EP0461990A1 - Micropoint cathode electron source - Google Patents

Micropoint cathode electron source Download PDF

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Publication number
EP0461990A1
EP0461990A1 EP91401536A EP91401536A EP0461990A1 EP 0461990 A1 EP0461990 A1 EP 0461990A1 EP 91401536 A EP91401536 A EP 91401536A EP 91401536 A EP91401536 A EP 91401536A EP 0461990 A1 EP0461990 A1 EP 0461990A1
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Prior art keywords
electron source
resistive layer
source according
microtips
cathode
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EP91401536A
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German (de)
French (fr)
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EP0461990B1 (en
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Robert Meyer
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • the subject of the present invention is a source of electrons with microtip emissive cathodes and its manufacturing process. It applies in particular to the production of flat display screens.
  • French patents 2,593,953 and 2,623,013 disclose cathodoluminescence display devices excited by field emission, comprising an electron source with emissive cathodes with microtips.
  • FIG. 1 schematically represents a known source of electrons with microtip emissive cathodes described in detail in the aforementioned document No. 2,623,013.
  • This source has a matrix structure and optionally comprises on a substrate 2, for example made of glass, a thin layer of silica 4.
  • a substrate 2 for example made of glass
  • a thin layer of silica 4 On this layer of silica 4 are formed a plurality of electrodes 5 in the form of parallel conductive strips playing the role of cathodic conductors and constituting the columns of the matrix structure.
  • the cathode conductors are each covered by a resistive layer 7 which can be continuous (except on the ends to allow the connection of the cathode conductors with polarization means 20).
  • Electrodes 10 are formed above the insulating layer 8 in the form of parallel conductive strips. These electrodes 10 are perpendicular to the electrodes 5 and play the role of grids which constitute the lines of the matrix structure.
  • the known source also includes a plurality of elementary electron emitters (microtips), a copy of which is schematically represented in FIG. 2: in each of the crossing zones of the cathode conductors 5 and of the grids 10, the resistive layer 7 corresponding to this zone supports microtips 12, for example made of molybdenum, and the grid 10 corresponding to said zone has an opening 14 facing each of the microtips.
  • microtips elementary electron emitters
  • the resistive layer 7 corresponding to this zone supports microtips 12, for example made of molybdenum
  • the grid 10 corresponding to said zone has an opening 14 facing each of the microtips.
  • Each of the latter substantially matches the shape of a cone, the base of which rests on layer 7 and the top of which is located at the corresponding opening 14.
  • the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.
  • the main purpose of the resistive layer 7 is to limit the current in each emitter 12 and therefore, therefore, to homogenize the electronic emission. This allows, in an application to excite the bright spots (pixels) of a display screen, to eliminate too bright spots.
  • the resistive layer 7 also makes it possible to reduce the risks of breakdown at the level of the microtips 12 due to the current limitation and thus to avoid the appearance of short-circuits between lines and columns.
  • the resistive layer 7 is supposed to authorize the short-circuit of some transmitters 12 with a grid 10, the very limited leakage current (of the order of a few ⁇ A) in these short-circuits not having to disturb the functioning of the rest of the cathode conductor.
  • the problem posed by the appearance of short circuits between microtips and a grid is not satisfactorily resolved by a device of the type described in French patent No. 2,623,013.
  • FIG 3 there is shown schematically a microtip.
  • a metallic particle 16 causes a short-circuit of the microtip 12 with a grid 10; in this case, all the voltage applied between gate 10 and cathode conductor 5 (Vcg, of the order of 100 V) is transferred to the terminals of the resistive layer 7.
  • Vcg voltage applied between gate 10 and cathode conductor 5
  • the resistive layer 7 To be able to tolerate some short-circuits of this type, which are almost inevitable due to the very large number of microtips, the resistive layer 7 must be able to withstand a voltage of around 100 V, which requires that its thickness be greater than 2 ⁇ m. Otherwise, it slams by thermal effect and a short circuit can appear between the grid and the cathode conductor making the electron source unusable.
  • the present invention overcomes this drawback. Its aim is to improve the breakdown resistance of an electron source with microtip emissive cathodes, this improvement being obtained without increasing the thickness of the resistive source.
  • the invention recommends the use of electrodes (for example, the conductors cathodic) in a lattice shape so that these electrodes and the associated resistive layers are substantially in the same plane.
  • the breakdown resistance no longer depends (at first order) on the thickness of the resistive layer but on the distance between the cathode conductor and the microtip. It therefore suffices to maintain a sufficient distance between the cathode conductor and the microtip to avoid breakdown while retaining a homogenization effect for which the resistive layer is provided.
  • Each of the electrodes of at least one of the series has a lattice structure in contact with a resistive layer.
  • the electrodes having a lattice structure are metallic; they are for example in AI, Mo, Cr, Nb or other. It therefore has better conductivity.
  • the dimension of a mesh of the trellis is less than the dimension of a crossing zone.
  • a crossing zone covers several meshes of the trellis.
  • the mesh of the trellis can have any shape; they can for example be rectangular or square.
  • the meshes of the trellis are square.
