US20010002734A1 - Selectively coating bond pads - Google Patents
Selectively coating bond pads Download PDFInfo
- Publication number
- US20010002734A1 US20010002734A1 US09/769,976 US76997601A US2001002734A1 US 20010002734 A1 US20010002734 A1 US 20010002734A1 US 76997601 A US76997601 A US 76997601A US 2001002734 A1 US2001002734 A1 US 2001002734A1
- Authority
- US
- United States
- Prior art keywords
- bond
- coating
- solder ball
- gold
- bond pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0391—Using different types of conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/049—Wire bonding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
Definitions
- This invention relates generally to coating bond pads in the fabrication of integrated circuits.
- wire bond pads and solder ball bond pads are generally desirable to coat with nickel and gold.
- these coating processes are implemented simultaneously on both types of bond pads.
- Wire bond bond pads typically need more gold than solder ball bond pads. Too little gold causes wire bonding problems. Too much gold causes solder ball joint embrittlement.
- a method of coating solder ball and wire bond pads includes masking the solder ball pads. Gold is coated on the wire bond pads with the solder ball pads masked.
- FIG. 1 is a process flow for one embodiment of the present invention
- FIG. 2 is an enlarged cross-sectional view of a solder ball and a wire bond pad after nickel plating
- FIG. 3 is an enlarged cross-sectional view of the embodiment shown in FIG. 2 after the solder ball bond pad has been masked;
- FIG. 4 is an enlarged cross-sectional view corresponding to the embodiment shown in FIG. 3 after a thicker gold coat has been applied;
- FIG. 5 is an enlarged cross-sectional view after the solder ball bond pads have been unmasked
- FIG. 6 is an enlarged cross-sectional view of the embodiment shown in FIG. 5 after a thinner gold coat has been applied;
- FIG. 7 is an enlarged cross-sectional view of the finished structure in accordance with one embodiment of the present invention.
- FIG. 8 is a process flow for another embodiment of the present invention.
- FIG. 9 is an enlarged cross-sectional view of a solder ball and a wire bond bond pad after the wire bond bond pads have been coated with gold;
- FIG. 10 is an enlarged cross-sectional view after the solder ball bond pads have been unmasked
- FIG. 11 is an enlarged cross-sectional view after the wire bond bond pads have been masked
- FIG. 12 is an enlarged cross-sectional view after the solder ball bond pads have been coated.
- FIG. 13 is an enlarged cross-sectional view after the wire bond bond pads have been unmasked.
- a process for differentially coating solder ball bond pads and wire bond pads, shown in FIG. 1, may begin, in one embodiment of the present invention, by nickel plating wire bond pads 26 and solder ball bond pads 24 as indicated in block 10 of FIG. 1.
- coating is intended to encompass conventional electrolytic and electroless plating processes as well as aqueous immersion coating processes.
- coating is intended to be broader than conventional plating processes and is intended to refer to causing a metal layer to bond on top of another metal material.
- a solder ball bond pad 24 may be positioned on a support structure 20 which also may bear a wire bond bond pad 26 .
- the solder ball bond pad 24 is illustrated as being larger than the wire bond bond pad.
- the present invention is not limited in any way to any particular geometry of the bond pads.
- the solder ball bond pad 24 has a nickel coating 28 coated on it and the wire bond bond pad 26 is coated with a nickel coating 30 .
- solder ball bond pad 24 is then masked as indicated in block 12 of FIG. 1. This is illustrated by the coating 32 in FIG. 3. Any suitable masking material may be utilized as the coating 32 including patterned dry film resist.
- a thicker gold coating is applied to the wire bond bond pad 26 , as indicated in block 14 .
- No coating is applied to the solder ball bond pad 24 which is masked off.
- the resulting thicker gold coating 34 shown in FIG. 4, may be on the order of 0.1 to about 0.4 microns in thickness.
- solder ball bond pad 24 may be unmasked, as indicated in block 16 .
- the mask 32 has been removed, for example using an etching technique.
- a thinner gold coating may be applied as indicated in block 18 in FIG. 1.
- a thinner gold coating 36 may be applied over the nickel coating 28 on the solder ball bond pad 24 .
- the same coating may be added to the coating 34 applied to the wire bond bond pad 26 to form a composite gold layer 38 .
- Any of a variety of coating techniques, including electroless coating, immersion, and electrolytic plating, may be utilized to form the thinner gold coating.
