US20010014571A1 - Method and apparatus for increasing chemical-mechanical-polishing selectivity - Google Patents
Method and apparatus for increasing chemical-mechanical-polishing selectivity Download PDFInfo
- Publication number
- US20010014571A1 US20010014571A1 US09/800,711 US80071101A US2001014571A1 US 20010014571 A1 US20010014571 A1 US 20010014571A1 US 80071101 A US80071101 A US 80071101A US 2001014571 A1 US2001014571 A1 US 2001014571A1
- Authority
- US
- United States
- Prior art keywords
- cmp
- pad
- contact
- contact portions
- duty cycle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
- B24D13/142—Wheels of special form
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
Definitions
- the present invention relates generally to semiconductor manufacture, and more particularly to polishing a substrate assembly surface using a chemical-mechanical-polishing (CMP) pad.
- CMP chemical-mechanical-polishing
- substrate assembly it is meant to include a bare wafer, as well as a wafer having one or more layers of material formed on it. Such layers are patterned to produce devices (e.g., transistors, diodes, capacitors, interconnects, etc.) for integrated circuits. In forming these devices, the one or more patterned layers can result in topographies of various heights.
- lithography In patterning layers on a wafer or patterning trenches in a wafer, lithography is used to transfer an image on a mask to a surface of the substrate assembly.
- Lithography (“microlithography” or “photolithography”) has resolution limits based in part on depth of focus requirements. These limits become more critical as geometries are diminished.
- to have a target surface area of a substrate assembly in focus for lithographic patterning it is necessary that the target surface area be sufficiently planar for the lithography employed.
- topographies of various heights make planarity problematic.
- CMP chemical-mechanical-polishing
- CMP may be used to remove unwanted material, and more particularly, may be employed to planarize a surface area of a substrate assembly. In removing unwanted material, it is important to remove as little wanted material as possible.
- chemical solutions used in CMP are often formulated to be more selective to remove one material over another, and thus the solution's chemical composition is directed at removing different materials at different rates.
- Rodel ILD1300 made by Rodel, Inc.
- Rodel ILD1300 also has a twelve to one (12:1) selectivity of BPSG to nitride.
- CMP In addition to chemical reactions, CMP also includes a mechanical component for removing material. Mechanical removal for CMP is generally described by Preston's equation:
- R CMP is the mechanical removal rate
- P is the pressure
- v is the relative velocity between a porous polishing pad and a substrate assembly surface
- K CMP is a constant proportional to the coefficient of friction between the pad and the substrate assembly surface.
- P is 20,685 to 55,160 Pa (3 to 8 pounds per square inch (psi))
- n is 0.333 to 1.667 rev/s (20 to 100 rpms).
- K CMP depends on the material(s) being removed.
- porous pads with continuous grooves in concentric ellipses have been made.
- porous it is meant that CMP solution particles may be absorbed within pad material.
- Such intrinsically porous pads allow for transport of CMP solution particles across raised portions of pads with continuous grooves. Pitch of such grooves or channels is conventionally 0.1 to 2 mm wide. Notably, this approach is directed at removing materials more readily, and not directed at selectively removing a material as between materials.
- a non-porous pad is described in U.S. Pat. No. 5,489,233 to Cook, et al.
- a pad is formed out of a solid uniform polymer sheet.
- the polymer sheet has no intrinsic ability to absorb CMP solution particles.
- Such non-porous pads are formed with channels of varying configurations (macro-textured).
- the raised portions or contact portions of such non-porous pads are roughened (micro-textured) to allow transport of slurry particulate from channel to channel.
- such pads may be impregnated with microelements to provide such micro-texturing, as described in U.S. Pat. No. 5,578,362 to Reinhardt, et al.
- the present invention provides enhanced selectivity in a CMP process by providing a special purpose CMP pad.
- a CMP pad includes at least one predetermined duty cycle of non-contact portions (those surfaces directed toward but not contacting a substrate assembly surface during polishing) to contact portions (those surfaces directed toward and contacting a substrate assembly surface during polishing).
- Such a CMP pad is formed at least in part from a material that intrinsically is non-porous with respect to a CMP solution particulate to be employed with use of the pad.
- such a CMP pad may be configured to transport CMP solution particulate across its contact portions.
- Such a CMP pad alters relative removal rates of materials without altering CMP solution chemical composition.
- a duty cycle in accordance with the present invention is provided by configuring a CMP pad with a recessed portion or a raised portion, such as by a recess or an island, to provide a non-contact portion and a contact portion, respectively.
- a duty cycle or spatial frequency for an arrangement or pattern of islands or recesses is selected to enhance selectivity as between materials to be polished. Accordingly, such a CMP pad may be programmed with a target selectivity by configuring it with a predetermined duty cycle.
- CMP pads in accordance with the present invention are to provide improved selectivity over CMP chemical selectivities alone. Such pads may be used to remove one dielectric in the presence of another dielectric, such as one silicon oxide, doped or undoped, in the presence of another silicon-oxide, doped or undoped.
- FIG. 1 is a cross-sectional view of an exemplary portion of a substrate assembly prior to planarization
- FIG. 2 is a cross-sectional view of the substrate assembly of FIG. 1 after conventional planarization
- FIG. 3 is a cross-sectional view of the substrate assembly of FIG. 1 after planarization in accordance with the present invention
- FIG. 4 is a perspective view of an exemplary portion of a CMP system in accordance with the present invention.
- FIG. 5 is a cross-sectional view of the CMP system of FIG. 4;
- FIG. 6 is a top elevation view of an embodiment of a circular-polishing pad in accordance with the present invention.
- FIG. 7 is a cross-sectional view along A1-A2 of the pad of FIG. 6;
- FIGS. 8 and 9 are top elevation views of exemplary portions of respective embodiments of linear polishing pads in accordance with the present invention.
- FIGS. 10 and 11 are graphs for removal rates of BPSG and TEOS, respectively, for an embodiment of a CMP process in accordance with the present invention.
- FIG. 12 is a graph of duty cycle versus selectivity in accordance with the present invention.
- Substrate assembly 10 comprises substrate 11 (e.g., a semiconductive material such as single crystalline silicon), transistor gate oxide 12 , transistor gate 13 , TEOS layer 14 , and BPSG layer 15 .
- substrate 11 e.g., a semiconductive material such as single crystalline silicon
- transistor gate oxide 12 transistor gate 13
- TEOS layer 14 acts as an insulator for transistor gate 13 . As such, it is important not to remove too much TEOS from layer 14 when planarizing.
- FIG. 2 there is shown a cross-sectional view of substrate assembly 10 of FIG. 1 after conventional planarization.
- TEOS layer 14 has been completely remove above transistor gate 13 . This is to emphasize that owing to conventional selectivity limits, there is a relatively narrow process window in which to stop a CMP process from removing too much TEOS from layer 14 when planarizing BPSG layer 15 .
- FIG. 3 there is shown a cross-sectional view of substrate assembly 10 after planarization in accordance with the present invention.
- a comparison of substrate assembly 10 of FIGS. 2 and 3 demonstrates an increase in process window with the present invention.
- a CMP process window is increased such that there is more time in which to expose substrate assembly 10 to polishing without significantly removing TEOS from layer 14 .
- FIG. 4 there is shown a perspective view of an exemplary portion of a CMP system (chemical-mechanical polisher) 30 in accordance with the present invention.
- FIG. 5 there is shown a cross-sectional view of CMP system 30 of FIG. 4, where drive assemblies 31 and 32 have been added.
- System 30 comprises platen 21 , surface-patterned-non-porous polishing pad 22 , CMP solution 23 , support ring 24 , and substrate assembly carrier (“wafer carrier”) 25 .
- Wafer carrier substrate assembly carrier
- Platen 21 and wafer carrier 25 are attached to drive shafts 26 and 27 , respectively, for rotation.
- platen 21 and wafer carrier 25 are rotated in a same direction, as illustratively indicated in FIG. 3 by arrows 28 and 29 .
- Other conventional details with respect to CMP system 30 have been omitted to more clearly describe the present invention.
- wafer carrier 25 may be rotated at one or more speeds, and such rotational speed may be varied during processing to affect material removal rate. It should be understood that it is not necessary to use rotational movement, rather any movement across contact portions and non-contact portions of pad 22 may be used, including but not limited to linear movement.
- Pad 22 comprises a non-porous surface 43 having contact portions (e.g., islands) 41 and non-contact portions (e.g., recesses) 42 . While pad 22 may be made of a solid non-porous material, it may also be formed of more than one material, where a contact surface is formed of the non-porous material.
- pad 22 has been shown with radially extending concentric islands and recesses, such configuration is just one embodiment.
- elliptical, spiral, or transverse (linear) recesses and islands may be employed in accordance with the present invention.
- discrete islands may be formed on a CMP pad.