  • the cathode conductors have a lattice structure.
  • the microtips occupy the central regions of the mesh of the lattice. This arrangement makes it possible to provide a sufficient distance between a cathode conductor and the microtips to avoid breakdown.
  • each cathode conductor is covered by a resistive layer.
  • a resistive layer is interposed between the insulating support and each cathode conductor.
  • the resistive layer can be made of a material such as indium oxide, tin oxide or iron oxide.
  • the resistive layer is made of doped silicon.
  • This resistivity is generally greater than 102 ⁇ cm while the resistivity of the cathode conductor is generally less than 10 ⁇ 3 ⁇ cm.
  • the grids have a lattice structure.
  • the cathode conductors may or may not have a lattice structure.
  • the resistive layer is no longer necessary, it can however be present to maintain a homogenization effect.
  • each grid is covered by a second resistive layer pierced with openings facing the microtips.
  • each grid rests on a second resistive layer pierced with openings facing the microtips.
  • the resistive layer can be made of a material such as indium oxide, tin oxide or iron oxide.
  • the resistive layer is made of doped silicon.
  • resistivity suited to the effects of homogenization and protection against short circuits. This resistivity is generally greater than 102 ⁇ cm while the resistivity of the cathode conductor is generally less than 10 ⁇ 3 ⁇ cm.
  • the meshes of the lattices are preferably of the same dimensions opposite.
  • the cathode conductors 5 have a lattice structure.
  • the meshes of the trellis can be of any geometry. In the embodiment shown, the meshes of the trellis are square.
  • the pitch of the mesh p is, for example, about 50 micrometers and the width d of the conductive tracks forming the lattice is for example about 5 micrometers.
  • These conductive tracks are preferably metallic, for example Al, Mo, Cr, Nb or other.
  • a cathode conductor 5 has a width of 400 micrometers, the cathode conductors being separated from each other by a distance equal to approximately 50 micrometers.
  • a crossover zone of a cathode conductor 5 with a grid 10 covers several meshes of the lattice. Under these conditions, each overlap area of a cathode conductor 5 with a grid 10 comprises 48 meshes. The non-operation of a mesh due to short circuits between the grid 10 and microtips only disturbs the assembly in the proportion of 1/48, which has no significant effect.
  • the microtips 12 are united in the central areas of the meshes and are connected to the cathode conductor 5 by a resistive layer 7 made of doped silicon for example.
  • the distance a separating each microtip 12 can be 5 micrometers for example; the distance r between the microtips 12 of the conductive tracks of the lattice forming a cathode conductor 5 must be sufficient for the voltage drop in the resistive layer 7, nominal, in operation to produce the aforementioned homogenization effect.
  • the resistive layer 7 of doped silicon being approximately 0.5 micrometer for example, this distance r is at least 5 micrometers for a voltage drop of between 5 and 10 V in nominal operation. For example, the distance r is chosen equal to 10 micrometers.
  • n 36.
  • the access resistance of the cathode conductor 5 to all of the microtips 12 is not very dependent on the size of the mesh and the number of microtips it contains. It essentially depends on the resistivity and the thickness of the resistive layer 7.
  • the resistivity p is of the order of 3 103 Ohmscm; its thickness e is for example equal to 0.5 micrometer.
  • the current of leakage in a mesh is substantially equal to 10 microamps, which is tolerable because it does not alter the functioning of the electron source.
  • the microtips are only produced inside the meshes. A positioning of the microtips relative to the mesh of the cathode conductors is therefore necessary with an accuracy of the order of ⁇ 5 micrometers.
  • the cathode conductors 5 having a lattice structure rest on a resistive layer 7.
  • a resistive layer 7 is therefore interposed between the insulating support (more particularly the layer 4) and each cathode conductor 5.
  • a second resistive layer 18 for example made of doped silicon with a resistivity of approximately 104 Ohmscm and a thickness equal to 0.4 micrometer, rests on the insulating layer 8. It is pierced with openings 20 to allow passage of the microtips 12.
  • the grids 10a in the form of a square mesh lattice rest on the second resistive layer 18.
  • the microtips 12 are placed inside the central area of the lattice meshes.
  • the second resistive layer 18 covers the grids 10b which rest on the insulating layer 8.
  • the grids can be made of Nb and have a thickness of 0.2 micrometer.
  • the width of each grid 10a or 10b can be 5 micrometers for a mesh pitch of 50 micrometers.
  • the second resistive layer 18 has a protective role against short circuits, the resistive layer 7 ensuring the function of homogenization of the electronic emission.
  • the resistive layers 7 can be doped silicon having for example a resistivity of 105 Ohmscm and a thickness of 0.1 micrometer.
  • the cathode conductors 5 can for example be made of ITO (indium oxide doped with tin).
  • the grids and the cathode conductors have a lattice structure with square meshes.
  • the meshes of the grids and the cathode conductors are then superimposed: the conductive tracks forming the meshes of the grids and the cathode conductors are opposite in the overlap zones.
  • a second resistive layer 18 covers each grid 10b or the grids 10a can also cover the second resistive layer 10a.
  • cathode conductors these can be covered by the insulating layer 7 (cathode conductor reference 5b) or else cover it (cathode conductor reference 5a).
  • an electron source having lattice-shaped electrodes makes it possible to reduce the risks of breakdown while ensuring good homogenization of the electronic emission.
  • the lattice structure makes it possible to increase the access resistance of the microtips to the cathode conductors without increasing the thickness of the resistive layer.

