US20020137284A1 - Tungsten gate MOS transistor and memory cell and method of making same - Google Patents
Tungsten gate MOS transistor and memory cell and method of making same Download PDFInfo
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- US20020137284A1 US20020137284A1 US10/059,119 US5911902A US2002137284A1 US 20020137284 A1 US20020137284 A1 US 20020137284A1 US 5911902 A US5911902 A US 5911902A US 2002137284 A1 US2002137284 A1 US 2002137284A1
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- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 62
- 239000010937 tungsten Substances 0.000 title claims abstract description 62
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000015654 memory Effects 0.000 title abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 238000007667 floating Methods 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 56
- 229920005591 polysilicon Polymers 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- -1 tungsten nitride Chemical class 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005546 reactive sputtering Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 230000002939 deleterious effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 153
- 230000008901 benefit Effects 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Definitions
- the present invention relates to a method of manufacturing a MOS transistor and a memory cell on a common semiconductor substrate and the device obtained thereby.
- the present invention has particular utility in manufacturing high-density integration semiconductor memory devices, such as flash electrically erasable programmable read only memories (flash EEPROMS), with design rules of about 0.18 micron and under.
- flash EEPROMS flash electrically erasable programmable read only memories
- Flash EEPROM is so named because the contents of all of the memory's array cells can be erased simultaneously at high speed. Flash EEPROMs, unlike floating gate EEPROMs which include a separate select transistor in each cell to provide for individual byte erasure, eliminate the select transistor and provide bulk erasure. As a consequence, flash EEPROM cells can be made much smaller than floating gate EEPROM cells fabricated under the same design rules, thus permitting formation of high density memories having easy erasability and reprogrammability.
- Flash EEPROMs typically comprise a floating gate memory cell, which includes a source region, a drain region, and a channel region formed in a semiconductor substrate, usually a silicon wafer, and a floating gate formed above the substrate and located between the channel region and a control gate.
- Most flash EEPROM cells use a “double-poly” structure, wherein an upper layer formed of e.g., polysilicon and termed “poly 2”, forms the control gate and a lower layer of polysilicon, termed “poly 1”, forms the floating gate.
- the gate oxide layer is typically about 10 nm thick and the interpoly dielectric typically comprises a three layer composite of silicon oxide/silicon nitride/silicon oxide layers (“ONO”) of total thickness of about 25 nm or less.
- a high voltage such as about 10 volts
- a moderately high voltage e.g., about 5 volts
- a high negative voltage such as ⁇ 10 volts
- a moderately high voltage e.g., about 5 volts
- a high negative voltage such as ⁇ 10 volts
- a moderately high voltage e.g., about 7 volts
- a sufficiently large electric field is developed across the tunnel oxide and electrons can tunnel out from the floating gate either at the source terminal (SEE procedure) or through the channel region (CE procedure).
- Flash EEPROM systems conventionally comprise a two-dimensional array of floating gate memory cells such as described above.
- the array typically includes several strings of floating gate memory transistors, each transistor being coupled to the neighboring transistor in the string by coupling the source of one device to the drain of the neighboring device, thereby forming bit lines.
- a CMOS transistor referred to as a “row selector”, is employed at one end of each word line to supply program voltage on demand to each of the word lines.
- the row selecting transistor and other transistors e.g., for power supply purposes, are formed in the semiconductor wafer substrate concurrent with the formation of the memory cell array and typically employ much of the same processing steps and conditions.
- the transistor termed a “poly 2 periphery transistor” is formed on a peripheral portion of the semiconductor substrate and utilizes the “poly 2”, or upper polysilicon layer used to form the control gates of the memory array cells.
- a layer of a refractory metal e.g., titanium (Ti) or tungsten (W) is typically formed over the “poly 2” electrode (with or without interposition of adhesion and/or barrier layer(s)) and suitably patterned and annealed.
- Ti titanium
- W tungsten
- tungsten as a gate electrode contact metal in memory array manufacture is oxidation thereof during high temperature (e.g., about 900° C.) furnace processing under an oxidizing ambient during MOS transistor and flash memory cell fabrication.
- An advantage of the present invention is a method of manufacturing a high-density flash memory array with an improved control gate electrode contact structure.
- Another advantage of the present invention is a method of manufacturing a flash memory array including a control gate electrode structure which is resistant to oxidation during high temperature processing in an oxidizing ambient.
- Still another advantage of the present invention is a method of simultaneously forming oxidation resistant tungsten-based contacts to the gate electrode of a MOS transistor and the control gate electrode of a memory cell of a flash EEPROM.
- a still further advantage of the present invention is provision of a high density integration flash EEPROM semiconductor device having a tungsten-based gate electrode contact structure resistant to oxidation.
