US20020076913A1 - Semiconductor device resistant to soft errors and a method for manufacturing the semiconductor device - Google Patents
Semiconductor device resistant to soft errors and a method for manufacturing the semiconductor device Download PDFInfo
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- US20020076913A1 US20020076913A1 US09/416,403 US41640399A US2002076913A1 US 20020076913 A1 US20020076913 A1 US 20020076913A1 US 41640399 A US41640399 A US 41640399A US 2002076913 A1 US2002076913 A1 US 2002076913A1
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Definitions
- the present invention relates to semiconductor devices and methods for fabricating semiconductor devices, and more particularly, to packaging and fabrication methods that reduce soft errors in semiconductor devices including memory cells.
- Packaging protects semiconductor chips from the external environment.
- a molding compound encapsulates and protects a semiconductor chip from moisture and contaminants.
- the molding compound may contain radio active elements that can cause soft errors in the semiconductor chip.
- Soft errors correspond to the phenomenon where an alpha particle or other radiation enters a memory cell and changes the state of a data bit in the memory cell. Soft errors thus degrade the reliability of data stored in the semiconductor chip.
- Molding compounds usually contain elements that can emit alpha particles which can cause a soft error in a semiconductor chip. Accordingly, efforts have been made to reduce the content of alpha particle emitting elements in molding compounds.
- soft errors continue to be a concern for the semiconductor manufacturing industry as the integration level of semiconductor devices increases because the smaller feature sizes of devices in integrated circuits make alpha particles more effective at causing soft errors.
- a chip coating is a polyimide layer, which is approximately 10 ⁇ m or more thick, on a passivation layer of a semiconductor chip.
- the polyimide layer or coating reduces the energy of the alpha particles from the molding compound and other sources.
- a chip scale package does not include the molding compound which is used for plastic packages.
- a CSP has solder bumps formed on the chip as external terminals of the CSP.
- the solder bumps typically include polonium (Po) as an impurity, and polonium emits alpha particles that can cause soft errors.
- the flux of the alpha particles from solder is greater than the alpha particle flux from the typical molding compound. Accordingly, conventional chip coatings cannot effectively prevent soft errors in CSPs and other similar semiconductor device packages.
- an embodiment of the present invention provides a method for fabricating a semiconductor device that is capable of reducing soft errors.
- the method coats a chip with a material such as benzo cyclo butene (BCB) which has superior ability to block or slow alpha particles and has a low water intake rate when compared to a conventional polyimide layer.
- BCB benzo cyclo butene
- a method for fabricating a semiconductor device includes forming a top metal layer on a semiconductor substrate on which an integrated circuit including a memory cell is formed.
- the top metal layer includes a bondpad.
- a passivation layer is on the top metal layer and patterned to expose the bondpad.
- a metal pattern is formed on the passivation layer and connected to the bondpad for bondpad redistribution, and an insulating layer including a benzo cyclo butene (BCB) layer is formed on the metal pattern.
- BCB benzo cyclo butene
- the insulating layer can be a single BCB layer or can be composed of a BCB layer and a polyimide layer. In the latter case, either one of the BCB layer and the polyimide layer can be formed on the other.
- the effective thickness of the BCB layer for alpha particle suppression is 10 to 100 ⁇ m.
- the passivation layer commonly includes a layer selected from a group consisting of a silicon nitride (SiN) layer, a titanium nitride (TiN) layer, a plasma enhanced oxide (PEOX) layer and a phosphor-silicate glass (PSG) layer.
- the BCB layer can be between the metal pattern and the bondpad or incorporated between an upper passivation layer and a lower passivation layer.
- the BCB layer hardly emits alpha particles and effectively blocks or slows alpha particles emitted from solder bumps that may be attached to the redistributed bonding pads, and thus the BCB layer reduces soft errors in the semiconductor chip. Additionally, since the BCB layer has a low moisture absorption ratio, moisture-related package problems also can be reduced.
