US20010048151A1 - Stackable ball grid array semiconductor package and fabrication method thereof - Google Patents

Stackable ball grid array semiconductor package and fabrication method thereof Download PDF

Info

Publication number
US20010048151A1
US20010048151A1 US09/922,103 US92210301A US2001048151A1 US 20010048151 A1 US20010048151 A1 US 20010048151A1 US 92210301 A US92210301 A US 92210301A US 2001048151 A1 US2001048151 A1 US 2001048151A1
Authority
US
United States
Prior art keywords
conductive
chip
conductive traces
chip package
stackable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/922,103
Other versions
US6407448B2 (en
Inventor
Dong Chun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Priority to US09/922,103 priority Critical patent/US6407448B2/en
Publication of US20010048151A1 publication Critical patent/US20010048151A1/en
Application granted granted Critical
Publication of US6407448B2 publication Critical patent/US6407448B2/en
Assigned to HYNIX SEMICONDUCTOR INC. reassignment HYNIX SEMICONDUCTOR INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
Assigned to 658868 N.B. INC. reassignment 658868 N.B. INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HYNIX SEMICONDUCTOR INC.
Assigned to ROYAL BANK OF CANADA reassignment ROYAL BANK OF CANADA U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM Assignors: 658276 N.B. LTD., 658868 N.B. INC., MOSAID TECHNOLOGIES INCORPORATED
Assigned to CONVERSANT IP N.B. 868 INC. reassignment CONVERSANT IP N.B. 868 INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: 658868 N.B. INC.
Assigned to CONVERSANT IP N.B. 868 INC., CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC., CONVERSANT IP N.B. 276 INC. reassignment CONVERSANT IP N.B. 868 INC. RELEASE OF SECURITY INTEREST Assignors: ROYAL BANK OF CANADA
Assigned to CPPIB CREDIT INVESTMENTS INC., AS LENDER, ROYAL BANK OF CANADA, AS LENDER reassignment CPPIB CREDIT INVESTMENTS INC., AS LENDER U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Assignors: CONVERSANT IP N.B. 868 INC.
Assigned to CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. reassignment CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CONVERSANT IP N.B. 868 INC.
Assigned to CPPIB CREDIT INVESTMENTS, INC. reassignment CPPIB CREDIT INVESTMENTS, INC. AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Assignors: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Assigned to CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. reassignment CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Assignors: ROYAL BANK OF CANADA, AS LENDER
Anticipated expiration legal-status Critical
Assigned to CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. reassignment CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: CPPIB CREDIT INVESTMENTS INC.
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73219Layer and TAB connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1058Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the present invention relates to a stackable ball grid array (BGA) semiconductor package and a fabrication method thereof.
  • BGA ball grid array
  • solder balls which are attached to a substrate are used as external terminals.
  • a plurality of solder balls are attached to an upper or a lower surface of a substrate by the application of heat.
  • the solder balls which act as external terminals, are not easily bent or deformed by inpacts with solid objects.
  • FIG. 1 shows a structure of a background art BGA semiconductor package.
  • an elastomer 2 is attached to a center portion of an upper surface of a semiconductor chip 1 , and a high strength adhesive resin 3 is formed on the elastomer 2 .
  • a plurality of metal traces, which transmit electric signals, are formed on the adhesive resin 3 .
  • First ends 4 a of the metal traces extend across a top surface of the adhesive resin 3
  • second ends 4 b of each of the metal 5 traces are connected to chip pads 6 formed on a marginal portion of the upper surface of the semiconductor chip 1 .
  • a solder resist 5 covers the metal traces 4 a and the adhesive resin 3 , except for exposed portions of the first ends 4 a of the metal traces, onto which solder balls will be attached.
  • An encapsulant 7 such as a molding resin, covers the upper surface of the semiconductor chip 1 , and the portions of the metal 10 traces that are not covered with the solder resist 5 .
  • Conductive balls 8 are then attached to the exposed portions of the metal traces to serve as output terminals.
  • a stackable chip package embodying the invention includes a supporting member having a plurality of conductive patterns formed therein.
  • a plurality of first conductive traces are formed on a surface of the supporting member, and respective ones of the first conductive traces are coupled to corresponding ones of the conductive patterns.
  • a chip having chip pads is attached to a second surface of the supporting member, and a plurality of second conductive traces are arranged over the chip. Respective ones of the second conductive traces are electrically coupled to corresponding chip pads on the chip, and corresponding ones of the conductive patterns in the supporting member.
  • An embodiment of the invention could also include a solder resist that covers selected portions of the first and second conductive traces. The solder resist would leave connecting portions of the first and second conductive traces exposed.
  • Exterior leads in the form of conductive balls, could then be connected to the connecting portions of the first and second conductive traces.
  • a device embodying the invention could also include a molding resin that encapsulates portions of the conductive traces and the chip.
  • the supporting member could include a supporting plate and a supporting frame that surrounds the supporting plate.
  • a supporting member having a plurality of conductive patterns is first formed.
  • a plurality of first conductive traces are then formed on a first surface of the supporting member such that the conductive traces are electrically coupled to corresponding ones of the conductive patterns in the supporting member.
  • a plurality of second traces are then attached to a surface of a chip, and the chip is attached to a second surface of the supporting member. Respective ones of the second conductive traces are attached to corresponding chip pads on the chip, and to corresponding ones of the conductive patterns in the supporting member.
  • a method embodying the invention could also include the step of forming layers of solder resist over the first and second conductive traces, and removing portions of the solder resist to expose connecting portions of the first and second conductive traces.
  • a method embodying the invention could also include attaching leads, in the form of conductive balls, to respective ones of the exposed connecting portions of the first and second conductive traces.
  • FIG. 1 is a vertical cross-sectional diagram of a background art BGA semiconductor package
  • FIG. 2 is a vertical cross-sectional diagram of a stackable BGA semiconductor package according to a first embodiment of the present invention
  • FIG. 3 is a vertical cross-sectional diagram of a stackable BGA semiconductor package according to a second embodiment of the present invention.
  • FIG. 4 is a vertical cross-sectional diagram of stacked BGA semiconductor packages according to the present invention.
  • FIGS. 5A through 5H illustrate steps of a method of manufacturing a stackable BGA semiconductor package according to the present invention.
  • FIG. 2 illustrates a stackable BGA semiconductor package according to a first embodiment of the present invention.
  • a supporting member 21 includes a supporting plate 23 surrounded by a supporting frame 25 having a predetermined height.
  • Metal traces 24 a are attached to a lower surface of the supporting plate 23 .
  • a solder resist 27 covers portions of the metal traces 24 a and the supporting plate 23 to prevent short circuiting between solder balls and the metal traces, and to protect the metal traces 24 a from outside impacts.
  • the solder resist 27 is partially removed to expose portions of the metal traces 24 a .
  • the exposed portions of the metal traces 24 a act as connecting portions 24 b .
  • the connecting portions 24 b are used to electrically connect the metal traces 24 a to conductive balls that act as external terminals.
  • Metal patterns 26 are formed between upper and lower surfaces of the supporting frame 25 . One end of each of the metal patterns 26 is connected with an end of each of the metal traces 24 a . The other end of each of the metal patterns 26 is exposed at the upper surface of the supporting frame 25 .
  • a semiconductor chip 1 is attached by an adhesive onto the supporting plate 23 of the supporting member 21 .
  • An elastomer 2 is attached to a center portion of the upper surface of the semiconductor chip 1 , and a high strength adhesive resin 3 is formed on the elastomer 2 .
  • Metal traces which transmit electric signals are attached onto the adhesive resin 3 .
  • First ends 4 a of the metal traces extend over the top surface of the adhesive resin.
  • Middle portions 4 b of the metal traces are connected with chip pads 6 formed on a marginal portion of the upper surface of the semiconductor chip 1 .
  • Second ends 4 c of the metal traces are connected with upper surfaces of the metal patterns 26 formed in the supporting frame 25 .
  • a solder resist 5 covers the upper surface of the adhesive resin 3 and portions of the first ends 4 a of the metal traces. Conductive balls 8 a are attached to the exposed portions of the first ends 4 a of the metal traces.
  • An encapsulant 28 such as a molding resin, covers exposed portions of the upper surface of the semiconductor chip 1 , the metal traces, and the upper portion of the supporting frame 25 .
  • Electrical signals which are output by the semiconductor chip 1 through the chip pads 6 can be externally transmitted over the conductive balls 8 a connected with the first ends 4 a of the metal traces.
  • the electrical signals can also be externally transmitted through the connecting portions 24 b on the lower part of the supporting member 21 , which are connected to the second ends 4 c of the metal traces through the metal patterns 26 .
  • FIG. 3 is a vertical cross-sectional diagram of a stackable BGA semiconductor package according to a second embodiment of the present invention.
  • the second embodiment is the same as the embodiment shown in FIG. 2, except that conductive balls 8 b are also attached to the exposed portions 24 b , of the metal traces 24 a formed on the lower part of the supporting member 21 .
  • FIG. 4 illustrates stacked BGA semiconductor packages using the stackable BGA semiconductor package according to the first embodiment of the present invention shown in FIG. 2.
  • a plurality of stackable BGA semiconductor packages 100 , 110 , 120 , 130 are stacked.
  • Conductive balls 108 a which are formed on an upper surface of the first package 100 , connect the first ends 4 a of the metal traces on the first package 100 to the connecting portions 24 b formed on a lower surface of the second BGA semiconductor package 110 .
  • Conductive balls 118 a formed on an upper surface of the second package 110 connect the first ends 4 a of the metal traces on the second package 110 to the connecting portions 24 b on a lower surface of the third BGA semiconductor package 120 .
  • Conductive balls 128 a formed on an upper surface of the third package 120 connect the first ends 4 a of the metal traces on the third package 120 to the connecting portions 24 b on a lower surface of the fourth package 130 .
  • FIG. 4 illustrates four stacked BGA packages, but the actual number of stacked BGA packages may be variously adjusted by a user according to his requirements.
  • Conductive balls 138 a formed on the fourth package 130 can serve as external terminals which transmit signals from all the BGA packages to external circuits. For instance, the conductive balls 138 a could be connected to pads of a printed circuit board.
  • FIGS. 5 A- 5 H A method of fabricating a stackable BGA semiconductor chip package according to the present invention will now be described with reference to FIGS. 5 A- 5 H.
  • the supporting member 21 includes the supporting plate 23 and the supporting frame 25 .
  • Metal traces 24 a are formed on a lower surface of the supporting plate 23 .
  • the solder resist 27 covers portions of the metal traces 24 a , but leaves the connecting portions 24 b exposed.
  • the metal patterns 26 formed in the supporting frame 25 are exposed at the upper surface of the supporting frame 25 , and are connected with the metal traces 24 a on the bottom of the supporting plate 23 .
  • the semiconductor chip 1 which has chip pads 6 on a marginal portion of an upper surface thereof, is connected to a lower surface of an elastomer 2 .
  • a high strength adhesive 3 is attached to an upper surface of the elastomer 2 .
  • the metal traces are then attached to the upper surface of the adhesive 3 .
  • First end portions of each of the metal traces are attached to the adhesive 3 , and the other end portions thereof extend from outer sides of the adhesive 3 .
  • a layer of the solder resist 5 is formed on the metal traces and on the adhesive resin 3 .
  • the chip pads 6 formed on the semiconductor chip 1 are connected to the middle portions 4 b of the metal traces by pressing down the middle portions 4 b.
  • second ends 4 c of the metal traces are cut off by the bond tool 30 , and the second ends 4 c are connected with upper surfaces of the metal patterns 26 in the supporting frame 25 .
  • a molding resin 28 is molded over the package so that it covers the exposed portions of the metal traces and the exposed portions of the chip 1 and chip pads 6 .
  • portions of the solder resist 5 formed on the metal traces is removed to expose portions of the first ends 4 a of the metal traces that will be connected to conductive balls.
  • the conductive balls 8 a are then placed on the exposed portions of the first ends 4 a of the metal traces, and a reflow process is performed to attach the conductive balls 8 a to the metal traces.
  • One BGA package embodying the invention can be attached to a second BGA package embodying the invention by stacking the second package on the first package so that conductive balls on the first package align with corresponding connecting portions on a bottom surface of the second package, and then performing a reflow process to connect the two packages.
  • metal traces and a conductive region in a semiconductor may not be structural equivalents in that metal traces use metal as an electrical conductor, whereas the conductive region in a semiconductor relies on charge carriers in the material to provide electrical conductivity, in the environment of conducting electricity, metal traces and a conductive region of a semiconductor may be equivalent structures.