- a method of manufacturing a semiconductor device which method comprises:
- the semiconductor device comprises a transistor
- the layer stack forming comprises forming same on at least a peripheral portion of the substrate surface
- the electrically conductive polysilicon layer (b) comprises a gate electrode of the transistor
- the tungsten layer (d) comprises a gate electrode contact.
- the method further comprises, after forming gate oxide layer (a) but prior to forming polysilicon layer (b), the steps of:
- the method further comprising the step of selectively removing portions of polysilicon layer (a′) and interpoly dielectric layer (a′′) to thereby expose sidewall surfaces thereof in substantial vertical registry with the exposed sidewall surfaces of layers (b)-(e);
- the semiconductor device comprises a flash EEPROM
- polysilicon layer (a′) comprises a floating gate electrode
- polysilicon electrode (b) comprises a control gate electrode
- tungsten layer (d) comprises a low sheet resistance control gate electrode contact.
- polysilicon layer (b) corresponds to “poly 2”
- polysilicon layer (a′) corresponds to “poly 1”
- the barrier material layer (c) comprises titanium nitride or tungsten nitride
- the interpoly dielectric layer (a′′) comprises a silicon oxide/silicon nitride/silicon oxide (“ONO”) composite
- the annealing comprises heating in a furnace in an oxygen containing ambient at a temperature of from about 800° C. to about 950° C. for from about 30 min. to about 60 min.
- a semiconductor device structure comprises:
- a semiconductor substrate comprising silicon and having a surface with at least one active device region formed therein or thereon;
- the semiconductor device structure comprises a transistor and the at least one active device region is formed at least at a peripheral portion of the semiconductor substrate.
- the semiconductor device structure comprises a flash-type EEPROM
- polysilicon layer (a′) comprises a floating gate electrode
- polysilicon layer (b) comprises a control gate electrode
- FIGS. 1 ( a )- 1 ( h ) and 2 ( a )- 2 ( h ) are simplified, cross-sectional schematic diagrams illustrating process steps for forming “poly 2” peripheral transistor and stacked-gate memory cell portions, respectively, of a flash-type EEPROM device, in accordance with an embodiment of the present invention.
- Layer stack L 1 for forming the peripheral transistor comprises, in sequence, a gate oxide layer 2 on the upper surface of substrate 1 , an electrically conductive polysilicon gate electrode layer 3 (“poly 2”) on gate oxide layer 2 , a barrier material layer 4 of titanium nitride (TiN) or tungsten nitride (WN x ) on polysilicon layer 3 , a tungsten gate electrode contact layer 5 on barrier material layer 4 , and silicon nitride layer 6 on tungsten contact layer 5 .
- Layer stack L 2 for forming a memory cell comprises, in addition to the above described layers 2 - 6 , a further electrically conductive polysilicon gate electrode layer 7 (“poly 1”) formed on gate oxide layer 2 and an interpoly dielectric layer 8 , typically a silicon oxide/silicon nitride/silicon oxide (“ONO”) composite, formed on polysilicon layer 7 and below polysilicon layer 3 (“poly 2”).
- poly 1 polysilicon gate electrode layer 7
- interpoly dielectric layer 8 typically a silicon oxide/silicon nitride/silicon oxide (“ONO”) composite, formed on polysilicon layer 7 and below polysilicon layer 3 (“poly 2”).
- Layers 2 - 8 typically are formed utilizing well-known oxidative, reactive, physical vapor, and/or chemical vapor deposition techniques, the details of which are omitted from the description for brevity, except as noted.
- a preferred method for forming barrier material layer 4 comprises reactive sputtering of a titanium or tungsten target in a nitrogen (N 2 ) containing atmosphere.
- the use of a tungsten target has an advantage in that the same target can be used, in sequence, for formation of the overlying tungsten contact layer 5 by non-reactive sputtering.
- Tungsten contact layer 5 can also be formed by a chemical vapor deposition process (CVD) utilizing e.g., tungsten hexafluoride (WF 6 ). Suitable ranges of thickness as well as preferred thicknesses for each of the layers of the layer stacks are indicated in Table 1 below.
- CVD chemical vapor deposition process
- tungsten hexafluoride WF 6
- Table 1 Suitable ranges of thickness as well as preferred thicknesses for each of the layers of the layer stacks are indicated in Table 1 below.