- FIGS. 1 through 4 are partial sectional views of semiconductor structures illustrating a method for fabricating a semiconductor device according to an embodiment of the present invention
- FIG. 5 is a partial sectional view of a semiconductor device according to another embodiment of the present invention.
- FIG. 6 is a partial sectional view of a semiconductor device according to yet another embodiment of the present invention.
- FIG. 7 is a partial sectional view of a semiconductor device according to still another embodiment of the present invention.
- FIG. 8 is a partial sectional view of a semiconductor device according to another embodiment of the present invention.
- FIG. 9 is a partial sectional view of a semiconductor device according to another embodiment of the present invention.
- FIGS. 1 through 4 show sectional views of structures formed during fabrication of a semiconductor device in accordance with an embodiment of the invention.
- the semiconductor device is resistant to soft errors that alpha particles otherwise cause. Referring to FIGS. 1 to 4, a method for manufacturing the semiconductor device is explained.
- FIG. 1 shows a semiconductor structure including bonding pads 102 formed on a semiconductor substrate 100 .
- Semiconductor substrate 100 includes active regions (not shown) and layers (not shown) that form an integrated circuit connected to bonding pad 101 .
- the integrated circuit typically includes a memory cell or other circuitry that is susceptible to soft errors.
- the processes for forming the integrated circuit up to forming bonding pads 102 are conventional and are not described in detail here.
- Bonding pads 102 are typically aluminum and are portions of a metal pattern (not shown) layer formed on underlying integrated circuit layers (not shown).
- An overlying passivation layer 108 has openings that expose bonding pads 102 for subsequent electrical connections.
- Passivation layer 108 which protects the integrated circuit layers from moisture and external impact, can be formed of a single or complex layer of a material such as silicon nitride (SiN), titanium nitride (TiN), plasma enhanced oxide (PEOX), or phosphor-silicate glass (PSG).
- passivation layer 108 includes an upper passivation layer 106 , which is an SiN layer or a PSG layer, and a lower passivation layer 104 , which is a PEOX layer or a PSG layer.
- Known deposition and photolithography techniques can form passivation layer 108 with openings such that bonding pads 102 are exposed through passivation layer 108 .
- known metal deposition and photolithography techniques form a metal pattern 110 , i.e. a copper layer, on passivation layer 108 to redistribute bonding pads 102 .
- the redistribution connects bonding pads 102 to external terminal pads 118 having a standardized external terminal format for the semiconductor device.
- a benzo cyclo butene (BCB) layer 112 is formed to a thickness of 10 ⁇ m to 100 ⁇ m on metal pattern 110 and passivation layer 108 . Openings in BCB layer 112 expose portions of metal layer pattern 110 that correspond to external terminal pads 118 .
- BCB benzo cyclo butene
- benzo cyclo butene (BCB) layer 112 liquid benzo cyclo butene (BCB) is spin-coated on the entire surface of substrate 100 and cured at 270° C. for several minutes. Then known photolithography and etching processes expose external terminal pads 118 , also referred to as ball pads 118 .
- the glass transition temperature (Tg) of the BCB is approximately 60° C. higher than 290° C., which is the glass transition temperature (Tg) of polyimide.
- Tg glass transition temperature
- Photoresist is deposited on the BCB layer 112 , and photolithography and etching pattern the photoresist and BCB layer 112 to expose external terminal pad 118 to which an external connector or terminal such as a solder ball is to be connected.
- a reflow method attaches solder balls to external terminal pads 118 to form external terminals 114 for a chip scale package (CSP) suitable for mounting on a printed circuit board (PCB).
- CSP chip scale package
- PCB printed circuit board
- a material emitting a small flux of alpha particles may reside on the chip coating layer.
- advanced semiconductor packages such as CSPs or BGAs use solder balls or other package material that emits a relatively large flux of alpha particles when compared to the conventional molding compound.
- BCB layer 112 is critical to reducing the probability that the alpha particles will affect a memory cell in the underlying integrated circuit.
- solder balls emit more alpha particles than does the molding compound used in plastic packages.
- Table 1 shows the flux of alpha particles emitted from a solder ball, an electroplated solder, a BCB layer and two molding compounds as measured by a low level proportional counter (EG&G Berthold 770 type).
