DE69936654D1 - Speicheranordnung - Google Patents

Speicheranordnung

Info

Publication number
DE69936654D1
DE69936654D1 DE69936654T DE69936654T DE69936654D1 DE 69936654 D1 DE69936654 D1 DE 69936654D1 DE 69936654 T DE69936654 T DE 69936654T DE 69936654 T DE69936654 T DE 69936654T DE 69936654 D1 DE69936654 D1 DE 69936654D1
Authority
DE
Germany
Prior art keywords
memory array
array
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69936654T
Other languages
English (en)
Other versions
DE69936654T2 (de
Inventor
Kazuo Nakazato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Publication of DE69936654D1 publication Critical patent/DE69936654D1/de
Application granted granted Critical
Publication of DE69936654T2 publication Critical patent/DE69936654T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
DE69936654T 1999-12-09 1999-12-09 Speicheranordnung Expired - Lifetime DE69936654T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99309891A EP1107317B1 (de) 1999-12-09 1999-12-09 Speicheranordnung

Publications (2)

Publication Number Publication Date
DE69936654D1 true DE69936654D1 (de) 2007-09-06
DE69936654T2 DE69936654T2 (de) 2007-11-22

Family

ID=8241791

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69936654T Expired - Lifetime DE69936654T2 (de) 1999-12-09 1999-12-09 Speicheranordnung

Country Status (4)

Country Link
US (1) US6574143B2 (de)
EP (1) EP1107317B1 (de)
JP (1) JP2001223281A (de)
DE (1) DE69936654T2 (de)

Families Citing this family (70)

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JP4923318B2 (ja) * 1999-12-17 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
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US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6754104B2 (en) 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6479862B1 (en) 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
DE10036911C2 (de) * 2000-07-28 2002-06-06 Infineon Technologies Ag Verfahren zur Herstellung einer Multi-Bit-Speicherzelle
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US7068544B2 (en) * 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
US7132711B2 (en) * 2001-08-30 2006-11-07 Micron Technology, Inc. Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US7012297B2 (en) * 2001-08-30 2006-03-14 Micron Technology, Inc. Scalable flash/NV structures and devices with extended endurance
US6754108B2 (en) 2001-08-30 2004-06-22 Micron Technology, Inc. DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7042043B2 (en) * 2001-08-30 2006-05-09 Micron Technology, Inc. Programmable array logic or memory devices with asymmetrical tunnel barriers
US7075829B2 (en) * 2001-08-30 2006-07-11 Micron Technology, Inc. Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
US7087954B2 (en) * 2001-08-30 2006-08-08 Micron Technology, Inc. In service programmable logic arrays with low tunnel barrier interpoly insulators
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
US6963103B2 (en) * 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7476925B2 (en) * 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6933548B1 (en) 2001-12-21 2005-08-23 Synopsys, Inc. Negative differential resistance load element
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6784480B2 (en) * 2002-02-12 2004-08-31 Micron Technology, Inc. Asymmetric band-gap engineered nonvolatile memory device
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US6795337B2 (en) * 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6847562B2 (en) 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6912151B2 (en) 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6864104B2 (en) 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US6914289B2 (en) * 2002-08-15 2005-07-05 Intel Corporation Hourglass ram
US7042027B2 (en) 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6849483B2 (en) 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US6897518B1 (en) * 2003-07-10 2005-05-24 Advanced Micro Devices, Inc. Flash memory cell having reduced leakage current
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US20060081908A1 (en) * 2004-10-14 2006-04-20 Smayling Michael C Flash gate stack notch to improve coupling ratio
JP2006229045A (ja) * 2005-02-18 2006-08-31 Toshiba Corp 半導体装置及びその製造方法
US8330202B2 (en) * 2005-02-23 2012-12-11 Micron Technology, Inc. Germanium-silicon-carbide floating gates in memories
JP2006237423A (ja) * 2005-02-28 2006-09-07 Oki Electric Ind Co Ltd 半導体記憶装置および半導体記憶装置の製造方法
KR100771808B1 (ko) * 2006-07-05 2007-10-30 주식회사 하이닉스반도체 Ｓｏｎｏｓ 구조를 갖는 플래시 메모리 소자 및 그것의제조 방법
US7849090B2 (en) * 2005-03-30 2010-12-07 Primal Fusion Inc. System, method and computer program for faceted classification synthesis
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7436018B2 (en) * 2005-08-11 2008-10-14 Micron Technology, Inc. Discrete trap non-volatile multi-functional memory device
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
KR101145802B1 (ko) 2006-09-29 2012-05-16 에스케이하이닉스 주식회사 낸드 플래시 메모리 소자의 메모리 셀 및 그 제조방법
US20090303794A1 (en) * 2008-06-04 2009-12-10 Macronix International Co., Ltd. Structure and Method of A Field-Enhanced Charge Trapping-DRAM
TWI407550B (zh) * 2009-12-21 2013-09-01 Nat Univ Tsing Hua 非揮發性記憶體元件、可程式記憶體元件、電容器與金屬氧化半導體
TWI440142B (zh) * 2011-04-08 2014-06-01 Nat Univ Tsing Hua 非揮發性記憶體元件及其操作方法
US9484423B2 (en) 2013-11-01 2016-11-01 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet III-V channel FETs
US9570609B2 (en) 2013-11-01 2017-02-14 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US9647098B2 (en) * 2014-07-21 2017-05-09 Samsung Electronics Co., Ltd. Thermionically-overdriven tunnel FETs and methods of fabricating the same
US9275744B1 (en) * 2015-01-29 2016-03-01 International Business Machines Corporation Method of restoring a flash memory in an integrated circuit chip package by addition of heat and an electric field
FR3054723A1 (fr) 2016-07-27 2018-02-02 Stmicroelectronics (Rousset) Sas Cellule-memoire eeprom compacte avec zone d'injection tunnel reduite
TWI741204B (zh) * 2017-09-15 2021-10-01 美商綠芯智慧財產有限責任公司 電可抹除可程式化記憶體單元、電可程式化及可抹除非揮發性記憶體單元及操作記憶體單元之方法
TWI742299B (zh) 2017-09-15 2021-10-11 美商綠芯智慧財產有限責任公司 電可抹除可程式化非揮發性記憶體單元及操作記憶體單元之方法
CN110323223A (zh) * 2019-05-16 2019-10-11 国家纳米科学中心 顶浮栅范德华异质结器件及其制备方法、光电存储器件

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JP3709214B2 (ja) * 1994-09-21 2005-10-26 株式会社ルネサステクノロジ 半導体記憶装置
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KR100209724B1 (ko) * 1996-08-21 1999-07-15 구본준 플래쉬 메모리 및 이의 제조방법
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EP1306904A3 (de) * 1997-09-05 2005-05-11 Hitachi Europe Limited Bauelement mit gesteuerter Leitung
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Also Published As

Publication number Publication date
US6574143B2 (en) 2003-06-03
JP2001223281A (ja) 2001-08-17
US20010013621A1 (en) 2001-08-16
EP1107317B1 (de) 2007-07-25
DE69936654T2 (de) 2007-11-22
EP1107317A1 (de) 2001-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HITACHI, LTD., TOKYO, JP