EP1223625A2 - Nitride semiconductor chip and manufacturing method - Google Patents
Nitride semiconductor chip and manufacturing method Download PDFInfo
- Publication number
- EP1223625A2 EP1223625A2 EP02075046A EP02075046A EP1223625A2 EP 1223625 A2 EP1223625 A2 EP 1223625A2 EP 02075046 A EP02075046 A EP 02075046A EP 02075046 A EP02075046 A EP 02075046A EP 1223625 A2 EP1223625 A2 EP 1223625A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- semiconductor chip
- light emitting
- rhombus
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Definitions
- the present invention relates to a nitride semiconductor device and a method for manufacturing a nitride semiconductor device, and in particular to cutting of a substrate (wafer) onto which nitride crystals are formed.
- nitride crystals such as gallium nitride (GaN) for applications including, for example, light emitting devices such as blue LEDs.
- GaN gallium nitride
- Most such nitride crystals are of a wurtzite type having a hexagonal system, with the C axis of the nitride crystals being perpendicular to the substrate plane.
- Fig. 5 schematically shows a crystal structure of a nitride crystal.
- the nitride crystals can be grown on a substrate such as sapphire substrate using a method such as MOCVD.
- the C axis of the crystals will be perpendicular to the substrate (wafer)surface.
- the substrate After the crystals are grown using MOCVD or the like, the substrate must be divided or cut into chips for use as devices such as light emitting elements. Commonly, the back surface of the substrate is first ground and then scratches are made on the front or back side of the substrate using a diamond pen or the like. To realize the desired cuts, the substrate is ground to a thickness of 100 ⁇ m or less, and preferably to a thickness of 70 ⁇ m or less. After the substrate is ground to the desired thickness, the substrate is cut along the direction of the scratches, to thereby create rectangular semiconductor chips.
- the present invention was conceived to solve the above mentioned problem, and one object of the present invention is to provide a method which can simplify the processes of manufacturing a semiconductor by cutting a wafer onto which nitride crystals have been grown. Another object of the present invention is to provide a semiconductor chip which has superior characteristics.
- a manufacturing method comprising the steps of growing nitride crystals having a hexagonal system on a substrate surface, and cutting the substrate in two directions which form a 120 degree angle.
- the two cutting directions are equivalent from the view of the crystal structure, and, thus, when a direction along which the substrate can easily be split is selected for one of the directions, the other direction will as a matter of course also be a direction along which the substrate can easily be split.
- This facilitates the cutting process and, because the cutting process is facilitated, processes related to the cutting process, such as, for example, substrate grinding processes and the scratching process can also be facilitated.
- the semiconductor chip is cut so that the planer shape of the chip becomes a rhombus.
- a semiconductor chip comprising a substrate and nitride crystals having a hexagonal system, formed on the substrate, wherein the planer shape of the semiconductor chip is a rhombus having an interior angle of 120 degrees .
- This shaping of the chip into a rhombus facilitates the wafer cutting process as explained above. As a result, chips can be more efficiently manufactured, and wafer usage efficiency can be improved.
- a light emitting section is formed at the central section of the semiconductor chip which is a rhombus, with the electrodes formed to pinch the light emitting section at two ends of the rhombus.
- sapphire can be used as the substrate.
- GaN for example, can be used as the nitride crystal. By using GaN, a light emitting element which emits light having a short wavelength can be obtained.
- Fig. 1 shows schematically the cutting directions of a substrate (wafer) 1 onto which nitride crystals of hexagonal system are formed.
- a substrate sapphire can be used.
- the nitride crystal gallium nitride (GaN) can be used.
- the element structure can be, substrate/n-GaN layer/InGaN light emitting layer/p-GaN layer, to obtain a light emitting element in a wavelength band between 370 and 550 nm.
