electrically couple with the electrical interconnect.
12. The electronic device workpiece according to claim 1 further comprising plural additional temperature sensing devices borne by the substrate.
13. The electronic device workpiece according to claim 1 wherein the electronic device workpiece comprises a calibration workpiece.
14. The electronic device workpiece according to claim 1 wherein the substrate comprises a semiconductive substrate.
15. The electronic device workpiece according to claim 1 wherein the substrate comprises silicon.
16. The electronic device workpiece according to claim 1 wherein the substrate comprises silicon carbide.
17. The electronic device workpiece according to claim 1 wherein the substrate comprises gallium nitride.
18. An electronic device workpiece comprising:
a substrate having a surface;
a cavity formed in the substrate, the cavity having sidewalls sloped at an angle within an approximate range of fifty to sixty degrees with respect to the surface of the substrate;
a temperature sensing device within the cavity of the substrate; and
an electrical interconnect coupled with the temperature sensing device.
19. The electronic device workpiece according to claim 18 wherein the electrical interconnect is formed upon the surface of the substrate.
20. The electronic device workpiece according to claim 18 further comprising a wire connection electrically connecting the electrical interconnect and the temperature sensing device.
21. The electronic device workpiece according to claim 18 wherein the electrical interconnect contacts the temperature sensing device.
22. The electronic device workpiece according to claim 18 wherein the workpiece has an edge and the electrical interconnect extends from the temperature sensing device to the edge of the electronic device workpiece.
23. The electronic device workpiece according to claim 18 wherein the sidewalls are sloped at approximately fifty-four degrees.
24. The electronic device workpiece according to claim 18 wherein the electronic device workpiece comprises a semiconductor wafer.
25. The electronic device workpiece according to claim 18 wherein the electronic device workpiece comprises a calibration workpiece.
26. The electronic device workpiece according to claim 18 wherein the electrical interconnect comprises a conductive trace.
27. The electronic device workpiece according to claim 18 wherein the temperature sensing device comprises a resistance temperature device.
28. A semiconductor workpiece comprising:
a semiconductive substrate having a surface;
a temperature sensing device borne by the substrate; and
an electrical interconnect provided upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device.
29. The semiconductor workpiece according to claim 28 further comprising a cavity including plural sloped sidewalls and a bottom wall within the substrate, the temperature sensing device being provided within the cavity.
30. The semiconductor workpiece according to claim 28 wherein the electrical interconnect comprises a conductive trace.
31. A semiconductor workpiece comprising:
a substrate having a surface and an edge;
a cavity formed in the substrate, the cavity having sidewalls sloped at an approximate fifty-four degree angle with respect to the surface of the substrate;
a resistance temperature device within the cavity of the substrate;
a plurality of conductive traces coupled with the resistance temperature device, the conductive traces being formed upon the surface of the substrate to contact the resistance temperature device, the conductive traces being configured to electrically couple the resistance temperature device with the edge of the substrate;
an isolator intermediate the surface of the electronic device workpiece and the conductive traces and the resistance temperature device; and
an interface connection in electrical connection with the conductive traces, the interface connection being configured to provide electrical coupling of the resistance temperature device with circuitry external of the semiconductor workpiece.
32. A method of sensing temperature of an electronic device workpiece comprising:
providing an electronic device workpiece;
supporting a temperature sensing device using the electronic device workpiece;
providing an electrical interconnect upon a surface of the electronic device workpiece;
electrically coupling the electrical interconnect with the temperature sensing device; and
sensing temperature of the electronic device workpiece using the temperature sensing device.
33. The method according to claim 32 further comprising wire bonding the electrical interconnect and the temperature sensing device.
34. The method according to claim 32 further comprising:
forming a cavity in the electronic device workpiece; and
providing the temperature sensing device within the cavity.
35. The method according to claim 34 wherein the forming the cavity comprises anisotropically etching the electronic device workpiece.
36. The method according to claim 34 wherein the forming the cavity comprises isotropically etching the electronic device workpiece.
