US20020000666A1 - Self-repairing interconnections for electrical circuits - Google Patents
Self-repairing interconnections for electrical circuits Download PDFInfo
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- US20020000666A1 US20020000666A1 US09/386,789 US38678999A US2002000666A1 US 20020000666 A1 US20020000666 A1 US 20020000666A1 US 38678999 A US38678999 A US 38678999A US 2002000666 A1 US2002000666 A1 US 2002000666A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention generally relates to methods and apparatus for forming self-repairing interconnections for electrical circuits. More particularly, the present invention relates to an interconnection system using metal-doped chalcogenide material in contact with metal interconnections which heal defects in the metal interconnections.
- metal lines are desirably designed or made wider than the minimum lithographical line width, preferably by a factor of two or more, to reduce current density at the thin regions of the lines and thereby reduce electromigration. Manufacturing devices with wider lines, however, reduces the overall interconnection density for the devices.
- the present invention relates to methods and apparatus for forming self-healing interconnections for electrical circuits.
- an interconnection metal e.g., copper, silver, and the like
- an interconnection metal is deposited on a layer of metal-doped chalcogenide material.
- the break is healed (i.e., filled in) by the formation of a metal element formed by metal precipitation at the break.
- FIG. 1 is a sectional schematic illustration of a multi-level interconnection system in accordance with one aspect of the present invention.
- FIGS. 2 A- 2 C are schematic depictions of a break and healing process in an interconnection pathway in accordance with the present invention.
- interconnection system 10 in accordance with a preferred embodiment of the present invention is shown.
- interconnection system 10 includes a plurality of metal interconnection pathways 18 in contact with a metal-doped chalcogenide material 12 , dielectric separation layers 14 , and vias 16 .
- a suitable metal-doped chalcogenide material includes any compound containing sulfur, selenium and/or tellurium, whether ternary, quaternary or higher compounds.
- the chalcogenide material is selected from the group consisting of arsenic, germanium, selenium, tellurium, bismuth, nickel, sulfur, polonium and zinc (preferably, arsenic sulphide, germanium sulfide, or germanium selenide) and the metal comprises various Group I or Group II metals (preferably, silver, copper, zinc or a combination thereof).
- the metal-doped chalcogenide material may be obtained by photo dissolution, by depositing from a source comprising the metal and chalcogenide material, or by other means known in the art.
- a source comprising the metal and chalcogenide material
- metal-doped chalcogenide material see U.S. Pat. No. 5,761,115, issued on Jun. 2, 1998 to Kozicki et al, the entire disclosure of which is incorporated herein by reference.
- chalcogenide material 12 is doped with silver or copper.
- metal pathways 18 are also formed from silver or copper.
- any conductive material may be used as long as there are no adverse reaction between the conductor and the chalcogenide material.
- metal pathways 18 are deposited on and in contact with chalcogenide material 12 using any convenient deposition method. Although in FIG. 1 metal pathways 18 are depicted above chalcogenide material 12 , metal pathways 18 can be deposited beneath or completely within chalcogenide material 12 . Additionally, vias 14 are preferably kept free of the metal-doped chalcogenide material to minimize the resistance of the connection between interconnect layers.
- a defect in a conductor pathway 22 can result from thinning at topographical features (e.g., an underlying step), line narrowing by reflective notching during a photolithography step, morphological effects such as width variations at grain boundaries after etch, and the like.
- topographical features e.g., an underlying step
- morphological effects such as width variations at grain boundaries after etch, and the like.
- pathway 22 resistance increases, thereby also increasing the voltage drop across pathway 22 .
- this potential difference creates an electric field which moves dissolved metal ions from metal-doped chalcogenide material 24 to the most electrically negative part of the defect, whereupon the metal ions will come out of solution and form a solid metal element 26 (e.g., a dendrite) at the surface of chalcogenide material 24 .
- Metal element 26 will grow until the defect is bridged (i.e., returned to a low resistance state).
- metal element 26 is depicted in FIG. 2C as substantially oval, metal element 26 may assume any suitable shape.
Abstract
A self-repairing interconnection system and methods for forming the system are disclosed. The system includes a metal pathway adjacent a metal-doped chalcogenide material. The system is configured to repair defects in the metal pathway by donating metallic ions from the metal-doped chalcogenide material to the metal pathway.
Description
- This application claims the benefit of pending Provisional Application Ser. No. 60/098,609, filed Aug. 31, 1998.
- The present invention generally relates to methods and apparatus for forming self-repairing interconnections for electrical circuits. More particularly, the present invention relates to an interconnection system using metal-doped chalcogenide material in contact with metal interconnections which heal defects in the metal interconnections.
- The performance and cost of electronic systems have improved continuously due in part to advances in manufacturing progressively smaller electronic devices. Advances in semiconductor technology have resulted in a tremendous reduction in the feature sizes of electronic devices, thereby increasing the density of electrical circuits. In fact, over the past two decades, the density of components which can be located on a single microchip has increased by a factor of 100 per decade.
- As the density of components has increased, so has the requirement for the density of interconnection pathways formed between these components. In order to increase the density of interconnection pathways, the size of interconnections must be reduced. Small geometry interconnections, however, are highly prone to failure by electromigration at points where the lines have a reduced cross-section due to thinning at topographical features (e.g., an underlying step), line narrowing by reflective notching during a photolithography step, and morphological effects such as width variations at grain boundaries after etching. The ultimate quality and reliability of many electronic systems are determined largely by the reliability of the interconnection system.
- To mitigate problems associated with high density devices and increase device reliability, metal lines are desirably designed or made wider than the minimum lithographical line width, preferably by a factor of two or more, to reduce current density at the thin regions of the lines and thereby reduce electromigration. Manufacturing devices with wider lines, however, reduces the overall interconnection density for the devices.
- Therefore, interconnections capable of healing defects and/or breaks in interconnection pathways are highly desirable to thereby increase overall system reliability.
- The present invention relates to methods and apparatus for forming self-healing interconnections for electrical circuits. In accordance with an exemplary embodiment of the present invention, an interconnection metal (e.g., copper, silver, and the like) is deposited on a layer of metal-doped chalcogenide material. When breaks occur in the interconnection metal, the break is healed (i.e., filled in) by the formation of a metal element formed by metal precipitation at the break.