Abstract

Source d'électrons à cathodes (12) émissives à micropointes possédant des électrodes en forme de treillis ; ces électrodes peuvent être soit les conducteurs cathodiques (5), soit les grilles (10).Application à l'excitation d'écran de visualisation.A microtip emissive cathode electron source (12) having lattice-shaped electrodes; these electrodes can be either the cathode conductors (5) or the grids (10). Application to the display screen excitation.

Description

La présente invention a pour objet une source d'électrons à cathodes émissives à micropointes et son procédé de fabrication. Elle s'applique notamment à la réalisation d'écrans plats de visualisation.The subject of the present invention is a source of electrons with microtip emissive cathodes and its manufacturing process. It applies in particular to the production of flat display screens.

On connaît, par les brevets français n° 2 593 953 et 2 623 013, des dispositifs de visualisation par cathodoluminescence excitée par émission de champ, comprenant une source d'électrons à cathodes émissives à micropointes.French patents 2,593,953 and 2,623,013 disclose cathodoluminescence display devices excited by field emission, comprising an electron source with emissive cathodes with microtips.

La figure 1 représente schématiquement une source connue d'électrons à cathodes émissives à micropointes décrite en détails dans le document n° 2 623 013 précité. Cette source a une structure matricielle et comprend éventuellement sur un substrat 2, par exemple en verre, une mince couche de silice 4. Sur cette couche de silice 4 sont formées une pluralité d'électrodes 5 en forme de bandes conductrices parallèles jouant le rôle de conducteurs cathodiques et constituant les colonnes de la structure matricielle.FIG. 1 schematically represents a known source of electrons with microtip emissive cathodes described in detail in the aforementioned document No. 2,623,013. This source has a matrix structure and optionally comprises on a substrate 2, for example made of glass, a thin layer of silica 4. On this layer of silica 4 are formed a plurality of electrodes 5 in the form of parallel conductive strips playing the role of cathodic conductors and constituting the columns of the matrix structure.

Les conducteurs cathodiques sont recouverts chacun par une couche résistive 7 qui peut être continue (excepté sur les extrémités pour permettre la connexion des conducteurs cathodiques avec des moyens de polarisation 20).The cathode conductors are each covered by a resistive layer 7 which can be continuous (except on the ends to allow the connection of the cathode conductors with polarization means 20).

Une couche électriquement isolante 8, en silice, recouvre les couches résistives 7.An electrically insulating layer 8, made of silica, covers the resistive layers 7.

Au-dessus de la couche isolante 8 sont formées une pluralité d'électrodes 10 également en forme de bandes conductrices parallèles. Ces électrodes 10 sont perpendiculaires aux électrodes 5 et jouent le rôle de grilles qui constituent les lignes de la structure matricielle.Above the insulating layer 8 are formed a plurality of electrodes 10 also in the form of parallel conductive strips. These electrodes 10 are perpendicular to the electrodes 5 and play the role of grids which constitute the lines of the matrix structure.

La source connue comporte également une pluralité d'émetteurs élémentaires d'électrons (micropointes) dont un exemplaire est schématiquement représenté sur la figure 2 : dans chacune des zones de croisement des conducteurs cathodiques 5 et des grilles 10, la couche résistive 7 correspondant à cette zone supporte des micropointes 12 par exemple en molybdène et la grille 10 correspondant à ladite zone comporte une ouverture 14 en regard de chacune des micropointes 12. Chacune de ces dernières épouse sensiblement la forme d'un cône dont la base repose sur la couche 7 et dont le sommet est situé au niveau de l'ouverture 14 correspondante. Bien entendu, la couche isolante 8 est également pourvue d'ouvertures 15 permettant le passage des micropointes 12.The known source also includes a plurality of elementary electron emitters (microtips), a copy of which is schematically represented in FIG. 2: in each of the crossing zones of the cathode conductors 5 and of the grids 10, the resistive layer 7 corresponding to this zone supports microtips 12, for example made of molybdenum, and the grid 10 corresponding to said zone has an opening 14 facing each of the microtips. Each of the latter substantially matches the shape of a cone, the base of which rests on layer 7 and the top of which is located at the corresponding opening 14. Of course, the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.

A titre indicatif, on peut citer les ordres de grandeurs suivants :

  • épaisseur de la couche isolante 8 : 1 micromètre,
  • épaisseur d'une grille 10 : 0,4 micromètre,
  • diamètre d'une ouverture 14 : 1,4 micromètre,
  • diamètre d'une basse d'une micropointe 12 : 1,1 micromètre,
  • épaisseur d'un conducteur cathodique 5 : 0,2 micromètre,
  • épaisseur d'une couche résistive : 0,5 micromètre.
As an indication, the following orders of magnitude can be cited:
  • thickness of the insulating layer 8: 1 micrometer,
  • thickness of a grid 10: 0.4 micrometer,
  • diameter of an opening 14: 1.4 micrometer,
  • diameter of a bass of a microtip 12: 1.1 micrometer,
  • thickness of a cathode conductor 5: 0.2 micrometer,
  • thickness of a resistive layer: 0.5 micrometer.

La couche résistive 7 a pour but essentiel de limiter le courant dans chaque émetteur 12 et donc, par conséquent, d'homogénéiser l'émission électronique. Cela permet, dans une application à l'excitation des points lumineux (pixels) d'un écran d'affichage, d'éliminer les points trop brillants.The main purpose of the resistive layer 7 is to limit the current in each emitter 12 and therefore, therefore, to homogenize the electronic emission. This allows, in an application to excite the bright spots (pixels) of a display screen, to eliminate too bright spots.

La couche résistive 7 permet aussi de réduire les risques de claquage au niveau des micropointes 12 du fait de la limitation en courant et ainsi d'éviter l'apparition de courts-circuits entre lignes et colonnes.The resistive layer 7 also makes it possible to reduce the risks of breakdown at the level of the microtips 12 due to the current limitation and thus to avoid the appearance of short-circuits between lines and columns.

Enfin, la couche résistive 7 est sensée autoriser le court-circuit de quelques émetteurs 12 avec une grille 10, le courant de fuite très limité (de l'ordre de quelques µA) dans ces courts-circuits ne devant pas perturber le fonctionnement du reste du conducteur cathodique. Malheureusement, le problème pose par l'apparition de courts-circuits entre des micropointes et une grille n'est pas résolu de façon satisfaisante par un dispositif du type de celui décrit dans le brevet français n° 2 623 013.Finally, the resistive layer 7 is supposed to authorize the short-circuit of some transmitters 12 with a grid 10, the very limited leakage current (of the order of a few μA) in these short-circuits not having to disturb the functioning of the rest of the cathode conductor. Unfortunately, the problem posed by the appearance of short circuits between microtips and a grid is not satisfactorily resolved by a device of the type described in French patent No. 2,623,013.

Sur la figure 3, on a représenté schématiquement une micropointe. Une particule métallique 16 provoque un court-circuit de la micropointe 12 avec une grille 10 ; dans ce cas, toute la tension appliquée entre grille 10 et conducteur cathodique 5 (Vcg, de l'ordre de 100 V) est reportée aux bornes de la couche résistive 7.In Figure 3, there is shown schematically a microtip. A metallic particle 16 causes a short-circuit of the microtip 12 with a grid 10; in this case, all the voltage applied between gate 10 and cathode conductor 5 (Vcg, of the order of 100 V) is transferred to the terminals of the resistive layer 7.

