US20020018911A1 - Electroluminescent or photocell device having protective packaging - Google Patents

Electroluminescent or photocell device having protective packaging Download PDF

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Publication number
US20020018911A1
US20020018911A1 US09/309,846 US30984699A US2002018911A1 US 20020018911 A1 US20020018911 A1 US 20020018911A1 US 30984699 A US30984699 A US 30984699A US 2002018911 A1 US2002018911 A1 US 2002018911A1
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Prior art keywords
optoelectronic
rim
lid
cathode
film
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US6383664B2 (en
Inventor
Mark T. Bernius
Edmund P. Woo
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Dow Chemical Co
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Dow Chemical Co
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Application filed by Dow Chemical Co filed Critical Dow Chemical Co
Priority to KR1020017014347A priority patent/KR100618299B1/en
Priority to EP00941111A priority patent/EP1186066B1/en
Priority to JP2000617502A priority patent/JP4614542B2/en
Priority to DE60045307T priority patent/DE60045307D1/en
Priority to PCT/US2000/010392 priority patent/WO2000069002A1/en
Assigned to DOW CHEMICAL COMPANY, THE reassignment DOW CHEMICAL COMPANY, THE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BERNIUS, MARK T., WOO, EDMUND P.
Publication of US20020018911A1 publication Critical patent/US20020018911A1/en
Assigned to DOW CHEMICAL COMPANY, THE reassignment DOW CHEMICAL COMPANY, THE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BERNIUS, MARK T., WOO, EDMUND P.
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2068Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2077Sealing arrangements, e.g. to prevent the leakage of the electrolyte
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/601Assemblies of multiple devices comprising at least one organic radiation-sensitive element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8428Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Definitions

