US20010014537A1 - Method and apparatus for planarization of a substrate - Google Patents
Method and apparatus for planarization of a substrate Download PDFInfo
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- US20010014537A1 US20010014537A1 US09/782,442 US78244201A US2001014537A1 US 20010014537 A1 US20010014537 A1 US 20010014537A1 US 78244201 A US78244201 A US 78244201A US 2001014537 A1 US2001014537 A1 US 2001014537A1
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- housing
- fluid
- polishing
- pad
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 title claims description 21
- 239000012530 fluid Substances 0.000 claims abstract description 83
- 238000005498 polishing Methods 0.000 claims abstract description 77
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 230000001105 regulatory effect Effects 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000006260 foam Substances 0.000 claims description 7
- 238000012544 monitoring process Methods 0.000 claims 4
- 230000004043 responsiveness Effects 0.000 claims 4
- 239000007787 solid Substances 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 abstract description 2
- 239000000945 filler Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- the present invention relates generally to mechanical polishing of a semiconductor substrate, and more particularly to a support pad for use in chemical-mechanical-polishing to planarize a substrate assembly.
- CMP chemical-mechanical-polishing
- Slurry a liquid chemical composition generally containing particulate
- the slurry conventionally is chemically active to remove unwanted material from the semiconductor wafer. This chemical activity may be changed during CMP processing.
- the slurry particulate facilitates abrasion.
- the semiconductor wafer is polished without slurry by using a “fixed-abrasive polishing pad.”
- a “fixed-abrasive polishing pad” has protrusions formed on it to facilitate abrasion. The semiconductor wafer is thus held and rotated against the protrusions on the fixed-abrasive polishing pad.
- CMP may be used to planarize a surface of a semiconductor wafer.
- a uniform planar surface is important for subsequent lithographic processing of the semiconductor wafer, mainly due to depth of focus limitations of lithographic equipment. Accordingly, to achieve a substantially uniformly planar surface, it is important to apply pressure uniformly.
- a problem has been a lack of uniform pressure resulting in a non-uniform planar surface (e.g. a wedge-like shape).
- the present invention provides method and apparatus for CMP with a support pad to provide a more uniform application of force to polish a semiconductor substrate.
- a support pad is formed with a housing.
- the housing defines a volume in which an open-cell material, disposed in the volume, is coupled to the housing to limit deformation of the volume.
- a fluid is disposed in the volume to affect rigidity of the support pad.
- the fluid may be in a gaseous and/or a liquid state and may be pressurized.
- the housing may be attached to or in contact with a CMP wafer carrier, a CMP platen, and/or a CMP polishing pad.
- a CMP wafer carrier, platen, and/or pad may be used in combination with the housing in defining a volume in which an open-cell material and fluid is contained.
- inlet and outlet tubes may be employed for providing the fluid in and out of the volume.
- ingress and egress of fluid may be used for thermal control.
- Baffling or webbing may be located within the volume to regulate fluid flow, to maintain pressurization, and/or to limit volume deformation.
- a support pad in accordance with the present invention may be a sealed unit to better cope with a harsh CMP environment; such a support pad may easily be removed and replaced. Moreover, a sealed pad may be pressurized to a desired level for a CMP operation. Alternatively, one or more tubes may be employed for in situ maintenance and/or adjustment of support pad rigidity.
- FIG. 1 is a cross-sectional view of an exemplary portion of a CMP systems in accordance with the present invention.
- FIG. 2 is a cross-sectional view of an exemplary portion of an embodiment of a support pad structure in accordance with the present invention.
- FIG. 3 is a cross-sectional view of an exemplary portion of an alternate embodiment of support pad structure in accordance with the present invention.
- FIG. 4 is a cross-sectional view of an exemplary portion of a wafer carrier assembly in accordance with the present invention.
- FIG. 5 is a block diagram of an exemplary portion of an embodiment of a fluid control system in accordance with the present invention.
- CMP system 10 comprises motors 24 and 25 , support pads 11 , drive shafts 14 and 15 , polishing pad 12 , platen 13 , wafer carrier housing 16 , and retaining ring 17 .
- Motors 24 and 25 may be employed to rotatively drive shafts 15 and 14 , respectively.
- Drive shafts 14 and 15 may be hollow, such that cavities, as indicated by dashed lines 80 and 81 , may house tubing to transport fluids to and from support pads 11 , as will become apparent.
- a support pad 11 may be located below polishing pad 12 , and/or between wafer carrier 16 and substrate assembly 23 .