- such discrete islands may be pillars, pyramids, mesas (including frusticonicals), cones, and like protrusions extending upward from a CMP pad surface.
- Such discrete islands may be spaced apart to provide at least one predetermined gap between them to provide at least one duty cycle.
- Such islands may be arranged to form rings, stripes, spirals, or ellipses, among other patterns.
- FIG. 7 there is shown a cross-sectional view along A1-A2 of pad 22 of FIG. 6.
- Contact portions 41 have formed or micro-roughened top surfaces 45 to allow CMP solution particles 50 to move across them.
- microelements such as those described in U.S. Pat. No. 5,578,362, may be impregnated in pad 22 to provide a micro-textured surface.
- Width (pitch) 44 is wider than CMP solution particles 50 used in CMP solution 23 . While widths 44 are shown as uniform, widths of varying sizes may be used.
- pad 22 is formed with contact and non-contact portions, as well as a non-porous surface 43 , it is possible to distinctly separate mechanical and chemical interactions of a CMP process. Therefore, such a CMP pad has both abrasion (contact to a substrate assembly surface with CMP solution particles) regions and hydrolyzation (contact to a substrate assembly surface with CMP solution) regions to remove material.
- material removal is mostly or completely a mechanical interaction governed by Preston's equation.
- non-contact portions 42 material removal is mostly or completely a chemical interaction governed by the equation:
- R OH is the chemical removal rate
- K OH is a hydrolyzation reaction rate constant
- ⁇ [pH] is a function dependent on the pH level of CMP solution 23 .
- the amount of material removed is dependent in part upon the velocity, v, at which substrate assembly 40 is moved across non-contact portions 42 and contact portions 41 .
- a ratio of total material removed in a pass over L 1 and L 2 may be mathematically expressed as: ( R OH , M1 * L 1 + R CMP , M1 * L 2 ) / v ( R OH , M2 * L 1 + R CMP , M2 * L 2 ) / v , ( 5 )
- R CMP,M1 and R CMP,M2 are removal rates of non-hydrolyzed materials M1 and M2, respectively.
- M1 is BPSG and M2 is TEOS
- L 1 is BPSG and M2 is TEOS
- BPSG to TEOS selectivity is governed by the relative hydrolyzation rates of M1 and M2. Such selectivity may be approximated by an associated wet etch chemistry selectivity.
- CMP coefficients i.e., the relative abrasion rates of M1 and M2
- approaches a non-recessed pad selectivity i.e., the relative abrasion rates of M1 and M2
- FIGS. 8 and 9 illustratively show two non-porous pads 50 and 60 having different configurations in accordance with the present invention.
- Pad 50 comprises transverse contact portions 51 and non-contact portions 52
- pad 60 comprises transverse contact portions 61 and non-contact portions 62 .
- Pitch 54 of non-contact portions 52 is greater than pitch 64 of non-contact portions 62 .
- Pads 50 and 60 have different recess pitches, namely, pitch 54 and pitch 64 .
- pitches 54 and 64 provide different contact frequencies. Consequently, contact-to-non-contact time ratio is adjustable. In other words, the ratio of contact portion 51 , 61 pitch to non-contact portion 52 , 62 pitch, respectively, affects contact-to-non-contact time.
- pad 50 has a different non-contact to contact duty cycle than pad 60 . It should be understood that one or more predetermined duty cycles with respect to contact and non-contact portions may be provided with a pad in accordance with the present invention.
- FIGS. 10 and 11 are graphs for removal rates of BPSG and TEOS, respectively, for the above-mentioned CMP process embodiment in accordance with the present invention.
- Contact portions of a CMP pad in accordance with the present invention are directed to mechanical abrasion for material removal, and non-contact portions of the pad act as discrete reactors for chemical reaction, such as hydrolyzation of silicon oxide or oxidation of metal. Owing to forming such a pad with a non-porous surface having a predetermined duty cycle, chemical and mechanical actions to remove materials in a CMP process are separated. Such a predetermined spatial frequency or duty cycle may be provided for enhancing selectively for removing one material over another.
- Duty cycle in FIG. 12 is the ratio of L 1 /(L 1 +L 2 ).
- selectivity is varied with a change in duty cycle for four examples.
- periodicity in FIG. 12 was set at or about 2 mm (i.e., L 1 +L 2 was set equal to 2 mm).
- Curve 101 represents an example where diffusion coefficients and abrasion coefficients (e.g., K CMP ) are relatively dominant factors in selectivity, such as when two dielectrics are present. More particularly, diffusion coefficient (D) is affected by doping.
- D diffusion coefficient
- BPSG with a 7% P and 3% B doping was selected as M1
- PTEOS with no doping was selected as M2.
- Curve 102 represents an example where abrasion coefficients and chemical removal rates (e.g., R OH ) are relatively dominant factors in selectivity, such as when two dielectrics are present.
- R OH chemical removal rates
- HDP oxide was selected as M1
- Si 3 N 4 was selected as M2.
- Polishing a silicon nitride in the above example may be extrapolated to polishing a semiconductor, such as silicon, germanium, et al., or a semiconductive composition, such as a GaAs, et al., in the presence of a dielectric.
- a semiconductor such as silicon, germanium, et al.
- a semiconductive composition such as a GaAs, et al.
- Curves 103 and 104 represent examples where chemical removal rates, abrasion coefficients, and passivation efficiency (P) are relatively dominant factors in selectivity, such as when two dielectrics or two conductors are present.
- BPSG was selected as M1
- tungsten (W) was selected as M2.
- curve 104 aluminum (Al) was selected as M1, and titanium (Ti) was selected as M2.
- the ratio of K CMP,M1 to K CMP,M2 is about 10, and the ratio of R OH,M1 to R OH,M2 is about 0.5.
- a CMP pad may be configured to have a target selectivity with respect to removing one or more materials in the presence of one or more other materials. Such a pad may then be placed on a CMP platform (e.g., platen, web, belt, and the like) for more selectively removing one or more materials over one or more other materials from a substrate assembly.
- a CMP platform e.g., platen, web, belt, and the like
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Method and apparatus for increasing chemical-mechanical-polishing (CMP) selectivity is described. A CMP pad is formed having a pattern of recesses and islands to provide non-contact portions and contact portions, respectively, with respect to contacting a substrate assembly surface to be polished. As the CMP pad is formed from a non-porous material, chemical and mechanical components of material removal are parsed to the non-contact portions and the contact portions, respectively. The relationship or spacing from one contact island to another, or, alternatively viewed, from one non-contact recess to another, provides a duty cycle, which is tailored to increase selectivity for removal of one or more materials over removal of one or more other materials during CMP of a substrate assembly.
Description
- The present invention relates generally to semiconductor manufacture, and more particularly to polishing a substrate assembly surface using a chemical-mechanical-polishing (CMP) pad.
- In microchip fabrication, integrated circuits are formed on a substrate assembly. By substrate assembly, it is meant to include a bare wafer, as well as a wafer having one or more layers of material formed on it. Such layers are patterned to produce devices (e.g., transistors, diodes, capacitors, interconnects, etc.) for integrated circuits. In forming these devices, the one or more patterned layers can result in topographies of various heights.
- In patterning layers on a wafer or patterning trenches in a wafer, lithography is used to transfer an image on a mask to a surface of the substrate assembly. Lithography (“microlithography” or “photolithography”) has resolution limits based in part on depth of focus requirements. These limits become more critical as geometries are diminished. Thus, to have a target surface area of a substrate assembly in focus for lithographic patterning, it is necessary that the target surface area be sufficiently planar for the lithography employed. However, topographies of various heights make planarity problematic.
- One approach to obtaining sufficient planarity is using a chemical-mechanical-polishing (CMP) process. CMP may be used to remove unwanted material, and more particularly, may be employed to planarize a surface area of a substrate assembly. In removing unwanted material, it is important to remove as little wanted material as possible. Thus, chemical solutions used in CMP are often formulated to be more selective to remove one material over another, and thus the solution's chemical composition is directed at removing different materials at different rates. One such solution, Rodel ILD1300 made by Rodel, Inc. of Newark, Del., has a four to one (4:1) selectivity of boro-phospho-silicate glass (BPSG) to a doped silicon oxide formed from tetraethyl orthosilicate (TEOS) [hereinafter the doped silicon oxide formed from TEOS is referred to as “TEOS”]. Rodel ILD1300 also has a twelve to one (12:1) selectivity of BPSG to nitride. Conventionally, improvements in CMP selectivity between silicon nitride and BPSG/TEOS, polysilicon and BPSG/TEOS, or tungsten and titanium nitride have been made by changing chemical composition of the solution, such as by varying pH for selectivity to nitride or varying oxidants for selectivity to metal.