Pour pouvoir tolérer quelques courts-circuits de ce type, quasiment inévitables du fait du très grand nombre de micropointes, la couche résistive 7 doit pouvoir supporter une tension avoisinant 100 V, ce qui nécessite que son épaisseur soit supérieure à 2 µm. Dans le cas contraire, elle claque par effet thermique et un court-circuit franc peut apparaître entre la grille et le conducteur cathodique rendant la source d'électrons inutilisable.To be able to tolerate some short-circuits of this type, which are almost inevitable due to the very large number of microtips, the resistive layer 7 must be able to withstand a voltage of around 100 V, which requires that its thickness be greater than 2 μm. Otherwise, it slams by thermal effect and a short circuit can appear between the grid and the cathode conductor making the electron source unusable.

La présente invention pallie cet inconvénient. Elle a pour but l'amélioration de la résistance au claquage d'une source d'électrons à cathodes émissives à micropointes, cette amélioration étant obtenue sans pour autant augmenter l'épaisseur de la source résistive.The present invention overcomes this drawback. Its aim is to improve the breakdown resistance of an electron source with microtip emissive cathodes, this improvement being obtained without increasing the thickness of the resistive source.

Pour atteindre ce but, l'invention préconise d'utiliser des électrodes (par exemple, les conducteurs cathodiques) en forme de treillis de manière à ce que ces electrodes et les couches résistives associées soient sensiblement dans le même plan. Dans cette configuration, la résistance au claquage ne dépend plus (au premier ordre) de l'épaisseur de la couche résistive mais de la distance entre le conducteur cathodique et la micropointe. Il suffit donc de maintenir un éloignement suffisant entre le conducteur cathodique et la micropointe pour éviter le claquage tout en conservant un effet d'homogénéïsation pour lequel la couche résistive est prévue.To achieve this goal, the invention recommends the use of electrodes (for example, the conductors cathodic) in a lattice shape so that these electrodes and the associated resistive layers are substantially in the same plane. In this configuration, the breakdown resistance no longer depends (at first order) on the thickness of the resistive layer but on the distance between the cathode conductor and the microtip. It therefore suffices to maintain a sufficient distance between the cathode conductor and the microtip to avoid breakdown while retaining a homogenization effect for which the resistive layer is provided.

De façon plus précise, la présente invention concerne une source d'électrons comprenant :

  • sur un support isolant,une première série d'électrodes parallèles jouant le rôle de conducteurs cathodiques et portant une pluralité de micropointes en matériau émetteur d'électrons,
  • une seconde série d'électrodes parallèles, jouant le rôle de grilles, électriquement isolées des conducteurs cathodiques et faisant un angle avec ceux-ci, ce qui définit des zones de croisement des conducteurs cathodiques et des grilles, les grilles étant percées d'ouvertures respectivement en regard des micropointes.
More specifically, the present invention relates to an electron source comprising:
  • on an insulating support, a first series of parallel electrodes acting as cathode conductors and carrying a plurality of microtips made of electron emitting material,
  • a second series of parallel electrodes, playing the role of grids, electrically isolated from the cathode conductors and making an angle with them, which defines zones of intersection of the cathode conductors and the grids, the grids being pierced with openings respectively next to the microtips.

Chacune des électrodes d'au moins une des séries possède une structure en treillis en contact avec une couche résistive.Each of the electrodes of at least one of the series has a lattice structure in contact with a resistive layer.

De manière préférée, les électrodes possédant une structure en treillis sont métalliques ; elles sont par exemple en AI, Mo, Cr, Nb ou autre. Elle présente ainsi une meilleure conductivité.Preferably, the electrodes having a lattice structure are metallic; they are for example in AI, Mo, Cr, Nb or other. It therefore has better conductivity.

De manière préférée, la dimension d'une maille du treillis est inférieure à la dimension d'une zone de croisement.Preferably, the dimension of a mesh of the trellis is less than the dimension of a crossing zone.

Avantageusement, une zone de croisement recouvre plusieurs mailles du treillis.Advantageously, a crossing zone covers several meshes of the trellis.

Cela favorise le fonctionnement de la source d'électrons pour deux raisons :

  • a) le courant nominal par maille est d'autant plus faible que le nombre de mailles est important. Lorsque les conducteurs cathodiques présentent une structure en treillis, la résistance d'accès d'un conducteur cathodique à l'ensemble des micropointes d'une maille peut être tolérée d'autant plus grande que le nombre de mailles est important, ce qui permet de réduire le courant de fuite en cas de court-circuit. En effet, la résistance d'accès est peu dépendante de la dimension de la maille et du nombre de micropointes par maille. Elle dépend principalement de la résistivité et de l'épaisseur de la couche résistive.
  • b) Plus le nombre de mailles est grand à l'intérieur d'une zone de recouvrement, moins le non-fonctionnement (court-circuit) d'une maille perturbe le fonctionnement de la source d'électrons. (Dans le cas d'une application à l'excitation d'un écran, seule une fraction d'un pixel est éteint pour une maille défaillante, ce qui n'est pas visible sur l'écran).
This promotes the functioning of the electron source for two reasons:
  • a) the nominal current per mesh is lower the greater the number of meshes. When the cathode conductors have a lattice structure, the access resistance of a cathode conductor to all of the microtips of a mesh can be tolerated the greater the greater the number of meshes, which makes it possible to reduce the leakage current in the event of a short circuit. Indeed, the access resistance is not very dependent on the dimension of the mesh and the number of microtips per mesh. It mainly depends on the resistivity and the thickness of the resistive layer.
  • b) The greater the number of cells inside an overlap zone, the less the non-functioning (short circuit) of a cell disturbs the operation of the electron source. (In the case of an application to the excitation of a screen, only a fraction of a pixel is extinguished for a faulty mesh, which is not visible on the screen).

Les mailles du treillis peuvent avoir une forme quelconque ; elles peuvent être par exemple rectangulaires ou carrées.The mesh of the trellis can have any shape; they can for example be rectangular or square.

