EP0862794B1 - Sealing material with wavelength converting effect and its production process, process of fabricating a light emitting semiconductor device and light emitting semiconductor device - Google Patents

Sealing material with wavelength converting effect and its production process, process of fabricating a light emitting semiconductor device and light emitting semiconductor device Download PDF

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Publication number
EP0862794B1
EP0862794B1 EP97909167A EP97909167A EP0862794B1 EP 0862794 B1 EP0862794 B1 EP 0862794B1 EP 97909167 A EP97909167 A EP 97909167A EP 97909167 A EP97909167 A EP 97909167A EP 0862794 B1 EP0862794 B1 EP 0862794B1
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EP
European Patent Office
Prior art keywords
light
weight
casting compound
luminescent pigments
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP97909167A
Other languages
German (de)
French (fr)
Other versions
EP0862794A1 (en
Inventor
Klaus Höhn
Alexandra Debray
Peter Schlotter
Ralf Schmidt
Jürgen Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to EP02007512A priority Critical patent/EP1221724B1/en
Priority to DE29724849U priority patent/DE29724849U1/en
Priority to DE29724382U priority patent/DE29724382U1/en
Priority to DE29724284U priority patent/DE29724284U1/en
Publication of EP0862794A1 publication Critical patent/EP0862794A1/en
Application granted granted Critical
Publication of EP0862794B1 publication Critical patent/EP0862794B1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7716—Chalcogenides
    • C09K11/7718—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7721—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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    • C09K11/7746—Chalcogenides with alkaline earth metals
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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    • C09K11/7749—Aluminates
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    • C—CHEMISTRY; METALLURGY
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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Definitions