- The present invention will hereinafter be described in conjunction with the appended drawing figures, wherein like numerals denote like elements, and:
- FIG. 1 is a sectional schematic illustration of a multi-level interconnection system in accordance with one aspect of the present invention; and
- FIGS.2A-2C are schematic depictions of a break and healing process in an interconnection pathway in accordance with the present invention.
- In order to provide a more thorough understanding of the present invention, the following description sets forth numerous specific details, such as specific material, parameters, etc. However, these specific details need not be employed to practice the present invention.
- With reference to FIG. 1, a multi-level self-
healing interconnect system 10 in accordance with a preferred embodiment of the present invention is shown. In accordance with one aspect of the present invention,interconnection system 10 includes a plurality ofmetal interconnection pathways 18 in contact with a metal-dopedchalcogenide material 12,dielectric separation layers 14, andvias 16. - In accordance with one aspect of the present invention, a suitable metal-doped chalcogenide material includes any compound containing sulfur, selenium and/or tellurium, whether ternary, quaternary or higher compounds. In a preferred embodiment of the present invention, the chalcogenide material is selected from the group consisting of arsenic, germanium, selenium, tellurium, bismuth, nickel, sulfur, polonium and zinc (preferably, arsenic sulphide, germanium sulfide, or germanium selenide) and the metal comprises various Group I or Group II metals (preferably, silver, copper, zinc or a combination thereof). The metal-doped chalcogenide material may be obtained by photo dissolution, by depositing from a source comprising the metal and chalcogenide material, or by other means known in the art. For a more detailed discussion of metal-doped chalcogenide material, see U.S. Pat. No. 5,761,115, issued on Jun. 2, 1998 to Kozicki et al, the entire disclosure of which is incorporated herein by reference.
- In an exemplary embodiment,
chalcogenide material 12 is doped with silver or copper. In accordance with this embodiment,metal pathways 18 are also formed from silver or copper. However, any conductive material may be used as long as there are no adverse reaction between the conductor and the chalcogenide material. - In accordance with one aspect of the present invention,
metal pathways 18 are deposited on and in contact withchalcogenide material 12 using any convenient deposition method. Although in FIG. 1metal pathways 18 are depicted abovechalcogenide material 12,metal pathways 18 can be deposited beneath or completely withinchalcogenide material 12. Additionally,vias 14 are preferably kept free of the metal-doped chalcogenide material to minimize the resistance of the connection between interconnect layers. - With reference to FIG. 2A, a defect in a conductor pathway22 can result from thinning at topographical features (e.g., an underlying step), line narrowing by reflective notching during a photolithography step, morphological effects such as width variations at grain boundaries after etch, and the like. With additional reference to FIG. 2B, as a weak region 23 in conductor pathway 22 becomes thinner (e.g., by electromigration), pathway 22 resistance increases, thereby also increasing the voltage drop across pathway 22. With additional reference to FIG. 2C, this potential difference creates an electric field which moves dissolved metal ions from metal-doped
chalcogenide material 24 to the most electrically negative part of the defect, whereupon the metal ions will come out of solution and form a solid metal element 26 (e.g., a dendrite) at the surface ofchalcogenide material 24.Metal element 26 will grow until the defect is bridged (i.e., returned to a low resistance state). Althoughmetal element 26 is depicted in FIG. 2C as substantially oval,metal element 26 may assume any suitable shape. - In this manner, defects and breaks in interconnection pathways can be repaired in-situ. Additionally, as described above, this repair mechanism is self-regulating as it will only operate when the defect resistance becomes high and will turn-off when the repair is complete. Accordingly, the present self-healing interconnection system provides for increased system reliability.
- While preferred embodiments of the present invention have been shown in the drawings and described above, it will be apparent to one skilled in the art that various embodiments of the present invention are possible. For example, the present invention may be used to cure interconnection pathways in 3-dimensional circuits or any semiconductor or integrated circuit application. Therefore, the present invention should not be construed as limited to the specific form shown and described above.
Claims (2)
1. A self-healing interconnect system comprising:
a metal interconnection pathway; and
a metal-doped chalcogenide material adjacent said metal interconnection pathway.
2. A method of forming a self-healing interconnect system, said method comprising of steps of:
forming a metal-doped chalcogenide material; and
forming metal pathways adjacent said metal doped chalcogenide material.
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US09/386,789 US6388324B2 (en) | 1998-08-31 | 1999-08-31 | Self-repairing interconnections for electrical circuits |
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US9860998P | 1998-08-31 | 1998-08-31 | |
US09/386,789 US6388324B2 (en) | 1998-08-31 | 1999-08-31 | Self-repairing interconnections for electrical circuits |
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US6388324B2 US6388324B2 (en) | 2002-05-14 |
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Cited By (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020116955A1 (en) * | 2001-02-19 | 2002-08-29 | Sumitomo Electric Industries, Ltd. | Method of forming soot preform |
US20030027416A1 (en) * | 2001-08-01 | 2003-02-06 | Moore John T. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
