EP0674238A2 - Carrier for electrophotography having a double metaloxide coating - Google Patents
Carrier for electrophotography having a double metaloxide coating Download PDFInfo
- Publication number
- EP0674238A2 EP0674238A2 EP95103638A EP95103638A EP0674238A2 EP 0674238 A2 EP0674238 A2 EP 0674238A2 EP 95103638 A EP95103638 A EP 95103638A EP 95103638 A EP95103638 A EP 95103638A EP 0674238 A2 EP0674238 A2 EP 0674238A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- carrier
- layer
- oxide
- metal
- carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 27
- 238000000576 coating method Methods 0.000 title abstract description 13
- 239000011248 coating agent Substances 0.000 title abstract description 12
- 239000000969 carrier Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000007786 electrostatic charging Methods 0.000 claims abstract description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 230000007062 hydrolysis Effects 0.000 claims description 6
- 238000006460 hydrolysis reaction Methods 0.000 claims description 6
- 150000002739 metals Chemical group 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
- 125000001190 organyl group Chemical group 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 125000005595 acetylacetonate group Chemical group 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- -1 β-diketones Chemical class 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007600 charging Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229960004592 isopropanol Drugs 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005243 fluidization Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910002771 BaFe12O19 Inorganic materials 0.000 description 1
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 description 1
- 101100149686 Caenorhabditis elegans snr-4 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002402 SrFe12O19 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- APQHKWPGGHMYKJ-UHFFFAOYSA-N Tributyltin oxide Chemical compound CCCC[Sn](CCCC)(CCCC)O[Sn](CCCC)(CCCC)CCCC APQHKWPGGHMYKJ-UHFFFAOYSA-N 0.000 description 1
- 229910001308 Zinc ferrite Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000006103 coloring component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- LVWZTYCIRDMTEY-UHFFFAOYSA-N metamizole Chemical compound O=C1C(N(CS(O)(=O)=O)C)=C(C)N(C)N1C1=CC=CC=C1 LVWZTYCIRDMTEY-UHFFFAOYSA-N 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- AFCAKJKUYFLYFK-UHFFFAOYSA-N tetrabutyltin Chemical group CCCC[Sn](CCCC)(CCCC)CCCC AFCAKJKUYFLYFK-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical group C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- OIQCWAIEHVRCCG-UHFFFAOYSA-N tetrapropylstannane Chemical group CCC[Sn](CCC)(CCC)CCC OIQCWAIEHVRCCG-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- WGEATSXPYVGFCC-UHFFFAOYSA-N zinc ferrite Chemical compound O=[Zn].O=[Fe]O[Fe]=O WGEATSXPYVGFCC-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G9/00—Developers
- G03G9/08—Developers with toner particles
- G03G9/10—Developers with toner particles characterised by carrier particles
- G03G9/113—Developers with toner particles characterised by carrier particles having coatings applied thereto
- G03G9/1139—Inorganic components of coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G9/00—Developers
- G03G9/08—Developers with toner particles
- G03G9/10—Developers with toner particles characterised by carrier particles
- G03G9/107—Developers with toner particles characterised by carrier particles having magnetic components
- G03G9/1075—Structural characteristics of the carrier particles, e.g. shape or crystallographic structure
Definitions
- the invention also relates to the production of these carriers and their use for the production of two-component electrophotographic developers.
- Two-component developers are used in electrophotographic copiers and laser printers to develop an electrophotographically generated latent image and usually consist of carrier particles and toner particles.
- the carrier particles are magnetizable particles with sizes of generally 20 to 1000 ⁇ m.
- the toner particles consist essentially of a coloring component and binder and are about 5 to 30 microns in size.
- the electrostatic, latent image is generated in the copying process by selective exposure of an electrostatically charged photoconductor roller with light reflected from the original. In the laser printer, this is done by a laser beam.
- toner particles are transported to the photoconductor roller via a "magnetic brush", that is carrier particles aligned along the field lines of a sector magnet.
- the toner particles adhere electrostatically to the carrier particles and receive an electrostatic charge opposite to the carrier particles when they are transported in the magnetic field by friction.
- the toner particles thus transferred from the magnetic brush to the photoconductor roller result in a "toner image”, which is then transferred to electrostatically charged paper and fixed.
- the carrier particles used have to meet a number of requirements: They should be magnetizable and thus enable the magnetic brush to be assembled quickly. Furthermore, their surface should have a low conductivity in order to prevent a short circuit between the sector magnet and the photoconductor roller. This conductivity should remain constant over long operating times of the carrier in order to keep the triboelectric charging of the developer constant for a long time. Last but not least, the carrier particles should also be flowable and not clump in the developer reservoir.
- the carrier particles consisting of magnetic material generally have to be coated.
- German patent application P 44 03 678.7 also describes two carriers, coated with a metal and a metal oxide layer, which have low resistances of generally 103 to 108 ohms.
- Carriers that cause both strong, in particular positive, toner charging and at the same time have an electrically insulating effect are not yet known. Such carriers are of particular interest for office copiers and other slower-working systems.
- the invention was therefore based on the object of providing carriers for electrophotography which correspond to this property profile.
- metal oxide layers are wet-chemically by hydrolysis of organic metal compounds in which the organic radicals are bonded to the metals via oxygen atoms, in the presence of an organic solvent in which the metal compounds are soluble are, or by gas phase decomposition of volatile metal compounds in the presence of oxygen and / or water vapor onto the carrier cores.
- the cores of the carriers according to the invention can consist of the usual soft magnetic materials such as iron, steel, magnetite, ferrites (for example nickel / zinc, manganese / zinc and barium / zinc ferrites), cobalt and nickel or of hard magnetic materials such as BaFe12O19 or SrFe12O19 and as spherical or irregularly shaped particles or in sponge form.
- soft magnetic materials such as iron, steel, magnetite, ferrites (for example nickel / zinc, manganese / zinc and barium / zinc ferrites), cobalt and nickel or of hard magnetic materials such as BaFe12O19 or SrFe12O19 and as spherical or irregularly shaped particles or in sponge form.
- composite carriers i.e. particles of these metals or metal compounds embedded in polymer resin, are also suitable.
- Titanium dioxide, aluminum oxide, iron oxide and above all silicon dioxide and also mixtures thereof are particularly suitable for the first metal oxide layer (A), which has an electrically insulating effect.
- the thickness of layer (A) depends on the desired level of electrical resistance of the carrier and is generally 10 to 500 nm, preferably 30 to 300 nm and particularly preferably 50 to 200 nm.
- metal oxides such as molybdenum oxide, tungsten oxide and tin dioxide causing strong positive toner charging are particularly preferred.
- layer (B) should be chosen to be more or less thin.
- Conductive layers (B) that are too thick reduce the electrical resistance of the carrier caused by layer (A); those layers (B) which reduce the resistance by no more than about 1.5 powers of ten are particularly suitable.
- the layer (B) will therefore be 1 to 50 nm, preferably 2 to 20 nm thick.
- the metal oxide layers are either wet-chemically by hydrolysis of organic metal compounds in which the organic radicals are bonded to the metals via oxygen atoms, in the presence of an organic solvent or by gas phase decomposition of volatile metal compounds in the presence of oxygen and / or chemical vapor deposition (CVD) is applied to the carrier cores.
- CVD chemical vapor deposition
- the wet chemical process variant is particularly suitable for coating with silicon oxide.
- the other metal oxides can also be applied by precipitation from aqueous solutions or from solutions in organic solvents.
- Suitable organic solvents for this purpose are both aprotic solvents such as ketones, ⁇ -diketones, ethers, especially cyclic ethers, and nitrogen-containing solvents, e.g. amidic solvents, as well as protic solvents such as mono- or polyhydric alcohols, preferably having 1 to 6 carbon atoms, which are miscible with water.
- aprotic solvents such as ketones, ⁇ -diketones, ethers, especially cyclic ethers, and nitrogen-containing solvents, e.g. amidic solvents
- protic solvents such as mono- or polyhydric alcohols, preferably having 1 to 6 carbon atoms, which are miscible with water.
