US20030052396A1 - Semiconductor device and method of making the same - Google Patents

Semiconductor device and method of making the same Download PDF

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Publication number
US20030052396A1
US20030052396A1 US10/246,126 US24612602A US2003052396A1 US 20030052396 A1 US20030052396 A1 US 20030052396A1 US 24612602 A US24612602 A US 24612602A US 2003052396 A1 US2003052396 A1 US 2003052396A1
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United States
Prior art keywords
package
polyamide
housing
semiconductor device
thermoplastic resin
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/246,126
Inventor
Masaya Tajima
Katsuya Kogiso
Mitsuo Watanabe
Toshiki Matsubara
Kenji Sato
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Tokai Rika Co Ltd
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Tokai Rika Co Ltd
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Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Assigned to KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO reassignment KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOGISO, KATSUYA, MATSUBARA, THOSIKI, SATO, KENJI, TAJIMA, MASAYA, WATANABE, MITSUO
Publication of US20030052396A1 publication Critical patent/US20030052396A1/en
Assigned to KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO reassignment KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE FOURTH ASSIGNOR'S NAME AND THE SPELLING OF THE ASSIGNEE'S ADDRESS PREVIOUSLY RECORDED ON REEL 013505 FRAME 0917. Assignors: KOGISO, KATSUYA, MATSUBARA, TOSHIKI, SATO, KENJI, TAJIMA, MASAYA, WATANABE, MITSUO
Priority to US12/204,502 priority Critical patent/US7588962B2/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142Sealing arrangements between parts, e.g. adhesion promotors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to sealing of a semiconductor device in which a semiconductor package and a housing containing the semiconductor package are formed of different synthetic resins. More particularly, the present invention relates to a semiconductor device in which a housing is formed of thermoplastic resin (a first synthetic resin) and a semiconductor package is formed of thermosetting epoxy resin (a second synthetic resin), and a method of making the same.
  • thermosetting epoxy resin which is a raw material of the semiconductor package
  • thermoplastic resin which is a raw material of the housing
  • a semiconductor device has been made by a method different from insert molding.
  • a housing 51 having a connector terminal 50 is provided.
  • the connector terminal 50 is preformed by injection molding in a predetermined position of the housing 51 .
  • a surface of the package 52 that abuts against the housing 51 has an adhesive agent applied thereon.
  • the connecting portion 52 a of the package 52 is placed in contact with the connector terminal 50 , the package 52 is fixed to the housing 51 .
  • a space 53 in the housing 51 is filled with a sealant 54 such as liquid epoxy and silicone to seal the package 52 .
  • the above-mentioned manufacturing method in which the package 52 is sealed with the sealant 54 , requires more steps (i.e. three steps) compared to the manufacturing method by insert molding: a step of making the housing 51 having the connector terminal 50 , a step of adhering the package 52 to the housing 51 , and a step of filling the housing 51 with the sealant 54 . This complicates the manufacturing process as well as increases the manufacturing costs of the semiconductor device.
  • An object of the invention is to provide a semiconductor device that is easy to manufacture and has excellent moisture resistance.
  • Another object of the invention is to provide a semiconductor device that holds down its manufacturing costs.
  • the semiconductor device includes a housing and a semiconductor package.
  • the housing is formed of a first synthetic resin that is a thermoplastic resin.
  • the semiconductor package is formed of a second synthetic resin that is a thermosetting resin.
  • the package is sealed in the housing.
  • the package has a modified face that has adhesive properties to the first synthetic resin. The modified face is formed on a surface of the package by UV-irradiating the surface before the sealing of the package in the housing.
  • the present invention also provides a method of making a semiconductor device.
  • the method includes steps of: UV-irradiating a semiconductor package formed of thermosetting epoxy resin to modify its surface to be adhesive to polyamide; placing the package in a die; and filling a space in the die with melted polyamide or a melted thermoplastic resin including polyamide to seal the package by insert molding.
  • FIG. 1A is a schematic plan view of a semiconductor device.
  • FIG. 1B is a schematic cross-sectional view of the semiconductor device taken along the line B-B of the FIG. 1A.
  • FIG. 2 is a schematic cross-sectional view showing insert molding during the manufacturing process of the semiconductor device.
  • FIG. 3A is a schematic cross-sectional view showing a conventional manufacturing process before the sealant is applied.
  • FIG. 3B is a schematic cross-sectional view showing a conventional manufacturing process after the sealant is applied.
  • FIGS. 1 and 2 An embodiment of the present invention is described with reference to FIGS. 1 and 2 hereinafter.
  • a semiconductor device 11 includes a housing 12 .
  • the housing 12 is generally rectangular solid in shape and formed of thermoplastic resin.
  • the housing 12 is formed of polyamide (PA).
  • PA polyamide
  • a semiconductor package 13 is sealed in the housing 12 .
  • the package 13 is generally rectangular solid in shape and formed of thermosetting epoxy resin.
  • the surface 13 a of the package 13 is modified by UV irradiation. Specifically, the modified face 13 a of the package 13 has adhesive properties to the polyamide.
  • a plurality (two in this embodiment) of connector terminals 14 extend from the package 13 in parallel. Each terminal 14 extends out of the housing 12 with one end of each terminal being sealed in the housing 12 together with the package 13 .
  • the package 13 is formed of thermosetting epoxy resin by a conventional method.
  • the overall surface of the package 13 is irradiated by ultraviolet rays. This modifies the surface of the package 13 to be adhesive to polyamide.
  • the package 13 is then placed in a die 20 .
  • the die 20 includes an upper die 20 a and a lower die 20 b .
  • the dies 20 a , 20 b have a cavity that faces to each other so that a space 15 is defined in the die 20 when the dies 20 a , 20 b are positioned properly.
  • the dies 20 a , 20 b have a semi-cylindrical recess at their opposing end.
  • the two recesses forms cylindrical holes 20 c .
  • the internal diameter of the holes 20 c is designed to be approximately the same as the external diameter of the terminals 14 .
  • thermoplastic resin PA in this embodiment
  • PA melted thermoplastic resin
  • the housing 12 is insert molded.
  • the temperature at which the thermoplastic resin melts is lower than or the same as the temperature at which IC chips (not shown) in the package 13 shows heat resistance.
  • the upper and lower dies 20 a , 20 b are opened.
  • the housing 12 is formed with the package 13 and a part of the terminals 14 sealed. The semiconductor device 11 is completed.
  • the semiconductor device 11 can be manufactured in one step by insert molding. In other words, conventionally required steps: a step of performing a housing only, a step of adhering the package to the housing, and a step of filling the housing with the sealant, are abbreviated. Thus, the number of manufacturing steps is reduced and the semiconductor device 11 can be easily and inexpensively produced.
  • the surface of the package 13 is UV-irradiated and modified to have adhesive properties to polyamide.
  • the modified face 13 a ensures the adhesiveness between the housing 12 and the package 13 . Thus, and invasion of moisture from the gap between the terminal 14 and the housing 12 is prevented (and the integrity of the semiconductor device 11 is maintained). Thus, conventional problems, such as leaks or shorts, are avoided.
  • a single polyamide is used as a thermoplastic resin. This improves the adhesive properties between the package 13 and the housing 12 compared with those when a polymer alloy of polyamide and another resin is used.
  • the thermoplastic resin that forms the housing 12 is not limited to single PA.
  • a resin of polymer alloy of PA and PPS polyphenylene sulfide
  • the combination of PPS with PA improves heat resistance, dimensional stability, and low water absorption rate of the semiconductor device 11 compared with single PA, while keeping the adhesive properties between the package 13 and the housing 12 .
  • a resin of polymer alloy of PA and PBT may also be used.
  • PBT polybutylene telephthalate
  • the combination of PBT with PA improves low water absorption rate and abrasion resistance compared with single PA.
  • the terminal 14 may be a male connector.
  • the number of the terminal 14 is not limited to two but may be one or more than two.
  • the shape of the housing 12 and the package 13 is not limited to generally rectangular solid but may be varied in any suitable form.

