DE69942628D1 - Halbleiterspeichersystem und Zugriffverfahren für Halbleiterspeicher und Halbleiterspeicher - Google Patents

Halbleiterspeichersystem und Zugriffverfahren für Halbleiterspeicher und Halbleiterspeicher

Info

Publication number
DE69942628D1
DE69942628D1 DE69942628T DE69942628T DE69942628D1 DE 69942628 D1 DE69942628 D1 DE 69942628D1 DE 69942628 T DE69942628 T DE 69942628T DE 69942628 T DE69942628 T DE 69942628T DE 69942628 D1 DE69942628 D1 DE 69942628D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
access method
memory system
semiconductor
access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942628T
Other languages
English (en)
Inventor
Kenji Tsuchida
Haruki Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69942628D1 publication Critical patent/DE69942628D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
DE69942628T 1998-05-07 1999-05-07 Halbleiterspeichersystem und Zugriffverfahren für Halbleiterspeicher und Halbleiterspeicher Expired - Lifetime DE69942628D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12436798A JP4226686B2 (ja) 1998-05-07 1998-05-07 半導体メモリシステム及び半導体メモリのアクセス制御方法及び半導体メモリ

Publications (1)

Publication Number Publication Date
DE69942628D1 true DE69942628D1 (de) 2010-09-09

Family

ID=14883656

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69942628T Expired - Lifetime DE69942628D1 (de) 1998-05-07 1999-05-07 Halbleiterspeichersystem und Zugriffverfahren für Halbleiterspeicher und Halbleiterspeicher

Country Status (6)

Country Link
US (4) US5973991A (de)
EP (1) EP0955639B1 (de)
JP (1) JP4226686B2 (de)
KR (1) KR100326575B1 (de)
DE (1) DE69942628D1 (de)
TW (1) TW409394B (de)

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KR100323254B1 (ko) * 1998-04-24 2002-02-04 아끼구사 나오유끼 반도체 집적 회로
US6295231B1 (en) 1998-07-17 2001-09-25 Kabushiki Kaisha Toshiba High-speed cycle clock-synchronous memory device
JP4043151B2 (ja) * 1998-08-26 2008-02-06 富士通株式会社 高速ランダムアクセス可能なメモリデバイス
JP2000137983A (ja) 1998-08-26 2000-05-16 Toshiba Corp 半導体記憶装置
US6044032A (en) * 1998-12-03 2000-03-28 Micron Technology, Inc. Addressing scheme for a double data rate SDRAM
US6081477A (en) * 1998-12-03 2000-06-27 Micron Technology, Inc. Write scheme for a double data rate SDRAM
JP4034923B2 (ja) * 1999-05-07 2008-01-16 富士通株式会社 半導体記憶装置の動作制御方法および半導体記憶装置
JP3706772B2 (ja) * 1999-07-12 2005-10-19 富士通株式会社 半導体集積回路
US6191988B1 (en) * 1999-07-22 2001-02-20 International Business Machines Corporation Floating bitline timer allowing a shared equalizer DRAM sense amplifier
JP2001143464A (ja) * 1999-11-11 2001-05-25 Nec Ic Microcomput Syst Ltd 半導体記憶装置
DE19956829A1 (de) * 1999-11-25 2001-06-07 Siemens Ag Speichereinrichtung für Prozessorsysteme
JP4083944B2 (ja) 1999-12-13 2008-04-30 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
US6373778B1 (en) 2000-01-28 2002-04-16 Mosel Vitelic, Inc. Burst operations in memories
US6191997B1 (en) 2000-03-10 2001-02-20 Mosel Vitelic Inc. Memory burst operations in which address count bits are used as column address bits for one, but not both, of the odd and even columns selected in parallel.
JP4552258B2 (ja) * 2000-03-29 2010-09-29 エルピーダメモリ株式会社 半導体記憶装置
US7088604B2 (en) * 2001-03-15 2006-08-08 Micron Technology, Inc. Multi-bank memory
US6404689B1 (en) * 2001-03-30 2002-06-11 International Business Machines Corporation Method and structure for hiding a refresh operation in a DRAM having an interlocked pipeline
KR100401508B1 (ko) 2001-05-25 2003-10-17 주식회사 하이닉스반도체 램버스 디램의 뱅크 제어회로
US6445611B1 (en) * 2001-09-28 2002-09-03 International Business Machines Corporation Method and arrangement for preconditioning in a destructive read memory
US6791859B2 (en) * 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6501695B1 (en) * 2002-01-11 2002-12-31 Lsi Logic Corporation Technique for the reduction of memory access time variation
JP2003233989A (ja) * 2002-02-07 2003-08-22 Fujitsu Ltd 半導体記憶装置及びプリチャージ方法
KR100412142B1 (ko) * 2002-02-26 2003-12-31 주식회사 하이닉스반도체 패킷 전송 방식의 반도체 메모리 장치에서 스페셜 모드를구현하는 회로
US6917552B2 (en) * 2002-03-05 2005-07-12 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
US6590819B1 (en) * 2002-03-14 2003-07-08 Micron Technology, Inc. Digit line equilibration using time-multiplexed isolation
JP4544808B2 (ja) * 2002-04-09 2010-09-15 富士通セミコンダクター株式会社 半導体記憶装置の制御方法、および半導体記憶装置
JP2003331578A (ja) * 2002-05-14 2003-11-21 Toshiba Corp メモリシステム及びそのデータ書き込み方法
KR100486260B1 (ko) * 2002-09-11 2005-05-03 삼성전자주식회사 동기식 디램의 고주파수 동작을 위한 비트라인 센스앰프구동 제어회로 및 그 구동 제어방법
KR100506448B1 (ko) * 2002-12-27 2005-08-08 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 이용한 인터리브 제어 장치
KR100525460B1 (ko) * 2003-05-23 2005-10-31 (주)실리콘세븐 2개의 메모리 블락 사이에 3개의 센스앰프를 가지며,인출과 기입 동작 구간이 분리되는 리프레쉬 동작을수행하는 에스램 호환 메모리 및 그 구동방법
JP4278438B2 (ja) * 2003-05-27 2009-06-17 三洋電機株式会社 不揮発性半導体記憶装置及びその制御方法
US7215595B2 (en) * 2003-11-26 2007-05-08 Infineon Technologies Ag Memory device and method using a sense amplifier as a cache
WO2005076137A1 (en) 2004-02-05 2005-08-18 Research In Motion Limited Memory controller interface
KR100706232B1 (ko) * 2004-07-08 2007-04-11 삼성전자주식회사 결함 셀을 스크린할 수 있는 반도체 메모리 장치 및스크린 방법
JP2006059046A (ja) * 2004-08-19 2006-03-02 Nec Computertechno Ltd メモリの制御方式およびメモリ制御回路
US7203102B2 (en) * 2004-10-27 2007-04-10 Infineon Technologies, Ag Semiconductor memory having tri-state driver device
US7362651B2 (en) * 2006-05-12 2008-04-22 International Business Machines Corporation Using common mode differential data signals of DDR2 SDRAM for control signal transmission
JP4808070B2 (ja) * 2006-05-18 2011-11-02 富士通セミコンダクター株式会社 半導体メモリおよび半導体メモリの動作方法
KR100867636B1 (ko) * 2007-02-13 2008-11-10 엠텍비젼 주식회사 고속 동작이 가능한 스택 뱅크 메모리
KR101286237B1 (ko) 2007-07-10 2013-07-15 삼성전자주식회사 반도체 메모리 장치의 비트라인 센스앰프회로 및 그에 따른제어방법.
KR101455253B1 (ko) 2007-11-15 2014-10-28 삼성전자주식회사 메모리 컨트롤러
US8149643B2 (en) * 2008-10-23 2012-04-03 Cypress Semiconductor Corporation Memory device and method
KR101673233B1 (ko) 2010-05-11 2016-11-17 삼성전자주식회사 트랜잭션 분할 장치 및 방법
WO2013033016A1 (en) * 2011-08-30 2013-03-07 Rambus Inc Distributed sub-page selection
US10373665B2 (en) * 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
TWI734781B (zh) * 2016-05-20 2021-08-01 日商半導體能源研究所股份有限公司 半導體裝置、電子構件及電子裝置
US11170841B2 (en) * 2020-02-26 2021-11-09 Micron Technology, Inc. Apparatus with extended digit lines and methods for operating the same