- compositions as the nitride crystal, such as, for example, AlGaN (including a multi-layer quantum well of AlGaN/GaN, a multi-layer quantum well of AlGaN/AlGaN, and a multi-layer quantum well of AlGaN/InGaN) as the n layer, GaN or AlGaN (including a multi-layer quantum well of AlGaN/GaN, multi-layer quantum well of AlGaN/AlGaN, and a multi-layer quantum well of AlGaN/InGaN) as the light emitting layer, and AlGaN as the p layer, to obtain a light emitting element in a wavelength band between 300 and 370 nm.
- AlGaN including a multi-layer quantum well of AlGaN/GaN, a multi-layer quantum well of AlGaN/AlGaN, and a multi-layer quantum well of AlGaN/InGaN
- AlGaN as
- the wafer is cut along two directions forming a 120 degree angle to create the semiconductor chip of the light emitting element.
- a six-fold rotation symmetry is present with the c axis as the rotational axis, and thus, directions that form a 120 degree angle are equivalent from the view of the crystal structure. Therefore, if one direction is selected to be a direction where the wafer can easily be split, for example, a direction along the cleavage surface, the other direction will also be a direction where the wafer can easily be split. As such, cutting of the wafer can be significantly facilitated.
- Fig. 2 shows a cutting method.
- nitride crystals are grown on a substrate by an MOCVD method or the like (step S101) , the back surface of the substrate is ground (step S102), and a scratch is made on the front or back side of the substrate by a diamond pen or the like (step S103).
- the substrate is then cut along the direction of the scratch (step S104).
- the cutting directions are set to be two directions that are equivalent and where the substrate can easily be split, the substrate does not need to be ground to a thickness of 100 ⁇ m or less in the grinding process.
- the substrate can easily be cut even when the thickness is 100 ⁇ m or greater. Therefore, the time required for grinding the substrate can be shortened and grinding is not required to be as precise as in the related art.
- the example sapphire substrate can be cut even when it has a thickness of around 150 ⁇ m.
- the light emitting layer is channeled to the substrate and emitted from the lateral surfaces.
- the surface from which light is emitted is smooth, irregular reflections tend not to occur, and, therefore, the light can be more readily condensed than with conventional devices.
- Figs. 3A and 3B show a structure of a single semiconductor chip obtained by cutting a substrate in two direction that form a 120 degree angle as shown in Fig. 1.
- Fig. 3A is a plane diagram of the chip and
- Fig. 3B is a cross sectional diagram of the chip along line b-b.
- n-GaN layers 12 and 14 are formed on a sapphire substrate 10 and an InGaN light emitting layer 16 is formed on the n-GaN layer 14.
- a p-GaN layer 18 is formed on the light emitting layer 16, and an etching process to partially expose the n-GaN layer 12 is performed so that a p electrode 20 is formed on the p-GaN layer 18 and an n electrode 22 is formed on the n-GaN layer 12.
- a transparent electrode 24 formed of, for example, ZnO is formed on the p-GaN layer 18 to cover the light emitting layer 16 touching the p electrode 20.
- the wafer is cut after the p electrode 20, n electrode 22, and transparent electrode 24 have all been formed.
- a semiconductor chip having a planer shape of rhombus as shown in Fig. 3A is obtained as a result of the cutting process.
- the light emitting layer 16 is formed between the n-GaN layer 14 and the p-GaN layer 18.
- a light emitting section which is a portion of the light emitting layer 16 not covered by the p electrode 20 and that can emit light to the outside via the transparent electrode 24 is positioned at the central section of the rhombus.
- Triangular p electrode 20 and triangular n electrode 22 are positioned at both ends of the rhombus, that is, two ends of a longer diagonal line among the two diagonal lines of the rhombus. Two electrodes 20 and 22 pinch the light emitting section positioned at the central section of the rhombus.
- the effective light emitting area per unit area can be increased compared to a conventional semiconductor chip as shown in Fig. 4 having a square shape and square shaped electrodes formed at its corners.
- mea area refers to the portion where the p-GaN layer 18 is formed and a gap of 20 ⁇ m is formed to surround the mesa. From this table, it can be seen that the light emitting area per unit area, E/A, of the rhombus chip is about 1.2 times that of the conventional rectangular semiconductor chip.