  • This invention relates to devices having an anode, a cathode, and an optoelectronic film between the anode and the cathode.
  • the invention especially relates to such devices where the optoelectronic film comprises an organic optoelectronic material.
  • Optoelectronic devices such as photocells (e.g., photodetectors, photodiodes, photovoltaics) and electroluminescent (EL) elements may formed by sandwiching films comprising optoelectronic materials between electrodes.
  • photocells e.g., photodetectors, photodiodes, photovoltaics
  • EL electroluminescent
  • the film comprising the optoelectronic material may comprise a plurality of layers based on materials of the desired properties.
  • Constituent organic optoelectronic materials may be polymeric, as described by Kraft and coworkers in Angew. Chem. Int. Ed., Vol 37, pp. 402-428, (1998), or monomeric as described by Tang and VanSlyke in U.S. Pat. No. 4,885,221 and by Tang in Information Display, pp. 16-19, October, 1996.
  • Other suitable materials include those disclosed in U.S. Pat. Nos. 5,708,130, and 5,728,801, WO97/33193, U.S. patent application Ser. Nos. 09/123,271 and 60/118,799.
  • the anode is typically a transparent or semi-transparent conducting material, deposited on a transparent substrate, such as glass, so that light can escape from the EL element or so that the optoelectronic film can be exposed to light.
  • Indium-tin-oxide (ITO) is generally the preferred anode material because of its excellent optical transparency and electrical conductivity. Because most organic materials have low electron affinity, efficient injection of electrons into them from the cathode is only possible when the cathode is a metal of low work function which can be deposited as pin-hole-free films by evaporation in high vacuum or by sputtering.
  • Preferred metals are lithium, calcium and magnesium, as well as their alloys and blends with metals of higher work function.
  • polymer films in EL or photocell devices must also be protected from ambient oxygen and moisture as the injection of charge carriers generates highly sensitive chemical species: radical anions formed by injection of electrons and radical cations formed by injection of holes into the polymer film are readily destroyed by oxygen and water.
  • WO97/46052 teaches the use of a sheet of low melting metal alloys bonded onto the cathode of an EL element. Since the alloy layer is in direct contact with the cathode and, indeed, serves as the wiring contact, this approach is not suitable for EL elements with patterned cathodes, which is the preferred method for creating dot-matrix displays.
  • Another approach involves coating the cathode first with an organic film which is, in turn, coated with layers of metals, metal oxides, inorganic oxides, or, inorganic fluorides and the like.
  • the problem with this approach is the application of the organic coating onto the cathode. Once an EL element is formed, no part of it may be exposed to moisture, organic solvent, oxygen, and elevated temperatures without causing damage. Thus the application of an organic coating to a formed EL element, possible in principle, would be extremely difficult to accomplish without damaging the EL element in some way.
  • JP 7014675 Yet another approach described in JP 7014675 involves co-forming films which are mixtures of inorganic fluorides and oxides and plasma-polymerized poly-p-xylylene.
  • the inventor acknowledged the inferior barrier (to oxygen and moisture) properties of the polymer vs inorganic materials because of the presence of macro defects. Therefore, diluting the beneficial barrier properties of the inorganic materials with poly-p-xylylene can hardly be an advantage.
  • organic emitting materials are readily damaged by intense ultraviolet light inherent to the plasma generation process. Even if this packaging approach could protect the cathodes from oxygen and moisture in ambient environment, it is likely to cause irreversible damage to the optoelectronic properties of the organic material.
  • a fourth approach involves sealing the flange of a metal or glass lid with a UV-curable adhesive onto the glass substrate of the EL element in vacuum or in an atmosphere of very dry nitrogen as described by Nakada and Tohma in Display Devices, 1998, pp. 29-32.
  • the dimensions of the lid are chosen such that there is a gap between the inner surface of the lid and the cathode.
  • the adhesive film must provide adhesion between the cover and element and barrier to ingress of moisture and oxygen. Since adhesion and barrier properties result from different chemical designs, it's unlikely for an adhesive to perform well in both functions. Material selection would be a compromise. It is also critical that the adhesive film be free of voids and pinholes and the adhesive be free of volatile organic compounds, dissolved gas, and moisture which would be otherwise trapped in the sealed compartment and will eventually cause device deterioration.
  • FIG. 1A is a drawing of a representative cover with a raised rim for encapsulating optoelectronic elements; 1 B is a cross-sectional view of the representative cover and raised rim.
  • FIG. 2 shows the positioning of a representative cover relative to a representative optoelectronic element.
  • FIG. 3 is a cross section view of FIG. 2 after the cover is attached to the optoelectronic element and sealed with an adhesive.
  • FIG. 4 is a drawing of a glass sheet used in making a representative cover.
  • the device of this invention comprises a optoelectronic element, a cover, and an adhesive.
  • the optoelectronic element comprises a substrate bearing an anode, a film comprising an optoelectronic material, and a cathode.
  • the cover comprises a lid and a raised rim which is recessed from the outer edge of the lid. The cover contacts the element so that the film comprising the optoelectronic material is located between the substrate and the lid, and within the region defined by the raised rim.
  • An adhesive located in a channel defined by the bottom surface of the lid from the outer edge to the rim, the rim, and the top surface of the optoelectronic element outside of the region defined by the rim, serves to attach the cover to the optoelectronic element.
  • Optoelectronic material as used herein means a material which is capable of converting electrical charge to light and vice versa, and optionally whose conductivity is enhanced by exposure to light.
  • Optoelectronic element as used herein means an electroluminescent device, a photocell, or similar devices.
  • FIG. 1A shows a representative cover 2 having a lid 50 and a raised rim 60 extending from the bottom surface 51 of the lid 50 .
  • the rim 60 is recessed from the outer edge 52 of the lid 50 .
  • the optoelectronic element 1 shown in FIGS. 2 and 3 is a 4-pixel electroluminescent element.
  • the element 1 comprises a substrate 10 , two strips of anode 20 and 21 on the substrate, optoelectronic material 30 which is electroluminescent and is coated over the anode 20 , 21 , and the substrate 10 , two strips of cathode 41 and 42 over the optoelectronic material 30 , the cathode strips are in contact with conducting pads 22 and 23 .
  • Alternative means of contacting the anode and cathode to the optoelectronic material may be used.
  • a continuous layer of anode material could be covered by an imagewise distribution of an insulating material, such as a photoresist.
  • the optoelectronic material would then be applied over the anode and the imaged insulating layer. Such a system would provide a luminescent image negative to the image of the insulating material.
  • other supplementary layers which are known in the art, such as barrier or protective layers, may also be used.
  • the conducting pads 22 , 23 and the anodes 20 , 21 are connected to a voltage source in such a way that the anode is positive relative to the conducting pads.
  • the element then becomes electroluminescent in the area of the optoelectronic material defined by the intersections 31 and 32 of the anodes 20 and 21 with the cathodes 41 and 42 .
  • the conducting pads 22 , 23 and the anodes 20 , 21 are connected to a current collector, a current detector or another device run by the generated electricity.
  • the substrate 10 for the optoelectronic element 1 is a rigid, and preferably transparent material such as glass or quartz. At least one of the substrate 10 or the lid 50 should be transparent so that light can enter or exit the device.
  • the anode 20 , 21 is preferably a transparent or semi-transparent material as is known in the art, such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • the thickness of the anode is preferably less than about 1 micron, more preferably less than 0.5 micron and most preferably less than 0.25 micron.
  • the conducting pads may comprise any suitable conductive materials such as an inert metal (e.g. gold) or the material used in the anode (e.g. ITO).
  • the conductive pads preferably have a thickness less than about 1 micron, more preferably less than 0.5 micron and most preferably less than 0.25 micron.
  • the cathode 41 , 42 is typically a metal or metal alloy, having a low work function.
  • Preferred materials include lithium, calcium, magnesium, alloys and blends of such metals with metals of higher work function.
  • a thin, electrically insulating inorganic film is applied over the cathodes by either thermal evaporation or sputtering.
  • Materials for this insulating film may be selected from among oxides of Ca, Mg, Si, Ge, and Mo, fluorides of Li, Ca or Mg, and nitrides of Si, and Ge.
  • film thickness is no greater than 0.05 mm and no less than 0.001 mm with the provision that there is maintained a space between the inner surface of the lid and the surface of this film.
  • the optoelectronic material is preferably an organic charge carrier transporting material.
  • organic charge carrier transporting material For electroluminescent devices these materials must emit light and for photodiodes these materials must be capable of generating or carrying current when exposed to light.
  • These materials are typically highly conjugated materials and may be monomeric or polymeric. Suitable monomeric materials include, for example, tertiary aromatic amines, metal complexes of 8-hydroxyquinoline, diarylbutadienes, stilbenes, and the like as disclosed in U.S. Pat. No. 4,769,292 (Tang et al.) and Tang, Information Display, October (1996), pp. 16-19, both of which are incorporated herein by reference.
  • suitable polymeric materials include polyarylene vinylenes and polyfluorenes. See e.g. Kraft et al., Angew. Chem. Int. Ed. Vol. 37, pp. 402-428 (1998), U.S. Pat. Nos. 5,708,130, 4,885,221 and 5,728,801, WO 97/33193, U.S. patent application Ser. Nos. 09/123,271 and 60/118,799 (Attorney Docket No. 44478), all of which are incorporated herein by reference.
  • the film comprising the optoelectronic material may also comprise other materials blended with the optoelectronic material as may be known in the art, such as stabilizers, adhesion promoters, fillers, matrix materials.
  • the film may comprise more than one layer of various materials, which may be other optoelectronic materials or non-optoelectronic materials such as those which provide barrier or protective properties.
  • Other materials or layers added to the film should be chosen so as not to unduly inhibit the light emission or current generating properties of the film.
  • the rigid transparent substrate 10 bearing at least one transparent anode 20 is coated with the optoelectronic material or its precursor.
  • the cathode is deposited as a pin-hole-free film by evaporation in high vacuum or by sputtering.
  • the cover 2 is placed on the optoelectronic element 1 so that the rim 60 contacts the top surface(s) of the element 1 .
  • the height, b, of the rim 60 is preferably such that there is no contact between the top surface of the optoelectronic element 1 and the lid 50 .
  • Such a gap is desirable to protect the surface of the element from damage.
  • the gap preferably has a thickness of at least 1 micron, more preferably at least 2 microns and most preferably at least 5 microns.
  • the cathodes 41 and 42 which are typically located at the top of the element are particularly fragile.
  • the height, b, of the rim 60 is preferably no greater than 3 mm and no less than 0.05 mm for most optoelectronic elements.
  • the width, a, of the rim 60 is preferably no greater than 5 mm and no less than 0.1 mm.
  • the rim 60 is preferably recessed from the outer edge of the lid by a distance, c, no greater than 5 mm and no less than 0.5 mm.
  • the lid should preferably be fabricated from a rigid material with high barrier properties to oxygen and moisture.
  • suitable materials include, for example, glass, quartz, ceramic, aluminum, and stainless steel.
  • Commercially available plastics may also be selected if the thus fabricated lid is given a barrier coating prior to use. Barrier coating materials include oxides of aluminum and silicon, and nitrides of silicon and germanium.
  • the lid need not be electrically insulating. However, the rim, or portions of the rim which contact the optoelectronic element should be electrically insulating. The rim may be of the same or different material from the lid. Again, high barrier properties to oxygen and moisture are desired.
  • barrier properties provide one of the benefits of this invention which is improved oxygen and moisture barrier compared with a lid with no rim which would simply be attached with an adhesive having relatively poor barrier properties.
  • the rim also prevents the adhesive from seeping into the internal portions of the device which could seriously damage the device.
  • silicon nitride a high barrier electrically insulating material may be deposited onto a sheet of the lid material by sputtering through a mask to form the rim.
  • the rim may be formed by physical or chemical etching of the lid material, such as glass or the rim may be formed by stamping or machining from a metal sheet, followed by covering the surface of the rim with a layer of electrically insulating film such as aluminum oxide, silicon dioxide, silicon nitride, and the like.
  • the thickness of the lid may vary with material choice. However, the thickness should be such to provide resistance to flexing during handling.
  • the cover is positioned in a manner to cover the optoelectronic material while leaving portions of at least some of the conductive materials exposed for connections to a power source (for an electroluminescent device) or a current detector or collector (for photodetectors and photodiodes). Preferably the cover also completely covers the relatively fragile cathodes. It may be noted from FIGS. 2 and 3 that there is a very small gap between the rim 60 and the substrate 10 corresponding to the thickness of the bonding pads 22 , 23 and/or the anode 20 , 21 . This gap however is small enough that there is negligible effect on the barrier properties of the packaging of the device as a whole. Moreover, the adhesive, while not having excellent oxygen and moisture barrier properties, does provide some additional protection.
  • the adhesive is advantageously free or substantially free of volatile organic components and preferably cures at or near room temperatures. UV-curable adhesives and two-component epoxy adhesives having these characteristics would be suitable.
  • the adhesive may be applied by a syringe manually or by an automated dispenser equipped with a fine nozzle, as in many of the commercially available adhesive dispensers, after the cover is put in place.
  • the inner surface of the lid is coated with a thin film of reactive metal which serves as a sacrificial “getter” of traces of moisture, oxygen, and other potential harmful contaminants trapped inside the sealed cavity.
  • the getter film is preferably fabricated by thermal evaporation or sputtering preferably of calcium, barium, magnesium, and the like. Since the amount of trapped contaminants should be very low if the sealing is conducted in a dry, inert atmosphere, film thickness need not exceed 0.5 mm with the provision that there is maintained a space between the cathodes and the getter film.
  • This example illustrates the packaging of an EL element whose active area dimensions, defined as the area of the cathode, are approximately 58 mm ⁇ 40 mm constructed on a piece of ITO-glass of the dimension 75 mm ⁇ 50 mm.
  • the ITO-glass was coated with a photoresist material which then imagewise was exposed to light and developed to provide an image of an insulating material over the ITO.
  • a layer of organic, polymeric optoelectronic material was then applied over the imaged photoresist and ITO.
  • a 35 nm calcium cathode overcoated with 270 nm of aluminum was then applied by vacuum evaporation.
  • the lid was fabricated in the following manner.
  • a rectangular gasket (see FIG. 4) made from an elastic film with outside dimensions of 70 mm ⁇ 46 mm and uniform width of about 1.5 mm was applied onto a piece of glass 73 mm ⁇ 50 mm such that the outer edges of the gasket were uniformed recessed from the perimeter of the glass sheet as shown in FIG. 4.
  • a 100 nm film of barium was vacuum deposited onto the inside cavity formed by the raised rim. This serves as the “getter”.
  • the EL element and the lid were then positioned together as shown in FIGS. 2 and 3.
  • a UV adhesive (Nordland Optical Adhesive 88 from Nordland Corp., New Brunswick, N.J.) was applied by a syringe in the manner already described.
  • the adhesive was cured by UV light for 3 seconds from a light source Dymax Light Welder PC3, 2.5 watt/cm 2 , 320-390 nm from Dymax Corp., Torrington, Conn.
  • the packaged device can be operated and/or stored in ambient air for long periods of time (at least several weeks) without discernable degradation of luminance as determined by visual inspection. The device was still functioning at the time of filing of this application.

