EP2856512A4 - Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells - Google Patents

Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Info

Publication number
EP2856512A4
EP2856512A4 EP13798110.6A EP13798110A EP2856512A4 EP 2856512 A4 EP2856512 A4 EP 2856512A4 EP 13798110 A EP13798110 A EP 13798110A EP 2856512 A4 EP2856512 A4 EP 2856512A4
Authority
EP
European Patent Office
Prior art keywords
contiguous
structures
formation
methods
high efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13798110.6A
Other languages
German (de)
French (fr)
Other versions
EP2856512A1 (en
Inventor
Anand Deshpande
Pawan Kapur
Virendra V Rana
Mehrdad M Moslehi
Sean M Seutter
Heather Deshazer
Swaroop Kommera
Pranav Anbalagan
Benjamine E Rattle
Solene Coutant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of EP2856512A1 publication Critical patent/EP2856512A1/en
Publication of EP2856512A4 publication Critical patent/EP2856512A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP13798110.6A 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells Withdrawn EP2856512A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261652833P 2012-05-29 2012-05-29
US201361816830P 2013-04-29 2013-04-29
US201361827252P 2013-05-24 2013-05-24
PCT/US2013/043193 WO2013181298A1 (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Publications (2)

Publication Number Publication Date
EP2856512A1 EP2856512A1 (en) 2015-04-08
EP2856512A4 true EP2856512A4 (en) 2015-12-16

Family

ID=49673880

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13798110.6A Withdrawn EP2856512A4 (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Country Status (7)

Country Link
EP (1) EP2856512A4 (en)
JP (1) JP2015528196A (en)
KR (1) KR101528447B1 (en)
CN (1) CN104737302A (en)
AU (2) AU2013267481A1 (en)
MY (1) MY184055A (en)
WO (1) WO2013181298A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105322032A (en) * 2014-07-30 2016-02-10 英稳达科技股份有限公司 Solar battery
WO2017008120A1 (en) * 2015-07-14 2017-01-19 Newsouth Innovations Pty Limited A method for forming a contacting structure to a back contact solar cell
KR102600379B1 (en) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 Solar cell and method for fabricating therefor
KR102230283B1 (en) 2017-02-20 2021-03-19 가부시키가이샤 후지킨 Fluid controller abnormality detection device, abnormality detection system, abnormality detection method and fluid controller unit
JP6971318B2 (en) * 2017-07-18 2021-11-24 シャープ株式会社 Photoelectric converter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
DE102009003467A1 (en) * 2009-02-11 2010-08-19 Q-Cells Se Rear-contacted solar cell
US20120122272A1 (en) * 2007-10-06 2012-05-17 Solexel, Inc. High-throughput flat top laser beam processing for back contact solar cells

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JP2005310830A (en) * 2004-04-16 2005-11-04 Sharp Corp Solar cell and manufacturing method thereof
DE102004050269A1 (en) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Process for the contact separation of electrically conductive layers on back-contacted solar cells and solar cell
WO2008080160A1 (en) * 2006-12-22 2008-07-03 Advent Solar, Inc. Interconnect technologies for back contact solar cells and modules
US20100084009A1 (en) * 2007-03-16 2010-04-08 Bp Corporation North America Inc. Solar Cells
DE102007059486A1 (en) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rear contact solar cell with elongated, interleaved emitter and base regions at the back and manufacturing method thereof
US20090217963A1 (en) * 2008-02-29 2009-09-03 Motorola, Inc. Photovoltaic apparatus for charging a portable electronic device and method for making
US20090301559A1 (en) * 2008-05-13 2009-12-10 Georgia Tech Research Corporation Solar cell having a high quality rear surface spin-on dielectric layer
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
JP2012501550A (en) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド Back-contact solar cells using printed dielectric barriers
JP2012521662A (en) * 2009-03-26 2012-09-13 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド Apparatus and method for solar cells having laser fired contacts in a thermal diffusion doped region
KR101153377B1 (en) * 2009-08-24 2012-06-07 주식회사 효성 Back junction solar cell having improved rear structure and method for manufacturing therof
JP2011061020A (en) * 2009-09-10 2011-03-24 Sharp Corp Back contact solar cell element, and method of manufacturing the same
US20130233378A1 (en) * 2009-12-09 2013-09-12 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers
EP2395554A3 (en) * 2010-06-14 2015-03-11 Imec Fabrication method for interdigitated back contact photovoltaic cells
MY158500A (en) * 2010-08-05 2016-10-14 Solexel Inc Backplane reinforcement and interconnects for solar cells
KR20120021859A (en) * 2010-08-19 2012-03-09 현대중공업 주식회사 Manufacture method for rear contact in solar cell
TWI420700B (en) * 2010-12-29 2013-12-21 Au Optronics Corp Solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US20120122272A1 (en) * 2007-10-06 2012-05-17 Solexel, Inc. High-throughput flat top laser beam processing for back contact solar cells
DE102009003467A1 (en) * 2009-02-11 2010-08-19 Q-Cells Se Rear-contacted solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
D TROGUS ET AL: "Phosphoric Anti-Reflective Coatings as Dopant Source and Front-Side Passivation for Industrial Silicon Solar Cell Manufacturing", 1 November 2011 (2011-11-01), XP055226425, Retrieved from the Internet <URL:https://www.ise.fraunhofer.de/de/veroeffentlichungen/konferenzbeitraege/2011/26th-european-photovoltaic-solar-energy-conference-and-exhibition-eupvsec-hamburg-germany/trogus-2bv.1.44.pdf> [retrieved on 20151106], DOI: 10.4229/26thEUPVSEC2011-2BV.1.44 *

Also Published As

Publication number Publication date
AU2016200610A1 (en) 2016-02-25
KR101528447B1 (en) 2015-06-11
MY184055A (en) 2021-03-17
AU2016200610B2 (en) 2017-12-07
AU2013267481A1 (en) 2015-01-22
EP2856512A1 (en) 2015-04-08
JP2015528196A (en) 2015-09-24
WO2013181298A1 (en) 2013-12-05
KR20150028782A (en) 2015-03-16
CN104737302A (en) 2015-06-24

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: RANA, VIRENDRA, V.

Inventor name: ANBALAGAN, PRANAV

Inventor name: KOMMERA, SWAROOP

Inventor name: MOSLEHI, MEHRDAD, M.

Inventor name: SEUTTER, SEAN, M.

Inventor name: KAPUR, PAWAN

Inventor name: DESHPANDE, ANAND

Inventor name: COUTANT, SOLENE

Inventor name: DESHAZER, HEATHER

Inventor name: RATTLE, BENJAMINE, E.

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