US20030045054A1 (en) * | 2001-08-29 | 2003-03-06 | Campbell Kristy A. | Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device |
US20030043896A1 (en) * | 2001-08-31 | 2003-03-06 | Koninklijke Philips Electronics N.V. | Device for and method of determining the quality of a data signal |
US20030045049A1 (en) * | 2001-08-29 | 2003-03-06 | Campbell Kristy A. | Method of forming chalcogenide comprising devices |
US20030047772A1 (en) * | 2001-03-15 | 2003-03-13 | Jiutao Li | Agglomeration elimination for metal sputter deposition of chalcogenides |
US20030117831A1 (en) * | 2001-12-20 | 2003-06-26 | Glen Hush | Programmable conductor random access memory and a method for writing thereto |
US20030146427A1 (en) * | 2001-08-30 | 2003-08-07 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US20030155606A1 (en) * | 2002-02-15 | 2003-08-21 | Campbell Kristy A. | Method to alter chalcogenide glass for improved switching characteristics |
US20030156463A1 (en) * | 2002-02-19 | 2003-08-21 | Casper Stephen L. | Programmable conductor random access memory and method for sensing same |
US20030156468A1 (en) * | 2002-02-20 | 2003-08-21 | Campbell Kristy A. | Resistance variable 'on' memory |
US20030155589A1 (en) * | 2002-02-20 | 2003-08-21 | Campbell Kristy A. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US20030173558A1 (en) * | 2002-03-14 | 2003-09-18 | Campbell Kristy A. | Methods and apparatus for resistance variable material cells |
US20030193059A1 (en) * | 2002-04-10 | 2003-10-16 | Gilton Terry L. | Programmable conductor memory cell structure and method therefor |
US20030193053A1 (en) * | 2002-04-10 | 2003-10-16 | Gilton Terry L. | Thin film diode integrated with chalcogenide memory cell |
US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
US20030206433A1 (en) * | 2002-05-03 | 2003-11-06 | Glen Hush | Dual write cycle programmable conductor memory system and method of operation |
US6646902B2 (en) | 2001-08-30 | 2003-11-11 | Micron Technology, Inc. | Method of retaining memory state in a programmable conductor RAM |
US6653193B2 (en) | 2000-12-08 | 2003-11-25 | Micron Technology, Inc. | Resistance variable device |
US20030228717A1 (en) * | 2002-06-06 | 2003-12-11 | Jiutao Li | Co-sputter deposition of metal-doped chalcogenides |
US20040029351A1 (en) * | 2002-01-31 | 2004-02-12 | Gilton Terry L. | Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
US20040038480A1 (en) * | 2002-08-22 | 2004-02-26 | Moore John T. | Method of manufacture of a PCRAM memory cell |
US20040044841A1 (en) * | 2002-08-29 | 2004-03-04 | Gilton Terry L. | Software refreshed memory device and method |
US20040040835A1 (en) * | 2002-08-29 | 2004-03-04 | Jiutao Li | Silver selenide film stoichiometry and morphology control in sputter deposition |
US20040043245A1 (en) * | 2002-08-29 | 2004-03-04 | Moore John T. | Method to control silver concentration in a resistance variable memory element |
US20040040837A1 (en) * | 2002-08-29 | 2004-03-04 | Mcteer Allen | Method of forming chalcogenide sputter target |
US20040042259A1 (en) * | 2002-08-29 | 2004-03-04 | Campbell Kristy A. | Single polarity programming of a pcram structure |
US20040043553A1 (en) * | 2002-06-06 | 2004-03-04 | Jiutao Li | Elimination of dendrite formation during metal/chalcogenide glass deposition |
US6709958B2 (en) | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US6710423B2 (en) | 2001-03-01 | 2004-03-23 | Micron Technology, Inc. | Chalcogenide comprising device |
US6737312B2 (en) | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6751114B2 (en) | 2002-03-28 | 2004-06-15 | Micron Technology, Inc. | Method for programming a memory cell |
US20040157417A1 (en) * | 2002-08-29 | 2004-08-12 | Moore John T. | Methods to form a memory cell with metal-rich metal chalcogenide |
US6784018B2 (en) | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US20040171208A1 (en) * | 2002-04-10 | 2004-09-02 | Gilton Terry L. | Method of manufacture of programmable conductor memory |
US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US20040179390A1 (en) * | 2003-03-12 | 2004-09-16 | Campbell Kristy A. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US20040180533A1 (en) * | 2003-03-14 | 2004-09-16 | Li Li | Method for filling via with metal |
US20040192006A1 (en) * | 2002-02-20 | 2004-09-30 | Campbell Kristy A. | Layered resistance variable memory device and method of fabrication |
US20040202016A1 (en) * | 2003-04-10 | 2004-10-14 | Campbell Kristy A. | Differential negative resistance memory |
US6809362B2 (en) | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
US6818481B2 (en) | 2001-03-07 | 2004-11-16 | Micron Technology, Inc. | Method to manufacture a buried electrode PCRAM cell |
US20040229423A1 (en) * | 2001-11-19 | 2004-11-18 | Moore John T. | Electrode structure for use in an integrated circuit |
US6847535B2 (en) | 2002-02-20 | 2005-01-25 | Micron Technology, Inc. | Removable programmable conductor memory card and associated read/write device and method of operation |
US20050017233A1 (en) * | 2003-07-21 | 2005-01-27 | Campbell Kristy A. | Performance PCRAM cell |
US20050054207A1 (en) * | 2002-08-29 | 2005-03-10 | Micron Technology, Inc. | Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
US20050056910A1 (en) * | 2003-09-17 | 2005-03-17 | Gilton Terry L. | Non-volatile memory structure |
US20050122757A1 (en) * | 2003-12-03 | 2005-06-09 | Moore John T. | Memory architecture and method of manufacture and operation thereof |
US20050146958A1 (en) * | 2002-01-04 | 2005-07-07 | John Moore | Rewrite prevention in a variable resistance memory |
US20050162883A1 (en) * | 2002-08-08 | 2005-07-28 | Hasan Nejad | Columnar 1T-nMemory cell structure and its method of formation and operation |
US20050201174A1 (en) * | 2004-03-10 | 2005-09-15 | Klein Dean A. | Power management control and controlling memory refresh operations |
US20050202588A1 (en) * | 2004-03-10 | 2005-09-15 | Brooks Joseph F. | Method of forming a chalcogenide material containing device |
US20050247927A1 (en) * | 2002-07-10 | 2005-11-10 | Campbell Kristy A | Assemblies displaying differential negative resistance |