- the coating is applied in two steps to the wire bond bond pads in the embodiments illustrated in FIGS. 1 - 6 , it is also possible to provide the wire bond gold coating in one single step and then to mask off the wire bond bond pads to provide the thinner gold coating only on the solder ball bond pads.
- the solder ball bond pads may have a gold coating with a thickness on the order of 0.1 to about 0.3 microns.
- One advantageous coating thickness is about 0.25 microns.
- a suitable gold coating 38 thickness on the wire bond bond pads is about 0.5 microns.
- the solder ball bond pad 24 may be copper or copper coated.
- the wire bond bond pad 26 may be formed, for example, of aluminum. However, other materials which are compatible with gold coating techniques may also be used.
- a package 52 made in accordance with the techniques described above includes a laminate core 20 .
- the laminate core 20 may be formed of an insulating material having a plurality of internal trace layers (not shown). Interconnections may be formed between various trace layers and the bond pads 40 and 42 contained on a surface of the core 20 .
- the bond pads 40 may be solder ball bond pads for coupling to solder balls (not shown).
- the bond pads 42 may be wire bond bond pads for coupling to bonding wires 50 also wire bonded to a die 44 through an opening 46 in the laminate core 20 .
- solder ball bond pads 40 and wire bond bond pads 42 on the same surface may be gold coated to different thicknesses, as described above, to achieve a more desirable performance.
- solder ball and wire bond bond pads are nickel coated as indicated in block 60 . This step is illustrated in FIG. 2. Next, the solder ball bond pads are masked as indicated in block 62 and FIG. 3.
- the wire bond bond pads 26 are coated as indicated in block 64 .
- the wire bond bond pads 26 are coated in one step to the full desired thickness.
- the wire bond bond pad coating is indicated at 76 in FIG. 9.
- the masking layer over the solder ball bond pads is indicated at 32 .
- solder ball bond pads are unmasked as indicated at block 66 in FIG. 8. As shown in FIG. 10, the mask 32 has been removed for example by etching.
- the wire bond bond pads are masked as indicated in block 68 .
- the mask 78 is shown in position over the wire bond bond pads 26 in FIG. 11.
- solder ball bond pads 24 may then be coated as suggested in block 70 and as illustrated at 80 in FIG. 12.
- the wire bond bond pads 26 may be unmasked (block 72 in FIG. 8). As shown in FIG. 13, the mask 78 has been removed. In some embodiments, different coating techniques may be used for solder ball versus wire bond bond pads.
Abstract
Solder ball bond pads and wire bond pads may be selectively coated so that the wire bond bond pads have a thicker gold coating than the solder ball bond pads. This may reduce the embrittlement of solder ball joints while providing a sufficient thickness of gold for the wire bonding process. In general, gold coatings are desirable on electrical contact surfaces to prevent oxidation. However, the thickness of gold which is necessary on solder ball bond pads may be less and excessive gold may be disadvantageous. Thus, by masking the solder ball bond pads during the gold coating of the wire bond bond pads, a differential gold thickness may be achieved which is more advantageous for each application.
Description
- This invention relates generally to coating bond pads in the fabrication of integrated circuits.
- It is generally desirable to coat wire bond pads and solder ball bond pads with nickel and gold. Currently these coating processes are implemented simultaneously on both types of bond pads. Wire bond bond pads typically need more gold than solder ball bond pads. Too little gold causes wire bonding problems. Too much gold causes solder ball joint embrittlement.
- As a result, in situations in which both types of bond pads are contained on the same structure, conventional processing provides either too much gold to suit the solder ball bond pads or too little gold to suit the wire bond pads. Certainly, providing excessive gold coatings is generally not cost effective.
- Thus, there is a need for a better way to coat bond pads in fabricating structures with both solder ball and wire bond bond pads.
- In accordance with one aspect, a method of coating solder ball and wire bond pads includes masking the solder ball pads. Gold is coated on the wire bond pads with the solder ball pads masked.
- Other aspects are set forth in the accompanying detailed description and claims.