Abstract

The device of this invention comprises a optoelectronic element, a cover, and an adhesive. The optoelectronic element comprises a substrate bearing an anode, a film comprising an optoelectronic material, and a cathode. The cover comprises a lid and a raised rim which is recessed from the outer edge of the lid. The cover contacts the element so that the film comprising the optoelectronic material is located between the substrate and the lid, and within the region defined by the raised rim. An adhesive, located in a channel defined by the bottom surface of the lid from the outer edge to the rim, the rim, and the top surface of the optoelectronic element outside of the region defined by the rim, serves to attach the cover to the optoelectronic element.

Description

  • [0001] This application is under a Government contract with The Department of Commerce Naval Air Warfare Center Program, Project Number N00421-98-3-1187.
  • FIELD OF THE INVENTION
  • This invention relates to devices having an anode, a cathode, and an optoelectronic film between the anode and the cathode. The invention especially relates to such devices where the optoelectronic film comprises an organic optoelectronic material. [0002]
  • BACKGROUND OF THE INVENTION
  • Optoelectronic devices such as photocells (e.g., photodetectors, photodiodes, photovoltaics) and electroluminescent (EL) elements may formed by sandwiching films comprising optoelectronic materials between electrodes. When an EL device is subjected to an applied voltage, holes injected from the anode and electrons injected from the cathode will combine in the optoelectronic material to form singlet excitons which can undergo radiative decay, liberating light. Conversely, in photocells, light that is incident upon the optoelectronic material is converted into electric current. [0003]
  • Optoelectronic devices have been made with certain inorganic and organic semiconductors as the optoelectronic materials. In addition, the film comprising the optoelectronic material may comprise a plurality of layers based on materials of the desired properties. Constituent organic optoelectronic materials may be polymeric, as described by Kraft and coworkers in Angew. Chem. Int. Ed., Vol 37, pp. 402-428, (1998), or monomeric as described by Tang and VanSlyke in U.S. Pat. No. 4,885,221 and by Tang in Information Display, pp. 16-19, October, 1996. Other suitable materials include those disclosed in U.S. Pat. Nos. 5,708,130, and 5,728,801, WO97/33193, U.S. patent application Ser. Nos. 09/123,271 and 60/118,799. [0004]
  • The anode is typically a transparent or semi-transparent conducting material, deposited on a transparent substrate, such as glass, so that light can escape from the EL element or so that the optoelectronic film can be exposed to light. Indium-tin-oxide (ITO) is generally the preferred anode material because of its excellent optical transparency and electrical conductivity. Because most organic materials have low electron affinity, efficient injection of electrons into them from the cathode is only possible when the cathode is a metal of low work function which can be deposited as pin-hole-free films by evaporation in high vacuum or by sputtering. Preferred metals are lithium, calcium and magnesium, as well as their alloys and blends with metals of higher work function. The use of low work function metals in EL elements leads to higher EL efficiency but also environmental instability as these metals are known to be extremely sensitive to oxygen and moisture in ambient air. Indeed, EL elements with calcium cathodes have been reported to lose 90% of their efficiency in 37 seconds in a highly humid environment according to Sheats, et al. in Science, Vol. 273, (1996), pp. 884-888. Magnesium is sometimes seen as a compromise choice yet its stability in EL elements still leaves much to be desired as Tang and VanSlyke (U.S. Pat. No. 4,885,211) had shown that efficiency of these elements may drop by more than an order of magnitude in a matter of hours when exposed to an ambience with a relative humidity of 20% or higher due to cathode corrosion. [0005]
  • In addition to the cathodes, polymer films in EL or photocell devices must also be protected from ambient oxygen and moisture as the injection of charge carriers generates highly sensitive chemical species: radical anions formed by injection of electrons and radical cations formed by injection of holes into the polymer film are readily destroyed by oxygen and water. [0006]
  • There is clearly a need for an effective packaging scheme to protect EL elements and photocell elements from ambient environment if they are to be used in commercial displays. This need has been recognized and several packaging approaches have been reported. [0007]
  • WO97/46052 teaches the use of a sheet of low melting metal alloys bonded onto the cathode of an EL element. Since the alloy layer is in direct contact with the cathode and, indeed, serves as the wiring contact, this approach is not suitable for EL elements with patterned cathodes, which is the preferred method for creating dot-matrix displays. [0008]
  • Another approach (see EP 777,281, and WO 97/16053) involves coating the cathode first with an organic film which is, in turn, coated with layers of metals, metal oxides, inorganic oxides, or, inorganic fluorides and the like. The problem with this approach is the application of the organic coating onto the cathode. Once an EL element is formed, no part of it may be exposed to moisture, organic solvent, oxygen, and elevated temperatures without causing damage. Thus the application of an organic coating to a formed EL element, possible in principle, would be extremely difficult to accomplish without damaging the EL element in some way. [0009]
  • Yet another approach described in JP 7014675 involves co-forming films which are mixtures of inorganic fluorides and oxides and plasma-polymerized poly-p-xylylene. The inventor acknowledged the inferior barrier (to oxygen and moisture) properties of the polymer vs inorganic materials because of the presence of macro defects. Therefore, diluting the beneficial barrier properties of the inorganic materials with poly-p-xylylene can hardly be an advantage. Furthermore, organic emitting materials are readily damaged by intense ultraviolet light inherent to the plasma generation process. Even if this packaging approach could protect the cathodes from oxygen and moisture in ambient environment, it is likely to cause irreversible damage to the optoelectronic properties of the organic material. [0010]
  • A fourth approach involves sealing the flange of a metal or glass lid with a UV-curable adhesive onto the glass substrate of the EL element in vacuum or in an atmosphere of very dry nitrogen as described by Nakada and Tohma in Display Devices, 1998, pp. 29-32. The dimensions of the lid are chosen such that there is a gap between the inner surface of the lid and the cathode. The adhesive film must provide adhesion between the cover and element and barrier to ingress of moisture and oxygen. Since adhesion and barrier properties result from different chemical designs, it's unlikely for an adhesive to perform well in both functions. Material selection would be a compromise. It is also critical that the adhesive film be free of voids and pinholes and the adhesive be free of volatile organic compounds, dissolved gas, and moisture which would be otherwise trapped in the sealed compartment and will eventually cause device deterioration. [0011]
  • It is clear that all of the known approaches have limitations. It is the object of this invention to provide a simple, yet effective, packaging scheme free of said limitations.[0012]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1A is a drawing of a representative cover with a raised rim for encapsulating optoelectronic elements; [0013] 1B is a cross-sectional view of the representative cover and raised rim.
  • FIG. 2 shows the positioning of a representative cover relative to a representative optoelectronic element. [0014]
  • FIG. 3 is a cross section view of FIG. 2 after the cover is attached to the optoelectronic element and sealed with an adhesive. [0015]
  • FIG. 4 is a drawing of a glass sheet used in making a representative cover.[0016]
  • SUMMARY OF THE INVENTION
  • The device of this invention comprises a optoelectronic element, a cover, and an adhesive. The optoelectronic element comprises a substrate bearing an anode, a film comprising an optoelectronic material, and a cathode. The cover comprises a lid and a raised rim which is recessed from the outer edge of the lid. The cover contacts the element so that the film comprising the optoelectronic material is located between the substrate and the lid, and within the region defined by the raised rim. An adhesive, located in a channel defined by the bottom surface of the lid from the outer edge to the rim, the rim, and the top surface of the optoelectronic element outside of the region defined by the rim, serves to attach the cover to the optoelectronic element. [0017]
  • DETAILED DESCRIPTION OF THE INVENTION
  • “Optoelectronic material” as used herein means a material which is capable of converting electrical charge to light and vice versa, and optionally whose conductivity is enhanced by exposure to light. [0018]
  • “Optoelectronic element” as used herein means an electroluminescent device, a photocell, or similar devices. [0019]
  • The invention is further described with reference to the figures. Drawings are not scaled to true dimensions some of which are exaggerated for purpose of clarity. FIG. 1A shows a [0020] representative cover 2 having a lid 50 and a raised rim 60 extending from the bottom surface 51 of the lid 50. The rim 60 is recessed from the outer edge 52 of the lid 50.
  • The [0021] optoelectronic element 1 shown in FIGS. 2 and 3 is a 4-pixel electroluminescent element. The element 1 comprises a substrate 10, two strips of anode 20 and 21 on the substrate, optoelectronic material 30 which is electroluminescent and is coated over the anode 20, 21, and the substrate 10, two strips of cathode 41 and 42 over the optoelectronic material 30, the cathode strips are in contact with conducting pads 22 and 23. Alternative means of contacting the anode and cathode to the optoelectronic material may be used. For example, a continuous layer of anode material could be covered by an imagewise distribution of an insulating material, such as a photoresist. The optoelectronic material would then be applied over the anode and the imaged insulating layer. Such a system would provide a luminescent image negative to the image of the insulating material. In addition, other supplementary layers which are known in the art, such as barrier or protective layers, may also be used.