  • the invention relates to a wavelength-converting casting compound based on a transparent epoxy casting resin, in particular for use with an electroluminescent Component with an ultraviolet, blue and / or green Light-emitting bodies, and a method for their production. It also relates to a method for producing one light-emitting semiconductor component and a light-emitting Semiconductor device.
  • EPC describes a light-emitting diode component in which a light-emitting diode chip with an emission spectrum in the ultraviolet, blue and green spectral range is embedded in a transparent casting compound, the inorganic phosphor pigments based on cerium-doped yttrium aluminum garnet (Y 3 Al 5 O 12 : Ce) contains.
  • LED arrays In many potential fields of application for light emitting diodes, such as for example for display elements in the automotive fittings area, lighting in airplanes and cars and in full color suitability LED displays, the demand for LED arrays is increasing with which mixed-colored light, in particular can produce white light.
  • JP-07 176 794-A there is a planar emitting white light Light source described in which a Transparent plate two blue light emitting diodes arranged that emit light into the transparent plate.
  • the transparent plate is on one of the two. the opposite main surfaces with a fluorescent Coated substance that emits light when used with the blue light of the diodes is excited. That of the fluorescent Substance emitted light has a different wavelength than the blue light emitted by the diodes.
  • It is particularly difficult to make the fluorescent component To apply substance in a way that the Light source emits homogeneous white light.
  • the present invention has for its object a Develop potting compound of the type mentioned, with the electroluminescent components can be produced, which emit homogeneous mixed-colored light and which are mass-produced with reasonable technical effort and with as much as possible reproducible component characteristic enables.
  • the emitted light should also at temperature and Temperature-moisture exposure to be color-stable. Furthermore is to specify a method for producing this potting compound become.
  • This task is performed by a potting compound with the characteristics of Claim 1 or with a method with the features of claim 9 solved.
  • a manufacturing process a light-emitting semiconductor component and a light-emitting semiconductor component is the subject of the claim 20 or 21.
  • an inorganic-mineral phosphor pigment powder based on a garnet host lattice with the general formula A 3 B 5 X 12 : M is dispersed in the transparent epoxy casting resin and that the phosphor pigments have grain sizes 20 20 ⁇ m and an average grain diameter d 50 5 5 ⁇ m ,
  • the average grain diameter d 50 is particularly preferably between 1 and 2 ⁇ m.
  • Favorable manufacturing yields can be obtained with these grain sizes.
  • Inorganic-mineral phosphors are advantageous extremely temperature and temperature stable.
  • Suitable epoxy casting resins are, for example, in DE-OS 26 42 465 on pages 4 to 9, especially examples 1 to 4, and in EP 0 039 017 on pages 2 to 5, in particular Examples 1 to 8 described.
  • Fumed silica for example, is a thixotropic agent used.
  • the thixotropic agent serves to thicken the Epoxy casting resin to the sedimentation of the luminous pigment powder to diminish.
  • the Flow and wetting properties set.
  • CaF 2 is preferably used as the mineral diffuser to optimize the luminous image of the component.
  • Glycol ether for example, is suitable as a processing aid. It improves the compatibility between epoxy resin and luminous pigment powder and thus serves for stabilization the dispersion luminous pigment powder - epoxy casting resin. To this Surface modifiers based on silicone can also be used be used.
  • the hydrophobizing agent e.g. B. liquid silicone wax also for modification of the pigment surface, in particular will the compatibility and wettability of the inorganic Improved pigment surface with the organic resin.
  • the adhesion promoter e.g. B. functional alkoxysiloxane, improved the adhesion between the pigments and the epoxy resin in the hardened condition of the sealing compound. This ensures that the interface between the epoxy resin and the pigments z. B. does not tear off with temperature fluctuations. Column between the epoxy resin and the pigments would lead to light losses in the Guide component.
  • the epoxy casting resin preferably with a reactive oxirane triple ring, preferably contains a mono- and / or a multifunctional Epoxy casting resin system ( ⁇ 80% by weight; e.g. bisphenol A diglycidyl ether), a reactive thinner ( ⁇ 10% by weight; e.g. aromatic Monoglycidyl ether), a polyfunctional alcohol ( ⁇ 5% by weight), a degassing agent based on silicone ( ⁇ 1% by weight) and a decolorization component to adjust the color number ( ⁇ 1 Wt%).
  • a mono- and / or a multifunctional Epoxy casting resin system ⁇ 80% by weight; e.g. bisphenol A diglycidyl ether
  • a reactive thinner ⁇ 10% by weight; e.g. aromatic Monoglycidyl ether
  • a polyfunctional alcohol ⁇ 5% by weight
  • a degassing agent based on silicone ⁇ 1% by weight
  • a decolorization component to adjust the color number ( ⁇ 1 Wt%).
  • the phosphor pigments are spherical or scaly.
  • the tendency for such pigments to form agglomerates is advantageously very low.
  • the H 2 O content is below 2%.
  • the phosphor pigments can advantageously be dispersed in the above-mentioned grain size essentially homogeneously and free of agglomerates in the epoxy casting resin. This dispersion is stable even when the casting compound is stored for a long time. There are essentially no wetting and / or sedimentation problems.
  • Particles of phosphorus are particularly preferred the group of Ce-doped garnets, in particular YAG: Ce particles used.
  • An advantageous dopant concentration is, for example, 1% and an advantageous phosphor concentration is, for example, 12%.
  • this points out highly pure phosphor pigment powder advantageously an iron content of ⁇ 5ppm. A high iron content leads excessive light loss in the component.
  • the phosphor pigment powder is very abrasive.
  • the Fe content of the casting compound can be their production therefore increase significantly.
  • Advantageous Fe contents in the casting compound are ⁇ 20ppm.
  • the inorganic phosphor YAG: Ce has, among other things, the special one Advantage that this is insoluble color pigments trades with a refractive index of approximately 1.84. Thereby occur in addition to the wavelength conversion dispersion and scattering effects on that to good mixing of blue diode radiation and yellow converter radiation.
  • the Fluorescent pigments advantageously with a silicone coating be provided.
  • an inventive Potting compound in a preferred method for producing an inventive Potting compound is the phosphor pigment powder before mixing with the epoxy resin z. B. at about 10 hours at a temperature ⁇ 200 ° C. This also allows the The tendency to agglomerate formation can be reduced.
  • the phosphor pigment powder can be used before mixing with the epoxy resin in a higher boiling alcohol slurried and then dried.
  • Another way to reduce agglomerate formation consists of the phosphor pigment powder before mixing add a hydrophobic silicone wax with the epoxy casting resin.
  • Surface stabilization is particularly advantageous the phosphors by heating the pigments in the presence of glycol ethers, z. B. 16 h at T> 60 ° C.
  • Fluorescent pigments To avoid disruptive impurities when dispersing the Fluorescent pigments, caused by abrasion, become reaction vessels, Stirring and dispersing devices as well as rolling mills Glass, corundum, carbide and nitride materials as well as specially hardened Steel grades used. Agglomerate-free phosphor dispersions are also done in ultrasound or by the Use of sieves and glass ceramic frits obtained.
  • a particularly preferred inorganic phosphor for the production of white luminous optoelectronic components is the phosphor YAG: Ce (Y 3 Al 5 O 12 : Ce 3+ ). This can be mixed in a particularly simple manner in transparent epoxy casting resins conventionally used in LED technology. Also conceivable as phosphors are other grenades doped with rare earths such as. B. Y 3 Ga 5 O 12 : Ce 3+ , Y (Al, Ga) 5 O 12 : Ce 3+ and Y (Al, Ga) 5 O 12 : Tb 3+ .
  • rare earth-doped thiogallates such as z.
  • rare earth-doped aluminates such as B. YAlO 3 : Ce 3+ , YGaO 3 : Ce 3+ , Y (Al, Ga) O 3 : Ce 3+ and rare earth-doped orthosilicates M 2 SiO 5 : Ce 3+ (M: Sc, Y, Sc ) such as B. Y 2 SiO 5 : Ce 3+ conceivable.
  • the yttrium can in principle also be replaced by scandium or lanthanum.
  • the potting compound according to the invention is preferably used in a radiation-emitting semiconductor body, in particular with an active semiconductor layer or layer sequence of Ga x In 1-x N or Ga x Al 1-x N, which emits electromagnetic radiation from the ultraviolet, blue and / or or green spectral range.
  • the phosphor particles in the potting compound convert part of the radiation originating from this spectral range into radiation with a longer wavelength, such that the semiconductor component emits mixed radiation, in particular mixed-colored light consisting of this radiation and radiation from the ultraviolet, blue and / or green spectral range , This means, for example, that the phosphor particles spectrally selectively absorb part of the radiation emitted by the semiconductor body and emit them in the longer-wave range.
  • the radiation emitted by the semiconductor body preferably has a relative intensity maximum at a wavelength ⁇ 520 520 nm, and the wavelength range spectrally selectively absorbed by the phosphor particles lies outside this intensity maximum.
  • Fluorescent particle types that are at different wavelengths emit, be dispersed in the potting compound. This will preferably by different doping in different Host lattice reached. This makes it advantageous possible, diverse color mixtures and color temperatures of the to generate light emitted by the component. Of special This is of interest for full-color compatible LEDs.
  • the potting compound according to the invention is a radiation-emitting semiconductor body (e.g. an LED chip) at least partially enclosed by this.
  • the Potting compound is preferably at the same time as a component covering (Housing) used.
  • Housing a component covering
  • the advantage of a semiconductor device according to this embodiment essentially consists in that conventional for its manufacture, for the manufacture of conventional light emitting diodes (e.g. radial light emitting diodes) are used Production lines can be used. For component wrapping is instead of the conventional LEDs the transparent plastic used simply the potting compound used.
  • the potting compound according to the invention can be used in a simple manner with a single colored light source, especially one Light-emitting diode with a single semiconductor body that emits blue light, mixed-colored, especially white light become.
  • a single colored light source especially one Light-emitting diode with a single semiconductor body that emits blue light, mixed-colored, especially white light become.
  • a blue light emitting semiconductor body Generating white light becomes part of that Semiconductor body emitted radiation using inorganic Fluorescent particles from the blue spectral range to Blue complementary yellow spectral range converted.
  • the color temperature or color location of the white light can through a suitable choice of the phosphor, its particle size and its concentration.
  • you can fluorescent mixtures are also used, which makes advantageously the desired hue of the emitted Light can be set very precisely.
  • the potting compound is particularly preferably used in a radiation-emitting semiconductor body in which the radiation spectrum emitted is at a wavelength between 420 nm and 460 nm, in particular at 430 nm (for example semiconductor bodies based on Ga x Al 1-x N) or 450 nm (e.g. semiconductor body based on Ga x In 1-x N) has an intensity maximum.
  • a radiation-emitting semiconductor body made of electroluminescent semiconductor material
  • another electroluminescent material such as polymer material, can also be used.
  • the potting compound is particularly suitable for a light-emitting one Semiconductor component (z. B. a light emitting diode), in which the electroluminescent semiconductor body in a recess of a prefabricated possibly already provided with a lead frame Housing is arranged and the recess with the sealing compound is provided.
  • a semiconductor device leaves in large numbers in conventional production lines produce. To do this, only after mounting the semiconductor body the potting compound is filled into the recess in the housing become.
  • a semiconductor device that emits white light can be with the potting compound according to the invention advantageously thereby produce that the phosphor is chosen so that a blue radiation emitted by the semiconductor body into complementary ones Wavelength ranges, in particular blue and yellow, or to additive color triples, e.g. B. converted to blue, green and red becomes.
  • the yellow or the green and red light is over which produces phosphors.
  • the color tone (color location in the CIE color chart) of the white light generated in this way can suitable choice of the phosphor (s) with regard to the mixture and concentration can be varied.
  • the potting compound according to the invention additionally added a luminescent dye in the blue, which is a so-called directional characteristic of that of the semiconductor body emitted radiation attenuates. Under polar pattern it should be understood that that emitted by the semiconductor body Radiation has a preferred radiation direction.
  • a white light-emitting semiconductor component according to the invention with a blue light-emitting electroluminescent semiconductor body can be particularly preferably realized by admixing the inorganic phosphor YAG: Ce (Y 3 Al 5 O 12 : Ce 3+ ) with the epoxy resin used for the sealing compound. Part of a blue radiation emitted by the semiconductor body is shifted by the inorganic phosphor Y 3 Al 5 O 12 : Ce 3+ into the yellow spectral range and thus into a wavelength range complementary to the color blue.
  • the color tone (color location in the CIE color chart) of the white light can be varied by a suitable choice of the dye concentration.
  • the potting compound can also contain light-scattering particles, so-called Diffusers may be added. This advantageously allows the color impression and the radiation characteristics further optimize the semiconductor device.
  • the potting compound according to the invention can advantageously also one of an electroluminescent semiconductor body ultraviolet radiation emitted in addition to the visible radiation be converted into visible light. This will make the Brightness of the light emitted by the semiconductor body clearly elevated.
  • a particular advantage of white light emitting according to the invention Semiconductor components in which as a luminescence conversion dye in particular YAG: Ce is used in that this fluorescent one when excited with blue light spectral shift of approximately 100 nm between absorption and causes emission. This leads to a substantial reduction the reabsorption of the light emitted by the phosphor and thus to a higher light output.
  • YAG also owns: Ce advantageously high thermal and photochemical (e.g. B. UV) stability (much higher than organic phosphors), so that white diodes for outdoor use and / or high temperature ranges can be produced.
  • YAG Ce has so far changed in terms of reabsorption, luminous efficacy, thermal and photochemical stability and processability turned out to be the most suitable phosphor.
  • Ce-doped Phosphors, especially Ce-doped garnet types.
  • the wavelength conversion of the primary radiation is determined by the crystal field splitting of the active transition metal centers in the host lattice.
  • the substitution of Y by Gd and / or Lu or Al by Ga in the Y 3 Al 5 O 12 grenade grating means that the emission wavelengths can be shifted in different ways, as can also by the type of doping. Corresponding shifts can be generated by substituting Ce 3+ centers with Eu 3+ and / or Cr 3+ . Appropriate doping with Nd 3+ and Er 3+ enables IRemitting components even because of the larger ionic radii and thus lower crystal field splits.
  • the light-emitting semiconductor component of Figure 1 is the semiconductor body 1 by means of an electrically conductive connecting means, z. B. a metallic solder or an adhesive, with its rear contact 11 on a first electrical Port 2 attached.
  • the front contact 12 is by means of a bonding wire 14 with a second electrical connection 3 connected.
  • the free surfaces of the semiconductor body 1 and partial areas the electrical connections 2 and 3 are directly from one hardened, wavelength-converting potting compound 5 enclosed.
  • This preferably has: epoxy casting resin 80-90% by weight, Fluorescent pigments (YAG: Ce) ⁇ 15% by weight, diethylene glycol monomethyl ether ⁇ 2% by weight, Tegoprene 6875-45 ⁇ 2% by weight, Aerosil 200 ⁇ 5 wt%
  • FIG. 2 of an inventive Semiconductor device differs from that of Figure 1 in that the semiconductor body 1 and portions of electrical connections 2 and 3 instead of a wavelength converting one Potting compound from a transparent Envelope 15 are enclosed.
  • This transparent envelope 15 causes no change in the wavelength of the semiconductor body 1 emitted radiation and consists for example of one Epoxy, silicone, commonly used in LED technology or acrylic resin or any other suitable radiation-permeable material such.
  • a layer 4 is applied to this transparent covering 15, made of a wavelength-converting casting compound, as shown in Figure 2, the entire surface of the envelope 15 covered. It is also conceivable that the layer 4 only covered a portion of this surface.
  • Layer 4 exists for example from a transparent epoxy resin, the is mixed with phosphor particles 6. Also suitable here as a phosphor for a white glowing semiconductor component preferably YAG: Ce.
  • "Prefabricated” means that the basic housing 8 already at the connections 2, 3, for example is finished by injection molding before the semiconductor body is mounted on connection 2.
  • the basic housing 8 consists for example of an opaque plastic and the recess 9 is in terms of its shape as a reflector 17 for those emitted by the semiconductor body during operation Radiation (if necessary by suitable coating of the inside walls of the Recess 9) formed.
  • Such basic housing 8 in particular for light-emitting diodes that can be surface-mounted on printed circuit boards used. You will be assembling the semiconductor body on a conductor strip having the electrical connections 2, 3 (Leadframe) e.g. B. applied by injection molding.
  • the recess 9 is with a potting compound 5, the composition the above in connection with the description of FIG. 1 specified specified, filled.
  • FIG. in this connection is the electroluminescent semiconductor body 1 in a as Reflector-formed part 16 of the first electrical connection 2 attached for example by soldering or gluing.
  • Such housing designs are known in light-emitting diode technology and therefore require no further explanation.
  • the free surfaces of the semiconductor body 1 are immediate covered with a potting compound 5 with phosphor particles 6, the again surrounded by a further transparent covering 10 is.
  • FIG. 5 there is a layer 4 (possible materials as stated above) directly on the semiconductor body 1 applied.
  • This and parts of the electrical Connections 2,3 are of another transparent Envelope 10 enclosed, which does not change the wavelength caused through the layer 4 radiation and for example from a usable in light emitting diode technology transparent epoxy resin or made of glass.
  • the potting compound 5, possibly the transparent covering 15, and / or the further transparent covering 10 can advantageously have light-scattering particles, advantageously so-called diffusers.
  • diffusers are mineral fillers, in particular CaF 2 , TiO 2 , SiO 2 , CaCO 3 or BaSO 4 or organic pigments. These materials can easily be added to epoxy resins.
  • FIGS. 6, 7 and 8 show emission spectra of a blue one Light-emitting semiconductor body (Fig. 6) (Luminescence maximum at ⁇ ⁇ 430 nm) or by means of such Semiconductor body manufactured white luminous semiconductor components (Figs. 7 and 8) shown. Is on the abscissa is the wavelength ⁇ in nm and on the ordinate, respectively a relative electroluminescence (EL) intensity is plotted.
  • Fig. 6 Luminescence maximum at ⁇ ⁇ 430 nm
  • Figs. 7 and 8 shows emission spectra of a blue one Light-emitting semiconductor body (Fig. 6) (Luminescence maximum at ⁇ ⁇ 430 nm) or by means of such Semiconductor body manufactured white luminous semiconductor components (Figs. 7 and 8) shown. Is on the abscissa is the wavelength ⁇ in nm and on the ordinate, respectively a relative electroluminescence (EL) intensity is plotted.
  • EL electroluminescence
  • the Dashed line 30 in Figure 7 represents an emission spectrum of a semiconductor device that emits radiation from two complementary Wavelength ranges (blue and yellow) and thus emits a total of white light.
  • the emission spectrum shows here at wavelengths between approx. 400 and approx. 430 nm (blue) and a maximum between about 550 and about 580 nm (yellow).
  • the solid line 31 represents the emission spectrum of a semiconductor device that has the color white from three wavelength ranges (Additive color triplet of blue, green and Red) mixes.
  • the emission spectrum shows here, for example at the wavelengths of approx. 430 nm (blue), approx. 500 nm (green) and about 615 nm (red) each a maximum.
  • FIG. 8 shows an emission spectrum of a white light
  • Semiconductor component with an emission spectrum according to 6 emitting semiconductor body is provided and at which is used as the phosphor YAG: Ce. From that of the semiconductor body only a part of the radiation emitted according to FIG. 6 converted to a longer wavelength range, so that white light is created as a mixed color.
  • the different dashed lines Lines 30 to 33 of Figure 8 represent emission spectra of semiconductor components according to the invention, in which the epoxy resin of the potting compound 5 different YAG: Ce concentrations having.
  • FIG. 8 illustrates that in the inventive Semiconductor device in a simple manner by changing the Fluorescent concentration in the epoxy resin is the CIE color locus of the white Light can be changed.

Abstract

The present invention pertains to a sealing material (5) with wavelength converting effect, obtained by mixing epoxy cast resin with a luminescent substance and intended for use in an electroluminescent building component comprising a body (1) emitting an ultraviolet light, blue or green, and spraying in the epoxy cast resin a powder of inorganic luminescent pigments (6) from the phosphor group of general formula A3B5X12:M, with a grain size ≤10 νm and a grain diameter d50 ≤5 νm.

Description

Die Erfindung betrifft eine wellenlängenkonvertierende Vergußmasse auf der Basis eines transparenten Epoxidgießharzes, insbesondere für die Verwendung bei einem elektrolumineszierenden Bauelement mit einem ultraviolettes, blaues und/oder grünes Licht aussendenden Körper, und ein Verfahren zu deren Herstellung. Sie betrifft weiterhin ein Verfahren zum Herstellen eines lichtabstrahlenden Halbleiterbauelements und ein lichtabstrahlendes Halbleiterbauelement.The invention relates to a wavelength-converting casting compound based on a transparent epoxy casting resin, in particular for use with an electroluminescent Component with an ultraviolet, blue and / or green Light-emitting bodies, and a method for their production. It also relates to a method for producing one light-emitting semiconductor component and a light-emitting Semiconductor device.