- substrate assembly it should be understood to include a bare substrate or wafer, as well as a substrate having one or more layers and/or features formed thereon and/or therein.
- Support pad 40 comprises a non-rigid housing 33 , filler 39 , inlet tube 31 and outlet tube 32 .
- housing 33 comprises upper layer 37 , lower layer 36 , and at least one outer or side layer 38 .
- Layers 36 , 37 , and 38 may be made from polycarbonate, polyurethane, or other suitable material.
- Upper layer 37 includes inner top surface 98
- bottom layer 36 includes inner bottom surface 99 .
- Layers 36 and 37 may be bonded, clamped, fused, glued, epoxied, and in like manner attached or coupled to layer 38 , filler 39 , and/or webbing 68 (shown in FIG. 3) to limit ballooning of volume 100 and/or housing 33 .
- layers 36 , 37 , and 38 may be integrally formed as one unitized housing 33 .
- Filler 39 may be formed after at least partial formation of housing 33 in order to substantially fill volume 100 .
- filler 39 may be prefabricated for fitting into volume 100 .
- Filler 39 may be formed of an open-cell material.
- open-cell material it is meant a matrix having adjacent, suspended voids (“open-cells”).
- matrix with embedded voids is gas or liquid permeable, and more particularly is capable of providing at least one conduit for transmitting a fluid from a proximal surface to a distal surface.
- Materials used in forming open-cell structures include polymers, monomers, elastomers, carbon, silicon.
- open-cell material examples include polyurethane, polypropylene, polyethylene, polyolefin, polychloroprene, rubber, synthetic-rubber, among others. Each substance may be used in forming a sponge-like material as is well known. An open-cell foam with sufficient rigidity to withstand downward polish force may be employed.
- Inlet tube 31 and/or outlet tube 32 may be removed or omitted where support pad 40 has a sealed volume, as indicated by dash lines 28 and 29 .
- inlet tube 31 may be used for dispensing a fluid into volume 100 defined by housing 33 . After such dispensing is completed, inlet tube 31 may be sealed (fused, glued, epoxies, bonded, and the like) to form a sealed volume.
- a sealed volume support pad may be more beneficial for implementations where it is rotated during CMP.
- hollow drive shafts 14 , 15 may meet holes in platen 13 and/or wafer carrier 16 , as indicated by dashed lines 80 and 81 .
- Such configurations may be employed at least in part to house one or more tubes 31 and/or 32 .
- Inlet tube 31 and outlet tube 32 may comprise one or more tubes for transporting fluid to and from volume 100 . Furthermore, inlet tube 31 and outlet tube 32 in combination may form a manifold having one or more tubing branches or alternatively open-cell material may be configured to provide a manifold, as illustratively indicated by dashed lines 188 .
- FIG. 3 there is shown a cross-sectional view of an exemplary portion of an alternate embodiment of a support pad 50 in accordance with the present invention.
- Support pad 50 is similar to support pad 40 of FIG. 2, except bottom layer 36 has been omitted, webbing 68 has been added to form baffles, and tubes 31 and 32 have been reoriented.
- Bottom layer 36 may be omitted in place of top surface 89 of platen 13 and/or bottom surface 88 of wafer carrier 16 (shown in FIG. 1).
- Outer layer 38 is attached to platen layer 13 and/or wafer carrier 16 depending on configuration to be employed.
- Webbing 68 which may have passages 86 , may be used to limit deformation of volume 100 , to regulate or direct fluid flow, and/or to maintain pressurization of filler 39 .
- Tubes 31 and 32 may be at least partially housed in either drive shaft 14 or 15 (shown in FIG. 1). Seals 83 may be employed to limit or prevent fluid leakage.
- Wafer carrier assembly 70 includes an alternate embodiment of a sealed support pad 90 of the present invention.
- Open-cell foam 71 may have a skin forming at least a portion of housing 94 of sealed support pad 90 .
- open-cell foam 71 may be laminated at least in part to form at least a portion of housing 94 .
- corrugated webbing 72 may be used to form baffles to limit deformation of housing 94 .
- Webbing 72 may be attached to interior surfaces of housing 94 at one or more contact points 73 .
- FIG. 5 there is shown a block diagram of an exemplary portion of an embodiment of fluid control system 60 for use with support pad 40 in accordance with the present invention.
- Fluid is supplied from fluid supply 57 to pump 58 .