  • In an electroluminescent device, the conducting [0022] pads 22, 23 and the anodes 20, 21 are connected to a voltage source in such a way that the anode is positive relative to the conducting pads. The element then becomes electroluminescent in the area of the optoelectronic material defined by the intersections 31 and 32 of the anodes 20 and 21 with the cathodes 41 and 42. In a photodiode or photodetector, the conducting pads 22, 23 and the anodes 20, 21 are connected to a current collector, a current detector or another device run by the generated electricity.
  • The [0023] substrate 10 for the optoelectronic element 1 is a rigid, and preferably transparent material such as glass or quartz. At least one of the substrate 10 or the lid 50 should be transparent so that light can enter or exit the device. The anode 20, 21 is preferably a transparent or semi-transparent material as is known in the art, such as indium tin oxide (ITO). The thickness of the anode is preferably less than about 1 micron, more preferably less than 0.5 micron and most preferably less than 0.25 micron. The conducting pads may comprise any suitable conductive materials such as an inert metal (e.g. gold) or the material used in the anode (e.g. ITO). The conductive pads preferably have a thickness less than about 1 micron, more preferably less than 0.5 micron and most preferably less than 0.25 micron.
  • The [0024] cathode 41, 42 is typically a metal or metal alloy, having a low work function. Preferred materials include lithium, calcium, magnesium, alloys and blends of such metals with metals of higher work function. Preferably, prior to attachment of the cover, a thin, electrically insulating inorganic film is applied over the cathodes by either thermal evaporation or sputtering. Materials for this insulating film may be selected from among oxides of Ca, Mg, Si, Ge, and Mo, fluorides of Li, Ca or Mg, and nitrides of Si, and Ge. Preferably film thickness is no greater than 0.05 mm and no less than 0.001 mm with the provision that there is maintained a space between the inner surface of the lid and the surface of this film.
  • The optoelectronic material is preferably an organic charge carrier transporting material. For electroluminescent devices these materials must emit light and for photodiodes these materials must be capable of generating or carrying current when exposed to light. These materials are typically highly conjugated materials and may be monomeric or polymeric. Suitable monomeric materials include, for example, tertiary aromatic amines, metal complexes of 8-hydroxyquinoline, diarylbutadienes, stilbenes, and the like as disclosed in U.S. Pat. No. 4,769,292 (Tang et al.) and Tang, Information Display, October (1996), pp. 16-19, both of which are incorporated herein by reference. Examples of suitable polymeric materials include polyarylene vinylenes and polyfluorenes. See e.g. Kraft et al., Angew. Chem. Int. Ed. Vol. 37, pp. 402-428 (1998), U.S. Pat. Nos. 5,708,130, 4,885,221 and 5,728,801, WO 97/33193, U.S. patent application Ser. Nos. 09/123,271 and 60/118,799 (Attorney Docket No. 44478), all of which are incorporated herein by reference. The film comprising the optoelectronic material may also comprise other materials blended with the optoelectronic material as may be known in the art, such as stabilizers, adhesion promoters, fillers, matrix materials. Alternatively, the film may comprise more than one layer of various materials, which may be other optoelectronic materials or non-optoelectronic materials such as those which provide barrier or protective properties. Other materials or layers added to the film should be chosen so as not to unduly inhibit the light emission or current generating properties of the film. [0025]
  • In the preferred embodiment the rigid [0026] transparent substrate 10 bearing at least one transparent anode 20 is coated with the optoelectronic material or its precursor. After forming the layer of the optoelectronic material, the cathode is deposited as a pin-hole-free film by evaporation in high vacuum or by sputtering.
  • The [0027] cover 2 is placed on the optoelectronic element 1 so that the rim 60 contacts the top surface(s) of the element 1. Referring to FIGS. 3 and 1B, the height, b, of the rim 60 is preferably such that there is no contact between the top surface of the optoelectronic element 1 and the lid 50. Such a gap is desirable to protect the surface of the element from damage. The gap preferably has a thickness of at least 1 micron, more preferably at least 2 microns and most preferably at least 5 microns. The cathodes 41 and 42 which are typically located at the top of the element are particularly fragile. The height, b, of the rim 60 is preferably no greater than 3 mm and no less than 0.05 mm for most optoelectronic elements. The width, a, of the rim 60 is preferably no greater than 5 mm and no less than 0.1 mm. The rim 60 is preferably recessed from the outer edge of the lid by a distance, c, no greater than 5 mm and no less than 0.5 mm.
  • The lid should preferably be fabricated from a rigid material with high barrier properties to oxygen and moisture. Examples of suitable materials include, for example, glass, quartz, ceramic, aluminum, and stainless steel. Commercially available plastics may also be selected if the thus fabricated lid is given a barrier coating prior to use. Barrier coating materials include oxides of aluminum and silicon, and nitrides of silicon and germanium. The lid need not be electrically insulating. However, the rim, or portions of the rim which contact the optoelectronic element should be electrically insulating. The rim may be of the same or different material from the lid. Again, high barrier properties to oxygen and moisture are desired. These barrier properties provide one of the benefits of this invention which is improved oxygen and moisture barrier compared with a lid with no rim which would simply be attached with an adhesive having relatively poor barrier properties. The rim also prevents the adhesive from seeping into the internal portions of the device which could seriously damage the device. For, example, silicon nitride, a high barrier electrically insulating material may be deposited onto a sheet of the lid material by sputtering through a mask to form the rim. Alternatively, the rim may be formed by physical or chemical etching of the lid material, such as glass or the rim may be formed by stamping or machining from a metal sheet, followed by covering the surface of the rim with a layer of electrically insulating film such as aluminum oxide, silicon dioxide, silicon nitride, and the like. The thickness of the lid may vary with material choice. However, the thickness should be such to provide resistance to flexing during handling. [0028]
  • The cover is positioned in a manner to cover the optoelectronic material while leaving portions of at least some of the conductive materials exposed for connections to a power source (for an electroluminescent device) or a current detector or collector (for photodetectors and photodiodes). Preferably the cover also completely covers the relatively fragile cathodes. It may be noted from FIGS. 2 and 3 that there is a very small gap between the [0029] rim 60 and the substrate 10 corresponding to the thickness of the bonding pads 22, 23 and/or the anode 20, 21. This gap however is small enough that there is negligible effect on the barrier properties of the packaging of the device as a whole. Moreover, the adhesive, while not having excellent oxygen and moisture barrier properties, does provide some additional protection.
  • The adhesive is advantageously free or substantially free of volatile organic components and preferably cures at or near room temperatures. UV-curable adhesives and two-component epoxy adhesives having these characteristics would be suitable. The adhesive may be applied by a syringe manually or by an automated dispenser equipped with a fine nozzle, as in many of the commercially available adhesive dispensers, after the cover is put in place. [0030]
  • In one preferred embodiment, the inner surface of the lid is coated with a thin film of reactive metal which serves as a sacrificial “getter” of traces of moisture, oxygen, and other potential harmful contaminants trapped inside the sealed cavity. The getter film is preferably fabricated by thermal evaporation or sputtering preferably of calcium, barium, magnesium, and the like. Since the amount of trapped contaminants should be very low if the sealing is conducted in a dry, inert atmosphere, film thickness need not exceed 0.5 mm with the provision that there is maintained a space between the cathodes and the getter film. [0031]
  • EXAMPLE
  • This example illustrates the packaging of an EL element whose active area dimensions, defined as the area of the cathode, are approximately 58 mm×40 mm constructed on a piece of ITO-glass of the dimension 75 mm×50 mm. The ITO-glass was coated with a photoresist material which then imagewise was exposed to light and developed to provide an image of an insulating material over the ITO. A layer of organic, polymeric optoelectronic material was then applied over the imaged photoresist and ITO. A 35 nm calcium cathode overcoated with 270 nm of aluminum was then applied by vacuum evaporation. [0032]
  • The lid was fabricated in the following manner. A rectangular gasket (see FIG. 4) made from an elastic film with outside dimensions of 70 mm×46 mm and uniform width of about 1.5 mm was applied onto a piece of glass 73 mm×50 mm such that the outer edges of the gasket were uniformed recessed from the perimeter of the glass sheet as shown in FIG. 4. [0033]
  • The side of the glass sheet with the gasket was subjected to sand-blasting until the thickness was reduced to about 1.4 mm from the original 1.8 mm. The area covered by the elastic film gasket was not etched by the sandblasting and effectively became the raised rim. The gasket was peeled off and the now completed lid was cleaned and dried. [0034]
  • A 100 nm film of barium was vacuum deposited onto the inside cavity formed by the raised rim. This serves as the “getter”. In an inert atmosphere the EL element and the lid were then positioned together as shown in FIGS. 2 and 3. While clamped firmed to maintain the alignment of the lid and the EL element, a UV adhesive (Nordland Optical Adhesive 88 from Nordland Corp., New Brunswick, N.J.) was applied by a syringe in the manner already described. The adhesive was cured by UV light for 3 seconds from a light source Dymax Light Welder PC3, 2.5 watt/cm[0035] 2, 320-390 nm from Dymax Corp., Torrington, Conn. The packaged device can be operated and/or stored in ambient air for long periods of time (at least several weeks) without discernable degradation of luminance as determined by visual inspection. The device was still functioning at the time of filing of this application.