In der früher eingereichten, aber nach dem Anmeldetag dieser Anmeldung veröffentlichten internationalen Anmeldung WO-A-98/05078 (EP-A-0 936 682) mit Bestimmung EP, die Stand der Technik gemäß Artikel 54(3) und (4) EPÜ darstellt, ist ein Leuchtdiodenbauelement beschrieben, bei dem ein Leuchtdiodenchip mit einem Emissionsspektrum im ultravioletten, blauen und grünen Spektralbereich in einer transparenten Vergußmasse eingebettet ist, die anorganische Leuchtstoffpigmente auf der Basis von Cer-dotiertem Yttrium-Aluminium-Granat (Y3Al5O12:Ce) enthält.In the international application WO-A-98/05078 (EP-A-0 936 682), which was filed earlier but was published after the filing date of this application, with provision EP, which represents state of the art according to Article 54 (3) and (4) EPC describes a light-emitting diode component in which a light-emitting diode chip with an emission spectrum in the ultraviolet, blue and green spectral range is embedded in a transparent casting compound, the inorganic phosphor pigments based on cerium-doped yttrium aluminum garnet (Y 3 Al 5 O 12 : Ce) contains.

Aus der Offenlegungsschrift DE 38 04 293 ist eine Anordnung mit einer Elektrolumineszenz- oder Laserdiode bekannt, bei der das von der Diode abgestrahlte Emissionsspektrum mittels eines mit einem fluoreszierenden, lichtwandelnden organischen Farbstoff versetzten Elements aus Kunststoff zu größeren Wellenlängen hin verschoben wird. Das von der Anordnung abgestrahlte Licht weist dadurch eine andere Farbe auf als das von der Leuchtdiode ausgesandte. Abhängig von der Art des dem Kunststoff beigefügten Farbstoffes lassen sich mit ein und demselben Leuchtdiodentyp Leuchtdiodenanordnungen herstellen, die in unterschiedlichen Farben leuchten.From the published patent application DE 38 04 293 an arrangement with an electroluminescent or laser diode known in which the emission spectrum emitted by the diode by means of a a fluorescent, light-converting organic dye offset elements made of plastic towards longer wavelengths is moved. The light emitted by the arrangement points thereby a different color than that emitted by the light emitting diode. Depending on the type of plastic added Dye can be used with one and the same type of LED Manufacture light emitting diode arrangements in different Colors glow.

In vielen potentiellen Anwendungsgebieten für Leuchtdioden, wie zum Beispiel bei Anzeigeelementen im Kfz-Armaturenbereich, Beleuchtung in Flugzeugen und Autos und bei vollfarbtauglichen LED-Displays, tritt verstärkt die Forderung nach Leuchtdiodenanordnungen auf, mit denen sich mischfarbiges Licht, insbesondere weißes Licht erzeugen läßt.In many potential fields of application for light emitting diodes, such as for example for display elements in the automotive fittings area, lighting in airplanes and cars and in full color suitability LED displays, the demand for LED arrays is increasing with which mixed-colored light, in particular can produce white light.

Die bislang bekannten Vergußmassen der eingangs genannten Art mit organischen Leuchtstoffen zeigen bei Temperatur- und Temperatur-Feuchtebeanspruchung jedoch eine Verschiebung des Farbortes, also der Farbe des vom elektrolumineszierenden Bauelement abgestrahlten Lichtes.The previously known casting compounds of the type mentioned with organic phosphors show when exposed to temperature and temperature-humidity however a shift in the color locus, the color of the electroluminescent component radiated light.

In JP-07 176 794-A ist eine weißes Licht aussendende planare Lichtquelle beschrieben, bei der an einer Stirnseite einer transparenten Platte zwei blaues Licht emittierende Dioden angeordnet sind, die Licht in die transparente Platte hinein aussenden. Die transparente Platte ist auf einer der beiden einan-. der gegenüberliegenden Hauptflächen mit einer fluoreszierenden Substanz beschichtet, die Licht emittiert, wenn sie mit dem blauen Licht der Dioden angeregt wird. Das von der fluoreszierenden Substanz emittierte Licht hat eine andere Wellenlänge als das von den Dioden emittierte blaue Licht. Bei diesem bekannten Bauelement ist es besonders schwierig, die fluoreszierende Substanz in einer Art und Weise aufzubringen, daß die Lichtquelle homogenes weißes Licht abstrahlt. Darüber hinaus bereitet auch die Reproduzierbarkeit in der Massenfertigung große Probleme, weil schon geringe Schichtdickenschwankungen der fluoreszierenden Schicht, z. B. aufgrund von Unebenheiten der Oberfläche der transparenten Platte, eine Änderung des Weißtones des abgestrahlten Lichtes hervorruft. In JP-07 176 794-A there is a planar emitting white light Light source described in which a Transparent plate two blue light emitting diodes arranged that emit light into the transparent plate. The transparent plate is on one of the two. the opposite main surfaces with a fluorescent Coated substance that emits light when used with the blue light of the diodes is excited. That of the fluorescent Substance emitted light has a different wavelength than the blue light emitted by the diodes. In this well-known It is particularly difficult to make the fluorescent component To apply substance in a way that the Light source emits homogeneous white light. Furthermore also prepares for reproducibility in mass production big problems, because even slight layer thickness fluctuations the fluorescent layer, e.g. B. due to bumps the surface of the transparent plate, a change of White tone of the emitted light.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, eine Vergußmasse der eingangs genannten Art zu entwickeln, mit der elektrolumineszierende Bauelemente hergestellt werden können, die homogenes mischfarbiges Licht abstrahlen und die eine Massenfertigung mit vertretbarem technischen Aufwand und mit weitestgehend reproduzierbarer Bauelementcharakteristik ermöglicht. Das abgestrahlte Licht soll auch bei Temperatur- und Temperatur-Feuchtebeanspruchung farbstabil sein. Desweiteren soll ein Verfahren zum Herstellen dieser Vergußmasse angegeben werden.The present invention has for its object a Develop potting compound of the type mentioned, with the electroluminescent components can be produced, which emit homogeneous mixed-colored light and which are mass-produced with reasonable technical effort and with as much as possible reproducible component characteristic enables. The emitted light should also at temperature and Temperature-moisture exposure to be color-stable. Furthermore is to specify a method for producing this potting compound become.

Diese Aufgabe wird durch eine Vergußmasse mit den Merkmalen des Anspruches 1 beziehungsweise mit einem Verfahren mit den Merkmalen des Patentanspruches 9 gelöst. Ein Verfahren zum Herstellen eines lichtabstrahlenden Halbleiterbauelements und ein lichtabstrahlendes Halbleiterbauelement ist Gegenstand des Patentanspruches 20 bzw. 21.This task is performed by a potting compound with the characteristics of Claim 1 or with a method with the features of claim 9 solved. A manufacturing process a light-emitting semiconductor component and a light-emitting semiconductor component is the subject of the claim 20 or 21.

Vorteilhafte Weiterbildungen der Vergußmasse, des Verfahrens zum Herstellen der Vergußmasse und des lichtabstrahlenden Bauelements sind Gegenstand der Unteransprüche 2 bis 8, 10 bis 19 bzw. 22 bis 25.Advantageous further developments of the casting compound, the process for producing the sealing compound and the light-emitting component are the subject of dependent claims 2 to 8, 10 to 19 or 22 to 25.

Erfindungsgemäß ist vorgesehen, daß im transparenten Epoxidgießharz ein anorganisch-mineralisches Leuchtstoffpigmentpulver auf der Basis eines Granatwirtsgitters mit der allgemeinen Formel A3B5X12:M dispergiert sind und daß die Leuchtstoffpigmente Korngrößen ≤ 20 µm und einen mittleren Korndurchmesser d50 ≤ 5 µm aufweisen. Besonders bevorzugt liegt der mittlere Korndurchmesser d50 zwischen 1 und 2 µm. Bei diesen Korngrößen können günstige Fertigungsausbeuten erhalten werden.It is provided according to the invention that an inorganic-mineral phosphor pigment powder based on a garnet host lattice with the general formula A 3 B 5 X 12 : M is dispersed in the transparent epoxy casting resin and that the phosphor pigments have grain sizes 20 20 μm and an average grain diameter d 50 5 5 μm , The average grain diameter d 50 is particularly preferably between 1 and 2 μm. Favorable manufacturing yields can be obtained with these grain sizes.

Anorganisch-mineralische Leuchtstoffe sind vorteilhafterweise äußerst temperatur- und temperatur-feuchtestabil. Inorganic-mineral phosphors are advantageous extremely temperature and temperature stable.

Bei einer besonders bevorzugten Weiterbildung der erfindungsgemäßen Vergußmasse setzt sich diese zusammen aus:

  • a) Epoxidgießharz ≥ 60 Gew%
  • b) Leuchtstoffpigmente ≤ 25 Gew%
  • c) Thixotropiermittel ≤ 10 Gew%
  • d) mineralischem Diffusor ≤ 10 Gew%
  • e) Verarbeitungshilfsmittel ≤ 3 Gew%
  • f) Hydrophobiermittel ≤ 3 Gew%
  • g) Haftvermittler ≤ 2 Gew%.
    • In a particularly preferred development of the potting compound according to the invention, it is composed of:
  • a) Epoxy cast resin ≥ 60% by weight
  • b) phosphor pigments ≤ 25% by weight
  • c) Thixotropic agent ≤ 10% by weight
  • d) mineral diffuser ≤ 10% by weight
  • e) processing aids ≤ 3% by weight
  • f) water repellant ≤ 3% by weight
  • g) adhesion promoter ≤ 2% by weight.

    • Geeignete Epoxidgießharze sind beispielsweise in der DE-OS 26 42 465 auf den Seiten 4 bis 9, insbesondere Beispiele 1 bis 4, und in der EP 0 039 017 auf den Seiten 2 bis 5, insbesondere Beispiele 1 bis 8, beschrieben.Suitable epoxy casting resins are, for example, in DE-OS 26 42 465 on pages 4 to 9, especially examples 1 to 4, and in EP 0 039 017 on pages 2 to 5, in particular Examples 1 to 8 described.

    Als Thixotropiermittel ist beispielsweise pyrogene Kieselsäure verwendet. Das Thixotropiermittel dient zur Eindickung des Epoxidgießharzes, um die Sedimentation des Leuchtpigmentpulvers zu vermindern. Für die Gießharzverarbeitung werden weiter die Fließ- und Benetzungseigenschaften eingestellt.Fumed silica, for example, is a thixotropic agent used. The thixotropic agent serves to thicken the Epoxy casting resin to the sedimentation of the luminous pigment powder to diminish. For cast resin processing, the Flow and wetting properties set.

    Als mineralischer Diffusor zur Optimierung des Leuchtbildes des Bauelements ist bevorzugt CaF2 verwendet.CaF 2 is preferably used as the mineral diffuser to optimize the luminous image of the component.