Selon un mode de réalisation préféré, les mailles du treillis sont carrées.According to a preferred embodiment, the meshes of the trellis are square.

Selon une variante de réalisation, les conducteurs cathodiques présentent une structure en treillis.According to an alternative embodiment, the cathode conductors have a lattice structure.

Dans ce cas, avantageusement, les micropointes occupent les régions centrales des mailles du treillis. Cette disposition permet de ménager une distance suffisante entre un conducteur cathodique et les micropointes pour éviter le claquage.In this case, advantageously, the microtips occupy the central regions of the mesh of the lattice. This arrangement makes it possible to provide a sufficient distance between a cathode conductor and the microtips to avoid breakdown.

Selon un mode de réalisation particulier de cette variante, chaque conducteur cathodique est recouvert par une couche résistive.According to a particular embodiment of this variant, each cathode conductor is covered by a resistive layer.

Selon un autre mode de réalisation particulier de cette variante, une couche résistive est intercalée entre le support isolant et chaque conducteur cathodique.According to another particular embodiment of this variant, a resistive layer is interposed between the insulating support and each cathode conductor.

La couche résistive peut être constituée en matériau tels que l'oxyde d'indium, l'oxyde d'étain ou l'oxyde de fer. De manière préférée, la couche résistive est en silicium dopé.The resistive layer can be made of a material such as indium oxide, tin oxide or iron oxide. Preferably, the resistive layer is made of doped silicon.

Quel que soit le matériau choisi, il faut s'assurer que celui-ci présente bien une résistivite adaptée aux effets d'homogénéïsation et de protection contre les courts-circuits. Cette résistivite est généralement supérieure à 10² Ωcm alors que la résistivite du conducteur cathodique est généralement inférieure à 10⁻³ Ωcm.Whatever the material chosen, you must ensure that it has a resistivity adapted to the effects of homogenization and protection against short-circuits. This resistivity is generally greater than 10² Ωcm while the resistivity of the cathode conductor is generally less than 10⁻³ Ωcm.

Dans une autre variante de réalisation, les grilles possèdent une structure en treillis. Dans ce cas, les conducteurs cathodiques peuvent avoir ou non une structure en treillis. La couche résistive n'est plus nécéssaire, elle peut cependant être présente pour conserver un effet d'homogénéïsation.In another alternative embodiment, the grids have a lattice structure. In this case, the cathode conductors may or may not have a lattice structure. The resistive layer is no longer necessary, it can however be present to maintain a homogenization effect.

Dans un mode de réalisation de cette variante, chaque grille est recouverte par une seconde couche résistive percée d'ouvertures en regard des micropointes.In one embodiment of this variant, each grid is covered by a second resistive layer pierced with openings facing the microtips.

Dans un autre mode de réalisation de cette variante, chaque grille repose sur une seconde couche résistive percée d'ouvertures en regard des micropointes.In another embodiment of this variant, each grid rests on a second resistive layer pierced with openings facing the microtips.

La couche résistive peut être constituée en matériau tels que l'oxyde d'indium, l'oxyde d'étain ou l'oxyde de fer. De manière préférée, la couche résistive est en silicium dopé.The resistive layer can be made of a material such as indium oxide, tin oxide or iron oxide. Preferably, the resistive layer is made of doped silicon.

Quel que soit le matériau choisi, il faut s'assurer que celui-ci présente bien une résistivité adaptée aux effets d'homogénéïsation et de protection contre les courts-circuits. Cette résistivité est généralement supérieure à 10² Ωcm alors que la résistivité du conducteur cathodique est généralement inférieure à 10⁻³ Ω cm.Whatever the material chosen, it must be ensured that it has a resistivity suited to the effects of homogenization and protection against short circuits. This resistivity is generally greater than 10² Ωcm while the resistivity of the cathode conductor is generally less than 10⁻³ Ω cm.

Si les grilles et les conducteurs cathodiques possèdent tous une structure en treillis, les mailles des treillis sont préférentiellement de mêmes dimensions en vis-à-vis.If the grids and the cathode conductors all have a lattice structure, the meshes of the lattices are preferably of the same dimensions opposite.

Les caractéristiques et avantages de l'invention apparaîtront mieux après la description qui suit donnée à titre explicatif et nullement limitatif. Cette description se réfère à des dessins annexes sur lesquels :

  • la figure 1, déjà décrite et relative à l'art antérieur, représente schématiquement une source d'électrons à cathodes émissives à micropointes ;
  • la figure 2, déjà décrite et relative à l'art antérieur, représente schématiquement une vue en coupe et partielle d'une source d'électrons à cathodes émissives à micropointes ;
  • la figure 3, déjà décrite et relative à l'art antérieur, représente schématiquement un émetteur d'électrons en court-circuit avec une grille ;
  • la figure 4 est une vue schématique en coupe et partielle d'un premier mode de réalisation d'une source d'électrons conforme à l'invention ;
  • la figure 5 est une vue schématique de dessus et partielle de la réalisation de la figure 4 ;
  • la figure 6 est une vue schématique d'un autre mode de réalisation de l'invention ;
  • la figure 7 est une vue schématique d'un autre mode de réalisation de l'invention ;
  • la figure 8 est une vue schématique d'un autre mode de réalisation de l'invention.
The characteristics and advantages of the invention will appear better after the description which follows, given by way of explanation and in no way limiting. This description refers to annexed drawings in which:
  • FIG. 1, already described and relating to the prior art, schematically represents a source of electrons with emissive cathodes with microtips;
  • FIG. 2, already described and relating to the prior art, schematically represents a sectional and partial view of a source of electrons with emissive cathodes with microtips;
  • FIG. 3, already described and relating to the prior art, schematically represents an electron emitter in short circuit with a grid;
  • Figure 4 is a schematic sectional and partial view of a first embodiment of an electron source according to the invention;
  • Figure 5 is a schematic top view and partial of the embodiment of Figure 4;
  • Figure 6 is a schematic view of another embodiment of the invention;
  • Figure 7 is a schematic view of another embodiment of the invention;
  • Figure 8 is a schematic view of another embodiment of the invention.