Claims (12)

What is claimed is:
1. A device comprising:
(a) a optoelectronic element comprising (i) a substrate, (ii) a film comprising an optoelectronic material on a side of the substrate, and (iii) an anode and a cathode each of which are in contact with the film comprising the optoelectronic material and are separated from each other, wherein the side of the substrate bearing the film comprising the optoelectronic material, the film comprising optoelectronic material, the anode and the cathode define a top surface of the optoelectronic element,
(b) a cover comprising (i) a lid having a bottom surface, and an outer edge, and (ii) a rim extending from the bottom surface of the lid, recessed from the outer edge of the lid, and defining a region circumscribed by the rim, wherein the rim contacts the top surface of the optoelectronic element so that the optoelectronic material is within the region defined by the rim, and
(c) an adhesive located in a channel defined by (i) the bottom surface of the lid between the outer edge and the rim, (ii) the rim, and (iii) the top surface of the optoelectronic element not within the region circumscribed by the rim.
2. The device of claim 1 wherein the optoelectronic material is a luminescent organic compound.
3. The device of claim 2 wherein the luminescent organic compound is a polymer.
4. The device of claim 1 wherein the optoelectronic material conducts current when exposed to light.
5. The device of claim 1 wherein the optoelectronic material is sandwiched between the anode and the cathode.
6. The device of claim 1 wherein the cathode comprises a low work function metal.
7. The device of claim 1 wherein there is a thin layer of a getter material on the bottom surface of the lid.
8. The device of claim 1 wherein there is a thin film of an inorganic, insulating material on the cathode.
9. The device of claim 8 wherein there is a thin film of an inorganic, insulating material on the cathode.
10. The device of claim 1 wherein the lid comprises a material selected from glass, quartz, ceramic, rigid polymers having a coating of a barrier material, aluminum, and stainless steel.
11. The device of claim 1 wherein the rim comprises a material selected from glass, quartz, ceramic, rigid polymers having a coating of a barrier material, aluminum, and stainless steel, with the proviso that if the material is electrically conducting, the portion of the rim that contacts the element is coated with an electrically insulating material.
12. The device of claim 1 wherein the adhesive is selected from UV-curable adhesive and two-component epoxy adhesives.
US09/309,846 1999-05-11 1999-05-11 Electroluminescent or photocell device having protective packaging Expired - Lifetime US6383664B2 (en)

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US09/309,846 US6383664B2 (en) 1999-05-11 1999-05-11 Electroluminescent or photocell device having protective packaging
EP00941111A EP1186066B1 (en) 1999-05-11 2000-04-18 An electroluminescent or photocell device having protective packaging
JP2000617502A JP4614542B2 (en) 1999-05-11 2000-04-18 Phosphor voltage light emitting device or photoelectric cell device having protective packaging
DE60045307T DE60045307D1 (en) 1999-05-11 2000-04-18 ELECTROLUMINESCENT DEVICE OR PHOTOCELL WITH PROTECTIVE PACKAGING
KR1020017014347A KR100618299B1 (en) 1999-05-11 2000-04-18 An electroluminescent or photocell device having protective packaging
PCT/US2000/010392 WO2000069002A1 (en) 1999-05-11 2000-04-18 An electroluminescent or photocell device having protective packaging