- the unit CPH/cm 2 indicates count per hour/cm 2 .
- the relatively high flux from solder balls makes CSPs more vulnerable to soft errors than plastic packages.
- solder balls emit up to 140 times more alpha particles than molding compounds emit.
- BCB layer 112 which is 10 to 100 ⁇ m thick can suppress the large flux of alpha particles from the solder balls better than a polyimide layer could.
- the BCB layer has other favorable properties, as shown in Table 2. TABLE 2 moisture material dielectric constant ( ⁇ ) Tg (° C.) absorption ratio % BCB 2.56 350 0.2 polyimide 3.4 290 2.3
- the BCB layer has a higher glass transition temperature and a lower moisture absorption ratio than the polyimide layer.
- the BCB layer may be more stable at an elevated temperature and can reduce moisture-related device problems.
- Accelerated environment tests confirm the superiority of the BCB layer over a polyimide layer.
- the tests include an infrared (IR)-reflow test, a humidity absorption test and a temperature-cycle test.
- IR infrared
- Two sets of semiconductor devices packaged in the same packages were tested; one with a BCB layer coated on a semiconductor chip and the other with a polyimide layer coated on a semiconductor chip.
- the three tests showed fewer moisture-related problems such as popcorn cracking and die pad corrosion and better thermal stability in the case of the BCB layer than in the case of the polyimide layer.
- Table 3 shows the frequency soft errors in two sets of semiconductor devices.
- One set is 4M SRAM CSPs with 10 ⁇ m thick BCB layers as alpha particle blocking layer 112 of FIG. 4, and the other set is 4 M SRAM CSPs with 10- ⁇ m thick polyimide layers as alpha particle blocking layer 112 .
- ‘FIT’ Fanure In Time
- Cycle indicates the time required for a set of writing and reading operations in a semiconductor device.
- Vcc is the power supply voltage during the writing and reading operation.
- the CSPs with BCB layers resulted in lower soft error FIT than the CSPs with polyimide layers.
- Vcc is 4V and the cycle is 512 ns
- the sum of FIT was 654 in the CSPs with polyimide layers, and 350 in the CSPs with BCB layers. That is, the BCB layer reduced the occurrence of soft errors by almost half.
- FIG. 5 is a sectional view illustrating a semiconductor device that differs from the device of FIG. 4 only in that a polyimide layer 116 is formed on BCB layer 112 before formation of solder balls 114 .
- the fabrication process for the device of FIG. 5 includes forming metal pattern 110 , BCB layer 112 and polyimide layer 116 in sequence. Then, patterning BCB layer 112 and polyimide layer 116 exposes external terminal pads 118 .
- both BCB layer 112 and polyimide layer 116 suppress penetration of the alpha particles from solder balls 114 into the underlying integrated circuit.
- FIG. 6 is a sectional view of a device where BCB layer 112 is on polyimide layer 116 .
- a method for fabricating the semiconductor device of FIG. 6 includes forming polyimide layer 116 on metal pattern later 110 and then forming BCB layer 112 on polyimide layer 116 . Patterning BCB layer 112 and polyimide layer 116 exposes external terminal pads 118 . Again, both BCB layer 112 and polyimide layer 116 suppress penetration of the alpha particles from solder balls 114 into the underlying integrated circuit.
- FIG. 7 is a sectional view illustrating a semiconductor device having polyimide layer 116 formed between metal pattern 110 and passivation layer 108 . That is, after forming passivation layer 108 , polyimide layer 116 is spin-coated on passivation layer 108 and bonding pads 102 , and then patterned so as to expose bonding pads 102 . Here, etching of passivation layer 108 and polyimide layer 116 , for exposing the bondpad 102 , may be performed using the same mask or using separate masks. Then, metal pattern 110 is deposited and patterned on polyimide layer 116 , and BCB layer 112 is formed on metal pattern 110 .
- This embodiment improves blocking of the alpha particles coming through or from external terminal pads 118 toward circuit patterns (not shown) under external terminal pads 118 .
