EP0959146A3 - Dual chamber ion beam sputter deposition system - Google Patents

Dual chamber ion beam sputter deposition system Download PDF

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Publication number
EP0959146A3
EP0959146A3 EP99303187A EP99303187A EP0959146A3 EP 0959146 A3 EP0959146 A3 EP 0959146A3 EP 99303187 A EP99303187 A EP 99303187A EP 99303187 A EP99303187 A EP 99303187A EP 0959146 A3 EP0959146 A3 EP 0959146A3
Authority
EP
European Patent Office
Prior art keywords
deposition
ion beam
depositions
ibs
dual chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99303187A
Other languages
German (de)
French (fr)
Other versions
EP0959146B1 (en
EP0959146A2 (en
Inventor
Mustafa Pinarbasi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HGST Netherlands BV
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0959146A2 publication Critical patent/EP0959146A2/en
Publication of EP0959146A3 publication Critical patent/EP0959146A3/en
Application granted granted Critical
Publication of EP0959146B1 publication Critical patent/EP0959146B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Abstract

A dual chamber deposition system (300) comprising two ion beam sputtering (IBS) deposition chambers (302,304) connected by a wafer handler chamber (306) for depositions of multilayer thin film structures with improved process throughput. Reactive ion beam sputtering depositions and metal layer depositions on a substrate may be carried out in separate IBS deposition chambers while maintaining vacuum conditions throughout the process. A process for ion beam sputter deposition of spin valve (SV) magnetoresistive sensor layers having an AFM layer formed of NiO where reactive sputtering deposition of the NiO is carried out in a separate IBS deposition chamber from the subsequent metal layer depositions improves system throughput while maintaining SV sensor performance.
EP99303187A 1998-05-21 1999-04-23 Dual chamber ion beam sputter deposition system Expired - Lifetime EP0959146B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/083,372 US6063244A (en) 1998-05-21 1998-05-21 Dual chamber ion beam sputter deposition system
US83372 1998-05-21

Publications (3)

Publication Number Publication Date
EP0959146A2 EP0959146A2 (en) 1999-11-24
EP0959146A3 true EP0959146A3 (en) 2002-06-05
EP0959146B1 EP0959146B1 (en) 2007-07-25

Family

ID=22177883

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99303187A Expired - Lifetime EP0959146B1 (en) 1998-05-21 1999-04-23 Dual chamber ion beam sputter deposition system

Country Status (8)

Country Link
US (1) US6063244A (en)
EP (1) EP0959146B1 (en)
JP (1) JP3131422B2 (en)
KR (1) KR100318120B1 (en)
CN (1) CN1214131C (en)
DE (1) DE69936610T2 (en)
MY (1) MY116794A (en)
SG (1) SG83127A1 (en)

