US20010006879A1 - Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates - Google Patents
Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates Download PDFInfo
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- US20010006879A1 US20010006879A1 US09/795,283 US79528301A US2001006879A1 US 20010006879 A1 US20010006879 A1 US 20010006879A1 US 79528301 A US79528301 A US 79528301A US 2001006879 A1 US2001006879 A1 US 2001006879A1
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- Prior art keywords
- pad
- platen
- support
- polishing pad
- support pad
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
Definitions
- the present invention is directed toward methods and apparatuses for supporting a polishing pad relative to a microelectronic substrate during mechanical and/or chemical-mechanical planarization.
- FIG. 1 is a partially schematic isometric view of a conventional web-format planarizing machine 10 that has a platen 20 .
- a sub-pad 50 is attached to the platen 20 to provide a flat, solid workstation for supporting a portion of a web-format planarizing pad 40 in a planarizing zone “A” during planarization.
- the planarizing machine 10 also has a pad-advancing mechanism, including a plurality of rollers, to guide, position, and hold the web-format pad 40 over the sub-pad 50 .
- the pad-advancing mechanism generally includes a supply roller 24 , first and second idler rollers 21 a and 21 b, first and second guide rollers 22 a and 22 b, and a take-up roller 23 .
- a motor (not shown) drives the take-up roller 23 to advance the pad 40 across the sub-pad 50 along a travel path T-T.
- the motor can also drive the supply roller 24 .
- the first idler roller 21 a and the first guide roller 22 a press an operative portion of the pad 40 against the sub-pad 50 to hold the pad 40 stationary during operation.
- the planarizing machine 10 also has a carrier assembly 30 to translate a substrate 12 over the polishing pad 40 .
- the carrier assembly 30 has a head 31 to pick up, hold and release the substrate 12 at appropriate stages of the planarizing process.
- the carrier assembly 30 also has a support gantry 34 and a drive assembly 35 that can move along the gantry 34 .
- the drive assembly 35 has an actuator 36 , a driveshaft 37 coupled to the actuator 36 , and an arm 38 projecting from the driveshaft 37 .
- the arm 38 carries the head 31 via a terminal shaft 39 .
- the actuator 36 orbits the head 31 about an axis B-B (as indicated by arrow R 1 ) and can rotate the head 31 (as indicated by arrow R 2 ) to move the substrate 12 over the polishing pad 40 while a planarizing fluid 43 flows from a plurality of nozzles 45 in the head 31 .
- the planarizing fluid 43 may be a conventional CMP slurry with abrasive particles and chemicals that etch and/or oxidize the substrate 12 , or the planarizing fluid 43 may be a non-abrasive planarizing solution without abrasive particles. In most CMP applications, conventional CMP slurries are used on conventional polishing pads, and planarizing solutions without abrasive particles are used on fixed-abrasive polishing pads.
- the polishing pad 40 moves across the sub-pad 50 along the travel path T-T either during or between planarizing cycles to change the particular portion of the polishing pad 40 in the planarizing zone A.
- the supply and take-up rollers 24 , 23 can drive the polishing pad 40 between planarizing cycles such that a point P moves incrementally across the sub-pad 50 to a number of intermediate locations I 1 , I 2 , etc.
- the rollers 24 , 23 may drive the polishing pad 40 between planarizing cycles such that the point P moves all the way across the sub-pad 50 to completely remove a used portion of the polishing pad 40 from the planarizing zone A.
- the rollers 24 , 23 may also continuously drive the polishing pad 40 at a slow rate during a planarizing cycle such that the point P moves continuously across the sub-pad 50 during planarization.
- the motion of the polishing pad 40 is generally relatively slow when the substrate 12 engages the polishing pad 40 and the relative motion between the substrate 12 and the polishing pad 40 is primarily due to the motion of the head 31 .
- One drawback with the apparatus shown in FIG. 1 is that debris can become caught between the polishing pad 40 and the sub-pad 50 .
- the debris can cause a local bump or other non-uniformity in the polishing pad 40 which can create a corresponding non-uniformity in the substrate 12 and/or can cause the polishing pad 40 to wear in a non-uniform manner.
- a further drawback is that the polishing pad 40 can adhere to the sub-pad 50 during planarization. This adhesive bond must be broken in order to advance the polishing pad 40 .
- the idler rollers 21 a, 21 b and/or the guide roller 22 a are actuated to move the polishing pad 40 normal to the upper surface of the sub-pad 50 and break the adhesive bond.
- moving the polishing pad 40 normal to the sub-pad 50 can flex the polishing pad 40 and cause cracks, pits, and other defects to form in the polishing pad 40 , which can in turn create non-uniformities in the planarized surface of the substrate 12 .
- polishing pad 40 and the sub-pad 50 can wear or abrade as they rub against each other. Accordingly, the polishing pad 40 and the sub-pad 50 may need to be replaced on a frequent basis and/or the polishing pad 40 may develop non-uniformities.
- FIG. 2 is a partially schematic side elevation view of one such conventional CMP apparatus 10 a having a continuous polishing pad 40 a extending around two rollers 25 .
- the polishing pad 40 a can be supported by a continuous support band 41 , formed from a flexible material, such as a thin sheet of stainless steel.
- a pair of platens 20 a provide additional support for the polishing pad 40 a at two opposing planarizing stations.
- Two carriers 30 a each aligned with one of the platens 20 a can each bias a substrate 12 against opposing outwardly-facing portions of a planarizing surface 42 a of the polishing pad 40 a.
- Devices such as the apparatus 10 a shown in FIG. 2 and having vertically oriented planarizing stations are available from Aplex, Inc. of Sunnyvale, Calif. under the name AVERATM.
- AVERATM Generally similar devices having a horizontally-oriented polishing pad 40 a and a single carrier 30 a are available from Lam Research Corporation of Fremont, Calif.
- the continuous polishing pad 40 a moves at a relatively high speed around the rollers 25 while the carriers 30 a press the substrates 12 against the polishing pad 40 a.
- An abrasive slurry is introduced to the planarizing surface 42 a of the polishing pad 40 a so that the slurry, in combination with the motion of the polishing pad 40 a relative to the substrates 12 , mechanically removes material from the substrates 12 .
- One drawback with the apparatus 10 a shown in FIG. 2 is that the polishing pad 40 a must move at a high speed to effectively planarize the substrates 12 .
- the high-speed polishing pad 40 a can present a safety hazard to personnel positioned nearby, for example, if the polishing pad 40 a should break, loosen, or otherwise malfunction during operation.
- Another drawback is that the combination of the polishing pad 40 a and the support band 41 may also wear more quickly than other polishing pads because both the planarizing surface 42 a of the polishing pad 40 a and a rear surface 44 of the support band 41 rub against relatively hard surfaces (i.e., the polishing pad 40 a rubs against the substrate 12 and the support band 41 rubs against the platen 20 a ).
- This drawback can be serious because, once a defect forms in the polishing pad 40 a, it can affect each subsequent substrate 12 .
- Still another drawback is that the interface between the support band 41 and the platens 20 a can be difficult to seal, due to the high speed of the support band 41 . Accordingly, the abrasive slurry can seep between and abrade the support band 41 and the platens 20 a.
- the present invention is directed to methods and apparatuses for planarizing microelectronic substrates.
- the apparatus can include a platen that supports a movable support pad which in turn supports a polishing pad against which the substrate is pressed to remove material from the substrate.
- the polishing pad can be an elongated web-format type pad that moves across the platen between or during planarizing cycles.
- the support pad can move at approximately the same rate as the polishing pad, reducing or eliminating relative motion between the two when they are in contact with each other and aligned with the platen.