- Table 1 TABLE 1 Preferred Layer Material Thickness Range, ⁇ Thickness, ⁇ 2 Silicon oxide 25-150 70 3
- a bottom anti-reflection coating layer 9 (“BARC”) is formed atop the uppermost, silicon nitride layer 6 of each layer stack, followed by formation thereon of a patterned photoresist layer 10 , in a known manner. Then layers 4 - 6 , respectively formed of titanium nitride or tungsten nitride, tungsten, and silicon nitride, are etched along with BARC layer 9 , as by reactive ion etching (RIE), using patterned photoresist layer 10 as an etch mask and polysilicon layer 3 (poly 2 ) as an etch stop. After removal of the photoresist layer 10 along with the underlying portion of BARC layer 9 , the structures shown in FIGS. 1 ( b ) and 2 ( b ) are obtained.
- RIE reactive ion etching
- a second silicon nitride film is deposited over the thus-patterned layer stacks so as to cover all exposed surfaces thereof and anisotropically etched, as by reactive ion etching, to remove a major portion of the thickness of the second silicon nitride film formed on the upper surface of the first silicon nitride film 6 , while leaving “spacer” portions 11 of the second silicon nitride covering the sidewall surfaces of the layer stacks, as shown in FIGS. 1 ( c ) and 2 ( c ).
- Spacer portions 11 are typically tapered in width from their lower ends proximate polysilicon layer 3 to essentially no width at their upper ends proximate silicon nitride “capping” layer 6 . Suitable widths for the lower end portions of the tapered spacer portions 11 are from about 500 ⁇ to about 2500 ⁇ .
- the combination of silicon nitride “capping” layer 6 and sidewall spacer portions 11 serves to effectively encapsulate tungsten gate electrode contact layer 5 and prevent deleterious oxidation thereof during subsequent high temperature treatments performed in an oxidizing ambient, e.g., furnace annealing in an oxygen containing atmosphere at a temperature of from about 800° C. to about 950° C. for from about 30 min. to about 60 min.
- an oxidizing ambient e.g., furnace annealing in an oxygen containing atmosphere at a temperature of from about 800° C. to about 950° C. for from about 30 min. to about 60 min.
- the widths and densities (alternatively, porosities) of both silicon nitride layers are selected in accordance with the subsequent processing conditions to effectively preclude entry of oxidants (e.g., O 2 ) thereinto for reaction with tungsten contact layer 5 .
- the as-deposited thickness of the silicon nitride capping layer 6 should be sufficiently thick to
- polysilicon layer 3 is etched away, as by reactive ion etching, using silicon nitride capping layer 6 as a self-aligned hard mask.
- the resulting structures are as shown in FIGS. 1 ( d ) and 2 ( d ).
- another dry (e.g., a reactive ion) etch is performed to remove the exposed portions of the ONO composite dielectric layer 8 and polysilicon layer 7 (poly 1 ), again using silicon nitride capping layer 6 as a self-aligned mask.
- Etch selectivity during this process is high against silicon nitride and therefore, the silicon nitride “capping” layer 6 retains sufficient thickness to prevent oxidation of the tungsten contact layer 5 during any subsequent high temperature annealing processing, as may be seen from FIG. 2( e ).
- a further technological advantage attendant the inventive process wherein silicon nitride “capping” layer 6 remains over the tungsten contact layer throughout processing is the ability to perform a high selectivity etch to remove the field oxide in a later step. Again, the combination of silicon “capping” layer 6 and sidewall spacer layer portions 11 effectively prevents oxidation of the tungsten contact layer 5 during any high temperature processing associated therewith.
- a series of light and medium dosage ion implantation steps are next performed to form active regions of differing dopant density and profile in the semiconductor substrate 1 , such as, but not limited to, source and drain regions 12 and 13 .
- a high temperature furnace annealing step at a temperature of from about 800° C. to about 1000° C., e.g., preferably about 900° C., is performed for from about 15 min. to about 60 min., preferably about 30 min., between successive implantations of differing dosage in order to form a pre-low dosage implant layer at a thickness of about 75 ⁇ .
- tungsten electrode contact layer 5 is effectively prevented from oxidation during this step by virtue of the silicon nitride encapsulating layers 6 and 11 .
- oxide spacer layer 14 is formed to a thickness of from about 500 ⁇ to about 2000 ⁇ , preferably about 1000 ⁇ , on the exposed surfaces of the layer stacks L 1 and L 2 , as well as on the exposed surface of the substrate 1 .
- the oxide layer 14 is selectively etched as shown in FIG. 2( f ), using the silicon nitride capping layer 6 as an etch stop.
- FIGS. 1 ( g ) and 2 ( g ) an additional layer of oxide is then deposited on the side surfaces of oxide layer 14 , resulting in the formation of thicker sidewall spacer layers 15 , and oxide on the upper surface of the layer stack is removed by selective etching.
- source/drain N + regions 16 and Vss connections are formed by ion implantation, in conventional manner.