US20060012008A1 (en) * | 2004-07-19 | 2006-01-19 | Campbell Kristy A | Resistance variable memory device and method of fabrication |
US20060011910A1 (en) * | 2004-07-19 | 2006-01-19 | Micron Technology, Inc. | PCRAM device with switching glass layer |
US20060033094A1 (en) * | 2004-08-12 | 2006-02-16 | Campbell Kristy A | Resistance variable memory with temperature tolerant materials |
US20060035403A1 (en) * | 2004-08-12 | 2006-02-16 | Campbell Kristy A | PCRAM device with switching glass layer |
US20060044906A1 (en) * | 2004-09-01 | 2006-03-02 | Ethan Williford | Sensing of resistance variable memory devices |
US20060099822A1 (en) * | 2001-05-11 | 2006-05-11 | Harshfield Steven T | Method of making a memory cell |
US20060131556A1 (en) * | 2004-12-22 | 2006-06-22 | Micron Technology, Inc. | Small electrode for resistance variable devices |
US20060131555A1 (en) * | 2004-12-22 | 2006-06-22 | Micron Technology, Inc. | Resistance variable devices with controllable channels |
US20060237707A1 (en) * | 2005-04-22 | 2006-10-26 | Micron Technology, Inc. | Memory array for increased bit density and method of forming the same |
US20060256640A1 (en) * | 2005-05-16 | 2006-11-16 | Micron Technology, Inc. | Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory |
US20070008768A1 (en) * | 2005-07-08 | 2007-01-11 | Micron Technology, Inc. | Process for erasing chalcogenide variable resistance memory bits |
US20070023744A1 (en) * | 2005-08-01 | 2007-02-01 | Micron Technology, Inc. | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US20070030554A1 (en) * | 2005-08-02 | 2007-02-08 | Micron Technology, Inc. | Method and apparatus for providing color changing thin film material |
US20070029537A1 (en) * | 2005-08-02 | 2007-02-08 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US20070037316A1 (en) * | 2005-08-09 | 2007-02-15 | Micron Technology, Inc. | Memory cell contact using spacers |
US20070034921A1 (en) * | 2005-08-09 | 2007-02-15 | Micron Technology, Inc. | Access transistor for memory device |
US20070035990A1 (en) * | 2005-08-15 | 2007-02-15 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US20070047297A1 (en) * | 2005-08-31 | 2007-03-01 | Campbell Kristy A | Resistance variable memory element with threshold device and method of forming the same |
US20070059882A1 (en) * | 2005-04-22 | 2007-03-15 | Micron Technology, Inc. | Memory elements having patterned electrodes and method of forming the same |
US20070090354A1 (en) * | 2005-08-11 | 2007-04-26 | Micron Technology, Inc. | Chalcogenide-based electrokinetic memory element and method of forming the same |
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US8101936B2 (en) | 2005-02-23 | 2012-01-24 | Micron Technology, Inc. | SnSe-based limited reprogrammable cell |
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US11430233B2 (en) | 2017-06-16 | 2022-08-30 | Arizona Board Of Regents On Behalf Of Arizona State University | Polarized scanning of dendritic identifiers |
CN111033624B (en) | 2017-08-11 | 2023-10-03 | 美高森美SoC公司 | Circuit and method for programming a resistive random access memory device |
WO2019210129A1 (en) | 2018-04-26 | 2019-10-31 | Kozicki Michael N | Fabrication of dendritic structures and tags |
US11244722B2 (en) | 2019-09-20 | 2022-02-08 | Arizona Board Of Regents On Behalf Of Arizona State University | Programmable interposers for electrically connecting integrated circuits |
US11935843B2 (en) | 2019-12-09 | 2024-03-19 | Arizona Board Of Regents On Behalf Of Arizona State University | Physical unclonable functions with silicon-rich dielectric devices |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6030853A (en) * | 1993-08-13 | 2000-02-29 | Drs Fpa, L.P. | Method of producing intrinsic p-type HgCdTe using CdTe capping layer |
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
-
1999
- 1999-08-31 US US09/386,789 patent/US6388324B2/en not_active Expired - Lifetime
Cited By (221)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6653193B2 (en) | 2000-12-08 | 2003-11-25 | Micron Technology, Inc. | Resistance variable device |
US6737726B2 (en) | 2000-12-08 | 2004-05-18 | Micron Technology, Inc. | Resistance variable device, analog memory device, and programmable memory cell |
US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
US6833559B2 (en) | 2001-02-08 | 2004-12-21 | Micron Technology, Inc. | Non-volatile resistance variable device |
US20050019699A1 (en) * | 2001-02-08 | 2005-01-27 | Moore John T. | Non-volatile resistance variable device |
US20020116955A1 (en) * | 2001-02-19 | 2002-08-29 | Sumitomo Electric Industries, Ltd. | Method of forming soot preform |
US6727192B2 (en) | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
US6710423B2 (en) | 2001-03-01 | 2004-03-23 | Micron Technology, Inc. | Chalcogenide comprising device |
US6709887B2 (en) | 2001-03-01 | 2004-03-23 | Micron Technology, Inc. | Method of forming a chalcogenide comprising device |
US6818481B2 (en) | 2001-03-07 | 2004-11-16 | Micron Technology, Inc. | Method to manufacture a buried electrode PCRAM cell |
US6734455B2 (en) | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US20030047772A1 (en) * | 2001-03-15 | 2003-03-13 | Jiutao Li | Agglomeration elimination for metal sputter deposition of chalcogenides |
US20040144968A1 (en) * | 2001-03-15 | 2004-07-29 | Jiutao Li | Agglomeration elimination for metal sputter deposition of chalcogenides |
US20040144973A1 (en) * | 2001-03-15 | 2004-07-29 | Jiutao Li | Agglomeration elimination for metal sputter deposition of chalcogenides |
US20070235712A1 (en) * | 2001-05-11 | 2007-10-11 | Harshfield Steven T | Resistance variable memory cells |
US7102150B2 (en) | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
US7687793B2 (en) | 2001-05-11 | 2010-03-30 | Micron Technology, Inc. | Resistance variable memory cells |
US20060099822A1 (en) * | 2001-05-11 | 2006-05-11 | Harshfield Steven T | Method of making a memory cell |
US20030027416A1 (en) * | 2001-08-01 | 2003-02-06 | Moore John T. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
US6737312B2 (en) | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6784018B2 (en) | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US20030045054A1 (en) * | 2001-08-29 | 2003-03-06 | Campbell Kristy A. | Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device |