- Fluid is pumped from pump 58 along in-feed tubing 62 to support pad 40 , e.g., through inlet tube 31 (shown in FIG. 2).
- Controller-conditioner 59 may be used to monitor fluid pressure and/or temperature. If temperature is too high or too low, controller-conditioner 59 may divert fluid to temperature pump 56 in order to increase or decrease temperature of fluid 54 . In this manner, support pad 40 may be employed at least in part for temperature control during CMP. Controller-conditioner 59 in electrical communication with regulated pump 58 via path 63 may regulate pressure of fluid supplied to support pad 40 . Pressure may then be referenced to absolute pressure, atmospheric pressure, or polish downward force. In one embodiment, pressure ranges from approximately 1 to 100 p.s.i.
- the pressure should be selected to be greater than the polish downward force being applied.
- CMP downward force is typically in a range of approximately 1 to 10 p.s.i., a pressure in a range of approximately 2 to 20 p.s.i. may be employed therefor.
- Tubing 64 allows fluid 54 transfer between controller/conditioner 59 and pump 58 .
- the present invention may also be employed in a single-ended system.
- in-feed tubing 62 is used for ingress and egress of fluid 54 to support pad 40
- out-feed tubing 61 is omitted.
- Support pad 40 rigidity may be controlled at least in part by pressurization of volume 100 (shown in FIG. 2) by fluid 54 . Rigidity of support pad 40 may also be effected by the type of fluid selected. Fluid 54 may be in a liquid state, a colloidal (gelatinous) state, and/or a gaseous state. Moreover, gas may be introduced and at least partially dissolved in a liquid to adjust compressibility. Also, a support pad 11 (shown in FIG. 1) may be pressurized to volumetrically expand to maintain substrate assembly 23 in contact with CMP pad 12 for polishing.
- support pad rigidity may be controlled to affect material removal rate. Generally, a more rigid support pad will aid removal of more material than a less rigid support pad. Also, by controlling fluid flow through a support pad, temperature may be adjusted during CMP processing, including adjustment. Also, a support pad may be pressurized to compensate for changes in a downwardly directed force used in polishing a substrate assembly.
Abstract
Method and apparatus for a chemical-mechanical-polishing (CMP) support pad structure are described. The support pad structure is made with a housing to hold an open-cell material and a fluid. The fluid is supplied in a gaseous and/or a liquid state to affect rigidity of the pad. By controlling rigidity, material removal rates may be directly affected during CMP processing. Moreover, fluid flow through the support pad structure may be regulated to adjust temperature during CMP processing.
Description
- The present invention relates generally to mechanical polishing of a semiconductor substrate, and more particularly to a support pad for use in chemical-mechanical-polishing to planarize a substrate assembly.
- In the semiconductor industry, a technology known as chemical-mechanical-polishing (“CMP”) has been developed. In “CMP,” a semiconductor wafer is place between a polishing pad and a wafer carrier. The wafer carrier is a mechanical device used to provide rotation of and downward pressure on the semiconductor wafer. In this manner, the semiconductor wafer is forcibly held and rotated against the polishing pad. As a result, material is abraded from the surface of the semiconductor wafer in contact with the polishing pad.
- Slurry, a liquid chemical composition generally containing particulate, may be dispensed on the polishing pad. The slurry conventionally is chemically active to remove unwanted material from the semiconductor wafer. This chemical activity may be changed during CMP processing. The slurry particulate facilitates abrasion. Alternatively, the semiconductor wafer is polished without slurry by using a “fixed-abrasive polishing pad.” A “fixed-abrasive polishing pad” has protrusions formed on it to facilitate abrasion. The semiconductor wafer is thus held and rotated against the protrusions on the fixed-abrasive polishing pad.
- Aside from removing unwanted material, CMP may be used to planarize a surface of a semiconductor wafer. A uniform planar surface is important for subsequent lithographic processing of the semiconductor wafer, mainly due to depth of focus limitations of lithographic equipment. Accordingly, to achieve a substantially uniformly planar surface, it is important to apply pressure uniformly. A problem has been a lack of uniform pressure resulting in a non-uniform planar surface (e.g. a wedge-like shape).
- One approach to achieve greater pressure uniformity has been to place an underpad below the polishing pad. The underpad has more give than the polishing pad, and thus it distributes downward force from the wafer carrier more uniformly. However, conditions, such as temperature, applied force, and friction, change during CMP, and an underpad is not able to compensate for these changes.