Abstract

A semiconductor device includes a housing, which is formed of a polyamide-series thermoplastic resin, and semiconductor package sealed in the housing, which is formed of a thermosetting epoxy resin. The package has a modified face that is modified by UV-irradiation to have adhesive properties to polyamide. A plurality of connector terminals extend from the packages in parallel. A portion of the terminals is also sealed in the housing together with the package. Thus, the device is easily produced by insert molding and has excellent moisture resistance.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to sealing of a semiconductor device in which a semiconductor package and a housing containing the semiconductor package are formed of different synthetic resins. More particularly, the present invention relates to a semiconductor device in which a housing is formed of thermoplastic resin (a first synthetic resin) and a semiconductor package is formed of thermosetting epoxy resin (a second synthetic resin), and a method of making the same. [0001]
  • Semiconductor devices are sometimes made by insert molding by using thermoplastic resin to seal the semiconductor package made of thermosetting epoxy resin in the housing. However, thermosetting epoxy resin, which is a raw material of the semiconductor package, and thermoplastic resin, which is a raw material of the housing, have different reactions to heat. Thus, the adhesive properties between the two resins become poor after cooling and a gap may generate between them. In such a semiconductor device, problems such as a leak or a short may occur due to moisture that comes in from the gap between the package and the housing in certain circumstances. [0002]
  • To prevent this, a semiconductor device has been made by a method different from insert molding. First, as shown in FIG. 3A, a [0003] housing 51 having a connector terminal 50 is provided. The connector terminal 50 is preformed by injection molding in a predetermined position of the housing 51. When a semiconductor package 52 is placed in the housing 51, a surface of the package 52 that abuts against the housing 51 has an adhesive agent applied thereon. After the connecting portion 52 a of the package 52 is placed in contact with the connector terminal 50, the package 52 is fixed to the housing 51. Next, as shown in FIG. 3B, a space 53 in the housing 51 is filled with a sealant 54 such as liquid epoxy and silicone to seal the package 52.
  • The above-mentioned manufacturing method, in which the [0004] package 52 is sealed with the sealant 54, requires more steps (i.e. three steps) compared to the manufacturing method by insert molding: a step of making the housing 51 having the connector terminal 50, a step of adhering the package 52 to the housing 51, and a step of filling the housing 51 with the sealant 54. This complicates the manufacturing process as well as increases the manufacturing costs of the semiconductor device.
  • BRIEF SUMMARY OF THE INVENTION
  • An object of the invention is to provide a semiconductor device that is easy to manufacture and has excellent moisture resistance. [0005]
  • Another object of the invention is to provide a semiconductor device that holds down its manufacturing costs. [0006]
  • To achieve the foregoing and other objectives and in accordance with the purpose of the present invention, a semiconductor device is provided. The semiconductor device includes a housing and a semiconductor package. The housing is formed of a first synthetic resin that is a thermoplastic resin. The semiconductor package is formed of a second synthetic resin that is a thermosetting resin. The package is sealed in the housing. The package has a modified face that has adhesive properties to the first synthetic resin. The modified face is formed on a surface of the package by UV-irradiating the surface before the sealing of the package in the housing. [0007]
  • The present invention also provides a method of making a semiconductor device. The method includes steps of: UV-irradiating a semiconductor package formed of thermosetting epoxy resin to modify its surface to be adhesive to polyamide; placing the package in a die; and filling a space in the die with melted polyamide or a melted thermoplastic resin including polyamide to seal the package by insert molding. [0008]
  • Other aspects and advantages of the invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.[0009]
  • BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
  • The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together with the accompanying drawings in which: [0010]
  • FIG. 1A is a schematic plan view of a semiconductor device. [0011]
  • FIG. 1B is a schematic cross-sectional view of the semiconductor device taken along the line B-B of the FIG. 1A. [0012]
  • FIG. 2 is a schematic cross-sectional view showing insert molding during the manufacturing process of the semiconductor device. [0013]
  • FIG. 3A is a schematic cross-sectional view showing a conventional manufacturing process before the sealant is applied. [0014]