37. The method according to claim 32 further comprising forming the temperature sensing device.
38. The method according to claim 37 wherein the forming the temperature sensing device comprises forming a resistance temperature device.
39. The method according to claim 32 further comprising electrically coupling the electrical interconnect with external circuitry.
40. The method according to claim 32 further comprising electrically coupling the temperature sensing device with an edge of the electronic device workpiece using the electrical interconnect.
41. The method according to claim 32 wherein the providing the electrical interconnect comprises forming a conductive trace.
42. The method according to claim 32 further comprising contacting the electrical interconnect with the temperature sensing device.
43. The method according to claim 32 wherein the method comprises a method of sensing temperature of semiconductor wafers.
44. A method of semiconductor processing, comprising:
providing a semiconductor substrate;
anisotropically etching a cavity in the semiconductor substrate; and
providing a temperature sensing device within the cavity of the semiconductor substrate.
45. The method according to claim 44 farther comprising:
providing an electrical interconnect upon a surface of the semiconductor substrate; and
electrically coupling the electrical interconnect with the temperature sensing device.
46. The method according to claim 45 wherein the providing the electrical interconnect comprises forming a conductive trace.
47. The method according to claim 45 wherein the electrically coupling comprises wire bonding the electrical interconnect and the temperature sensing device.
48. The method according to claim 45 wherein the electrically coupling includes contacting the electrical interconnect and the temperature sensing device.
49. The method according to claim 45 further comprising electrically coupling the electrical interconnect with circuitry external to the semiconductor substrate.
50. The method according to claim 45 further comprising electrically coupling the temperature sensing device with an edge of the semiconductor substrate using the electrical interconnect.
51. The method according to claim 44 wherein the providing comprises forming the temperature sensing device within the cavity.
52. The method according to claim 44 wherein the providing comprises positioning the temperature sensing device within the cavity.
53. A method of sensing temperature of an electronic device workpiece comprising:
providing an electronic device workpiece;
forming a temperature sensing device upon the electronic device workpiece, the forming including providing the temperature sensing device in a temperature sensing relation with the electronic device workpiece; and
sensing the temperature of the electronic device workpiece using the temperature sensing device.
54. The method according to claim 53 further comprising:
providing an electrical interconnect upon the electronic device workpiece; and
electrically coupling the electrical interconnect with the temperature sensing device.
55. The method according to claim 54 wherein the providing the electrical interconnect comprises forming a conductive trace.
56. The method according to claim 54 wherein the electrically coupling comprises wire bonding the electrical interconnect and the temperature sensing device.
57. The method according to claim 54 wherein the electrically coupling includes contacting the electrical interconnect and the temperature sensing device.
58. The method according to claim 53 further comprising:
forming a cavity in the electronic device workpiece; and
providing the temperature sensing device within the cavity.
59. The method according to claim 58 wherein the forming the cavity comprises anisotropically etching the electronic device workpiece.
60. The method according to claim 53 wherein the forming comprises forming a resistance temperature device.
61. The method according to claim 53 further comprising forming plural temperature sensing devices upon the electronic device workpiece.
62. A method of sensing temperature of an electronic device workpiece comprising:
providing an electronic device workpiece;
supporting a temperature sensing device using the electronic device workpiece;
providing the temperature sensing device in a temperature sensing relation with the electronic device workpiece;
providing an electrical interconnect upon a surface of the electronic device workpiece; and
electrically coupling the electrical interconnect with the temperature sensing device.
63. The method according to claim 62 wherein the coupling comprises wire bonding the electrical interconnect and the temperature sensing device.
64. The method according to claim 62 wherein the coupling comprises contacting the electrical interconnect with the temperature sensing device.
65. The method according to claim 62 further comprising:
forming a cavity in the electronic device workpiece; and
providing the temperature sensing device within the cavity.
66. The method according to claim 65 wherein the forming the cavity comprises anisotropically etching the electronic device workpiece.
67. The method according to claim 62 further comprising forming a temperature sensing, device upon the electronic device workpiece.
