US20020085156A1 - Liquid crystal panel for IPS mode liquid crystal display device and method for fabricating the same - Google Patents
Liquid crystal panel for IPS mode liquid crystal display device and method for fabricating the same Download PDFInfo
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- US20020085156A1 US20020085156A1 US10/014,518 US1451801A US2002085156A1 US 20020085156 A1 US20020085156 A1 US 20020085156A1 US 1451801 A US1451801 A US 1451801A US 2002085156 A1 US2002085156 A1 US 2002085156A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
Abstract
Description
- This application claims the benefit of Korean Patent Application No. 2000-76879, filed on Dec. 15, 2000 in Korea, which is hereby incorporated by reference as if fully set forth herein.
- 1. Field of the Invention
- The present invention relates to a liquid crystal display (LCD) device, and more particularly to a liquid crystal panel for a liquid crystal display device implementing In-Plane Switching (IPS) wherein electric field applied to liquid crystal is generated in a plane parallel to a substrate.
- 2. Discussion of the Related Art
- A typical liquid crystal display (LCD) device uses optical anisotropy and polarization properties of liquid crystal molecules. The liquid crystal molecules have a definite orientation order in alignment resulting from their thin and long shapes. The alignment direction of the liquid crystal molecules can be controlled by supplying an electric field to the liquid crystal molecules. In other words, as the alignment direction of the electric field is changed, the alignment of the liquid crystal molecules also changes. Because incident light is refracted to the orientation of the liquid crystal molecules due to the optical anisotropy of the aligned liquid crystal molecules, image data is displayed.
- By now, active matrix LCDs, in which the thin film transistors and the pixel electrodes are arranged in the form of a matrix, are widely used because of their high resolution and superiority in displaying moving images.
- FIG. 1 is an exploded perspective view illustrating a typical liquid crystal display device. As shown in the figure, the typical liquid crystal display device includes an
upper substrate 5 and alower substrate 22 and aliquid crystal layer 14 interposed between the upper and lower substrate. Acolor filter 7 includingblack matrices 6 andsub-filters 8 are formed on theupper substrate 5, and a transparentcommon electrode 18 is formed on thecolor filter 7. On the other hand, a pixel region “P”, apixel electrode 17 in the pixel region “P” and an array line including switching element, i.e., thin film transistor, are formed on thelower substrate 22. Thelower substrate 22 is referred to as anarray substrate 22 and a plurality of thin film transistors “T”, i.e., switching element, is formed at every crossing ofhorizontal gate lines 13 andvertical data lines 15 in a form of an array matrix. The pixel region “P” is defined by agate line 13 and adata line 15 crossing each other. A transparent conductive material such as indium tin oxide (ITO) is used for thepixel electrode 17 formed in the pixel region “P”. Theliquid crystal layer 14 comes to be aligned according to a signal applied thereto by the thin film transistor “T”. An image may be displayed by controlling an amount of light transmitting theliquid crystal layer 14 according to the alignment of the liquid crystal layer. - The above-mentioned liquid crystal display device, in which the liquid crystal is aligned by an electric field applied vertically, has advantages of high transmittance and high aperture ratio. Furthermore, since the common electrode on the upper substrate serves as an electrical ground, the liquid crystal is protected from a static electricity. However, the above-mentioned liquid crystal display device applying the electric field vertically to the liquid crystal has a disadvantage of a narrow viewing angle. To overcome the narrow viewing angle, an in-plane switching (IPS) LCD panel was developed. The IPS LCD panel implements an electric field that is parallel to the substrates, which is different from the Twisted Nematic (TN) or Super Twisted Nematic (STN) LCD panel. A detailed explanation about operation modes of a typical IPS LCD panel will be provided with reference to FIGS. 2, 3A,3B, and 4.