US20040191961A1 (en) * | 2001-08-29 | 2004-09-30 | Campbell Kristy A. | Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry |
US20050157573A1 (en) * | 2001-08-29 | 2005-07-21 | Campbell Kristy A. | Method of forming non-volatile resistance variable devices |
US20030045049A1 (en) * | 2001-08-29 | 2003-03-06 | Campbell Kristy A. | Method of forming chalcogenide comprising devices |
US7863597B2 (en) | 2001-08-29 | 2011-01-04 | Micron Technology, Inc. | Resistance variable memory devices with passivating material |
US20060270099A1 (en) * | 2001-08-29 | 2006-11-30 | Micron Technology, Inc. | Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry |
US6881623B2 (en) | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
US20080185574A1 (en) * | 2001-08-29 | 2008-08-07 | Campbell Kristy A | Method of forming non-volatile resistance variable devices |
US20040124406A1 (en) * | 2001-08-29 | 2004-07-01 | Campbell Kristy A. | Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device |
US7067348B2 (en) | 2001-08-29 | 2006-06-27 | Micron Technology, Inc. | Method of forming a programmable memory cell and chalcogenide structure |
US6646902B2 (en) | 2001-08-30 | 2003-11-11 | Micron Technology, Inc. | Method of retaining memory state in a programmable conductor RAM |
US6709958B2 (en) | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US20050026433A1 (en) * | 2001-08-30 | 2005-02-03 | Jiutao Li | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US6800504B2 (en) | 2001-08-30 | 2004-10-05 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US20040007718A1 (en) * | 2001-08-30 | 2004-01-15 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6813176B2 (en) | 2001-08-30 | 2004-11-02 | Micron Technology, Inc. | Method of retaining memory state in a programmable conductor RAM |
US20030146427A1 (en) * | 2001-08-30 | 2003-08-07 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6730547B2 (en) | 2001-08-30 | 2004-05-04 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US20030043896A1 (en) * | 2001-08-31 | 2003-03-06 | Koninklijke Philips Electronics N.V. | Device for and method of determining the quality of a data signal |
US20040238958A1 (en) * | 2001-11-19 | 2004-12-02 | Moore John T. | Electrode structure for use in an integrated circuit |
US20040232551A1 (en) * | 2001-11-19 | 2004-11-25 | Moore John T. | Electrode structure for use in an integrated circuit |
US20040229423A1 (en) * | 2001-11-19 | 2004-11-18 | Moore John T. | Electrode structure for use in an integrated circuit |
US7869249B2 (en) | 2001-11-20 | 2011-01-11 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US20050018509A1 (en) * | 2001-11-20 | 2005-01-27 | Glen Hush | Complementary bit resistance memory sensor and method of operation |
US20060245234A1 (en) * | 2001-11-20 | 2006-11-02 | Glen Hush | Method of operating a complementary bit resistance memory sensor and method of operation |
US20060023532A1 (en) * | 2001-11-20 | 2006-02-02 | Glen Hush | Method of operating a complementary bit resistance memory sensor |
US20030117831A1 (en) * | 2001-12-20 | 2003-06-26 | Glen Hush | Programmable conductor random access memory and a method for writing thereto |
US20050146958A1 (en) * | 2002-01-04 | 2005-07-07 | John Moore | Rewrite prevention in a variable resistance memory |
US20040029351A1 (en) * | 2002-01-31 | 2004-02-12 | Gilton Terry L. | Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
US6812087B2 (en) | 2002-01-31 | 2004-11-02 | Micron Technology, Inc. | Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures |
US20040223390A1 (en) * | 2002-02-15 | 2004-11-11 | Campbell Kristy A. | Resistance variable memory element having chalcogenide glass for improved switching characteristics |
US20030155606A1 (en) * | 2002-02-15 | 2003-08-21 | Campbell Kristy A. | Method to alter chalcogenide glass for improved switching characteristics |
US20050018493A1 (en) * | 2002-02-19 | 2005-01-27 | Casper Stephen L. | Programmable conductor random access memory and method for sensing same |
US20030156463A1 (en) * | 2002-02-19 | 2003-08-21 | Casper Stephen L. | Programmable conductor random access memory and method for sensing same |
US6791885B2 (en) | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
US20070128792A1 (en) * | 2002-02-20 | 2007-06-07 | Micron Technology, Inc. | Multiple data state memory cell |
US8263958B2 (en) | 2002-02-20 | 2012-09-11 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US7151273B2 (en) | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US20040223357A1 (en) * | 2002-02-20 | 2004-11-11 | Gilton Terry L. | Multiple data state memory cell |
US8080816B2 (en) | 2002-02-20 | 2011-12-20 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US20070007506A1 (en) * | 2002-02-20 | 2007-01-11 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US20070102691A1 (en) * | 2002-02-20 | 2007-05-10 | Campbell Kristy A | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US6809362B2 (en) | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
US20050157567A1 (en) * | 2002-02-20 | 2005-07-21 | Gilton Terry L. | Multiple data state memory cell |
US20030156468A1 (en) * | 2002-02-20 | 2003-08-21 | Campbell Kristy A. | Resistance variable 'on' memory |
US20030155589A1 (en) * | 2002-02-20 | 2003-08-21 | Campbell Kristy A. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US20040192006A1 (en) * | 2002-02-20 | 2004-09-30 | Campbell Kristy A. | Layered resistance variable memory device and method of fabrication |
US20100219391A1 (en) * | 2002-02-20 | 2010-09-02 | Campbell Kristy A | Layered resistance variable memory device and method of fabrication |
US20100140579A1 (en) * | 2002-02-20 | 2010-06-10 | Campbell Kristy A | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US6847535B2 (en) | 2002-02-20 | 2005-01-25 | Micron Technology, Inc. | Removable programmable conductor memory card and associated read/write device and method of operation |
US7646007B2 (en) | 2002-02-20 | 2010-01-12 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US8466445B2 (en) | 2002-02-20 | 2013-06-18 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof |
US7723713B2 (en) | 2002-02-20 | 2010-05-25 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US7030405B2 (en) | 2002-03-14 | 2006-04-18 | Micron Technology, Inc. | Method and apparatus for resistance variable material cells |
US20030173558A1 (en) * | 2002-03-14 | 2003-09-18 | Campbell Kristy A. | Methods and apparatus for resistance variable material cells |
US6751114B2 (en) | 2002-03-28 | 2004-06-15 | Micron Technology, Inc. | Method for programming a memory cell |
US20040038432A1 (en) * | 2002-04-10 | 2004-02-26 | Micron Technology, Inc. | Programmable conductor memory cell structure and method therefor |
US20030193059A1 (en) * | 2002-04-10 | 2003-10-16 | Gilton Terry L. | Programmable conductor memory cell structure and method therefor |
US20040171208A1 (en) * | 2002-04-10 | 2004-09-02 | Gilton Terry L. | Method of manufacture of programmable conductor memory |
US20050101084A1 (en) * | 2002-04-10 | 2005-05-12 | Gilton Terry L. | Thin film diode integrated with chalcogenide memory cell |
US7132675B2 (en) | 2002-04-10 | 2006-11-07 | Micron Technology, Inc. | Programmable conductor memory cell structure and method therefor |
US20060243973A1 (en) * | 2002-04-10 | 2006-11-02 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
US20030193053A1 (en) * | 2002-04-10 | 2003-10-16 | Gilton Terry L. | Thin film diode integrated with chalcogenide memory cell |
US6838307B2 (en) | 2002-04-10 | 2005-01-04 | Micron Technology, Inc. | Programmable conductor memory cell structure and method therefor |
US20030206433A1 (en) * | 2002-05-03 | 2003-11-06 | Glen Hush | Dual write cycle programmable conductor memory system and method of operation |
US6731528B2 (en) | 2002-05-03 | 2004-05-04 | Micron Technology, Inc. | Dual write cycle programmable conductor memory system and method of operation |
US20090098717A1 (en) * | 2002-06-06 | 2009-04-16 | Jiutao Li | Co-sputter deposition of metal-doped chalcogenides |
US20040043553A1 (en) * | 2002-06-06 | 2004-03-04 | Jiutao Li | Elimination of dendrite formation during metal/chalcogenide glass deposition |
US6825135B2 (en) | 2002-06-06 | 2004-11-30 | Micron Technology, Inc. | Elimination of dendrite formation during metal/chalcogenide glass deposition |
US20030228717A1 (en) * | 2002-06-06 | 2003-12-11 | Jiutao Li | Co-sputter deposition of metal-doped chalcogenides |
US7964436B2 (en) | 2002-06-06 | 2011-06-21 | Round Rock Research, Llc | Co-sputter deposition of metal-doped chalcogenides |
US20040235235A1 (en) * | 2002-06-06 | 2004-11-25 | Jiutao Li | Co-sputter deposition of metal-doped chalcogenides |
US20050247927A1 (en) * | 2002-07-10 | 2005-11-10 | Campbell Kristy A | Assemblies displaying differential negative resistance |
US20080188034A1 (en) * | 2002-07-10 | 2008-08-07 | Campbell Kristy A | Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance |
US7879646B2 (en) | 2002-07-10 | 2011-02-01 | Micron Technology, Inc. | Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance |
US20060171224A1 (en) * | 2002-08-08 | 2006-08-03 | Hasan Nejad | 1T-nmemory cell structure and its method of formation and operation |
US20050162883A1 (en) * | 2002-08-08 | 2005-07-28 | Hasan Nejad | Columnar 1T-nMemory cell structure and its method of formation and operation |
US20060234425A1 (en) * | 2002-08-22 | 2006-10-19 | Micron Technology, Inc. | Method of manufacture of a PCRAM memory cell |
US20040038480A1 (en) * | 2002-08-22 | 2004-02-26 | Moore John T. | Method of manufacture of a PCRAM memory cell |
US20040238918A1 (en) * | 2002-08-22 | 2004-12-02 | Moore John T. | Method of manufacture of a PCRAM memory cell |
US20040157417A1 (en) * | 2002-08-29 | 2004-08-12 | Moore John T. | Methods to form a memory cell with metal-rich metal chalcogenide |
US20070258308A1 (en) * | 2002-08-29 | 2007-11-08 | Gilton Terry L | Software refreshed memory device and method |
US20080210921A1 (en) * | 2002-08-29 | 2008-09-04 | Jiutao Li | Silver selenide film stoichiometry and morphology control in sputter deposition |
US7944768B2 (en) | 2002-08-29 | 2011-05-17 | Micron Technology, Inc. | Software refreshed memory device and method |
US7768861B2 (en) | 2002-08-29 | 2010-08-03 | Micron Technology, Inc. | Software refreshed memory device and method |
US20040042259A1 (en) * | 2002-08-29 | 2004-03-04 | Campbell Kristy A. | Single polarity programming of a pcram structure |
US20060104142A1 (en) * | 2002-08-29 | 2006-05-18 | Gilton Terry L | Software refreshed memory device and method |
US20040040837A1 (en) * | 2002-08-29 | 2004-03-04 | Mcteer Allen | Method of forming chalcogenide sputter target |
US20090257299A1 (en) * | 2002-08-29 | 2009-10-15 | Gilton Terry L | Software refreshed memory device and method |
US7692177B2 (en) | 2002-08-29 | 2010-04-06 | Micron Technology, Inc. | Resistance variable memory element and its method of formation |
US20050054207A1 (en) * | 2002-08-29 | 2005-03-10 | Micron Technology, Inc. | Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
US20040044841A1 (en) * | 2002-08-29 | 2004-03-04 | Gilton Terry L. | Software refreshed memory device and method |
US20100262791A1 (en) * | 2002-08-29 | 2010-10-14 | Gilton Terry L | Software refreshed memory device and method |
US20040040835A1 (en) * | 2002-08-29 | 2004-03-04 | Jiutao Li | Silver selenide film stoichiometry and morphology control in sputter deposition |
US20040043245A1 (en) * | 2002-08-29 | 2004-03-04 | Moore John T. | Method to control silver concentration in a resistance variable memory element |
US20060252176A1 (en) * | 2002-08-29 | 2006-11-09 | Micron Technology, Inc. | Memory element and its method of formation |
US20050098428A1 (en) * | 2002-08-29 | 2005-05-12 | Jiutao Li | Silver selenide film stoichiometry and morphology control in sputter deposition |
US20040175859A1 (en) * | 2002-08-29 | 2004-09-09 | Campbell Kristy A. | Single polarity programming of a PCRAM structure |
US9552986B2 (en) | 2002-08-29 | 2017-01-24 | Micron Technology, Inc. | Forming a memory device using sputtering to deposit silver-selenide film |
