US20020192982A1 - Method of forming a carbon doped oxide layer on a substrate - Google Patents
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- US20020192982A1 US20020192982A1 US09/867,869 US86786901A US2002192982A1 US 20020192982 A1 US20020192982 A1 US 20020192982A1 US 86786901 A US86786901 A US 86786901A US 2002192982 A1 US2002192982 A1 US 2002192982A1
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 claims description 5
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 5
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
Definitions
- the present invention relates to a method of forming a carbon doped oxide layer on a substrate, when making a semiconductor device.
- Semiconductor devices include metal layers that are insulated from each other by dielectric layers. As device features shrink, reducing the distance between the metal layers and between metal lines on each layer, capacitance increases. To address this problem, insulating materials that have a relatively low dielectric constant are being used in place of silicon dioxide to form the dielectric layer that separates the metal lines.
- a material that may be used to form such a low k dielectric layer is carbon doped oxide (“CDO”). Using this material instead of silicon dioxide to separate metal lines may yield a device having reduced propagation delay, cross-talk noise and power dissipation.
- CDO layer may be deposited on a substrate using a plasma enhanced chemical vapor deposition (“PECVD”) process. When using such a process to form such a layer, gases that provide a source of silicon, oxygen, and carbon must be fed into a PECVD reactor.
- PECVD plasma enhanced chemical vapor deposition
- gases examples include those having the formula (CH 3 ) x Si(OCH3) 4-x , e.g., tetramethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, and trimethylmethoxysilane.
- a background gas e.g., an inert gas such as helium, may be fed into the reactor at the same time. That reactor may then be operated at conventional pressures, temperatures, RF and power for a time sufficient to deposit a CDO layer of the desired thickness onto the substrate.
- FIG. 1 provides a schematic representation of a CVD chamber for a PECVD reactor.
- FIG. 2 represents a cross-section of a structure that includes a CDO layer deposited on a substrate, which may be generated when forming a semiconductor device.
- a method for forming a carbon doped oxide layer on a substrate comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from the group consisting of gases that have the formula (CH 3 ) x Si(OCH3) 4-x . Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus, which is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.
- a precursor gas that is selected from the group consisting of gases that have the formula (CH 3 ) x Si(OCH3) 4-x .
- a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus, which is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.
- a substrate e.g., a silicon wafer upon which various conducting and insulating layers may have been formed
- a chemical vapor deposition apparatus preferably a PECVD reactor, e.g., PECVD reactor 100 illustrated in FIG. 1.
- gases that provide a source of carbon, silicon, and oxygen are introduced into reactor 100 in the conventional manner.
- Gases that may provide a source of these elements include those that have the formula (CH 3 ) x Si(OCH3) 4-x .
- gases include those that contain tetramethoxysilane, methyltrimethoxysilane, dimethyidimethoxysilane, and/or trimethylmethoxysilane.
- a particularly preferred precursor gas is dimethyidimethoxysilane. Note that while these substances are introduced into the reactor as gases, they may be liquids at standard temperature and pressure.
- a background gas e.g., an inert gas such as helium
- oxygen and nitrogen are also introduced into the reactor.
- gases may be introduced at the following flow rates: Precursor gas flow rate 90-200 sccm Background gas flow rate 20-200 sccm Oxygen gas flow rate 1-20 sccm Nitrogen gas flow rate 15-300 sccm
- these gases are preferably introduced into the reactor at the flow rates specified above, they may, of course, be fed into the reactor at flow rates that fall outside the indicated ranges, without departing from the spirit and scope of the present invention.
- Those gases may be introduced into reactor 100 at conventional temperatures and pressures.
- Optimal operating conditions may, of course, depend upon the composition of the gas streams fed into the reactor, the type of reactor used, and the desired properties for the resulting CDO layer.
- a CDO layer with acceptable properties may be formed by maintaining the reactor pressure between about 2.0 and about 10.0 Torr (more preferably between about 3.0 and about 6.0 Torr), the susceptor temperature between about 350° C.
- RF energy is applied—preferably at standard frequencies and at between about 1,600 and about 1,800 watts.