- Another approach to achieve a more uniform downward force has been to use a wafer carrier having multiple bellows located between a wafer carrier housing and a wafer carrier base, as is described in U.S. Pat. No. 5,681,215 to Sherwood et al. As the semiconductor wafer is held between the polishing pad and the wafer carrier base, by pressurizing bellows against the wafer carrier housing, force is directed onto the wafer carrier base, which in turn pushes down on the semiconductor wafer. As each bellows may be separately pressurized, downward force is supposedly adjustable from location to location to improve uniformity; however, Sherwood et al is a mechanically complicated approach.
- Therefore, it would be desirable to have a CMP apparatus that is less mechanically complicated than Sherwood et al, but allows for rigidity adjustment unlike present day underpads. Furthermore, it would be desirable to have a CMP apparatus that is a disposable item like an underpad.
- The present invention provides method and apparatus for CMP with a support pad to provide a more uniform application of force to polish a semiconductor substrate. Such a support pad is formed with a housing. The housing defines a volume in which an open-cell material, disposed in the volume, is coupled to the housing to limit deformation of the volume. A fluid is disposed in the volume to affect rigidity of the support pad. The fluid may be in a gaseous and/or a liquid state and may be pressurized.
- The housing may be attached to or in contact with a CMP wafer carrier, a CMP platen, and/or a CMP polishing pad. Such a CMP wafer carrier, platen, and/or pad may be used in combination with the housing in defining a volume in which an open-cell material and fluid is contained. Moreover, inlet and outlet tubes may be employed for providing the fluid in and out of the volume. Such ingress and egress of fluid may be used for thermal control. Baffling or webbing may be located within the volume to regulate fluid flow, to maintain pressurization, and/or to limit volume deformation.
- A support pad in accordance with the present invention may be a sealed unit to better cope with a harsh CMP environment; such a support pad may easily be removed and replaced. Moreover, a sealed pad may be pressurized to a desired level for a CMP operation. Alternatively, one or more tubes may be employed for in situ maintenance and/or adjustment of support pad rigidity.
- Features and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiment(s) described below in detail with reference to the accompanying drawings where:
- FIG. 1 is a cross-sectional view of an exemplary portion of a CMP systems in accordance with the present invention.
- FIG. 2 is a cross-sectional view of an exemplary portion of an embodiment of a support pad structure in accordance with the present invention.
- FIG. 3 is a cross-sectional view of an exemplary portion of an alternate embodiment of support pad structure in accordance with the present invention.
- FIG. 4 is a cross-sectional view of an exemplary portion of a wafer carrier assembly in accordance with the present invention.
- FIG. 5 is a block diagram of an exemplary portion of an embodiment of a fluid control system in accordance with the present invention.
- Reference numbers refer to the same or equivalent parts of embodiment(s) of the present invention throughout the several figures of the drawing.
- Referring to FIG. 1, there is shown a cross-sectional view of an exemplary portion of a
CMP system 10.CMP system 10 comprisesmotors support pads 11,drive shafts polishing pad 12,platen 13,wafer carrier housing 16, and retainingring 17.Motors shafts Drive shafts dashed lines support pads 11, as will become apparent. - A
support pad 11, in accordance with the present invention, may be located belowpolishing pad 12, and/or betweenwafer carrier 16 andsubstrate assembly 23. By “substrate assembly,” it should be understood to include a bare substrate or wafer, as well as a substrate having one or more layers and/or features formed thereon and/or therein. - Several embodiments of
support pads 11 are explained in more detail below, where it will become apparent that by employing a support pad of the present invention, a substantially uniformly distributed pressure may be obtained. - Referring now to FIG. 2, there is shown a cross-sectional view of an exemplary portion of an embodiment of a
support pad 40 in accordance with the present invention.Support pad 40 comprises anon-rigid housing 33,filler 39,inlet tube 31 andoutlet tube 32. - In defining
volume 100,housing 33 comprisesupper layer 37,lower layer 36, and at least one outer orside layer 38.Layers Upper layer 37 includesinner top surface 98, andbottom layer 36 includesinner bottom surface 99.Layers layer 38,filler 39, and/or webbing 68 (shown in FIG. 3) to limit ballooning ofvolume 100 and/orhousing 33. Alternatively,layers housing 33.Filler 39 may be formed after at least partial formation ofhousing 33 in order to substantially fillvolume 100. Alternatively,filler 39 may be prefabricated for fitting intovolume 100.Filler 39 may be formed of an open-cell material. By open-cell material, it is meant a matrix having adjacent, suspended voids (“open-cells”). In accordance with an embodiment of the present invention, matrix with embedded voids is gas or liquid permeable, and more particularly is capable of providing at least one conduit for transmitting a fluid from a proximal surface to a distal surface. Materials used in forming open-cell structures include polymers, monomers, elastomers, carbon, silicon. Some materials for forming open-cell material include polyurethane, polypropylene, polyethylene, polyolefin, polychloroprene, rubber, synthetic-rubber, among others. Each substance may be used in forming a sponge-like material as is well known. An open-cell foam with sufficient rigidity to withstand downward polish force may be employed. -