Abstract

A stackable Ball Grid Array (BGA) semiconductor chip package and a fabrication method thereof increases reliability and mount density of a semiconductor package. The stackable BGA semiconductor chip package includes a supporting member that includes a supporting plate and a supporting frame formed on edges of the supporting plate. Conductive patterns are formed in and extend through the supporting member. First metal traces are formed on a bottom of the supporting plate and the first metal traces are connected to first ends of the conductive patterns in the supporting member. Second metal traces are attached to an upper surface of a semiconductor chip, and the semiconductor chip is attached to the supporting member. The second metal traces are connected to bond pads of the chip, and to upper ends of the conductive patterns in the supporting member. A plurality of conductive balls are then attached to exposed portions of the first and/or the second metal traces.

Description

  • This application is a divisional of application Ser. No. 09/239,152, filed Jan. 28, 1999.[0001]
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • The present invention relates to a stackable ball grid array (BGA) semiconductor package and a fabrication method thereof. [0003]
  • 2. Background of the Related Art [0004]
  • Currently, there is an effort to produce a highly integrated semiconductor package having a large number of exterior connections. One example is a BGA semiconductor package in which a plurality of solder balls which are attached to a substrate are used as external terminals. In these BGA packages, a plurality of solder balls are attached to an upper or a lower surface of a substrate by the application of heat. The solder balls, which act as external terminals, are not easily bent or deformed by inpacts with solid objects. [0005]
  • FIG. 1 shows a structure of a background art BGA semiconductor package. As seen in FIG. 1, an [0006] elastomer 2 is attached to a center portion of an upper surface of a semiconductor chip 1, and a high strength adhesive resin 3 is formed on the elastomer 2. A plurality of metal traces, which transmit electric signals, are formed on the adhesive resin 3. First ends 4 a of the metal traces extend across a top surface of the adhesive resin 3, and second ends 4 b of each of the metal 5 traces are connected to chip pads 6 formed on a marginal portion of the upper surface of the semiconductor chip 1. A solder resist 5 covers the metal traces 4 a and the adhesive resin 3, except for exposed portions of the first ends 4 a of the metal traces, onto which solder balls will be attached. An encapsulant 7, such as a molding resin, covers the upper surface of the semiconductor chip 1, and the portions of the metal 10 traces that are not covered with the solder resist 5. Conductive balls 8 are then attached to the exposed portions of the metal traces to serve as output terminals.
  • Since the conductive balls are exposed on only one side of the package (in FIG. 1, the conductive balls are exposed at the upper surface thereof), it is impossible to fabricate a stackable package of high mount density. [0007]
  • SUMMARY OF THE INVENTION
  • It is an object of the present invention to provide a stackable BGA semiconductor package, and a fabrication method thereof, that maintain advantages of the conventional BGA package. [0008]
  • A stackable chip package embodying the invention includes a supporting member having a plurality of conductive patterns formed therein. A plurality of first conductive traces are formed on a surface of the supporting member, and respective ones of the first conductive traces are coupled to corresponding ones of the conductive patterns. A chip having chip pads is attached to a second surface of the supporting member, and a plurality of second conductive traces are arranged over the chip. Respective ones of the second conductive traces are electrically coupled to corresponding chip pads on the chip, and corresponding ones of the conductive patterns in the supporting member. An embodiment of the invention could also include a solder resist that covers selected portions of the first and second conductive traces. The solder resist would leave connecting portions of the first and second conductive traces exposed. Exterior leads, in the form of conductive balls, could then be connected to the connecting portions of the first and second conductive traces. A device embodying the invention could also include a molding resin that encapsulates portions of the conductive traces and the chip. The supporting member could include a supporting plate and a supporting frame that surrounds the supporting plate. [0009]
  • In a method embodying the invention, a supporting member having a plurality of conductive patterns is first formed. A plurality of first conductive traces are then formed on a first surface of the supporting member such that the conductive traces are electrically coupled to corresponding ones of the conductive patterns in the supporting member. A plurality of second traces are then attached to a surface of a chip, and the chip is attached to a second surface of the supporting member. Respective ones of the second conductive traces are attached to corresponding chip pads on the chip, and to corresponding ones of the conductive patterns in the supporting member. A method embodying the invention could also include the step of forming layers of solder resist over the first and second conductive traces, and removing portions of the solder resist to expose connecting portions of the first and second conductive traces. A method embodying the invention could also include attaching leads, in the form of conductive balls, to respective ones of the exposed connecting portions of the first and second conductive traces. [0010]
  • Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objects and advantages of the invention may be realized and attained as particularly pointed out in the appended claims.[0011]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawing figures, like elements are identified with like reference numerals, and: [0012]
  • FIG. 1 is a vertical cross-sectional diagram of a background art BGA semiconductor package; [0013]
  • FIG. 2 is a vertical cross-sectional diagram of a stackable BGA semiconductor package according to a first embodiment of the present invention; [0014]
  • FIG. 3 is a vertical cross-sectional diagram of a stackable BGA semiconductor package according to a second embodiment of the present invention; [0015]
  • FIG. 4 is a vertical cross-sectional diagram of stacked BGA semiconductor packages according to the present invention; and [0016]
  • FIGS. 5A through 5H illustrate steps of a method of manufacturing a stackable BGA semiconductor package according to the present invention.[0017]
  • DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • FIG. 2 illustrates a stackable BGA semiconductor package according to a first embodiment of the present invention. As shown in FIG. 2, a supporting [0018] member 21 includes a supporting plate 23 surrounded by a supporting frame 25 having a predetermined height. Metal traces 24 a are attached to a lower surface of the supporting plate 23. In addition, a solder resist 27 covers portions of the metal traces 24 a and the supporting plate 23 to prevent short circuiting between solder balls and the metal traces, and to protect the metal traces 24 a from outside impacts. The solder resist 27 is partially removed to expose portions of the metal traces 24 a. The exposed portions of the metal traces 24 a act as connecting portions 24 b. The connecting portions 24 b are used to electrically connect the metal traces 24 a to conductive balls that act as external terminals.
  • [0019] Metal patterns 26 are formed between upper and lower surfaces of the supporting frame 25. One end of each of the metal patterns 26 is connected with an end of each of the metal traces 24 a. The other end of each of the metal patterns 26 is exposed at the upper surface of the supporting frame 25.
  • A [0020] semiconductor chip 1 is attached by an adhesive onto the supporting plate 23 of the supporting member 21. An elastomer 2 is attached to a center portion of the upper surface of the semiconductor chip 1, and a high strength adhesive resin 3 is formed on the elastomer 2. Metal traces which transmit electric signals are attached onto the adhesive resin 3. First ends 4 a of the metal traces extend over the top surface of the adhesive resin. Middle portions 4 b of the metal traces are connected with chip pads 6 formed on a marginal portion of the upper surface of the semiconductor chip 1. Second ends 4 c of the metal traces are connected with upper surfaces of the metal patterns 26 formed in the supporting frame 25.
  • A solder resist [0021] 5 covers the upper surface of the adhesive resin 3 and portions of the first ends 4 a of the metal traces. Conductive balls 8 a are attached to the exposed portions of the first ends 4 a of the metal traces. An encapsulant 28, such as a molding resin, covers exposed portions of the upper surface of the semiconductor chip 1, the metal traces, and the upper portion of the supporting frame 25.
  • Electrical signals which are output by the [0022] semiconductor chip 1 through the chip pads 6 can be externally transmitted over the conductive balls 8 a connected with the first ends 4 a of the metal traces. The electrical signals can also be externally transmitted through the connecting portions 24 b on the lower part of the supporting member 21, which are connected to the second ends 4 c of the metal traces through the metal patterns 26.
  • FIG. 3 is a vertical cross-sectional diagram of a stackable BGA semiconductor package according to a second embodiment of the present invention. The second embodiment is the same as the embodiment shown in FIG. 2, except that [0023] conductive balls 8 b are also attached to the exposed portions 24 b, of the metal traces 24 a formed on the lower part of the supporting member 21.
  • With each of the embodiments shown in FIGS. 2 and 3, it becomes possible to stack a plurality of BGA semiconductor packages over a single mounting position on a printed circuit board. Thus, the density of the semiconductor devices on a circuit board can be increased by using BGA packages embodying the invention. [0024]
  • FIG. 4 illustrates stacked BGA semiconductor packages using the stackable BGA semiconductor package according to the first embodiment of the present invention shown in FIG. 2. As shown therein, a plurality of stackable BGA semiconductor packages [0025] 100, 110, 120, 130 are stacked. Conductive balls 108 a, which are formed on an upper surface of the first package 100, connect the first ends 4 a of the metal traces on the first package 100 to the connecting portions 24 b formed on a lower surface of the second BGA semiconductor package 110. Conductive balls 118 a formed on an upper surface of the second package 110 connect the first ends 4 a of the metal traces on the second package 110 to the connecting portions 24 b on a lower surface of the third BGA semiconductor package 120. Conductive balls 128 a formed on an upper surface of the third package 120 connect the first ends 4 a of the metal traces on the third package 120 to the connecting portions 24 b on a lower surface of the fourth package 130.
  • FIG. 4 illustrates four stacked BGA packages, but the actual number of stacked BGA packages may be variously adjusted by a user according to his requirements. [0026] Conductive balls 138 a formed on the fourth package 130 can serve as external terminals which transmit signals from all the BGA packages to external circuits. For instance, the conductive balls 138 a could be connected to pads of a printed circuit board.
  • A method of fabricating a stackable BGA semiconductor chip package according to the present invention will now be described with reference to FIGS. [0027] 5A-5H.
  • In FIG. 5A, first the supporting [0028] member 21 is provided. The supporting member 21, includes the supporting plate 23 and the supporting frame 25. Metal traces 24 a are formed on a lower surface of the supporting plate 23. The solder resist 27 covers portions of the metal traces 24 a, but leaves the connecting portions 24 b exposed. The metal patterns 26 formed in the supporting frame 25, are exposed at the upper surface of the supporting frame 25, and are connected with the metal traces 24 a on the bottom of the supporting plate 23.
  • As shown in FIG. 5B, the [0029] semiconductor chip 1, which has chip pads 6 on a marginal portion of an upper surface thereof, is connected to a lower surface of an elastomer 2. A high strength adhesive 3 is attached to an upper surface of the elastomer 2. The metal traces are then attached to the upper surface of the adhesive 3. First end portions of each of the metal traces are attached to the adhesive 3, and the other end portions thereof extend from outer sides of the adhesive 3. Next, a layer of the solder resist 5 is formed on the metal traces and on the adhesive resin 3.
  • Next, as shown in FIG. 5C, the semiconductor chip assembly shown in FIG. 5B is attached to the supporting [0030] member 21 shown in FIG. 5A.
  • In FIG. 5D, using a [0031] bond tool 30, the chip pads 6 formed on the semiconductor chip 1 are connected to the middle portions 4 b of the metal traces by pressing down the middle portions 4 b.
  • As shown in FIG. 5E, second ends [0032] 4 c of the metal traces are cut off by the bond tool 30, and the second ends 4 c are connected with upper surfaces of the metal patterns 26 in the supporting frame 25.
  • As shown in FIG. 5F and 5G, a [0033] molding resin 28 is molded over the package so that it covers the exposed portions of the metal traces and the exposed portions of the chip 1 and chip pads 6. Next, portions of the solder resist 5 formed on the metal traces is removed to expose portions of the first ends 4 a of the metal traces that will be connected to conductive balls.
  • As shown in FIG. 5G, the [0034] conductive balls 8 a are then placed on the exposed portions of the first ends 4 a of the metal traces, and a reflow process is performed to attach the conductive balls 8 a to the metal traces.
  • One BGA package embodying the invention can be attached to a second BGA package embodying the invention by stacking the second package on the first package so that conductive balls on the first package align with corresponding connecting portions on a bottom surface of the second package, and then performing a reflow process to connect the two packages. [0035]
  • The foregoing embodiments are merely exemplary and are not to be construed as limiting the present invention. The present teaching can be readily applied to other types of apparatuses. The description of the present invention is intended to be illustrative, and not to limit the scope of the claims. Many alternatives, modifications, and variations will be apparent to those skilled in the art. In the claims, means-plus-function clauses are intended to cover the structures described herein as performing the recited function and not only structural equivalents but also equivalent structures. For example, although metal traces and a conductive region in a semiconductor may not be structural equivalents in that metal traces use metal as an electrical conductor, whereas the conductive region in a semiconductor relies on charge carriers in the material to provide electrical conductivity, in the environment of conducting electricity, metal traces and a conductive region of a semiconductor may be equivalent structures. [0036]

Claims (26)