    Als verarbeitungshilfsmittel eignet sich beispielsweise Glykolether. Es verbessert die Verträglichkeit zwischen Epoxidgießharz und Leuchtpigmentpulver und dient damit zur Stabilisierung der Dispersion Leuchtpigmentpulver - Epoxidgießharz. Zu diesem Zweck können auch Oberflächenmodifikatoren auf Silikonbasis eingesetzt werden.Glycol ether, for example, is suitable as a processing aid. It improves the compatibility between epoxy resin and luminous pigment powder and thus serves for stabilization the dispersion luminous pigment powder - epoxy casting resin. To this Surface modifiers based on silicone can also be used be used.

    Das Hydrophobiermittel, z. B. flüssiges Silikonwachs, dient ebenfalls zur Modifikation der Pigmentoberfläche, insbesondere wird die Verträglichkeit und Benetzbarkeit der anorganischen Pigmentoberfläche mit dem organischen Harz verbessert.The hydrophobizing agent, e.g. B. liquid silicone wax also for modification of the pigment surface, in particular will the compatibility and wettability of the inorganic Improved pigment surface with the organic resin.

    Der Haftvermittler, z. B. funktionelles Alkoxysiloxan, verbessert die Haftung zwischen den Pigmenten und dem Epoxidharz im ausgehärteten Zustand der Vergußmasse. Dadurch wird erreicht, daß die Grenzfläche zwischen dem Epoxidharz und den Pigmenten z. B. bei Temperaturschwankungen nicht abreißt. Spalte zwischen dem Epoxidharz und den Pigmenten würden zu Lichtverlusten im Bauelement führen.The adhesion promoter, e.g. B. functional alkoxysiloxane, improved the adhesion between the pigments and the epoxy resin in the hardened condition of the sealing compound. This ensures that the interface between the epoxy resin and the pigments z. B. does not tear off with temperature fluctuations. Column between the epoxy resin and the pigments would lead to light losses in the Guide component.

    Das Epoxidgießharz, bevorzugt mit einem reaktiven Oxirandreiring, enthält vorzugsweise ein mono- und/oder ein mehrfunktionelles Epoxidgießharzsystem (≥ 80 Gew%; z. B. Bisphenol-A-Diglycidylether), einen Reaktivverdünner (≤ 10 Gew%; z. B. aromatischer Monoglycidylether), einen mehrfunktionellen Alkohol (≤ 5 Gew%), ein Entgasungsagens auf Silikonbasis (≤ 1 Gew%) und eine Entfärbungskomponente zur Einstellung der Farbzahl (≤ 1 Gew%). The epoxy casting resin, preferably with a reactive oxirane triple ring, preferably contains a mono- and / or a multifunctional Epoxy casting resin system (≥ 80% by weight; e.g. bisphenol A diglycidyl ether), a reactive thinner (≤ 10% by weight; e.g. aromatic Monoglycidyl ether), a polyfunctional alcohol (≤ 5% by weight), a degassing agent based on silicone (≤ 1% by weight) and a decolorization component to adjust the color number (≤ 1 Wt%).

    Bei einer besonders bevorzugten Weiterbildung des Vergusses sind die Leuchtstoffpigmente kugelförmig oder schuppenförmig. Die Neigung zur Agglomeratbildung derartiger Pigmente ist vorteilhafterweise sehr gering. Der H2O-Gehalt liegt unter 2%.In a particularly preferred further development of the encapsulation, the phosphor pigments are spherical or scaly. The tendency for such pigments to form agglomerates is advantageously very low. The H 2 O content is below 2%.

    Bei der Herstellung und Verarbeitung von Epoxidgießharzkomponenten mit anorganischen Leuchtstoffpigmentpulvern treten im allgemeinen neben Benetzungs- auch Sedimentationsprobleme auf. Besonders Leuchtstoffpigmentpulver mit d50 ≤ 5µm neigen stark zur Agglomeratbildung. Bei der zuletzt genannten Zusammensetzung der Vergußmasse können die Leuchtstoffpigmente vorteilhafterweise in der oben angegebenen Korngröße im Wesentlichen agglomeratfrei und homogen in das Epoxidgießharz dispergiert werden. Diese Dispersion ist auch bei längerer Lagerung der Vergußmasse stabil. Es treten im Wesentlichen keine Benetzungs- und/oder Sedimentationsprobleme auf.In the production and processing of epoxy cast resin components with inorganic phosphor pigment powders, in addition to wetting and sedimentation problems generally arise. Fluorescent pigment powders with d 50 ≤ 5 µm are particularly prone to agglomerate formation. With the last-mentioned composition of the casting compound, the phosphor pigments can advantageously be dispersed in the above-mentioned grain size essentially homogeneously and free of agglomerates in the epoxy casting resin. This dispersion is stable even when the casting compound is stored for a long time. There are essentially no wetting and / or sedimentation problems.

    Besonders bevorzugt sind als Leuchtstoffpigmente Partikel aus der Gruppe der Ce-dotierten Granate, insbesondere YAG:Ce-Partikel verwendet. Eine vorteilhafte Dotierstoffkonzentration ist beispielsweise 1% und eine vorteilhafte Leuchtstoffkonzentration beträgt beispielsweise 12%. Desweiteren weist das bevorzugt hochreine Leuchtstoffpigmentpulver vorteilhafterweise einen Eisengehalt von ≤ 5ppm auf. Ein hoher Eisengehalt führt zu hohen Lichtverlusten im Bauelement. Das Leuchtstoffpigmentpulver ist stark abrasiv. Der Fe-Gehalt der Vergußmasse kann bei deren Herstellung daher beträchtlich ansteigen. Vorteilhaft sind Fe-Gehalte in der Vergußmasse < 20ppm.Particles of phosphorus are particularly preferred the group of Ce-doped garnets, in particular YAG: Ce particles used. An advantageous dopant concentration is, for example, 1% and an advantageous phosphor concentration is, for example, 12%. Furthermore, this points out highly pure phosphor pigment powder advantageously an iron content of ≤ 5ppm. A high iron content leads excessive light loss in the component. The phosphor pigment powder is very abrasive. The Fe content of the casting compound can be their production therefore increase significantly. Advantageous Fe contents in the casting compound are <20ppm.

    Der anorganische Leuchtstoff YAG:Ce hat unter anderem den besonderen Vorteil, daß es sich hierbei um nicht lösliche Farbpigmente mit einem Brechungsindex von ca. 1,84 handelt. Dadurch treten neben der Wellenlängenkonversion Dispersion und Streueffekte auf, die zu einer guten Vermischung von blauer Diodenstrahlung und gelber Konverterstrahlung führen. The inorganic phosphor YAG: Ce has, among other things, the special one Advantage that this is insoluble color pigments trades with a refractive index of approximately 1.84. Thereby occur in addition to the wavelength conversion dispersion and scattering effects on that to good mixing of blue diode radiation and yellow converter radiation.

    Besonders vorteilhaft ist weiterhin, dass die Leuchtstoffkonzentration im Epoxidharz bei Verwendung von anorganischen Leuchtstoffpigmenten nicht, wie bei organischen Farbstoffen, durch die Löslichkeit begrenzt wird.It is also particularly advantageous that the phosphor concentration in epoxy resin when using inorganic Phosphor pigments not like organic dyes, is limited by solubility.

    Zur weiteren Verminderung der Agglomeratbildung können die Leuchtstoffpigmente vorteilhafterweise mit einem Silikon-Coating versehen sein.To further reduce agglomerate formation, the Fluorescent pigments advantageously with a silicone coating be provided.

    Bei einem bevorzugten Verfahren zum Herstellen einer erfindungsgemäßen Vergußmasse wird das Leuchtstoffpigmentpulver vor dem Vermischen mit dem Epoxidgießharz z. B. ca. 10 Stunden bei einer Temperatur ≥ 200°C getempert. Dadurch kann ebenfalls die Neigung zu Agglomeratbildung verringert werden.In a preferred method for producing an inventive Potting compound is the phosphor pigment powder before mixing with the epoxy resin z. B. at about 10 hours at a temperature ≥ 200 ° C. This also allows the The tendency to agglomerate formation can be reduced.

    Alternativ oder zusätzlich kann dazu das Leuchtstoffpigmentpulver vor dem Vermischen mit dem Epoxidgießharz in einem höher siedenden Alkohol geschlämmt und anschließend getrocknet werden. Eine weitere Möglichkeit, die Agglomeratbildung zu verringern, besteht darin, dem Leuchtstoffpigmentpulver vor dem Vermischen mit dem Epoxidgießharz ein hydrophobierendes Silikonwachs zuzugeben. Besonders vorteilhaft ist die Oberflächenstabilisierung der Phosphore durch Erwärmen der Pigmente in Gegenwart von Glykolethern, z. B. 16 h bei T > 60°C.Alternatively or additionally, the phosphor pigment powder can be used before mixing with the epoxy resin in a higher boiling alcohol slurried and then dried. Another way to reduce agglomerate formation consists of the phosphor pigment powder before mixing add a hydrophobic silicone wax with the epoxy casting resin. Surface stabilization is particularly advantageous the phosphors by heating the pigments in the presence of glycol ethers, z. B. 16 h at T> 60 ° C.

    Zur Vermeidung störender Verunreinigungen beim Dispergieren der Leuchstoffpigmente, verursacht durch Abrieb, werden Reaktionsgefäße, Rühr- und Dispergiervorrichtungen sowie Walzwerke aus Glas, Korund, Carbid- und Nitridwerkstoffen sowie speziell gehärtete Stahlsorten verwendet. Agglomeratfreie Leuchtstoffdispersionen werden auch in Ultraschallverfahren oder durch den Einsatz von Sieben und Glaskeramikfritten erhalten. To avoid disruptive impurities when dispersing the Fluorescent pigments, caused by abrasion, become reaction vessels, Stirring and dispersing devices as well as rolling mills Glass, corundum, carbide and nitride materials as well as specially hardened Steel grades used. Agglomerate-free phosphor dispersions are also done in ultrasound or by the Use of sieves and glass ceramic frits obtained.

    Ein besonders bevorzugter anorganischer Leuchtstoff zur Herstellung von weiß leuchtenden optoelektronischen Bauelementen ist der Phosphor YAG:Ce (Y3Al5O12:Ce3+). Dieser läßt sich auf besonders einfache Weise in herkömmlich in der LED-Technik verwendeten transparenten Epoxidgießharzen mischen. Weiterhin als Leuchtstoffe denkbar sind weitere mit Seltenen Erden dotierte Granate wie z. B. Y3Ga5O12:Ce3+, Y(Al,Ga)5O12:Ce3+ und Y(Al,Ga)5O12:Tb3+.A particularly preferred inorganic phosphor for the production of white luminous optoelectronic components is the phosphor YAG: Ce (Y 3 Al 5 O 12 : Ce 3+ ). This can be mixed in a particularly simple manner in transparent epoxy casting resins conventionally used in LED technology. Also conceivable as phosphors are other grenades doped with rare earths such as. B. Y 3 Ga 5 O 12 : Ce 3+ , Y (Al, Ga) 5 O 12 : Ce 3+ and Y (Al, Ga) 5 O 12 : Tb 3+ .