- Examples of preferred solvents are acetone, tetrahydrofuran, ethanol and n- and iso-propanol as well as diethyl ketone, acetylacetone, dioxane, trioxane, ethylene glycol, propylene glycol, glycerol, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, pyridone and acetonitrile.
- Suitable metal-containing starting compounds in the organic solvents mentioned are organic compounds in which the organic radicals are bonded to the metals via oxygen atoms.
- Preferred examples are the acetylacetonates and in particular alcoholates, especially C1-C4 alkanolates, for example tetraethoxysilane and aluminum triisopropanolate.
- the hydrolysis is preferably carried out in the presence of a base or an acid as a catalyst.
- a base or an acid as a catalyst.
- alkali solutions such as sodium hydroxide solution, especially aqueous ammonia solutions.
- Suitable acidic catalysts are, for example, phosphoric acid and organic acids such as acetic acid and oxalic acid.
- Water should be present at least in the stoichiometric amount required for the hydrolysis, but 2 to 100 times, in particular 5 to 20 times, is preferred.
- aqueous ammonia solution Based on the amount of water used, 3 to 40% by volume, preferably 5 to 30% by volume, of a 25% by weight aqueous ammonia solution are generally added.
- the temperature control it has proven advantageous to gradually heat the reaction mixture to reflux temperature within 10 to 48 h. If isopropanol is used as the solvent, the mixture is preferably stirred, for example, first for 4 to 20 hours at 40 ° C., then for 4 to 20 hours at 60 ° C. and finally for 2 to 8 hours at 80 ° C.
- the carrier cores, organic solvent, water and base are introduced and the metal compound to be hydrolyzed, pure or dissolved, for example as a 30 to 70, preferably 40 to 60,% by volume solution in the organic solvent. If the metal compound is added in one step, the suspension is then heated with stirring as described above. However, the metal compound can also be metered in continuously at elevated temperature, the water preferably not being initially introduced, but also metered in continuously. After the coating has ended, the reaction mixture is cooled again to room temperature.
- the suspension can be subjected to strong mechanical stress such as pumping, vigorous stirring or the action of ultrasound.
- the coating step can be repeated if desired, but this will generally not be necessary. If the mother liquor looks milky, it is advisable to replace it before applying another coating.
- the carrier cores coated with layer (A) can be isolated in a simple manner by filtration, washing with organic solvent, preferably the alcohols also used as solvent, and subsequent drying (usually 1 to 5 h at 100 to 250 ° C.).
- the metal alcoholates, metal halides, metal carbonyls and metal organyls are suitable as volatile metal compounds for the CVD process variant.
- Titanium alcoholates especially titanium tetraisopropanolate, also silicon halides such as silicon tetrachloride, iron carbonyls, especially iron pentacarbonyl, molybdenum carbonyls, especially molybdenum hexacarbonyl, also molybdenum aryls, especially dibenzene molybdenum, tungsten carbonyls, especially tungsten hexacarbonyl, in particular zirconium halide, such as zamfromhalohalogenol, such as C1-C6 alkyls such as aluminum trimethyl, triethyl and triisobutyl.
- silicon halides such as silicon tetrachloride
- iron carbonyls especially iron pentacarbonyl
- molybdenum carbonyls especially molybdenum hexacarbonyl
- molybdenum aryls especially dibenzene molybdenum
- tungsten carbonyls especially tungs
- tin organyls should also be mentioned as suitable tin compounds, which are essentially non-decomposable under inert conditions and which are oxidative, e.g. can be decomposed to tin dioxide by reaction with oxygen or air or other oxygen / inert gas mixtures, since they enable a particularly gentle coating of the carrier cores.
- Particularly suitable are especially compounds of the formula SnR4 in which the radicals R are identical or different and are alkyl, alkenyl or aryl, e.g. Tin tetraalkyls, tin tetraalkenyls and tin tetraaryls as well as mixed binary binary alkyls and tin alkylalkenyls.
- the number of carbon atoms in the alkyl, alkenyl and aryl radicals is not important, but preference is given to those compounds which unite at temperatures up to about 200.degree have sufficiently high vapor pressure to ensure easy evaporation.
- bi- or polynuclear tin organyls which can be bridged, for example, via oxygen atoms, can also be used.
- organotin compounds are tin diallyldibutyl, tin tetraamyl, tin tetra-n-propyl, bis (tri-n-butyltin) oxide and especially tin tetra-n-butyl and tin tetramethyl.
- the decomposition temperatures for the tin organyls are generally 200 to 1000 ° C., preferably 300 to 500 ° C.
- the temperature and also the amount of oxygen are expediently chosen so that the oxidation of the organic residues to carbon dioxide and water is complete and no carbon is incorporated into the tin dioxide layer. If less oxygen is introduced than is stoichiometrically required, depending on the temperature selected, either the tin organyl is only partially decomposed and then condenses in the exhaust gas area, or soot and other decomposition products are formed.
- the evaporator gas stream containing the tin organyl should expediently be set so that the gaseous tin organyl does not make up more than about 10% by volume of the total amount of gas in the reactor in order to avoid the formation of finely divided, particulate tin dioxide.
- Favorable tin organyl concentration in the carrier stream itself is usually ⁇ 5% by volume.
- the oxidative decomposition of the metal carbonyls and the further metal organyls to give the corresponding metal oxides is preferably likewise carried out using oxygen or air or other oxygen / inert gas mixtures. Reaction temperatures of 100 to 400 ° C. are generally suitable for this.
- the decomposition of the aluminum alkyl is usually carried out at 200 to 1000 ° C, preferably 300 to 500 ° C.
- the hydrolysis of the metal halides or alcoholates with steam to form the metal oxides is usually carried out at 100 to 600 ° C., the halides generally requiring the higher temperatures.
- Suitable reactors for gas phase coating are fixed or rotating tubes or moving mixing units in which there is a moving fixed bed or a fluidized bed of the carrier cores to be coated.
- the movement of the carrier cores can take place by fluidization with a gas stream, by free-fall mixing, by the action of gravity or with the aid of stirring elements in the reactor.
- the concentration of the vaporized metal compound (as well as the reaction gases) in the carrier gas should preferably be ⁇ 5% by volume in order to ensure a uniform coating of the carrier.
- the evaporation rates and the reaction temperatures should, as already described above for the tin organyls, also be chosen so that the most complete possible conversion takes place and no fine-particle metal oxide is formed which would be discharged with the exhaust gas stream. Further details can be found in DE-A-41 40 900.
- the carriers according to the invention are notable for the high quality of the metal oxide layers applied (homogeneous, film-like and abrasion-resistant) and have a resistance in the desired range of> 10 11 ohms, that is to say they have an electrically insulating effect.
- aqueous ammonia solution 180 ml of a 25% strength by weight aqueous ammonia solution were added to a suspension of 4.5 kg of a ferrite carrier (barium / zinc ferrite, particle size 45 to 105 ⁇ m, type KBN 100 from Hitachi, Japan) in 2250 ml of isopropanol. After the mixture had been heated to 40 ° C., 720 ml (669.6 g) of tetraethoxysilane were added dropwise in the course of 10 minutes.
- a ferrite carrier barium / zinc ferrite, particle size 45 to 105 ⁇ m, type KBN 100 from Hitachi, Japan
- a silicon content of 0.42% by weight was determined by means of atomic absorption spectroscopy.
- the carrier was cooled to room temperature with further fluidization with nitrogen.
- a molybdenum content of 0.08% by weight was determined by means of atomic absorption spectroscopy.
- the electrical resistance of the carrier was measured with the C-meter from the PES laboratory (Dr. R. Epping, Neufahrn).
- the carrier particles were subjected to this for 30 s in a magnetic field of 600 gauss a voltage U o of 10 V.
- the capacitance C was 1 nF.
