DE9421671U1 - Discharge chamber for a plasma etching system in semiconductor production - Google Patents

Discharge chamber for a plasma etching system in semiconductor production

Info

Publication number
DE9421671U1
DE9421671U1 DE9421671U DE9421671U DE9421671U1 DE 9421671 U1 DE9421671 U1 DE 9421671U1 DE 9421671 U DE9421671 U DE 9421671U DE 9421671 U DE9421671 U DE 9421671U DE 9421671 U1 DE9421671 U1 DE 9421671U1
Authority
DE
Germany
Prior art keywords
plasma etching
discharge chamber
etching system
semiconductor production
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9421671U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE9421671U priority Critical patent/DE9421671U1/en
Publication of DE9421671U1 publication Critical patent/DE9421671U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
DE9421671U 1994-08-26 1994-08-26 Discharge chamber for a plasma etching system in semiconductor production Expired - Lifetime DE9421671U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE9421671U DE9421671U1 (en) 1994-08-26 1994-08-26 Discharge chamber for a plasma etching system in semiconductor production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4430385 1994-08-26
DE9421671U DE9421671U1 (en) 1994-08-26 1994-08-26 Discharge chamber for a plasma etching system in semiconductor production

Publications (1)

Publication Number Publication Date
DE9421671U1 true DE9421671U1 (en) 1996-07-11

Family

ID=25939560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9421671U Expired - Lifetime DE9421671U1 (en) 1994-08-26 1994-08-26 Discharge chamber for a plasma etching system in semiconductor production

Country Status (1)

Country Link
DE (1) DE9421671U1 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007216A1 (en) * 1998-07-29 2000-02-10 Applied Materials, Inc. A ceramic composition for an apparatus and method for processing a substrate
EP1156130A1 (en) * 1999-12-10 2001-11-21 Tocalo Co. Ltd. Plasma processing container internal member and production method therefor
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
WO2004003962A2 (en) * 2002-06-27 2004-01-08 Lam Research Corporation Thermal sprayed yttria-containing coating for plasma reactor
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US7678226B2 (en) 2002-09-30 2010-03-16 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7780786B2 (en) 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
US7811428B2 (en) 2002-09-30 2010-10-12 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7846291B2 (en) 1999-12-10 2010-12-07 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US8057600B2 (en) 2002-09-30 2011-11-15 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US8117986B2 (en) 2002-09-30 2012-02-21 Tokyo Electron Limited Apparatus for an improved deposition shield in a plasma processing system
US8118936B2 (en) 2002-09-30 2012-02-21 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6641697B2 (en) 1998-07-29 2003-11-04 Applied Materials, Inc Substrate processing using a member comprising an oxide of a group IIIB metal
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
WO2000007216A1 (en) * 1998-07-29 2000-02-10 Applied Materials, Inc. A ceramic composition for an apparatus and method for processing a substrate
US6352611B1 (en) 1998-07-29 2002-03-05 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US7364798B2 (en) 1999-12-10 2008-04-29 Tocalo Co., Ltd. Internal member for plasma-treating vessel and method of producing the same
EP1156130A1 (en) * 1999-12-10 2001-11-21 Tocalo Co. Ltd. Plasma processing container internal member and production method therefor
EP1156130A4 (en) * 1999-12-10 2005-07-20 Tocalo Co Ltd Plasma processing container internal member and production method therefor
US7879179B2 (en) 1999-12-10 2011-02-01 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US7846291B2 (en) 1999-12-10 2010-12-07 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US9012030B2 (en) 2002-01-08 2015-04-21 Applied Materials, Inc. Process chamber component having yttrium—aluminum coating
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US8114525B2 (en) 2002-01-08 2012-02-14 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US8110086B2 (en) 2002-01-08 2012-02-07 Applied Materials, Inc. Method of manufacturing a process chamber component having yttrium-aluminum coating
US7833401B2 (en) 2002-01-08 2010-11-16 Applied Materials, Inc. Electroplating an yttrium-containing coating on a chamber component
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
WO2004003962A3 (en) * 2002-06-27 2004-04-01 Lam Res Corp Thermal sprayed yttria-containing coating for plasma reactor
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US7300537B2 (en) 2002-06-27 2007-11-27 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
WO2004003962A2 (en) * 2002-06-27 2004-01-08 Lam Research Corporation Thermal sprayed yttria-containing coating for plasma reactor
US7811428B2 (en) 2002-09-30 2010-10-12 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7678226B2 (en) 2002-09-30 2010-03-16 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US8057600B2 (en) 2002-09-30 2011-11-15 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US8117986B2 (en) 2002-09-30 2012-02-21 Tokyo Electron Limited Apparatus for an improved deposition shield in a plasma processing system
US8118936B2 (en) 2002-09-30 2012-02-21 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7780786B2 (en) 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
US8449715B2 (en) 2002-11-28 2013-05-28 Tokyo Electron Limited Internal member of a plasma processing vessel
US8877002B2 (en) 2002-11-28 2014-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel

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