- As shown in FIG. 2, the upper and
lower substrates lower substrates common electrodes lower substrate 22. The pixel andcommon electrodes liquid crystal 14 is aligned by a lateral electric field between the pixel andcommon electrodes - FIGS. 3A to3B are views illustrating operations of the liquid crystal for IPS mode at on and off state of a voltage applied. FIG. 3A conceptually illustrates “off state” operation modes for a typical IPS LCD device. In the off state, the long axes of the liquid crystal molecules maintain a definite angle with respect to a line that is perpendicular to the pixel and
common electrodes common electrode - FIG. 3B conceptually illustrates “on state” operation modes for the typical IPS LCD device. In the on state, an in-plane electric field, which is parallel with the surface of the
lower substrate 22, is generated between the pixel andcommon electrodes pixel electrode 17 andcommon electrode 18 are formed together on thelower substrate 22. The liquid crystal molecules are twisted such that the long axes thereof coincide with the electric field direction. Thereby, the liquid crystal molecules are aligned such that the long axes thereof are perpendicular to the pixel andcommon electrodes - The IPS LCD device uses the lateral
electric field 35 because the pixel and common electrodes are formed on the same substrate. The IPS LCD device has a wide viewing angle and low color dispersion. Specifically, the viewing angle of the IPS LCD device is about 70 degrees in direction of up, down, right, and left. In addition, the fabricating processes of this IPS LCD device are simpler than other various LCD devices. However, because the pixel andcommon electrodes - Now, with reference to FIGS.4, and 5A to 5D, a fabricating process for a conventional IPS LCD device is provided. FIG. 4 is a plan view illustrating a unit pixel region “P” of a conventional IPS LCD device. As shown, a
gate line 50 and acommon line 54 are arranged parallel to each other, and adata line 60 is arranged perpendicular to the gate andcommon lines data lines gate electrode 52 and asource electrode 62 are disposed. The gate andsource electrodes gate line 50 and thedata line 60, respectively. Thesource electrode 62 overlaps a portion of thegate electrode 52. In addition, adrain electrode 64 is disposed opposite to thesource electrode 62 with an interval between the source and drain electrodes. - A plurality of
common electrodes 54 a are disposed perpendicular to thecommon line 54 and connected to thecommon line 54. The plurality ofcommon electrodes 54 a are spaced apart from each other with an equal interval between. A first connectingline 66 integrally communicates with thedrain electrode 64. A plurality ofpixel electrodes 66 a are disposed perpendicular to the first connectingline 66. First ends of thepixel electrodes 66 a are connected with the first connectingline 66, and the second ends of thepixel electrodes 66 a are connected with a second connectingline 68 that is disposed over thecommon line 54. The plurality ofcommon electrodes 54 a and thepixel electrodes 66 a are spaced apart from each other and arranged in an alternating pattern. Therefore, eachcommon electrode 54 a is parallel to anadjacent pixel electrode 66 a. - FIGS. 5A to5D are cross-sectional views taken along “V-V” of FIG. 4 illustrating a sequence of fabricating processes for an
array substrate 22 of the above-mentioned IPS LCD device. - In FIG. 5A, a first metal layer is deposited on the
array substrate 22 and patterned to form thegate electrode 52 and the plurality ofcommon electrodes 54 a. The first metal layer may be selected from a group consisting of chromium (Cr), aluminum (Al), aluminum alloy (Al alloy), for example. - In FIG. 5B, a
gate insulating layer 70 is formed on thearray substrate 22 to cover the gate andcommon electrodes active layer 72 is formed on thegate insulating layer 70 over thegate electrode 52. Silicon nitride (SiNx), for example, may be used for thegate insulating layer 70, while theactive layer 72 includes an amorphous silicon layer (not shown) and a doped amorphous silicon layer (not shown). - In FIG. 5C, a second metal layer is deposited and patterned to form the source and drain
electrodes active layer 72 and thepixel electrodes 66 a on thegate insulating layer 70. Thepixel electrodes 66 a are spaced apart from the adjacentcommon electrode 54 a by a distance “L”. - In FIG. 5D, a
passivation layer 74 is formed to cover the source, drain, andpixel electrodes passivation layer 74 serves to protect the source, drain, andpixel electrodes - As described above, the common and
pixel electrodes substrate 22. Though the IPS LCD device has an advantage of a wide viewing angle, the aperture ratio and luminance of the IPS LCD panel are much lower than that of the twisted nematic (TN) or super twisted nematic (STN) LCD device. - Accordingly, the present invention is directed to an in-plane switching (IPS) mode liquid crystal display device and a method for fabricating the same that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
- An advantage of the present invention is to provide an in-plane switching liquid crystal display device that improves an aperture ratio and brightness as well as a viewing angle.
- Another advantage of the present invention is to provide a fabricating method for an in-plane switching liquid crystal display device that improves the aperture ratio and the brightness.
- Another advantage of the present invention is to provide an in-plane switching liquid crystal display device that further improves the aperture ratio and the brightness.
- Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, an in-plane switching liquid crystal display device comprises first and second substrates, a gate line and a data line defining a pixel region on the first substrate, a common line on the first substrate, a thin film transistor at a crossing portion between the gate line and the data line, a first pixel electrode and a plurality of second pixel electrodes on the first substrate, a first common electrode and a plurality of second common electrodes on the first substrate, a black matrix layer on the second substrate, the black matrix layer having a substantially rectangular shape and being formed between the first pixel electrode and one end of the second common electrode and a liquid crystal layer between the first substrate and the second substrate. The common line is partially overlapped with the data line. The thin film transistor includes gate, source, and drain electrodes. The pixel and common electrodes include a transparent conductive material. The transparent conductive material is one of indium tin oxide (ITO) and indium zinc oxide (IZO). The common line and the data line have a zigzag shape. The pixel and common electrodes have a substantially zigzag shape. The black matrix layer is formed between one end of the second pixel electrode and the first common electrode. The in-plane switching liquid crystal display device further includes a storage capacitor on the gate line. The in-plane switching liquid crystal display device further includes a passivation layer on the thin film transistor. The common and pixel electrodes are formed on the passivation layer.
- In another aspect, a method for fabricating an in-plane switching liquid crystal display device includes the steps of forming a gate line and a data line defining a pixel region on a first substrate, forming a common line on the first substrate, forming a thin film transistor at a crossing portion between the gate line and the data line, forming a first pixel electrode and a plurality of second pixel electrodes on the first substrate, forming a first common electrode and a plurality of second common electrodes on the first substrate, forming a black matrix layer on the second substrate, the black matrix layer having a substantially rectangular shape and being formed between the first pixel electrode and one end of the second common electrode and forming a liquid crystal layer between the first and second substrates. The pixel and common electrodes include a transparent conductive material. The transparent conductive material is one of indium tin oxide (ITO) and indium zinc oxide (IZO). The common line and the data line have a substantially zigzag shape. The pixel and common electrodes have a substantially zigzag shape. The black matrix layer is formed between one end of the second pixel electrode and the first common electrode. The method for fabricating an in-plane switching liquid crystal display device further includes the step of forming a storage capacitor on the gate line. The method for fabricating an in-plane switching liquid crystal display device further includes the step of forming a passivation layer on the thin film transistor. The common and pixel electrodes are formed on the passivation layer.
- In another aspect, an in-plane switching liquid crystal display device includes first and second substrates, a gate line and a data line defining a pixel region on the first substrate, a common line on the first substrate, a thin film transistor at a crossing portion between the gate line and the data line, a first pixel electrode and a plurality of second pixel electrodes on the first substrate, a first common electrode and a plurality of second common electrodes on the first substrate, a black matrix layer on the first substrate, the black matrix layer being formed between the first pixel electrode and one end of the second common electrode and a liquid crystal layer between the first substrate and the second substrate. The common line is partially overlapped with the data line. The thin film transistor includes gate, source, and drain electrodes. The pixel and common electrodes include a transparent conductive material. The transparent conductive material is one of indium tin oxide (ITO) and indium zinc oxide (IZO). The common line and the data line have a substantially zigzag shape. The pixel and common electrodes have a substantially zigzag shape. The black matrix layer is formed between one end of the second pixel electrode and the first common electrode. The black matrix layer is formed on the same plane of the gate line. The black matrix layer is formed on the same plane of the data line. The in-plane switching liquid crystal display device further comprises a passivation layer on the thin film transistor. The common and pixel electrodes are formed on the passivation layer.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
- In the drawings:
- FIG. 1 is an exploded perspective view illustrating a conventional liquid crystal panel for a color liquid crystal display device;
- FIG. 2 is a cross-sectional view illustrating a conventional in-plane switching (IPS) mode liquid crystal display device;
- FIG. 3A is a view illustrating an operation of liquid crystal of the conventional in-plane switching (IPS) mode liquid crystal display device in an off state;
- FIG. 3B is a view illustrating an operation of liquid crystal of the conventional in-plane switching (IPS) mode liquid crystal display device in an on state;
- FIG. 4 is a plan view illustrating a pixel of an array substrate for the conventional in-plane switching (IPS) mode liquid crystal display device;
- FIGS. 5A to5D are cross-sectional views taken along V-V of FIG. 4 illustrating a fabricating sequence of an array substrate for the conventional in-plane switching (IPS) mode liquid crystal display device;
- FIG. 6 is a plan view illustrating a part of an array substrate according to a first embodiment of the present invention;
- FIG. 7 is an enlarged plan view illustrating a region between a first pixel electrode and a second common electrode where a disclination may be generated;
- FIGS. 8A to8C are cross-sectional views taken along I-I, II-II, III-III of FIG. 6 illustrating a fabricating sequence of an array substrate according to the present invention;
- FIG. 9 is a view illustrating a liquid crystal panel according to the first embodiment of the present invention; and
- FIG. 10 is a plan view illustrating a part of an array substrate according to another embodiment of the present invention.