- FIG. 1 is a process flow for one embodiment of the present invention;
- FIG. 2 is an enlarged cross-sectional view of a solder ball and a wire bond pad after nickel plating;
- FIG. 3 is an enlarged cross-sectional view of the embodiment shown in FIG. 2 after the solder ball bond pad has been masked;
- FIG. 4 is an enlarged cross-sectional view corresponding to the embodiment shown in FIG. 3 after a thicker gold coat has been applied;
- FIG. 5 is an enlarged cross-sectional view after the solder ball bond pads have been unmasked;
- FIG. 6 is an enlarged cross-sectional view of the embodiment shown in FIG. 5 after a thinner gold coat has been applied;
- FIG. 7 is an enlarged cross-sectional view of the finished structure in accordance with one embodiment of the present invention;
- FIG. 8 is a process flow for another embodiment of the present invention;
- FIG. 9 is an enlarged cross-sectional view of a solder ball and a wire bond bond pad after the wire bond bond pads have been coated with gold;
- FIG. 10 is an enlarged cross-sectional view after the solder ball bond pads have been unmasked;
- FIG. 11 is an enlarged cross-sectional view after the wire bond bond pads have been masked;
- FIG. 12 is an enlarged cross-sectional view after the solder ball bond pads have been coated; and
- FIG. 13 is an enlarged cross-sectional view after the wire bond bond pads have been unmasked.
- A process for differentially coating solder ball bond pads and wire bond pads, shown in FIG. 1, may begin, in one embodiment of the present invention, by nickel plating
wire bond pads 26 and solderball bond pads 24 as indicated inblock 10 of FIG. 1. As used herein, the term “coating” is intended to encompass conventional electrolytic and electroless plating processes as well as aqueous immersion coating processes. Thus, the term “coating” is intended to be broader than conventional plating processes and is intended to refer to causing a metal layer to bond on top of another metal material. - Conventional techniques for nickel coating include immersion using a chemical reducing agent such as sodium hypophosphate to reduce nickel salts. Such coatings may result in alloys with four to twelve percent phosphorus. However, conventional electrolytic and electroless nickel plating processes may be utilized as well.
- Referring to FIG. 2, a solder
ball bond pad 24 may be positioned on asupport structure 20 which also may bear a wirebond bond pad 26. In the illustrated embodiment, the solderball bond pad 24 is illustrated as being larger than the wire bond bond pad. However, the present invention is not limited in any way to any particular geometry of the bond pads. The solderball bond pad 24 has anickel coating 28 coated on it and the wirebond bond pad 26 is coated with anickel coating 30. - The solder
ball bond pad 24 is then masked as indicated inblock 12 of FIG. 1. This is illustrated by thecoating 32 in FIG. 3. Any suitable masking material may be utilized as thecoating 32 including patterned dry film resist. - Referring again to FIG. 1, a thicker gold coating is applied to the wire
bond bond pad 26, as indicated inblock 14. No coating is applied to the solderball bond pad 24 which is masked off. The resultingthicker gold coating 34, shown in FIG. 4, may be on the order of 0.1 to about 0.4 microns in thickness. - Next the solder
ball bond pad 24 may be unmasked, as indicated inblock 16. As illustrated in FIG. 5, themask 32 has been removed, for example using an etching technique. Thereafter, a thinner gold coating may be applied as indicated inblock 18 in FIG. 1. - Thus, as shown in FIG. 6, a
thinner gold coating 36 may be applied over thenickel coating 28 on the solderball bond pad 24. The same coating may be added to thecoating 34 applied to the wirebond bond pad 26 to form acomposite gold layer 38. Any of a variety of coating techniques, including electroless coating, immersion, and electrolytic plating, may be utilized to form the thinner gold coating. - While the coating is applied in two steps to the wire bond bond pads in the embodiments illustrated in FIGS.1-6, it is also possible to provide the wire bond gold coating in one single step and then to mask off the wire bond bond pads to provide the thinner gold coating only on the solder ball bond pads.
- As a result of the processing described above, the solder ball bond pads may have a gold coating with a thickness on the order of 0.1 to about 0.3 microns. One advantageous coating thickness is about 0.25 microns. In general, it is desirable to provide a coating thickness on the solder ball bond pads which is sufficiently small to reduce solder ball joint embrittlement. It is also desirable to have a coating which is thick enough to prevent oxidation.