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Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030071570A1 (en) * 2001-10-03 2003-04-17 Hitoshi Tamashiro Display apparatus and method of manufacturing the same
US20030178620A1 (en) * 2000-09-11 2003-09-25 Adolf Bernds Organic rectifier, circuit, rfid tag and use of an organic rectifier
US20040026689A1 (en) * 2000-08-18 2004-02-12 Adolf Bernds Encapsulated organic-electronic component, method for producing the same and use thereof
US20040026121A1 (en) * 2000-09-22 2004-02-12 Adolf Bernds Electrode and/or conductor track for organic components and production method thereof
US20040063267A1 (en) * 2000-12-08 2004-04-01 Adolf Bernds Organic field-effect transistor, method for structuring and ofet and integrated circuit
US20040062294A1 (en) * 2000-12-08 2004-04-01 Wolfgang Clemens Device for detecting and/or transmitting at least one environmental influence, method for producing said device and use thereof
US20040094771A1 (en) * 2001-03-26 2004-05-20 Adolf Bernds Device with at least two organic electronic components and method for producing the same
US20040209191A1 (en) * 2001-06-01 2004-10-21 Adolf Bernds Method for producing conductive structures by means of printing technique, and active components produced therefrom for integrated circuits
US20040219460A1 (en) * 2001-02-09 2004-11-04 Adolf Bernds Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
WO2004112160A1 (en) * 2003-06-16 2004-12-23 Koninklijke Philips Electronics N.V. Double seal with getter in flexible organic displays
US20040262599A1 (en) * 2001-06-01 2004-12-30 Adolf Bernds Organic field effect transistor, method for production and use thereof in the assembly of integrated circuits
US20050048803A1 (en) * 2001-10-16 2005-03-03 Erwann Guillet Insulator for an organic electronic component
EP1526589A2 (en) 2003-10-21 2005-04-27 Lg Electronics Inc. Electro luminescence display device
US20050106507A1 (en) * 2002-03-21 2005-05-19 Adolf Bernds Device and method for laser structuring functional polymers and the use thereof
US20050224787A1 (en) * 2002-06-13 2005-10-13 Wolfgang Clemens Substrate for an organic field effect transistor, use of said substrate, method for increasing the charge carrier mobility, and organic field effect transistor (ofet)
US20060035423A1 (en) * 2002-11-19 2006-02-16 Walter Fix Organic electronic component comprising the same organic material for at least two functional layers
US20060057769A1 (en) * 2003-01-21 2006-03-16 Adolf Bernds Use of conductive carbon black/graphite mixtures for the production of low-cost electronics
US20060118779A1 (en) * 2002-11-19 2006-06-08 Wolfgang Clemens Organic Electronic Component Comprising A Patterned, Semi-Conducting Functional Layer And A Method For Producing Said Component
US20060118778A1 (en) * 2002-11-05 2006-06-08 Wolfgang Clemens Organic electronic component with high-resolution structuring and method for the production thereof
US20060118780A1 (en) * 2003-01-09 2006-06-08 Axel Gerlt Organo-resistive memory unit
US20060138701A1 (en) * 2003-07-03 2006-06-29 Jurgen Ficker Method and device for structuring organic layers
US20060160266A1 (en) * 2003-01-21 2006-07-20 Adolf Bernds Organic electronic component and method for producing organic electronic devices
US20060220005A1 (en) * 2003-07-03 2006-10-05 Walter Fix Logic gate with a potential-free gate electrode for organic integrated circuits
US20070008019A1 (en) * 2003-09-03 2007-01-11 Wolfgang Clemens Mechanical control elements for organic polymer electronic devices
US20070017401A1 (en) * 2003-09-03 2007-01-25 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US20070030623A1 (en) * 2003-08-20 2007-02-08 Polyic Gmbh & Co. Kg Organic capacitor having a voltage-controlled capacitance
US20070051940A1 (en) * 2003-01-29 2007-03-08 Wolfgang Clemens Device and method for determining the physical condition of an animal
US7223995B2 (en) 2002-03-21 2007-05-29 Polyic Gmbh & Co. Kg Logic components comprising organic field effect transistors
US20080061986A1 (en) * 2004-08-23 2008-03-13 Polylc Gmbh & Co. Kg External Package Capable of Being Radio-Tagged
US7414513B2 (en) 2002-08-23 2008-08-19 Polyic Gmbh & Co. Kg Organic component for overvoltage protection and associated circuit
US20080197343A1 (en) * 2004-12-10 2008-08-21 Robert Blache Organic Field Effect Transistor Gate
US20080203383A1 (en) * 2005-04-15 2008-08-28 Polyic Gmbh & Co. Kg Multi-Layer Composite Body Having an Electronic Function
US20080204069A1 (en) * 2005-03-01 2008-08-28 Polyic Gmbh & Co. Kg Electronic Module With Organic Logic Circuit Elements
US20080218315A1 (en) * 2004-12-10 2008-09-11 Markus Bohm Electronic Component Comprising a Modulator
US20080237584A1 (en) * 2005-09-06 2008-10-02 Polylc Gmbh & Co. Kg Organic Component and Electric Circuit Comprising Said Component
US7479670B2 (en) 2003-08-25 2009-01-20 Polyic Gmbh & Co Kg Organic electronic component with high resolution structuring, and method of the production thereof
US7483275B2 (en) 2001-10-18 2009-01-27 Polyic Gmbh & Co. Kg Electronic unit, circuit design for the same, and production method
DE102007039291A1 (en) * 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor module and method for producing such
US20090108253A1 (en) * 2005-07-29 2009-04-30 Andreas Ullmann Electronic component
US20090189147A1 (en) * 2004-01-14 2009-07-30 Walter Fix Organic transistor comprising a self-aligning gate electrode, and method for the production thereof
US20090237248A1 (en) * 2004-12-10 2009-09-24 Wolfgang Clemens Identification System
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US7656036B2 (en) 2003-02-14 2010-02-02 Nec Corporation Line component and semiconductor circuit using line component
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US20100214748A1 (en) * 2005-09-16 2010-08-26 Polyic Gmbh & Co. Kg Metal roof truss connector assembly
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
WO2011035783A1 (en) 2009-09-24 2011-03-31 Msg Lithoglas Ag Method for producing a housing with a component in a hollow space, corresponding housing, method for producing a semi-finished product, and semi-finished product
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US20110115101A1 (en) * 2008-05-30 2011-05-19 Alexander Knobloch Electronic circuit
US8044517B2 (en) 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
US9004972B2 (en) 2006-01-20 2015-04-14 Samsung Display Co., Ltd. Organic light-emitting display device with frit seal and reinforcing structure
US20150194627A1 (en) * 2013-07-17 2015-07-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Glass packaging structure and glass packaging method of utilizing the same
USD986062S1 (en) * 2021-04-19 2023-05-16 Ningbo Yunzhong Protective Equipment Co., Ltd. Buffer packaging