- the apparatus can include cleaning and/or milling devices to treat the surfaces of the polishing pad and/or the support pad before they engage each other.
- the support pad can be a continuous loop or can extend from a supply roller to a take-up roller.
- the platen can also be in the form of a continuous loop or an elongated member that extends from a supply roller to a take-up roller and can be integrated with the support pad in a further aspect of the invention.
- the platen can be supported by rollers, fluid jets, or a pressurized bladder, and in yet a further aspect of the invention, can include orifices for directing fluid against the support pad to further reduce the likelihood for abrasive contact between the support pad and the platen.
- the support pad can be positioned between the platen and the polishing pad of a planarizing machine.
- the polishing pad can be moved at a first rate to move a first portion of the polishing pad into alignment with the platen while moving a second portion of the polishing pad out of alignment with the platen.
- the support pad can be moved at a second rate approximately the same as the first rate to engage a first portion of the support pad with the first portion of the polishing pad and disengage a second portion of the support pad from the second portion of the polishing pad.
- the platen can be movable along with the support pad and can be tensioned by directing a flow of fluid toward the platen, biasing a roller against the platen or pressing a bladder against the platen.
- FIG. 1 is a partially schematic, front isometric view of a web-format planarizing machine in accordance with the prior art.
- FIG. 2 is a partially schematic, side elevation view of a planarizing machine having a continuous polishing pad in accordance with the prior art.
- FIG. 3 is a partially schematic, side elevation view of a planarizing machine having a movable support pad in accordance with an embodiment of the invention.
- FIG. 4 is a partially schematic, side elevation view of a portion of the apparatus shown in FIG. 3.
- FIG. 5 is a partially schematic, side elevation view of a planarizing machine having a movable, non-continuous support pad in accordance with another embodiment of the invention.
- FIG. 6 is a partially schematic, side elevation view of a planarizing machine having a support pad coupled to a movable platen in accordance with yet another embodiment of the invention.
- FIG. 7 is a partially schematic, side elevation view of a planarizing machine having a segmented platen in accordance with still another embodiment of the invention.
- FIG. 8 is a partially schematic, partial cross-sectional side elevation view of a planarizing machine having a movable, non-continuous platen supported by a rotating bladder in accordance with another embodiment of the invention.
- the present invention is directed towards methods and apparatuses for planarizing microelectronic substrates and/or substrate assemblies. Many specific details of certain embodiments of the invention are set forth in the following description and in FIGS. 3 - 8 to provide a thorough understanding of such embodiments. One skilled in the art, however, will understand that the present invention may have additional embodiments, or that the invention may be practiced without several of the details described in the following description.
- FIG. 3 is a partially schematic, side elevation view of a planarizing machine 110 having a polishing pad 140 supported on a moving support pad 150 .
- the polishing pad 140 can extend from a supply roller 124 across a platen 120 to a take-up roller 123 , while being controlled and guided by two idler rollers 121 a, 121 b and two guide rollers 122 a, 122 b, generally as was discussed above.
- the polishing pad 140 can have a planarizing surface 142 facing toward a substrate or substrate assembly 112 and a back surface 141 facing opposite the planarizing surface 142 .
- a carrier assembly 130 positioned adjacent the polishing pad 140 can include a head 131 that biases the substrate 112 against the polishing pad 140 during operation.
- An actuator 135 can move the head 131 relative to the polishing pad 140 to remove material from the substrate 112 .
- the polishing pad 140 can advance from the supply roller 124 to the take-up roller 123 either between or during planarization cycles, in a manner generally similar to that discussed above.
- the support pad 150 fits between the back surface 141 of the polishing pad 140 and a support surface 125 of the platen 120 , and can move with the polishing pad 140 across the platen 120 .
- the support pad 150 forms a continuous loop that extends around two support pad rollers 151 (shown as a left roller 151 a and a right roller 151 b ) positioned on opposite sides of the platen 120 .
- An upper leg of the loop moves from left to right along with the polishing pad 140 (as indicated by arrow 145 ) and a lower leg of the loop moves from right to left (as indicated by arrow 146 ).
- the support pad rollers 151 are rotatable but unpowered, and the frictional force between the polishing pad 140 and the support pad 150 is sufficient to slide the support pad 140 over the platen 120 as the polishing pad 140 advances from the supply roller 124 to the take-up roller 123 .
- either or both of the support pad rollers 151 can be powered.
- the support pad 150 can move relative to the platen 120 at approximately the same rate as does the polishing pad 140 so that the portion of the support pad 150 between the polishing pad 140 and the platen 120 is generally fixed relative to the polishing pad 140 .
- the apparatus 110 can include cleaning devices 170 and a milling device 180 that treat the polishing pad 140 and the support pad 150 before they come together on the platen 120 . Further details of the structure and operation of the cleaning devices 170 , the milling device 180 and the support pad 150 will be discussed below with reference to FIG. 4.
- FIG. 4 is a detailed side elevation view of a portion of the apparatus 110 shown in FIG. 3.
- the support pad 150 can include a pad body 160 having a composite structure with an inner layer 152 facing toward the platen 120 , an outer layer 153 facing opposite the inner layer 152 , and a core 154 between the inner and outer layers 152 , 153 .
- the inner and outer layers 152 , 153 can include a relatively rigid, incompressible material, such as fiberglass or Mylar®
- the core 154 can include a relatively flexible or compressible material, such as a gel or a foam, including, for example, a urethane foam.
- the pad body 160 can have a uniform composition that can include either a relatively compressible material or a relatively incompressible material.
- the support pad 150 can reduce the effect of contaminants on the uniformity of the planarizing surface 142 .
- the support pad 150 when the support pad 150 is at least partially compressible, it can flex to reduce the effect on the planarizing surface 142 of a contaminant trapped between the support pad 150 and the platen 120 .
- the support pad 150 is more rigid, it can distribute the effect of the contaminant over a large area, which can also reduce the effect of the contaminant on the uniformity of the planarizing surface 142 .
- the support pad 150 can reduce the effect of contaminants that might be positioned between the support pad 150 and the platen 120 , as discussed above.
- the cleaning devices 170 shown as a fluid system 170 a and a brush 170 b
- the milling device 180 can reduce the likelihood for contaminants to become trapped between the support pad 150 and the polishing pad 140 by treating the surfaces of the polishing pad 140 and/or the support pad 150 before the two engage each other and pass over the platen 120 .
- the fluid system 170 a can include a manifold 171 having a plurality of apertures 173 (shown as an upward-facing aperture 173 a facing toward the polishing pad 140 and a downward-facing aperture 173 b facing toward the support pad 150 ).
- the manifold 171 can be coupled with a conduit 172 to a fluid source (not shown), such as a source of liquid or gas.
- a fluid source such as a source of liquid or gas.
- the fluid can be pumped through the manifold 171 and the orifices 173 to impinge on and wash contaminants from the polishing pad 140 and the support pad 150 .
- the manifold 171 can be coupled to both a liquid source and a gas source to clean the polishing pad 140 and the support pad 150 with liquid and then dry the polishing pad 140 and the support pad 150 with the gas.
- the conduit 172 can be coupled to a vacuum source (not shown) for removing the contaminants under the force of a vacuum.
- the brush 170 b can include bristles 174 facing toward the polishing pad 140 and/or the support pad 150 to scrub contaminants therefrom.
- the brush 170 b can be coupled to an actuator (not shown) to move the brush 170 b into engagement with the polishing pad 140 and/or the support pad 150 during a cleaning cycle and out of engagement after the cleaning cycle is complete.