En référence aux figures 4 et 5, on décrit maintenant une source d'électrons conforme à l'invention. Dans cette réalisation, les conducteurs cathodiques 5 présentent une structure en treillis. Les mailles du treillis peuvent être de géométrie quelconque. Dans la réalisation représentée, les mailles du treillis sont carrées. Le pas de la maille p est, par exemple, d'environ 50 micromètres et la largeur d des pistes conductrices formant le treillis est par exemple d'environ 5 micromètres. Ces pistes conductrices sont de préférence métalliques, par exemple en Al, Mo, Cr, Nb ou autre. Un conducteur cathodique 5 présente une largeur de 400 micromètres, les conducteurs cathodiques étant séparés les uns des autres d'une distance égale à 50 micromètres environ. On comprend donc qu'une zone de croisement d'un conducteur cathodique 5 avec une grille 10 (de largeur égale à 300 micromètres) recouvre plusieurs mailles du treillis. Dans ces conditions, chaque zone de recouvrement d'un conducteur cathodique 5 avec une grille 10 comprend 48 mailles. Le non fonctionnement d'une maille dû à des courts-circuits entre la grille 10 et des micropointes ne perturbe l'ensemble que dans la proportion de 1/48, ce qui n'a pas d'effet notable.Referring to Figures 4 and 5, we now describe an electron source according to the invention. In this embodiment, the cathode conductors 5 have a lattice structure. The meshes of the trellis can be of any geometry. In the embodiment shown, the meshes of the trellis are square. The pitch of the mesh p is, for example, about 50 micrometers and the width d of the conductive tracks forming the lattice is for example about 5 micrometers. These conductive tracks are preferably metallic, for example Al, Mo, Cr, Nb or other. A cathode conductor 5 has a width of 400 micrometers, the cathode conductors being separated from each other by a distance equal to approximately 50 micrometers. It is therefore understood that a crossover zone of a cathode conductor 5 with a grid 10 (of width equal to 300 micrometers) covers several meshes of the lattice. Under these conditions, each overlap area of a cathode conductor 5 with a grid 10 comprises 48 meshes. The non-operation of a mesh due to short circuits between the grid 10 and microtips only disturbs the assembly in the proportion of 1/48, which has no significant effect.

Les micropointes 12 sont réunies dans les zones centrales des mailles et sont reliées au conducteur cathodique 5 par une couche résistive 7 en silicium dope par exemple. La distance a séparant chaque micropointe 12 peut être de 5 micromètres par exemple ; la distance r séparant les micropointes 12 des pistes conductrices du treillis formant un conducteur cathodique 5 doit être suffisante pour que la chute de tension dans la couche résistive 7, nominal, en fonctionnement produise l'effet d'homogénéisation précité. La couche résistive 7 en silicium dope étant d'environ 0,5 micromètre par exemple, cette distance r est au minimum de 5 micromètres pour une chute de tension comprise entre 5 et 10 V en fonctionnement nominal. Par exemple, la distance r est choisie égale à 10 micromètres.The microtips 12 are united in the central areas of the meshes and are connected to the cathode conductor 5 by a resistive layer 7 made of doped silicon for example. The distance a separating each microtip 12 can be 5 micrometers for example; the distance r between the microtips 12 of the conductive tracks of the lattice forming a cathode conductor 5 must be sufficient for the voltage drop in the resistive layer 7, nominal, in operation to produce the aforementioned homogenization effect. The resistive layer 7 of doped silicon being approximately 0.5 micrometer for example, this distance r is at least 5 micrometers for a voltage drop of between 5 and 10 V in nominal operation. For example, the distance r is chosen equal to 10 micrometers.

Chaque maille contient un nombre n de micropointes 12 avec n = ((p - d - 2r)/a + 1)².

Figure imgb0001
Each mesh contains a number n of microtips 12 with n = ((p - d - 2r) / a + 1) ².
Figure imgb0001

Dans l'exemple represente, n égale 36.In the example shown, n equals 36.

Dans cette réalisation, la résistance d'accés du conducteur cathodique 5 à l'ensemble des micropointes 12 est peu dépendante de la dimension de la maille et du nombre de micropointes qu'elle contient. Elle dépend essentiellement de la résistivite et de l'épaisseur de la couche résistive 7. Pour une couche résistive en silicium, la résistivité p est de l'ordre de 3 10³ Ohmscm ; son épaisseur e est par exemple égale à 0,5 micromètre.In this embodiment, the access resistance of the cathode conductor 5 to all of the microtips 12 is not very dependent on the size of the mesh and the number of microtips it contains. It essentially depends on the resistivity and the thickness of the resistive layer 7. For a resistive silicon layer, the resistivity p is of the order of 3 10³ Ohmscm; its thickness e is for example equal to 0.5 micrometer.

La résistance d'accès R peut être approximativement calculée à l'aide de la formule : R = P 2 π e ;

Figure imgb0002
on trouve que R égale approximativement 10⁷ Ohms, ce qui est suffisant pour obtenir une chute de tension d'environ 10 V dans la couche résistive 7.The access resistance R can be roughly calculated using the formula: R = P 2 π e ;
Figure imgb0002
 we find that R equals approximately 10⁷ Ohms, which is sufficient to obtain a voltage drop of approximately 10 V in the resistive layer 7.

Dans ces conditions, en cas de court-circuit entre un émetteur 12 et la grille 10, le courant de fuite dans une maille est sensiblement égal à 10 microampères, ce qui est tolérable car il n'altère pas le fonctionnement de la source d'électrons.Under these conditions, in the event of a short circuit between a transmitter 12 and the grid 10, the current of leakage in a mesh is substantially equal to 10 microamps, which is tolerable because it does not alter the functioning of the electron source.