Abstract
Description
- This application claims priority from provisional patent application Serial No. 60/152,126, filed Sep. 2, 1999, the entire disclosure of which is incorporated herein by reference.
- The present invention relates to a method of manufacturing a MOS transistor and a memory cell on a common semiconductor substrate and the device obtained thereby. The present invention has particular utility in manufacturing high-density integration semiconductor memory devices, such as flash electrically erasable programmable read only memories (flash EEPROMS), with design rules of about 0.18 micron and under.
- The flash EEPROM is so named because the contents of all of the memory's array cells can be erased simultaneously at high speed. Flash EEPROMs, unlike floating gate EEPROMs which include a separate select transistor in each cell to provide for individual byte erasure, eliminate the select transistor and provide bulk erasure. As a consequence, flash EEPROM cells can be made much smaller than floating gate EEPROM cells fabricated under the same design rules, thus permitting formation of high density memories having easy erasability and reprogrammability.
- Conventional flash EEPROMs typically comprise a floating gate memory cell, which includes a source region, a drain region, and a channel region formed in a semiconductor substrate, usually a silicon wafer, and a floating gate formed above the substrate and located between the channel region and a control gate. Most flash EEPROM cells use a “double-poly” structure, wherein an upper layer formed of e.g., polysilicon and termed “
poly 2”, forms the control gate and a lower layer of polysilicon, termed “poly 1”, forms the floating gate. The gate oxide layer is typically about 10 nm thick and the interpoly dielectric typically comprises a three layer composite of silicon oxide/silicon nitride/silicon oxide layers (“ONO”) of total thickness of about 25 nm or less. - In operation, to program the memory cell, typically by Channel Hot Electron (“CHE”) injection, a high voltage, such as about 10 volts, is applied to the control gate and a moderately high voltage, e.g., about 5 volts, is applied to the drain terminal while the source and substrate terminals are at ground potential To erase the cell. either a Source Edge Erase (“SEE”) or a Channel Erase (“CE”) procedure can be utilized. According to the SEE procedure, a high negative voltage, such as −10 volts, is applied to the control gate and a moderately high voltage, e.g., about 5 volts, is applied to the source terminal while the drain potential floats. According to the CE procedure, a high negative voltage, such as −10 volts, is applied to the control gate and a moderately high voltage, e.g., about 7 volts, is applied to the device body (e.g., a well) while the source and drain potentials float. In either instance, a sufficiently large electric field is developed across the tunnel oxide and electrons can tunnel out from the floating gate either at the source terminal (SEE procedure) or through the channel region (CE procedure).
- Flash EEPROM systems conventionally comprise a two-dimensional array of floating gate memory cells such as described above. The array typically includes several strings of floating gate memory transistors, each transistor being coupled to the neighboring transistor in the string by coupling the source of one device to the drain of the neighboring device, thereby forming bit lines. A plurality of word lines, perpendicular to the strings, each connect to the control gate of one memory cell of each string.
- A CMOS transistor, referred to as a “row selector”, is employed at one end of each word line to supply program voltage on demand to each of the word lines. The row selecting transistor and other transistors, e.g., for power supply purposes, are formed in the semiconductor wafer substrate concurrent with the formation of the memory cell array and typically employ much of the same processing steps and conditions. In some instances, the transistor, termed a “
poly 2 periphery transistor” is formed on a peripheral portion of the semiconductor substrate and utilizes the “poly 2”, or upper polysilicon layer used to form the control gates of the memory array cells. - In order to electrically contact the “
poly 2” layer forming the gate electrode of such peripheral transistors and the control gate electrode of the memory array cells, a layer of a refractory metal, e.g., titanium (Ti) or tungsten (W), is typically formed over the “poly 2” electrode (with or without interposition of adhesion and/or barrier layer(s)) and suitably patterned and annealed. The use of tungsten for forming such contacts is particularly attractive because tungsten—based polysilicon gate electrode contacts can be formed with sub-micron sized dimensions (D. Hisamoto et al., 1995 Symposium on VLSI Technology Digest of Technical Papers, pp 115-116), and with very low sheet resistance (i.e., 1.6-3 Ω/□) when either a titanium nitride (TiN) or tungsten nitride (WNx) interlayer is provided between the tungsten layer and the polysilicon gate electrode layer (D. H. Lee et al., 1995 Symposium on VLSI Technology Digest of Technical Papers, pp 119-120; K. Kasai et al., IEDM 94, pp 497-500). However, a significant problem encountered with the use of tungsten as a gate electrode contact metal in memory array manufacture is oxidation thereof during high temperature (e.g., about 900° C.) furnace processing under an oxidizing ambient during MOS transistor and flash memory cell fabrication. - Thus, there exists a need for a process scheme, compatible with existing flash memory semiconductor manufacture, which allows formation of very low sheet resistance tungsten gate electrode contacts of deep submicron dimensions while reducing or eliminating oxidation thereof during subsequent processing.