68. The method according to claim 62 further comprising electrically coupling the electrical interconnect with circuitry external to the electronic device workpiece.
69. The method according to claim 62 further comprising electrically coupling the temperature sensing device with an edge of the electronic device workpiece using the electrical interconnect.
70. The method according to claim 62 wherein the providing the electrical interconnect comprises forming a conductive trace.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9627224B2 (en) * | 2015-03-30 | 2017-04-18 | Stmicroelectronics, Inc. | Semiconductor device with sloped sidewall and related methods |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744346B1 (en) * | 1998-02-27 | 2004-06-01 | Micron Technology, Inc. | Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece |
US6229322B1 (en) * | 1998-08-21 | 2001-05-08 | Micron Technology, Inc. | Electronic device workpiece processing apparatus and method of communicating signals within an electronic device workpiece processing apparatus |
US6967497B1 (en) | 1998-08-21 | 2005-11-22 | Micron Technology, Inc. | Wafer processing apparatuses and electronic device workpiece processing apparatuses |
US7282889B2 (en) * | 2001-04-19 | 2007-10-16 | Onwafer Technologies, Inc. | Maintenance unit for a sensor apparatus |
JP2003142376A (en) * | 2001-11-02 | 2003-05-16 | Canon Inc | Lithographic system, aligner, method of controlling them, and method of manufacturing device |
US6889568B2 (en) * | 2002-01-24 | 2005-05-10 | Sensarray Corporation | Process condition sensing wafer and data analysis system |
US7757574B2 (en) * | 2002-01-24 | 2010-07-20 | Kla-Tencor Corporation | Process condition sensing wafer and data analysis system |
US7135852B2 (en) * | 2002-12-03 | 2006-11-14 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
US7151366B2 (en) * | 2002-12-03 | 2006-12-19 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
US7403834B2 (en) * | 2003-05-08 | 2008-07-22 | Regents Of The University Of California | Methods of and apparatuses for controlling process profiles |
US7306967B1 (en) | 2003-05-28 | 2007-12-11 | Adsem, Inc. | Method of forming high temperature thermistors |
US7812705B1 (en) | 2003-12-17 | 2010-10-12 | Adsem, Inc. | High temperature thermistor probe |
US7292132B1 (en) * | 2003-12-17 | 2007-11-06 | Adsem, Inc. | NTC thermistor probe |
JP4515143B2 (en) * | 2004-05-10 | 2010-07-28 | 三菱電機株式会社 | Method for manufacturing thermal flow rate detection element |
US7415312B2 (en) * | 2004-05-25 | 2008-08-19 | Barnett Jr James R | Process module tuning |
US7363195B2 (en) * | 2004-07-07 | 2008-04-22 | Sensarray Corporation | Methods of configuring a sensor network |
US7459175B2 (en) * | 2005-01-26 | 2008-12-02 | Tokyo Electron Limited | Method for monolayer deposition |
WO2006103104A1 (en) * | 2005-04-01 | 2006-10-05 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Optical element and method for recording beam parameters, comprising a temperature sensor provided in the form of a pixel matrix |
TWI405281B (en) * | 2005-12-13 | 2013-08-11 | Sensarray Corp | Process condition sensing wafer and data analysis system |
US8604361B2 (en) * | 2005-12-13 | 2013-12-10 | Kla-Tencor Corporation | Component package for maintaining safe operating temperature of components |
DE102006002753B4 (en) * | 2006-01-20 | 2010-09-30 | X-Fab Semiconductor Foundries Ag | Method and apparatus for evaluating the undercut of deep trench structures in SOI slices |
KR100690926B1 (en) * | 2006-02-03 | 2007-03-09 | 삼성전자주식회사 | Micro heat flux sensor array |