What is claimed is:
1. A stackable chip package, comprising:
a supporting member having a plurality of conductive patterns formed therein;
a plurality of first conductive traces formed on a first surface of the supporting member, wherein respective ones first conductive traces are electrically coupled to corresponding ones of the conductive patterns;
a chip having chip pads, wherein the chip is attached to a second surface of the supporting member; and
a plurality of second conductive traces, wherein portions of the second conductive traces are arranged over the chip, and wherein respective ones of the second conductive traces are electrically coupled to corresponding ones of the chip pads and corresponding ones of the conductive patterns.
2. The stackable chip package of
claim 1
, wherein first ends of the second conductive traces are arranged over the chip, wherein middle portions of respective ones of the second conductive traces are electrically coupled to corresponding chip pads, and wherein second ends of respective ones of the second conductive traces are electrically coupled to corresponding ones of the conductive patterns.
3. The stackable chip package of
claim 1
, further comprising a solder resist covering portions of the plurality of first conductive traces, wherein the solder resist leaves connecting portions of the first conductive traces exposed.
4. The stackable chip package of
claim 3
, further comprising a plurality of conductive members, wherein respective ones of the conductive members are electrically coupled to corresponding ones of the connecting portions of the first conductive traces, and wherein the plurality of conductive members act as leads of the chip package.
5. The stackable chip package of
claim 1
, further comprising a solder resist covering portions of the plurality of second conductive traces, wherein the solder resist leaves connecting portions of the second conductive traces exposed.
6. The stackable chip package of
claim 5
, further comprising a plurality of conductive members, wherein respective ones of the conductive members are electrically coupled to corresponding ones of the connecting portions of the second conductive traces, and wherein the plurality of conductive members act as leads of the chip package.
7. The stackable chip package of
claim 6
, wherein the plurality of conductive members are arranged in an array over the chip.
8. The stackable chip package of
claim 1
, further comprising a molding resin that covers portions of the second conductive traces, and portions of the chip.
9. The stackable chip package of
claim 1
, wherein the supporting member comprises a supporting plate and a supporting frame formed at peripheral portions of the supporting plate.
10. The stackable chip package of
claim 9
, wherein the plurality of conductive patterns are formed in the supporting frame.
11. The stackable chip package of
claim 1
, further comprising an elastomer that attaches the plurality of second conductive traces to the chip.
12. The stackable chip package of
claim 11
, wherein an adhesive is interposed between the second conductive traces and the elastomer.
13. The stackable chip package of
claim 1
, wherein the plurality of first conductive traces are arranged on the first surface of the supporting member in substantially the same pattern as the plurality of second conductive traces are arranged over the chip.
14. A stackable chip package, comprising:
a supporting member having a plurality of conductive patterns formed therein;
a chip having chip pads, wherein the chip is attached to a upper surface of the supporting member;
a plurality of first conductive traces, wherein a first end of each first conductive trace is electrically coupled to a corresponding conductive pattern and a second end of each first conductive trace terminates below said chip;
a plurality of second conductive traces, wherein a first end of each second conductive trace terminates above said chip, a middle portion of each second conductive trace is electrically coupled to a corresponding chip pad, and a second end of each second conductive trace is electrically coupled to a corresponding conductive pattern.
15. The stackable chip package of
claim 14
, wherein said plurality of first conductive traces is formed on a lower surface of said supporting member.
16. The stackable chip package of
claim 14
, further comprising a solder resist covering portions of the plurality of first conductive traces, wherein the solder resist leaves connecting portions of the first conductive traces exposed.
17. The stackable chip package of
claim 16
, further comprising a plurality of conductive members, wherein respective ones of the conductive members are electrically coupled to corresponding ones of the connecting portions of the first conductive traces, and wherein the plurality of conductive members act as leads of the chip package.
18. The stackable chip package of
claim 14
, further comprising a solder resist covering portions of the plurality of second conductive traces, wherein the solder resist leaves connecting portions of the second conductive traces exposed.
19. The stackable chip package of
claim 18
, further comprising a plurality of conductive members, wherein respective ones of the conductive members are electrically coupled to corresponding ones of the connecting portions of the second conductive traces, and wherein the plurality of conductive members act as leads of the chip package.
20. The stackable chip package of
claim 19
, wherein the plurality of conductive members are arranged in an array over the chip.
21. The stackable chip package of
claim 14
, further comprising a molding resin that covers portions of the second conductive traces, and portions of the chip.
22. The stackable chip package of
claim 14
, wherein the supporting member comprises a supporting plate and supporting frame formed at peripheral portions of the supporting plate.
23. The stackable chip package of
claim 22
, wherein the plurality of conductive patterns are formed in the supporting frame.
24. The stackable chip package of
claim 14
, further comprising an elastomer that attaches the plurality of second conductive traces to the chip.
25. The stackable chip package of
claim 24
, wherein an adhesive is interposed between the second conductive traces and the elastomer.
26. The stackable chip package of
claim 14
, wherein the plurality of first conductive traces are arranged on the lower surface of the supporting member in substantially the same pattern as the plurality of second conductive traces are arranged over the chip.
US09/922,103 1998-05-30 2001-08-06 Stackable ball grid array semiconductor package and fabrication method thereof Expired - Lifetime US6407448B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/922,103 US6407448B2 (en) 1998-05-30 2001-08-06 Stackable ball grid array semiconductor package and fabrication method thereof

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1019980020098A KR100266693B1 (en) 1998-05-30 1998-05-30 Stackable ball grid array semiconductor package and fabrication method thereof
KR98-20098U 1998-05-30
KR20098/1998 1998-05-30
US09/239,152 US6291259B1 (en) 1998-05-30 1999-01-28 Stackable ball grid array semiconductor package and fabrication method thereof
US09/922,103 US6407448B2 (en) 1998-05-30 2001-08-06 Stackable ball grid array semiconductor package and fabrication method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/239,152 Division US6291259B1 (en) 1998-05-30 1999-01-28 Stackable ball grid array semiconductor package and fabrication method thereof

Publications (2)

Publication Number Publication Date
US20010048151A1 true US20010048151A1 (en) 2001-12-06
US6407448B2 US6407448B2 (en) 2002-06-18

Family

ID=19537977

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/239,152 Expired - Lifetime US6291259B1 (en) 1998-05-30 1999-01-28 Stackable ball grid array semiconductor package and fabrication method thereof
US09/922,103 Expired - Lifetime US6407448B2 (en) 1998-05-30 2001-08-06 Stackable ball grid array semiconductor package and fabrication method thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/239,152 Expired - Lifetime US6291259B1 (en) 1998-05-30 1999-01-28 Stackable ball grid array semiconductor package and fabrication method thereof

Country Status (4)

Country Link
US (2) US6291259B1 (en)
JP (1) JP3063032B2 (en)
KR (1) KR100266693B1 (en)
DE (1) DE19845316C2 (en)