- the resistance R is usually specified in logarithmic values (log R [log ohms]).
- the carrier was mixed with a polyester resin toner suitable for commercial laser printers (crosslinked fumaric acid / propoxylated bisphenol A resin with an average particle size of 11 ⁇ m and a particle size distribution of 6 to 17 ⁇ m) in a weight ratio of 97: 3 and for activation in mixed in a 30 ml glass vessel for 10 minutes in a tumble mixer at 200 rpm.
- a polyester resin toner suitable for commercial laser printers crosslinked fumaric acid / propoxylated bisphenol A resin with an average particle size of 11 ⁇ m and a particle size distribution of 6 to 17 ⁇ m
Abstract
Description
Die vorliegende Erfindung betrifft neue Carrier für die Elektrophotographie auf der Basis von mit verschiedenen Metalloxiden beschichteten magnetischen Kernen, die
- A) eine erste, im wesentlichen aus elektrisch isolierendem Metalloxid bestehende Schicht und
- B) eine zweite, im wesentlichen aus die elektrostatische Aufladung des Toners steuerndem Metalloxid bestehende Schicht, welche den durch die Schicht (A) bewirkten elektrischen Widerstand der Carrier nicht wesentlich erniedrigt,
- A) a first layer consisting essentially of electrically insulating metal oxide and
- B) a second layer, consisting essentially of the metal oxide controlling the electrostatic charging of the toner, which does not significantly reduce the electrical resistance of the carriers caused by the layer (A),
Außerdem betrifft die Erfindung die Herstellung dieser Carrier sowie ihre Verwendung zur Herstellung von elektrophotographischen Zweikomponenten-Entwicklern.The invention also relates to the production of these carriers and their use for the production of two-component electrophotographic developers.
Zweikomponenten-Entwickler werden in elektrophotographischen Kopiergeräten und Laserdruckern zur Entwicklung eines elektrophotographisch erzeugten, latenten Bildes eingesetzt und bestehen üblicherweise aus Carrierteilchen und Tonerteilchen. Bei den Carrierteilchen handelt es sich um magnetisierbare Teilchen mit Größen von in der Regel 20 bis 1 000 µm. Die Tonerteilchen bestehen im wesentlichen aus einer farbgebenden Komponente und Bindemittel und sind etwa 5 bis 30 µm groß.Two-component developers are used in electrophotographic copiers and laser printers to develop an electrophotographically generated latent image and usually consist of carrier particles and toner particles. The carrier particles are magnetizable particles with sizes of generally 20 to 1000 μm. The toner particles consist essentially of a coloring component and binder and are about 5 to 30 microns in size.
Das elektrostatische, latente Bild wird beim Kopierprozeß durch selektive Belichtung einer elektrostatisch aufgeladenen Photoleiterwalze mit vom Original reflektiertem Licht erzeugt. Beim Laserdrucker geschieht dies durch einen Laserstrahl.The electrostatic, latent image is generated in the copying process by selective exposure of an electrostatically charged photoconductor roller with light reflected from the original. In the laser printer, this is done by a laser beam.
Zur Entwicklung des elektrostatischen Bildes werden Tonerteilchen über eine "Magnetbürste", das sind entlang der Feldlinien eines Sektormagneten ausgerichtete Carrierteilchen, zur Photoleiterwalze transportiert. Die Tonerteilchen haften dabei elektrostatisch an den Carrierteilchen und erhalten beim Transport im Magnetfeld durch Reibung eine den Carrierteilchen entgegengesetzte elektrostatische Aufladung. Die so von der Magnetbürste auf die Photoleiterwalze übertragenen Tonerteilchen ergeben ein "Tonerbild", das anschließend auf elektrostatisch aufgeladenes Papier übertragen und fixiert wird.To develop the electrostatic image, toner particles are transported to the photoconductor roller via a "magnetic brush", that is carrier particles aligned along the field lines of a sector magnet. The toner particles adhere electrostatically to the carrier particles and receive an electrostatic charge opposite to the carrier particles when they are transported in the magnetic field by friction. The toner particles thus transferred from the magnetic brush to the photoconductor roller result in a "toner image", which is then transferred to electrostatically charged paper and fixed.
An die verwendeten Carrierteilchen sind dabei eine Reihe von Anforderungen zu stellen: Sie sollen magnetisierbar sein und so einen schnellen Aufbau der Magnetbürste ermöglichen. Weiterhin soll ihre Oberfläche eine geringe Leitfähigkeit aufweisen, um einen Kurzschluß zwischen Sektormagnet und Photoleiterwalze zu verhindern. Diese Leitfähigkeit soll über lange Betriebszeiten des Carriers konstant bleiben, um auch die triboelektrische Aufladung des Entwicklers lange konstant zu halten. Nicht zuletzt sollen die Carrierteilchen auch fließfähig sein und nicht im Entwicklervorratsgefäß verklumpen.The carrier particles used have to meet a number of requirements: They should be magnetizable and thus enable the magnetic brush to be assembled quickly. Furthermore, their surface should have a low conductivity in order to prevent a short circuit between the sector magnet and the photoconductor roller. This conductivity should remain constant over long operating times of the carrier in order to keep the triboelectric charging of the developer constant for a long time. Last but not least, the carrier particles should also be flowable and not clump in the developer reservoir.
Um diesen Anforderungen zu genügen, müssen die aus magnetischem Material bestehenden Carrierteilchen in der Regel beschichtet werden.In order to meet these requirements, the carrier particles consisting of magnetic material generally have to be coated.
Aus der EP-A-303 918 und der DE-A-41 40 900 sind einfach metalloxidbeschichtete Carrier beschrieben, mit denen beliebige Toneraufladungen ermöglicht werden, wobei eine gleichzeitige Steuerung des elektrischen Widerstands der Carrier jedoch nicht möglich ist.From EP-A-303 918 and DE-A-41 40 900 simple metal oxide coated carriers are described, with which any toner charges are made possible, but a simultaneous control of the electrical resistance of the carriers is not possible.
In der älteren deutschen Patentanmeldung P 44 03 678.7 sind schließlich auch zweifach, mit einer Metall- und einer Metalloxidschicht belegte Carrier beschrieben, die geringe Widerstände von in der Regel 10³ bis 10⁸ Ohm aufweisen.Finally, the older German patent application P 44 03 678.7 also describes two carriers, coated with a metal and a metal oxide layer, which have low resistances of generally 10³ to 10⁸ ohms.
Carrier, die sowohl eine starke, insbesondere auch positive, Toneraufladung bewirken und gleichzeitig elektrisch isolierend wirken (d.h. Widerständ >10¹⁰ Ohm haben), sind jedoch noch nicht bekannt. Derartige Carrier sind vor allem für Bürokopierer und andere langsamer arbeitende Systeme von Interesse.Carriers that cause both strong, in particular positive, toner charging and at the same time have an electrically insulating effect (i.e. have resistances> 10¹⁰ ohms) are not yet known. Such carriers are of particular interest for office copiers and other slower-working systems.
Der Erfindung lag daher die Aufgabe zugrunde, Carrier für die Elektrophotographie bereitzustellen, welche diesem Eigenschaftsprofil entsprechen.The invention was therefore based on the object of providing carriers for electrophotography which correspond to this property profile.