- the percentage of the regionpinched by both electrodes in the light emitting section is larger and it is easier to apply uniform electric current to the light emitting section than in a case where electrodes are provided at the corners, at both ends of a diagonal line, in a rectangular semiconductor chip as shown in Fig. 4.
- the light extraction efficiency can be improved.
- a thick transparent electrode 102 In order to apply electric current to the region 100 on a diagonal line other than the diagonal line on which electrodes are formed in a rectangular semiconductor chip as shown in Fig. 4, a thick transparent electrode 102 must be formed on the p layer.
- the example diode according to the present embodiment does not require formation of such a thick transparent electrode.
- the structure can be simplified and the light emitting efficiency can be improved.
- the inventors have found that when light emitting elements of a rectangular shape and of a rhombus shape are prepared under similar conditions, the light emitting efficiency of the rhombus shaped light emitting element is about 1.5 times that of the rectangular light emitting element.
- the inventors have also confirmed that the number of light emitting elements that can be cut out from and manufactured from one unit of wafer can be increased by about 10 to 20 % when rhomboidal chips are produced.
- a wafer can be easily cut to produce semiconductor chips.
- the semiconductor device according to the present invention the light emitting efficiency can be improved by forming chips having a planer shape of a rhombus.
Abstract
Description
- The present invention relates to a nitride semiconductor device and a method for manufacturing a nitride semiconductor device, and in particular to cutting of a substrate (wafer) onto which nitride crystals are formed.
- In recent years, semiconductor devices have been developed which use nitride crystals such as gallium nitride (GaN) for applications including, for example, light emitting devices such as blue LEDs. Most such nitride crystals are of a wurtzite type having a hexagonal system, with the C axis of the nitride crystals being perpendicular to the substrate plane.
- Fig. 5 schematically shows a crystal structure of a nitride crystal. The nitride crystals can be grown on a substrate such as sapphire substrate using a method such as MOCVD. The C axis of the crystals will be perpendicular to the substrate (wafer)surface.
- After the crystals are grown using MOCVD or the like, the substrate must be divided or cut into chips for use as devices such as light emitting elements. Commonly, the back surface of the substrate is first ground and then scratches are made on the front or back side of the substrate using a diamond pen or the like. To realize the desired cuts, the substrate is ground to a thickness of 100 µm or less, and preferably to a thickness of 70 µm or less. After the substrate is ground to the desired thickness, the substrate is cut along the direction of the scratches, to thereby create rectangular semiconductor chips.
- However, with the above processes grinding the substrate to a thickness of 70 µm so that it will easily split, very easily results in the substrate breaking or splitting during grinding, which is obviously costly and undesirable. To avoid this, a highly precise, very slow grinding process must be performed, which is also expensive and undesirable.
- The present invention was conceived to solve the above mentioned problem, and one object of the present invention is to provide a method which can simplify the processes of manufacturing a semiconductor by cutting a wafer onto which nitride crystals have been grown. Another object of the present invention is to provide a semiconductor chip which has superior characteristics.
- According to one aspect of the present invention, there is provided a manufacturing method comprising the steps of growing nitride crystals having a hexagonal system on a substrate surface, and cutting the substrate in two directions which form a 120 degree angle. By setting the cutting direction for crystals having a hexagonal system, that is, a six-fold rotation symmetry, in two directions that form a 120 degree angle, the two cutting directions are equivalent from the view of the crystal structure, and, thus, when a direction along which the substrate can easily be split is selected for one of the directions, the other direction will as a matter of course also be a direction along which the substrate can easily be split. This facilitates the cutting process and, because the cutting process is facilitated, processes related to the cutting process, such as, for example, substrate grinding processes and the scratching process can also be facilitated.
- According to another aspect of the present invention, it is preferable that the semiconductor chip is cut so that the planer shape of the chip becomes a rhombus.
- According to another aspect of the present invention, there is provided a semiconductor chip comprising a substrate and nitride crystals having a hexagonal system, formed on the substrate, wherein the planer shape of the semiconductor chip is a rhombus having an interior angle of 120 degrees . This shaping of the chip into a rhombus, facilitates the wafer cutting process as explained above. As a result, chips can be more efficiently manufactured, and wafer usage efficiency can be improved.