Cited By (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026556A1 (en) * 2001-08-03 2003-02-06 National Semiconductor Corporation Optical sub-assembly for optoelectronic modules
US20030030143A1 (en) * 2001-08-10 2003-02-13 Ingo Wennemuth Electronic component with stacked electronic elements and method for fabricating an electronic component
US20030057535A1 (en) * 2001-09-24 2003-03-27 National Semiconductor Corporation Techniques for attaching rotated photonic devices to an optical sub-assembly in an optoelectronic package
US20030141583A1 (en) * 2002-01-31 2003-07-31 Yang Chaur-Chin Stacked package
US6624507B1 (en) * 2000-05-09 2003-09-23 National Semiconductor Corporation Miniature semiconductor package for opto-electronic devices
US20030189214A1 (en) * 2000-05-09 2003-10-09 National Semiconductor Corporation, A Delaware Corp. Techniques for joining an opto-electronic module to a semiconductor package
US20050013581A1 (en) * 2003-07-15 2005-01-20 National Semiconductor Corporation Multi-purpose optical light pipe
US20050013560A1 (en) * 2003-07-15 2005-01-20 National Semiconductor Corporation Opto-electronic module form factor having adjustable optical plane height
US20060046436A1 (en) * 2000-09-11 2006-03-02 Shinji Ohuchi Manufacturing method of stack-type semiconductor device
US7023705B2 (en) 2001-08-03 2006-04-04 National Semiconductor Corporation Ceramic optical sub-assembly for optoelectronic modules
US20060140534A1 (en) * 2001-08-03 2006-06-29 National Semiconductor Corporation Ceramic optical sub-assembly for optoelectronic modules
US20060278968A1 (en) * 2005-06-13 2006-12-14 Shinko Electric Industries Co., Ltd. Laminated semiconductor package
KR100658734B1 (en) 2004-11-11 2006-12-19 주식회사 유니세미콘 A stack semiconductor package and its manufacture method
US20070015314A1 (en) * 2004-05-24 2007-01-18 Chippac, Inc Adhesive/Spacer Island Structure for Multiple Die Package
US20080083976A1 (en) * 2006-10-10 2008-04-10 Tessera, Inc. Edge connect wafer level stacking
EP1916713A2 (en) * 2006-10-27 2008-04-30 Shinko Electric Industries Co., Ltd. Semiconductor package and stacked layer type semiconductor package formed with it
US20080203552A1 (en) * 2005-02-15 2008-08-28 Unisemicon Co., Ltd. Stacked Package and Method of Fabricating the Same
US20090039528A1 (en) * 2007-08-09 2009-02-12 Tessera, Inc. Wafer level stacked packages with individual chip selection
US20090316378A1 (en) * 2008-06-16 2009-12-24 Tessera Research Llc Wafer level edge stacking
US20100230795A1 (en) * 2009-03-13 2010-09-16 Tessera Technologies Hungary Kft. Stacked microelectronic assemblies having vias extending through bond pads
US20110006432A1 (en) * 2007-07-27 2011-01-13 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
US20110031629A1 (en) * 2006-10-10 2011-02-10 Tessera, Inc. Edge connect wafer level stacking
US20110049696A1 (en) * 2006-10-10 2011-03-03 Tessera, Inc. Off-chip vias in stacked chips
GB2477291A (en) * 2010-01-27 2011-08-03 Thales Holdings Uk Plc Microwave circuit package
US8101459B2 (en) 2001-08-24 2012-01-24 Micron Technology, Inc. Methods for assembling semiconductor devices in stacked arrangements by positioning spacers therebetween
US20120119380A1 (en) * 2010-11-15 2012-05-17 Tessera, Inc. Microelectronic package with terminals on dielectric mass
US8551815B2 (en) 2007-08-03 2013-10-08 Tessera, Inc. Stack packages using reconstituted wafers
US8697457B1 (en) 2011-06-22 2014-04-15 Bae Systems Information And Electronic Systems Integration Inc. Devices and methods for stacking individually tested devices to form multi-chip electronic modules
US9041227B2 (en) 2011-10-17 2015-05-26 Invensas Corporation Package-on-package assembly with wire bond vias
US9095074B2 (en) 2012-12-20 2015-07-28 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9123664B2 (en) 2010-07-19 2015-09-01 Tessera, Inc. Stackable molded microelectronic packages
US9153562B2 (en) 2004-11-03 2015-10-06 Tessera, Inc. Stacked packaging improvements
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US9218988B2 (en) 2005-12-23 2015-12-22 Tessera, Inc. Microelectronic packages and methods therefor
US9224717B2 (en) 2011-05-03 2015-12-29 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
US9324681B2 (en) 2010-12-13 2016-04-26 Tessera, Inc. Pin attachment
US9349706B2 (en) 2012-02-24 2016-05-24 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US9601454B2 (en) 2013-02-01 2017-03-21 Invensas Corporation Method of forming a component having wire bonds and a stiffening layer
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US9691679B2 (en) 2012-02-24 2017-06-27 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9728527B2 (en) 2013-11-22 2017-08-08 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9852969B2 (en) 2013-11-22 2017-12-26 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US10008477B2 (en) 2013-09-16 2018-06-26 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US10026717B2 (en) 2013-11-22 2018-07-17 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10460958B2 (en) 2013-08-07 2019-10-29 Invensas Corporation Method of manufacturing embedded packaging with preformed vias
US20210111132A1 (en) * 2018-02-15 2021-04-15 Micron Technology, Inc. Method for Substrate Moisture NCF Voiding Elimination