Demgemäß wurden Carrier für die Elektrophotographie auf der Basis von mit verschiedenen Metalloxiden beschichteten magnetischen Kernen gefunden, die
- A) eine erste, im wesentlichen aus elektrisch isolierendem Metalloxid bestehende Schicht und
- B) eine zweite, im wesentlichen aus die elektrostatische Aufladung des Toners steuerndem Metalloxid bestehende Schicht, welche den durch die Schicht (A) bewirkten elektrischen Widerstand der Carrier nicht wesentlich erniedrigt,
- A) a first layer consisting essentially of electrically insulating metal oxide and
- B) a second layer, consisting essentially of the metal oxide controlling the electrostatic charging of the toner, which does not significantly reduce the electrical resistance of the carriers caused by the layer (A),
Außerdem wurde ein Verfahren zur Herstellung dieser Carrier gefunden, welches dadurch gekennzeichnet ist, daß man die Metalloxidschichten naßchemisch durch Hydrolyse von organischen Metallverbindungen, bei denen die organischen Reste über Sauerstoffatome an die Metalle gebunden sind, in Gegenwart eines organischen Lösungsmittels, in welchem die Metallverbindungen löslich sind, oder durch Gasphasenzersetzung flüchtiger Metallverbindungen in Gegenwart von Sauerstoff und/oder Wasserdampf auf die Carrierkerne aufbringt.In addition, a process for the production of these carriers has been found, which is characterized in that the metal oxide layers are wet-chemically by hydrolysis of organic metal compounds in which the organic radicals are bonded to the metals via oxygen atoms, in the presence of an organic solvent in which the metal compounds are soluble are, or by gas phase decomposition of volatile metal compounds in the presence of oxygen and / or water vapor onto the carrier cores.
Zusätzlich wurde ein Verfahren zur Herstellung von mit Aluminiumoxid beschichteten Carrierkernen gefunden, welches dadurch gekennzeichnet ist, daß man Aluminiumalkyle in der Gasphase in Gegenwart von Sauerstoff und bewegten Carrierkernen zersetzt.In addition, a process has been found for the production of carrier cores coated with aluminum oxide, which is characterized in that aluminum alkyls are decomposed in the gas phase in the presence of oxygen and moving carrier cores.
Weiterhin wurde die Verwendung dieser Carrier zur Herstellung von elektrophotographischen Zweikomponenten-Entwicklern gefunden.We have also found the use of these carriers for the production of two-component electrophotographic developers.
Die Kerne der erfindungsgemäßen Carrier können aus den üblichen weichmagnetischen Materialien wie Eisen, Stahl, Magnetit, Ferriten (beispielsweise Nickel/Zink-, Mangan/Zink- und Barium/Zinkferriten), Kobalt und Nickel oder aus hartmagnetischen Materialien wie BaFe₁₂O₁₉ oder SrFe₁₂O₁₉ bestehen und als kugelförmige oder unregelmäßig geformte Teilchen oder in Schwammform vorliegen. Weiterhin geeignet sind auch sog. Kompositcarrier, d.h., in Polymerharz eingebettete Teilchen dieser Metalle oder Metallverbindungen.The cores of the carriers according to the invention can consist of the usual soft magnetic materials such as iron, steel, magnetite, ferrites (for example nickel / zinc, manganese / zinc and barium / zinc ferrites), cobalt and nickel or of hard magnetic materials such as BaFe₁₂O₁₉ or SrFe₁₂O₁₉ and as spherical or irregularly shaped particles or in sponge form. So-called composite carriers, i.e. particles of these metals or metal compounds embedded in polymer resin, are also suitable.
Für die erste, elektrisch isolierend wirkende Metalloxidschicht (A) sind insbesondere Titandioxid, Aluminiumoxid, Eisenoxid und vor allem Siliciumdioxid sowie auch deren Mischungen geeignet.Titanium dioxide, aluminum oxide, iron oxide and above all silicon dioxide and also mixtures thereof are particularly suitable for the first metal oxide layer (A), which has an electrically insulating effect.
Die Dicke der Schicht (A) ist von der gewünschten Höhe des elektrischen Widerstands des Carriers abhängig und beträgt im allgemeinen 10 bis 500 nm, bevorzugt 30 bis 300 nm und besonders bevorzugt 50 bis 200 nm.The thickness of layer (A) depends on the desired level of electrical resistance of the carrier and is generally 10 to 500 nm, preferably 30 to 300 nm and particularly preferably 50 to 200 nm.
Für die zweite, die elektrostatische Aufladung des Toners steuernde Metalloxidschicht (B) sind eine starke positive Toneraufladung bewirkende Metalloxide wie Molybdänoxid, Wolframoxid und Zinndioxid besonders bevorzugt.For the second metal oxide layer (B) which controls the electrostatic charging of the toner, metal oxides such as molybdenum oxide, tungsten oxide and tin dioxide causing strong positive toner charging are particularly preferred.
In Abhängigkeit von der elektrischen Leitfähigkeit der verwendeten Metalloxide sollte die Schicht (B) mehr oder weniger dünn gewählt werden. Zu dicke leitfähige Schichten (B) setzen nämlich den durch die Schicht (A) bewirkten elektrischen Widerstand des Carriers wieder herab; geeignet sind insbesondere solche Schichten (B), die den Widerstand um nicht mehr als etwa 1,5 Zehnerpotenzen erniedrigen. In der Regel wird die Schicht (B) daher 1 bis 50 nm, vorzugsweise 2 bis 20 nm dick sein.Depending on the electrical conductivity of the metal oxides used, layer (B) should be chosen to be more or less thin. Conductive layers (B) that are too thick reduce the electrical resistance of the carrier caused by layer (A); those layers (B) which reduce the resistance by no more than about 1.5 powers of ten are particularly suitable. As a rule, the layer (B) will therefore be 1 to 50 nm, preferably 2 to 20 nm thick.
Bei dem erfindungsgemäßen Verfahren zur Herstellung der beschichteten Carrier werden die Metalloxidschichten entweder naßchemisch durch Hydrolyse von organischen Metallverbindungen, bei denen die organischen Reste über Sauerstoffatome an die Metalle gebunden sind, in Gegenwart eines organischen Lösungsmittels oder durch Gasphasenzersetzung von flüchtigen Metallverbindungen in Gegenwart von Sauerstoff und/oder Wasserdampf ("chemical vapor deposition", CVD) auf die Carrierkerne aufgebracht.In the process according to the invention for producing the coated carriers, the metal oxide layers are either wet-chemically by hydrolysis of organic metal compounds in which the organic radicals are bonded to the metals via oxygen atoms, in the presence of an organic solvent or by gas phase decomposition of volatile metal compounds in the presence of oxygen and / or chemical vapor deposition (CVD) is applied to the carrier cores.
Die naßchemische Verfahrensvariante ist insbesondere für die Beschichtung mit Silicumoxid geeignet. Selbstverständlich können aber auch die anderen Metalloxide durch Auffällen aus wäßrigen Lösungen oder aus Lösungen in organischen Lösungsmitteln aufgebracht werden.The wet chemical process variant is particularly suitable for coating with silicon oxide. Of course, the other metal oxides can also be applied by precipitation from aqueous solutions or from solutions in organic solvents.
Als organische Lösungsmittel eignen sich hierfür sowohl aprotische Lösungsmittel wie Ketone, β-Diketone, Ether, vor allem cyclische Ether, und stickstoffhaltige Lösungsmittel, z.B. amidische Lösungsmittel, als auch protische Lösungsmittel wie ein- oder mehrwertige Alkohole mit vorzugsweise 1 bis 6 Kohlenstoffatomen, die mit Wasser mischbar sind.Suitable organic solvents for this purpose are both aprotic solvents such as ketones, β-diketones, ethers, especially cyclic ethers, and nitrogen-containing solvents, e.g. amidic solvents, as well as protic solvents such as mono- or polyhydric alcohols, preferably having 1 to 6 carbon atoms, which are miscible with water.
Beispiele für bevorzugte Lösungsmittel sind Aceton, Tetrahydrofuran, Ethanol und n- und iso-Propanol sowie Diethylketon, Acetylaceton, Dioxan, Trioxan, Ethylenglykol, Propylenglykol, Glycerin, Dimethylformamid, Dimethylacetamid, N-Methylpyrrolidon, Pyridon und Acetonitril.Examples of preferred solvents are acetone, tetrahydrofuran, ethanol and n- and iso-propanol as well as diethyl ketone, acetylacetone, dioxane, trioxane, ethylene glycol, propylene glycol, glycerol, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, pyridone and acetonitrile.