- both BCB layer 112 and polyimide layer 116 block the transmission of alpha particles emitted from the solder ball 114 into a memory cell (not shown) in and on semiconductor substrate 100 .
- FIG. 8 is a sectional view illustrating a semiconductor device that differs from the embodiment of FIG. 5, in that BCB layer 112 is between metal pattern 110 and passivation layer 108 . That is, after forming passivation layer 108 , BCB layer 112 is spin-coated on passivation layer 108 and bonding pads 102 and then patterned to expose bonding pads 102 . Again BCB layer 112 and passivation layer 108 can be patterned using separate masks or using the same mask. Then, metal pattern 110 is formed on BCB layer 112 , and polyimide layer 116 is formed on metal pattern 110 . Like the embodiment of FIG. 7, this embodiment also effectively blocks alpha particles emitted through or from external terminal pads 118 toward circuit patterns (not shown) under external terminal pads 118 .
- FIG. 9 is a sectional view illustrating a semiconductor device having BCB layer 112 between upper passivation layer 106 and lower passivation layer 104 .
- Polyimide layer 116 overlies metal pattern 110 and passivation layer 108 , which includes upper passivation layer 106 , BCB layer 112 , and lower passivation layer 104 .
- a known spin-coating method can form BCB layer 112 on lower passivation layer 104 , and upper passivation layer 106 is formed on BCB layer 112 . All three layers 104 , 112 , and 106 can be etched using the same mask layer to expose bonding pad 102 . Alternatively, separate masks can be employed for patterning layers 104 , 112 , and 106 .
- passivation layer 108 has a multiple-layered structure with a first layer 104 made of SiN or TiN and a third layer 106 formed of PSG or PEOX, and a second layer 112 made of BCB is between the first and third layers 104 and 106 .
- the BCB layer has the inherent physical characteristics, e.g., a low water intake rate, that reduce defects caused by corrosion occurring in the semiconductor package. Accordingly, the BCB layer enhances the reliability of a semiconductor package. Further, the BCB layer has a good high temperature stability when compared to the conventional chip coating materials, and damage at high temperature can be reduced. Still further, the BCB layer has low volatility, does not cause corrosive byproducts during curing, and the overall fabrication can stably be performed.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to semiconductor devices and methods for fabricating semiconductor devices, and more particularly, to packaging and fabrication methods that reduce soft errors in semiconductor devices including memory cells.
- 2. Description of the Related Art
- Packaging protects semiconductor chips from the external environment. For example, in a plastic package, a molding compound encapsulates and protects a semiconductor chip from moisture and contaminants. However, the molding compound may contain radio active elements that can cause soft errors in the semiconductor chip. Soft errors correspond to the phenomenon where an alpha particle or other radiation enters a memory cell and changes the state of a data bit in the memory cell. Soft errors thus degrade the reliability of data stored in the semiconductor chip. Molding compounds usually contain elements that can emit alpha particles which can cause a soft error in a semiconductor chip. Accordingly, efforts have been made to reduce the content of alpha particle emitting elements in molding compounds. However, soft errors continue to be a concern for the semiconductor manufacturing industry as the integration level of semiconductor devices increases because the smaller feature sizes of devices in integrated circuits make alpha particles more effective at causing soft errors.
- In addition to the reduction of alpha particle emitting elements in molding compounds, other methods have been suggested for preventing soft errors. For example, coating a polymer on the chip forms a layer that can block alpha particles. Also, modifying the layout of an integrated circuit can make a chip less susceptible to the alpha particles from the packaging structures.
- Typically, a chip coating is a polyimide layer, which is approximately 10 μm or more thick, on a passivation layer of a semiconductor chip. The polyimide layer or coating reduces the energy of the alpha particles from the molding compound and other sources. U.S. Pat. No. 6,391,915, entitled “Integrated Circuit Having Reduced Soft Errors And Reduced Penetration Of Alkali Impurities Into The Substrate”, which is incorporated here as reference in its entirety, discloses such coating technology.