Inlet tube 31 and/oroutlet tube 32 may be removed or omitted wheresupport pad 40 has a sealed volume, as indicated bydash lines inlet tube 31 may be used for dispensing a fluid intovolume 100 defined byhousing 33. After such dispensing is completed,inlet tube 31 may be sealed (fused, glued, epoxies, bonded, and the like) to form a sealed volume. A sealed volume support pad may be more beneficial for implementations where it is rotated during CMP. - With reference to FIG. 1,
hollow drive shafts platen 13 and/orwafer carrier 16, as indicated by dashedlines more tubes 31 and/or 32. -
Inlet tube 31 andoutlet tube 32 may comprise one or more tubes for transporting fluid to and fromvolume 100. Furthermore,inlet tube 31 andoutlet tube 32 in combination may form a manifold having one or more tubing branches or alternatively open-cell material may be configured to provide a manifold, as illustratively indicated by dashedlines 188. - Referring to FIG. 3, there is shown a cross-sectional view of an exemplary portion of an alternate embodiment of a
support pad 50 in accordance with the present invention.Support pad 50 is similar to supportpad 40 of FIG. 2, exceptbottom layer 36 has been omitted, webbing 68 has been added to form baffles, andtubes Bottom layer 36 may be omitted in place oftop surface 89 ofplaten 13 and/orbottom surface 88 of wafer carrier 16 (shown in FIG. 1).Outer layer 38 is attached toplaten layer 13 and/orwafer carrier 16 depending on configuration to be employed.Webbing 68, which may havepassages 86, may be used to limit deformation ofvolume 100, to regulate or direct fluid flow, and/or to maintain pressurization offiller 39.Tubes shaft 14 or 15 (shown in FIG. 1).Seals 83 may be employed to limit or prevent fluid leakage. - Referring to FIG. 4, there is shown a cross-sectional view of an exemplary portion of an embodiment of a
wafer carrier assembly 70 in accordance with the present invention.Wafer carrier assembly 70 includes an alternate embodiment of a sealedsupport pad 90 of the present invention. Open-cell foam 71 may have a skin forming at least a portion ofhousing 94 of sealedsupport pad 90. Alternatively, open-cell foam 71 may be laminated at least in part to form at least a portion ofhousing 94. Also,corrugated webbing 72 may be used to form baffles to limit deformation ofhousing 94.Webbing 72 may be attached to interior surfaces ofhousing 94 at one or more contact points 73. - Referring now to FIG. 5, there is shown a block diagram of an exemplary portion of an embodiment of
fluid control system 60 for use withsupport pad 40 in accordance with the present invention. Fluid is supplied fromfluid supply 57 to pump 58. Fluid is pumped frompump 58 along in-feed tubing 62 to supportpad 40, e.g., through inlet tube 31 (shown in FIG. 2). - Exiting fluid flows from
support pad 40, through out-feed tubing 61 to controller-conditioner 59. Controller-conditioner 59 may be used to monitor fluid pressure and/or temperature. If temperature is too high or too low, controller-conditioner 59 may divert fluid totemperature pump 56 in order to increase or decrease temperature offluid 54. In this manner,support pad 40 may be employed at least in part for temperature control during CMP. Controller-conditioner 59 in electrical communication withregulated pump 58 viapath 63 may regulate pressure of fluid supplied to supportpad 40. Pressure may then be referenced to absolute pressure, atmospheric pressure, or polish downward force. In one embodiment, pressure ranges from approximately 1 to 100 p.s.i. However, while not wishing to be bound by any particular theory, it is believed that the pressure should be selected to be greater than the polish downward force being applied. As CMP downward force is typically in a range of approximately 1 to 10 p.s.i., a pressure in a range of approximately 2 to 20 p.s.i. may be employed therefor.Tubing 64 allowsfluid 54 transfer between controller/conditioner 59 andpump 58. - Notably, the present invention may also be employed in a single-ended system. In which system, in-
feed tubing 62 is used for ingress and egress offluid 54 to supportpad 40, and out-feed tubing 61 is omitted. -
Support pad 40 rigidity may be controlled at least in part by pressurization of volume 100 (shown in FIG. 2) byfluid 54. Rigidity ofsupport pad 40 may also be effected by the type of fluid selected.Fluid 54 may be in a liquid state, a colloidal (gelatinous) state, and/or a gaseous state. Moreover, gas may be introduced and at least partially dissolved in a liquid to adjust compressibility. Also, a support pad 11 (shown in FIG. 1) may be pressurized to volumetrically expand to maintainsubstrate assembly 23 in contact withCMP pad 12 for polishing. - In accordance with the present invention, during CMP, support pad rigidity may be controlled to affect material removal rate. Generally, a more rigid support pad will aid removal of more material than a less rigid support pad. Also, by controlling fluid flow through a support pad, temperature may be adjusted during CMP processing, including adjustment. Also, a support pad may be pressurized to compensate for changes in a downwardly directed force used in polishing a substrate assembly.