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
KR100318293B1 (en) * 1999-11-02 2001-12-24 김 무 Flip chip semiconductor package and manufacturing method thereof
KR100324333B1 (en) 2000-01-04 2002-02-16 박종섭 Stacked package and fabricating method thereof
KR100386081B1 (en) * 2000-01-05 2003-06-09 주식회사 하이닉스반도체 Semiconductor package and fabricating method thereof
JP3813402B2 (en) * 2000-01-31 2006-08-23 新光電気工業株式会社 Manufacturing method of semiconductor device
KR100639700B1 (en) * 2000-02-14 2006-10-31 삼성전자주식회사 Chip scale stack chip package
JP2001250907A (en) * 2000-03-08 2001-09-14 Toshiba Corp Semiconductor device and method of manufacturing the same
US6545868B1 (en) * 2000-03-13 2003-04-08 Legacy Electronics, Inc. Electronic module having canopy-type carriers
US6713854B1 (en) 2000-10-16 2004-03-30 Legacy Electronics, Inc Electronic circuit module with a carrier having a mounting pad array
US7102892B2 (en) 2000-03-13 2006-09-05 Legacy Electronics, Inc. Modular integrated circuit chip carrier
JP3822043B2 (en) * 2000-09-25 2006-09-13 太陽誘電株式会社 Chip part assembly manufacturing method
US7337522B2 (en) * 2000-10-16 2008-03-04 Legacy Electronics, Inc. Method and apparatus for fabricating a circuit board with a three dimensional surface mounted array of semiconductor chips
KR100375168B1 (en) * 2000-11-02 2003-03-08 앰코 테크놀로지 코리아 주식회사 Semiconductor package and method for manufacturing the same
EP1356718A4 (en) 2000-12-21 2009-12-02 Tessera Tech Hungary Kft Packaged integrated circuits and methods of producing thereof
US6885106B1 (en) 2001-01-11 2005-04-26 Tessera, Inc. Stacked microelectronic assemblies and methods of making same
JP4586273B2 (en) * 2001-01-15 2010-11-24 ソニー株式会社 Semiconductor device structure
EP1378152A4 (en) * 2001-03-14 2006-02-01 Legacy Electronics Inc A method and apparatus for fabricating a circuit board with a three dimensional surface mounted array of semiconductor chips
DE10120408B4 (en) * 2001-04-25 2006-02-02 Infineon Technologies Ag Electronic component with a semiconductor chip, electronic assembly of stacked semiconductor chips and method for their production
JP3999945B2 (en) * 2001-05-18 2007-10-31 株式会社東芝 Manufacturing method of semiconductor device
US6548759B1 (en) 2001-06-28 2003-04-15 Amkor Technology, Inc. Pre-drilled image sensor package
US6730536B1 (en) 2001-06-28 2004-05-04 Amkor Technology, Inc. Pre-drilled image sensor package fabrication method
US6486545B1 (en) * 2001-07-26 2002-11-26 Amkor Technology, Inc. Pre-drilled ball grid array package
US20030048624A1 (en) * 2001-08-22 2003-03-13 Tessera, Inc. Low-height multi-component assemblies
DE10147376B4 (en) * 2001-09-26 2009-01-15 Infineon Technologies Ag Electronic component and leadframe and method for producing the same
US6897565B2 (en) * 2001-10-09 2005-05-24 Tessera, Inc. Stacked packages
KR100980356B1 (en) * 2002-02-26 2010-09-06 레가시 일렉트로닉스, 인크. Modular integrated circuit chip carrier
WO2004017399A1 (en) * 2002-08-16 2004-02-26 Tessera, Inc. Microelectronic packages with self-aligning features
DE10239866B3 (en) * 2002-08-29 2004-04-08 Infineon Technologies Ag Production of a semiconductor component used in circuit boards comprises forming electrical contact surfaces together within a smaller contacting region as the whole surface of the front side of the chip and further processing
US7294928B2 (en) * 2002-09-06 2007-11-13 Tessera, Inc. Components, methods and assemblies for stacked packages
US7071547B2 (en) * 2002-09-11 2006-07-04 Tessera, Inc. Assemblies having stacked semiconductor chips and methods of making same
KR20040026530A (en) * 2002-09-25 2004-03-31 삼성전자주식회사 Semiconductor package and stack package using the same
WO2004034434A2 (en) * 2002-10-11 2004-04-22 Tessera, Inc. Components, methods and assemblies for multi-chip packages
US7208825B2 (en) * 2003-01-22 2007-04-24 Siliconware Precision Industries Co., Ltd. Stacked semiconductor packages
KR100604821B1 (en) * 2003-06-30 2006-07-26 삼성전자주식회사 Stack type Ball grid array package and method for manufacturing the same
US20050017337A1 (en) * 2003-07-21 2005-01-27 Cherng-Chiao Wu Stacking apparatus for integrated circuit assembly
KR100546374B1 (en) * 2003-08-28 2006-01-26 삼성전자주식회사 Multi chip package having center pads and method for manufacturing the same
US7061121B2 (en) 2003-11-12 2006-06-13 Tessera, Inc. Stacked microelectronic assemblies with central contacts
DE102004010614B4 (en) * 2004-03-02 2006-12-14 Infineon Technologies Ag A base semiconductor device for a semiconductor component stack and method of making the same
DE102004027788A1 (en) * 2004-06-08 2006-01-05 Infineon Technologies Ag Semiconductor base component for semiconductor component pile, has boundary regions of substrate surrounding chip, with elastic contact unit which is electrically connected with regions of distribution plate
DE102004036909B4 (en) 2004-07-29 2007-04-05 Infineon Technologies Ag A semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack, and a method of manufacturing the same
KR100626618B1 (en) * 2004-12-10 2006-09-25 삼성전자주식회사 Semiconductor chip stack package and related fabrication method
JP4444088B2 (en) * 2004-12-10 2010-03-31 新光電気工業株式会社 Semiconductor device
WO2006076381A2 (en) * 2005-01-12 2006-07-20 Legacy Electronics, Inc. Radial circuit board, system, and methods
US20070141751A1 (en) * 2005-12-16 2007-06-21 Mistry Addi B Stackable molded packages and methods of making the same
DE102006024147B3 (en) * 2006-05-22 2007-11-29 Infineon Technologies Ag An electronic module including a semiconductor device package and a semiconductor chip and method of making the same
US7615409B2 (en) * 2006-06-29 2009-11-10 Sandisk Corporation Method of stacking and interconnecting semiconductor packages via electrical connectors extending between adjoining semiconductor packages
US7550834B2 (en) * 2006-06-29 2009-06-23 Sandisk Corporation Stacked, interconnected semiconductor packages
SG139573A1 (en) * 2006-07-17 2008-02-29 Micron Technology Inc Microelectronic packages with leadframes, including leadframes configured for stacked die packages, and associated systems and methods
US7928582B2 (en) * 2007-03-09 2011-04-19 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
US8188586B2 (en) * 2007-11-01 2012-05-29 Stats Chippac Ltd. Mountable integrated circuit package system with mounting interconnects
US20090152740A1 (en) * 2007-12-17 2009-06-18 Soo-San Park Integrated circuit package system with flip chip
US8120186B2 (en) 2008-02-15 2012-02-21 Qimonda Ag Integrated circuit and method
US7919871B2 (en) * 2008-03-21 2011-04-05 Stats Chippac Ltd. Integrated circuit package system for stackable devices
US7859094B2 (en) * 2008-09-25 2010-12-28 Stats Chippac Ltd. Integrated circuit package system for stackable devices
US8458477B2 (en) * 2008-12-01 2013-06-04 Novell, Inc. Communication with non-repudiation
KR101534680B1 (en) * 2009-02-23 2015-07-07 삼성전자주식회사 Stack type semiconductor package
JP2010212273A (en) * 2009-03-06 2010-09-24 Elpida Memory Inc Semiconductor package substrate, semiconductor package using the substrate, and method of manufacturing semiconductor package substrate
US20100244212A1 (en) * 2009-03-27 2010-09-30 Jong-Woo Ha Integrated circuit packaging system with post type interconnector and method of manufacture thereof
US8236610B2 (en) * 2009-05-26 2012-08-07 International Business Machines Corporation Forming semiconductor chip connections
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
US8409923B2 (en) * 2011-06-15 2013-04-02 Stats Chippac Ltd. Integrated circuit packaging system with underfill and method of manufacture thereof
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US8975738B2 (en) 2012-11-12 2015-03-10 Invensas Corporation Structure for microelectronic packaging with terminals on dielectric mass
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US8883563B1 (en) 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US9034696B2 (en) 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
US9087815B2 (en) 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
JP2016092292A (en) * 2014-11-07 2016-05-23 イビデン株式会社 Wiring board, and method of manufacturing the same
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US10043779B2 (en) 2015-11-17 2018-08-07 Invensas Corporation Packaged microelectronic device for a package-on-package device
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
CN205944139U (en) 2016-03-30 2017-02-08 首尔伟傲世有限公司 Ultraviolet ray light -emitting diode spare and contain this emitting diode module
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US9917041B1 (en) * 2016-10-28 2018-03-13 Intel Corporation 3D chip assemblies using stacked leadframes
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045921A (en) * 1989-12-26 1991-09-03 Motorola, Inc. Pad array carrier IC device using flexible tape
US5172303A (en) * 1990-11-23 1992-12-15 Motorola, Inc. Electronic component assembly
US5477611A (en) * 1993-09-20 1995-12-26 Tessera, Inc. Method of forming interface between die and chip carrier
US5454160A (en) * 1993-12-03 1995-10-03 Ncr Corporation Apparatus and method for stacking integrated circuit devices
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
KR950027550U (en) * 1994-03-07 1995-10-18 정의훈 Left side of the inclined guide of the cloth guide. Right feeder
US5776796A (en) * 1994-05-19 1998-07-07 Tessera, Inc. Method of encapsulating a semiconductor package
JP2531382B2 (en) * 1994-05-26 1996-09-04 日本電気株式会社 Ball grid array semiconductor device and manufacturing method thereof
JP2780649B2 (en) * 1994-09-30 1998-07-30 日本電気株式会社 Semiconductor device
US5783870A (en) * 1995-03-16 1998-07-21 National Semiconductor Corporation Method for connecting packages of a stacked ball grid array structure
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
US5821456A (en) * 1996-05-01 1998-10-13 Motorola, Inc. Microelectronic assembly including a decomposable encapsulant, and method for forming and reworking same
JPH09321169A (en) * 1996-05-24 1997-12-12 Toray Ind Inc Semiconductor package, semiconductor package circuit board, and semiconductor package member
US6054337A (en) * 1996-12-13 2000-04-25 Tessera, Inc. Method of making a compliant multichip package
KR100214549B1 (en) * 1996-12-30 1999-08-02 구본준 Buttom lead package
US5994166A (en) * 1997-03-10 1999-11-30 Micron Technology, Inc. Method of constructing stacked packages
US6117705A (en) * 1997-04-18 2000-09-12 Amkor Technology, Inc. Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate
US6020637A (en) * 1997-05-07 2000-02-01 Signetics Kp Co., Ltd. Ball grid array semiconductor package
US5950072A (en) * 1997-07-25 1999-09-07 Stmicroelectronics, Inc. Low-profile removable ball-grid-array integrated circuit package
KR100266637B1 (en) * 1997-11-15 2000-09-15 김영환 Stackable ball grid array semiconductor package and a method thereof
US6051890A (en) * 1997-12-24 2000-04-18 Intel Corporation Interleaving a bondwire between two bondwires coupled to a same terminal
US6020633A (en) * 1998-03-24 2000-02-01 Xilinx, Inc. Integrated circuit packaged for receiving another integrated circuit
US6028365A (en) * 1998-03-30 2000-02-22 Micron Technology, Inc. Integrated circuit package and method of fabrication
US6072233A (en) * 1998-05-04 2000-06-06 Micron Technology, Inc. Stackable ball grid array package
US6180881B1 (en) * 1998-05-05 2001-01-30 Harlan Ruben Isaak Chip stack and method of making same
US5977640A (en) * 1998-06-26 1999-11-02 International Business Machines Corporation Highly integrated chip-on-chip packaging
US6313522B1 (en) * 1998-08-28 2001-11-06 Micron Technology, Inc. Semiconductor structure having stacked semiconductor devices