- oxygen and nitrogen are introduced into the reactor such that they constitute, in combination, less than about 5% of the total gas flow.
- the nitrogen and oxygen should be fed into the reactor at a flow rate ratio that is between about 1:1 and about 20:1. Feeding into reactor 100 this combination of precursor and background gases along with oxygen and nitrogen, under the above specified operating conditions, should cause CDO layer 200 to form on substrate 201 (as illustrated in FIG. 2) such that CDO layer 200 has a dielectric constant that is less than or equal to about 3.0.
- the process of the present invention may enable the generation of a CDO layer that has a slightly lower dielectric constant, when compared to the dielectric constant of CDO layers made from processes that apply a (CH 3 ) x Si(OCH3) 4-x precursor gas without oxygen and nitrogen.
- the process of the present invention enables a CDO layer to be deposited on a substrate at a rate that exceeds about 7,000 angstroms per minute. Increasing that deposition rate enhances the manufacturability of processes for making semiconductor devices that include CDO insulating layers.
Abstract
A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4-x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.
Description
- The present invention relates to a method of forming a carbon doped oxide layer on a substrate, when making a semiconductor device.
- Semiconductor devices include metal layers that are insulated from each other by dielectric layers. As device features shrink, reducing the distance between the metal layers and between metal lines on each layer, capacitance increases. To address this problem, insulating materials that have a relatively low dielectric constant are being used in place of silicon dioxide to form the dielectric layer that separates the metal lines.
- A material that may be used to form such a low k dielectric layer is carbon doped oxide (“CDO”). Using this material instead of silicon dioxide to separate metal lines may yield a device having reduced propagation delay, cross-talk noise and power dissipation. A CDO layer may be deposited on a substrate using a plasma enhanced chemical vapor deposition (“PECVD”) process. When using such a process to form such a layer, gases that provide a source of silicon, oxygen, and carbon must be fed into a PECVD reactor. Examples of such gases include those having the formula (CH 3)xSi(OCH3)4-x, e.g., tetramethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, and trimethylmethoxysilane. A background gas, e.g., an inert gas such as helium, may be fed into the reactor at the same time. That reactor may then be operated at conventional pressures, temperatures, RF and power for a time sufficient to deposit a CDO layer of the desired thickness onto the substrate.
- Although processes that use (CH 3)xSi(OCH3)4-x precursors to form CDO layers may produce layers that have a dielectric constant that is less than 3.0, those processes generate those layers at a relatively low deposition rate. Accordingly, there is a need for an improved process for making a CDO insulating layer. There is a need for such a process that generates a CDO layer from a (CH3)xSi(OCH3)4-x precursor at an increased deposition rate. The method of the present invention provides such a process.
- FIG. 1 provides a schematic representation of a CVD chamber for a PECVD reactor.
- FIG. 2 represents a cross-section of a structure that includes a CDO layer deposited on a substrate, which may be generated when forming a semiconductor device.
- A method is described for forming a carbon doped oxide layer on a substrate. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from the group consisting of gases that have the formula (CH 3)xSi(OCH3)4-x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus, which is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.
- In the following description, a number of details are set forth to provide a thorough understanding of the present invention. It will be apparent to those skilled in the art, however, that the invention may be practiced in many ways other than those expressly described here. The invention is thus not limited by the specific details disclosed below.
- In the method of the present invention, a substrate, e.g., a silicon wafer upon which various conducting and insulating layers may have been formed, is placed in a chemical vapor deposition apparatus—preferably a PECVD reactor, e.g.,
PECVD reactor 100 illustrated in FIG. 1. To form a CDO layer on such a substrate, in accordance with the method of the present invention, gases that provide a source of carbon, silicon, and oxygen are introduced intoreactor 100 in the conventional manner. - Gases that may provide a source of these elements include those that have the formula (CH 3)xSi(OCH3)4-x. Such gases include those that contain tetramethoxysilane, methyltrimethoxysilane, dimethyidimethoxysilane, and/or trimethylmethoxysilane. A particularly preferred precursor gas is dimethyidimethoxysilane. Note that while these substances are introduced into the reactor as gases, they may be liquids at standard temperature and pressure.
