DE69937255D1 - Schnell-aufheiz- und -kühlvorrichtung für halbleiterwafer - Google Patents

Schnell-aufheiz- und -kühlvorrichtung für halbleiterwafer

Info

Publication number
DE69937255D1
DE69937255D1 DE69937255T DE69937255T DE69937255D1 DE 69937255 D1 DE69937255 D1 DE 69937255D1 DE 69937255 T DE69937255 T DE 69937255T DE 69937255 T DE69937255 T DE 69937255T DE 69937255 D1 DE69937255 D1 DE 69937255D1
Authority
DE
Germany
Prior art keywords
quick
heating
semiconductor wafer
cooling device
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937255T
Other languages
English (en)
Other versions
DE69937255T2 (de
Inventor
Arnon Gat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag RTP Systems Inc
Original Assignee
Steag RTP Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag RTP Systems Inc filed Critical Steag RTP Systems Inc
Application granted granted Critical
Publication of DE69937255D1 publication Critical patent/DE69937255D1/de
Publication of DE69937255T2 publication Critical patent/DE69937255T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69937255T 1998-11-20 1999-11-12 Schnell-aufheiz- und -kühlvorrichtung für halbleiterwafer Expired - Lifetime DE69937255T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19728498A 1998-11-20 1998-11-20
US197284 1998-11-20
PCT/IB1999/001832 WO2000031777A1 (en) 1998-11-20 1999-11-12 Fast heating and cooling apparatus for semiconductor wafers

Publications (2)

Publication Number Publication Date
DE69937255D1 true DE69937255D1 (de) 2007-11-15
DE69937255T2 DE69937255T2 (de) 2008-07-03

Family

ID=22728764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937255T Expired - Lifetime DE69937255T2 (de) 1998-11-20 1999-11-12 Schnell-aufheiz- und -kühlvorrichtung für halbleiterwafer

Country Status (7)

Country Link
US (2) US6919271B2 (de)
EP (1) EP1142001B1 (de)
JP (1) JP4625183B2 (de)
KR (1) KR100634642B1 (de)
DE (1) DE69937255T2 (de)
TW (1) TW459270B (de)
WO (1) WO2000031777A1 (de)

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KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
CN107841727A (zh) * 2017-12-15 2018-03-27 北京创昱科技有限公司 一种冷却构件及真空镀膜设备
CN110828311B (zh) * 2018-08-08 2024-04-16 北京北方华创微电子装备有限公司 晶片处理方法、辅助控制器和晶片处理系统
CN110854010B (zh) * 2018-08-20 2022-07-22 北京北方华创微电子装备有限公司 冷却晶圆的方法、装置和半导体处理设备
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CN111834247B (zh) * 2019-04-23 2023-09-08 北京北方华创微电子装备有限公司 冷却装置和半导体处理设备
KR102623544B1 (ko) * 2019-06-10 2024-01-10 삼성전자주식회사 광 조사 기반 웨이퍼 세정 장치 및 그 세정 장치를 포함한 웨이퍼 세정 시스템
CN111621758B (zh) * 2020-05-28 2022-03-29 中国电子科技集团公司第四十八研究所 一种晶圆冷却装置
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US6919271B2 (en) 2005-07-19
WO2000031777A1 (en) 2000-06-02
US7226488B2 (en) 2007-06-05
EP1142001A1 (de) 2001-10-10
US20040035847A1 (en) 2004-02-26
JP2002530883A (ja) 2002-09-17
KR20010075716A (ko) 2001-08-09
US20050183854A1 (en) 2005-08-25
KR100634642B1 (ko) 2006-10-16
DE69937255T2 (de) 2008-07-03
JP4625183B2 (ja) 2011-02-02
TW459270B (en) 2001-10-11
EP1142001B1 (de) 2007-10-03

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