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US6201671B1 (en) * 1998-12-04 2001-03-13 International Business Machines Corporation Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
US6478931B1 (en) 1999-08-06 2002-11-12 University Of Virginia Patent Foundation Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
JP2002167661A (en) * 2000-11-30 2002-06-11 Anelva Corp Magnetic multilayered film deposition system
US6716322B1 (en) 2001-04-19 2004-04-06 Veeco Instruments Inc. Method and apparatus for controlling film profiles on topographic features
US6709767B2 (en) 2001-07-31 2004-03-23 Hitachi Global Storage Technologies Netherlands B.V. In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
JP2003209097A (en) * 2001-08-29 2003-07-25 Tokyo Electron Ltd Wafer treatment machine
JP2003083249A (en) * 2001-09-17 2003-03-19 Boc Edwards Technologies Ltd Vacuum pump
US6732421B2 (en) * 2002-03-22 2004-05-11 Seagate Technology Llc Method for producing magnetoresistive heads ion bombardment etch to stripe height
US20040045671A1 (en) * 2002-09-10 2004-03-11 Ed Rejda Selective etching device
US6937448B2 (en) * 2002-11-13 2005-08-30 Hitachi Global Storage Technologies Netherlands, B.V. Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures
US7312958B2 (en) 2002-12-05 2007-12-25 Matsushita Electric Industrial Co., Ltd Method for manufacturing magnetic disk apparatus
KR100504484B1 (en) * 2002-12-07 2005-08-01 엘지전자 주식회사 apparatus for mass production of organic electroluminescence display device
US6868921B2 (en) 2003-01-13 2005-03-22 Merlin Technology, Inc. Boring tool tracking fundamentally based on drill string length, pitch and roll
WO2005043012A2 (en) * 2003-10-28 2005-05-12 Halliburton Energy Services, Inc. Ion-beam assisted deposition of inorganic coatings for elastomeric seal wear resistance improvement
US20050092253A1 (en) * 2003-11-04 2005-05-05 Venkat Selvamanickam Tape-manufacturing system having extended operational capabilites
US7270854B2 (en) * 2003-11-19 2007-09-18 Hitachi Global Storage Technologies Netherlands B.V. Method for forming a head having improved spin valve properties
JP2006086468A (en) * 2004-09-17 2006-03-30 Canon Anelva Corp Method and apparatus for manufacturing magnetoresistive film
US7608308B2 (en) * 2006-04-17 2009-10-27 Imra America, Inc. P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
US8308921B1 (en) 2006-12-21 2012-11-13 Western Digital (Fremont), Llc Mask for increased uniformity in ion beam deposition
US7997227B2 (en) * 2007-03-13 2011-08-16 General Electric Company Vacuum coater device and mechanism for supporting and manipulating workpieces in same
JP4891354B2 (en) * 2009-01-14 2012-03-07 キヤノンアネルバ株式会社 Magnetoresistive device manufacturing method and manufacturing apparatus
CN101880862B (en) * 2009-05-06 2011-12-07 中国科学院微电子研究所 Multifunctional ion beam sputtering equipment
US9347127B2 (en) * 2012-07-16 2016-05-24 Veeco Instruments, Inc. Film deposition assisted by angular selective etch on a surface
CN104630737B (en) * 2013-11-13 2017-02-08 中国科学院沈阳科学仪器股份有限公司 Transmission system used in five-chamber automatic electron beam deposition system
JP6457307B2 (en) * 2015-03-16 2019-01-23 東芝メモリ株式会社 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
US9988711B2 (en) * 2015-05-14 2018-06-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multilayer deposition
KR20210039825A (en) * 2019-10-02 2021-04-12 삼성전자주식회사 An apparatus for depositing a substrate and a deposition system having the same

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US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5492605A (en) * 1992-08-24 1996-02-20 International Business Machines Corporation Ion beam induced sputtered multilayered magnetic structures
JPH08129721A (en) * 1994-09-08 1996-05-21 Sumitomo Metal Ind Ltd Production of nio antiferromagnetic film, production of magnetoresistance effect element and its element
EP0751499A1 (en) * 1995-06-30 1997-01-02 International Business Machines Corporation Magnetoresistive sensor
US5611861A (en) * 1995-05-31 1997-03-18 Nec Corporation Rotary type apparatus for processing semiconductor wafers and method of processing semiconductor wafers
US5612098A (en) * 1996-08-14 1997-03-18 Read-Rite Corporation Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers
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Also Published As

Publication number Publication date
EP0959146B1 (en) 2007-07-25
SG83127A1 (en) 2001-09-18
US6063244A (en) 2000-05-16
KR100318120B1 (en) 2001-12-22
CN1236826A (en) 1999-12-01
EP0959146A2 (en) 1999-11-24
CN1214131C (en) 2005-08-10
KR19990087920A (en) 1999-12-27
JP3131422B2 (en) 2001-01-31
JP2000096230A (en) 2000-04-04
MY116794A (en) 2004-03-31
DE69936610D1 (en) 2007-09-06
DE69936610T2 (en) 2008-05-21

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