Als metallhaltige Ausgangsverbindungen sind in den genannten organischen Lösungsmitteln lösliche organische Verbindungen, bei denen die organischen Reste über Sauerstoffatome an die Metalle gebunden sind, geeignet. Bevorzugte Beispiele sind die Acetylacetonate und insbesondere Alkoholate, vor allem C₁-C₄-Alkanolate, z.B. Tetraethoxysilan und Aluminiumtriisopropanolat.Suitable metal-containing starting compounds in the organic solvents mentioned are organic compounds in which the organic radicals are bonded to the metals via oxygen atoms. Preferred examples are the acetylacetonates and in particular alcoholates, especially C₁-C₄ alkanolates, for example tetraethoxysilane and aluminum triisopropanolate.
Die Hydrolyse wird vorzugsweise in Gegenwart einer Base oder einer Säure als Katalysator durchgeführt. Hierfür eignen sich z.B. neben Alkalilaugen wie Natronlauge insbesondere wäßrige Ammoniaklösungen. Geeignete saure Katalysatoren sind beispielsweise Phosphorsäure und organische Säuren wie Essigsäure und Oxalsäure.The hydrolysis is preferably carried out in the presence of a base or an acid as a catalyst. For this, e.g. in addition to alkali solutions such as sodium hydroxide solution, especially aqueous ammonia solutions. Suitable acidic catalysts are, for example, phosphoric acid and organic acids such as acetic acid and oxalic acid.
Wasser sollte mindestens in der stöchiometrisch für die Hydrolyse erforderliche Menge vorliegen, bevorzugt ist jedoch die 2- bis 100fache, insbesondere die 5- bis 20fache Menge.Water should be present at least in the stoichiometric amount required for the hydrolysis, but 2 to 100 times, in particular 5 to 20 times, is preferred.
Bezogen auf die eingesetzte Wassermenge, gibt man in der Regel 3 bis 40 Vol.-%, vorzugsweise 5 bis 30 Vol.-% einer 25 gew.-%igen wäßrigen Ammoniaklösung zu.Based on the amount of water used, 3 to 40% by volume, preferably 5 to 30% by volume, of a 25% by weight aqueous ammonia solution are generally added.
Für die Temperaturführung hat es sich als vorteilhaft erwiesen, das Reaktionsgemisch innerhalb von 10 bis 48 h schrittweise auf Rückflußtemperatur zu erhitzen. Bei Verwendung von Isopropanol als Lösungsmittel rührt man das Gemisch zum Beispiel bevorzugt zunächst 4 bis 20 h bei 40°C, dann 4 bis 20 h bei 60°C und zum Schluß 2 bis 8 h bei 80°C.For the temperature control, it has proven advantageous to gradually heat the reaction mixture to reflux temperature within 10 to 48 h. If isopropanol is used as the solvent, the mixture is preferably stirred, for example, first for 4 to 20 hours at 40 ° C., then for 4 to 20 hours at 60 ° C. and finally for 2 to 8 hours at 80 ° C.
Verfahrenstechnisch geht man zweckmäßigerweise wie folgt vor:
Man legt die Carrierkerne, organisches Lösungsmittel, Wasser und Base vor und gibt die zu hydrolysierende Metallverbindung, pur oder gelöst, z.B. als 30 bis 70, bevorzugt 40 bis 60 vol.-%ige Lösung im organischen Lösungsmittel, zu. Erfolgt die Zugabe der Metallverbindung in einem Schritt, dann wird die Suspension anschließend wie oben beschrieben unter Rühren erhitzt. Man kann die Metallverbindung aber auch bei erhöhter Temperatur kontinuierlich zudosieren, wobei das Wasser vorzugsweise nicht vorgelegt wird, sondern ebenfalls kontinuierlich zudosiert wird. Nach beendeter Beschichtung wird die Reaktionsmischung wieder auf Raumtemperatur abgekühlt.In terms of process engineering, it is expedient to proceed as follows:
The carrier cores, organic solvent, water and base are introduced and the metal compound to be hydrolyzed, pure or dissolved, for example as a 30 to 70, preferably 40 to 60,% by volume solution in the organic solvent. If the metal compound is added in one step, the suspension is then heated with stirring as described above. However, the metal compound can also be metered in continuously at elevated temperature, the water preferably not being initially introduced, but also metered in continuously. After the coating has ended, the reaction mixture is cooled again to room temperature.
Um eine Agglomeratbildung während des Beschichtungsvorgangs zu verhindern, kann die Suspension einer starken mechanischen Beanspruchung wie Pumpen, kräftigem Rühren oder Einwirken von Ultraschall unterzogen werden.In order to prevent agglomerate formation during the coating process, the suspension can be subjected to strong mechanical stress such as pumping, vigorous stirring or the action of ultrasound.
Gewünschtenfalls kann man den Beschichtungsschritt wiederholen, dies wird jedoch im allgemeinen nicht erforderlich sein. Sollte die Mutterlauge milchig trüb aussehen, so empfiehlt es sich, diese vor einer weiteren Beschichtung auszutauschen.The coating step can be repeated if desired, but this will generally not be necessary. If the mother liquor looks milky, it is advisable to replace it before applying another coating.
Die Isolierung der mit der Schicht (A) belegten Carrierkerne kann in einfacher Weise durch Abfiltrieren, Waschen mit organischem Lösungsmittel, vorzugsweise den auch als Lösungsmittel verwendeten Alkoholen, und anschließendes Trocknen (üblicherweise 1 bis 5 h bei 100 bis 250°C) erfolgen.The carrier cores coated with layer (A) can be isolated in a simple manner by filtration, washing with organic solvent, preferably the alcohols also used as solvent, and subsequent drying (usually 1 to 5 h at 100 to 250 ° C.).
Für die CVD-Verfahrensvariante sind als flüchtige Metallverbindungen insbesondere die Metallakoholate, Metallhalogenide, Metallcarbonyle und Metallorganyle geeignet.In particular, the metal alcoholates, metal halides, metal carbonyls and metal organyls are suitable as volatile metal compounds for the CVD process variant.
Als bevorzugte Verbindungen seien im einzelnen beispielhaft genannt:
Titanalkoholate, insbesondere Titantetraisopropanolat, auch Siliciumhalogenide wie Siliciumtetrachlorid, Eisencarbonyle, ins besondere Eisenpentacarbonyl, Molybdäncarbonyle, insbesondere Molybdänhexacarbonyl, auch Molybdänaryle wie Dibenzolmolybdän, Wolframcarbonyle, insbesondere Wolframhexacarbonyl, auch Wolframaryle wie Dibenzolwolfram, Zinnhalogenide, insbesondere Zinntetrachlorid, Zinnorganyle, insbesondere Zinntetrabutyl, Aluminiumalkyle, insbesondere -C₁-C₆-alkyle wie Aluminiumtrimethyl, -triethyl- und -triisobutyl.The following are examples of preferred compounds:
Titanium alcoholates, especially titanium tetraisopropanolate, also silicon halides such as silicon tetrachloride, iron carbonyls, especially iron pentacarbonyl, molybdenum carbonyls, especially molybdenum hexacarbonyl, also molybdenum aryls, especially dibenzene molybdenum, tungsten carbonyls, especially tungsten hexacarbonyl, in particular zirconium halide, such as zamfromhalohalogenol, such as C₁-C₆ alkyls such as aluminum trimethyl, triethyl and triisobutyl.
Wie bereits in der älteren deutschen Patentanmeldung P 44 03 679.5 beschrieben, sind als geeignete Zinnverbindungen vor allem auch Zinnorganyle zu nennen, die unter inerten Bedingungen im wesentlichen unzersetzt verdampfbar sind und sich in der Gasphase oxidativ, z.B. durch Reaktion mit Sauerstoff bzw. Luft oder anderen Sauerstoff/Inertgas-Gemischen, zu Zinndioxid zersetzen lassen, da sie eine besonders schonende Beschichtung der Carrierkerne ermöglichen.As already described in the older German patent application P 44 03 679.5, tin organyls should also be mentioned as suitable tin compounds, which are essentially non-decomposable under inert conditions and which are oxidative, e.g. can be decomposed to tin dioxide by reaction with oxygen or air or other oxygen / inert gas mixtures, since they enable a particularly gentle coating of the carrier cores.