- In addition to chemical reactions, CMP also includes a mechanical component for removing material. Mechanical removal for CMP is generally described by Preston's equation:
- R CMP =K CMP vP (1)
- where RCMP is the mechanical removal rate, P is the pressure, v is the relative velocity between a porous polishing pad and a substrate assembly surface, and KCMP is a constant proportional to the coefficient of friction between the pad and the substrate assembly surface. Conventionally, P is 20,685 to 55,160 Pa (3 to 8 pounds per square inch (psi)) and n is 0.333 to 1.667 rev/s (20 to 100 rpms). KCMP depends on the material(s) being removed.
- As direct contact between the pad and the substrate assembly surface reduces removal rate owing to an absence of CMP solution, porous pads with continuous grooves in concentric ellipses have been made. By porous, it is meant that CMP solution particles may be absorbed within pad material. Such intrinsically porous pads allow for transport of CMP solution particles across raised portions of pads with continuous grooves. Pitch of such grooves or channels is conventionally 0.1 to 2 mm wide. Notably, this approach is directed at removing materials more readily, and not directed at selectively removing a material as between materials.
- A non-porous pad is described in U.S. Pat. No. 5,489,233 to Cook, et al. In Cook et al., a pad is formed out of a solid uniform polymer sheet. The polymer sheet has no intrinsic ability to absorb CMP solution particles. Such non-porous pads are formed with channels of varying configurations (macro-textured). The raised portions or contact portions of such non-porous pads are roughened (micro-textured) to allow transport of slurry particulate from channel to channel. Notably, such pads may be impregnated with microelements to provide such micro-texturing, as described in U.S. Pat. No. 5,578,362 to Reinhardt, et al.
- In Cook et al., it is suggested that polishing rates may be adjusted by changing the pattern and density of the applied micro-texture and macro-texture. However, Cook et al. does not show or describe tailoring selectivity to particular materials. Accordingly, it would be desirable to have a methodology for CMP pad manufacturing which allows a target selectivity to be programmed into a CMP pad for a desired application.
- The present invention provides enhanced selectivity in a CMP process by providing a special purpose CMP pad. Such a CMP pad includes at least one predetermined duty cycle of non-contact portions (those surfaces directed toward but not contacting a substrate assembly surface during polishing) to contact portions (those surfaces directed toward and contacting a substrate assembly surface during polishing). Such a CMP pad is formed at least in part from a material that intrinsically is non-porous with respect to a CMP solution particulate to be employed with use of the pad. Furthermore, such a CMP pad may be configured to transport CMP solution particulate across its contact portions. Such a CMP pad alters relative removal rates of materials without altering CMP solution chemical composition.
- A duty cycle in accordance with the present invention is provided by configuring a CMP pad with a recessed portion or a raised portion, such as by a recess or an island, to provide a non-contact portion and a contact portion, respectively. A duty cycle or spatial frequency for an arrangement or pattern of islands or recesses is selected to enhance selectivity as between materials to be polished. Accordingly, such a CMP pad may be programmed with a target selectivity by configuring it with a predetermined duty cycle.
- CMP pads in accordance with the present invention are to provide improved selectivity over CMP chemical selectivities alone. Such pads may be used to remove one dielectric in the presence of another dielectric, such as one silicon oxide, doped or undoped, in the presence of another silicon-oxide, doped or undoped.
- Features and advantages of the present invention will become more apparent from the following description of the preferred embodiment(s) described below in detail with reference to the accompanying drawings where:
- FIG. 1 is a cross-sectional view of an exemplary portion of a substrate assembly prior to planarization;
- FIG. 2 is a cross-sectional view of the substrate assembly of FIG. 1 after conventional planarization;
- FIG. 3 is a cross-sectional view of the substrate assembly of FIG. 1 after planarization in accordance with the present invention;
- FIG. 4 is a perspective view of an exemplary portion of a CMP system in accordance with the present invention;
- FIG. 5 is a cross-sectional view of the CMP system of FIG. 4;
- FIG. 6 is a top elevation view of an embodiment of a circular-polishing pad in accordance with the present invention;
- FIG. 7 is a cross-sectional view along A1-A2 of the pad of FIG. 6;
- FIGS. 8 and 9 are top elevation views of exemplary portions of respective embodiments of linear polishing pads in accordance with the present invention; and
- FIGS. 10 and 11 are graphs for removal rates of BPSG and TEOS, respectively, for an embodiment of a CMP process in accordance with the present invention.
- FIG. 12 is a graph of duty cycle versus selectivity in accordance with the present invention.
- Reference numbers refer to the same or equivalent parts of the present invention throughout the several figures of the drawing.
- Though a stop on TEOS CMP planarization process for removal of BPSG embodiment is described in detail herein, it will be apparent to one of ordinary skill in the art that the present invention may be practiced with other materials, some of which are described elsewhere herein.
- Referring to FIG. 1, there is shown a cross-sectional view of an exemplary portion of a
substrate assembly 10 prior to planarization.Substrate assembly 10 comprises substrate 11 (e.g., a semiconductive material such as single crystalline silicon),transistor gate oxide 12,transistor gate 13,TEOS layer 14, andBPSG layer 15.TEOS layer 14 acts as an insulator fortransistor gate 13. As such, it is important not to remove too much TEOS fromlayer 14 when planarizing. - Referring to FIG. 2, there is shown a cross-sectional view of
substrate assembly 10 of FIG. 1 after conventional planarization. In this example,TEOS layer 14 has been completely remove abovetransistor gate 13. This is to emphasize that owing to conventional selectivity limits, there is a relatively narrow process window in which to stop a CMP process from removing too much TEOS fromlayer 14 when planarizingBPSG layer 15. - In FIG. 3, there is shown a cross-sectional view of
substrate assembly 10 after planarization in accordance with the present invention. A comparison ofsubstrate assembly 10 of FIGS. 2 and 3 demonstrates an increase in process window with the present invention. In this embodiment, because of an increase in selectivity to BPSG over TEOS provided by the present invention, a CMP process window is increased such that there is more time in which to exposesubstrate assembly 10 to polishing without significantly removing TEOS fromlayer 14. - Referring to FIG. 4, there is shown a perspective view of an exemplary portion of a CMP system (chemical-mechanical polisher)30 in accordance with the present invention. In FIG. 5, there is shown a cross-sectional view of
CMP system 30 of FIG. 4, wheredrive assemblies System 30 comprisesplaten 21, surface-patterned-non-porous polishing pad 22,CMP solution 23,support ring 24, and substrate assembly carrier (“wafer carrier”) 25.Platen 21 andwafer carrier 25 are attached to driveshafts platen 21 andwafer carrier 25 are rotated in a same direction, as illustratively indicated in FIG. 3 byarrows CMP system 30 have been omitted to more clearly describe the present invention. - Notably,
wafer carrier 25 may be rotated at one or more speeds, and such rotational speed may be varied during processing to affect material removal rate. It should be understood that it is not necessary to use rotational movement, rather any movement across contact portions and non-contact portions ofpad 22 may be used, including but not limited to linear movement. - In FIG. 6, there is shown a top elevation view of an embodiment of polishing
pad 22 in accordance with the present invention.Pad 22 comprises anon-porous surface 43 having contact portions (e.g., islands) 41 and non-contact portions (e.g., recesses) 42. Whilepad 22 may be made of a solid non-porous material, it may also be formed of more than one material, where a contact surface is formed of the non-porous material. - While
pad 22 has been shown with radially extending concentric islands and recesses, such configuration is just one embodiment. For example, elliptical, spiral, or transverse (linear) recesses and islands may be employed in accordance with the present invention. Alternatively, discrete islands may be formed on a CMP pad. By way of example and not limitation, such discrete islands may be pillars, pyramids, mesas (including frusticonicals), cones, and like protrusions extending upward from a CMP pad surface. Such discrete islands may be spaced apart to provide at least one predetermined gap between them to provide at least one duty cycle. Such islands may be arranged to form rings, stripes, spirals, or ellipses, among other patterns. - In FIG. 7, there is shown a cross-sectional view along A1-A2 of
pad 22 of FIG. 6. Contactportions 41 have formed or micro-roughenedtop surfaces 45 to allowCMP solution particles 50 to move across them. Alternatively, microelements, such as those described in U.S. Pat. No. 5,578,362, may be impregnated inpad 22 to provide a micro-textured surface. Width (pitch) 44 is wider thanCMP solution particles 50 used inCMP solution 23. Whilewidths 44 are shown as uniform, widths of varying sizes may be used. - While not wishing to be bound by theory, what ensues is an explanation of what is believed to be the theory of operation of
pad 22. Becausepad 22 is formed with contact and non-contact portions, as well as anon-porous surface 43, it is possible to distinctly separate mechanical and chemical interactions of a CMP process. Therefore, such a CMP pad has both abrasion (contact to a substrate assembly surface with CMP solution particles) regions and hydrolyzation (contact to a substrate assembly surface with CMP solution) regions to remove material. Alongsurfaces 45, material removal is mostly or completely a mechanical interaction governed by Preston's equation. Alongnon-contact portions 42, material removal is mostly or completely a chemical interaction governed by the equation: - R OH =K OHƒ[pH] (2)
- where ROH is the chemical removal rate, KOH is a hydrolyzation reaction rate constant, and ƒ[pH] is a function dependent on the pH level of
CMP solution 23. - The amount of material removed is dependent in part upon the velocity, v, at which
substrate assembly 40 is moved acrossnon-contact portions 42 andcontact portions 41. For anon-contact portion 42 with a width L1 and anadjacent contact portion 41 with a width L2, the amount of material removed on a pass over L1 and L2 may be mathematically expressed as: - (R OH *L 1 +R CMP *L 2)/v. (3)
- For balanced removal between chemical and mechanical removal,
- R OH *L 1 =R CMP *L 2. (4)
-
- where RCMP,M1 and RCMP,M2 are removal rates of non-hydrolyzed materials M1 and M2, respectively.