Cited By (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642613B1 (en) * 2000-05-09 2003-11-04 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US7247942B2 (en) 2000-05-09 2007-07-24 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US7199440B2 (en) 2000-05-09 2007-04-03 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US6624507B1 (en) * 2000-05-09 2003-09-23 National Semiconductor Corporation Miniature semiconductor package for opto-electronic devices
US20030189214A1 (en) * 2000-05-09 2003-10-09 National Semiconductor Corporation, A Delaware Corp. Techniques for joining an opto-electronic module to a semiconductor package
US20050100294A1 (en) * 2000-05-09 2005-05-12 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US20040048417A1 (en) * 2000-05-09 2004-03-11 National Semiconductor Corporation, A Delaware Corp. Techniques for joining an opto-electronic module to a semiconductor package
US6838317B2 (en) 2000-05-09 2005-01-04 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US20050117835A1 (en) * 2000-05-09 2005-06-02 National Semiconductor Corporation, A Delaware Corp. Techniques for joining an opto-electronic module to a semiconductor package
US6858468B2 (en) 2000-05-09 2005-02-22 National Semiconductor Corporation Techniques for joining an opto-electronic module to a semiconductor package
US7405138B2 (en) 2000-09-11 2008-07-29 Oki Electric Industry Co., Ltd. Manufacturing method of stack-type semiconductor device
US7019397B2 (en) * 2000-09-11 2006-03-28 Oki Electric Industry Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, stack type semiconductor device, and manufacturing method of stack type semiconductor device
US20060046436A1 (en) * 2000-09-11 2006-03-02 Shinji Ohuchi Manufacturing method of stack-type semiconductor device
US7269027B2 (en) 2001-08-03 2007-09-11 National Semiconductor Corporation Ceramic optical sub-assembly for optoelectronic modules
US6916121B2 (en) 2001-08-03 2005-07-12 National Semiconductor Corporation Optical sub-assembly for optoelectronic modules
US20030026556A1 (en) * 2001-08-03 2003-02-06 National Semiconductor Corporation Optical sub-assembly for optoelectronic modules
US7023705B2 (en) 2001-08-03 2006-04-04 National Semiconductor Corporation Ceramic optical sub-assembly for optoelectronic modules
US20060140534A1 (en) * 2001-08-03 2006-06-29 National Semiconductor Corporation Ceramic optical sub-assembly for optoelectronic modules
US7086788B2 (en) 2001-08-03 2006-08-08 National Semiconductor Corporation Optical sub-assembly for opto-electronic modules
US20030030143A1 (en) * 2001-08-10 2003-02-13 Ingo Wennemuth Electronic component with stacked electronic elements and method for fabricating an electronic component
US8101459B2 (en) 2001-08-24 2012-01-24 Micron Technology, Inc. Methods for assembling semiconductor devices in stacked arrangements by positioning spacers therebetween
US6973225B2 (en) 2001-09-24 2005-12-06 National Semiconductor Corporation Techniques for attaching rotated photonic devices to an optical sub-assembly in an optoelectronic package
US20030057535A1 (en) * 2001-09-24 2003-03-27 National Semiconductor Corporation Techniques for attaching rotated photonic devices to an optical sub-assembly in an optoelectronic package
US20030141583A1 (en) * 2002-01-31 2003-07-31 Yang Chaur-Chin Stacked package
US6717253B2 (en) * 2002-01-31 2004-04-06 Advanced Semiconductor Engineering, Inc. Assembly package with stacked dies and signal transmission plate
US7156562B2 (en) 2003-07-15 2007-01-02 National Semiconductor Corporation Opto-electronic module form factor having adjustable optical plane height
US20050013581A1 (en) * 2003-07-15 2005-01-20 National Semiconductor Corporation Multi-purpose optical light pipe
US6985668B2 (en) 2003-07-15 2006-01-10 National Semiconductor Corporation Multi-purpose optical light pipe
US20050013560A1 (en) * 2003-07-15 2005-01-20 National Semiconductor Corporation Opto-electronic module form factor having adjustable optical plane height
US20070015314A1 (en) * 2004-05-24 2007-01-18 Chippac, Inc Adhesive/Spacer Island Structure for Multiple Die Package
US8623704B2 (en) * 2004-05-24 2014-01-07 Chippac, Inc. Adhesive/spacer island structure for multiple die package
US9153562B2 (en) 2004-11-03 2015-10-06 Tessera, Inc. Stacked packaging improvements
US9570416B2 (en) 2004-11-03 2017-02-14 Tessera, Inc. Stacked packaging improvements
KR100658734B1 (en) 2004-11-11 2006-12-19 주식회사 유니세미콘 A stack semiconductor package and its manufacture method
US20080203552A1 (en) * 2005-02-15 2008-08-28 Unisemicon Co., Ltd. Stacked Package and Method of Fabricating the Same
US7288841B2 (en) 2005-06-13 2007-10-30 Shinko Electric Industries, Co., Ltd. Laminated semiconductor package
US20060278968A1 (en) * 2005-06-13 2006-12-14 Shinko Electric Industries Co., Ltd. Laminated semiconductor package
EP1734581A1 (en) * 2005-06-13 2006-12-20 Shinko Electric Industries Co., Ltd. Laminated semiconductor package
US9984901B2 (en) 2005-12-23 2018-05-29 Tessera, Inc. Method for making a microelectronic assembly having conductive elements
US9218988B2 (en) 2005-12-23 2015-12-22 Tessera, Inc. Microelectronic packages and methods therefor
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US8461673B2 (en) 2006-10-10 2013-06-11 Tessera, Inc. Edge connect wafer level stacking
US20110031629A1 (en) * 2006-10-10 2011-02-10 Tessera, Inc. Edge connect wafer level stacking
US20110033979A1 (en) * 2006-10-10 2011-02-10 Tessera, Inc. Edge connect wafer level stacking
US20110049696A1 (en) * 2006-10-10 2011-03-03 Tessera, Inc. Off-chip vias in stacked chips
US9899353B2 (en) 2006-10-10 2018-02-20 Tessera, Inc. Off-chip vias in stacked chips
US20110187007A1 (en) * 2006-10-10 2011-08-04 Tessera, Inc. Edge connect wafer level stacking
US9048234B2 (en) 2006-10-10 2015-06-02 Tessera, Inc. Off-chip vias in stacked chips
US8022527B2 (en) * 2006-10-10 2011-09-20 Tessera, Inc. Edge connect wafer level stacking
US20080083976A1 (en) * 2006-10-10 2008-04-10 Tessera, Inc. Edge connect wafer level stacking
US8076788B2 (en) 2006-10-10 2011-12-13 Tessera, Inc. Off-chip vias in stacked chips
US8999810B2 (en) 2006-10-10 2015-04-07 Tessera, Inc. Method of making a stacked microelectronic package
US9378967B2 (en) 2006-10-10 2016-06-28 Tessera, Inc. Method of making a stacked microelectronic package
US8476774B2 (en) 2006-10-10 2013-07-02 Tessera, Inc. Off-chip VIAS in stacked chips