- According to still another aspect of the present invention, it is preferable that a light emitting section is formed at the central section of the semiconductor chip which is a rhombus, with the electrodes formed to pinch the light emitting section at two ends of the rhombus. By employing this configuration, uniform electric current can be applied throughout the light emitting section, and the light emitting percentage can be improved.
- According to a still further aspect of the present invention, sapphire can be used as the substrate. According to yet another aspect of the present invention, GaN, for example, can be used as the nitride crystal. By using GaN, a light emitting element which emits light having a short wavelength can be obtained.
-
- Fig. 1 is a diagram for explaining cutting directions according the present invention.
- Fig. 2 is a flowchart for the manufacturing method according to the present invention.
- Fig. 3A is a plane view of a semiconductor chip according to the present invention.
- Fig. 3B is a cross sectional view of the semiconductor chip shown in Fig. 3A.
- Fig. 4 is a plane view of a rectangular semiconductor chip.
- Fig. 5 is a diagram for explaining a nitride crystal.
-
- A preferred embodiment of the present invention as exemplified by a light emitting element will be described while referring to the figures.
- Fig. 1 shows schematically the cutting directions of a substrate (wafer) 1 onto which nitride crystals of hexagonal system are formed. As a substrate, sapphire can be used. As the nitride crystal, gallium nitride (GaN) can be used. More specifically, the element structure can be, substrate/n-GaN layer/InGaN light emitting layer/p-GaN layer, to obtain a light emitting element in a wavelength band between 370 and 550 nm. It is also possible to employ other compositions as the nitride crystal, such as, for example, AlGaN (including a multi-layer quantum well of AlGaN/GaN, a multi-layer quantum well of AlGaN/AlGaN, and a multi-layer quantum well of AlGaN/InGaN) as the n layer, GaN or AlGaN (including a multi-layer quantum well of AlGaN/GaN, multi-layer quantum well of AlGaN/AlGaN, and a multi-layer quantum well of AlGaN/InGaN) as the light emitting layer, and AlGaN as the p layer, to obtain a light emitting element in a wavelength band between 300 and 370 nm.
- In the embodiment shown in Fig. 1, the wafer is cut along two directions forming a 120 degree angle to create the semiconductor chip of the light emitting element. On the surface of the wafer, a six-fold rotation symmetry is present with the c axis as the rotational axis, and thus, directions that form a 120 degree angle are equivalent from the view of the crystal structure. Therefore, if one direction is selected to be a direction where the wafer can easily be split, for example, a direction along the cleavage surface, the other direction will also be a direction where the wafer can easily be split. As such, cutting of the wafer can be significantly facilitated. Fig. 2 shows a cutting method. First, nitride crystals are grown on a substrate by an MOCVD method or the like (step S101) , the back surface of the substrate is ground (step S102), and a scratch is made on the front or back side of the substrate by a diamond pen or the like (step S103). The substrate is then cut along the direction of the scratch (step S104). In the example of the present embodiment, because the cutting directions are set to be two directions that are equivalent and where the substrate can easily be split, the substrate does not need to be ground to a thickness of 100 µm or less in the grinding process. The substrate can easily be cut even when the thickness is 100 µm or greater. Therefore, the time required for grinding the substrate can be shortened and grinding is not required to be as precise as in the related art. With the present invention, the example sapphire substrate can be cut even when it has a thickness of around 150 µm.
- When a substrate not having a cubic structure is cut in directions along which the substrate can easily be split, the cut surface is smoother than it would be if cut in two perpendicular directions. When such a substrate is cut in two perpendicular directions, when one direction is a direction along which the substrate can easily be split, the crystal structure forces the other direction to be one along which the substrate will not readily split. As a result, roughness or unevenness will result along the surface of the second cut.
- Also, in general, a large portion of the light emitted from the light emitting layer is channeled to the substrate and emitted from the lateral surfaces. In the example light emitting diode of the present embodiment, because the surface from which light is emitted (the cut surface) is smooth, irregular reflections tend not to occur, and, therefore, the light can be more readily condensed than with conventional devices.