US7542319B2 (en) | 2003-03-12 | 2009-06-02 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US7315465B2 (en) | 2003-03-12 | 2008-01-01 | Micro Technology, Inc. | Methods of operating and forming chalcogenide glass constant current devices |
US6813178B2 (en) | 2003-03-12 | 2004-11-02 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US20040179390A1 (en) * | 2003-03-12 | 2004-09-16 | Campbell Kristy A. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US20040233728A1 (en) * | 2003-03-12 | 2004-11-25 | Campbell Kristy A. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US6912147B2 (en) | 2003-03-12 | 2005-06-28 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US20070201255A1 (en) * | 2003-03-12 | 2007-08-30 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US20050133778A1 (en) * | 2003-03-12 | 2005-06-23 | Campbell Kristy A. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US7410863B2 (en) | 2003-03-14 | 2008-08-12 | Micron Technology, Inc. | Methods of forming and using memory cell structures |
US7126179B2 (en) | 2003-03-14 | 2006-10-24 | Micron Technology, Inc. | Memory cell intermediate structure |
US20040180533A1 (en) * | 2003-03-14 | 2004-09-16 | Li Li | Method for filling via with metal |
US20070035041A1 (en) * | 2003-03-14 | 2007-02-15 | Li Li | Methods of forming and using memory cell structures |
US20080128674A1 (en) * | 2003-04-10 | 2008-06-05 | Campbell Kristy A | Differential negative resistance memory |
US20040202016A1 (en) * | 2003-04-10 | 2004-10-14 | Campbell Kristy A. | Differential negative resistance memory |
US7745808B2 (en) | 2003-04-10 | 2010-06-29 | Micron Technology, Inc. | Differential negative resistance memory |
US20050017233A1 (en) * | 2003-07-21 | 2005-01-27 | Campbell Kristy A. | Performance PCRAM cell |
US20050056910A1 (en) * | 2003-09-17 | 2005-03-17 | Gilton Terry L. | Non-volatile memory structure |
US20050219901A1 (en) * | 2003-09-17 | 2005-10-06 | Gilton Terry L | Non-volatile memory structure |
US7382646B2 (en) | 2003-12-03 | 2008-06-03 | Micron Technology, Inc. | Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements |
US7050319B2 (en) | 2003-12-03 | 2006-05-23 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
US20060126370A1 (en) * | 2003-12-03 | 2006-06-15 | Moore John T | Memory architecture and method of manufacture and operation thereof |
US7489551B2 (en) | 2003-12-03 | 2009-02-10 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
US20080225579A1 (en) * | 2003-12-03 | 2008-09-18 | Moore John T | Memory architecture and method of manufacture and operation thereof |
US7411812B2 (en) | 2003-12-03 | 2008-08-12 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
US7139188B2 (en) | 2003-12-03 | 2006-11-21 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
US20070091666A1 (en) * | 2003-12-03 | 2007-04-26 | Moore John T | Memory architecture and method of manufacture and operation thereof |
US20070008761A1 (en) * | 2003-12-03 | 2007-01-11 | Moore John T | Memory architecture and method of manufacture and operation thereof |
US20050122757A1 (en) * | 2003-12-03 | 2005-06-09 | Moore John T. | Memory architecture and method of manufacture and operation thereof |
US20050201174A1 (en) * | 2004-03-10 | 2005-09-15 | Klein Dean A. | Power management control and controlling memory refresh operations |
US20050202588A1 (en) * | 2004-03-10 | 2005-09-15 | Brooks Joseph F. | Method of forming a chalcogenide material containing device |
US8619485B2 (en) | 2004-03-10 | 2013-12-31 | Round Rock Research, Llc | Power management control and controlling memory refresh operations |
US20090147608A1 (en) * | 2004-03-10 | 2009-06-11 | Klein Dean A | Power management control and controlling memory refresh operations |
US9142263B2 (en) | 2004-03-10 | 2015-09-22 | Round Rock Research, Llc | Power management control and controlling memory refresh operations |
US20060246696A1 (en) * | 2004-03-10 | 2006-11-02 | Micron Technology, Inc. | Method of forming a chalcogenide material containing device |
US7749853B2 (en) | 2004-07-19 | 2010-07-06 | Microntechnology, Inc. | Method of forming a variable resistance memory device comprising tin selenide |
US20070138598A1 (en) * | 2004-07-19 | 2007-06-21 | Campbell Kristy A | Resistance variable memory device and method of fabrication |
US20060011910A1 (en) * | 2004-07-19 | 2006-01-19 | Micron Technology, Inc. | PCRAM device with switching glass layer |
US20070152204A1 (en) * | 2004-07-19 | 2007-07-05 | Campbell Kristy A | PCRAM device with switching glass layer |
US20060289851A1 (en) * | 2004-07-19 | 2006-12-28 | Campbell Kristy A | Resistance variable memory device and method of fabrication |
US20060012008A1 (en) * | 2004-07-19 | 2006-01-19 | Campbell Kristy A | Resistance variable memory device and method of fabrication |
US7759665B2 (en) | 2004-07-19 | 2010-07-20 | Micron Technology, Inc. | PCRAM device with switching glass layer |
US8487288B2 (en) | 2004-08-12 | 2013-07-16 | Micron Technology, Inc. | Memory device incorporating a resistance variable chalcogenide element |
US20060035403A1 (en) * | 2004-08-12 | 2006-02-16 | Campbell Kristy A | PCRAM device with switching glass layer |
US20070145463A1 (en) * | 2004-08-12 | 2007-06-28 | Campbell Kristy A | PCRAM device with switching glass layer |
US7924603B2 (en) | 2004-08-12 | 2011-04-12 | Micron Technology, Inc. | Resistance variable memory with temperature tolerant materials |
US8334186B2 (en) | 2004-08-12 | 2012-12-18 | Micron Technology, Inc. | Method of forming a memory device incorporating a resistance variable chalcogenide element |
US20060033094A1 (en) * | 2004-08-12 | 2006-02-16 | Campbell Kristy A | Resistance variable memory with temperature tolerant materials |
US8895401B2 (en) | 2004-08-12 | 2014-11-25 | Micron Technology, Inc. | Method of forming a memory device incorporating a resistance variable chalcogenide element |
US20060231824A1 (en) * | 2004-08-12 | 2006-10-19 | Campbell Kristy A | Resistance variable memory with temperature tolerant materials |
US7785976B2 (en) | 2004-08-12 | 2010-08-31 | Micron Technology, Inc. | Method of forming a memory device incorporating a resistance-variable chalcogenide element |