US20090085031A1 (en) * | 2006-03-16 | 2009-04-02 | Tokyo Electron Limited | Wafer-Shaped Measuring Apparatus and Method for Manufacturing the Same |
US7540188B2 (en) * | 2006-05-01 | 2009-06-02 | Lynn Karl Wiese | Process condition measuring device with shielding |
US7555948B2 (en) * | 2006-05-01 | 2009-07-07 | Lynn Karl Wiese | Process condition measuring device with shielding |
JP5034327B2 (en) * | 2006-06-07 | 2012-09-26 | 富士通セミコンダクター株式会社 | Temperature measuring tool for semiconductor manufacturing apparatus, temperature measuring method for semiconductor manufacturing apparatus, and semiconductor manufacturing apparatus |
US7969323B2 (en) * | 2006-09-14 | 2011-06-28 | Siemens Energy, Inc. | Instrumented component for combustion turbine engine |
US7629184B2 (en) * | 2007-03-20 | 2009-12-08 | Tokyo Electron Limited | RFID temperature sensing wafer, system and method |
US8079758B2 (en) * | 2007-10-25 | 2011-12-20 | Sebacs Co., Ltd. | Temperature computing instrument and method for calibrating temperature of sensor part used therefor |
US7847191B2 (en) | 2007-11-06 | 2010-12-07 | Xerox Corporation | Electrical component, manufacturing system and method |
US8523427B2 (en) * | 2008-02-27 | 2013-09-03 | Analog Devices, Inc. | Sensor device with improved sensitivity to temperature variation in a semiconductor substrate |
JP5476114B2 (en) * | 2009-12-18 | 2014-04-23 | 東京エレクトロン株式会社 | Temperature measuring device |
FR2963674B1 (en) * | 2010-08-05 | 2013-05-17 | Astrium Sas | DEVICE FOR MEASURING THE TEMPERATURE OF A SUBSTRATE |
US8967860B2 (en) * | 2011-02-07 | 2015-03-03 | Applied Materials, Inc. | Low temperature measurement and control using low temperature pyrometry |
JP2012230023A (en) * | 2011-04-27 | 2012-11-22 | Tokyo Electron Ltd | Temperature measurement device and temperature calibration device and method thereof |
US8681493B2 (en) | 2011-05-10 | 2014-03-25 | Kla-Tencor Corporation | Heat shield module for substrate-like metrology device |
JP5813599B2 (en) * | 2011-09-07 | 2015-11-17 | 日本特殊陶業株式会社 | Sensor and manufacturing method thereof |
US20130130184A1 (en) * | 2011-11-21 | 2013-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Controlling Wafer Temperature |
US9103731B2 (en) | 2012-08-20 | 2015-08-11 | Unison Industries, Llc | High temperature resistive temperature detector for exhaust gas temperature measurement |
WO2014194077A2 (en) * | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Method and system for measuring heat flux |
JP6507372B2 (en) * | 2014-01-16 | 2019-05-08 | パナソニックIpマネジメント株式会社 | Electronic device provided with an electric element and a temperature detector |
US10168380B2 (en) | 2015-01-23 | 2019-01-01 | Mitsubishi Electric Corporation | Semiconductor device evaluation jig, semiconductor device evaluation apparatus, and semiconductor device evaluation method |
WO2017004242A1 (en) * | 2015-06-29 | 2017-01-05 | Component Re-Engineering Company, Inc. | Temperature sensing device and method for making same |
US10393594B2 (en) * | 2016-08-12 | 2019-08-27 | Qualcomm Incorporated | Thermopile mesh |
US11378468B2 (en) * | 2016-08-12 | 2022-07-05 | Brightsentinel Limited | Sensor module and process for producing same |
KR101950884B1 (en) * | 2016-11-04 | 2019-02-22 | (주)제이디 | circuit-embeded wafer, and manufacturing method thereof |
WO2018199601A1 (en) * | 2017-04-28 | 2018-11-01 | (주)에스엔텍 | Sensor-mounted wafer |
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KR101958728B1 (en) * | 2017-09-08 | 2019-03-18 | (주)에스엔텍 | Apparatus for Measuring Plasma Uniformity |
Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3710251A (en) * | 1971-04-07 | 1973-01-09 | Collins Radio Co | Microelectric heat exchanger pedestal |