- With the method of the preferred embodiment, because the splitting directions are determined by the crystal axis, scratching need not be as precise as required with the conventional art, and a precision of +/- 5 degrees would be sufficient to obtain a chip with superior surface edges. Because scratching of the substrate is therefore simplified, it is possible to narrow the space for scratching and, as a result, to increase the effective light emitting area obtained from a unit area of wafer.
- Figs. 3A and 3B show a structure of a single semiconductor chip obtained by cutting a substrate in two direction that form a 120 degree angle as shown in Fig. 1. Fig. 3A is a plane diagram of the chip and Fig. 3B is a cross sectional diagram of the chip along line b-b. As shown in Fig. 3B, n-
GaN layers sapphire substrate 10 and an InGaNlight emitting layer 16 is formed on the n-GaN layer 14. A p-GaN layer 18 is formed on thelight emitting layer 16, and an etching process to partially expose the n-GaN layer 12 is performed so thata p electrode 20 is formed on the p-GaN layer 18 and ann electrode 22 is formed on the n-GaN layer 12. Atransparent electrode 24 formed of, for example, ZnO is formed on the p-GaN layer 18 to cover thelight emitting layer 16 touching thep electrode 20. The wafer is cut after thep electrode 20,n electrode 22, andtransparent electrode 24 have all been formed. A semiconductor chip having a planer shape of rhombus as shown in Fig. 3A is obtained as a result of the cutting process. - The shape of the semiconductor chip according to the preferred embodiment will now be described in detail. The
light emitting layer 16 is formed between the n-GaN layer 14 and the p-GaN layer 18. In the plane view, a light emitting section which is a portion of thelight emitting layer 16 not covered by thep electrode 20 and that can emit light to the outside via thetransparent electrode 24 is positioned at the central section of the rhombus.Triangular p electrode 20 andtriangular n electrode 22 are positioned at both ends of the rhombus, that is, two ends of a longer diagonal line among the two diagonal lines of the rhombus. Twoelectrodes - The following table shows a comparison of the features of the rhombus shaped semiconductor chips of the preferred embodiment with those of conventional square or rectangular shaped semiconductor chips.
Rectangular Rhombus Chip Area (A) 90000 µm2 (Length of one Side=300 µm) 77942 µm2 (Length of one side=300 µm) Mesa Area (B) 260 X 260 µm2=67600 µm2 60999 µm2 (Length of one side=265.4 µm) p Electrode Area (C) 70 X 70 µm=4900 µm2 2122 µm2(Equilateral Triangle with 70µm Sides) Etching Area for n Electrode (D) 80 X 80 µm=6400 µm2 2122 µm2 (Equilateral Triangle with 70 µm Sides) Light Emitting Area (E)
E=B-C-D56300 µm2 56755 µm2 E/A 0.625 0.728 - Here, "mesa area" refers to the portion where the p-
GaN layer 18 is formed and a gap of 20 µm is formed to surround the mesa. From this table, it can be seen that the light emitting area per unit area, E/A, of the rhombus chip is about 1.2 times that of the conventional rectangular semiconductor chip. - Because the
p electrode 20 and then electrode 22 are placed along the length direction (direction along the longer diagonal line) of the semiconductor chip, the percentage of the regionpinched by both electrodes in the light emitting section is larger and it is easier to apply uniform electric current to the light emitting section than in a case where electrodes are provided at the corners, at both ends of a diagonal line, in a rectangular semiconductor chip as shown in Fig. 4. Thus, the light extraction efficiency can be improved. In order to apply electric current to theregion 100 on a diagonal line other than the diagonal line on which electrodes are formed in a rectangular semiconductor chip as shown in Fig. 4, a thicktransparent electrode 102 must be formed on the p layer. The example diode according to the present embodiment, on the other hand, does not require formation of such a thick transparent electrode. - In this manner, with the example rhombus shaped semiconductor chip of the preferred embodiment, the structure can be simplified and the light emitting efficiency can be improved. The inventors have found that when light emitting elements of a rectangular shape and of a rhombus shape are prepared under similar conditions, the light emitting efficiency of the rhombus shaped light emitting element is about 1.5 times that of the rectangular light emitting element. The inventors have also confirmed that the number of light emitting elements that can be cut out from and manufactured from one unit of wafer can be increased by about 10 to 20 % when rhomboidal chips are produced.