- Reference will now be made in detail to the illustrated embodiments of the present invention, which is illustrated in the accompanying drawings.
- FIG. 6 is a plan view illustrating a part of an array substrate according to a first embodiment of the present invention. As shown in the context of the figure, horizontally extended
gate lines 113 and vertically extendeddata lines 115 define a pixel region “P” by crossing each other. Thedata line 115 is formed in a substantially zigzag pattern. The thin film transistor including agate electrode 121, anactive layer 124, source and drainelectrodes gate line 113, and thedata line 115. A storage capacitor is formed over a part of thegate line 113. Thepixel electrode 131 includes afirst pixel electrode 131 a contacting thedrain electrode 125 and a plurality ofsecond pixel electrodes 131 b extending from thefirst pixel electrode 131 a. The plurality ofsecond pixel electrodes 131 b is formed in a substantially zigzag pattern roughly in parallel with thedata line 115. Thefirst pixel electrode 131 a is spaced apart from thegate line 113 and parallel to thegate line 113. One of thesecond pixel electrodes 131 b contacts asecond storage electrode 127 and thus constitutes the storage capacitor “C” on thegate line 113. Thecommon electrode 133 and thecommon line 135 extended to the common electrode are formed parallel to thepixel electrode 131. Thecommon electrode 133 includes a firstcommon electrode 133 a and a plurality of secondcommon electrodes 133 b. The firstcommon electrode 133 a is stemmed from thecommon line 135 and parallel to thegate line 113. The plurality of secondcommon electrodes 133 b extends roughly perpendicularly from the firstcommon electrode 133 a and is arranged in an alternating order with thesecond pixel electrodes 131 b roughly in parallel with thedata line 115. Thecommon line 135, thecommon electrode 133 and thepixel electrode 131 are formed on a same plane using transparent conductive materials. Thus it is possible to increase an aperture ratio. Electric field directions distributed by thecommon electrode 133 and thepixel electrode 131 in regions adjacent to the firstcommon electrode 133 a and thefirst pixel electrode 131 a respectively show different electric field distributions from those of other regions in a pixel, and thus disclinations caused by abnormal alignments of liquid crystal may be generated in these regions. - FIG. 7 is an enlarged plan view of “K” of FIG. 6 illustrating a region between a
first pixel electrode 131 a and a secondcommon electrode 133 b where a disclination may be generated. Thecommon electrode 133 and thepixel electrode 131 are made of same materials as shown in the figure of the secondcommon electrodes 133 b and thesecond pixel electrodes 131 b spaced apart from each other. In addition, a short should not occur between thepixel electrodes 131 and thecommon electrodes 133. Accordingly, there must be a space between thefirst pixel electrode 131 a and the end of the secondcommon electrode 133 b and between the firstcommon electrode 133 a and the end of thesecond pixel electrode 131 b considering the short circuit margin. Therefore, the direction of the electric field in the regions between the first common electrode (not shown) and the end of second pixel electrode (not shown) and between thefirst pixel electrode 131 a and the end of the secondcommon electrode 133 b is different from the direction of the electric field distributed in the middle part of the pixel. The direction of theelectric field first pixel electrode 131 a and the end of the secondcommon electrode 133 b are symmetric as shown in the figure. Because the liquid crystal molecules have a tendency to rotate in a direction of small angle between an axis of symmetry of the liquid crystal molecules and the electric field, all of the liquid crystal molecules in the middle part of the pixel are inclined to align in a same direction. But theliquid crystal molecules second pixel electrode 131 b and the secondcommon electrode 133 b have a tendency to align in mutually opposite directions, as shown in the figure using arrows. Accordingly, one of theliquid crystal molecules black matrix 145 may be formed on the upper substrate so that the black matrix can intercept light incident in the region where the disclination is generated. Theblack matrix 145 has substantially rectangular shapedprotrusion 145 a, as shown in FIG. 6, and the portion “M” of the black matrix in FIG. 6 intercept the incident light in the region where the disclination is generated. Theprotrusion 145 a of theblack matrix 145 is substantially rectangular shaped, and may be slanted to cover the area of disclination to prevent light from passing through areas of disclination. For example, theprotrusion 145 a may have the shape of a parallelogram that is slanted with respect to theblack matrix 145. - One of characteristics of the present invention is that the