- The present invention has been particularly shown and described with respect to certain preferred embodiment(s). It should be readily apparent to those of ordinary skill in the art that various changes and modifications in form and detail may be made without departing from the spirit and scope of the present invention as set forth in the appended claims.
Claims (39)
1. In a chemical-mechanical-polishing system having a platen and a polishing pad, an arrangement comprising:
a support pad disposed between said platen and said polishing pad, said support pad comprising:
a housing, said housing defining a chamber;
a matrix having voids therein, said matrix located within said chamber;
a fluid disposed within said chamber; and
said matrix permeable with respect to said fluid.
2. The arrangement of , wherein said chamber is pressurized by said fluid, said fluid in at least one of a gaseous state, a gelatinous state, and a liquid state.
claim 1
3. The arrangement of , wherein pressure in said chamber is in a range of approximately 1 to 100 p.s.i.
claim 2
4. The arrangement of , wherein said matrix is coupled to said housing to limit deformation of said chamber.
claim 1
5. In a chemical-mechanical-polishing system having a platen and a polishing pad, an arrangement comprising:
a support pad disposed between said platen and said polishing pad, said support pad comprising:
a housing, said housing defining a volume;
a webbing located within said volume and coupled to said housing to limit deformation of said volume; and
a fluid disposed within said volume.
6. The arrangement of , wherein said housing is pressurized by said fluid.
claim 5
7. The arrangement of , wherein pressure in said volume is in a range of approximately 1 to 100 p.s.i.
claim 6
8. The arrangement of , wherein said webbing provides baffling within said volume of said housing.
claim 5
9. In a chemical-mechanical-polishing system having a platen and a polishing pad, an arrangement comprising:
a support pad disposed between said platen and said polishing pad, said support pad comprising:
a pressurizable member having variable deformability, said pressurizable member providing an enclosure;
a matrix having voids therein, said matrix located within said enclosure;
a webbing located within said enclosure and coupled to said pressurizable member to limit deformation thereof;
a fluid disposed within said enclosure; and
said matrix permeable with respect to said fluid.
10. The arrangement of , wherein said matrix is coupled to said pressurizable member to limit deformation of said enclosure.
claim 9
11. The arrangement of , further comprising at least one tube operatively coupled to deliver said fluid to said enclosure.
claim 9
12. The arrangement of , further comprising:
claim 9
an inlet tube operatively coupled to deliver said fluid to said enclosure; and
an outlet tube operatively coupled to remove said fluid from said enclosure.
13. The arrangement of , wherein said webbing provides baffling for regulating transmission of said fluid from said inlet tube to said outlet tube.
claim 12
14. In a chemical-mechanical-polishing system having a platen and a polishing pad, an arrangement comprising:
a support pad disposed between said platen and said polishing pad, said support pad comprising:
a housing, said housing defining a volume;
an open-cell material located within said volume;
a fluid disposed within said volume;
an inlet tube operatively coupled to deliver said fluid to said volume;
a manifold operatively coupled to said inlet tube to receive said fluid and to distribute said fluid in said volume; and
an outlet tube operatively coupled to said manifold to remove said fluid from said volume.