- both the brush 170 b and the fluid system 170 a can be positioned adjacent the outer layer 153 .
- the brush 170 b can include bristles 174 adjacent the inner layer 152 and the fluid system 170 a can include orifices 173 directed toward the inner layer 152 for removing contaminants from the inner layer 152 .
- the milling device 180 can include a head 181 having sharpened surfaces 183 for removing a layer of material from the support pad 150 .
- the head 181 can be coupled to an actuator 182 that moves the head 181 into and out of engagement with the support pad 150 and that rotates or otherwise moves the head 181 in the plane of the support pad 150 for removing material from the support pad 150 .
- the head 181 can be positioned adjacent to the outer layer 153 of the support pad 150 to form a smooth surface at the outer layer (for example, if the outer layer 153 becomes abraded during use).
- the head 181 can be positioned proximate to the inner layer 152 of the support pad 150 which may become abraded as a result of contact with the platen 120 .
- one head 181 can be positioned adjacent the inner layer 152 and a second head 181 can be positioned adjacent the outer layer 153 to smooth both opposite facing surfaces of the support pad 150 .
- the polishing pad 140 moves over the platen 120 from the supply roller 124 (FIG. 3) to the take-up roller 123 (FIG. 3), either between or during planarizing cycles.
- an incoming portion C of the polishing pad 140 moves into alignment with the platen 120 so that it is positioned directly opposite the support surface 125 of the platen 120 .
- an outgoing portion D of the polishing pad 140 moves out of alignment with the platen 120 .
- the support pad 150 moves at approximately the same rate so that an incoming portion E of the support pad 150 moves into alignment with the platen 120 between the platen 120 and the polishing pad 140 , and an outgoing portion F of the support pad 150 moves out of alignment with the platen 120 .
- the incoming portion E of the support pad 150 supports the incoming portion C of the polishing pad 140 relative to the platen 120 while the carrier assembly 130 (FIG. 3) presses the substrate 112 (FIG. 3) against the polishing pad 140 .
- One feature of the apparatus 110 shown in FIGS. 3 and 4 is that the support pad 150 moves together with the polishing pad 140 relative to the platen 120 .
- One advantage of this feature is that the polishing pad 140 will not wear as a result of relative motion with the support pad 150 because the two move together at approximately the same rate when they are in contact with each other. Any wear due to relative motion with the platen 120 is instead borne by the support pad 150 , which bears against the fixed platen 120 .
- the support pad 150 can include materials selected for abrasion resistance, or alternatively, the support pad 150 can include relatively inexpensive materials that may not be particularly wear-resistant, but are economical to replace.
- Another advantage is that it is not necessary to move the guide rollers 122 (FIG. 3) and/or the idler rollers 121 (FIG. 3) normal to the polishing pad 140 to force the polishing pad 140 out of engagement with the support pad 150 . Instead, the polishing pad 140 and the support pad 150 separate from each other as the polishing pad 140 passes over the first guide roller 122 a and the support pad 150 diverges and passes over the right roller 151 b.
- the interfacing surfaces of the polishing pad 140 and the support pad 150 can diverge even if the interfacing surfaces are wet, so that the interfacing surfaces can be cleansed with a liquid without substantially affecting the manner in which the support pad 150 separates from the polishing pad 140 .
- the cleaning device 170 can reduce the likelihood for contaminants to become lodged between the polishing pad 140 and the support pad 150 , and the milling device 180 can increase the planarity of the support pad 150 . Accordingly, the polishing pad 140 and the support pad 150 can be less likely to develop bulges or other non-uniformities that reduce the planarity of the planarizing surface 142 and therefore the substrate 112 . Furthermore, should contaminants become trapped between the support pad 150 and the platen 120 , the effect of such contaminants on the planarizing surface 142 can be reduced (compared to the effect of a contaminant trapped between a polishing pad and a support pad, such as is shown in FIG. 1) because the support pad 150 can either flex to accommodate the contaminant or distribute the effect of the contaminant over a large area.
- FIG. 5 is a partially schematic, side elevation view of a planarizing apparatus 210 having a non-continuous support pad 250 that supports a polishing pad 240 in accordance with another embodiment of the invention.
- the polishing pad 240 can advance from a supply roller 224 , past idler rollers 221 a, 221 b and to a take-up roller 223 in a manner generally similar to that discussed above with reference to FIGS. 3 and 4.
- the support pad 250 is initially wound on a first roller 251 a and extends across a platen 220 to a second roller 251 b.
- Support pad idler rollers 255 a and 255 b can tension the support pad 250 against a support surface 225 of the platen 220 .
- the support pad 250 can unwind from the first roller 251 a across the platen 220 and onto the second roller 251 b in a manner generally similar to that discussed above with reference to the polishing pad 140 shown in FIGS. 3 and 4.
- the second roller 251 b is powered to wind the support pad 250 .
- both the first and second rollers 251 can be powered. In either case, the roller(s) 251 can advance the support pad 250 across the platen 220 at approximately the same rate as the polishing pad 240 advances across the platen 220 .
- the support pad 250 can be disposed of once it is completely wound up on the second roller 251 b.
- the support pad 250 can be rewound onto the first roller 251 a and reused.
- the support pad 250 can have a length approximately the same as the length of the polishing pad 240 (in one embodiment), so that the polishing pad 240 and the support pad 250 become completely wound up on their respective rollers at approximately the same time. Accordingly, the polishing pad 240 and the support pad 250 can be changed or rewound at the same time.
- the platen 220 can include a manifold 226 having perforations or orifices 229 extending through the support surface 225 adjacent to the support pad 250 .
- the manifold 226 can be coupled with a conduit 227 to a source of pressurized liquid or gas 228 .
- the source 228 can supply liquid or gas to the manifold 226 and through the orifices 229 at a rate sufficient to separate at least a portion of the support pad 250 from the support surface 225 . Accordingly, the size and spacing of the orifices 227 and the pressure of the fluid from the source 228 can be selected to separate the support pad 250 from the support surface 225 by a selected amount.
- the support pad 250 can have orifices aligned with the orifices of the manifold so that the pressurized liquid or gas can separate the polishing pad from the support pad.
- the non-continuous support pad 250 can include relatively inexpensive materials so that the support pad 250 can be economically replaced at the same time as the polishing pad 240 .
- a feature of the continuous support pad 150 (FIGS. 3 and 4) is that it can last through several polishing pads 140 and/or several cycles of a single polishing pad 140 .
- FIG. 6 is a partially schematic, side elevation view of an apparatus 310 having a continuous support pad 350 integrated with a continuous platen 320 in accordance with another embodiment of the invention.
- the continuous support pad 350 can include materials generally similar to those discussed above with reference to FIGS. 3 and 4 and can move into and out of engagement with a polishing pad 340 in a manner generally similar to that discussed above with reference to FIGS. 3 and 4.
- the platen 320 can include a continuous loop formed from a generally incompressible, relatively flexible material, such as a thin stainless steel sheet and can carry the support pad 350 over and around support pad rollers 351 (shown as a left support pad roller 351 a and a right support pad roller 351 b ).
- the support pad 350 and the platen 320 can be tensioned over the support pad rollers 351 by a tensioning device, such as an idler roller 355 that presses upwardly against the lower leg of the loop formed by the support pad 350 and the platen 320 .
- a tensioning device such as an idler roller 355 that presses upwardly against the lower leg of the loop formed by the support pad 350 and the platen 320 .
- other devices can provide a flat surface that supports the polishing pad 340 .
- the apparatus 310 can include a manifold 311 having a plurality of jet orifices 315 directed upwardly toward a back side 326 of the upper leg of the loop.