common electrode 133 and thepixel electrode 131 are formed using transparent conductive materials. Accordingly, because an area that can transmit the incident light can be enlarged, a higher aperture ratio and a higher brightness can be obtained. Because thepixel electrode 131 and thecommon electrode 133 can be formed parallel in a same plane with the same material, the fabricating process can be simplified and a residual direct current (R-DC), which causes a residual image, can be removed. In addition, because thecommon electrode 133 and thepixel electrode 131 can be spaced with an uniform distance and thus an uniform lateral electric field distribution can be obtained in the whole pixel area, flicker caused by an irregular electric field distribution can be prevented. - Another characteristic of the present invention is that the
common electrode 133 and thepixel electrode 131 are formed in substantially zigzag patterns. Accordingly, the liquid crystal molecules in a pixel are not aligned in a same direction, but in a symmetric directions and thereby multi-domain can be obtained. A color shift phenomenon can be minimized by offsetting abnormal light caused by birefringence properties of the liquid crystal using the symmetric multi-domain structure. - Another characteristic of the present invention is that the storage capacitor “C” connected in parallel to the
pixel electrode 131 is not formed on thecommon line 135 but on thegate line 113. Accordingly, because a line width of thecommon line 135 can be reduced, the aperture ratio of the liquid crystal panel can be further improved. - Another characteristic of the present invention is that the black matrix is not formed widely over the gate line and the common line, but the area of the black matrix is minimized by placing the black matrix only over the gate line and the first
common electrode 133 a and extending the black matrix over the regions where the liquid crystal is aligned abnormally. - A fabricating sequence of the array substrate for a in-plane switching (IPS) mode liquid crystal display device will be described hereafter with reference to FIGS. 8A to8C. FIGS. 8A to 8C are cross-sectional views taken along I-I, II-II, III-III of FIG. 6 illustrating a fabricating sequence of an array substrate according to the present invention. As shown in the figure, a
gate line 113 is formed on thearray substrate 111. A part of thegate line 113 is used as thegate electrode 121 in a first embodiment of the present invention. Agate insulating layer 122 is then formed by coating or depositing an organic insulating material or an inorganic insulating material on thegate line 113. The inorganic insulating material is selected from a group consisting of silicon oxide (SiO2) and silicon nitride (SiNx), for example and the organic insulating material is selected from a group consisting of benzocyclobutene (BCB) and acryl-based resin, for example. Anactive layer 124 is then formed on thegate insulating layer 122 using an amorphous silicon (a-Si:H) and anohmic contact layer 128 is subsequently formed on the active layer using a doped amorphous silicon (n+a-Si:H or p+a-Si:H). Theohmic contact layer 128 may be alternatively formed by doping n+ ions or p+ ions on theactive layer 124. - As shown in FIG. 8B, a
data line 115 and a source and drainelectrodes ohmic contact layer 128 are formed by depositing a conductive material selected from a group consisting of aluminum (Al), aluminum alloy (AlNd), tungsten (W), molybdenum (Mo), for example, on the array substrate and patterning it thereafter. Thesource electrode 123 is formed by extending thedata line 115 from a crossing of thegate line 113 and thedata line 115. Thedata line 115 is formed in substantially zigzag pattern. Ametal layer 127 of the same material as the source and drainelectrodes gate line 113. Thiselectrode 127 serves as a second electrode of the storage capacitor “C”. A part of theohmic contact layer 128 between the source anddrain electrode passivation layer 137 is formed by coating or depositing an organic insulating material or an inorganic insulating material on the substrate. The inorganic insulating material is selected from a group consisting of silicon oxide (SiO2) and silicon nitride (SiNx), for example and the organic insulating material is selected from a group consisting of benzocyclobutene (BCB) and acryl-based resin, for example. Adrain contact hole 143 and astorage contact hole 145 exposing thedrain electrode 125 and thesecond storage electrode 127 respectively are formed by etching parts of thepassivation layer 137 on thedrain electrode 125 and thesecond storage electrode 127 respectively. - As shown in FIG. 8C, a