- An advantage of the present invention is a method of manufacturing a high-density flash memory array with an improved control gate electrode contact structure.
- Another advantage of the present invention is a method of manufacturing a flash memory array including a control gate electrode structure which is resistant to oxidation during high temperature processing in an oxidizing ambient.
- Still another advantage of the present invention is a method of simultaneously forming oxidation resistant tungsten-based contacts to the gate electrode of a MOS transistor and the control gate electrode of a memory cell of a flash EEPROM.
- A still further advantage of the present invention is provision of a high density integration flash EEPROM semiconductor device having a tungsten-based gate electrode contact structure resistant to oxidation.
- Additional advantages and other features of the present invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from the practice of the present invention. The advantages of the present invention may be realized and obtained as particularly pointed out in the appended claims.
- According to the present invention, the foregoing and other advantages are achieved in part by a method of manufacturing a semiconductor device, which method comprises:
- providing a semiconductor substrate comprising silicon and having a surface;
- sequentially forming over the substrate a layer stack comprising:
- a gate oxide layer (a) on the substrate surface,
- an electrically conductive polysilicon layer (b) on the gate oxide layer,
- a barrier material layer (c) on the polysilicon layer,
- a tungsten layer (d) on the barrier material layer, and
- a silicon nitride layer (e) on the tungsten layer;
- selectively removing portions of layers (c)-(c) to define a pattern therein exposing sidewall surfaces of layers (c)-(e);
- selectively forming a silicon nitride layer (f) covering the exposed sidewall surfaces of layers (c)-(e), whereby the tungsten layer (d) is encapsulated by the combination of silicon nitride layers (e) and (f) formed on the uppermost and sidewall surfaces thereof, respectively;
- selectively removing portions of polysilicon layer (b) to define a pattern therein exposing sidewall surfaces thereof in substantial vertical registry with the sidewall surfaces of layers (c)-(e); and
- annealing the thus-formed layer stack at an elevated temperature in an oxidizing ambient, whereby the silicon nitride encapsulating layers (e) and (f) prevent oxidation of the tungsten layer (d) during the annealing.
- According to another aspect of the present invention, the semiconductor device comprises a transistor, the layer stack forming comprises forming same on at least a peripheral portion of the substrate surface, the electrically conductive polysilicon layer (b) comprises a gate electrode of the transistor, and the tungsten layer (d) comprises a gate electrode contact.
- According to still another aspect of the present invention, the method further comprises, after forming gate oxide layer (a) but prior to forming polysilicon layer (b), the steps of:
- forming an electrically conductive polysilicon layer (a′) on the gate oxide layer (a); and
- forming an interpoly dielectric layer (a″) on the polysilicon layer (a′);
- the method further comprising the step of selectively removing portions of polysilicon layer (a′) and interpoly dielectric layer (a″) to thereby expose sidewall surfaces thereof in substantial vertical registry with the exposed sidewall surfaces of layers (b)-(e);
- wherein the semiconductor device comprises a flash EEPROM, polysilicon layer (a′) comprises a floating gate electrode, polysilicon electrode (b) comprises a control gate electrode, and tungsten layer (d) comprises a low sheet resistance control gate electrode contact.
- In embodiments according to the present invention, polysilicon layer (b) corresponds to “
poly 2”, polysilicon layer (a′) corresponds to “poly 1”, the barrier material layer (c) comprises titanium nitride or tungsten nitride, the interpoly dielectric layer (a″) comprises a silicon oxide/silicon nitride/silicon oxide (“ONO”) composite, and the annealing comprises heating in a furnace in an oxygen containing ambient at a temperature of from about 800° C. to about 950° C. for from about 30 min. to about 60 min. - According to a still further aspect of the present invention a semiconductor device structure comprises:
- a semiconductor substrate comprising silicon and having a surface with at least one active device region formed therein or thereon;
- a layer stack formed on the substrate surface over the at least one active device region, the layer stack comprising, in sequence:
- a gate oxide layer (a) on the substrate,
- an electrically conductive polysilicon gate electrode layer (b) on the gate oxide layer,
- a titanium nitride or tungsten nitride barrier layer (c) on the polysilicon layer,
- a tungsten gate electrode contact layer (d) on the barrier layer, and
- a silicon nitride layer (e) on the tungsten layer, the layer stack patterned to expose sidewall surfaces of layers (b)-(e); and
- a silicon nitride layer (f) covering the exposed sidewall surfaces of layers (c)-(e), whereby the tungsten layer (d) is encapsulated by the combination of silicon nitride layers (e) and (f) formed on the uppermost and sidewall surfaces thereof, respectively, thereby preventing oxidation of tungsten layer (d) during annealing treatment of the device structure at an elevated temperature in an oxidizing ambient.