Besonders geeignet sind vor allem Verbindungen der Formel SnR₄, in der die Reste R gleich oder verschieden sind und Alkyl, Alkenyl oder Aryl bedeuten, also z.B. Zinntetraalkyle, Zinntetraalkenyle und Zinntetraaryle sowie gemischte Zinarylalkyle und Zinnalkylalkenyle.Particularly suitable are especially compounds of the formula SnR₄ in which the radicals R are identical or different and are alkyl, alkenyl or aryl, e.g. Tin tetraalkyls, tin tetraalkenyls and tin tetraaryls as well as mixed binary binary alkyls and tin alkylalkenyls.
Auf die Zahl der Kohlenstoffatome in den Alkyl-, Alkenyl- und Arylresten kommt es im Prinzip nicht an, bevorzugt sind jedoch solche Verbindungen, die bei Temperaturen bis zu etwa 200°C einen ausreichend hohen Dampfdruck aufweisen, um eine einfache Verdampfung zu gewährleisten.In principle, the number of carbon atoms in the alkyl, alkenyl and aryl radicals is not important, but preference is given to those compounds which unite at temperatures up to about 200.degree have sufficiently high vapor pressure to ensure easy evaporation.
Dementsprechend sind bei Zinnorganylen mit 4 gleichen Resten R insbesondere C₁-C₆-, vor allem C₁-C₄-Alkylreste, C₂-C₆-Alkenyl-, vor allem Allylreste, und Phenylreste bevorzugt.Accordingly, in the case of tin organyls with 4 identical radicals R, in particular C₁-C₆, especially C₁-C₄ alkyl, C₂-C₆ alkenyl, especially allyl, and phenyl are preferred.
Schließlich können auch zwei- oder mehrkernige Zinnorganyle, die beispielsweise über Sauerstoffatome verbrückt sein können, eingesetzt werden.Finally, bi- or polynuclear tin organyls, which can be bridged, for example, via oxygen atoms, can also be used.
Als Beispiele für geeignete zinnorganische Verbindungen seien Zinndiallyldibutyl, Zinntetraamyl, Zinntetra-n-propyl, Bis(tri-n-butylzinn)oxid und vor allem Zinntetra-n-butyl und Zinntetramethyl genannt.Examples of suitable organotin compounds are tin diallyldibutyl, tin tetraamyl, tin tetra-n-propyl, bis (tri-n-butyltin) oxide and especially tin tetra-n-butyl and tin tetramethyl.
Die Zersetzungstemperaturen betragen für die Zinnorganyle in der Regel 200 bis 1 000°C, bevorzugt 300 bis 500°C.The decomposition temperatures for the tin organyls are generally 200 to 1000 ° C., preferably 300 to 500 ° C.
Die Temperatur und auch die Sauerstoffmenge werden zweckmäßigerweise so gewählt, daß die Oxidation der organischen Reste zu Kohlendioxid und Wasser vollständig ist und kein Kohlenstoff in die Zinndioxidschicht eingebaut wird. Wird nämlich weniger Sauerstoff eingeleitet als stöchiometrisch erforderlich ist, so wird in Abhängigkeit von der gewählten Temperatur entweder das Zinnorganyl nur teilweise zersetzt und kondensiert dann im Abgasbereich, oder es kommt zur Bildung von Ruß und anderen Zersetzungsprodukten.The temperature and also the amount of oxygen are expediently chosen so that the oxidation of the organic residues to carbon dioxide and water is complete and no carbon is incorporated into the tin dioxide layer. If less oxygen is introduced than is stoichiometrically required, depending on the temperature selected, either the tin organyl is only partially decomposed and then condenses in the exhaust gas area, or soot and other decomposition products are formed.
Weiterhin sollte der das Zinnorganyl enthaltende Verdampfergasstrom zweckmäßigerweise so eingestellt werden, daß das gasförmige Zinnorganyl nicht mehr als etwa 10 Vol.-% der Gesamtgasmenge im Reaktor ausmacht, um die Bildung von feinteiligem, partikulärem Zinndioxid zu vermeiden. Günstige Zinnorganylkonzentration im Trägerstrom selbst beträgt üblicherweise ≦ 5 Vol.-%.Furthermore, the evaporator gas stream containing the tin organyl should expediently be set so that the gaseous tin organyl does not make up more than about 10% by volume of the total amount of gas in the reactor in order to avoid the formation of finely divided, particulate tin dioxide. Favorable tin organyl concentration in the carrier stream itself is usually ≦ 5% by volume.
Die oxidative Zersetzung der Metallcarbonyle sowie der weiteren Metallorganyle zu den entsprechenden Metalloxiden erfolgt vorzugsweise ebenfalls mit Sauerstoff bzw. Luft oder anderen Sauerstoff/Inertgas-Gemischen. Hierfür sind im allgemeinen Reaktionstemperaturen von 100 bis 400°C geeignet. Der Zersetzung der Aluminiumalkyle wird in der Regel bei 200 bis 1000°C, vorzugsweise 300 bis 500°C durchgeführt.The oxidative decomposition of the metal carbonyls and the further metal organyls to give the corresponding metal oxides is preferably likewise carried out using oxygen or air or other oxygen / inert gas mixtures. Reaction temperatures of 100 to 400 ° C. are generally suitable for this. The decomposition of the aluminum alkyl is usually carried out at 200 to 1000 ° C, preferably 300 to 500 ° C.
Die Hydrolyse der Metallhalogenide oder -alkoholate mit Wasserdampf zur Bildung der Metalloxide wird üblicherweise bei 100 bis 600°C vorgenommen, wobei die Halogenide in der Regel die höheren Temperaturen erfordern.The hydrolysis of the metal halides or alcoholates with steam to form the metal oxides is usually carried out at 100 to 600 ° C., the halides generally requiring the higher temperatures.
Als Reaktoren eignen sich für die Gasphasenbeschichtung feststehende oder sich drehende Rohre oder bewegte Mischaggregate, in denen sich ein bewegtes Festbett oder eine Wirbelschicht der zu beschichtenden Carrierkerne befindet. Die Bewegung der Carrierkerne kann durch Fluidisierung mit einem Gasstrom, durch Freifallmischung, durch Schwerkrafteinwirkung oder mit Hilfe von Rührorganen im Reaktor erfolgen.Suitable reactors for gas phase coating are fixed or rotating tubes or moving mixing units in which there is a moving fixed bed or a fluidized bed of the carrier cores to be coated. The movement of the carrier cores can take place by fluidization with a gas stream, by free-fall mixing, by the action of gravity or with the aid of stirring elements in the reactor.
Bei der CVD-Beschichtung sollte die Konzentration der verdampften Metallverbindung (sowie der Reaktionsgase) im Trägergas vorzugsweise ≦ 5 Vol.-% betragen, um eine gleichmäßige Beschichtung des Carriers zu gewährleisten. Die Verdampfungsraten und die Reaktionstemperaturen sollten, wie bereits oben für die Zinnorganyle beschrieben, ebenfalls so gewählt werden, daß eine möglichst vollständige Umsetzung stattfindet und kein feinteiliges Metalloxid gebildet wird, das mit dem Abgasstrom ausgetragen würde. Weitere Einzelheiten können der DE-A-41 40 900 entnommen werden.With the CVD coating, the concentration of the vaporized metal compound (as well as the reaction gases) in the carrier gas should preferably be ≦ 5% by volume in order to ensure a uniform coating of the carrier. The evaporation rates and the reaction temperatures should, as already described above for the tin organyls, also be chosen so that the most complete possible conversion takes place and no fine-particle metal oxide is formed which would be discharged with the exhaust gas stream. Further details can be found in DE-A-41 40 900.
