DE69937217D1 - Vorrichtung mit einer Induktivität - Google Patents

Vorrichtung mit einer Induktivität

Info

Publication number
DE69937217D1
DE69937217D1 DE69937217T DE69937217T DE69937217D1 DE 69937217 D1 DE69937217 D1 DE 69937217D1 DE 69937217 T DE69937217 T DE 69937217T DE 69937217 T DE69937217 T DE 69937217T DE 69937217 D1 DE69937217 D1 DE 69937217D1
Authority
DE
Germany
Prior art keywords
inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937217T
Other languages
English (en)
Other versions
DE69937217T2 (de
Inventor
Bradley Paul Barber
Nathan Belk
David John Bishop
Peter Ledel Gammel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE69937217D1 publication Critical patent/DE69937217D1/de
Application granted granted Critical
Publication of DE69937217T2 publication Critical patent/DE69937217T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00007—Assembling automatically hinged components, i.e. self-assembly processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
DE69937217T 1998-09-12 1999-08-31 Vorrichtung mit einer Induktivität Expired - Lifetime DE69937217T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US152189 1980-05-22
US09/152,189 US6101371A (en) 1998-09-12 1998-09-12 Article comprising an inductor

Publications (2)

Publication Number Publication Date
DE69937217D1 true DE69937217D1 (de) 2007-11-15
DE69937217T2 DE69937217T2 (de) 2008-07-03

Family

ID=22541875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937217T Expired - Lifetime DE69937217T2 (de) 1998-09-12 1999-08-31 Vorrichtung mit einer Induktivität

Country Status (4)

Country Link
US (1) US6101371A (de)
EP (1) EP0986106B1 (de)
JP (2) JP2000150251A (de)
DE (1) DE69937217T2 (de)