- According to an aspect of the present invention, the semiconductor device structure comprises a transistor and the at least one active device region is formed at least at a peripheral portion of the semiconductor substrate.
- According to a further aspect of the present invention, the layer stack of the semiconductor device structure further comprises an electrically conductive polysilicon layer (a′) (=“
poly 1”) on the gate oxide layer (a) and a silicon oxide/silicon nitride/silicon oxide composite interpoly dielectric layer (a″) on the polysilicon layer (a′) and under polysilicon layer (b) (=“poly 2”), polysilicon layer (a′) and composite interpoly dielectric layer (a″) patterned to expose sidewall surfaces thereof in substantial vertical registry with the sidewall surfaces of layers (b)-(e) of the layer stack, wherein the semiconductor device structure comprises a flash-type EEPROM, polysilicon layer (a′) comprises a floating gate electrode, polysilicon layer (b) comprises a control gate electrode, and tungsten layer (d) comprises a control gate electrode contact. - Additional advantages of the present invention will become readily apparent to those skilled in the art from the following detailed description, wherein only the preferred embodiment of the present invention is shown and described, simply by way of illustration of the best mode contemplated for carrying out the method of the present invention. As will be realized, the present invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, all without departing from the present invention. Accordingly, the drawing and description are to be regarded as illustrative in nature, and not as limitative
- FIGS.1(a)-1(h) and 2(a)-2(h) are simplified, cross-sectional schematic diagrams illustrating process steps for forming “
poly 2” peripheral transistor and stacked-gate memory cell portions, respectively, of a flash-type EEPROM device, in accordance with an embodiment of the present invention. - It should be recognized that the various layers forming the layer stack or laminate illustrated in the appended drawing figures as representing portions of EEPROM structures and devices fabricated according to the inventive methodology are not drawn to scale, but instead are drawn as to best illustrate the features of the present invention.
- Referring to FIGS.1(a) and 2(a), shown therein are layer stacks L1 and L2 formed on peripheral and central portions, respectively, of the silicon-based
semiconductor substrate 1. Layer stack L1 for forming the peripheral transistor comprises, in sequence, agate oxide layer 2 on the upper surface ofsubstrate 1, an electrically conductive polysilicon gate electrode layer 3 (“poly 2”) ongate oxide layer 2, a barrier material layer 4 of titanium nitride (TiN) or tungsten nitride (WNx) onpolysilicon layer 3, a tungsten gateelectrode contact layer 5 on barrier material layer 4, andsilicon nitride layer 6 ontungsten contact layer 5. Layer stack L2 for forming a memory cell comprises, in addition to the above described layers 2-6, a further electrically conductive polysilicon gate electrode layer 7 (“poly 1”) formed ongate oxide layer 2 and an interpoly dielectric layer 8, typically a silicon oxide/silicon nitride/silicon oxide (“ONO”) composite, formed on polysilicon layer 7 and below polysilicon layer 3 (“poly 2”). - Layers2-8 typically are formed utilizing well-known oxidative, reactive, physical vapor, and/or chemical vapor deposition techniques, the details of which are omitted from the description for brevity, except as noted. A preferred method for forming barrier material layer 4 comprises reactive sputtering of a titanium or tungsten target in a nitrogen (N2) containing atmosphere. The use of a tungsten target has an advantage in that the same target can be used, in sequence, for formation of the overlying
tungsten contact layer 5 by non-reactive sputtering.Tungsten contact layer 5 can also be formed by a chemical vapor deposition process (CVD) utilizing e.g., tungsten hexafluoride (WF6). Suitable ranges of thickness as well as preferred thicknesses for each of the layers of the layer stacks are indicated in Table 1 below.TABLE 1 Preferred Layer Material Thickness Range, Å Thickness, Å 2 Silicon oxide 25-150 70 3 Polysilicon 900-2500 1200 4 Titanium nitride or 50-300 100 tungsten nitride 5 Tungsten 700-4000 2000 6 Silicon nitride 150-1000 700 7 Polysilicon 250-1000 500 8 Silicon oxide/ 50-300 150 silicon nitride/ silicon oxide - After forming layer stacks L1 and L2, a bottom anti-reflection coating layer 9 (“BARC”) is formed atop the uppermost,
silicon nitride layer 6 of each layer stack, followed by formation thereon of a patternedphotoresist layer 10, in a known manner. Then layers 4-6, respectively formed of titanium nitride or tungsten nitride, tungsten, and silicon nitride, are etched along with BARC layer 9, as by reactive ion etching (RIE), using patternedphotoresist layer 10 as an etch mask and polysilicon layer 3 (poly 2) as an etch stop. After removal of thephotoresist layer 10 along with the underlying portion of BARC layer 9, the structures shown in FIGS. 1(b) and 2(b) are obtained. - Next a second silicon nitride film, at least about 1,000 Å thick, is deposited over the thus-patterned layer stacks so as to cover all exposed surfaces thereof and anisotropically etched, as by reactive ion etching, to remove a major portion of the thickness of the second silicon nitride film formed on the upper surface of the first