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003509814A (en) * 1999-09-09 2003-03-11 シーメンス アクチエンゲゼルシヤフト Component element and method of manufacturing the same
TWI222839B (en) * 1999-12-17 2004-10-21 Osram Opto Semiconductors Gmbh Method for encapsulation of electronic devices
US7394153B2 (en) 1999-12-17 2008-07-01 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
EP1240808B1 (en) 1999-12-17 2003-05-21 Osram Opto Semiconductors GmbH Encapsulation for organic led device
TWI222838B (en) * 2001-04-10 2004-10-21 Chi Mei Optoelectronics Corp Packaging method of organic electroluminescence light-emitting display device
US6888307B2 (en) * 2001-08-21 2005-05-03 Universal Display Corporation Patterned oxygen and moisture absorber for organic optoelectronic device structures
JP2003086355A (en) * 2001-09-05 2003-03-20 Kiko Kenji Kagi Kofun Yugenkoshi Sealing structure, sealing method, and sealing device for organic el element
KR100768182B1 (en) * 2001-10-26 2007-10-17 삼성에스디아이 주식회사 Organic electro luminescence device and method of manufacturing the same
US6515312B1 (en) * 2001-12-03 2003-02-04 Windell Corporation Method for packaging organic electroluminescent device
US6936964B2 (en) * 2002-09-30 2005-08-30 Eastman Kodak Company OLED lamp
US20050116245A1 (en) * 2003-04-16 2005-06-02 Aitken Bruce G. Hermetically sealed glass package and method of fabrication
KR100499509B1 (en) 2003-04-16 2005-07-05 엘지전자 주식회사 Method for Fabricating Polymer Organic Electroluminescence Device
US20040206953A1 (en) * 2003-04-16 2004-10-21 Robert Morena Hermetically sealed glass package and method of fabrication
JP2005302605A (en) * 2004-04-14 2005-10-27 Canon Inc Semiconductor device
TW200537976A (en) * 2004-05-13 2005-11-16 Au Optronics Corp Protection structure of organic light-emitting display unit and fabricating method thereof
US7648166B2 (en) * 2005-05-04 2010-01-19 Tk Holdings Inc. Occupant protection apparatus
US7745798B2 (en) * 2005-11-15 2010-06-29 Fujifilm Corporation Dual-phosphor flat panel radiation detector
KR100982412B1 (en) * 2008-05-29 2010-09-15 (주)에이디에스 Electro-optic device and mthod for manufacturing the same
US20100083998A1 (en) * 2008-10-06 2010-04-08 Emcore Corporation Solar Cell Receiver with a Glass Lid
DE102014100627A1 (en) * 2014-01-21 2015-07-23 Osram Oled Gmbh Optoelectronic component and method for producing an optoelectronic component
US10947736B2 (en) 2016-03-25 2021-03-16 Carefree/Scott Fetzer Company Residential awning canopy assembly
US20170275884A1 (en) 2016-03-25 2017-09-28 Carefree/Scott Fetzer Company Residential awning canopy assembly

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885221A (en) 1986-12-06 1989-12-05 Kabushiki Kaisha Toshiba Electrophotography apparatus and electrophtographic process for developing positive image from positive or negative film
US4885211A (en) 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
US4769292A (en) 1987-03-02 1988-09-06 Eastman Kodak Company Electroluminescent device with modified thin film luminescent zone
US4839557A (en) * 1987-12-18 1989-06-13 Gte Products Corporation Fill member for electroluminescent panels
KR960000980B1 (en) * 1990-03-27 1996-01-15 가부시기가이샤 히다찌 세이사꾸쇼 Adhesive agent for substrate of electroless plating printed
JPH0589958A (en) 1991-09-27 1993-04-09 Komatsu Ltd Thin film el panel
JP2797905B2 (en) 1993-06-25 1998-09-17 凸版印刷株式会社 Organic thin film EL device
JP2848207B2 (en) * 1993-09-17 1999-01-20 凸版印刷株式会社 Organic thin film EL device
US5708130A (en) 1995-07-28 1998-01-13 The Dow Chemical Company 2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers
WO1997016053A1 (en) 1995-10-20 1997-05-01 Robert Bosch Gmbh Electroluminescent layer system
JPH09148066A (en) 1995-11-24 1997-06-06 Pioneer Electron Corp Organic electroluminescent element
US5811177A (en) 1995-11-30 1998-09-22 Motorola, Inc. Passivation of electroluminescent organic devices
AU2277697A (en) 1996-02-23 1997-09-22 Dow Chemical Company, The Cross-linkable or chain extendable polyarylpolyamines and films thereof
US6175186B1 (en) 1996-02-26 2001-01-16 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and method for manufacturing the same
WO1997046052A1 (en) 1996-05-28 1997-12-04 Philips Electronics N.V. Organic electroluminescent device
US5728801A (en) 1996-08-13 1998-03-17 The Dow Chemical Company Poly (arylamines) and films thereof
US5990615A (en) * 1997-02-03 1999-11-23 Nec Corporation Organic electroluminescent display with protective layer on cathode and an inert medium
US6049167A (en) 1997-02-17 2000-04-11 Tdk Corporation Organic electroluminescent display device, and method and system for making the same
JP3975374B2 (en) * 1997-10-17 2007-09-12 チッソ株式会社 Organic EL device
JP2000208252A (en) * 1999-01-14 2000-07-28 Tdk Corp Organic electroluminescent element