15. The arrangement of , wherein said open-cell material is configured to provide said manifold.
claim 14
16. In a chemical-mechanical-polishing system having a platen and a polishing pad, a support pad comprising:
a housing, said housing having a top layer and at least one side layer;
a surface of said platen, said top layer, and said side layer in combination defining a space;
a fluid located within said space; and
a porous solid member, permeable with respect to said fluid, located in said space and coupled to said housing to limit deformation of said space.
17. In a chemical-mechanical-polishing system having a wafer carrier, a support pad comprising:
a flexible structural member, said flexible structural member having a bottom layer and at least one side layer;
a surface of said wafer carrier, said bottom layer, and said side layer in combination defining an enclosure;
a fluid located within said enclosure; and
a porous solid member, permeable with respect to said fluid, located within saud enclosure, said porous solid member coupled to said flexible structural member and to said wafer carrier to limit deformation of said enclosure.
18. In a chemical-mechanical-polishing system having a platen and a polishing pad, a support pad comprising:
a housing, said housing having a top layer and at least one side layer;
a surface of said platen, said top layer, and said side layer in combination defining a volume;
webbing located within said volume and coupled to said housing and said platen to limit deformation of said volume; and
a fluid located within said volume.
19. In a chemical-mechanical-polishing system having a wafer carrier, a support pad comprising:
a housing, said housing having a bottom layer and at least one side layer;
a surface of said wafer carrier, said bottom layer, and said side layer in combination defining a volume;
webbing located within said volume and coupled to said housing and said wafer carrier to limit deformation of said volume; and
a fluid located within said volume.
20. An apparatus for use in planarizing a semiconductor substrate assembly, comprising:
a chemical-mechanical-polishing pad;
a housing, said housing having a bottom layer and at least one side layer;
a surface of said chemical-mechanical-polishing pad, said bottom layer, and said side layer in combination defining a volume;
a fluid located within said volume; and
a porous solid member, permeable with respect to said fluid, located within said volume and coupled to said chemical-mechanical-polishing pad and said housing to limit expansion of said volume.
21. An apparatus for use in planarizing a semiconductor substrate assembly, comprising:
a chemical-mechanical-polishing pad;
a housing, said housing having a bottom layer and at least one side layer;
a surface of said chemical-mechanical-polishing pad, said bottom layer, and said side layer in combination defining a volume;
webbing located within said volume and coupled to said housing and said chemical-mechanical-polishing pad to limit expansion of said volume; and
a fluid located within said volume.
22. In a chemical-mechanical-polishing system having a platen and a polishing pad, an arrangement comprising:
a support pad disposed between said platen and said polishing pad, said support pad comprising:
a polymeric open-cell foam, said polymeric open-cell foam having a skin, said skin defining an enclosed region;
a fluid disposed within said enclosed region.
23. In a chemical-mechanical-polishing system having a platen and a polishing pad, an arrangement comprising:
a support pad disposed between said platen and said polishing pad, said support pad comprising:
elastomeric open-cell foam, said elastomeric open-cell foam having a skin, said skin defining an enclosed region; and
a fluid disposed within said enclosed region.
24. In a chemical-mechanical-polishing system having a platen and a polishing pad, a method for thermal control during substrate assembly planarization, comprising:
providing a pad structure, said pad structure having a housing, said housing having an inlet tube and an outlet tube, said pad structure having a sponge-like material disposed within said housing;
locating said pad structure between said polishing pad and said platen;
providing fluid to said housing through said inlet tube;
removing said fluid from said housing through said outlet tube;
monitoring temperature of said fluid; and
adjusting temperature of said fluid during said planarization.
25. In a chemical-mechanical-polishing system having a platen and a polishing pad, a method for adjusting responsiveness of said polishing pad during planarization of a substrate assembly, comprising:
providing a pad structure, said pad structure having a housing, said housing having an inlet tube and an outlet tube, said pad structure having a sponge-like material disposed within said housing;
locating said pad structure between said polishing pad and said platen;
providing fluid to said housing through said inlet tube;
removing said fluid from said housing through said outlet tube;
monitoring pressure of said fluid; and
adjusting pressure of said fluid during said planarization.