    Zur Erzeugung von mischfarbigem Licht eignen sich darüberhinaus besonders die mit Seltenen Erden dotierten Thiogallate wie z. B. CaGa2S4:Ce3+ und SrGa2S4:Ce3+. Ebenso ist hierzu die Verwendung von mit Seltenen Erden dotierten Aluminaten wie z. B. YAℓO3:Ce3+, YGaO3:Ce3+, Y(Al,Ga)O3:Ce3+ und mit Seltenen Erden dotierten Orthosilikaten M2SiO5:Ce3+ (M: Sc, Y, Sc) wie z. B. Y2SiO5:Ce3+ denkbar. Bei allen Yttriumverbindungen kann das Yttrium im Prinzip auch durch Scandium oder Lanthan ersetzt werden.In addition, the rare earth-doped thiogallates such as z. B. CaGa 2 S 4 : Ce 3+ and SrGa 2 S 4 : Ce 3+ . Likewise, the use of rare earth-doped aluminates such. B. YAℓO 3 : Ce 3+ , YGaO 3 : Ce 3+ , Y (Al, Ga) O 3 : Ce 3+ and rare earth-doped orthosilicates M 2 SiO 5 : Ce 3+ (M: Sc, Y, Sc ) such as B. Y 2 SiO 5 : Ce 3+ conceivable. For all yttrium compounds, the yttrium can in principle also be replaced by scandium or lanthanum.

    Bevorzugt wird die erfindungsgemäße Vergußmasse bei einem strahlungsemittierenden Halbleiterkörper, insbesondere mit einer aktiven Halbleiterschicht oder -schichtenfolge aus GaxIn1-xN oder GaxAl1-xN, eingesetzt, der im Betrieb eine elektromagnetische Strahlung aus dem ultravioletten, blauen und/oder grünen Spektralbereich aussendet. Die Leuchtstoffpartikel in der Vergußmasse wandeln einen Teil der aus diesem Spektralbereich stammenden Strahlung in Strahlung mit größerer Wellenlänge um, derart, daß das Halbleiterbauelement Mischstrahlung, insbesondere mischfarbiges Licht, bestehend aus dieser Strahlung und aus Strahlung aus dem ultravioletten, blauen und/oder grünen Spektralbereich aussendet. Das heißt beispielsweise, daß die Leuchtstoffpartikel einen Teil der vom Halbleiterkörper ausgesandten Strahlung spektral selektiv absorbiert und im längerwelligen Bereich emittiert. Bevorzugt weist die von dem Halbleiterkörper ausgesandte Strahlung bei einer Wellenlänge λ ≤ 520 nm ein relatives Intensitätsmaximum auf und liegt der von den Leuchtstoffpartikeln spektral selektiv absorbierte Wellenlängenbereich außerhalb dieses Intensitätsmaximums.The potting compound according to the invention is preferably used in a radiation-emitting semiconductor body, in particular with an active semiconductor layer or layer sequence of Ga x In 1-x N or Ga x Al 1-x N, which emits electromagnetic radiation from the ultraviolet, blue and / or or green spectral range. The phosphor particles in the potting compound convert part of the radiation originating from this spectral range into radiation with a longer wavelength, such that the semiconductor component emits mixed radiation, in particular mixed-colored light consisting of this radiation and radiation from the ultraviolet, blue and / or green spectral range , This means, for example, that the phosphor particles spectrally selectively absorb part of the radiation emitted by the semiconductor body and emit them in the longer-wave range. The radiation emitted by the semiconductor body preferably has a relative intensity maximum at a wavelength λ 520 520 nm, and the wavelength range spectrally selectively absorbed by the phosphor particles lies outside this intensity maximum.

    Ebenso können vorteilhafterweise auch mehrere verschiedenartige Leuchtstoffpartikelarten, die bei unterschiedlichen Wellenlängen emittieren, in der Vergußmasse dispergiert sein. Dies wird bevorzugt duruch unterschiedliche Dotierungen in unterschiedlichen Wirtsgittern erreicht. Dadurch ist es vorteilhafterweise möglich, vielfältige Farbmischungen und Farbtemperaturen des vom Bauelement emittierten Lichtes zu erzeugen. Von besonderem Interesse ist dies für vollfarbtaugliche LEDs.Likewise, several different types can advantageously also be used Fluorescent particle types that are at different wavelengths emit, be dispersed in the potting compound. this will preferably by different doping in different Host lattice reached. This makes it advantageous possible, diverse color mixtures and color temperatures of the to generate light emitted by the component. Of special This is of interest for full-color compatible LEDs.

    Bei einer bevorzugten Verwendung der erfindungsgemäßen Vergußmasse ist ein strahlungsemittierender Halbleiterkörper (z. B. ein LED-Chip) zumindest teilweise von dieser umschlossen. Die Vergußmasse ist dabei bevorzugt gleichzeitig als Bauteilumhüllung (Gehäuse) genutzt. Der Vorteil eines Halbleiterbauelements gemäß dieser Ausführungsform besteht im wesentlichen darin, daß zu seiner Herstellung konventionelle, für die Herstellung von herkömmlichen Leuchtdioden (z. B. Radial-Leuchdioden) eingesetzte Produktionslinien verwendet werden können. Für die Bauteilumhüllung wird anstelle des bei herkömmlichen Leuchtdioden dafür verwendeten transparenten Kunststoffes einfach die Vergußmasse verwendet.In a preferred use of the potting compound according to the invention is a radiation-emitting semiconductor body (e.g. an LED chip) at least partially enclosed by this. The Potting compound is preferably at the same time as a component covering (Housing) used. The advantage of a semiconductor device according to this embodiment essentially consists in that conventional for its manufacture, for the manufacture of conventional light emitting diodes (e.g. radial light emitting diodes) are used Production lines can be used. For component wrapping is instead of the conventional LEDs the transparent plastic used simply the potting compound used.

    Mit der erfindungsgemäßen Vergußmasse kann auf einfache Weise mit einer einzigen farbigen Lichtquelle, insbesondere einer Leuchtdiode mit einem einzigen blaues Licht abstrahlenden Halbleiterkörper, mischfarbiges, insbesondere weißes Licht erzeugt werden. Um z. B. mit einem blaues Licht aussendenden Halbleiterkörper weißes Licht zu erzeugen, wird ein Teil der von dem Halbleiterkörper ausgesandten Strahlung mittels anorganischer Leuchtstoffpartikel aus dem blauen Spektralbereich in den zu Blau komplementärfarbigen gelben Spektralbereich konvertiert. The potting compound according to the invention can be used in a simple manner with a single colored light source, especially one Light-emitting diode with a single semiconductor body that emits blue light, mixed-colored, especially white light become. To z. B. with a blue light emitting semiconductor body Generating white light becomes part of that Semiconductor body emitted radiation using inorganic Fluorescent particles from the blue spectral range to Blue complementary yellow spectral range converted.

    Die Farbtemperatur oder Farbort des weißen Lichtes kann dabei durch geeignete Wahl des Leuchtstoffes, dessen Partikelgröße und dessen Konzentration, variiert werden. Darüber hinaus können auch Leuchtstoffmischungen eingesetzt werden, wodurch sich vorteilhafterweise der gewünschte Farbton des abgestrahlten Lichtes sehr genau einstellen läßt.The color temperature or color location of the white light can through a suitable choice of the phosphor, its particle size and its concentration. In addition, you can fluorescent mixtures are also used, which makes advantageously the desired hue of the emitted Light can be set very precisely.

    Besonders bevorzugt wird die Vergußmasse bei einem strahlungsemittierenden Halbleiterkörper verwendet, bei dem das ausgesandte Strahlungsspektrum bei einer Wellenlänge zwischen 420nm und 460 nm, insbesondere bei 430 nm (z. B. Halbleiterkörper auf der Basis von GaxAl1-xN) oder 450 nm (z. B. Halbleiterkörper auf der Basis von GaxIn1-xN) ein Intensitätsmaximum aufweist. Mit einem derartigen Halbleiterbauelement lassen sich vorteilhafterweise nahezu sämtliche Farben und Mischfarben der C.I.E.-Farbtafel erzeugen. An Stelle des strahlungsemittierenden Halbleiterkörpers aus elektrolumineszierendem Halbleitermaterial kann aber auch ein anderes elektrolumineszierendes Material, wie beispielsweise Polymermaterial, eingesetzt werden.The potting compound is particularly preferably used in a radiation-emitting semiconductor body in which the radiation spectrum emitted is at a wavelength between 420 nm and 460 nm, in particular at 430 nm (for example semiconductor bodies based on Ga x Al 1-x N) or 450 nm (e.g. semiconductor body based on Ga x In 1-x N) has an intensity maximum. With such a semiconductor component, almost all colors and mixed colors of the CIE color table can advantageously be generated. Instead of the radiation-emitting semiconductor body made of electroluminescent semiconductor material, another electroluminescent material, such as polymer material, can also be used.

    Besonders geeignet ist die Vergußmasse für ein lichtemittierendes Halbleiterbauelement (z. B. eine Leuchtdiode), bei dem der elektrolumineszierende Halbleiterkörper in einer Ausnehmung eines vorgefertigten eventuell bereits mit einem Leadframe versehenen Gehäuses angeordnet ist und die Ausnehmung mit der Vergußmasse versehen ist. Ein derartiges Halbleiterbauelement läßt sich in großer Stückzahl in herkömmlichen Produktionslinien herstellen. Hierzu muß lediglich nach der Montage des Halbleiterkörpers in das Gehäuse die Vergußmasse in die Ausnehmung gefüllt werden.The potting compound is particularly suitable for a light-emitting one Semiconductor component (z. B. a light emitting diode), in which the electroluminescent semiconductor body in a recess of a prefabricated possibly already provided with a lead frame Housing is arranged and the recess with the sealing compound is provided. Such a semiconductor device leaves in large numbers in conventional production lines produce. To do this, only after mounting the semiconductor body the potting compound is filled into the recess in the housing become.

    Ein weißes Licht abstrahlendes Halbleiterbauelement läßt sich mit der erfindungsgemäßen Vergußmasse vorteilhafterweise dadurch herstellen, daß der Leuchtstoff so gewählt wird, daß eine von dem Halbleiterkörper ausgesandte blaue Strahlung in komplementäre Wellenlängenbereiche, insbesondere Blau und Gelb, oder zu additiven Farbtripeln, z. B. Blau, Grün und Rot umgewandelt wird. Hierbei wird das gelbe bzw. das grüne und rote Licht über die Leuchtstoffe erzeugt. Der Farbton (Farbort in der CIE-Farbtafel) des dadurch erzeugten weißen Lichts kann dabei durch geeignete Wahl des/der Leuchtstoffes/e hinsichtlich Mischung und Konzentration variiert werden.A semiconductor device that emits white light can be with the potting compound according to the invention advantageously thereby produce that the phosphor is chosen so that a blue radiation emitted by the semiconductor body into complementary ones Wavelength ranges, in particular blue and yellow, or to additive color triples, e.g. B. converted to blue, green and red becomes. Here the yellow or the green and red light is over which produces phosphors. The color tone (color location in the CIE color chart) of the white light generated in this way can suitable choice of the phosphor (s) with regard to the mixture and concentration can be varied.