- At the same time the gas that provides this source of silicon, carbon, and oxygen is fed into the reactor, a background gas, e.g., an inert gas such as helium, is fed into the reactor. In the method of the present invention, oxygen and nitrogen are also introduced into the reactor. These gases may be introduced at the following flow rates:
Precursor gas flow rate 90-200 sccm Background gas flow rate 20-200 sccm Oxygen gas flow rate 1-20 sccm Nitrogen gas flow rate 15-300 sccm - Although these gases are preferably introduced into the reactor at the flow rates specified above, they may, of course, be fed into the reactor at flow rates that fall outside the indicated ranges, without departing from the spirit and scope of the present invention. Those gases may be introduced into
reactor 100 at conventional temperatures and pressures. Optimal operating conditions may, of course, depend upon the composition of the gas streams fed into the reactor, the type of reactor used, and the desired properties for the resulting CDO layer. A CDO layer with acceptable properties may be formed by maintaining the reactor pressure between about 2.0 and about 10.0 Torr (more preferably between about 3.0 and about 6.0 Torr), the susceptor temperature between about 350° C. and about 450° C., and the electrode spacing at between about 15 and about 50 mm (more preferably between about 24 and about 26 mm). To generate a plasma from such a mixture of gases, RF energy is applied—preferably at standard frequencies and at between about 1,600 and about 1,800 watts. - In a particularly preferred embodiment of the present invention, oxygen and nitrogen are introduced into the reactor such that they constitute, in combination, less than about 5% of the total gas flow. For optimum results, the nitrogen and oxygen should be fed into the reactor at a flow rate ratio that is between about 1:1 and about 20:1. Feeding into
reactor 100 this combination of precursor and background gases along with oxygen and nitrogen, under the above specified operating conditions, should cause CDO layer 200 to form on substrate 201 (as illustrated in FIG. 2) such that CDO layer 200 has a dielectric constant that is less than or equal to about 3.0. - The process of the present invention may enable the generation of a CDO layer that has a slightly lower dielectric constant, when compared to the dielectric constant of CDO layers made from processes that apply a (CH 3)xSi(OCH3)4-x precursor gas without oxygen and nitrogen. In addition, the process of the present invention enables a CDO layer to be deposited on a substrate at a rate that exceeds about 7,000 angstroms per minute. Increasing that deposition rate enhances the manufacturability of processes for making semiconductor devices that include CDO insulating layers.
- Although the foregoing description has specified certain steps, materials, and equipment that may be used in the above described method for forming a CDO layer on a substrate, those skilled in the art will appreciate that many modifications and substitutions may be made. Accordingly, it is intended that all such modifications, alterations, substitutions and additions be considered to fall within the spirit and scope of the invention as defined by the appended claims.
Claims (15)
1. A method of forming a carbon doped oxide layer on a substrate comprising:
introducing into a chemical vapor deposition apparatus a precursor gas that is selected from the group consisting of gases that have the formula (CH3)xSi(OCH3)4-x;
simultaneously introducing a background gas, oxygen and nitrogen into the chemical vapor deposition apparatus; then
operating the apparatus under conditions that cause a carbon doped oxide layer to form on the substrate.
2. The method of claim 1 wherein the chemical vapor deposition apparatus is a plasma enhanced chemical vapor deposition reactor.
3. The method of claim 2 wherein the resulting carbon doped oxide has a dielectric constant that is less than or equal to about 3.0.
4. The method of claim 3 wherein the precursor gas is selected from the group consisting of tetramethoxysilane, methyltrimethoxysilane, dimethyidimethoxysilane, and trimethylmethoxysilane.
5. The method of claim 4 wherein the background gas comprises an inert gas.
6. The method of claim 5 wherein the background gas comprises helium and further comprising:
introducing the precursor gas into the plasma enhanced chemical vapor deposition reactor at a rate of between about 90 and about 200 sccm; introducing the background gas into the plasma enhanced chemical vapor deposition reactor at a rate of between about 20 and about 200 sccm; introducing oxygen into the plasma enhanced chemical vapor deposition reactor at a rate of between about 1 and about 20 sccm; and introducing nitrogen into the plasma enhanced chemical vapor deposition reactor at a rate of between about 15 and about 300 sccm.