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US4924375A (en) * 1987-10-23 1990-05-08 Chips And Technologies, Inc. Page interleaved memory access
JPH0212541A (ja) * 1988-04-29 1990-01-17 Internatl Business Mach Corp <Ibm> コンピユーテイング・システム及びその動作方法
IL96808A (en) * 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
US5594704A (en) * 1992-04-27 1997-01-14 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device
JPH07130175A (ja) * 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
US5438548A (en) * 1993-12-10 1995-08-01 Texas Instruments Incorporated Synchronous memory with reduced power access mode
JPH07326192A (ja) * 1994-05-31 1995-12-12 Toshiba Micro Comput Eng Corp 半導体記憶装置
JP2817679B2 (ja) * 1995-09-20 1998-10-30 日本電気株式会社 半導体メモリ
US5654932A (en) * 1995-10-04 1997-08-05 Cirrus Logic, Inc. Memory devices with selectable access type and methods using the same
JP4084428B2 (ja) * 1996-02-02 2008-04-30 富士通株式会社 半導体記憶装置
US5815463A (en) * 1997-06-12 1998-09-29 Etron Technology, Inc Flexible time write operation
KR100274591B1 (ko) * 1997-07-29 2001-01-15 윤종용 동기형 버스트 매스크 롬 및 그것의 데이터 독출 방법
US5875141A (en) * 1997-08-14 1999-02-23 Micron Technology, Inc. Circuit and method for a memory device with P-channel isolation gates
JPH11162174A (ja) * 1997-11-25 1999-06-18 Mitsubishi Electric Corp 同期型半導体記憶装置
US6275435B1 (en) * 1999-03-31 2001-08-14 Vanguard International Semiconductor Corp. Bi-directional sense amplifier stage for memory datapath

Also Published As

Publication number Publication date
KR19990088093A (ko) 1999-12-27
JPH11317072A (ja) 1999-11-16
JP4226686B2 (ja) 2009-02-18
US6256258B1 (en) 2001-07-03
US5973991A (en) 1999-10-26
TW409394B (en) 2000-10-21
EP0955639A3 (de) 2000-05-10
US20020027830A1 (en) 2002-03-07
KR100326575B1 (ko) 2002-03-12
EP0955639B1 (de) 2010-07-28
US6442088B1 (en) 2002-08-27
EP0955639A2 (de) 1999-11-10
US6335904B1 (en) 2002-01-01

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