US4104589A (en) * | 1976-10-07 | 1978-08-01 | Rca Corporation | Chuck for use in the testing of semiconductor wafers |
US4355463A (en) * | 1980-03-24 | 1982-10-26 | National Semiconductor Corporation | Process for hermetically encapsulating semiconductor devices |
US4536494A (en) * | 1983-11-17 | 1985-08-20 | Carter A Franklin | Animal feed method employing natamycin |
US4560216A (en) * | 1983-03-22 | 1985-12-24 | Yamaichi Electric Mfg. Co., Ltd. | Connector with component removal means |
US4754555A (en) * | 1987-05-18 | 1988-07-05 | Adcotech Corporation | Apparatus for inspecting the coplanarity of leaded surface mounted electronic components |
US4818327A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
US4888988A (en) * | 1987-12-23 | 1989-12-26 | Siemens-Bendix Automotive Electronics L.P. | Silicon based mass airflow sensor and its fabrication method |
US4912600A (en) * | 1988-09-07 | 1990-03-27 | Auburn Univ. Of The State Of Alabama | Integrated circuit packaging and cooling |
US5325052A (en) * | 1990-11-30 | 1994-06-28 | Tokyo Electron Yamanashi Limited | Probe apparatus |
US5378311A (en) * | 1992-12-04 | 1995-01-03 | Sony Corporation | Method of producing semiconductor device |
US5437289A (en) * | 1992-04-02 | 1995-08-01 | Liverance; Howard L. | Interactive sports equipment teaching device |
US5475317A (en) * | 1993-12-23 | 1995-12-12 | Epi Technologies, Inc. | Singulated bare die tester and method of performing forced temperature electrical tests and burn-in |
US5478242A (en) * | 1994-04-29 | 1995-12-26 | Texas Instruments Incorporated | Thermal isolation of hybrid thermal detectors through an anisotropic etch |
US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
US5522215A (en) * | 1993-10-18 | 1996-06-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate cooling apparatus |
US5550526A (en) * | 1994-12-27 | 1996-08-27 | Lucent Technologies Inc. | Thermal detection elements with heater |
US5557215A (en) * | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
US5645764A (en) * | 1995-01-19 | 1997-07-08 | International Business Machines Corporation | Electrically conductive pressure sensitive adhesives |
US5670066A (en) * | 1995-03-17 | 1997-09-23 | Lam Research Corporation | Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated |
US5703287A (en) * | 1995-03-29 | 1997-12-30 | Robert Bosch Gmbh | Measuring element for a flow sensor |
US5708250A (en) * | 1996-03-29 | 1998-01-13 | Lam Resarch Corporation | Voltage controller for electrostatic chuck of vacuum plasma processors |
US5830372A (en) * | 1994-05-25 | 1998-11-03 | Siemens Aktiengesellschaft | Thermal sensor/actuator in semiconductor material |
US5945834A (en) * | 1993-12-16 | 1999-08-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing method |
US5964395A (en) * | 1997-06-09 | 1999-10-12 | Ford Motor Company | Predeposited transient phase electronic interconnect media |
US5969639A (en) * | 1997-07-28 | 1999-10-19 | Lockheed Martin Energy Research Corporation | Temperature measuring device |
US6020750A (en) * | 1997-06-26 | 2000-02-01 | International Business Machines Corporation | Wafer test and burn-in platform using ceramic tile supports |
US6121061A (en) * | 1997-11-03 | 2000-09-19 | Asm America, Inc. | Method of processing wafers with low mass support |
US6377060B1 (en) * | 1997-06-11 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for wafer detection |
US6635852B1 (en) * | 1997-06-12 | 2003-10-21 | Nec Corporation | Method and apparatus for lamp anneal |
US6645701B1 (en) * | 1995-11-22 | 2003-11-11 | Nikon Corporation | Exposure method and exposure apparatus |