Cited By (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875975B2 (en) * 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
US20040026689A1 (en) * 2000-08-18 2004-02-12 Adolf Bernds Encapsulated organic-electronic component, method for producing the same and use thereof
US20030178620A1 (en) * 2000-09-11 2003-09-25 Adolf Bernds Organic rectifier, circuit, rfid tag and use of an organic rectifier
US20040026121A1 (en) * 2000-09-22 2004-02-12 Adolf Bernds Electrode and/or conductor track for organic components and production method thereof
US7534034B2 (en) 2000-12-08 2009-05-19 Polyic Gmbh & Co. Kg Device for detecting at least one environmental influence
US20040062294A1 (en) * 2000-12-08 2004-04-01 Wolfgang Clemens Device for detecting and/or transmitting at least one environmental influence, method for producing said device and use thereof
US7229868B2 (en) 2000-12-08 2007-06-12 Polyic Gmbh & Co. Kg Organic field-effect transistor, method for structuring an OFET and integrated circuit
US20040063267A1 (en) * 2000-12-08 2004-04-01 Adolf Bernds Organic field-effect transistor, method for structuring and ofet and integrated circuit
US20040219460A1 (en) * 2001-02-09 2004-11-04 Adolf Bernds Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
US7238961B2 (en) 2001-02-09 2007-07-03 Polyic Gmbh & Co. Kg Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
US20040094771A1 (en) * 2001-03-26 2004-05-20 Adolf Bernds Device with at least two organic electronic components and method for producing the same
US20040209191A1 (en) * 2001-06-01 2004-10-21 Adolf Bernds Method for producing conductive structures by means of printing technique, and active components produced therefrom for integrated circuits
US20040262599A1 (en) * 2001-06-01 2004-12-30 Adolf Bernds Organic field effect transistor, method for production and use thereof in the assembly of integrated circuits
US20030071570A1 (en) * 2001-10-03 2003-04-17 Hitoshi Tamashiro Display apparatus and method of manufacturing the same
US7298023B2 (en) 2001-10-16 2007-11-20 Polyic Gmbh & Co. Kg Electronic device with organic insulator
US20050048803A1 (en) * 2001-10-16 2005-03-03 Erwann Guillet Insulator for an organic electronic component
US7483275B2 (en) 2001-10-18 2009-01-27 Polyic Gmbh & Co. Kg Electronic unit, circuit design for the same, and production method
US20050106507A1 (en) * 2002-03-21 2005-05-19 Adolf Bernds Device and method for laser structuring functional polymers and the use thereof
US7223995B2 (en) 2002-03-21 2007-05-29 Polyic Gmbh & Co. Kg Logic components comprising organic field effect transistors
US20050224787A1 (en) * 2002-06-13 2005-10-13 Wolfgang Clemens Substrate for an organic field effect transistor, use of said substrate, method for increasing the charge carrier mobility, and organic field effect transistor (ofet)
US7709865B2 (en) 2002-06-13 2010-05-04 Polyic Gmbh & Co. Kg Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)
US8044517B2 (en) 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
US7414513B2 (en) 2002-08-23 2008-08-19 Polyic Gmbh & Co. Kg Organic component for overvoltage protection and associated circuit
US20060118778A1 (en) * 2002-11-05 2006-06-08 Wolfgang Clemens Organic electronic component with high-resolution structuring and method for the production thereof
US7641857B2 (en) 2002-11-14 2010-01-05 Polyic Gmbh & Co. Kg Measuring apparatus used for determining an analyte in a liquid sample, comprising polymer electronic components
US20060118779A1 (en) * 2002-11-19 2006-06-08 Wolfgang Clemens Organic Electronic Component Comprising A Patterned, Semi-Conducting Functional Layer And A Method For Producing Said Component
US7442954B2 (en) 2002-11-19 2008-10-28 Polyic Gmbh & Co. Kg Organic electronic component comprising a patterned, semi-conducting functional layer and a method for producing said component
US20060035423A1 (en) * 2002-11-19 2006-02-16 Walter Fix Organic electronic component comprising the same organic material for at least two functional layers
US20060118780A1 (en) * 2003-01-09 2006-06-08 Axel Gerlt Organo-resistive memory unit
US20060160266A1 (en) * 2003-01-21 2006-07-20 Adolf Bernds Organic electronic component and method for producing organic electronic devices
US20060057769A1 (en) * 2003-01-21 2006-03-16 Adolf Bernds Use of conductive carbon black/graphite mixtures for the production of low-cost electronics
US7329559B2 (en) 2003-01-21 2008-02-12 Polyic Gmbh & Co. Kg Use of conductive carbon black/graphite mixtures for the production of low-cost electronics
US20070051940A1 (en) * 2003-01-29 2007-03-08 Wolfgang Clemens Device and method for determining the physical condition of an animal
US7656036B2 (en) 2003-02-14 2010-02-02 Nec Corporation Line component and semiconductor circuit using line component
US20060139555A1 (en) * 2003-06-16 2006-06-29 Janssen Esther Anna W G Double seal with getter in flexible organic displays
WO2004112160A1 (en) * 2003-06-16 2004-12-23 Koninklijke Philips Electronics N.V. Double seal with getter in flexible organic displays
US20060220005A1 (en) * 2003-07-03 2006-10-05 Walter Fix Logic gate with a potential-free gate electrode for organic integrated circuits
US20060138701A1 (en) * 2003-07-03 2006-06-29 Jurgen Ficker Method and device for structuring organic layers
US20070030623A1 (en) * 2003-08-20 2007-02-08 Polyic Gmbh & Co. Kg Organic capacitor having a voltage-controlled capacitance
US7479670B2 (en) 2003-08-25 2009-01-20 Polyic Gmbh & Co Kg Organic electronic component with high resolution structuring, and method of the production thereof
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US20070017401A1 (en) * 2003-09-03 2007-01-25 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US20070008019A1 (en) * 2003-09-03 2007-01-11 Wolfgang Clemens Mechanical control elements for organic polymer electronic devices
US7576294B2 (en) 2003-09-03 2009-08-18 Polyic Gmbh & Co. Kg Mechanical control elements for organic polymer electronic devices
EP1526589A2 (en) 2003-10-21 2005-04-27 Lg Electronics Inc. Electro luminescence display device
US20050116221A1 (en) * 2003-10-21 2005-06-02 Lg Electronics Inc. Electro luminescence display device
US7189990B2 (en) 2003-10-21 2007-03-13 Lg Electronics Inc. Electro luminescence display device
EP1526589A3 (en) * 2003-10-21 2006-07-26 Lg Electronics Inc. Electro luminescence display device
US20090189147A1 (en) * 2004-01-14 2009-07-30 Walter Fix Organic transistor comprising a self-aligning gate electrode, and method for the production thereof
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US20080061986A1 (en) * 2004-08-23 2008-03-13 Polylc Gmbh & Co. Kg External Package Capable of Being Radio-Tagged
US20080197343A1 (en) * 2004-12-10 2008-08-21 Robert Blache Organic Field Effect Transistor Gate
US20090237248A1 (en) * 2004-12-10 2009-09-24 Wolfgang Clemens Identification System
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US20080218315A1 (en) * 2004-12-10 2008-09-11 Markus Bohm Electronic Component Comprising a Modulator
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US20080204069A1 (en) * 2005-03-01 2008-08-28 Polyic Gmbh & Co. Kg Electronic Module With Organic Logic Circuit Elements
US7589553B2 (en) 2005-03-01 2009-09-15 Polyic Gmbh & Co. Kg Electronic module with organic logic circuit elements
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US20080203383A1 (en) * 2005-04-15 2008-08-28 Polyic Gmbh & Co. Kg Multi-Layer Composite Body Having an Electronic Function
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US20090108253A1 (en) * 2005-07-29 2009-04-30 Andreas Ullmann Electronic component
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US20080237584A1 (en) * 2005-09-06 2008-10-02 Polylc Gmbh & Co. Kg Organic Component and Electric Circuit Comprising Said Component
US20100214748A1 (en) * 2005-09-16 2010-08-26 Polyic Gmbh & Co. Kg Metal roof truss connector assembly
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same
CN108249764A (en) * 2006-01-20 2018-07-06 三星显示有限公司 Organic light-emitting display device and its manufacturing method
US9004972B2 (en) 2006-01-20 2015-04-14 Samsung Display Co., Ltd. Organic light-emitting display device with frit seal and reinforcing structure
US9564555B2 (en) 2007-08-20 2017-02-07 Osram Opto Semiconductors Gmbh Opto-electronic semiconductor module and method for the production thereof
US20100230697A1 (en) * 2007-08-20 2010-09-16 Osram Opto Semiconductors Gmbh Opto-electronic semiconductor module and method for the production thereof
DE102007039291A1 (en) * 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor module and method for producing such
US20110115101A1 (en) * 2008-05-30 2011-05-19 Alexander Knobloch Electronic circuit
US8350259B2 (en) 2008-05-30 2013-01-08 Polyic Gmbh & Co. Kg Electronic circuit
US8966748B2 (en) 2009-09-24 2015-03-03 Msg Lithoglas Ag Method for manufacturing an arrangement with a component on a carrier substrate and a method for manufacturing a semi-finished product
WO2011035783A1 (en) 2009-09-24 2011-03-31 Msg Lithoglas Ag Method for producing a housing with a component in a hollow space, corresponding housing, method for producing a semi-finished product, and semi-finished product
DE202010018593U1 (en) 2009-09-24 2018-03-19 Msg Lithoglas Gmbh Arrangement with a component on a carrier substrate and semifinished product and a semi-finished product
EP3297036A1 (en) 2009-09-24 2018-03-21 MSG Lithoglas GmbH Method for producing an assembly comprising a component on a carrier substrate and assembly and method for producing a semi-finished product
US10580912B2 (en) 2009-09-24 2020-03-03 Msg Lithoglas Ag Arrangement with a component on a carrier substrate, an arrangement and a semi-finished product
US20150194627A1 (en) * 2013-07-17 2015-07-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Glass packaging structure and glass packaging method of utilizing the same
US9966559B2 (en) * 2013-07-17 2018-05-08 Shenzhen China Star Optoelectronics Technology Co., Ltd. Glass packaging structure and glass packaging method of utilizing the same
USD986062S1 (en) * 2021-04-19 2023-05-16 Ningbo Yunzhong Protective Equipment Co., Ltd. Buffer packaging

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JP4614542B2 (en) 2011-01-19
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WO2000069002A1 (en) 2000-11-16
KR20020000643A (en) 2002-01-05
EP1186066B1 (en) 2010-12-01
US6383664B2 (en) 2002-05-07
JP2003523044A (en) 2003-07-29
EP1186066A1 (en) 2002-03-13

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