- In recent years, the physical and electrical limitations of plastic packages have driven the development of new package types. For example, a chip scale package (CSP) does not include the molding compound which is used for plastic packages. However, a CSP has solder bumps formed on the chip as external terminals of the CSP. The solder bumps typically include polonium (Po) as an impurity, and polonium emits alpha particles that can cause soft errors. The flux of the alpha particles from solder is greater than the alpha particle flux from the typical molding compound. Accordingly, conventional chip coatings cannot effectively prevent soft errors in CSPs and other similar semiconductor device packages.
- To solve the above problems, an embodiment of the present invention provides a method for fabricating a semiconductor device that is capable of reducing soft errors. The method coats a chip with a material such as benzo cyclo butene (BCB) which has superior ability to block or slow alpha particles and has a low water intake rate when compared to a conventional polyimide layer.
- Accordingly, to one embodiment of the invention, a method for fabricating a semiconductor device, capable of reducing soft error, includes forming a top metal layer on a semiconductor substrate on which an integrated circuit including a memory cell is formed. Here, the top metal layer includes a bondpad. A passivation layer is on the top metal layer and patterned to expose the bondpad. A metal pattern is formed on the passivation layer and connected to the bondpad for bondpad redistribution, and an insulating layer including a benzo cyclo butene (BCB) layer is formed on the metal pattern.
- The insulating layer can be a single BCB layer or can be composed of a BCB layer and a polyimide layer. In the latter case, either one of the BCB layer and the polyimide layer can be formed on the other. The effective thickness of the BCB layer for alpha particle suppression is 10 to 100 μm. The passivation layer commonly includes a layer selected from a group consisting of a silicon nitride (SiN) layer, a titanium nitride (TiN) layer, a plasma enhanced oxide (PEOX) layer and a phosphor-silicate glass (PSG) layer.
- In alternative embodiments of the invention, the BCB layer can be between the metal pattern and the bondpad or incorporated between an upper passivation layer and a lower passivation layer.
- The BCB layer hardly emits alpha particles and effectively blocks or slows alpha particles emitted from solder bumps that may be attached to the redistributed bonding pads, and thus the BCB layer reduces soft errors in the semiconductor chip. Additionally, since the BCB layer has a low moisture absorption ratio, moisture-related package problems also can be reduced.
- The features and advantages of the present invention will become more apparent from the following description of specific embodiments thereof with reference to the attached drawings in which:
- FIGS. 1 through 4 are partial sectional views of semiconductor structures illustrating a method for fabricating a semiconductor device according to an embodiment of the present invention;
- FIG. 5 is a partial sectional view of a semiconductor device according to another embodiment of the present invention;
- FIG. 6 is a partial sectional view of a semiconductor device according to yet another embodiment of the present invention;
- FIG. 7 is a partial sectional view of a semiconductor device according to still another embodiment of the present invention;
- FIG. 8 is a partial sectional view of a semiconductor device according to another embodiment of the present invention; and
- FIG. 9 is a partial sectional view of a semiconductor device according to another embodiment of the present invention.
- FIGS. 1 through 4 show sectional views of structures formed during fabrication of a semiconductor device in accordance with an embodiment of the invention. The semiconductor device is resistant to soft errors that alpha particles otherwise cause. Referring to FIGS.1 to 4, a method for manufacturing the semiconductor device is explained.