US7994491B2 (en) | 2004-08-12 | 2011-08-09 | Micron Technology, Inc. | PCRAM device with switching glass layer |
US20100133499A1 (en) * | 2004-08-12 | 2010-06-03 | Campbell Kristy A | Resistance variable memory with temperature tolerant materials |
US7682992B2 (en) | 2004-08-12 | 2010-03-23 | Micron Technology, Inc. | Resistance variable memory with temperature tolerant materials |
US20060044906A1 (en) * | 2004-09-01 | 2006-03-02 | Ethan Williford | Sensing of resistance variable memory devices |
US20060285381A1 (en) * | 2004-09-01 | 2006-12-21 | Ethan Williford | Sensing of resistance variable memory devices |
US20070166983A1 (en) * | 2004-12-22 | 2007-07-19 | Micron Technology, Inc. | Small electrode for resistance variable devices |
US20080093589A1 (en) * | 2004-12-22 | 2008-04-24 | Micron Technology, Inc. | Resistance variable devices with controllable channels |
US20060131555A1 (en) * | 2004-12-22 | 2006-06-22 | Micron Technology, Inc. | Resistance variable devices with controllable channels |
US20060131556A1 (en) * | 2004-12-22 | 2006-06-22 | Micron Technology, Inc. | Small electrode for resistance variable devices |
US7910397B2 (en) | 2004-12-22 | 2011-03-22 | Micron Technology, Inc. | Small electrode for resistance variable devices |
US8101936B2 (en) | 2005-02-23 | 2012-01-24 | Micron Technology, Inc. | SnSe-based limited reprogrammable cell |
US20100171091A1 (en) * | 2005-04-22 | 2010-07-08 | Jon Daley | Memory array for increased bit density and method of forming the same |
US7968927B2 (en) | 2005-04-22 | 2011-06-28 | Micron Technology, Inc. | Memory array for increased bit density and method of forming the same |
US7663133B2 (en) | 2005-04-22 | 2010-02-16 | Micron Technology, Inc. | Memory elements having patterned electrodes and method of forming the same |
US20070059882A1 (en) * | 2005-04-22 | 2007-03-15 | Micron Technology, Inc. | Memory elements having patterned electrodes and method of forming the same |
US7700422B2 (en) | 2005-04-22 | 2010-04-20 | Micron Technology, Inc. | Methods of forming memory arrays for increased bit density |
US7709289B2 (en) | 2005-04-22 | 2010-05-04 | Micron Technology, Inc. | Memory elements having patterned electrodes and method of forming the same |
US20060237707A1 (en) * | 2005-04-22 | 2006-10-26 | Micron Technology, Inc. | Memory array for increased bit density and method of forming the same |
US20070104010A1 (en) * | 2005-05-16 | 2007-05-10 | Micron Technology, Inc. | Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory |
US20060256640A1 (en) * | 2005-05-16 | 2006-11-16 | Micron Technology, Inc. | Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory |
US20080310208A1 (en) * | 2005-07-08 | 2008-12-18 | Jon Daley | Process for erasing chalcogenide variable resistance memory bits |
US20070008768A1 (en) * | 2005-07-08 | 2007-01-11 | Micron Technology, Inc. | Process for erasing chalcogenide variable resistance memory bits |
US20090078925A1 (en) * | 2005-08-01 | 2009-03-26 | Campbell Kristy A | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US20070023744A1 (en) * | 2005-08-01 | 2007-02-01 | Micron Technology, Inc. | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US20100171088A1 (en) * | 2005-08-01 | 2010-07-08 | Campbell Kristy A | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US7940556B2 (en) | 2005-08-01 | 2011-05-10 | Micron Technology, Inc. | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US7701760B2 (en) | 2005-08-01 | 2010-04-20 | Micron Technology, Inc. | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US7663137B2 (en) | 2005-08-02 | 2010-02-16 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US20070030554A1 (en) * | 2005-08-02 | 2007-02-08 | Micron Technology, Inc. | Method and apparatus for providing color changing thin film material |
US20070029537A1 (en) * | 2005-08-02 | 2007-02-08 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US20080142773A1 (en) * | 2005-08-02 | 2008-06-19 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US20070034921A1 (en) * | 2005-08-09 | 2007-02-15 | Micron Technology, Inc. | Access transistor for memory device |
US7709885B2 (en) | 2005-08-09 | 2010-05-04 | Micron Technology, Inc. | Access transistor for memory device |
US8652903B2 (en) | 2005-08-09 | 2014-02-18 | Micron Technology, Inc. | Access transistor for memory device |
US20070037316A1 (en) * | 2005-08-09 | 2007-02-15 | Micron Technology, Inc. | Memory cell contact using spacers |
US20100178741A1 (en) * | 2005-08-09 | 2010-07-15 | Jon Daley | Access transistor for memory device |
US20070090354A1 (en) * | 2005-08-11 | 2007-04-26 | Micron Technology, Inc. | Chalcogenide-based electrokinetic memory element and method of forming the same |
US20070035990A1 (en) * | 2005-08-15 | 2007-02-15 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US8189366B2 (en) | 2005-08-15 | 2012-05-29 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US7668000B2 (en) | 2005-08-15 | 2010-02-23 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US8611136B2 (en) | 2005-08-15 | 2013-12-17 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US20070247895A1 (en) * | 2005-08-15 | 2007-10-25 | Glen Hush | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US7978500B2 (en) | 2005-08-15 | 2011-07-12 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US20070047297A1 (en) * | 2005-08-31 | 2007-03-01 | Campbell Kristy A | Resistance variable memory element with threshold device and method of forming the same |
US20070064474A1 (en) * | 2005-08-31 | 2007-03-22 | Micron Technology, Inc. | Resistance variable memory element with threshold device and method of forming the same |
US20090261316A1 (en) * | 2006-08-29 | 2009-10-22 | Jun Liu | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US8030636B2 (en) | 2006-08-29 | 2011-10-04 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US7791058B2 (en) | 2006-08-29 | 2010-09-07 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US8467236B2 (en) | 2008-08-01 | 2013-06-18 | Boise State University | Continuously variable resistor |
US20110037558A1 (en) * | 2008-08-01 | 2011-02-17 | Boise State University | Continuously variable resistor |
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