- As described above, according to the present invention, a wafer can be easily cut to produce semiconductor chips. With the semiconductor device according to the present invention, the light emitting efficiency can be improved by forming chips having a planer shape of a rhombus.
Claims (11)
- A method for manufacturing a nitride semiconductor chip, said method comprising the steps of:growing nitride crystals of a hexagonal system on a substrate surface; andcutting said substrate along two directions that form a 120 degree angle.
- A method according to claim 1, further comprising, between said growing step and said cutting step, the step of grinding the back surface of said substrate.
- A method according to claim 2, further comprising the step of:making scratches on the front or back surface of said substrate, between said grinding step and said cutting step, whereinsaid cutting step is performed by cutting said substrate along the directions of said scratches.
- A method according to claim 1, wherein said semiconductor chip has a planer shape of a rhombus.
- A method according to claim 1, wherein said substrate is sapphire.
- A method according to claim 1, wherein said nitride crystals include GaN.
- A nitride semiconductor chip, comprising:a substrate; andnitride crystals of a hexagonal system and formed on said substrate; whereinthe planer shape of said semiconductor chip is a rhombus having an interior angle of 120 degrees.
- A semiconductor chip according to claim 7, further comprising:a light emitting section formed on the central section of said rhombus of the planer shape of said semiconductor chip; andelectrode sections formed at both ends of said rhombus to pinch said light emitting section.
- A semiconductor chip according to claim 8, wherein the planer shape of said electrode sections is triangular.
- A semiconductor chip according to claim 7, wherein said substrate is sapphire.
- A semiconductor chip according to claim 7, wherein said nitride crystals include GaN.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001003910 | 2001-01-11 | ||
JP2001003910A JP2002208541A (en) | 2001-01-11 | 2001-01-11 | Nitride-based semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1223625A2 true EP1223625A2 (en) | 2002-07-17 |
EP1223625A3 EP1223625A3 (en) | 2004-12-01 |
Family
ID=18872175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02075046A Withdrawn EP1223625A3 (en) | 2001-01-11 | 2002-01-08 | Nitride semiconductor chip and manufacturing method |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020124794A1 (en) |
EP (1) | EP1223625A3 (en) |
JP (1) | JP2002208541A (en) |
KR (1) | KR20020060617A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569861B2 (en) | 2002-08-29 | 2009-08-04 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4034208B2 (en) * | 2003-02-25 | 2008-01-16 | ローム株式会社 | Transparent electrode |
KR20040104265A (en) * | 2003-06-03 | 2004-12-10 | 삼성전기주식회사 | Fabrication method of InAlGaN LED device |
US20050127374A1 (en) * | 2003-12-16 | 2005-06-16 | Chao-Huang Lin | Light-emitting device and forming method thereof |
KR100850667B1 (en) * | 2007-05-22 | 2008-08-07 | 서울옵토디바이스주식회사 | Light emitting diode and method of fabricating the same |
US8101447B2 (en) * | 2007-12-20 | 2012-01-24 | Tekcore Co., Ltd. | Light emitting diode element and method for fabricating the same |
KR101259483B1 (en) * | 2011-06-01 | 2013-05-06 | 서울옵토디바이스주식회사 | Semiconductor light emitting device and method for menufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294493A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting device |
US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3909929A (en) * | 1973-12-26 | 1975-10-07 | Gen Electric | Method of making contacts to semiconductor light conversion elements |
US4939619A (en) * | 1987-01-26 | 1990-07-03 | Northern Telecom Limited | Packaged solid-state surge protector |
US4985113A (en) * | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
US5639689A (en) * | 1993-12-29 | 1997-06-17 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating storage electrode of semiconductor device |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