US6709878B2 (en) * | 1998-02-27 | 2004-03-23 | Micron Technology, Inc. | Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece |
US6865080B2 (en) * | 2002-01-16 | 2005-03-08 | Rockwell Automation Technologies, Inc. | Compact fluid cooled power converter supporting multiple circuit boards |
US6936849B1 (en) * | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440407A (en) * | 1966-12-29 | 1969-04-22 | Rca Corp | Temperature controlled circuit boards |
US3683306A (en) * | 1968-11-19 | 1972-08-08 | Philips Corp | Temperature compensated semiconductor resistor containing neutral inactive impurities |
US3614345A (en) * | 1969-11-17 | 1971-10-19 | Zyrotron Ind Inc | Thermal sensing device |
US4006909A (en) | 1975-04-16 | 1977-02-08 | Rca Corporation | Semiconductor wafer chuck with built-in standoff for contactless photolithography |
DE7541295U (en) * | 1975-12-24 | 1976-05-13 | Deutsche Gold- Und Silber-Scheideanstalt Vormals Roessler, 6000 Frankfurt | MEASURING RESISTOR FOR RESISTANCE THERMOMETER |
US4356379A (en) * | 1978-01-13 | 1982-10-26 | Burr-Brown Research Corporation | Integrated heating element and method for thermal testing and compensation of integrated circuits |
US4284872A (en) * | 1978-01-13 | 1981-08-18 | Burr-Brown Research Corporation | Method for thermal testing and compensation of integrated circuits |
US4332081A (en) * | 1978-06-22 | 1982-06-01 | North American Philips Corporation | Temperature sensor |
JPS6035016B2 (en) * | 1979-07-13 | 1985-08-12 | 株式会社千野製作所 | Thermistor bolometer |
FR2467512A1 (en) | 1979-10-15 | 1981-04-17 | Crouzet Sa | INTEGRAL SIMULTANEOUS MULTI-ACCESS TRANSMISSION SYSTEM ON OPTICAL FIBER TRANSMISSION LINES |
US4332061A (en) * | 1980-05-12 | 1982-06-01 | Textron, Inc. | Adjustable bracelet clasp |
US4518944A (en) * | 1983-10-18 | 1985-05-21 | Trw Inc. | Temperature stabilizer |
JPS60243549A (en) * | 1984-05-05 | 1985-12-03 | ゲゼルシヤフト、フユール、ゲレーテバウ、ミツト、ベシユレンクテル、ハフツング | Sensor for catalytic combustion and manufacture thereof |
US4802099A (en) * | 1986-01-03 | 1989-01-31 | International Business Machines Corporation | Physical parameter balancing of circuit islands in integrated circuit wafers |
JPH02268462A (en) * | 1989-04-11 | 1990-11-02 | Matsushita Electron Corp | Semiconductor device |
US5141334A (en) * | 1991-09-24 | 1992-08-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Sub-kelvin resistance thermometer |
DE4202733C2 (en) * | 1992-01-31 | 1995-06-08 | Bosch Gmbh Robert | Temperature sensor |
US5406109A (en) * | 1992-10-28 | 1995-04-11 | Whitney; Julie G. | Micro electronic element and method of making same |
JP2639308B2 (en) * | 1992-11-19 | 1997-08-13 | 富士電機株式会社 | Force sensor, temperature sensor and temperature / force sensor device |
US5347869A (en) * | 1993-03-25 | 1994-09-20 | Opto Tech Corporation | Structure of micro-pirani sensor |
JPH06310580A (en) * | 1993-04-20 | 1994-11-04 | Nippon Steel Corp | Measuring method for temperature of semiconductor wafer and semiconductor wafer with temperature measuring means |
US5551283A (en) * | 1993-08-10 | 1996-09-03 | Ricoh Seiki Company, Ltd. | Atmosphere measuring device and flow sensor |
KR100333153B1 (en) * | 1993-09-07 | 2002-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Process for fabricating semiconductor device |
US5435646A (en) * | 1993-11-09 | 1995-07-25 | Hughes Aircraft Company | Temperature measurement using ion implanted wafers |
US5436494A (en) * | 1994-01-12 | 1995-07-25 | Texas Instruments Incorporated | Temperature sensor calibration wafer structure and method of fabrication |