- FIG. 1 shows a semiconductor structure including
bonding pads 102 formed on asemiconductor substrate 100.Semiconductor substrate 100 includes active regions (not shown) and layers (not shown) that form an integrated circuit connected to bonding pad 101. The integrated circuit typically includes a memory cell or other circuitry that is susceptible to soft errors. The processes for forming the integrated circuit up to formingbonding pads 102 are conventional and are not described in detail here. -
Bonding pads 102 are typically aluminum and are portions of a metal pattern (not shown) layer formed on underlying integrated circuit layers (not shown). Anoverlying passivation layer 108 has openings that exposebonding pads 102 for subsequent electrical connections. -
Passivation layer 108, which protects the integrated circuit layers from moisture and external impact, can be formed of a single or complex layer of a material such as silicon nitride (SiN), titanium nitride (TiN), plasma enhanced oxide (PEOX), or phosphor-silicate glass (PSG). In the embodiment shown,passivation layer 108 includes anupper passivation layer 106, which is an SiN layer or a PSG layer, and alower passivation layer 104, which is a PEOX layer or a PSG layer. Known deposition and photolithography techniques can formpassivation layer 108 with openings such thatbonding pads 102 are exposed throughpassivation layer 108. - Referring to FIG. 2, known metal deposition and photolithography techniques form a
metal pattern 110, i.e. a copper layer, onpassivation layer 108 toredistribute bonding pads 102. The redistribution connectsbonding pads 102 toexternal terminal pads 118 having a standardized external terminal format for the semiconductor device. - Referring to FIG. 3, a benzo cyclo butene (BCB)
layer 112 is formed to a thickness of 10 μm to 100 μm onmetal pattern 110 andpassivation layer 108. Openings inBCB layer 112 expose portions ofmetal layer pattern 110 that correspond to externalterminal pads 118. - To form benzo cyclo butene (BCB)
layer 112, liquid benzo cyclo butene (BCB) is spin-coated on the entire surface ofsubstrate 100 and cured at 270° C. for several minutes. Then known photolithography and etching processes expose externalterminal pads 118, also referred to asball pads 118. The glass transition temperature (Tg) of the BCB is approximately 60° C. higher than 290° C., which is the glass transition temperature (Tg) of polyimide. Thus,BCB layer 112 is more stable in packaging processes performed at a high-temperature. Photoresist is deposited on theBCB layer 112, and photolithography and etching pattern the photoresist andBCB layer 112 to exposeexternal terminal pad 118 to which an external connector or terminal such as a solder ball is to be connected. - Referring to FIG. 4, a reflow method attaches solder balls to external
terminal pads 118 to formexternal terminals 114 for a chip scale package (CSP) suitable for mounting on a printed circuit board (PCB). The type of connector and the method for connecting the connector to externalterminal pads 118 may be modified according to the type of semiconductor package. - In a conventional semiconductor package, a material emitting a small flux of alpha particles, e.g., molding compound, may reside on the chip coating layer. However, advanced semiconductor packages such as CSPs or BGAs use solder balls or other package material that emits a relatively large flux of alpha particles when compared to the conventional molding compound. Thus, for advanced semiconductor packages such as shown in FIG. 4,
BCB layer 112 is critical to reducing the probability that the alpha particles will affect a memory cell in the underlying integrated circuit.TABLE 1 Flux of Alpha Particles Emitted Materials (CPH/cm2) Solder ball 1.408 Electroplated Solder 0.17 BCB Layer not detected Low Alpha Particle Molding Compound 0.001 Regular Molding Compound 0.01 - As mentioned above, solder balls emit more alpha particles than does the molding compound used in plastic packages. Table 1 shows the flux of alpha particles emitted from a solder ball, an electroplated solder, a BCB layer and two molding compounds as measured by a low level proportional counter (EG&G Berthold 770 type). In Table 1, the unit CPH/cm2 indicates count per hour/cm2.
- As illustrated in Table 1, the relatively high flux from solder balls makes CSPs more vulnerable to soft errors than plastic packages. In particular, solder balls emit up to 140 times more alpha particles than molding compounds emit. However,
BCB layer 112, which is 10 to 100 μm thick can suppress the large flux of alpha particles from the solder balls better than a polyimide layer could. In addition to the superior alpha particle blocking capability, the BCB layer has other favorable properties, as shown in Table 2.TABLE 2 moisture material dielectric constant (ε) Tg (° C.) absorption ratio % BCB 2.56 350 0.2 polyimide 3.4 290 2.3 - The BCB layer has a higher glass transition temperature and a lower moisture absorption ratio than the polyimide layer. Thus, the BCB layer may be more stable at an elevated temperature and can reduce moisture-related device problems.
