EP2791986A4 - Nonvolatile resistive memory element with a passivated switching layer - Google Patents

Nonvolatile resistive memory element with a passivated switching layer

Info

Publication number
EP2791986A4
EP2791986A4 EP12853845.1A EP12853845A EP2791986A4 EP 2791986 A4 EP2791986 A4 EP 2791986A4 EP 12853845 A EP12853845 A EP 12853845A EP 2791986 A4 EP2791986 A4 EP 2791986A4
Authority
EP
European Patent Office
Prior art keywords
passivated
memory element
resistive memory
switching layer
nonvolatile resistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12853845.1A
Other languages
German (de)
French (fr)
Other versions
EP2791986A1 (en
Inventor
Charlene Chen
Dipankar Pramanik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
SanDisk 3D LLC
Original Assignee
Toshiba Corp
SanDisk 3D LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, SanDisk 3D LLC filed Critical Toshiba Corp
Publication of EP2791986A1 publication Critical patent/EP2791986A1/en
Publication of EP2791986A4 publication Critical patent/EP2791986A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H10N70/043—Modification of the switching material, e.g. post-treatment, doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
EP12853845.1A 2011-12-02 2012-11-21 Nonvolatile resistive memory element with a passivated switching layer Withdrawn EP2791986A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/309,813 US8637413B2 (en) 2011-12-02 2011-12-02 Nonvolatile resistive memory element with a passivated switching layer
PCT/US2012/066398 WO2013081945A1 (en) 2011-12-02 2012-11-21 Nonvolatile resistive memory element with a passivated switching layer

Publications (2)

Publication Number Publication Date
EP2791986A1 EP2791986A1 (en) 2014-10-22
EP2791986A4 true EP2791986A4 (en) 2015-07-01

Family

ID=48523345

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12853845.1A Withdrawn EP2791986A4 (en) 2011-12-02 2012-11-21 Nonvolatile resistive memory element with a passivated switching layer

Country Status (5)

Country Link
US (2) US8637413B2 (en)
EP (1) EP2791986A4 (en)
KR (1) KR20140121393A (en)
CN (1) CN104094430A (en)
WO (1) WO2013081945A1 (en)

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US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US8907314B2 (en) * 2012-12-27 2014-12-09 Intermolecular, Inc. MoOx-based resistance switching materials
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
KR20160066971A (en) * 2014-12-03 2016-06-13 삼성전자주식회사 Resistive memory devices
US20170237001A1 (en) * 2016-02-17 2017-08-17 Arm Ltd. Fabrication of correlated electron material devices comprising nitrogen
US10797238B2 (en) 2016-01-26 2020-10-06 Arm Ltd. Fabricating correlated electron material (CEM) devices
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US20110140762A1 (en) * 2009-12-11 2011-06-16 International Business Machines Corporation Resistive Switching in Nitrogen-doped MgO

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KR20140121393A (en) 2014-10-15
US20130140512A1 (en) 2013-06-06
US8637413B2 (en) 2014-01-28

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