Un procédé de réalisation d'un tel dispositif peut par exemple comporter les étapes suivantes :

  • a) sur un substrat isolant 2, par exemple en verre, recouvert une fine couche 4 (d'épaisseur 1000 Å) de SiO₂, on dépose, par exemple par pulvérisation cathodique une couche métallique (d'épaisseur 2000 Å) par exemple en Nb ;
  • b) on réalise, par exemple par photolithographie et gravure ionique réactive, une structure en treillis dans la couche métallique. Cette structure est donc réalisée sur toute la surface active la source d'électrons ;
  • c) on dépose, par exemple par pulvérisation cathodique, une couche résistive de silicium dope (d'épaisseur 5000 Å) ;
  • d) on grave, par exemple par photogravure et gravure ionique réactive, la couche résistive et la couche métallique de manière à former des colonnes conductrices (par exemple, de largeur égale à 400 micromètres et espacées de 50 micromètres entre-elles) ;
  • e) on termine ensuite la source d'électrons par la réalisation d'une couche isolante, de la grille et des micropointes selon des étapes décrites par exemple dans le brevet français n° 2 593 953 déposé au nom du demandeur.
A method of producing such a device can for example include the following steps:
  • a) on an insulating substrate 2, for example made of glass, covered with a thin layer 4 (of thickness 1000 Å) of SiO₂, a metallic layer (of thickness 2000 Å), for example made of Nb, is deposited, for example by sputtering ;
  • b) a lattice structure in the metal layer is produced, for example by photolithography and reactive ion etching. This structure is therefore produced over the entire active surface of the electron source;
  • c) a resistive layer of doped silicon (of thickness 5000 Å) is deposited, for example by cathode sputtering;
  • d) the resistive layer and the metal layer are etched, for example by photogravure and reactive ion etching, so as to form conductive columns (for example, of width equal to 400 micrometers and spaced 50 micrometers apart);
  • e) the electron source is then terminated by producing an insulating layer, the grid and the microtips according to steps described for example in French patent No. 2,593,953 filed in the name of the applicant.

Conformément à l'invention, les micropointes ne sont réalisées qu'à l'intérieur des mailles. Un positionnement des micropointes par rapport aux mailles des conducteurs cathodiques est donc nécessaire avec une précision de l'ordre de ± 5 micromètres.According to the invention, the microtips are only produced inside the meshes. A positioning of the microtips relative to the mesh of the cathode conductors is therefore necessary with an accuracy of the order of ± 5 micrometers.

Selon un autre mode de réalisation représenté schématiquement sur la figure 6, les conducteurs cathodiques 5 possédant une structure en treillis reposent sur une couche résistive 7. Dans cette configuration, une couche résistive 7 est donc intercalée entre le support isolant (plus particulièrement la couche 4) et chaque conducteur cathodique 5.According to another embodiment shown schematically in FIG. 6, the cathode conductors 5 having a lattice structure rest on a resistive layer 7. In this configuration, a resistive layer 7 is therefore interposed between the insulating support (more particularly the layer 4) and each cathode conductor 5.

Selon une variante de réalisation représentée en coupe sur la figure 7, ce ne sont plus les conducteurs cathodiques 5 qui possèdent une structure en treillis mais les grilles.According to an alternative embodiment shown in section in FIG. 7, it is no longer the cathode conductors 5 which have a lattice structure but the grids.

Selon un premier mode de réalisation, une seconde couche résistive 18, par exemple en silicium dopé d'une résistivité d'environ 10⁴ Ohmscm et d'épaisseur égale à 0,4 micromètre, repose sur la couche isolante 8. Elle est percée d'ouvertures 20 pour permettre le passage des micropointes 12.According to a first embodiment, a second resistive layer 18, for example made of doped silicon with a resistivity of approximately 10⁴ Ohmscm and a thickness equal to 0.4 micrometer, rests on the insulating layer 8. It is pierced with openings 20 to allow passage of the microtips 12.

Les grilles 10a en forme de treillis à mailles carrées reposent sur la seconde couche résistive 18. Les micropointes 12 sont placées à l'intérieur de la zone centrale des mailles du treillis.The grids 10a in the form of a square mesh lattice rest on the second resistive layer 18. The microtips 12 are placed inside the central area of the lattice meshes.

Selon un second mode de réalisation, la seconde couche résistive 18 recouvre les grilles 10b qui reposent sur la couche isolante 8.According to a second embodiment, the second resistive layer 18 covers the grids 10b which rest on the insulating layer 8.

Dans cette variante de réalisation, les grilles peuvent être en Nb et présentent une épaissseur de 0,2 micromètre. La largeur de chaque grille 10a ou 10b peut être de 5 micromètres pour un pas de maille de 50 micromètres.In this alternative embodiment, the grids can be made of Nb and have a thickness of 0.2 micrometer. The width of each grid 10a or 10b can be 5 micrometers for a mesh pitch of 50 micrometers.

Que ce soit dans le premier ou le second mode de réalisation, la seconde couche résistive 18 a un rôle de protection contre les courts-circuits, la couche résistive 7 assurant la fonction d'homogénéïsation de l'émission électronique.Whether in the first or second embodiment, the second resistive layer 18 has a protective role against short circuits, the resistive layer 7 ensuring the function of homogenization of the electronic emission.

Dans cette variante de réalisation, les couches résistives 7 peuvent être en silicium dopé ayant par exemple une résistivité de 10⁵ Ohmscm et une épaisseur de 0,1 micromètre. Les conducteurs cathodiques 5 peuvent être par exemple en I T O (oxyde d'indium dopé à l'étain).In this variant embodiment, the resistive layers 7 can be doped silicon having for example a resistivity of 10⁵ Ohmscm and a thickness of 0.1 micrometer. The cathode conductors 5 can for example be made of ITO (indium oxide doped with tin).