- At the same time, it is desirable to provide a conventional thickness of gold on the wire bond bond pads to provide a good wire bond when using conventional wire bond bonding techniques. A
suitable gold coating 38 thickness on the wire bond bond pads is about 0.5 microns. - In some embodiments of the present invention, the solder
ball bond pad 24 may be copper or copper coated. The wirebond bond pad 26 may be formed, for example, of aluminum. However, other materials which are compatible with gold coating techniques may also be used. - Referring to FIG. 7, one embodiment of a
package 52 made in accordance with the techniques described above includes alaminate core 20. Thelaminate core 20 may be formed of an insulating material having a plurality of internal trace layers (not shown). Interconnections may be formed between various trace layers and thebond pads core 20. Thebond pads 40 may be solder ball bond pads for coupling to solder balls (not shown). Thebond pads 42 may be wire bond bond pads for coupling tobonding wires 50 also wire bonded to a die 44 through anopening 46 in thelaminate core 20. - The solder
ball bond pads 40 and wirebond bond pads 42 on the same surface may be gold coated to different thicknesses, as described above, to achieve a more desirable performance. - As illustrated in FIG. 8, in accordance with another embodiment of the present invention, the solder ball and wire bond bond pads are nickel coated as indicated in
block 60. This step is illustrated in FIG. 2. Next, the solder ball bond pads are masked as indicated inblock 62 and FIG. 3. - The wire
bond bond pads 26 are coated as indicated inblock 64. In this embodiment, the wirebond bond pads 26 are coated in one step to the full desired thickness. The wire bond bond pad coating is indicated at 76 in FIG. 9. The masking layer over the solder ball bond pads is indicated at 32. - Next the solder ball bond pads are unmasked as indicated at
block 66 in FIG. 8. As shown in FIG. 10, themask 32 has been removed for example by etching. - Referring again to FIG. 8, the wire bond bond pads are masked as indicated in
block 68. Themask 78 is shown in position over the wirebond bond pads 26 in FIG. 11. - The solder
ball bond pads 24 may then be coated as suggested inblock 70 and as illustrated at 80 in FIG. 12. The wirebond bond pads 26 may be unmasked (block 72 in FIG. 8). As shown in FIG. 13, themask 78 has been removed. In some embodiments, different coating techniques may be used for solder ball versus wire bond bond pads. - While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims (36)
1. A method of coating solder ball and wire bond bond pads comprising:
masking said solder ball bond pads; and
coating gold on said wire bond bond pads with said solder ball bond pads masked.
2. The method of including providing a different gold coating thickness on said solder ball bond pads and said wire bond bond pads.
claim 1
3. The method of including providing a thicker gold coating on said wire bond bond pads than on said solder ball bond pads.
claim 2
4. The method of including providing a gold coating, on said wire bond bond pads, having a thickness of about 0.5 microns and providing a solder ball bond pad gold coating of approximately 0.1 to 0.3 microns in thickness.
claim 3
5. The method of including nickel coating said solder ball and said wire bond bond pads at the same time before coating said wire bond bond pads with gold.
claim 1
6. The method of including coating said wire bond bond pads with a first gold coating and coating both of said solder ball bond pads and said wire bond bond pads with a second gold coating.
claim 1
7. The method of wherein said second gold coating is thinner than said first gold coating.
claim 6
8. The method of including using an electroless plating technique to coat gold on said wire bond bond pads.
claim 1
9. The method of including forming a laminate structure having solder ball bond pads and wire bond bond pads on the same surface.
claim 1
10. The method of wherein said solder ball bond pads are gold coated in a single step.
claim 1
11. The method of including coating said solder ball bond pads and said wire bond bond pads while the other of said solder ball and wire bond bond pads is masked.
claim 10
12. A method of coating two different types of bond pads on the same surface comprising:
masking off a first type of bond pad; and
coating a metal on the second type of bond pad with said first type of bond pad being masked.
13. The method of including masking solder ball bond pads.
claim 12
14. The method of including coating metal on wire bond bond pads.
claim 13
15. The method of including coating gold on said wire bond bond pads.
claim 14
16. The method of including unmasking said solder ball bond pads and coating a metal on both said wire bond bond pads and said solder ball bond pads.
claim 15
17. The method of including providing different coating thicknesses on said first and second types of bond pads.
claim 12
18. The method of including coating gold on said second type of bond pad.
claim 12
19. The method of wherein said first type of bond pad is a solder ball bond pad and said second type of bond pad is a wire bond bond pad, coating gold on said wire bond bond pad to a thickness of about 0.5 microns and coating gold on said solder ball bond pads to a thickness of about 0.1 to about 0.3 microns.
claim 18
20. The method of including nickel coating said first and second types of bond pads at the same time before coating said wire bond bond pads with said metal.
claim 19
21. The method of including coating both said first and second types of bond pads with said metal after coating said metal on said second type of bond pad.
claim 12
22. The method of including masking off said second type of bond pad and coating metal on said first type of bond pad.
claim 12
23. A method of forming solder ball and wire bond bond pads comprising:
forming a solder ball bond pad;
coating gold over said solder ball bond pad;
forming a wire bond bond pad; and
coating gold over said wire bond bond pad to a thickness greater than said gold coating over said solder ball bond pad.