pixel electrode 131, acommon line 135 and acommon electrode 133 are formed by depositing a transparent conductive material selected from a group consisting of indium tin oxide (ITO) and indium zinc oxide (IZO), for example on thepassivation layer 137 and patterning it thereafter. One end of thepixel electrode 131 contacts thedrain electrode 125, and the other end of the pixel electrode contacts thesecond storage electrode 127. Thepixel electrode 131 includes afirst pixel electrode 131 a contacting thedrain electrode 125 spaced apart from and substantially parallel to thegate line 113 and a plurality ofsecond pixel electrodes 131 b extending away from thefirst pixel electrode 131 a in a substantially zigzag pattern. Thecommon electrode 133 includes a firstcommon electrode 133 a and a plurality of secondcommon electrodes 133 b. The firstcommon electrode 133 a extends from thecommon line 135 and parallel to thegate line 113. The plurality of secondcommon electrodes 133 b extends away from the firstcommon electrode 133 a and are arranged in an alternating order with thesecond pixel electrodes 131 b. Thecommon line 135 and one of the secondcommon electrodes 133 b partially overlap a part of thedata line 115. Thedata line 115 serves to prevent light from irradiating to the region where the liquid crystal is aligned abnormally. - As shown in FIG. 9, a
black matrix 145 is formed on theupper substrate 151 corresponding to the regions between the firstcommon electrode 133 a and the end of thesecond pixel electrode 131 b and between thefirst pixel electrode 131 a and the end of the secondcommon electrode 133 b where the liquid crystal is aligned abnormally. The black matrix is also formed over the thin film transistor and the storage capacitor “C”, as shown in the figure. That is, a plurality of projections extend from the upper and lower part of the rectangularblack matrix 145 covering thegate line 113 and the firstcommon electrode 133 a. Thus, the black matrix has a substantially rectangular shape. The protrusions are substantially rectangular-shaped. An aperture ratio can be increased by forming the black matrix in this way as compared with the method where the black matrix is widely formed to cover the gate line, the common line and the region where the liquid crystal is aligned abnormally. Because the black matrix still needs to be formed over the gate line according to the first embodiment of the present invention, an alignment margin of the upper and lower substrate should be considered. - The second embodiment of the present invention that has an improved black matrix will be described hereinafter with reference to FIG. 10. FIG. 10 is a plan view illustrating a part of an array substrate according to another embodiment of the present invention. As shown in the figure, the
black matrix 145 does not to cover the whole area of thegate line 113 and the firstcommon electrode 133 a, but covers only regions between thefirst pixel electrode 131 a and one end of the secondcommon electrode 133 b and between the firstcommon electrode 133 a and one end of thesecond pixel electrode 131 b where liquid crystal is aligned abnormally. Because theblack matrix 145 is not formed over thegate line 113 and the firstcommon electrode 133 a, theblack matrix 145 may be formed by using the same material as that of thegate line 113 or thedata line 115 and by patterning it simultaneously with the gate line or the data line during the forming process of thegate line 113 or thedata line 115. Theblack matrix 145 may be formed by extending thegate line 113 or thedata line 115. Alternatively, theblack matrix 145 may be formed independent of thegate line 113 and thedata line 115. Because the black matrix does not need to be formed on the upper substrate according to this embodiment, the alignment margin does not need to be considered. Furthermore, an improved aperture ratio can be obtained. Accordingly, the present invention improves the brightness that was a weak point of in-plane switching (IPS) mode liquid crystal display device. - It will be apparent to those skilled in the art that various modifications and variation can be made in the fabrication and application of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (38)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR2000-76879 | 2000-12-15 | ||
KR1020000076879A KR100730495B1 (en) | 2000-12-15 | 2000-12-15 | IPS mode Liquid crystal display device and method for fabricating the same |
KR2000-0076879 | 2000-12-15 |
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US20020085156A1 true US20020085156A1 (en) | 2002-07-04 |
US6459465B1 US6459465B1 (en) | 2002-10-01 |
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US10/014,518 Expired - Lifetime US6459465B1 (en) | 2000-12-15 | 2001-12-14 | Liquid crystal panel for IPS mode liquid crystal display device and method for fabricating the same |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20040189916A1 (en) * | 2003-03-24 | 2004-09-30 | Samsung Electronics Co., Ltd. | Liquid crystal display and thin film transistor array panel therefor |
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US6459465B1 (en) | 2002-10-01 |
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