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US6303423B1 (en) 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US8421158B2 (en) 1998-12-21 2013-04-16 Megica Corporation Chip structure with a passive device and method for forming the same
JP2000278042A (ja) * 1999-03-26 2000-10-06 Sony Corp 発振回路及びチューナ
US6850353B1 (en) 1999-06-11 2005-02-01 University Of Hawaii MEMS optical components
WO2000077556A1 (en) * 1999-06-11 2000-12-21 University Of Hawaii Mems optical components
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US7151298B1 (en) * 1999-12-20 2006-12-19 Advanced Micro Devices, Inc. Electrostatic discharge protection network having distributed components
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US6392524B1 (en) * 2000-06-09 2002-05-21 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6483419B1 (en) 2000-09-12 2002-11-19 3M Innovative Properties Company Combination horizontal and vertical thermal actuator
US6708491B1 (en) 2000-09-12 2004-03-23 3M Innovative Properties Company Direct acting vertical thermal actuator
US6531947B1 (en) 2000-09-12 2003-03-11 3M Innovative Properties Company Direct acting vertical thermal actuator with controlled bending
US6683508B1 (en) 2000-09-22 2004-01-27 Agere Systems, Inc. System and method of increasing a self-resonant frequency of a tuning circuit and an oscillator employing the same
US6706202B1 (en) * 2000-09-28 2004-03-16 Xerox Corporation Method for shaped optical MEMS components with stressed thin films
AU2002225777A1 (en) * 2000-11-28 2002-06-11 Fraunhofer Usa, Inc. Method of manufacturing ultra-precise, self-assembled micro systems
EP1346381B1 (de) * 2000-12-11 2009-04-01 Koninklijke Philips Electronics N.V. Bandspule
WO2002056763A2 (en) * 2001-01-22 2002-07-25 Integrated Sensing Systems, Inc. Mems capacitive sensor for physiologic parameter measurement
US6655964B2 (en) 2001-02-09 2003-12-02 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
US6595787B2 (en) * 2001-02-09 2003-07-22 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
US6438954B1 (en) 2001-04-27 2002-08-27 3M Innovative Properties Company Multi-directional thermal actuator
EP1389340A4 (de) * 2001-05-23 2009-08-05 Univ Illinois Erhöhte onchip-induktivität und verfahren zu ihrer herstellung
US6543087B2 (en) 2001-06-01 2003-04-08 Aip Networks, Inc. Micro-electromechanical hinged flap structure
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
DE10159415B4 (de) * 2001-12-04 2012-10-04 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur Herstellung einer Mikrospule und Mikrospule
US6781239B1 (en) * 2001-12-05 2004-08-24 National Semiconductor Corporation Integrated circuit and method of forming the integrated circuit having a die with high Q inductors and capacitors attached to a die with a circuit as a flip chip
US7011530B2 (en) * 2002-05-24 2006-03-14 Sitaraman Suresh K Multi-axis compliance spring
EP1540839A4 (de) * 2002-08-20 2008-01-02 Lockheed Corp Verfahren und vorrichtung zum modifizieren eines funkfrequenzgangs
US6856499B2 (en) 2003-03-28 2005-02-15 Northrop Gurmman Corporation MEMS variable inductor and capacitor
US6862441B2 (en) * 2003-06-09 2005-03-01 Nokia Corporation Transmitter filter arrangement for multiband mobile phone
JP2005057270A (ja) * 2003-08-01 2005-03-03 Stmicroelectronics Sa 切換え可能なインダクタンス
WO2009065127A1 (en) 2007-11-16 2009-05-22 Cochlear Americas Electrode array and method of forming an electrode array
WO2005055363A1 (en) * 2003-12-08 2005-06-16 Cochlear Limited Cochlear implant assembly
US7262680B2 (en) * 2004-02-27 2007-08-28 Illinois Institute Of Technology Compact inductor with stacked via magnetic cores for integrated circuits
US8384189B2 (en) 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
JP2008535432A (ja) * 2005-04-08 2008-08-28 エヌエックスピー ビー ヴィ 低電圧ｍｅｍｓオシレータ
DE102005030384B3 (de) * 2005-06-29 2006-11-02 Siemens Ag Antennevorrichtung für Funk basierte Telefone
CN1901161B (zh) 2005-07-22 2010-10-27 米辑电子股份有限公司 连续电镀制作线路组件的方法及线路组件结构
US7410894B2 (en) * 2005-07-27 2008-08-12 International Business Machines Corporation Post last wiring level inductor using patterned plate process
KR100620812B1 (ko) * 2005-08-08 2006-09-07 삼성전자주식회사 웨이퍼 레벨 재배선으로 형성된 터미네이션 회로선을 갖는반도체 소자
JP4893112B2 (ja) * 2006-06-03 2012-03-07 株式会社ニコン 高周波回路コンポーネント
US20080001700A1 (en) * 2006-06-30 2008-01-03 Flavio Pardo High inductance, out-of-plane inductors
US20080027311A1 (en) * 2006-07-14 2008-01-31 General Electric Company Resonant transponder using self-resonance of coil
US7839242B1 (en) 2006-08-23 2010-11-23 National Semiconductor Corporation Magnetic MEMS switching regulator
US20080102906A1 (en) * 2006-10-30 2008-05-01 Phonak Ag Communication system and method of operating the same
US8749021B2 (en) 2006-12-26 2014-06-10 Megit Acquisition Corp. Voltage regulator integrated with semiconductor chip
US7710232B1 (en) * 2007-05-09 2010-05-04 Sandia Corporation Microelectromechanical tunable inductor
WO2009009827A1 (en) * 2007-07-17 2009-01-22 Cochlear Limited Method and apparatus for forming an electrically insulating structure having holes for feedthroughs
US7936240B2 (en) * 2007-08-16 2011-05-03 Simon Fraser University Lithographically controlled curvature for MEMS devices and antennas
FR2937422B1 (fr) * 2008-10-22 2010-12-10 Total Raffinage Marketing Dispositif pour le controle de la qualite d'un lubrifiant et procede pour le controle du fonctionnement d'un equipement industriel utilisant un lubrifiant
JPWO2010052839A1 (ja) * 2008-11-06 2012-03-29 パナソニック株式会社 半導体装置
WO2010075447A1 (en) 2008-12-26 2010-07-01 Megica Corporation Chip packages with power management integrated circuits and related techniques
JP2011130083A (ja) * 2009-12-16 2011-06-30 Mitsubishi Electric Corp 可変フィルタ
US8373543B2 (en) * 2009-12-22 2013-02-12 Bae Systems Information And Electronic Systems Integrations Inc. RFID transponder using ambient radiation
CN102870175B (zh) 2010-02-19 2014-06-04 王明亮 硅基功率电感
JP2013074496A (ja) * 2011-09-28 2013-04-22 Onkyo Corp 分波回路
US8909188B2 (en) * 2012-10-31 2014-12-09 Cambridge Silicon Radio, Ltd. Mixer
JP6278925B2 (ja) * 2015-04-24 2018-02-14 三菱電機株式会社 マルチポートスイッチ

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JPS5612819Y2 (de) * 1976-02-26 1981-03-25
US4733190A (en) * 1987-03-16 1988-03-22 Medical Advances, Inc. NMR local coil with adjustable spacing
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WO1994017558A1 (en) * 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
DE4418432A1 (de) * 1994-05-26 1995-11-30 Siemens Ag Frequenzveränderbare Oszillatoranordnung
DE4437260C1 (de) * 1994-10-18 1995-10-19 Siemens Ag Mikromechanisches Relais
JPH08222694A (ja) * 1995-02-13 1996-08-30 Toshiba Corp 半導体装置および半導体装置の製造方法
SE9500849D0 (sv) * 1995-03-10 1995-03-10 Pharmacia Ab Methods for the manufacturing of micromachined structures and micromachined structures manufactured using such methods
JP3378435B2 (ja) * 1995-09-29 2003-02-17 株式会社東芝 超高周波帯無線通信装置
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Also Published As

Publication number Publication date
JP2000150251A (ja) 2000-05-30
EP0986106A1 (de) 2000-03-15
JP2007201488A (ja) 2007-08-09
DE69937217T2 (de) 2008-07-03
US6101371A (en) 2000-08-08
EP0986106B1 (de) 2007-10-03
JP4880501B2 (ja) 2012-02-22

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