24. The method of including masking said solder ball bond pad and coating gold on said wire bond bond pad with said solder ball bond pad masked.
claim 23
25. The method of including providing a gold coating on said wire bond bond pad having a thickness of about 0.5 microns.
claim 24
26. The method of including providing a gold coating on said solder ball bond pad of approximately 0.1 to 0.3 microns in thickness.
claim 23
27. The method of including coating said wire bond bond pads with a first gold coating and coating both of said solder ball and said wire bond bond pads with a second gold coating.
claim 23
28. The method of including coating said solder ball bond pad to a thickness of approximately 0.25 microns.
claim 23
29. A method of forming solder ball and wire bond bond pads comprising:
masking said solder ball bond pad;
coating gold over said wire bond bond pad;
masking said wire bond bond pad; and
coating gold over said solder ball bond pad.
30. The method of including coating said wire bond bond pad with gold to a thickness greater than the gold coating over said solder ball bond pad.
claim 29
31. A packaged integrated circuit device comprising:
a plurality of gold coated solder ball bond pads;
a plurality of gold coated wire bond bond pads; and
the gold coating on said solder ball bond pads being thinner than the gold coating on said wire bond bond pads.
32. The device of wherein the thickness of the gold on said solder ball bond pads is sufficiently low to reduce the likelihood of solder ball joint embrittlement.
claim 31
33. The device of wherein said solder ball bond pads have a gold coating having a thickness of between about 0.1 and 0.3 microns.
claim 31
34. The device of wherein said solder ball bond pad gold coating has a thickness of about 0.25 microns.
claim 33
35. The device of wherein said wire bond bond pads have a gold coating thickness of approximately 0.5 microns.
claim 33
36. The device of wherein said solder ball bond pads and said wire bond bond pads are all contained on the same planar surface.
claim 31
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/769,976 US20010002734A1 (en) | 1999-08-25 | 2001-01-25 | Selectively coating bond pads |
US10/721,062 US6998714B2 (en) | 1999-08-25 | 2003-11-24 | Selectively coating bond pads |
US11/250,036 US20060030147A1 (en) | 1999-08-25 | 2005-10-13 | Selectively coating bond pads |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/382,930 US6403457B2 (en) | 1999-08-25 | 1999-08-25 | Selectively coating bond pads |
US09/769,976 US20010002734A1 (en) | 1999-08-25 | 2001-01-25 | Selectively coating bond pads |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/382,930 Division US6403457B2 (en) | 1999-08-25 | 1999-08-25 | Selectively coating bond pads |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/721,062 Continuation US6998714B2 (en) | 1999-08-25 | 2003-11-24 | Selectively coating bond pads |
Publications (1)
Publication Number | Publication Date |
---|---|
US20010002734A1 true US20010002734A1 (en) | 2001-06-07 |
Family
ID=23511009
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/382,930 Expired - Lifetime US6403457B2 (en) | 1999-08-25 | 1999-08-25 | Selectively coating bond pads |
US09/769,976 Abandoned US20010002734A1 (en) | 1999-08-25 | 2001-01-25 | Selectively coating bond pads |
US10/721,062 Expired - Fee Related US6998714B2 (en) | 1999-08-25 | 2003-11-24 | Selectively coating bond pads |
US11/250,036 Abandoned US20060030147A1 (en) | 1999-08-25 | 2005-10-13 | Selectively coating bond pads |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/382,930 Expired - Lifetime US6403457B2 (en) | 1999-08-25 | 1999-08-25 | Selectively coating bond pads |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/721,062 Expired - Fee Related US6998714B2 (en) | 1999-08-25 | 2003-11-24 | Selectively coating bond pads |
US11/250,036 Abandoned US20060030147A1 (en) | 1999-08-25 | 2005-10-13 | Selectively coating bond pads |
Country Status (1)
Country | Link |
---|---|
