EP1593162A4 - Semiconductor device, production method thereof and light-emitting device - Google Patents

Semiconductor device, production method thereof and light-emitting device

Info

Publication number
EP1593162A4
EP1593162A4 EP04708877A EP04708877A EP1593162A4 EP 1593162 A4 EP1593162 A4 EP 1593162A4 EP 04708877 A EP04708877 A EP 04708877A EP 04708877 A EP04708877 A EP 04708877A EP 1593162 A4 EP1593162 A4 EP 1593162A4
Authority
EP
European Patent Office
Prior art keywords
light
production method
semiconductor device
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04708877A
Other languages
German (de)
French (fr)
Other versions
EP1593162A1 (en
Inventor
Takashi Udagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003032344A external-priority patent/JP3939257B2/en
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of EP1593162A1 publication Critical patent/EP1593162A1/en
Publication of EP1593162A4 publication Critical patent/EP1593162A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
EP04708877A 2003-02-10 2004-02-06 Semiconductor device, production method thereof and light-emitting device Withdrawn EP1593162A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003032344 2003-02-10
JP2003032344A JP3939257B2 (en) 2003-02-10 2003-02-10 Manufacturing method of semiconductor device
US44810503P 2003-02-20 2003-02-20
US448105P 2003-02-20
PCT/JP2004/001296 WO2004070846A1 (en) 2003-02-10 2004-02-06 Semiconductor device, production method thereof and light-emitting device

Publications (2)

Publication Number Publication Date
EP1593162A1 EP1593162A1 (en) 2005-11-09
EP1593162A4 true EP1593162A4 (en) 2009-01-28

Family

ID=32852701

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04708877A Withdrawn EP1593162A4 (en) 2003-02-10 2004-02-06 Semiconductor device, production method thereof and light-emitting device

Country Status (2)

Country Link
EP (1) EP1593162A4 (en)
WO (1) WO2004070846A1 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242567A (en) * 1998-04-06 1998-09-11 Toshiba Corp Semiconductor laser
DE19755009C1 (en) * 1997-12-11 1999-08-19 Vishay Semiconductor Gmbh LED structure is produced with reduced dislocation density and lattice stress
JP2000058451A (en) * 1998-08-06 2000-02-25 Showa Denko Kk Compound semiconductor element and its manufacture thereof
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
US6107648A (en) * 1997-03-13 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device having a structure which relieves lattice mismatch
US20010054717A1 (en) * 2000-06-22 2001-12-27 Showa Denko K.K Group-III nitride semiconductor light-emitting device and production method thereof
JP2002270896A (en) * 2001-03-14 2002-09-20 Showa Denko Kk Iii nitride semiconductor light-emitting element and its manufacturing method
JP2002368260A (en) * 2001-06-04 2002-12-20 Showa Denko Kk Compound semiconductor light-emitting element, manufacturing method therefor, lamp and light source

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5452464A (en) * 1978-09-14 1979-04-25 Tdk Corp Manufacture of boron phosphide semiconductor
JPH0513071U (en) * 1991-07-30 1993-02-19 日立電線株式会社 Compound semiconductor optical device
KR100305572B1 (en) * 1998-12-02 2001-11-22 이형도 Light emitting diodes and manufacturing method
JP2001077414A (en) * 1999-09-07 2001-03-23 Showa Denko Kk Group iii nitride semiconductor light-emitting diode
JP2002064221A (en) * 2000-08-18 2002-02-28 Hitachi Cable Ltd Light-emitting diode

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107648A (en) * 1997-03-13 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device having a structure which relieves lattice mismatch
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
DE19755009C1 (en) * 1997-12-11 1999-08-19 Vishay Semiconductor Gmbh LED structure is produced with reduced dislocation density and lattice stress
JPH10242567A (en) * 1998-04-06 1998-09-11 Toshiba Corp Semiconductor laser
JP2000058451A (en) * 1998-08-06 2000-02-25 Showa Denko Kk Compound semiconductor element and its manufacture thereof
US20010054717A1 (en) * 2000-06-22 2001-12-27 Showa Denko K.K Group-III nitride semiconductor light-emitting device and production method thereof
JP2002270896A (en) * 2001-03-14 2002-09-20 Showa Denko Kk Iii nitride semiconductor light-emitting element and its manufacturing method
JP2002368260A (en) * 2001-06-04 2002-12-20 Showa Denko Kk Compound semiconductor light-emitting element, manufacturing method therefor, lamp and light source

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004070846A1 *

Also Published As

Publication number Publication date
WO2004070846A1 (en) 2004-08-19
EP1593162A1 (en) 2005-11-09

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