  • FIG. 3B is a schematic cross-sectional view showing a conventional manufacturing process after the sealant is applied.[0015]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • An embodiment of the present invention is described with reference to FIGS. 1 and 2 hereinafter. [0016]
  • As shown in FIGS. 1A and 1B, a [0017] semiconductor device 11 includes a housing 12. The housing 12 is generally rectangular solid in shape and formed of thermoplastic resin. In this embodiment, the housing 12 is formed of polyamide (PA). As shown in FIG. 1B, a semiconductor package 13 is sealed in the housing 12. The package 13 is generally rectangular solid in shape and formed of thermosetting epoxy resin. The surface 13 a of the package 13 is modified by UV irradiation. Specifically, the modified face 13 a of the package 13 has adhesive properties to the polyamide. A plurality (two in this embodiment) of connector terminals 14 extend from the package 13 in parallel. Each terminal 14 extends out of the housing 12 with one end of each terminal being sealed in the housing 12 together with the package 13.
  • A manufacturing process of the above-mentioned [0018] semiconductor device 11 is described with reference to FIG. 2.
  • First, the [0019] package 13 is formed of thermosetting epoxy resin by a conventional method. Next, the overall surface of the package 13 is irradiated by ultraviolet rays. This modifies the surface of the package 13 to be adhesive to polyamide.
  • The [0020] package 13 is then placed in a die 20. The die 20 includes an upper die 20 a and a lower die 20 b . The dies 20 a, 20 b have a cavity that faces to each other so that a space 15 is defined in the die 20 when the dies 20 a, 20 b are positioned properly. The dies 20 a, 20 b have a semi-cylindrical recess at their opposing end. When the upper die 20 a is positioned on the lower die 20 b, the two recesses forms cylindrical holes 20 c. The internal diameter of the holes 20 c is designed to be approximately the same as the external diameter of the terminals 14. When the package 13 is placed in the die 20 in a predetermined position, the terminals 14 that extend from the package 13 is guided through the holes 20 c out of the die 20.
  • Then, melted thermoplastic resin (PA in this embodiment) is poured through a [0021] gate 20 d provided in the upper die 20 a into the space 15. Thus, the housing 12 is insert molded. The temperature at which the thermoplastic resin melts is lower than or the same as the temperature at which IC chips (not shown) in the package 13 shows heat resistance. After the thermoplastic resin poured into the space 15 is cooled and hardened, the upper and lower dies 20 a, 20 b are opened. As shown in FIG. 1B, the housing 12 is formed with the package 13 and a part of the terminals 14 sealed. The semiconductor device 11 is completed.
  • The above-mentioned embodiment has following advantages. [0022]
  • The [0023] semiconductor device 11 can be manufactured in one step by insert molding. In other words, conventionally required steps: a step of performing a housing only, a step of adhering the package to the housing, and a step of filling the housing with the sealant, are abbreviated. Thus, the number of manufacturing steps is reduced and the semiconductor device 11 can be easily and inexpensively produced.
  • The surface of the [0024] package 13 is UV-irradiated and modified to have adhesive properties to polyamide. The modified face 13 a ensures the adhesiveness between the housing 12 and the package 13. Thus, and invasion of moisture from the gap between the terminal 14 and the housing 12 is prevented (and the integrity of the semiconductor device 11 is maintained). Thus, conventional problems, such as leaks or shorts, are avoided.
  • A single polyamide is used as a thermoplastic resin. This improves the adhesive properties between the [0025] package 13 and the housing 12 compared with those when a polymer alloy of polyamide and another resin is used.
  • It should be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention. Particularly, it should be understood that the invention may be embodied in the following forms. [0026]
  • The thermoplastic resin that forms the [0027] housing 12 is not limited to single PA. For example, a resin of polymer alloy of PA and PPS (polyphenylene sulfide) may be used. The combination of PPS with PA improves heat resistance, dimensional stability, and low water absorption rate of the semiconductor device 11 compared with single PA, while keeping the adhesive properties between the package 13 and the housing 12.
  • A resin of polymer alloy of PA and PBT (polybutylene telephthalate) may also be used. The combination of PBT with PA improves low water absorption rate and abrasion resistance compared with single PA. [0028]
  • The terminal [0029] 14 may be a male connector.
  • The number of the terminal [0030] 14 is not limited to two but may be one or more than two.
  • The shape of the [0031] housing 12 and the package 13 is not limited to generally rectangular solid but may be varied in any suitable form.
  • Therefore, the present examples and embodiments are to be considered as illustrative and not restrictive and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims. [0032]