- If, for example, M1 is BPSG and M2 is TEOS, then, if L1>>L2, BPSG to TEOS selectivity is governed by the relative hydrolyzation rates of M1 and M2. Such selectivity may be approximated by an associated wet etch chemistry selectivity. However, if L1<<L2, BPSG to TEOS selectivity is governed by CMP coefficients (i.e., the relative abrasion rates of M1 and M2) and approaches a non-recessed pad selectivity. Therefore, by changing the relationship between L1 and L2, selectivity as between materials may be adjusted, as well as enhancing the relative contribution of removal rates of an etch chemistry.
-
- By way of example, FIGS. 8 and 9 illustratively show two
non-porous pads Pad 50 comprisestransverse contact portions 51 andnon-contact portions 52, andpad 60 comprisestransverse contact portions 61 andnon-contact portions 62.Pitch 54 ofnon-contact portions 52 is greater thanpitch 64 ofnon-contact portions 62. -
Pads pitch 54 andpitch 64. For a constantlinear velocity 55, relative polishing movement of a substrate assembly 10 (shown in FIG. 1) acrossportions contact portion non-contact portion pad 50 has a different non-contact to contact duty cycle thanpad 60. It should be understood that one or more predetermined duty cycles with respect to contact and non-contact portions may be provided with a pad in accordance with the present invention. - For the above-mentioned embodiment to remove BPSG and stop on TEOS, approximately a 1 mm contact pitch and approximately a 0.2 mm non-contact pitch were employed. In this embodiment, approximately a 6 to 1 selectivity ratio of selecting BPSG over TEOS was obtained, which is a 50 percent improvement over the prior art. Notably, this selectivity was achieved operating at a speed of 0.75 rev/s (45 rpm). This embodiment provides that TEOS may be removed at a rate in a range of 0.83 to 5.00 nm/s and BPSG may be removed at a rate in a range of 3.33 to 10.00 nm/s to provide a 6 to 1 selectivity ratio. FIGS. 10 and 11 are graphs for removal rates of BPSG and TEOS, respectively, for the above-mentioned CMP process embodiment in accordance with the present invention. A Rodel ILD1300 slurry and a polyurethane based pad, also available from Rodel, were used.
- Contact portions of a CMP pad in accordance with the present invention are directed to mechanical abrasion for material removal, and non-contact portions of the pad act as discrete reactors for chemical reaction, such as hydrolyzation of silicon oxide or oxidation of metal. Owing to forming such a pad with a non-porous surface having a predetermined duty cycle, chemical and mechanical actions to remove materials in a CMP process are separated. Such a predetermined spatial frequency or duty cycle may be provided for enhancing selectively for removing one material over another.
- Referring now to FIG. 12, there is shown a graph of duty cycle versus selectivity in accordance with the present invention. Duty cycle in FIG. 12 is the ratio of L1/(L1+L2). To graphically indicate how the present invention may be employed to alter selectivity between different materials, selectivity is varied with a change in duty cycle for four examples. By way of example and not limitation, periodicity in FIG. 12 was set at or about 2 mm (i.e., L1+L2 was set equal to 2 mm).
-
Curve 101 represents an example where diffusion coefficients and abrasion coefficients (e.g., KCMP) are relatively dominant factors in selectivity, such as when two dielectrics are present. More particularly, diffusion coefficient (D) is affected by doping. By way of example and not limitation, BPSG with a 7% P and 3% B doping was selected as M1, and PTEOS with no doping was selected as M2. The ratio of DM1/DM2 for these materials is about 20, and the ratio of KCMP,M1 to KCMP,M2 for these materials is about 4. From the graph of FIG. 12, selectivity increases alongcurve 101 as L1 approaches L1+L2, according toEquation 5, where L1=L2. -
Curve 102 represents an example where abrasion coefficients and chemical removal rates (e.g., ROH) are relatively dominant factors in selectivity, such as when two dielectrics are present. By way of example and not limitation, HDP oxide was selected as M1, and Si3N4 was selected as M2. The ratio of KCMP,M1 to KCMP,M2 is about 6, and the ratio of ROH,M1 to ROH,M2 is about 100. From the graph of FIG. 12, selectivity decreases alongcurve 102 as L1 approaches L1+L2, according toEquation 5, where L1=L2. Polishing a silicon nitride in the above example may be extrapolated to polishing a semiconductor, such as silicon, germanium, et al., or a semiconductive composition, such as a GaAs, et al., in the presence of a dielectric. - Curves103 and 104 represent examples where chemical removal rates, abrasion coefficients, and passivation efficiency (P) are relatively dominant factors in selectivity, such as when two dielectrics or two conductors are present. By way of example and not limitation for
curve 103, BPSG was selected as M1, and tungsten (W) was selected as M2. The ratio of KCMP,M1 to KCMP,M2 is about 20, and the ratio of ROH,M1 to ROH,M2 is about a 1000 or greater, as there is no meaningful hydrolyzation of metal. From the graph of FIG. 12, selectivity increases alongcurve 102 as L1 approaches L1+L2, according toEquation 5, where L1=L2. - By way of example and not limitation for
curve 104, aluminum (Al) was selected as M1, and titanium (Ti) was selected as M2. The ratio of KCMP,M1 to KCMP,M2 is about 10, and the ratio of ROH,M1 to ROH,M2 is about 0.5. Passivation efficiency for Al is about 0.6 and passivation efficiency for Ti is about zero. From the graph of FIG. 12, selectivity to increases alongcurve 102 as L1 approaches L1+L2, according toEquation 5, where L1=L2. - In accordance with the present invention, by selecting L1 and L2, a CMP pad may be configured to have a target selectivity with respect to removing one or more materials in the presence of one or more other materials. Such a pad may then be placed on a CMP platform (e.g., platen, web, belt, and the like) for more selectively removing one or more materials over one or more other materials from a substrate assembly.
- While the present invention has been particularly shown and described with respect to certain embodiment(s) thereof, it should be readily apparent to those of ordinary skill in the art that various changes and modifications in form and detail may be made without departing from the spirit and scope of the present invention as set forth in the appended claims. Accordingly, it is intended that the present invention only be limited by the appended claims.
Claims (60)
1. A method for forming a chemical-mechanical-polishing (CMP) pad to remove a first layer of material more rapidly than a second layer of material, said first layer of material and said second layer of material forming at least part of a substrate assembly, said method comprising:
providing a sheet member, said sheet member intrinsically non-porous with respect to CMP solution particles to be used with said CMP pad;
forming said sheet member to provide spaced-apart contact portions, said contact portions separated by at least one non-contact portion, said contact portions providing a surface to contact said substrate assembly during CMP, said contact portions spaced-apart to provide a predetermined duty cycle, said duty cycle predetermined to provide a target selectivity; and
said duty cycle predetermined at least in part by:
selecting a distance between said contact portions depending at least in part on said first layer of material and said second layer of material; and
selecting a width for said contact portions depending at least in part on said first layer of material and said second layer of material.
2. The method of , wherein said duty cycle is predetermined in part from a first CMP removal rate (RM1) associated with said first layer of material, a second CMP removal rate (RM2) associated with said second layer of material, a first chemical reaction rate (RC1) associated with said first layer of material, and a second chemical reaction rate associated with said second layer of material (RC2).
claim 1
3. The method of , wherein said duty cycle is predetermined from a ratio:
claim 2
(R C1 *L 1 +R M1 *L 2)/(R C2 *L 1 +R M2 *L 2),
where L1 is said distance between said contact portions, and where L2 is said width for said contact portions.