7. The method of claim 6 wherein nitrogen and oxygen are introduced into the plasma enhanced chemical vapor deposition reactor at a flow rate ratio that is between about 1:1 and about 20:1.
8. The method of claim 7 wherein the carbon doped oxide is deposited on the substrate at a rate that exceeds about 7,000 angstroms per minute.
9. A method of forming a semiconductor device comprising:
forming on a substrate a carbon doped oxide layer by
introducing into a plasma enhanced chemical vapor deposition reactor a precursor gas that is selected from the group consisting of tetramethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, and trimethylmethoxysilane;
simultaneously introducing a background gas, oxygen and nitrogen into the plasma enhanced chemical vapor deposition reactor; then
operating the reactor under conditions that cause a carbon doped oxide layer to form on the substrate at a rate that exceeds about 7,000 angstroms per minute.
10. The method of claim 9 wherein the background gas comprises helium, which is added to the nitrogen and oxygen that is fed into the reactor.
11. The method of claim 10 further comprising:
introducing the precursor gas into the plasma enhanced chemical vapor deposition reactor at a rate of between about 90 and about 200 sccm;
introducing the background gas into the plasma enhanced chemical vapor deposition reactor at a rate of between about 20 and about 200 sccm;
introducing oxygen into the plasma enhanced chemical vapor deposition reactor at a rate of between about 1 and about 20 sccm; and
introducing nitrogen into the plasma enhanced chemical vapor deposition reactor at a rate of between about 15 and about 300 sccm.
12. The method of claim 11 wherein nitrogen and oxygen are introduced into the plasma enhanced chemical vapor deposition reactor at a flow rate ratio that is between about 1:1 and about 20:1.
13. A method of forming a semiconductor device comprising:
forming on a substrate a carbon doped oxide layer by
introducing into a plasma enhanced chemical vapor deposition reactor at a rate of between about 90 and about 200 sccm a precursor gas that is selected from the group consisting of tetramethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, and trimethylmethoxysilane;
simultaneously introducing helium at a rate of between about 20 and about 200 sccm, oxygen at a rate of between about 1 and about 20 sccm, and nitrogen at a rate of between about 15 and about 300 sccm into the plasma enhanced chemical vapor deposition reactor; then
operating the reactor under conditions that cause a carbon doped oxide layer to form on the substrate.
14. The method of claim 13 wherein nitrogen and oxygen are introduced into the plasma enhanced chemical vapor deposition reactor at a flow rate ratio that is between about 1:1 and about 20:1.
15. The method of claim 14 wherein the carbon doped oxide is deposited at a rate that exceeds about 7,000 angstroms per minute.
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| US09/867,869 US6482754B1 (en) | 2001-05-29 | 2001-05-29 | Method of forming a carbon doped oxide layer on a substrate |
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| US09/867,869 US6482754B1 (en) | 2001-05-29 | 2001-05-29 | Method of forming a carbon doped oxide layer on a substrate |
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| US20020192982A1 true US20020192982A1 (en) | 2002-12-19 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596655B1 (en) | 1998-02-11 | 2003-07-22 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
| US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
| US6660663B1 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds |
| US6730593B2 (en) | 1998-02-11 | 2004-05-04 | Applied Materials Inc. | Method of depositing a low K dielectric with organo silane |
| US6806207B2 (en) | 1998-02-11 | 2004-10-19 | Applied Materials Inc. | Method of depositing low K films |
| US20080283972A1 (en) * | 2004-02-19 | 2008-11-20 | Degussa Ag | Silicon Compounds for Producing Sio2-Containing Insulating Layers on Chips |
| GB2442996B (en) * | 2004-07-28 | 2009-04-01 | Intel Corp | Planarizing a semiconductor structure to form replacement metal gates |
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