US8426957B2 (en) 2006-10-10 2013-04-23 Tessera, Inc. Edge connect wafer level stacking
US8431435B2 (en) 2006-10-10 2013-04-30 Tessera, Inc. Edge connect wafer level stacking
EP1916713A3 (en) * 2006-10-27 2010-01-27 Shinko Electric Industries Co., Ltd. Semiconductor package and stacked layer type semiconductor package formed with it
US8253229B2 (en) 2006-10-27 2012-08-28 Shinko Electric Industries Co., Ltd. Semiconductor package and stacked layer type semiconductor package
US20080290491A1 (en) * 2006-10-27 2008-11-27 Shinko Electric Industries Co., Ltd. Semiconductor package and stacked layer type semiconductor package
EP1916713A2 (en) * 2006-10-27 2008-04-30 Shinko Electric Industries Co., Ltd. Semiconductor package and stacked layer type semiconductor package formed with it
US8883562B2 (en) 2007-07-27 2014-11-11 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
US20110006432A1 (en) * 2007-07-27 2011-01-13 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
US8461672B2 (en) 2007-07-27 2013-06-11 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
US8551815B2 (en) 2007-08-03 2013-10-08 Tessera, Inc. Stack packages using reconstituted wafers
US8513794B2 (en) 2007-08-09 2013-08-20 Tessera, Inc. Stacked assembly including plurality of stacked microelectronic elements
US20090039528A1 (en) * 2007-08-09 2009-02-12 Tessera, Inc. Wafer level stacked packages with individual chip selection
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
US20090316378A1 (en) * 2008-06-16 2009-12-24 Tessera Research Llc Wafer level edge stacking
US8680662B2 (en) 2008-06-16 2014-03-25 Tessera, Inc. Wafer level edge stacking
US8466542B2 (en) 2009-03-13 2013-06-18 Tessera, Inc. Stacked microelectronic assemblies having vias extending through bond pads
US20100230795A1 (en) * 2009-03-13 2010-09-16 Tessera Technologies Hungary Kft. Stacked microelectronic assemblies having vias extending through bond pads
US8647927B2 (en) 2010-01-27 2014-02-11 Thales Holdings Uk Plc Microwave circuit package
US20110210431A1 (en) * 2010-01-27 2011-09-01 Thales Holdings Uk Plc Microwave circuit package
GB2477291A (en) * 2010-01-27 2011-08-03 Thales Holdings Uk Plc Microwave circuit package
GB2477291B (en) * 2010-01-27 2014-06-11 Thales Holdings Uk Plc Microwave circuit package
US9123664B2 (en) 2010-07-19 2015-09-01 Tessera, Inc. Stackable molded microelectronic packages
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US10128216B2 (en) 2010-07-19 2018-11-13 Tessera, Inc. Stackable molded microelectronic packages
US9570382B2 (en) 2010-07-19 2017-02-14 Tessera, Inc. Stackable molded microelectronic packages
US9553076B2 (en) 2010-07-19 2017-01-24 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US8637991B2 (en) * 2010-11-15 2014-01-28 Tessera, Inc. Microelectronic package with terminals on dielectric mass
US20120119380A1 (en) * 2010-11-15 2012-05-17 Tessera, Inc. Microelectronic package with terminals on dielectric mass
US9324681B2 (en) 2010-12-13 2016-04-26 Tessera, Inc. Pin attachment
US9224717B2 (en) 2011-05-03 2015-12-29 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
US11424211B2 (en) 2011-05-03 2022-08-23 Tessera Llc Package-on-package assembly with wire bonds to encapsulation surface
US9691731B2 (en) 2011-05-03 2017-06-27 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
US8697457B1 (en) 2011-06-22 2014-04-15 Bae Systems Information And Electronic Systems Integration Inc. Devices and methods for stacking individually tested devices to form multi-chip electronic modules
US10756049B2 (en) 2011-10-17 2020-08-25 Invensas Corporation Package-on-package assembly with wire bond vias
US11735563B2 (en) 2011-10-17 2023-08-22 Invensas Llc Package-on-package assembly with wire bond vias
US9041227B2 (en) 2011-10-17 2015-05-26 Invensas Corporation Package-on-package assembly with wire bond vias
US9252122B2 (en) 2011-10-17 2016-02-02 Invensas Corporation Package-on-package assembly with wire bond vias
US9105483B2 (en) 2011-10-17 2015-08-11 Invensas Corporation Package-on-package assembly with wire bond vias
US9761558B2 (en) 2011-10-17 2017-09-12 Invensas Corporation Package-on-package assembly with wire bond vias
US11189595B2 (en) 2011-10-17 2021-11-30 Invensas Corporation Package-on-package assembly with wire bond vias
US9691679B2 (en) 2012-02-24 2017-06-27 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9349706B2 (en) 2012-02-24 2016-05-24 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9917073B2 (en) 2012-07-31 2018-03-13 Invensas Corporation Reconstituted wafer-level package dram with conductive interconnects formed in encapsulant at periphery of the package
US10297582B2 (en) 2012-08-03 2019-05-21 Invensas Corporation BVA interposer
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US9615456B2 (en) 2012-12-20 2017-04-04 Invensas Corporation Microelectronic assembly for microelectronic packaging with bond elements to encapsulation surface
US9095074B2 (en) 2012-12-20 2015-07-28 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9601454B2 (en) 2013-02-01 2017-03-21 Invensas Corporation Method of forming a component having wire bonds and a stiffening layer
US10460958B2 (en) 2013-08-07 2019-10-29 Invensas Corporation Method of manufacturing embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US10008477B2 (en) 2013-09-16 2018-06-26 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US10026717B2 (en) 2013-11-22 2018-07-17 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9728527B2 (en) 2013-11-22 2017-08-08 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9852969B2 (en) 2013-11-22 2017-12-26 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US10529636B2 (en) 2014-01-17 2020-01-07 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US9837330B2 (en) 2014-01-17 2017-12-05 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US11404338B2 (en) 2014-01-17 2022-08-02 Invensas Corporation Fine pitch bva using reconstituted wafer with area array accessible for testing
US10475726B2 (en) 2014-05-29 2019-11-12 Invensas Corporation Low CTE component with wire bond interconnects
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US10032647B2 (en) 2014-05-29 2018-07-24 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US20210111132A1 (en) * 2018-02-15 2021-04-15 Micron Technology, Inc. Method for Substrate Moisture NCF Voiding Elimination