JPH08250768A (en) * | 1995-03-13 | 1996-09-27 | Toyoda Gosei Co Ltd | Semiconductor optical element |
JP3557011B2 (en) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
US5900650A (en) * | 1995-08-31 | 1999-05-04 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
AU6946196A (en) * | 1995-09-18 | 1997-04-09 | Hitachi Limited | Semiconductor material, method of producing the semiconductor material, and semiconductor device |
JPH09237962A (en) * | 1995-12-28 | 1997-09-09 | Sanyo Electric Co Ltd | Electronic circuit device |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5786233A (en) * | 1996-02-20 | 1998-07-28 | U.S. Philips Corporation | Photo-assisted annealing process for activation of acceptors in semiconductor compound layers |
US6030848A (en) * | 1996-06-28 | 2000-02-29 | Kabushiki Kaisha Toshiba | Method for manufacturing a GaN-based compound semiconductor light emitting device |
CN100485984C (en) * | 1997-01-09 | 2009-05-06 | 日亚化学工业株式会社 | Nitride semiconductor device |
JPH10261772A (en) * | 1997-01-14 | 1998-09-29 | Mitsubishi Electric Corp | Semiconductor storage device and its manufacture |
US6103604A (en) * | 1997-02-10 | 2000-08-15 | Trw Inc. | High electron mobility transparent conductor |
US5888886A (en) * | 1997-06-30 | 1999-03-30 | Sdl, Inc. | Method of doping gan layers p-type for device fabrication |
US6266355B1 (en) * | 1997-09-12 | 2001-07-24 | Sdl, Inc. | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
JP3727449B2 (en) * | 1997-09-30 | 2005-12-14 | シャープ株式会社 | Method for producing semiconductor nanocrystal |
US6335217B1 (en) * | 1997-10-10 | 2002-01-01 | Toyoda Gosei Co., Ltd. | GaN type semiconductor device fabrication |
KR100499117B1 (en) * | 1998-05-08 | 2005-07-04 | 삼성전자주식회사 | Method for activating compound semiconductor layer |
JPH11340576A (en) * | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor device |
JP2000022128A (en) * | 1998-07-06 | 2000-01-21 | Murata Mfg Co Ltd | Semiconductor light-emitting device and optoelectronic integrated circuit device |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US6580098B1 (en) * | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
US6657236B1 (en) * | 1999-12-03 | 2003-12-02 | Cree Lighting Company | Enhanced light extraction in LEDs through the use of internal and external optical elements |
TW439304B (en) * | 2000-01-05 | 2001-06-07 | Ind Tech Res Inst | GaN series III-V compound semiconductor devices |
TW449931B (en) * | 2000-01-27 | 2001-08-11 | United Epitaxy Co Ltd | Manufacturing method of P-type semiconductor with a low resistance coefficient |
US6621192B2 (en) * | 2000-07-13 | 2003-09-16 | Rutgers, The State University Of New Jersey | Integrated tunable surface acoustic wave technology and sensors provided thereby |
TW579608B (en) * | 2000-11-24 | 2004-03-11 | High Link Technology Corp | Method and structure of forming electrode for light emitting device |
CN100504496C (en) * | 2001-01-30 | 2009-06-24 | 松下电器产业株式会社 | Deformable mirror and information apparatus comprising the deformable mirror |
-
2001
- 2001-01-11 JP JP2001003910A patent/JP2002208541A/en active Pending
-
2002
- 2002-01-08 EP EP02075046A patent/EP1223625A3/en not_active Withdrawn
- 2002-01-10 KR KR1020020001554A patent/KR20020060617A/en not_active Application Discontinuation
- 2002-01-11 US US10/044,686 patent/US20020124794A1/en not_active Abandoned
-
2005
- 2005-08-17 US US11/205,476 patent/US20060040500A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294493A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting device |
US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569861B2 (en) | 2002-08-29 | 2009-08-04 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements |
US7615793B2 (en) | 2002-08-29 | 2009-11-10 | Seoul Semiconductor Co., Ltd. | AC driven light—emitting device |
US7646031B2 (en) | 2002-08-29 | 2010-01-12 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements |
US7667237B2 (en) | 2002-08-29 | 2010-02-23 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements |
US7897982B2 (en) | 2002-08-29 | 2011-03-01 | Seoul Semiconductor Co., Ltd. | Light emitting device having common N-electrode |
US7956367B2 (en) | 2002-08-29 | 2011-06-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting elements connected in series |
US8084774B2 (en) | 2002-08-29 | 2011-12-27 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements |
US8097889B2 (en) | 2002-08-29 | 2012-01-17 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements with a shared electrode |
US8129729B2 (en) | 2002-08-29 | 2012-03-06 | Seoul Semiconductor Co., Ltd. | Light emitting device having light emitting elements and an air bridge line |
US8680533B2 (en) | 2002-08-29 | 2014-03-25 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting elements with a shared electrode |
US8735911B2 (en) | 2002-08-29 | 2014-05-27 | Seoul Semiconductor Co., Ltd. | Light emitting device having shared electrodes |
US8735918B2 (en) | 2002-08-29 | 2014-05-27 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting elements with polygonal shape |
US9947717B2 (en) | 2002-08-29 | 2018-04-17 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting elements and electrode spaced apart from the light emitting element |
Also Published As
Publication number | Publication date |
---|---|
JP2002208541A (en) | 2002-07-26 |
US20020124794A1 (en) | 2002-09-12 |
EP1223625A3 (en) | 2004-12-01 |
US20060040500A1 (en) | 2006-02-23 |
KR20020060617A (en) | 2002-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7704763B2 (en) | Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface | |
CN101015070B (en) | Method for fabrication of semiconductor light-emitting device and the device fabricated by the method | |
WO2010050410A1 (en) | Method for manufacturing semiconductor light emitting element | |
WO2011145370A1 (en) | Semiconductor light emitting chip and method for processing substrate | |
US20060040500A1 (en) | Nitride semiconductor chip and method for manufacturing nitride semiconductor chip | |
JP2011071540A (en) | Manufacturing method of nitride semiconductor light emitting element | |
KR101035878B1 (en) | Group ? nitride semiconductor light-emitting device | |
JP2002368261A (en) | Nitride compound semiconductor light-emitting device | |
JP2001284291A (en) | Chip division method for semiconductor wafer | |
JP4710148B2 (en) | Manufacturing method of nitride semiconductor chip | |
JP2748355B2 (en) | Method of manufacturing gallium nitride based compound semiconductor chip | |
CN102903814A (en) | Method of manufacturing semiconductor light emitting device | |
JP5377016B2 (en) | Manufacturing method of semiconductor device | |
US8124969B2 (en) | Semiconductor light emitting element and method for manufacturing the same | |
JP3338360B2 (en) | Gallium nitride based semiconductor wafer manufacturing method | |
KR100550857B1 (en) | Method for separating sapphire wafer into chips using dry-etching | |
US20040169185A1 (en) | High luminescent light emitting diode | |
WO2013054917A1 (en) | Semiconductor element and manufacturing method thereof | |
JP4964430B2 (en) | Semiconductor element forming substrate, epitaxial wafer, and semiconductor element and semiconductor device using them | |
JP2013038208A (en) | Light-emitting device and manufacturing method of the same | |
KR100631419B1 (en) | Method of manufacturing gan type light emitting diode device | |
JP2002124489A (en) | Method of manufacturing semiconductor light emitting device | |
KR101578480B1 (en) | Semiconductor light emitting device and method of manufacturing the same | |
CN1357928A (en) | Semiconductor photoelectronic device with non-rectangular substrate and its manufacture | |
JP2020113584A (en) | Manufacturing method for light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: 7H 01L 33/00 A |
|
17P | Request for examination filed |
Effective date: 20050131 |
|
AKX | Designation fees paid |
Designated state(s): DE FR GB SE |
|
17Q | First examination report despatched |
Effective date: 20050801 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20070321 |