silicon nitride film 6, while leaving “spacer”portions 11 of the second silicon nitride covering the sidewall surfaces of the layer stacks, as shown in FIGS. 1(c) and 2(c).Spacer portions 11 are typically tapered in width from their lower endsproximate polysilicon layer 3 to essentially no width at their upper ends proximate silicon nitride “capping”layer 6. Suitable widths for the lower end portions of the taperedspacer portions 11 are from about 500 Å to about 2500 Å. - The combination of silicon nitride “capping”
layer 6 andsidewall spacer portions 11 serves to effectively encapsulate tungsten gateelectrode contact layer 5 and prevent deleterious oxidation thereof during subsequent high temperature treatments performed in an oxidizing ambient, e.g., furnace annealing in an oxygen containing atmosphere at a temperature of from about 800° C. to about 950° C. for from about 30 min. to about 60 min. As may be evident, the widths and densities (alternatively, porosities) of both silicon nitride layers are selected in accordance with the subsequent processing conditions to effectively preclude entry of oxidants (e.g., O2) thereinto for reaction withtungsten contact layer 5. In addition to the above consideration, the as-deposited thickness of the siliconnitride capping layer 6 should be sufficiently thick to withstand further etching during subsequent processing steps. - Next,
polysilicon layer 3 is etched away, as by reactive ion etching, using siliconnitride capping layer 6 as a self-aligned hard mask. The resulting structures are as shown in FIGS. 1(d) and 2(d). For the flash memory cell, since the silicon oxide and silicon nitride layers of composite interpoly dielectric layer 8 act as an etch stop, another dry (e.g., a reactive ion) etch is performed to remove the exposed portions of the ONO composite dielectric layer 8 and polysilicon layer 7 (poly 1), again using siliconnitride capping layer 6 as a self-aligned mask. Etch selectivity during this process is high against silicon nitride and therefore, the silicon nitride “capping”layer 6 retains sufficient thickness to prevent oxidation of thetungsten contact layer 5 during any subsequent high temperature annealing processing, as may be seen from FIG. 2(e). A further technological advantage attendant the inventive process wherein silicon nitride “capping”layer 6 remains over the tungsten contact layer throughout processing is the ability to perform a high selectivity etch to remove the field oxide in a later step. Again, the combination of silicon “capping”layer 6 and sidewallspacer layer portions 11 effectively prevents oxidation of thetungsten contact layer 5 during any high temperature processing associated therewith. - Referring now to FIGS.1(e) and 2(e), a series of light and medium dosage ion implantation steps are next performed to form active regions of differing dopant density and profile in the
semiconductor substrate 1, such as, but not limited to, source and drainregions electrode contact layer 5 is effectively prevented from oxidation during this step by virtue of the siliconnitride encapsulating layers - Following the dopant implantation steps for forming active regions, such as source and drain
regions oxide spacer layer 14 is formed to a thickness of from about 500 Å to about 2000 Å, preferably about 1000 Å, on the exposed surfaces of the layer stacks L1 and L2, as well as on the exposed surface of thesubstrate 1. In the case of the memory cell, theoxide layer 14 is selectively etched as shown in FIG. 2(f), using the siliconnitride capping layer 6 as an etch stop. - Referring now to FIGS.1(g) and 2(g), an additional layer of oxide is then deposited on the side surfaces of
oxide layer 14, resulting in the formation of thicker sidewall spacer layers 15, and oxide on the upper surface of the layer stack is removed by selective etching. In a further step, shown in FIGS. 1(h) and 2(h), source/drain N+ regions 16 and Vss connections are formed by ion implantation, in conventional manner. - Thus, by providing silicon nitride layers according to the present invention which effectively encapsulate the tungsten gate electrode contact and remain in place essentially throughout all processing steps involving high temperature treatment in oxidizing ambients, the problem of deleterious oxidation of the tungsten contacts is eliminated and sub-micron sized contacts having extremely low sheet resistance are, therefore, reliably obtained. Moreover, although in the illustrated embodiment, the inventive concept is applied to the manufacture of flash EEPROMS, the inventive method and structure of the present invention are applicable to all manner of semiconductor devices employing tungsten or tungsten-based contacts.
