EP0972310A1 - Method for fabricating low-resistance contacts on nitride semiconductor devices - Google Patents
Method for fabricating low-resistance contacts on nitride semiconductor devicesInfo
- Publication number
- EP0972310A1 EP0972310A1 EP98906549A EP98906549A EP0972310A1 EP 0972310 A1 EP0972310 A1 EP 0972310A1 EP 98906549 A EP98906549 A EP 98906549A EP 98906549 A EP98906549 A EP 98906549A EP 0972310 A1 EP0972310 A1 EP 0972310A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- semiconductor
- contact
- gan
- metallic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3770597A JPH10242074A (en) | 1997-02-21 | 1997-02-21 | Manufacturing method of nitride semiconductor element |
JP3770597 | 1997-02-21 | ||
PCT/US1998/003146 WO1998037586A1 (en) | 1997-02-21 | 1998-02-18 | Method for fabricating low-resistance contacts on nitride semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0972310A1 true EP0972310A1 (en) | 2000-01-19 |
Family
ID=12504952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98906549A Withdrawn EP0972310A1 (en) | 1997-02-21 | 1998-02-18 | Method for fabricating low-resistance contacts on nitride semiconductor devices |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0972310A1 (en) |
JP (1) | JPH10242074A (en) |
WO (1) | WO1998037586A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
WO2000052796A1 (en) | 1999-03-04 | 2000-09-08 | Nichia Corporation | Nitride semiconductor laser element |
AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
CN100356594C (en) * | 2004-12-08 | 2007-12-19 | 深圳市方大国科光电技术有限公司 | Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69433926T2 (en) * | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | A semiconductor device of a gallium nitride III-V semiconductor compound |
-
1997
- 1997-02-21 JP JP3770597A patent/JPH10242074A/en active Pending
-
1998
- 1998-02-18 WO PCT/US1998/003146 patent/WO1998037586A1/en not_active Application Discontinuation
- 1998-02-18 EP EP98906549A patent/EP0972310A1/en not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO9837586A1 * |
Also Published As
Publication number | Publication date |
---|---|
JPH10242074A (en) | 1998-09-11 |
WO1998037586A1 (en) | 1998-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19990722 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: HEWLETT-PACKARD COMPANY, A DELAWARE CORPORATION |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: AGILENT TECHNOLOGIES INC. |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: AGILENT TECHNOLOGIES INC. A DELAWARE CORPORATION |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION |
|
18W | Application withdrawn |
Withdrawal date: 20010920 |