Die Dicke der gebildeten Schichten hängt naturgemäß von der zugeführten Menge an Metallverbindung ab und kann damit über die Beschichtungsdauer gesteuert werden. Es können sowohl sehr dünne als auch sehr dicke Schichten aufgebracht werden.The thickness of the layers formed naturally depends on the amount of metal compound supplied and can thus be controlled over the duration of the coating. Both very thin and very thick layers can be applied.
Die erfindungsgemäßen Carrier zeichnen sich durch die hohe Qualität der aufgebrachten Metalloxidschichten (homogen, filmartig und abrasionsfest) aus und weisen einen im gewünschten Bereich von > 10¹⁰ Ohm liegenden Widerstand auf, wirken also elektrisch isolierend.The carriers according to the invention are notable for the high quality of the metal oxide layers applied (homogeneous, film-like and abrasion-resistant) and have a resistance in the desired range of> 10 11 ohms, that is to say they have an electrically insulating effect.
Außerdem haben sie hohe Lebensdauern und können daher insgesamt vorteilhaft mit den handelsüblichen Tonern zur Herstellung von elektrophotographischen Zweikomponenten-Entwicklern eingesetzt werden, wobei die sich durch hohe positive Toneraufladungen auszeichnenden, mit Molybdän-, Wolfram- und/oder Zinnoxid beschichteten Carrier besonders hervorgehoben werden sollen.In addition, they have long lifetimes and can therefore be used overall advantageously with the commercially available toners for the production of electrophotographic two-component developers, the carriers which are distinguished by high positive toner charges and are coated with molybdenum, tungsten and / or tin oxide being particularly emphasized.
Zu einer Suspension von 4,5 kg eines Ferritcarriers (Barium/Zinkferrit, Teilchengröße 45 bis 105 µm, Typ KBN 100 der Fa. Hitachi, Japan) in 2250 ml Isopropanol wurden 180 ml einer 25 gew.-%igen wäßrigen Ammoniaklösung gegeben. Nach Erhitzen der Mischung auf 40°C wurden 720 ml (669,6 g) Tetraethoxysilan in 10 min zugetropft.180 ml of a 25% strength by weight aqueous ammonia solution were added to a suspension of 4.5 kg of a ferrite carrier (barium / zinc ferrite, particle size 45 to 105 μm, type KBN 100 from Hitachi, Japan) in 2250 ml of isopropanol. After the mixture had been heated to 40 ° C., 720 ml (669.6 g) of tetraethoxysilane were added dropwise in the course of 10 minutes.
Nach weiterem, vierstündigem Rühren bei 40°C und jeweils einstündigem Rühren bei 60°C und 80°C wurde die überstehende milchig trübe flüssige Phase abdekantiert. Der mit SiO₂ bzw. SiO₂-Hydraten beschichtete Carrier wurde dreimal mit 1500 ml Isopropanol gewaschen, abfiltriert und 1 h bei 100°C getrocknet.After stirring for a further four hours at 40 ° C. and stirring for one hour at 60 ° C. and 80 ° C., the supernatant, milky, cloudy liquid phase was decanted off. The carrier coated with SiO₂ or SiO₂ hydrates was washed three times with 1500 ml of isopropanol, filtered off and dried at 100 ° C. for 1 h.
Mittels Atomabsorptionsspektroskopie wurde ein Siliciumgehalt von 0,42 Gew.-% ermittelt.A silicon content of 0.42% by weight was determined by means of atomic absorption spectroscopy.
Anschließend wurden 4 kg des SiO₂-beschichteten Carriers in einem elektrisch beheizten Wirbelschichtreaktor (150 mm Innendurchmesser, 130 cm Höhe, mit Zyklon und Carrierrückführung) unter Fluidisierung mit insgesamt 1800 l/h Stickstoff auf 230°C aufgeheizt.Then 4 kg of the SiO₂-coated carrier in an electrically heated fluidized bed reactor (150 mm inner diameter, 130 cm high, with cyclone and carrier return) were heated to 230 ° C. with fluidization using a total of 1800 l / h of nitrogen.
13,2 g Molybdänhexacarbonyl wurden mit Hilfe eines Stickstoffstroms von 400 l/h Stickstoff aus einem auf 50°C erhitzten, vorgeschalteten Verdampfergefäß in 3 h in den Reaktor überführt.13.2 g of molybdenum hexacarbonyl were transferred into the reactor in 3 hours with the aid of a nitrogen stream of 400 l / h of nitrogen from an upstream evaporator vessel heated to 50 ° C.
Gleichzeitig wurden 400 l/h Luft zur Oxidation über das Wirbelgas in den Reaktor geleitet.At the same time, 400 l / h of air were passed into the reactor for oxidation via the fluidizing gas.
Nach Abschluß der Molybdänoxidbeschichtung wurde der Carrier unter weiterem Fluidisieren mit Stickstoff auf Raumtemperatur abgekühlt.After completion of the molybdenum oxide coating, the carrier was cooled to room temperature with further fluidization with nitrogen.
Mittels Atomabsorptionsspektroskopie wurde ein Molybdängehalt von 0,08 Gew.-% ermittelt.A molybdenum content of 0.08% by weight was determined by means of atomic absorption spectroscopy.
Zur Untersuchung des beschichteten Carriers wurde dessen elektrischer Widerstand sowie die elektrostatische Aufladbarkeit eines Toners bestimmt.To examine the coated carrier, its electrical resistance and the electrostatic chargeability of a toner were determined.
Der elektrische Widerstand des Carriers wurde mit dem C-Meter von PES-Laboratorium (Dr. R. Epping, Neufahrn) gemessen. Dazu wurden die Carrierteilchen 30 s in einem Magnetfeld von 600 Gauß bei einer Spannung Uo von 10 V bewegt. Die Kapazität C betrug dabei 1 nF.The electrical resistance of the carrier was measured with the C-meter from the PES laboratory (Dr. R. Epping, Neufahrn). The carrier particles were subjected to this for 30 s in a magnetic field of 600 gauss a voltage U o of 10 V. The capacitance C was 1 nF.
Der Widerstand R kann nach der folgenden Formel aus dem zeitlichen spannungsabfall nach dem Abstellen des angelegten elektrischen Feldes berechnet werden:
- R:
- Widerstand [Ohm];
- t:
- Zeit der Messung [s];
- C:
- Kapazität [F];
- Uo:
- Spannung zu Beginn der Messung [V];
- U:
- Spannung am Ende der Messung [V].
- R:
- Resistance [ohm];
- t:
- Time of measurement [s];
- C:
- Capacity [F];
- U o :
- Voltage at the beginning of the measurement [V];
- U:
- Voltage at the end of the measurement [V].
Der Widerstand R wird dabei normalerweise in logarithmierten Werten angegeben (log R [log Ohm]).The resistance R is usually specified in logarithmic values (log R [log ohms]).
Zur Bestimmung der elektrostatischen Aufladbarkeit wurde der Carrier mit einem für kommerzielle Laserdrucker geeigneten Polyesterharztoner (vernetztes Furmarsäure/propoxliertes Bisphenol A-Harz mit einer mittleren Teilchengröße von 11 µm und einer Teilchengrößenverteilung von 6 bis 17 µm)im Gewichtsverhältnis 97 : 3 gemischt und zur Aktivierung in einem 30 ml Glasgefäß 10 min in einem Taumelmischer bei 200 U/min durchmischt.To determine the electrostatic chargeability, the carrier was mixed with a polyester resin toner suitable for commercial laser printers (crosslinked fumaric acid / propoxylated bisphenol A resin with an average particle size of 11 μm and a particle size distribution of 6 to 17 μm) in a weight ratio of 97: 3 and for activation in mixed in a 30 ml glass vessel for 10 minutes in a tumble mixer at 200 rpm.