- the manifold 311 can be coupled to a conduit 316 , which is in turn coupled to a source of pressurized fluid, such as pressurized water or pressurized air which is forced through the orifices 315 to tension the platen 320 and the support pad 350 .
- a source of pressurized fluid such as pressurized water or pressurized air which is forced through the orifices 315 to tension the platen 320 and the support pad 350 .
- the manifold 311 can be positioned adjacent the lower leg of the loop (at approximately the location of the idler roller 355 ) with the jet orifices 315 directed upwardly against the lower leg in addition to or in lieu of the idler roller 355 .
- An advantage of tensioning the lower leg is that the upper leg is less likely to bow upwardly.
- One feature of the apparatus 310 shown in FIG. 6 is that it eliminates relative motion between the support pad 350 and the platen 320 . Accordingly, an advantage of the apparatus 310 is that it can reduce the wear on the support pad 350 , which can increase the life of the support pad 350 and reduce the frequency with which the support pad 350 may need to be replaced. A further advantage is that by integrating the support pad 350 with the platen 320 , the apparatus 310 can eliminate the possibility for contaminants to become caught between the support pad 350 and the platen 320 , further reducing the likelihood that contaminants can reduce the planarity of the polishing pad 340 .
- FIG. 7 is a partially schematic, side elevation view of an apparatus 410 having a segmented platen 420 connected to a support pad 450 , both of which support a polishing pad 440 in accordance with another embodiment of the invention.
- the platen 420 can include a plurality of links 427 pivotally coupled to each other with pins 428 to form a continuous loop extending around two rollers 451 (shown as a left roller 451 a and a right roller 451 b ) generally in the manner of a chain or tank trend.
- the rollers 451 can each include teeth 456 to engage the links 427 and align the links 427 as they pass over the rollers 451 .
- the platen 420 can include other segmented arrangements and the roller can include other corresponding features for guiding the platen 420 .
- the apparatus 410 can also include a plurality of support rollers 458 positioned between the rollers 451 along the upper leg of the loop formed by the platen 420 and support pad 450 to support the platen 420 and the support pad 450 in the region between the rollers 451 .
- An idler roller 455 can be positioned adjacent the lower leg of the loop to bias the platen 420 and the support pad 450 upwardly and tension these components relative to the rollers 451 , either in addition to or in lieu of the support rollers 458 .
- the support pad 450 can include a plurality of segments 457 , each separately attached to one of the links 427 .
- the segments 457 can be closely spaced to provide a nearly continuous support surface for the polishing pad 440 .
- the support pad 450 can be continuous, for example, by making the connection between the support pad 450 and the links 427 flexible and/or making the support pad 450 itself flexible, so that the support pad 450 can bend around the rollers 451 .
- both the polishing pad 440 and the support pad 450 can be elongated, non-continuous pads that extend between corresponding supply rollers and take-up rollers, generally as discussed above with reference to FIG. 5.
- the support pad 450 can be removed and/or replaced without removing the platen 420 .
- the support pad 450 can engage with and disengage from the polishing pad 440 (which unwinds from a supply roll 424 and winds up onto a take-up roller 423 ) in a manner generally similar to that discussed above with reference to FIGS. 3 and 4.
- FIG. 8 is a partially schematic, partial cross-sectional side elevation view of a planarizing machine 510 having a movable, non-continuous platen 520 supported by a rotating bladder 590 in accordance with another embodiment of the invention.
- the bladder 590 can be formed from an at least partially fluid tight membrane folded upon itself to define an interior region 594 filled with a fluid, such as water or air.
- the bladder 590 has a cross-sectional shape that forms a loop having an upper leg 591 adjacent the platen 520 and a lower leg 592 opposite the upper leg 591 .
- the upper leg 591 can support the platen 520 and can move from left to right as indicated by arrow 545 along with the platen 520 as the platen 520 unwinds from a supply roller 544 to a take-up roller 543 .
- the lower leg 592 of the bladder 590 can move from right to left as indicated by arrow 546 and can be supported by a plurality of bladder rollers 593 that rotatably engage the lower leg 592 . Accordingly, the bladder 590 can bias the platen 520 to a flat position while minimizing abrasive contact between the platen 520 and the bladder 590 because the two move at the same rate when they are in contact with each other.
- the apparatus 510 can further include a non-continuous support pad 550 that unwinds from a supply roller 551 a and winds up onto a take-up roller 551 b.
- the apparatus 510 can further include a non-continuous polishing pad 540 that extends from a supply roller 524 to a take-up roller 523 .
- the platen 520 , the support pad 550 and the polishing pad 540 can each pass over separate left idler rollers 521 a and right idler rollers 521 b and can come together over a left guide roller 522 a before passing over the bladder 590 .
- the platen 520 , the support pad 550 and the polishing pad 540 can pass over a right guide roller 522 b, from which the platen 520 , the support pad 550 and the polishing pad 540 diverge.
- the platen 520 can form a continuous loop that extends annularly around the bladder 590 .
- the support pad 550 can be integrated with the platen 520 , in a manner similar to that discussed above with reference to FIGS. 6 or 7 .
- one feature of the apparatus 510 is that the polishing pad 540 , the support pad 550 , the platen 520 , and the bladder 590 each move at approximately the same linear rate when they are in contact with each other. Accordingly, the likelihood for abrasion between these components (which can reduce the expected service life of the components), can be significantly reduced in comparison to some conventional devices.
- the apparatus 510 can also include a cleaning device (such as the devices 170 discussed above with reference to FIG. 4) and/or a milling device (such as the device 180 discussed above with reference to FIG. 4) positioned between the polishing pad 540 and the support pad 550 , the support pad 550 and the platen 520 , and/or the platen 520 and the bladder 590 .
- a cleaning device such as the devices 170 discussed above with reference to FIG. 4
- a milling device such as the device 180 discussed above with reference to FIG.
Abstract
Description
- The present invention is directed toward methods and apparatuses for supporting a polishing pad relative to a microelectronic substrate during mechanical and/or chemical-mechanical planarization.