Selon une autre variante de réalisation, représentée schématiquement en coupe sur la figure 8, les grilles et les conducteurs cathodiques possèdent une structure en treillis à mailles carrées. Les mailles des grilles et des conducteurs cathodiques sont alors superposées : les pistes conductrices formant les mailles des grilles et des conducteurs cathodiques sont en regard dans les zones de recouvrement.According to another alternative embodiment, shown diagrammatically in section in FIG. 8, the grids and the cathode conductors have a lattice structure with square meshes. The meshes of the grids and the cathode conductors are then superimposed: the conductive tracks forming the meshes of the grids and the cathode conductors are opposite in the overlap zones.

De même que précédemment, une seconde couche résistive 18 recouvre chaque grille 10b ou bien les grilles 10a peuvent aussi recouvrir la seconde couche résistive 10a.As before, a second resistive layer 18 covers each grid 10b or the grids 10a can also cover the second resistive layer 10a.

En ce qui concerne les conducteurs cathodiques, ceux-ci peuvent être recouverts par la couche isolante 7 (conducteur cathodique référence 5b) ou bien la recouvrir (conducteur cathodique référence 5a).As regards the cathode conductors, these can be covered by the insulating layer 7 (cathode conductor reference 5b) or else cover it (cathode conductor reference 5a).

Quelle que soit la variante de réalisation retenue, une source d'électrons possédant des électrodes en forme de treillis permet de diminuer les risques de claquage tout en assurant une bonne homogénéïsation de l'émission électronique. La structure en treillis permet d'augmenter la résistance d'accès des micropointes aux conducteurs cathodiques sans pour autant augmenter l'épaisseur de la couche résistive.Whatever the alternative embodiment chosen, an electron source having lattice-shaped electrodes makes it possible to reduce the risks of breakdown while ensuring good homogenization of the electronic emission. The lattice structure makes it possible to increase the access resistance of the microtips to the cathode conductors without increasing the thickness of the resistive layer.

Claims (13)

Source d'électrons comprenant : - sur un support isolant (2, 4) une première série d'électrodes parallèles jouant le rôle de conducteurs cathodiques et portant une pluralité de micropointes (12) en matériau émetteur d'électrons, - une seconde série d'électrodes parallèles (10), jouant le rôle de grilles, électriquement isolées des conducteurs cathodiques (5) et faisant un angle avec ceux-ci, ce qui définit des zones de croisement des conducteurs cathodiques (5) et des grilles (10), les grilles (10) étant percées d'ouvertures (14) respectivement en regard des micropointes (12) ; caractérisée en ce que chacune des électrodes (5, 10) d'au moins une des séries possède une structure en treillis en contact avec une couche résistive (7, 18).Electron source including: - on an insulating support (2, 4) a first series of parallel electrodes acting as cathode conductors and carrying a plurality of microtips (12) made of electron emitting material, - a second series of parallel electrodes (10), playing the role of grids, electrically isolated from the cathode conductors (5) and making an angle with them, which defines crossing zones of the cathode conductors (5) and grids (10), the grids (10) being pierced with openings (14) respectively opposite the microtips (12); characterized in that each of the electrodes (5, 10) of at least one of the series has a lattice structure in contact with a resistive layer (7, 18). Source d'électrons selon la revendication 1, caractérisée en ce que la dimension d'une maille du treillis est inférieure à la dimension d'une zone de croisement.Electron source according to claim 1, characterized in that the dimension of a mesh of the trellis is less than the dimension of a crossing zone. Source d'électrons selon la revendication 2, caractérisée en ce qu'une zone de croisement recouvre plusieurs mailles du treilis.Electron source according to claim 2, characterized in that a crossing zone covers several meshes of the treilis. Source d'électrons selon la revendication 1, caractérisée en ce que les mailles du treillis sont carrées.Electron source according to claim 1, characterized in that the meshes of the lattice are square. Source d'électrons selon la revendication 1, caractérisée par le fait que les conducteurs cathodiques (5) possèdent une structure en treillis.Electron source according to claim 1, characterized in that the cathode conductors (5) have a lattice structure. Source d'électrons selon la revendication 5, caractérisée en ce que les micropointes (12) occupent les régions centrales des mailles du treillis.Electron source according to claim 5, characterized in that the microtips (12) occupy the central regions of the mesh of the lattice. Source d'électrons selon la revendication 5, caractérisée en ce que chaque conducteur cathodique (5) est recouvert par une couche résistive (7).Electron source according to claim 5, characterized in that each cathode conductor (5) is covered by a resistive layer (7). Source d'électrons selon la revendication 5, caractérisée en ce qu'une couche résistive (7) est intercalée entre le support isolant (2, 4)et chaque conducteur cathodique (5).Electron source according to claim 5, characterized in that a resistive layer (7) is interposed between the insulating support (2, 4) and each cathode conductor (5). Source d'électrons selon l'une quelconque des revendications 7 ou 8, caractérisée en ce que la couche résistive (7) est en silicium dopé.Electron source according to either of Claims 7 and 8, characterized in that the resistive layer (7) is made of doped silicon. Source d'électrons selon la revendication 1, caractérisée par le fait que les grilles (10) possèdent une structure en treillis.Electron source according to claim 1, characterized in that the grids (10) have a lattice structure. Source d'électrons selon la revendication 10, caractérisée par le fait que chaque grille (10) est recouverte par une seconde couche résistive (18) percée d'ouvertures (20) en regard des micropointes (12).Electron source according to claim 10, characterized in that each grid (10) is covered by a second resistive layer (18) pierced with openings (20) facing the microtips (12). Source d'électrons selon la revendication 10, caractérisée par le fait que chaque grille (10) repose sur une seconde couche résistive (18) percée d'ouvertures (20) en regard des micropointes (12).Electron source according to claim 10, characterized in that each grid (10) rests on a second resistive layer (18) pierced with openings (20) opposite the microtips (12). Source d'électrons selon l'une quelconque des revendications 11 ou 12, caractérisée en ce que la seconde couche résistive (18) est en silicium dopé.Electron source according to any one of claims 11 or 12, characterized in that the second resistive layer (18) is made of doped silicon.
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