EP0664456B1 (en) * | 1994-01-20 | 1999-07-07 | Honda Giken Kogyo Kabushiki Kaisha | Acceleration sensor |
US5437189A (en) | 1994-05-03 | 1995-08-01 | Motorola, Inc. | Dual absolute pressure sensor and method thereof |
US6577148B1 (en) * | 1994-08-31 | 2003-06-10 | Motorola, Inc. | Apparatus, method, and wafer used for testing integrated circuits formed on a product wafer |
KR100228449B1 (en) * | 1994-09-01 | 1999-11-01 | 렌켄 웨인 지. | A temperature calibration substrate |
US5560526A (en) * | 1995-03-06 | 1996-10-01 | Jantzen; Jerry E. | Cycle rack and bike rack |
US5886863A (en) | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
US5612574A (en) * | 1995-06-06 | 1997-03-18 | Texas Instruments Incorporated | Semiconductor structures using high-dielectric-constant materials and an adhesion layer |
US6293698B1 (en) * | 1995-10-04 | 2001-09-25 | Advanced Micro Devices, Inc. | Method for precise temperature sensing and control of semiconductor structures |
US5831333A (en) * | 1996-05-14 | 1998-11-03 | Sun Microsystems, Inc. | Integrated junction temperature sensor/package design and method of implementing same |
US5708260A (en) * | 1996-08-30 | 1998-01-13 | Learningbridge, Inc. | Slide-rule calculator for computing a salary replacement value |
US5919548A (en) * | 1996-10-11 | 1999-07-06 | Sandia Corporation | Chemical-mechanical polishing of recessed microelectromechanical devices |
US6037645A (en) * | 1998-01-27 | 2000-03-14 | The United States Of America As Represented By The United States Department Of Commerce | Temperature calibration wafer for rapid thermal processing using thin-film thermocouples |
US6004471A (en) * | 1998-02-05 | 1999-12-21 | Opto Tech Corporation | Structure of the sensing element of a platinum resistance thermometer and method for manufacturing the same |
US6325536B1 (en) * | 1998-07-10 | 2001-12-04 | Sensarray Corporation | Integrated wafer temperature sensors |
US6190040B1 (en) * | 1999-05-10 | 2001-02-20 | Sensarray Corporation | Apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool |
-
1998
- 1998-02-27 US US09/032,184 patent/US6744346B1/en not_active Expired - Fee Related
-
1999
- 1999-09-03 US US09/389,924 patent/US20020034832A1/en not_active Abandoned
-
2001
- 2001-04-13 US US09/835,052 patent/US6472240B2/en not_active Expired - Lifetime
-
2002
- 2002-05-16 US US10/042,707 patent/US6709878B2/en not_active Expired - Lifetime
- 2002-10-28 US US10/282,724 patent/US20030059960A1/en not_active Abandoned
-
2004
- 2004-02-06 US US10/773,383 patent/US7419299B2/en not_active Expired - Fee Related
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3710251A (en) * | 1971-04-07 | 1973-01-09 | Collins Radio Co | Microelectric heat exchanger pedestal |
US4104589A (en) * | 1976-10-07 | 1978-08-01 | Rca Corporation | Chuck for use in the testing of semiconductor wafers |
US4355463A (en) * | 1980-03-24 | 1982-10-26 | National Semiconductor Corporation | Process for hermetically encapsulating semiconductor devices |
US4560216A (en) * | 1983-03-22 | 1985-12-24 | Yamaichi Electric Mfg. Co., Ltd. | Connector with component removal means |
US4536494A (en) * | 1983-11-17 | 1985-08-20 | Carter A Franklin | Animal feed method employing natamycin |
US4754555A (en) * | 1987-05-18 | 1988-07-05 | Adcotech Corporation | Apparatus for inspecting the coplanarity of leaded surface mounted electronic components |
US4818327A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
US4888988A (en) * | 1987-12-23 | 1989-12-26 | Siemens-Bendix Automotive Electronics L.P. | Silicon based mass airflow sensor and its fabrication method |