- Accelerated environment tests confirm the superiority of the BCB layer over a polyimide layer. The tests include an infrared (IR)-reflow test, a humidity absorption test and a temperature-cycle test. Two sets of semiconductor devices packaged in the same packages were tested; one with a BCB layer coated on a semiconductor chip and the other with a polyimide layer coated on a semiconductor chip. The three tests showed fewer moisture-related problems such as popcorn cracking and die pad corrosion and better thermal stability in the case of the BCB layer than in the case of the polyimide layer.
TABLE 3 4 M SRAM 4 M SRAM (with 10 μm thick polyimide layer) (with 10 μm thick BCB layer) Vcc 4.0 V 4.5 V 5.0 V 4.0 V 4.5 V 5.0 V cycle (ns) 512 1024 512 1024 512 1024 512 1024 512 1024 512 1024 sample#1 77 112 46 43 25 28 44 50 38 42 20 24 sample#2 83 105 59 47 28 22 46 56 37 45 15 23 sample# 3101 96 50 58 24 26 56 59 43 45 24 19 sample#4 98 113 48 56 22 29 56 60 42 43 18 18 sample#5 97 82 42 55 24 37 40 58 42 37 16 25 sum of FIT 654 727 357 375 184 209 350 410 256 308 141 162 average of 91 102 49 52 25 28 48 57 36 42 19 22 FIT - Table 3 shows the frequency soft errors in two sets of semiconductor devices. One set is 4M SRAM CSPs with 10 μm thick BCB layers as alpha
particle blocking layer 112 of FIG. 4, and the other set is 4 M SRAM CSPs with 10-μm thick polyimide layers as alphaparticle blocking layer 112. ‘FIT’ (Failure In Time) indicates the frequency of soft errors when 109 semiconductor devices are used for 1 hour. ‘Cycle’ indicates the time required for a set of writing and reading operations in a semiconductor device. Vcc is the power supply voltage during the writing and reading operation. - The CSPs with BCB layers resulted in lower soft error FIT than the CSPs with polyimide layers. For example, when Vcc is 4V and the cycle is 512 ns, the sum of FIT was 654 in the CSPs with polyimide layers, and 350 in the CSPs with BCB layers. That is, the BCB layer reduced the occurrence of soft errors by almost half. These test results indicate that a BCB layer more effectively blocks the alpha particles emitted from solder balls formed on CSP packages.
- Several variations of the embodiment described with FIGS.1 to 4 are explained below. FIG. 5 is a sectional view illustrating a semiconductor device that differs from the device of FIG. 4 only in that a
polyimide layer 116 is formed onBCB layer 112 before formation ofsolder balls 114. The fabrication process for the device of FIG. 5 includes formingmetal pattern 110,BCB layer 112 andpolyimide layer 116 in sequence. Then, patterningBCB layer 112 andpolyimide layer 116 exposes externalterminal pads 118. In this embodiment, bothBCB layer 112 andpolyimide layer 116 suppress penetration of the alpha particles fromsolder balls 114 into the underlying integrated circuit. - FIG. 6 is a sectional view of a device where
BCB layer 112 is onpolyimide layer 116. A method for fabricating the semiconductor device of FIG. 6 includes formingpolyimide layer 116 on metal pattern later 110 and then formingBCB layer 112 onpolyimide layer 116. PatterningBCB layer 112 andpolyimide layer 116 exposes externalterminal pads 118. Again, bothBCB layer 112 andpolyimide layer 116 suppress penetration of the alpha particles fromsolder balls 114 into the underlying integrated circuit. - FIG. 7 is a sectional view illustrating a semiconductor device having
polyimide layer 116 formed betweenmetal pattern 110 andpassivation layer 108. That is, after formingpassivation layer 108,polyimide layer 116 is spin-coated onpassivation layer 108 andbonding pads 102, and then patterned so as to exposebonding pads 102. Here, etching ofpassivation layer 108 andpolyimide layer 116, for exposing thebondpad 102, may be performed using the same mask or using separate masks. Then,metal pattern 110 is deposited and patterned onpolyimide layer 116, andBCB layer 112 is formed onmetal pattern 110. This embodiment improves blocking of the alpha particles coming through or from externalterminal pads 118 toward circuit patterns (not shown) underexternal terminal pads 118. As in the embodiments of FIGS. 5 and 6, bothBCB layer 112 andpolyimide layer 116 block the transmission of alpha particles emitted from thesolder ball 114 into a memory cell (not shown) in and onsemiconductor substrate 100. - FIG. 8 is a sectional view illustrating a semiconductor device that differs from the embodiment of FIG. 5, in that