4. The method of , wherein said first chemical reaction rate and said second chemical reaction rate depend on a CMP solution to be used, said non-contact portion configured to contain said CMP solution for reaction with said substrate assembly.
claim 3
5. The method of , wherein said first CMP removal rate and said second CMP removal rate depends in part on a coefficient of friction between said CMP pad and said substrate assembly.
claim 4
6. The method of , wherein one of said first layer of material and said second layer of material is an insulator.
claim 1
7. The method of , wherein one of said first layer of material and said second layer of material is a semiconductor.
claim 1
8. The method of , wherein one of said first layer of material and said second layer of material is a conductor.
claim 1
9. The method of , wherein said first layer of material and said second layer of material are insulators.
claim 1
10. The method of , wherein said first layer of material and said second layer of material are conductors.
claim 1
11. A method for forming a chemical-mechanical-polishing (CMP) pad to remove a first material more rapidly than a second material, said first material and said second material forming at least part of a substrate assembly, said CMP pad to be used with a CMP solution having particles, said method comprising:
providing a polymer sheet, said polymer sheet intrinsically non-porous with respect to said particles;
forming said polymer sheet to provide spaced-apart contact portions, said contact portions formed to allow said particles to be transported, said contact portions separated by at least one non-contact portion for containing said CMP solution for reacting with said substrate assembly during CMP, said contact portions providing a surface to contact said first material and said second material of said substrate assembly during CMP, said contact portions spaced-apart to provide a predetermined duty cycle, said duty cycle predetermined to provide a target selectivity; and
said duty cycle predetermined at least in part by:
selecting a distance between said contact portions depending at least in part on said first material and said second material; and
selecting a width for said contact portions depending at least in part on said first material and said second material.
12. The method of , wherein said duty cycle is predetermined in part from a first CMP removal rate (RM1) associated with said first material, a second CMP removal rate (RM2) associated with said second material, a first chemical reaction rate (RC1) associated with said first material, and a second chemical reaction rate associated with said second material (RC2).
claim 11
13. The method of , wherein said duty cycle is predetermined from a ratio:
claim 12
(R C1 *L 1 +R M1 *L 2)/(R C2 *L 1 +R M2 *L 2),
where L1 is said distance between said contact portions, and where L2 is said width for said contact portions.
14. The method of , wherein said first chemical reaction rate and said second chemical reaction rate depend on said CMP solution to be used.
claim 13
15. The method of , wherein said first CMP removal rate depends in part on a coefficient of friction between said polymer sheet and said first material.
claim 14
16. The method of , wherein one of said first material and said second material is an insulator.
claim 11
17. The method of , wherein one of said first material and said second material is a semiconductor.
claim 11
18. The method of , wherein one of said first material and said second material is a conductor.
claim 11
19. The method of , wherein said first material and said second material are insulators.
claim 11
20. The method of , wherein said first material and said second material are conductors.
claim 11
21. A chemical-mechanical-polishing (CMP) pad programmed with a target selectivity for removing a first material more rapidly than a second material, said first material and said second material forming at least part of a substrate assembly, said CMP pad comprising:
a base member, said base member having at least one contact region and at least one non-contact region;
said at least one contact region formed at least in part of an intrinsically non-porous material with respect to CMP solution particles to be used with said CMP pad, said at least one contact region having a contact width determined at least in part from said first material and said second material;
said at least one non-contact region having a non-contact width determined at least in part from said first material and said second material; and
said contact width of said at least one contact region and said non-contact width of said at least one non-contact region in combination providing a duty cycle;
whereby said CMP pad is programmed with said target selectivity.
22. The method of , wherein one of said first material and said second material is an insulator.
claim 21
23. The method of , wherein one of said first material and said second material is a semiconductor.
claim 21
24. The method of , wherein one of said first material and said second material is a conductor.
claim 21
25. The method of , wherein said first material and said second material are insulators.
claim 21
26. The method of , wherein said first material and said second material are conductors.
claim 21
27. A chemical-mechanical-polishing (CMP) pad for planarizing a substrate assembly, said CMP pad programmed with a target selectivity based on a CMP solution, a first material, and a second material to be used therewith, said CMP pad comprising:
a base member, said base member formed of an intrinsically non-porous material with respect to CMP solution particles to be used with said CMP pad, said base member having an arrangement of recesses and islands;
said islands having a contact width determined at least in part based on said CMP solution, said first material, and said second material;
said recesses having a non-contact width determined at least in part based on said CMP solution, said first material, and said second material;
said contact width of said islands separated by said non-contact width of said recesses to provide a duty cycle;
whereby said CMP pad is programmed to provide said target selectivity.
28. The CMP pad of , wherein said duty cycle is determined in part from a first CMP removal rate (RM1) associated with said first material, a second CMP removal rate (RM2) associated with said second material, a first chemical reaction rate (RC1) associated with said first material and said CMP solution, and a second chemical reaction rate associated with said second material (RC2) and said CMP solution.
claim 27
29. The CMP pad of , wherein said duty cycle is determined from a ratio:
claim 28
(R C1 *L 1 +R M1 *L 2)/(R C2 *L 1 +R M2 *L 2),
where L1 is said non-contact width of said recesses, and where L2 is said contact width of said islands.
30. The CMP pad of , wherein said islands have a shape selected from pillars, pyramids, mesas, cones, spirals, and rings.
claim 27
31. The CMP pad of , wherein said islands form stripes for linear movement of said substrate assembly relative thereto.
claim 27
32. The CMP pad of , wherein said islands form radially extending concentric rings for rotational movement of said substrate assembly relative thereto.
claim 27
33. A method for chemical-mechanical-polishing (CMP) to selectively remove a first material over a second material, said first material and said second material forming part of a substrate assembly, said method comprising:
selecting a pad configured to remove said first material more rapidly than said second material, said pad formed at least in part of an intrinsically non-porous material with respect to CMP solution particles to be used therewith, said pad formed with spaced-apart contact portions;
said contact portions separated by at least one non-contact portion, said contact portions formed of said intrinsically non-porous material to provide a surface to contact said substrate assembly during CMP, said contact portions spaced-apart to provide a duty cycle, said duty cycle determined at least in part by:
selecting a contact width for said contact portions based at least in part on said CMP solution, said first material, and said second material;
selecting a non-contact width associated with spacing of said contact portions, said non-contact width selected based at least in part on said CMP solution, said first material, and said second material;
placing said pad on a chemical-mechanical-polisher platform;
providing said CMP solution to said pad; and
polishing said substrate assembly using said pad and said CMP solution.
34. The method of , wherein said duty cycle is determined in part from a first CMP removal rate (RM1) associated with said first material, a second CMP removal rate (RM2) associated with said second material, a first chemical reaction rate (RC1) associated with said first material and said CMP solution, and a second chemical reaction rate associated with said second material (RC2) and said CMP solution.
claim 33
35. The method of , wherein said duty cycle is determined from a ratio:
claim 34
(R C1 *L 1 +R M1 *L 2)/(R C2 *L 1 +R M2 *L 2),
where L1 is a distance between said contact portions, and where L2 is a width for said contact portions.
36. Method for chemical-mechanical-polishing (CMP) to selectively remove a first material more rapidly than a second material, said first material and said second material forming part of a substrate assembly, said method comprising:
selecting a CMP solution having particles;
selecting a pad configured to remove said first material more rapidly than said second material, said pad formed at least in part of an intrinsically non-porous material with respect to said particles, said pad formed with spaced-apart contact portions;
said contact portions separated by at least one non-contact portion for containing said CMP solution for reaction with said substrate assembly, said contact portions formed of said intrinsically non-porous material to provide a surface to contact said substrate assembly during CMP, said contact portions spaced-apart to provide a predetermined duty cycle, said contact portions having a rough surface sufficient to transport said particles;
said duty cycle predetermined at least in part by:
selecting a contact width for said contact portions based at least in part on said CMP solution, said first material, and said second material;
selecting a non-contact width for said at least one non-contact portion based at least in part on said CMP solution, said first material, and said second material; and
placing said pad on a chemical-mechanical-polisher platform.
37. The method of , wherein said duty cycle is predetermined in part from a first CMP removal rate (RM1) associated with said first material, a second CMP removal rate (RM2) associated with said second material, a first chemical reaction rate (RC1) associated with said first material and said CMP solution, and a second chemical reaction rate associated with said second material (RC2) and said CMP solution.
claim 36
38. The method of , wherein said duty cycle is predetermined from a ratio:
claim 37
(R C1 *L 1 +R M1 *L 2)/(R C2 *L 1 +R M2 *L 2),
where L1 is a width of said at least one non-contact portion, and where L2 is a width for said contact portions.
39. Method for setting up a polisher to more selectively remove a first material disposed over a second material, said first material and said second material forming part of a substrate assembly, said method comprising:
selecting a chemical-mechanical-polishing (CMP) solution;
determining a duty cycle to remove said first material more rapidly than said second material, said duty cycle determined by:
selecting a contact width based at least in part on said CMP solution, said first material, and said second material;
selecting a non-contact width for said at least one non-contact portion based at least in part on said CMP solution, said first material, and said second material;
configuring a pad with at least one raised portion to provide said duty cycle;
said raised portion defining at least one recessed portion, said raised portion providing a contact surface for contacting said substrate assembly during polishing; and
placing said pad on a polisher platform.