26. The method of , wherein said pressure is maintained in a range of approximately 1 to 100 p.s.i.
claim 25
27. The method of , wherein said pressure is maintained in a range of approximately 2 to 20 p.s.i.
claim 25
28. The method of , wherein said pressure is at or above a polishing force pressure.
claim 25
29. The method of , wherein said polishing force pressure is in a range of approximately 1 to 10 p.s.i.
claim 28
30. In a chemical-mechanical-polishing system having a wafer carrier, a method for thermal control during polishing, comprising:
providing a pad structure, said pad structure having a housing, said housing having an inlet tube and an outlet tube, said pad structure having an sponge-like material disposed within said housing;
locating said pad structure in operative proximity to said wafer carrier;
providing fluid to said housing through said inlet tube;
removing said fluid from said housing through said outlet tube;
monitoring temperature of said fluid; and
adjusting temperature of said fluid during said polishing.
31. In a chemical-mechanical-polishing system having a wafer carrier, a method for adjusting responsiveness of a polishing pad during planarization of a substrate assembly, comprising:
providing a pad structure, said pad structure having a housing, said housing having an inlet tube and an outlet tube, said pad structure having a sponge-like material disposed within said housing;
locating said pad structure in operative proximity to said wafer carrier;
providing fluid to said housing through said inlet tube;
removing said fluid from said housing through said outlet tube;
monitoring pressure of said fluid; and
adjusting pressure of said fluid during said planarization.
32. The method of , wherein said pressure is in a range of approximately 1 to 100 p.s.i.
claim 31
33. The method of , wherein said pressure is in a range of approximately 2 to 20 p.s.i.
claim 31
34. The method of , wherein said pressure is at or above a polishing force pressure.
claim 31
35. The method of , wherein said polishing force pressure is in a range of approximately 1 to 10 p.s.i.
claim 34
36. In a chemical-mechanical-polishing system having a platen and a polishing pad, a method for thermal control during polishing of a substrate assembly, comprising:
providing a pad structure having a housing;
locating said pad structure in near proximity to said substrate assembly for thermal conductivity thereto;
providing fluid to and from said housing; and
varying temperature of said fluid during said polishing.
37. In a chemical-mechanical-polishing (CMP) system having a platen and a polishing pad, a method for adjusting responsiveness of said CMP system during polishing of a substrate assembly, comprising:
providing a pad structure having a housing;
providing fluid to and from said housing; and
varying pressure of said fluid to said housing during said polishing.
38. In a chemical-mechanical-polishing system having a platen and a polishing pad, a method for thermal influence on a substrate assembly, comprising:
providing a pad structure having a housing;
locating said pad structure in near proximity to said substrate assembly for thermal conductivity thereto;
providing fluid to and from said housing; and
varying temperature of said fluid.
39. In a chemical-mechanical-polishing (CMP) system, a method for adjusting responsiveness of said CMP system for polishing a substrate assembly, comprising:
providing a pad structure having a housing;
providing fluid to and from said housing; and
varying pressure of said fluid to said housing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/782,442 US6312558B2 (en) | 1998-10-14 | 2001-02-13 | Method and apparatus for planarization of a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/172,950 US6187681B1 (en) | 1998-10-14 | 1998-10-14 | Method and apparatus for planarization of a substrate |
US09/782,442 US6312558B2 (en) | 1998-10-14 | 2001-02-13 | Method and apparatus for planarization of a substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/172,950 Division US6187681B1 (en) | 1998-10-14 | 1998-10-14 | Method and apparatus for planarization of a substrate |
Publications (2)
Publication Number | Publication Date |
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US20010014537A1 true US20010014537A1 (en) | 2001-08-16 |
US6312558B2 US6312558B2 (en) | 2001-11-06 |
Family
ID=22629874
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US09/172,950 Expired - Lifetime US6187681B1 (en) | 1998-10-14 | 1998-10-14 | Method and apparatus for planarization of a substrate |
US09/782,442 Expired - Fee Related US6312558B2 (en) | 1998-10-14 | 2001-02-13 | Method and apparatus for planarization of a substrate |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US09/172,950 Expired - Lifetime US6187681B1 (en) | 1998-10-14 | 1998-10-14 | Method and apparatus for planarization of a substrate |
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US20150132865A1 (en) * | 2002-12-27 | 2015-05-14 | Fujitsu Limited | Method for forming bumps, semiconductor device and method for manufacturing same, substrate processing apparatus, and semiconductor manufacturing apparatus |
US20200276685A1 (en) * | 2019-02-28 | 2020-09-03 | Kevin H. Song | Controlling Chemical Mechanical Polishing Pad Stiffness By Adjusting Wetting in the Backing Layer |
Also Published As
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US6187681B1 (en) | 2001-02-13 |
US6312558B2 (en) | 2001-11-06 |
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