BCB layer 112 is betweenmetal pattern 110 andpassivation layer 108. That is, after formingpassivation layer 108,BCB layer 112 is spin-coated onpassivation layer 108 andbonding pads 102 and then patterned to exposebonding pads 102. AgainBCB layer 112 andpassivation layer 108 can be patterned using separate masks or using the same mask. Then,metal pattern 110 is formed onBCB layer 112, andpolyimide layer 116 is formed onmetal pattern 110. Like the embodiment of FIG. 7, this embodiment also effectively blocks alpha particles emitted through or from externalterminal pads 118 toward circuit patterns (not shown) underexternal terminal pads 118. - FIG. 9 is a sectional view illustrating a semiconductor device having
BCB layer 112 betweenupper passivation layer 106 andlower passivation layer 104.Polyimide layer 116 overliesmetal pattern 110 andpassivation layer 108, which includesupper passivation layer 106,BCB layer 112, andlower passivation layer 104. A known spin-coating method can formBCB layer 112 onlower passivation layer 104, andupper passivation layer 106 is formed onBCB layer 112. All threelayers bonding pad 102. Alternatively, separate masks can be employed for patterninglayers terminal pads 118 toward circuit patterns (not shown) underexternal terminal pads 118. Here, in an exemplary embodiment,passivation layer 108 has a multiple-layered structure with afirst layer 104 made of SiN or TiN and athird layer 106 formed of PSG or PEOX, and asecond layer 112 made of BCB is between the first andthird layers - As described above, alpha particles emitted from the packaging material into an internal memory cell of a semiconductor chip are blocked by a BCB layer. As a result, soft errors can be suppressed. Further, the BCB layer has the inherent physical characteristics, e.g., a low water intake rate, that reduce defects caused by corrosion occurring in the semiconductor package. Accordingly, the BCB layer enhances the reliability of a semiconductor package. Further, the BCB layer has a good high temperature stability when compared to the conventional chip coating materials, and damage at high temperature can be reduced. Still further, the BCB layer has low volatility, does not cause corrosive byproducts during curing, and the overall fabrication can stably be performed.
- Although the invention has been described with reference to particular embodiments, the description is only an example of the inventor's application and should not be taken as a limitation. Various adaptations and combinations of features of the embodiments disclosed are within the scope of the invention as defined by the following claims.
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391915A (en) | 1978-11-20 | 1995-02-21 | Hatachi, Ltd. | Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate |
JPS5568659A (en) | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
JP2773660B2 (en) * | 1994-10-27 | 1998-07-09 | 日本電気株式会社 | Semiconductor device |
US5691652A (en) * | 1996-02-20 | 1997-11-25 | Hewlett-Packard Co. | Completion detection as a means for improving alpha soft-error resistance |
US5970346A (en) * | 1997-09-19 | 1999-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fuse window guard ring structure for nitride capped self aligned contact processes |
US6103552A (en) * | 1998-08-10 | 2000-08-15 | Lin; Mou-Shiung | Wafer scale packaging scheme |
-
1998
- 1998-12-28 KR KR1019980059417A patent/KR100301052B1/en not_active IP Right Cessation
-
1999
- 1999-10-12 US US09/416,403 patent/US6410414B1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
KR20000043104A (en) | 2000-07-15 |
KR100301052B1 (en) | 2001-11-02 |
US6410414B1 (en) | 2002-06-25 |
JP2000195891A (en) | 2000-07-14 |
JP4633878B2 (en) | 2011-02-16 |
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