    Um die Durchmischung der von einem elektrolumineszierenden Halbleiterkörper ausgesandten Strahlung mit der vom Leuchtstoff konvertierten Strahlung und damit die Farbhomogenität des vom Bauelement abgestrahlten Lichtes zu verbessern, ist bei einer vorteilhaften Ausgestaltung der erfindungsgemäßen Vergußmasse zusätzlich ein im Blauen lumineszierender Farbstoff zugefügt, der eine sogenannte Richtcharakteristik der von dem Halbleiterkörper ausgesandten Strahlung abschwächt. Unter Richtcharakteristik ist zu verstehen, daß die von dem Halbleiterkörper ausgesandte Strahlung eine bevorzugte Abstrahlrichtung aufweist.To the mixing of an electroluminescent Semiconductor body emitted radiation with the phosphor converted radiation and thus the color homogeneity of the To improve component emitted light is one advantageous embodiment of the potting compound according to the invention additionally added a luminescent dye in the blue, which is a so-called directional characteristic of that of the semiconductor body emitted radiation attenuates. Under polar pattern it should be understood that that emitted by the semiconductor body Radiation has a preferred radiation direction.

    Ein weißes Licht abstrahlendes erfindungsgemäßes Halbleiterbauelement mit einem blaues Licht emittierenden elektrolumineszierenden Halbleiterkörper läßt sich besonders bevorzugt dadurch realisieren, daß dem für die Vergußmasse verwendeten Epoxidharz der anorganische Leuchtstoff YAG:Ce (Y3Al5O12:Ce3+) beigemischt ist. Ein Teil einer von dem Halbleiterkörper ausgesandten blauen Strahlung wird von dem anorganischen Leuchtstoff Y3Al5O12:Ce3+ in den gelben Spektralbereich und somit in einen zur Farbe Blau komplementärfarbigen Wellenlängenbereich verschoben. Der Farbton (Farbort in der CIE-Farbtafel) des weißen Lichts kann dabei durch geeignete Wahl der Farbstoffkonzentration variiert werden.A white light-emitting semiconductor component according to the invention with a blue light-emitting electroluminescent semiconductor body can be particularly preferably realized by admixing the inorganic phosphor YAG: Ce (Y 3 Al 5 O 12 : Ce 3+ ) with the epoxy resin used for the sealing compound. Part of a blue radiation emitted by the semiconductor body is shifted by the inorganic phosphor Y 3 Al 5 O 12 : Ce 3+ into the yellow spectral range and thus into a wavelength range complementary to the color blue. The color tone (color location in the CIE color chart) of the white light can be varied by a suitable choice of the dye concentration.

    Der Vergußmasse können zusätzlich lichtstreuende Partikel, sogenannte Diffusoren zugesetzt sein. Hierdurch läßt sich vorteilhafterweise der Farbeindruck und die Abstrahlcharakteristik des Halbleiterbauelements weiter optimieren.The potting compound can also contain light-scattering particles, so-called Diffusers may be added. This advantageously allows the color impression and the radiation characteristics further optimize the semiconductor device.

    Mit der erfindungsgemäßen Vergußmasse kann vorteilhafterweise auch eine von einem elektrolumineszierenden Halbleiterkörper neben der sichtbaren Strahlung ausgesandte ultraviolette Strahlung in sichtbares Licht umgewandelt werden. Dadurch wird die Helligkeit des vom Halbleiterkörper ausgesandten Lichts deutlich erhöht.With the potting compound according to the invention can advantageously also one of an electroluminescent semiconductor body ultraviolet radiation emitted in addition to the visible radiation be converted into visible light. This will make the Brightness of the light emitted by the semiconductor body clearly elevated.

    Ein besonderer Vorteil von erfindungsgemäßen weißes Licht abstrahlenden Halbleiterbauelementen, bei denen als Lumineszenzkonversionsfarbstoff insbesondere YAG:Ce verwendet ist, besteht darin, daß dieser Leuchtstoff bei Anregung mit blauem Licht eine spektrale Verschiebung von ca. 100 nm zwischen Absorption und Emission bewirkt. Dies führt zu einer wesentlichen Reduktion der Reabsorption des vom Leuchtstoff emittierten Lichtes und damit zu einer höheren Lichtausbeute. Außerdem besitzt YAG:Ce vorteilhafterweise eine hohe thermische und photochemische (z. B. UV-) Stabilität (wesentlich höher als organische Leuchtstoffe), so daß auch Weiß leuchtende Dioden für Außenanwendung und/oder hohe Temperaturbereiche herstellbar sind.A particular advantage of white light emitting according to the invention Semiconductor components in which as a luminescence conversion dye in particular YAG: Ce is used in that this fluorescent one when excited with blue light spectral shift of approximately 100 nm between absorption and causes emission. This leads to a substantial reduction the reabsorption of the light emitted by the phosphor and thus to a higher light output. YAG also owns: Ce advantageously high thermal and photochemical (e.g. B. UV) stability (much higher than organic phosphors), so that white diodes for outdoor use and / or high temperature ranges can be produced.

    YAG:Ce hat sich bislang hinsichtlich Reabsorption, Lichtausbeute, thermischer und photochemischer Stabilität und Verarbeitbarkeit als am besten geeigneter Leuchtstoff herausgestellt. Denkbar ist jedoch auch die Verwendung von anderen Ce-dotierten Phosphoren, insbesondere Ce-dotierten Granattypen.YAG: Ce has so far changed in terms of reabsorption, luminous efficacy, thermal and photochemical stability and processability turned out to be the most suitable phosphor. However, the use of other Ce-doped is also conceivable Phosphors, especially Ce-doped garnet types.

    Die Wellenlängenkonversion der Primärstrahlung wird durch die Kristallfeldaufspaltung der aktiven Übergangsmetallzentren im Wirtsgitter bestimmt. Durch die Substitution von Y durch Gd und/oder Lu bzw. Al durch Ga im Y3Al5O12-Granatgitter können die Emissionswellenlängen in unterschiedlicher Weise verschoben werden, wie außerdem durch die Art der Dotierung. Durch die Substitution von Ce3+-Zentren durch Eu3+ und/oder Cr3+ können entsprechende Shifts erzeugt werden. Entsprechende Dotierungen mit Nd3+ und Er3+ ermöglichen sogar aufgrund der größeren Ionenradien und damit geringeren Kristallfeldaufspaltungen IRemittierende Bauelemente.The wavelength conversion of the primary radiation is determined by the crystal field splitting of the active transition metal centers in the host lattice. The substitution of Y by Gd and / or Lu or Al by Ga in the Y 3 Al 5 O 12 grenade grating means that the emission wavelengths can be shifted in different ways, as can also by the type of doping. Corresponding shifts can be generated by substituting Ce 3+ centers with Eu 3+ and / or Cr 3+ . Appropriate doping with Nd 3+ and Er 3+ enables IRemitting components even because of the larger ionic radii and thus lower crystal field splits.

    Weitere Merkmale, Vorteile und Zweckmäßigkeiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung von zwei Ausführungsbeispielen in Verbindung mit den Figuren 1 bis 8. Es zeigen:

  • Figur 1 eine schematische Schnittansicht eines ersten Halbleiterbauelements mit einer erfindungsgemäßen Vergußmasse;
  • Figur 2 eine schematische Schnittansicht eines zweiten Halbleiterbauelements mit einer erfindungsgemäßen Vergußmasse;
  • Figur 3 eine schematische Schnittansicht eines dritten Halbleiterbauelements mit einer erfindungsgemäßen Vergußmasse;
  • Figur 4 eine schematische Schnittansicht eines vierten Halbleiterbauelements mit einer erfindungsgemäßen Vergußmasse;
  • Figur 5 eine schematische Schnittansicht eines fünften Halbleiterbauelements mit einer erfindungsgemäßen Vergußmasse;
  • Figur 6 eine schematische Darstellung eines Emissionsspektrums eines blaues Licht abstrahlenden Halbleiterkörpers mit einer Schichtenfolge auf der Basis von GaN;
  • Figur 7 eine schematische Darstellung der Emissionsspektren zweier Halbleiterbauelemente mit einer erfindungsgemäßen Vergußmasse, die weißes Licht abstrahlen, und
  • Figur 8 eine schematische Darstellung der Emissionsspektren von weiteren Halbleiterbauelementen, die weißes Licht abstrahlen.
    • Further features, advantages and expediencies of the invention result from the following description of two exemplary embodiments in connection with FIGS. 1 to 8.
  • FIG. 1 shows a schematic sectional view of a first semiconductor component with a casting compound according to the invention;
  • FIG. 2 shows a schematic sectional view of a second semiconductor component with a casting compound according to the invention;
  • FIG. 3 shows a schematic sectional view of a third semiconductor component with a casting compound according to the invention;
  • FIG. 4 shows a schematic sectional view of a fourth semiconductor component with a casting compound according to the invention;
  • FIG. 5 shows a schematic sectional view of a fifth semiconductor component with a casting compound according to the invention;
  • FIG. 6 shows a schematic illustration of an emission spectrum of a semiconductor body which emits blue light and has a layer sequence based on GaN;
  • FIG. 7 shows a schematic representation of the emission spectra of two semiconductor components with a potting compound according to the invention, which emit white light, and
  • FIG. 8 shows a schematic representation of the emission spectra of further semiconductor components which emit white light.

    • In den verschiedenen Figuren sind gleiche bzw. gleichwirkende Teile immer mit denselben Bezugszeichen bezeichnet.The different figures have the same or equivalent effects Parts always labeled with the same reference numerals.

    Bei dem lichtemittierenden Halbleiterbauelement von Figur 1 ist der Halbleiterkörper 1 mittels eines elektrisch leitenden Verbindungsmittels, z. B. ein metallisches Lot oder ein Klebstoff, mit seinem Rückseitenkontakt 11 auf einem ersten elektrischen Anschluß 2 befestigt. Der Vorderseitenkontakt 12 ist mittels eines Bonddrahtes 14 mit einem zweiten elektrischen Anschluß 3 verbunden.The light-emitting semiconductor component of Figure 1 is the semiconductor body 1 by means of an electrically conductive connecting means, z. B. a metallic solder or an adhesive, with its rear contact 11 on a first electrical Port 2 attached. The front contact 12 is by means of a bonding wire 14 with a second electrical connection 3 connected.

    Die freien Oberflächen des Halbleiterkörpers 1 und Teilbereiche der elektrischen Anschlüsse 2 und 3 sind unmittelbar von einer gehärteten, wellenlängenkonvertierenden Vergußmasse 5 umschlossen. Diese weist bevorzugt auf: Epoxidgießharz 80 - 90 Gew%, Leuchtstoffpigmente (YAG:Ce) ≤ 15 Gew%, Diethylenglycolmonomethylether ≤ 2 Gew%, Tegopren 6875-45 ≤ 2 Gew%, Aerosil 200 ≤ 5 Gew%The free surfaces of the semiconductor body 1 and partial areas the electrical connections 2 and 3 are directly from one hardened, wavelength-converting potting compound 5 enclosed. This preferably has: epoxy casting resin 80-90% by weight, Fluorescent pigments (YAG: Ce) ≤ 15% by weight, diethylene glycol monomethyl ether ≤ 2% by weight, Tegoprene 6875-45 ≤ 2% by weight, Aerosil 200 ≤ 5 wt%

    Das in Figur 2 dargestellte Ausführungsbeispiel eines erfindungsgemäßen Halbleiterbauelements unterscheidet sich von dem der Figur 1 dadurch, daß der Halbleiterkörper 1 und Teilbereiche der elektrischen Anschlüsse 2 und 3 anstatt von einer wellenlängenkonvertierenden Vergußmasse von einer transparenten Umhüllung 15 umschlossen sind. Diese transparente Umhüllung 15 bewirkt keine Wellenlängenänderung der von dem Halbleiterkörper 1 ausgesandten Strahlung und besteht beispielsweise aus einem in der Leuchtdiodentechnik herkömmlich verwendeten Epoxid-, Silikon- oder Acrylatharz oder aus einem anderen geeigneten strahlungsdurchlässigen Material wie z. B. anorganisches Glas.The embodiment shown in Figure 2 of an inventive Semiconductor device differs from that of Figure 1 in that the semiconductor body 1 and portions of electrical connections 2 and 3 instead of a wavelength converting one Potting compound from a transparent Envelope 15 are enclosed. This transparent envelope 15 causes no change in the wavelength of the semiconductor body 1 emitted radiation and consists for example of one Epoxy, silicone, commonly used in LED technology or acrylic resin or any other suitable radiation-permeable material such. B. inorganic glass.

