EP1957249A4 - Method and system for double-sided patterning of substrates - Google Patents
Method and system for double-sided patterning of substratesInfo
- Publication number
- EP1957249A4 EP1957249A4 EP06844789A EP06844789A EP1957249A4 EP 1957249 A4 EP1957249 A4 EP 1957249A4 EP 06844789 A EP06844789 A EP 06844789A EP 06844789 A EP06844789 A EP 06844789A EP 1957249 A4 EP1957249 A4 EP 1957249A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrates
- double
- sided patterning
- patterning
- sided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/887—Nanoimprint lithography, i.e. nanostamp
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74843005P | 2005-12-08 | 2005-12-08 | |
PCT/US2006/046256 WO2007067488A2 (en) | 2005-12-08 | 2006-11-30 | Method and system for double-sided patterning of substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1957249A2 EP1957249A2 (en) | 2008-08-20 |
EP1957249A4 true EP1957249A4 (en) | 2012-07-25 |
EP1957249B1 EP1957249B1 (en) | 2014-11-12 |
Family
ID=38123403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06844789.5A Not-in-force EP1957249B1 (en) | 2005-12-08 | 2006-11-30 | Method and system for double-sided patterning of substrates |
Country Status (8)
Country | Link |
---|---|
US (2) | US7670529B2 (en) |
EP (1) | EP1957249B1 (en) |
JP (1) | JP4987012B2 (en) |
KR (1) | KR101324549B1 (en) |
CN (2) | CN101535021A (en) |
MY (1) | MY144847A (en) |
TW (1) | TWI310726B (en) |
WO (1) | WO2007067488A2 (en) |
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US7442336B2 (en) * | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
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US7641840B2 (en) * | 2002-11-13 | 2010-01-05 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US20060062922A1 (en) | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US7676088B2 (en) * | 2004-12-23 | 2010-03-09 | Asml Netherlands B.V. | Imprint lithography |
US8011915B2 (en) | 2005-11-04 | 2011-09-06 | Asml Netherlands B.V. | Imprint lithography |
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US7803308B2 (en) | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
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US7670530B2 (en) * | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
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US8142850B2 (en) * | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US7802978B2 (en) * | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
JP5306989B2 (en) * | 2006-04-03 | 2013-10-02 | モレキュラー・インプリンツ・インコーポレーテッド | Method for simultaneously patterning a substrate having a plurality of fields and alignment marks |
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US8119052B2 (en) * | 2007-11-02 | 2012-02-21 | Molecular Imprints, Inc. | Drop pattern generation for imprint lithography |
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US8075299B2 (en) * | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
US8586126B2 (en) | 2008-10-21 | 2013-11-19 | Molecular Imprints, Inc. | Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement |
US8512797B2 (en) * | 2008-10-21 | 2013-08-20 | Molecular Imprints, Inc. | Drop pattern generation with edge weighting |
US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
US8309008B2 (en) * | 2008-10-30 | 2012-11-13 | Molecular Imprints, Inc. | Separation in an imprint lithography process |
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US8231821B2 (en) * | 2008-11-04 | 2012-07-31 | Molecular Imprints, Inc. | Substrate alignment |
US8432548B2 (en) * | 2008-11-04 | 2013-04-30 | Molecular Imprints, Inc. | Alignment for edge field nano-imprinting |
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JP5328495B2 (en) * | 2009-06-04 | 2013-10-30 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
WO2011077882A1 (en) * | 2009-12-25 | 2011-06-30 | 株式会社日立ハイテクノロジーズ | Double-side imprint device |
JP5469041B2 (en) * | 2010-03-08 | 2014-04-09 | 株式会社日立ハイテクノロジーズ | Fine structure transfer method and apparatus |
JPWO2012020741A1 (en) * | 2010-08-12 | 2013-10-28 | 株式会社日立ハイテクノロジーズ | Optical imprint method and apparatus |
JP2012109487A (en) * | 2010-11-19 | 2012-06-07 | Hitachi High-Technologies Corp | Double-sided imprint apparatus |
CN107611258A (en) | 2011-11-23 | 2018-01-19 | 应用材料公司 | Method for silica chemistry vapour deposition photoresist planarization |
JP5930832B2 (en) | 2012-04-27 | 2016-06-08 | キヤノン株式会社 | Method for producing photocured product |
CN104129816B (en) * | 2014-07-31 | 2016-03-30 | 襄阳龙蟒钛业有限公司 | The method of a kind of titanium white gelled acid deironing |
US10120276B2 (en) * | 2015-03-31 | 2018-11-06 | Canon Kabushiki Kaisha | Imprint apparatus, imprint method, and method of manufacturing article |
WO2017180866A1 (en) * | 2016-04-15 | 2017-10-19 | Michaelis A John | Maintaining alignment while turning over a panel |
CN205702840U (en) * | 2016-05-12 | 2016-11-23 | 李俊豪 | The laser board of two-sided processing |
CN106206462A (en) * | 2016-09-12 | 2016-12-07 | 桂林电子科技大学 | A kind of double-faced flexible structural substrate towards extending electronics |
WO2018067677A1 (en) * | 2016-10-04 | 2018-04-12 | Tokyo Electron Limited | Facilitation of spin-coat planarization over feature topography during substrate fabrication |
DE102016122355B4 (en) * | 2016-11-21 | 2018-10-04 | Manz Ag | Processing plant and method for processing a plate-shaped object |
US10969680B2 (en) * | 2016-11-30 | 2021-04-06 | Canon Kabushiki Kaisha | System and method for adjusting a position of a template |
US10395940B1 (en) | 2018-03-13 | 2019-08-27 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of etching microelectronic mechanical system features in a silicon wafer |
US20220260904A1 (en) * | 2019-07-23 | 2022-08-18 | University Of Massachusetts | Thermal imprinting of nanostructure materials |
CN111913349A (en) * | 2020-08-25 | 2020-11-10 | 青岛天仁微纳科技有限责任公司 | Nano-imprinting device and imprinting method |
CN113934111B (en) * | 2021-11-09 | 2023-07-18 | 青岛天仁微纳科技有限责任公司 | Nanometer impression equipment with two-sided impression function |
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MY144847A (en) | 2011-11-30 |
WO2007067488A3 (en) | 2009-04-23 |
TW200730325A (en) | 2007-08-16 |
KR101324549B1 (en) | 2013-11-01 |
US20070132152A1 (en) | 2007-06-14 |
JP4987012B2 (en) | 2012-07-25 |
KR20080080338A (en) | 2008-09-03 |
WO2007067488A2 (en) | 2007-06-14 |
US8109754B2 (en) | 2012-02-07 |
EP1957249A2 (en) | 2008-08-20 |
CN104317161A (en) | 2015-01-28 |
US20100129486A1 (en) | 2010-05-27 |
TWI310726B (en) | 2009-06-11 |
CN101535021A (en) | 2009-09-16 |
EP1957249B1 (en) | 2014-11-12 |
JP2009518863A (en) | 2009-05-07 |
US7670529B2 (en) | 2010-03-02 |
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