- Mechanical and chemical-mechanical planarizing processes (collectively “CMP”) are used in the manufacturing of microelectronic devices for forming a flat surface on semiconductor wafers, field emission displays, and many other microelectronic-device substrates and substrate assemblies. FIG. 1 is a partially schematic isometric view of a conventional web-
format planarizing machine 10 that has aplaten 20. Asub-pad 50 is attached to theplaten 20 to provide a flat, solid workstation for supporting a portion of a web-format planarizingpad 40 in a planarizing zone “A” during planarization. The planarizingmachine 10 also has a pad-advancing mechanism, including a plurality of rollers, to guide, position, and hold the web-format pad 40 over thesub-pad 50. The pad-advancing mechanism generally includes asupply roller 24, first andsecond idler rollers second guide rollers up roller 23. As explained below, a motor (not shown) drives the take-up roller 23 to advance thepad 40 across thesub-pad 50 along a travel path T-T. The motor can also drive thesupply roller 24. Thefirst idler roller 21 a and thefirst guide roller 22 a press an operative portion of thepad 40 against thesub-pad 50 to hold thepad 40 stationary during operation. - The planarizing
machine 10 also has acarrier assembly 30 to translate asubstrate 12 over thepolishing pad 40. In one embodiment, thecarrier assembly 30 has ahead 31 to pick up, hold and release thesubstrate 12 at appropriate stages of the planarizing process. Thecarrier assembly 30 also has asupport gantry 34 and adrive assembly 35 that can move along thegantry 34. Thedrive assembly 35 has anactuator 36, adriveshaft 37 coupled to theactuator 36, and anarm 38 projecting from thedriveshaft 37. Thearm 38 carries thehead 31 via aterminal shaft 39. Theactuator 36 orbits thehead 31 about an axis B-B (as indicated by arrow R1) and can rotate the head 31 (as indicated by arrow R2) to move thesubstrate 12 over thepolishing pad 40 while aplanarizing fluid 43 flows from a plurality ofnozzles 45 in thehead 31. The planarizingfluid 43 may be a conventional CMP slurry with abrasive particles and chemicals that etch and/or oxidize thesubstrate 12, or the planarizingfluid 43 may be a non-abrasive planarizing solution without abrasive particles. In most CMP applications, conventional CMP slurries are used on conventional polishing pads, and planarizing solutions without abrasive particles are used on fixed-abrasive polishing pads. - In the operation of the planarizing
machine 10, thepolishing pad 40 moves across thesub-pad 50 along the travel path T-T either during or between planarizing cycles to change the particular portion of thepolishing pad 40 in the planarizing zone A. For example, the supply and take-up rollers polishing pad 40 between planarizing cycles such that a point P moves incrementally across thesub-pad 50 to a number of intermediate locations I1, I2, etc. Alternatively, therollers polishing pad 40 between planarizing cycles such that the point P moves all the way across thesub-pad 50 to completely remove a used portion of thepolishing pad 40 from the planarizing zone A. Therollers polishing pad 40 at a slow rate during a planarizing cycle such that the point P moves continuously across thesub-pad 50 during planarization. In any case, the motion of thepolishing pad 40 is generally relatively slow when thesubstrate 12 engages thepolishing pad 40 and the relative motion between thesubstrate 12 and thepolishing pad 40 is primarily due to the motion of thehead 31. - One drawback with the apparatus shown in FIG. 1 is that debris can become caught between the
polishing pad 40 and thesub-pad 50. The debris can cause a local bump or other non-uniformity in thepolishing pad 40 which can create a corresponding non-uniformity in thesubstrate 12 and/or can cause thepolishing pad 40 to wear in a non-uniform manner. - A further drawback is that the
polishing pad 40 can adhere to thesub-pad 50 during planarization. This adhesive bond must be broken in order to advance thepolishing pad 40. In one conventional method, theidler rollers guide roller 22 a are actuated to move thepolishing pad 40 normal to the upper surface of thesub-pad 50 and break the adhesive bond. However, moving thepolishing pad 40 normal to thesub-pad 50 can flex thepolishing pad 40 and cause cracks, pits, and other defects to form in thepolishing pad 40, which can in turn create non-uniformities in the planarized surface of thesubstrate 12. - Another drawback is that the
polishing pad 40 and thesub-pad 50 can wear or abrade as they rub against each other. Accordingly, thepolishing pad 40 and thesub-pad 50 may need to be replaced on a frequent basis and/or thepolishing pad 40 may develop non-uniformities. - One conventional CMP apparatus which may address some of the foregoing drawbacks includes a polishing pad that forms a continuous loop and that moves a high speed relative to the substrate, in the manner of a belt sander. FIG. 2 is a partially schematic side elevation view of one such
conventional CMP apparatus 10 a having acontinuous polishing pad 40 a extending around tworollers 25. Thepolishing pad 40 a can be supported by acontinuous support band 41, formed from a flexible material, such as a thin sheet of stainless steel. A pair ofplatens 20 a provide additional support for thepolishing pad 40 a at two opposing planarizing stations. Twocarriers 30 a, each aligned with one of theplatens 20 a can each bias asubstrate 12 against opposing outwardly-facing portions of a planarizingsurface 42 a of thepolishing pad 40 a. Devices such as theapparatus 10 a shown in FIG. 2 and having vertically oriented planarizing stations are available from Aplex, Inc. of Sunnyvale, Calif. under the name AVERA™. Generally similar devices having a horizontally-orientedpolishing pad 40 a and asingle carrier 30 a are available from Lam Research Corporation of Fremont, Calif. - During operation, the
continuous polishing pad 40 a moves at a relatively high speed around therollers 25 while thecarriers 30 a press thesubstrates 12 against thepolishing pad 40 a. An abrasive slurry is introduced to theplanarizing surface 42 a of thepolishing pad 40 a so that the slurry, in combination with the motion of thepolishing pad 40 a relative to thesubstrates 12, mechanically removes material from thesubstrates 12. - One drawback with the
apparatus 10 a shown in FIG. 2 is that thepolishing pad 40 a must move at a high speed to effectively planarize thesubstrates 12. The high-speed polishing pad 40 a can present a safety hazard to personnel positioned nearby, for example, if thepolishing pad 40 a should break, loosen, or otherwise malfunction during operation. - Another drawback is that the combination of the
polishing pad 40 a and thesupport band 41 may also wear more quickly than other polishing pads because both theplanarizing surface 42 a of thepolishing pad 40 a and arear surface 44 of thesupport band 41 rub against relatively hard surfaces (i.e., thepolishing pad 40 a rubs against thesubstrate 12 and thesupport band 41 rubs against theplaten 20 a). This drawback can be serious because, once a defect forms in thepolishing pad 40 a, it can affect eachsubsequent substrate 12. - Still another drawback is that the interface between the
support band 41 and theplatens 20 a can be difficult to seal, due to the high speed of thesupport band 41. Accordingly, the abrasive slurry can seep between and abrade thesupport band 41 and theplatens 20 a. - The present invention is directed to methods and apparatuses for planarizing microelectronic substrates. In one aspect of the invention, the apparatus can include a platen that supports a movable support pad which in turn supports a polishing pad against which the substrate is pressed to remove material from the substrate. The polishing pad can be an elongated web-format type pad that moves across the platen between or during planarizing cycles. The support pad can move at approximately the same rate as the polishing pad, reducing or eliminating relative motion between the two when they are in contact with each other and aligned with the platen.
- In one aspect of the invention, the apparatus can include cleaning and/or milling devices to treat the surfaces of the polishing pad and/or the support pad before they engage each other. The support pad can be a continuous loop or can extend from a supply roller to a take-up roller. The platen can also be in the form of a continuous loop or an elongated member that extends from a supply roller to a take-up roller and can be integrated with the support pad in a further aspect of the invention. The platen can be supported by rollers, fluid jets, or a pressurized bladder, and in yet a further aspect of the invention, can include orifices for directing fluid against the support pad to further reduce the likelihood for abrasive contact between the support pad and the platen.
- In a method in accordance with an aspect of the invention, at least part of the support pad can be positioned between the platen and the polishing pad of a planarizing machine. The polishing pad can be moved at a first rate to move a first portion of the polishing pad into alignment with the platen while moving a second portion of the polishing pad out of alignment with the platen. The support pad can be moved at a second rate approximately the same as the first rate to engage a first portion of the support pad with the first portion of the polishing pad and disengage a second portion of the support pad from the second portion of the polishing pad. In one aspect of the invention, the platen can be movable along with the support pad and can be tensioned by directing a flow of fluid toward the platen, biasing a roller against the platen or pressing a bladder against the platen.
- FIG. 1 is a partially schematic, front isometric view of a web-format planarizing machine in accordance with the prior art.
- FIG. 2 is a partially schematic, side elevation view of a planarizing machine having a continuous polishing pad in accordance with the prior art.
- FIG. 3 is a partially schematic, side elevation view of a planarizing machine having a movable support pad in accordance with an embodiment of the invention.
- FIG. 4 is a partially schematic, side elevation view of a portion of the apparatus shown in FIG. 3.
- FIG. 5 is a partially schematic, side elevation view of a planarizing machine having a movable, non-continuous support pad in accordance with another embodiment of the invention.
- FIG. 6 is a partially schematic, side elevation view of a planarizing machine having a support pad coupled to a movable platen in accordance with yet another embodiment of the invention.
- FIG. 7 is a partially schematic, side elevation view of a planarizing machine having a segmented platen in accordance with still another embodiment of the invention.
- FIG. 8 is a partially schematic, partial cross-sectional side elevation view of a planarizing machine having a movable, non-continuous platen supported by a rotating bladder in accordance with another embodiment of the invention.
- The present invention is directed towards methods and apparatuses for planarizing microelectronic substrates and/or substrate assemblies. Many specific details of certain embodiments of the invention are set forth in the following description and in FIGS.3-8 to provide a thorough understanding of such embodiments. One skilled in the art, however, will understand that the present invention may have additional embodiments, or that the invention may be practiced without several of the details described in the following description.
- FIG. 3 is a partially schematic, side elevation view of a
planarizing machine 110 having apolishing pad 140 supported on a movingsupport pad 150. Thepolishing pad 140 can extend from asupply roller 124 across aplaten 120 to a take-uproller 123, while being controlled and guided by twoidler rollers guide rollers polishing pad 140 can have aplanarizing surface 142 facing toward a substrate orsubstrate assembly 112 and aback surface 141 facing opposite theplanarizing surface 142. Acarrier assembly 130 positioned adjacent thepolishing pad 140 can include ahead 131 that biases thesubstrate 112 against thepolishing pad 140 during operation. Anactuator 135 can move thehead 131 relative to thepolishing pad 140 to remove material from thesubstrate 112. Thepolishing pad 140 can advance from thesupply roller 124 to the take-uproller 123 either between or during planarization cycles, in a manner generally similar to that discussed above. - The
support pad 150 fits between theback surface 141 of thepolishing pad 140 and asupport surface 125 of theplaten 120, and can move with thepolishing pad 140 across theplaten 120. For example, in one embodiment, thesupport pad 150 forms a continuous loop that extends around two support pad rollers 151 (shown as aleft roller 151 a and aright roller 151 b) positioned on opposite sides of theplaten 120. An upper leg of the loop moves from left to right along with the polishing pad 140 (as indicated by arrow 145) and a lower leg of the loop moves from right to left (as indicated by arrow 146). In one aspect of this embodiment, the support pad rollers 151 are rotatable but unpowered, and the frictional force between thepolishing pad 140 and thesupport pad 150 is sufficient to slide thesupport pad 140 over theplaten 120 as thepolishing pad 140 advances from thesupply roller 124 to the take-uproller 123. Alternatively, either or both of the support pad rollers 151 can be powered. In any case, thesupport pad 150 can move relative to theplaten 120 at approximately the same rate as does thepolishing pad 140 so that the portion of thesupport pad 150 between thepolishing pad 140 and theplaten 120 is generally fixed relative to thepolishing pad 140. - The
apparatus 110 can includecleaning devices 170 and amilling device 180 that treat thepolishing pad 140 and thesupport pad 150 before they come together on theplaten 120. Further details of the structure and operation of thecleaning devices 170, themilling device 180 and thesupport pad 150 will be discussed below with reference to FIG. 4. - FIG. 4 is a detailed side elevation view of a portion of the
apparatus 110 shown in FIG. 3. As shown in FIG. 4, thesupport pad 150 can include apad body 160 having a composite structure with aninner layer 152 facing toward theplaten 120, anouter layer 153 facing opposite theinner layer 152, and acore 154 between the inner andouter layers outer layers core 154 can include a relatively flexible or compressible material, such as a gel or a foam, including, for example, a urethane foam. Alternatively, thepad body 160 can have a uniform composition that can include either a relatively compressible material or a relatively incompressible material. In any case, thesupport pad 150 can reduce the effect of contaminants on the uniformity of theplanarizing surface 142. For example, when thesupport pad 150 is at least partially compressible, it can flex to reduce the effect on theplanarizing surface 142 of a contaminant trapped between thesupport pad 150 and theplaten 120. When thesupport pad 150 is more rigid, it can distribute the effect of the contaminant over a large area, which can also reduce the effect of the contaminant on the uniformity of theplanarizing surface 142. - The
support pad 150 can reduce the effect of contaminants that might be positioned between thesupport pad 150 and theplaten 120, as discussed above. The cleaning devices 170 (shown as afluid system 170 a and abrush 170 b) and themilling device 180 can reduce the likelihood for contaminants to become trapped between thesupport pad 150 and thepolishing pad 140 by treating the surfaces of thepolishing pad 140 and/or thesupport pad 150 before the two engage each other and pass over theplaten 120. For example, thefluid system 170 a can include a manifold 171 having a plurality of apertures 173 (shown as an upward-facingaperture 173 a facing toward thepolishing pad 140 and a downward-facingaperture 173 b facing toward the support pad 150). The manifold 171 can be coupled with aconduit 172 to a fluid source (not shown), such as a source of liquid or gas. The fluid can be pumped through the manifold 171 and the orifices 173 to impinge on and wash contaminants from thepolishing pad 140 and thesupport pad 150. For example, the manifold 171 can be coupled to both a liquid source and a gas source to clean thepolishing pad 140 and thesupport pad 150 with liquid and then dry thepolishing pad 140 and thesupport pad 150 with the gas. Alternatively, theconduit 172 can be coupled to a vacuum source (not shown) for removing the contaminants under the force of a vacuum. - The
brush 170 b can includebristles 174 facing toward thepolishing pad 140 and/or thesupport pad 150 to scrub contaminants therefrom. In one aspect of this embodiment, thebrush 170 b can be coupled to an actuator (not shown) to move thebrush 170 b into engagement with thepolishing pad 140 and/or thesupport pad 150 during a cleaning cycle and out of engagement after the cleaning cycle is complete. In one embodiment, both thebrush 170 b and thefluid system 170 a can be positioned adjacent theouter layer 153. Alternatively, thebrush 170 b can includebristles 174 adjacent theinner layer 152 and thefluid system 170 a can include orifices 173 directed toward theinner layer 152 for removing contaminants from theinner layer 152. - The
milling device 180 can include ahead 181 having sharpenedsurfaces 183 for removing a layer of material from thesupport pad 150. Thehead 181 can be coupled to anactuator 182 that moves thehead 181 into and out of engagement with thesupport pad 150 and that rotates or otherwise moves thehead 181 in the plane of thesupport pad 150 for removing material from thesupport pad 150. In one aspect of this embodiment, thehead 181 can be positioned adjacent to theouter layer 153 of thesupport pad 150 to form a smooth surface at the outer layer (for example, if theouter layer 153 becomes abraded during use). Alternatively, thehead 181 can be positioned proximate to theinner layer 152 of thesupport pad 150 which may become abraded as a result of contact with theplaten 120. In another embodiment, onehead 181 can be positioned adjacent theinner layer 152 and asecond head 181 can be positioned adjacent theouter layer 153 to smooth both opposite facing surfaces of thesupport pad 150. - In operation, the
polishing pad 140 moves over theplaten 120 from the supply roller 124 (FIG. 3) to the take-up roller 123 (FIG. 3), either between or during planarizing cycles. As thepolishing pad 140 advances over theplaten 120, an incoming portion C of thepolishing pad 140 moves into alignment with theplaten 120 so that it is positioned directly opposite thesupport surface 125 of theplaten 120. At the same time, an outgoing portion D of thepolishing pad 140 moves out of alignment with theplaten 120. As thepolishing pad 140 moves relative to theplaten 120, thesupport pad 150 moves at approximately the same rate so that an incoming portion E of thesupport pad 150 moves into alignment with theplaten 120 between theplaten 120 and thepolishing pad 140, and an outgoing portion F of thesupport pad 150 moves out of alignment with theplaten 120. The incoming portion E of thesupport pad 150 supports the incoming portion C of thepolishing pad 140 relative to theplaten 120 while the carrier assembly 130 (FIG. 3) presses the substrate 112 (FIG. 3) against thepolishing pad 140. - One feature of the
apparatus 110 shown in FIGS. 3 and 4 is that thesupport pad 150 moves together with thepolishing pad 140 relative to theplaten 120. One advantage of this feature is that thepolishing pad 140 will not wear as a result of relative motion with thesupport pad 150 because the two move together at approximately the same rate when they are in contact with each other. Any wear due to relative motion with theplaten 120 is instead borne by thesupport pad 150, which bears against the fixedplaten 120. Accordingly, thesupport pad 150 can include materials selected for abrasion resistance, or alternatively, thesupport pad 150 can include relatively inexpensive materials that may not be particularly wear-resistant, but are economical to replace. - Another advantage is that it is not necessary to move the guide rollers122 (FIG. 3) and/or the idler rollers 121 (FIG. 3) normal to the
polishing pad 140 to force thepolishing pad 140 out of engagement with thesupport pad 150. Instead, thepolishing pad 140 and thesupport pad 150 separate from each other as thepolishing pad 140 passes over thefirst guide roller 122 a and thesupport pad 150 diverges and passes over theright roller 151 b. The interfacing surfaces of thepolishing pad 140 and thesupport pad 150 can diverge even if the interfacing surfaces are wet, so that the interfacing surfaces can be cleansed with a liquid without substantially affecting the manner in which thesupport pad 150 separates from thepolishing pad 140. - Yet another feature of the
apparatus 110 is that thecleaning device 170 can reduce the likelihood for contaminants to become lodged between thepolishing pad 140 and thesupport pad 150, and themilling device 180 can increase the planarity of thesupport pad 150. Accordingly, thepolishing pad 140 and thesupport pad 150 can be less likely to develop bulges or other non-uniformities that reduce the planarity of theplanarizing surface 142 and therefore thesubstrate 112. Furthermore, should contaminants become trapped between thesupport pad 150 and theplaten 120, the effect of such contaminants on theplanarizing surface 142 can be reduced (compared to the effect of a contaminant trapped between a polishing pad and a support pad, such as is shown in FIG. 1) because thesupport pad 150 can either flex to accommodate the contaminant or distribute the effect of the contaminant over a large area. - FIG. 5 is a partially schematic, side elevation view of a
planarizing apparatus 210 having anon-continuous support pad 250 that supports apolishing pad 240 in accordance with another embodiment of the invention. Thepolishing pad 240 can advance from asupply roller 224, pastidler rollers roller 223 in a manner generally similar to that discussed above with reference to FIGS. 3 and 4. Thesupport pad 250 is initially wound on afirst roller 251 a and extends across aplaten 220 to asecond roller 251 b. Support padidler rollers support pad 250 against asupport surface 225 of theplaten 220. Accordingly, thesupport pad 250 can unwind from thefirst roller 251 a across theplaten 220 and onto thesecond roller 251 b in a manner generally similar to that discussed above with reference to thepolishing pad 140 shown in FIGS. 3 and 4. In one aspect of this embodiment, thesecond roller 251 b is powered to wind thesupport pad 250. Alternatively, both the first and second rollers 251 can be powered. In either case, the roller(s) 251 can advance thesupport pad 250 across theplaten 220 at approximately the same rate as thepolishing pad 240 advances across theplaten 220. - In one embodiment, the
support pad 250 can be disposed of once it is completely wound up on thesecond roller 251 b. Alternatively, thesupport pad 250 can be rewound onto thefirst roller 251 a and reused. In either case, thesupport pad 250 can have a length approximately the same as the length of the polishing pad 240 (in one embodiment), so that thepolishing pad 240 and thesupport pad 250 become completely wound up on their respective rollers at approximately the same time. Accordingly, thepolishing pad 240 and thesupport pad 250 can be changed or rewound at the same time. - In one embodiment, the
platen 220 can include a manifold 226 having perforations ororifices 229 extending through thesupport surface 225 adjacent to thesupport pad 250. The manifold 226 can be coupled with aconduit 227 to a source of pressurized liquid orgas 228. In operation, thesource 228 can supply liquid or gas to the manifold 226 and through theorifices 229 at a rate sufficient to separate at least a portion of thesupport pad 250 from thesupport surface 225. Accordingly, the size and spacing of theorifices 227 and the pressure of the fluid from thesource 228 can be selected to separate thesupport pad 250 from thesupport surface 225 by a selected amount. An advantage of this feature is that it can reduce the friction between thesupport pad 250 and theplaten 220 as thesupport pad 250 advances across theplaten 220. In an alternate arrangement, suitable for an apparatus having a fixed support pad such as the one shown in FIG. 1, the support pad can have orifices aligned with the orifices of the manifold so that the pressurized liquid or gas can separate the polishing pad from the support pad. - Another feature of the
apparatus 210 is that thenon-continuous support pad 250 can include relatively inexpensive materials so that thesupport pad 250 can be economically replaced at the same time as thepolishing pad 240. Conversely, a feature of the continuous support pad 150 (FIGS. 3 and 4) is that it can last through several polishingpads 140 and/or several cycles of asingle polishing pad 140. - FIG. 6 is a partially schematic, side elevation view of an
apparatus 310 having acontinuous support pad 350 integrated with acontinuous platen 320 in accordance with another embodiment of the invention. Thecontinuous support pad 350 can include materials generally similar to those discussed above with reference to FIGS. 3 and 4 and can move into and out of engagement with apolishing pad 340 in a manner generally similar to that discussed above with reference to FIGS. 3 and 4. Theplaten 320 can include a continuous loop formed from a generally incompressible, relatively flexible material, such as a thin stainless steel sheet and can carry thesupport pad 350 over and around support pad rollers 351 (shown as a leftsupport pad roller 351 a and a rightsupport pad roller 351 b). - In one embodiment, the
support pad 350 and theplaten 320 can be tensioned over the support pad rollers 351 by a tensioning device, such as anidler roller 355 that presses upwardly against the lower leg of the loop formed by thesupport pad 350 and theplaten 320. Alternatively, other devices can provide a flat surface that supports thepolishing pad 340. For example, in one embodiment, theapparatus 310 can include a manifold 311 having a plurality ofjet orifices 315 directed upwardly toward aback side 326 of the upper leg of the loop. The manifold 311 can be coupled to a conduit 316, which is in turn coupled to a source of pressurized fluid, such as pressurized water or pressurized air which is forced through theorifices 315 to tension theplaten 320 and thesupport pad 350. Alternatively, the manifold 311 can be positioned adjacent the lower leg of the loop (at approximately the location of the idler roller 355) with thejet orifices 315 directed upwardly against the lower leg in addition to or in lieu of theidler roller 355. An advantage of tensioning the lower leg is that the upper leg is less likely to bow upwardly. - One feature of the
apparatus 310 shown in FIG. 6 is that it eliminates relative motion between thesupport pad 350 and theplaten 320. Accordingly, an advantage of theapparatus 310 is that it can reduce the wear on thesupport pad 350, which can increase the life of thesupport pad 350 and reduce the frequency with which thesupport pad 350 may need to be replaced. A further advantage is that by integrating thesupport pad 350 with theplaten 320, theapparatus 310 can eliminate the possibility for contaminants to become caught between thesupport pad 350 and theplaten 320, further reducing the likelihood that contaminants can reduce the planarity of thepolishing pad 340. - FIG. 7 is a partially schematic, side elevation view of an
apparatus 410 having asegmented platen 420 connected to asupport pad 450, both of which support apolishing pad 440 in accordance with another embodiment of the invention. Theplaten 420 can include a plurality oflinks 427 pivotally coupled to each other withpins 428 to form a continuous loop extending around two rollers 451 (shown as aleft roller 451 a and aright roller 451 b) generally in the manner of a chain or tank trend. In one aspect of this embodiment, the rollers 451 can each includeteeth 456 to engage thelinks 427 and align thelinks 427 as they pass over the rollers 451. Alternatively, theplaten 420 can include other segmented arrangements and the roller can include other corresponding features for guiding theplaten 420. - In one embodiment, the
apparatus 410 can also include a plurality ofsupport rollers 458 positioned between the rollers 451 along the upper leg of the loop formed by theplaten 420 andsupport pad 450 to support theplaten 420 and thesupport pad 450 in the region between the rollers 451. Anidler roller 455 can be positioned adjacent the lower leg of the loop to bias theplaten 420 and thesupport pad 450 upwardly and tension these components relative to the rollers 451, either in addition to or in lieu of thesupport rollers 458. - In one embodiment, the
support pad 450 can include a plurality ofsegments 457, each separately attached to one of thelinks 427. Thesegments 457 can be closely spaced to provide a nearly continuous support surface for thepolishing pad 440. Alternatively, thesupport pad 450 can be continuous, for example, by making the connection between thesupport pad 450 and thelinks 427 flexible and/or making thesupport pad 450 itself flexible, so that thesupport pad 450 can bend around the rollers 451. In yet another alternate embodiment, both thepolishing pad 440 and thesupport pad 450 can be elongated, non-continuous pads that extend between corresponding supply rollers and take-up rollers, generally as discussed above with reference to FIG. 5. Accordingly, thesupport pad 450 can be removed and/or replaced without removing theplaten 420. In any case, thesupport pad 450 can engage with and disengage from the polishing pad 440 (which unwinds from asupply roll 424 and winds up onto a take-up roller 423) in a manner generally similar to that discussed above with reference to FIGS. 3 and 4. - FIG. 8 is a partially schematic, partial cross-sectional side elevation view of a
planarizing machine 510 having a movable,non-continuous platen 520 supported by a rotatingbladder 590 in accordance with another embodiment of the invention. Thebladder 590 can be formed from an at least partially fluid tight membrane folded upon itself to define aninterior region 594 filled with a fluid, such as water or air. Thebladder 590 has a cross-sectional shape that forms a loop having anupper leg 591 adjacent theplaten 520 and alower leg 592 opposite theupper leg 591. Theupper leg 591 can support theplaten 520 and can move from left to right as indicated byarrow 545 along with theplaten 520 as theplaten 520 unwinds from asupply roller 544 to a take-uproller 543. Thelower leg 592 of thebladder 590 can move from right to left as indicated byarrow 546 and can be supported by a plurality ofbladder rollers 593 that rotatably engage thelower leg 592. Accordingly, thebladder 590 can bias theplaten 520 to a flat position while minimizing abrasive contact between theplaten 520 and thebladder 590 because the two move at the same rate when they are in contact with each other. - In one embodiment, the
apparatus 510 can further include anon-continuous support pad 550 that unwinds from asupply roller 551 a and winds up onto a take-uproller 551 b. Theapparatus 510 can further include anon-continuous polishing pad 540 that extends from asupply roller 524 to a take-uproller 523. Theplaten 520, thesupport pad 550 and thepolishing pad 540 can each pass over separate leftidler rollers 521 a and rightidler rollers 521 b and can come together over aleft guide roller 522 a before passing over thebladder 590. After passing over thebladder 590, theplaten 520, thesupport pad 550 and thepolishing pad 540 can pass over aright guide roller 522 b, from which theplaten 520, thesupport pad 550 and thepolishing pad 540 diverge. - In an alternate arrangement, the
platen 520 can form a continuous loop that extends annularly around thebladder 590. In a further aspect of this embodiment, thesupport pad 550 can be integrated with theplaten 520, in a manner similar to that discussed above with reference to FIGS. 6 or 7. In any case, one feature of theapparatus 510 is that thepolishing pad 540, thesupport pad 550, theplaten 520, and thebladder 590 each move at approximately the same linear rate when they are in contact with each other. Accordingly, the likelihood for abrasion between these components (which can reduce the expected service life of the components), can be significantly reduced in comparison to some conventional devices. - The
apparatus 510 can also include a cleaning device (such as thedevices 170 discussed above with reference to FIG. 4) and/or a milling device (such as thedevice 180 discussed above with reference to FIG. 4) positioned between thepolishing pad 540 and thesupport pad 550, thesupport pad 550 and theplaten 520, and/or theplaten 520 and thebladder 590. Accordingly, another feature of the arrangement shown in FIG. 8 is that the likelihood for contaminants to become caught between thepolishing pad 540, thesupport pad 550 and/or theplaten 520 can be reduced in comparison to some to conventional devices, reducing the likelihood for creating non-uniformities at theplanarizing surface 542 and at the surface of thesubstrate 112. - From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. For example, certain features shown in the context of one embodiment of the invention may be incorporated in other embodiments as well. For instance, the
cleaning devices 170 and themilling device 180 shown in FIG. 4 may be used in connection with any of the planarizing machines shown in FIGS. 5-8. Theperforated platen 220 shown in FIG. 5 can be used in conjunction with thesupport pad 150 and polishingpad 140 shown in FIGS. 3 and 4. Any of the platen tensioning arrangements shown in FIGS. 6-8 can be used with any of the flexible or segmented platens shown in these Figures to provide a flat support surface. Accordingly, the invention is not limited except as by the appended claims.
Claims (105)
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US09/795,283 US6331139B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
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US09/387,065 US6273800B1 (en) | 1999-08-31 | 1999-08-31 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US09/795,283 US6331139B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
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US09/387,065 Division US6273800B1 (en) | 1999-08-31 | 1999-08-31 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
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US20010006879A1 true US20010006879A1 (en) | 2001-07-05 |
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US09/387,065 Expired - Lifetime US6273800B1 (en) | 1999-08-31 | 1999-08-31 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US09/795,263 Expired - Lifetime US6558234B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US09/795,248 Expired - Lifetime US6361417B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US09/795,283 Expired - Lifetime US6331139B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
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US09/387,065 Expired - Lifetime US6273800B1 (en) | 1999-08-31 | 1999-08-31 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US09/795,263 Expired - Lifetime US6558234B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US09/795,248 Expired - Lifetime US6361417B2 (en) | 1999-08-31 | 2001-02-27 | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
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-
1999
- 1999-08-31 US US09/387,065 patent/US6273800B1/en not_active Expired - Lifetime
-
2001
- 2001-02-27 US US09/795,263 patent/US6558234B2/en not_active Expired - Lifetime
- 2001-02-27 US US09/795,248 patent/US6361417B2/en not_active Expired - Lifetime
- 2001-02-27 US US09/795,283 patent/US6331139B2/en not_active Expired - Lifetime
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US20010006878A1 (en) | 2001-07-05 |
US20010006877A1 (en) | 2001-07-05 |
US6273800B1 (en) | 2001-08-14 |
US6331139B2 (en) | 2001-12-18 |
US6558234B2 (en) | 2003-05-06 |
US6361417B2 (en) | 2002-03-26 |
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