    Auf diese transparente Umhüllung 15 ist eine Schicht 4 aufgebracht, die aus einer wellenlängenkonvertierenden Vergußmasse, wie in der Figur 2 dargestellt, die gesamte Oberfläche der Umhüllung 15 bedeckt. Ebenso denkbar ist, daß die Schicht 4 nur einen Teilbereich dieser Oberfläche bedeckt. Die Schicht 4 besteht beispielsweise aus einem transparenten Epoxidharz, das mit Leuchtstoffpartikeln 6 versetzt ist. Auch hier eignet sich als Leuchtstoff für ein weiß leuchtendes Halbleiterbauelement bevorzugt YAG:Ce. A layer 4 is applied to this transparent covering 15, made of a wavelength-converting casting compound, as shown in Figure 2, the entire surface of the envelope 15 covered. It is also conceivable that the layer 4 only covered a portion of this surface. Layer 4 exists for example from a transparent epoxy resin, the is mixed with phosphor particles 6. Also suitable here as a phosphor for a white glowing semiconductor component preferably YAG: Ce.

    Bei dem in Figur 3 dargestellten besonders bevorzugten mit der erfindungsgemäßen Vergußmasse versehenen Bauelement, sind der erste und zweite elektrische Anschluß 2,3 in ein lichtundurchlässiges evtl. vorgefertigtes Grundgehäuse 8 mit einer Ausnehmung 9 eingebettet. Unter "vorgefertigt" ist zu verstehen, daß das Grundgehäuse 8 bereits an den Anschlüssen 2,3 beispielsweise mittels Spritzguß fertig ausgebildet ist, bevor der Halbleiterkörper auf den Anschluß 2 montiert wird. Das Grundgehäuse 8 besteht beispielsweise aus einem lichtundurchlässigen Kunststoff und die Ausnehmung 9 ist hinsichtlich ihrer Form als Reflektor 17 für die vom Halbleiterkörper im Betrieb ausgesandte Strahlung (ggf. durch geeignete Beschichtung der Innenwände der Ausnehmung 9) ausgebildet. Solche Grundgehäuse 8 werden insbesondere bei auf Leiterplatten oberflächenmontierbaren Leuchtdioden verwendet. Sie werden vor der Montage der Halbleiterkörper auf ein die elektrischen Anschlüsse 2,3 aufweisendes Leiterband (Leadframe) z. B. mittels Spritzgießen aufgebracht.In the particularly preferred shown in Figure 3 with the Potting compound provided according to the invention are the first and second electrical connection 2,3 in an opaque possibly prefabricated basic housing 8 with a recess 9 embedded. "Prefabricated" means that the basic housing 8 already at the connections 2, 3, for example is finished by injection molding before the semiconductor body is mounted on connection 2. The basic housing 8 consists for example of an opaque plastic and the recess 9 is in terms of its shape as a reflector 17 for those emitted by the semiconductor body during operation Radiation (if necessary by suitable coating of the inside walls of the Recess 9) formed. Such basic housing 8 in particular for light-emitting diodes that can be surface-mounted on printed circuit boards used. You will be assembling the semiconductor body on a conductor strip having the electrical connections 2, 3 (Leadframe) e.g. B. applied by injection molding.

    Die Ausnehmung 9 ist mit einer Vergußmasse 5, deren Zusammensetzung der oben in Verbindung mit der Beschreibung zu Figur 1 angegebenen entspricht, gefüllt.The recess 9 is with a potting compound 5, the composition the above in connection with the description of FIG. 1 specified specified, filled.

    In Figur 4 ist eine sogenannte Radialdiode dargestellt. Hierbei ist der elektrolumineszierende Halbleiterkörper 1 in einem als Reflektor ausgebildeten Teil 16 des ersten elektrischen Anschlußes 2 beispielsweise mittels Löten oder Kleben befestigt. Derartige Gehäusebauformen sind in der Leuchtdiodentechnik bekannt und bedürfen von daher keiner näheren Erläuterung.A so-called radial diode is shown in FIG. in this connection is the electroluminescent semiconductor body 1 in a as Reflector-formed part 16 of the first electrical connection 2 attached for example by soldering or gluing. Such housing designs are known in light-emitting diode technology and therefore require no further explanation.

    Die freien Oberflächen des Halbleiterkörpers 1 sind unmittelbar von einer Vergußmasse 5 mit Leuchtstoffpartikel 6 bedeckt, die wiederum von einer weiteren transparenten Umhüllung 10 umgeben ist. The free surfaces of the semiconductor body 1 are immediate covered with a potting compound 5 with phosphor particles 6, the again surrounded by a further transparent covering 10 is.

    Der Vollständikeit halber sei an dieser Stelle angemerkt, daß selbstverständlich auch bei der Bauform nach Figur 4 analog zu dem Bauelement gemäß Figur 1 eine einstückige Umhüllung, bestehend aus gehärteter Vergußmasse 5 mit Leuchtstoffpartikel 6, verwendet sein kann.For the sake of completeness, it should be noted at this point that of course also analogous to the design according to FIG. 4 the component according to Figure 1, consisting of a one-piece casing made of hardened casting compound 5 with phosphor particles 6, can be used.

    Bei dem Ausführungsbeispiel von Figur 5 ist eine Schicht 4 (mögliche Materialien wie oben angegeben) direkt auf den Halbleiterkörper 1 aufgebracht. Dieser und Teilbereiche der elektrischen Anschlüsse 2,3 sind von einer weiteren transparenten Umhüllung 10 umschlossen, die keine Wellenlängenänderung der durch die Schicht 4 hindurchgetretenen Strahlung bewirkt und beispielsweise aus einem in der Leuchtdiodentechnik verwendbaren transparenten Epoxidharz oder aus Glas gefertigt ist.In the exemplary embodiment in FIG. 5, there is a layer 4 (possible materials as stated above) directly on the semiconductor body 1 applied. This and parts of the electrical Connections 2,3 are of another transparent Envelope 10 enclosed, which does not change the wavelength caused through the layer 4 radiation and for example from a usable in light emitting diode technology transparent epoxy resin or made of glass.

    Solche, mit einer Schicht 4 versehenen Halbleiterkörper 1 ohne Umhüllung können natürlich vorteilhafterweise in sämtlichen aus der Leuchtdiodentechnik bekannten Gehäusebauformen (z. B. SMD-Gehäuse, Radial-Gehäuse (man vergleiche Figur 4) verwendet sein.Such, provided with a layer 4 semiconductor body 1 without Wrapping can of course advantageously be made in all Housing designs known from LED technology (e.g. SMD housing, Radial housing (see Figure 4) is used his.

    Bei sämtlichen der oben beschriebenen Bauelemente kann zur Optimierung des Farbeindrucks des abgestrahlten Lichts sowie zur Anpassung der Abstrahlcharakteristik die Vergußmasse 5, ggf. die transparente Umhüllung 15, und/oder ggf. die weitere transparente Umhüllung 10 lichtstreuende Partikel, vorteilhafterweise sogenannte Diffusoren aufweisen. Beispiele für derartige Diffusoren sind mineralische Füllstoffe, insbesondere CaF2, TiO2, SiO2, CaCO3 oder BaSO4 oder auch organische Pigmente. Diese Materialien können auf einfache Weise Epoxidharzen zugesetzt werden.In all of the components described above, in order to optimize the color impression of the emitted light and to adapt the emission characteristics, the potting compound 5, possibly the transparent covering 15, and / or the further transparent covering 10 can advantageously have light-scattering particles, advantageously so-called diffusers. Examples of such diffusers are mineral fillers, in particular CaF 2 , TiO 2 , SiO 2 , CaCO 3 or BaSO 4 or organic pigments. These materials can easily be added to epoxy resins.

    In den Figuren 6, 7 und 8 sind Emissionsspektren eines blaues Licht abstrahlenden Halbleiterkörpers (Fig. 6) (Lumineszenzmaximum bei λ ∼ 430 nm) bzw. von mittels eines solchen Halbleiterkörpers hergestellten Weiß leuchtenden Halbleiterbauelementen (Fig. 7 und 8) gezeigt. An der Abszisse ist jeweils die Wellenänge λ in nm und auf der Ordinate ist jeweils eine relative Elektrolumineszenz(EL)-Intensität aufgetragen.FIGS. 6, 7 and 8 show emission spectra of a blue one Light-emitting semiconductor body (Fig. 6) (Luminescence maximum at λ ∼ 430 nm) or by means of such Semiconductor body manufactured white luminous semiconductor components (Figs. 7 and 8) shown. Is on the abscissa is the wavelength λ in nm and on the ordinate, respectively a relative electroluminescence (EL) intensity is plotted.

    Von der vom Halbleiterkörper ausgesandten Strahlung nach Figur 6 wird nur ein Teil in einen längerwelligen Wellenlängenbereich konvertiert, so daß als Mischfarbe weißes Licht entsteht. Die gestrichelte Linie 30 in Figur 7 stellt ein Emissionsspektrum von einem Halbleiterbauelement dar, das Strahlung aus zwei komplementären Wellenlängenbereichen (Blau und Gelb) und damit insgesamt weißes Licht aussendet. Das Emissionsspektrum weist hier bei Wellenlängen zwischen ca. 400 und ca. 430 nm (Blau) und zwischen ca. 550 und ca. 580 nm (Gelb) je ein Maximum auf. Die durchgezogene Linie 31 repräsentiert das Emissionsspektrum eines Halbleiterbauelements, das die Farbe Weiß aus drei Wellenlängenbereichen (additives Farbtripel aus Blau, Grün und Rot) mischt. Das Emissionsspektrum weist hier beispielsweise bei den Wellenlängen von ca. 430 nm (Blau), ca. 500 nm (Grün) und ca. 615 nm (Rot) je ein Maximum auf.From the radiation emitted by the semiconductor body according to FIG. 6 will only be part of a longer wavelength range converted so that white light is created as a mixed color. The Dashed line 30 in Figure 7 represents an emission spectrum of a semiconductor device that emits radiation from two complementary Wavelength ranges (blue and yellow) and thus emits a total of white light. The emission spectrum shows here at wavelengths between approx. 400 and approx. 430 nm (blue) and a maximum between about 550 and about 580 nm (yellow). The solid line 31 represents the emission spectrum of a semiconductor device that has the color white from three wavelength ranges (Additive color triplet of blue, green and Red) mixes. The emission spectrum shows here, for example at the wavelengths of approx. 430 nm (blue), approx. 500 nm (green) and about 615 nm (red) each a maximum.