- In the previous descriptions, numerous specific details are set forth, such as particular materials, structures, reactants, processes, etc., in order to provide a thorough understanding of the present invention. However, it should be recognized that the present invention can be practiced without resorting to the details specifically set forth. In other instances, well-known processing structures and techniques have not been described in detail in order not to unnecessarily obscure the present invention.
- Only the preferred embodiments of the present invention are shown and described herein. It is to be understood that the present invention is capable of changes or modifications within the scope of the inventive concept as expressed herein.
Claims (20)
Priority Applications (1)
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US10/059,119 US20020137284A1 (en) | 1999-09-02 | 2002-01-31 | Tungsten gate MOS transistor and memory cell and method of making same |
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US15212699P | 1999-09-02 | 1999-09-02 | |
US09/649,027 US6346467B1 (en) | 1999-09-02 | 2000-08-28 | Method of making tungsten gate MOS transistor and memory cell by encapsulating |
US10/059,119 US20020137284A1 (en) | 1999-09-02 | 2002-01-31 | Tungsten gate MOS transistor and memory cell and method of making same |
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US10/059,119 Abandoned US20020137284A1 (en) | 1999-09-02 | 2002-01-31 | Tungsten gate MOS transistor and memory cell and method of making same |
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EP (1) | EP1247299B1 (en) |
JP (1) | JP2003531472A (en) |
KR (1) | KR100773994B1 (en) |
CN (1) | CN1192434C (en) |
AT (1) | ATE359601T1 (en) |
DE (1) | DE60034369T2 (en) |
WO (1) | WO2001017021A1 (en) |
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US20050186700A1 (en) * | 2004-02-23 | 2005-08-25 | Hagen Klauk | Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric |
US20050205942A1 (en) * | 2004-03-19 | 2005-09-22 | Shian-Jyh Lin | Metal gate with composite film stack |
US20050277252A1 (en) * | 2004-06-15 | 2005-12-15 | Young-Sub You | Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same |
US20070181975A1 (en) * | 2004-03-10 | 2007-08-09 | Koninklijke Philips Electronics N.V. | Trench-gate transistors and their manufacture |
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- 2000-08-31 CN CNB008133034A patent/CN1192434C/en not_active Expired - Fee Related
- 2000-08-31 DE DE60034369T patent/DE60034369T2/en not_active Expired - Lifetime
- 2000-08-31 KR KR1020027002807A patent/KR100773994B1/en not_active IP Right Cessation
- 2000-08-31 AT AT00959866T patent/ATE359601T1/en not_active IP Right Cessation
- 2000-08-31 EP EP00959866A patent/EP1247299B1/en not_active Expired - Lifetime
- 2000-08-31 WO PCT/US2000/024271 patent/WO2001017021A1/en active IP Right Grant
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US7030431B2 (en) * | 2004-03-19 | 2006-04-18 | Nanya Technology Corp. | Metal gate with composite film stack |
US20050205942A1 (en) * | 2004-03-19 | 2005-09-22 | Shian-Jyh Lin | Metal gate with composite film stack |
US7160776B2 (en) * | 2004-06-15 | 2007-01-09 | Samsung Electronics Co. Ltd. | Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same |
US20050277252A1 (en) * | 2004-06-15 | 2005-12-15 | Young-Sub You | Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same |
US20090096010A1 (en) * | 2007-10-10 | 2009-04-16 | Hynix Semiconductor | Nonvolatile memory device and fabrication method thereof |
WO2017091572A1 (en) * | 2015-11-23 | 2017-06-01 | Entegris, Inc. | Composition and process for selectively etching p-doped polysilicon relative to silicon nitride |
US10991809B2 (en) | 2015-11-23 | 2021-04-27 | Entegris, Inc. | Composition and process for selectively etching p-doped polysilicon relative to silicon nitride |
Also Published As
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EP1247299B1 (en) | 2007-04-11 |
WO2001017021A1 (en) | 2001-03-08 |
ATE359601T1 (en) | 2007-05-15 |
KR100773994B1 (en) | 2007-11-08 |
DE60034369T2 (en) | 2008-01-10 |
KR20020029772A (en) | 2002-04-19 |
CN1376309A (en) | 2002-10-23 |
JP2003531472A (en) | 2003-10-21 |
DE60034369D1 (en) | 2007-05-24 |
EP1247299A1 (en) | 2002-10-09 |
CN1192434C (en) | 2005-03-09 |
US6346467B1 (en) | 2002-02-12 |
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