Also Published As

Publication number Publication date
JPH11354669A (en) 1999-12-24
DE19845316C2 (en) 2002-01-24
JP3063032B2 (en) 2000-07-12
DE19845316A1 (en) 1999-12-02
US6407448B2 (en) 2002-06-18
KR19990086916A (en) 1999-12-15
US6291259B1 (en) 2001-09-18
KR100266693B1 (en) 2000-09-15

Similar Documents

Publication Publication Date Title
US6407448B2 (en) Stackable ball grid array semiconductor package and fabrication method thereof
US5684330A (en) Chip-sized package having metal circuit substrate
US7391105B2 (en) Unit semiconductor chip and multi chip package with center bonding pads and methods for manufacturing the same
US6043430A (en) Bottom lead semiconductor chip package
US5677566A (en) Semiconductor chip package
US6738263B2 (en) Stackable ball grid array package
US6531337B1 (en) Method of manufacturing a semiconductor structure having stacked semiconductor devices
US8269323B2 (en) Integrated circuit package with etched leadframe for package-on-package interconnects
US5838061A (en) Semiconductor package including a semiconductor chip adhesively bonded thereto
US20090032913A1 (en) Component and assemblies with ends offset downwardly
US7105919B2 (en) Semiconductor package having ultra-thin thickness and method of manufacturing the same
US20030089983A1 (en) Ball grid array semiconductor package
US6329708B1 (en) Micro ball grid array semiconductor device and semiconductor module
US6285086B1 (en) Semiconductor device and substrate for semiconductor device
US5708304A (en) Semiconductor device
US6137162A (en) Chip stack package
US5951804A (en) Method for simultaneously manufacturing chip-scale package using lead frame strip with a plurality of lead frames
US5994772A (en) Semiconductor package
CA2095609C (en) Leadless pad array chip carrier
US6166435A (en) Flip-chip ball grid array package with a heat slug
US20050156322A1 (en) Thin semiconductor package including stacked dies
JP3850712B2 (en) Multilayer semiconductor device
USRE43112E1 (en) Stackable ball grid array package
KR100464561B1 (en) Semiconductor package and manufacturing method the same
US6285077B1 (en) Multiple layer tape ball grid array package

Legal Events

Date Code Title Description
STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

AS Assignment

Owner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OF

Free format text: CHANGE OF NAME;ASSIGNOR:HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.;REEL/FRAME:026828/0688

Effective date: 20010329

AS Assignment

Owner name: 658868 N.B. INC., CANADA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HYNIX SEMICONDUCTOR INC.;REEL/FRAME:027234/0549

Effective date: 20110822

AS Assignment

Owner name: ROYAL BANK OF CANADA, CANADA

Free format text: U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM;ASSIGNORS:658276 N.B. LTD.;658868 N.B. INC.;MOSAID TECHNOLOGIES INCORPORATED;REEL/FRAME:027512/0196

Effective date: 20111223

FPAY Fee payment

Year of fee payment: 12

AS Assignment

Owner name: CONVERSANT IP N.B. 868 INC., CANADA

Free format text: CHANGE OF NAME;ASSIGNOR:658868 N.B. INC.;REEL/FRAME:032439/0547

Effective date: 20140101

AS Assignment

Owner name: CONVERSANT IP N.B. 868 INC., CANADA

Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:ROYAL BANK OF CANADA;REEL/FRAME:033484/0344

Effective date: 20140611

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.,

Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:ROYAL BANK OF CANADA;REEL/FRAME:033484/0344

Effective date: 20140611

Owner name: CONVERSANT IP N.B. 276 INC., CANADA

Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:ROYAL BANK OF CANADA;REEL/FRAME:033484/0344

Effective date: 20140611

AS Assignment

Owner name: CPPIB CREDIT INVESTMENTS INC., AS LENDER, CANADA

Free format text: U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:CONVERSANT IP N.B. 868 INC.;REEL/FRAME:033707/0001

Effective date: 20140611

Owner name: ROYAL BANK OF CANADA, AS LENDER, CANADA

Free format text: U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:CONVERSANT IP N.B. 868 INC.;REEL/FRAME:033707/0001

Effective date: 20140611

AS Assignment

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.,

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CONVERSANT IP N.B. 868 INC.;REEL/FRAME:036159/0386

Effective date: 20150514

AS Assignment

Owner name: CPPIB CREDIT INVESTMENTS, INC., CANADA

Free format text: AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.;REEL/FRAME:046900/0136

Effective date: 20180731

AS Assignment

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC., CANADA

Free format text: RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:ROYAL BANK OF CANADA, AS LENDER;REEL/FRAME:047645/0424

Effective date: 20180731

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.,

Free format text: RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:ROYAL BANK OF CANADA, AS LENDER;REEL/FRAME:047645/0424

Effective date: 20180731

AS Assignment

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC., CANADA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CPPIB CREDIT INVESTMENTS INC.;REEL/FRAME:054371/0884

Effective date: 20201028