2,5 g des so hergestellten Entwicklers wurden in eine mit einem Elektrometer gekoppelte Hard-blow-off-Zelle (Q/M-Meter von PES-Laboratorium, Dr. R. Epping, Neufahrn), in die Siebe der Maschenweite 32 µm eingesetzt waren, eingewogen. Durch Ausblasen mit einem kräftigen Luftstrom (ca. 3000 cm³/min) und gleichzeitiges Absaugen wurde das Tonerpulver nahezu vollständig entfernt, während die Carrierteilchen durch die Siebe in der Meßzelle zurückgehalten wurden.2.5 g of the developer thus produced were placed in a hard blow-off cell coupled to an electrometer (Q / M meter from the PES laboratory, Dr. R. Epping, Neufahrn), into the sieves with a mesh size of 32 μm were weighed in. The toner powder was almost completely removed by blowing out with a strong air flow (approx. 3000 cm³ / min) and simultaneously sucking off, while the carrier particles were retained in the measuring cell by the sieves.
Dann wurde die durch Ladungstrennung entstandene Spannung am Elektrometer abgelesen und daraus die Aufladung des Carriers ermittelt (
Bei diesen Untersuchungen wurden folgende Ergebnisse erhalten:
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4409966 | 1994-03-23 | ||
DE4409966A DE4409966A1 (en) | 1994-03-23 | 1994-03-23 | Carrier coated twice with metal oxide for electrophotography |
Publications (2)
Publication Number | Publication Date |
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EP0674238A2 true EP0674238A2 (en) | 1995-09-27 |
EP0674238A3 EP0674238A3 (en) | 1996-07-17 |
Family
ID=6513583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95103638A Withdrawn EP0674238A3 (en) | 1994-03-23 | 1995-03-14 | Carrier for electrophotography having a double metaloxide coating. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5534378A (en) |
EP (1) | EP0674238A3 (en) |
JP (1) | JPH07271105A (en) |
BR (1) | BR9501138A (en) |
CA (1) | CA2144894A1 (en) |
DE (1) | DE4409966A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1156376A1 (en) * | 2000-05-17 | 2001-11-21 | Heidelberger Druckmaschinen Aktiengesellschaft | Magnetic carrier particles |
US6723481B2 (en) | 2000-05-17 | 2004-04-20 | Heidelberger Druckmaschinen Ag | Method for using hard magnetic carriers in an electrographic process |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5795692A (en) * | 1997-03-31 | 1998-08-18 | Xerox Corporation | Carrier composition and processes thereof |
WO2003027771A1 (en) * | 2001-09-28 | 2003-04-03 | Höganäs Ab | Electrophotographic carrier core magnetite powder |
US20040211531A1 (en) * | 2003-04-28 | 2004-10-28 | Dybdahl Shawn D. | Thermal solar screen and method of assembly thereof |
JP5307407B2 (en) * | 2008-01-11 | 2013-10-02 | オリンパス株式会社 | Endoscope apparatus and program |
JP5263654B2 (en) * | 2008-03-21 | 2013-08-14 | 日立金属株式会社 | Method for forming silica coating of soft magnetic powder for dust core and method for producing dust core |
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GB2001447A (en) * | 1977-07-05 | 1979-01-31 | Konishiroku Photo Ind | Developing material for electrophotography process for preparation thereof and image-forming method |
JPS60227266A (en) * | 1984-04-25 | 1985-11-12 | Fuji Elelctrochem Co Ltd | Ferrite carrier material for electrostatic copying |
US4675089A (en) * | 1985-11-25 | 1987-06-23 | At&T Technologies, Inc. | Low temperature deposition method for high quality aluminum oxide films |
JPS63271473A (en) * | 1987-04-30 | 1988-11-09 | Konica Corp | Developer for negative charge latent image |
EP0303918A2 (en) * | 1987-08-17 | 1989-02-22 | BASF Aktiengesellschaft | Carrier for copying systems and manufacturing process thereof |
WO1993012470A1 (en) * | 1991-12-12 | 1993-06-24 | Basf Aktiengesellschaft | Particles suitable for use as carrier particles in electrophotography |
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JPS61188548A (en) * | 1985-02-16 | 1986-08-22 | Konishiroku Photo Ind Co Ltd | Electrostatic charge image developing carrier |
CA1330869C (en) * | 1986-09-03 | 1994-07-26 | Kouichi Nagata | Magnetic carrier used for developer |
JPH0283A (en) * | 1987-10-29 | 1990-01-05 | Kawasaki Steel Corp | Carrier for dry two-component developer |
DE3831091A1 (en) * | 1988-09-13 | 1990-03-29 | Basf Ag | OXIDE COATED CARRIER, A METHOD FOR PRODUCING THIS CARRIER AND THEIR USE |
EP0492665B1 (en) * | 1990-12-28 | 1998-06-03 | Kyocera Corporation | Electrophotographic electroconductive magnetic carrier, developer using the same and image formation method |
US5478687A (en) * | 1993-03-08 | 1995-12-26 | Konica Corporation | Carrier for negatively chargeable developer |
-
1994
- 1994-03-23 DE DE4409966A patent/DE4409966A1/en not_active Withdrawn
-
1995
- 1995-03-14 EP EP95103638A patent/EP0674238A3/en not_active Withdrawn
- 1995-03-17 CA CA002144894A patent/CA2144894A1/en not_active Abandoned
- 1995-03-20 BR BR9501138A patent/BR9501138A/en not_active Application Discontinuation
- 1995-03-23 JP JP7064563A patent/JPH07271105A/en not_active Withdrawn
- 1995-03-23 US US08/408,987 patent/US5534378A/en not_active Expired - Fee Related
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GB2001447A (en) * | 1977-07-05 | 1979-01-31 | Konishiroku Photo Ind | Developing material for electrophotography process for preparation thereof and image-forming method |
JPS60227266A (en) * | 1984-04-25 | 1985-11-12 | Fuji Elelctrochem Co Ltd | Ferrite carrier material for electrostatic copying |
US4675089A (en) * | 1985-11-25 | 1987-06-23 | At&T Technologies, Inc. | Low temperature deposition method for high quality aluminum oxide films |
JPS63271473A (en) * | 1987-04-30 | 1988-11-09 | Konica Corp | Developer for negative charge latent image |
EP0303918A2 (en) * | 1987-08-17 | 1989-02-22 | BASF Aktiengesellschaft | Carrier for copying systems and manufacturing process thereof |
WO1993012470A1 (en) * | 1991-12-12 | 1993-06-24 | Basf Aktiengesellschaft | Particles suitable for use as carrier particles in electrophotography |
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Title |
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DATABASE WPI Section Ch, Week 8551, Derwent Publications Ltd., London, GB; Class G06, AN 1985-321777 & JP 60 227266 A (FUJI) 12 November 1985 * |
JOURNAL 0F APPLIED PHYSICS, Bd. 54, Nr. 9, 1. - 30.September 1983 NEW YORK US, Seiten 5436-5440, K.P.PANDE 'Plasma enhanced metal-organic chemical vapor deposition of aluminumoxide dielectric film for device applications' * |
PATENT ABSTRACTS OF JAPAN Bd. 013, Nr. 089 (P-836) 02 März 1989 & JP 63 271473 A (KONICA) 09 November 1988 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1156376A1 (en) * | 2000-05-17 | 2001-11-21 | Heidelberger Druckmaschinen Aktiengesellschaft | Magnetic carrier particles |
US6723481B2 (en) | 2000-05-17 | 2004-04-20 | Heidelberger Druckmaschinen Ag | Method for using hard magnetic carriers in an electrographic process |
Also Published As
Publication number | Publication date |
---|---|
CA2144894A1 (en) | 1995-09-24 |
JPH07271105A (en) | 1995-10-20 |
EP0674238A3 (en) | 1996-07-17 |
US5534378A (en) | 1996-07-09 |
DE4409966A1 (en) | 1995-09-28 |
BR9501138A (en) | 1996-06-04 |
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