40. The method of , wherein said duty cycle is determined in part from a first CMP removal rate (RM1) associated with said first material, a second CMP1 removal rate (RM2) associated with said second material, a first chemical reaction rate (RC1) associated with said first material and said CMP solution, and a second chemical reaction rate associated with said second material (RC2) and said CMP solution.
claim 39
41. The method of , wherein said duty cycle is determined from a ratio:
claim 40
(R C1 *L 1 +R M1 *L 2)/(R C2 *L 1 +R M2 *L 2),
where L1 is said non-contact width, and where L2 is said contact width.
42. The method of , wherein said raised portion is configured to allow for transport of particles in said CMP solution across said contact surface during said polishing.
claim 39
43. A method for setting-up a chemical-mechanical polisher to enhance selective removal of a first substance disposed over a second substance on a substrate assembly, the chemical-mechanical polisher configured to receive a chemical-mechanical-polishing (CMP) solution having particulate, the method comprising:
providing a pad, the pad formed with discrete raised portions to define contact regions and non-contact regions, the contact regions formed at least in part of a material with no intrinsic ability to absorb the CMP solution particulate and patterned with a predetermined pitch and duty cycle to provide a target selectivity, the duty cycle predetermined at least in part by,
selecting the pitch based at least in part on the CMP solution, the first substance, and the second substance;
selecting a spacing of the contact regions based at least in part on the CMP solution, the first substance, and the second substance; and
placing the pad on the chemical-mechanical polisher to polish the substrate assembly.
44. The method of , further comprising:
claim 43
dispensing the CMP solution to polish the substrate assembly; and
polishing the substrate assembly.
45. The method of , further comprising:
claim 43
polishing the substrate assembly without using the CMP solution.
46. The method of , wherein the pad is a fixed-abrasive pad.
claim 45
47. A method for polishing a substrate assembly having a first material and a second material different from the first material, the method comprising:
providing a chemical-mechanical-polisher having a pad, the pad having a patterned surface defining raised regions and recessed regions and having a textured non-porous polishing surface, the pad configured to selectively remove the first material in the presence of the second material;
providing a polishing solution to react with at least one of the first material and the second material to provide a first selectivity ratio; and
moving the substrate assembly relative to the raised regions and the recessed regions to remove the first material faster than the second material at a second selectivity ratio, the second selectivity ratio greater than the first selectivity ratio.
48. A method for planarizing a substrate assembly having a first material disposed in near proximity to a second material, the method comprising:
providing a chemical-mechanical-polishing system having a pad, the pad having a patterned surface, the patterned surface defining contact portions and non-contact portions, the contact portions and non-contact portions configured to provide a predetermined duty cycle, the duty cycle predetermined to provide a target selectivity to remove the first material faster than the second material;
providing slurry onto the pad, the slurry having slurry particulate, the pad formed of a material having no intrinsic ability to absorb the slurry particulate; and
moving the substrate assembly relative to the channels to selectively remove the first doped material.
49. The method of , wherein the first material is a first insulator, and the second material is a second insulator.
claim 48
50. The method of , wherein the first material is a first glass, and the second material is a second glass.
claim 48
51. The method of , wherein the first material is a first silicon oxide, and the second material is a second silicon oxide.
claim 48
52. The method of , wherein the first silicon oxide is boro-phospho-silicate glass (BPSG), and the second silicon oxide is tetraethyl orthosilicate (TEOS).
claim 51
53. The method of , wherein the target selectivity is approximately six to one.
claim 52
54. The method of , wherein the contact portions have a rim pitch of approximately a 1 millimeter, and the non-contact portions have a recess pitch of approximately a 0.2 millimeters.
claim 53
55. The method of , wherein the first material is a silicon oxide, and the second material is a silicon nitride.
claim 48
56. The method of , wherein the contact portions and the non-contact portions each have a pitch in a range of 0.5 millimeters to 5 millimeters.
claim 48
57. The method of , wherein the first material is an insulator, and the second material is a conductor.
claim 48
58. The method of , wherein the insulator is boro-phospho-silicate glass (BPSG), and the conductor is tungsten (W).
claim 57
59. The method of , wherein the first material is a first conductor, and the second material is a second conductor.
claim 48
60. The method of , wherein the first conductor is aluminum, and the second conductor is titanium.
claim 59
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/800,711 US6325702B2 (en) | 1998-09-03 | 2001-03-07 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
US09/961,624 US6893325B2 (en) | 1998-09-03 | 2001-09-24 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/146,733 US6203407B1 (en) | 1998-09-03 | 1998-09-03 | Method and apparatus for increasing-chemical-polishing selectivity |
US09/800,711 US6325702B2 (en) | 1998-09-03 | 2001-03-07 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/146,733 Division US6203407B1 (en) | 1998-09-03 | 1998-09-03 | Method and apparatus for increasing-chemical-polishing selectivity |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/961,624 Continuation US6893325B2 (en) | 1998-09-03 | 2001-09-24 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010014571A1 true US20010014571A1 (en) | 2001-08-16 |
US6325702B2 US6325702B2 (en) | 2001-12-04 |
Family
ID=22518760
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/146,733 Expired - Lifetime US6203407B1 (en) | 1998-09-03 | 1998-09-03 | Method and apparatus for increasing-chemical-polishing selectivity |
US09/800,711 Expired - Fee Related US6325702B2 (en) | 1998-09-03 | 2001-03-07 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
US09/961,624 Expired - Fee Related US6893325B2 (en) | 1998-09-03 | 2001-09-24 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/146,733 Expired - Lifetime US6203407B1 (en) | 1998-09-03 | 1998-09-03 | Method and apparatus for increasing-chemical-polishing selectivity |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/961,624 Expired - Fee Related US6893325B2 (en) | 1998-09-03 | 2001-09-24 | Method and apparatus for increasing chemical-mechanical-polishing selectivity |
Country Status (1)
Country | Link |
---|---|
US (3) | US6203407B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050032462A1 (en) * | 2003-08-07 | 2005-02-10 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
US20050106834A1 (en) * | 2003-11-03 | 2005-05-19 | Andry Paul S. | Method and apparatus for filling vias |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6203407B1 (en) * | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Method and apparatus for increasing-chemical-polishing selectivity |
US6287174B1 (en) * | 1999-02-05 | 2001-09-11 | Rodel Holdings Inc. | Polishing pad and method of use thereof |
US6309277B1 (en) * | 1999-03-03 | 2001-10-30 | Advanced Micro Devices, Inc. | System and method for achieving a desired semiconductor wafer surface profile via selective polishing pad conditioning |
US6869343B2 (en) * | 2001-12-19 | 2005-03-22 | Toho Engineering Kabushiki Kaisha | Turning tool for grooving polishing pad, apparatus and method of producing polishing pad using the tool, and polishing pad produced by using the tool |
US7516536B2 (en) * | 1999-07-08 | 2009-04-14 | Toho Engineering Kabushiki Kaisha | Method of producing polishing pad |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
WO2001028477A1 (en) * | 1999-10-21 | 2001-04-26 | Technolas Gmbh Ophthalmologische Systeme | Multi-step laser correction of ophthalmic refractive errors |
US6306768B1 (en) | 1999-11-17 | 2001-10-23 | Micron Technology, Inc. | Method for planarizing microelectronic substrates having apertures |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6612901B1 (en) * | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6520834B1 (en) * | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6736869B1 (en) | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6838382B1 (en) * | 2000-08-28 | 2005-01-04 | Micron Technology, Inc. | Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates |
US6609947B1 (en) * | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6866566B2 (en) * | 2001-08-24 | 2005-03-15 | Micron Technology, Inc. | Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US6530829B1 (en) | 2001-08-30 | 2003-03-11 | Micron Technology, Inc. | CMP pad having isolated pockets of continuous porosity and a method for using such pad |
US6943114B2 (en) * | 2002-02-28 | 2005-09-13 | Infineon Technologies Ag | Integration scheme for metal gap fill, with fixed abrasive CMP |
US7131889B1 (en) * | 2002-03-04 | 2006-11-07 | Micron Technology, Inc. | Method for planarizing microelectronic workpieces |
US20030194959A1 (en) * | 2002-04-15 | 2003-10-16 | Cabot Microelectronics Corporation | Sintered polishing pad with regions of contrasting density |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7004817B2 (en) | 2002-08-23 | 2006-02-28 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
US6641632B1 (en) * | 2002-11-18 | 2003-11-04 | International Business Machines Corporation | Polishing compositions and use thereof |
US6866560B1 (en) * | 2003-01-09 | 2005-03-15 | Sandia Corporation | Method for thinning specimen |
US7074114B2 (en) * | 2003-01-16 | 2006-07-11 | Micron Technology, Inc. | Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US7131891B2 (en) * | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7030603B2 (en) * | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
US20050042976A1 (en) * | 2003-08-22 | 2005-02-24 | International Business Machines Corporation | Low friction planarizing/polishing pads and use thereof |
US7040965B2 (en) * | 2003-09-18 | 2006-05-09 | Micron Technology, Inc. | Methods for removing doped silicon material from microfeature workpieces |
TWI238100B (en) * | 2003-09-29 | 2005-08-21 | Iv Technologies Co Ltd | Polishing pad and fabricating method thereof |
US20050153634A1 (en) * | 2004-01-09 | 2005-07-14 | Cabot Microelectronics Corporation | Negative poisson's ratio material-containing CMP polishing pad |
US6951509B1 (en) * | 2004-03-09 | 2005-10-04 | 3M Innovative Properties Company | Undulated pad conditioner and method of using same |
US7086927B2 (en) * | 2004-03-09 | 2006-08-08 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
US20060079159A1 (en) * | 2004-10-08 | 2006-04-13 | Markus Naujok | Chemical mechanical polish with multi-zone abrasive-containing matrix |
KR20060045167A (en) * | 2004-11-09 | 2006-05-17 | 동성에이앤티 주식회사 | Polishing pad and fabricating method thereof |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7438626B2 (en) | 2005-08-31 | 2008-10-21 | Micron Technology, Inc. | Apparatus and method for removing material from microfeature workpieces |
US7294049B2 (en) | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
DE102005053297A1 (en) * | 2005-11-08 | 2007-05-10 | Bausch & Lomb Inc. | System and method for correcting ophthalmic refractive errors |
DE102006036086A1 (en) * | 2006-08-02 | 2008-02-07 | Bausch & Lomb Incorporated | Method and apparatus for calculating a laser shot file for use in a refractive excimer laser |
DE102006036085A1 (en) * | 2006-08-02 | 2008-02-07 | Bausch & Lomb Incorporated | Method and apparatus for calculating a laser shot file for use in an excimer laser |
US20080271384A1 (en) * | 2006-09-22 | 2008-11-06 | Saint-Gobain Ceramics & Plastics, Inc. | Conditioning tools and techniques for chemical mechanical planarization |
ITMC20070237A1 (en) * | 2007-12-12 | 2009-06-13 | Ghines Srl | PERFECTED ABRASIVE TOOL. |
DE102008028509A1 (en) * | 2008-06-16 | 2009-12-24 | Technolas Gmbh Ophthalmologische Systeme | Treatment pattern monitoring device |
TWI409137B (en) * | 2008-06-19 | 2013-09-21 | Bestac Advanced Material Co Ltd | Polishing pad and the method of forming micro-structure thereof |
DE102008035995A1 (en) * | 2008-08-01 | 2010-02-04 | Technolas Perfect Vision Gmbh | Combination of excimer laser ablation and femtosecond laser technique |
KR101261715B1 (en) * | 2008-08-28 | 2013-05-09 | 테크놀러스 퍼펙트 비젼 게엠베하 | Eye measurement and modeling techniques |
TWM352127U (en) * | 2008-08-29 | 2009-03-01 | Bestac Advanced Material Co Ltd | Polishing pad |
TWM352126U (en) * | 2008-10-23 | 2009-03-01 | Bestac Advanced Material Co Ltd | Polishing pad |
CN103962943A (en) * | 2009-03-24 | 2014-08-06 | 圣戈班磨料磨具有限公司 | Abrasive tool for use as a chemical mechanical planarization pad conditioner |
JP5453526B2 (en) * | 2009-06-02 | 2014-03-26 | サンーゴバン アブレイシブズ,インコーポレイティド | Corrosion-resistant CMP conditioning tool, and its production and use |
US20110097977A1 (en) * | 2009-08-07 | 2011-04-28 | Abrasive Technology, Inc. | Multiple-sided cmp pad conditioning disk |
SG178605A1 (en) | 2009-09-01 | 2012-04-27 | Saint Gobain Abrasives Inc | Chemical mechanical polishing conditioner |
JP6035346B2 (en) * | 2011-12-21 | 2016-11-30 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Method for manufacturing semiconductor device and method for using CMP composition |
US9969049B2 (en) * | 2015-06-29 | 2018-05-15 | Iv Technologies Co., Ltd. | Polishing layer of polishing pad and method of forming the same and polishing method |
CN108136563A (en) * | 2015-07-30 | 2018-06-08 | Jh罗得股份有限公司 | It polymerize polishing material, the medium comprising polymerization polishing material and system and its formation and application method |
WO2017053685A1 (en) | 2015-09-25 | 2017-03-30 | Cabot Microelectronics Corporation | Polyurethane cmp pads having a high modulus ratio |
US10864612B2 (en) * | 2016-12-14 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad and method of using |
US20190337119A1 (en) * | 2016-12-21 | 2019-11-07 | 3M Innovative Properties Company | Pad conditioner with spacer and wafer planarization system |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA679731A (en) | 1964-02-11 | H. Sandmeyer Karl | Bonded abrasive articles | |
US816461A (en) | 1904-12-22 | 1906-03-27 | George Gorton | Clearance-space grinding-disk. |
US888129A (en) | 1905-04-25 | 1908-05-19 | Carborundum Co | Manufacture of abrasive material. |
GB190626287A (en) | 1906-11-20 | 1907-11-20 | William Oliver Bailey | Improvements in Mills for Grinding and Polishing Glass. |
US959054A (en) | 1909-03-08 | 1910-05-24 | Charles Glover | Grinding and polishing disk. |
US1953983A (en) | 1928-02-07 | 1934-04-10 | Carborundum Co | Manufacture of rubber bonded abrasive articles |
US2242877A (en) | 1939-03-15 | 1941-05-20 | Albertson & Co Inc | Abrasive disk and method of making the same |
US2409953A (en) | 1943-10-13 | 1946-10-22 | Western Electric Co | Material treating apparatus |
US2653428A (en) | 1952-04-10 | 1953-09-29 | Paul K Fuller | Grinding disk |
US2749681A (en) | 1952-12-31 | 1956-06-12 | Stephen U Sohne A | Grinding disc |
US2749683A (en) | 1954-10-05 | 1956-06-12 | Western Electric Co | Lapping plate |
FR1195595A (en) | 1958-05-05 | 1959-11-18 | Improvements to grindstones, especially for stonework | |
US3468079A (en) | 1966-09-21 | 1969-09-23 | Kaufman Jack W | Abrasive-like tool device |
US3495362A (en) | 1967-03-17 | 1970-02-17 | Thunderbird Abrasives Inc | Abrasive disk |
US3517466A (en) | 1969-07-18 | 1970-06-30 | Ferro Corp | Stone polishing wheel for contoured surfaces |
US3627338A (en) * | 1969-10-09 | 1971-12-14 | Sheldon Thompson | Vacuum chuck |
FR2063961A1 (en) | 1969-10-13 | 1971-07-16 | Radiotechnique Compelec | Mechanico-chemical grinder for semi-con-ducting panels |
USRE31053E (en) | 1978-01-23 | 1982-10-12 | Bell Telephone Laboratories, Incorporated | Apparatus and method for holding and planarizing thin workpieces |
US4271640A (en) | 1978-02-17 | 1981-06-09 | Minnesota Mining And Manufacturing Company | Rotatable floor treating pad |
US4183545A (en) * | 1978-07-28 | 1980-01-15 | Advanced Simiconductor Materials/America | Rotary vacuum-chuck using no rotary union |
GB2043501B (en) | 1979-02-28 | 1982-11-24 | Interface Developments Ltd | Abrading member |
US4244775A (en) | 1979-04-30 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Process for the chemical etch polishing of semiconductors |
US4373991A (en) | 1982-01-28 | 1983-02-15 | Western Electric Company, Inc. | Methods and apparatus for polishing a semiconductor wafer |
US4663890A (en) | 1982-05-18 | 1987-05-12 | Gmn Georg Muller Nurnberg Gmbh | Method for machining workpieces of brittle hard material into wafers |
JPS60109859U (en) | 1983-12-28 | 1985-07-25 | 株式会社 デイスコ | Semiconductor wafer surface grinding equipment |
SU1206067A1 (en) | 1984-02-14 | 1986-01-23 | Научно-Исследовательский Институт "Сапфир" | Tool for hydrodynamic working of flat articles |
US4603867A (en) * | 1984-04-02 | 1986-08-05 | Motorola, Inc. | Spinner chuck |
JPS60242975A (en) | 1984-05-14 | 1985-12-02 | Kanebo Ltd | Surface grinding device |
JPS61159371A (en) | 1984-12-28 | 1986-07-19 | Fuji Seiki Seizosho:Kk | Lapping method for silicone wafer for substrate of integrated circuit, etc. and blasting device therefor |
DE3524978A1 (en) | 1985-07-12 | 1987-01-22 | Wacker Chemitronic | METHOD FOR DOUBLE-SIDED REMOVAL MACHINING OF DISK-SHAPED WORKPIECES, IN PARTICULAR SEMICONDUCTOR DISCS |
US4666553A (en) | 1985-08-28 | 1987-05-19 | Rca Corporation | Method for planarizing multilayer semiconductor devices |