    Figur 8 zeigt ein Emissionsspektrum eines Weiß leuchtendes Halbleiterbauelement, das mit einem ein Emissions-Spektrum gemäß Figur 6 aussendenden Halbleiterkörper versehen ist und bei dem als Leuchtstoff YAG:Ce verwendet ist. Von der vom Halbeiterkörper ausgesandten Strahlung nach Figur 6 wird nur ein Teil in einen längerwelligen Wellenlängenbereich konvertiert, so daß als Mischfarbe weißes Licht entsteht. Die verschiedenartig gestrichelten Linien 30 bis 33 von Figur 8 stellen Emissionsspektren von erfindungsgemäßen Halbleiterbauelementen dar, bei denen das Epoxidharz der Vergußmasse 5 unterschiedliche YAG:Ce-Konzentrationen aufweist. Jedes Emissionsspektrum weist zwischen λ = 420 nm und λ = 430 nm, also im blauen Spektralbereich, und zwischen λ = 520 nm und λ = 545 nm, also im grünen Spektralbereich, jeweils ein Intensitätsmaximum auf, wobei die Emissionsbanden mit dem längerwelligen Intensitätsmaximum zu einem großen Teil im gelben Spektralbereich liegen. Das Diagramm von Figur 8 verdeutlicht, daß bei dem erfindungsgemäßen Halbleiterbauelement auf einfache Weise durch Veränderung der Leuchtstoffkonzentration im Epoxidharz der CIE-Farbort des weißen Lichtes verändert werden kann.FIG. 8 shows an emission spectrum of a white light Semiconductor component with an emission spectrum according to 6 emitting semiconductor body is provided and at which is used as the phosphor YAG: Ce. From that of the semiconductor body only a part of the radiation emitted according to FIG. 6 converted to a longer wavelength range, so that white light is created as a mixed color. The different dashed lines Lines 30 to 33 of Figure 8 represent emission spectra of semiconductor components according to the invention, in which the epoxy resin of the potting compound 5 different YAG: Ce concentrations having. Each emission spectrum has between λ = 420 nm and λ = 430 nm, i.e. in the blue spectral range, and between λ = 520 nm and λ = 545 nm, i.e. in the green Spectral range, each an intensity maximum, the Emission bands with the longer-wave intensity maximum a large part are in the yellow spectral range. The diagram of Figure 8 illustrates that in the inventive Semiconductor device in a simple manner by changing the Fluorescent concentration in the epoxy resin is the CIE color locus of the white Light can be changed.

    Die Erläuterung der Erfindung anhand der oben beschriebenen Bauelemente ist natürlich nicht als Beschränkung der Erfindung auf diese zu betrachten. Als Halbleiterkörper, wie beispielsweise Leuchtdioden-Chips oder Laserdioden-Chips, ist beispielsweise auch eine Polymer-LED zu verstehen, die ein enstprechendes Strahlungsspektrum aussendet.The explanation of the invention with reference to that described above Components are of course not a limitation of the invention to look at this. As a semiconductor body, such as Light-emitting diode chips or laser diode chips, for example also understand a polymer LED, which is a corresponding Emits radiation spectrum.

    Claims (25)

    1. Wavelength-converting casting compound (5) based on a transparent epoxy resin for an electroluminescent component with a body (1) emitting ultraviolet, blue and/or green light, in which an inorganic luminescent pigment powder with luminescent pigments (6) from the group of phosphors with the general formula A3B5X12:M is dispersed in the transparent epoxy resin, and the luminescent pigments have particle sizes ≤ 20 µm and a mean particle diameter d50 ≤ 5 µm.
    2. Casting compound according to Claim 1, in which the luminescent pigments (6) are spherical or in the form of flakes.
    3. Casting compound according to Claim 1 or 2, in which the mean particle diameter d50 lies between 1 and 2 µm.
    4. Casting compound according to one of Claims 1 to 3, which is made up of:
      a) epoxy resin ≥ 60% by weight
      b) luminescent pigments > 0 and ≤ 25% by weight
      c) thixotropic agent > 0 and ≤ 10% by weight
      d) mineral diffusor > 0 and ≤ 10% by weight
      e) processing auxiliary > 0 and ≤ 3% by weight
      f) hydrophobing agent > 0 and ≤ 3% by weight
      g) adhesion promoter > 0 and ≤ 2% by weight.
    5. Casting compound according to one of Claims 1 to 4, in which particles from the group of Ce-doped garnets are used as luminescent pigments.
    6. Casting compound according to Claim 5, in which YAG:Ce particles are used as luminescent pigments.
    7. Casting compound according to one of Claims 1 to 6, in which the iron content is ≤ 20 ppm.
    8. Casting compound according to one of Claims 1 to 7, in which the luminescent pigments (6) are provided with a silicone coating.
    9. Method for producing a Casting compound for a light-emitting component with a body (1) emitting ultraviolet, blue or green light, in which an inorganic luminescent pigment powder is dispersed in a transparent epoxy resin, with luminescent pigments (6) from the group of phosphors with the general formula A3B5X12:M which have particle sizes ≤ 20 µm and a mean particle diameter d50 ≤ 5 µm.
    10. Method according to Claim 9, in which the luminescent pigment powder is heat-treated at a temperature ≥ 200°C before mixing with the epoxy resin.
    11. Method according to Claim 9 or 10, in which the luminescent pigment powder is washed in a higher-boiling alcohol and then dried before mixing with the epoxy resin.
    12. Method according to one of Claims 9 to 11, in which a hydrophobing silicone wax is added to the luminescent pigment powder before mixing with the epoxy resin.
    13. Method according to one of Claims 9 to 12, in which the luminescent pigment powder is surface-modified with alcohols, glycol ethers and silicones in the epoxy resin at elevated temperatures.
    14. Method according to one of Claims 9 to 13, in which luminescent pigments (6) which are spherical or in the form of flakes are used.
    15. Method according to one of Claims 9 to 14, in which luminescent pigments whose mean particle diameter d50 lies between 1 and 2 µm are used.
    16. Method according to one of Claims 9 to 15, in which
      a) epoxy resin ≥ 60% by weight
      b) luminescent pigments > 0 and ≤ 25% by weight
      c) thixotropic agent > 0 and ≤ 10% by weight
      d) mineral diffusor > 0 and ≤ 10% by weight
      e) processing auxiliary > 0 and ≤ 3% by weight
      f) hydrophobing agent > 0 and ≤ 3% by weight
      g) adhesion promoter > 0 and ≤ 2% by weight
      are mixed.
    17. Method according to one of Claims 9 to 16, in which particles from the group of Ce-doped garnets are used as luminescent pigments.
    18. Method according to Claim 17, in which YAG:Ce particles are used as luminescent pigments.
    19. Method according to one of Claims 9 to 18, in which the luminescent pigments (6) are provided with a silicone coating.
    20. Method for producing a light-emitting semiconductor component, in which a semiconductor body (1), which has a semiconductor layer sequence (7) that is suitable for emitting electromagnetic radiation from the ultraviolet, blue and/or green spectral range during operation of the semiconductor component, is at least partially encased by a casting compound according to one of Patent Claims 1 to 8.
    21. Light-emitting semiconductor component, produced using a casting compound according to one of Patent Claims 1 to 8, with a semiconductor body (1), which has a semiconductor layer sequence (7) that is suitable for emitting electromagnetic radiation from the ultraviolet, blue and/or green spectral range during operation of the semiconductor component, and the luminescent pigments convert a part of the radiation coming from this spectral range into radiation with a longer wavelength, such that the semiconductor component emits mixed radiation, in particular mixed-colour light, consisting of this radiation and of radiation from the ultraviolet, blue and/or green spectral range.
    22. Light-emitting semiconductor component according to Claim 21, in which the casting compound encases at least a part of the semiconductor body (1).
    23. Light-emitting semiconductor component according to Claim 21 or 22, in which the radiation emitted by the semiconductor body (1) has a luminescence-intensity maximum in the blue spectral range at λ = 430 nm or at λ = 450 nm.
    24. Light-emitting semiconductor component according to one of Claims 21 to 23, in which the semiconductor body (1) is arranged in a recess (9) of an opaque base package (8), and the recess (9) is filled at least partially with the casting compound (5).
    25. Light-emitting semiconductor component according to one of Claims 21 to 24, in which the casting compound (5) is provided with various luminescent pigments (6) that differ with respect to host lattice and type and level of the doping.
    EP97909167A 1996-09-20 1997-09-22 Sealing material with wavelength converting effect and its production process, process of fabricating a light emitting semiconductor device and light emitting semiconductor device Expired - Lifetime EP0862794B1 (en)

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    EP02007512A EP1221724B1 (en) 1996-09-20 1997-09-22 Sealing material with wavelength converting effect, application and production process
    DE29724849U DE29724849U1 (en) 1996-09-20 1997-09-22 Light-emitting optical component with a wavelength-converting casting compound
    DE29724382U DE29724382U1 (en) 1996-09-20 1997-09-22 Wavelength converting potting compound and light-emitting semiconductor component
    DE29724284U DE29724284U1 (en) 1996-09-20 1997-09-22 Wavelength converting potting compound and light-emitting semiconductor component

    Applications Claiming Priority (3)

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    DE19638667 1996-09-20
    DE19638667A DE19638667C2 (en) 1996-09-20 1996-09-20 Mixed-color light-emitting semiconductor component with luminescence conversion element
    PCT/DE1997/002139 WO1998012757A1 (en) 1996-09-20 1997-09-22 Sealing material with wavelength converting effect, application and production process

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    JP2002208733A (en) 2002-07-26
    JP2002317177A (en) 2002-10-31
    DE29724849U1 (en) 2004-09-30
    DE19638667A1 (en) 1998-04-02
    US20070216281A1 (en) 2007-09-20
    WO1998012757A1 (en) 1998-03-26
    DE29724382U1 (en) 2000-12-21
    KR20070068489A (en) 2007-06-29
    JP2002232002A (en) 2002-08-16
    CN101081909A (en) 2007-12-05
    KR19990071493A (en) 1999-09-27
    KR20050084535A (en) 2005-08-26
    DE19638667C2 (en) 2001-05-17
    CN1560931A (en) 2005-01-05
    KR100908172B1 (en) 2009-07-16
    KR100875010B1 (en) 2008-12-19
    DE59708820D1 (en) 2003-01-09
    EP0862794A1 (en) 1998-09-09
    US20040084687A1 (en) 2004-05-06
    KR20080086557A (en) 2008-09-25
    EP1221724A3 (en) 2005-07-06
    DE29724849U9 (en) 2005-04-21
    US20010045647A1 (en) 2001-11-29
    EP1221724B1 (en) 2011-02-16
    JP2000236112A (en) 2000-08-29
    JP4233252B2 (en) 2009-03-04
    KR100908170B1 (en) 2009-07-16
    CN100367521C (en) 2008-02-06
    EP1221724A2 (en) 2002-07-10

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