Claims (12)

1. A semiconductor device comprising:
a housing formed of a first synthetic resin that is a thermoplastic resin; and
a semiconductor package formed of a second synthetic resin that is a thermosetting resin, wherein the package is sealed in the housing, wherein the package has a modified face that has adhesive properties to the first synthetic resin, wherein the modified face is formed on a surface of the package by UV-irradiating the surface before the sealing of the package in the housing.
2. A semiconductor device according to claim 1, wherein the package is sealed in the housing by insert molding.
3. A semiconductor device according to claim 1, wherein the first synthetic resin comprises polyamide or a thermoplastic resin including polyamide.
4. A semiconductor device according to claim 3, wherein the second synthetic resin comprises a thermosetting epoxy resin.
5. A semiconductor device according to claim 3, wherein the thermoplastic resin is a polymer alloy of polyamide and polyphenylene sulfide.
6. A semiconductor device according to claim 3, wherein the thermoplastic resin is a polymer alloy of polyamide and polybutylene telephthalate.
7. A semiconductor device comprising:
a housing formed of polyamide or a thermoplastic resin including polyamide; and
a semiconductor package formed of a thermosetting epoxy resin, wherein the package is sealed in the housing, wherein the semiconductor package has a modified face that has adhesive properties to the polyamide or the thermoplastic resin including polyamide, wherein the modified face is formed on a surface of the package by UV-irradiating the surface before the sealing of the package in the housing.
8. A semiconductor device according to claim 7, wherein the thermoplastic resin is a polymer alloy of polyamide and polyphenylene sulfide.
9. A semiconductor device according to claim 7, wherein the thermoplastic resin is a polymer alloy of polyamide and polybutylene telephthalate.
10. A method of making a semiconductor device comprising:
UV-irradiating a semiconductor package formed of thermosetting epoxy resin to modify its surface to be adhesive to polyamide;
placing the package in a die; and
filling a space in the die with melted polyamide or a melted thermoplastic resin including polyamide to seal the package by insert molding.
11. A method according to claim 10, wherein the thermoplastic resin is a polymer alloy of polyamide and polyphenylene sulfide.
12. A method according to claim 10, wherein the thermoplastic resin is a polymer alloy of polyamide and polybutylene telephthalate.
US10/246,126 2001-09-20 2002-09-18 Semiconductor device and method of making the same Abandoned US20030052396A1 (en)

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US20090023253A1 (en) 2009-01-22
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EP1296371A2 (en) 2003-03-26
JP4620303B2 (en) 2011-01-26
US7588962B2 (en) 2009-09-15

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