US4621458A (en) | 1985-10-08 | 1986-11-11 | Smith Robert S | Flat disk polishing apparatus |
JPS6299072A (en) | 1985-10-22 | 1987-05-08 | Sumitomo Electric Ind Ltd | Method of working semiconductor wafer |
US4671851A (en) | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
JPS62107909A (en) | 1985-11-05 | 1987-05-19 | Disco Abrasive Sys Ltd | Two-blade core drill and manufacture thereof |
JPS62176755A (en) | 1986-01-31 | 1987-08-03 | Yasunori Taira | Surface polishing device |
US4711610A (en) * | 1986-04-04 | 1987-12-08 | Machine Technology, Inc. | Balancing chuck |
US4715150A (en) | 1986-04-29 | 1987-12-29 | Seiken Co., Ltd. | Nonwoven fiber abrasive disk |
US4811522A (en) | 1987-03-23 | 1989-03-14 | Gill Jr Gerald L | Counterbalanced polishing apparatus |
US4821461A (en) | 1987-11-23 | 1989-04-18 | Magnetic Peripherals Inc. | Textured lapping plate and process for its manufacture |
US4789424A (en) | 1987-12-11 | 1988-12-06 | Frank Fornadel | Apparatus and process for optic polishing |
US5020283A (en) | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5234867A (en) | 1992-05-27 | 1993-08-10 | Micron Technology, Inc. | Method for planarizing semiconductor wafers with a non-circular polishing pad |
US5177908A (en) | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
FR2658747B1 (en) | 1990-02-23 | 1992-07-03 | Cice Sa | RODING MACHINE AND TRACK WITH A VARIABLE PITCH FOR A SUCH MACHINE. |
US5142828A (en) | 1990-06-25 | 1992-09-01 | Microelectronics And Computer Technology Corporation | Correcting a defective metallization layer on an electronic component by polishing |
USRE34425E (en) | 1990-08-06 | 1993-11-02 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5081796A (en) | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5036015A (en) | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5137597A (en) | 1991-04-11 | 1992-08-11 | Microelectronics And Computer Technology Corporation | Fabrication of metal pillars in an electronic component using polishing |
US5069002A (en) | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
US5169491A (en) | 1991-07-29 | 1992-12-08 | Micron Technology, Inc. | Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques |
US5240552A (en) | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5223734A (en) | 1991-12-18 | 1993-06-29 | Micron Technology, Inc. | Semiconductor gettering process using backside chemical mechanical planarization (CMP) and dopant diffusion |
US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
US5514245A (en) | 1992-01-27 | 1996-05-07 | Micron Technology, Inc. | Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches |
US5222329A (en) | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
US5314843A (en) | 1992-03-27 | 1994-05-24 | Micron Technology, Inc. | Integrated circuit polishing method |
US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5216843A (en) | 1992-09-24 | 1993-06-08 | Intel Corporation | Polishing pad conditioning apparatus for wafer planarization process |
US5232875A (en) | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5540810A (en) | 1992-12-11 | 1996-07-30 | Micron Technology Inc. | IC mechanical planarization process incorporating two slurry compositions for faster material removal times |
US5300155A (en) | 1992-12-23 | 1994-04-05 | Micron Semiconductor, Inc. | IC chemical mechanical planarization process incorporating slurry temperature control |
US5487697A (en) | 1993-02-09 | 1996-01-30 | Rodel, Inc. | Polishing apparatus and method using a rotary work holder travelling down a rail for polishing a workpiece with linear pads |
US5302233A (en) | 1993-03-19 | 1994-04-12 | Micron Semiconductor, Inc. | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) |
US5382551A (en) | 1993-04-09 | 1995-01-17 | Micron Semiconductor, Inc. | Method for reducing the effects of semiconductor substrate deformities |
US5318927A (en) | 1993-04-29 | 1994-06-07 | Micron Semiconductor, Inc. | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials |
US5329734A (en) | 1993-04-30 | 1994-07-19 | Motorola, Inc. | Polishing pads used to chemical-mechanical polish a semiconductor substrate |
US5380546A (en) | 1993-06-09 | 1995-01-10 | Microelectronics And Computer Technology Corporation | Multilevel metallization process for electronic components |
US5441589A (en) | 1993-06-17 | 1995-08-15 | Taurus Impressions, Inc. | Flat bed daisy wheel hot debossing stamper |
US5486129A (en) | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5394655A (en) | 1993-08-31 | 1995-03-07 | Texas Instruments Incorporated | Semiconductor polishing pad |
US5395801A (en) | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
US5441598A (en) | 1993-12-16 | 1995-08-15 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5413941A (en) | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
US5439551A (en) | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
US5650039A (en) | 1994-03-02 | 1997-07-22 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved slurry distribution |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5449314A (en) | 1994-04-25 | 1995-09-12 | Micron Technology, Inc. | Method of chimical mechanical polishing for dielectric layers |
US5533924A (en) | 1994-09-01 | 1996-07-09 | Micron Technology, Inc. | Polishing apparatus, a polishing wafer carrier apparatus, a replacable component for a particular polishing apparatus and a process of polishing wafers |
US5558563A (en) | 1995-02-23 | 1996-09-24 | International Business Machines Corporation | Method and apparatus for uniform polishing of a substrate |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5609718A (en) | 1995-09-29 | 1997-03-11 | Micron Technology, Inc. | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5690540A (en) | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6203407B1 (en) * | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Method and apparatus for increasing-chemical-polishing selectivity |
-
1998
- 1998-09-03 US US09/146,733 patent/US6203407B1/en not_active Expired - Lifetime
-
2001
- 2001-03-07 US US09/800,711 patent/US6325702B2/en not_active Expired - Fee Related
- 2001-09-24 US US09/961,624 patent/US6893325B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050032462A1 (en) * | 2003-08-07 | 2005-02-10 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
US7160178B2 (en) | 2003-08-07 | 2007-01-09 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
US20050106834A1 (en) * | 2003-11-03 | 2005-05-19 | Andry Paul S. | Method and apparatus for filling vias |
US7449067B2 (en) * | 2003-11-03 | 2008-11-11 | International Business Machines Corporation | Method and apparatus for filling vias |
Also Published As
Publication number | Publication date |
---|---|
US6325702B2 (en) | 2001-12-04 |
US6893325B2 (en) | 2005-05-17 |
US20020072302A1 (en) | 2002-06-13 |
US6203407B1 (en) | 2001-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6325702B2 (en) | Method and apparatus for increasing chemical-mechanical-polishing selectivity | |
EP0907460B1 (en) | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers | |
US5855804A (en) | Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints | |
KR100579538B1 (en) | Method for fabricating semiconductor device | |
US6645865B2 (en) | Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes | |
US6238271B1 (en) | Methods and apparatus for improved polishing of workpieces | |
KR100471527B1 (en) | Polishing body, polisher, polishing method, and method for producing semiconductor device | |
US5665202A (en) | Multi-step planarization process using polishing at two different pad pressures | |
US6524961B1 (en) | Semiconductor device fabricating method | |
KR20010049587A (en) | Retaining ring for chemical mechanical polishing and methods of use thereof | |
US7070480B2 (en) | Method and apparatus for polishing substrates | |
US6648743B1 (en) | Chemical mechanical polishing pad | |
US20030082997A1 (en) | Method and apparatus for controlling CMP pad surface finish | |
EP0888846B1 (en) | Method for wafer polishing and method for polishing-pad dressing | |
US6620035B2 (en) | Grooved rollers for a linear chemical mechanical planarization system | |
US6315645B1 (en) | Patterned polishing pad for use in chemical mechanical polishing of semiconductor wafers | |
US20040009637A1 (en) | CMP device and production method for semiconductor device | |
EP1349703B1 (en) | Belt polishing device with double retainer ring | |
US6143663A (en) | Employing deionized water and an abrasive surface to polish a semiconductor topography | |
US6200896B1 (en) | Employing an acidic liquid and an abrasive surface to polish a semiconductor topography | |
US20070049184A1 (en) | Retaining ring structure for enhanced removal rate during fixed abrasive chemical mechanical polishing | |
JP2004502311A (en) | Projection type gimbal point drive | |
JP3823308B2 (en) | Semiconductor device polishing apparatus and polishing pad | |
Simpson et al. | Fixed abrasive technology for STI CMP on a web format tool |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20131204 |