US4912600A (en) * | 1988-09-07 | 1990-03-27 | Auburn Univ. Of The State Of Alabama | Integrated circuit packaging and cooling |
US5325052A (en) * | 1990-11-30 | 1994-06-28 | Tokyo Electron Yamanashi Limited | Probe apparatus |
US5437289A (en) * | 1992-04-02 | 1995-08-01 | Liverance; Howard L. | Interactive sports equipment teaching device |
US5378311A (en) * | 1992-12-04 | 1995-01-03 | Sony Corporation | Method of producing semiconductor device |
US5557215A (en) * | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
US5522215A (en) * | 1993-10-18 | 1996-06-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate cooling apparatus |
US5945834A (en) * | 1993-12-16 | 1999-08-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing method |
US5475317A (en) * | 1993-12-23 | 1995-12-12 | Epi Technologies, Inc. | Singulated bare die tester and method of performing forced temperature electrical tests and burn-in |
US5478242A (en) * | 1994-04-29 | 1995-12-26 | Texas Instruments Incorporated | Thermal isolation of hybrid thermal detectors through an anisotropic etch |
US5830372A (en) * | 1994-05-25 | 1998-11-03 | Siemens Aktiengesellschaft | Thermal sensor/actuator in semiconductor material |
US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
US5550526A (en) * | 1994-12-27 | 1996-08-27 | Lucent Technologies Inc. | Thermal detection elements with heater |
US5645764A (en) * | 1995-01-19 | 1997-07-08 | International Business Machines Corporation | Electrically conductive pressure sensitive adhesives |
US5670066A (en) * | 1995-03-17 | 1997-09-23 | Lam Research Corporation | Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated |
US5703287A (en) * | 1995-03-29 | 1997-12-30 | Robert Bosch Gmbh | Measuring element for a flow sensor |
US6645701B1 (en) * | 1995-11-22 | 2003-11-11 | Nikon Corporation | Exposure method and exposure apparatus |
US5708250A (en) * | 1996-03-29 | 1998-01-13 | Lam Resarch Corporation | Voltage controller for electrostatic chuck of vacuum plasma processors |
US5964395A (en) * | 1997-06-09 | 1999-10-12 | Ford Motor Company | Predeposited transient phase electronic interconnect media |
US6377060B1 (en) * | 1997-06-11 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for wafer detection |
US6635852B1 (en) * | 1997-06-12 | 2003-10-21 | Nec Corporation | Method and apparatus for lamp anneal |
US6020750A (en) * | 1997-06-26 | 2000-02-01 | International Business Machines Corporation | Wafer test and burn-in platform using ceramic tile supports |
US5969639A (en) * | 1997-07-28 | 1999-10-19 | Lockheed Martin Energy Research Corporation | Temperature measuring device |
US6936849B1 (en) * | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US6121061A (en) * | 1997-11-03 | 2000-09-19 | Asm America, Inc. | Method of processing wafers with low mass support |
US6709878B2 (en) * | 1998-02-27 | 2004-03-23 | Micron Technology, Inc. | Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece |
US6865080B2 (en) * | 2002-01-16 | 2005-03-08 | Rockwell Automation Technologies, Inc. | Compact fluid cooled power converter supporting multiple circuit boards |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9627224B2 (en) * | 2015-03-30 | 2017-04-18 | Stmicroelectronics, Inc. | Semiconductor device with sloped sidewall and related methods |
Also Published As
Publication number | Publication date |
---|---|
US6472240B2 (en) | 2002-10-29 |
US20030173635A1 (en) | 2003-09-18 |
US7419299B2 (en) | 2008-09-02 |
US20040164372A1 (en) | 2004-08-26 |
US6744346B1 (en) | 2004-06-01 |
US20010012639A1 (en) | 2001-08-09 |
US6709878B2 (en) | 2004-03-23 |
US20020034832A1 (en) | 2002-03-21 |
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