US (4) | US6403457B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030132516A1 (en) * | 2002-01-15 | 2003-07-17 | Yasufumi Uchida | Semiconductor device and manufacturing method thereof |
CN108055785A (en) * | 2017-11-27 | 2018-05-18 | 大连崇达电路有限公司 | A kind of figure nickel gold process of optimization |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6706622B1 (en) * | 2001-09-07 | 2004-03-16 | Lsi Logic Corporation | Bonding pad interface |
DE10158809B4 (en) * | 2001-11-30 | 2006-08-31 | Infineon Technologies Ag | Manufacturing method for a conductor track on a substrate and a corresponding conductor track |
US7202556B2 (en) * | 2001-12-20 | 2007-04-10 | Micron Technology, Inc. | Semiconductor package having substrate with multi-layer metal bumps |
US6709980B2 (en) * | 2002-05-24 | 2004-03-23 | Micron Technology, Inc. | Using stabilizers in electroless solutions to inhibit plating of fuses |
US6784544B1 (en) * | 2002-06-25 | 2004-08-31 | Micron Technology, Inc. | Semiconductor component having conductors with wire bondable metalization layers |
US7242097B2 (en) * | 2003-06-30 | 2007-07-10 | Intel Corporation | Electromigration barrier layers for solder joints |
US7294565B2 (en) * | 2003-10-01 | 2007-11-13 | International Business Machines Corporation | Method of fabricating a wire bond pad with Ni/Au metallization |
FR2888986B1 (en) * | 2005-07-25 | 2007-09-21 | St Microelectronics Sa | CONDUCTIVE BRAKE CONSTRUCTION FOR INTEGRATED CIRCUIT |
US7851345B2 (en) * | 2008-03-19 | 2010-12-14 | Stats Chippac, Ltd. | Semiconductor device and method of forming oxide layer on signal traces for electrical isolation in fine pitch bonding |
US8349721B2 (en) * | 2008-03-19 | 2013-01-08 | Stats Chippac, Ltd. | Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding |
KR20100013033A (en) * | 2008-07-30 | 2010-02-09 | 삼성전자주식회사 | Conductive ink/paste printed circuit board having plating layer and method for manufacturing the same |
US20130241058A1 (en) * | 2012-03-16 | 2013-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wire Bonding Structures for Integrated Circuits |
US10216622B2 (en) * | 2016-09-01 | 2019-02-26 | International Business Machines Corporation | Diagnostic analysis and symptom matching |
JP2022129462A (en) * | 2021-02-25 | 2022-09-06 | キオクシア株式会社 | Semiconductor device and method for manufacturing semiconductor device |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2726A (en) * | 1842-07-16 | Improvement in water-wheels | ||
US4229248A (en) * | 1979-04-06 | 1980-10-21 | Intel Magnetics, Inc. | Process for forming bonding pads on magnetic bubble devices |
US4355456A (en) * | 1980-03-07 | 1982-10-26 | General Dynamics, Pomona Division | Process of fabricating a Schottky barrier photovoltaic detector |
DE3343362A1 (en) * | 1983-11-30 | 1985-06-05 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR GALVANIC PRODUCTION OF METALLIC, HECKER-LIKE CONNECTION CONTACTS |
US4630081A (en) * | 1984-12-19 | 1986-12-16 | Eaton Corporation | MOMOM tunnel emission transistor |
JPH04222044A (en) * | 1990-12-21 | 1992-08-12 | Nec Corp | Data communication processor |
JP2708322B2 (en) * | 1992-05-07 | 1998-02-04 | 株式会社日立製作所 | Method of manufacturing connection pad of wiring board |
GB2273257B (en) * | 1992-06-30 | 1996-03-27 | Hughes Aircraft Co | Electrical interconnection substrate with both wire bond and solder contacts |
US5311404A (en) * | 1992-06-30 | 1994-05-10 | Hughes Aircraft Company | Electrical interconnection substrate with both wire bond and solder contacts |
JP2773578B2 (en) * | 1992-10-02 | 1998-07-09 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JP3297220B2 (en) * | 1993-10-29 | 2002-07-02 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor device |
US5480834A (en) * | 1993-12-13 | 1996-01-02 | Micron Communications, Inc. | Process of manufacturing an electrical bonding interconnect having a metal bond pad portion and having a conductive epoxy portion comprising an oxide reducing agent |
US5625734A (en) * | 1995-05-31 | 1997-04-29 | Motorola | Optoelectronic interconnect device and method of making |
JP3561084B2 (en) * | 1995-07-24 | 2004-09-02 | シャープ株式会社 | Photodetector with built-in circuit, electronic component, optical pickup device, and method of manufacturing photodetector with built-in circuit |
US5693565A (en) * | 1996-07-15 | 1997-12-02 | Dow Corning Corporation | Semiconductor chips suitable for known good die testing |
JP3454097B2 (en) | 1997-08-19 | 2003-10-06 | 松下電器産業株式会社 | Electronic component and method of manufacturing electronic component |
US5909633A (en) * | 1996-11-29 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing an electronic component |
JPH10163241A (en) | 1996-11-29 | 1998-06-19 | Matsushita Electric Ind Co Ltd | Manufacture of electronic component |
US5891756A (en) * | 1997-06-27 | 1999-04-06 | Delco Electronics Corporation | Process for converting a wire bond pad to a flip chip solder bump pad and pad formed thereby |
US5930666A (en) * | 1997-10-09 | 1999-07-27 | Astralux, Incorporated | Method and apparatus for packaging high temperature solid state electronic devices |
-
1999
- 1999-08-25 US US09/382,930 patent/US6403457B2/en not_active Expired - Lifetime
-
2001
- 2001-01-25 US US09/769,976 patent/US20010002734A1/en not_active Abandoned
-
2003
- 2003-11-24 US US10/721,062 patent/US6998714B2/en not_active Expired - Fee Related
-
2005
- 2005-10-13 US US11/250,036 patent/US20060030147A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030132516A1 (en) * | 2002-01-15 | 2003-07-17 | Yasufumi Uchida | Semiconductor device and manufacturing method thereof |
US7317244B2 (en) * | 2002-01-15 | 2008-01-08 | Oki Electric Industry Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN108055785A (en) * | 2017-11-27 | 2018-05-18 | 大连崇达电路有限公司 | A kind of figure nickel gold process of optimization |
Also Published As
Publication number | Publication date |
---|---|
US20020011666A1 (en) | 2002-01-31 |
US6998714B2 (en) | 2006-02-14 |
US20040150106A1 (en) | 2004-08-05 |
US20060030147A1 (en) | 2006-02-09 |
US6403457B2 (en) | 2002-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060030147A1 (en) | Selectively coating bond pads | |
EP0452506B1 (en) | METHOD OF PRODUCING A FLEXIBLE CIRCUIT BOARD FOR MOUNTING IC's | |
US8230591B2 (en) | Method for fabricating an electronic device substrate | |
US7928574B2 (en) | Semiconductor package having buss-less substrate | |
KR0153765B1 (en) | Composite article comprising a copper element and a process for producing it | |
US20040201105A1 (en) | Wiring board and method for producing same | |
US11756899B2 (en) | Lead frame surface finishing | |
US20020190378A1 (en) | Substrate within a Ni/Au structure electroplated on electrical contact pads and method for fabricating the same | |
JP3003624B2 (en) | Semiconductor device | |
US7320932B2 (en) | Semiconductor device and manufacturing method thereof | |
JP2000031366A (en) | Resin sealed semiconductor device and circuit member used therefor, and manufacture thereof | |
JPH04144190A (en) | Circuit board and manufacture thereof | |
JP2616063B2 (en) | Manufacturing method of bump electrode | |
KR100495932B1 (en) | Film Carrier Tape and Method of fabricating the same | |
KR20050019664A (en) | Semiconductor package having solder balls | |
JP2787230B2 (en) | Substrate for mounting electronic components | |
JPS62154658A (en) | Manufacture of lead frame for semiconductor device | |
JP2555917B2 (en) | Film carrier for semiconductor device | |
JPH0685127A (en) | Metal foil laminated film | |
JPS62136857A (en) | Manufacture of semiconductor device | |
CN113990763A (en) | Chip packaging structure based on electroforming technology and packaging method thereof | |
JPH02244722A (en) | Forming method for bump electrode of semiconductor element | |
JPH11195864A (en) | Manufacture of wiring board | |
JPH05160319A (en) | Lead frame and manufacture thereof | |
JPS62154657A (en) | Manufacture of lead frame for semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |